Method for preparing efficient and stable wide-band-gap perovskite solar cell based on double-layer interface passivation

Abstract

The invention discloses a preparation method of an efficient and stable wide-band-gap perovskite solar cell based on double-layer interface passivation, and relates to the technical field of solar photovoltaics. According to the method, on the basis of 9-octadecenyl amine iodide (OAmI) and phenethyl amine iodide (PEAI), the OAmI anchors a crystal boundary to inhibit ion migration, and cooperates with the PEAI to generate two-dimensional perovskite in situ to optimize energy band alignment, so that deep-shallow energy level defect synergistic passivation is realized. Under the optimal condition, the photoelectric conversion efficiency of the prepared solar cell reaches 22.54%, the initial efficiency of 86.4% is still kept after continuous irradiation of one sunlight for 500 hours, and the working stability of the wide-band-gap perovskite cell, especially the stability under the continuous illumination condition, is remarkably improved.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of perovskite solar cells, in particular to a preparation method of a high-efficiency and stable wide-bandgap perovskite solar cell based on double-layer interface passivation. BACKGROUND

[0002] Since the first application of organic-inorganic halide perovskite materials in solar cells in 2009, the excellent photoelectric properties have driven the efficiency of single-junction devices to jump from less than 4% to 27.3%, close to the limit of crystalline silicon cells. In the meantime, perovskite materials (ABX3) have become the core candidate for the next generation of photovoltaic technology due to their adjustable band gap (1.5-2.3 eV) and low solution preparation cost.

[0003] By adjusting the bromine-iodine ratio in the perovskite material, a wide-bandgap structure of 1.65-1.85 eV can be achieved. In the prior art, the mixed halide wide-bandgap perovskite is usually stacked with conventional silicon cells or other narrow-bandgap bottom cells to construct a multi-junction device, so as to further break through the theoretical efficiency limit of single-junction cells. However, the mixed halide wide-bandgap perovskite is prone to separation of iodine-rich phase and bromine-rich phase under the action of light, heat and bias, resulting in local narrowing of the energy band, enhancement of non-radiative recombination, and thus rapid decay of photoelectric performance. Therefore, suppressing defects and ion migration at the interface and grain boundary is the core issue for improving the stability of wide-bandgap perovskite cells.

[0004] Since phenethylammonium iodide (PEAI) can generate a two-dimensional structure (PEA2PbI4) in situ on the perovskite surface to passivate halogen vacancies, it is generally used for surface treatment in the prior art. However, PEAI + Ions will diffuse along the grain boundary to the bulk phase, causing lattice distortion under light and heat stress, which leads to rapid degradation of device performance. 9-octadecenylammonium iodide (OAmI) has a long-chain alkyl group, which is theoretically expected to block ion migration. However, when used alone, the steric hindrance of the octadecenyl group prevents the ordered stacking of lead iodine octahedra, and a stable two-dimensional layer cannot be formed, resulting in mismatch of interface energy levels and poor thermal stability. This structural defect causes a large open-circuit voltage loss and severe light stability test for OAmI single-layer devices.

[0005] In summary, wide-bandgap perovskite solar cells must meet both high defect passivation efficiency and long-term ion blocking ability to play an efficiency advantage in stacked photovoltaics. Single-layer passivation has inherent defects: PEAI can optimize the energy band structure, but it will accelerate ion migration; OAmI can inhibit migration, but it will destroy the interface stability. Therefore, a new collaborative passivation strategy is urgently needed to maintain a low interface state density while building an ion diffusion barrier. SUMMARY

[0006] The application provides a preparation method of a high-efficiency stable wide-bandgap perovskite solar cell based on double-layer interface passivation, and the method is based on 9-octadecenyl iodide amine (OAmI) and phenethyl iodide amine (PEAI), ion migration is inhibited through OAmI layer anchoring grain boundaries, and an ordered two-dimensional perovskite structure is constructed in cooperation with the PEAI layer, so that the problems of deep energy level defect passivation and interface stability are solved, and the working stability of the wide-bandgap perovskite cell can be significantly improved, especially the stability under continuous light conditions.

[0007] The technical scheme of the application is:

[0008] A wide-bandgap perovskite solar cell based on double-layer interface passivation, characterized by comprising a conductive substrate, a hole transport layer, a wide-bandgap perovskite light-absorbing layer, a double-interface passivation layer, an electron transport layer, a charge buffer layer and a metal electrode which are sequentially stacked.

[0009] The double-interface passivation layer comprises an OAmI passivation layer and a PEAI passivation layer, and the OAmI passivation layer directly covers the surface and grain boundaries of the wide-bandgap perovskite light-absorbing layer, and is used for interface and grain boundary defect passivation and ion migration blocking, and the PEAI passivation layer covers the OAmI passivation layer, and is used for further passivation of defects and optimization of energy band alignment.

[0010] The hole transport layer material is selected from an organic monomolecular layer or a polymer.

[0011] The wide-bandgap perovskite light-absorbing layer material is selected from cesium iodide (CsI), lead bromide (PbBr2), methylamine hydrobromide (MABr), formamidinium hydroiodide (FAI) or lead iodide (PbI2).

[0012] The electron transport layer material is selected from [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or fullerene (C 60 );

[0013] The material of the metal electrode is selected from Ag, Au, Al or Cu.

[0014] Further,

[0015] The Chinese name of the OAmI is 9-octadecenyl iodide amine, and the structural formula is:

[0016] ;

[0017] The Chinese name of the PEAI is phenethyl iodide amine, and the structural formula is:

[0018] ;

[0019] The organic monolayer is selected from (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (MeO-2PACz), [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid (MeO-4PACz), or (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz);

[0020] The polymer is selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).

[0021] The application also provides a preparation method of the double-layer interface passivated wide-bandgap perovskite solar cell.

[0022] Step 1: conductive substrate treatment;

[0023] Step 2: spin-coating a hole transport layer material solution on the conductive substrate treated in step 1, and then annealing treatment to form a hole transport layer;

[0024] Step 3: spin-coating a wide-bandgap perovskite precursor solution on the hole transport layer formed in step 2, and then annealing treatment to form a wide-bandgap perovskite light-absorbing layer;

[0025] Step 4: spin-coating an OAmI alcohol solution on the wide-bandgap perovskite light-absorbing layer formed in step 3, and then annealing treatment to form an OAmI passivation layer;

[0026] Step 5: spin-coating a PEAI alcohol solution on the OAmI passivation layer formed in step 4, and then annealing treatment to form a PEAI passivation layer;

[0027] Step 6: preparing an electron transport layer on the PEAI passivation layer formed in step 5:

[0028] Scheme A: spin-coating a [6,6]-phenyl C61 butyric acid methyl ester chlorobenzene solution on the PEAI passivation layer to form a PCBM electron transport layer;

[0029] Scheme B: directly depositing a fullerene (C 60 ) thin film on the PEAI passivation layer by a thermal evaporation method to form a C 60 electron transport layer;

[0030] Step 7: depositing a charge buffer layer on the electron transport layer formed in step 6 by a spin-coating method:

[0031] Scheme A: spin-coating a bathocuproine (BCP) isopropyl alcohol solution on the electron transport layer to form a BCP charge buffer layer;

[0032] Scheme B: BATHCP is evaporated on the ETL under vacuum to form a BCP charge buffer layer;

[0033] Step 8: A metal electrode is deposited on the charge buffer layer formed in Step 7 by thermal evaporation.

[0034] Further, the preparation method of the hole transport layer material solution is as follows: when the selected hole transport layer material is an organic monomolecular layer, the hole transport layer material is dissolved in an alcohol solvent to obtain a solution with a concentration of 0.3-1.0 mg / mL; when the selected hole transport layer material is a polymer, the hole transport layer material is dissolved in chlorobenzene to obtain a solution with a concentration of 1.0-3.0 mg / mL.

[0035] The alcohol solvent includes but is not limited to methanol, ethanol, and isopropanol.

[0036] Further, the preparation method of the wide-bandgap perovskite precursor solution is as follows: in an inert atmosphere, the wide-bandgap perovskite light-absorbing layer material is dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) to obtain a solution with a concentration of 0.8-2.3 M.

[0037] Further, the preparation method of the OAmI alcohol solution is as follows: OAmI is dissolved in an alcohol solvent to obtain a solution with a concentration of 0.5-2 mg / mL.

[0038] The alcohol solvent includes but is not limited to methanol, ethanol, and isopropanol.

[0039] Further, the preparation method of the PEAI alcohol solution is as follows: PEAI is dissolved in an alcohol solvent to obtain a solution with a concentration of 0.5-10 mg / mL.

[0040] The alcohol solvent includes but is not limited to methanol, ethanol, and isopropanol.

[0041] Further, the preparation method of the [6,6]-phenyl C61 butyric acid methyl ester chlorobenzene solution is as follows: [6,6]-phenyl C61 butyric acid methyl ester (PCBM) is dissolved in chlorobenzene to obtain a solution with a concentration of 10-30 mg / mL.

[0042] Further, the preparation method of the BATHCP (BCP) isopropanol solution is as follows: BATHCP (BCP) is dissolved in isopropanol to obtain a solution with a concentration of 0.5-1.0 mg / mL.

[0043] Further,

[0044] The implementation of step 1 is: the indium tin oxide (ITO) or fluorine-doped SnO2 conductive glass (FTO) substrate is sequentially subjected to multi-step ultrasonic cleaning with glass cleaning agent, deionized water and polar solvent, and then dried, and subjected to surface activation by ultraviolet ozone treatment or plasma treatment;

[0045] In step 2, the rotation speed of the hole transport layer material solution is 3000-5000 rpm, the time is 20-40 s, the acceleration is 2000-3000 rpm / s, and the annealing treatment temperature is 80-150℃, and the time is 10-20 min;

[0046] In step 3, the rotation speed of the wide-bandgap perovskite precursor solution is 2000-6000 rpm, the time is 30-40 s, the acceleration is 2000-3000 rpm / s, the annealing treatment temperature is 90-140℃, the time is 5-30 min, the anti-solvent is toluene, chlorobenzene or ethyl acetate, and the thickness of the wide-bandgap perovskite light-absorbing layer is 300-800 nm, and the band gap is 1.65-1.85 eV;

[0047] In step 4, the rotation speed of the OAmI alcohol solution is 1500-6000 rpm, the time is 10-60 s, the acceleration is 1000-4000 rpm / s, the annealing treatment temperature is 70-120℃, and the time is 5-20 min;

[0048] In step 5, the rotation speed of the PEAI alcohol solution is 1500-6000 rpm, the time is 10-60 s, the acceleration is 1000-4000 rpm / s, the annealing treatment temperature is 60-110℃, and the time is 5-20 min;

[0049] In step 6, scheme A rotates the [6,6]-phenyl C61 butyric acid methyl ester chlorobenzene solution at a speed of 1000-3000 rpm for 20-60 s, and the acceleration is 1000-2000 rpm / s; scheme B is carried out under a vacuum pressure of less than 5×10 -4 Pa, the deposition rate of the C 60 thin film is 0.5-2.0 Å / s, and the formed C 60 The thickness of the electron transport layer is 20-60 nm;

[0050] In step 7, scheme A rotates the bathocuproin (BCP) isopropyl alcohol solution at a speed of 3000-5000 rpm for 20-40 s, and the acceleration is 2000-3000 rpm / s; scheme B evaporates the bathocuproin (BCP) layer to a thickness of 5-10 nm;

[0051] In step 8, the thickness of the deposited metal electrode is 50-150 nm.

[0052] The beneficial effects of the present application are:

[0053] Compared with the existing single-layer PEAI passivation or non-passivation wide-bandgap perovskite cells, the OAmI / PEAI double-layer interface passivation strategy of the present application has the following remarkable advantages:

[0054] 1. Deep-shallow defect synergistic inhibition: The long-chain hydrophobic group of OAmI is firmly adsorbed on the perovskite surface and penetrates into the grain boundary, coordinates with lead ions by using amino groups, and preferentially fills deep-level lead ion defects, while the overlying PEAI generates a two-dimensional perovskite in situ on the surface, effectively passivating shallow-level halogen vacancies and organic cation vacancies;

[0055] 2. Ion migration barrier increase: The long alkyl chain of OAmI forms a diffusion barrier layer at the grain boundary, increasing the ion migration activation energy of iodine ions and bromine ions, and the OAmI passivation layer further blocks the migration of PEA+ to the 3D perovskite bulk phase;

[0056] 3. Simple process, strong compatibility: The double-layer passivation can be completed by two-step sequential spin coating without the need for high temperature or vacuum evaporation, with a wide parameter window, without affecting optical transmittance and series resistance, especially suitable for perovskite-silicon four-terminal or three-terminal stacked structures with a top bandgap of 1.7-1.8 eV, which can be directly grafted to existing solution production lines, with the potential for roll-to-roll and flexible substrate mass production;

[0057] 4. Efficiency and stability are improved simultaneously: The present application introduces OAmI / PEAI synergistic passivation layer at the wide-bandgap perovskite and charge transport interface, not only significantly improving the initial efficiency of the device, but also prolonging the service life of the device under light accelerated stress by suppressing PEA + ion migration. BRIEF DESCRIPTION OF DRAWINGS

[0058] Figure 1 is a structure diagram of the perovskite solar cell with the upper interface OAmI and PEAI double-layer modification of the present application;

[0059] Figure 2 is a current density-voltage curve diagram of the perovskite solar cell with the upper interface passivation of 0.5 mg / mL OAmI and 2.0 mg / mL PEAI of Example 1 of the present application;

[0060] Figure 3 is a light stability curve diagram of the perovskite solar cell with the upper interface passivation of 0.5 mg / mL OAmI and 2.0 mg / mL PEAI of Example 1 of the present application under one sun light;

[0061] Figure 4Current density-voltage curve of perovskite solar cell with upper interface passivation by 1.0 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 2 of the present application;

[0062] Figure 5 Photostability curve of perovskite solar cell with upper interface passivation by 1.0 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 2 of the present application under one sun light;

[0063] Figure 6 Current density-voltage curve of perovskite solar cell with upper interface passivation by 1.5 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 3 of the present application;

[0064] Figure 7 Photostability curve of perovskite solar cell with upper interface passivation by 1.5 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 3 of the present application under one sun light;

[0065] Figure 8 Current density-voltage curve of perovskite solar cell with upper interface passivation by 2.0 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 4 of the present application;

[0066] Figure 9 Photostability curve of perovskite solar cell with upper interface passivation by 2.0 mg / mL of OAmI and 2.0 mg / mL of PEAI for Example 4 of the present application under one sun light;

[0067] Figure 10 Current density-voltage curve of perovskite solar cell with upper interface passivation by 2.0 mg / mL of PEAI for Comparative Example 1 of the present application;

[0068] Figure 11 Photostability curve of perovskite solar cell with upper interface passivation by 2.0 mg / mL of PEAI for Comparative Example 1 of the present application under one sun light;

[0069] Figure 12 Current density-voltage curve of perovskite solar cell with upper interface passivation by 1.0 mg / mL of OAmI for Comparative Example 2 of the present application;

[0070] Figure 13 Photostability curve of perovskite solar cell with upper interface passivation by 1.0 mg / mL of OAmI for Comparative Example 2 of the present application under one sun light. DETAILED DESCRIPTION

[0071] Referring to Figure 1 The application provides a high-efficiency stable wide-bandgap perovskite solar cell based on double-layer interface passivation, which comprises a conductive substrate, a hole transport layer, a wide-bandgap perovskite light-absorbing layer, a double-layer passivation layer, an electron transport layer, a charge buffer layer and a metal electrode which are sequentially stacked, wherein the double-layer passivation layer comprises an OAmI passivation layer and a PEAI passivation layer.

[0072] The OAmI passivation layer directly covers the surface and grain boundary of the wide-bandgap perovskite light-absorbing layer, and the long alkyl chain of the OAmI passivation layer penetrates into the perovskite grain boundary to form a coordination bond with uncoordinated lead ions to fill deep-level defects, and at the same time, the OAmI passivation layer forms a PEA + ion migration barrier;

[0073] The PEAI passivation layer covers the OAmI passivation layer and generates a two-dimensional perovskite structure in situ by reaction of a phenethyl iodide amine, which can further passivate shallow-level halogen vacancies and optimize the interface energy level alignment.

[0074] The application further provides a method for preparing the wide-bandgap perovskite solar cell, and the method comprises the following steps:

[0075] Step 1: conductive substrate treatment

[0076] An indium tin oxide (ITO) or fluorine-doped SnO2 conductive glass (FTO) substrate is subjected to multi-step ultrasonic cleaning with a glass cleaner, deionized water and a polar solvent, and then is blown dry and subjected to surface activation by ultraviolet ozone treatment or plasma treatment.

[0077] Step 2: preparation of a hole transport layer

[0078] First, a hole transport layer material solution is prepared

[0079] The hole transport layer material is selected from an organic monomolecular layer or a polymer, wherein the organic monomolecular layer is selected from (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid (MeO-2PACz), [4-(3,6-dimethoxy-9H-carbazol-9-yl)butyl]phosphonic acid (MeO-4PACz) or (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), and the polymer is selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).

[0080] Preferably, MeO-2PACz, MeO-4PACz or 2PACz is dissolved in an alcohol solvent (methanol, ethanol, isopropanol, etc.) to obtain a solution with a concentration of 0.3-1.0 mg / mL, and PTAA is dissolved in chlorobenzene to obtain a solution with a concentration of 1.0-3.0 mg / mL.

[0081] Then spin-coat the hole transport layer material solution on the treated conductive substrate from step 1 at a spin speed of 3000-5000 rpm for 20-40 s with an acceleration of 2000-3000 rpm / s;

[0082] Finally, anneal the sample at a temperature of 80-150 °C for 10-20 min to form the hole transport layer;

[0083] Step 3: Preparation of wide bandgap perovskite light absorbing layer:

[0084] First, prepare a wide bandgap perovskite precursor solution: dissolve cesium iodide (CsI), lead bromide (PbBr2), methylamine hydrobromide (MABr), formamidinium iodide (FAI), or lead iodide (PbI2) in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) to prepare a solution with a concentration of 0.8-2.3 M in an inert atmosphere;

[0085] Then spin-coat the wide bandgap perovskite precursor solution on the hole transport layer formed in step 2 at a spin speed of 2000-6000 rpm for 30-40 s with an acceleration of 2000-3000 rpm / s, and add anti-solvent dropwise at the end of the spin-coating process to induce crystallization, where the anti-solvent is toluene, chlorobenzene, or ethyl acetate;

[0086] Finally, anneal the sample at a temperature of 90-140 °C for 5-30 min to form a wide bandgap perovskite light absorbing layer with a thickness of 300-800 nm and a bandgap of 1.65-1.85 eV;

[0087] Step 4: Preparation of OAmI passivation layer:

[0088] Dissolve OAmI in an alcoholic solvent (methanol, ethanol, isopropanol, etc.) to obtain an OAmI alcoholic solution with a concentration of 0.5-2 mg / mL, spin-coat the solution on the wide bandgap perovskite light absorbing layer formed in step 3 at a spin speed of 1500-6000 rpm for 10-60 s with an acceleration of 1000-4000 rpm / s, and then anneal the sample at a temperature of 70-120 °C for 5-20 min to form the OAmI passivation layer;

[0089] Step 5: Preparation of PEAI passivation layer:

[0090] Dissolve PEAI in an alcoholic solvent (methanol, ethanol, isopropanol, etc.) to obtain a PEAI alcoholic solution with a concentration of 0.5-10 mg / mL, spin-coat the solution on the OAmI passivation layer formed in step 4 at a spin speed of 1500-6000 rpm for 10-60 s with an acceleration of 1000-4000 rpm / s, and then anneal the sample at a temperature of 60-110 °C for 5-20 min to form the PEAI passivation layer;

[0091] Step 6: Preparation of the electron transport layer:

[0092] Scheme A: Dissolve [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in chlorobenzene to prepare a solution with a concentration of 10-30 mg / mL, then spin-coat the [6,6]-phenyl C61 butyric acid methyl ester chlorobenzene solution on the PEAI passivation layer at a spin speed of 1000-3000 rpm for 20-60 seconds with an acceleration of 1000-2000 rpm / s to form a PCBM electron transport layer;

[0093] Scheme B: Directly deposit a fullerene (C -4 ) film on the PEAI passivation layer by thermal evaporation under a vacuum pressure of less than 5 x 10 60 Pa at a deposition rate of 0.5-2.0 Å / s to form a 20-60 nm C 60 electron transport layer;

[0094] Step 7: Deposition of the charge buffer layer:

[0095] Scheme A: Dissolve bathocuproin (BCP) in isopropanol to obtain a solution with a concentration of 0.5-1.0 mg / mL, then spin-coat 100-200 μL of the solution on the electron transport layer at a spin speed of 3000-5000 rpm for 20-40 seconds with an acceleration of 2000-3000 rpm / s to form a BCP charge buffer layer;

[0096] Scheme B: Evaporate 5-10 nm of bathocuproin (BCP) on the electron transport layer under vacuum conditions to form a BCP charge buffer layer;

[0097] Step 8: Deposition of the metal electrode:

[0098] Deposition of a 50-150 nm metal electrode on the charge buffer layer formed in Step 7 by thermal evaporation, wherein the material of the metal electrode is selected from Ag, Au, Al or Cu.

[0099] In order for those skilled in the art to better understand the technical solutions of the present application, the present application will be further described in detail below with reference to the specific embodiments.

[0100] Example 1

[0101] The embodiment provides a preparation method of a perovskite solar cell, which has a structure from bottom to top as follows: conductive glass (ITO), a hole transport layer (MeO-4PACz), a wide-bandgap perovskite light-absorbing layer, an OAmI passivation layer, a PEAI passivation layer, an electron transport layer (PCBM), a charge buffer layer (BCP), and a metal electrode (Ag), wherein the concentration of the OAmI is 0.5 mg / mL, and the concentration of the PEAI is 2.0 mg / mL.

[0102] The preparation method of the perovskite solar cell specifically comprises the following steps.

[0103] S1: cleaning the conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially cleaned with a glass cleaner, ultrapure water, acetone and ethanol for 30 min, and then the conductive glass substrate is dried by blowing nitrogen, and then the conductive glass substrate is placed in an ultraviolet ozone cleaning machine for ozone cleaning for 30 min to remove impurities on the surface of the conductive glass substrate and improve wettability;

[0104] S2: preparing the hole transport layer: 60 μL of MeO-4PACz solution (solvent: ethanol) with a concentration of 1.0 mg / mL is spin-coated on the conductive glass substrate cleaned in the above step, and the spin-coating parameters are as follows: rotation speed 3000 rpm, spin-coating time 30 s, and acceleration 3000 rpm / s; after spin-coating, the conductive glass substrate is placed on a hot stage at 100 ℃ for annealing for 10 min;

[0105] S3: preparing the wide-bandgap perovskite light-absorbing layer: methanamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidinium iodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg and lead iodide (PbI2) 487.10 mg are weighed, then 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO) are added, and the mixture is stirred on a stirrer for 2 hours until complete dissolution to obtain a wide-bandgap perovskite precursor solution; then 60 μL of the wide-bandgap perovskite precursor solution is spin-coated on the hole transport layer, and the spin-coating parameters are as follows: rotation speed 3000 rpm, spin-coating time 40 s, and acceleration 2000 rpm / s; 150 μL of chlorobenzene (CB) is added as an anti-solvent at the 10th second, and then annealing is performed at 110 ℃ for 15 min;

[0106] S4: preparing the OAmI passivation layer: an OAmI isopropanol solution with a concentration of 0.5 mg / mL is prepared, and then 50 μL of the solution is spin-coated on the wide-bandgap perovskite light-absorbing layer prepared in the above step, and the spin-coating parameters are as follows: rotation speed 4000 rpm, spin-coating time 30 s, and acceleration 4000 rpm / s; after spin-coating, annealing is performed at 100 ℃ for 10 min;

[0107] S5: Preparation of PEAI passivation layer: 2.0 mg / mL PEAI isopropanol solution was prepared, and then 50 μL of the solution was spin-coated on the OAmI passivation layer prepared in the above step, with the spin-coating parameters being 4000 rpm, 30 s, 4000 rpm / s, and 100°C annealing for 10 min after spin-coating;

[0108] S6: Preparation of electron transport layer: 40 μL of PCBM solution (concentration: 20 mg / mL, solvent: chlorobenzene) was spin-coated on the PEAI passivation layer, with the spin-coating parameters being 2000 rpm, 30 s, and 2000 rpm / s;

[0109] S7: Preparation of charge buffer layer: 150 μL of BCP isopropanol solution (concentration: 0.5 mg / mL) was spin-coated, with the spin-coating parameters being 5000 rpm, 30 s, and 2000 rpm / s;

[0110] S8: Preparation of metal electrode: a silver metal electrode with a thickness of 100 nm was evaporated on the charge buffer layer.

[0111] Test results:

[0112] Referring to Figure 2 , the device has a photoelectric conversion efficiency of 22.01% (short-circuit current density: 21.55 mA / cm 2 , open-circuit voltage: 1.220 V, and fill factor: 83.74%);

[0113] Referring to Figure 3 , the efficiency is maintained at 84.5% after 500 hours of light aging under a nitrogen atmosphere.

[0114] Example 2

[0115] This example provides a preparation method of a perovskite solar cell, which has a structure from bottom to top as follows: conductive glass (ITO), hole transport layer (MeO-4PACz), wide-bandgap perovskite light-absorbing layer, OAmI passivation layer, PEAI passivation layer, electron transport layer (PCBM), charge buffer layer (BCP), and metal electrode (Ag), wherein the concentration of OAmI is 1.0 mg / mL, and the concentration of PEAI is 2.0 mg / mL.

[0116] The preparation method of the perovskite solar cell specifically includes the following steps:

[0117] S1: clean the conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially cleaned with glass cleaner, ultrapure water, acetone, ethanol for 30 min, then the conductive glass substrate is dried by nitrogen blowing, and then the conductive glass substrate is placed in a ultraviolet ozone cleaning machine for ozone cleaning for 30 min, to remove the impurities on the surface of the conductive glass substrate and improve the wettability;

[0118] S2: prepare the hole transport layer: spin 60 μL of MeO-4PACz solution (concentration of 1.0 mg / mL, solvent is ethanol) on the conductive glass substrate cleaned in the above step, the spin coating parameters are rotation speed of 3000 rpm, spin coating time of 30 s, acceleration of 3000 rpm / s, and after spin coating, the conductive glass substrate is placed on a hot stage at 100℃ for annealing for 10 min;

[0119] S3: prepare the wide band gap perovskite light absorbing layer: weigh methanamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidine hydroiodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg, and lead iodide (PbI2) 487.10 mg, then add 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO), and stir on a stirrer for 2 hours until completely dissolved to obtain a wide band gap perovskite precursor solution, then spin 60 μL of the wide band gap perovskite precursor solution on the hole transport layer, the spin coating parameters are rotation speed of 3000 rpm, spin coating time of 40 s, acceleration of 2000 rpm / s, drop 150 μL of chlorobenzene (CB) as anti-solvent at the 10th second, and then anneal at 110℃ for 15 min;

[0120] S4: prepare the OAmI passivation layer: prepare a 1.0 mg / mL OAmI isopropanol solution, then spin 50 μL of the solution on the wide band gap perovskite light absorbing layer prepared in the above step, the spin coating parameters are rotation speed of 4000 rpm, spin coating time of 30 s, acceleration of 4000 rpm / s, and after spin coating, anneal at 100℃ for 10 min;

[0121] S5: prepare the PEAI passivation layer: prepare a 2.0 mg / mL PEAI isopropanol solution, then spin 50 μL of the solution on the OAmI passivation layer prepared in the above step, the spin coating parameters are rotation speed of 4000 rpm, spin coating time of 30 s, acceleration of 4000 rpm / s, and after spin coating, anneal at 100℃ for 10 min;

[0122] S6: prepare the electron transport layer: spin 40 μL of PCBM solution (concentration of 20 mg / mL, solvent is chlorobenzene) on the PEAI passivation layer, the spin coating parameters are rotation speed of 2000 rpm, time of 30 s, and acceleration of 2000 rpm / s.

[0123] S7: preparing charge buffer layer: spin-coating 150 μL of BCP isopropanol solution with a concentration of 0.5 mg / mL, spin-coating parameters: rotation speed 5000 rpm, time 30 s, acceleration 2000 rpm / s;

[0124] S8: preparing metal electrode: evaporating silver metal electrode on the charge buffer layer, thickness 100 nm.

[0125] Test results:

[0126] Referring to Figure 4 , the photoelectric conversion efficiency of the device is 22.54% (short-circuit current density 21.53 mA / cm 2 , open-circuit voltage 1.242 V, fill factor 84.29%);

[0127] Referring to Figure 5 , under a nitrogen atmosphere, a solar LED light aging for 500 hours, the efficiency remains 86.4%.

[0128] Example 3

[0129] The embodiment provides a preparation method of a perovskite solar cell, which has a structure from bottom to top: conductive glass (ITO), hole transport layer (MeO-4PACz), wide-bandgap perovskite light-absorbing layer, OAmI passivation layer, PEAI passivation layer, electron transport layer (PCBM), charge buffer layer (BCP), and metal electrode (Ag), wherein the concentration of OAmI is 1.5 mg / mL, and the concentration of PEAI is 2.0 mg / mL.

[0130] The preparation method of the perovskite solar cell specifically comprises the following steps.

[0131] S1: cleaning conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially ultrasonically cleaned with glass cleaner, ultrapure water, acetone and ethanol for 30 min, then the conductive glass substrate is blown dry by nitrogen, and then the conductive glass substrate is placed in an ultraviolet ozone cleaning machine for ozone cleaning for 30 min, so as to remove impurities on the surface of the conductive glass substrate and improve wettability;

[0132] S2: preparing hole transport layer: spin-coating 60 μL of MeO-4PACz solution (solvent: ethanol) with a concentration of 1.0 mg / mL on the conductive glass substrate cleaned in the above step, spin-coating parameters: rotation speed 3000 rpm, spin-coating time 30 s, acceleration 3000 rpm / s, after spin-coating, the conductive glass substrate is placed on a hot stage for annealing at 100 ℃ for 10 min;

[0133] S3: Preparation of wide band gap perovskite light absorbing layer: take methylamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidinium iodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg, lead iodide (PbI2) 487.10 mg, then add 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO), stir on a stirrer for 2 hours until completely dissolved, to obtain a wide band gap perovskite precursor solution, then take 60 μL of the wide band gap perovskite precursor solution and spin it on the hole transport layer, the spin coating parameters are 3000 rpm, 40 s, 2000 rpm / s, and 150 μL of chlorobenzene (CB) is added as an anti-solvent at the 10th second, then annealed at 110°C for 15 min;

[0134] S4: Preparation of OAmI passivation layer: prepare a 1.5 mg / mL OAmI isopropanol solution, then spin 50 μL of the solution on the wide band gap perovskite light absorbing layer prepared in the above step, the spin coating parameters are 4000 rpm, 30 s, 4000 rpm / s, and 100°C annealing for 10 min after spin coating;

[0135] S5: Preparation of PEAI passivation layer: prepare a 2.0 mg / mL PEAI isopropanol solution, then spin 50 μL of the solution on the OAmI passivation layer prepared in the above step, the spin coating parameters are 4000 rpm, 30 s, 4000 rpm / s, and 100°C annealing for 10 min after spin coating;

[0136] S6: Preparation of electron transport layer: spin 40 μL of PCBM solution (solvent chlorobenzene) with a concentration of 20 mg / mL on the PEAI passivation layer, the spin coating parameters are 2000 rpm, 30 s, and 2000 rpm / s;

[0137] S7: Preparation of charge buffer layer: spin 150 μL of BCP solution (solvent isopropanol) with a concentration of 0.5 mg / mL, the spin coating parameters are 5000 rpm, 30 s, and 2000 rpm / s;

[0138] S8: Preparation of metal electrode: evaporate silver metal electrode on the charge buffer layer with a thickness of 100 nm.

[0139] Test results:

[0140] Reference Figure 6 , the device photoelectric conversion efficiency is 22.16% (short circuit current density 21.48 mA / cm 2 , open circuit voltage 1.233 V, fill factor 83.51%);

[0141] Referring to Figure 7 Under the atmosphere of nitrogen, one solar LED light aging for 500 hours, the efficiency remains 85.7%.

[0142] Embodiment 4

[0143] The embodiment provides a preparation method of a perovskite solar cell, which comprises the following steps in sequence from bottom to top: a conductive glass (ITO), a hole transport layer (MeO-4PACz), a wide-bandgap perovskite light-absorbing layer, an OAmI passivation layer, a PEAI passivation layer, an electron transport layer (PCBM), a charge buffer layer (BCP) and a metal electrode (Ag), wherein the concentration of the OAmI passivation layer is 2.0 mg / mL, and the concentration of the PEAI passivation layer is 2.0 mg / mL.

[0144] The preparation method of the perovskite solar cell comprises the following steps in sequence:

[0145] S1: cleaning the conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially cleaned with a glass cleaner, ultrapure water, acetone and ethanol for 30 min, and then the conductive glass substrate is dried by blowing nitrogen, and then the conductive glass substrate is placed in an ultraviolet ozone cleaning machine for ozone cleaning for 30 min, so as to remove impurities on the surface of the conductive glass substrate and improve wettability;

[0146] S2: preparing the hole transport layer: 60 μL of MeO-4PACz solution (solvent: ethanol) with a concentration of 1.0 mg / mL is spin-coated on the conductive glass substrate cleaned in the above step, and the spin-coating parameters are as follows: rotation speed 3000 rpm, spin-coating time 30 s, acceleration 3000 rpm / s; after spin-coating, the conductive glass substrate is placed on a hot stage for annealing at 100 ℃ for 10 min;

[0147] S3: preparing the wide-bandgap perovskite light-absorbing layer: methanamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidinium iodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg and lead iodide (PbI2) 487.10 mg are weighed, and then 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO) are added, and the mixture is stirred on a stirrer for 2 hours until complete dissolution, so as to obtain a wide-bandgap perovskite precursor solution; then 60 μL of the wide-bandgap perovskite precursor solution is spin-coated on the hole transport layer, and the spin-coating parameters are as follows: rotation speed 3000 rpm, spin-coating time 40 s, acceleration 2000 rpm / s; 150 μL of chlorobenzene (CB) is added as an anti-solvent at the 10th second; and then the mixture is annealed at 110 ℃ for 15 min;

[0148] S4: Preparation of OAmI passivation layer: 2.0 mg / mL OAmI isopropanol solution was prepared, and then 50 μL of the solution was spin-coated on the wide-bandgap perovskite light-absorbing layer prepared in the above step, with the spin-coating parameters being a rotation speed of 4000 rpm, a spin-coating time of 30 s, an acceleration of 4000 rpm / s, and an annealing at 100 ℃ for 10 min after spin-coating;

[0149] S5: Preparation of PEAI passivation layer: 2.0 mg / mL PEAI isopropanol solution was prepared, and then 50 μL of the solution was spin-coated on the OAmI passivation layer prepared in the above step, with the spin-coating parameters being a rotation speed of 4000 rpm, a spin-coating time of 30 s, an acceleration of 4000 rpm / s, and an annealing at 100 ℃ for 10 min after spin-coating;

[0150] S6: Preparation of electron transport layer: 40 μL of PCBM solution (solvent: chlorobenzene) with a concentration of 20 mg / mL was spin-coated on the PEAI passivation layer, with the spin-coating parameters being a rotation speed of 2000 rpm, a time of 30 s, and an acceleration of 2000 rpm / s;

[0151] S7: Preparation of charge buffer layer: 150 μL of BCP solution (solvent: isopropanol) with a concentration of 0.5 mg / mL was spin-coated, with the spin-coating parameters being a rotation speed of 5000 rpm, a time of 30 s, and an acceleration of 2000 rpm / s;

[0152] S8: Preparation of metal electrode: a silver metal electrode with a thickness of 100 nm was evaporated on the charge buffer layer.

[0153] Test results:

[0154] Reference Figure 8 , the photoelectric conversion efficiency of the device was 21.53% (short-circuit current density 21.38 mA / cm 2 , open-circuit voltage 1.207 V, fill factor 83.42%);

[0155] Reference Figure 9 After 500 hours of light aging in a nitrogen atmosphere, the efficiency was maintained at 84.1%.

[0156] Comparative Example 1

[0157] The present embodiment provides a preparation method of a perovskite solar cell, which has the following structure from bottom to top: conductive glass (ITO), hole transport layer (MeO-4PACz), wide-bandgap perovskite light-absorbing layer, PEAI passivation layer, electron transport layer (PCBM), charge buffer layer (BCP), and metal electrode (Ag), without using OAmI for modification, and the PEAI concentration is 2.0 mg / mL.

[0158] The preparation method of the perovskite solar cell specifically comprises:

[0159] S1: cleaning the conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially cleaned with a glass cleaner, ultrapure water, acetone, and ethanol for 30 min, and then the conductive glass substrate is dried by blowing nitrogen, and then the conductive glass substrate is placed in a ultraviolet ozone cleaning machine for ozone cleaning for 30 min to remove impurities on the surface of the conductive glass substrate and improve the wettability;

[0160] S2: preparing a hole transport layer: 60 μL of MeO-4PACz solution (solvent: ethanol) with a concentration of 1.0 mg / mL is spin-coated on the conductive glass substrate cleaned in the above step, and the spin-coating parameters are a rotation speed of 3000 rpm, a spin-coating time of 30 s, and an acceleration of 3000 rpm / s. After spin-coating, the conductive glass substrate is placed on a hot stage at 100°C for annealing for 10 min;

[0161] S3: preparing a wide-bandgap perovskite light-absorbing layer: methanamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidinium iodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg, and lead iodide (PbI2) 487.10 mg are weighed, and then 800 μL of N,N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO) are added, and the mixture is stirred on a stirrer for 2 hours until completely dissolved to obtain a wide-bandgap perovskite precursor solution. Then, 60 μL of the wide-bandgap perovskite precursor solution is spin-coated on the hole transport layer, and the spin-coating parameters are a rotation speed of 3000 rpm, a spin-coating time of 40 s, and an acceleration of 2000 rpm / s. At 10 seconds before the end of the spin-coating, 150 μL of chlorobenzene (CB) is added as an anti-solvent, and then the mixture is annealed at 110°C for 15 min;

[0162] S4: preparing a PEAI passivation layer: a PEAI isopropanol solution with a concentration of 2.0 mg / mL is prepared, and then 50 μL of the solution is spin-coated on the wide-bandgap perovskite light-absorbing layer prepared in the above step, and the spin-coating parameters are a rotation speed of 4000 rpm, a spin-coating time of 30 s, and an acceleration of 4000 rpm / s. After spin-coating, the mixture is annealed at 100°C for 10 min;

[0163] S5: preparing an electron transport layer: 40 μL of PCBM solution (solvent: chlorobenzene) with a concentration of 20 mg / mL is spin-coated on the PEAI passivation layer, and the spin-coating parameters are a rotation speed of 2000 rpm, a time of 30 s, and an acceleration of 2000 rpm / s;

[0164] S6: preparing a charge buffer layer: 150 μL of BCP solution (solvent: isopropanol) with a concentration of 0.5 mg / mL is spin-coated, and the spin-coating parameters are a rotation speed of 5000 rpm, a time of 30 s, and an acceleration of 2000 rpm / s;

[0165] S7: Preparing metal electrode: evaporating silver metal electrode on the charge buffer layer, thickness is 100 nm.

[0166] Test results:

[0167] Referring to Figure 10 , the photoelectric conversion efficiency of the device is 20.83% (short-circuit current density 21.28 mA / cm 2 , open-circuit voltage 1.196 V, fill factor 81.85%);

[0168] Referring to Figure 11 , under the illumination of a sunlight LED for 200 hours in a nitrogen atmosphere, the efficiency remains 60%.

[0169] Comparative Example 2

[0170] The embodiment provides a preparation method of a perovskite solar cell, which has the structure of conductive glass (ITO), a hole transport layer (MeO-4PACz), a wide-bandgap perovskite light-absorbing layer, an OAmI passivation layer, an electron transport layer (PCBM), a charge buffer layer (BCP) and a metal electrode (Ag) from bottom to top, and PEAI is not used for modification, and the OAmI concentration is 1.0 mg / mL.

[0171] The preparation method of the perovskite solar cell specifically comprises the following steps.

[0172] S1: cleaning conductive glass: the conductive glass substrate of indium tin oxide (ITO) is sequentially cleaned with a glass cleaner, ultrapure water, acetone and ethanol for 30 min, and then the conductive glass substrate is dried by blowing nitrogen, and then the conductive glass substrate is placed in an ultraviolet ozone cleaning machine for ozone cleaning for 30 min, so as to remove impurities on the surface of the conductive glass substrate and improve wettability;

[0173] S2: preparing a hole transport layer: 60 μL of MeO-4PACz solution (solvent is ethanol) with a concentration of 1.0 mg / mL is spin-coated on the conductive glass substrate cleaned in the above step, the spin-coating parameters are a rotation speed of 3000 rpm, a spin-coating time of 30 s and an acceleration of 3000 rpm / s, and after spin-coating, the conductive glass substrate is placed on a hot stage for annealing at 100 ℃ for 10 min;

[0174] S3: Preparation of wide band gap perovskite light absorbing layer: take methanamine hydrobromide (MABr) 25.20 mg, cesium iodide (CsI) 19.50 mg, formamidinium iodide (FAI) 206.40 mg, lead bromide (PbBr2) 165.20 mg, lead iodide (PbI2) 487.10 mg, then add 800 μL of N, N-dimethylformamide (DMF) and 200 μL of dimethyl sulfoxide (DMSO), stir on a stirrer for 2 hours until completely dissolved to obtain a wide band gap perovskite precursor solution, then take 60 μL of the wide band gap perovskite precursor solution and spin-coat it on the hole transport layer, the spin-coating parameters are 3000 rpm of rotation speed, 40 s of spin-coating time, 2000 rpm / s of acceleration, drop 150 μL of chlorobenzene (CB) as anti-solvent at the 10th second, and then anneal at 110°C for 15 min;

[0175] S4: Preparation of OAmI passivation layer: prepare a 1.0 mg / mL OAmI isopropanol solution, then take 50 μL of the solution and spin-coat it on the wide band gap perovskite light absorbing layer prepared in the above step, the spin-coating parameters are 4000 rpm of rotation speed, 30 s of spin-coating time, 4000 rpm / s of acceleration, and 100°C annealing for 10 min after spin-coating;

[0176] S5: Preparation of electron transport layer: spin-coat 40 μL of PCBM solution (concentration is 20 mg / mL, solvent is chlorobenzene) on the OAmI passivation layer, the spin-coating parameters are 2000 rpm of rotation speed, 30 s of time, and 2000 rpm / s of acceleration;

[0177] S6: Preparation of charge buffer layer: spin-coat 150 μL of BCP solution (concentration is 0.5 mg / mL, solvent is isopropanol), the spin-coating parameters are 5000 rpm of rotation speed, 30 s of time, and 2000 rpm / s of acceleration;

[0178] S7: Preparation of metal electrode: evaporate silver metal electrode on the charge buffer layer, the thickness is 100 nm.

[0179] Test results:

[0180] Referring to Figure 12 , the photoelectric conversion efficiency of the device is 16.64% (short-circuit current density 20.16 mA / cm 2 , open-circuit voltage 1.164 V, fill factor 70.90%);

[0181] Referring to Figure 13 , under the nitrogen atmosphere, one solar LED light aging for 200 hours, the efficiency remains 68%.

[0182] The above research results show that the OAmI / PEAI double-layer interface passivation strategy developed by the application can simultaneously improve the photoelectric conversion efficiency and long-term stability of a wide-bandgap perovskite solar cell. The OAmI layer anchors the grain boundary through a long alkyl chain to inhibit ion migration, and the two-dimensional perovskite layer generated in-situ by the PEAI optimizes the band alignment, thereby achieving synergistic passivation of deep-shallow energy level defects. In the light aging test, the optimized device still maintains 86.4% of the initial efficiency after 500 hours, significantly surpassing the single-layer passivation system, and showing the potential for large-scale production.

[0183] The above-mentioned is only the preferred experimental example of the application, and is not used to limit the application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall be included in the protection scope of the application.

Claims

1. A wide-bandgap perovskite solar cell based on bilayer interface passivation, characterized in that, It includes a conductive substrate, a hole transport layer, a wide-bandgap perovskite light-absorbing layer, a dual-interface passivation layer, an electron transport layer, a charge buffer layer, and a metal electrode, which are stacked sequentially. The dual-interface passivation layer includes an OAmI passivation layer and a PEAI passivation layer. The OAmI passivation layer directly covers the surface of the wide-bandgap perovskite light-absorbing layer and the grain boundaries, and is used to passivate interface and grain boundary defects and block ion migration. The PEAI passivation layer covers the OAmI passivation layer and is used to further passivate defects and optimize band alignment. The hole transport layer material is selected from organic monolayers or polymers; The wide-bandgap perovskite light-absorbing layer material is selected from cesium iodide (CsI), lead bromide (PbBr2), methylamine hydrobromide (MABr), formamidinium hydroiodide (FAI), or lead iodide (PbI2). The electron transport layer material is selected from methyl [6,6]-phenyl C61-butyrate (PCBM) or fullerene (C 60 ); The material of the metal electrode is selected from Ag, Au, Al or Cu.

2. A wide-bandgap perovskite solar cell based on bilayer interface passivation as described in claim 1, characterized in that: The Chinese name of the OAmI is 9-octadecenyl iodide, and its structural formula is: ； The Chinese name for PEAI is phenylethyl iodide, and its structural formula is: ； The organic monolayer is selected from (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid (MeO-2PACz), [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz) or (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz); The polymer is selected from poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).

3. A method for fabricating a wide-bandgap perovskite solar cell based on a double-layer interface passivation as described in claims 1-2, characterized in that, For bromine-iodine mixed perovskites with a band gap of 1.65-1.85 eV, the specific steps include: Step 1: Conductive substrate treatment; Step 2: Spin-coat the hole transport layer material solution onto the conductive substrate treated in Step 1, and then anneal it to form a hole transport layer; Step 3: Spin-coat a wide-bandgap perovskite precursor solution onto the hole transport layer formed in step 2. Add an anti-solvent at the end of the spin-coating process to induce crystallization, followed by annealing to form a wide-bandgap perovskite light-absorbing layer. Step 4: Spin-coat OAmI alcohol solution onto the wide-bandgap perovskite light-absorbing layer formed in step 3, and then anneal to form an OAmI passivation layer; Step 5: Spin-coat PEAI alcohol solution onto the OAmI passivation layer formed in step 4, and then anneal to form a PEAI passivation layer; Step 6: Fabricate an electron transport layer on the PEAI passivation layer formed in step 5: Option A: Spin-coat a chlorobenzene solution of [6,6]-phenyl C61 butyrate methyl ester onto the PEAI passivation layer to form a PCBM electron transport layer; Option B: Direct deposition of fullerenes (C) on the PEAI passivation layer using thermal evaporation. 60 ) thin film, forming C 60 Electron transport layer; Step 7: Deposit a charge buffer layer on the electron transport layer formed in Step 6 using a spin-coating method. Option A: Spin-coating a copper bath (BCP) isopropanol solution onto the electron transport layer to form a BCP charge buffer layer; Option B: Under vacuum conditions, copper bath (BCP) is deposited on the electron transport layer to form a BCP charge buffer layer; Step 8: Deposit a metal electrode on the charge buffer layer formed in step 7 using a thermal evaporation method.

4. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The method for preparing the hole transport layer material solution is as follows: when the selected hole transport layer material is an organic monolayer, the hole transport layer material is dissolved in an alcohol solvent to obtain a solution with a concentration of 0.3-1.0 mg / mL; when the selected hole transport layer material is a polymer, the hole transport layer material is dissolved in chlorobenzene to obtain a solution with a concentration of 1.0-3.0 mg / mL. The alcohol solvent includes, but is not limited to, methanol, ethanol, and isopropanol.

5. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The preparation method of the wide-bandgap perovskite precursor solution is as follows: in an inert atmosphere, the wide-bandgap perovskite light-absorbing layer material is dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) to obtain a solution with a concentration of 0.8-2.3M.

6. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The method for preparing the OAmI alcohol solution is as follows: dissolve OAmI in an alcohol solvent to obtain a solution with a concentration of 0.5-2 mg / mL; The alcohol solvent includes, but is not limited to, methanol, ethanol, and isopropanol.

7. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The method for preparing the PEAI alcohol solution is as follows: dissolve PEAI in an alcohol solvent to obtain a solution with a concentration of 0.5-10 mg / mL; The alcohol solvent includes, but is not limited to, methanol, ethanol, and isopropanol.

8. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The preparation method of the [6,6]-phenyl C61 butyrate methyl ester chlorobenzene solution is as follows: [6,6]-phenyl C61 butyrate methyl ester (PCBM) is dissolved in chlorobenzene to obtain a solution with a concentration of 10-30 mg / mL.

9. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that, The preparation method of the copper bath (BCP) isopropanol solution is as follows: dissolve copper bath (BCP) in isopropanol to obtain a solution with a concentration of 0.5-1.0 mg / mL.

10. The method for fabricating a double-layer interface passivated wide-bandgap perovskite solar cell as described in claim 3, characterized in that: The implementation method of step 1 is as follows: the indium tin oxide (ITO) or fluorine-doped SnO2 conductive glass (FTO) substrate is subjected to multi-step ultrasonic cleaning with glass cleaning agent, deionized water and polar solvent in sequence, and after drying, the surface is activated by ultraviolet ozone treatment or plasma treatment. In step 2, the spin coating speed of the hole transport layer material solution is 3000-5000 rpm, the time is 20-40s, the acceleration is 2000-3000 rpm / s, the annealing temperature is 80-150℃, and the time is 10-20min. In step 3, the spin-coating speed of the wide-bandgap perovskite precursor solution is 2000-6000 rpm, the time is 30-40 s, the acceleration is 2000-3000 rpm / s, the annealing temperature is 90-140℃, and the time is 5-30 min. The antisolvent is toluene, chlorobenzene, or ethyl acetate. The thickness of the formed wide-bandgap perovskite light-absorbing layer is 300-800 nm, and the bandgap is 1.65-1.85 eV. In step 4, the spin coating speed of the OAmI alcohol solution is 1500-6000 rpm, the time is 10-60s, the acceleration is 1000-4000 rpm / s, the annealing temperature is 70-120℃, and the time is 5-20min. In step 5, the spin coating speed of the PEAI alcohol solution is 1500-6000 rpm, the time is 10-60s, the acceleration is 1000-4000 rpm / s, the annealing temperature is 60-110℃, and the time is 5-20min. In step 6, in scheme A, the spin coating of the [6,6]-phenyl C61 butyrate chlorobenzene solution is performed at a rotation speed of 1000-3000 rpm for 20-60 s with an acceleration of 1000-2000 rpm / s; in scheme B, the vacuum pressure is less than 5 × 10⁻⁶ rpm. -4 Under Pa conditions, deposition of C was carried out. 60 The film's velocity is 0.5–2.0 Å / s, forming C 60 The electron transport layer thickness is 20-60 nm; In step 7, in scheme A, the spin-coating speed of the copper oxychloride (BCP) isopropanol solution is 3000-5000 rpm, the time is 20-40 s, and the acceleration is 2000-3000 rpm / s; in scheme B, the thickness of the copper oxychloride (BCP) layer is 5-10 nm. In step 8, the thickness of the deposited metal electrode is 50-150 nm.

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