Purge nozzle, substrate processing apparatus, method for purging substrate container, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: (a) a close contact part which has an opening in the center and is configured so as to be able to come into close contact with a purge interface of a substrate container; (b) a sleeve which is connected to a surface of the close contact part opposite to a surface in close contact with the purge port, and which has a cylindrical part communicating with the opening; (c) a gas pipe which is in clearance fit with the inner circumference of the cylinder part with a first clearance; (d) an interface flange fixedly connected to the gas tube and having a flange surface substantially perpendicular to the tube axis of the gas tube; and (e) an elastic member that is provided between the interface flange and the sleeve and that urges the sleeve in a direction away from the interface flange, (d1) the interface flange has a hole concentric with the gas pipe and having a diameter corresponding to the outer diameter of the cylindrical part, and the outer circumference of the cylindrical part and the hole are clearance-fitted with a second clearance therebetween.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a purge nozzle, a substrate processing apparatus, a purge method of a substrate container, a manufacturing method of a semiconductor device, and a program. BACKGROUND

[0002] In a semiconductor manufacturing apparatus, a substrate that is a processing target is housed in a FOUP (Front Opening Unified Pod) that is a substrate container, and is carried into a placement section. In the FOUP in the apparatus, there is a case where a purge gas is supplied (for example, Patent Literature 1).

[0003] PRIOR ART DOCUMENT

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2015-29057 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] By connecting the purge nozzle to the purge port located at the bottom of the FOUP, the purge gas is supplied to the FOUP, but improvement in close contact property of the purge nozzle is required.

[0008] The present disclosure provides a technology capable of improving close contact property of a purge nozzle.

[0009] MEANS FOR SOLVING THE PROBLEMS

[0010] According to one embodiment of the present disclosure, a technology is provided, which includes:

[0011] (a) a close contact section having an opening in the center and configured to be capable of close contact with a purge port of a substrate container;

[0012] (b) a sleeve connected to a surface opposite to a surface of the close contact section that is in close contact with the purge port, and having a cylindrical section that communicates with the opening;

[0013] (c) a gas tube that is gap-fitted with a first gap to an inner circumference of the cylindrical section;

[0014] (d) a port flange fixedly connected to the gas tube and having a flange surface that is substantially perpendicular to a tube axis of the gas tube; and

[0015] (e) an elastic member provided between the port flange and the sleeve and applying a force to the sleeve in a direction away from the port flange,

[0016] (d1) the interface flange has a hole concentric with the gas pipe and having a diameter corresponding to the outer diameter of the cylindrical portion, and the outer circumference of the cylindrical portion is gap-fitted with the hole with a second gap.

[0017] Effects of Invention

[0018] According to the present disclosure, the close contact property of the purge nozzle can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 A perspective view of a housing chamber suitable for use in an embodiment of the present disclosure.

[0020] Figure 2 A cross-sectional view of a substrate processing apparatus suitable for use in an embodiment of the present disclosure.

[0021] Figure 3 A plan view of a horizontal drive mechanism suitable for use in an embodiment of the present disclosure.

[0022] Figure 4 A rear view of a horizontal drive mechanism suitable for use in an embodiment of the present disclosure.

[0023] Figure 5 A configuration diagram of a purge gas supply system suitable for use in an embodiment of the present disclosure.

[0024] Figure 6 A vertical sectional view of a purge nozzle suitable for use in an embodiment of the present disclosure.

[0025] Figure 7 A schematic configuration diagram of a controller of a substrate processing apparatus suitable for use in an embodiment of the present disclosure.

[0026] Figure 8 A flowchart showing a substrate processing procedure suitable for use in an embodiment of the present disclosure.

[0027] Figure 9 A vertical sectional view of a purge nozzle in a first modification of an embodiment of the present disclosure.

[0028] Figure 10 A vertical sectional view of a purge nozzle in a second modification of an embodiment of the present disclosure.

[0029] Figure 11 A vertical sectional view of a purge nozzle in a third modification of an embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] Hereinafter, regarding one embodiment of the present disclosure, mainly referring to Figures 1-8The present application relates to a substrate processing apparatus. Description of Embodiments

[0031] (1) Configuration of substrate processing apparatus

[0032] As Figure 1 In the present embodiment, the substrate processing apparatus 4 constitutes a vertical processing apparatus (batch-type vertical processing apparatus) that implements a processing step in a manufacturing method of a semiconductor device. Further, in the vertical processing apparatus to which the present disclosure is applicable, a FOUP (hereinafter referred to as a wafer container) 20 is used as a carrier that carries a wafer W as a substrate. The substrate processing apparatus 4 is provided with a processing furnace 8, a housing chamber 12, and a carrying chamber 16, which will be described later.

[0033] (Housing chamber)

[0034] On the inner front side of the housing of the substrate processing apparatus 4, the housing chamber 12 that houses the wafer container 20 carried into the apparatus is provided. On the front side of the housing of the housing chamber 12, an opening, i.e., a carrying-in / out port 22A for carrying the wafer container 20 into and out of the housing chamber 12 is provided so as to communicate the inside and outside of the housing of the housing chamber 12. The carrying-in / out port 22A can also be configured to be opened and closed by a front surface shutter. An AGV interface (I / O table) 22 is provided on the inside of the housing of the carrying-in / out port 22A. On the wall surface between the housing chamber 12 and the carrying chamber 16, a loading interface 42, which will be described later, is provided. The wafer container 20 is carried into the substrate processing apparatus 4 by a processing-in-process carrying apparatus (inter-process carrying apparatus) located outside the substrate processing apparatus 4 on the AGV interface 22, and is carried out from the AGV interface 22.

[0035] Above the AGV interface 22 in the front of the housing of the housing chamber 12, a storage rack (wafer container shelf) 30A, 30B that stores the wafer container 20 is provided in two stages of upper and lower. Also, above the AGV interface 22 in the rear of the housing of the housing chamber 12, a storage rack (wafer container shelf) 30C, 30D that stores the wafer container 20 is provided in two stages of upper and lower. Three wafer containers 20 can be stored in each of the storage racks 30C, 30D, and it can be said that each has three shelves. The three shelves of the storage rack 30C are referred to as storage racks 30C_1, 30C_2, 30C_3. The three shelves of the storage rack 30D are referred to as storage racks 30D_1, 30D_2, 30D_3. In the case where the storage racks 30A, 30B, 30C, 30D are not distinguished, they are referred to as storage racks 30.

[0036] In the same straight line shape as the horizontal direction of the storage rack 30A in the upper stage of the front of the housing, the OHT interfaces 32A, 32B are arranged in left and right. In the case where the OHT interfaces 32A, 32B are not distinguished, they are referred to as OHT interfaces 32. The wafer container 20 is carried onto the OHT interface 32 from above the substrate processing device 4 by an in-process carrier (inter-process carrier) located outside the substrate processing device 4, and is carried out from the OHT interface 32. The AGV interface 22, the storage rack 30, and the OHT interface 32 are configured to be able to move the wafer container 20 horizontally between the placement position and the handover position by the horizontal drive mechanism 26. The details of the horizontal drive mechanism 26 will be described later.

[0037] As Figure 2 As

[0038] The wafer container carrying mechanism 40 that carries the wafer container 20 is provided with a traveling section 40B that travels on the rail mechanism 40A, a holding section 40C that holds the wafer container 20, and a lifting section 40D that lifts the holding section 40C in the vertical direction. By detecting the encoder of the motor that drives the traveling section 40B, the position of the traveling section 40B can be detected, and the traveling section 40B can be moved to an arbitrary position. The wafer container carrying mechanism 40 is configured, for example, by a cable suspension type carrier (hoist).

[0039] A purge gas supply system 23 is provided above the wafer container 20 placed on the AGV interface 22 and below the lower-stage housing rack 30B. Details of the purge gas supply system 23 will be described later.

[0040] (Transfer chamber)

[0041] The transfer chamber 16 is formed adjacent to the rear of the housing chamber 12. On the transfer chamber 16 side of the housing chamber 12, a plurality of wafer transfer-in / out ports 44 for transferring wafers W in and out of the transfer chamber 16 are provided in a horizontal direction, and a loading interface 42A, 42B is provided at each wafer transfer-in / out port 44. The loading interface 42A, 42B horizontally moves a placement table 43A, 43B on which the wafer container 20 is placed to push against the wafer transfer-in / out port 44 and expand the lid of the wafer container 20. When the lid of the wafer container 20 is expanded, the wafer W is transferred in and out of the wafer container 20 by a substrate transfer robot 86. The loading interface 42 is referred to without distinguishing the loading interfaces 42A, 42B. The placement table 43 is referred to without distinguishing the placement tables 43A, 43B.

[0042] (Process furnace)

[0043] A process furnace 8 is provided above the transfer chamber 16. The process furnace 8 has a reaction tube 50 that constitutes a reaction vessel (process vessel). The reaction tube 50 is formed of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), for example, and has a cylindrical shape with an upper end closed and a lower end open. In the cylindrical hollow portion of the reaction tube 50, a process chamber 54 is formed. The process chamber 54 is configured to be capable of housing wafers W in a state where the wafers W are aligned in a vertical direction in a plurality of stages in a horizontal posture by a wafer boat 58 described later.

[0044] A seal cap 78 that is a furnace mouth cap body capable of airtightly closing the lower end opening of the reaction tube 50 is provided below the reaction tube 50. The seal cap 78 is formed of a metal such as SUS or stainless material, for example, and is a disc-shaped member. The seal cap 78 is configured to abut against the lower end of the reaction tube 50 from the vertical direction lower side.

[0045] The wafer boat 58 that is a substrate support member is configured to support a plurality of wafers W, for example, 25 to 200 pieces, in a horizontal posture and in a state where the wafers W are aligned in a vertical direction in a plurality of layers, that is, in a state where the wafers W are aligned with intervals. The wafer boat 58 is formed of a heat-resistant material such as quartz or SiC, for example.

[0046] A rotation mechanism 80 that rotates the wafer boat 58 is provided on the opposite side of the seal cap 78 from the process chamber 54. A rotation shaft 80A of the rotation mechanism 80 penetrates the seal cap 78 and is connected to the wafer boat 58. The rotation mechanism 80 is configured to rotate the wafers W by rotating the wafer boat 58.

[0047] Next, the horizontal drive mechanism 26 of the storage rack 30, the AGV interface 22, and the OHT interface 32 according to the present embodiment will be described with reference to FIG. 6. As shown in FIG. 6, the horizontal drive mechanism 26 is provided on the base 24 and can be configured to horizontally move a stage 25 on which the wafer container 20 is placed. Figure 3 Figure 4 Figure 3 As shown in FIG. 6, the horizontal drive mechanism 26 is provided on the base 24 and can be configured to horizontally move a stage 25 on which the wafer container 20 is placed.

[0048] The base 24 is configured using a fixed plate 24A, an adjustment plate 24B, a fixed screw 24C, and an adjustment screw 24D. The fixed plate 24A and the adjustment plate 24B are connected by a plurality of adjusters. The adjuster is configured by the fixed screw 24C, which is a fastening member that fixes the fixed plate 24A and the adjustment plate 24B, and the two adjustment screws 24D, which are horizontal adjustment members provided at positions opposite the fixed screw 24C. By adjusting the locking state of the adjustment screw 24D, the level of the stage 25 can be adjusted.

[0049] As shown in FIG. 6, the horizontal drive mechanism 26 is provided on the base 24 and can be configured to horizontally move a stage 25 on which the wafer container 20 is placed. Figure 3 As shown in FIG. 6, the horizontal drive mechanism 26 is provided on the base 24 and can be configured to horizontally move a stage 25 on which the wafer container 20 is placed. Figure 4 As shown in FIG. 6, the horizontal drive mechanism 26 is provided on the base 24 and can be configured to horizontally move a stage 25 on which the wafer container 20 is placed.

[0050] ​​The transmission portion 26C is formed in a ring-like belt member and is supported by a pulley. The transmission portion 26C and the connecting portion 26E are fixed by a block-like second fixing portion, and the transmission portion 26C and the adjustment plate 24B are fixed by a block-like third fixing portion (not shown). The third fixing portion is fixed to the adjustment plate 24B, so that the transmission portion 26C can be rotated when the guide portion 26B is moved. By rotating the transmission portion 26C, the stage 25 fixed to the connecting portion 26E can be horizontally moved. By this configuration, the horizontal movement of the stage 25 by the guide portion 26B and the horizontal movement of the stage 25 by the transmission portion 26C can be simultaneously performed. Further, since the stage 25 can be horizontally moved in two stages, the rod 26F of the first driving portion 26A does not need to be elongated, and space saving can be achieved.

[0051] On the outer side portion of the guide portion 26B on the adjustment plate 24B, two sensors 28A and 28B are provided. The sensors 28A and 28B are formed, for example, by light sensors. The two sensors 28A and 28B are provided to detect the positions of the placement position and the handover position of the stage 25, respectively. On the rear end of the guide portion 26B on the side where the sensor 28B is provided, a thin plate-like detection member 28C for detection of the sensor 28B is attached. This detection member 28C is detected by the detection portion of the sensor 28B, so that the position of the stage 25 is detected. By adjusting the position of the sensor 28B, the stage 25 can be driven with an arbitrary stroke, and the controllability can be improved. On the end portion of the guide portion 26D on the side where the detection member 28C is not attached, a stopper 27 is attached.

[0052] On the stage 25, a sensor 25B for detecting whether the wafer container 20 is placed is provided. The sensor 25B is formed, for example, by a light sensor. When the wafer container 20 is placed, a pin is pressed by the bottom surface of the wafer container 20, and the pressed pin is detected by the detection portion of the sensor 25B, so that it is detected that the wafer container 20 is placed. Further, on the stage 25, an opening portion 25A is formed on the front end side, and the stage 25 can be carried as a handle when maintenance is performed. By this configuration, the maintainability can be improved.

[0053] On the front of the housing, the upper-stage housing racks 30A and the OHT interfaces 32A and 32B are provided on one elongated base 24 and can be independently driven, respectively. Further, on the rear of the housing, the housing racks 30C and 30D are provided on one elongated base 24 and can be independently driven, respectively. On each of the elongated bases 24, three stages 25 can be independently driven.

[0054] In each of the storage racks 30 and the OHT interface 32, a purge mechanism that purges ambient gas in the wafer container 20 and reduces the oxygen concentration in the wafer container 20 is provided. The purge mechanism can also be provided in the AGV interface 22.

[0055] Regarding the purge mechanism, a purge nozzle 410 that is connected to the purge interface 21 of the wafer container 20 and a gas exhaust nozzle 510 that is connected to the purge interface 21 are provided in each of the stages 25. Figure 5 The stages 30A, 30B, 30C_1 to 30C_3, 30D_1 to 30D_3, and the OHT interfaces 32A, 32B are each provided with a stage 25. In each of the stages 25, a purge nozzle 410 that is connectable to the purge interface 21 of the wafer container 20 and a gas exhaust nozzle 510 that is connectable to the purge interface 21 are provided. In the purge nozzle 410, a gas supply pipe 411 is connected. In the gas supply pipe 411, a gas filter 413 and a flow control device 412 are provided. The flow control device 412 is configured to be controllable in flow by a controller 210 described later. The flow control device 412 is configured with a valve 412a and a mass flow controller (MFC) 412b. In the gas exhaust nozzle 510, a gas exhaust pipe 511 is connected. Further, in the gas exhaust pipe 511, a pressure sensor 513 and a safety valve (bleed valve) 514 are connected.

[0056] The gas filter 413 connected to the gas supply pipe 411 and the pressure sensor 513 and the safety valve 514 connected to the gas exhaust pipe 511 are provided in each of the stages 25. Further, the flow control devices 412 connected to the respective gas supply pipes 411 are integrated and provided in a purge gas supply system 23 provided in front of the housing. Thereby, the operability can be easily improved and the workability of maintenance can be improved. The purge gas supply system 23 is an integrated gas supply system that is connected to at least one of the plurality of purge nozzles 410 and supplies gas. Further, the controller 210 receives information on the type of the wafer container 20 that has been loaded from a higher-level device, and controls the integrated gas supply system to supply gas from the purge interface corresponding to the type of the wafer container 20 that has been loaded on the stage 25.

[0057] When the wafer container 20 is loaded on the stage 25 of any one of the storage racks 30A, 30B, 30C, 30D and the OHT interfaces 32A, 32B, a sensor 25B provided above the stage 25 detects that the wafer container 20 has been loaded. When the controller 210 receives a signal from the sensor 25B, the corresponding valve 412a of the purge gas supply system 23 is set to be open. Thereby, from a gas source not shown, purge gas is supplied to the wafer container 20 via the gas filter 413, the gas supply pipe 411, and the purge nozzle 410, and from the gas exhaust nozzle 510, the purge gas is exhausted via the gas exhaust pipe 511. The purge gas is a non-reactive gas, and for example, nitrogen (N2) gas can be used.

[0058] Regarding the configuration of the purge nozzle 410, a purge nozzle 410 that is connected to the purge interface 21 of the wafer container 20 and a gas exhaust nozzle 510 that is connected to the purge interface 21 are provided in each of the stages 25.Figure 6 The purge nozzle 410 is provided in the mounting hole 25C (see FIG. 2) that penetrates the stage 25 in the up-down direction. Figure 3 The purge nozzle 410 includes a pipe portion 420, a sleeve 430, a gasket 440 as a close contact portion, a ring 450, an interface flange 460, and a spring 470 as an elastic member.

[0059] The pipe portion 420 has a cylindrical gas pipe 422 provided with a flow path, and a joint portion 424 provided with a flow path that is continuous with the flow path of the gas pipe 422. The gas pipe 422 is inserted in the sleeve 430. The joint portion 424 is disposed on the lower side than the stage 25, and is connected to the gas supply pipe 411. Thus, the flow path of the pipe portion 420 is continuous with the flow path of the gas supply pipe 411, and purge gas flows through the pipe portion 420. The gas supply pipe 411 is fixed to the back surface of the stage 25 by using a fixing member or the like, and thus the pipe portion 420 is fixed to the stage 25. The front end (upper end) of the gas pipe 422 is disposed at a position that does not protrude more than the upper surface of the stage 25. The gas supply pipe 411 is composed of a SUS pipe or a PTFE pipe. Further, the pipe portion 420 can be a part of the gas supply pipe 411, for example.

[0060] The sleeve 430 has a main body portion 432. On the inner side of the main body portion 432, a cylindrical portion (plunger) 433 having a through hole is provided. The gas pipe 422 of the pipe portion 420 is inserted in the through hole of the cylindrical portion 433. The sleeve 430 is movable in the up-down direction along the gas pipe 422 in a manner that the gas pipe 422 is inserted in the cylindrical portion 433. A first gap G1 is provided between the inner surface of the cylindrical portion 433 and the outer surface of the gas pipe 422. In other words, the gas pipe 422 is gap-fitted with the inner circumference of the cylindrical portion 433 with the first gap G1. The sliding surface of the cylindrical portion 433 with the gas pipe 422 is formed of resin, and is formed in a smooth cylindrical shape. Due to the low sliding resistance of the resin, the sleeve 430 is smoothly movable up and down. The length of the sliding direction of the sliding surface is 1.5 times or more the diameter of the gas pipe 422. Thus, the electric conductance of the first gap G1 can be reduced. One end (upper end) of the gas pipe 422 is disposed at a position that does not protrude from the sleeve 430 when the sleeve 430 is pressed in by an external force. No gasket is provided between the cylindrical portion 433 and the gas pipe 422.

[0061] On the lower surface of the main body portion 432, a ring-shaped groove 435 is provided which surrounds the cylindrical portion 433 as viewed in the up-down direction. The upper portion of the spring 470 is arranged in the groove 435. On the upper end portion of the cylindrical portion 433, a flange portion (flange) 436 is provided which protrudes to the outside. In other words, the cylindrical portion 433 extends within the opening 441 of the gasket 440, and has the flange portion 436 at the front end. The through-hole of the cylindrical portion 433 communicates with the opening 441. Between the lower surface of the flange portion 436 and the upper surface of the main body portion 432, the gasket 440 is fitted. In other words, the gasket 440 is fixed by the step 442 and the flange portion 436 being engaged with each other. On the lower end portion of the main body portion 432, a flange portion 437 is provided which protrudes to the outside. The outer diameter of the flange portion 437 is smaller than the inner diameter of the ring 450 described later, and a third gap G3 is formed.

[0062] The gasket 440 is formed in a ring shape which surrounds the cylindrical portion 433 as viewed in the up-down direction. The gasket 440 has a thickness in the tube axis direction which is smaller than the difference between the outer circumference and the inner circumference. The gasket 440 has an opening 441 in the center, and the side surface of the opening 441 has a step 442. The gasket 440 is fixed to the main body portion 432 in such a manner that the step 442 of the inner surface lower end portion is engaged in the flange portion 436. The opposite surface (lower surface) of the surface of the gasket 440 which is in close contact with the purge port 21 is connected to the cylindrical portion 433. The upper surface of the gasket 440 is in close contact with the purge port 21 provided on the bottom surface of the wafer container 20 when the wafer container 20 is placed on the stage 25 (refer to FIG. 2). Figure 5 ) Thus, the gas pipe 422 communicates with the wafer container 20 via the inside of the gasket 440 and the main body portion 432, and purge gas can be supplied to the inside of the wafer container 20.

[0063] Since the gasket 440 repeatedly contacts the wafer container 20, it is preferable that the gasket 440 have high durability. Also, it is preferable that the gasket 440 not easily adhere to the purge port 21 of the wafer container 20. Furthermore, in order to maintain the cleanliness within the wafer container 20, it is preferable that the gasket 440 have a small amount of outgassing. The gasket 440 is formed of rubber or resin which can satisfy the above requirements. Here, the gasket 440 is formed of fluorine rubber.

[0064] The ring 450 has a main body portion 451 and a cylindrical portion 452. The main body portion 451 is a ring-shaped fixing member which has a through-hole 453 in the center. The cylindrical portion 452 is configured to extend from the upper end portion of the inner surface side of the main body portion 451 to the upper side, and has a through-hole 453 in the center. On the upper end portion of the cylindrical portion 452, a regulation portion 454 is provided which extends to the inside. The sleeve 430 is provided in the through-hole 453.

[0065] The interface flange 460 has a main body portion 461 and a flange portion 462. The main body portion 461 is a ring-shaped fixing member having a through-hole 463 in the center thereof. The through-hole 463 is fixed by welding or the like in a state in which the gas tube 422 is inserted. In other words, the interface flange 460 is connected so as to be fixed to each other with the gas tube. The flange portion 462 has a flange surface that is substantially perpendicular to the tube axis of the gas tube 422. The main body portion 461 has a hole 464 that has a diameter corresponding to the outer diameter of the cylindrical portion 433 concentrically with the gas tube 422, and the outer circumference of the cylindrical portion 433 is gap-fitted with the hole 464 with a second gap G2.

[0066] Between the ring 450 and the interface flange 460, the flange portion 437 of the sleeve 430 is disposed. Thereby, the position of the sleeve 430 in the vertical direction is limited between an upper position at which the flange portion 437 abuts against the lower surface of the regulation portion 454 of the ring 450 and a lower position at which the flange portion 437 abuts against the upper surface of the interface flange 460. In other words, the ring 450 is fixed to the flange surface of the interface flange 460, and is regulated by the regulation portion 454 so that the sleeve 430 does not move away from the interface flange 460 by a predetermined distance or more. Further, the ring 450 is fixed by a screw that is inserted through the lower surface of the flange surface of the interface flange 460. The sleeve 430 is located at the upper position when the wafer container 20 is not placed on the stage 25, and is located between the upper position and the lower position when the wafer container 20 is placed on the stage 25. In other words, the gasket 440 can be pressed into a position that does not protrude from the upper surface of the stage 25. Also, the gas tube 422 can be pressed into a position that does not protrude from the upper surface of the stage 25. By these, even if the sealing surface of the purge interface 21 and the upper surface of the stage 25 are the same surface, the wafer container 20 can be placed and closely contacted to the purge nozzle 410.

[0067] The side surface of the sleeve 430 is gap-fitted with the inner circumferential surface of the ring 450 with a third gap G3. Since the first gap Gl, the second gap G2, and the third gap G3 are provided, the sleeve 430 is able to slide. Further, the third gap G3 is provided more outward than the first gap Gl and the second gap G2, and the diameter of the third gap G3 is, for example, about 4 times larger than the diameter of the first gap Gl and the diameter of the second gap G2. For example, in a case where the gaps of the first gap Gl, the second gap G2, and the third gap G3 are the same, the flow path sectional area of the third gap G3 is larger than the total of the flow path sectional areas of the first gap Gl and the second gap G2. In other words, the electric conductance of the third gap G3 is larger than the combined electric conductance of the first gap Gl and the second gap G2. Thus, when the sleeve 430 is pressed in, the gas that is shut off below the sleeve 430 is released to the outside from the third gap G3. Thus, the sliding of the sleeve 430 becomes easy. Further, in a case where the sliding of the sleeve 430 is performed not in the first gap Gl but in the second gap G2 or the third gap G3, the first gap Gl is set to be larger than the second gap G2 and the third gap G3.

[0068] In the inner side region of the spring 470, the inserted cylinder portion 433 is inserted. The upper end portion of the spring 470 is arranged in the groove 435 of the sleeve 430. The lower end portion of the spring 470 abuts against the interface flange 460. The spring 470 is in a compressed state by the sleeve 430 and the interface flange 460. Thus, the spring 470 exerts a force on the sleeve 430 in the up-and-down direction to the wafer container 20 side (upper side). In other words, the spring 470 exerts a force on the sleeve 430 in the direction away from the interface flange 460.

[0069] The exhaust nozzle 510 has the same configuration as the purge nozzle 410. The exhaust nozzle 510 is connected to a gas exhaust pipe 511 in place of the gas supply pipe 411, and exhausts the purge gas from the wafer container 20. The gas exhaust pipe 511 is configured with a pipe fitting.

[0070] An operation when the wafer container 20 is placed on the stage 25 will be described. When the wafer container 20 is brought close to the stage 25, first, the gasket 440 of the purge nozzle 410 contacts the purge interface 21 of the wafer container 20. More specifically, the gasket 440 contacts the peripheral portion of the opening that configures the purge interface 21. Next, the gasket 440 is kept in close contact with the purge interface 21 by the force exerted by the spring 470, and the gasket 440 is depressed by the wafer container 20. When the wafer container 20 is brought closer to the stage 25, the wafer container 20 is placed on the stage 25 in a state where the purge interface 21 is in close contact with the gasket 440. In this way, the spring 470 functions as a position adjustment portion that adjusts the position of the gasket 440 in the up-and-down direction.

[0071] Furthermore, the positional relationship between the purge port 21 and the purge nozzle 410 can change depending on the type of wafer container 20. For example, the sealing surface of the purge port 21 may vary in height by several millimeters depending on the wafer container manufacturer. Even in this case, as long as the purge port 21 of the wafer container 20 is in contact with the gasket 440 in the purge nozzle 410, the force applied by the spring 470 can maintain a tight contact between the purge port 21 and the gasket 440. Then, as the gasket 440 is pressed down by the wafer container 20, the position of the gasket 440 in the vertical direction can be automatically adjusted. Thus, even if the positional relationship between the purge port 21 and the purge nozzle 410 of the wafer container 20 changes, purge gas can be reliably supplied to the interior of the wafer container 20.

[0072] like Figure 4 As shown, the controller 210 of the control unit (control means) is configured as a computer equipped with a CPU (Central Processing Unit) 212, RAM (Random Access Memory) 214, storage device 216, and I / O interface 218. The RAM 214, storage device 216, and I / O interface 218 are configured to exchange data with the CPU 212 via an internal bus 220. An input / output device 222, configured as, for example, a touch panel, is connected to the controller 210.

[0073] Storage device 216 is constructed using, for example, flash memory or HDD (Hard Disk Drive). Storage device 216 stores control programs that control the operation of the substrate processing apparatus, or process recipes that describe the steps or conditions of the substrate processing described later, and these recipes can be read. The process recipes function as programs, designed to cause controller 210 to execute each step of the substrate processing process described later, and to obtain a predetermined result. Hereinafter, the process recipes or control programs will be simply referred to as programs. When the term "program" is used in this specification, it may include only the process recipe, only the control program, or both. RAM 214 serves as a storage area (working area) for temporarily storing programs or data read by CPU 212.

[0074] I / O interface 218 is connected to the aforementioned MFC412b, valve 412a, pressure sensor 513, substrate transfer machine 86, rotation mechanism 80, wafer box elevator 82, wafer container handling mechanism 40, sensors 25B, 28A, 28B, horizontal drive mechanism 26, etc.

[0075] CPU 212 is configured to read and execute control programs from storage device 216, and to read process recipes from storage device 216 in response to input of operation instructions from input / output device 222. CPU 212 is configured to control the wafer transfer operation performed by substrate transfer machine 86, the rotation and rotation speed adjustment operation of wafer cassette 58 performed by rotation mechanism 80, the lifting operation of wafer cassette 58 performed by wafer cassette elevator 82, the wafer container handling operation performed by wafer container transport mechanism 40, and the driving operation of horizontal drive mechanism 26 based on sensors 25B, 28A, and 28B, in accordance with the content of the read process recipe. CPU 212 is further configured to control the flow rate adjustment operation of purge gas based on pressure sensor 513 MFC412b, and the opening and closing operation of valve 412a based on sensor 25B, etc.

[0076] The controller 210 can be configured to install the aforementioned program stored in an external storage device (e.g., magnetic disks such as magnetic tapes, floppy disks, or hard disks; optical discs such as CDs or DVDs; optical magnetic disks such as MOs; semiconductor memory such as USB memory or memory cards) 224 onto a computer. The storage device 216 or the external storage device 224 constitutes a computer-readable recording medium. Hereinafter, these will be collectively referred to simply as recording media. When the term "recording media" is used in this specification, it may include only the storage device 216, only the external storage device 224, or both. Furthermore, the program can be provided to the computer without using the external storage device 224, but using communication means such as the Internet and dedicated lines.

[0077] (2) Substrate processing process

[0078] This section provides an overview of the substrate processing steps using the substrate processing apparatus 4, which is a semiconductor manufacturing apparatus, to process substrates. This substrate processing step is, for example, a step used in manufacturing semiconductor devices. Furthermore, in the following description, the operation or processing of each component constituting the substrate processing apparatus 4 is controlled by the controller 210.

[0079] [Substrate handling process: S10]

[0080] (Move into loading interface: S101)

[0081] like Figure 1 and Figure 2 As shown, when the wafer container 20 is supplied to the AGV interface 22 or the OHT interface 32, the wafer container 20 on the AGV interface 22 or the OHT interface 32 is moved into the loading stage 43 of the loading interface 42 by the wafer container handling mechanism 40.

[0082] (Wafer count: S102)

[0083] The wafer loading / unloading port 44 of the loading interface 42 is closed by the cap attachment / detachment mechanism, and clean air is circulated and filled in the transfer chamber 16.

[0084] The wafer container 20 placed on the placement table 43 of the loading interface 42 has its open side end face pushed by the open edge portion of the wafer loading / unloading port 44, and its cap is detached by the cap attachment / detachment mechanism, and the wafer outlet is opened. Thereafter, the wafer count in the wafer container 20 or the state of the wafer W is checked by the wafer count device. After the wafer count is calculated, the cap is closed by the cap attachment / detachment mechanism.

[0085] (Rack purging: S103)

[0086] Thereafter, the wafer container 20 is transferred and placed on the storage rack 30. The wafer container 20 placed on the storage rack 30 is purged. The purging can be continuously performed during the placement, or can be intermittently performed at any time. Further, the wafer container 20 can be repeatedly transferred from the AGV interface 22 or the OHT interface 32 to the storage rack 30 only several times as many as the number of wafer containers that can be placed on the storage rack 30.

[0087] (Wafer filling into a wafer cassette: S104)

[0088] The wafer container 20, which is to be subjected to film formation, among the plurality of wafer containers 20 placed on the storage rack 30, is transferred from the storage rack 30 to the loading interface 42, and is transferred onto the placement table 43 of the loading interface 42. The wafer container 20 placed on the placement table 43 has its open side end face pushed by the open edge portion of the wafer loading / unloading port 44, and its cap is detached by the cap attachment / detachment mechanism, and the wafer outlet is opened. When the wafer container 20 is opened, the substrate transfer robot 86 picks up the wafer W from the wafer container 20 through the wafer outlet, and after the wafer W is aligned in the circumferential direction by the notch matching device, the wafer W is filled (packed) into the wafer cassette 58. The substrate transfer robot 86, which has filled the wafer W into the wafer cassette 58, returns to the wafer container 20, and fills the next wafer W into the wafer cassette 58.

[0089] While the wafer W is being loaded into the cassettes 58 from one of the load lock chambers 42 (load lock chamber 42A or load lock chamber 42B) by the substrate transfer robot 86, the other of the load lock chambers 42 (load lock chamber 42B or load lock chamber 42A) is opened, and another wafer container 20 is carried from the storage rack 30 by the wafer container transfer mechanism 40. Then, simultaneously with the loading of the wafer W, the wafer container 20 is opened in the load lock chamber 42. The empty wafer container 20 is carried from the load lock chamber 42 to the storage rack 30 and placed in the storage rack 30. The empty wafer container 20 placed in the storage rack 30 can be subjected to the above-described purge. Thus, the wafer W is loaded into the cassettes 58.

[0090] When the number of wafers W specified in advance is loaded into the cassettes 58, the lower end of the processing chamber 54 is opened. Then, the lid 78 is raised by the cassette elevator 82 (see FIG. 2), and the cassettes 58 holding the wafers W are carried into the processing chamber 54 (cassette loading). Figure 7 ) by the cassette elevator 82 (see FIG. 2), and the cassettes 58 holding the wafers W are carried into the processing chamber 54 (cassette loading).

[0091] (Forming step: Sll)

[0092] Then, a film is formed on the surface of the wafer W by supplying a processing gas to the wafer W in the processing chamber 54.

[0093] (Substrate carrying-out step: S12)

[0094] Then, the cassettes 58 holding the wafers W on which the film has been formed are carried out of the processing chamber 54.

[0095] According to the present embodiment, one or more of the following effects can be obtained.

[0096] (a) By providing the first gap Gl and the second gap G2, the dust generated by the up-and-down movement of the sleeve 430 can be reduced.

[0097] (b) By providing the first gap Gl and the second gap G2, the length of the flow path is increased and the electric conductance is reduced, so that the leakage of the gas from the gas pipe 422 to the periphery can be suppressed doubly.

[0098] (c) Since the thickness of the gasket 440 is made thin, the gasket 440 is difficult to be turned over when a lateral force is applied to the gasket 440, and the peeling of the gasket 440 or the leakage caused thereby can be suppressed.

[0099] (d) By reducing the gaps and increasing the number, the electric conductance can be reduced, so that by designing the gaps as three, the first gap Gl, the second gap G2, and the third gap G3, the leakage can be further suppressed. In other words, the leakage of the gas is triplely suppressed by the first gap Gl, the second gap G2, and the third gap G3.

[0100] (e) Since the leakage of the gas is suppressed, the amount of use of N2 as the purge gas can be reduced. For example, the amount of use of N2 gas in the case where the gas leakage mechanism of (b) or (c) above is not provided is 18 SLM, and in contrast, the amount of use in the present embodiment is 8 SLM or more and 10 SLM or less.

[0101] (f) Since the sleeve 430 slides with respect to the gas pipe 422, not the gasket 440 or the O-ring which are large in friction, the operation becomes smooth and the tight contact with the purge port 21 is improved.

[0102] (g) Since the pressing force is maintained by the spring 470 and the movable range of the purge nozzle 410 is increased, various wafer containers 20 whose heights of the sealing surfaces on the back surfaces are different can be dealt with.

[0103] The embodiments of the present disclosure are specifically described above, but the present disclosure is not limited to the above-described embodiments, and various changes can be made without departing from the gist thereof.

[0104] Regarding the configuration of the purge nozzle of the modified example, the configuration of the purge nozzle of the above-described embodiment is used Figures 9-11 and is described.

[0105] The purge nozzle of the above-described embodiment is not provided with a sealing member such as a gasket. As Figure 9 shown in the first modified example, a gasket (for example, an O-ring 480) is provided between the side surface of the flange portion 437 of the sleeve 430 and the inner circumference of the cylindrical portion 452 of the ring 450.

[0106] The O-ring 480 disposed in the groove 438 formed in the flange portion 437 of the sleeve 430 is compressed by the cylindrical portion 452 of the ring 450 and the flange portion 437 of the sleeve 430 and is in tight contact with the cylindrical portion 452 and the flange portion 437. That is, the O-ring 480 plugs the gap between the ring 450 and the sleeve 430 in the through hole 453. Thus, the third gap G3 between the cylindrical portion 452 and the flange portion 437 is plugged, and the leakage of the purge gas from the third gap G3 can be suppressed. In the present modified example, the same effects as those of the above-described embodiment are also obtained.

[0107] As Figure 10 shown in the second modified example, a gasket (for example, an O-ring 490) is provided between the cylindrical portion 433 of the sleeve 430 and the gas pipe 422.

[0108] An O-ring 490 disposed within a groove 436a formed on the inner surface of the cylinder 433 is compressed by the gas pipe 422 and the cylinder 433, making tight contact with both. That is, the O-ring 490 blocks the gap between the piping section 420 and the sleeve 430. Thus, by blocking the first gap G1 between the gas pipe 422 and the cylinder 433, leakage of purge gas from the first gap G1 can be suppressed. In this modified example, the same effect as in the embodiment described above is obtained.

[0109] like Figure 11 As shown, in the third modification, compared to the purge nozzle 410 of the embodiment, the structure of the gasket 440 is changed, and a bellows 500 is added to seal between the sleeve 430 and the interface flange 460. A large-diameter spring 470 is arranged around the outer periphery of the bellows 500. The gasket 440 has a groove (thin portion) 443, which has elasticity perpendicular to the surface in the surface that abuts the purge interface 21, and its size decreases at the periphery compared to the center. This suppresses purge gas leakage. In this modification, the same effect as in the embodiment described above is obtained.

[0110] The above-described embodiments or variations can be used in combination. The processing order and conditions can, for example, be the same as those in the above-described methods or variations.

[0111] In the above embodiments, a batch substrate processing apparatus (vertical apparatus) that processes multiple substrates at a time has been described as an example. This disclosure is not limited to the above-described manner, and can also be appropriately applied to single-wafer and multi-wafer apparatuses equipped with an IBR (Internal Buffer Rack), as well as apparatuses that process substrates with cleaning liquids, etc.

[0112] [Symbol Explanation]

[0113] 410: Purge nozzle

[0114] 422: Gas tube

[0115] 430: Sleeve

[0116] 433: Cylinder section

[0117] 440: Pad (Close Contact Area)

[0118] 441: Opening

[0119] 460: Interface flange

[0120] 464: Kong

[0121] 470: Spring (elastic component)

[0122] G1 : 1st gap

[0123] G2: 2nd gap

Claims

1. A purging nozzle, characterized in that, have: (a) A tight contact portion having an opening in the center and configured to make tight contact with the purge interface of the substrate housing; (b) A sleeve connected to the opposite side of the surface of the aforementioned tight contact portion that is in close contact with the aforementioned purge interface, and having a cylindrical portion that communicates with the aforementioned opening; (c) A gas tube that is fitted with the inner circumference of the aforementioned cylindrical portion with a first gap; (d) An interface flange, which is fixedly connected to the gas tube and has a flange surface substantially perpendicular to the axis of the gas tube; and (e) An elastic member disposed between the interface flange and the sleeve, which applies force to the sleeve in a direction away from the interface flange. (d1) The aforementioned interface flange has a hole concentric with the aforementioned gas pipe and with a diameter corresponding to the outer diameter of the aforementioned cylindrical portion, and the outer circumference of the aforementioned cylindrical portion is fitted with the aforementioned hole with a second gap.

2. The purging nozzle according to claim 1, characterized in that, The aforementioned tight contact portion is formed in a ring shape and has a thickness smaller than the difference between the outer circumference and the inner circumference.

3. The purging nozzle according to claim 1, characterized in that, The side of the opening of the aforementioned tight contact portion has a step, the cylindrical portion extends within the opening and has a flange at the front end, and the tight contact portion is fixed by the engagement of the step with the flange.

4. The purging nozzle according to claim 1, characterized in that, (f) It also includes a ring that is fixed to the flange surface and restricts the sleeve from moving away from the interface flange by a specified distance.

5. The purging nozzle according to claim 4, characterized in that, The side of the sleeve and the inner circumferential surface of the ring are fitted together with a third gap, and gas leakage is triple-suppressed through the first gap to the third gap.

6. The purging nozzle according to claim 5, characterized in that, The first gap is set to be larger than the second and third gaps.

7. The purging nozzle according to claim 1, characterized in that, One end of the gas tube is located inside the cylinder and is positioned so that it does not protrude from the sleeve when the sleeve is pressed in by external force.

8. The purging nozzle according to claim 1, characterized in that, The sliding surface of the aforementioned cylindrical section and the aforementioned gas tube is made of resin and is formed into a smooth cylindrical shape.

9. The purging nozzle according to claim 1, characterized in that, No sealing ring is provided between the aforementioned cylinder and the aforementioned gas pipe.

10. The purging nozzle according to claim 4, characterized in that, A sealing ring is provided between the aforementioned cylindrical portion and the aforementioned gas pipe, or between the side of the aforementioned sleeve and the inner circumference of the aforementioned ring.

11. The purging nozzle according to claim 8, characterized in that, The length of the sliding surface in the sliding direction is more than 1.5 times the diameter of the gas tube.

12. The purging nozzle according to claim 1, characterized in that, The aforementioned tight contact portion has a groove that functions such that the elasticity in the direction perpendicular to the surface in the surface that abuts the aforementioned purging interface is smaller at the periphery than at the center.

13. A substrate processing apparatus using the purge nozzle of claim 1, characterized in that, have: (g) A plurality of mounting plates on which the aforementioned substrate receiving container is mounted; (h) the aforementioned purging nozzles, which are disposed on each of the aforementioned mounting plates; and An integrated gas supply system is connected to at least one of the aforementioned purge nozzles and supplies gas.

14. The substrate processing apparatus according to claim 13, characterized in that, The substrate receiving container is placed on the aforementioned mounting plate by a cable-suspended receiving container transporter.

15. The substrate processing apparatus according to claim 13, characterized in that, The front end of the gas tube does not protrude beyond the mounting plate, and the tight contact portion is configured to be pressed into a position that does not protrude from the mounting plate.

16. The substrate processing apparatus according to claim 13, characterized in that, (i) It also includes a control unit configured to receive information about the type of the substrate container that has been placed from a host device and to control the integrated gas supply system by supplying gas from the purge interface corresponding to the type of the substrate container that has been placed on the mounting plate.

17. A method for purging a substrate receiving container, which is a substrate processing apparatus comprising a purging nozzle, a plurality of mounting plates, an integrated gas supply system, and a control unit. The aforementioned purge nozzle comprises: (a) a tight contact portion having an opening in the center and configured to make tight contact with the purge interface of the substrate receiver; (b) a sleeve connected to the opposite side of the tight contact portion that makes tight contact with the purge interface, and having a cylindrical portion communicating with the opening; (c) a gas tube that is fitted with the inner circumference of the cylindrical portion with a first gap; (d) an interface flange fixedly connected to the gas tube and having a flange surface substantially perpendicular to the tube axis of the gas tube; and (e) an elastic member disposed between the interface flange and the sleeve, which applies force to the sleeve in a direction away from the interface flange; (d1) the interface flange having a hole concentric with the gas tube and having a diameter corresponding to the outer diameter of the cylindrical portion, and the outer circumference of the cylindrical portion being fitted with the hole with a second gap. (g) The aforementioned plurality of mounting plates hold the aforementioned substrate receiving container. (h) The integrated gas supply system supplies gas to at least one of the purge nozzles disposed on each of the aforementioned mounting plates. (i) The control unit is configured to receive information about the type of the substrate container that has been placed from the host device, and to control the integrated gas supply system by supplying gas from the purge interface corresponding to the type of the substrate container placed on the mounting plate. The above-mentioned substrate receiving container purging method is characterized in that, The substrate receiving container is placed on the aforementioned mounting plate; and The substrate receiving container is purged using the aforementioned purging nozzle.

18. A method for manufacturing a semiconductor device, characterized in that, include: The process of placing a substrate container on a substrate processing apparatus; as well as The process of purging the substrate housing via a purge nozzle, The aforementioned substrate processing apparatus includes the aforementioned purge nozzle, multiple aforementioned mounting plates, an integrated gas supply system, and a control unit. The aforementioned purge nozzle comprises: (a) a tight contact portion having an opening in the center and configured to make tight contact with the purge interface of the aforementioned substrate housing; (b) a sleeve connected to the opposite side of the tight contact portion that makes tight contact with the purge interface, and having a cylindrical portion communicating with the opening; (c) a gas tube that is fitted with the inner circumference of the cylindrical portion with a first gap; (d) an interface flange fixedly connected to the gas tube and having a flange surface substantially perpendicular to the tube axis of the gas tube; and (e) an elastic member disposed between the interface flange and the sleeve, which applies force to the sleeve in a direction away from the interface flange; (d1) the interface flange having a hole concentric with the gas tube and having a diameter corresponding to the outer diameter of the cylindrical portion, and the outer circumference of the cylindrical portion being fitted with the hole with a second gap. (g) The substrate receiving container is placed on one or more of the above-mentioned mounting plates. (h) The integrated gas supply system supplies gas to at least one of the purge nozzles disposed on each of the aforementioned mounting plates. (i) The control unit is configured to receive information about the type of the substrate container that has been placed from the host device and control the integrated gas supply system by supplying gas from the purge interface corresponding to the type of the substrate container that has been placed on the mounting plate.

19. A program that causes a substrate processing apparatus to perform the following steps via a computer, characterized in that, include: The step of placing a substrate receiving container on a mounting plate of a substrate processing apparatus; as well as The step of blowing the above-mentioned substrate receiving container through a blow nozzle, The aforementioned substrate processing apparatus includes the aforementioned purge nozzle, multiple aforementioned mounting plates, an integrated gas supply system, and a control unit. The aforementioned purge nozzle comprises: (a) a tight contact portion having an opening in the center and configured to make tight contact with the purge interface of the aforementioned substrate housing; (b) a sleeve connected to the opposite side of the tight contact portion that makes tight contact with the purge interface, and having a cylindrical portion communicating with the opening; (c) a gas tube that is fitted with the inner circumference of the cylindrical portion with a first gap; (d) an interface flange fixedly connected to the gas tube and having a flange surface substantially perpendicular to the tube axis of the gas tube; and (e) an elastic member disposed between the interface flange and the sleeve, which applies force to the sleeve in a direction away from the interface flange; (d1) the interface flange having a hole concentric with the gas tube and having a diameter corresponding to the outer diameter of the cylindrical portion, and the outer circumference of the cylindrical portion being fitted with the hole with a second gap. (g) The substrate receiving container is placed on one or more of the above-mentioned mounting plates. (h) The integrated gas supply system supplies gas to at least one of the purge nozzles disposed on each of the aforementioned mounting plates. (i) The control unit is configured to receive information about the type of the substrate container that has been placed from the host device and control the integrated gas supply system by supplying gas from the purge interface corresponding to the type of the substrate container that has been placed on the mounting plate.

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