A micro-hole crossing hole deburring method for precision components of semiconductor devices

Abstract

The application relates to a deburring method for a micro-aperture cross-hole of a semiconductor equipment precision component. The method comprises the following steps: deburring liquid: uniformly mixing cage polysilsesquioxane-octakis-epoxy nano silicon dioxide dispersion, phenylboronic acid, octakis octyl cage polysilsesquioxane, an activated dispersant and a first solvent to obtain a first mixed liquid; dissolving an organic acid in a second solvent to obtain a second mixed liquid, adding the second mixed liquid into the first mixed liquid, adjusting the PH value to 3-5 to obtain an environment-friendly deburring liquid; capillary removal: removing the burrs inside the hole of the semiconductor equipment precision component by using the heated deburring liquid, and then performing flushing to obtain the precision component with the removed burrs and the recycled deburring liquid. The above scheme realizes the triple effects of "grinding-dissolving-protection", improves the burr removal effect of the micro-aperture cross-hole of the semiconductor equipment precision component, and can maintain good removal effect for long-term repeated use and heating.

Description

Technical Field

[0001] This application relates to the field of surface treatment for precision components of semiconductor equipment, and in particular to a method for deburring intersecting inner holes with small apertures for precision components of semiconductor equipment. Background Technology

[0002] Interlocking vias, a common structural form in precision components of mechanical semiconductor equipment, are widely used in the high-precision and complex mechanical structures of semiconductor equipment such as lithography machines, etching machines, ion implanters, chemical vapor deposition (CVD) equipment, and physical vapor deposition (PVD) equipment. They enable functions such as fluid transport, lubrication, cooling, and assembly connections. They play a crucial role in industrial production, ensuring the normal operation and performance of various mechanical equipment. For example, in hydraulic systems, interlocking vias bear the heavy responsibility of fluid transport, ensuring stable system pressure and power transmission; in the aerospace field, their structural reliability is critical to flight safety. Moreover, as modern industry continuously increases the performance and precision requirements of precision components in mechanical semiconductor equipment, the importance of interlocking vias becomes increasingly prominent, driving the continuous advancement of related manufacturing technologies.

[0003] To address the deburring issue of cross-holes, several methods are commonly employed. One is destructive sampling, where the precision component of the semiconductor device is cut open after deburring, and a microscope is used to inspect whether the burrs have been completely removed. Another method involves using strong acids, strong alkalis, or abrasives to remove burrs. In some cases, manual polishing is also used to treat visible and easily accessible burrs. These methods can meet some deburring needs to a certain extent, but each has different application scenarios and limitations.

[0004] However, existing deburring methods have significant drawbacks. Destructive sampling methods render precision semiconductor components unusable for subsequent assembly or actual use, greatly increasing production costs for companies. Using strong acid or alkali etchants or abrasives for deburring can easily damage the surface of these precision components, leading to corrosion and roughness. This is particularly true for etchants or abrasives containing chloride or nitrate ions, where these problems are more pronounced. Furthermore, the deburring effect deteriorates with repeated use of the etchant or abrasive. Therefore, further research is needed. Summary of the Invention

[0005] The purpose of this application is to overcome the above-mentioned technical problems and provide a method for deburring intersecting inner holes with small apertures for precision components of semiconductor devices.

[0006] A method for deburring intersecting micro-aperture holes in precision components of semiconductor devices includes the following steps:

[0007] Burr removal solution: By weight percentage, weigh cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant and first solvent, mix evenly to obtain a first mixture; weigh organic acid and dissolve it in a second solvent to obtain a second mixture; add the second mixture to the first mixture, adjust the pH to 3-5, and obtain an environmentally friendly burr removal solution; the activating dispersant is polyethylene glycol oleate and / or emulsified calcium stearate dispersion;

[0008] Capillary removal: The heated deburring solution is used to remove burrs inside the pores of precision components of semiconductor equipment, followed by rinsing to obtain the deburred precision components of semiconductor equipment and the recovered deburring solution.

[0009] By adopting the above technical solution, an environmentally friendly burr removal solution is prepared by compounding cage-type polysilsesquioxane-octaepoxy nano-silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant, first solvent, and organic acid. This solution achieves a triple grinding-dissolving-protection effect, improving the burr removal effect on micro-diameter intersecting internal pores. Adjusting the pH to 3-5 ensures optimal burr removal, avoids over-corrosion, and improves product qualification rate. Using the heated burr removal solution to remove burrs inside the pores of precision semiconductor equipment components can improve the burr removal effect, avoid over-corrosion, and improve product qualification rate. Finally, rinsing yields the burr-removed precision semiconductor equipment components and the recovered burr removal solution, facilitating its recycling.

[0010] Specifically, the nano-silica particles in the cage-type polysilsesquioxane-octa-epoxy nano-silica dispersion remove burrs and micro-protrusions from the metal surface through physical friction. The octa-epoxy functional groups form a nanoscale protective film to reduce secondary scratches, and the siloxane skeleton enhances the stability of the dispersion to ensure uniform grinding. The lubricating effect of octa-octyl cage-type polysilsesquioxane reduces friction and wear. In chemical etching, its surface adsorption properties enhance etching selectivity. Pinacol diborate forms a physical adsorption film on the metal surface to reduce the coefficient of friction, providing short-term rust prevention, and exhibits good stability under weakly acidic conditions. Oleic acid polyethylene glycol phosphate forms an oil-in-water emulsion system to uniformly disperse the oily lubricant, and its phosphate groups inhibit electrochemical corrosion. Therefore, the use of cage-type polysilsesquioxane-octa-epoxy nano-silica dispersion, pinacol diborate, octa-octyl cage-type polysilsesquioxane, and activating dispersant can achieve a better burr removal effect, and the burr removal solution still has excellent performance after repeated recycling.

[0011] Preferably, the specific process of capillary removal is as follows: the precision component of the semiconductor device is completely immersed in heated deburring solution, vibrated to allow the deburring solution to penetrate into the intersecting inner holes of the precision component of the semiconductor device with tiny apertures, and the burrs inside the pores are removed. Then, the component is rinsed to obtain the precision component of the semiconductor device with the burrs removed and the recovered deburring solution.

[0012] By adopting the above technical solution, a cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, an activating dispersant, and a first solvent are first mixed. Then, the mixture is mixed with a second solvent containing dissolved organic acid, and the pH is adjusted to 3-5 to obtain an environmentally friendly burr removal solution. The components work synergistically to achieve a triple effect of grinding, dissolving, and protecting, thereby improving the burr removal effect of micro-diameter intersecting inner holes. The solution maintains good performance even with long-term repeated use and heating. Then, the precision parts of the semiconductor equipment are completely immersed in the heated burr removal solution and vibrated. This allows the burr removal solution to penetrate into the micro-diameter intersecting inner holes of the precision parts of the semiconductor equipment and remove burrs from the pores. Vibration allows the burr removal solution to penetrate into the interior of the micro-diameter intersecting inner holes, which is beneficial for effective burr removal. Finally, the precision parts of the semiconductor equipment with burrs removed and the recovered burr removal solution are obtained by rinsing.

[0013] Preferably, the vibration frequency is 20-100 kHz and the vibration time is 2-30 min.

[0014] By adopting the above technical solution, an environmentally friendly deburring solution, prepared by heating to 45-55℃, mixing various components in a specific weight ratio, and having a pH of 3-5, is used to completely immerse precision components of semiconductor equipment. Vibration is then applied at a vibration frequency of 20-100kHz for 2-30 minutes. This allows the deburring solution to better penetrate the intersecting micro-diameter holes of the precision components, thereby more effectively removing burrs from these holes. Simultaneously, it avoids excessive corrosion on the exterior of the precision components, which helps ensure the quality of the precision components and improve the yield rate. Furthermore, the deburring solution can be recycled and reused.

[0015] Preferably, the specific process of capillary removal is as follows: injecting heated deburring solution into the pores of precision components of semiconductor equipment, removing the burrs inside the pores, and then rinsing to obtain the deburred precision components of semiconductor equipment and the recovered deburring solution.

[0016] By adopting the above technical solution, a first mixture is obtained by uniformly mixing cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant, and a first solvent. An organic acid is dissolved in a second solvent to obtain a second mixture. The second mixture is added to the first mixture and the pH is adjusted to 3-5 to obtain an environmentally friendly burr removal solution. This solution allows each component to exert a synergistic effect, achieving a triple grinding-dissolving-protection effect, improving the burr removal effect of micro-diameter intersecting internal holes. It can maintain good results even with long-term repeated use and heating, ensuring practicality. Injecting the heated burr removal solution into the pores of precision components in semiconductor equipment to remove burrs can avoid contact between the burr and the outer wall, ensuring good removal effect while maintaining good quality and improving the pass rate.

[0017] Preferably, the flow rate of the deburring liquid injected into the pores of the precision components of the semiconductor device is 1-5 L / min, and the injection pressure is 2-30 MPa.

[0018] By employing the above technical solution, the deburring solution is injected into the pores of precision components in semiconductor equipment at a flow rate of 1-5 L / min and a pressure of 2-30 MPa. Combined with heating, the solution accelerates the corrosion or softening of the deburring material. The high-pressure fluid carries abrasive particles to impact the root of the deburr, utilizing the shear force of the flow rate to detach the deburr. This achieves good deburring results for small-diameter intersecting internal holes. Simultaneously, the combination of multiple components works synergistically, providing grinding, dissolving, and protective effects. Heating to 45-55℃ ensures effective deburring while avoiding over-corrosion, thus guaranteeing the quality of precision semiconductor components and improving the yield rate. Furthermore, the liquid collected through the closed-loop system can be reused after filtration, reducing production costs.

[0019] Preferably, the temperature of the heated burr removal liquid is 45-55°C.

[0020] By adopting the above technical solution, a cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, an activating dispersant, and a first solvent are mixed. An organic acid is dissolved in a second solvent. The second mixture is added to the first mixture, and the pH is adjusted to 3-5 to obtain an environmentally friendly burr removal solution. This heated burr removal solution is used to remove burrs inside the pores of precision components in semiconductor equipment, followed by rinsing and recycling. The temperature of the heated burr removal solution is 45-55℃, which allows multiple components to exert a synergistic effect, achieving a triple effect of grinding, dissolving, and protecting. This improves the removal effect of burrs in small-diameter intersecting internal holes, avoids over-corrosion, and ensures the pass rate of precision components in semiconductor equipment. At the same time, the appropriate temperature can accelerate the corrosion or softening of the burr material, which is beneficial for burr removal.

[0021] Preferably, the weight ratio of cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant and second solvent is (2-5):(0.1-0.3):(1-2):(1-5):100.

[0022] By adopting the above technical solution and clarifying the weight ratio of each component, the cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant, and second solvent can exert a synergistic effect, more effectively achieving the triple action of "grinding-dissolving-protection", improving the removal effect of burrs in small diameter intersecting internal holes, and maintaining the removal effect after long-term repeated use and heating, thus ensuring practicality.

[0023] Preferably, the activating dispersant is composed of polyethylene glycol oleate and emulsified calcium stearate dispersion in a weight ratio of 1:(1-3).

[0024] By adopting the above technical solution, a cage-like polysilsesquioxane-octa-epoxy nano-silica dispersion, pinacol diborate, octa-octyl cage-like polysilsesquioxane, an activating dispersant, and a first solvent are mixed. An organic acid is dissolved in a second solvent, and the first mixture is added to adjust the pH to 3-5 to obtain an environmentally friendly burr removal solution. The heated burr removal solution is then used to remove and rinse burrs from the pores of precision components in semiconductor equipment. The activating dispersant is composed of polyethylene glycol oleate and emulsified calcium stearate dispersion in a weight ratio of 1:(1-3), which allows the components in the burr removal solution to work synergistically. It functions to achieve a triple grinding-dissolving-protection effect, improving the removal effect of burrs in small diameter intersecting internal holes. Long-term repeated use and heating can maintain a good removal effect. At the same time, oleic acid polyethylene glycol phosphate forms an oil-in-water emulsion system to uniformly disperse the oily lubricant. The phosphate groups form a chemical adsorption film with the metal surface to inhibit electrochemical corrosion. The calcium stearate microparticles in the emulsified calcium stearate dispersion melt and spread during the grinding process to form a low shear strength lubricating film to reduce the direct contact between the abrasive and the metal surface. The emulsifier ensures that it is stably dispersed in the aqueous phase to avoid clogging the grinding gap.

[0025] Preferably, the organic acid is one or more of citric acid, alginic acid, oxalic acid, and tartaric acid.

[0026] By adopting the above technical solution, a first mixture is obtained by mixing cage-type polysilsesquioxane-octa-epoxy nano-silica dispersion, pinacol diborate, octa-octyl cage-type polysilsesquioxane, activating dispersant, and a first solvent. A second mixture is obtained by dissolving one or more organic acids selected from citric acid, alginic acid, oxalic acid, and tartaric acid in a second solvent. The two mixtures are then mixed and the pH is adjusted to 3-5 to prepare an environmentally friendly burr removal solution. This solution achieves a triple grinding-dissolving-protection effect to improve the removal effect of burrs in small-diameter intersecting internal holes. Long-term repeated use and heating can maintain a good removal effect. The organic acids dissolve the oxide film on the metal surface through complexation, reducing the bonding force between burrs and the substrate. Adjusting the pH of the system to weakly acidic conditions optimizes the activity of the grinding media and inhibits excessive metal corrosion. The formulation has improved biodegradability, reducing wastewater treatment costs. The heated burr removal solution is used for burr removal and rinsing of the internal pores of precision components in semiconductor equipment, resulting in burr-removed precision components and recovered burr removal solution.

[0027] Preferably, the first solvent is an ethanol-THF aqueous solution, and the second solvent is water.

[0028] By adopting the above technical solution, using ethanol-THF aqueous solution as the first solvent and water as the second solvent to prepare an environmentally friendly burr removal solution, it can work in conjunction with other components to achieve a triple grinding-dissolving-protection effect, improve the removal effect of burrs in small diameter intersecting internal holes, maintain a good removal effect even after long-term repeated use and heating, and avoid over-corrosion and other situations, thereby improving the product qualification rate.

[0029] In summary, this application includes at least one of the following beneficial technical effects:

[0030] 1. A cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant and organic acid are compounded to achieve a triple effect of "grinding-dissolving-protection", which improves the burr removal effect of micro-diameter intersecting internal holes. Moreover, it can maintain a good removal effect with long-term repeated use and heating, avoiding the problem that the effect of traditional strong acid, strong alkali or abrasive burr removal deteriorates with the number of uses.

[0031] 2. Adjusting the pH of the deburring solution to 3-5 ensures optimal deburring results, avoids over-corrosion, improves product qualification rate, and solves the problem that traditional methods using strong acids and alkalis can easily damage the surface of precision semiconductor equipment components; 3. By using heated deburring solution to remove burrs inside the pores of precision semiconductor equipment components, combined with specific capillary removal processes (immersion vibration or injection), burrs can be effectively removed, while avoiding the increased production costs caused by traditional destructive sampling inspections. Detailed Implementation

[0032] The present application will be further described in detail below with reference to the embodiments.

[0033] Partial ingredient descriptions:

[0034] Cage-shaped polysilsesquioxane-octaepoxy nano-silica dispersion, manufactured by Angxing New Carbon Materials Changzhou Co., Ltd. Product Name: Cage-shaped polysilsesquioxane-octaepoxy nano-silica dispersion EP4F09.01. EP0409 is a hybrid 1.5nm molecule with an inorganic silsesquioxane core and organic glycidyl groups attached to the four corners of the cage, serving as a multifunctional crosslinking agent. 30% by weight of 20nm nano-silica is completely dispersed in EP0409.

[0035] Pinacol diboronic acid ester, CAS No.: 73183-34-3;

[0036] The brand of oleic acid polyethylene glycol phosphate is Haishihua PEG400MO phosphate ester;

[0037] Octyl cage-like polysilsesquioxane, POSS107;

[0038] Emulsified calcium stearate dispersion, Shandong Shoucheng Chemical Co., Ltd., model YF-478.

[0039] Example

[0040] Example 1

[0041] A method for deburring intersecting micro-aperture holes in precision components of semiconductor devices includes the following steps:

[0042] Burr removal solution: Weigh out cage-type polysilsesquioxane-octaepoxy nano-silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant, and the first solvent in a weight ratio of 5:0.1:2:5:100, and mix them evenly to obtain a first mixture. Weigh out 10 parts by weight of organic acid and dissolve it in 10 parts by weight of the second solvent to obtain a second mixture. Add the second mixture to the first mixture and adjust the pH to 4 to obtain an environmentally friendly burr removal solution. The activating dispersant is polyethylene glycol oleate; the organic acid is composed of citric acid, oxalic acid, and tartaric acid in a weight ratio of 10:2:3. The solvent is composed of water and anhydrous ethanol in a weight ratio of 4:1; the first solvent is an ethanol-THF aqueous solution obtained by mixing anhydrous ethanol, THF, and water in a weight ratio of 1:1:3, and the second solution is water.

[0043] Capillary removal: The precision components of the semiconductor equipment are completely immersed in ultrasonic waves with heated deburring solution at a frequency of 50 kHz for 5 minutes. This allows the deburring solution to penetrate the intersecting micro-apertures of the precision components and remove the burrs inside the pores. The components are then rinsed using an ultrasonic cleaner containing deionized water at a frequency of 50 kHz for 5 minutes. This process yields the deburred precision components of the semiconductor equipment and the recovered deburring solution.

[0044] The recovered deburring solution is obtained by collecting the deburring solution after processing the precision parts of semiconductor equipment, and then filtering it through a filter screen (5μm precision).

[0045] The temperature of the heated burr removal solution is 45-55℃, preferably 50℃ in this embodiment.

[0046] Example 2

[0047] The difference between Example 2 and Example 1 lies in the burr removal process, as detailed below:

[0048] The heated deburring solution is injected into the pores of a precision semiconductor device to remove burrs from the pores. The pores are then rinsed to obtain the deburred precision semiconductor device and the recovered deburring solution.

[0049] Specifically, the injection process employs high-pressure injection, which involves injecting heated removal liquid into the pores of precision components in semiconductor devices at a flow rate of 1 L / min using a high-pressure pump, while maintaining a pressure of 15 MPa within the channel for 1 minute.

[0050] Cleaning and recycling stage: Switch to deionized water and rinse the pores at a flow rate of 2L / min and a low pressure of 5MPa to remove residual cleaning solution and detached burrs for 2 minutes.

[0051] Waste liquid recovery: The removal liquid and rinsing liquid are collected separately through a closed-loop system. After filtration through a filter screen (5μm precision), the corresponding recovered burr removal liquid is obtained for reuse. The rinsing liquid is collected in the wastewater treatment tank.

[0052] Example 3

[0053] The difference between Example 3 and Example 2 is that the raw material composition of the deburring solution is different:

[0054] The composition consists of cage-type polysilsesquioxane-octa-epoxy nano silica dispersion, pinacol diborate, octa-octyl cage-type polysilsesquioxane, activating dispersant, and second solvent in a weight ratio of 7:0.2:2:4:100.

[0055] Example 4

[0056] The difference between Example 4 and Example 2 is that the raw material composition of the deburring solution is different:

[0057] The composition consists of cage-type polysilsesquioxane-octa-epoxy nano silica dispersion, pinacol diborate, octa-octyl cage-type polysilsesquioxane, activating dispersant, and second solvent in a weight ratio of 8:0.3:1:1:100.

[0058] Example 5

[0059] The difference between Example 5 and Example 2 is that the activating dispersant is an emulsified calcium stearate dispersion.

[0060] Example 6

[0061] The difference between Example 6 and Example 2 is that the activating dispersant is composed of polyethylene glycol oleate and emulsified calcium stearate dispersion in a weight ratio of 1:(1-3). In this example, the ratio is specifically 1:1.

[0062] Comparative Example

[0063] Comparative Example 1

[0064] The difference between Comparative Example 1 and Example 1 is that the cage-type polysilsesquioxane-octaepoxy nano silica dispersion was replaced with an equal amount of silicon carbide (500 nm).

[0065] Comparative Example 2

[0066] The difference between Comparative Example 2 and Example 1 is that pinacol diboronic acid ester was replaced with an equal amount of the first solvent.

[0067] Comparative Example 3

[0068] The difference between Comparative Example 3 and Example 1 is that octaoctyl cage-like polysilsesquioxane was replaced with an equal amount of water.

[0069] Comparative Example 4

[0070] The difference between Comparative Example 4 and Example 1 is that the organic acid was replaced in equal amounts with sulfuric acid with a volume concentration of 68%.

[0071] Performance testing

[0072] Detection methods / test methods

[0073] Features of precision components for semiconductor equipment: cross-hole diameter 0.8mm, depth 15mm, material is Inconel 718 alloy, number of cross-holes 5, inner and outer surfaces are clean and free of contaminants, and the roughness of both inner and outer surfaces Ra≤0.8μm.

[0074] Detection method: First, use a 0.5mm diameter endoscope for rough inspection and mark the suspected spur areas; perform micro-CT scans on the suspicious areas and confirm the spur height through three-dimensional reconstruction.

[0075] Experiment 1: Batch burr removal experiment; Batch burr removal was performed using the methods described in Examples 1-6 and Comparative Examples 1-3; the batch size was 200; the specific batch process is as follows:

[0076] Example 1 and Comparative Examples 1-4: 200 precision components of semiconductor equipment were completely immersed in an ultrasonic glass cleaning machine containing 40L of burr removal solution at 50℃. The burr removal process was the same as in Example 1.

[0077] Examples 2-6: 200 precision semiconductor equipment components were divided into 5 batches of samples. For each batch of samples, a 50°C deburring solution was injected into the pores of the precision semiconductor equipment components using a high-pressure device. The deburring process was the same as in Example 2. The recovered deburring solution was then used for the second batch of samples, and so on, to complete the deburring of 200 precision semiconductor equipment components. If the recovered deburring solution was insufficient, a small amount of new heated deburring solution was added, as a small amount would be lost during repeated cycles.

[0078] Experiment 2: Stability of the recovered deburring solution; After five batch deburring treatments according to the method in Experiment 1, the recovered deburring solution was reused for batch deburring of 200 units, ultimately yielding precision semiconductor equipment components with deburred parts.

[0079] The precision semiconductor equipment components obtained from Experiments 1 and 2 with burrs removed were all tested for burr height using the above-mentioned detection method; those with burr height <1μm or no burrs were considered qualified, and the pass rate was calculated.

[0080] The pass rate is divided into five levels, from E, D, C, B, A, and S respectively: below 80%, 80-85%, 85-90%, 90-95%, 95-98%, and above 98%.

[0081] The high pass rate of the samples obtained in Experiment 2 indicates that the burr removal solution is more stable.

[0082] Experiment 3: Five deburred samples from Experiments 1 and 2 were randomly selected for inspection. They were cut open and examined by scanning electron microscopy (SEM). If the roughness of either the inner or outer surface was not within Ra≤0.8μm, it was considered unqualified.

[0083] The specific details of the above experiments are shown in Table 1;

[0084] Table 1. Experimental data of Examples 1-6 and Comparative Examples 1-3

[0085]

[0086]

[0087] Based on Example 1 and Comparative Examples 1-3, and in conjunction with Table 1, it can be seen that the pass rate of Experiment 1 in Comparative Examples 1-3 reached Grade B (90-95%), and the pass rate of Experiment 2 was Grade D (80-85%) or Grade E (below 80%), and the appearance showed unqualified phenomena after batch processing. However, the appearance of Experiments 1 and 2 in this application were qualified, and the pass rate also reached Grade A (95-98%) or Grade S (above 98%). This indicates that the compounding of the cage-type polysilsesquioxane-octacyclic nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, and activating dispersant (polyethylene glycol oleate and / or emulsified calcium stearate dispersion) in this application can play a synergistic role. At the same time, combined with organic acids and the preparation process of this application, better performance can be obtained.

[0088] As can be seen from Example 1 and Comparative Example 4, and in conjunction with Table 1, the use of strong acids such as sulfuric acid, combined with the process of this application, can lead to corrosion and other phenomena in precision components of semiconductor equipment after deburring, thereby reducing its practicality.

[0089] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

Claims

1. A deburring method for a micro aperture intersecting hole of a precision component of a semiconductor device, characterized by, Includes the following steps: Burr removal solution: By weight percentage, weigh cage-type polysilsesquioxane-octaepoxy nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant and first solvent, mix evenly to obtain a first mixture; weigh organic acid and dissolve it in a second solvent to obtain a second mixture; add the second mixture to the first mixture, adjust the pH to 3-5, and obtain an environmentally friendly burr removal solution; the activating dispersant is polyethylene glycol oleate and / or emulsified calcium stearate dispersion; Capillary removal: The heated deburring solution is used to remove burrs inside the pores of precision components of semiconductor equipment, followed by rinsing to obtain the deburred precision components of semiconductor equipment and the recovered deburring solution.

2. The method for deburring a micro-hole intersection inner hole of a precision component of a semiconductor device according to claim 1, characterized in that, The specific process of capillary removal is as follows: the precision component of the semiconductor equipment is completely immersed in heated deburring solution, and vibrated to allow the deburring solution to penetrate into the intersecting inner holes of the precision component with tiny apertures, and to remove the burrs inside the pores. Then, it is rinsed to obtain the precision component of the semiconductor equipment with the burrs removed and the recovered deburring solution.

3. The method for deburring a micro-hole intersection inner hole of a precision component of a semiconductor device according to claim 2, characterized in that: The vibration frequency is 20-100kHz, and the vibration time is 2-30min.

4. The method for deburring a micro-hole intersection inner hole of a precision component of a semiconductor device according to claim 1, characterized in that, The specific process of capillary removal is as follows: a heated deburring solution is injected into the pores of a precision component of a semiconductor device to remove the burrs inside the pores, followed by rinsing to obtain a precision component of the semiconductor device with the burrs removed and the recovered deburring solution.

5. The method for deburring a micro-hole intersection inner hole of a precision component of a semiconductor device according to claim 4, characterized in that: The flow rate of the deburring liquid injected into the pores of the precision components of the semiconductor device is 1-5 L / min, and the injection pressure is 2-30 MPa.

6. A method for deburring a micro-hole intersection inner hole of a precision component of a semiconductor device according to any one of claims 1 to 5, characterized in that: The temperature of the heated burr removal solution is 45-55℃.

7. A method for deburring intersecting micro-aperture holes in precision components of semiconductor devices according to any one of claims 1-5, characterized in that: The cage-type polysilsesquioxane-octacyclic nano silica dispersion, pinacol diborate, octaoctyl cage-type polysilsesquioxane, activating dispersant and second solvent are composed of a weight ratio of (5-8):(0.1-0.3):(1-2):(1-5):

100.

8. The method for deburring intersecting micro-diameter holes in precision components of semiconductor devices according to claim 1, characterized in that: The activating dispersant is composed of oleic acid polyethylene glycol phosphate and emulsified calcium stearate dispersion in a weight ratio of 1:(1-3).

9. A method for deburring intersecting micro-aperture holes in precision components of semiconductor devices according to claim 1, characterized in that: The organic acid is one or more of citric acid, alginic acid, oxalic acid, and tartaric acid.

10. A method for deburring intersecting micro-aperture holes in precision components of semiconductor devices according to claim 1, characterized in that: The first solvent is an ethanol-THF aqueous solution, and the second solution is water.

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