Temperature measurement method, system, medium and equipment integrating terminal and electric energy meter

Abstract

The invention discloses a temperature measurement method, system, medium and equipment integrating a terminal and an electric energy meter, and the method comprises the steps: obtaining a basic temperature value through measuring the voltage difference of a PN junction of a voltage difference triode based on a dynamic matching method; a pre-stored segmentation error compensation model is called to correct the basic temperature value, and a final temperature value is output; through collaborative design of a dynamic matching method and a segmented error compensation model, the problem of full-temperature-range measurement error caused by dynamic change of saturation current IS in operation is solved. Compared with a mode of correcting the saturation current IS initial value only through factory single-point fine adjustment in the prior art, the embodiment of the invention can effectively cope with the dynamic fluctuation of the saturation current IS parameter in the operation process, thereby realizing more stable temperature measurement.

Description

Technical Field

[0001] This invention relates to the field of temperature measurement technology for power grid equipment, and in particular to a temperature measurement method, system, medium, and device that integrates a terminal and an electricity meter. Background Technology

[0002] As the core interface for power transmission, the terminals of integrated terminals and electricity meters are prone to insulation aging and component burn-out due to abnormal heating. Therefore, high-precision temperature measurement is crucial for the safe operation of the equipment. Currently, infrared temperature measurement is costly and limited by installation space, while thermocouples require additional wiring and have low integration. In contrast, transistor PN junction temperature measurement, based on built-in components, requires no additional hardware and has become the mainstream solution due to its low cost and high integration. Its technical principle is based on the Ebers-Moll equation. By applying different collector currents IC1 and IC2, ΔVBE (the voltage difference between the transistor's PN junction) is measured, and the linear relationship between ΔVBE and absolute temperature T is used to infer the temperature.

[0003] A constant current with a fixed ratio (e.g., 10:1) is applied to the temperature-sensing transistor. VBE1 and VBE2 are acquired by a high-precision ADC, and ΔVBE is calculated. During the production stage, two points, 25℃ (normal temperature) and 85℃ (medium temperature), are selected to establish a linear calibration equation T=a×ΔVBE+b. A Zener diode is used to achieve static voltage regulation of the power supply. Before leaving the factory, the initial deviation of the saturation current IS is corrected by single-point fine-tuning. When the equipment is running, the calibration equation is entered to calculate the temperature and the data is uploaded. This solution is widely used in low- and mid-range integrated terminals and energy meters due to its simple structure and low cost.

[0004] The dynamic interference of saturation current IS in the existing technology has not been eliminated: the initial value of saturation current IS is corrected by a single-point fine adjustment at the factory, which cannot cope with the dynamic changes of saturation current IS during operation, and introduces a measurement error of ±3℃~±5℃ in the whole temperature range. Summary of the Invention

[0005] To overcome the shortcomings of existing technologies, which fail to eliminate the dynamic interference of saturation current IS, and which only correct the initial value of saturation current IS through factory single-point fine-tuning, thus failing to cope with the dynamic changes of saturation current IS during operation and introducing a measurement error of ±3℃~±5℃ across the entire temperature range.

[0006] In a first aspect, the present invention provides a temperature measurement method integrating a terminal and an electricity meter, comprising: Based on the dynamic matching method, the base temperature value is obtained by measuring the voltage difference between the PN junctions of the voltage difference transistor and calculating it. The pre-stored segmented error compensation model is invoked to correct the base temperature value, and the final temperature value is output.

[0007] Optionally, the dynamic matching method calculates the PN junction voltage difference of the transistor by applying at least two different currents to the temperature-sensing transistor and measuring the corresponding base-emitter voltage.

[0008] Optionally, the segmented error compensation model is generated by calibrating at multiple calibration points, including the first temperature zone, the second temperature zone, and the third temperature zone, and establishing independent compensation functions for different temperature zones.

[0009] Optionally, the calibration points include at least four temperature points: -40℃, 25℃, 85℃, and 150℃.

[0010] Optionally, the compensation function is a polynomial, and the order of the polynomial used in the third temperature zone is not lower than that of the first and second temperature zones.

[0011] Optionally, the rate of change of the voltage difference or the rate of change of the power supply voltage is continuously monitored, and the final temperature value is dynamically compensated in real time based on the obtained rate of change of the transistor PN junction voltage difference or the rate of change of the power supply voltage.

[0012] Optionally, when the base temperature value enters the high temperature range, an enhanced measurement mode is adopted by increasing the current ratio or extending the measurement stabilization time.

[0013] Secondly, the present invention provides a temperature measurement system integrating a terminal and an electricity meter, comprising: The dynamic matching module is used to obtain the base temperature value by measuring the voltage difference between the PN junctions of the voltage difference transistor based on the dynamic matching method. The dynamic compensation module is used to call the pre-stored segmented error compensation model to correct the base temperature value and output the final temperature value.

[0014] Thirdly, the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the method described in the first aspect.

[0015] Fourthly, the present invention provides an electronic device, including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; When a processor executes a program stored in memory, it implements the steps of the method described in the first aspect.

[0016] The beneficial effects of this invention are: by combining the dynamic matching method with the piecewise error compensation model, the problem of full-temperature-range measurement error caused by the dynamic change of the saturation current IS during operation is solved. Compared with the prior art, which only corrects the initial value of the saturation current IS through single-point fine-tuning at the factory, this embodiment can effectively cope with the dynamic fluctuation of the saturation current IS parameter during operation, thereby achieving more stable temperature measurement. Attached Figure Description

[0017] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0018] Figure 1 These are flowcharts from some embodiments; Figure 2 These are system block diagrams from some embodiments. Detailed Implementation

[0019] The following will clearly and completely describe the concept, specific structure, and technical effects of the present invention in conjunction with embodiments and accompanying drawings, so as to fully understand the purpose, features, and effects of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are all within the scope of protection of the present invention. Furthermore, all connections / linkages involved in the patent do not simply refer to direct contact between components, but rather to the ability to form a better connection structure by adding or reducing connecting accessories according to specific implementation conditions. The various technical features in this invention can be combined interactively without contradicting each other.

[0020] In traditional terminal temperature testing, only two calibration points are typically used, which do not cover the temperature range above 100℃. At high temperatures, the nonlinear characteristics of the PN junction are aggravated, and the accuracy drops to ±8.2℃ at 150℃, which does not meet the safety protection requirements. The linear calibration equation is only effective in the range of 25℃ to 85℃. In the low-temperature range (-40℃), the accuracy drops to ±6℃ due to increased leakage current, and the accuracy in the high-temperature range is seriously substandard. The long-term reliability is low: there is no dynamic compensation mechanism for saturation current IS. After 3 to 5 years of operation, the temperature measurement accuracy decreases by more than 50% due to device aging, resulting in high maintenance costs.

[0021] This invention is applied to a system with a three-terminal connection between a main station, a converged terminal, and an electricity meter, wherein: A converged terminal is typically a concentrator used to manage all electricity meters within a certain area; An electricity meter is a terminal device installed at the user's end; it is the unit that directly performs metering and control.

[0022] This invention provides a temperature measurement method integrating a terminal and an electricity meter, comprising: S1. Based on the dynamic matching method, the base temperature value is obtained by measuring the voltage difference between the PN junctions of the voltage difference transistor and calculating it. S2. Call the pre-stored segmented error compensation model to correct the base temperature value and output the final temperature value.

[0023] The dynamic matching method can be understood as a measurement approach that reduces the impact of parameter deviations by adjusting input conditions. Specifically, it can be achieved by applying current signals of different frequencies to the temperature-sensing transistor and acquiring the corresponding base-emitter voltage changes. Furthermore, the PN junction voltage difference of the transistor can be obtained by changing the current direction or using pulsed current, primarily to reduce the influence of the initial deviation of the saturation current IS on the measurement results, thereby improving the reliability of the base temperature value. The piecewise error compensation model refers to an error correction mechanism established based on the characteristics of different temperature ranges. In practical applications, this model can be implemented by constructing linear or nonlinear functions in the low-temperature, room-temperature, and high-temperature ranges respectively. For example, a lookup table method combined with interpolation algorithms can be used, or a compensation function can be generated by real-time fitting of multiple curves. Its main purpose is to specifically correct the nonlinear errors in different temperature zones, thereby improving the temperature measurement accuracy across the entire temperature range.

[0024] The innovation of this application lies in solving the problem of full-temperature-range measurement error caused by the dynamic change of the saturation current IS during operation through the coordinated design of dynamic matching method and piecewise error compensation model. Compared with the existing technology that only corrects the initial value of the saturation current IS by single-point fine adjustment at the factory, this embodiment can effectively cope with the dynamic fluctuation of the saturation current IS parameter during operation, thereby achieving more stable temperature measurement.

[0025] The working principle of this application embodiment is as follows: An improved temperature measurement method for a fusion terminal and an energy meter effectively solves the problem of measurement error across the entire temperature range caused by dynamic changes in the saturation current IS during operation through the collaborative design of a dynamic matching method and a piecewise error compensation model. Specifically, the dynamic matching method is used to apply currents of different magnitudes and measure the corresponding base-emitter voltage difference to obtain the base temperature value. This method reduces the direct impact of the initial deviation of the saturation current IS on the measurement result by dynamically adjusting the current ratio or measurement conditions, providing more reliable basic data for subsequent temperature calculations. Furthermore, a pre-stored piecewise error compensation model is invoked to correct the base temperature value. This model is generated based on calibration at multiple calibration points and can establish independent compensation functions according to the characteristics of different temperature zones, specifically correcting the nonlinear error caused by the dynamic changes in the saturation current IS. Thus, the dynamic matching method ensures the accuracy of the base temperature value, while the piecewise error compensation model effectively addresses the fluctuations in the saturation current IS parameter across the entire temperature range by accurately modeling the error characteristics of different temperature zones. The combination of the two significantly improves the robustness and accuracy of the temperature measurement system, meeting the requirements for high-precision temperature measurement.

[0026] In some embodiments, the dynamic matching method calculates the PN junction voltage difference of the transistor by applying at least two different currents to the thermoelectric transistor and measuring the corresponding base-emitter voltages.

[0027] Specifically, the dynamic matching method is a temperature measurement method based on the physical characteristics of semiconductors. It achieves high-precision extraction of temperature signals by precisely controlling the magnitude and ratio of the input current. Applying at least two different currents can be understood as providing a stepped current source with a fixed proportional relationship to the temperature-sensing transistor, such as a 1:10 or 1:20 current ratio. This design utilizes the logarithmic characteristics of the PN junction voltage and current, ensuring that the PN junction voltage difference is only related to temperature and independent of the semiconductor saturation current IS. Furthermore, the base-emitter voltage measurement can be achieved through a high-precision analog-to-digital converter to ensure that the acquired voltage data has sufficient resolution and accuracy.

[0028] In detail, this scheme establishes a stable current ratio by applying at least two different currents to the temperature-sensing transistor, effectively suppressing interference caused by dynamic changes in the saturation current IS parameter. Based on this, by accurately measuring the base-emitter voltage and calculating the transistor's PN junction voltage difference, effective elimination of common-mode interference and environmental noise is achieved. This differential operation not only extracts a pure signal linearly related to temperature but also avoids systematic errors caused by dynamic changes in the saturation current IS in single-point measurements. Furthermore, since the acquisition of the base temperature value depends on the transistor's PN junction voltage difference rather than a single-point voltage, the measurement accuracy and stability across the entire temperature range are significantly improved. Combining this scheme with the overall process of obtaining the base temperature value based on the dynamic matching method further optimizes the reliability of temperature measurement, especially demonstrating excellent anti-interference capabilities under complex operating conditions.

[0029] Through the above technical solution, the dynamic matching method achieves high-precision temperature measurement across the entire temperature range, solves the measurement error problem caused by the dynamic change of the saturation current IS, and provides reliable basic data for the subsequent correction of the piecewise error compensation model.

[0030] like Figure 2 As shown, in the dynamic matching method measurement layer, the current source control outputs two currents of different magnitudes, I1 and I2, where I1 = 100μA and I2 = 500μA. These currents are acquired by a high-precision ADC (Analog-to-Digital Converter). BE1 and V BE2 The formula for calculating the PN junction voltage difference of a transistor is as follows:

[0031] Where k is Boltzmann's constant, T is the absolute temperature (in Kelvin), and q is the electron charge.

[0032] The formula for calculating the base temperature value based on the PN junction voltage difference of a transistor is as follows:

[0033] The calculation formula for the piecewise error compensation model is as follows:

[0034] Among them, C0~C 11 These are the compensation coefficients of the polynomial (obtained from data fitting), T base It is the temperature that was collected.

[0035] Detailed explanation of the piecewise error compensation model: 1. Through high and low temperature chamber testing, multiple temperature points are traversed, and the test temperature data and chamber temperature (reference temperature) data are recorded; 2. Weights are assigned to the data of each zone based on the main influencing factors and their complexity; 3. According to the weight allocation ratio and the chamber temperature (reference temperature), the test data of different temperature zones are quantitatively fitted to make the fitted data approximate the chamber temperature (reference temperature); 4. The coefficients in the fitted polynomial, that is, C0~C11 in the formula; 5. In actual work, the temperature data Tbase is obtained, and the compensated data Tcomp can be obtained by substituting it into the corresponding polynomial.

[0036] In some embodiments, the piecewise error compensation model is generated by calibrating at multiple calibration points, including a first temperature zone, a second temperature zone, and a third temperature zone, and by establishing independent compensation functions for different temperature zones.

[0037] The first temperature zone can be understood as the low-temperature region, covering the lower temperature range that the equipment may operate in, such as -40℃ to 0℃; the second temperature zone represents the normal temperature region, typically 0℃ to 85℃; and the third temperature zone corresponds to the high-temperature region, such as 85℃ to 150℃. In practical applications, the selection of calibration points needs to cover key temperature nodes across the entire temperature range to ensure the comprehensiveness and representativeness of the calibration data. The compensation function refers to the mathematical expression designed for each temperature zone, which can be achieved through polynomial fitting, linear interpolation, or other numerical analysis methods. The purpose of introducing the above scheme is to solve the problem that relying solely on a limited number of calibration points cannot fully reflect the nonlinear changes in the relationship between the PN junction voltage difference and temperature of a transistor across the entire temperature range, thereby improving the temperature measurement accuracy under extreme temperatures.

[0038] Specifically, this scheme obtains actual variation data of the PN junction voltage difference of a transistor over a wide temperature range through multi-point calibration, enabling precise capture of the nonlinear characteristics of semiconductors at different temperatures. For example, in the low-temperature region, leakage current interference has a significant impact on the measurement results, so the design of the compensation function needs to focus on this physical effect; while in the high-temperature region, parameter drift becomes the main influencing factor, and the compensation function needs to specifically fit this characteristic. Furthermore, establishing independent compensation functions for different temperature regions allows the compensation logic for each region to be customized according to its unique physical phenomena, thereby significantly improving the adaptability and accuracy of the compensation model under extreme temperatures. Combining this scheme with the dynamic matching method further optimizes the correction process for the initial temperature value, ensuring a more reliable output of the final temperature value.

[0039] In summary, the above technical solutions not only solve the problem of insufficient compensation accuracy in full-temperature-range temperature measurement, but also effectively address complex physical effects such as leakage current interference in the low-temperature region and parameter drift in the high-temperature region, providing a solid technical guarantee for high-precision terminal temperature measurement.

[0040] In some embodiments, the calibration points include at least four temperature points: -40°C, 25°C, 85°C, and 150°C.

[0041] In this context, calibration points refer to the key temperature references used for calibration in the piecewise error compensation model. In practical applications, these calibration points are selected based on the typical temperature distribution of the power equipment's operating environment, and can be implemented using a high-precision constant temperature chamber or a standard temperature source. The purpose of introducing these specific temperature points is to ensure that the compensation model can comprehensively cover low-temperature, normal-temperature, medium-temperature, and high-temperature ranges, thereby improving the overall accuracy and reliability of the temperature measurement system.

[0042] Specifically, the -40℃ calibration point targets extreme low-temperature environments. Since semiconductor materials exhibit significant nonlinear characteristics at low temperatures, this point allows the model to accurately capture error patterns in the low-temperature region. 25℃ serves as a normal temperature reference point, as it represents the typical operating temperature of the equipment, providing a reliable reference for the mid-temperature range. 85℃ corresponds to the mid-temperature range, covering common heating scenarios in electricity meters and optimizing the model's response to dynamic interference in the mid-temperature range. 150℃ focuses on the high-temperature limit; considering the potential for burn-off due to abnormal terminal heating, this point ensures that the compensation function in the high-temperature range can effectively suppress measurement drift. Through this calibration point layout covering the entire temperature range, the model can comprehensively reflect the temperature-range characteristics of the dynamic changes in the saturation current IS, thereby achieving targeted error correction in different temperature ranges.

[0043] Furthermore, the above scheme ensures accurate calibration of the piecewise error compensation model across the entire temperature range by explicitly designating four key temperature points as calibration benchmarks. This design not only solves the problem of lack of standardized calibration point selection but also significantly improves the compensation accuracy of the model under extreme temperature conditions, thereby enhancing the reliability of terminal temperature measurement. By introducing a multi-point calibration mechanism, combined with the dynamic matching method and the piecewise error compensation model, a complete temperature measurement solution is formed, effectively addressing the full-temperature-range measurement drift problem caused by the dynamic changes in the saturation current IS during operation.

[0044] In some embodiments, the compensation function is a polynomial, and the order of the polynomial used in the third temperature zone is not lower than that of the first and second temperature zones.

[0045] Specifically, the compensation function refers to the mathematical expression used to correct the initial temperature value. It can be implemented using polynomials of different orders, such as linear functions, quadratic polynomials, and cubic polynomials. Its purpose is to flexibly characterize the complex nonlinear mapping relationship between the transistor's PN junction voltage difference and temperature, adapting to the dynamic changes in error characteristics over a wide temperature range. The high-temperature range refers to the region with relatively high temperatures, where the PN junction saturation current changes drastically with increasing temperature, resulting in a significant nonlinear characteristic in the relationship between the transistor's PN junction voltage difference and temperature. The order of the polynomial can be adjusted according to actual needs; for example, a third-order or higher polynomial can be selected in the high-temperature range to more accurately fit the error change trend.

[0046] In detail, the piecewise error compensation model establishes independent compensation functions for different temperature ranges by calibrating multiple calibration points. In the low and medium temperature ranges, since the relationship between the transistor's PN junction voltage difference and temperature is relatively linear, a lower-order polynomial can be used for compensation. However, in the high temperature range, the dynamic interference of the PN junction saturation current intensifies, and the error curve exhibits higher-order nonlinear characteristics. At this point, if a low-order polynomial is still used, it cannot adequately fit the error variation trend in this region, leading to a decrease in measurement accuracy. Therefore, by increasing the order of the polynomial in the high-temperature range, it is possible not only to effectively address the nonlinear error problem under high-temperature conditions but also to maintain the compensation efficiency in the low and medium temperature ranges while enhancing the robustness of temperature measurement in the high-temperature range. Furthermore, this scheme, combined with the dynamic matching method and multi-point calibration mechanism, further optimizes the temperature measurement accuracy across the entire temperature range, solving the measurement error problem caused by the incomplete elimination of the dynamic interference of the saturation current IS in existing technologies.

[0047] In some embodiments, the rate of change of voltage difference or the rate of change of power supply voltage is continuously monitored, and the final temperature value is dynamically compensated in real time based on the obtained rate of change of the transistor PN junction voltage difference or the rate of change of power supply voltage.

[0048] Specifically, the rate of change of voltage difference refers to the instantaneous trend of voltage difference change over a certain time interval, which can be realized through differentiating circuits or digital signal processing units. In practical applications, monitoring this rate of change can be accomplished by using an analog-to-digital converter with a high sampling frequency combined with a sliding window algorithm, aiming to capture the rapid fluctuation characteristics of voltage parameters. The rate of change of power supply voltage can be understood as the rate of voltage fluctuation in the power supply circuit, specifically realized through a voltage detection circuit in conjunction with a differential amplifier, aiming to reflect the impact of power supply stability on the measurement results. Dynamic real-time compensation refers to the instantaneous integration of the rate of change data into the temperature correction stage, which can be achieved through proportional-integral-derivative control algorithms or adaptive filtering algorithms, aiming to eliminate measurement errors caused by voltage fluctuations.

[0049] In detail, this solution addresses temperature measurement inaccuracies caused by rapid voltage parameter fluctuations by constructing a complete dynamic monitoring and compensation mechanism. First, the system continuously collects real-time data on voltage difference and power supply voltage, calculating their rate of change—a process that ensures accurate perception of dynamic interference. Second, the obtained rate of change data is compared with a preset threshold; when it exceeds the set range, a compensation mechanism is triggered. Notably, the compensation algorithm adjusts based on the rate of change rather than the absolute value, demonstrating a deep adaptation to the dynamic characteristics of interference. Finally, by feeding the compensation results back to the final temperature value calculation in real time, the output is continuously optimized during voltage parameter fluctuations, preventing error accumulation. Based on this, the solution works organically with a piecewise error compensation model, retaining the advantages of static compensation while compensating for its shortcomings in dynamic response, thus maintaining continuous accuracy and stability of temperature measurement under common transient conditions in power equipment.

[0050] The above technical solution effectively solves the problem of inaccurate temperature measurement caused by rapid fluctuations in voltage parameters, and significantly improves the accuracy and reliability of temperature measurement, especially under transient conditions commonly encountered during the operation of power equipment.

[0051] In some embodiments, when the base temperature value enters the high temperature range, an enhanced measurement mode is adopted by increasing the current ratio or extending the measurement stabilization time.

[0052] Specifically, the high-temperature range refers to the temperature range where the dynamic change of the transistor's saturation current IS parameter intensifies significantly. This range can be set above a specific temperature threshold based on the actual application scenario. Increasing the current ratio can be achieved by adjusting the constant current source output, raising the standard 10:1 current ratio to a higher ratio, such as 20:1 or 30:1. The purpose is to suppress noise interference at high temperatures by amplifying the signal strength of the transistor's PN junction voltage difference. Extending the measurement settling time refers to adding a waiting period after applying the measurement current. This can be set to several times the normal measurement time. The purpose is to ensure sufficient stability of the base-emitter voltage and avoid the impact of transient fluctuations on measurement accuracy.

[0053] In detail, this scheme determines whether the system has entered the high-temperature range by monitoring the initial temperature value in real time, and triggers an enhanced measurement mechanism accordingly. When the initial temperature value is detected to have reached the high-temperature range, the system automatically switches to the enhanced measurement mode, selecting one or more combined strategies, such as increasing the current ratio or extending the measurement settling time. Increasing the current ratio effectively improves the signal-to-noise ratio of the transistor's PN junction voltage difference signal, thereby offsetting the impact of dynamic changes in the saturation current IS parameter on measurement stability at high temperatures. Extending the measurement settling time addresses the transistor's response delay characteristics at high temperatures, ensuring the reliability of the acquired data by increasing the stabilization waiting time. Overall, this dynamic adjustment mechanism is activated only in the high-temperature range, avoiding unnecessary resource consumption at low or normal temperatures. It also specifically addresses the measurement error problem caused by increased saturation current IS interference in the high-temperature range, significantly improving the accuracy and robustness of high-temperature measurements.

[0054] The present invention also provides a temperature measurement system integrating a terminal and an electricity meter, comprising: The dynamic matching module is used to obtain the base temperature value by measuring the voltage difference between the PN junctions of the voltage difference transistor based on the dynamic matching method. The dynamic compensation module is used to call the pre-stored segmented error compensation model to correct the base temperature value and output the final temperature value.

[0055] like Figure 2 As shown, the system includes a dynamic matching measurement layer, a static segmented standard layer, and a dynamic compensation execution layer. The dynamic matching measurement layer is a dynamic matching module, the dynamic compensation execution layer is a dynamic compensation module, and the static segmented standard layer is used for segmented calibration of different temperature ranges. It fits data from different temperature ranges to generate data, stores the data from different temperature ranges, and waits for matching with different temperature range models in the dynamic compensation execution layer. The dynamic compensation execution layer includes a low-temperature model, a medium-temperature model, and a high-temperature model. The low-temperature model corresponds to a base temperature value less than or equal to 50℃, the medium-temperature model corresponds to a base temperature value greater than 50℃ but less than or equal to 100℃, and the high-temperature model corresponds to a base temperature value greater than 100℃. The low-temperature model, medium-temperature model, and high-temperature model are matched with the data fitted and generated in the static segmented calibration layer, and the final temperature is obtained after error calculation. The final temperature is output to the application layer, which includes a display device, a communication device, and an execution device. The display device is used to display the current temperature of the terminal, the communication device is used for information communication, and the execution device is used to control the terminal temperature.

[0056] This comprehensive solution significantly improves the temperature measurement accuracy of transistor PN junctions by integrating three technologies: a dynamic matching method is used to eliminate the influence of saturation current (IS), ensuring the stability of ΔVBE measurement; a four-point segmented calibration strategy is employed to establish accurate error models for different temperature ranges (especially the 150℃ high-temperature range); and nonlinear real-time compensation technology is combined to dynamically correct errors introduced by thermal inertia and power supply fluctuations. This integrated solution dramatically improves the temperature measurement accuracy in the 150℃ high-temperature range from ±8.2℃ using traditional methods to ±0.9℃, an improvement of 89%, while maintaining high-precision measurement performance across the entire temperature range.

[0057] The present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the temperature measurement method of the fusion terminal and the energy meter in the above embodiments.

[0058] This invention provides an electronic device, including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; When a processor executes a program stored in memory, it implements the steps of the method described in the above embodiments.

[0059] The above is a detailed description of the preferred embodiments of the present invention. However, the present invention is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A temperature measurement method integrating a terminal and an electricity meter, characterized in that, include: Based on the dynamic matching method, the base temperature value is obtained by measuring the voltage difference between the PN junctions of the transistor and calculating it. The pre-stored segmented error compensation model is invoked to correct the base temperature value, and the final temperature value is output.

2. The temperature measurement method for the integrated terminal and energy meter according to claim 1, characterized in that, The dynamic matching method calculates the PN junction voltage difference of the transistor by applying at least two different currents to the thermoelectric transistor and measuring the corresponding base-emitter voltage.

3. The temperature measurement method for the integrated terminal and energy meter according to claim 1, characterized in that, The segmented error compensation model is generated by calibrating at multiple calibration points, including the first temperature zone, the second temperature zone, and the third temperature zone, and by establishing independent compensation functions for different temperature zones.

4. The temperature measurement method of the integrated terminal and the energy meter according to claim 3, characterized in that, The calibration points include at least four temperature points: -40℃, 25℃, 85℃, and 150℃.

5. The temperature measurement method for the integrated terminal and energy meter according to claim 3, characterized in that, The compensation function is a polynomial, and the order of the polynomial used in the third temperature zone is no less than that in the first and second temperature zones.

6. The temperature measurement method for the integrated terminal and energy meter according to claim 1, characterized in that, The rate of change of voltage difference or power supply voltage is continuously monitored, and the final temperature value is dynamically compensated in real time based on the obtained rate of change of the PN junction voltage difference of the transistor or the rate of change of power supply voltage.

7. The temperature measurement method for the integrated terminal and energy meter according to claim 1, characterized in that, When the base temperature value enters the high temperature range, an enhanced measurement mode is adopted by increasing the current ratio or extending the measurement stabilization time.

8. A temperature measurement system integrating a terminal and an electricity meter, characterized in that, include: The dynamic matching module is used to obtain the base temperature value by measuring the voltage difference between the PN junctions of the voltage difference transistor based on the dynamic matching method. The dynamic compensation module is used to call the pre-stored segmented error compensation model to correct the base temperature value and output the final temperature value.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the method as described in any one of claims 1-7.

10. An electronic device, characterized in that, It includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; Memory, used to store computer programs; A processor, when executing a program stored in memory, implements the steps of the method according to any one of claims 1-7.

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