Gasification apparatus for substrate processing apparatus and substrate processing apparatus

Abstract

The present invention relates to a gasification apparatus for a substrate processing apparatus and a substrate processing apparatus, the gasification apparatus for a substrate processing apparatus comprising: a first inflow unit to which a liquid or solid precursor and a first carrier gas are supplied; a diffusion unit including a diffusion space wider than the first inflow unit, and in which the precursor diffuses; a second inflow unit connected to the diffusion unit and supplied with a second carrier gas assisting diffusion of the precursor; and the gasification unit is connected with the diffusion unit so as to gasify the diffused precursor.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus that performs a processing process such as a deposition process and an etching process on a substrate. BACKGROUND

[0002] Generally, a thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate for manufacturing a solar cell, a semiconductor device, a flat panel display apparatus, or the like. To this end, a processing process is performed on the substrate, and examples of the processing process include a deposition process of depositing a thin film including a specific material on the substrate, a light process of selectively exposing a portion of the thin film by using a photosensitive material, an etching process of removing the selectively exposed portion of the thin film, and the like. Such a processing process on the substrate can be performed by a substrate processing apparatus.

[0003] A substrate processing apparatus according to the related art includes a substrate processing unit that performs a processing process on a substrate, and a supply unit that supplies a source gas to the substrate processing unit. The supply unit includes a vaporizer that vaporizes a precursor. The supply unit vaporizes the precursor by using the vaporizer to generate the source gas, and then supplies the source gas to the substrate processing unit. The substrate processing unit performs the processing process by using the source gas supplied from the supply unit.

[0004] In the substrate processing apparatus according to the related art, the vaporizer simultaneously performs vaporization-assisting carrier gas mixing and heat energy supply to vaporize the precursor. Therefore, in the related art, since viscosity increases due to heat generated in the process of vaporizing the precursor, clogging occurs, and thus there is a problem in that the supply of the source gas cannot be smoothly performed. This problem is more serious in the case of using a precursor having high viscosity. SUMMARY

[0005] PROBLEMS TO BE SOLVED BY THE INVENTION The present application aims to solve the above problems and aims to provide a vaporization apparatus for a substrate processing apparatus and a substrate processing apparatus that can prevent the occurrence of clogging due to an increase in viscosity in a process of vaporizing a precursor.

[0006] TECHNICAL SOLUTION To achieve the above object, the present application can include the following elements.

[0007] The vaporization apparatus for a substrate processing apparatus according to the present application can be used to vaporize a liquid or solid precursor to supply it to a substrate in a gaseous state, and can include a first inflow unit to which a precursor and a first carrier gas are supplied, a diffusion unit including a diffusion space wider than the first inflow unit, and in which the precursor is diffused, a second inflow unit connected to the diffusion unit and to which a second carrier gas assisting the diffusion of the precursor is supplied, and a vaporization unit connected to the diffusion unit to vaporize the diffused precursor.

[0008] In the vaporization apparatus for a substrate processing apparatus according to the present invention, the diffusion unit can include a cooling unit for cooling the diffusion space.

[0009] In the vaporization apparatus for a substrate processing apparatus according to the present invention, the diffusion unit can be controlled at a first temperature. The vaporization unit can be controlled at a second temperature. The first temperature can be lower than the second temperature.

[0010] The substrate processing apparatus according to the present invention can include a supply unit supplying a source gas, and a substrate processing unit performing a processing process on a substrate by using the source gas supplied from the supply unit. The supply unit can include a first inflow unit supplied with a precursor and a first carrier gas, a diffusion unit including a diffusion space wider than the first inflow unit, and in which the precursor is diffused, a second inflow unit connected to the diffusion unit and supplied with a second carrier gas for assisting diffusion of the precursor, and a vaporization unit connected to the diffusion unit to vaporize the diffused precursor.

[0011] In the substrate processing apparatus according to the present invention, the diffusion unit can include a cooling unit for cooling the diffusion space.

[0012] In the substrate processing apparatus according to the present invention, the diffusion unit can be controlled at a first temperature. The vaporization unit can be controlled at a second temperature. The first temperature can be lower than the second temperature.

[0013] Advantageous Effects According to the present invention, the following effects can be achieved.

[0014] The present invention can prevent occurrence of clogging due to viscosity increase in a process of vaporizing a precursor. Accordingly, the present invention can improve stability of vaporization of the precursor and supply of a source gas.

[0015] The present invention can prevent occurrence of clogging even when a source gas is generated by vaporizing a high-viscosity precursor, and thus can perform a processing process by using a high-viscosity precursor. Accordingly, the present invention can improve quality of a substrate on which the processing process has been performed.

[0016] The present invention can prevent occurrence of clogging even when a source gas is generated by vaporizing a high-viscosity precursor, and thus prolongs a maintenance period caused by occurrence of clogging, and can reduce maintenance costs. Accordingly, the present invention can reduce process costs of a processing process, and thus is helpful in reducing manufacturing costs of a substrate on which the processing process has been performed. In addition, the present invention can improve an operation rate to improve productivity of a substrate on which the processing process has been performed.

[0017] The present application can prevent the occurrence of clogging even when source gas is generated by gasifying a high-viscosity precursor, and thus can increase the flow rate of the precursor supplied to the gasification unit to increase the production amount of source gas. Accordingly, the present application can increase the flow rate of source gas supplied to the substrate processing unit, and thus can further improve the quality of a substrate on which a processing process has been performed. In addition, the present application can shorten the time required for a processing process, and thus can further improve the productivity of a substrate on which a processing process has been performed. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is a schematic configuration diagram of a substrate processing apparatus according to the present application.

[0019] Figure 2 is a schematic side cross-sectional view of a gasification apparatus for a substrate processing apparatus according to the present application.

[0020] Figure 3 is an enlarged schematic side cross-sectional view of a first inflow unit and a second inflow unit in a substrate processing apparatus according to the present application.

[0021] Figure 4 is a schematic side cross-sectional view of an ejection unit in a substrate processing apparatus according to the present application.

[0022] Figure 5 is a schematic side cross-sectional view of a variation of an ejection unit in a substrate processing apparatus according to the present application. DETAILED DESCRIPTION

[0023] Hereinafter, an embodiment of a substrate processing apparatus according to the present application will be described in detail with reference to the accompanying drawings. The substrate processing apparatus according to the present application can include a gasification apparatus for a substrate processing apparatus according to the present application, and thus the gasification apparatus will be described together when describing the embodiment of the substrate processing apparatus according to the present application.

[0024] REFERENCE Figure 1 The substrate processing apparatus 1 according to the present application performs a processing process on a substrate S. The substrate S can be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present application can perform a processing process, such as a deposition process of depositing a thin film on the substrate S and an etching process of removing a part of the thin film deposited on the substrate S. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present application performs a deposition process will be mainly described, and based on this embodiment, it will be apparent to those skilled in the art that an embodiment in which the substrate processing apparatus 1 according to the present application performs another processing process, such as an etching process, can be designed.

[0025] The substrate processing apparatus 1 according to the present application can include a supply unit 2 that supplies gas and a substrate processing unit 7 that performs a processing process by using the gas supplied from the supply unit 2.

[0026] Referring to Figure 1 and Figure 2 , the supply unit 2 supplies a gas to the substrate processing unit 7. The supply unit 2 can be connected to the substrate processing unit 7 through a pipe, a hose, or a hole of a gas block. The supply unit 2 can be disposed outside the substrate processing unit 7.

[0027] The supply unit 2 can supply a source gas to the substrate processing unit 7. In this case, the supply unit 2 can include the diffusion unit 3, the vaporization unit 4, and the inflow unit 5. The diffusion unit 3, the vaporization unit 4, and the inflow unit 5 can be implemented as a vaporization apparatus for the substrate processing apparatus according to the present application.

[0028] The supply unit 2 vaporizes a liquid or solid precursor to supply it to the substrate S in a gaseous state. The supply unit 2 can vaporize a liquid or solid precursor to generate a source gas. The precursor can include a source material, and can be in a liquid or solid state. The supply unit 2 can vaporize a liquid or solid precursor to generate a source gas, and then can supply the source gas in a gaseous state to the substrate processing unit 7.

[0029] Referring to Figure 1 and Figure 2 , the diffusion unit 3 diffuses a precursor supplied from the inflow unit 5. The diffusion unit 3 can be connected to the inflow unit 5. The inflow unit 5 can supply a precursor and a first carrier gas, in which case the diffusion unit 3 can diffuse the precursor and the first carrier gas supplied from the inflow unit 5. The first carrier gas is used to transport the precursor, for example, the first carrier gas can include an inert gas. The inflow unit 5 can supply the precursor and the first carrier gas together to the diffusion unit 3, and can supply a second carrier gas to the diffusion unit 3. In this case, the diffusion unit 3 can diffuse the precursor, the first carrier gas, and the second carrier gas supplied from the inflow unit 5. The second carrier gas assists diffusion of the precursor. The second carrier gas can assist diffusion of the precursor, and can simultaneously assist flow of the source gas. The second carrier gas can include an inert gas. For example, the second carrier gas can be argon (Ar). In the diffusion unit 3, the precursor and the second carrier gas can be mixed with each other while being diffused. The second carrier gas can be a vaporization-assisting gas that assists vaporization of the precursor.

[0030] In the diffusion unit 3, the precursor and the second carrier gas can be diffused at a temperature lower than that of the vaporization unit 4. For example, the precursor and the second carrier gas can be diffused in the diffusion unit 3 having a first temperature, and can be vaporized by thermal energy in the vaporization unit 4 having a second temperature, and thus can be generated as a source gas. In this case, the first temperature can be lower than the second temperature. The diffusion unit 3 can be controlled at the first temperature. The vaporization unit can be controlled at the second temperature.

[0031] As described above, the substrate processing apparatus 1 according to the present application is implemented so that the precursor and the second carrier gas are diffused at a relatively low temperature in the diffusion unit 3, and then are vaporized at a relatively high temperature in the vaporization unit 4, thus generating the source gas. That is, the substrate processing apparatus 1 according to the present application is implemented so that the diffusion of the precursor and the vaporization of the precursor due to thermal energy are sequentially performed in spaces spaced apart from each other. The substrate processing apparatus 1 according to the present application can reduce an increase in viscosity occurring in a process of vaporizing the precursor, thus preventing the occurrence of clogging due to the increase in viscosity. Therefore, the substrate processing apparatus 1 according to the present application is implemented so that the vaporization of the precursor and the supply of the source gas are smoothly performed. Thus, the substrate processing apparatus 1 according to the present application can achieve the following effects.

[0032] First, the substrate processing apparatus 1 according to the present application can prevent the occurrence of clogging even when the source gas is generated by vaporizing the precursor having a high viscosity, thus enabling the processing process to be performed by using the precursor having a high viscosity. Therefore, the substrate processing apparatus 1 according to the present application can improve the quality of the substrate S on which the processing process has been performed. For example, the substrate processing apparatus 1 according to the present application can generate the source gas by using the precursor having a high viscosity higher than 10 Centi Poise (CP), and can perform the processing process by using the generated source gas.

[0033] Second, the substrate processing apparatus 1 according to the present application can prevent the occurrence of clogging even when the source gas is generated by vaporizing the precursor having a high viscosity, thus prolonging a maintenance period due to the occurrence of clogging and also reducing maintenance costs. Therefore, the substrate processing apparatus 1 according to the present application can reduce the process cost of the processing process, thus contributing to the reduction of manufacturing costs of the substrate S on which the processing process has been performed. In addition, the substrate processing apparatus 1 according to the present application can improve the operation rate to improve the productivity of the substrate S on which the processing process has been performed.

[0034] Third, the substrate processing apparatus 1 according to the present application can prevent the occurrence of clogging even when the source gas is generated by vaporizing the precursor having a high viscosity, thus enabling the flow rate of the precursor supplied to the diffusion unit 3 to be increased, thereby increasing the production amount of the source gas. Therefore, the substrate processing apparatus 1 according to the present application can increase the flow rate of the source gas supplied to the substrate processing unit 7, thus further improving the quality of the substrate S on which the processing process has been performed. In addition, the substrate processing apparatus 1 according to the present application can shorten the time required in the processing process, thus further improving the productivity of the substrate S on which the processing process has been performed.

[0035] Referring to Figure 1 and Figure 2 , the diffusion unit 3 can include a diffusion space 30.

[0036] Diffusion of the precursor can be performed in the diffusion space 30. The diffusion space 30 can be formed wider than the first inflow unit 51 included in the inflow unit 5. The first inflow unit 51 supplies the precursor and the first carrier gas. Since the diffusion space 30 is formed wider than the first inflow unit 51, the precursor and the first carrier gas can be widely diffused when being supplied from the first inflow unit 51 to the diffusion space 30. Accordingly, the precursor can be smoothly mixed with the second carrier gas while being widely diffused in the diffusion space 30.

[0037] Referring to Figure 1 and Figure 2 , the diffusion unit 3 can include a diffusion body 31.

[0038] The diffusion body 31 provides the diffusion space 30. The diffusion body 31 can be adjusted at a first temperature. Accordingly, in the diffusion space 30, diffusion and mixing of the precursor and the second carrier gas can be performed in a state of the first temperature. The first temperature can be a temperature range in which the precursor does not be gasified by heat and the precursor does not be condensed in the diffusion space 30. The first temperature can be previously set by a worker through a preliminary experiment. Accordingly, the substrate processing apparatus 1 according to the present disclosure can reduce an increase in viscosity occurring in a process of diffusing the precursor and the second carrier gas in the diffusion space 30, and thus can prevent occurrence of clogging due to the increase in viscosity.

[0039] The diffusion body 31 can be formed in a cylindrical shape in which an inside is completely hollow, but is not limited thereto, and can be formed in other shapes such as a cuboid shape capable of providing the diffusion space 30 in which diffusion of the precursor and the second carrier gas can be performed and an inside is hollow.

[0040] Referring to Figure 1 and Figure 2 , the diffusion unit 3 can include a cooling unit 32.

[0041] The cooling unit 32 is coupled to the diffusion body 31. The cooling unit 32 can cool the diffusion space 30. Accordingly, even when heat generated in a process of being gasified based on thermal energy in the gasification unit 4 is transferred to the diffusion unit 3, the cooling unit 32 can cool the diffusion space 30, and thus can prevent gasification based on heat in the diffusion space 30. Accordingly, the cooling unit 32 can reduce an increase in viscosity occurring in a process of diffusing and mixing the precursor and the second carrier gas in the diffusion space 30. The cooling unit 32 can cool the diffusion space 30, and thus can maintain the diffusion space 30 at the first temperature.

[0042] The cooling unit 32 can include a heat sink 32a. The heat sink 32a can be coupled to the outer surface of the diffusion body 31. Accordingly, the heat sink 32a dissipates the heat generated in the diffusion unit 3 and the heat transferred from the vaporization unit 4, and thus can cool the diffusion space 30. An air cooling path can be applied to the heat sink 32a. The heat sink 32a can be coupled to the entire outer surface of the diffusion body 31. Accordingly, the heat sink 32a can prevent vaporization based on heat before the precursor in the diffusion space 30 reaches the vaporization unit 4.

[0043] Referring to Figure 1 and Figure 2 , the vaporization unit 4 vaporizes the precursor by using thermal energy. The vaporization unit 4 can be connected with the diffusion unit 3. Accordingly, the precursor diffused in the diffusion unit 3 can be supplied to the vaporization unit 4 and can be vaporized by the thermal energy. The vaporization based on heat can be performed in the vaporization unit 4 at a temperature higher than that of the diffusion unit 3. For example, the precursor and the second carrier gas can be diffused in the diffusion unit 3 having a first temperature and then can be vaporized by the thermal energy in the vaporization unit 4 having a second temperature, and thus the source gas can be generated. In this case, the second temperature can be higher than the first temperature.

[0044] As described above, the substrate processing apparatus 1 according to the present application can be implemented so that the diffusion of the precursor is performed in the diffusion unit 3 and then the vaporization of the precursor by the thermal energy is performed in the vaporization unit 4. Accordingly, the substrate processing apparatus 1 according to the present application can reduce the increase in viscosity occurring in the process of vaporizing the precursor, and thus can prevent the occurrence of the clogging due to the increase in viscosity. Accordingly, the substrate processing apparatus 1 according to the present application is implemented so that the vaporization of the precursor and the supply of the source gas are smoothly performed.

[0045] The vaporization unit 4 can include a vaporization body 41 and a heating unit 42.

[0046] The vaporization body 41 provides a vaporization space 40. The precursor can be vaporized by the thermal energy in the vaporization space 40. The source gas can be generated by the vaporization of the precursor in the vaporization space 40. The vaporization of the precursor can be performed in a state in which the vaporization space 40 has a second temperature. The second temperature can be a temperature range in which the precursor is vaporized by the heat in the vaporization space 40. The second temperature can be previously set by a worker through a preliminary test.

[0047] The vaporization body 41 can be coupled to the diffusion body 31. In this case, the vaporization space 40 and the diffusion space 30 can be connected with each other. The vaporization body 41 and the diffusion body 31 can be formed in one body. The vaporization body 41 can be formed in a cylindrical shape in which the inside is completely hollow, but is not limited thereto, and can be formed in other shapes, such as a cuboid shape capable of providing the vaporization space 40 in which the inside is hollow and the vaporization of the precursor is performed.

[0048] The heating unit 42 is combined to the vaporization main body 41. The heating unit 42 can heat the vaporization space 40. Accordingly, the heating unit 42 can heat the vaporization space 40 to provide heat energy, thus enabling the precursor to be vaporized by heat in the vaporization space 40. The heating unit 42 can heat the vaporization space 40, thus can maintain the vaporization space 40 at the second temperature.

[0049] The heating unit 42 can include a first heater 322a.

[0050] The first heater 322a is disposed at the side wall of the vaporization main body 41. The first heater 322a can emit heat at the side wall of the vaporization main body 41, thus can heat the vaporization space 40. The first heater 322a can be disposed to surround the vaporization space 40. Accordingly, the first heater 322a can be implemented to emit uniform heat in the vaporization space 40 as a whole, thus can heat the vaporization space 40 as a whole at a uniform temperature. The first heater 322a can be disposed to be embedded in the side wall of the vaporization main body 41. The first heater 322a can heat the vaporization space 40 by heat emission, heating light emission, and heating medium circulation using power.

[0051] The second heater 332b is disposed in the vaporization space 40 located in the inside of the vaporization main body 41. The second heater 332b can emit heat in the vaporization main body 41, thus can heat the vaporization space 40. Accordingly, the vaporization space 40 can be heated by the first heater 322a disposed at the outside and the second heater 332b disposed at the inside. Accordingly, the heating unit 42 can improve uniformity of the temperature of the vaporization space 40, thus can improve the quality of the source gas vaporized by heat energy. The second heater 332b can heat the vaporization space 40 by heat emission, heating light emission, and heating medium circulation using power.

[0052] The second heater 332b can be disposed at the center of the vaporization space 40. Accordingly, the second heater 332b can be disposed to emit uniform heat in the vaporization space 40 as a whole. For example, in the case in which the vaporization space 40 is formed in a cylindrical shape as a whole, the second heater 332b can be disposed on a virtual line connecting the centers of the circles constituting the lower surface and the upper surface of the cylinder to each other. One side of the second heater 332b can be coupled to the bottom surface of the vaporization body 41, and the other side thereof can be disposed at a position spaced apart from the bottom surface of the vaporization body 41. The other side of the second heater 332b can be disposed at a position spaced apart from the upper surface of the vaporization body 41. The upper surface of the vaporization body 41 can be a portion connected to the diffusion body 31. Accordingly, the vaporization body 41 can be disposed not to hinder the diffusion of the precursor from the diffusion body 31. The other side of the second heater 332b can be disposed to be spaced apart from the upper surface of the vaporization body 41 at a shorter distance than the bottom surface of the vaporization body 41.

[0053] The supply unit 2 can include a discharge portion 10. The discharge portion 10 can be coupled to the vaporization body 41. One side of the discharge portion 10 can be connected to the vaporization space 40. The other side of the discharge portion 10 can be connected to the substrate processing unit 7. Accordingly, the source gas generated by the vaporization of the precursor in the vaporization space 40 can be supplied to the substrate processing unit 7 through the discharge portion 10. The other side of the discharge portion 10 can be connected to the substrate processing unit 7 through a pipe, a hose, or a hole of a gas block.

[0054] Referring to Figures 1 to 3 The inflow unit 5 supplies the precursor, the first carrier gas, and the second carrier gas to the diffusion unit 3. The inflow unit 5 can be coupled to the diffusion unit 3. Since the precursor and the second carrier gas are diffused in the diffusion unit 3 at a temperature lower than that of the vaporization unit 4, an increase in viscosity can be reduced, and thus the inflow unit 5 can supply a high-viscosity precursor to the diffusion unit 3.

[0055] The inflow unit 5 can be coupled to the diffusion body 31 to be connected to the diffusion space 30. The diffusion body 31 can be disposed between the inflow unit 5 and the vaporization body 41. In the case in which the vaporization body 41 is coupled to the lower portion of the diffusion body 31, the inflow unit 5 can be coupled to the upper portion of the diffusion body 31.

[0056] The inflow unit 5 can include a first inflow unit 51 and a second inflow unit 52.

[0057] The first inflow unit 51 can supply the precursor and the first carrier gas. The precursor and the first carrier gas can be supplied to the diffusion unit 3 through the first inflow unit 51. The diffusion unit 3 can include a diffusion space 30 wider than the first inflow unit 51. Accordingly, the substrate processing apparatus 1 according to the present application can further increase a diffusion force of the precursor in the diffusion unit 3. In this case, a mixing ratio between the precursor and the second carrier gas in the diffusion unit 3 can be increased.

[0058] The first inflow unit 51 can be connected to the first supply mechanism 21. The first supply mechanism 21 supplies the precursor and the first carrier gas. The first supply mechanism 21 can be connected to the first inflow unit 51 through a pipe, a hose, or a hole of a gas block. Although not shown, the first supply mechanism 21 can include a first storage tank storing the precursor, a first pump supplying the first carrier gas to the first storage tank, and a first valve for selectively supplying the precursor.

[0059] The first inflow unit 51 can supply the precursor having a high viscosity higher than 10 CP to the diffusion unit 3. Even when the precursor having a high viscosity higher than 10 CP is supplied through the first inflow unit 51, the substrate processing apparatus 1 according to the present application can reduce an increase in viscosity occurring in a process of vaporizing the precursor, and thus can prevent the occurrence of clogging, thereby smoothly supplying a source gas generated by the high viscosity precursor to the substrate processing unit 7. Accordingly, the substrate processing apparatus 1 according to the present application can smoothly perform a processing process by using the high viscosity precursor, and thus can further improve the quality of a substrate on which the processing process has been performed, and also can shorten a time required for the processing process, thereby further improving the productivity of the substrate on which the processing process has been performed.

[0060] The second inflow unit 52 can supply the second carrier gas. The second carrier gas can be supplied to the diffusion unit 3 through the second inflow unit 52. The second inflow unit 52 can be connected to the second supply mechanism 22. The second supply mechanism 22 supplies the second carrier gas. The second supply mechanism 22 can be connected to the second inflow unit 52 through a pipe, a hose, or a hole of a gas block. Although not shown, the second supply mechanism 22 can include a second storage tank storing the second carrier gas, a second pump supplying the second carrier gas stored in the second storage tank, and a second valve for selectively supplying the second carrier gas.

[0061] The inflow unit 5 can include a first nozzle body 53 and a second nozzle body 54.

[0062] The first nozzle body 53 is used to supply the precursor and the first carrier gas to the diffusion unit 3. The first nozzle body 53 can include a first supply hole 531. The precursor and the first carrier gas supplied from the first supply mechanism 21 can be supplied to the diffusion space 30 through the first supply hole 531. The first supply hole 531 and the first nozzle body 53 can be included in the first inflow unit 51.

[0063] The second nozzle body 54 is disposed outside the first nozzle body 53 spaced apart from the first nozzle body 53. The second nozzle body 54 can be disposed to surround the first nozzle body 53 at a position spaced apart from the outside of the first nozzle body 53. A space formed by the second nozzle body 54 and the first nozzle body 53 disposed spaced apart from each other can be implemented as a second supply hole 541. The second carrier gas can be supplied to the diffusion unit 3 through the second supply hole 541. In this case, the second carrier gas can be supplied to the inflow unit 5 from the second supply means 22 and then supplied to the diffusion space 30 through the second supply hole 541. Accordingly, the second carrier gas supplied through the second supply hole 541 and the precursor and the first carrier gas supplied through the first supply hole 531 can be mixed with each other when diffusing in the diffusion space 30. In this case, the second supply hole 541 and the first supply hole 531 can be implemented to be spatially separated from each other, and thus it is possible to prevent the second carrier gas from being mixed with the precursor and the first carrier gas until being supplied to the diffusion space 30. The second supply hole 541 and the second nozzle body 54 can be included in the second inflow unit 52.

[0064] Referring to Figure 1 and Figure 2 , the supply unit 2 can include a connection nozzle 6.

[0065] The connection nozzle 6 is disposed between the diffusion unit 3 and the vaporization unit 4. The connection nozzle 6 can separate the diffusion space 30 from the vaporization space 40. Accordingly, diffusion of the precursor and vaporization of the precursor can be performed in spaces spaced apart from each other. The connection nozzle 6 can be disposed in the diffusion body 31 and the vaporization body 41, and the connection nozzle 6 can be disposed on a coupling surface at which the diffusion body 31 and the vaporization body 41 are coupled to each other.

[0066] The connection nozzle 6 can include a plurality of first connection holes 61, a plurality of second connection holes 62, and a connection space 63.

[0067] The first connection holes 61 are connected to the diffusion space 30. The first connection holes 61 can be formed to penetrate the connection body 60. The connection body 60 constitutes the overall appearance of the connection nozzle 6. The connection body 60 can be disposed in the diffusion body 31 and the vaporization body 41, and can separate the diffusion space 30 and the vaporization space 40. The first connection holes 61 can be formed to penetrate one surface of the connection body 60 facing the diffusion space 30. The first connection holes 61 can be disposed spaced apart from each other.

[0068] The second connection holes 62 are connected to the vaporization space 40. The second connection holes 62 can be formed to penetrate the connection body 60. The second connection holes 62 can be formed to penetrate the other surface of the connection body 60 facing the vaporization space 40. The second connection holes 62 can be disposed spaced apart from each other.

[0069] The connection space 63 is provided between the first connection hole 61 and the second connection hole 62. The connection space 63 can correspond to an inner space of the connection body 60. The connection space 63 can be connected with the diffusion space 30 through the first connection hole 61, and can be connected with the vaporization space 40 through the second connection hole 62. Accordingly, the precursor and the second carrier gas can be initially diffused through the diffusion unit 3, and then can be secondarily diffused through the connection nozzle 6, and thus can be supplied to the vaporization space 40. Accordingly, the connection nozzle 6 can allow the initially diffused precursor to be supplied to the vaporization space 40 without being limited in the diffusion space 30. This is because the diameter of the particles of the initially diffused precursor is divided into diameters corresponding to each of the first connection hole 61 and the second connection hole 62 when passing through the connection nozzle 6. The diameter of each of the first connection hole 61 and the second connection hole 62 can be formed to be smaller than the diameter of the particles of the initially diffused precursor. Accordingly, the substrate processing apparatus 1 according to the present disclosure can further reduce the diameter of the particles of the precursor supplied to the vaporization space 40 by using the connection nozzle 6, and thus can allow the vaporization of the precursor to be more smoothly performed in the vaporization space 40.

[0070] Referring to Figures 1 to 5 The substrate processing unit 7 performs a processing process by using the source gas supplied from the supply unit 2. The substrate processing unit 7 can be connected to the vaporization unit 4, and can be supplied with the source gas from the vaporization unit 4. The substrate processing unit 7 can include a chamber 71, a substrate support unit 72, and a spray unit 73.

[0071] The chamber 71 provides a processing space 70. A processing process can be performed in the processing space 70. The processing space 70 can be provided in the chamber 71. An exhaust port (not shown) that exhausts gas from the processing space 70 can be coupled to the chamber 71. The substrate support unit 72 and the spray unit 73 can be provided in the chamber 71.

[0072] The substrate support unit 72 supports a substrate S. The substrate support unit 72 can support one substrate S, or can support a plurality of substrates S. In the case where the substrate support unit 72 supports a plurality of substrates S, a plurality of substrates S can be processed at a time. The substrate support unit 72 can be coupled to the chamber 71. The substrate support unit 72 can be provided in the chamber 71.

[0073] The injection unit 73 injects a gas toward the substrate support unit 72. The injection unit 73 can be connected to the supply unit 2. In this case, the injection unit 73 can inject the gas supplied from the supply unit 2 toward the substrate support unit 72. The injection unit 73 can be disposed in the chamber 71. The injection unit 73 can be disposed opposite to the substrate support unit 72. The injection unit 73 can be disposed on the substrate support unit 72. The processing space 70 can be disposed between the injection unit 73 and the substrate support unit 72. The injection unit 73 can be incorporated into a cover (not shown). The cover can be incorporated into the chamber 71 to cover an upper portion of the chamber 71.

[0074] The injection unit 73 can include a first gas flow path 73a and a second gas flow path 73b.

[0075] The first gas flow path 73a is used to inject a gas. One side of the first gas flow path 73a can be connected to the supply unit 2 through a hole of a pipe, a hose, or a gas block. The other side of the first gas flow path 73a can be connected to the processing space 70. Thus, the first gas supplied from the supply unit 2 can flow along the first gas flow path 73a and then can be injected into the processing space 70 through the first gas flow path 73a. The first gas flow path 73a can serve as a flow path capable of flowing a gas and can serve as an injection port for injecting a gas into the processing space 70.

[0076] The second gas flow path 73b is used to inject a second gas. The second gas and the first gas can be different gases. For example, when the first gas is a source gas, the second gas can be a reaction gas. One side of the second gas flow path 73b can be connected to the supply unit 2 through a hole of a pipe, a hose, or a gas block. The other side of the second gas flow path 73b can be connected to the processing space 70. Thus, the second gas supplied from the supply unit 2 can flow along the second gas flow path 73b and then can be injected into the processing space 70 through the second gas flow path 73b. The second gas flow path 73b can serve as a flow path capable of flowing a second gas and can serve as an injection port for injecting a second gas into the processing space 70.

[0077] Further, when the first gas is a source gas, the first gas flow path 73a can be connected to the vaporization unit 4. When the second gas is a reaction gas, the second gas flow path 73b can be connected to the third supply mechanism 23 included in the supply unit 2. The third supply mechanism 23 can be connected to the second gas flow path 73b through a hole of a pipe, a hose, or a gas block. Although not shown, the third supply mechanism 23 can include a third storage tank storing a reaction gas, a third pump supplying the reaction gas stored in the third storage tank, and a third valve for selectively supplying the reaction gas.

[0078] The second gas flow path 73b and the first gas flow path 73a can be configured to be spatially separated from each other. Therefore, the second gas supplied from the supply unit 2 to the second gas flow path 73b can be injected into the processing space 70 without passing through the first gas flow path 73a. The first gas supplied from the supply unit 2 to the first gas flow path 73a can be injected into the processing space 70 without passing through the second gas flow path 73b. The second gas flow path 73b and the first gas flow path 73a can inject gas towards different parts of the processing space 70.

[0079] For example, such as Figure 2 As shown, the injection unit 73 may include a first plate 731 and a second plate 732.

[0080] A first plate 731 is disposed on a second plate 732. The first plate 731 and the second plate 732 may be spaced apart from each other. A plurality of first vents 731a may be formed in the first plate 731. Each first vent 731a may serve as a path for the flow of a first gas. The first vents 731a may be included in a first gas flow path 73a. A plurality of second vents 731b may be formed in the first plate 731. Each second vent 731b may serve as a path for the flow of a second gas. The second vents 731b may be included in a second gas flow path 73b. A plurality of protruding members 731c may be attached to the first plate 731. The protruding members 731c may protrude from the lower surface of the first plate 731 toward the second plate 732. Each first vent 731a may be formed to penetrate the first plate 731 and the protruding member 731c. Although not shown, the lower surface of the first plate 731 may be formed to be flat and without the protruding members 731c.

[0081] Multiple openings 732a can be formed in the second plate 732. The openings 732a can be formed to penetrate the second plate 732. The openings 732a can be located at positions corresponding to the protruding members 731c. Therefore, as... Figure 2 As shown, the protruding member 731c can be formed to a length that allows the protruding member 731c to be inserted into the opening 732a respectively. Although not shown, the protruding member 731c can be formed to a length that allows the protruding member 731c to be respectively disposed on the opening 732a. The protruding member 731c can be formed to a length that protrudes downward from the second plate 732. The second vent 731b can be configured to spray gas toward the upper surface of the second plate 732.

[0082] The injection unit 73 can generate plasma using a second plate 732 and a first plate 731. In this case, plasma power, such as radio frequency (RF) power, can be applied to the first plate 731, and the second plate 732 can be grounded. The first plate 731 can be grounded, and plasma power can be applied to the second plate 732.

[0083] As Figure 3 indicated, a plurality of first openings 732b and a plurality of second openings 732c can be formed in the second plate 732.

[0084] The first openings 732b can be formed to penetrate the second plate 732. The first openings 732b can be connected to the first gas holes 731a, respectively. In this case, the protrusion members 731c can be provided to contact the upper surface of the second plate 732. The first gas can be injected into the process space 70 via the first gas holes 731a and the first openings 732b. The first gas holes 731a and the first openings 732b can be included in the first gas flow path 73a.

[0085] The second openings 732c can be formed to penetrate the second plate 732. The second openings 732c can be connected to the buffer space 733 provided between the first plate 731 and the second plate 732. The second gas can be injected into the process space 70 via the second gas holes 731b, the buffer space 733, and the second openings 732c. The second gas holes 731b, the buffer space 733, and the second openings 732c can be included in the second gas flow path 73b.

[0086] The above-described application is not limited to the embodiments and drawings described above, and it will be apparent to those skilled in the art that various modifications, changes, and substitutions can be made without departing from the scope and spirit of the application.

Claims

1. A vaporization apparatus for a substrate processing apparatus, the vaporization apparatus being used to vaporize a liquid or solid precursor to supply it to the substrate in a gaseous state, the vaporization apparatus comprising: The first inflow unit is supplied with a precursor and a first carrier gas; A diffusion unit, the diffusion unit including a diffusion space wider than the first inflow unit, and the precursor diffusing in the diffusion space; A second inflow unit is connected to the diffusion unit and is supplied with a second carrier gas to assist the diffusion of the precursor. as well as A vaporization unit, connected to the diffusion unit, is used to vaporize the diffusion precursor. The diffusion unit includes a cooling unit for cooling the diffusion space.

2. The gasification equipment as described in claim 1, wherein, The diffusion unit includes a diffusion body that provides the diffusion space in which the precursor and the second carrier gas diffuse. The cooling unit is integrated into the diffusion body and cools the diffusion space, thereby preventing the precursor from vaporizing in the diffusion space.

3. A vaporization apparatus for a substrate processing apparatus, the vaporization apparatus being used to vaporize a liquid or solid precursor to supply it to the substrate in a gaseous state, the vaporization apparatus comprising: The first inflow unit is supplied with a precursor and a first carrier gas; A diffusion unit, the diffusion unit including a diffusion space wider than the first inflow unit, and the precursor diffusing in the diffusion space; A second inflow unit is connected to the diffusion unit and is supplied with a second carrier gas to assist the diffusion of the precursor. as well as A vaporization unit, connected to the diffusion unit, is used to vaporize the diffusion precursor. The diffusion unit is controlled at a first temperature. The gasification unit is controlled at a second temperature, and The first temperature is lower than the second temperature.

4. The gasification equipment as described in claim 3, wherein, The diffusion unit includes a diffusion body and a cooling unit incorporated therein, the diffusion body providing the diffusion space in which the precursor and the second carrier gas diffuse. The cooling unit cools the diffusion space, thereby preventing the precursor from vaporizing in the diffusion space.

5. The gasification equipment as described in claim 4, wherein, The cooling unit includes a heat dissipation unit attached to the outer surface of the diffuser body.

6. The gasification equipment as described in claim 1 or 3, wherein, The gasification unit includes a gasification body and a heating unit integrated into the gasification body. The gasification body provides a gasification space for gasification based on thermal energy. The heating unit heats the vaporization space to provide thermal energy.

7. The gasification equipment as described in claim 6, wherein, The heating unit includes a first heater disposed on the side wall of the gasification body and a second heater disposed in the gasification space of the gasification body.

8. The gasification apparatus as claimed in claim 1 or 3, further comprising a connecting nozzle disposed between the diffusion unit and the gasification unit, separating the diffusion space and the gasification space of the gasification unit. in, The connecting nozzle includes a plurality of first connecting holes connected to the diffusion space, a plurality of second connecting holes connected to the vaporization space, and a connecting space disposed between the first connecting holes and the second connecting holes. The precursor is supplied from the diffusion space to the vaporization space via the connection space.

9. The gasification equipment as described in claim 1, wherein, The first inflow unit includes a first nozzle body having a first supply orifice formed for supplying the precursor to the diffusion unit. The second inflow unit includes a second nozzle body spaced apart from and disposed outside the first nozzle body, and The second carrier gas is supplied to the diffusion unit through a second supply hole located between the first nozzle body and the second nozzle body.

10. A substrate processing apparatus, comprising: Supply unit, which supplies source gas; as well as A substrate processing unit that performs a substrate processing process using the source gas supplied from the supply unit. The supply unit includes: The first inflow unit is supplied with a precursor and a first carrier gas; A diffusion unit, the diffusion unit including a diffusion space wider than the first inflow unit, and the precursor diffusing in the diffusion space; A second inflow unit, connected to the diffusion unit and supplied with a second carrier gas to assist the diffusion of the precursor; and A gasification unit, connected to the diffusion unit, is provided to vaporize the diffused precursor. The diffusion unit includes a cooling unit for cooling the diffusion space.

11. A substrate processing apparatus, comprising: Supply unit, which supplies source gas; as well as A substrate processing unit that performs a substrate processing process using the source gas supplied from the supply unit. The supply unit includes: The first inflow unit is supplied with a precursor and a first carrier gas; A diffusion unit, the diffusion unit including a diffusion space wider than the first inflow unit, and the precursor diffusing in the diffusion space; A second inflow unit, connected to the diffusion unit and supplied with a second carrier gas to assist the diffusion of the precursor; and A vaporization unit, connected to the diffusion unit, is used to vaporize the diffusion precursor. The diffusion unit is controlled at a first temperature. The gasification unit is controlled at a second temperature, and The first temperature is lower than the second temperature.

12. The substrate processing apparatus as claimed in claim 11, wherein, The diffusion unit includes a cooling unit for cooling the diffusion space.

13. The substrate processing apparatus as described in claim 10 or 11, wherein, The gasification unit includes a gasification body and a heating unit integrated into the gasification body. The gasification body provides a gasification space for gasification based on thermal energy. The heating unit heats the vaporization space to provide thermal energy.

14. The substrate processing apparatus as claimed in claim 13, wherein, The heating unit includes a first heater disposed on the side wall of the gasification body and a second heater disposed in the gasification space of the gasification body.

15. The substrate processing apparatus as claimed in claim 11 or 12, wherein, The supply unit includes a connecting nozzle disposed between the diffusion unit and the gasification unit, separating the diffusion space and the gasification space of the gasification unit. The connecting nozzle includes a plurality of first connecting holes connected to the diffusion space, a plurality of second connecting holes connected to the vaporization space, and a connecting space disposed between the first connecting holes and the second connecting holes. The precursor is supplied from the diffusion space to the vaporization space via the connection space.

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