Heavy doping < 111 > crystal orientation silicon crystal shouldering method, device, equipment and medium

Abstract

The invention discloses a method for re-doping lt; 111gt, 111gt; the invention discloses a crystal orientation silicon crystal shouldering method and device, equipment and a medium, and the method comprises the steps: obtaining the initial power of a heater, and controlling the heater to change the power within a preset time interval according to the power variation in a shouldering parameter preset table; the shouldering parameter preset table is a shouldering parameter table obtained in advance when the shouldering survival rate is not smaller than the preset survival rate; determining first target power according to the actual power, the diameter external expansion speed actual value and the direct external expansion speed set value, controlling the heater power to be adjusted to the first target power, and keeping a preset time interval; and determining a power set value corresponding to the actual power after the preset time interval according to the shouldering parameter preset table, controlling the heater power to be adjusted to a second target power determined by the power set value, and returning to the power adjustment step. According to the technical scheme disclosed by the invention, the actual value of the diameter external expansion speed is changed near the set value through periodic power adjustment, so that the shouldering survival rate and repeatability are improved.

Description

Technical Field

[0001] This application relates to the field of silicon crystal preparation technology, and in particular to a heavily doped silicon crystal preparation method. <111> Methods, apparatus, equipment and media for oriented silicon crystal shoulder formation. Background Technology

[0002] The process of Czochralski single crystal silicon preparation includes processes such as charging, chemical preparation, crystal pulling, necking, shoulder formation, shoulder rotation, constant diameter growth, and finishing.

[0003] Preparation of heavily doped materials using the Czochralski method <111> When crystallizing into silicon, due to <111> The low interplanar spacing of the crystal and the large amount of dopants in the heavily doped crystal make it easy for silicon crystals to lose their single crystal structure (especially during the shoulder formation stage), which makes shoulder formation difficult and results in a low survival rate.

[0004] Traditional shoulder-forming methods pre-determine a temperature gradient based on the shoulder length. During actual shoulder formation, the actual temperature gradient corresponding to the pre-determined shoulder length is determined based on the relationship between the pre-determined shoulder length and the temperature gradient, and the temperature is controlled to change according to the corresponding actual temperature gradient. However, during the shoulder-forming process, factors such as convection within the molten metal, the vacuum level in the furnace, the crystal growth rate, and the stability of the heater can all affect the temperature of the molten metal, leading to temperature deviations. Therefore, using the above method for shoulder formation may cause wire breakage, shoulder formation failure, etc., thereby reducing the repeatability and success rate of shoulder formation.

[0005] In conclusion, improving the repeatability and survival rate of shoulder placement is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] In view of this, the purpose of this application is to provide a heavily doped [product / service]. <111> Methods, apparatus, equipment, and media for forming shoulders in crystal-oriented silicon crystals, used to improve the repeatability and survival rate of shoulder formation.

[0007] To achieve the above objectives, this application provides the following technical solution:

[0008] A heavy doping <111> A method for shoulder formation in crystal-oriented silicon includes: obtaining the initial power of the heater at the start of shoulder formation; and controlling the heater to change its power according to the heater power change amount in a preset shoulder formation parameter preset table within a preset time interval; wherein the preset shoulder formation parameter preset table is a pre-obtained heavily doped... <111> A table of shoulder formation parameters is used when the survival rate of the crystal-oriented silicon crystal shoulder formation is not less than a preset survival rate. The actual power and actual diameter expansion speed of the heater are obtained, and the corresponding diameter expansion speed setting value is obtained according to the preset shoulder formation parameter table. A first target power for the heater is determined based on the actual power, the actual diameter expansion speed value, and the set diameter expansion speed value. The power of the heater is adjusted to the first target power and maintained at the first target power for the preset time interval. A power setting value corresponding to the actual power after the preset time interval is determined according to the preset shoulder formation parameter table. A second target power is determined based on the power setting value. The power of the heater is adjusted from the first target power to the second target power. The process returns to the step of controlling the heater to change power according to the heater power change amount in the preset shoulder formation parameter table within the preset time interval, until the shoulder formation ends.

[0009] Optionally, determining the first target power of the heater based on the actual power, the actual value of the diameter expansion speed, and the set value of the diameter expansion speed includes: determining the first target power of the heater using P1 = P0 + k1 * (L1 - L0); where P1 is the first target power, P0 is the actual power, L1 is the actual value of the diameter expansion speed, L0 is the set value of the diameter expansion speed, and k1 is the first coefficient.

[0010] Optionally, determining the second target power based on the power setting value includes: determining the second target power based on the power setting value, the first target power, and the actual power; or, determining the second target power based on the power setting value, the actual value of the diameter expansion speed, and the diameter expansion speed setting value.

[0011] Optionally, determining the second target power based on the power setting value, the first target power, and the actual power includes: determining the second target power using P3 = P2 + k2 * (P1 - P0); where P3 is the second target power, P2 is the power setting value, P1 is the first target power, P0 is the actual power, and k2 is the second coefficient.

[0012] Optionally, after obtaining the actual value of the diameter expansion speed, the method further includes: determining whether the actual value of the diameter expansion speed is greater than the corresponding upper limit value of the diameter expansion speed or less than the corresponding lower limit value of the diameter expansion speed; wherein the upper limit value of the diameter expansion speed and the lower limit value of the diameter expansion speed are both included in the preset table of shoulder expansion parameters; if the actual value of the diameter expansion speed is greater than the corresponding upper limit value of the diameter expansion speed or less than the corresponding lower limit value of the diameter expansion speed, then shoulder expansion is stopped.

[0013] Optionally, obtaining the actual value of the diameter expansion velocity includes: obtaining the actual value of the diameter expansion velocity from the camera system; wherein the camera system is used to obtain the shoulder diameter value at two sampling times, and determine the actual value of the diameter expansion velocity based on the shoulder diameter value at the two sampling times.

[0014] Optionally, the preset table of shoulder-forming parameters also includes seed crystal lifting speed, seed crystal rotation speed, and crucible rotation speed, and the heavy doping... <111> The method for shoulder placement in a crystal-oriented silicon crystal further includes: during the shoulder placement process, controlling the pulling speed of the seed crystal according to the seed crystal lifting speed, controlling the rotation speed of the seed crystal according to the seed crystal rotation speed, and controlling the rotation speed of the crucible according to the crucible rotation speed.

[0015] A heavy doping <111> A silicon crystal shoulder-forming device includes: a first control module, configured to acquire the initial power of the heater at the start of shoulder formation, and control the heater to change its power according to the heater power change amount in a preset shoulder-forming parameter preset table within a preset time interval; the preset shoulder-forming parameter preset table is a pre-obtained heavy doping parameter table. <111> A table of shoulder formation parameters when the survival rate of the crystal-oriented silicon crystal shoulder formation is not less than a preset survival rate; a second control module, used to obtain the actual power and actual value of the diameter expansion speed of the heater, and obtain the corresponding diameter expansion speed setting value according to the preset shoulder formation parameter table, determine the first target power of the heater according to the actual power, the actual value of the diameter expansion speed and the set value of the diameter expansion speed, control the power of the heater to adjust to the first target power and maintain the first target power for the preset time interval; a third control module, used to determine the power setting value corresponding to the actual power after the preset time interval according to the preset shoulder formation parameter table, determine the second target power according to the power setting value, control the power of the heater to adjust to the second target power, return to execute the step of controlling the heater to change the power according to the heater power change amount in the preset shoulder formation parameter table within the preset time interval, until the shoulder formation ends.

[0016] An electronic device includes: a memory for storing a computer program; and a processor for executing the computer program to implement the heavy doping as described in any of the preceding claims. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

[0017] A readable storage medium storing a computer program, which, when executed by a processor, implements the heavy doping as described in any of the preceding claims. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

[0018] This application provides a heavily doped [material]. <111> A method, apparatus, device, and medium for shoulder formation in crystal-oriented silicon crystals, wherein the method includes: obtaining the initial power of the heater at the start of shoulder formation; and controlling the heater to change its power according to the heater power change amount in a preset shoulder formation parameter preset table within a preset time interval; the preset shoulder formation parameter table is a pre-obtained heavily doped... <111> The table shows the shoulder formation parameters when the survival rate of the crystal-oriented silicon crystal shoulder formation is not less than the preset survival rate; the actual power of the heater and the actual value of the diameter expansion speed are obtained, and the corresponding diameter expansion speed setting value is obtained according to the shoulder formation parameter preset table; the first target power of the heater is determined according to the actual power, the actual value of the diameter expansion speed and the direct expansion speed setting value; the power of the heater is adjusted to the first target power and maintained at the first target power for a preset time interval; the power setting value corresponding to the actual power after the preset time interval is determined according to the shoulder formation parameter preset table; the second target power is determined according to the power setting value; the power of the heater is adjusted to the second target power; the process returns to the step of controlling the heater to change its power according to the heater power change amount in the shoulder formation parameter preset table within the preset time interval, until the shoulder formation ends.

[0019] The technical solution disclosed in this application can periodically adjust the heater power. Within a single power control cycle, it can include a process of adjusting the power according to the change in heater power in the pre-set table of shoulder expansion parameters, and a process of pulse-type adjustment of the heater power based on the difference between the actual value of the diameter expansion speed and the corresponding set value of the diameter expansion speed in the pre-set table of shoulder expansion parameters. This achieves both basic power adjustment according to the pre-set table of shoulder expansion parameters and rapid adjustment of the heater power based on the difference between the actual value of the diameter expansion speed and the corresponding set value of the diameter expansion speed. This allows the actual value of the diameter expansion speed to be adjusted and changed rapidly, while also varying around the set value of the diameter expansion speed included in the pre-set table of shoulder expansion parameters, thereby improving the survival rate of the shoulder and the repeatability of the shoulder expansion process.

[0020] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0021] Figure 1 A heavily doped embodiment provided in this application <111> Flowchart of the method for forming shoulders in crystal-oriented silicon crystals;

[0022] Figure 2A schematic diagram of heater power adjustment provided in an embodiment of this application;

[0023] Figure 3 This application provides an example diagram of a shoulder support structure.

[0024] Figure 4 A heavily doped embodiment provided in this application <111> Schematic diagram of a silicon crystal shoulder-supporting device;

[0025] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0026] The process of Czochralski single crystal silicon preparation includes processes such as charging, chemical preparation, crystal pulling, necking, shoulder formation, shoulder rotation, constant diameter growth, and finishing.

[0027] Preparation of heavily doped materials using the Czochralski method <111> When crystallizing into silicon, due to <111> Crystal orientation and crystal plane supervision have low physical properties, making shoulder formation difficult and with a low survival rate. Moreover, heavily doped crystals, due to the large number of dopants, are prone to losing the single-crystal result (especially in the shoulder formation stage).

[0028] In heavy doping <111> In the process of crystal shoulder formation, the traditional method involves pre-setting a temperature gradient based on the shoulder length. During actual shoulder formation, the actual temperature gradient corresponding to the actual shoulder length is determined based on the relationship between the pre-set shoulder length and the temperature gradient, and the temperature is controlled to change according to the corresponding actual temperature gradient. However, during the shoulder formation process, factors such as convection within the melt, the vacuum level in the furnace, the crystal growth rate, and the stability of the heater can all affect the temperature of the melt, causing temperature deviations. This results in the crystal diameter growth rate being too fast or too slow, which may lead to wire breakage, shoulder formation failure, and other issues during the shoulder formation process, reducing the repeatability and success rate of shoulder formation.

[0029] Therefore, this application provides a heavily doped <111> A method, apparatus, equipment, and medium for shoulder formation in crystal-oriented silicon crystals are disclosed. First, the initial power of the heater at the start of shoulder formation is obtained. Then, within a preset time interval, the heater's power is controlled to vary according to the heater power variation amount specified in a preset shoulder formation parameter table. The preset shoulder formation parameter table contains pre-obtained heavy doping parameters. <111> The shoulder formation success rate of the crystal-oriented silicon crystal is not less than the preset success rate under the shoulder formation parameters. Within a preset time interval, the heater power is controlled to change according to the heater power variation amount in the preset shoulder formation parameter table. The actual power of the heater and the actual value of the diameter expansion speed at this time are obtained. The corresponding diameter expansion speed setting value is obtained from the preset shoulder formation parameter table. Based on the actual and set diameter expansion speed values, the heater power is adjusted from the actual power to a first target power and maintained at the first target power for a preset time interval. This allows for adjustment of the heater power based on the difference between the actual and set diameter expansion speed values, thereby adjusting the melt temperature and changing the actual value of the shoulder diameter expansion speed, so that the actual value of the diameter expansion speed can approach the set diameter expansion speed value. Then, based on the preset shoulder expansion parameter table, the power setting value corresponding to the actual power of the heater after a preset time interval is determined. Based on the power setting value, the second target power of the heater is determined, and the heater power is adjusted from the first target power to the second target power. This avoids the actual diameter expansion speed being too slow or too fast and deviating from the set diameter expansion speed due to prolonged exposure to the first target power, while also ensuring that the actual diameter expansion speed quickly reaches the set diameter expansion speed. Afterward, the process returns to the step of controlling the heater power to change according to the heater power change amount in the preset shoulder expansion parameter table within the preset time interval, i.e., repeating the above process until the shoulder expansion is complete. In other words, this application allows for periodic adjustment of the heater power. Within a single power control cycle, the heater power can be adjusted according to the change in heater power in the pre-set table of shoulder expansion parameters. Furthermore, the heater power can be pulsed based on the actual value of the diameter expansion velocity and the corresponding set value of the diameter expansion velocity in the pre-set table of shoulder expansion parameters. This achieves both basic power adjustment according to the pre-set table of shoulder expansion parameters and rapid adjustment of the heater power based on the actual shoulder expansion situation. This allows for rapid adjustment of the diameter expansion velocity while ensuring that the actual value of the diameter expansion velocity varies near the set value, thereby improving the survival rate of the shoulders and enhancing the repeatability of shoulder expansion. This results in a heavily co-doped product with relatively small shoulder weight error and high shoulder shape repeatability. <111> Silicon crystal with crystal orientation.

[0030] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0031] See Figure 1 and Figure 2 ,in, Figure 1 A heavily doped embodiment provided in this application <111> Flowchart of the method for shoulder formation in crystal-oriented silicon crystals. Figure 2 This is a schematic diagram of heater power adjustment provided in an embodiment of this application. This embodiment of this application also provides a heavily doped... <111> A flowchart of the method for forming shoulders in a silicon crystal with crystal orientation may include:

[0032] S11: Obtain the initial power of the heater at the start of shoulder formation, and control the heater to change its power according to the heater power change amount in the shoulder formation parameter preset table within a preset time interval; the shoulder formation parameter preset table is a pre-obtained heavy doping parameter table. <111> Table of shoulder formation parameters when the survival rate of the crystal-oriented silicon crystal shoulder formation is not less than the preset survival rate.

[0033] In this embodiment, during the loading stage, a heavy dopant (e.g., heavy boron doping) can be applied. The heavy dopant can melt together with the raw materials during loading to form a uniform silicon melt, preparing for the entry of doped atoms into the crystal lattice during subsequent silicon crystal growth. During the crystal pulling stage, the silicon crystal with… <111> A single-crystal seed crystal with a specific crystal orientation is immersed in molten silicon, and epitaxial growth occurs on the surface of the seed crystal. That is, silicon atoms in the molten silicon grow according to the orientation of the seed crystal. <111> The crystal lattice arrangement is deposited, thus inheriting the crystal orientation of the seed crystal.

[0034] After going through stages such as charging, chemical processing, and crystal development, the heavy doping method provided in the embodiments of this application can be used in the shoulder formation stage. <111> A method for shoulder formation in crystal-oriented silicon crystals is used to improve the shoulder formation process. <111> The survival rate and repeatability of shoulder formation in silicon crystals with different crystal orientations. It should be noted that the heavily doped silicon crystals provided in the embodiments of this application... <111> The execution subject of the crystal-oriented silicon crystal shoulder-forming method can be the control system corresponding to the Czochralski single crystal furnace, or it can be a host computer, computer, server, etc. connected to the Czochralski single crystal furnace (that is, the shoulder-forming control can be realized by using a host computer, computer, server, etc. connected to the Czochralski single crystal furnace). In this application embodiment, the execution subject is the control system corresponding to the Czochralski single crystal furnace as an example for illustration.

[0035] Before the shoulder formation begins, a preset shoulder formation parameter table can be obtained in advance. This preset shoulder formation parameter table is a pre-obtained table of heavily doped parameters. <111> The table of shoulder formation parameters is provided for silicon crystals with a shoulder survival rate not less than a preset survival rate. The shoulder formation parameters in this preset table are related to thermal insulation, structural size, crucible size, and the amount of silicon material. The preset survival rate can be a relatively large percentage. For example, the difference between 100% and the preset survival rate can be no greater than a preset difference, such as 5% for a preset survival rate of 95%. In other words, the preset shoulder formation parameter table can be used for heavily doped silicon crystals. <111> A table of shoulder formation parameters for silicon crystals with a shoulder formation survival rate of over 95%. The table of preset shoulder formation parameters includes those for heavily doped silicon. <111> The shoulder formation parameters are set when the survival rate of the silicon crystal shoulder formation is not less than a preset survival rate. For example, the preset shoulder formation parameter table may include the diameter expansion speed setting value, seed crystal lifting speed, and heater power change value corresponding to the shoulder length (there can be multiple shoulder lengths, for example, the total shoulder length can be evenly divided to obtain multiple shoulder lengths). It should be noted that the diameter expansion speed is the diameter change per unit time, and its unit can be mm / min.

[0036] The shoulder development parameter preset table can specifically be based on the shoulder shape with the highest survival rate summarized from numerous experiments, obtaining the diameter expansion rate of the shoulder at different stages, and providing a control method that can perfectly replicate the shoulder shape with a shoulder weight error within 0.3 kg. For example, the shoulder development parameter preset table can be based on heavily boron-doped shoulder shape and utilizes… <111> A table of shoulder formation parameters, derived from numerous experiments using single-crystal seed crystals of specific crystal orientations to achieve a shoulder formation survival rate of over 95% in silicon crystals, can be found in Table 1, which is a preset table of shoulder formation parameters provided in an embodiment of this application. Based on the foregoing, this application provides a heavily doped... <111> The method of creating shoulders in silicon crystals with crystal orientation is applicable to heavily boron-doped crystals. <111> The shoulder formation process of a silicon crystal.

[0037] Table 1. Preset Parameters for Shoulder Support

[0038]

[0039]

[0040] In the preset table of shoulder length parameters, the negative sign of the heater power change indicates that the heater power is reduced. The heater power change is 1.0kW from 0mm to 10mm, 0.9kW from 10mm to 20mm, ..., 0.3kW from 130mm to 140mm. The heater power change is determined in a linear (or uniform) manner within each shoulder length interval. That is, the heater power change rate can be determined based on the total change in shoulder length and the heater power change within each shoulder length interval. The heater power change corresponding to any shoulder length change can be determined based on the heater power change rate and any shoulder length change within the corresponding shoulder length interval. For example, for the shoulder length interval of 0mm-10mm, the heater power change rate can be obtained using 1.0kW / 10mm = 0.1kW / mm. Within this shoulder length interval, the heater power change is 0.1kW for every 1mm change in shoulder length, and 0.5kW for every 5mm change in shoulder length. Furthermore, the diameter expansion speed corresponding to any shoulder length can be calculated based on the diameter expansion speed setting value corresponding to each shoulder length in Table 1. Specifically, the diameter expansion speed setting value changes linearly from 0.15 mm / min to 0.25 mm / min from 0 mm to 10 mm, from 0.25 mm / min to 20 mm, and so on, and from 130 mm to 140 mm, the diameter expansion speed setting value changes linearly from 1.90 mm / min to 1.10 mm / min.

[0041] At the start of shoulder formation, the control system can acquire the initial power P of the heater located on the crucible side, and can control the heater to change power according to the heater power change amount in the shoulder formation parameter preset table within a preset time interval (this preset time interval reflects the adjustment capability of the control system, and this preset time interval is adapted to the thermal field structure. After determining the thermal field structure, the preset time interval adapted to the thermal field structure can be determined in advance through experiments, etc. For example, the preset time interval adapted to a certain thermal field structure can be 150s). Specifically, at the start of shoulder formation (that is, within the first power control cycle), the control system can control the heater to change power from the initial power P according to the heater power change amount in the shoulder formation parameter preset table within the preset time interval. It should be noted that even though there is a correlation between shoulder length and time (the two are correlated when the seed crystal lifting speed is relatively stable during the shoulder formation process, as shown in Table 1, where the shoulder length and time are correlated; for example, based on the seed crystal lifting speed of 0.8 mm / min, the time required for the shoulder length to change from 0 mm to 10 mm is 10 mm / 0.8 mm / min = 12.5 min = 750 s, and it takes 75 s for the shoulder length to change by 1 mm), considering that time is a more stable reference coordinate, in order to avoid the lag in length measurement and to avoid the correlation between length and time being affected by temperature fluctuations, mechanical disturbances, etc., this application embodiment uses time as a reference for heater power control in order to improve process stability and shoulder formation control accuracy, thereby improving the shoulder formation survival rate and the repeatability of shoulder formation.

[0042] For example, the control system can determine the heater power change within a preset time interval based on the shoulder length, seed crystal lifting speed, and heater power change in the preset shoulder parameter table. Then, it can control the heater to change its power according to the determined heater power change within the preset time interval. For example, as shown in Table 1, based on the seed crystal lifting speed of 0.8 mm / min, the time required for the shoulder length to change from 0 mm to 10 mm is determined to be 10 mm / 0.8 mm / min = 12.5 min = 750 s. Therefore, it can be determined that it takes 750 s to go from 0 mm to 10 mm. During these 750 s, the heater power change is a decrease of 1.0 kW. The preset time interval is 150 s, so the heater power change within 150 s is a decrease of 0.2 kW. Therefore, at the start of shoulder formation, the initial power P of the heater can be obtained, and within the preset time interval (150 s), the heater can be controlled to change its power from P in a manner where the heater power change is a decrease of 0.2 kW.

[0043] The above method enables the heater power to be controlled according to the heater power change in the preset table of shoulder formation parameters within a single power control cycle. This allows the diameter expansion rate of the silicon crystal during shoulder formation to vary as close as possible to the diameter expansion rate setting value in the preset table of shoulder formation parameters, thereby improving the success rate and repeatability of shoulder formation.

[0044] S12: Obtain the actual power of the heater and the actual value of the diameter expansion speed, and obtain the corresponding diameter expansion speed setting value according to the shoulder expansion parameter preset table. Determine the first target power of the heater according to the actual power, the actual value of the diameter expansion speed and the diameter expansion speed setting value, and control the power of the heater to be adjusted to the first target power and maintain the first target power for a preset time interval.

[0045] After controlling the heater to change its power according to the heater power change amount in the preset shoulder expansion parameter table within a preset time interval, the actual power P0 of the heater and the actual value of the diameter expansion speed L1 can be obtained. The set value of the diameter expansion speed L0 after a corresponding time length elapsed from the start of shoulder expansion or at a corresponding shoulder length can be obtained according to the preset shoulder expansion parameter table. For example, as shown in Table 1, after a preset time interval of 150s (corresponding to a shoulder length of 2mm) from the start of shoulder expansion (0mm), the set value of the diameter expansion speed L1 can be determined to be 0.17mm / min.

[0046] After obtaining the actual power P0 of the heater, the actual value of the diameter expansion speed L1, and the corresponding diameter expansion speed set value L0, the first target power P1 of the heater can be determined based on the actual power P0, the actual value of the diameter expansion speed L1, and the corresponding diameter expansion speed set value L0. Specifically, the first target power P1 of the heater can be determined based on the difference between the actual value of the diameter expansion speed L1 and the corresponding diameter expansion speed set value L0, and the actual power P0. Then, the heater power is adjusted from the actual power P0 to the first target power P1 (specifically, it can be directly changed from the actual power P0 to the first target power P1), and the heater is controlled to maintain the first target power for a preset time interval. This achieves rapid adjustment of the heater power, thereby rapidly adjusting the temperature of the molten liquid in the crucible, and consequently adjusting the actual value of the diameter expansion rate (as the molten liquid temperature increases, the diameter expansion rate decreases; as the molten liquid temperature decreases, the diameter expansion rate increases), so that the actual value of the diameter expansion rate is close to the set value. At the same time, it prevents the heater power from remaining at the first target power for an extended period (the heater power is only maintained at the first target power for a preset time interval). This avoids prolonged influence on the actual value of the diameter expansion rate, which could cause it to deviate too much from the set value. This reduces the probability of problems such as wire breakage, excessively steep shoulder formation, diameter overshoot, diameter expansion stagnation, and shoulder failure, thereby improving the shoulder survival rate, reducing shoulder weight error, and improving the repeatability of the shoulder formation process. Ultimately, this results in a heavily doped product with high shoulder shape repeatability and a high survival rate. <111> Silicon crystal.

[0047] S13: Determine the power setting value corresponding to the actual power after a preset time interval according to the shoulder release parameter preset table, determine the second target power according to the power setting value, control the heater power to adjust from the first target power to the second target power, return to execute the step of controlling the heater to change the power according to the heater power change amount in the shoulder release parameter preset table within the preset time interval, until the shoulder release ends.

[0048] After obtaining the actual power P0 of the heater, the control system can determine the power setpoint P2 corresponding to the actual power P0 of the heater after a preset time interval based on the heater power change in the preset parameter table. For example, as shown in Table 1, it can be determined that the heater power change corresponding to the actual power P0 of the heater after a preset time interval of 150s in the first power control cycle is a decrease of 0.2kW. Therefore, the magnitude of the power setpoint P2 corresponding to the actual power P0 of the heater after the preset time interval can be determined. After determining the power setpoint P2 corresponding to the actual power P0 of the heater after the preset time interval, the second target power P3 of the heater can be determined based on the power setpoint P2.

[0049] After adjusting the power of the heater to the first target power P1 and controlling the heater to maintain the first target power P1 at a preset time interval, the power of the heater can be adjusted from the first target power P1 to the second target power P3 so that the heater power will not remain at the first target power for a long time. This allows the actual value of the diameter expansion speed to vary around the set value of the diameter expansion speed, thereby improving the survival rate and repeatability of the shoulder formation.

[0050] By adjusting the heater power from the actual power P0 to a first target power P1 determined based on the actual diameter expansion velocity L1 and the corresponding diameter expansion velocity setpoint L0, and maintaining this first target power P1 for a preset time interval, and then adjusting it from the first target power P1 to a second target power P3 determined based on the power setpoint P2 (specifically determined based on the heater power variation in the shoulder formation parameter preset table and the actual heater power P0), pulse-like adjustment of the heater power is achieved within a single power control cycle based on the actual diameter expansion velocity and the corresponding diameter expansion velocity setpoint in the shoulder formation parameter preset table. This ensures that the single power control cycle includes a rapid adjustment portion of the heater power, achieving both rapid adjustment of the diameter expansion velocity and allowing the actual diameter expansion velocity to vary near the diameter expansion velocity setpoint. This guarantees a high success rate for shoulder formation and shoulder shape repeatability, resulting in a heavily doped product with relatively small shoulder weight error and high shoulder shape repeatability. <111> Crystal-oriented silicon crystals reduce wasted time due to wire breakage and increase production capacity.

[0051] After adjusting the heater power from the first target power to the second target power, the system can return to the step of controlling the heater to change power according to the heater power change amount in the preset table of discharge parameters within a preset time interval. At this time, the control system can control the heater to change power from the first target power according to the heater power change amount in the preset table of discharge parameters within a preset time interval. That is, the second target power can be used as the initial power for the next power control cycle to enter the next power control cycle. In this way, the heater power is periodically adjusted until the discharge ends.

[0052] Additionally, it should be noted that during the process from the start to the end of shoulder placement, the pulling speed of the seed crystal is controlled according to the seed crystal lifting speed contained in the preset shoulder placement parameter table, so that the seed crystal moves upward according to the seed crystal lifting speed in the preset shoulder placement parameter table.

[0053] This application embodiment achieves periodic adjustment of heater power throughout the entire shoulder-forming process. Each power control cycle includes controlling the heater to change power according to the heater power variation in the shoulder-forming parameter preset table within a preset time interval, and pulse-like adjustment of the heater power based on the difference between the actual diameter expansion speed and the corresponding diameter expansion speed setpoint in the shoulder-forming parameter preset table. This allows the actual diameter expansion speed to be adjusted rapidly and to vary near the diameter expansion speed setpoint in the shoulder-forming parameter preset table, thereby improving the shoulder survival rate (within this range, the shoulder survival rate can reach above the preset survival rate; for example, within this range, the shoulder survival rate can reach above 95%), and improving the repeatability of shoulder forming. This results in a heavily co-admixed product with relatively small shoulder weight error (within 0.3 kg) and high shoulder shape repeatability. <111> Silicon crystal with crystal orientation.

[0054] The technical solutions disclosed in this application can periodically adjust the heater power. Within a single power control cycle, the process can include adjusting the power according to the change in heater power in the pre-set table of shoulder expansion parameters, and can also include a process of pulse-type adjustment of the heater power based on the difference between the actual value of the diameter expansion speed and the corresponding set value of the diameter expansion speed in the pre-set table of shoulder expansion parameters. This achieves both basic power adjustment according to the pre-set table of shoulder expansion parameters and rapid adjustment of the heater power based on the difference between the actual value of the diameter expansion speed and the corresponding set value of the diameter expansion speed. This allows the actual value of the diameter expansion speed to be adjusted and changed rapidly, while also varying around the set value of the diameter expansion speed included in the pre-set table of shoulder expansion parameters, thereby improving the survival rate of the shoulder and the repeatability of the shoulder expansion process.

[0055] This application provides an embodiment of a heavy doping method. <111> A method for forming shoulders in a silicon crystal with crystal orientation, which determines the first target power of the heater based on the actual power, the actual value of the diameter expansion rate, and the set value of the diameter expansion rate, may include:

[0056] The first target power of the heater is determined using P1 = P0 + k1*(L1 - L0);

[0057] Wherein, P1 is the first target power, P0 is the actual power, L1 is the actual value of the diameter expansion speed, L0 is the set value of the diameter expansion speed, and k1 is the first coefficient.

[0058] In this embodiment of the application, when determining the first target power P1 of the heater based on the actual power P0, the actual value of the diameter expansion speed L1 and the corresponding diameter expansion speed setting value L0, the first target power P1 of the heater can be determined by P1 = P0 + k1 * (L1 - L0), that is, the adjustment range of the heater power can be determined.

[0059] Here, k1 is the first coefficient, representing the adjustment capability of the control system. This first coefficient k1 is adapted to the thermal field structure. After determining the thermal field structure, the first coefficient k1 can be pre-determined through experiments to improve the survival rate and repeatability of the expansion. If the first coefficient k1 is set too large, the heater power adjustment range will be too large, resulting in rapid changes in the melt temperature and over-adjustment of the diameter expansion speed. If the first coefficient k1 is set too small, the heater power adjustment range will be too small, resulting in slow changes in the melt temperature and almost no change in the actual diameter expansion speed, still deviating from the set value. Specifically, the value of the first coefficient k1 can be pre-determined through experiments. For example, the first coefficient k1 can be set to 12 (i.e., the first target power P1 of the heater can be calculated using P1 = P0 + 12 * (L1 - L0)). Setting the first coefficient k1 to 12 ensures a reasonable heater power adjustment range, avoiding excessive or insufficient adjustments.

[0060] This application provides an embodiment of a heavy doping method. <111> The method for forming a shoulder on a silicon crystal with crystal orientation, which determines a second target power based on a power setpoint, may include:

[0061] The second target power is determined based on the power setting value, the first target power, and the actual power.

[0062] Alternatively, the second target power can be determined based on the power setting value, the actual value of the diameter expansion speed, and the diameter expansion speed setting value.

[0063] In the embodiments of this application, when determining the second target power P3 based on the power setting value P2, the second target power P3 can be determined based on the power setting value P2, the first target power P1, and the actual power P0. Specifically, the second target power P3 can be determined based on the difference between the first target power P1 and the actual power P0 and the actual power P0.

[0064] Furthermore, based on P1=P0+k1*(L1-L0), the difference between the first target power P1 and the actual power P0 can be represented by the difference between the actual value of the diameter expansion speed L1 and the corresponding diameter expansion speed setting value L0. Therefore, in addition to determining the second target power P3 based on the power setting value P2, the first target power P1, and the actual power P0, the second target power P3 can also be determined based on the power setting value P2, the actual value of the diameter expansion speed L1, and the corresponding diameter expansion speed setting value L0. Specifically, the second target power P3 can be determined based on the difference between the actual value of the diameter expansion speed L1 and the corresponding diameter expansion speed setting value L0, and the actual power P0.

[0065] Determining the second target power P3 using the above method and then adjusting the heater power from the first target power P1 to the second target power P3 allows for a more reasonable adjustment of the melt temperature. This not only ensures that the diameter expansion rate returns to the corresponding set value but also allows it to return to the set value more quickly, thereby improving the shoulder survival rate and resulting in heavily doped shoulders with high repeatability and small shoulder weight error. <111> Silicon crystal with crystal orientation.

[0066] This application provides an embodiment of a heavy doping method. <111> The method for shoulder formation in crystal-oriented silicon, which determines the second target power based on the power setting value, the first target power, and the actual power, may include:

[0067] The second target power is determined using P3 = P2 + k2*(P1 - P0);

[0068] Where P3 is the second target power, P2 is the power setting value, P1 is the first target power, P0 is the actual power, and k2 is the second coefficient.

[0069] In this embodiment of the application, when determining the second target power P3 based on the power setting value P2, the first target power P1 and the actual power P0, the second target power P3 can be calculated using P3 = P2 + k2 * (P1 - P0).

[0070] Among them, k2 is the second coefficient, which represents the adjustment capability of the control system. The second coefficient k2 is adapted to the thermal field structure. After the thermal field structure is determined, the second coefficient k2 adapted to the thermal field structure can be determined in advance through experiments, so as to improve the survival rate and repeatability of the seedlings.

[0071] For example, for a certain thermal field structure, the second coefficient k2 that is adapted to it can be 0.1, that is, the second target power P3 can be calculated using P3 = P2 + 0.1 * (P1 - P0). The first coefficient k1 that is adapted to it can be 12. Then, the specific way to determine the second target power P3 based on the power setting value P2, the actual value of the diameter expansion speed L1, and the diameter expansion speed setting value L0 is P3 = P2 + 0.1 * 12 * (L1 - L0) = P2 + 1.2 * (L1 - L0). Adjusting the heater power in this way can make the actual value of the diameter expansion speed fluctuate around the diameter expansion speed setting value, and avoid the difference between the actual value of the diameter expansion speed and the diameter expansion speed setting value being too large, thereby improving the survival rate of the shoulder and improving the repeatability of the shoulder. Specifically, as shown in the figure... Figure 3 As shown in the figure, an example of a shoulder support provided in this application embodiment is illustrated. Figure 3The horizontal axis represents the shoulder length, and the vertical axis represents the diameter expansion rate (Lateral growth). The black curve represents the Lateral growth Target (diameter expansion rate setting value) curve, i.e., the curve of the diameter expansion rate setting value changing with the shoulder length in the shoulder parameter preset table (i.e., the diameter expansion rate setting value change curve). The orange curve represents the curve of the actual diameter expansion rate changing with the shoulder length when shouldering is performed according to the shouldering method provided in this application embodiment (using a preset time interval, a first coefficient, and a second coefficient adapted to the thermal field structure to participate in shouldering, for example: a preset time interval of 150s, a first coefficient k1 of 12, and a second coefficient k2 of 0.1) (i.e., the curve of the actual diameter expansion rate changing with the shoulder length obtained by shouldering according to the shouldering method provided in this application embodiment). The orange curve indicates successful shouldering. The blue curve represents the curve of the actual diameter expansion rate changing with the shoulder length obtained when the heater power is periodically adjusted but the preset time interval, the first coefficient, and the second coefficient adapted to the thermal field structure are not used for shouldering. The blue curve shows a break in the shouldering process. Figure 3 It is understood that by using a preset time interval, a first coefficient, and a second coefficient adapted to the thermal field structure in the process of shoulder formation, based on the periodic adjustment of the heater power, the actual value of the diameter expansion speed can better fluctuate around the set value of the diameter expansion speed. This can reduce the degree to which the actual value of the diameter expansion speed deviates from the set value, and minimize the situation where the actual value of the diameter expansion speed deviates too much from the set value and becomes out of control, making it impossible to adjust to fluctuate near the set value. Thus, the survival rate and repeatability of shoulder formation can be further improved through the embodiments of this application.

[0072] This application provides an embodiment of a heavy doping method. <111> The method for shoulder formation in crystal-oriented silicon crystals, after obtaining the actual value of the diameter expansion rate, may further include:

[0073] Determine whether the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value; whereby the upper limit value and the lower limit value of the diameter expansion speed are both included in the preset table of shoulder expansion parameters;

[0074] If the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value, then the shoulder expansion should be stopped.

[0075] In this embodiment, the preset shoulder expansion parameter table may further include an upper limit value and a lower limit value for the diameter expansion speed. After obtaining the actual value of the diameter expansion speed, the corresponding upper limit value and the corresponding lower limit value for the diameter expansion speed can be determined according to the preset shoulder expansion parameter table, and it can be determined whether the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value. For example, see [link to relevant documentation]. Figure 3 , Figure 3 The red curve above the black curve is the Lateral growth UCL (Upper Limit Control of Outer Expansion Speed) curve (i.e., the curve showing the change of the upper limit value of the diameter expansion speed), and the red curve below the black curve is the Lateral growth LCL (Lower Limit Control of Outer Expansion Speed) curve (i.e., the curve showing the change of the lower limit value of the diameter expansion speed).

[0076] If the actual value of the diameter expansion speed is determined to be greater than the corresponding upper limit or less than the corresponding lower limit, it indicates that the shoulder formation will fail. Therefore, shoulder formation can be stopped after the actual value of the diameter expansion speed is determined to be greater than the corresponding upper limit or less than the corresponding lower limit, in order to improve the shoulder formation success rate, reduce the waste of raw materials, shorten the ineffective process time, improve equipment utilization, and reduce equipment wear and maintenance costs.

[0077] If the actual value of the diameter expansion speed is determined to be neither greater than the corresponding upper limit value of the diameter expansion speed nor less than the corresponding lower limit value of the diameter expansion speed, it indicates that the probability of subsequent shoulder failure is relatively small. Therefore, the heater power can be adjusted. That is, after obtaining the actual value of the diameter expansion speed and the corresponding diameter expansion speed setting value, the steps such as determining the first target power of the heater based on the actual power and the actual value of the diameter expansion speed (i.e., the diameter expansion speed setting value) can be performed.

[0078] This application provides an embodiment of a heavy doping method. <111> Methods for shoulder formation in silicon crystals with crystal orientation, to obtain the actual value of the diameter expansion rate, may include:

[0079] Obtain the actual value of the diameter expansion velocity from the camera system;

[0080] The camera system is used to acquire the shoulder diameter value at two sampling times, and to determine the actual value of the diameter expansion speed based on the shoulder diameter value at the two sampling times.

[0081] In this embodiment, a camera system can be used to calculate the actual value of the diameter expansion speed in real time. Specifically, the camera system can acquire the shoulder diameter values ​​at two sampling times, obtain the change in shoulder diameter based on the shoulder diameter values ​​at the two sampling times, and determine the actual value of the diameter expansion speed based on the change in shoulder diameter and the time change between the two sampling times. The control system can obtain the actual value of the diameter expansion speed from the camera system to control the heater power, etc., based on the actual value of the diameter expansion speed.

[0082] The above method enables non-contact and high-precision acquisition of the actual value of the diameter expansion speed, which facilitates accurate control of the heater power and further improves the survival rate and repeatability of the shoulder formation.

[0083] This application provides an embodiment of a heavy doping method. <111> The method for shoulder formation in silicon crystals with crystal orientation can include seed crystal lifting speed, seed crystal rotation speed, and crucible rotation speed in the preset parameter table. (Heavily doped) <111> Methods for creating shoulders in silicon crystals with different crystal orientations may also include:

[0084] During the shoulder-forming process, the pulling speed of the seed crystal is controlled according to the seed crystal lifting speed, the rotation speed of the seed crystal is controlled according to the seed crystal rotation speed, and the rotation speed of the crucible is controlled according to the crucible rotation speed.

[0085] In this embodiment, the preset parameter table for shoulder formation may further include seed crystal lifting speed, seed crystal rotation speed, and crucible rotation speed. Based on this, heavy doping... <111> The method for shoulder formation in crystal-oriented silicon crystals can also include controlling the pulling speed of the seed crystal based on the seed crystal lifting speed, controlling the rotation speed of the seed crystal based on the seed crystal rotation speed, and controlling the rotation speed of the crucible based on the crucible rotation speed during the shoulder formation process. This effectively ensures the repeatability of the shoulder shape and the high survival rate of the shoulder formation, reduces the time wasted on wire breakage, and increases production capacity.

[0086] This application also provides a heavy doping embodiment. <111> See also: A device for oriented silicon crystal shoulder formation. Figure 4 This is a heavily doped method provided in the embodiments of this application. <111> A schematic diagram of the structure of a silicon crystal shoulder-forming device may include:

[0087] The first control module 41 is used to acquire the initial power of the heater at the start of the shoulder formation and control the heater to change its power according to the heater power change amount in the preset shoulder formation parameter table within a preset time interval; the preset shoulder formation parameter table is a pre-obtained heavy doping parameter table. <111> Table of shoulder formation parameters when the survival rate of shoulder formation in crystal-oriented silicon crystals is not less than the preset survival rate;

[0088] The second control module 42 is used to obtain the actual power of the heater and the actual value of the diameter expansion speed, and obtain the corresponding diameter expansion speed setting value according to the shoulder expansion parameter preset table. It determines the first target power of the heater according to the actual power, the actual value of the diameter expansion speed and the diameter expansion speed setting value, and controls the power of the heater to be adjusted to the first target power and maintain the first target power for a preset time interval.

[0089] The third control module 43 is used to determine the power setting value corresponding to the actual power after a preset time interval according to the shoulder release parameter preset table, determine the second target power according to the power setting value, control the power of the heater to adjust to the second target power, and return to execute the step of controlling the heater to change the power according to the heater power change amount in the shoulder release parameter preset table within the preset time interval until the shoulder release ends.

[0090] This application provides an embodiment of a heavy doping method. <111> The second control module 42 of the silicon crystal shoulder placement device may include:

[0091] The first determining unit is used to determine the first target power of the heater using P1 = P0 + k1 * (L1 - L0); where P1 is the first target power, P0 is the actual power, L1 is the actual value of the diameter expansion speed, L0 is the set value of the diameter expansion speed, and k1 is the first coefficient.

[0092] This application provides an embodiment of a heavy doping method. <111> The third control module 43 of the silicon crystal shoulder placement device may include:

[0093] The second determining unit is used to determine the second target power based on the power setting value, the first target power and the actual power;

[0094] Alternatively, the third determining unit is used to determine the second target power based on the power setting value, the actual value of the diameter expansion speed, and the diameter expansion speed setting value.

[0095] This application provides an embodiment of a heavy doping method. <111> The second determining unit of the silicon crystal shoulder-forming device may include:

[0096] A subunit is determined to determine the second target power using P3 = P2 + k2 * (P1 - P0); where P3 is the second target power, P2 is the power setting value, P1 is the first target power, P0 is the actual power, and k2 is the second coefficient.

[0097] This application provides an embodiment of a heavy doping method. <111> The silicon crystal shoulder-setting device may further include:

[0098] The judgment module is used to determine whether the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value after obtaining the actual value of the diameter expansion speed; wherein the upper limit value and the lower limit value of the diameter expansion speed are both included in the preset table of shoulder expansion parameters;

[0099] The shoulder expansion stop module is used to stop shoulder expansion if the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value.

[0100] This application provides an embodiment of a heavy doping method. <111> The second control module 42 of the silicon crystal shoulder placement device may include:

[0101] The acquisition unit is used to acquire the actual value of the diameter expansion velocity from the camera system; wherein, the camera system is used to acquire the shoulder diameter value at two sampling times, and determine the actual value of the diameter expansion velocity based on the shoulder diameter value at the two sampling times.

[0102] This application provides an embodiment of a heavy doping method. <111> The shoulder-forming device for silicon crystal orientation can also include seed crystal lifting speed, seed crystal rotation speed, and crucible rotation speed in its preset parameter table, and is heavily doped. <111> The crystal-oriented silicon crystal shoulder-forming device may also include:

[0103] The fourth control module is used to control the pulling speed of the seed crystal according to the seed crystal lifting speed, the rotation speed of the seed crystal according to the seed crystal rotation speed, and the rotation speed of the crucible according to the crucible rotation speed during the shoulder-forming process.

[0104] This application also provides an electronic device, see [link to relevant documentation] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application, which may include:

[0105] Memory 51 is used to store computer programs;

[0106] Processor 52, when executing a computer program stored in memory 51, can implement any of the above-mentioned heavy doping methods. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

[0107] This application also provides a readable storage medium storing a computer program, which, when executed by a processor, can implement any of the aforementioned heavy doping methods. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

[0108] This application provides an embodiment of a heavy doping method. <111> For a description of the relevant parts in the crystal-oriented silicon crystal shoulder-forming device, electronic device, and readable storage medium, please refer to the heavily doped example provided in the embodiments of this application. <111> The detailed explanation of the corresponding part of the method for creating shoulders in crystal-oriented silicon crystals will not be repeated here.

[0109] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable medium may be paper or other suitable media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0110] It should be understood that various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0111] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0112] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0113] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0114] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A heavily doped <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, include: The initial power of the heater at the start of shoulder formation is obtained, and the heater is controlled to change power according to the heater power change amount in the preset shoulder formation parameter table within a preset time interval; the preset shoulder formation parameter table is a pre-obtained heavy doping parameter table. <111> Table of shoulder formation parameters when the survival rate of shoulder formation in crystal-oriented silicon crystals is not less than the preset survival rate; The actual power and actual diameter expansion speed of the heater are obtained, and the corresponding diameter expansion speed setting value is obtained according to the shoulder expansion parameter preset table. The first target power of the heater is determined according to the actual power, the actual diameter expansion speed and the diameter expansion speed setting value. The power of the heater is controlled to be adjusted to the first target power and maintained at the first target power for the preset time interval. Based on the preset table of shoulder release parameters, determine the power setting value corresponding to the actual power after the preset time interval, determine the second target power based on the power setting value, control the power of the heater to be adjusted from the first target power to the second target power, and return to execute the step of controlling the heater to change the power according to the heater power change amount in the preset table of shoulder release parameters within the preset time interval, until the shoulder release is completed.

2. The heavy doping method according to claim 1 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, Determining the first target power of the heater based on the actual power, the actual value of the diameter expansion speed, and the set value of the diameter expansion speed includes: The first target power of the heater is determined using P1 = P0 + k1*(L1 - L0); Wherein, P1 is the first target power, P0 is the actual power, L1 is the actual value of the diameter expansion speed, L0 is the set value of the diameter expansion speed, and k1 is the first coefficient.

3. The heavy doping method according to claim 1 or 2 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, Determining the second target power based on the power setpoint includes: The second target power is determined based on the power setting value, the first target power, and the actual power. Alternatively, the second target power can be determined based on the power setting value, the actual value of the diameter expansion speed, and the diameter expansion speed setting value.

4. The heavy doping method according to claim 3 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, Determining the second target power based on the power setting value, the first target power, and the actual power includes: The second target power is determined using P3 = P2 + k2*(P1 - P0); Wherein, P3 is the second target power, P2 is the power setting value, P1 is the first target power, P0 is the actual power, and k2 is the second coefficient.

5. The heavy doping method according to claim 1 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, After obtaining the actual value of the diameter expansion velocity, the following is also included: Determine whether the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value; wherein, the upper limit value and the lower limit value of the diameter expansion speed are both included in the preset table of shoulder expansion parameters; If the actual value of the diameter expansion speed is greater than the corresponding upper limit value or less than the corresponding lower limit value, then the shoulder expansion is stopped.

6. The heavy doping method according to claim 1 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, Obtain the actual value of the diameter expansion velocity, including: The actual value of the diameter expansion velocity is obtained from the camera system; The camera system is used to acquire the shoulder diameter value at two sampling times, and to determine the actual value of the diameter expansion speed based on the shoulder diameter value at the two sampling times.

7. The heavy doping method according to claim 1 <111> The method for forming shoulders in a silicon crystal with crystal orientation is characterized by, The preset parameter table for shoulder formation also includes seed crystal lifting speed, seed crystal rotation speed, and crucible rotation speed, and the heavy doping... <111> Methods for creating shoulders in silicon crystals with crystal orientation also include: During the shoulder-forming process, the pulling speed of the seed crystal is controlled according to the seed crystal lifting speed, the rotation speed of the seed crystal is controlled according to the seed crystal rotation speed, and the rotation speed of the crucible is controlled according to the crucible rotation speed.

8. A heavily doped <111> A silicon crystal shoulder-forming device with crystal orientation, characterized in that, include: The first control module is used to acquire the initial power of the heater at the start of shoulder formation and control the heater to change its power according to the heater power change amount in the preset shoulder formation parameter table within a preset time interval; the preset shoulder formation parameter table is a pre-obtained heavy doping parameter table. <111> Table of shoulder formation parameters when the survival rate of shoulder formation in crystal-oriented silicon crystals is not less than the preset survival rate; The second control module is used to obtain the actual power and actual value of the diameter expansion speed of the heater, and obtain the corresponding diameter expansion speed setting value according to the shoulder expansion parameter preset table. It determines the first target power of the heater according to the actual power, the actual value of the diameter expansion speed and the diameter expansion speed setting value, and controls the power of the heater to be adjusted to the first target power and maintains the first target power for the preset time interval. The third control module is used to determine the power setting value corresponding to the actual power after the preset time interval according to the preset shoulder release parameter table, determine the second target power according to the power setting value, control the power of the heater to adjust to the second target power, and return to execute the step of controlling the heater to change the power according to the heater power change amount in the preset shoulder release parameter table within the preset time interval until the shoulder release ends.

9. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor, configured to implement the heavy doping as described in any one of claims 1 to 7 when executing the computer program. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

10. A readable storage medium, characterized in that, The readable storage medium stores a computer program that, when executed by a processor, implements the heavy doping as described in any one of claims 1 to 7. <111> Steps for the method of forming shoulders in crystal-oriented silicon crystals.

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