A radio frequency switching device

Abstract

This disclosure relates to the field of semiconductor technology, and addresses the technical problem of reduced performance despite smaller package size in radio frequency (RF) switching devices. Embodiments of this disclosure provide an RF switching device comprising an active region and a gate structure arranged along a first direction; the gate structure includes a plurality of first gate structures arranged along a second direction and a plurality of second gate structures arranged along a third direction; a first end of each second gate structure is aligned with a first first gate structure, and a second end of each second gate structure is located outside the last first gate structure, away from the first first gate structure; wherein the first direction, the second direction, and the third direction intersect each other. Thus, the RF switching device satisfies the requirement of reduced package size without reduced on-resistance.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a radio frequency switching device. Background Technology

[0002] Radio frequency (RF) switches connect one or more of multiple RF signals through logic control to switch between different signal paths, including switching between receiving and transmitting, and switching between different frequency bands. RF switches include Wi-Fi switches, antenna tuning switches, etc., and are widely used in base station / mobile phone / communication scenarios.

[0003] In existing RF switching devices, taking the single-pole double-throw (SPDT) RF switch as an example, the package size has gradually decreased from 1.1mm*0.7mm to 0.95mm*0.6mm. While the package size has decreased, the performance specifications have not. Therefore, to meet the requirement of the same on-resistance but a smaller chip area, parameterized cells can be redesigned on the RF switching device layout using a well-shaped structure to meet the requirements. Summary of the Invention

[0004] In a first aspect, embodiments of this disclosure provide a radio frequency switching device, the radio frequency switching device including an active region and a gate structure arranged along a first direction; The gate structure includes a plurality of first gate structures arranged along a second direction and a plurality of second gate structures arranged along a third direction. The first end of each second gate structure is aligned with the first first gate structure, and the second end of each second gate structure is located outside the last first gate structure away from the first first gate structure. The first direction, the second direction, and the third direction intersect each other.

[0005] In some embodiments, the first gate structure and the second gate structure are electrically connected to form a whole.

[0006] In some embodiments, for the active region, the portion located below the projection of the gate structure along the first direction is the channel region; The trench area includes a first trench area extending along a second direction and a second trench area extending along a third direction.

[0007] In some embodiments, the portion of the first gate structure located away from the last first gate structure is formed at the end of the first gate structure. The portion of the first gate structure located near the end of the first gate structure forms multiple doped regions.

[0008] In some embodiments, adjacent doped regions are isolated by the first gate structure and / or the second gate structure, and the doped regions form source or drain terminals.

[0009] In some embodiments, the source or drain terminals have a symmetrical structure within the active region.

[0010] In some embodiments, the source or drain terminals of the doped regions are distributed in a source-drain-source cross pattern along the second direction and in a source-drain-source cross pattern along the third direction. Alternatively, the source or drain terminals of the doped region are distributed in a drain-source-drain cross pattern along the second direction and in a drain-source-drain cross pattern along the third direction.

[0011] In some embodiments, the gate structure is a control electrode configured to apply a DC bias to form the channel region.

[0012] In some embodiments, the width of each first channel region is the same as the width of each second channel region; The length of each of the first channel regions is consistent, and the length of each of the second channel regions is consistent.

[0013] In some embodiments, each of the first channel region and each of the second channel regions has a channel resistance.

[0014] In a second aspect, embodiments of this disclosure provide an electronic device that includes at least the radio frequency switching device described in the first aspect.

[0015] This disclosure provides a radio frequency (RF) switching device, which includes an active region and a gate structure arranged along a first direction. The gate structure includes a plurality of first gate structures arranged along a second direction and a plurality of second gate structures arranged along a third direction. A first end of each second gate structure is aligned with a first first gate structure, and a second end of each second gate structure is located outside the last first gate structure, away from the first first gate structure. The first direction, the second direction, and the third direction intersect each other. Here, by dividing the gate structure in the RF switching device into a plurality of first gate structures and a plurality of second gate structures, the layout of the RF switching device presents a well-shaped structure, which can reduce the package size while maintaining almost no change in on-resistance. Attached Figure Description

[0016] Figure 1 A schematic diagram of the layout of a radio frequency switching device provided for related technologies; Figure 2 This is a schematic diagram of a first portion of a layout of a radio frequency switching device provided in an embodiment of this disclosure; Figure 3A schematic diagram of the gate structure connection of a radio frequency switching device provided in an embodiment of this disclosure; Figure 4 This is a second-part layout schematic diagram of a radio frequency switching device provided in an embodiment of the present disclosure; Figure 5 A third part of the layout diagram of a radio frequency switching device provided in this disclosure embodiment. Figure 6 This is a schematic layout diagram of a radio frequency switching device provided in an embodiment of this disclosure; Figure 7 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this disclosure. Detailed Implementation

[0017] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. It is understood that the specific embodiments described herein are only for explaining the relevant disclosure and not for limiting the disclosure. It should also be noted that, for ease of description, only the parts related to the relevant disclosure are shown in the accompanying drawings. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of this disclosure only and is not intended to limit this disclosure. In the following description, references to "some embodiments" describe a subset of all possible embodiments; however, it is understood that "some embodiments" can be the same subset or different subsets of all possible embodiments and can be combined with each other without conflict. It should be noted that the terms "first, second, third, fourth" involved in the embodiments of this disclosure are merely to distinguish similar objects and do not represent a specific ordering of objects. It is understood that "first, second, third, fourth" can be interchanged in a specific order or sequence where permitted, so that the embodiments of this disclosure described herein can be implemented in an order other than that illustrated or described herein.

[0018] For the layout of common RF switching devices 10, please refer to [link / reference]. Figure 1The diagram illustrates a layout of a radio frequency (RF) switching device provided in accordance with the present disclosure. The RF switch is a four-port device comprising: a source, a poly, a drain, and a body. A common RF switching device 10 includes an active region 100 arranged along a first direction and a gate structure 200. The gate structure 200 includes a first gate structure 001 arranged along a second direction and three second gate structures 002 arranged along a third direction. The first end of each second gate structure 002 is aligned with the first gate structure 001, and the second end of the second gate structure 002 is away from the first gate structure 001. The portion of the first gate structure 001 away from the second gate structure 002 forms a body end 003. Multiple doped regions 004 are formed between the second gate structures 002. The doped regions 004 form source ends 005 or drain ends 006. The source ends 005 and drain ends 006 are within the active region 100 and are isolated from each other by the second gate structures 002. The number of first gate structures 001 is 1, the number of second gate structures 002 is 3, and the number of doped regions 004 is 4. The number of source ends 005 formed by the doped regions 004 is 2, and the number of drain ends 006 generated by the doped regions 004 is 2.

[0019] In a common RF switching device 10, when the switch is in the open state, a positive voltage is applied to the gate terminal, generating a channel resistance between the source and drain terminals. According to the layout of a common RF switching device 10, it can be seen that the channel is generated only in the horizontal direction.

[0020] The radio frequency switching device 20 in the embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0021] For some embodiments of this disclosure, please refer to Figure 2 This illustrates a first partial layout schematic of a radio frequency switching device 20 provided in an embodiment of the present disclosure. For example... Figure 2 As shown, the radio frequency switching device 20 includes an active region 100 and a gate structure 200 arranged along a first direction; the gate structure 200 includes a plurality of first gate structures 201 arranged along a second direction and a plurality of second gate structures 202 arranged along a third direction; the first end of each second gate structure 202 is aligned with the first first gate structure 201, and the second end of each second gate structure 202 is located outside the last first gate structure 201 away from the first first gate structure 201; wherein, the first direction, the second direction and the third direction intersect each other.

[0022] It should be noted that the RF switching device 20 connects one or more of the multiple RF signals through logic control to achieve switching between different signal paths, including switching between reception and transmission, and switching between different frequency bands. The active region 100 in the RF switching device 20 is the core area responsible for current conduction and modulation, and is crucial in determining the switch's on-resistance and off-resistance capacitance. The gate structure 200 in the RF switching device 20 acts as a valve controlling the on and off states of the active region 100, controlling the carrier concentration within the channel of the active region 100 by applying a gate voltage.

[0023] It should be further explained that the active region 100 refers to a specific area on the semiconductor substrate that can generate and conduct current, formed by techniques such as epitaxial growth and ion implantation. It is the location of the transistor channel.

[0024] In this embodiment of the present disclosure, the first gate structure 201 and the second gate structure 202 are electrically connected to form a whole. The first gate structure 201 is arranged along a second direction, and the second gate structure 202 is arranged along a third direction, such that gate structures 200 exist in both the horizontal and vertical directions, and the first gate structure 201 and the second gate structure 202 are arranged in a well pattern in the radio frequency switching device 20.

[0025] In one example, such as Figure 3 As shown, the conductive materials in the first gate structure 201 and the second gate structure 202 are connected together.

[0026] For some embodiments of this disclosure, please refer to Figure 4 This illustrates a second portion of a layout schematic of a radio frequency switching device 20 provided in an embodiment of this disclosure. For example... Figure 4 As shown, for the active region, the portion located below the projection of the gate structure 200 along the first direction is the channel region 300; the channel region includes a first channel region 301 extending along the second direction and a second channel region 302 extending along the third direction.

[0027] In this embodiment of the disclosure, the gate structure 200 is a control electrode, configured to apply a DC bias voltage to form a channel region, that is, the gate structure 200 is a control electrode that controls the on / off state of the channel region 300.

[0028] Here, the first channel region 301 extends along the second direction, and the second channel region 302 extends along the third direction, so that there are channel regions 300 in both the horizontal and vertical directions, and the first channel region 301 and the second channel region 302 are distributed in a well pattern in the RF switching device 20.

[0029] It should be noted that the width of each first channel area 301 is the same as the width of each second channel area 302; the length of each first channel area 301 is the same, and the length of each second channel area 302 is the same; the number of first channel areas 301 and the number of second channel areas 302 are not limited here.

[0030] For some embodiments of this disclosure, please refer to Figure 5 This illustrates a third portion of a layout diagram of a radio frequency switching device 20 provided in an embodiment of this disclosure. For example... Figure 5 As shown, the portion of the first gate structure 201 located away from the end of the first gate structure 201 forms a body end 400; the portion of the first gate structure 201 located near the end of the first gate structure 201 forms a plurality of doped regions 500.

[0031] It should be noted that the body terminal 400 can also be arranged around the gate structure to form a structure that fully surrounds the gate structure.

[0032] In this embodiment of the disclosure, adjacent doped regions 500 are isolated by a first gate structure 201 and / or a second gate structure 202. The doped regions 500 form a source end 501 or a drain end 502, and the source end 501 or the drain end 502 has a symmetrical structure within the active region 100.

[0033] It should be noted that the doped region 500 is N-doped to form an NMOS transistor.

[0034] Please refer to some embodiments of this disclosure. Figure 5 The source ends 501 or drain ends 502 of the doped region 500 are distributed in a source-drain-source cross pattern along the second direction and in a source-drain-source cross pattern along the third direction; or, the source ends 501 or drain ends 502 of the doped region 500 are distributed in a drain-source-drain cross pattern along the second direction and in a drain-source-drain cross pattern along the third direction.

[0035] Here, the source end 501 or drain end 502 of the doped region 500 are arranged in a source-drain-source cross distribution along the second direction and the third direction, respectively; or, the source end 501 or drain end 502 of the doped region 500 are arranged in a drain-source-drain cross distribution along the second direction and the third direction, respectively, which can significantly reduce the gate resistance.

[0036] In summary, this disclosure provides a radio frequency switching device 20. For a specific example, please refer to [link to example]. Figure 6The radio frequency switching device 20 includes an active region 100 and a gate structure 200 arranged along a first direction; the gate structure 200 includes a plurality of first gate structures 201 arranged along a second direction and a plurality of second gate structures 202 arranged along a third direction; the first end of each second gate structure 202 is aligned with the first first gate structure 201, and the second end of each second gate structure 202 is located outside the last first gate structure 201 away from the first first gate structure 201; wherein the first direction, the second direction and the third direction intersect each other.

[0037] For the active region 100, the portion located below the projection of the gate structure 200 along the first direction is the channel region 300; the channel region 300 includes a first channel region 301 extending along the second direction and a second channel region 302 extending along the third direction.

[0038] Here, the gate structure 200 is a control electrode, configured to apply a DC bias to form a channel region 300; each first channel region 301 and each second channel region 302 has a channel resistance.

[0039] It should be noted that the first gate structure 201 is arranged along the second direction, and the second gate structure 202 is arranged along the third direction, so that there are gate structures 200 in both the horizontal and vertical directions. The first gate structure 201 and the second gate structure 202 are arranged in a well-shaped distribution in the RF switching device 20; the corresponding first channel region 301 and second channel region 302 are also arranged in a well-shaped distribution in the RF switching device 20.

[0040] It should also be noted that the width of each first channel area 301 is the same as the width of each second channel area 302; the length of each first channel area 301 is the same, and the length of each second channel area 302 is the same.

[0041] A portion of the first gate structure 201 located away from the end of the first gate structure 201 forms a body end 400; a portion of the first gate structure 201 located near the end of the first gate structure 201 forms a plurality of doped regions 500; adjacent doped regions 500 are isolated by the first gate structure 201 and / or the second gate structure 202, and the doped regions 500 form a source end 501 or a drain end 502.

[0042] It should be noted that the doped region 500 is N-doped to form an NMOS transistor.

[0043] Here, the first gate structure 201 and the second gate structure 202 are electrically connected to form a whole, and the source end 501 or drain end 502 formed by the doped region 500 has a symmetrical structure within the active region 100. The source ends 501 or drain ends 502 of the doped region 500 are distributed in a source-drain-source cross pattern along the second direction and in a source-drain-source cross pattern along the third direction; or, the source ends 501 or drain ends 502 of the doped region 500 are distributed in a drain-source-drain cross pattern along the second direction and in a drain-source-drain cross pattern along the third direction.

[0044] Here, in the RF switching circuit, the body terminal 400 is typically not directly connected to the source and grounded, but is biased by an independent control voltage. In this embodiment, since the source terminal 501 or drain terminal 502 of the doped region 500 are distributed in a source-drain-source cross pattern, forming multiple parallel PN junctions, a parasitic JFET effect is caused. Therefore, to avoid the JFET effect, in the layout design, the body terminals of all transistors are connected to a common body terminal bias line, which is uniformly controlled by an external control voltage, resulting in the distribution of the body terminal 400 of the RF switching device 20 in this embodiment.

[0045] Here, the gate structure 200 covers and controls the active region 100, and the core functional part of the active region 100 is the channel region 300. The active region 100 is the entire functional region formed by doping or epitaxy in the RF switching device 20, including the channel region 300 and the source terminal 501 and drain terminal 502 formed by the doped region 500. The gate structure 200 spans the active region 100 along the first direction and is precisely aligned in the area between the source terminal 501 and the drain terminal 502, with the channel region 300 directly below it.

[0046] Specifically, when the RF switch is turned on, when a sufficiently high positive voltage is applied to the gate structure 200, the resulting vertical electric field will attract electrons to the surface of the channel region 300, forming a channel connecting the source end 501 and the drain end 502. This channel will be generated along the second direction and the third direction, and a channel resistance will be generated between the source end 501 and the drain end 502.

[0047] In this embodiment of the disclosure, since channels are generated along both the second and third directions, while in the prior art, RF switching devices only have channels in one direction, the channel resistance in the RF switching device of this embodiment of the disclosure will be greatly reduced when the layout area of ​​the RF switching device is consistent. This can also satisfy the requirement of RF switching devices with smaller package size but no reduction in on-resistance.

[0048] The advantage of this RF switch device 20 lies in that, by arranging the gate structures 200 in the RF switch device 20 along a second direction and a third direction to form a plurality of first gate structures 201 and second gate structures 202, and within the active region 100, there is a channel region 300 below the projection of the gate structures 200 along the first direction. The channel region 300 correspondingly includes a first channel region 301 extending along the second direction and a second channel region 302 extending along the third direction. In the RF switch device 20 of this embodiment, the channel regions 300 exhibit a well-shaped distribution, that is, channels exist in both the horizontal and vertical directions. Each first channel region 301 and each second channel region 302 has a channel resistance, and the channel resistance of the RF switch device 20 is significantly reduced. Compared with common RF switch devices, the RF switch device 20 of this embodiment can meet the requirement of reducing the package size without reducing the on-resistance.

[0049] In yet another embodiment of this application, see Figure 7 This illustrates a structural schematic diagram of the electronic device 30 provided in an embodiment of this application. For example... Figure 7 As shown, the electronic device 30 includes at least the radio frequency switching device 20 described in the foregoing embodiments.

[0050] The above description is merely a preferred embodiment of this disclosure and is not intended to limit the scope of protection of this disclosure.

[0051] It should be noted that, in this disclosure, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0052] The sequence numbers of the embodiments disclosed above are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0053] The methods disclosed in the several method embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new method embodiments.

[0054] The features disclosed in the several product embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new product embodiments.

[0055] The features disclosed in the several method or device embodiments provided in this disclosure can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0056] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A radio frequency switching device, characterized in that, The radio frequency switching device includes an active region and a gate structure arranged along a first direction; The gate structure includes a plurality of first gate structures arranged along a second direction and a plurality of second gate structures arranged along a third direction. The first end of each second gate structure is aligned with the first first gate structure, and the second end of each second gate structure is located outside the last first gate structure away from the first first gate structure. Wherein, the first direction, the second direction, and the third direction intersect each other; The portion of the first gate structure located away from the end of the first gate structure; The body terminal is formed by connecting the body terminals of multiple transistors to a common body terminal bias line; The body terminal is biased by an independent control voltage.

2. The radio frequency switching device according to claim 1, characterized in that, The first gate structure and the second gate structure are electrically connected to form a whole.

3. The radio frequency switching device according to claim 1, characterized in that, For the active region, the portion located below the projection of the gate structure along the first direction is the channel region; The trench area includes a first trench area extending along a second direction and a second trench area extending along a third direction.

4. The radio frequency switching device according to claim 1, characterized in that, The portion of the first gate structure located near the end of the first gate structure forms multiple doped regions.

5. The radio frequency switching device according to claim 4, characterized in that, The adjacent doped regions are isolated by the first gate structure and / or the second gate structure, and the doped regions form source or drain terminals.

6. The radio frequency switching device according to claim 5, characterized in that, The source or drain terminals have a symmetrical structure within the active region.

7. The radio frequency switching device according to claim 5, characterized in that, The source or drain terminals of the doped region are distributed in a source-drain-source cross pattern along the second direction and in a source-drain-source cross pattern along the third direction. Alternatively, the source or drain terminals of the doped region are distributed in a drain-source-drain cross pattern along the second direction and in a drain-source-drain cross pattern along the third direction.

8. The radio frequency switching device according to claim 3, characterized in that, The gate structure is a control electrode, configured to apply a DC bias voltage to form the channel region.

9. The radio frequency switching device according to claim 3, characterized in that, The width of each first channel region is the same as the width of each second channel region; The length of each of the first channel regions is consistent, and the length of each of the second channel regions is consistent.

10. The radio frequency switching device according to claim 9, characterized in that, Each of the first channel region and each of the second channel regions has a channel resistance.

11. An electronic device, characterized in that... Includes the radio frequency switching device according to any one of claims 1 to 10.

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