Heat preservation device and semiconductor heat treatment equipment

Abstract

The invention provides a heat preservation device and semiconductor heat treatment equipment. The heat preservation device is arranged on a process door of the semiconductor heat treatment equipment and is used for preserving heat in the reaction cavity; the heat preservation device comprises a heat preservation assembly and a heating assembly, and the heat preservation assembly is provided with a containing space; the heating assembly is arranged in the accommodating space and is used for radiating heat to the heat preservation assembly, so that the temperature of the bottom area of the reaction cavity can be increased, and the furnace body of the semiconductor process chamber can be matched to realize uniform temperature field distribution in the vertical direction of the reaction cavity, so that the process effect can be improved; and all bearing positions on the wafer boat can be utilized, so that the productivity is improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor process equipment, specifically relating to a heat preservation device and semiconductor heat treatment equipment. Background Technology

[0002] With the rapid development of the integrated circuit manufacturing industry, device feature sizes are constantly shrinking, chip integration is increasing, and the requirements for process specifications are becoming more stringent. In the integrated circuit manufacturing process, vertical diffusion furnaces primarily handle processes such as thermal oxidation film deposition, annealing, and alloying. Among these, film deposition is its most crucial function. To achieve excellent film thickness uniformity, good uniformity of the temperature and airflow fields during wafer film deposition is essential. Existing vertical diffusion furnaces typically include a reaction chamber, a process gate, and a furnace body for heating the reaction chamber. The process gate is connected to the transfer port of the reaction chamber, and the wafer carrier performs the aforementioned processes within the reaction chamber. Furthermore, since the inlet and outlet devices and the transfer port for transporting the wafer carrier are usually located in the lower part of the reaction chamber, the lower part of the reaction chamber is typically located outside the furnace body. To prevent heat loss from the reaction chamber, existing heat preservation devices for the reaction chamber typically include: heat insulation cotton wrapped around the lower part of the reaction chamber and a heat insulation container located in the bottom area of ​​the reaction chamber. However, existing insulation devices cannot prevent heat loss from the lower end of the reaction chamber, which can easily lead to uneven temperature distribution in the vertical direction inside the reaction chamber, thus affecting process uniformity. Moreover, due to the low temperature at the bottom of the crystal boat, the wafers carried at the bottom of the crystal boat cannot be processed normally. It is necessary to use a secondary wafer instead of the main wafer at the bottom of the crystal boat, that is, in the area near the process gate. This will result in inefficient use of space in the crystal boat, leading to lower production capacity. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a heat preservation device and a semiconductor heat treatment equipment, which can solve the problem of uneven temperature field distribution in the vertical direction inside the reaction chamber of the existing vertical furnace and the ineffective utilization of the space of the crystal boat, resulting in low production capacity.

[0004] This invention provides a heat preservation device for a semiconductor heat treatment equipment, the semiconductor heat treatment equipment including a reaction chamber and a process door; the heat preservation device is disposed on the process door and is used to preserve the heat in the reaction chamber, the heat preservation device including a heat preservation component and a heating component, wherein the heat preservation component has a receiving space; the heating component is disposed in the receiving space and is used to radiate heat to the heat preservation component.

[0005] Optionally, the insulation component includes a plurality of insulation sheets spaced apart in a vertical direction, each insulation sheet having a first through hole, and the first through holes arranged axially together forming the accommodating space.

[0006] Optionally, the insulation component further includes a plurality of support columns, at least two of which are provided with a support portion for supporting the insulation sheet; each insulation sheet is provided with a plurality of second through holes; each second through hole is provided in a one-to-one correspondence with each support column, and the second through holes are configured to allow the insulation sheet and the support column to move relative to each other along the support column when in a first relative position, and the support portion and the insulation sheet are axially limited and engaged when in a second relative position.

[0007] Optionally, the bearing portion includes a limiting groove disposed on the outer peripheral surface of the support column;

[0008] The insulation sheet has a limiting tooth in the second through hole. When the insulation sheet and the support column are in the first relative position, the limiting tooth and the limiting groove are offset from each other in the circumferential direction of the insulation sheet so that the insulation sheet can move relative to the support column. When the insulation sheet and the support column are in the second relative position, at least a portion of the limiting tooth is located in the limiting groove and is axially limited and engaged with the limiting groove.

[0009] Optionally, the insulation component further includes a supporting top plate; the supporting top plate is detachably connected to the top ends of the plurality of supporting columns;

[0010] The supporting top plate has a third through hole, which is positioned corresponding to the first through hole.

[0011] Optionally, the insulation component further includes a supporting base plate for connecting to the process door;

[0012] The supporting base plate is fixedly connected to the bottom ends of the plurality of supporting columns; the heating assembly is connected to the supporting base plate.

[0013] Optionally, the heating assembly includes a heating column body and an electric heating component; the bottom end of the heating column body is connected to the supporting base plate; the orthographic projection of the heating column body on the supporting top plate is located within the third through hole;

[0014] The electrothermal component is disposed inside the heating column body and is used to generate heat using the electrothermal effect;

[0015] The supporting base plate is provided with an auxiliary electrode that is connected to an external power source, so that the heating component can be connected to the external power source through the auxiliary electrode.

[0016] Optionally, the heating capacity of the heating component gradually decreases in the direction of approaching the process gate.

[0017] Optional, the insulation device may also include:

[0018] A temperature sensing component is used to detect the actual temperature of the heating component.

[0019] A control component is communicatively connected to both the heating component and the temperature measuring component, and is used to adjust the output power of the heating component according to the actual temperature of the heating component, so as to keep the actual temperature of the heating component at a preset temperature.

[0020] As another technical solution, the present invention also provides a semiconductor heat treatment apparatus, which includes a reaction chamber, a furnace body, a process door, and a heat preservation device as described above.

[0021] The furnace body is arranged around the outer periphery and top of the reaction chamber for heating the reaction chamber;

[0022] The process gate is located at the bottom port of the reaction chamber and is used to control the opening and closing of the bottom port of the reaction chamber.

[0023] The heat preservation device is installed on the process door.

[0024] The present invention has the following beneficial effects:

[0025] The heat preservation device provided in this embodiment of the invention includes a heating component and a heat preservation component disposed on the process gate. The heating component heats the heat preservation component by radiating heat to it, effectively adding a heat source to the bottom of the reaction chamber. This prevents heat loss from the lower part of the reaction chamber, thereby improving the heat preservation effect of the device. Simultaneously, it increases the temperature of the bottom region of the wafer boat, working in conjunction with the furnace body located outside the reaction chamber to ensure a uniform temperature distribution in the vertical direction. This improves the temperature uniformity of various regions of the wafer boat in the vertical direction, thus enhancing process uniformity. Furthermore, when a wafer boat carrying multiple wafers is placed in the reaction chamber, the bottom region of the wafer boat can normally support and process the wafers without using substitute wafers. This ensures that all support positions of the wafer boat are utilized, thereby increasing production capacity. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of semiconductor heat treatment equipment in related technologies;

[0027] Figure 2 This is a schematic diagram of the structure of the heat preservation device connected to the crystal boat according to an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the structure of a semiconductor heat treatment device provided in an embodiment of the present invention;

[0029] Figure 4 This is a schematic diagram of the structure of the heat preservation device provided in an embodiment of the present invention;

[0030] Figure 5 This is a schematic diagram showing the location of the constant temperature zone of the crystal boat in related technologies and this application;

[0031] Figure 6 A perspective view of the heat preservation device provided in the embodiments of the present invention;

[0032] Figure 7 A schematic diagram of the heating assembly, support column, and support base plate provided in this embodiment of the invention;

[0033] Figure 8 A perspective view of the heating assembly, support column, and support base plate provided in this embodiment of the invention;

[0034] Figure 9 A top view of the heat insulation sheet provided in an embodiment of the present invention;

[0035] Figure 10 A perspective view of the heat insulation sheet provided in the embodiment of the present invention;

[0036] Figure 11 A schematic diagram of the supporting top plate provided in an embodiment of the present invention;

[0037] Figure 12 A cross-sectional view of the supporting top plate provided in an embodiment of the present invention;

[0038] Figure 13 A perspective view of the supporting top plate provided in an embodiment of the present invention;

[0039] Figure 14 This is a schematic diagram of the structure of a heat preservation device in related technologies;

[0040] Figure 15 This is a top view of a thermal insulation device in related technologies;

[0041] Figure 16 This is a top view of the heat preservation device provided in an embodiment of the present invention. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0043] It is understood that the specific embodiments and accompanying drawings described herein are merely for explaining the invention and are not intended to limit the invention.

[0044] It is understood that, without conflict, the various embodiments of the present invention and the features thereof can be combined with each other.

[0045] It is understood that, for ease of description, the accompanying drawings of this invention only show the parts related to the embodiments of this invention, while the parts unrelated to the embodiments of this invention are not shown in the drawings.

[0046] It is understood that, without conflict, the functions and steps marked in the flowcharts and block diagrams of the embodiments of the present invention may occur in a different order than that marked in the accompanying drawings.

[0047] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

[0048] like Figure 1 As shown, in related technologies, semiconductor thermal processing equipment typically includes a reaction chamber 01 for performing thermal processing and a furnace body 02 for heating the reaction chamber 01. However, the bottom region of the reaction chamber 01 in these technologies is located outside the furnace body 02. This means that even with a heat preservation device 03 installed in the bottom region of the reaction chamber 01, heat loss from the bottom region is difficult to prevent, leading to uneven temperature distribution within the reaction chamber 01 in the vertical direction and affecting process uniformity. Furthermore, because the temperature at the bottom of the crystal boat 04 is low, the wafers carried at the bottom of the crystal boat 04 cannot be processed normally. Instead, a secondary wafer needs to be used in the area at the bottom of the crystal boat 04, near the process gate 05. This results in inefficient use of space in the crystal boat 04, leading to lower throughput.

[0049] To address this problem, this embodiment provides a heat preservation device for semiconductor heat treatment equipment. For example... Figures 2 to 4 As shown, the heat preservation device in this embodiment is installed on the process gate 4 of the semiconductor heat treatment equipment to preserve the heat within the reaction chamber 7 of the semiconductor heat treatment equipment. The heat preservation device includes a heating component 1 and a heat preservation component 2. The heat preservation component 2 has a receiving space; the heating component 1 is disposed within the receiving space and is used to radiate heat to the heat preservation component 2 to heat it. This is equivalent to adding a heat source at the bottom of the reaction chamber 7 to prevent heat loss from the lower end of the reaction chamber 7, thereby improving the heat preservation effect of the heat preservation device. Based on this, as... Figure 2 and Figure 3As shown, when the crystal boat 3 carrying multiple wafers is placed in the reaction chamber 7, the heat preservation device provided in this embodiment can also increase the temperature of the bottom area of ​​the crystal boat 3, so as to cooperate with the furnace body 5 set outside the reaction chamber 7, so that the temperature field distribution of the reaction chamber 7 in the vertical direction is uniform, thereby improving the temperature uniformity of each area of ​​the crystal boat 3 in the vertical direction, and thus improving the process uniformity; therefore, the bottom area of ​​the crystal boat 3 can normally carry the wafers and process them without using the wafers as substitutes, thereby ensuring that all the carrying positions of the crystal boat 3 can be utilized, thereby increasing the production capacity.

[0050] Please refer to Figure 5 The left figure (a) shows the insulation tank and crystal boat in the related technology, and the right figure (b) shows the insulation device and crystal boat in this application. By comparing the left figure (a) and the right figure (b), it is obvious that the isothermal zone Lb of the crystal boat in this application is longer than the isothermal zone La of the crystal boat in the related technology. Since the isothermal zone of the crystal boat is the area where the process temperature is uniform at all locations, the wafers in the isothermal zone can be heated to the desired process temperature. Therefore, compared with the crystal boat in the related technology, the number of wafers uniformly heated in the crystal boat of this application is greater. Consequently, compared with the insulation device in the related technology, the insulation device proposed in this application can effectively improve the utilization rate of the crystal boat bearing position, thereby increasing the production capacity.

[0051] In some embodiments, such as Figure 4 As shown, the insulation component 2 includes multiple insulation sheets 21 spaced apart vertically. Each insulation sheet 21 can absorb heat using its own heat capacity; moreover, the surface of the insulation sheet 21 can reflect the heat radiated by the heating component 1, causing heat to be continuously reflected between adjacent insulation sheets 21, thereby promoting the heating of multiple insulation sheets 21 and improving the heating efficiency of the bottom region of the reaction chamber 7. Furthermore, the multiple spaced insulation sheets 21 can interfere with the vertical airflow for heat convection, reducing heat exchange between the reaction chamber 7 and the process door 4 via heat convection, thus reducing heat loss from the reaction chamber 7 and preventing the process door 4 from overheating.

[0052] For example, such as Figure 2 and Figure 4 As shown, each insulation sheet 21 can be set horizontally. A horizontal setting of the insulation sheet 21 facilitates installation, but this application does not limit this; other settings for the insulation sheet 21, such as a suitable tilt, are also possible, as long as the insulation sheets are set parallel to each other.

[0053] like Figure 9 and Figure 10As shown, each insulation sheet 21 is provided with a first through hole 211, and the first through holes 211 of multiple insulation sheets 21 are all arranged correspondingly along the axial direction of the first through holes 211. The space located inside the first through holes 211 of multiple insulation sheets 21 together constitutes the aforementioned receiving space. Figure 4 As shown, the heating component 1 is disposed in the accommodating space, that is, multiple heat insulation sheets 21 are arranged around the heating component 1, that is, the heating component 1 is disposed through the first through hole 211 of the multiple heat insulation sheets 21. In this way, the heat radiated by the heating component 1 to the periphery can heat all the heat insulation sheets 21, and heat the bottom area of ​​the reaction chamber 7 through the heat insulation sheets 21, thereby improving the heat preservation effect of the heat preservation device, and at the same time, it can also increase the temperature of the bottom area of ​​the crystal boat, so as to cooperate with the furnace body 5 disposed outside the reaction chamber 7, so that the temperature field distribution of the reaction chamber 7 in the vertical direction is uniform.

[0054] Furthermore, the heat radiated by the heating component 1 can radiate outwards from the gaps between adjacent insulation sheets 21, thereby heating components near the periphery of the insulation sheets 21. Specifically, such as Figure 3 As shown, in the semiconductor heat treatment equipment, an air intake device 9 and an exhaust device 8 are also provided around the area where the heat preservation device is located. In this case, the heat radiated by the heating component 1 can be radiated to the air intake device 9 and the exhaust device 8 through the gap between adjacent heat preservation plates 21 to heat the two, thereby preheating the process gas in the air intake device 9 and preventing the exhaust gas in the exhaust device 8 from condensing.

[0055] like Figure 2 and Figure 4 As shown, in some specific embodiments, the accommodating space is located in the central region of the insulation component 2. This allows the heating component 1 to radiate heat to the surrounding insulation sheets 21 over the same distance, thereby ensuring that each insulation sheet 21 is heated evenly in all circumferential directions, and thus improving the temperature uniformity of each insulation sheet 21 in the circumferential direction.

[0056] For example, such as Figure 4As shown, multiple insulation sheets 21 are coaxially arranged. Furthermore, each first through hole 211 is coaxially arranged with its corresponding insulation sheet 21, and the multiple first through holes 211 can have the same shape to collectively form a tubular receiving space extending along the axis of the insulation component 2. The inner diameter of this tubular receiving space is consistent along the axis of the insulation component 2. This facilitates the installation of the heating component 1 within the receiving space and reduces the likelihood of collisions between the heating component 1 and the insulation sheets 21, thus reducing the installation difficulty of the heating component 1. Moreover, the consistent inner diameter of the tubular receiving space reduces potential interference to the process gas flow within the space, thereby promoting heat exchange between the heating component 1 and each insulation sheet 21 via the process gas, and improving the heating efficiency of the heating component 1 in heating the bottom region of the reaction chamber 7.

[0057] For example, such as Figure 9 and Figure 10 As shown, the insulation sheet 21 can be a circular sheet, so that the insulation device can form a cylindrical heat source, which corresponds to the shape of the cylindrical reaction chamber 7, avoiding significant interference with the internal temperature field of the reaction chamber 7, and making it easier to install the insulation device inside the reaction chamber 7. Moreover, the first through hole 211 can be a circular hole, which is easy to process, thereby reducing the manufacturing difficulty of the insulation sheet 21 and saving manufacturing costs.

[0058] In some specific embodiments, the insulation sheet 21 is made of quartz or silicon carbide. Both quartz and silicon carbide have good heat insulation capabilities, and quartz and silicon carbide processed into sheets also have good reflectivity for infrared light, thereby effectively reflecting the heat radiated outward by the heating component 1 back to the crystal boat 3. Moreover, the wafers to be processed in semiconductor heat treatment equipment are usually made of silicon, silicon carbide, etc. Therefore, the insulation sheet 21 made of quartz or silicon carbide will not introduce impurities into the semiconductor heat treatment equipment that are not desired by the process.

[0059] In some embodiments, the insulation component 2 further includes a plurality of support columns 22, at least two of which are provided with support portions for supporting the insulation sheet 21. Each insulation sheet 21 is provided with a plurality of second through holes 212. Each second through hole 212 is correspondingly provided with each support column 22, that is, each support column 22 is correspondingly inserted into each second through hole 212. Furthermore, the second through holes 212 are configured to allow the insulation sheet 21 and the support column 22 to move relative to each other along the support column 22 when they are in a first relative position, and when they are in a second relative position, the support portions and the insulation sheet 21 are axially limited and engaged. The first relative position and the second relative position mentioned above refer to the relative positions of the insulation sheet 21 and the support column 22 in the circumferential direction of the insulation sheet 21. That is, the insulation sheet 21 can rotate around its own axis at a certain angle relative to the support column 22. The first relative position and the second relative position correspond to two different angles of the insulation sheet 21, so as to realize the switching between the bearing part and the insulation sheet 21 in the two states of limiting engagement and disengagement.

[0060] The second through hole 212, which achieves the above-mentioned function, can have various structures. In some embodiments, the supporting part includes a limiting groove 221 provided on the outer peripheral surface of the support column 22. The insulation sheet 21 is provided with limiting teeth in the second through hole 212. When the insulation sheet 21 and the support column 22 are in a first relative position, the limiting teeth and the limiting groove 221 are offset from each other in the circumferential direction of the insulation sheet 21. At this time, the limiting teeth are located outside the limiting groove 221, so that the insulation sheet 21 can move relative to the support column. When the insulation sheet 21 and the support column 22 are in a second relative position, at least some of the limiting teeth are located in the limiting groove and are axially limited and engaged with the limiting groove 221. At this time, the limiting teeth are supported by the bottom surface of the limiting groove 221. Thus, when installing the insulation sheet 21, it is first fitted onto the multiple support columns 22 from top to bottom at an angle corresponding to the first relative position, and then moved down along the support columns 22 to the height of the corresponding limiting groove 221. Next, the insulation sheet 21 is rotated to an angle corresponding to the second relative position, at which point the limiting teeth move into the corresponding limiting groove 221, thereby completing the installation of the insulation sheet 21. The disassembly process of the insulation sheet 21 is the reverse of the installation process.

[0061] In some specific embodiments, such as Figure 9 and Figure 10 As shown, the second through hole 212 is composed of a through portion 212a and a protrusion 212b; wherein, the protrusion 212b serves as the aforementioned limiting tooth and is disposed on one side of the inner circumference of the through portion 212a, so that the through portion 212a is formed as shown. Figure 9 and Figure 10The whistle-shaped through-hole shown has a through portion 212a in which the width of one section of the through portion 212a in the circumferential direction of the insulation sheet 21 is greater than the width of the other section. The wider section allows the support column 22 to pass through, while the narrower section is smaller than the maximum outer diameter of the support column 22. The protrusion 212b can be integrally formed with the insulation sheet 21.

[0062] It should be noted that in the above embodiments, each second through hole 212 is composed of the through portion 212a and the protrusion 212b. However, the embodiments of the present invention are not limited to this. In other embodiments, some of the second through holes 212 may be composed of the through portion 212a and the protrusion 212b, while the remaining second through holes 212 may only include one through portion. That is, the heat insulation sheet 21 may not be engaged with the limiting groove 221 at the position of the through portion.

[0063] Based on the above-mentioned support column structure and insulation sheet structure, this embodiment also provides an installation process for the insulation sheet 21, specifically including:

[0064] S01: Align the through portions 212a of each second through hole 212 of the insulation sheet 21 with the corresponding support column 22, and fit the insulation sheet 21 onto the support column 22.

[0065] S02: Move the insulation sheet 21 along the axis of the support column 22 until it reaches its corresponding limiting groove 221;

[0066] S03: Rotate the insulation sheet 21 by a certain angle so that each protrusion 212b of the insulation sheet 21 rotates to a position that matches the limiting groove 221, thus completing the installation of the insulation sheet 21.

[0067] Specifically, in the step of rotating the insulation sheet 21 described above, the direction and angle of rotation depend on the distribution and size of the through portion 212a and the protrusion 212b. For example, the insulation sheet 21 can be rotated counterclockwise by 15 to 30° from the first relative position to rotate each protrusion 212b of the insulation sheet 21 to a second relative position that is matched with the limiting groove 221.

[0068] In some specific embodiments, such as Figure 7 and Figure 8 As shown, multiple support columns 22 extend vertically. The multiple support columns 22 are distributed at intervals along the circumference of the heating assembly 1.

[0069] For example, such as Figure 7 and Figure 8As shown, the number of support columns 22 is, for example, three. The three support columns 22 can provide sufficient support for multiple insulation sheets 21, and at the same time, can reduce the interference of the support columns 22 on the circumferential heat radiation of the heating component 1. However, this application does not limit the number of support columns 22, and the number of support columns 22 can also be other values, as long as multiple support columns 22 are sufficient to support multiple insulation sheets 21.

[0070] Furthermore, the distribution of the support columns 22 in this embodiment is not limited to the following. Figure 8 The distribution pattern is shown. In some preferred embodiments, the three support columns 22 can also be arranged in an equilateral triangle, with the center of the insulation sheet 21 as the center point, so that the three support columns 22 can be evenly distributed in a circle, thereby providing a more uniform support force to the insulation sheet 21. In other preferred embodiments, if there are three or more support columns 22, all the support columns 22 can be evenly distributed in a circle around the center of the insulation sheet 21, thereby providing a more uniform support force to the insulation sheet 21.

[0071] In some preferred embodiments, each support portion is positioned radially at a point corresponding to three-quarters of the radius of the insulation sheet 21. This ensures that the support portion provides high support strength to the insulation sheet 21, thereby achieving stable support for the insulation sheet 21.

[0072] In some specific embodiments, the support pillar 22 is made of quartz or silicon carbide, which can avoid introducing impurities that are not expected to be introduced into the semiconductor heat treatment equipment.

[0073] In some embodiments, such as Figure 2 and Figure 4 As shown, the insulation component 2 also includes a supporting top plate 23. The supporting top plate 23 is detachably connected to the top ends of multiple supporting columns 22 to connect and fix the multiple supporting columns 22, thereby providing stable support for the insulation sheet 21. When a crystal boat 3 is provided in the process chamber, the supporting top plate 23 can also be connected to the crystal boat 3 to support the crystal boat 3, so that the insulation device and the crystal boat 3 can be transferred to the reaction chamber 7 together before the semiconductor heat treatment process begins, thereby reducing installation steps and simplifying the installation process. Moreover, by making the supporting top plate 23 detachably connected to the supporting columns 22, multiple insulation sheets 21 can be installed from top to bottom from the top ends of the multiple supporting columns 22 to the corresponding bearing parts before installing the supporting top plate 23. Compared with the related technology, which can only be inserted horizontally into the limiting groove on the supporting column 22 from one side, this does not require too many restrictions on the number and distribution of the multiple supporting columns 22. For example, it does not require a sufficiently large lateral gap to allow for the horizontal insertion of the insulation sheet 21.

[0074] Specifically, such as Figure 14 and Figure 15 As shown, in related technologies, the top plate 031, bottom plate 032, and multiple support columns 033 of the insulation device 03 are all welded and fixed. This dictates that the insulation sheet 034 must be horizontally inserted into the corresponding limiting groove from the side of the multiple support columns 033. Furthermore, since the insulation sheet 034 needs to be inserted laterally, a sufficiently large lateral gap must be reserved between two adjacent support columns 033 to allow the insulation sheet 034 to pass through. Specifically, taking... Figure 15 For example, all three support columns 033 must be distributed in the upper semicircle in order to place the insulation sheet 034 between the support columns 033. It can be seen that the way the top plate 031, bottom plate 032 are fixedly connected to the multiple support columns 033 restricts the distribution of the support columns 033, and even limits the number of support columns 033.

[0075] To solve the above problems, such as Figure 4 and Figure 6 As shown, in this embodiment, by detachably connecting the supporting top plate 23 to multiple supporting columns 22, the insulation sheet 21 can be fitted onto the supporting columns 22 from top to bottom. This allows for unrestricted number and distribution of the multiple supporting columns 22, enabling the placement of the columns according to actual load-bearing requirements or spatial layout requirements. Furthermore, the multiple supporting columns 22 are not limited to the following... Figure 8 The distribution pattern is shown. Taking three support columns 22 as an example, the three support columns 22 can be distributed in an equilateral triangle with the center of gravity of the insulation sheet 21 as the center. In this way, the insulation sheet 21 and the supporting top plate 23 can be supported in the most uniform way.

[0076] Moreover, such as Figures 11 to 13 As shown, the supporting top plate 23 also has a third through hole 231. The third through hole 231 is positioned corresponding to the first through hole 211, so that the third through hole 231 can communicate with the receiving space, and the third through hole 231 can be positioned corresponding to the heating component 1. The third through hole 231 can increase the occurrence of thermal convection in the peripheral and top areas of the heating component 1, so that the airflow heated by the heating component 1 rises and directly passes through the third through hole 231 into the reaction chamber 7, thereby improving the heating efficiency of the reaction chamber 7.

[0077] In some specific embodiments, the third through hole 231 can be concentrically positioned with the supporting top plate 23, and correspondingly, the plurality of first through holes 211 are also coaxially positioned with the central axis of the supporting top plate 23. Furthermore, the plurality of insulation sheets 21 can also be coaxially positioned with the central axis of the plurality of supporting top plates 23. In this way, heat convection can occur in the central region of the plurality of insulation sheets 21 and the supporting top plate 23, thereby utilizing the heat convection effect to uniformly heat the plurality of insulation sheets 21 and the supporting top plate 23, further improving the heating effect of the heating assembly 1 on the insulation assembly 2.

[0078] In some specific embodiments, the diameter of the third through hole 231 is 1 / 5 to 1 / 3 of the diameter of the supporting top plate 23. Within this diameter range, the third through hole 231 can allow sufficient airflow to pass through without causing a decrease in the strength of the supporting top plate 23, which would prevent the supporting top plate 23 from fixing the supporting column 22 or from supporting the crystal boat 3.

[0079] In some specific embodiments, such as Figures 11 to 13 As shown, the supporting top plate 23 has mounting holes 232 corresponding to a plurality of support columns 22; the ends of the plurality of support columns 22 can be inserted into the corresponding mounting holes 232. Each mounting hole 232 is, for example, a blind hole; or, as... Figure 12 As shown, the size of the mounting hole 232 at the end furthest from the support column 22 is smaller than that at the other end, so as to fix the support column 22 in the axial direction.

[0080] However, the connection method between the supporting top plate 23 and the multiple supporting columns 22 in this application is not limited to the above embodiments. In some feasible embodiments, the supporting top plate 23 and the multiple supporting columns 22 can also be connected by screws, magnetic connections, or other methods, so that the supporting top plate 23 and the multiple supporting columns 22 can be detachably connected.

[0081] In some embodiments, such as Figure 2 and Figure 4 As shown, the insulation component 2 also includes a supporting base plate 24, which is used to connect to the process door 4. The supporting base plate 24 is connected to the bottom ends of multiple supporting columns 22 to ensure that the positions of the multiple supporting columns 22 are fixed, thereby providing stable support for the insulation sheet 21, and the entire insulation device can be fixedly connected to the process door 4 through the supporting base plate 24. The heating component 1 is connected to the supporting base plate 24 to fix the heating component 1 on the heating base plate, and the entire insulation device can be installed on the process door 4 through the supporting base plate 24.

[0082] In some specific embodiments, the support base plate 24 and the plurality of support columns 22 are fixed together, for example, by welding. Alternatively, the support base plate 24 has mounting holes that correspond one-to-one with the plurality of support columns 22; the ends of the plurality of support columns 22 can be inserted into the corresponding mounting holes.

[0083] In some embodiments, the heating assembly 1 includes a heating column body 11 and an electric heating element. The bottom end of the heating column body 11 is connected to the supporting base plate 24; the electric heating element is disposed inside the heating column body 11 and is used to generate heat using the electrothermal effect. The orthogonal projection of the heating column body 11 onto the supporting top plate 23 is located within the third through hole 231, so that the heat radiated by the heating column body 11 passes through the third through hole 231 and directly enters the reaction chamber 7, and the airflow rising around the heating column body 11 due to heating can directly pass through the third through hole 231 and enter the reaction chamber 7, thereby improving the heating effect on the reaction chamber 7.

[0084] It should be noted that this application does not limit the number of heating column bodies 11, and the heating column bodies 11 can be as follows: Figure 2 The one shown can also be multiple, and correspondingly, the number of electric heating components disposed inside the heating column body 11 can also be multiple.

[0085] like Figure 4 As shown, an auxiliary electrode 241 connected to an external power source is provided in the support base plate 24, so that the heating component can be connected to the external power source through the auxiliary electrode 241. Specifically, an auxiliary electrode 241 is provided in the support base plate 24, one end of which extends outside the support base plate 24 for connection to an external power source; the power supply end of the heating component 1 is connected to the auxiliary electrode 241.

[0086] In some specific embodiments, such as Figure 16 As shown, a mounting groove structure is also machined on the surface of the supporting base plate 24 facing the insulation sheet 21, so that the bottom edge of the heating column body 11 can be embedded in the mounting groove structure, thereby achieving the limiting and fixing of the heating column body 11. Moreover, as Figure 7 and Figure 16As shown, the bottom end of the heating column body 11 has a mounting flange 111 protruding from the outer peripheral surface of the heating column body 11. This mounting flange 111 is disposed within the aforementioned mounting groove structure and corresponds to the shape of the mounting groove structure. The outer peripheral surface of the mounting flange 111 mates with the inner peripheral surface of the mounting groove structure to limit and fix the support base plate 24 to the heating column body 11, and facilitates the operator's insertion of the heating column body 11 to the mounting flange 111 during installation. The mounting flange 111 has multiple mounting holes, and correspondingly, multiple threaded holes are formed on the bottom surface of the mounting groove structure. Multiple screws 6 pass through these mounting holes and are threaded into the corresponding threaded holes, thereby connecting and fixing the mounting flange 111 to the support base plate 24, and ultimately fixing the entire heating column body 11 to the support base plate 24. Specifically, the aforementioned screws 6 can be made of quartz or silicon carbide to avoid introducing impurities undesirable to the semiconductor heat treatment equipment, thus preventing contamination of the chamber.

[0087] In some specific embodiments, the heating column body 11 includes a hollow heat-conducting shell. The heating element includes a heating wire 12 wound inside the heat-conducting shell. In some embodiments, such as Figure 7 As shown, the auxiliary electrode 241 is disposed, for example, in the central region of the supporting base plate 24, corresponding to the position of the heating component 1, so that the heating wire 12 can be connected to an external power source through the auxiliary electrode 241 to radiate heat outward using the electrothermal effect, and conduct the heat to the outside through the heat-conducting shell. In some specific embodiments, the electrothermal component may also include multiple spaced heating elements distributed inside the hollow heat-conducting shell.

[0088] In some specific embodiments, the heating column body 11 comprises a solid heat-conducting column. The heating element includes a heating wire 12 embedded within the heat-conducting column. The heat-conducting column is made of a thermally conductive material to conduct the heat generated by the heating wire 12 to the outside of the heat-conducting column. In some specific embodiments, the heating element may further include multiple spaced heating elements embedded within the solid heat-conducting column.

[0089] In some embodiments, the heating capacity of the heating component 1 gradually decreases towards the process door 4 to reduce the heat conducted from the insulation device to the process door 4. This allows for heating of the bottom region of the reaction chamber 7 while preventing the process door 4 from overheating and being damaged. The heating capacity of the heating component 1 can be characterized by the amount of heat radiated from it to the outside, by its heating power, or by other parameters that control the heat conducted from the insulation device to the process door 4.

[0090] Taking the heating element 12 as an example, its heating capacity can be adjusted by changing the distribution density of the heating element 12. For example, the closer to the process door 4, the lower the distribution density of the heating element 12, meaning the heating element 12 is arranged with a denser upper section and a sparser lower section within the heating column body 11. Similarly, taking the heating element as an example, its heating capacity can be adjusted by changing the distribution density of the heating element. For example, the closer to the process door 4, the lower the distribution density of the heating element, meaning the heating element is distributed with a denser upper section and a sparser lower section within the heating column body 11. Alternatively, the output power of the heating element can be set so that the output power is lower the closer it is to the process door 4, thereby reducing the heat conducted from the insulation device to the process door 4.

[0091] Furthermore, the density of the heating elements and the power output distribution can be adjusted according to process requirements. Figure 3 Taking the semiconductor heat treatment equipment shown as an example, if the temperature at the air inlet device 9 is low, the arrangement density of the heating wires 12 on the side close to the air inlet device 9 can be increased so that the temperature of the heating component 1 gradually increases in the direction close to the air inlet device 9, thereby achieving preheating of the process gas during the air inlet process.

[0092] In some specific embodiments, in order to reduce the heat conducted from the heat insulation device to the process door 4, heat insulation material can be added to the bottom of the heating column body 11 to prevent the process door 4 from overheating.

[0093] In some specific embodiments, when there is only one heating column body 11, the diameter of the heating column body 11 can be 1 / 5 to 1 / 3 of the diameter of the insulation sheet 21. Within this size range, multiple insulation sheets 21 can insulate the heating column body 11, and the heat radiated outward by the heating column body 11 is sufficient to cover the insulation sheet 21, thereby enabling the heating column body 11 and the heated insulation sheet 21 to jointly radiate heat to the periphery to heat the bottom area of ​​the reaction chamber 7. Moreover, the diameter of the first through hole 211 on the insulation sheet 21 is usually equal to or slightly larger than the diameter of the heating column body 11 to allow the heating column body 11 to pass through; and the aforementioned diameter range of the heating column body 11 can ensure that the first through hole 211 is not too large, so as to ensure the strength of the corresponding insulation sheet 21, thereby reducing the risk of accidental damage to the insulation sheet 21.

[0094] In some specific embodiments, when there are multiple heating column bodies 11, the multiple heating column bodies 11 can be distributed within a range of 1 / 5 to 1 / 3 of the diameter of the insulation sheet 21. This distribution allows the multiple insulation sheets 21 to insulate the multiple heating column bodies 11, and the heat radiated outward by the multiple heating column bodies 11 is sufficient to cover the insulation sheet 21, thereby enabling the multiple heating column bodies 11 and the heated insulation sheet 21 to jointly radiate heat to the periphery to heat the bottom region of the reaction chamber 7. Furthermore, similar to the above embodiments, the diameter of the first through hole 211 on the insulation sheet 21 is typically equal to or slightly larger than the outer periphery of the distribution area of ​​the multiple heating column bodies 11, allowing all the heating column bodies 11 to pass through. The aforementioned distribution of the multiple heating column bodies 11 ensures that the first through hole 211 is not too large, thus guaranteeing the strength of the corresponding insulation sheet 21 and reducing the risk of accidental damage to the insulation sheet 21.

[0095] In some specific embodiments, when there are multiple heating column bodies 11, the number of first through holes 211 in each insulation sheet 21 is consistent with the number of heating column bodies 11 and is arranged one-to-one with multiple heating column bodies 11, so that multiple heating column bodies 11 can be respectively inserted into the corresponding through hole 211. The multiple first through holes 211 in each insulation sheet 21 can be evenly distributed in the corresponding insulation sheet 21. Moreover, by adjusting the distribution of the multiple first through holes 211 in the insulation sheet 21, the distribution of the multiple heating column bodies 11 in the insulation device can be adjusted, thereby adjusting the heating rate of the heating column bodies 11 on the reaction chamber 7. Specifically, at the same output temperature, the closer the multiple heating column bodies 11 are distributed to the outer periphery of the insulation device, the faster their heating rate on the bottom region of the reaction chamber 7, and correspondingly, the faster the temperature rises in the bottom region of the reaction chamber 7.

[0096] In some preferred embodiments, the surface material of the heating column body 11 is quartz or silicon carbide to avoid introducing impurities undesirable to the semiconductor heat treatment equipment, thereby avoiding contamination of the chamber.

[0097] In some embodiments, the heat preservation device further includes a temperature measuring component and a control component. The temperature measuring component is used to detect the actual temperature of the heating component 1. The control component is communicatively connected to both the heating component 1 and the temperature measuring component, and is used to adjust the output power of the heating component 1 according to its actual temperature, so that the actual temperature of the heating component 1 is maintained at a preset temperature. The preset temperature satisfies the requirement of improving the uniformity of the temperature field in the vertical direction within the reaction chamber 7; and the preset temperature can be either a single temperature value or a temperature range.

[0098] It is feasible to make the aforementioned preset temperature consistent with the process temperature inside the reaction chamber, so that the actual temperature of the surface of the heating component 1 can be controlled to approach the process temperature infinitely, or even equal to the process temperature, thereby cooperating with the furnace body 5 to make the temperature of each area inside the reaction chamber the process temperature.

[0099] In some specific embodiments, such as Figure 7 As shown, the temperature sensing component is, for example, a thermocouple 13, which can measure the output temperature of the heating component 1 using the electrothermal effect. Furthermore, the thermocouple 13 can be connected to an external control device to send the detected temperature information to the external control device, allowing the external control device to adjust the output power of the heating wire 12 according to the actual temperature. Specifically, a PID algorithm (i.e., proportional-integral-derivative algorithm) can be used to control the output power of the heating wire 12 so that the actual output temperature of the heating component 1 can be balanced with that of the furnace body 5. This achieves more precise control over the heating efficiency of the heating component 1 on the bottom region of the reaction chamber 7, and further more precisely adjusts the temperature field uniformity of the reaction chamber 7 in the vertical direction.

[0100] Furthermore, the temperature-sensing thermocouple 13 can also be connected to an external control device through the aforementioned auxiliary electrode 241. Specifically, the process gate 4 is provided with a through hole for the auxiliary electrode 241 to pass through, or the process gate 4 is provided with a lead wire for electrical connection to an external power supply device and an external control device, so that the auxiliary electrode 241 can be electrically connected to the external power supply device and the external control device through the lead wire.

[0101] As another technical solution, this embodiment also provides a semiconductor heat treatment device, such as... Figure 3 As shown, it includes a reaction chamber 7, a furnace body 5, a process door 4, and a heat preservation device as described above. The furnace body 5 is arranged around the outer periphery and top of the reaction chamber 7 for heating the reaction chamber 7. The process door 4 is located at the bottom port of the reaction chamber 7 and is used to control the opening and closing of the bottom port of the reaction chamber 7. During some heat treatment processes, a wafer boat 3 can be placed inside the reaction chamber 7 to carry multiple wafers for heat treatment.

[0102] Furthermore, the heat preservation device is installed in the reaction chamber 7 and on the process door 4. As mentioned above, the heat preservation device can heat and preserve the bottom area of ​​the reaction chamber 7, so as to work with the furnace body 5 to make the temperature field inside the reaction chamber 7 uniform. Therefore, since the heat preservation device can heat the bottom area of ​​the reaction chamber 7, the actual output temperature of the bottom area of ​​the furnace body 5 does not need to be too high. In other words, by setting the heat preservation device, the output power of the bottom area of ​​the furnace body 5 can be reduced, thereby improving the service life of the heating coils inside the furnace body 5.

[0103] Based on the aforementioned semiconductor heat treatment equipment, this embodiment also provides an installation method for installing the heat preservation device and the crystal boat 3 inside the reaction chamber 7, the method specifically including:

[0104] S1: Fix the support base plate 24 of the heat preservation device onto the process door 4;

[0105] S2: Fix the heating column body 11 of the heating component 1 to the support base plate 24, and connect the heating wire 12 to the auxiliary electrode 241 on the support base plate 24;

[0106] S3: Install multiple insulation sheets 21 sequentially into the corresponding bearing parts on the support column 22;

[0107] S4: Connect the mounting holes 232 on the bottom surface of the support plate 23 to the ends of each support column 22 one by one;

[0108] S5: Place a quartz crystal boat 3 or a silicon carbide crystal boat 3 on the top surface of the supporting top plate 23, and connect and fix it with quartz screws or silicon carbide screws accordingly.

[0109] S6: Finally, the crystal boat 3, the heat preservation device and the process door 4 are installed into the reaction chamber 7 through the bottom port of the reaction chamber 7.

[0110] The heat preservation device and semiconductor heat treatment equipment proposed in the embodiments of the present invention can heat the bottom area of ​​the reaction chamber and reduce the heat exchange between the reaction chamber and the process gate, thereby cooperating with the furnace body of the semiconductor process chamber to achieve uniform heating of each area of ​​the reaction chamber, thereby improving the process effect and increasing the production capacity.

[0111] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A heat preservation device for a semiconductor heat treatment apparatus, the semiconductor heat treatment apparatus comprising a reaction chamber and a process door, characterized in that, The heat preservation device is installed on the process door and is used to keep the heat in the reaction chamber warm. The heat preservation device includes a heat preservation component and a heating component. The heat preservation component has a receiving space. The heating component is installed in the receiving space and is used to radiate heat to the heat preservation component.

2. The heat preservation device according to claim 1, characterized in that, The insulation component includes a plurality of insulation sheets spaced apart in the vertical direction. Each insulation sheet is provided with a first through hole, and the first through holes arranged in the axial direction together constitute the accommodating space.

3. The heat preservation device according to claim 2, characterized in that, The insulation component further includes multiple support columns, at least two of which are provided with a support portion for supporting the insulation sheet; each insulation sheet is provided with multiple second through holes; each second through hole corresponds to each support column, and the second through hole is configured to allow the insulation sheet and the support column to move relative to each other along the support column when they are in a first relative position, and the support portion and the insulation sheet are axially limited and engaged when they are in a second relative position.

4. The heat preservation device according to claim 3, characterized in that, The bearing portion includes a limiting groove disposed on the outer peripheral surface of the support column; The insulation sheet has a limiting tooth in the second through hole. When the insulation sheet and the support column are in the first relative position, the limiting tooth and the limiting groove are offset from each other in the circumferential direction of the insulation sheet so that the insulation sheet can move relative to the support column. When the insulation sheet and the support column are in the second relative position, at least a portion of the limiting tooth is located in the limiting groove and is axially limited and engaged with the limiting groove.

5. The heat preservation device according to claim 3, characterized in that, The insulation component also includes a supporting top plate; the supporting top plate is detachably connected to the top ends of the plurality of supporting columns; The supporting top plate has a third through hole, which is positioned corresponding to the first through hole.

6. The heat preservation device according to claim 5, characterized in that, The insulation component also includes a supporting base plate, which is used to connect to the process door; The supporting base plate is fixedly connected to the bottom ends of the plurality of supporting columns; the heating assembly is connected to the supporting base plate.

7. The heat preservation device according to claim 6, characterized in that, The heating assembly includes a heating column body and an electric heating component; the bottom end of the heating column body is connected to the supporting base plate; the orthographic projection of the heating column body on the supporting top plate is located within the third through hole; The electrothermal component is disposed inside the heating column body and is used to generate heat using the electrothermal effect; The supporting base plate is provided with an auxiliary electrode that is connected to an external power source, so that the heating component can be connected to the external power source through the auxiliary electrode.

8. The heat preservation device according to claim 1, characterized in that, The heating capacity of the heating component gradually decreases in the direction approaching the process gate.

9. The heat preservation device according to claim 1, characterized in that, Also includes: A temperature sensing component is used to detect the actual temperature of the heating component. A control component is communicatively connected to both the heating component and the temperature measuring component, and is used to adjust the output power of the heating component according to the actual temperature of the heating component, so as to keep the actual temperature of the heating component at a preset temperature.

10. A semiconductor heat treatment apparatus, characterized in that, Includes a reaction chamber, furnace body, process door, and a heat preservation device as described in any one of claims 1-9; The furnace body is arranged around the outer periphery and top of the reaction chamber for heating the reaction chamber; The process gate is located at the bottom port of the reaction chamber and is used to control the opening and closing of the bottom port of the reaction chamber. The heat preservation device is installed on the process door.

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