Frame and frame manufacturing method

Abstract

The invention relates to a frame and a frame manufacturing method. A frame manufacturing method according to the present invention is used in a connector of a mask for OLED pixel formation and a frame, the method comprising the steps of: (a) adhering a first surface of a sheet to a moving plate; (b) the thickness of the metal sheet is reduced; (c) manufacturing a unit sheet part by forming a plurality of mask unit regions on a second surface opposite to the first surface of the metal sheet; (d) connecting the unit sheet portion to an edge frame portion, the edge frame portion including a hollow region.

Description

Technical Field

[0001] This invention relates to a frame and a method for manufacturing the frame. More specifically, it relates to a frame and a method for manufacturing the frame, the frame being used in a connector between a mask and a frame, the connector having a mask with a high-resolution mask pattern formed thereon, capable of forming the mask without deformation and stably, and enabling accurate alignment between the mask units. Background Technology

[0002] As a technique for forming pixels in the manufacturing process of OLED (organic light-emitting diode), the FMM (Fine Metal Mask) method is mainly used. This method involves attaching a thin-film metal mask (Shadow Mask) tightly to the substrate and depositing organic matter at the desired location.

[0003] In existing OLED manufacturing processes, masks are fabricated into strips, plates, etc., and then welded and fixed to the OLED pixel evaporation frame. A single mask can contain multiple units corresponding to a single display. Furthermore, to manufacture large-area OLEDs, multiple masks can be fixed to the OLED pixel evaporation frame. During the fixing process, each mask is stretched to flatten it. Adjusting the stretching force to flatten the entire mask is a very difficult operation. In particular, to simultaneously flatten each unit and align mask patterns ranging from several μm to tens of μm in size, the following highly complex operation is required: finely adjusting the stretching force applied to each side of the mask while simultaneously checking the alignment status in real time.

[0004] Nevertheless, during the process of fixing multiple masks to a frame, there are still problems with misalignment between masks and between mask units. In addition, during the process of welding and fixing the masks to the frame, if the mask film is too thin and has a large area, there are problems such as the mask sagging or twisting due to the load; wrinkles, burrs and other defects generated in the welded parts during the welding process also cause problems with the misalignment of mask units.

[0005] In ultra-high-definition OLEDs, existing QHD resolution has a pixel density of 500-600 PPI (pixels per inch), with pixel sizes reaching approximately 30-50 μm. 4K UHD and 8K UHD resolutions, on the other hand, boast even higher resolutions of -860 PPI and -1600 PPI, respectively. Given the pixel size of ultra-high-definition OLEDs, the alignment error between individual units needs to be reduced to around a few μm. Exceeding this error will lead to product defects, potentially resulting in extremely low yields. Therefore, it is necessary to develop technologies that prevent mask sagging or twisting and ensure precise alignment, as well as technologies for fixing the mask to the frame. Summary of the Invention

[0006] Technical issues

[0007] Therefore, the present invention is proposed to solve the various problems of the prior art as described above, and its object is to provide a frame and a frame manufacturing method, which is used in the connection between the mask and the frame, the connection can make the mask stable and movable without deformation, and can prevent the mask from sagging or twisting and can be accurately aligned.

[0008] Furthermore, the present invention aims to provide a frame and a frame manufacturing method that enables accurate alignment between mask units and more clearly forms the edge portion of the border.

[0009] However, the above-mentioned technical problems are merely exemplary, and the scope of the present invention is not limited thereto.

[0010] Technical solution

[0011] The above-mentioned objective of the present invention is achieved by a frame manufacturing method, which is used in a connector between an OLED pixel forming mask and a frame. The method includes the following steps: (a) bonding a first side of a metal sheet to a movable plate; (b) thinning the thickness of the metal sheet; (c) manufacturing a unit sheet portion by forming a plurality of mask unit regions on a second side opposite to the first side of the metal sheet; and (d) connecting the unit sheet portion to an edge frame portion, the edge frame portion including a hollow region.

[0012] In step (a), the movable plate and the metal sheet can be bonded together by clamping a dry film resist layer (DFR layer).

[0013] The movable plate may be made of borosilicate glass, and the width × length of the movable plate may be at least greater than 1500mm × 900mm.

[0014] The metal sheet can be formed using a rolling process, wherein in step (a) the thickness of the metal sheet can be at least greater than 100 μm, and in step (b) the thickness of the metal sheet can be reduced to 50 μm to 100 μm.

[0015] Between step (b) and step (c), or between step (c) and step (d), the following step may be further included: during step (d), the connecting region of the metal sheet used to contact the edge frame portion is thinned to less than the thickness of the metal sheet.

[0016] In step (d), the unit sheet portion and the edge frame portion can be connected by irradiating the connection area with a laser.

[0017] The thickness reduction of the metal sheet can be achieved using any one of the following methods: chemical mechanical polishing (CMP), chemical wet etching, dry etching, lapping, or buffing.

[0018] After the thickness of the metal sheet is reduced, the surface roughness (Ra) of the second side of the metal sheet can be less than 0.1 μm (more than 0).

[0019] Step (b) may include the following steps: (b1) removing surface defects and thinning the metal sheet on the opposite side of the first side, i.e., the second side; and (b2) thinning the second side by means of etching.

[0020] The thickness reduction in step (b1) can be achieved by any of the following methods: lapping, polishing, or buffing, reducing the thickness by 2.5% to 12.5% ​​based on the initial thickness of the metal sheet. After step (b1), particles contained in defects on the second surface can be removed.

[0021] The thickness reduction in step (b2) can be achieved using wet etching, with a reduction amount greater than that in step (b1).

[0022] In step (c), the unit sheet portion may include: an edge sheet portion; a plurality of first grid sheet portions extending along a first direction and connected at both ends to the edge sheet portion; and a plurality of second grid sheet portions extending along a second direction perpendicular to the first direction and intersecting with the first grid sheet portions and connected at both ends to the edge sheet portion, wherein in step (d), at least a portion of the edge sheet portion may be connected to the edge frame portion.

[0023] Step (c) may include the following steps: (c1) forming a patterned first insulating portion on the second surface of the metal sheet; (c2) forming a first unit pattern with a first depth on the second surface of the metal sheet using wet etching; (c3) filling at least the first unit pattern with a second insulating portion; (c4) retaining only the second insulating portion located vertically below the first insulating portion; (c5) forming a second unit pattern with a second depth from the first unit pattern on the second surface of the metal sheet using wet etching; (c6) filling at least the second unit pattern with a third insulating portion; (c7) retaining only the third insulating portion located vertically below the second insulating portion; and (c8) forming a third unit pattern with a third depth from the second unit pattern on the second surface of the metal sheet using wet etching.

[0024] After step (c8), the mask unit region is formed by opening the first surface of the metal sheet, the metal sheet being provided as a unit sheet portion having a plurality of the mask unit regions formed along a first direction and a second direction perpendicular to the first direction.

[0025] The difference in width between the first unit pattern and the second unit pattern can be greater than the difference in width between the second unit pattern and the third unit pattern.

[0026] Furthermore, the above-mentioned objective of the present invention is achieved by a frame manufacturing method, which is used in a connector between an OLED pixel forming mask and a frame. The method includes the following steps: (a) bonding a first side of a metal sheet to a first movable plate; (b) thinning the thickness on the opposite side of the first side of the metal sheet, i.e., a second side; (c) bonding the second side of the metal sheet to a second movable plate; (d) separating the first movable plate from the metal sheet; (e) thinning the thickness on the first side of the metal sheet; (f) forming a plurality of mask unit regions on the first side of the metal sheet and manufacturing unit sheet portions; and (g) connecting the unit sheet portions to edge frame portions, the edge frame portions including hollow regions.

[0027] Furthermore, the above-mentioned objective of the present invention is achieved by a frame used in a connector between an OLED pixel forming mask and a frame. The frame includes: an edge frame portion including a hollow region; and a unit sheet portion connected to the edge frame portion and having a plurality of mask unit regions formed thereon. The unit sheet portion includes: an edge sheet portion; a plurality of first grid sheet portions extending along a first direction and connected at both ends to the edge sheet portion; and a plurality of second grid sheet portions extending along a second direction perpendicular to the first direction and intersecting with the first grid sheet portions, and connected at both ends to the edge sheet portion. The width × length dimension of the unit sheet portion is greater than 1500mm × 900mm, and the thickness is less than 100μm.

[0028] The thickness of the connecting portion of the edge sheet portion that contacts the edge frame portion may be less than the thickness of the remaining portion of the edge sheet portion. Apart from the connecting portion, the lower surface of the edge sheet portion, the lower surface of the first grid sheet portion, and the lower surface of the second grid sheet portion may be arranged in the hollow area of ​​the edge frame portion.

[0029] Technical effect

[0030] According to the present invention having the structure described above, the mask can be stably supported and moved without deformation, and the mask can be prevented from sagging or twisting and can be accurately aligned.

[0031] Furthermore, according to the present invention, it has the effect of enabling accurate alignment between mask units and more clearly forming the edge portion of the border.

[0032] Of course, the scope of the present invention is not limited to the effects described above. Attached Figure Description

[0033] Figure 1 This is a front view and a side cross-sectional view of the connection between the mask and the frame according to an embodiment of the present invention.

[0034] Figure 2 This is a front view and a side cross-sectional view of a frame according to an embodiment of the present invention.

[0035] Figure 3 This is a schematic diagram of a mask according to an embodiment of the present invention.

[0036] Figure 4 This is a schematic diagram of the existing mask manufacturing process.

[0037] Figures 5 to 7 This is a schematic diagram of a mask manufacturing process according to an embodiment of the present invention.

[0038] Figure 8This is a schematic diagram of the mask etching degree in a comparative example of the present invention.

[0039] Figure 9 This is a schematic diagram of the mask etching degree according to an embodiment of the present invention.

[0040] Figure 10 This is a schematic diagram of adjusting the cone angle according to an embodiment of the present invention.

[0041] Figures 11 to 16 This is a schematic diagram of the frame manufacturing process according to an embodiment of the present invention.

[0042] Figures 17 to 19 This is a schematic diagram of the frame manufacturing process according to another embodiment of the present invention.

[0043] Figure 20 This is a schematic diagram of the stretched state of a unit sheet and a moving plate based on process temperature changes according to an embodiment of the present invention.

[0044] Figures 21 to 22 This is a schematic diagram of the manufacturing process of a unit sheet section according to an embodiment of the present invention.

[0045] Figure 23 This is a schematic diagram of the unit pattern of a unit sheet portion according to an embodiment of the present invention.

[0046] Figure 24 This is a schematic diagram of a unit sheet portion of the present invention with a mask connected to it.

[0047] Figure 25 This is an electron microscope photograph of a unit pattern according to an embodiment of the present invention.

[0048] [Explanation of the labels in the attached diagram]

[0049] 10: The connection between the mask and the frame

[0050] 80: Suction cup 90: Moving plate

[0051] 95: Temporary adhesive layer, dry film resist layer; 100: Mask

[0052] 110: Mask film, metal sheet; 200: Frame

[0053] 210: Edge frame section; 220: Unit sheet section

[0054] 220': Metal sheet for manufacturing unit sheet section

[0055] 220″: Metal sheet raw material for unit sheet manufacturing (before thickness reduction)

[0056] 221: Edge sheet section; 223: First grid sheet section

[0057] 225: Second grid sheet section; 1000: OLED pixel deposition apparatus

[0058] C: Unit, mask unit

[0059] Ca, Cb, Cc: Pattern of Unit 1, Pattern of Unit 2, Pattern of Unit 3

[0060] CP: Unit pattern; CR: Mask unit area

[0061] Ma, Mb, Mc: First insulating part

[0062] R: Hollow area of ​​the edge frame; P: Mask pattern

[0063] P1, P1-1, P1-2: First mask pattern

[0064] P2, P2-1, P2-2: Second mask pattern Detailed Implementation

[0065] For a detailed description of the invention that follows, reference may be made to the accompanying drawings illustrating specific embodiments in which the invention may be implemented. These embodiments are described in detail below to enable those skilled in the art to implement the invention. These embodiments are described in sufficient detail to enable those skilled in the art to implement the invention. Various embodiments of the invention should be understood to be different from each other but not mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented as other embodiments without departing from the spirit and scope of the invention. Furthermore, the position or arrangement of individual components in each disclosed embodiment should be understood to be subject to change without departing from the spirit and scope of the invention. Therefore, the following detailed description is not intended to limit the invention; the scope of the invention is defined only by the appended claims and all their equivalents, provided that it can be properly explained. Similar reference numerals in the drawings denote the same or similar functions in various respects, and for convenience, lengths, areas, thicknesses, etc., and their shapes may be exaggerated.

[0066] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to enable those skilled in the art to readily implement the present invention.

[0067] Figure 1 This is a front view of a frame-integrated mask according to an embodiment of the present invention. Figure 1 [a] and side section view [ Figure 1 (b)]. Figure 2 This is a front view of a frame according to an embodiment of the present invention. Figure 2 [a] and side section view [ Figure 2 (b)].

[0068] The following description describes the structure of the mask-frame connector (or the frame-integrated mask), but the structure and manufacturing process of the mask-frame connector can be understood to include the entire contents of Korean Patent Application No. 2018-0016186.

[0069] Reference Figure 1 as well as Figure 2 The mask-frame connector 10 (or a frame-integrated mask) may include multiple masks 100 and a frame 200. In other words, it is a configuration in which multiple masks 100 are respectively connected to the frame 200. For ease of explanation, the following description uses a four-cornered mask 100 as an example. However, before the mask 100 is attached to the frame 200, it may be a strip-shaped mask with protrusions on both sides for clamping. After being attached to the frame 200, the protrusions can be removed.

[0070] Multiple mask patterns P are formed on each mask 100, and one unit C can be formed on each mask 100. One mask unit C can correspond to a display such as a smartphone.

[0071] The mask 100 can also be made of materials such as invar, super invar, nickel (Ni), or nickel-cobalt (Ni-Co). The mask 100 can be made of metal sheet produced by rolling or electroforming.

[0072] The frame 200 can be formed in the form of connecting multiple masks 100. Considering thermal deformation, the frame 200 is preferably formed of a material such as Invar alloy, super Invar alloy, nickel, or nickel-cobalt, which has the same coefficient of thermal expansion as the masks. The frame 200 may include an edge frame portion 210 that is approximately square or rectangular. The interior of the edge frame portion 210 may be hollow.

[0073] Additionally, the frame 200 has multiple mask unit regions CR and may include unit sheet portions 220 connected to the edge frame portion 210. The unit sheet portion 220 may consist of an edge sheet portion 221, a first grid sheet portion 223, and a second grid sheet portion 225. The edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 refer to portions divided on the same sheet, and they are integrally formed with each other.

[0074] The thickness of the edge frame portion 210 can be greater than the thickness of the unit sheet portion 220, and can be formed with a thickness of several millimeters to several centimeters. Although the thickness of the unit sheet portion 220 is thinner than the thickness of the edge frame portion 210, it is thicker than the mask 100, and can be approximately 0.1 mm to 1 mm. The width of the first grid sheet portion 223 and the second grid sheet portion 225 can be approximately 1 to 5 mm.

[0075] In the planar sheet, multiple mask unit regions CR (CR11 to CR56) can be provided, excluding the areas occupied by the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225. In this specification, an example of forming 6×5 mask unit regions CR (CR11 to CR56) will be described. Five first grid sheet portions 223 and four second grid sheet portions 225 can exist.

[0076] The frame 200 has multiple mask unit regions CR, and each mask 100 can be attached in such a way that each mask unit C corresponds to each mask unit region CR. The mask unit C corresponds to the mask unit region CR of the frame 200, and part or all of the dummy part can be attached to the frame 200 (unit sheet part 220). Thus, the mask 100 and the frame 200 can form an integral structure.

[0077] The specific manufacturing process of Frame 200 will be... Figures 12 to 16 The formation process of the mask unit region CR portion of the unit sheet section 220 will be described in the following section. Figure 21 The description is in the middle.

[0078] Figure 3 This is a schematic diagram of a mask 100 according to an embodiment of the present invention.

[0079] Each mask 100 may include mask units C having multiple mask patterns P formed thereon, and dummy portions around the mask units C (equivalent to the portion of the mask film 110 other than the unit C). The dummy portions may consist only of the mask film 110, or may include mask film 110 having a predetermined dummy portion pattern formed with a shape similar to the mask pattern P. The mask units C correspond to the mask unit regions CR of the frame 200, and part or all of the dummy portions may be attached to the frame 200 (unit sheet portion 220). Thus, the mask 100 and the frame 200 can form an integral structure.

[0080] On the other hand, according to another embodiment, the frame is not manufactured by attaching the unit sheet portion 220 to the edge frame portion 210, but rather a grid frame (equivalent to grid sheet portions 223, 225) is directly formed integrally with the edge frame portion 210 in the hollow region R portion of the edge frame portion 210. This type of frame also includes at least one mask unit region CR, and the mask-frame connector 10 is manufactured by corresponding the mask 100 with the mask unit region CR.

[0081] The manufacturing process of mask 100 will be described below.

[0082] Figure 4 This is a schematic diagram of the existing mask manufacturing process.

[0083] Reference Figure 4 Current mask manufacturing processes only involve wet etching.

[0084] First, such as Figure 4 As shown in (a), a patterned photoresist M can be formed on the planar film 110′ (sheet). Then, as... Figure 4 (b) Wet etching WE can be performed through the spaces between the patterned photoresist M. After wet etching WE, a portion of the space in film 110' is penetrated, thereby forming a mask pattern P'. Then, if the photoresist M is cleaned, film 110' with the mask pattern P' can be formed, thus completing the fabrication of mask 100'.

[0085] like Figure 4 As shown in (b), the existing mask 100' has the problem of inconsistent mask pattern P′ dimensions. Since wet etching (WE) is performed isotropically, the etched shape is approximately arc-shaped. Moreover, since it is difficult to maintain a consistent etching rate for each part during wet etching (WE), the widths R1′, R1″, and R1″′ of the through pattern after penetrating the film 110′ are different. In particular, in patterns with more undercut (UC), not only is the lower width R1″ of the mask pattern P′ wider, but the upper width R2″ is also wider, while in patterns with fewer undercut (UC), the lower widths R1′ and R1″′ and the upper widths R2′ and R2″′ are relatively narrower.

[0086] As a result, the existing mask 100' has the problem of uneven size of each mask pattern P'. For ultra-high-definition OLEDs, the current QHD resolution is 500-600 PPI (pixels per inch), with a pixel size of about 30-50 μm, while 4K UHD and 8K UHD high-definition have higher resolutions of ~860 PPI and ~1600 PPI, respectively. Therefore, even slight size differences can lead to product defects.

[0087] Therefore, the present invention is characterized by improving the pattern accuracy of the insulating mask during wet etching by performing two wet etching processes.

[0088] Figures 5 to 7 This is a schematic diagram of a mask manufacturing process according to an embodiment of the present invention.

[0089] Reference Figure 5 (a) First, a metal sheet 110 for mask manufacturing can be provided. As mentioned above, the material of the metal sheet 110 can be invar, super invar, nickel (Ni), nickel-cobalt (Ni-Co), etc.

[0090] Then, a patterned first insulating portion M1 can be formed on one side (top) of the metal sheet 110. The first insulating portion M1 can be formed from a photoresist material by means of printing or the like.

[0091] The first insulating portion M1 can be a black matrix photoresist or a photoresist material with a metal coating formed on top. The black matrix photoresist can be a material containing a resin black matrix, which is used to form the black matrix of the display panel. The light-shielding effect of the black matrix photoresist is superior to that of ordinary photoresist. Furthermore, the photoresist with a metal coating formed on top can enhance the light-shielding effect against light incident from above using a metal plating solution.

[0092] Then, refer to Figure 5 (b) A first mask pattern P1 of a predetermined depth can be formed on one side (top) of the metal sheet 110 by wet etching WE1. When performing wet etching WE1, it should not penetrate the metal sheet 110. Therefore, the first mask pattern P can be generally formed in an arc shape and does not penetrate the metal sheet 110. That is, the depth value of the first mask pattern P1 can be less than the thickness of the metal sheet 110.

[0093] Due to the isotropic etching characteristics of wet etching WE1, the width R2 of the first mask pattern P1 differs from the spacing R3 between the patterns of the first insulating portion M1, and can be wider than the spacing R3 between the patterns of the first insulating portion M1. In other words, since undercut UCs are formed on the lower parts of both sides of the first insulating portion M1, the width R2 of the first mask pattern P1 can be greater than the width of the undercut UCs compared to the spacing R3 between the patterns of the first insulating portion M1.

[0094] Then, refer to Figure 5(c) A second insulating portion M2 may be formed on one side (top) of the metal sheet 110. The second insulating portion M2 may be formed from a photoresist material by means of a printing method or the like. Since the second insulating portion M2 needs to be retained in the space where the undercut UC is formed, as described later, a positive photoresist material is preferred.

[0095] Since the second insulating portion M2 is formed on one side (top) of the metal sheet 110, a portion of it is formed on the first insulating portion M1, while the other portion fills the interior of the first mask pattern P1.

[0096] The second insulating portion M2 can use photoresist diluted in a solvent. If a high-concentration photoresist solution is formed on the metal sheet 110 and the first insulating portion M1, the high-concentration photoresist solution will react with the photoresist in the first insulating portion M1, potentially causing a portion of the first insulating portion M1 to dissolve. Therefore, in order to avoid affecting the first insulating portion M1, the second insulating portion M2 can use photoresist whose concentration has been reduced by dilution in a solvent.

[0097] Then, refer to Figure 6 (d) A portion of the second insulating portion M2 can be evaporated through soft baking. After the solvent in the second insulating portion M2 is evaporated by baking, only the photoresist component remains. Therefore, a thin portion of the second insulating portion M2' remains on the exposed portion of the first mask pattern P1 and on the surface of the first insulating portion M1, like a coated film. The thickness of the remaining second insulating portion M2' is preferably less than a few μm, so as not to affect the pattern width R3 of the first insulating portion M1 or the pattern width R2 of the first mask pattern P1.

[0098] Then, refer to Figure 6 (e) Exposure L can be performed on one side (top) of the metal sheet 110. When exposure L is performed above the first insulating portion M1, the first insulating portion M1 can act as an exposure mask. Since the first insulating portion M1 is a black matrix photoresist or a photoresist material with a metal coating formed on top, it has excellent light-shielding effect. Therefore, the second insulating portion M2″ located vertically below the first insulating portion M1 [ref] Figure 6 [f] will not be exposed L, while other insulating parts M2' will be exposed L.

[0099] Then, refer to Figure 6(f) If development is performed after exposure L, the portion of the second insulating portion M2″ that was not exposed to L will be retained, while the other portions of the second insulating portion M2' will be removed. Since the second insulating portion M2' is a positive photoresist, the portion exposed to L will be removed. The space where the second insulating portion M2″ is retained can form an undercut UC with the lower sides of the first insulating portion M1 [ref]. Figure 5 The spatial correspondence of step (b)].

[0100] Then, refer to Figure 7 (g) Wet etching WE2 can be performed on the first mask pattern P1 of the metal sheet 110. The wet etching solution penetrates into the space between the patterns of the first insulating portion M1 and the space of the first mask pattern P1 and performs wet etching WE2. The second mask pattern P2 can be formed through the metal sheet 110. That is, it is formed by penetrating from the lower end of the first mask pattern P1 to the other side of the metal sheet 110.

[0101] At this time, a second insulating portion M2″ is retained on the first mask pattern P1. The retained second insulating portion M2″ can act as a mask for wet etching. That is, the second insulating portion M2″ masks the etching solution and prevents the etching solution from etching towards the side of the first mask pattern P1, while etching is performed towards the lower surface of the first mask pattern P1.

[0102] Since the second insulating portion M2″ is arranged within the undercut UC space vertically below the first insulating portion M1, the pattern width of the second insulating portion M2″ substantially corresponds to the pattern width R3 of the first insulating portion M1. Therefore, the second mask pattern P2 is equivalent to wet etching WE2 onto the spacing R3 between the patterns of the first insulating portion M1. Consequently, the width R1 of the second mask pattern P2 can be smaller than the width R2 of the first mask pattern P1.

[0103] Since the width of the second mask pattern P2 defines the width of the pixel, the width of the second mask pattern P2 is preferably less than 35 μm. If the thickness of the second mask pattern P2 is too thick, it is difficult to control the width R1 of the second mask pattern P2, and the uniformity of the width R1 decreases. The overall shape of the mask pattern P may not be conical / inverted conical. Therefore, the thickness of the second mask pattern P2 is preferably less than the thickness of the first mask pattern P1. The thickness of the second mask pattern P2 is preferably close to 0. When considering the pixel size, for example, the thickness of the second mask pattern P2 is preferably about 0.5 to 3.0 μm, more preferably 0.5 to 2.0 μm.

[0104] The shapes of the connected first mask pattern P1 and the second mask pattern P2 can be combined to form mask pattern P.

[0105] Then, refer to Figure 7The mask 100 can be manufactured by removing the first insulating part M1 and the second insulating part M2. The first mask pattern P1 includes an inclined surface, and the second mask pattern P2 is very low in height. Therefore, if the shapes of the first mask pattern P1 and the second mask pattern P2 are combined, the whole will present a conical or inverted conical shape.

[0106] Figure 8 This is a schematic diagram of the mask etching degree in a comparative example of the present invention.

[0107] Reference Figure 8 Because wet etching (WE) is isotropic, the etched shape is approximately arc-shaped. Furthermore, during wet etching, the etching speed of different parts is difficult to be completely uniform. If only one wet etching is performed to penetrate the metal sheet 110 to form the mask pattern, the deviation will be greater. For example, although the wet etching speeds of mask patterns 111 and 112 are different, the difference in the upper width (undercut) is not significant. However, the difference between the lower penetration width PD1 of the metal sheet 110 caused by forming mask pattern 111 and the lower penetration width PD2 of the metal sheet 110 caused by forming mask pattern 112 is much greater than the difference in the upper width. This is a result of the isotropic nature of wet etching. In other words, the width of the pixel size is determined by the lower widths PD1 and PD2 of mask patterns 111 and 112, not the upper width. Therefore, compared to one wet etching, performing two wet etchings makes it easier to control the lower widths PD1 and PD2. Below, Figure 9 The following description uses an embodiment of the present invention as an example.

[0108] Figure 9 This is a schematic diagram of the mask etching degree according to an embodiment of the present invention.

[0109] Figure 9 The process up to (a) and Figure 5 The processes described in (a) to (b) are the same. However, in... Figure 9 In (a), the first mask pattern P1-1 and the first mask pattern P1-2, which exhibit different etching degrees in the wet etching WE1 of the first insulating part M1, are compared and explained.

[0110] Reference Figure 9 (a) Even with the same wet etching WE1-1 and WE1-2, different etching processes will occur depending on the etched portion, as shown in the first mask pattern P1-1 and the first mask pattern P1-2. The pattern width R2-1 of the first mask pattern P1-1 is smaller than the pattern width R2-2 of the first mask pattern P1-2. This difference in pattern width R2-1 and R2-2 will have an adverse effect on the resolution of the pixels.

[0111] Then, refer to Figure 9 (b) It can be confirmed that, in the process of Figure 5 (c) to Figure 6 Following the process described in (f), second insulating portions M2″-1 and M2″-2 are formed in the space vertically below the first insulating portion M1. The sizes of the second insulating portions M2″-1 and M2″-2 will differ depending on the size of the undercut space below the first insulating portion. Although the size of the second insulating portion M2″-1 is smaller than that of the second insulating portion M2″-2, the pattern widths of the second insulating portions M2″-1 and M2″-2 will be equal. The pattern widths of the second insulating portions M2″-1 and M2″-2 can be equal to correspond to the pattern width R3 of the first insulating portion M1.

[0112] Then, refer to Figure 9 (c) The second insulating portions M2″-1 and M2″-2 are used as masks for wet etching and a second wet etching WE2 is performed, thereby penetrating the metal sheet 110. As a result, the deviations in the widths R1-1 and R1-2 of the formed second mask patterns P2-1 and P2-2 are significantly smaller than the deviations in the widths R2-1 and R2-2 of the first mask patterns P1-1 and P1-2. This is because, after the first wet etching of the metal sheet 110 with the depth of the first mask patterns P1-1 and P1-2, a second wet etching is performed on the remaining thickness of the metal sheet 110, and the pattern widths of the second insulating portions M2″-1 and M2″-2 in the second wet etching are substantially equal to the pattern widths of the first insulating portion M1 in the first wet etching.

[0113] As described above, the mask manufacturing method of the present invention has the effect of forming a mask pattern P to the desired size by performing two wet etching processes. In particular, since a portion of the second insulating portion M2″ is retained, the second wet etching is narrower and thinner than the first wet etching, thus providing the advantage of easily controlling the width R1 of the second mask pattern P2. On the other hand, since an inclined surface can be formed by wet etching, a mask pattern P that prevents shading effects can be formed.

[0114] Figure 10 This is a schematic diagram of adjusting the cone angles a1 and a2 according to an embodiment of the present invention.

[0115] Furthermore, the mask manufacturing method of the present invention has the advantage that the mask pattern P, composed of the first mask pattern P1 and the second mask pattern P2, is easy to form a tapered angle. Moreover, the present invention has the effect of easily adjusting the tapered angles a1 and a2. (See reference...) Figure 10(a) If the thickness T1 of the second mask pattern P2 becomes thinner, the cone angle a1 will increase. In other words, if the thickness of the first mask pattern P1 is thick and the thickness T1 of the second mask pattern P2 becomes thinner, the cone angle a1 will increase as a result of isotropic wet etching (R1 is the radius). Conversely, referring to... Figure 10 (b) If the thickness T2 of the second mask pattern P2 increases, the cone angle a2 will decrease. In other words, compared to Figure 10 (a) If the thickness of the first mask pattern P1 is thin and the thickness T2 of the second mask pattern P2 becomes thicker, then the result of isotropic wet etching (R1 is the radius) will be that the cone angle a2 will become larger. Therefore, the present invention has the advantage that the cone angles a1 and a2 can be adjusted by adjusting the thickness of the second mask pattern P2.

[0116] The manufacturing process of the mask and frame connector 10 of the present invention will be further described below.

[0117] Figures 11 to 16 This is a schematic diagram of the frame manufacturing process according to an embodiment of the present invention.

[0118] To manufacture the connector between the mask 100 and the frame 200 (or, a frame-integrated mask), the frame 200 may be provided first. First, the unit sheet portion 220 is manufactured, and the frame 200 is manufactured by connecting the unit sheet portion 220 to the edge frame portion 210. Alternatively, the unit sheet portion 220 may be manufactured and connected to the edge frame portion 210 after the edge frame portion 210 has been prepared.

[0119] Reference Figure 11 Metal sheet 220″ can be prepared for manufacturing the unit sheet portion 220 of frame 200. The material of metal sheet 220″ is the same as that of metal sheet 110 for mask manufacturing [see reference]. Figure 5 Like (a), it can be Invar, Super Invar, Nickel (Ni), Nickel-Co, etc.

[0120] The metal sheet 220″ is used as a unit sheet portion 220 for supporting the mask 100, and its thickness can be greater than that of the mask 100. However, the thicker the metal sheet 220″ is, the more likely it is to have an adverse effect on the shadow effect during the pixel deposition process of organic matter. Therefore, it is required to form it with a thinner thickness within the area supporting the mask 100.

[0121] In addition, a movable plate 90 may be prepared. The movable plate 90 is a medium that allows the first side (lower side) of the metal sheet 220″ to be bonded and moved in a supporting manner. In order to support the metal sheet 220″ as a whole, the movable plate 90 is a flat plate with an area greater than or equal to that of the metal sheet 220″.

[0122] As an example, the width × length of 6G can be approximately 1500mm × 1800mm, and half of 6G can be approximately 1500mm × 900mm. In the connector 10 between the mask 100 and the frame 200 [refer to...] Figure 1 The size of the plurality of masks 100 excluding the edge frame portion 210 and the unit sheet portion 220 to which the plurality of masks 100 are attached can be half the size of 6G. In view of this, the size of the movable plate 90 used to support the unit sheet portion 220 is preferably about 1500mm x 900mm or larger in width x length.

[0123] The movable plate 90 can use laser-transparent materials. Materials such as glass, silica, quartz, alumina (Al2O3), borosilicate glass, and zirconia can be used.

[0124] The movable plate 90 has a large area corresponding to half of 6G, and preferably uses a glass material that is easy to manufacture, easy to process, and low in cost, more preferably borosilicate glass. In particular, borosilicate glass with excellent heat resistance, chemical resistance, mechanical strength, and transparency can be used. 33 of the material. Furthermore, The coefficient of thermal expansion of 33 is approximately 3.3, which is not much different from that of Invar alloy sheet 220″, and has the advantage of being easy to control the coefficient of thermal expansion of sheet 220″.

[0125] A temporary adhesive portion 95 may be sandwiched between the movable plate 90 and the metal sheet 220″. The temporary adhesive portion 95 may employ a device capable of providing adhesive force to bond the metal sheet 220″ to the movable plate 90. In particular, a dry film resist layer 95 (DFR layer) may be provided as the temporary adhesive portion 95. A thin film photoresist may be provided as the dry film resist layer 95. As an example, a soft baking process can be performed at a temperature of approximately 60°C for 60 seconds, followed by direct lamination. While stripping the protective film of the DFR, the photoresist layer of the DFR can be laminated onto the first side (lower side) of the metal sheet 220″. Lamination can be performed at a predetermined roller pressure and a low-temperature process of approximately 60°C or below. Lamination is preferably performed under vacuum. Lamination under vacuum can prevent air bubbles from being trapped at the interface between the dry film resist layer 95 and the metal sheet 220″ / movable plate 90.

[0126] This invention utilizes a dry film resist layer 95 for bonding and lithography processes in a low-temperature region below approximately 60°C, thereby preventing the metal sheet 200″ from deforming due to heat during the processing steps. Furthermore, the use of the dry film resist layer 95 significantly reduces baking and exposure times compared to using liquid photoresist. While baking and exposure for degassing using liquid photoresist requires approximately one hour, using dry film resist only requires about two minutes, thus drastically reducing processing time.

[0127] According to Korean Patent Application No. 2020-0043485 Figure 11 Existing technologies use liquid wax to bond the mask metal film to the substrate supporting it. During use, the liquid wax layer is baked at approximately 100–160°C to vaporize the solvent, and the lamination process is also performed at approximately 110°C. Therefore, in high-temperature regions above 100°C, the mask metal film or metal sheet may experience thermal deformation. Furthermore, liquid photoresist is used separately to form the etching pattern. In other words, existing technologies use both a liquid wax layer and a liquid photoresist layer between the mask metal film and the substrate supporting it.

[0128] Conversely, by using the dry film resist layer 95, the present invention enables bonding processes to be performed in low-temperature regions below approximately 60°C. Furthermore, it eliminates the need for separate liquid wax and liquid photoresist layers, achieving bonding and etching pattern formation solely with the dry film resist layer 95. Moreover, as described later, the dry film resist layer 95 also provides etching resistance and adhesion to the metal sheet 220' during the formation of the third unit pattern Cc.

[0129] in addition, Figure 11 Although not illustrated, it is in Figure 11 The process can also involve adsorption and, for example, in the moving plate 90. Figure 15 The suction cup 80 shown is a similar component, thereby controlling the movement of the movable plate 90.

[0130] In addition, raw materials such as rolled Invar alloy 220″ metal sheets can be supplied in coil form. Since the metal sheet is wound in coil form, the winding direction, i.e., the transverse length, is not limited in length. Conversely, the longitudinal length is equivalent to the width of the coil, so its length is limited. The maximum width of commonly circulated coils is approximately 1040 mm.

[0131] Specifically, the aforementioned movable plate 90 is composed of a large area equivalent to half of 6G, and the size of the metal sheet 220″ bonded thereon can also correspond to the size of the movable plate 90, which is 1500mm × 900mm. The maximum width of the roll is approximately 1040mm. Taking this into consideration, the width direction of the roll can correspond to the longitudinal length of the metal sheet 220″, which is 900mm. The material cut from the roll at a winding direction of approximately 1500mm is used to correspond to the transverse length of the metal sheet 220″.

[0132] As shown above, the metal sheet manufactured using the rolling process at the maximum coil width exceeds the rolling limit by 100μm in the manufacturing process. The thinner the metal sheet 220″, the more the adverse effects of shadows during the pixel deposition process of organic matter can be reduced. It is difficult to reduce the thickness of the rolled coil raw material below the above limit, and additional processes are required to use metal sheets 220″ with a thickness less than the above.

[0133] Reference Figure 12 The metal sheet 220″ can undergo a thickness reduction process PS while bonded to the movable plate 90. The thickness reduction process PS refers to mirror polishing one side (top) of the metal sheet 220″ while removing a portion of the upper part of the metal sheet 220″ to achieve thickness reduction. The thickness reduction process PS can be performed using Chemical Mechanical Polishing (CMP), and any known CMP method can be used. Alternatively, the thickness of the metal sheet 220″ can be reduced using chemical wet etching or dry etching methods. Furthermore, any process for reducing the thickness of the metal sheet 220″ can be used.

[0134] In the PS (Power Splitting) process, for example, the surface roughness (Ra) of the upper surface of the metal sheet 220' can be controlled during CMP (Chemical Metallurgy). Preferably, mirror polishing can be performed to further reduce the surface roughness. Alternatively, as another example, the PS process can be performed by chemical wet etching or dry etching, followed by additional polishing processes such as CMP to further reduce the surface roughness (Ra). The surface roughness (Ra) is preferably less than 0.1 μm (greater than 0). Based on the surface roughness (Rz), it can be less than 1.0 μm. By performing mirror polishing to reduce the surface roughness, subsequent processes (refer to...) Figure 13 The insulating portion MM can be formed more densely and accurately on the upper surface of the metal sheet 220', thereby improving the etching quality in the etching EC process.

[0135] According to another embodiment, the thickness reduction process PS can also be divided into two steps: a surface defect removal process and an etching-based thickness reduction process.

[0136] Surface defect removal processes can utilize any of the following methods capable of precise surface treatment: lapping, polishing, and buffing. The thickness of the 220″ metal sheet can also be reduced through surface defect removal processes. However, based on the initial thickness of the 220″ metal sheet, a reduction of 2.5% to 12.5% ​​is preferred. During the rolling process, rolling marks such as dimples and particle defects like oxides such as SiO2 and Al2O3, as well as foreign matter, are generated while the metal film is being rolled. After removing surface defects such as scratches and particle defects, a thickness reduction process can be performed. Surface defect removal processes are slower than etching-based thickness reduction processes; therefore, they are more efficient when reducing relatively thin thicknesses.

[0137] Next, an etching-based thickness reduction process can be performed. Etching-based thickness reduction can reduce thicknesses by a greater amount than surface defect removal processes. To reduce even greater thicknesses more quickly, etching, particularly wet etching, can be used.

[0138] The thickness reduction process PS can be performed on the moving plate 90. The thickness reduction process PS is performed on a large area metal sheet 220″ corresponding to half of 6G, which is bonded to the moving plate 90. Therefore, the process can be carried out stably and the thinning is uniformly performed on the entire surface of the metal sheet 220″.

[0139] As described above, after the thickness reduction process PS, the thickness of the metal sheet 220' can be reduced to approximately 50–100 μm. However, it is not necessarily limited to this; as long as it is greater than the thickness of the mask 100 to be used and can meet the requirements for supporting the mask 100, it can be reduced to less than 50 μm. For example, given that the thickness of the mask 100 is approximately 2–20 μm, a metal sheet 220' with a thickness reduced to approximately 30–80 μm can be used.

[0140] Then, refer to Figure 13 Patterned insulating portions MM can be formed on the metal sheet 220'. The insulating portions MM can be formed from photoresist material using methods such as printing.

[0141] Next, the metal sheet 220' can be etched EC. Etching can be performed using methods such as dry etching or wet etching, with no particular limitations. The etching result is that the portion of the metal sheet 220' exposed in the empty space between the insulating portions MM is etched. The etched portion of the metal sheet 220' can be the size of the mask unit region CR, the size of the mask 100, or the size of the OLED pixel forming display.

[0142] Then, refer to Figure 14 The insulating portion MM can be removed. After etching EC, the metal sheet 220' can be a metal sheet 220 having an edge sheet portion 221, a first grid sheet portion 223, and a second grid sheet portion 225. The movable plate 90 can be provided with unit sheet portions 220 bonded thereon and a temporary adhesive portion 95 [or, a dry film resist layer 95] sandwiched between them, wherein the edge sheet portion 221, the first grid sheet portion 223, and the second grid sheet portion 225 are formed on the unit sheet portion 220.

[0143] Then, refer to Figure 15 The movable plate 90, which is bonded to and supports the unit sheet portion 220, can be loaded onto the edge frame portion 210. The movable plate 90 can be moved by a suction cup (not shown). As an example, the movable plate 90 is moved by using a suction cup 80 to pick up the opposite side of the side of the movable plate 90 to which the unit sheet portion 220 is bonded.

[0144] The unit sheet portion 220 can contact and correspond to the edge frame portion 210. That is, the edge sheet portion 221 of the unit sheet portion 220 can contact and correspond to the upper surface of the edge frame portion 210. By mounting the movable plate 90 onto the edge frame portion 210, the unit sheet portion 220 can be corresponding to the edge frame portion 210. Since the movable plate 90 presses against the unit sheet portion 220, the unit sheet portion 220 and the edge frame portion 210 can be tightly abutted.

[0145] Next, a laser L is irradiated between the unit sheet portion 220 [or the edge sheet portion 221] and the edge frame portion 210, and the unit sheet portion 220 can be connected to the edge frame portion 210 based on laser welding. A weld bead WB is generated between the laser-welded edge sheet portion 221 and the edge frame portion 210, and the edge sheet portion 220 can be connected to the edge frame portion 210 through the weld bead WB.

[0146] Then, refer to Figure 16After the unit sheet portion 220 and the edge frame portion 210 are connected, the movable plate 90 can be separated from the unit sheet portion 220. Separation of the unit sheet portion 220 from the movable plate 90 can be achieved by heating, chemically treating, applying ultrasound, or applying ultraviolet light to the temporary adhesive portion 95 [or the dry film resist layer 95]. By heating, chemically treating, applying ultrasound, or applying ultraviolet light to the temporary adhesive portion 95, the adhesive force between the unit sheet portion 220 and the movable plate 90 is weakened, thereby separating the movable plate 90 from the unit sheet portion 220. After separating the movable plate 90, any remaining temporary adhesive portion 95 in the unit sheet portion 220 can be removed by cleaning or other methods.

[0147] Therefore, as Figure 16 (a) [lateral section view], Figure 16 As shown in (b) [front view], the configuration for connecting the unit sheet portion 220 to the edge frame portion 210 is completed. It can be provided as a frame 200.

[0148] According to another embodiment, the edge sheet portion 221 and the edge frame portion 210, after being welded, can be connected using a metal connector instead of laser welding. For example... Figure 15 As shown, a movable plate 90, on which the unit sheet portion 220 is bonded and supported, can be loaded onto the edge frame portion 210. At this time, a metal connecting portion (not shown) can be sandwiched between the unit sheet portion 220 [or the edge sheet portion 221] and the edge frame portion 210. The metal connecting portion (not shown) can be formed on the lower surface of the edge sheet portion 221 facing the edge frame portion 210. Alternatively, the metal connecting portion (not shown) can be formed on the upper surface of the edge frame portion 210 facing the edge sheet portion 221.

[0149] The metal connection may include at least one material selected from Cu, Ni, Au, Ag, Al, Sn, In, Bi, Zn, Sb, Ge, and Cd. The metal connection is preferably formed using sputtering, brazing, or other methods that are not limited by material and are easy to form a thin film, but is not limited thereto.

[0150] Next, at least one of heat or pressure can be applied to the metal connection portion. The unit sheet portion 220 and the metal connection portion, i.e., the edge frame portion 210, can be heated and heat-treated. Alternatively, by heating the unit sheet portion 220, the metal connection portion, and the edge frame portion 210 while applying pressure, heat treatment can be performed by applying a smaller amount of heat.

[0151] Heat treatment based on the application of heat and pressure can be performed within the range where the metal connector can connect the unit sheet portion 220 and the edge frame portion 210. As an example, the metal of the metal connector can be melted and then resolidified after heat treatment to tightly connect the unit sheet portion 220 and the edge frame portion 210. As another example, the interface state of the unit sheet portion 220 and the edge frame portion 210 can be changed and connected by the diffusion of the metal composition of the metal connector into the unit sheet portion 220 and the edge frame portion 210, or conversely, the diffusion of the composition of the unit sheet portion 220 and the edge frame portion 210 into the metal connector, or the mutual diffusion of the composition.

[0152] The heat treatment can be carried out at a temperature of about 200°C to 800°C, more preferably in the low-temperature range of about 200°C to 400°C.

[0153] After the unit sheet portion 220 and the edge frame portion 210 are connected, the movable plate 90 can be separated from the unit sheet portion 220. The above-described movable plate 90 separation process can be directly used.

[0154] Figures 17 to 19 This is a schematic diagram of the frame manufacturing process according to another embodiment of the present invention. The following only describes the process of manufacturing the frame according to another embodiment of the present invention. Figures 11 to 16 The different parts of the embodiments described herein will be explained.

[0155] like Figure 12 As shown, a laminate can be prepared, which is formed by bonding a thinned metal sheet 220' onto a movable plate 90. Next, as... Figure 17 As shown in (a), a second thickness reduction process PS2 can be further performed on a specific portion of the metal sheet 220'. This specific portion can correspond to Figure 15 The contact portion between the edge frame portion 210 and the edge sheet portion 221 described herein. Alternatively, this specific portion may correspond to the portion where weld beads WB are generated based on laser L welding, or it may correspond to the portion applied to clamping metal connection portions (not shown). The connection portion 227 may be formed in the specific portion or edge portion of the metal sheet 220' using a step formed based on the second thickness reduction process PS2.

[0156] As described above, the thickness of the unit sheet portion 220 is approximately 50 to 100 μm, which can be greater than the thickness of the mask 100. During the process of welding the unit sheet portion 220 to the edge frame portion 210, the thickness may make it difficult to generate solder beads (WB) between the edge frame portion 210 and the edge sheet portion 221. Therefore, by using the second thickness reduction process PS2, the portion [connection portion 227] used to generate solder beads (WB) is further thinned, thereby making the connection between the edge frame portion 210 and the edge sheet portion 221 smoother.

[0157] In addition, such as Figure 17As shown in (b), the second thickness reduction process PS2 is as follows Figure 13 As shown, the process can also be performed at the contact portion between the edge frame portion 210 and the edge sheet portion 221 after the mask unit region CR is formed by etching EC.

[0158] Then, as Figure 18 As shown, a movable plate 90, to which the unit sheet portion 220 is bonded and supported, can be mounted on the edge frame portion 210. The connecting portion 227 of the unit sheet portion 220 can contact and correspond to the upper surface of the edge frame portion 210. Next, a laser L is irradiated between the connecting portion 227 of the unit sheet portion 220 and the edge frame portion 210, and the unit sheet portion 220 can be connected to the edge frame portion 210 based on laser welding. A weld bead WB is generated between the laser-welded edge sheet portion 221 [or connecting portion 227] and the edge frame portion 210, and the unit sheet portion 220 can be connected to the edge frame portion 210 through the weld bead WB.

[0159] Then, refer to Figure 19 After connecting the unit sheet portion 220 and the edge frame portion 210, the movable plate 90 can be separated from the unit sheet portion 220. Figure 19 Based on this, except for the connecting portion 227, the lower surface of the edge sheet portion 221 and the lower surface of the first grid sheet portion 223 and the second grid sheet portion 225 may be provided with a frame 200, which is arranged in the hollow region CR of the edge frame portion 210.

[0160] Additionally, according to yet another embodiment, the metal sheet 220″ can also be subjected to a thickness reduction process PS on both sides instead of just one side. In this case, firstly, as... Figure 12 As shown, a first thickness reduction process can be performed on one side (the first side, i.e., the upper side) of the metal sheet 220″ on the first movable plate 90. Next, it is flipped over, and after a temporary adhesive part 95 is clamped onto the second movable plate 90, one side (the first side) of the metal sheet 220″ can be bonded. Next, as... Figure 16 As described above, the first movable plate 90 is separated from the metal sheet 220″ by heating, chemical treatment, applying ultrasound, or applying ultraviolet light, thereby providing the metal sheet 220″ bonded to the second movable plate 90. Next, a second thickness reduction process is performed from above on the opposite side (second side) of the side bonded to the second movable plate 90 (first side). Thus, the metal sheet 220″ can be provided in a state where both sides have undergone a thickness reduction process (PS) and are bonded to the second movable plate 90.

[0161] The metal sheet 220″ produced by the rolling process typically has irregular grain shapes and longer orientation along the rolling direction on its surface compared to its central portion. As described above, the metal sheet 220″ subjected to a thickness reduction process PS on both sides has the advantage of having a central portion with uniform grains, similar to the metal sheet 220″ used as raw material. Therefore, when etching the mask unit region CR, etching errors caused by differences in grain morphology can be reduced, resulting in a more accurate and refined realization of the shape of the mask unit region CR.

[0162] Figure 20 This is a schematic diagram of the stretched state of a unit sheet and a moving plate based on process temperature changes according to an embodiment of the present invention.

[0163] In the prior art, during the process of aligning the unit sheet portion 220 to the edge frame portion 210, all sides of the unit sheet portion 220 are first stretched to make the unit sheet portion 220 flat and unfolded, and then the edge sheet portion 221 is aligned to the edge frame portion 210. Then, the process of connecting the edge sheet portion 221 to the edge frame portion 210 is performed. Furthermore, after stretching and attaching the planar sheet to the edge frame portion 210, the mask unit area CR portion can be removed by laser scribing, etching, etc., to form the unit sheet portion 220. However, the existing method directly stretches the sides of the unit sheet portion 220 by connecting a clamping device such as a jig, thus causing a problem of increased alignment error between the mask unit areas CR.

[0164] In contrast, the present invention forms the mask unit region CR by bonding and supporting the metal sheet 220' on the movable plate 90, without stretching the manufactured unit sheet 220. The supporting unit sheet 220 is connected to the edge frame portion 210 by bonding and supporting it through the movable plate 90, thereby reducing alignment errors.

[0165] This invention does not employ a clamping device, such as a jig, directly connected to the side of the unit sheet 220 for stretching. Instead, it utilizes the difference in thermal expansion coefficients between the moving plate 90 and the metal sheet 220' to apply an internal tensile force to the metal sheet 220' on the moving plate 90 simply by controlling the temperature. The large-area metal sheet 220' can be subjected to the same tensile force in all directions or radial directions on the large-area moving plate 90. Referring to the following... Figure 20 The action of the metal sheet 220' in contact with the moving plate 90 will be explained.

[0166] According to one embodiment, such as Figure 20 As shown, the degree of stretching or the tensile force IT of the metal sheet 220′ can be controlled by controlling the process temperature. Figure 20In (a), in order to compare the degree of extension and retraction of the metal sheet 220' and the movable plate 90, the initial lengths are the same, but the movable plate 90 can be greater than or equal to the length of the metal sheet 220', or vice versa.

[0167] Reference Figure 20 (a) The movable plate 90 and the metal sheet 220′ [or the unit sheet portion 220 with the mask unit region CR formed] are prepared at a room temperature (RT) of about 25°C. Figure 20 Taking the example of metal sheet 220' being made of Invar alloy and moving plate 90 being made of quartz, which has a lower coefficient of thermal expansion than Invar alloy, as an example, a temporary adhesive portion 95 [or dry film resist layer 95] may be formed on one side of moving plate 90 or / and metal sheet 220'.

[0168] Next, refer to Figure 20 (b) can raise the process temperature to achieve a push-pull strength of 0–5 kgf / cm² for the temporary bond. 2 The first process temperature TS1 is approximately 50–70°C. At the first process temperature TS1, the temporary adhesive strength is 0–5 kgf / cm². 2 At this time, the temporary adhesive portion 95 does not have the adhesive force to bond the metal sheet 220' and the movable plate 90. That is, the temporary adhesive portion 95 is in a non-adhesive state, that is, the metal sheet 220' and the movable plate 90 are not easily bonded. This can be understood as the degree to which the metal sheet 220' can be easily separated from the movable plate 90 even without load or external force. Thus, the metal sheet 220' and the movable plate 90 are only in a state where the temporary adhesive portion 95 [and the first insulating portion 23] are sandwiched in the middle and in contact, but are not actually bonded. The metal sheet 220' can be linearly stretched as the temperature rises without being hindered by the temporary adhesive portion 95. Moreover, the coefficient of thermal expansion of the movable plate 90 is lower than that of the metal sheet 220', so at the first process temperature TS1, the stretching degree L1 of the metal sheet 220' can be greater than the stretching degree L2 of the movable plate 90.

[0169] Next, refer to Figure 20 (c) In the state where the metal sheet 220' is in contact with the moving plate 90, the process temperature can be reduced to such that the adhesive strength of the temporary adhesive portion 95 is at least greater than 5 kgf / cm. 2The second process temperature TS2 is located approximately 40 to 60°C lower than the first process temperature TS1, but can be higher than room temperature. At the second process temperature TS2, as the temporary adhesive portion 95 exhibits adhesive force, the metal sheet 220' and the movable plate 90 can be bonded together. As the temperature decreases, the movable plate 90 can shrink (L2->L3), and the metal sheet 220' shrinks accordingly.

[0170] However, the process temperature from Figure 20 When the temperature drops from step (b) to step (c) (TS1 -> TS2), the temporary adhesive portion 95 cools and hardens first, while the temperature of the metal sheet 220' decreases more slowly than that of the temporary adhesive portion 95. Therefore, the metal sheet 220' can be bonded to the moving plate 90 in a stretched state. In other words, compared to directly raising the temperature from room temperature RT to the second process temperature TS2 and then bonding the metal sheet 220' to the moving plate 90, as... Figure 20 As shown, by adding a step of raising the temperature to the first process temperature TS1 between the room temperature RT and the second process temperature TS2, the metal sheet 220' can be bonded to the moving plate 90 in a further stretched state. After directly raising the temperature from room temperature RT to the second process temperature TS2, when bonding the metal sheet 220' to the moving plate 90, the temporary adhesive portion 95 has a considerable adhesive force. Therefore, the metal sheet 220' is hindered by the temporary adhesive portion 95, and may not exhibit linear stretching as the temperature rises. The further stretching of the metal sheet 220' corresponds to a further increase in the tensile force IT contained in the metal sheet 220' supported on the moving plate 90. This means that after the unit sheet portion 220 is attached to the edge frame portion 210 in a subsequent process, the unit sheet portion 220 can have a further expanded state.

[0171] However, it should be noted that this does not refer to excluding the process of bonding the metal sheet 220' to the moving plate 90 after directly raising the temperature from room temperature RT to the second process temperature TS2.

[0172] Next, refer to Figure 20 (e) allows the process temperature to be raised to room temperature RT. As the temperature decreases, the moving plate 90 can retract (equivalent to L3), and the metal sheet 220' also retracts accordingly. The moving plate 90 can return to its original position. Figure 20 The length of (a) in the initial room temperature RT state, while the metal sheet 220' is bonded and fixed to the movable plate 90 in a state stretched L5 compared to the initial room temperature RT state. The degree of stretching L5 and the tensile force IT contained in the metal sheet 220' are greater than the process of bonding the metal sheet 220' to the movable plate 90 after directly rising from room temperature RT to the second process temperature TS2.

[0173] In addition, Figure 20 Between steps (c) and (e), a process can be performed to lower the process temperature to a process temperature TS3 below room temperature RT. Then, the temperature can be raised back to room temperature RT. As the temperature drops to the process temperature TS3, the moving plate 90 further shrinks L4 compared to its room temperature state, and the metal sheet 220' shrinks accordingly. The process temperature TS3 can be approximately 5–15°C. Furthermore, the duration of maintaining the process temperature TS3 can be at least equal to or greater than [a certain value]. Figure 20 The process temperatures TS1 and TS2 in (b) and (c) are maintained for a duration of 1 minute. For example, if the maintenance time of TS1 is 1 minute and the maintenance time of TS2 is 1 minute, then the maintenance time of TS3 can be 2 minutes or more. As described above, by rapidly lowering the temperature rather than gradually lowering it, the tackiness of the temporary adhesive portion 95 can be increased, and the adhesive strength can also be increased. As the viscosity of the temporary adhesive portion 95 is maximized, the metal sheet 220' is more firmly bonded to the moving plate 90. Figure 20 The length of the metal sheet 220' further stretched in step (b) is maintained even after the temperature drops.

[0174] The Figure 20 This is based on an embodiment in which an internal tensile force IT is provided to the metal sheet 220' on the moving plate 90 through temperature control, but it is not limited to this, and other temperature control methods can also be used to provide an internal tensile force IT to the metal sheet 220'.

[0175] According to another embodiment, the metal sheet 220' can be made of Invar alloy material, and the movable plate 90 can be made of a material with a coefficient of thermal expansion greater than that of Invar alloy. 33. In this case, compared to Figure 20 In one embodiment, temperature control can be performed in reverse. First, the process temperature can be lowered to a temperature at least below room temperature (20±5°C). The temperature below room temperature can include the range from below zero to room temperature.

[0176] In the next step, the metal sheet 220' and the movable plate 90 can be bonded together by a temporary adhesive part 95 with a dry film anti-corrosion layer material sandwiched between them.

[0177] The next step is to raise the process temperature to room temperature. During this process, the moving plate 90, with its higher coefficient of thermal expansion, stretches more than the metal sheet 220'. Since the metal sheet 220' is bonded to the moving plate 90, the moving plate 90 stretches further relative to the metal sheet 220', thus allowing tensile forces to be applied to all lateral directions of the metal sheet 220'. The metal sheet 220' can then be bonded and supported on the moving plate 90 under the applied lateral tensile forces.

[0178] According to another embodiment, if the metal sheet 220' is stretched and then bonded directly onto the movable plate 90, the large-area movable plate 90 may bend due to the tensile force of the large-area metal sheet 220'. If the metal sheet 220' [or unit sheet portion 220] is bonded to the movable plate 90, there is a possibility that it bends in a concave shape in the direction of the metal sheet 220'. That is, there is a possibility that the lower movable plate 90 bends downward. In this case, after flipping the movable plate 90 and aligning it with the edge frame portion 210, the upwardly bent movable plate 90 is flattened by its own weight while applying pressure to the bonded metal sheet 220' [or unit sheet portion 220], causing the bent portion to flatten together. As a result, the metal sheet 220' [or unit sheet portion 220] can be connected to the edge frame portion 210 in a taut state.

[0179] Based on this, Figure 15 The suction cup 80 described herein may further include a heating device. The suction cup 80 generates heat, which is then transferred to the metal sheet 220' and the movable plate 90, such as... Figure 20 As described above, the metal sheet 220' can also be stretched based on temperature control.

[0180] Furthermore, unlike the process described above where mask patterns P are formed at minute dimensions, the precise alignment of multiple mask unit regions CR along the X and Y axes is paramount in the unit sheet section 220. The OLED pixel-forming organic material passing through one mask unit region CR forms a pixel for a display after passing through multiple mask patterns P of the mask 100. In other words, different mask unit regions CR can correspond to different displays. To ensure the mass production quality of OLED pixels, the X and Y axis length errors between mask unit regions CR should be within approximately ±30 to 40 μm. With the development of OLED technology, bezel minimization has become a trend. To minimize bezel width, the edge width of the periphery of the mask 100 through which the pixel-forming organic material passes, i.e., the mask unit region CR, needs to be more constant.

[0181] Furthermore, if wet etching is performed during the formation of the mask unit region CR in the unit sheet section 220, it will be as follows: Figure 8 As described above, in isotropic etching, the size difference of the mask unit region CR inevitably increases as the etchant enters the face and the opposite face. Based on the consideration of minimizing the border, the dead space needs to be minimized at the edges of the mask unit region CR during wet etching.

[0182] Therefore, the manufacturing method that can reduce edge errors between mask unit regions (CR) and minimize dead zones will be explained below.

[0183] Figures 21 to 22This is a schematic diagram of the manufacturing process of a unit sheet section according to an embodiment of the present invention. Figure 23 This is a schematic diagram of the unit pattern of a unit sheet portion according to an embodiment of the present invention.

[0184] For ease of explanation, the following explanation will take the formation of one mask unit region CR in the unit sheet section 220 as an example. However, it can also be understood that multiple mask unit regions CR need to be formed at the same time.

[0185] Reference Figure 21 (a) First, metal sheet 220' for manufacturing the unit sheet portion 220 of frame 200 can be prepared. For example... Figure 12 As described above, the metal sheet 220' may be bonded to the movable plate 90 with a temporary adhesive portion 95 [or a dry film resist layer 95] sandwiched between them.

[0186] The metal sheet 220' is used as a unit sheet portion 220 for supporting the mask 100, and its thickness can be greater than that of the mask 100. According to one embodiment, the thickness of the metal sheet 220' can be approximately 70 μm to 200 μm. The thickness of the metal sheet 220' can be at least twice the thickness of the mask 100. In addition, within the range of thicknesses greater than or twice the thickness of the mask 100, the thickness of the metal sheet 220' can also be determined to be approximately 50 μm to 200 μm. As an example, when the thickness of the mask 100 is approximately 2 μm to 50 μm, the thickness of the metal sheet 220' is several to tens of times greater, and the width of the mask unit region CR [or, unit pattern CP] is tens to hundreds of mm, which is also much larger than the width of the mask pattern P, which is around tens of μm. Therefore, the wet etching process also needs to be performed in a different manner to form the mask unit region CR [or, unit pattern CP]. Therefore, the unit sheet portion 220 employs a process that forms at least three unit patterns Ca, Cb, and Cc. Below, given a thickness of approximately 150 μm, the process will be described using the formation of a mask unit region CR using three unit patterns Ca, Cb, and Cc as an example. However, depending on the thickness of the unit sheet portion 220, by adding an etching process, the mask unit region CR can also be formed using at least four unit patterns.

[0187] A patterned first insulating portion Ma can be formed on one side (top) of the metal sheet 220'. The first insulating portion Ma can be formed from a photoresist material by means of printing or the like. The material and formation method of the first insulating portion Ma can be adopted. Figure 5 The formation process of the first insulating part M1 of (a).

[0188] Then, refer to Figure 21(b) A first unit pattern Ca of a predetermined depth can be formed on one side (top) of the metal sheet 220 by a first wet etching WEa. When performing the first wet etching WEa, the metal sheet 220 should not be penetrated. Therefore, the first unit pattern Ca can be formed to not penetrate the metal sheet 220'a and to be generally arc-shaped.

[0189] Due to the isotropic etching characteristics of the first wet etching WEa, the width Rb of the first unit pattern Ca is not equal to the width Ra of the spacing between the patterns of the first insulating portion Ma, and is greater than the width Ra of the spacing between the patterns of the first insulating portion Ma. In other words, since undercuts are formed on both sides of the lower part of the first insulating portion Ma, the width Rb of the first unit pattern Ca can be greater than the width of the undercut UC compared to the spacing Ra between the patterns of the first insulating portion M1. The spacing Ra between the patterns can roughly correspond to the width of the mask unit region CR [or, unit pattern CP], which is equivalent to tens of mm to hundreds of mm.

[0190] The formation depth of the first unit pattern Ca can be approximately 60% to 70% of the thickness of the metal sheet 220'. As an example, when a metal sheet 220' with a thickness of approximately 150 μm is used, the formation depth of the first unit pattern Ca can be approximately 90 to 105 μm. Therefore, the difference between the width Rb of the undercut first unit pattern Ca and the spacing Ra between the patterns of the first insulating portion Ma can be equal to or less than the formation depth of the first unit pattern Ca.

[0191] Then, refer to Figure 21 (c) , at least in the first unit pattern Ca, a second insulating portion Mb can be formed. The process of forming the second insulating portion Mb in the state where the first unit pattern Ca is formed can be adopted as follows: Figure 5 (c) and Figure 6 The process described in (f). After forming the second insulating portion Mb on one side (top) of the metal sheet 220'c and baking and evaporating a portion of the second insulating portion Mb, exposure L is performed from above so that the first insulating portion Ma can be used as an exposure mask. Since the second insulating portion Mb is a positive photoresist, the portion exposed L is removed. The space retaining the second insulating portion Mb corresponds to the spaces on both sides of the lower part of the first insulating portion Ma used to form undercuts [see reference]. Figure 5 (b) step). The spacing Ra between the patterns of the second insulating part Mb can be equal to the spacing Ra between the patterns of the first insulating part Ma.

[0192] Then, refer to Figure 22(d) A second wet etching WEb can be performed on the first unit pattern Ca of the metal sheet 220'b. The wet etching solution can penetrate into the space between the patterns of the first insulating portion Ma and the space of the first unit pattern Ca to perform the second wet etching WEb. The second unit pattern Cb can be formed to a predetermined depth using the second wet etching WEb. When performing the second wet etching WEb, the metal sheet 220'a should not be penetrated. Therefore, the second unit pattern Cb can be formed to not penetrate the metal sheet 220'b and to be generally arc-shaped.

[0193] Due to the isotropic etching characteristics of the second wet etching WEb, the width Rc of the second unit pattern Cb is not equal to the spacing Ra between the patterns of the second insulating portion Mb, and is greater than the width of the spacing Ra between the patterns of the second insulating portion Mb. In other words, since undercuts are formed on both sides of the lower part of the second insulating portion Mb, the width Rc of the second unit pattern Cb can be greater than the width of the undercut compared to the spacing Ra between the patterns of the second insulating portion Mb.

[0194] The formation depth of the second unit pattern Cb can be approximately 20% to 30% of the thickness of the metal sheet 220'. As an example, when a metal sheet 220' with a thickness of approximately 150 μm is used, the formation depth of the second unit pattern Cb can be approximately 30 to 45 μm. Therefore, the difference between the width Rc of the undercut second unit pattern Cb and the spacing Ra between the patterns of the second insulating portion Mb can be equal to or less than the formation depth of the second unit pattern Cb.

[0195] Furthermore, the formation depth of the first unit pattern Ca is greater than the formation depth of the second unit pattern Cb, and the difference between the width Rb of the first unit pattern and the spacing Ra between the first insulating part Ma or the second insulating part Mb pattern can be greater than the difference between the width Rc of the second unit pattern and the spacing Ra between the first insulating part Ma or the second insulating part Mb pattern.

[0196] Then, refer to Figure 22 (e) , at least in the second unit pattern Cb, the third insulating portion Mc can be formed. The process of forming the third insulating portion Mc while the second unit pattern Cb is formed can be compared with... Figure 21 The formation process of the second insulating portion Mb described in (c) is the same. The space reserved for the third insulating portion Mc can correspond to the spaces on both sides of the lower part of the second insulating portion Mb used to form the undercut. The spacing Ra between the patterns of the third insulating portion Mc can be equal to the spacing Ra between the patterns of the first insulating portion Ma.

[0197] Then, refer to Figure 22(f) A third wet etching WEc can be performed on the second unit pattern Cb of the metal sheet 220'b. The wet etching solution can penetrate into the space between the third insulating portion Mc patterns and the space of the second unit pattern Cb to perform the third wet etching WEb. The third unit pattern Cc can be formed by using the third wet etching WEc to penetrate the metal sheet 220'b. That is, the third unit pattern Cc can be formed by forming an opening from the lower end of the second unit pattern Cb through the other side of the metal sheet 220'c.

[0198] Furthermore, in the prior art, when liquid wax or photoresist is used to bond the movable plate 90 to the metal sheet 220', the portion of the metal sheet 220'c surrounding the third unit pattern Cc cannot adhere tightly to the liquid wax / photoresist layer during the third wet etching WEc process, resulting in lifting. Due to the weak adhesion of the liquid wax / photoresist layer, the lifting portion can further lift. In this case, if the third wet etching solution penetrates between the lifting portions, the desired third unit pattern Cc cannot be formed.

[0199] However, in this invention, the dry film resist layer 95 used to bond the movable plate 90 and the metal sheet 220' has superior adhesion and etch resistance compared to existing liquid wax / photoresist layers. The metal sheet 220' adheres tightly to the dry film resist layer 95 with strong adhesion, thus eliminating any raised portions of the metal sheet 220'c around the third unit pattern Cc. Because there are no raised portions, the desired third unit pattern Cc can be clearly formed.

[0200] Due to the isotropic etching characteristics of the third wet etching WEc, the width Rd of the third mask pattern Cd is not equal to the spacing Ra between the patterns of the third insulating portion Mc, and is greater than the width of the spacing Ra between the patterns of the third insulating portion Mc. In other words, because undercuts are formed on both sides of the lower part of the third insulating portion Mc, the width Rd of the third unit pattern Cc can be greater than the spacing Ra between the patterns of the third insulating portion Mc by the width of the undercut.

[0201] The formation depth of the third unit pattern Cc can be approximately 10% to 20% of the thickness of the metal sheet 220'. As an example, when using a metal sheet 220' with a thickness of approximately 150 μm, the formation depth of the third unit pattern Cc can be approximately 15 μm to 30 μm.

[0202] Furthermore, since the formation depth of the second unit pattern Cb is greater than the formation depth of the third unit pattern Cc, the difference between the width Rc of the second unit pattern and the spacing Ra between the patterns of the first insulating part Ma, the second insulating part Mb and the third insulating part Mc can be greater than the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating part Ma, the second insulating part Mb and the third insulating part Mc.

[0203] Since the lower width of the third unit pattern Cc defines the width of the mask unit region CR, the smaller the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc, the smaller the range of X-axis or Y-axis width error between the mask unit regions CR can be reduced. Therefore, the difference between the width Rd of the third unit pattern and the spacing Ra between the patterns of the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc is preferably about 30 μm or less.

[0204] Then, refer to Figure 23 The manufacturing of the unit sheet portion 220 can be completed by removing the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc. The shapes of the connected first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc can be combined to form a unit pattern CP [or, a mask unit region CR].

[0205] As described above, the thickness Tc of the first unit pattern Ca can be approximately 60% to 70% of the thickness T of the unit sheet portion 220, the thickness Tb of the second unit pattern Cb can be approximately 20% to 30% of the thickness T of the unit sheet portion 220, and the thickness Ta of the third unit pattern Cc can be approximately 10% to 20% of the thickness of the unit sheet portion 220. The sum of the thicknesses of the first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc corresponds to the thickness T of the unit sheet portion 220.

[0206] In another embodiment, the thickness T of the first unit pattern Ca can also be equal to the thickness Tb of the second unit pattern Cb. In this case, the thickness Ta of the third unit pattern Cc is also less than or equal to the thickness Tc of the first unit pattern Ca or the thickness Tb of the second unit pattern Cb, which is more advantageous for reducing the error range of the opening [mask unit region CR] width.

[0207] The two sides of the unit pattern CP [mask unit region CR] are curved. The sides of the first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc can be curved or concave curved. Overall, the two sides of the unit pattern CP can be inclined.

[0208] More specifically, the inclination angles between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane, and between any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc and the horizontal plane, can be non-perpendicular inclination angles. Furthermore, since the thickness of the first unit pattern Ca is greater than the thickness of the second unit pattern Cb, and given the isotropic etching pattern, the inclination angle between any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc and the horizontal plane can be greater than the inclination angle between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane.

[0209] Figure 24 This is a schematic diagram of the shape of a mask 100 connected to a unit sheet portion 220 according to an embodiment of the present invention.

[0210] Reference Figure 24 Solder beads WB1 are formed and connected to the edge frame portion 210 by welding the unit sheet portion 220. Furthermore, solder beads WB2 are formed by welding the mask 100 to each mask unit region CR of the unit sheet portion 220, thereby connecting the mask 100 to the unit sheet portion 220. Figure 24 Based on this, mask 100 can be connected to the upper part of the third unit pattern Cc. That is, the opening width on the third unit pattern Cc can be substantially provided as the mask unit region CR.

[0211] Mask 100 can completely cover the mask unit region CR. Furthermore, only when multiple mask patterns P formed with mask 100 are the units C [refer to...] Figure 3 When located within the width of the mask unit region CR, the dummy part of the mask 100 can be supported on the mask unit region CR. Therefore, the area of ​​the exposed region [width of the opening] of the third unit pattern Cc can be larger than the area of ​​the multiple mask patterns P formed on the mask 100, i.e., unit C.

[0212] The mask unit region CR [or unit pattern CP] has a width of tens to hundreds of mm along the X-axis or Y-axis. Therefore, the organic matter deposited in the OLED pixel deposition process that enters from the central part of the mask unit region CR has a high uniformity. However, there is still a possibility that the organic matter may enter from the edge part of the mask unit region CR. According to one embodiment, the inclination (a3) ​​between any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb and the horizontal plane [refer to...] Figure 23The angle can be less than 50°. That is, during the OLED pixel deposition process, the deposited organic matter can enter the first unit pattern Ca that is first passed through, along a surface with a smaller inclination angle of less than 50° and a wider area [the arrow indicates the direction of entry of the organic matter], thereby reducing the amount of organic matter scattered from the inner wall of the first unit pattern Ca and injected into the center. In contrast, the amount of organic matter entering from the corners of the unit pattern CP increases, so that the organic matter can enter more uniformly throughout the entire area of ​​the mask unit region CR before passing through the mask pattern P of the mask 100.

[0213] In addition, such as Figure 23 As shown, the inclination of any straight line L2 from the upper corner Cb1 of the second unit pattern Cb to the upper corner Cc1 of the third unit pattern Cc with the horizontal plane is greater than the inclination of any straight line L1 from the upper corner Ca1 of the first unit pattern Ca to the upper corner Cb1 of the second unit pattern Cb with the horizontal plane. As a result, the deposited organic matter can begin to enter along the wider surface in the first unit pattern Ca and gradually concentrate towards the edge of the mask unit region CR. Therefore, before passing through the mask pattern P of the mask 100, the organic matter can enter more uniformly throughout the entire area of ​​the mask unit region CR.

[0214] Figure 25 This is an electron microscope photograph of a unit pattern according to an embodiment of the present invention.

[0215] Reference Figure 25 It is known that the thickness of mask 100 is approximately 140 μm. The first unit pattern Ca, the second unit pattern Cb, and the third unit pattern Cc are isotropically etched, resulting in curved sides. The dark layer on the upper part of unit pattern CP corresponds to the first insulating portion Ma, the second insulating portion Mb, and the third insulating portion Mc. The angle a3 of any straight line L1 from the upper corner Ca1 of the first pattern Ca to the upper corner Cb1 of the second unit pattern Cb is approximately 47.8°, with a greater inclination in the lower part. Therefore, it can be seen that organic matter entering from the corner of the first unit pattern Ca can be more uniformly concentrated into the third unit pattern Cc. Organic matter passing through the third unit pattern Cc [or, the mask unit region CR] can pass through the mask pattern P of mask 100 and form OLED pixels on the target substrate where OLED pixels are to be formed.

[0216] As described above, the present invention has illustrated and explained preferred embodiments, but the present invention is not limited to the above embodiments. Various modifications and alterations can be made by those skilled in the art without departing from the spirit of the present invention. All such modifications and alterations should be considered to fall within the scope of the present invention and the appended claims.

Claims

1. A method for manufacturing a frame, the frame being used in a connector between a mask for forming OLED pixels and the frame, the method comprising the following steps: (a) Adhere the first side of the metal sheet to the movable plate; (b) Reduce the thickness of the metal sheet; (c) A unit sheet portion is manufactured by forming a plurality of mask unit regions on the second surface opposite to the first surface of the metal sheet; (d) Connect the unit sheet portion to the edge frame portion, the edge frame portion including a hollow region.

2. The frame manufacturing method as described in claim 1, wherein, In step (a), the movable plate and the metal sheet are bonded together by clamping a dry film anti-corrosion layer.

3. The frame manufacturing method as described in claim 1, wherein, The movable plate is made of borosilicate glass, and the width × length of the movable plate is at least greater than 1500mm × 900mm.

4. The frame manufacturing method as described in claim 1, wherein, The metal sheet is formed by a rolling process, wherein in step (a) the thickness of the metal sheet is at least greater than 100 μm, and in step (b) the thickness of the metal sheet is reduced to 30 μm to 100 μm.

5. The frame manufacturing method according to claim 1, wherein, Between step (b) and step (c), or between step (c) and step (d), the following steps are further included: In step (d), the connection area of ​​the metal sheet used to contact the edge frame portion is thinned to less than the thickness of the metal sheet.

6. The frame manufacturing method as described in claim 5, wherein, In step (d), the unit sheet portion and the edge frame portion are connected by irradiating the connection area with a laser.

7. The frame manufacturing method as described in claim 1, wherein, The thickness reduction of the metal sheet is achieved by any one of the following methods: chemical mechanical polishing, chemical wet etching, dry etching, grinding, or polishing.

8. The frame manufacturing method as described in claim 1, wherein, After the thickness of the metal sheet is reduced, the surface roughness (Ra) of the second side of the metal sheet is less than 0.1 μm and greater than 0.

9. The frame manufacturing method as described in claim 1, wherein, Step (b) includes the following steps: (b1) Removing surface defects and thinning the thickness on the second surface, opposite to the first surface of the metal sheet; and (b2) The thickness is reduced on the second surface by etching.

10. The frame manufacturing method as described in claim 9, wherein, The thickness reduction in step (b1) is achieved by using any one of grinding, polishing, or grinding to reduce the thickness of the metal sheet by 2.5% to 12.5% ​​based on the initial thickness. After step (b1), particles contained in defects on the second surface will be removed.

11. The frame manufacturing method as described in claim 9, wherein, The thickness reduction in step (b2) is achieved by wet etching, with a reduction amount greater than that in step (b1).

12. The frame manufacturing method as described in claim 1, wherein, In step (c), the unit sheet portion includes: Edge sheet section; A plurality of first grid sheet portions, which are formed extending along a first direction and whose two ends are connected to the edge sheet portions; and A plurality of second grid sheet portions are formed extending along a second direction perpendicular to the first direction and intersecting with the first grid sheet portions, and both ends are connected to the edge sheet portions. In step (d), at least a portion of the edge sheet portion is connected to the edge frame portion.

13. The frame manufacturing method as described in claim 1, wherein, Step (c) includes the following steps: (c1) A patterned first insulating portion is formed on the second surface of the metal sheet; (c2) A first unit pattern with a first depth is formed on the second surface of the metal sheet by wet etching; (c3) The second insulating portion is filled at least within the first unit pattern; (c4) Only the second insulating part located vertically below the first insulating part is retained; (c5) A second unit pattern of a second depth is formed from the first unit pattern on the second surface of the metal sheet by wet etching; (c6) The third insulating portion is filled at least within the second unit pattern; (c7) Only the third insulating part located vertically below the second insulating part is retained; (c8) A third unit pattern of a third depth is formed from the second unit pattern using wet etching on the second surface of the metal sheet.

14. The frame manufacturing method as described in claim 13, wherein, After step (c8), the mask unit region is formed by opening the first surface of the metal sheet, the metal sheet being provided as a unit sheet portion having a plurality of the mask unit regions formed along a first direction and a second direction perpendicular to the first direction.

15. The frame manufacturing method as described in claim 13, wherein, The difference in width between the first unit pattern and the second unit pattern is greater than the difference in width between the second unit pattern and the third unit pattern.

16. A method for manufacturing a frame, the frame being used in a connector between a mask for forming OLED pixels and the frame, the method comprising the steps of: (a) Adhere the first side of the metal sheet to the first movable plate; (b) The thickness is reduced on the second surface, which is opposite to the first surface of the metal sheet; (c) Adhere the second side of the metal sheet to the second movable plate; (d) Separate the first movable plate from the metal sheet; (e) The thickness is reduced on the first surface of the metal sheet; (f) A plurality of mask unit regions are formed on the first surface of the metal sheet, and unit sheet portions are manufactured; (g) Connect the unit sheet portion to the edge frame portion, the edge frame portion including a hollow region.

17. A frame used in a connector between an OLED pixel forming mask and a frame, the frame comprising: The edge frame section includes a hollow area; as well as The unit sheet portion is connected to the edge frame portion and forms multiple mask unit areas. The unit sheet portion includes: Edge sheet section; A plurality of first grid sheet portions, which are formed extending along a first direction and whose two ends are connected to the edge sheet portions; and A plurality of second grid sheet portions are formed extending along a second direction perpendicular to the first direction and intersecting with the first grid sheet portions, and both ends are connected to the edge sheet portions. The width × length of the unit sheet is greater than 1500mm × 900mm, and the thickness is less than 100μm.

18. The framework as described in claim 17, wherein, The thickness of the connecting portion of the edge sheet portion that contacts the edge frame portion is less than the thickness of the remaining portion of the edge sheet portion. Except for the connecting portion portion, the lower surface of the edge sheet portion, the lower surface of the first grid sheet portion, and the lower surface of the second grid sheet portion are arranged in the hollow area of ​​the edge frame portion.

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