Partitioned temperature control quartz reaction cavity for silicon epitaxial growth

Abstract

The invention discloses a zoned temperature control quartz reaction chamber for silicon epitaxial growth, and relates to the technical field of quartz reaction chambers, the zoned temperature control quartz reaction chamber comprises a chamber, a gas supply seat is arranged at the top of the chamber, an exhaust port is arranged at the bottom of the chamber, the zoned temperature control quartz reaction chamber further comprises a carrier, the carrier comprises a base, the base is arranged in the chamber, and the exhaust port is arranged at the bottom of the chamber; a fence is arranged on the edge of the upper surface of the base; the plurality of first baffle rings are fixedly connected to the lower surface of the base and are distributed at intervals in the radial direction; the supporting shaft is connected to the lower portion of the base and used for supporting and driving the base to rotate; the floating adjusting assembly is arranged between the base and the supporting shaft and is high in stability and small in disturbance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quartz reaction chamber, in particular to a partition temperature control quartz reaction chamber for silicon epitaxial growth. BACKGROUND

[0002] In the existing silicon epitaxial growth technology, the traditional chamber structure has fundamental limitations, such as the absence of key physical isolation components, which causes the reaction gas to directly act on the moving mechanism joint part, resulting in a large amount of by-products accumulating on the surface of the chamber bottom and support components. Continuous deposition causes the moving mechanism to be stuck and the rotation accuracy to be degraded.

[0003] In addition, in the field of specific structural protection measures (such as injecting protective gas into the carrier support area), although the gas injection method is used to inhibit deposition, due to the lack of effective gas isolation and recovery mechanism, excessive protective gas diffuses disorderly to the main deposition area. Its forced dilution of the reaction atmosphere has a chain effect including unexpected attenuation of deposition rate, divergence of epitaxial layer thickness distribution across the wafer, and landslide of doping concentration uniformity.

[0004] Therefore, it is necessary to provide a partition temperature control quartz reaction chamber for silicon epitaxial growth to solve the above problems. SUMMARY

[0005] To solve the above problems, the present application provides the following technical scheme: a partition temperature control quartz reaction chamber for silicon epitaxial growth, comprising a chamber, a gas supply seat is arranged at the top of the chamber, and an exhaust port is arranged at the bottom of the chamber, further comprising: a carrier, the carrier comprising: a base, the base is placed inside the chamber, and a surrounding barrier is arranged at the edge of the upper surface of the base; a plurality of first blocking rings, fixedly connected to the lower surface of the base and distributed in the radial direction; a support shaft, connected to the lower part of the base, for supporting and driving the base to rotate; a floating adjustment assembly arranged between the base and the support shaft.

[0006] Further, as a preferred, the first gap is between the bottom end of the first blocking ring and the inner bottom surface of the chamber; the inner bottom surface of the chamber is fixedly connected with a plurality of third blocking rings distributed in the radial direction, the top end of the third blocking ring and the bottom surface of the base have a second gap, the size of the first gap is equal to the size of the second gap; the plurality of first blocking rings and the plurality of third blocking rings are staggered in the radial direction.

[0007] Further, as a preferred, the carrier further comprises a second blocking ring, the second blocking ring is fixed to the bottom of the base; The second blocking ring is radially located more outward than any of the first blocking rings, and has a length greater than any of the first blocking rings.

[0008] Further, preferably, a base is arranged below the chamber, and the base has an upper opening arranged in communication with the chamber; The support shaft passes through the base and is rotationally connected to the base; The base is fixedly connected with an extension rod; The extension rod is fixedly connected with a connecting ring, and the connecting ring is rotationally connected to the support shaft.

[0009] Further, preferably, the floating adjustment assembly can be adjusted to a locked state or a floating state of the base relative to the support shaft; When the base is in the floating state relative to the support shaft, the extension rod can drive the support shaft and the base to move downward, so that the second blocking ring abuts against the inner bottom surface of the chamber.

[0010] Further, preferably, the floating adjustment assembly comprises: A connecting seat fixedly connected to the support shaft, and a support column fixedly arranged on the connecting seat; A sliding ball seat slidingly sleeved on the support column; An elastic member arranged between the sliding ball seat and the support column; A support seat fixedly connected to the sliding ball seat, and the support seat is used for supporting the connecting base; At least two symmetrical clamping seats; A hinged arm hingedly connecting the clamping seat to the connecting seat; An extender arranged on the connecting seat and capable of driving the at least two clamping seats to perform a deflection movement about the hinged arm.

[0011] Further, preferably, the number of the first blocking rings is one more than the number of the third blocking rings, so that each third blocking ring is distributed with the first blocking rings on both sides in the radial direction; The third blocking ring is provided with a heating ring.

[0012] Further, preferably, the carrier further has a plurality of spray heads and an internal gas supply pipe; The plurality of spray heads are circumferentially spaced apart on the support shaft and correspond to the positions of the first blocking rings; The gas supply pipe is internally arranged in the support shaft and is in communication with the gas inlets of the spray heads; The spray heads are arranged to spray gas towards the connection between the first blocking ring and the base; A plurality of gas collecting holes are arranged at the position close to the support shaft on the bottom of the chamber, and the plurality of gas collecting holes correspond to the plurality of spray heads in position.

[0013] Further, as preferred, the outer side of the base is sleeved with a collection bin, which covers the gas collecting hole and communicates with the gas collecting hole. An interface connected with the detector is arranged on the collection bin.

[0014] Compared with the prior art, the application provides a partition temperature control quartz reaction cavity for silicon epitaxial growth, which has the following beneficial effects: In the application, the labyrinth structure formed by the staggered blocking rings (the first blocking ring and the third blocking ring) below the susceptor and at the bottom of the cavity effectively controls the reaction gas flow path, increases the flow resistance to the gap area, and greatly suppresses the attachment of by-products at key positions. At the same time, the heat insulation design between the blocking rings ensures that the temperature of each heating zone is independently controllable, avoiding temperature interference.

[0015] In the application, the local high-pressure turbulent flow area is formed by the showerhead, the first blocking ring and other structures to prevent the reaction gas from entering, and the by-products are effectively discharged through the gas collecting hole.

[0016] In the application, the double-mode switching of the susceptor is realized by the floating adjustment assembly, which not only ensures high-precision rotation control during the growth process, but also realizes self-adaptive cleaning during the maintenance stage. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of a partition temperature control quartz reaction cavity for silicon epitaxial growth. Figure 2 It is an enlarged structural schematic diagram of A in Figure 1 Figure 3 It is a structural schematic diagram of the floating adjustment assembly. Figure 4 It is a schematic diagram of the flow direction of the auxiliary gas. In the figure: 1, cavity; 2, carrier; 3, gas supply seat; 4, exhaust port; 5, base; 21, susceptor; 22, floating adjustment assembly; 23, enclosing barrier; 24, first blocking ring; 25, support shaft; 26, showerhead; 27, second blocking ring; 221, connecting seat; 222, support column; 223, sliding ball seat; 224, elastic member; 225, support seat; 226, hinged arm; 227, clamping seat; 228, telescopic device; 6, telescopic rod; 7, collection bin; 8, detector; 11, gas collecting hole; 12, third blocking ring; 13, heating ring. DETAILED DESCRIPTION

[0018] ​The terms "first", "second", and the like, as used in the description and the claims of the application and the above Abstract, are used for distinguishing between similar objects and are not necessarily used to describe a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for brevity, described in a certain sequence or order. Furthermore, the terms "comprise", "comprising", "include", "including", and the like, as used in the specification are used in their open-ended, non-limiting sense, and are intended to cover the process, method, system, product, or apparatus comprising any additional process, method, system, product, or apparatus not recited.

[0019] Embodiment: In the embodiments of the application, referring to Figures 1-4 , a partition temperature control quartz reaction chamber for silicon epitaxial growth is provided, comprising a chamber 1, a gas supply seat 3 is arranged on the top of the chamber 1, and an exhaust port 4 is arranged on the bottom of the chamber 1, the gas supply seat 3 is used to supply reaction gas into the chamber 1. The quartz reaction chamber further comprises: a carrier 2, the carrier 2 comprises: a susceptor 21, the susceptor 21 is placed inside the chamber 1, a surrounding barrier 23 is arranged on the upper surface edge of the susceptor 21, and a bearing space is formed between the susceptor 21 and the surrounding barrier 23 for bearing a workpiece; a plurality of first blocking rings 24, which are fixedly connected to the lower surface of the susceptor 21 and are distributed in the radial direction; a support shaft 25, which is connected to the lower part of the susceptor 21 and is used to support and drive the susceptor 21 to rotate; wherein the bottom end of the first blocking ring 24 and the inner bottom surface of the chamber 1 have a first gap; the inner bottom surface of the chamber 1 is fixedly connected with a plurality of third blocking rings 12 distributed in the radial direction, the top end of the third blocking ring 12 and the bottom surface of the susceptor 21 have a second gap, and the size of the first gap is equal to the size of the second gap; the plurality of first blocking rings 24 and the plurality of third blocking rings 12 are staggered in the radial direction.

[0020] That is, a plurality of first blocking rings 24 are fixedly connected to the lower part of the susceptor 21 and are distributed in the radial direction of the susceptor 21. At the same time, a plurality of third blocking rings 12 are fixedly connected to the inner bottom surface of the chamber 1 and are also distributed in the radial direction. These plurality of first blocking rings 24 and plurality of third blocking rings 12 are staggered in the radial direction, forming a labyrinth structure.

[0021] During the epitaxial growth process, the reaction gas enters the chamber 1 through the gas supply seat 3. In a conventional design, the reaction gas will flow to the gap between the base 21 and the bottom of the chamber 1, resulting in the generation of deposition reactants. In the embodiment, a physical barrier is formed by the staggered distribution of the first blocking ring 24 and the third blocking ring 12.

[0022] When the reaction gas attempts to move to the gap between the bottom surface of the base 21 and the bottom of the chamber 1, the first blocking ring 24 blocks its straight path, forcing the gas flow to change direction; then, the third blocking ring 12 again interferes with its flow, forming a layer-by-layer barrier, greatly increasing the flow resistance of the reaction gas flowing to the gap area.

[0023] It should be noted that the size of the first gap is equal to the size of the second gap, which can ensure that the flow rate of the reaction gas is uniformly attenuated when passing through each first blocking ring 24 and third blocking ring 12.

[0024] In addition, the number of first blocking rings 24 is one more than the number of third blocking rings 12, so that each third blocking ring 12 has first blocking rings 24 distributed on both sides in the radial direction; The third blocking ring 12 is provided with a heating ring 13.

[0025] That is, each third blocking ring 12 is surrounded by a first blocking ring 24 on both sides, and the first blocking ring 24 acts as a heat shield to prevent the heat radiation of adjacent heating rings 13 from interfering with each other, ensuring that the temperature of each heating zone is independently controllable.

[0026] In the embodiment, the carrier 2 also has a plurality of nozzles 26 and an internal gas supply pipe; The plurality of nozzles 26 are circumferentially spaced apart on the support shaft 25 and correspond to the positions of the first blocking rings 24; The gas supply pipe is built-in in the support shaft 25 and communicates with the gas inlet of the nozzle 26; The gas injection direction of the nozzle 26 is towards the connection between the first blocking ring 24 and the base 21; A plurality of gas collection holes 11 are provided on the bottom of the chamber 1 near the position of the support shaft 25, and the plurality of gas collection holes 11 correspond to the plurality of nozzles 26 in position.

[0027] It should be noted that the gas injection direction of the nozzle 26 is towards the connection between the first blocking ring 24 and the base 21. The auxiliary gas sprayed by the nozzle 26 will rebound after hitting the bottom surface of the base 21 and the first blocking ring 24, and will be coupled with the suction force of the gas collection hole 11, forming a local high-pressure turbulent flow area in this area. Prevents the reaction gas from entering the space formed between the base 5 and the support shaft 25, and the byproduct particles in the turbulent flow will be sucked into the gas collection hole 11 along with the gas flow, avoiding secondary pollution.

[0028] It is worth mentioning that the jetting scheme adopted by the prior art has no recycling mechanism, resulting in a large amount of auxiliary gas directly rushing into the main reaction zone of the chamber 1. The dilution of the reaction gas concentration destroys the stoichiometric ratio required for silicon epitaxial growth, reduces the deposition rate and film uniformity.

[0029] In the embodiment, most of the auxiliary gas sprayed by the nozzle 26 is confined in the labyrinth below the susceptor 21, and most of the gas cannot diffuse upward to the main reaction zone (the silicon wafer growth area above the susceptor 21) due to the physical blocking of the blocking rings (the first blocking ring 24 and the third blocking ring 12) and the directional suction of the gas collection hole 11.

[0030] Further, the outer side of the base 5 is sleeved with a collection bin 7, which covers and communicates with the gas collection hole 11; The collection bin 7 is provided with an interface connected with the detector 8.

[0031] Among them, the gas sucked by the gas collection hole 11 is enriched in the collection bin 7, and the detector 8 can analyze in real time: Particulate matter concentration: monitor Si dust content (early warning of deposition risk); Gas composition: detect the proportion of residual reaction gas to judge the reaction efficiency.

[0032] Such detection has certain advantages, for example, when the Si particle concentration is detected to increase, the gas flow of the nozzle 26 is increased to strengthen the air curtain barrier.

[0033] In the embodiment, the carrier 2 further comprises a second blocking ring 27, which is fixed to the bottom of the susceptor 21; The radial position of the second blocking ring 27 is further outside than any first blocking ring 24, and the length of the second blocking ring 27 is greater than that of any first blocking ring 24.

[0034] A base 5 is arranged below the chamber 1, and the base 5 has an upper opening to communicate with the chamber 1; The support shaft 25 penetrates the base 5 and is rotationally connected with the base 5; The base 5 is fixedly connected with an extension rod 6; The extension end of the extension rod 6 is fixedly connected with a connecting ring, which is rotationally connected with the support shaft 25.

[0035] In this embodiment, the second blocking ring 27 is lengthened to further hinder the mixing of the two gases, which also leads to the second blocking ring 27 being more likely to interfere with the inner bottom surface of the chamber 1 (the inner bottom surface of the chamber 1 is deposited due to the reaction of the reaction gas), in which case, the telescopic rod 6 is retracted, so that the connecting ring drives the support shaft 25 to move downward, and the base 21 and the second blocking ring 27 are lowered synchronously. The bottom end of the second blocking ring 27 is in contact with the inner bottom of the chamber 1, and the deposited material is scraped off by rotating friction.

[0036] Further, a floating adjustment assembly 22 is arranged between the support shaft 25 and the base 21; The floating adjustment assembly 22 can be adjusted to a locked state or a floating state of the base 21 relative to the support shaft 25; When the base 21 is in the floating state relative to the support shaft 25, the telescopic rod 6 can drive the support shaft 25 and the base 21 to move downward, so that the second blocking ring 27 abuts against the inner bottom surface of the chamber 1, and the second blocking ring 27 and the inner bottom surface of the chamber 1 can move in friction at this time.

[0037] That is, the floating adjustment assembly 22 controls the connection state of the base 21 and the support shaft 25 through double-mode switching: Locked state: the base 21 is rigidly connected with the support shaft 25, which is suitable for the normal epitaxial growth stage and ensures the stability of the rotation of the base 21.

[0038] Floating state: the base 21 can move slightly relative to the support shaft 25, which is used for the cleaning and maintenance stage and allows the base 21 to adapt to the topography of the inner bottom of the chamber 1.

[0039] Specifically, the floating adjustment assembly 22 comprises: A connecting seat 221 fixedly connected to the support shaft 25; A support column 222 fixedly connected to the connecting seat 221; A sliding ball seat 223 slidingly sleeved on the support column 222; An elastic member 224 arranged between the sliding ball seat 223 and the support column 222; A support seat 225 fixedly connected to the sliding ball seat 223, the support seat 225 being used for supporting the base 21; At least two symmetrical clamping seats 227; A hinged arm 226 hingedly connecting the clamping seat 227 to the connecting seat 221; A telescopic device 228 arranged on the connecting seat 221 and capable of driving the at least two clamping seats 227 to perform deflection movement about the hinged arm 226, the ends of the clamping seats 227 being capable of contacting or separating from the outer circumferential surface of the sliding ball seat 223 after deflection to realize locking or unlocking.

[0040] The surface of the sliding ball seat 223 can be provided with an array of micro convex points to increase the friction coefficient with the holding seat 227 and prevent relative sliding. The inner surface of the holding seat 227 can be embedded with a wear-resistant ceramic lining to reduce the wear of high-frequency locking / unlocking.

[0041] The telescopic device 228 preferably selects a piezoelectric ceramic actuator.

[0042] The telescopic device 228 can drive the holding seat 227 to perform a deflection movement around the articulated arm 226, and the end of the holding seat 227 can be in contact or separated from the outer circumferential surface of the sliding ball seat 223 after deflection to achieve locking or unlocking.

[0043] The above is only a preferred specific embodiment of the present application, but the protection scope of the present application is not limited thereto, any person skilled in the art can make equivalent replacement or change within the technical range disclosed by the present application according to the technical solution and the inventive concept of the present application, which should be covered within the protection scope of the present application.

Claims

1. A temperature zoning quartz reaction chamber for epitaxial growth of silicon, comprising a chamber (1), a gas supply seat (3) is arranged on the top of the chamber (1), and an exhaust port (4) is arranged on the bottom of the chamber (1), characterized in that, Also comprising: a carrier (2) comprising: a base (21) placed inside a chamber (1), an upper surface edge of the base (21) being provided with a fence (23); a plurality of first blocking rings (24) fixedly connected to a lower surface of the base (21) and distributed in a radial direction; a support shaft (25) connected to a lower portion of the base (21) for supporting and driving the base (21) to rotate; a floating adjustment assembly (22) arranged between the base (21) and the support shaft (25); a first gap being formed between a bottom end of the first blocking ring (24) and an inner bottom surface of the chamber (1); an inner bottom surface of the chamber (1) being fixedly connected with a plurality of third blocking rings (12) distributed in a radial direction, a top end of the third blocking ring (12) and a bottom surface of the base (21) having a second gap, a size of the first gap being equal to a size of the second gap; the plurality of first blocking rings (24) and the plurality of third blocking rings (12) being staggered in a radial direction; the carrier (2) further comprising a second blocking ring (27) fixed to a bottom portion of the base (21); the second blocking ring (27) being located radially outward of any first blocking ring (24) and having a length greater than any first blocking ring (24).

2. The temperature zoned quartz reaction chamber for epitaxial growth of silicon as claimed in claim 1 wherein: a base (5) arranged below the chamber (1), the base (5) having an upper opening for being arranged in communication with the chamber (1); the support shaft (25) penetrating through the base (5) and being rotatably connected with the base (5); a telescopic rod (6) fixedly connected to the base (5); a connecting ring fixedly connected to a telescopic end of the telescopic rod (6), the connecting ring being rotatably connected with the support shaft (25).

3. The temperature zoned quartz reaction chamber for epitaxial growth of silicon as claimed in claim 2 wherein: the floating adjustment assembly (22) being capable of being adjusted to a locked state or a floating state of the base (21) relative to the support shaft (25); when the base (21) is in the floating state relative to the support shaft (25), the telescopic rod (6) is capable of driving the support shaft (25) and the base (21) to move downward, so that the second blocking ring (27) abuts against the inner bottom surface of the chamber (1).

4. The temperature zoned quartz reaction chamber for epitaxial growth of silicon as claimed in claim 1 or 3 wherein: the floating adjustment assembly (22) comprising: a connecting seat (221) fixedly connected to the support shaft (25), the connecting seat (221) being fixed with a support column (222); a sliding ball seat (223) slidingly sleeved on the support column (222); a resilient member (224) arranged between the sliding ball seat (223) and the support column (222); a support seat (225) fixedly connected to the sliding ball seat (223), the support seat (225) being used for supporting the connecting base (21); at least two symmetrical clamping seats (227); a hinged arm (226) hingedly connecting the clamping seat (227) to the connecting seat (221); a telescopic device (228) arranged on the connecting seat (221) and capable of driving the at least two clamping seats (227) to perform a deflection movement about the hinged arm (226).

5. The temperature zoned quartz reaction chamber for epitaxial growth of silicon as claimed in claim 1 wherein: The number of the first blocking rings (24) is one more than the number of the third blocking rings (12), so that each third blocking ring (12) is distributed with first blocking rings (24) on both sides in the radial direction; The third blocking ring (12) is provided with a heating ring (13).

6. The temperature zoned quartz reaction chamber for silicon epitaxial growth of claim 2, wherein: The carrier (2) also has a plurality of spray heads (26) and an internal gas supply pipe; The plurality of spray heads (26) are circumferentially spaced on the support shaft (25) and correspond to the positions of the first blocking rings (24); The gas supply pipe is internally provided in the support shaft (25) and communicates with the gas inlet of the spray head (26); The spray direction of the spray head (26) is towards the connection between the first blocking ring (24) and the base (21); A plurality of gas collecting holes (11) are provided on the bottom of the chamber (1) near the position of the support shaft (25), and the plurality of gas collecting holes (11) correspond to the plurality of spray heads (26) in position.

7. The temperature zoned quartz reaction chamber for epitaxial growth of silicon as claimed in claim 6 wherein: The outer side of the base (5) is sleeved with a collection bin (7), which covers the gas collecting holes (11) and communicates with the gas collecting holes (11); An interface connected with a detector (8) is provided on the collection bin (7).

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