High-voltage analog switch circuit

Abstract

The invention discloses a high-voltage analog switch circuit, and relates to the technical field of switches. The high-voltage analog switch circuit comprises a signal processing module which is used for converting a received control signal into a pair of first modulation signal and second modulation signal which are opposite in logic; the carrier generator module is used for generating a first carrier signal and a second carrier signal; the driving module is respectively connected with the signal processing module and the carrier generator module, and the driving module is used for respectively modulating the first carrier signal and the second carrier signal according to the first modulation signal and the second modulation signal to generate a first driving signal and a second driving signal; and the switch module is connected with the driving module, and the switch module is used for executing a switch switching action according to the first driving signal and the second driving signal. And compared with the relay, the relay has the advantages of high response speed, no limitation of action times, long service life, no switching interference, high switching voltage and the like.

Description

Technical Field

[0001] This invention relates to the field of switch technology, and more particularly to a high-voltage analog switch circuit. Background Technology

[0002] Relays are automatic switching elements with isolation functions, widely used in remote control, telemetry, communication, automatic control, mechatronics and power electronic equipment, and are one of the most important control elements.

[0003] However, relays can generate electromagnetic interference or signal interference during operation, which may cause equipment malfunctions or signal distortion. At the same time, relays take 10ms-20ms to act, have a slow response speed, and have a limited number of actions, resulting in a short service life. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the purpose of this invention is to provide a high-voltage analog switch circuit to replace relays.

[0005] According to one aspect of the present invention, a high-voltage analog switching circuit is provided, comprising: The signal processing module is used to convert the received control signal into a pair of logically opposite first and second modulation signals; A carrier generator module is used to generate a first carrier signal and a second carrier signal; A driving module is connected to the signal processing module and the carrier generator module respectively. The driving module is used to modulate the first carrier signal and the second carrier signal according to the first modulation signal and the second modulation signal to generate a first driving signal and a second driving signal respectively. A switch module is connected to the drive module, and the switch module is used to perform a switch switching action according to the first drive signal and the second drive signal.

[0006] The high-voltage analog switch circuit of the present invention converts the control signal into a pair of logically opposite first modulation signal and second modulation signal through the signal processing module. The drive module modulates the first carrier signal and the second carrier signal generated by the carrier generator module according to the first modulation signal and the second modulation signal to generate the first drive signal and the second drive signal to control the switch module to perform the switching action. In this way, it can replace the relay. Compared with the relay, it has a fast response speed, no limit on the number of times it can be operated, and therefore a long service life.

[0007] In some embodiments, the switching module includes: At least one first switch module is connected to the drive module, and the first switch module is used to perform a switch switching action according to the first drive signal and the second drive signal; At least one second switch module is connected to the drive module, the output terminal of the second switch module is connected to the output terminal of the first switch module, and the second switch module is used to perform a switch switching action according to the first drive signal and the second drive signal; The logic of the second switch module is the opposite of that of the first switch module in executing the switch switching action.

[0008] In some embodiments, the first switch module includes: A first isolation unit is connected to the driving module. The first isolation unit is used to perform isolation coupling processing on the second driving signal to obtain a second isolation coupling signal. A voltage doubler rectifier unit is connected to the first isolation unit. The voltage doubler rectifier unit is used to perform voltage doubler rectification on the second isolated coupling signal to obtain a voltage doubler rectified signal. The second isolation unit is connected to the driving module. The second isolation unit is used to perform isolation coupling processing on the first driving signal to obtain a first isolation coupling signal. The first switching unit is connected to the voltage doubler rectifier unit and the second isolation unit respectively. The first switching unit is used to perform a switching action according to the voltage doubler rectifier signal and the first isolation coupling signal.

[0009] In some implementations, the first isolation unit is a transformer; and / or The second isolation unit is a transformer.

[0010] In some embodiments, the voltage doubler rectifier unit includes a thirteenth capacitor, a first sub-diode, and a second sub-diode, wherein a first terminal of the first sub-diode is connected to a second terminal of the thirteenth capacitor, and a second terminal of the second sub-diode is connected to a second terminal of the thirteenth capacitor.

[0011] In some embodiments, the first switching unit includes a first MOSFET, a second MOSFET, and a fifth MOSFET, wherein the source of the first MOSFET is connected to the source of the second MOSFET, the gate of the first MOSFET is connected to the gate of the second MOSFET, the drain of the fifth MOSFET is connected to the gate of the first MOSFET, and the source of the fifth MOSFET is connected to the source of the first MOSFET.

[0012] In some embodiments, the first switch module and the second switch module have the same circuit composition. The first isolation unit of the second switch module is used to perform isolation coupling processing on the first drive signal to obtain a first isolation coupling signal; the second isolation unit is used to perform isolation coupling processing on the second drive signal to obtain a second isolation coupling signal.

[0013] In some implementations, the signal processing module includes a dual-channel high-speed NOT gate circuit for converting the received control signal into a pair of logically opposite first and second modulation signals.

[0014] In some embodiments, the carrier generator module includes: An active crystal, the active crystal being used to generate a carrier frequency signal; A high-speed NOT gate circuit is connected to the active crystal, and the high-speed NOT gate circuit is used to divide the received carrier frequency signal into a first carrier signal and a second carrier signal.

[0015] In some implementations, the driver module includes: The first driving module is connected to the signal processing module and the carrier generator module respectively. The first driving module is used to modulate the first carrier signal according to the first modulation signal to generate the first driving signal. The second driving module is connected to the signal processing module and the carrier generator module respectively. The second driving module is used to modulate the second carrier signal according to the second modulation signal to generate the second driving signal.

[0016] Compared with the prior art, the high-voltage analog switch circuit and night light of the present invention convert the control signal into a pair of logically opposite first modulation signal and second modulation signal through the signal processing module. The drive module modulates the first carrier signal and the second carrier signal generated by the carrier generator module according to the first modulation signal and the second modulation signal to generate the first drive signal and the second drive signal to control the switch module to perform the switching action. In this way, it can replace the relay. Compared with the relay, it has the advantages of fast response speed, no limit on the number of operations, long service life, no switching interference, and high switching voltage. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the module composition of a high-voltage analog switch circuit according to an embodiment of the present invention; Figure 2 This is a circuit schematic diagram of a processing module according to an embodiment of the present invention. Figure 3 This is a circuit schematic diagram of a carrier generator module according to one embodiment of the present invention; Figure 4 This is a circuit schematic diagram of the first driving module according to an embodiment of the present invention; Figure 5 This is a circuit schematic diagram of the second driving module according to an embodiment of the present invention; Figure 6This is a circuit schematic diagram of a switching module according to an embodiment of the present invention; Figure 7 The equivalent functional circuit of the switching module according to one embodiment of the present invention; Figure 8 The waveform diagrams are shown for each signal according to one embodiment of the present invention. Detailed Implementation

[0018] The present invention will now be described in further detail with reference to the accompanying drawings.

[0019] This invention provides a high-voltage analog switch circuit, such as... Figure 1 As shown, the high-voltage analog switch circuit includes a signal processing module 10, a carrier generator module 20, a drive module 30, and a switch module 40.

[0020] like Figure 2 As shown, the signal processing module 10 is used to convert the received control signal into a pair of logically opposite first and second modulation signals. Specifically, the signal processing module 10 includes a dual-channel high-speed NOT gate circuit U2. The dual-channel high-speed NOT gate circuit U2 is an inverter with Schmitt trigger characteristics and has a certain anti-interference capability. The first pin of the dual-channel high-speed NOT gate circuit U2 is connected to connector J1, which is grounded. The second pin of the dual-channel high-speed NOT gate circuit U2 is grounded. The third pin of the dual-channel high-speed NOT gate circuit U2 is connected to its own sixth pin. The fifth pin of the dual-channel high-speed NOT gate circuit U2 is connected to a +3.3V voltage. Connector J1 is used to receive the control signal and transmit it to the dual-channel high-speed NOT gate circuit U2. The dual-channel high-speed NOT gate circuit U2 performs pre-processing on the received control signal, that is, the dual-channel high-speed NOT gate circuit U2 is used to convert the received control signal into a pair of logically opposite first and second modulation signals. The first modulation signal is output from the sixth pin of the dual-channel high-speed NOT gate circuit U2 and the second modulation signal is output from the fifth pin. The control signal is a PWM signal, the corresponding first modulation signal is a PWMP signal, and the second modulation signal is a PWMPN signal.

[0021] like Figure 3As shown, the carrier generator module 20 is used to generate a first carrier signal and a second carrier signal. Specifically, the carrier generator module 20 includes an active crystal Y1 and a high-speed NOT gate circuit U1. The second pin of the active crystal Y1 is grounded, and the third pin of the active crystal Y1 is grounded through the thirty-sixth capacitor C36. The third pin of the active crystal Y1 serves as the output terminal. The active crystal Y1 is used to generate a carrier frequency signal and outputs the carrier frequency signal through the third pin. The frequency of the carrier frequency signal can be 10MHz. The fourth pin of the active crystal Y1 is connected to a +3.3V voltage through the sixth inductor L6. The two ends of the sixth inductor L6 are grounded through the sixth capacitor C6 and the seventh capacitor C7, respectively. The sixth capacitor C6, the seventh capacitor C7, and the sixth inductor L6 constitute the power supply decoupling filter circuit of the active crystal Y1 to decouple and filter the power supply of the active crystal Y1. The capacitor C36 connected to the output terminal (i.e., the third pin) of the active crystal Y1 can reduce high-frequency noise interference and improve the stability of the crystal oscillator.

[0022] like Figure 3 As shown, the high-speed NOT gate U1 is connected to the active crystal Y1. The high-speed NOT gate U1 is used to divide the received carrier frequency signal into a first carrier signal and a second carrier signal. Specifically, the second pin of the high-speed NOT gate U1 is connected to the third pin of the active crystal Y1 to receive the carrier frequency signal. The third pin of the high-speed NOT gate U1 is grounded. The fifth pin of the high-speed NOT gate U1 is connected to VSS. The fifth pin of the high-speed NOT gate U1 is also grounded through the second capacitor C2 and the third capacitor C3, respectively. The second capacitor C2 and the third capacitor C3 are the components of the high-speed NOT gate U1. The power supply decoupling filter capacitor decouples and filters the power supply of the high-speed NOT gate U1. The fourth pin of the high-speed NOT gate U1 is connected to the second resistor R2 and the fourth resistor R4 respectively. The high-speed NOT gate U1 buffers and drives the received carrier frequency signal to split it into two outputs. One output outputs the first carrier signal (i.e., f-pwm1) through the second resistor R2, and the other outputs the second carrier signal (i.e., f-pwm2) through the fourth resistor R4. The frequencies of the first carrier signal and the second carrier signal are the same as the carrier frequency signal, which is 10MHz.

[0023] like Figure 4 and Figure 5As shown, the drive module 30 is connected to the signal processing module 10 and the carrier generator module 20 respectively. The drive module 30 is used to modulate the first carrier signal and the second carrier signal according to the first modulation signal and the second modulation signal to generate the first drive signal and the second drive signal respectively. Specifically, the drive module 30 includes a first drive module U3 and a second drive module U4. The first pin of the first drive module U3 is connected to the sixth pin of the dual-channel high-speed NOT gate circuit U2 of the signal processing module 10 to receive the first modulation signal (i.e., PWMP). The second pin of the first drive module U3 is grounded. The second pin of the first drive module U3 is connected to the fifth pin of the first drive module U3 through the first capacitor C1 and the fourth capacitor C4 respectively. The first drive module U3 is connected to a +9V voltage at its fifth pin. The first capacitor C1 and the fourth capacitor C4 are power supply decoupling and filtering capacitors for the first drive module U3, which decouple and filter the power supply of the first drive module U3. The third pin of the first drive module U3 is connected to the second resistor R2 connected to the fourth pin of the high-speed NOT gate circuit U1 of the carrier generator module 20 to receive the first carrier signal (i.e., f-pwm1). The fourth pin of the first drive module U3 is connected to the eleventh capacitor C11. The first drive module U3 is used to modulate the first carrier signal according to the first modulation signal to generate the first drive signal (i.e., 1-2P). The generated first drive signal is then DC blocked by the eleventh capacitor C11.

[0024] like Figure 5 As shown, the first pin of the second drive module U4 is connected to the fourth pin of the dual-channel high-speed NOT gate circuit U2 of the signal processing module 10 to receive the second modulation signal (i.e., PWMN). The second pin of the second drive module U4 is grounded. The second pin of the second drive module U4 is connected to the fifth pin of the second drive module U4 through the twelfth capacitor C12 and the fifteenth capacitor C15 respectively. The fifth pin of the second drive module U4 is connected to a +9V voltage. The twelfth capacitor C12 and the fifteenth capacitor C15 are power supply decoupling filter capacitors for the second drive module U4, which decouple and filter the power supply of the second drive module U4. The third pin of the second drive module U4 is connected to the fourth resistor R4 connected to the fourth pin of the high-speed NOT gate circuit U1 of the carrier generator module 20 to receive the second carrier signal (i.e., f-PWM2). The fourth pin of the second drive module U4 is connected to the sixteenth capacitor C16. The second drive module U4 is used to modulate the second carrier signal according to the second modulation signal to generate the second drive signal (i.e., 1-3N). The generated second drive signal is then DC blocked by the sixteenth capacitor C16.

[0025] like Figure 6As shown, the switch module 40 is connected to the drive module 30. The switch module 40 is used to perform a switch switching action according to the first drive signal and the second drive signal. Specifically, the switch module 40 includes at least one first switch module and at least one second switch module. The output terminal of one switch module and the output terminal of one second switch module are connected to form a single-pole double-throw switch. The output terminals of two switch modules are respectively connected to the output terminals of two second switch modules to form a double-pole double-throw switch, and so on. When there are N first switch modules and N second switch modules, an N-pole double-throw switch can be formed. For better illustration, in this embodiment, two first switch modules and two second switch modules are used as examples. The two first switch modules are referred to as first switch module 411 and first switch module 412, and the two second switch modules are referred to as second switch module 421 and second switch module 422.

[0026] like Figure 6As shown, the first switch module 411, the first switch module 412, the second switch module 421, and the second switch module 422 are all connected to the drive module 30. Each of these modules is used to perform a switch switching action based on a first drive signal and a second drive signal. The logic for executing the switch switching action of the first switch module 411 and the first switch module 412 is the same, and the logic for executing the switch switching action of the second switch module 421 and the second switch module 422 is the same, but the logic for executing the switch switching action of the first switch module 411 and the second switch module 421 is opposite. Specifically, the logic for executing the switch switching action of the first switch module 411 and the first switch module 412... The circuit composition of the first switch module 411, the first switch module 412, the second switch module 421, and the second switch module 422 are the same. The first switch module 411, the first switch module 412, the second switch module 421, and the second switch module 422 respectively include the first isolation unit T1-1, the first isolation unit T1-2, the first isolation unit T1-3, and the first isolation unit T1-4; the voltage doubler rectifier unit 431, the voltage doubler rectifier unit 432, the voltage doubler rectifier unit 433, and the voltage doubler rectifier unit 434; the second isolation unit T2-1, the second isolation unit T2-2, the second isolation unit T2-3, and the second isolation unit T2-4; and the first switch unit 441, the first switch unit 442, the first switch unit 443, and the first switch unit 444. Unit T1-1 and the first isolation unit T1-2 are both connected to the sixteenth capacitor C16, which is connected to the fourth pin of the second drive module U4 of the drive module 30, to receive the second drive signal after DC blocking and to perform isolation coupling processing on the second drive signal to obtain the second isolation coupling signal; the first isolation units T1-3 and T1-4 are both connected to the eleventh capacitor C11, which is connected to the fourth pin of the first drive module U3 of the drive module 30, to receive the first drive signal after DC blocking and to perform isolation coupling processing on the first drive signal to obtain the first isolation coupling signal; the voltage doubler rectifier units 431, 432, 433, and 434 are respectively connected to the first Isolation unit T1-1, first isolation unit T1-2, first isolation unit T1-3 and first isolation unit T1-4 are connected. Voltage doubler rectifier units 431 and 432 are used to perform voltage doubler rectification on the second isolation coupling signal to obtain a voltage doubler rectified signal. Voltage doubler rectifier units 433 and 434 are used to perform voltage doubler rectification on the first isolation coupling signal to obtain a voltage doubler rectified signal. Second isolation units T2-1 and T2-2 are both connected to the eleventh capacitor C11 connected to the fourth pin of the first drive module U3 of the drive module 30 to receive the first drive signal after DC blocking and to perform isolation coupling on the first drive signal to obtain the first isolation coupling signal.The second isolation units T2-3 and T2-4 are both connected to the sixteenth capacitor C16, which is connected to the fourth pin of the second drive module U4 of the drive module 30, to receive the second drive signal after DC blocking and to perform isolation coupling processing on the second drive signal to obtain the second isolation coupling signal; the first switching units 441, 442, 443, and 444 are respectively connected to the voltage doubler rectifier units 431, 432, 433, and 434, respectively. The first switching units 441, 442, 443, and 444 are also connected to the second isolation units T2-1, T2-2, T2-3, and T2-4, respectively. The first switching units 441, 442, 443, and 444 are respectively used to perform switching actions according to the voltage doubler rectified signal and the first / second isolation coupling signal.

[0027] like Figure 6 As shown, the first isolation unit T1-1, the first isolation unit T1-2, the first isolation unit T1-3, and the first isolation unit T1-4 are all transformers, and the second isolation unit T2-1, the second isolation unit T2-2, the second isolation unit T2-3, and the second isolation unit T2-4 are all transformers. The first terminal of the main stage of the transformer is used as a signal receiving terminal to receive the corresponding first driving signal / second driving signal. The second terminal of the main stage of the transformer is grounded, and the secondary stage of the transformer is used as an output terminal to output the corresponding second isolation coupling signal / first isolation coupling signal.

[0028] like Figure 6As shown, voltage doubler rectifier units 431, 432, 433, and 434 respectively include thirteenth capacitors C13-1, C13-2, C13-3, and C13-4, and third diodes D3-1, D3-2, D3-3, and D3-4. Each of the third diodes D3-1, D3-2, D3-3, and D3-4 includes a first sub-diode and a second sub-diode. The first terminals of the thirteenth capacitors C13-1, C13-2, C13-3, and C13-4 are respectively connected to the first terminal of the secondary winding of the corresponding transformer. The first terminals of the first sub-diodes of diodes D3-2, D3-3, and D3-4 are connected to the second terminals of capacitors C13-1, C13-2, C13-3, and C13-4, respectively. The second terminals of the second sub-diodes of diodes D3-1, D3-2, D3-3, and D3-4 are connected to the second terminals of capacitors C13-1, C13-2, C13-3, and C13-4, respectively. The first terminals of the second sub-diodes of diodes D3-1, D3-2, D3-3, and D3-4 are connected to the second terminals of the corresponding transformer secondary windings.

[0029] like Figure 6As shown, the first switching unit 441, first switching unit 442, first switching unit 443, and first switching unit 444 respectively include first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4; second MOSFETs Q2-1, Q2-2, Q2-3, and Q2-4; and fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4. The sources of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4 are respectively connected to... The sources of the second MOSFETs Q2-1, Q2-2, Q2-3, and Q2-4 are connected. The gates of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4 are connected to the gates of the second MOSFETs Q2-1, Q2-2, Q2-3, and Q2-4, respectively. The drains of the fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4 are connected to the gates of the first MOSFETs Q1-1, Q1-2, and Q1-3, respectively. The gates of the first MOSFETs Q1-4 are connected to the gates of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4, respectively. The sources of the fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4 are connected to the sources of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4, respectively. The gates of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4 are connected to the second terminals of their respective first sub-diodes. The sources of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4 are connected to the gates of the first MOSFETs Q1-1, Q1-2, Q1-3, and Q1-4, respectively. The gates of the fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4 are respectively connected to the first terminals of the secondary windings of the corresponding second isolation units T2-1, T2-2, T2-3, and T2-4. The sources of the fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4 are respectively connected to the second terminals of the secondary windings of the corresponding second isolation units T2-1, T2-2, T2-3, and T2-4.

[0030] like Figure 6As shown, the high-voltage analog switch circuit also includes eighth resistors R8-1, R8-2, R8-3, and R8-4, and fifteenth resistors R15-1, R15-2, R15-3, and R15-4. The first terminals of the eighth resistors R8-1, R8-2, R8-3, and R8-4 are respectively connected to the second terminals of the corresponding first sub-diodes. The second terminals of the eighth resistors R8-1, R8-2, R8-3, and R8-4 are respectively connected to the first terminals of the corresponding second sub-diodes. The first and second terminals of the fifteenth resistors R15-1, R15-2, R15-3, and R15-4 are respectively connected to the gate and source of the corresponding fifth MOSFETs Q5-1, Q5-2, Q5-3, and Q5-4. The eighth resistors R8-1, R8-2, R8-3, and R8-4, as well as the fifteenth resistors R15-1, R15-2, R15-3, and R15-4, are mainly used for anti-interference to prevent the connected MOSFETs from being mis-energized.

[0031] like Figure 6 As shown, the switching module 40 is the equivalent switching circuit of the transformer-isolated drive MOS. This circuit can be equivalent to... Figure 7 The functional circuit shown is divided into path A and path B, and is a double-pole double-throw circuit. Paths A and B operate on the same principle and are the core technology of this design. The working principle of the switch is described in detail here, as follows: Figure 6 As shown, the circuits for paths A and B are the same; here we will only discuss path A. This path is divided into two parts, namely, the opening and closing of path A and B (i.e., the first switch module 411) and path B and C (i.e., the second switch module 421). The circuits used to implement these two parts are the same, except that the opening and closing are reversed when the transformer is loaded with a signal. Therefore, the function implemented is that when the upper part is open, the lower part is closed, and when the lower part is closed, the upper part is open (the loading positions of 1-2P and 1-3N are reversed). Here we will only explain the switching operation between A and B. When the second drive signal (i.e., 1-3N) is a 10MHz drive pulse, it passes through the first isolation... Isolated from unit T1-1, this 50% duty cycle waveform is applied to the third diode D3-1 via the thirteenth capacitor C13-1. Here, the secondary winding of the first isolation unit T1-1, the thirteenth capacitor C13-1, and the third diode D3-1 form a voltage doubler rectifier circuit, charging the gs capacitor of the first MOSFET Q1-1 and the second MOSFET Q2-1, causing the first MOSFET Q1-1 and the second MOSFET Q2-1 to conduct simultaneously, thereby enabling conduction between switches A and C. Simultaneously, because the first drive signal and the second drive signal operate complementaryly, such as... Figure 8The waveform shown is shown. Therefore, at this time, the second isolation unit T2-1 has no signal waveform, causing the fifth MOSFET Q5-1 to be constantly cut off. The open circuit between the ds and s of the fifth MOSFET Q5-1 has no effect on the gates of the first MOSFET Q1-1 and the second MOSFET Q2-1. When the second drive signal is zero and the first drive signal is a 10MHz 50% duty cycle pulse wave, the ds of the fifth MOSFET Q5-1 operates intermittently at a switching frequency of 10MHz, causing the gate voltages of the first MOSFET Q1-1 and the second MOSFET Q2-1 to discharge rapidly to zero, thereby causing the switch ac to be in the cut-off state in both directions. Similarly, the control flow of df can be referred to ac, and the control flow of ef can be referred to ca, so it will not be repeated here.

[0032] like Figure 6 As shown, the signal control flow of the high-voltage analog switch circuit in this embodiment is as follows: When the high-voltage analog switch circuit is powered on, the active crystal Y1 starts working. After being buffered by the high-speed NOT gate circuit U1, the main drive capability is improved. It is split into two to generate two 10MHz signals, the first carrier signal and the second carrier signal (i.e., f-pwm1 and f-pwm2), which are output to the third pin of the first drive module U3 and the second drive module U4 of the drive module 30. At this time, if the input of the connector J1 connected to the signal processing module 10 is high (the logic of PWM is 1), PWMP=0 low level and PWMN=1 high level (i.e., the first modulation signal and the second modulation signal). This level is simultaneously sent to the first pin of the first drive module U3 and the second drive module U4 of the drive module 30. At this time, the fourth pin of the first drive module U3 has no output 1-2P=0 (i.e., the first drive signal), and the fourth pin of the second drive module U4 has an output of a 10MHz 50% duty cycle drive pulse waveform (i.e., the second drive signal). The second drive signal is applied to T1, turning on the first MOSFET Q1-1 and the second MOSFET Q2-1, thus connecting ab. Simultaneously, it is applied to the second isolation unit T2-3, causing the fifth MOSFET Q5-3 to operate in an intermittent on-state between its ds and es. This ensures that the gate levels of the first MOSFET Q1-3 and the second MOSFET Q2-3 are zero, and that bc is reliably in an open-circuit state. The operation of path B is the same, thus achieving the desired result. Figure 7 As shown, a double-pole double-throw high-voltage electronic analog switch function is implemented under PWM signal level control. Each switch uses two MOSFETs, such as the first MOSFET Q1 connected to the second MOSFET Q2, ensuring that when the switch is off, neither AC nor CA conducts in either direction. The first MOSFET Q1, the second MOSFET Q2, and the fifth MOSFET Q5 are high-voltage MOSFETs, and their voltage, current, and internal resistance parameters determine the switch's withstand voltage, current, and other operating parameters. Similarly, the control flow for DF can be referenced from AC, and the control flow for EF can be referenced from CA, so they will not be elaborated further here.

[0033] The high-voltage analog switch circuit of this embodiment realizes an analog switch switching circuit through semiconductor device circuit. Compared with general analog switch chips, it has high withstand voltage and current. Compared with relays, it has the advantages of fast response speed, no limit on the number of operations, long service life, no switching interference, and high switching voltage, thus it can replace relays.

[0034] The above descriptions are merely some embodiments of the present invention. Those skilled in the art can make various modifications and improvements without departing from the inventive concept of the present invention, and these all fall within the scope of protection of the present invention.

Claims

1. A high-voltage analog switch circuit, characterized in that, include: The signal processing module is used to convert the received control signal into a pair of logically opposite first and second modulation signals; A carrier generator module is used to generate a first carrier signal and a second carrier signal; A driving module is connected to the signal processing module and the carrier generator module respectively. The driving module is used to modulate the first carrier signal and the second carrier signal according to the first modulation signal and the second modulation signal to generate a first driving signal and a second driving signal respectively. A switch module is connected to the drive module, and the switch module is used to perform a switch switching action according to the first drive signal and the second drive signal.

2. The high-voltage analog switch circuit according to claim 1, characterized in that, The switching module includes: At least one first switch module is connected to the drive module, and the first switch module is used to perform a switch switching action according to the first drive signal and the second drive signal; At least one second switch module is connected to the drive module, the output terminal of the second switch module is connected to the output terminal of the first switch module, and the second switch module is used to perform a switch switching action according to the first drive signal and the second drive signal; The logic of the second switch module is the opposite of that of the first switch module in executing the switch switching action.

3. The high-voltage analog switch circuit according to claim 2, characterized in that, The first switch module includes: A first isolation unit is connected to the driving module. The first isolation unit is used to perform isolation coupling processing on the second driving signal to obtain a second isolation coupling signal. A voltage doubler rectifier unit is connected to the first isolation unit. The voltage doubler rectifier unit is used to perform voltage doubler rectification on the second isolated coupling signal to obtain a voltage doubler rectified signal. The second isolation unit is connected to the driving module. The second isolation unit is used to perform isolation coupling processing on the first driving signal to obtain a first isolation coupling signal. The first switching unit is connected to the voltage doubler rectifier unit and the second isolation unit respectively. The first switching unit is used to perform a switching action according to the voltage doubler rectifier signal and the first isolation coupling signal.

4. The high-voltage analog switch circuit according to claim 3, characterized in that, The first isolation unit is a transformer; and / or The second isolation unit is a transformer.

5. The high-voltage analog switch circuit according to claim 3, characterized in that, The voltage multiplier rectifier unit includes a thirteenth capacitor, a first sub-diode, and a second sub-diode. The first end of the first sub-diode is connected to the second end of the thirteenth capacitor, and the second end of the second sub-diode is connected to the second end of the thirteenth capacitor.

6. The high-voltage analog switch circuit according to claim 3, characterized in that, The first switching unit includes a first MOSFET, a second MOSFET, and a fifth MOSFET. The source of the first MOSFET is connected to the source of the second MOSFET, the gate of the first MOSFET is connected to the gate of the second MOSFET, the drain of the fifth MOSFET is connected to the gate of the first MOSFET, and the source of the fifth MOSFET is connected to the source of the first MOSFET.

7. The high-voltage analog switch circuit according to claim 3, characterized in that, The first switch module and the second switch module have the same circuit composition. The first isolation unit of the second switch module is used to perform isolation coupling processing on the first drive signal to obtain a first isolation coupling signal; the second isolation unit is used to perform isolation coupling processing on the second drive signal to obtain a second isolation coupling signal.

8. The high-voltage analog switch circuit according to any one of claims 1-7, characterized in that, The signal processing module includes a dual-channel high-speed NOT gate circuit, which is used to convert the received control signal into a pair of logically opposite first modulation signal and second modulation signal.

9. The high-voltage analog switch circuit according to any one of claims 1-7, characterized in that, The carrier generator module includes: An active crystal, the active crystal being used to generate a carrier frequency signal; A high-speed NOT gate circuit is connected to the active crystal, and the high-speed NOT gate circuit is used to divide the received carrier frequency signal into a first carrier signal and a second carrier signal.

10. The high-voltage analog switch circuit according to any one of claims 1-7, characterized in that, The driving module includes: The first driving module is connected to the signal processing module and the carrier generator module respectively. The first driving module is used to modulate the first carrier signal according to the first modulation signal to generate the first driving signal. The second driving module is connected to the signal processing module and the carrier generator module respectively. The second driving module is used to modulate the second carrier signal according to the second modulation signal to generate the second driving signal.

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