Copper nanowire high-transmittance conductive glass and preparation method thereof

Abstract

The invention relates to copper nanowire high-transmittance conductive glass and a preparation method thereof.The copper nanowire high-transmittance conductive glass comprises a glass substrate, the surface of one side of the glass substrate is covered with a PEDOT: PSS layer and a PEDOT: PSS / TiN film / copper nanowire composite conductive network, and the PEDOT: PSS / TiN film / copper nanowire composite conductive network sequentially comprises a copper nanowire, a TiN film and a PEDOT: PSS layer from bottom to top; the copper nanowire is spin-coated on the surface of the glass substrate, a part of the TiN film covers the copper nanowire, and a part of the TiN film covers the surface of the glass substrate; the PEDOT: PSS layer covers the surface of the glass substrate which is not covered by the copper nanowire and the TiN thin film, and also covers the TiN thin film to form a PEDOT: PSS / TiN thin film / copper nanowire composite conductive network; and the PEDOT: PSS layer also covers the copper nanowire and the side wall of the TiN film. The preparation method is simple, the raw material cost is low, indium tin oxide (ITO) does not need to be used, the resistance of the obtained copper nanowire high-transmittance conductive glass is 10-20 omega / square, the light transmittance is 83-86%, and the copper nanowire high-transmittance conductive glass has high conductivity and high light transmittance.

Description

Technical Field

[0001] This invention relates to the field of functional glass technology, specifically to a copper nanowire high-transmittance conductive glass and its preparation method. Background Technology

[0002] Transparent conductive glass, possessing both transparency and conductivity, plays an indispensable role in many key fields, such as photoelectric detectors, photovoltaic devices, thin-film (optoelectronic) transistors, liquid crystal displays, sensors, and heat reflectors. Its core function is to maintain high light transmittance while possessing excellent conductivity, thereby meeting the dual electro-optical performance requirements of devices such as solar cells, touch screens, liquid crystal displays, and organic light-emitting diodes.

[0003] Currently, indium tin oxide (ITO) is the mainstream transparent conductive glass material on the market. ITO has excellent optoelectronic properties and a mature manufacturing process, making it the most widely used transparent conductive material in commercial applications. However, ITO has some significant drawbacks, such as the scarcity of indium resources, high glass manufacturing costs, high brittleness, and poor applicability in flexible devices.

[0004] To address the aforementioned issues, researchers have begun exploring alternative materials to ITO, with ZnO and SnO2-based oxide conductive films being among the most studied. These materials offer advantages such as abundant resources, low cost, and environmental friendliness, and also possess a certain level of conductivity. However, due to enhanced optical absorption at high carrier concentrations, their transmittance decreases, making it difficult for them to match the performance of ITO. Therefore, designing novel structures and developing high-transmittance conductive glasses has become an important research direction. Summary of the Invention

[0005] The purpose of this invention is to provide a copper nanowire high-transparency conductive glass and its preparation method, to replace transparent conductive glass represented by indium tin oxide (ITO), and to solve the problems of scarce raw material resources, high cost, high brittleness of ITO and poor applicability in flexible devices.

[0006] The primary objective of this invention is to provide a copper nanowire high-transmittance conductive glass, comprising a glass substrate. One side surface of the glass substrate is covered with a PEDOT:PSS layer and a PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS / TiN film / copper nanowire composite conductive network consists of copper nanowires, a TiN film, and the PEDOT:PSS layer from bottom to top. The copper nanowires are spin-coated onto the surface of the glass substrate. Part of the TiN film covers and contacts the copper nanowires, and part of the film covers and contacts the glass substrate. The PEDOT:PSS layer covers the glass substrate surface without copper nanowires and the TiN film, and also covers the TiN film to form the PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS layer also covers the sidewalls of the copper nanowires and the TiN film.

[0007] The aforementioned copper nanowire high-transmittance conductive glass has a PEDOT:PSS / TiN thin film / copper nanowire composite conductive network with a line width of 20~40 μm.

[0008] The aforementioned copper nanowire high-transmittance conductive glass has a resistance of 10-20 Ω / □ and a transmittance of 83-86% at 550 nm at room temperature.

[0009] Another objective of this invention is to provide a method for preparing copper nanowire high-transmittance conductive glass, specifically comprising the following steps: (1) After cleaning the glass substrate, copper nanowires are spin-coated on one side of the glass substrate using spin-coating technology. By controlling the number of spin-coatings, a copper nanowire conductive network film with a resistance of 5-10Ω / □ is obtained. The area not covered by the copper nanowires is exposed on the glass substrate. (2) A silicone-acrylic emulsion is spin-coated onto the copper nanowire conductive network film and the exposed glass substrate using spin-coating technology, and then dried at room temperature for 30 minutes. After the silicone-acrylic emulsion dries, a mesh-like silicone-acrylic cracking template is formed on the glass surface. The mesh-like silicone-acrylic cracking template includes multiple intersecting mesh lines and mesh holes located between the mesh lines. The cracks in the silicone-acrylic film form the multiple intersecting mesh lines, and the uncracked parts are mesh holes. The mesh holes are filled with silicone-acrylic film, and the glass substrate and copper nanowires located in the mesh lines of the mesh-like silicone-acrylic cracking template are in an exposed state. (3) After step (2) is completed, TiN film is deposited on the surface of the mesh silicon-propylene cracked template by magnetron sputtering technology; the target material used is titanium metal target, the deposition temperature is room temperature, and the sputtering gas is argon-nitrogen mixture. (4) After step (3) is completed, the glass sample is placed in chloroform and ultrasonically cleaned for 5-10 minutes to remove the silicon-propylene film. At the same time, the TiN film on the surface of the silicon-propylene film and the copper nanowires under the silicon-propylene film also fall off, while the TiN film in the mesh of the cracked silicon-propylene template and the copper nanowires under the TiN film remain on the glass substrate. TiN has good light transmittance, conductivity and stability. While protecting the copper nanowires, it can further improve the conductivity of the glass. (5) After step (4) is completed, the glass sample is placed in ferric chloride solution and ultrasonically cleaned for 2-5 min to further remove copper nanowires on the glass substrate surface that are not covered by TiN film. (6) After step (5) is completed, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) is spin-coated onto the glass surface with the TiN film / copper nanowire side at a speed of 2000-3000 r / min for 30-60 s. The PEDOT:PSS layer has good conductivity, which can further reduce the resistance of the conductive network on the glass surface and increase the stability between the copper nanowire and the substrate, preventing the copper nanowire from falling off. In addition, the PEDOT:PSS layer provides secondary protection for the copper nanowire, further improving the oxidation resistance of the copper nanowire. (7) Dry the glass sample after step (6) at 80~120℃ for 10~30 min to obtain copper nanowire high-transmittance conductive glass.

[0010] Preferably, in step (2), the thickness of the silicon-propylene film is 40~80 μm, the width of the mesh is 20~40 μm, and the average spacing of the mesh is 100~200 μm.

[0011] Preferably, in step (3), the argon-nitrogen flow ratio is 12:1, the sputtering pressure is 0.8~1.2 Pa, the sputtering power is 50~80 W, and the film thickness is 50~100 nm.

[0012] Preferably, the mass concentration of the ferric chloride solution in step (5) is 1%.

[0013] The copper nanowire high-transmittance conductive glass prepared according to the aforementioned preparation method includes a glass substrate, a PEDOT:PSS layer covering the surface of the glass substrate, and a PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS / TiN film / copper nanowire composite conductive network consists of copper nanowires, a TiN film, and a PEDOT:PSS layer from bottom to top. The copper nanowires are spin-coated onto the surface of the glass substrate. Part of the TiN film covers the copper nanowires and is in contact with them, while another part covers the surface of the glass substrate and is in contact with it. The PEDOT:PSS layer covers the surface of the glass substrate without copper nanowires and TiN film, and also covers the TiN film to form the PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS layer also covers the sidewalls of the copper nanowires and the TiN film.

[0014] The copper nanowire high-transmittance conductive glass prepared according to the aforementioned method has a resistance of 10-20 Ω / □ and a transmittance of 83-86% at 550 nm at room temperature.

[0015] Compared with the prior art, the present invention has the following beneficial effects: This invention offers a simple preparation method with low-cost raw materials. Copper nanowires provide conductivity, while the PEDOT:PSS layer and the TiN film covering the copper nanowires exhibit conductivity, reducing the glass's resistance and improving its conductivity. Simultaneously, the TiN film provides excellent light transmittance, ensuring the glass's overall light transmittance. Part of the TiN film covers and contacts the copper nanowires, while another part covers and contacts the glass substrate, thus protecting the copper nanowires. The PEDOT:PSS layer covers both the glass substrate surface and the TiN film, as well as the sidewalls of the copper nanowires and TiN film, further encapsulating them and providing secondary protection against detachment. This also protects the glass substrate surface without the copper nanowires and TiN film covering. The resulting high-transmittance conductive glass with copper nanowires has a resistivity of 10-20 Ω / □ and a transmittance of 83-86% at 550 nm at room temperature, exhibiting both high conductivity and high transmittance. The preparation process of this invention does not require the use of indium tin oxide (ITO), which solves the problems of scarce raw material resources, high cost, high brittleness, and poor applicability in flexible devices of transparent conductive glass represented by indium tin oxide (ITO). Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the cross-sectional structure of the copper nanowire high-transmittance conductive glass prepared in Example 1.

[0017] Figure 2This is a schematic diagram of the surface structure of the copper nanowire high-transmittance conductive glass prepared in Example 1.

[0018] Among them, 1-glass substrate; 2-copper nanowires; 3-TiN thin film; 4-PEDOT:PSS layer; 5-PEDOT:PSS / TiN thin film / copper nanowire composite conductive network. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] The present invention will be described in detail below with reference to specific embodiments. Unless otherwise specified, all conditions in the following embodiments are performed under conventional conditions or conditions recommended by the manufacturer. Raw materials and reagents whose manufacturers are not specified are all commercially available conventional products. In the following embodiments, the spin coating process is performed using a spin coater, spin coating copper nanowires onto one side of the glass substrate (single-sided spin coating). Subsequent preparation processes are all performed on the side of the glass substrate with the copper nanowires.

[0021] Example 1: (1) After cleaning the glass substrate, copper nanowires are spin-coated on one side of the glass substrate using spin-coating technology to obtain a copper nanowire conductive network film with a resistance of 7 Ω / □. The area not covered by the copper nanowires is exposed on the glass substrate.

[0022] (2) A silicone-acrylic emulsion was spin-coated onto the copper nanowire conductive network film and the exposed glass substrate using spin-coating technology, and then dried at room temperature for 30 min. After the silicone-acrylic emulsion dried, a mesh-like silicone-acrylic cracking template was formed on the glass surface. The mesh-like silicone-acrylic cracking template includes multiple intersecting mesh lines and mesh holes located between the mesh lines. The cracks in the silicone-acrylic film form the multiple intersecting mesh lines, and the uncracked parts are mesh holes. The mesh holes are filled with silicone-acrylic film, and the copper nanowires and glass substrate located in the mesh lines are in an exposed state. In this step, the thickness of the silicon-propylene film is 60 μm, the width of the mesh lines (cracks) formed by the cracking of the silicon-propylene film is 30 μm, and the average spacing of the mesh lines is about 150 μm (i.e., the average size of the mesh).

[0023] (3) After step (2) is completed, TiN film is deposited on the surface of the mesh silicon-propylene cracked template by magnetron sputtering technology. The target material used is a titanium metal target, the deposition temperature is room temperature, the sputtering gas is an argon-nitrogen mixture, the argon-nitrogen flow ratio is 12:1, the sputtering pressure is 1.0 Pa, the sputtering power is 60 W, and the film thickness is 70 nm.

[0024] (4) After step (3) is completed, the glass sample is placed in chloroform and ultrasonically cleaned for 8 min to remove the silicon-propylene film. At the same time, the TiN film on the surface of the silicon-propylene film and the copper nanowires under the silicon-propylene film also fall off, while the TiN film in the cracked template wire of the silicon-propylene mesh and the copper nanowires under the TiN film remain on the glass substrate. TiN has good light transmittance, conductivity and stability. While protecting the copper nanowires, it can further improve the conductivity of the glass.

[0025] (5) After step (4) is completed, the glass sample is placed in a 1% ferric chloride solution and ultrasonically cleaned for 3 minutes to further remove the copper nanowires on the glass substrate surface that are not covered by the TiN film.

[0026] (6) After step (5) is completed, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) is spin-coated onto the surface of the glass sample with the TiN film / copper nanowires at a speed of 2500 r / min for 40 s. The PEDOT:PSS layer has good conductivity, which can further reduce the resistance of the conductive network on the glass surface, and can also increase the stability between the copper nanowires and the substrate, preventing the copper nanowires from falling off. In addition, the PEDOT:PSS layer provides secondary protection for the copper nanowires, further improving their oxidation resistance.

[0027] (7) Dry the glass sample after step (6) at 100°C for 20 min to obtain copper nanowire high-transmittance conductive glass.

[0028] The obtained copper nanowire high-transmittance conductive glass was tested and found to have a resistance of 16 Ω / □ and a transmittance of 85% at 550 nm at room temperature.

[0029] Figure 1This is a schematic diagram of the cross-sectional structure of the copper nanowire high-transmittance conductive glass prepared in this embodiment. It includes a glass substrate 1, with a PEDOT:PSS layer 4 and a PEDOT:PSS / TiN film / copper nanowire composite conductive network covering one side of the glass substrate. The PEDOT:PSS / TiN film / copper nanowire composite conductive network consists of copper nanowires 2, TiN film 3 and PEDOT:PSS layer 4 from bottom to top. The copper nanowires 2 are spin-coated on one side of the glass substrate, and the copper nanowires are covered with TiN film 3. Part of TiN film 3 covers the copper nanowires and is in contact with them, and part of it covers the surface of the glass substrate and is in contact with it, thus protecting the copper nanowires. The PEDOT:PSS layer covers the surface of the glass substrate without copper nanowires and TiN film, and also covers the TiN film to form a PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS layer also covers the sidewalls of the copper nanowires and TiN film, thereby wrapping the TiN film and copper nanowires, playing a secondary protection role, preventing the TiN film and copper nanowires from falling off, and at the same time protecting the surface of the glass substrate without copper nanowires and TiN film.

[0030] Figure 2 This is a schematic diagram of the surface structure of the copper nanowire high-transmittance conductive glass prepared in this embodiment. The white irregularly shaped mesh is the glass substrate covered with a PEDOT:PSS layer, and the black network lines are the PEDOT:PSS / TiN film / copper nanowire composite conductive network 5. The composite conductive network is interwoven to form a conductive network, and the width of the PEDOT:PSS / TiN film / copper nanowire composite conductive network is 30 μm.

[0031] Example 2: (1) After cleaning the glass substrate, copper nanowires are spin-coated on one side of the glass substrate using spin-coating technology to obtain a copper nanowire conductive network film with a resistance of 5 Ω / □. The area not covered by the copper nanowires is exposed on the glass substrate.

[0032] (2) A silicone-acrylic emulsion was spin-coated onto a copper nanowire conductive network film and an exposed glass substrate using spin-coating technology. The emulsion was then dried at room temperature for 30 min. After drying, the silicone-acrylic emulsion formed a mesh-like silicone-acrylic cracking template on the glass surface. The mesh-like silicone-acrylic cracking template included multiple intersecting mesh lines and mesh holes between the mesh lines. The cracks in the silicone-acrylic film formed the multiple intersecting mesh lines. The uncracked parts were mesh holes, which were filled with silicone-acrylic film. The copper nanowires located in the mesh lines were exposed. In this step, the thickness of the silicon-propylene film is 40 μm, the width of the mesh lines (cracks) formed by the cracking of the silicon-propylene film is 20 μm, and the average spacing of the mesh lines is 100 μm (i.e., the average size of the mesh).

[0033] (3) After step (2) is completed, TiN film is deposited on the surface of the mesh silicon-propylene cracked template by magnetron sputtering technology. The target material used is a titanium metal target, the deposition temperature is room temperature, the sputtering gas is an argon-nitrogen mixture, the argon-nitrogen flow ratio is 12:1, the sputtering pressure is 0.8 Pa, the sputtering power is 50 W, and the film thickness is 50 nm.

[0034] (4) After step (3) is completed, the glass sample is placed in chloroform and ultrasonically cleaned for 8 min to remove the silicon-propylene film. At the same time, the TiN film on the surface of the silicon-propylene film and the copper nanowires under the silicon-propylene film also fall off, while the TiN film in the cracked template wire of the silicon-propylene mesh and the copper nanowires under the TiN film remain on the glass substrate. TiN has good light transmittance, conductivity and stability. While protecting the copper nanowires, it can further improve the conductivity of the glass.

[0035] (5) After step (4) is completed, the glass sample is placed in a 1% ferric chloride solution and ultrasonically cleaned for 2 minutes to further remove the copper nanowires on the glass substrate surface that are not covered by the TiN film.

[0036] (6) After step (5) is completed, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) is spin-coated onto the side of the glass sample with the TiN film / copper nanowires at a speed of 2000 r / min for 30 s. The PEDOT:PSS layer has good conductivity, which can further reduce the resistance of the conductive network on the glass surface, and can also increase the stability between the copper nanowires and the substrate, preventing the copper nanowires from falling off. In addition, the PEDOT:PSS layer provides secondary protection for the copper nanowires, further improving their oxidation resistance.

[0037] (7) Dry the glass sample after step (6) at 80°C for 10 min to obtain copper nanowire high-transmittance conductive glass.

[0038] The obtained copper nanowire high-transmittance conductive glass was tested and found to have a resistivity of 10.1 Ω / □ and a transmittance of 83.3% at 550 nm at room temperature. In this embodiment, the mesh width of the PEDOT:PSS / TiN film / copper nanowire composite conductive network is 20 μm.

[0039] Example 3: (1) After cleaning the glass substrate, copper nanowires are spin-coated on one side of the glass substrate using spin-coating technology to obtain a copper nanowire conductive network film with a resistance of 10 Ω / □. The area not covered by the copper nanowires is exposed on the glass substrate.

[0040] (2) A silicone-acrylic emulsion was spin-coated onto a copper nanowire conductive network film and an exposed glass substrate using spin-coating technology. The emulsion was then dried at room temperature for 30 min. After drying, the silicone-acrylic emulsion formed a mesh-like silicone-acrylic cracking template on the glass surface. The mesh-like silicone-acrylic cracking template included multiple intersecting mesh lines and mesh holes between the mesh lines. The cracks in the silicone-acrylic film formed the multiple intersecting mesh lines. The uncracked parts were mesh holes, which were filled with silicone-acrylic film. The copper nanowires located in the mesh lines were exposed. In this step, the thickness of the silicon-propylene film is 80 μm, the width of the mesh lines (cracks) formed by the cracking of the silicon-propylene film is 40 μm, and the average spacing of the mesh lines is 200 μm (i.e., the average size of the mesh).

[0041] (3) After step (2) is completed, TiN film is deposited on the surface of the mesh silicon-propylene cracked template by magnetron sputtering technology. The target material used is a titanium metal target, the deposition temperature is room temperature, the sputtering gas is an argon-nitrogen mixture, the argon-nitrogen flow ratio is 12:1, the sputtering pressure is 1.2 Pa, the sputtering power is 80 W, and the film thickness is 100 nm.

[0042] (4) After step (3) is completed, the glass sample is placed in chloroform and ultrasonically cleaned for 10 min to remove the silicon-propylene film. At the same time, the TiN film on the surface of the silicon-propylene film and the copper nanowires under the silicon-propylene film also fall off, while the TiN film in the cracked template wire of the silicon-propylene mesh and the copper nanowires under the TiN film remain on the glass substrate. TiN has good light transmittance, conductivity and stability. While protecting the copper nanowires, it can further improve the conductivity of the glass.

[0043] (5) After step (4) is completed, the glass sample is placed in a 1% ferric chloride solution and ultrasonically cleaned for 5 minutes to further remove the copper nanowires on the glass substrate surface that are not covered by the TiN film.

[0044] (6) After step (5) is completed, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) is spin-coated onto the surface of the glass with the TiN film / copper nanowires at a speed of 3000 r / min for 60 s. The PEDOT:PSS layer has good conductivity, which can further reduce the resistance of the conductive network on the glass surface, and can also increase the stability between the copper nanowires and the substrate, preventing the copper nanowires from falling off. In addition, the PEDOT:PSS layer provides secondary protection for the copper nanowires, further improving their oxidation resistance.

[0045] (7) Dry the glass sample after step (6) at 120°C for 30 min to obtain copper nanowire high-transmittance conductive glass.

[0046] The obtained copper nanowire high-transmittance conductive glass was tested and found to have a resistivity of 18.8 Ω / □ and a transmittance of 85.5% at 550 nm at room temperature. In this embodiment, the mesh width of the PEDOT:PSS / TiN film / copper nanowire composite conductive network is 40 μm.

[0047] The above description is merely an embodiment of the present invention and is not intended to limit the present invention in any way. The present invention can also have other embodiments based on the above structure and function, which will not be listed hereafter. Therefore, any simple modifications, equivalent changes, and alterations made by those skilled in the art to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the scope of the present invention.

Claims

1. A copper nanowire high-transmittance conductive glass, characterized in that, The device includes a glass substrate (1), one side of which is covered with a PEDOT:PSS layer (4) and a PEDOT:PSS / TiN film / copper nanowire composite conductive network (5). The PEDOT:PSS / TiN film / copper nanowire composite conductive network (5) consists of copper nanowires (2), TiN film (3) and PEDOT:PSS layer from bottom to top. The copper nanowires (2) are spin-coated on the surface of the glass substrate. Part of the TiN film (3) covers the copper nanowires and contacts them, and part of it covers the surface of the glass substrate and contacts it. The PEDOT:PSS layer covers the surface of the glass substrate without copper nanowires and TiN film, and also covers the TiN film to form the PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS layer also covers the sidewalls of the copper nanowires and TiN film.

2. The copper nanowire high-transmittance conductive glass as described in claim 1, characterized in that, The PEDOT:PSS / TiN thin film / copper nanowire composite conductive network has a mesh width of 20~40 μm.

3. The copper nanowire high-transmittance conductive glass as described in claim 1, characterized in that, Its resistance is 10-20 Ω / □, and its transmittance is 83-86%.

4. A method for preparing a copper nanowire high-transmittance conductive glass, characterized in that, Includes the following steps: (1) After cleaning the glass substrate, copper nanowires are spin-coated on one side of the glass substrate using spin-coating technology to obtain a copper nanowire conductive network film with a resistance of 5-10Ω / □. The area not covered by the copper nanowires is exposed on the glass substrate. (2) A silicone-acrylic emulsion was spin-coated onto the copper nanowire conductive network film and the exposed glass substrate using spin-coating technology. The emulsion was then dried at room temperature for 30 min. After drying, the silicone-acrylic emulsion formed a mesh-like silicone-acrylic cracking template on the glass surface. The mesh-like silicone-acrylic cracking template included multiple intersecting mesh lines and mesh holes between the mesh lines. The cracks in the silicone-acrylic film formed the multiple intersecting mesh lines. The uncracked parts were mesh holes, which were filled with silicone-acrylic film. The glass substrate and copper nanowires located within the mesh lines of the mesh-like silicone-acrylic cracking template were in an exposed state. (3) After step (2) is completed, TiN film is deposited on the surface of the mesh silicon-propylene cracked template by magnetron sputtering technology; the target material used is titanium metal target, the deposition temperature is room temperature, and the sputtering gas is argon-nitrogen mixture. (4) After step (3) is completed, the glass sample is placed in chloroform and ultrasonically cleaned for 5-10 minutes to remove the silicon-propylene film. At the same time, the TiN film on the surface of the silicon-propylene film and the copper nanowires under the silicon-propylene film also fall off, while the TiN film in the mesh silicon-propylene cracked template and the copper nanowires under the TiN film remain on the glass substrate. (5) After step (4) is completed, the glass sample is placed in ferric chloride solution and ultrasonically cleaned for 2-5 min to further remove copper nanowires on the glass substrate surface that are not covered by TiN film. (6) After step (5) is completed, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) is spin-coated on the surface of the glass sample with TiN film / copper nanowire at a speed of 2000-3000 r / min for 30-60 s. (7) Dry the glass sample after step (6) to obtain copper nanowire high-transmittance conductive glass.

5. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, In step (2), the thickness of the silicon-propylene film is 40~80 μm, the width of the mesh is 20~40 μm, and the average spacing of the mesh is 100~200 μm.

6. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, In step (3), the argon-nitrogen flow ratio is 12:1, the sputtering pressure is 0.8~1.2 Pa, the sputtering power is 50~80 W, and the film thickness is 50~100 nm.

7. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, The mass concentration of the ferric chloride solution in step (5) is 1%.

8. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, In step (7), the glass sample is dried at 80~120℃ for 10~30 min.

9. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, The obtained copper nanowire high-transmittance conductive glass includes a glass substrate (1), a PEDOT:PSS layer (4) covering the surface of the glass substrate, and a PEDOT:PSS / TiN film / copper nanowire composite conductive network (5). The PEDOT:PSS / TiN film / copper nanowire composite conductive network consists of copper nanowires (2), TiN film (3), and PEDOT:PSS layer from bottom to top. Copper nanowires are spin-coated on the surface of the glass substrate. Part of the TiN film covers the copper nanowires and contacts them, and part of the film covers the surface of the glass substrate and contacts it. The PEDOT:PSS layer covers the surface of the glass substrate without copper nanowires and TiN film, and also covers the TiN film to form the PEDOT:PSS / TiN film / copper nanowire composite conductive network. The PEDOT:PSS layer also covers the sidewalls of the copper nanowires and TiN film.

10. The method for preparing copper nanowire high-transmittance conductive glass as described in claim 4, characterized in that, The resulting copper nanowire high-transmittance conductive glass has a resistivity of 10-20 Ω / □ and a transmittance of 83-86%.

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