Electronic device and method of manufacturing same

Abstract

An electronic device and a method of manufacturing the electronic device. An electronic device includes a substrate including a contact including a contact first lateral side and a contact second lateral side. A contact first external terminal extends outwardly from the contact first lateral side. A contact second external terminal extends outwardly from the contact first lateral side and is separated from the contact first external terminal by a gap. An electronic component is coupled to the contacts. An encapsulant covers the substrate and the electronic component. The encapsulant includes an encapsulant top side, an encapsulant bottom side opposite the encapsulant top side, and an encapsulant lateral side. The contact first external terminal and the contact second external terminal are exposed from the encapsulant. The underside of the contact is exposed from the top side of the enclosure. The encapsulant covers a portion of the gap proximate to the first lateral side of the contact. Other examples and related methods are disclosed herein.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to electronic devices, and more particularly to semiconductor devices and methods of manufacturing semiconductor devices. BACKGROUND

[0002] Prior semiconductor packages and methods for forming semiconductor packages are inadequate, for example, causing excessive cost, reduced reliability, relatively low performance, or too large package size. Other limitations and disadvantages of conventional and traditional approaches will become apparent to one of ordinary skill in the art through comparison of such approaches with the present disclosure, in conjunction with the following drawings and description. SUMMARY

[0003] In some applications, an electronic component, such as a semiconductor device, can be encapsulated within a package body, where the semiconductor device can be protected from harsh environments and electrical interconnection between the semiconductor die and a next level assembly, such as a printed circuit board (PCB) or motherboard, is achieved. The components of an electronic package can generally include a conductive substrate, such as a metal leadframe, one or more semiconductor devices, a bonding material for attaching the semiconductor devices to the leadframe, interconnects that electrically connect the semiconductor devices to individual leads of the leadframe, and an encapsulation material that covers the semiconductor devices and forms the external shape of the electronic package, often referred to as a package body.

[0004] In some examples, a metal leadframe can be fabricated by chemically etching or mechanically stamping a metal strip. Portions of the leadframe can be inside the package body. Portions of individual leads of the leadframe can extend outward from the package body, or can be partially exposed to facilitate electrical coupling of the electronic package to other components.

[0005] This specification includes structures and related methods relating to packaged electronic devices including electronic components, such as power components, semiconductor components, and / or passive components, among other features. Examples of packaged electronic devices relevant to the present disclosure can include, but are not limited to, dual-in-line packages, MicroLead These packaged electronic devices can include a conductive substrate, such as a metal leadframe with die attach pads, and can be inside or exposed from an encapsulation material. In some examples, the packaged electronic devices can include conductive materials, such as copper (Cu), nickel (Ni), gold (Au), silver (Ag), palladium (Pd), iron (Fe), and other structures in an integrated leadframe, and can also include insulating materials, such as epoxy molding compounds.

[0006] The present description relates to electronic modules that include power modules that can perform various electrical functions, including but not limited to power conversion. These power conversion examples include, but are not limited to, half-bridge converters (e.g., including two switching elements) or full-bridge converters (e.g., including four switching elements). These power converters can include various power conversion devices, such as alternating current (AC) to direct current (DC) converters, DC-DC converters, or DC-AC converters, and can convert or regulate power to meet various power requirements depending on the application. Those skilled in the art will appreciate that although the following description focuses on various leadframe-free (Pb) based structures, the same implementation principles can be applied to lead-based leadframe packages.

[0007] In some examples, the present description relates to power modules that are configured to include two or more power semiconductor devices within a small form factor and use top-exposed contacts to facilitate heat dissipation. In some examples, the contacts are configured as first current-carrying terminals for the power module, such as drain contacts, and are provided with first and second external terminals extending from a side of the contacts for connection to a next-level assembly. In some examples, the first external terminal extends in a first direction and the second external terminal extends in a second direction. In some examples, the first and second external terminals are laterally separated by a gap or void configured to reduce a height deviation between the first and second external terminals that is empirically found to improve joint reliability.

[0008] In some examples, a chamfer cut is provided in the contact between the first and second external terminals that is empirically found to reduce warpage and stress when manufacturing the power module. In some examples, a groove is provided in the first and second external terminals proximate to an edge of the contact to improve adhesion between the contact and the package encapsulation. In some examples, the power module includes a second current-carrying terminal, such as a source terminal, that is provided with a partial-embossed portion configured to improve adhesion between the source terminal and the package encapsulation.

[0009] The power module of the present description is further described in a non-limiting power conversion implementation comprising a DC / DC half bridge for single phase applications to illustrate an example of its design flexibility. Those skilled in the art will appreciate that the power module of the present description is also suitable for other applications.

[0010] While the present description describes leadframe-type substrates, it should be understood that the present disclosure is also applicable to other types of substrates, including, for example, laminate substrates and other substrates known to those skilled in the art. Those skilled in the art will appreciate that while the following description focuses on various lead-free (Pb) based leadframe structures, the same implementation principles are applicable to lead-based leadframe packages.

[0011] In an example, an electronic device includes a substrate comprising a first contact including a first contact top side, a first contact bottom side opposite the first contact top side, a first contact first lateral side, and a first contact second lateral side opposite the first contact first lateral side. The substrate includes a first contact first external terminal coupled to and extending outwardly from the first contact first lateral side and a first contact second external terminal coupled to and extending outwardly from the first contact first lateral side. The first contact second external terminal is separated from the first contact first external terminal by a gap. The substrate includes a second contact proximate to and laterally separated from the first contact second lateral side, a second contact first external terminal coupled to and extending outwardly from the second contact, and a second contact second external terminal coupled to and extending outwardly from the second contact. The substrate includes a third contact proximate to and laterally separated from the first contact second lateral side and a third contact first external terminal coupled to and extending outwardly from the third contact. A first electronic component includes a first electronic component top side and a first electronic component bottom side opposite the first electronic component top side. The first electronic component bottom side is coupled to the first contact top side, a first portion of the first electronic component top side is electrically coupled to the second contact, and a second portion of the first electronic component is electrically coupled to the third contact. An encapsulant covers the substrate and the first electronic component. The encapsulant includes an encapsulant top side, an encapsulant bottom side opposite the encapsulant top side, and an encapsulant lateral side. The first contact first external terminal, the first contact second external terminal, the second contact first external terminal, the second contact second external terminal, and the third contact first external terminal are exposed from the encapsulant. The first contact bottom side is exposed from the encapsulant top side. The encapsulant covers a portion of the gap proximate to the first contact first lateral side.

[0012] In an example, an electronic device includes a first modular electronic package. The first modular electronic package includes a first current-carrying contact including a first side, a second side opposite the first side, a first lateral side, and a second lateral side opposite the first lateral side; a first external terminal coupled to and extending from the first current-carrying contact; a second current-carrying contact; a second external terminal coupled to and extending from the second current-carrying contact; a first control contact; a first control contact external terminal coupled to and extending from the first control contact; a second control contact; and a second control contact external terminal coupled to and extending from the second control contact. The first modular electronic package includes a first electronic component including a first electronic component top side and a first electronic component bottom side opposite the first electronic component top side, where the first electronic component bottom side is coupled to the first side of the first current-carrying contact, a first portion of the first electronic component top side is coupled to the second current-carrying contact, and a second portion of the first electronic component top side is coupled to the first control contact. The first modular electronic package includes a second electronic component including a second electronic component top side and a second electronic component bottom side opposite the second electronic component top side, where the second electronic component bottom side is coupled to the first side of the first current-carrying contact, a first portion of the second electronic component top side is coupled to the second current-carrying contact, and a second portion of the second electronic component top side is coupled to the second control contact. The first modular electronic package includes a first encapsulant covering the first substrate, the first electronic component, and the second electronic component. The first encapsulant includes a first encapsulant top side, a first encapsulant bottom side opposite the first encapsulant top side, a first encapsulant first lateral side, and a first encapsulant second lateral side opposite the first encapsulant first lateral side. The second side of the first current-carrying contact is exposed from the first encapsulant top side. The first external terminal is exposed from the first encapsulant at the first encapsulant first lateral side. The second external terminal, the first control contact external terminal, and the second control contact external terminal are exposed from the first encapsulant at the first encapsulant second lateral side.

[0013] In an example, a method of manufacturing an electronic device includes providing a substrate, the substrate comprising: a first contact comprising a first contact top side, a first contact bottom side opposite the first contact top side, a first contact first lateral side, and a first contact second lateral side opposite the first contact first lateral side; a first contact first external terminal coupled to and extending outward from the first contact first lateral side; a first contact second external terminal coupled to and extending outward from the first contact first lateral side, wherein the first contact second external terminal is separated from the first contact first external terminal by a gap; a second contact proximate to and laterally separated from the first contact second lateral side; a second contact first external terminal coupled to and extending outward from the second contact; a second contact second external terminal coupled to and extending outward from the second contact; a third contact proximate to and laterally separated from the first contact second lateral side; and a third contact first external terminal coupled to and extending outward from the third contact. The method includes providing a first electronic component, the first electronic component comprising a first electronic component top side and a first electronic component bottom side opposite the first electronic component top side, wherein the first electronic component bottom side is coupled to the first contact top side, a first portion of the first electronic component top side is electrically coupled to the second contact, and a second portion of the first electronic component is electrically coupled to the third contact. The method includes providing an encapsulant, the encapsulant covering the substrate and the first electronic component. The encapsulant comprises an encapsulant top side, an encapsulant bottom side opposite the encapsulant top side, and an encapsulant lateral side. The first contact first external terminal, the first contact second external terminal, the second contact first external terminal, the second contact second external terminal, and the third contact first external terminal are exposed from the encapsulant. The first contact bottom side is exposed from the encapsulant top side. The encapsulant covers a portion of the gap proximate to the first contact first lateral side. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1A 、 Figure 1B and Figure 1C respectively show top, bottom, and X-ray views of an example electronic device.

[0015] Figure 1D shows a cross-sectional view taken along lines 1D-1D in Figure 1A

[0016] Figure 1E shows a partial enlarged view of region 1E' in Figure 1A

[0017] Figure 1F shows a partial enlarged view of region 1F' in Figure 1A

[0018] Figure 2A ,​​​ Figure 2B Figure 2C Figure 2D Figure 2E FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device.

[0019] Figure 3A Figure 3B Figure 3C Figure 3D FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device.

[0020] Figure 3E FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device. Figure 3A

[0021] Figure 3F Figure 3A FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device.

[0022] Figure 4 FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device.

[0023] Figure 5A FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device. Figure 3A

[0024] FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device. Figure 5B Figure 4

[0025] Figure 5C Figure 5A Figure 5B FIG. 1A shows a cross-sectional view of an example method for manufacturing an example electronic device.

[0026] The following discussion provides various examples of semiconductor devices and methods of manufacturing semiconductor devices. Such examples are non-limiting and the scope of the appended claims should not be limited to the specific examples disclosed. In the following discussion, the terms “example” and “exemplary” mean “serving as an example, instance, or illustration,” and not “preferred” or “advantageous over other examples.” That is, these terms are non-limiting, and the examples should not be read as necessarily being preferred or advantageous over other examples.

[0027] The various figures illustrate general architectural features, and the description and details of well-known features and techniques can be omitted to avoid unnecessarily obscuring the examples discussed in this disclosure. The elements in the figures are not necessarily drawn to scale. For example, some of the elements in each figure can be exaggerated in relation to other elements for the purpose of presentation. Identical reference numerals in different figures represent identical elements.

[0028] ​​​​​​​​​​​​The term "or" means any one or more of the items in the list of which it is a part. For example, "x or y" means any element that is either the element x or the element y. As another example, "x, y, or z" means any element that is either the element x or the element y or the element z.

[0029] The terms "comprises", "comprising", "includes", and "including" are "open" terms, and specifically do not exclude one or more additional elements.

[0030] The terms "first", "second", and the like, herein can be used to describe various elements, and these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure.

[0031] Unless otherwise specified, the term "coupled" can be used to describe two elements that are in direct contact with each other or two elements that are indirectly connected through one or more intervening elements. For example, if element A is coupled to element B, then element A can be directly in contact with element B, or indirectly connected to element B through an intervening element C. Similarly, the term "above" or "on" can be used to describe two elements that are in direct contact with each other or two elements that are indirectly connected through one or more intervening elements. Unless specified, the term "coupled" can refer to mechanical coupling or electrical coupling. DETAILED DESCRIPTION

[0032] Other examples are included in the disclosure. Such examples can be found in the figures, the claims, or the description of the disclosure.

[0033] Figure 1A and Figure 1B A top view and a bottom view of an example electronic device 100 are shown, respectively. Figure 1C An X-ray view of the electronic device 100 is shown. Figure 1D A cross-sectional view taken along line 1D-1D in Figure 1A A cross-sectional view taken along line 1D-1D in Figure 1A , Figure 1B , Figure 1C and Figure 1D In the examples shown in FIGS. 1A-1D, the electronic device 100 can include a substrate 110, an electronic assembly 120, an interconnect 130, and an encapsulant 140. The electronic device 100 is an example of a power module. In some examples, the electronic device 100 can include or be referred to as a top-exposed pad modular power electronic package.

[0034] The substrate 110 can include or be referred to as a leadframe or a molded substrate. According to various examples, the substrate 110 includes at least one drain contact 112, at least one source contact 114, and at least one gate contact 116. In some examples, a sensor contact 116' (shown in Figure 1C FIG. 1) can be used as an optional sensor or sensing terminal that can be coupled to a small number of transistor cells within the electronic component 120 to sense current levels in the electronic device 100 for control or monitoring purposes. The drain contact 112 is an example of a first contact or first current-carrying contact and can include or be referred to as a drain pad, a drain pad, a die pad, a die pad, a heat spreader, a heat dissipater, a conductive pad, a pad, or a current-carrying contact. The source contact 114 is an example of a second contact or second current-carrying contact and can include or be referred to as a source pad, a source pad, or a current-carrying contact. The gate contact 116 is an example of a third contact or control contact and includes or is referred to as a gate pad or a gate pad. The sensor contact 116' is an example of a fourth contact and can include or be referred to as a sensing contact.

[0035] In some examples, the substrate 110 can include a first external drain terminal 112a and a second external drain terminal 112b. The first external drain terminal 112a and the second external drain terminal 112b extend outwardly from a side 1120a of the drain contact 112 and protrude from or are exposed outside of the encapsulant 140. The first external drain terminal 112a can also include or be referred to as a first lead leg that extends in a first direction 112a'. The second external drain terminal 112b can also include or be referred to as a second lead leg that extends in a second direction 112b' that is different from the first direction 112a'. In some examples, the second direction 112b' is opposite or 180 degrees relative to the first direction 112a'. The first external drain terminal 112a is an example of a first external terminal or first contact first external terminal, and the second drain terminal 112b is an example of a second external terminal or first contact second external terminal.

[0036] In some examples, the substrate 110 can include one or more external source terminals 114a coupled to and extending outward from the source contacts 114 and protruding from or exposed from the encapsulant 140. The substrate 110 can include one or more external gate terminals 116a coupled to and extending outward from the gate contacts 116 and protruding from or exposed from the encapsulant 140. In some examples, the substrate 110 can include one or more external sensor terminals 116a' coupled to and extending outward from the sensor contacts 116' and protruding from or exposed from the encapsulant 140. The external source terminals 114a are examples of the second contact first external terminal or the third external terminal, the external gate terminals 116a are examples of the third contact first external terminal or the fourth external terminal, and the external sensor terminals 116a' are examples of the fourth contact first external terminal or the fifth external terminal.

[0037] In some examples, the thickness of the drain contacts 112 can be greater than the thickness of the source contacts 114 and / or the gate contacts 116. The thicker drain contacts 112 tend to allow for an increase in current tolerance of the electronic components 120 electrically, thermally, or mechanically coupled to the drain contacts 112, or can improve thermal dissipation performance of the electronic device 100. In some examples, the drain contacts 112 can be provided in a generally square or rectangular plate shape. In some examples, the thickness of the drain contacts 112 can be in a range of approximately 1000 micrometers (pm) to approximately 1400 pm; however, this range is merely an example, and other thicknesses can be used. The drain contacts 112 can serve as a path for drain current to flow from the drain regions of the electronic components 120.

[0038] In the present example and with reference to Figure 1C, the first external drain terminal 112a includes a first protrusion 1121a extending outward from a first side 1120a of the drain contact 112 and a first extension 1122a extending outward from a side of the first protrusion 1121a in a first direction 112a’. The first protrusion 1121a can also include or be referred to as a first arm or first tab, and the first extension 1122a can also include or be referred to as a first lead finger. In some examples, the first protrusion 1121a has a width that is wider than a width of the first extension 1122a. The second external drain terminal 112b includes a second protrusion 1121b extending outward from the first side 1120a of the drain contact 112 and a second extension 1122b extending outward from a side of the second protrusion 1121b in a second direction 112b’. The second protrusion 1121b can also include or be referred to as a second arm or second tab, and the second extension 1122b can also include or be referred to as a second lead finger. In some examples, the second protrusion 1121b has a width that is wider than a width of the second extension 1122b. In some examples, the first protrusion 1121a can have a width that is the same as or similar to a width of the second protrusion 1121b, and the first extension 1122a can have a width that is the same as or similar to a width of the second extension 1122b.

[0039] In accordance with the present description and with further reference to Figure 1C , the first protrusion 1121a and the second protrusion 1121b are separated from each other by a gap 112e. The gap 112e can also include or be referred to as a slot, a recess, or a cutout. In accordance with the present description, the gap 112e is defined by an inside of the first protrusion 1121a, an inside of the second protrusion 1121b, and a portion of the first side 1120a of the drain contact 112.

[0040] In some examples, the first extension 1112a of the first external drain terminal 112a and the second extension 1112b of the second external drain terminal 112b are formed or bent such that they extend in a direction toward a bottom side of the encapsulant 140 (e.g., toward a side of the encapsulant 140 that faces away from the drain contact 112). In some examples, the first external drain terminal 112a and the second external drain terminal 112b can have a thickness in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The first external drain terminal 112a and the second external drain terminal 112b can be coupled to a next-level assembly, such as an external circuit board, thereby providing a drain current flow path between the electronic device 100 and the next-level assembly.

[0041] In some examples, the source contact 114 can be spaced apart from the drain contact 112. For example, the source contact 114 can be spaced apart from a side 1120b (see Figure 1CThe source contacts 114 can be spaced apart from the first side 1120a of the drain contacts 112. In some examples, the source contacts 114 can have a generally rectangular plate shape. In some examples, the thickness of the source contacts 114 can be less than the thickness of the drain contacts 112. The thickness of the source contacts 114 can be in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The source contacts 114 can serve as a path for source current to flow into and out of the source region of the electronic component 120.

[0042] In some examples, the external source terminal 114a can include a plurality of external source terminals 114a coupled to and extending outward from the source contacts 114. In some examples, each external source terminal 114a can extend in a generally vertical direction to a side of the drain contacts 112 and can also extend in a generally vertical direction to a side of the encapsulant 140. In some examples, the external source terminal 114a is formed or bent in a direction toward the bottom side of the encapsulant 140. The bent structure can assist in coupling the external source terminal 114a to a next level assembly, such as an external circuit board. In some examples, the thickness of the external source terminal 114a can be in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The external source terminal 114a can be coupled to a next level assembly to provide a source current flow path between the electronic device 100 and the next level assembly. In other examples, the external source terminal 114a can be disposed adjacent to other sides of the drain contacts 112.

[0043] In some examples, the gate contacts 116 can be spaced apart from a second side 1120b of the drain contacts 112, the second side being opposite the first side 1120a of the drain contacts 112 and opposite the first and second external drain terminals 112a, 112b. In some examples, at least one gate contact 116 can be provided. In some examples, the thickness of the gate contacts 116 can be less than the thickness of the drain contacts 112. In some examples, the gate contacts 116 can be provided in a generally square plate shape. In some examples, the thickness of the gate contacts 116 can be in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The gate contacts 116 can serve as a passageway through which a control signal, such as a gate voltage, can be applied to the gate region of the electronic component 120.

[0044] In some examples, the external gate terminal 116a is coupled to and can extend outwardly from the gate contact 116. In some examples, the external gate terminal 116a can extend in a direction generally perpendicular to the second side 1120b of the drain contact 112, and can also extend in a direction generally perpendicular to a side of the encapsulant 140. In some examples, the external gate terminal 116a can be coupled to a next-level assembly, such as an external circuit board, by being formed or bent in a direction toward a bottom side of the encapsulant 140. In some examples, the external gate terminal 116a can have a thickness in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The external gate terminal 116a can be mounted on the next-level assembly to provide a gate voltage application path between the electronic device 100 and the next-level assembly.

[0045] In some examples, the external sensor terminal 116a' is coupled to and can extend outwardly from the sensor contact 116'. In some examples, the external sensor terminal 116a' can extend in a direction generally perpendicular to the second side 1120b of the drain contact 112, and can also extend in a direction generally perpendicular to a side of the encapsulant 140. In some examples, the external sensor terminal 116a' can be coupled to a next-level assembly, such as an external circuit board, by being formed or bent in a direction toward a bottom side of the encapsulant 140. In some examples, the external sensor terminal 116a' can have a thickness in a range of approximately 200 pm to approximately 800 pm; however, this range is merely an example, and other ranges can be used. The external sensor terminal 116a' can be mounted on the next-level assembly to provide a sensing path between the electronic device 100 and the next-level assembly.

[0046] The electronic component 120 can include a semiconductor material and can be coupled to the drain contact 112. In some examples, the electronic component 120 can include a drain region disposed on an underside of the semiconductor material and electrically coupled to the drain contact 112, a source region disposed on an upper side of the semiconductor material and electrically coupled to the source contact 114, a gate region disposed on the upper side and electrically coupled to the gate contact 116, and a sense region that can be disposed on the upper side and electrically coupled to the sensor contact 116'. In some examples, the source region, the gate region, and the sense region can each include a source bond pad 121s, a gate bond pad 121g, and a sensor bond pad 121se, respectively. In some examples, the drain region of the electronic component 120 can be electrically coupled to the drain contact 112 using a conductive adhesive. In some examples, the source bond pad 121s of the electronic component 120 can be electrically coupled to the source contact 114 by an interconnect 130. In some examples, the gate bond pad 121g of the electronic component 120 can be electrically coupled to the gate contact 116 using another interconnect 130. In some examples, the sensor bond pad 121se of the electronic component 120 can be electrically coupled to the sensor contact 116' using another interconnect 130. In some examples, the interconnects 130 can include wire bonds (e.g., gold, copper, or aluminum wire), clips (e.g., copper, copper alloy, or aluminum), ribbon bonds (e.g., copper or copper alloy), other interconnect structures known to those of ordinary skill in the art, or combinations thereof. It should be understood that different types of interconnects can be used for different electrical interconnections. Such differences can include structure or type, size, or material. In some examples, the diameter or thickness of the interconnects 130 can range from approximately 50 pm to approximately 500 pm, and can depend on power requirements.

[0047] The electronic component 120 can include or be referred to as a die, a chip, a package, or a passive element. In some examples, the electronic component 120 can include a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), a thyristor, or a bipolar junction transistor (BJT). The thickness of the electronic component 120 can range from approximately 50 pm to approximately 400 pm. In some examples, the electronic component 120 acts as a switching device that can conduct current or block current depending on a gate voltage applied to the gate region, and can be used with other electronic devices to provide, for example, a power conversion structure.

[0048] In some examples and with reference to Figure 1A , Figure 1C and Figure 1DThe encapsulant 140 can encapsulate, cover, or surround the substrate 110, the electronic assembly 120, and the interconnect 130. The encapsulant 140 can surround at least portions of the drain contact 112, the source contact 114, the sensor contact 116', and the gate contact 116. In some examples, the external drain terminals 112a, 112b, the external source terminal 114a, the external sensor terminal 116a', and the external gate terminal 116a can each protrude from or extend outwardly from and be exposed from the encapsulant 140. In some examples, some regions of the drain contact 112 can be exposed from the encapsulant 140. In some examples and as shown in Figure 1A and Figure 1D opposite side of the drain contact 112 that is coupled to the electronic assembly 120 can be exposed from the encapsulant 140. In some examples, the exposed surface of the drain contact 112 can be substantially coplanar with a side or major surface of the encapsulant 140. The encapsulant 140 can comprise or be referred to as an epoxy mold compound, a resin, a filler-reinforced polymer, a B-stage compression film, or a gel. The thickness of the encapsulant 140 can range from approximately 2.5 millimeters (mm) to approximately 4.5 mm. The encapsulant 140 can isolate, insulate, and protect the substrate 110, the electronic assembly 120, and the interconnect 130 from external harsh environments. The electronic device 100 is an example of a drain-up electronic device or a source-down electronic device, where the drain contact 112 is disposed proximate to a top side of the encapsulant 140 and the source contact 114, the sensor contact 116', and the gate contact 116 are disposed proximate to a bottom side of the encapsulant 140.

[0049] Figure 1E is an enlarged partial view showing a region IE' of the Figure 1A of a portion of the drain contact 112. Reference is made to Figure 1C and Figure 1EIn some examples, recesses 112d can be provided in some areas of the outer drain terminal 112a and 112b. In some examples, the recesses 112d extend partially into the drain terminal 112a and 112b. In some examples, the recesses 112d can be provided in opposite sides of the first protrusion 1121a and the second protrusion 1121b. In some examples, the recesses 112d can be provided in areas of the first protrusion 1121a and the second protrusion 1121b proximate to the first side 1120a of the drain contact 112. The recesses 112d can each include or be referred to as a recess, an uneven, a thinned portion, or an embossed area. In some examples, the recesses 112d can be provided by chemical etching, mechanical compression stamping, mechanical compression stamping, or a combination thereof. In some examples, the recesses 112d can be covered by the encapsulant 140. In some examples, the recesses 112d can have a depth in a range of approximately 150 pm to approximately 400 pm. In some examples, the recesses 112d can have a depth in a range of approximately 15% to approximately 75% of a thickness of the first outer drain terminal 112a and the second outer drain terminal 112b. In some examples, the recesses 112d can have a depth in a range of approximately 25% to approximately 50% of a thickness of the first outer drain terminal 112a and the second outer drain terminal 112b. In some examples, the recesses 112d can have a depth in a range of approximately 50% to approximately 75% of a thickness of the first outer drain terminal 112a and the second outer drain terminal 112b. The recesses 112d can improve the bonding force between the outer drain terminal 112a and 112b and the encapsulant 140, and can also reduce delamination between the outer drain terminal 112a and 112b and the encapsulant 140.

[0050] In some examples, a chamfer 112c can be provided in a portion of the drain contact 112. In some examples, the chamfer 112c can be provided by removing a portion of the drain contact 112 proximate to the first side 1120a where the outer drain terminal 112a and 112b start and proximate to the gap 112e. In some examples, the chamfer 112c can be provided by removing some portions of the areas of the first protrusion 1121a closest to the outer drain terminal 112a and the second protrusion 1121b closest to the outer drain terminal 112b. In some examples, the encapsulant 140 can be coupled to the chamfer 112c. In some examples, the encapsulant 140 fills a portion of the gap 112e and contacts a lateral edge of the chamfer 112c. The chamfer 112c is angled with respect to the first side 1120a of the drain contact 112, and the angle is less than 90 degrees. In some examples, the angle is between 30 degrees and 60 degrees. In some examples, the angle is 45 degrees. In some examples, the chamfer 112c can include or be referred to as an angled side, a recess, or a cutout. In some examples, the chamfer 112c can be provided by chemical etching or mechanical compression stamping.

[0051] In some instances, the depth of the chamfer 112c, recessed inward from the first side 1120a of the drain contact 112, can range from approximately 200 μm to approximately 800 μm. The chamfer 112c improves the flatness of the drain contact 112 or the external drain terminals 112a and 112b. In some instances, stress can be applied to the external drain terminals 112a and 112b or the drain contact 112 when the external drain terminals 112a and 112b are separated from the frame body (e.g., by monomerization or sawing). Therefore, the external drain terminals 112a and 112b or the drain contact 112 can deform or twist. Experiments have shown that the chamfer 112c reduces this effect. More specifically, the chamfer 112c helps maintain the flatness of the external drain terminals 112a and 112b and the drain contact 112. This improves manufacturing yield, device quality, and reliability.

[0052] Figure 1F Exhibition along Figure 1A The image shows a magnified view of a portion of area 1F', revealing a part of the source contact 114. Figure 1F In the examples shown, grooves 114d may be provided in some regions of the source contact 114. In some examples, grooves 114d may be provided near the end of the external source terminal 114a adjacent to the source contact 114. In some examples, grooves 114d may be provided in the portion of the source contact 114 located between adjacent external source terminals 114a. In some examples, grooves 114d extend partially into the source contact 114. In some examples, grooves 114d may be covered by encapsulant 140. Grooves 114d may each include or be referred to as uneven portions, recesses, thinned portions, or embossed areas. In some examples, grooves 114d may be provided by chemical etching, mechanical compression stamping, mechanical compression imprinting, or a combination thereof. The depth of grooves 114d may range from approximately 150 μm to approximately 400 μm. In some instances, the depth of the groove 114d may be between approximately 15% and approximately 75% of the thickness of the source contact 114. In some instances, the depth of the groove 114d may be between approximately 25% and approximately 50% of the thickness of the source contact 114. In some instances, the depth of the groove 114d may be between approximately 50% and approximately 75% of the thickness of the source contact 114. The groove 114d can improve the bonding strength between the source contact 114 and the encapsulation 140, and can also reduce delamination between the source contact 114 and the encapsulation 140.

[0053] Figure 2A , Figure 2B , Figure 2C , Figure 2D and Figure 2EA cross-sectional view of an example method for manufacturing an example electronic device, such as electronic device 100, is shown. Here, similar features previously described with respect to electronic device 100 can not be repeated, and reference to some elements can not be shown in Figures 2A to 2E but are shown in Figures 1A to 1F .

[0054] Figure 2A A cross-sectional view of electronic device 100 at an early stage of manufacturing is shown. In the example shown in Figure 2A , a substrate 110 can be provided. Substrate 110 can include a drain contact 112, a source contact 114, a sensor contact 116', and a gate contact 116. In some examples, substrate 110 can include an external drain terminal 112a and an external drain terminal 112b extending from drain contact 112, at least one external source terminal 114a extending from source contact 114, at least an external sensor terminal 116a' extending from sensor contact 116', and at least one external gate terminal 116a extending from gate contact 116. In some examples, drain contact 112 can be connected to a frame body using a connecting rod to provide support for drain contact 112 during manufacturing.

[0055] In some examples, external drain terminals 112a and 112b can be connected to and supported by a frame body through a barrier rod disposed across external drain terminals 112a and 112b. In some examples, external source terminal 114a, external sensor terminal 116a', or external gate terminal 116a can be connected to and supported by a frame body through another barrier rod disposed across external source terminal 114a, external sensor terminal 116a', or external gate terminal 116a. In some examples, external drain terminals 112a and 112b, external source terminal 114a, external sensor terminal 116a', or external gate terminal 116a can be supported by connecting their distal ends to a frame body. In some examples, the thickness of drain contact 112, the thickness of source contact 114, the thickness of sensor contact 116', and the thickness of gate contact 116 can be different. In some examples, the thickness of drain contact 112 can be relatively greater than the thickness of source contact 114, sensor contact 116', and gate contact 116. In the present example, drain contact 112 is located in or resides on a first plane, and gate contact 116, sensor contact 116', and source contact 114 are located in or reside on a second plane that is different from or offset relative to the first plane. In some examples, in the cross-sectional view, the first plane is elevated higher than the second plane.

[0056] Figure 2B A cross-sectional view of electronic device 100 at a later stage of manufacturing is shown. In the example shown in Figure 2BIn the example shown in FIG. 1, an electronic component 120 can be provided. In some examples, the drain region of the electronic component 120 can be electrically connected to the drain contact 112 using an attachment structure, such as a conductive adhesive 102. In some examples, one or more conductive materials, such as Sn, Ag, Pb, Cu, Sn-Pb, Sn37-Pb, Sn95-Pb, Sn-Pb-Ag, Sn-Cu, Sn-Ag, Sn-Au, Sn-Bi, or Sn-Ag-Cu can be provided on the drain contact 112 or the drain region of the electronic component 120. Subsequently, the electronic component 120 can be placed on the drain contact 112 using the conductive adhesive 102, and subsequently a reflow process or a thermal compression process can be performed such that the electronic component 120 is coupled to the drain contact 112.

[0057] Figure 2C A cross-sectional view of the electronic device 100 at a later stage of manufacturing is shown. In the example shown in FIG. 2, the electronic component 120 can be provided. In some examples, the drain region of the electronic component 120 can be electrically connected to the drain contact 112 using an attachment structure, such as a conductive adhesive 102. In some examples, one or more conductive materials, such as Sn, Ag, Pb, Cu, Sn-Pb, Sn37-Pb, Sn95-Pb, Sn-Pb-Ag, Sn-Cu, Sn-Ag, Sn-Au, Sn-Bi, or Sn-Ag-Cu can be provided on the drain contact 112 or the drain region of the electronic component 120. Subsequently, the electronic component 120 can be placed on the drain contact 112 using the conductive adhesive 102, and subsequently a reflow process or a thermal compression process can be performed such that the electronic component 120 is coupled to the drain contact 112. Figure 2C In the example shown in FIG. 3, an interconnect 130 can be provided. The electronic component 120 and the substrate 110 can be electrically coupled by the interconnect 130, such as a conductive wire, ribbon bond, or conductive clip. In some examples, the interconnect 130 can electrically couple the gate bond pad 121g of the electronic component 120 to the gate contact 116 by a wire bonding process. In some examples, one end of the interconnect 130 can be ball bonded to the gate bond pad 121g and the other end of the interconnect 130 can be stitch bonded to the gate contact 116. In some examples, another interconnect 130 can electrically connect the source bond pad 121s of the electronic component 120 to the source contact 114 by a wire bonding process (see FIG. 4). Figure 1C In some examples, one end of the interconnect 130 can be ball bonded to the source bond pad 121s and the other end of the interconnect 130 can be stitch bonded to the source contact 114. In some examples, another interconnect 130 can electrically connect the sensor bond pad 121se of the electronic component 120 to the sensor contact 116' by a wire bonding process (see FIG. 5). Figure 1C In some examples, one end of the interconnect 130 can be ball bonded to the sensor bond pad 121se and the other end of the interconnect 130 can be stitch bonded to the sensor contact 116. In this way, the drain region of the electronic component 120 can be electrically coupled to the drain contact 112 and the external drain terminal 112a and the external drain terminal 112b, the source region of the electronic component 120 can be electrically coupled to the source contact 114 and the external source terminal 114a, the sensor region of the electronic component 120 can be electrically coupled to the sensor contact 116' and the external sensor terminal 116a', and the gate region of the electronic component 120 can be electrically coupled to the gate contact 116 and the external gate terminal 116a.

[0058] Figure 2DA cross-sectional view of the electronic device 100 at a later manufacturing stage is shown. In the example shown in Figure 2D In some examples, an encapsulant 140 can be provided. In some examples, the encapsulant 140 can be provided by compression molding, transfer molding, liquid encapsulation molding, vacuum lamination, paste printing, or film assisted molding. Compression molding can be a process in which a fluid resin is supplied to a mold in advance and then cured by placing the substrate 110 described above into the mold, and transfer molding can be a process in which a resin is supplied to a peripheral region of the substrate 110 by using a gate (supply port). After this process, the hardened encapsulant 140 can be ejected from the mold. The substrate 110, the electronic assembly 120, and the interconnect 130 can be encapsulated, covered, or surrounded by the encapsulant 140. In the substrate 110, the external drain terminals 112a and 112b, the external source terminal 114a, the external sensor terminal 116a', and the external gate terminal 116a can protrude outwardly from the encapsulant 140 and be exposed from the encapsulant. In some examples, one side of the drain contact 112 can be exposed from one side of the encapsulant 140.

[0059] In some examples, after the encapsulation process, a plating process can be performed. Solder, nickel, palladium, or gold can be plated on the exposed surfaces of the external drain terminals 112a and 112b, the external source terminal 114a, the external sensor terminal 116a', or the external gate terminal 116a. Accordingly, when the electronic device 100 is mounted on an external circuit board, corrosion of the terminals can be prevented, and solder mixing properties can also be improved. In some examples, when a lead frame substrate having a pre-plated frame (PPF) technology is used, the plating process described above can be omitted.

[0060] Figure 2E A cross-sectional view of the electronic device 100 at a later manufacturing stage is shown. In the example shown in Figure 2E In some examples, a trimming and forming process can be performed. In some examples, the substrate 110 can be placed in a trimming and forming device to trim and form various features of the substrate 110. In some examples, the end portions of the external drain terminals 112a and 112b connected to the frame body, the end portion of the external source terminal 114a, the end portion of the external sensor terminal 116a', or the end portion of the external gate terminal 116a can be cut, and the barrier bars connecting the terminals to each other can be cut to be removed. In some examples, the external drain terminals 112a and 112b, the external source terminal 114a, the external sensor terminal 116a', or the external gate terminal 116a can be bent into a predetermined shape in order to facilitate mounting to an external circuit board.

[0061] In some examples, a stamping process can be performed after the trimming and forming processes. In some examples, at least one connecting rod connecting the electronic device 100 with the frame body can be removed after placing the substrate 110 within a stamping device, such that the electronic device 100 is separated from the frame body. Although a manufacturing process of one electronic device 100 has been described, it should be understood that multiple electronic devices 100 can be manufactured from one frame body.

[0062] Figure 3A , Figure 3B , Figure 3C and Figure 3D respectively show an X-ray view, a top view, a bottom view, and a side view of an example electronic device 200, and Figure 3E show a cross-sectional view taken along line 3E-3E in Figure 3A . In the examples shown in Figure 3A , Figure 3B , Figure 3C , Figure 3D and Figure 3E , the electronic device 200 can include a substrate 210, electronic components 220a and 220b, an interconnect 230, and an encapsulant 240. The electronic device 200 can be similar to the electronic device 100 shown in Figure 1A , Figure 1B and Figure 1C , and thus the following description will primarily focus on the differences between the electronic device 200 and the electronic device 100. The electronic device 200 is an example of a power module configured to contain two or more power semiconductor devices within a small form factor and use top-exposed contacts (e.g., top-exposed drain contacts) to facilitate heat dissipation. In some examples, the electronic device 200 can include or be referred to as a top-exposed pad modular power electronic package. The electronic device 200 is an example of a modular electronic package, and a pair of electronic devices 200 can include or be referred to as a first modular electronic package and a second modular electronic package.

[0063] Substrate 210 can include a drain contact 212, a source contact 214, and a gate contact 216. In some examples, substrate 210 can also include at least one sensor contact 216'. In other examples, sensor contact 216' can be excluded. In some examples, sensor contact 216' can be shaped similarly to gate contact 216. In some examples, substrate 210 can include at least one external drain terminal 212a that is coupled to and extends from drain contact 212, and that protrudes from and is exposed from encapsulant 240. In some examples, substrate 210 can include at least one external source terminal 214a that is coupled to and extends from source contact 214, and that protrudes from and is exposed from encapsulant 240. In some examples, substrate 210 can include at least one external gate terminal 216a that is coupled to and extends from gate contact 216, and that protrudes from and is exposed from encapsulant 240. In some examples, substrate 210 can include at least one external sensor terminal 216a' that is coupled to and extends from sensor contact 216', and that protrudes from and is exposed from encapsulant 240. In some examples, external sensor terminal 216a' can be shaped similarly to external gate terminal 216a.

[0064] Drain contact 212 is an example of a first contact or first current-carrying contact, and can include or be referred to as a drain pad, a drain land, a die pad, a die land, a heat slug, a heat spreader, a conductive pad, a pad, or a current-carrying contact. Source contact 214 is an example of a second contact or second current-carrying contact, and can include or be referred to as a source pad, a source land, or a current-carrying contact. Gate contact 216 is an example of a third contact or control contact, and can include or be referred to as a gate pad or a gate land. Sensor contact 216' is an example of a fourth contact, and can include or be referred to as a sense contact.

[0065] In some examples, drain contact 212 can be provided in the shape of a generally square plate, and external drain terminal 212a can extend in a horizontal direction from a side of the square plate, and can be bent in a downward direction from drain contact 212 (see, e.g., FIGS. 1A and 1B). In other examples, electronic device 200 can include a drain contact 112 having external drain terminals 112a and 112b separated by a gap 112e, and one or more of a chamfer 112c, a recess 112d, or a recess 114d, as previously described with respect to Figure 3D and Figure 3E In some examples, drain contact 212 can be provided in the shape of a generally square plate, and external drain terminal 212a can extend in a horizontal direction from a side of the square plate, and can be bent in a downward direction from drain contact 212 (see, e.g., FIGS. 1A and 1B). In other examples, electronic device 200 can include a drain contact 112 having external drain terminals 112a and 112b separated by a gap 112e, and one or more of a chamfer 112c, a recess 112d, or a recess 114d, as previously described with respect to Figures 1A to 1F

[0066] ​In some examples, the source contact 214 can be spaced apart from one side of the drain contact 212. In some examples, an external source terminal 214a can extend laterally outward from the source contact 214 and bend in a downward direction from the source contact 214 (see, e.g., FIG. 2B). In some examples, the gate contact 216 can be laterally spaced apart on an opposite side of the source contact 214. In some examples, the gate contact 216 can each include an external gate terminal 216a that extends laterally outward from the gate contact 216 and bends in a downward direction from the gate contact 216. Figure 3D and Figure 3E ). In some examples, the gate contact 216 can be laterally spaced apart on an opposite side of the source contact 214. In some examples, the gate contact 216 can each include an external gate terminal 216a that extends laterally outward from the gate contact 216 and bends in a downward direction from the gate contact 216.

[0067] In some examples, the sensor contact 216' can be laterally spaced apart on an opposite side of the source contact 214. In some examples, the sensor contact 216' can have an external sensor terminal 216a' that extends laterally outward from the sensor contact 216' and bends in a downward direction from the sensor contact 216'. In some examples, the sensor contact 216' can be located between the source contact 214 and the gate contact 216. In some examples, the sensor contact 216' can be located outside of the gate contact 216. In some examples, an external drain terminal 212a can be placed on one side of the drain contact 212, and an external source terminal 214a, an external gate terminal 216a, or an external sensor terminal 116a' can be placed in an opposite location or side from the external drain terminal 212a. It should be understood that the external source terminal 214a, the external gate terminal 216a, or the external sensor terminal 116a' can be placed in other locations.

[0068] In some examples, a drain region of the first electronic component 220a and a drain region of the second electronic component 220b can be coupled to the drain contact 212. The first electronic component 220a and the second electronic component 220b can be spaced apart from each other. The first electronic component 220a and the second electronic component 220b can each respectively include a source region coupled to the source contact 214, a gate region coupled to the gate contact 216, and a sensor region coupled to the sensor contact 216'. In some examples, the source region can include a source bonding pad 221s, the gate region can include a gate bonding pad 221g, and the sensor region can include a sensor bonding pad 221se. In some examples, the source bonding pad 221s can be larger than the gate bonding pad 221g or the sensor bonding pad 221se, as more or greater current flows through the source bonding pad 221s than the gate bonding pad 221g or the sensor bonding pad 221se.

[0069] The interconnects 230 can electrically connect the source bonding pads 221s disposed in the first and second electronic components 220a, 220b to the source contacts 214. The interconnects 230 can electrically connect the gate bonding pads 221g disposed in the first and second electronic components 220a, 220b to the gate contacts 216. The interconnects 230 can electrically connect the sensor bonding pads 221se disposed in the first and second electronic components 220a, 220b to the sensor contacts 216'. In some examples, the diameter or thickness of the source interconnects 230 can be greater than the diameter or thickness of the gate interconnects 230 or the sensor interconnects 230 due to higher current.

[0070] The encapsulant 240 can surround, cover, or encapsulate the substrate 210, the first and second electronic components 220a, 220b, and the interconnects 230. The encapsulant 240 can surround the drain contacts 212, the source contacts 214, the gate contacts 216, and the sensor contacts 216' of the substrate 210. In some examples, the external drain terminal 212a, the external source terminal 214a, the external gate terminal 216a, and the external sensor terminal 216a' can each protrude from or be exposed from the encapsulant 240.

[0071] Figure 3F Equivalent switch circuit diagrams for the electronic device 200 are shown for Figure 3A , Figure 3B and Figure 3C In some examples, the switch circuit can include first and second (N-channel) MOSFETs 2200a and 2200b connected in parallel with each other. In some examples, the switch circuit can include P-channel MOSFETs or IGBTs connected in parallel with each other.

[0072] In some examples, the drain regions of the first electronic component 220a and the drain regions of the second electronic component 220b are coupled to a common drain contact 212 in the electronic device 200, and in the equivalent switch circuit, the drain regions of the first MOSFET 2200a (denoted as drain contact 212) and the drain regions of the second MOSFET 2200b (denoted as drain contact 212) are coupled through an external drain terminal 212a to provide a common drain node 2120. Figure 3F In some examples, the source regions of the first electronic component 220a and the source regions of the second electronic component 220b are coupled to a common source contact 214 in the electronic device 200, and in the equivalent switch circuit, the source regions of the first MOSFET 2200a (denoted as source contact 214) and the source regions of the second MOSFET 2200b (denoted as source contact 214) are coupled through an external source terminal 214a to provide a common source node 2140.

[0073] In some examples, the gate region of the first electronic component 220a and the gate region of the second electronic component 220b are each electrically connected to a separate gate contact 216, and in Figure 3F In the equivalent switching circuit of FIG. 20, the gate region of the first MOSFET 2200a (denoted as gate contact 216) and the gate region of the second MOSFET 2200b (denoted as gate contact 216) are separated from each other and can be individually biased or commonly biased at the board level using, for example, a control integrated circuit (IC). In some examples, the sensor region of the first electronic component 220a and the sensor region of the second electronic component 220b are each electrically connected to a separate sensor contact 216', and in Figure 3F In the equivalent switching circuit of FIG. 20, the sensor region of the first MOSFET 2200a (denoted as sensor contact 216') and the sensor region of the second MOSFET 2200b (denoted as sensor contact 216') are separated from each other and can be individually monitored or commonly monitored at the board level using, for example, separate control ICs.

[0074] In some examples, the first MOSFET 2200a and the second MOSFET 2200b can each include a body diode (or parasitic diode) 712 having a reverse blocking direction from drain to source. In some examples, Figure 3F The switching circuit shown in FIG. 20 can be used as a high-side switch or a low-side switch for a single-phase half-bridge converter.

[0075] Figure 4 An X-ray view of an example electronic device 200A is shown. In Figure 4 In the example shown in FIG. 21, the electronic device 200A can be similar to the electronic device 200 described above. However, the external source terminal 214a' can be provided as a single piece or a single tab rather than being divided into multiple separate external leads. In some examples, one external source terminal 214a' can extend and bend in a downward direction from the single source contact 214. In some examples, the width of the external source terminal 214a' can be less than the source contact 214. In some examples, the placement of the source contact 214 can be opposite the drain contact 212. In some examples, the width of the source contact 214 can be similar to the drain contact 212. Because the width of the external source terminal 214a' is similar to the width of the external drain terminal 212a, the allowable current can be increased. The electronic device 200A is an example of a power module configured to include two or more power semiconductor devices within a small form factor and using top-exposed contacts, such as top-exposed drain contacts, to facilitate heat dissipation. The electronic device 200A is an example of a modular electronic package, and a pair of electronic devices 200A can comprise or be referred to as a first modular electronic package and a second modular electronic package.

[0076] In some examples, the electronic device 200 can include or be referred to as a top-exposed pad modular power electronic package. In other examples, the electronic device 200A can include a drain contact 112 having external drain terminals 112a and 112b separated by a gap 112e and one or more of a chamfer 112c, a recess 112d, or a recess 114d, as previously described with respect to Figures 1A to 1F .

[0077] Figure 5A A view of an example electronic module 200M1 of a pair of example electronic devices 200 coupled to a top side of a board 260B1 from Figure 3A is shown and described. More specifically, the electronic components 220a and 220b are interposed between the top side of the board 260B1 and the drain contact 112. The board 260B1 can also include or be referred to as a build substrate, a carrier substrate, a module board, or a build board. Figure 5B A view of an example electronic module 200M2 of a pair of example electronic devices 200A coupled to a top side of a board 260B2 from Figure 4 is shown and described. Figure 5A and Figure 5B are views of an X-ray view looking up through a bottom side of the board 260B1 and the board 260B2 on which the electronic devices 200 and 200A are mounted, respectively. More specifically, the electronic components 220a and 220b are interposed between the top side of the board 260B1 and 260B2 and the drain contact 112. The board 260B1 and 260B2 can also include or be referred to as a build substrate, a carrier substrate, a module board, or a build board.

[0078] In the example shown in Figure 5A , the electronic module 200M1 can include a pair of electronic devices 200 coupled to the board 260B1. In the example shown in Figure 5B , the electronic module 200M2 can include a pair of electronic devices 200A coupled to the board 260B2. In some examples, the board 260B1 and 260B2 can each include or be referred to as a printed circuit board (PCB), a printed wiring board (PWB), a ceramic board, a next-level assembly, or a silicon board. The board 260B1 and 260B2 can each include a dielectric 261 and a conductive pattern, which can include or be referred to as drain patterns 262a and 262b, source patterns 264a and 264b, and gate patterns 266, respectively. In some examples, the board 260B1 and 260B2 can include a sensor pattern 266a, which can also include or be referred to as a sense pattern. The drain patterns 262a and 262b are examples of a first conductive pattern, the source patterns 264a and 264b are examples of a second conductive pattern, the gate patterns 266 are examples of a third conductive pattern, and the sensor pattern 266a is an example of a fourth conductive pattern. The gate patterns 266 and the sensor pattern 266a can be configured to be electrically coupled to one or more control ICs located on the board 260B1 and 260B2 or located external thereto.

[0079] In the example shown in Figure 5AIn the illustrated example, board 260B1 may include a drain pattern 262a and a source pattern 264a disposed adjacent to and spaced laterally from a first side 260B1a of board 260B1. Board 260B1 may include a source pattern 264b and a drain pattern 262b disposed adjacent to and spaced laterally from a second side 260B1b. In this example, the second side 260B1b is opposite to the first side 260B1a. In some examples, the source pattern 264b and the drain pattern 262b adjacent to the second side 260B1b may be connected to each other via a connection pattern 268. In some examples, a load output terminal may be connected to the connection pattern 268. Board 260B1 may include a gate pattern 266 and a sensor pattern 266a disposed adjacent to the first side 260B1a and the second side 260B1b, respectively.

[0080] A pair of electronic devices 200 may be mounted on board 260B1. In some embodiments, the pair of electronic devices 200 may be mounted on board 260B1 with their drain contacts facing upward, such that the drain contacts 212 of the electronic devices 200 face away from and away from the mounting surface on board 260B1, or are opposite to the mounting surface. In this way, the exposed drain contacts 212 (see, for example) Figure 3B The components are positioned to enhance heat transfer or dissipation in the electronic module 200M1. In this orientation, the source regions of electronic components 220a and 220b face or are close to the mounting surface of board 260B1.

[0081] In some instances, on one side of board 260B1 (e.g.) Figure 5A On the left side of the plate 260B1, the external drain terminal 212a of the first electronic device in the pair of electronic devices 200 can be coupled to a drain pattern 262a (denoted as Drain@HS or high-side drain node) near the first side 260B1a of the plate 260B1, and the external source terminal 214a can be coupled to a source pattern 264b (denoted as Source@HS or high-side source node) near the second side 260B1b. The external gate terminal 216a of the first electronic device in the pair of electronic devices 200 can be coupled to a gate pattern 266 (denoted as Gate@HS or high-side gate node) near the second side 260B1b, and the external sensor terminal 216a' can be coupled to a sensor pattern 266a (denoted as Sensor@HS or high-side sensor node) near the second side 260B1b. In some instances, on the other side of the plate 260B1 (e.g., ...), Figure 5AOn the right side of the pair of electronic devices 200, the external drain terminal 212a of the second electronic device can be coupled to the drain pattern 262b (denoted as Drain@LS or low-side drain node) proximate to the second side 260B1b of the board 260B1, and the external source terminal 214a can be coupled to the source pattern 264a (denoted as Source@LS or low-side source node) proximate to the first side 260B1a. The external gate terminal 216a of the second electronic device can be coupled to the gate pattern 266 (denoted as Gate@LS or low-side gate node) proximate to the first side 260B1a, and the external sensor terminal 216a’ can be coupled to the sensor pattern 266a (denoted as Sensor@LS or low-side sensor node) proximate to the first side 260B1a.

[0082] In this example, the electronic devices 200 are oriented in different directions on the board 261B1. In some examples, the electronic devices 200 are oriented or rotated 180 degrees relative to each other. In some examples, the electronic module 200M1 is configured as a half-bridge single phase for a DC / DC converter. In accordance with the present description, because the electronic devices 200 each include two or more power electronic components in a single package, a modular power package configuration is provided within a small footprint or form factor. Additionally, the top-exposed drain contacts 212 (see, e.g., FIG. 2) provide improved heat dissipation. Figure 3B Figure 5A The left-side electronic device of the electronic devices 200 in FIG. 2 is an example of a first modular electronic package including high-side switching devices, and Figure 5A The right-side electronic device of the electronic devices 200 in FIG. 2 is an example of a second modular electronic package including low-side switching devices.

[0083] It should be understood that the electronic devices 200 in the electronic module 200M1 can use any of the features described in FIG. 1 for the drain terminals and source terminals, including the drain contacts 112 having the protrusions 1121a and 1121b and the extensions 1122a and 1122b, the gap 112e, the chamfer 112c, the recess 112d, or the recess 114d. Figures 1A to 1F

[0084] In FIG. 2, the electronic devices 200 are oriented in different directions on the board 261B1. In some examples, the electronic devices 200 are oriented or rotated 180 degrees relative to each other. In some examples, the electronic module 200M1 is configured as a half-bridge single phase for a DC / DC converter. In accordance with the present description, because the electronic devices 200 each include two or more power electronic components in a single package, a modular power package configuration is provided within a small footprint or form factor. Additionally, the top-exposed drain contacts 212 (see, e.g., FIG. 2) provide improved heat dissipation. Figure 5B ​​In the example shown, board 260B2 may include a drain pattern 262a disposed near the third side 260B2c of board 260B2 and a source pattern 264a disposed near the fourth side 260B2d and spaced apart from each other in the lateral direction. Board 260B2 may include a drain pattern 262b and a source pattern 264b disposed in the central portion of board 260B2. In some examples, the source pattern 264b and the drain pattern 262b may be coupled using a connection pattern 268. In some examples, a load output terminal may be connected to the connection pattern 268. Board 260B2 may include a gate pattern 266 and a sensor pattern 266a spaced apart from each other near the first side 260B2a and the second side 260B2b of board 260B2, respectively.

[0085] A pair of electronic devices 200A may be mounted on board 260B2. In some embodiments, the pair of electronic devices 200A may be mounted on board 260B2 with their drain contacts facing upward, such that the drain contacts 212 of the electronic devices 200A face away from and away from the mounting surface on board 260B2, or are opposite to the mounting surface. In this way, the exposed drain contacts 212 (see, for example) Figure 3B The components are positioned to enhance heat transfer or dissipation in the electronic module 200M2. In this orientation, the source regions of electronic components 220a and 220b face or are close to the mounting surface of board 260B2.

[0086] In some instances, on one side of board 260B2 (e.g.) Figure 5B On the left side of the pair of electronic devices 200A, the external drain terminal 212a of the first electronic device can be coupled to the drain pattern 262a (denoted as Drain@HS or high-side drain node) near the third side 260B2c of the plate 260B2, and the external source terminal 214a of the second electronic device in the pair of electronic devices 200A can be coupled to the source pattern 264a (denoted as Source@LS or low-side source node) near the fourth side 260B2d. The external gate terminal 216a of the first electronic device in the pair of electronic devices 200A can be coupled to the gate pattern 266 (denoted as Gate@HS or high-side gate node) near the second side 260B2b, and the external sensor terminal 216a' can be coupled to the sensor pattern 266a (denoted as Sensor@HS or high-side sensor node) near the second side 260B2b and the sensor pattern 266a near the first side 260B2a. In some instances, on the other side of board 260B2 (e.g., Figure 5BOn the right side, the external gate terminal 216a of the second electronic device in a pair of electronic devices 200A can be coupled to a gate pattern 266 (represented as Gate@LS or low-side gate node) near the second side 260B2b and a gate pattern 266 near the first side 260B2a, and the external sensor terminal 216a' can be coupled to a sensor pattern 266a (represented as Sensor@LS or low-side sensor node) near the second side 260B2b and a sensor pattern 266a near the first side 260B2a.

[0087] In this example, electronic device 200A is oriented in a different orientation on board 261B2. In some examples, electronic device 200A is oriented or mounted on board 260B2 in a mirror image arrangement. In some examples, electronic module 200M2 is configured as a half-bridge single-phase DC / DC converter. According to this specification, because electronic device 200A contains two or more power electronic components in a single package, a modular power package configuration is provided within a small footprint or form factor. Additionally, the top-exposed drain contacts 212 (see example...) Figure 3B It provides improved heat dissipation. Figure 5B The left-side electronic device in the electronic device 200A is an example of a first modular electronic package including a high-side switching device, and Figure 5B The right-side electronic device in the electronic device 200A is an example of a second modular electronic package including a low-side switching device.

[0088] It should be understood that the electronic device 200A in the electronic module 200M2 can be used Figures 1A to 1F The features for the drain and source terminals described herein include a drain contact 112 having protrusions 1121a and 1121b and extensions 1122a and 1122b, a gap 112e, a chamfer 112c, a groove 112d or a groove 114d.

[0089] Figure 5C Showcase for Figure 5A and Figure 5B Equivalent circuit diagrams of the switching circuits for electronic modules 200M1 and 200M2 are provided. In this example, the switching circuit may include first, second, third, and fourth (N-channel) MOSFETs 2200a, 2200b, 2200c, and 2200d connected in parallel and series with each other, respectively. In other examples, the switching circuit may include P-channel MOSFETs or IGBTs connected in parallel and series with each other. In some examples, the first MOSFET 2200a and the second MOSFET 2200b may be co-packaged in... Figure 5A In one of the electronic devices 200 (e.g., the left-side electronic device) or Figure 5Bone of the electronic devices 200 (e.g., the left-side electronic device) and the third MOSFET 2200c and the fourth MOSFET 2200d can be co-packaged in Figure 5A one of the electronic devices 200 (e.g., the right-side electronic device) or Figure 5B the other one of the electronic devices 200A (e.g., the right-side electronic device).

[0090] In some examples, the first MOSFET 2200a and the second MOSFET 2200b can be arranged on an upper side of the switch circuit and can comprise or be referred to as high-side switches, and the third MOSFET 2200c and the fourth MOSFET 2200d can be arranged on a lower side of the switch circuit and can comprise or be referred to as low-side switches.

[0091] In some examples, Figure 5A the left-side electronic device of the electronic devices 200 and Figure 5B the drain region of the first electronic component 220a and the drain region of the second electronic component 220b in the left-side electronic device of the electronic devices 200A are coupled to a drain contact 212. In Figure 5C the switch circuit of FIG. 2, the drain region of the first MOSFET 2200a (denoted as the drain contact 212) and the drain region of the second MOSFET 2200b (denoted as the drain contact 212) can be coupled through an external drain terminal 212a and a drain pattern 262a (see Figure 5A and Figure 5B ) to provide a drain node 2120H, which can also comprise or be referred to as a high-side drain node or Drain@HS node. In this example, the drain regions of the first MOSFET 2200a and the second MOSFET 2200b can be coupled through Figure 5C the drain contact 212 in the switch circuit of FIG. 2 to an input (INPUT) node.

[0092] In some examples, Figure 5A the left-side electronic device of the electronic devices 200 and Figure 5B the source region of the first electronic component 220a and the source region of the second electronic component 220b in the left-side electronic device of the electronic devices 200A are coupled to a common source contact 214 (see, e.g., Figure 4 ) In Figure 5C the equivalent switch circuit of FIG. 2, the source region of the first MOSFET 2200a (denoted as the source contact 214) and the source region of the second MOSFET 2200b (denoted as the source contact 214) are coupled through an external source terminal 214a and a source pattern 264b (see Figure 5A and Figure 5B) coupled to provide a source node 2140H, which can also include or be referred to as a high-side source node or Source@HS node.

[0093] In some examples, Figure 5A the drain region of the first electronic component 220a and the drain region of the second electronic component 220b in the right-side electronic device in the electronic device 200 in Figure 5B the drain region of the first electronic component 220a and the drain region of the second electronic component 220b in the right-side electronic device in the electronic device 200A are coupled to a drain contact 212. In Figure 5C In the switch circuit of FIG. 20A, the drain region of the third MOSFET 2200c (denoted as drain contact 212) and the drain region of the fourth MOSFET 2200d (denoted as drain contact 212) can be coupled through an external drain terminal 212a’ and a drain pattern 262b (see Figure 5A and Figure 5B ) coupled to provide a drain node 2120L, which can also include or be referred to as a low-side drain node or Drain@LS node. In this example, the drain node 2120L is coupled to the source node 2140H to set a load output (LOAD OUT) node in Figure 5C the switch circuit of FIG. 20A.

[0094] In some examples, Figure 5A the source region of the first electronic component 220a and the source region of the second electronic component 220b in the right-side electronic device in the electronic device 200 in Figure 5B the source region of the first electronic component 220a and the source region of the second electronic component 220b in the right-side electronic device in the electronic device 200A are coupled to a common source contact 214. In Figure 5C In the switch circuit of FIG. 20A, the source region in the third MOSFET 2200c (denoted as source contact 214) and the source region in the fourth MOSFET 2200d (denoted as source contact 214) can be coupled through an external source terminal 214a’ and a source pattern 264a (see Figure 5A and Figure 5B ) coupled to provide a source node 2140L, which can also include or be referred to as a low-side source node or Source@LS node. In this example, the source node 2140L can be coupled to a ground (GND) node in Figure 5C the switch circuit of FIG. 20A.

[0095] In some examples, Figure 5A the gate region of the first electronic component 220a and the gate region of the second electronic component 220b in the left-side electronic device in the electronic device 200 in Figure 5Bthe gate region of the first electronic component 220a and the gate region of the second electronic component 220b in the left side electronic device in the electronic device 200 in Figure 4 ) are each coupled to a separate gate contact 216 and a separate external gate terminal 216a (see Figure 5C ) in the switching circuit of Figure 5A and Figure 5B ) to provide a first high-side gate node or Gate1@HS node, and the gate contact 216 of the second MOSFET 2200b can be coupled to another external gate terminal 216a and another gate pattern 266 (see Figure 5A and Figure 5B ) to provide a second high-side gate node or Gate2@HS node.

[0096] In some examples, Figure 5A the gate region of the first electronic component 220a and the gate region of the second electronic component 220b in the right side electronic device in the electronic device 200 in Figure 5B ) and a separate external gate terminal 216a in the right side electronic device in the electronic device 200A in Figure 4 ) are each coupled to a separate gate contact 216 and a separate external gate terminal 216a (see Figure 5C ) in the switching circuit of Figure 5A and Figure 5B ) to provide a first low-side gate node or Gate1@LS node, and the gate contact 216 of the fourth MOSFET 2200d can be coupled to another external gate terminal 216a and another gate pattern 266 (see Figure 5A and Figure 5B ) to provide a second low-side gate node or Gate2@LS node.

[0097] In some examples, Figure 5AThe left electronic device in the electronic device 200 and Figure 5B The sensor region of the first electronic component 220a and the sensor region of the second electronic component 220b in the left electronic device of the electronic device 200A are each coupled to a separate sensor contact 216' (see [link]). Figure 4 ) and a separate external sensor terminal 216a'. In Figure 5C In the switching circuit, the sensor area of ​​the first MOSFET 2200a (denoted as sensor contact 216') and the sensor area of ​​the second MOSFET 2200b (denoted as sensor contact 216') are separated from each other and can be monitored individually or jointly at the board level using, for example, a control IC. In this example, the sensor contact 216' of the first MOSFET 2200a can be coupled to an external sensor terminal 216a' and a sensor pattern 266a (see...). Figure 5A and Figure 5B This provides a first high-side sensor node or Sensor1@HS node, and the sensor contact 216' of the second MOSFET 2200b can be coupled to another external sensor terminal 216a' and another sensor pattern 266a (see...). Figure 5A and Figure 5B This can provide a second high-side sensor node or a Sensor2@HS node.

[0098] In some instances, Figure 5A The right-side electronic device in the electronic device 200 and Figure 5B The sensor region of the first electronic component 220a and the sensor region of the second electronic component 220b in the right-hand electronic device of the electronic device 200A are each coupled to a separate sensor contact 216' (see [link]). Figure 4 ) and a separate external sensor terminal 216a'. In Figure 5C In the switching circuit, the sensor area of ​​the third MOSFET 2200c (denoted as sensor contact 216') and the sensor area of ​​the fourth MOSFET 2200d (denoted as sensor contact 216') are separated from each other and can be monitored individually or jointly at the board level, for example, using a control IC. In this example, the sensor contact 216' of the third MOSFET 2200c can be accessed via an external sensor terminal 216a' and sensor pattern 266a (see...). Figure 5A and Figure 5B Coupled to provide a first low-side sensor node or Sensor1@LS node, and the sensor contact 216' of the fourth MOSFET 2200d can be connected via another external sensor terminal 216a' and sensor pattern 266a (see Figure 5A and Figure 5B) coupled to provide a second low-side sensor node or Sensor2@LS node.

[0099] In some examples, Figure 5C The switching circuits shown in FIGS. 2M1 and 2M2 can be used as components of a DC-DC converter. In some examples, the switching circuits described above can be employed in a single-phase half-bridge converter that converts a high-voltage DC to an AC voltage through high-side and low-side switching elements, converts the AC voltage at a transformer ratio of a transformer, and then converts it back to a DC voltage through a rectifier.

[0100] In summary, structures and related methods involving power modules configured to include two or more power semiconductor devices within a small form factor assembly and use top-exposed contacts to facilitate heat dissipation have been described. In some examples, the top-exposed contacts can be used as first current carrying terminals of the power module, such as drain contacts, and can be provided with first and second external terminals extending from a side of the contact for connection to a next level assembly. In some examples, the first external terminal can extend in a first direction and the second external terminal can extend in a second direction different from the first direction. In some examples, the first and second external terminals can be laterally separated by a gap or void configured to reduce a height deviation between the first and second external terminals.

[0101] In some examples, a chamfer cut can be provided in the contact between the first and second external terminals to reduce distortion and stress when the power module is manufactured. In some examples, a groove can be provided in the edges of the first and second external terminals proximate to the contact to improve adhesion between the contact and the package encapsulant. In some examples, the power module includes a second current carrying terminal, such as a source terminal, that can be provided with a partial stamping configured to improve adhesion between the source terminal and the package encapsulant.

[0102] The modular electronic packages described herein can be used in various power conversion implementations, including DC / DC half-bridge for single-phase applications based on their design flexibility.

[0103] The present disclosure includes reference to certain examples; however, one skilled in the art will understand that various changes and substitutions can be made and equivalents employed without departing from the scope of the present disclosure. In addition, modifications can be made to the disclosed examples without departing from the scope of the present disclosure. Accordingly, it is intended that the present disclosure not be limited to the disclosed examples, but that the present disclosure will include all examples falling within the scope of the following claims.

Claims

1. An electronic device comprising: a substrate comprising: a first contact comprising a first contact top side, a first contact bottom side opposite the first contact top side, a first contact first lateral side, and a first contact second lateral side opposite the first contact first lateral side; a first contact first external terminal coupled to and extending outwardly from the first contact first lateral side; a first contact second external terminal coupled to and extending outwardly from the first contact first lateral side, wherein the first contact second external terminal and the first contact first external terminal are separated by a gap; a second contact proximate to and laterally separated from the first contact second lateral side; a second contact first external terminal coupled to and extending outwardly from the second contact; a second contact second external terminal coupled to and extending outwardly from the second contact; a third contact proximate to and laterally separated from the first contact second lateral side; and a third contact first external terminal coupled to and extending outwardly from the third contact; a first electronic component comprising a first electronic component top side and a first electronic component bottom side opposite the first electronic component top side, wherein the first electronic component bottom side is coupled to the first contact top side, a first portion of the first electronic component top side is electrically coupled to the second contact, and a second portion of the first electronic component is electrically coupled to the third contact; and an encapsulant covering the substrate and the first electronic component; wherein: the encapsulant comprises an encapsulant top side, an encapsulant bottom side opposite the encapsulant top side, and an encapsulant lateral side; the first contact first external terminal, the first contact second external terminal, the second contact first external terminal, the second contact second external terminal, and the third contact first external terminal are exposed from the encapsulant; the first contact bottom side is exposed from the encapsulant top side; and the encapsulant covers a portion of the gap proximate to the first contact first lateral side.

2. The electronic device of claim 1, wherein: the first contact first external terminal comprises: a first protrusion extending outwardly from the first contact first lateral side; and a first extension extending outwardly from the first protrusion in a first direction; and the first contact second external terminal comprises: a second protrusion extending outwardly from the first contact first lateral side and separated from the first protrusion by the gap; and a second extension extending outwardly from the second protrusion in a second direction different from the first direction.

3. The electronic device of claim 2, wherein: the first extension extends from the first protrusion in a direction toward the encapsulant bottom side; and the second extension extends from the second protrusion in the direction toward the encapsulant bottom side.

4. The electronic device of claim 2, further comprising: a chamfer in the first lateral side of the first contact, a lateral side of the first protrusion, and a lateral side of the second protrusion, wherein the encapsulant covers the chamfer.

5. The electronic device of claim 2, further comprising: a groove partially extending into a surface of the first protrusion and the second protrusion, wherein the encapsulant covers the groove.

6. The electronic device of claim 2, wherein the first direction is opposite the second direction.

7. The electronic device of claim 1, wherein: the first contact resides on a first plane; the second contact and the third contact reside on a second plane; and in a cross-sectional view, the first plane is elevated higher than the second plane.

8. The electronic device of claim 1, further comprising: a groove partially extending into the second contact between the second contact first external terminal and the second contact second external terminal, wherein the encapsulant covers the groove.

9. The electronic device of claim 1, wherein: the second contact first external terminal and the second contact second external terminal extend from the second contact in a direction toward a bottom side of the encapsulant; and the third contact first external terminal extends from the third contact in the direction toward the bottom side of the encapsulant.

10. The electronic device of claim 1, further comprising: a fourth contact; and a fourth contact first external terminal coupled to the fourth contact and extending outward from the fourth contact; wherein: a third portion of the first electronic component top side is electrically coupled to the fourth contact; and the fourth contact first external terminal is exposed from the encapsulant.

11. An electronic device, comprising: a first modular electronic package, comprising: a first substrate, comprising: a first current-carrying contact, comprising a first side, a second side opposite the first side, a first lateral side, and a second lateral side opposite the first lateral side; a first external terminal coupled to and extending from the first current-carrying contact; a second current-carrying contact; a second external terminal coupled to and extending from the second current-carrying contact; a first control contact; a first control contact external terminal coupled to and extending from the first control contact; a second control contact; and a second control contact external terminal coupled to and extending from the second control contact; a first electronic component, comprising a first electronic component top side, a first electronic component bottom side opposite the first electronic component top side, wherein the first electronic component bottom side is coupled to the first side of the first current-carrying contact, a first portion of the first electronic component top side is coupled to the second current-carrying contact, and a second portion of the first electronic component top side is coupled to the first control contact; a second electronic component, comprising a second electronic component top side, a second electronic component bottom side opposite the second electronic component top side, wherein the second electronic component bottom side is coupled to the second side of the first current-carrying contact, a first portion of the second electronic component top side is coupled to the second current-carrying contact, and a second portion of the second electronic component top side is coupled to the second control contact; and a third electronic component, comprising a third electronic component top side, a third electronic component bottom side opposite the third electronic component top side, wherein the third electronic component bottom side is coupled to the second side of the first current-carrying contact, a first portion of the third electronic component top side is coupled to the second current-carrying contact, and a second portion of the third electronic component top side is coupled to the second control contact. a second electronic component including a second electronic component top side and a second electronic component bottom side opposite the second electronic component top side, wherein the second electronic component bottom side is coupled to the first side of the first current carrying contact, a first portion of the second electronic component top side is coupled to the second current carrying contact, and a second portion of the second electronic component top side is coupled to the second control contact; and a first encapsulant covering the first substrate, the first electronic component, and the second electronic component; wherein: the first encapsulant includes a first encapsulant top side, a first encapsulant bottom side opposite the first encapsulant top side, a first encapsulant first lateral side, and a first encapsulant second lateral side opposite the first encapsulant first lateral side; the second side of the first current carrying contact is exposed from the first encapsulant top side; the first external terminal is exposed from the first encapsulant at the first encapsulant first lateral side; and the second external terminal, the first control contact external terminal, and the second control contact external terminal are exposed from the first encapsulant at the first encapsulant second lateral side.

12. The electronic device of claim 11, wherein: the first external terminal extends from the first current carrying contact toward the first encapsulant bottom side; and the second external terminal extends from the second current carrying contact in a direction toward the first encapsulant bottom side.

13. The electronic device of claim 11, wherein the first external terminal includes: a first protrusion extending outward from the first current carrying contact; a first extension extending outward from the first protrusion in a first direction; a second protrusion extending outward from the first current carrying contact separate from the first protrusion by a gap; and a second extension extending outward from the second protrusion in a second direction different from the first direction; wherein: the first extension extends from the first protrusion in a direction toward the first encapsulant bottom side; and the second extension extends from the second protrusion in the direction toward the first encapsulant bottom side.

14. The electronic device of claim 13, further comprising: a chamfer in the first lateral side, a lateral side of the first protrusion, and a lateral side of the second protrusion; and a recess extending partially into a surface of the first protrusion and the second protrusion; wherein: the first encapsulant covers the chamfer and the recess.

15. The electronic device of claim 11, further comprising: a recess extending partially into the second current carrying contact; wherein: the second external terminal is one of a plurality of second external terminals coupled to and extending from the second current carrying contact; the recess is interposed between adjacent second external terminals of the plurality of second external terminals; and the first encapsulant covers the recess.

16. The electronic device of claim 11, further comprising: a mounting board including a top side; and a second modular electronic package including: ​ ​ a second substrate comprising: a first current carrying contact comprising a first side, a second side opposite the first side, a first lateral side, and a second lateral side opposite the first lateral side; a first external terminal coupled to and extending from the first current carrying contact; a second current carrying contact; a second external terminal coupled to and extending from the second current carrying contact; a first control contact; a first control contact external terminal coupled to and extending from the first control contact; a second control contact; and a second control contact external terminal coupled to and extending from the second control contact; a third electronic component comprising a third electronic component top side, a third electronic component bottom side opposite the third electronic component top side, wherein the third electronic component bottom side is coupled to the first side of the first current carrying contact of the second substrate, a first portion of the third electronic component top side is coupled to the second current carrying contact of the second substrate, and a second portion of the third electronic component top side is coupled to the first control contact of the second substrate; a fourth electronic component comprising a fourth electronic component top side and a fourth electronic component bottom side opposite the fourth electronic component top side, wherein the fourth electronic component bottom side is coupled to the first side of the first current carrying contact of the second substrate, a first portion of the fourth electronic component top side is coupled to the second current carrying contact of the second substrate, and a second portion of the second electronic component top side is coupled to the second control contact of the second substrate; and a second encapsulant covering the second substrate, the third electronic component, and the fourth electronic component; wherein: the second encapsulant comprises a second encapsulant top side, a second encapsulant bottom side opposite the second encapsulant top side, a second encapsulant first lateral side, and a second encapsulant second lateral side opposite the second encapsulant first lateral side; the first current carrying contact second side of the second substrate is exposed from the second encapsulant top side; the first external terminal of the second substrate is exposed from the second encapsulant at the second encapsulant first lateral side; the second external terminal, the first control contact external terminal, and the second control contact external terminal of the second substrate are exposed from the second encapsulant at the second encapsulant second lateral side; the first modular electronic package is coupled to the top side of the assembly board such that the first current carrying contact of the first substrate is distanced from and facing away from the top side of the assembly board; the second modular electronic package is coupled to the top side of the assembly board such that the first current carrying contact of the second substrate is distanced from and facing away from the top side of the assembly board; and the second current carrying contact of the first modular electronic package is coupled to the first current carrying contact of the second modular electronic package.

17. The electronic device of claim 16, wherein: the first modular electronic package comprises a high side switching device; the second modular electronic package comprises a low side switching device; and the first control contact of the first modular electronic package is coupled to the second control contact of the second modular electronic package. The first and second modular electronic packages are oriented in different directions on the assembly board.

18. The electronic device of claim 17, wherein: The first and second modular electronic packages are oriented such that the second external terminal of the first modular electronic package and the second external terminal of the second modular electronic package are oriented in opposite directions.

19. A method of manufacturing an electronic device, comprising: providing a substrate, the substrate comprising: a first contact comprising a first contact top side, a first contact bottom side opposite the first contact top side, a first contact first lateral side, and a first contact second lateral side opposite the first contact first lateral side; a first contact first external terminal coupled to and extending outwardly from the first contact first lateral side; a first contact second external terminal coupled to and extending outwardly from the first contact first lateral side, wherein the first contact second external terminal and the first contact first external terminal are separated by a gap; a second contact proximate to and laterally separated from the first contact second lateral side; a second contact first external terminal coupled to and extending outwardly from the second contact; a second contact second external terminal coupled to and extending outwardly from the second contact; a third contact proximate to and laterally separated from the first contact second lateral side; and a third contact first external terminal coupled to and extending outwardly from the third contact; providing a first electronic component, the first electronic component comprising a first electronic component top side and a first electronic component bottom side opposite the first electronic component top side, wherein the first electronic component bottom side is coupled to the first contact top side, a first portion of the first electronic component top side is electrically coupled to the second contact, and a second portion of the first electronic component is electrically coupled to the third contact; and providing an encapsulant, the encapsulant covering the substrate and the first electronic component; wherein: the encapsulant comprises an encapsulant top side, an encapsulant bottom side opposite the encapsulant top side, and an encapsulant lateral side; the first contact first external terminal, the first contact second external terminal, the second contact first external terminal, the second contact second external terminal, and the third contact first external terminal are exposed from the encapsulant; the first contact bottom side is exposed from the encapsulant top side; and the encapsulant covers a portion of the gap proximate to the first contact first lateral side.

20. The method of claim 19, wherein: providing the substrate comprises: providing a chamfer in the substrate; providing the first contact first external terminal, the first contact first external terminal comprising: a first protrusion extending outwardly from the first contact first lateral side; and a first extension extending outwardly from the first protrusion in a first direction; and The first contact second external terminal is provided to include: a second protrusion portion outwardly extending from the first contact first lateral side and separated from the first protrusion portion by the gap; and a second extension portion outwardly extending from the second protrusion portion in a second direction different from the first direction; the first extension portion extends from the first protrusion portion in a direction toward the package bottom side; the second extension portion extends from the second protrusion portion in the direction toward the package bottom side; the chamfer is disposed in the first contact first lateral side, a lateral side of the first protrusion portion, and a lateral side of the second protrusion portion; and providing the package includes providing the package to cover the chamfer.

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