High-frequency circuit, high-frequency module, and amplification method

Abstract

The high-frequency circuit (6) is provided with: a power amplifier (71) connected to the antenna (3) and configured to amplify the millimeter wave signal; a power amplifier (72) connected to an antenna (4) different from the antenna (3) and configured to amplify the millimeter wave signal; a voltage generation circuit (60) configured so as to generate a plurality of discrete voltages on the basis of an input voltage; a power supply modulation circuit (31) configured to selectively output one of the plurality of discrete voltages to the power amplifier (71); and a power supply modulation circuit (32) configured to selectively output one of the plurality of discrete voltages to the power amplifier (72), the power supply modulation circuit (31) and the power supply modulation circuit (32) being configured to select the same voltage from the plurality of discrete voltages in accordance with the first digital control signal.

Description

TECHNICAL FIELD

[0001] The present application relates to a high-frequency circuit, a high-frequency module, and an amplification method. BACKGROUND

[0002] In recent years, by applying an envelope tracking (ET) mode to a power amplification circuit, improvement of power added efficiency has been realized. A tracker circuit for digital envelope tracking (D-ET) is disclosed in Patent Literature 1.

[0003] Patent Literature 1: U.S. Patent No. 8829993

[0004] It is desired to realize a small high-frequency circuit in which power added efficiency is improved by a plurality of power amplifiers capable of amplifying millimeter wave signals. SUMMARY

[0005] Therefore, the present application provides a small high-frequency circuit in which power added efficiency is improved by a plurality of power amplifiers capable of amplifying millimeter wave signals, a high-frequency module, and an amplification method capable of contributing to the miniaturization of the high-frequency circuit and the high-frequency module.

[0006] The high-frequency circuit of one embodiment of the present application includes a first power amplifier connected to a first antenna and configured to amplify millimeter wave signals; a second power amplifier connected to a second antenna different from the first antenna and configured to amplify millimeter wave signals; a voltage generation circuit configured to generate a plurality of discrete voltages based on an input voltage; a first power supply modulation circuit configured to selectively output one voltage of the plurality of discrete voltages to the first power amplifier; and a second power supply modulation circuit configured to selectively output one voltage of the plurality of discrete voltages to the second power amplifier, the first power supply modulation circuit and the second power supply modulation circuit being configured to select the same voltage from the plurality of discrete voltages according to a first digital control signal.

[0007] The high-frequency module of one embodiment of the present application includes a module substrate, and a first integrated circuit and a second integrated circuit provided over the module substrate. The first integrated circuit includes a first external connection terminal and a second external connection terminal, a third external connection terminal that receives a first digital control signal, a first switch portion including at least one switch included in a voltage generation circuit configured to generate a plurality of discrete voltages based on an input voltage, a second switch portion including at least one switch included in a first power supply modulation circuit configured to select one voltage from the plurality of discrete voltages and output to the first external connection terminal, a third switch portion including at least one switch included in a second power supply modulation circuit configured to select the same voltage from the plurality of discrete voltages and output to the second external connection terminal, and a digital control portion configured to control the second switch portion and the third switch portion in accordance with the first digital control signal. The second integrated circuit includes a fourth external connection terminal connected to the first external connection terminal, a fifth external connection terminal connected to the second external connection terminal, a first power amplifier configured to amplify a millimeter wave signal using a voltage received from the first integrated circuit through the fourth external connection terminal and connected to a first antenna, and a second power amplifier configured to amplify a millimeter wave signal using a voltage received from the first integrated circuit through the fifth external connection terminal and connected to a second antenna different from the first antenna.

[0008] The amplification method of one embodiment of the present application generates a plurality of discrete voltages based on an input voltage, generates a digital control signal based on an envelope signal of a millimeter wave signal, a first power supply modulation circuit selects one voltage from the plurality of discrete voltages based on the digital control signal and supplies the voltage to a first power amplifier, the first power amplifier amplifies the millimeter wave signal and outputs to a first antenna, a second power supply modulation circuit selects the same voltage from the plurality of discrete voltages based on the digital control signal and supplies the voltage to a second power amplifier, and the second power amplifier amplifies the millimeter wave signal and outputs to a second antenna.

[0009] According to the present application, power addition efficiency can be improved by a plurality of power amplifiers that can amplify a millimeter wave signal, and contribution to the miniaturization of a high-frequency circuit can be made. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1A is a graph showing an example of the change of a power supply voltage in an APT (Average Power Tracking) mode.

[0011] Figure 1B is a graph showing an example of the change of a power supply voltage in an A-ET (Analog Envelope Tracking) mode.

[0012] Figure 1C is a graph showing an example of the transition of the power supply voltage in the D-ET mode.

[0013] Figure 2 is a circuit configuration diagram of the communication device of Embodiment 1.

[0014] Figure 3 is a circuit configuration diagram of the tracker circuit of Embodiment 1.

[0015] Figure 4 is a plan view of the high-frequency module of Embodiment 1.

[0016] Figure 5 is a sectional view of the high-frequency module of Embodiment 1.

[0017] Figure 6 is a flowchart showing the amplification method of Embodiment 1.

[0018] Figure 7A is a circuit configuration diagram of the first voltage adjustment circuit of Embodiment 2.

[0019] Figure 7B is a circuit configuration diagram of the second voltage adjustment circuit of Embodiment 2.

[0020] Figure 8 is a plan view of the high-frequency module of Embodiment 3.

[0021] Figure 9 is a plan view of the high-frequency module of Embodiment 3.

[0022] Figure 10 is a sectional view of the high-frequency module of Embodiment 3. DETAILED DESCRIPTION

[0023] Hereinafter, the embodiments of the present application will be described in detail using the accompanying drawings. Furthermore, the embodiments described below show general or specific examples. The numerical values, shapes, materials, constituent elements, arrangement of constituent elements, and connection modes shown in the following embodiments are one example, and do not limit the present application.

[0024] Furthermore, each drawing is a schematic view in which emphasis, omission, or adjustment of ratio has been appropriately made in order to show the present application, and is not necessarily strictly illustrated. In each drawing, the same reference numeral is sometimes attached to substantially the same structure, and repeated explanation is omitted or simplified.

[0025] In the following drawings, the x-axis and the y-axis are axes orthogonal to each other in a plane parallel to the main surface of the module substrate. Specifically, in the case where the module substrate has a rectangular shape when viewed from above, the x-axis is parallel to a first side of the module substrate, and the y-axis is parallel to a second side of the module substrate orthogonal to the first side. In addition, the z-axis is an axis perpendicular to the main surface of the module substrate, the positive direction of which indicates the upward direction, and the negative direction of which indicates the downward direction.

[0026] In the following description, "connection" includes not only the case where connection is made directly through connection terminals and / or wiring conductors, but also the case where connection is made electrically via other circuit elements. "Direct connection" means connection made directly through connection terminals and / or wiring conductors without passing through other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and means that C is arranged in series on a path connecting A and B. "Path connecting A and B" means a path constituted by a conductor electrically connecting A and B.

[0027] "Terminal" means a point at which a conductor within an element ends. In addition, in the case where the impedance of a conductor between elements is sufficiently low, a terminal can be interpreted not only as a single point, but also as an arbitrary point on the conductor or the entire conductor between elements.

[0028] "Component is arranged on a substrate" includes the case where the component is arranged on the main surface of the substrate, and the case where the component is arranged inside the substrate. "Component is arranged on the main surface of the substrate" includes not only the case where the component is arranged in contact with the main surface of the substrate, but also the case where the component is arranged above the main surface without being in contact with the main surface (for example, the case where the component is layered on another component arranged in contact with the main surface). In addition, "component is arranged on the main surface of the substrate" can include the case where the component is arranged in a recess formed in the main surface. "Component is arranged inside the substrate" includes not only the case where the component is encapsulated inside the module substrate, but also the case where a part of the component is not covered by the substrate although the entire component is arranged between the two main surfaces of the substrate, and the case where only a part of the component is arranged inside the substrate.

[0029] "B is closer to A than C" means that the distance between A and B is shorter than the distance between A and C. Here, "the distance between A and B" means the shortest distance between A and B. In other words, "the distance between A and B" means the length of the shortest line segment among a plurality of line segments connecting an arbitrary point on the surface of A and an arbitrary point on the surface of B.

[0030] "Parallel" and "perpendicular" and the like, which indicate the relationship between elements, and "rectangular" and the like, which indicate the shape of an element, and numerical ranges do not mean strict meanings, but also include substantially equivalent ranges, such as an error of several % or so.

[0031] Here, before the description of the embodiments, a tracking mode as a technique of efficiently amplifying a high-frequency signal is described. In the tracking mode, a power supply voltage that is dynamically adjusted based on a high-frequency signal over time is supplied to a power amplifier. There are several kinds of tracking modes, however, here, a description is made with reference to Figures 1A-1C APT mode, A-ET mode, and D-ET mode are described. In Figures 1A-1C the graph, the horizontal axis represents time, and the vertical axis represents voltage. In addition, the thick solid line represents a power supply voltage, and the thin solid line (waveform) represents a modulation signal.

[0032] Figure 1A is a graph showing one example of the progress of the power supply voltage in the APT mode. The APT mode refers to a mode in which the power supply voltage is varied in a plurality of discrete voltage levels in a frame unit based on an average power.

[0033] A frame refers to a unit that constitutes a high-frequency signal (modulation wave). For example, in 5G NR (5th Generation New Radio) and LTE (Long Term Evolution), a frame contains ten subframes, each subframe contains a plurality of slots, and each slot is constituted by a plurality of symbols. The subframe length is 1 ms, and the frame length is 10 ms.

[0034] In addition, a mode in which the voltage level is varied in a frame unit or a unit larger than a frame based on an average power is referred to as an APT mode, and is distinguished from a mode in which the voltage level is varied in a unit smaller than a frame (for example, a subframe, a slot, or a symbol unit).

[0035] Figure 1B is a graph showing one example of the progress of the power supply voltage in the A-ET mode. The A-ET mode refers to a mode in which the power supply voltage is continuously varied based on an envelope signal. In the A-ET mode, the power supply voltage can track the envelope line of the modulation signal.

[0036] An envelope signal is a signal that represents the envelope line of the modulation signal. The envelope value is represented by, for example, the square root of (I 2 + Q 2 ). Here, (I, Q) represents a constellation point. The constellation point refers to a point that represents a digitally modulated signal on a constellation graph. (I, Q) is determined, for example, by a BBIC (Baseband Integrated Circuit) based on transmission information.

[0037] Figure 1Cis a chart showing an example of the transition of the power supply voltage in the D-ET mode. The D-ET mode refers to a mode in which the power supply voltage is varied to a plurality of discrete voltage levels within one frame based on the envelope signal. In the D-ET mode, the power supply voltage is able to track the envelope line of the modulation signal. In the D-ET, the power supply voltage is varied at a shorter time interval than the APT.

[0038] (Embodiment 1)

[0039] Hereinafter, Embodiment 1 will be described. The communication device 5 of the present embodiment is able to be used in order to provide wireless connection. For example, the communication device 5 can be installed in a user terminal (UE: User Equipment) in a cellular network (also referred to as a mobile network) such as a mobile phone, a smartphone, a tablet computer, a wearable device, and the like. In other examples, by installing the communication device 5, it is possible to provide wireless connection to an IoT (Internet of Things) sensor device, a medical / healthcare device, a car, an unmanned aerial vehicle (UAV: Unmanned Aerial Vehicle) (so-called drone), an automated guided vehicle (AGV: Automated Guided Vehicle). In other examples, by installing the communication device 5, it is also possible to provide wireless connection through a wireless access point or a wireless hotspot.

[0040] The communication device 5 is used to transmit a millimeter wave signal. The millimeter wave signal refers to a signal of a frequency band included in the range of 30 GHz to 300 GHz. In the communication device 5, a plurality of antennas are used to transmit a millimeter wave signal in order to achieve beamforming or beam steering, and the like.

[0041] [1.1 Circuit structure of the communication device 5]

[0042] Referring to Figure 2 The circuit structure of the communication device 5 of the present embodiment will be described. Figure 2 is a circuit block diagram of the communication device 5 of the present embodiment.

[0043] In addition, Figure 2 For the example circuit structure, the communication device 5 can be installed using any one of a variety of circuit installation and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted restrictively.

[0044] The communication device 5 of the present embodiment is provided with a high-frequency circuit 6 including a tracker circuit 1 and an RFIC (Radio Frequency Integrated Circuit) 2, and antennas 3 and 4. In addition, the communication device 5 can not include the antennas 3 and / or 4.

[0045] The tracker circuit 1 is capable of supplying power supply voltages (Vccl and Vcc2) to the power amplifiers 71 and 72 included in the RFIC 2 at the same time. The power supply voltages (Vccl and Vcc2) are selected from a plurality of discrete voltages based on envelope signals of millimeter wave signals amplified by the power amplifiers 71 and 72. The power supply voltages (Vccl and Vcc2) are supplied to the power amplifiers 71 and 72 using Figure 3 The circuit structure of the tracker circuit 1 will be described later.

[0046] The RFIC 2 is capable of amplifying a millimeter wave signal (RFin) that is an input transmission signal of a millimeter wave band and outputting to the antennas 3 and 4. The RFIC 2 can also further amplify a millimeter wave signal (RFout) that is an input reception signal of a millimeter wave band from the antennas 3 and 4 and output. The RFIC 2 is also capable of generating a first digital control signal and a second digital control signal for controlling the tracker circuit 1. The circuit structure of the RFIC 2 will be described later.

[0047] The antennas 3 and 4 are one example of a first antenna and a second antenna that are different from each other, and are capable of transmitting a millimeter wave signal supplied from the RFIC 2 to the outside. In addition, the antennas 3 and 4 can also supply a millimeter wave signal received from the outside to the RFIC 2. Furthermore, the communication device 5 can also have one or more antennas in addition to the antennas 3 and 4. The same millimeter wave signal of the same frequency band is transmitted from the antennas 3 and 4. At this time, the phases and / or polarization directions of the two millimeter wave signals transmitted from the antennas 3 and 4 can also be different.

[0048] [1.2 Circuit structure of RFIC 2]

[0049] Next, the circuit structure of the RFIC 2 included in the communication device 5 will be described with reference to FIG. 2. Figure 2 The circuit structure of the RFIC 2 included in the communication device 5 will be described with reference to FIG. 2. The RFIC 2 has power amplifiers 71 and 72, low noise amplifiers 73 and 74, external connection terminals 75 and 76, switch circuits 77 and 78, and phase shift circuits 79 to 82.

[0050] The power amplifier 71 is one example of a first power amplifier, and is connected to the antenna 3. Specifically, the input terminal of the power amplifier 71 is connected to the phase shift circuit 79, and the output terminal of the power amplifier 71 is connected to the antenna 3 via the switch circuit 77. The power amplifier 71 is also connected to the tracker circuit 1 via the external connection terminal 75. The power amplifier 71 is capable of amplifying a transmission signal of a millimeter wave band supplied via the phase shift circuit 79 using the power supply voltage (Vccl) supplied from the tracker circuit 1.

[0051] The power amplifier 72 is an example of a second power amplifier, and is connected to the antenna 4. Specifically, the input terminal of the power amplifier 72 is connected to the phase shifter circuit 81, and the output terminal of the power amplifier 72 is connected to the antenna 4 via the switch circuit 78. The power amplifier 72 is also connected to the tracker circuit 1 via the external connection terminal 76. The power amplifier 72 is able to amplify the millimeter-wave band transmission signal supplied via the phase shifter circuit 81 using the power supply voltage (Vcc2) supplied from the tracker circuit 1.

[0052] The low noise amplifier 73 is connected to the antenna 3. Specifically, the input terminal of the low noise amplifier 73 is connected to the antenna 3 via the switch circuit 77, and the output terminal of the low noise amplifier 73 is connected to the phase shifter circuit 80. The low noise amplifier 73 is able to amplify the millimeter-wave band reception signal received via the antenna 3. Furthermore, the low noise amplifier 73 can also not be included in the RFIC 2.

[0053] The low noise amplifier 74 is connected to the antenna 4. Specifically, the input terminal of the low noise amplifier 74 is connected to the antenna 4 via the switch circuit 78, and the output terminal of the low noise amplifier 74 is connected to the phase shifter circuit 82. The low noise amplifier 74 is able to amplify the millimeter-wave band reception signal received via the antenna 4. Furthermore, the low noise amplifier 74 can also not be included in the RFIC 2.

[0054] The external connection terminals 75 and 76 are examples of fourth and fifth external connection terminals, and are voltage input terminals for accepting the power supply voltages (Vcc1 and Vcc2) from the tracker circuit 1, respectively. The external connection terminals 75 and 76 are externally connected to the external connection terminals 61 and 62 of the tracker circuit 1, respectively, and are internally connected to the power amplifiers 71 and 72, respectively.

[0055] The switch circuit 77 is connected between the antenna 3 and the power amplifier 71 and the low noise amplifier 73. The switch circuit 77 is composed of a SPDT (Single-Pole Double-Throw) switch circuit, and is able to switch the connection of the antenna 3 between the power amplifier 71 and the low noise amplifier 73.

[0056] The switch circuit 78 is connected between the antenna 4 and the power amplifier 72 and the low noise amplifier 74. The switch circuit 78 is composed of a SPDT switch circuit, and is able to switch the connection of the antenna 4 between the power amplifier 72 and the low noise amplifier 74.

[0057] The phase shift circuits 79 and 81 are connected to the inputs of the power amplifiers 71 and 72, respectively, and are capable of adjusting the phase of the millimeter wave signal (RFin). The phase shift circuits 80 and 82 are connected to the outputs of the low noise amplifiers 73 and 74, respectively, and are capable of adjusting the phase of the millimeter wave signal (RFout). Furthermore, the phase shift circuits 79 to 82 can not be included in the RFIC 2.

[0058] [1.3 Circuit configuration of the tracker circuit 1]

[0059] Next, the circuit configuration of the tracker circuit 1 included in the communication device 5 will be described with reference to Figure 3 The circuit configuration of the tracker circuit 1 included in the communication device 5 will be described with reference to Figure 3 is a circuit configuration diagram of the tracker circuit 1 of the present embodiment.

[0060] Furthermore, Figure 3 is an example of the circuit configuration, and the tracker circuit 1 can be installed using any of a variety of circuit mounting and circuit technologies. Therefore, the following description of the tracker circuit 1 should not be interpreted restrictively.

[0061] The tracker circuit 1 includes a voltage generation circuit 60 including a pre-regulator circuit 10 and a switched capacitor circuit 20, power modulation circuits 31 and 32, voltage adjustment circuits 41 and 42, a digital control circuit 50, and external connection terminals 61 to 64. Furthermore, the tracker circuit 1 can not include the pre-regulator circuit 10.

[0062] The pre-regulator circuit 10 is also referred to as a magnetic regulator or a DC (Direct Current) / DC converter. In the present embodiment, the pre-regulator circuit 10 is a single-input single-output step-down-step-up converter, and is capable of converting an input voltage (Vbat) into an output voltage (adjustment voltage). The pre-regulator circuit 10 is capable of adjusting the output voltage, for example, based on a second digital control signal from the RFIC 2. The adjustment voltage is supplied to the switched capacitor circuit 20. Furthermore, the pre-regulator circuit 10 can be a step-down converter or a step-up converter.

[0063] The switched capacitor circuit 20 is capable of generating a plurality of discrete voltages based on the adjustment voltage supplied from the pre-regulator circuit 10. The plurality of generated discrete voltages are supplied to the power modulation circuits 31 and 32.

[0064] The voltage generation circuit 60 includes the pre-regulator circuit 10 and the switched capacitor circuit 20, and is capable of generating a plurality of discrete voltages based on the input voltage (Vbat). Furthermore, the voltage generation circuit 60 can be any circuit configuration as long as it is capable of generating a plurality of discrete voltages based on the input voltage (Vbat), and is not limited to Figure 3The circuit structure of the voltage generation circuit 60 is not limited to the above-described example. For example, the voltage generation circuit 60 can also include a plurality of pre-regulator circuits 10, and can also not include the switched capacitor circuit 20.

[0065] The power supply modulation circuit 31 is capable of selectively outputting at least one voltage of a plurality of discrete voltages generated by the switched capacitor circuit 20 to the external connection terminal 61. In other words, the power supply modulation circuit 31 is capable of selecting at least one voltage from among the plurality of discrete voltages, and supplying the selected voltage to the power amplifier 71.

[0066] The power supply modulation circuit 32 is capable of selectively outputting at least one voltage of a plurality of discrete voltages generated by the switched capacitor circuit 20 to the external connection terminal 62. In other words, the power supply modulation circuit 32 is capable of selecting at least one voltage from among the plurality of discrete voltages, and supplying the selected voltage to the power amplifier 72.

[0067] The voltage adjustment circuit 41 is connected between the power supply modulation circuit 31 and the external connection terminal 61. The voltage adjustment circuit 41 is capable of adjusting the level of the power supply voltage (Vccl) supplied to the power amplifier 71. Furthermore, the voltage adjustment circuit 41 can also not be included in the tracker circuit 1.

[0068] The voltage adjustment circuit 42 is connected between the power supply modulation circuit 32 and the external connection terminal 62. The voltage adjustment circuit 42 is capable of adjusting the level of the power supply voltage (Vcc2) supplied to the power amplifier 72. Furthermore, the voltage adjustment circuit 42 can also not be included in the tracker circuit 1.

[0069] The external connection terminal 61 is an example of a first external connection terminal, and is a voltage output terminal for supplying a power supply voltage (Vccl) to the power amplifier 71. The external connection terminal 61 is externally connected to the external connection terminal 75 of the RFIC 2, and is internally connected to the power supply modulation circuit 31 via the voltage adjustment circuit 41.

[0070] The external connection terminal 62 is an example of a second external connection terminal, and is a voltage output terminal for supplying a power supply voltage (Vcc2) to the power amplifier 72. The external connection terminal 62 is externally connected to the external connection terminal 76 of the RFIC 2, and is internally connected to the power supply modulation circuit 32 via the voltage adjustment circuit 42.

[0071] The external connection terminal 63 is an example of a third external connection terminal, and is a control input terminal for accepting a first digital control signal from the RFIC 2. As the first digital control signal, a digital control line (DCL) signal based on a parallel data transmission standard is used, but is not limited thereto.

[0072] The DCL signal includes a plurality of bit signals generated based on an envelope signal of the millimeter wave signal (RFin) amplified by the RFIC 2. The plurality of bit signals are independently input to the plurality of external connection terminals 63. A plurality of discrete voltages (V1 to V4) generated by the switched capacitor circuit 20 are respectively represented by a combination of two bit signals. For example, the plurality of discrete voltages (V1 to V4) are respectively represented as "00", "01", "10", and "11". Further, the representation of the voltage levels can also use a gray code.

[0073] The external connection terminal 64 is an example of a sixth external connection terminal, and is a control input terminal for accepting a second digital control signal from the RFIC 2. As the second digital control signal, a digital control signal based on a serial data transmission standard is used, but is not limited thereto.

[0074] In the present embodiment, as the digital control signal based on the serial data transmission standard, a digital control signal of a source synchronous system (a clock signal (CLK) and a data signal (DATA)) is used. Further, a digital control signal of a clock-embedded system can also be used as the digital control signal based on the serial data transmission standard.

[0075] The digital control circuit 50 can control the pre-regulator circuit 10, the switched capacitor circuit 20, the power modulation circuits 31 and 32, and the voltage adjustment circuits 41 and 42 based on the digital control signal from the RFIC 2. Further, the digital control circuit 50 can also not be included in the tracker circuit 1.

[0076] Further, the circuit structure of the tracker circuit 1 is an example, and is not limited thereto. For example, the tracker circuit 1 can also be provided with a pulse shaping network (PSN) connected between the power modulation circuit 31 and the external connection terminal 61, and / or connected between the power modulation circuit 32 and the external connection terminal 62.

[0077] [1.3.1 Circuit structure of the pre-regulator circuit 10]

[0078] Next, the detailed circuit structure of the pre-regulator circuit 10 included in the tracker circuit 1 will be described with reference to FIG. 4. Figure 3 The detailed circuit structure of the pre-regulator circuit 10 included in the tracker circuit 1 will be described with reference to FIG. 4.

[0079] The input terminal T11 is a terminal for accepting an input voltage (Vbat). The input terminal T11 is externally connected to, for example, a direct-current power supply, and is internally connected to the switch S11.

[0080] The output terminal T12 is a terminal for supplying the regulated voltage to the switched capacitor circuit 20. The output terminal T12 is externally connected to the input terminal T20 of the switched capacitor circuit 20 and is internally connected to the switch S13.

[0081] The power inductor L11 is an inductor used for step-up and step-down of the input voltage (Vbat). One end of the power inductor L11 is connected to the switches S11 and S12, and the other end of the power inductor L11 is connected to the switches S13 and S14.

[0082] The switch S11 is connected between the input terminal T11 and one end of the power inductor L11. In this connection structure, the switch S11 can switch the connection and non-connection between the input terminal T11 and one end of the power inductor L11 by switching the on and off.

[0083] The switch S12 is connected between one end of the power inductor L11 and the ground. In this connection structure, the switch S12 can switch the connection and non-connection between one end of the power inductor L11 and the ground by switching the on and off.

[0084] The switch S13 is connected between the other end of the power inductor L11 and the output terminal T12. In this connection structure, the switch S13 can switch the connection and non-connection between the other end of the power inductor L11 and the output terminal T12 by switching the on and off.

[0085] The switch S14 is connected between the other end of the power inductor L11 and the ground. In this connection structure, the switch S14 can switch the connection and non-connection between the other end of the power inductor L11 and the ground by switching the on and off.

[0086] The capacitor C11 is connected between the path between the switch S13 and the output terminal T12 and the ground. Specifically, one of the two electrodes of the capacitor C11 is connected to the switch S13 and the output terminal T12, and the other of the two electrodes of the capacitor C11 is connected to the ground.

[0087] Further, Figure 3 The structure of the pre-regulator circuit 10 shown is an example and is not limited thereto. For example, a part of the switches S11 to S14 can be replaced with diodes. In addition, a part or the whole of the pre-regulator circuit 10 can not be included in the tracker circuit 1.

[0088] [1.3.2 Circuit structure of switched capacitor circuit 20]

[0089] Next, the detailed circuit structure of the switched capacitor circuit 20 included in the tracker circuit 1 will be described with reference to Figure 3 The detailed circuit structure of the switched capacitor circuit 20 included in the tracker circuit 1 will be described. The switched capacitor circuit 20 is a circuit for converting the input voltage (Vbat) into a predetermined voltage (Vout) and outputting the voltage.

[0090] The switched capacitor circuit 20 has a ladder circuit structure, and is capable of generating a plurality of discrete voltages (V1 to V4). Specifically, the switched capacitor circuit 20 includes capacitors C20 to C29, switches S20 to S2F, an input terminal T20, and output terminals T21 to T24. Energy and charge are input from the pre-regulator circuit 10 to a node N3 via the input terminal T20, and are led out to the power supply modulation circuits 31 and 32 from the nodes N1 to N4 via the output terminals T21 to T24.

[0091] The input terminal T20 is a terminal for accepting a regulated voltage from the pre-regulator circuit 10. The input terminal T20 is externally connected to the pre-regulator circuit 10, and is internally connected to the node N3. Note that the node to which the input terminal T20 is connected is not limited to the node N3. The input terminal T20 can be connected to any one of the nodes N1 to N4.

[0092] The output terminal T21 is a terminal for supplying a voltage (V1) of the plurality of discrete voltages (V1 to V4) to the power supply modulation circuits 31 and 32. The output terminal T21 is externally connected to the power supply modulation circuits 31 and 32, and is internally connected to the node N1.

[0093] The output terminal T22 is a terminal for supplying a voltage (V2) of the plurality of discrete voltages (V1 to V4) to the power supply modulation circuits 31 and 32. The output terminal T22 is externally connected to the power supply modulation circuits 31 and 32, and is internally connected to the node N2.

[0094] The output terminal T23 is a terminal for supplying a voltage (V3) of the plurality of discrete voltages (V1 to V4) to the power supply modulation circuits 31 and 32. The output terminal T23 is externally connected to the power supply modulation circuits 31 and 32, and is internally connected to the node N3.

[0095] The output terminal T24 is a terminal for supplying a voltage (V4) of the plurality of discrete voltages (V1 to V4) to the power supply modulation circuits 31 and 32. The output terminal T24 is externally connected to the power supply modulation circuits 31 and 32, and is internally connected to the node N4.

[0096] Capacitors C20 to C25 are flying capacitors (also called cross-over capacitors) used to step up and step down the adjustment voltage (V3) supplied from the pre-regulator circuit 10. More specifically, the capacitors C20 to C25 move charges between the capacitors C20 to C25 and the nodes N1 to N4 and ground, so as to maintain V1 to V4 ground that satisfies (V4 - V3) : (V3 - V2) : (V2 - VI) : (VI - VG) = 1 : 1 : 1 : 1 and V4 > V3 > V2 > VI > VG in the four nodes N1 to N4. VG denotes a ground potential.

[0097] One of the two electrodes of the capacitor C20 is connected to one end of the switch S20 and one end of the switch S21. The other of the two electrodes of the capacitor C20 is connected to one end of the switch S24 and one end of the switch S25.

[0098] One of the two electrodes of the capacitor C21 is connected to one end of the switch S22 and one end of the switch S23. The other of the two electrodes of the capacitor C21 is connected to one end of the switch S26 and one end of the switch S27.

[0099] One of the two electrodes of the capacitor C22 is connected to one end of the switch S24 and one end of the switch S25. The other of the two electrodes of the capacitor C22 is connected to one end of the switch S28 and one end of the switch S29.

[0100] One of the two electrodes of the capacitor C23 is connected to one end of the switch S26 and one end of the switch S27. The other of the two electrodes of the capacitor C23 is connected to one end of the switch S2A and one end of the switch S2B.

[0101] One of the two electrodes of the capacitor C24 is connected to one end of the switch S28 and one end of the switch S29. The other of the two electrodes of the capacitor C24 is connected to one end of the switch S2C and one end of the switch S2D.

[0102] One of the two electrodes of the capacitor C25 is connected to one end of the switch S2A and one end of the switch S2B. The other of the two electrodes of the capacitor C25 is connected to one end of the switch S2E and one end of the switch S2F.

[0103] Capacitors C26 to C29 are smoothing capacitors used for holding and smoothing the voltages (V1 to V4) at the nodes N1 to N4.

[0104] The capacitor C26 is connected between the node N1 and ground. More specifically, one of the two electrodes of the capacitor C26 is connected to the node N1. On the other hand, the other of the two electrodes of the capacitor C26 is connected to ground.

[0105] The capacitor C27 is connected between the nodes N1 and N2. Specifically, one of the two electrodes of the capacitor C27 is connected to the node N2. On the other hand, the other of the two electrodes of the capacitor C27 is connected to the node N1.

[0106] The capacitor C28 is connected between the nodes N2 and N3. Specifically, one of the two electrodes of the capacitor C28 is connected to the node N3. On the other hand, the other of the two electrodes of the capacitor C28 is connected to the node N2.

[0107] The capacitor C29 is connected between the nodes N3 and N4. Specifically, one of the two electrodes of the capacitor C29 is connected to the node N4. On the other hand, the other of the two electrodes of the capacitor C29 is connected to the node N3.

[0108] The switch S20 is connected between the capacitor C20 and the ground. Specifically, one end of the switch S20 is connected to one of the two electrodes of the capacitor C20. On the other hand, the other end of the switch S20 is connected to the ground.

[0109] The switch S21 is connected between the capacitor C20 and the node N1. Specifically, one end of the switch S21 is connected to one of the two electrodes of the capacitor C20. On the other hand, the other end of the switch S21 is connected to the node N1.

[0110] The switch S22 is connected between the capacitor C21 and the ground. Specifically, one end of the switch S22 is connected to one of the two electrodes of the capacitor C21. On the other hand, the other end of the switch S22 is connected to the ground.

[0111] The switch S23 is connected between the capacitor C21 and the node N1. Specifically, one end of the switch S23 is connected to one of the two electrodes of the capacitor C21. On the other hand, the other end of the switch S23 is connected to the node N1.

[0112] The switch S24 is connected between the capacitors C20 and C22 and the node N1. Specifically, one end of the switch S24 is connected to the other of the two electrodes of the capacitor C20 and one of the two electrodes of the capacitor C22. On the other hand, the other end of the switch S24 is connected to the node N1.

[0113] The switch S25 is connected between the capacitors C20 and C22 and the node N2. Specifically, one end of the switch S25 is connected to the other of the two electrodes of the capacitor C20 and one of the two electrodes of the capacitor C22. On the other hand, the other end of the switch S25 is connected to the node N2.

[0114] Switch S26 is connected between capacitors C21 and C23 and node N1. Specifically, one end of switch S26 is connected to the other of the two electrodes of capacitor C21 and to one of the two electrodes of capacitor C23. The other end of switch S26 is connected to node N1.

[0115] Switch S27 is connected between capacitors C21 and C23 and node N2. Specifically, one end of switch S27 is connected to the other of the two electrodes of capacitor C21 and to one of the two electrodes of capacitor C23. The other end of switch S27 is connected to node N2.

[0116] Switch S28 is connected between capacitors C22 and C24 and node N2. Specifically, one end of switch S28 is connected to the other of the two electrodes of capacitor C22 and to one of the two electrodes of capacitor C24. The other end of switch S28 is connected to node N2.

[0117] Switch S29 is connected between capacitors C22 and C24 and node N3. Specifically, one end of switch S29 is connected to the other of the two electrodes of capacitor C22 and to one of the two electrodes of capacitor C24. The other end of switch S29 is connected to node N3.

[0118] Switch S2A is connected between capacitors C23 and C25 and node N2. Specifically, one end of switch S2A is connected to the other of the two electrodes of capacitor C23 and to one of the two electrodes of capacitor C25. The other end of switch S2A is connected to node N2.

[0119] Switch S2B is connected between capacitors C23 and C25 and node N3. Specifically, one end of switch S2B is connected to the other of the two electrodes of capacitor C23 and to one of the two electrodes of capacitor C25. The other end of switch S2B is connected to node N3.

[0120] Switch S2C is connected between capacitor C24 and node N3. Specifically, one end of switch S2C is connected to the other of the two electrodes of capacitor C24. The other end of switch S2C is connected to node N3.

[0121] Switch S2D is connected between capacitor C24 and node N4. Specifically, one end of switch S2D is connected to the other of the two electrodes of capacitor C24. The other end of switch S2D is connected to node N4.

[0122] The switch S2E is connected between the capacitor C25 and the node N3. Specifically, one end of the switch S2E is connected to the other of the two electrodes of the capacitor C25. On the other hand, the other end of the switch S2E is connected to the node N3.

[0123] The switch S2F is connected between the capacitor C25 and the node N4. Specifically, one end of the switch S2F is connected to the other of the two electrodes of the capacitor C25. On the other hand, the other end of the switch S2F is connected to the node N4.

[0124] The first group of switches including the switches S20, S23, S24, S27, S28, S2B, S2C, and S2F, and the second group of switches including the switches S21, S22, S25, S26, S29, S2A, S2D, and S2E are switched on and off in opposition to each other based on the control signal CS20 from the digital control circuit 50.

[0125] Specifically, in the first stage, the first group of switches is closed, and the second group of switches is opened. Thereby, one of the two electrodes of the capacitor C20 is connected to the ground. The other of the two electrodes of the capacitor C20, one of the two electrodes of the capacitor C21, and one of the two electrodes of the capacitor C22 are connected to the node N1. The other of the two electrodes of the capacitor C21, the other of the two electrodes of the capacitor C22, one of the two electrodes of the capacitor C23, and one of the two electrodes of the capacitor C24 are connected to the node N2. The other of the two electrodes of the capacitor C23, the other of the two electrodes of the capacitor C24, and one of the two electrodes of the capacitor C25 are connected to the node N3. The other of the two electrodes of the capacitor C25 is connected to the node N4.

[0126] On the contrary, in the second stage, the first group of switches is opened, and the second group of switches is closed. Thereby, one of the two electrodes of the capacitor C21 is connected to the ground. One of the two electrodes of the capacitor C20, the other of the two electrodes of the capacitor C21, and one of the two electrodes of the capacitor C23 are connected to the node N1. The other of the two electrodes of the capacitor C20, one of the two electrodes of the capacitor C22, the other of the two electrodes of the capacitor C23, and one of the two electrodes of the capacitor C25 are connected to the node N2. The other of the two electrodes of the capacitor C22, one of the two electrodes of the capacitor C24, and the other of the two electrodes of the capacitor C25 are connected to the node N3. The other of the two electrodes of the capacitor C24 is connected to the node N4.

[0127] By repeating such first and second stages, the capacitors C20 to C25 can complementarily perform charging and discharging. For example, in one of the first and second stages, charging from the capacitors C20, C22, and C24 to the capacitors C26 to C29 is performed, and in the other of the first and second stages, charging from the capacitors C21, C23, and C25 to the capacitors C26 to C29 is performed. In other words, since charging to the capacitors C26 to C29 is performed from any one of the capacitors C20 to C25 at all times, even if current flows at high speed from any one of the nodes N1 to N4 to the power supply modulation circuits 31 and 32, it is possible to supplement charge to any one of the nodes N1 to N4 at high speed, and it is possible to suppress fluctuation in the potentials of the nodes N1 to N4.

[0128] By acting in this way, the switched capacitor circuit 20 can maintain approximately equal voltages across the capacitors C26 to C29 respectively. Specifically, at the four nodes N1 to N4 to which the labels V1 to V4 are attached, V1 to V4 satisfying (V4 - V3) : (V3 - V2) : (V2 - V1) : (V1 - VG) = 1 : 1 : 1 : 1 are maintained. For example, in the case where the regulated voltage supplied from the pre-regulator circuit 10 is 3 V, the switched capacitor circuit 20 can generate (1 V, 2 V, 3 V, 4 V) as a plurality of discrete voltages (V1 to V4).

[0129] Furthermore, (V4 - V3) : (V3 - V2) : (V2 - V1) : (V1 - VG) is not limited to 1 : 1 : 1 : 1, and can be designed to be any ratio (for example, 1 : 2 : 3 : 4, 4 : 3 : 2 : 1, and the like).

[0130] [1.3.3 Circuit structure of power supply modulation circuit 31]

[0131] Next, the detailed circuit structure of the power supply modulation circuit 31 included in the tracker circuit 1 will be described with reference to Figure 3 The detailed circuit structure of the power supply modulation circuit 31 included in the tracker circuit 1 will be described with reference to

[0132] The power supply modulation circuit 31 has input terminals T311 to T314, switches S311 to S314, and an output terminal T315.

[0133] The input terminals T311 to T314 are terminals for accepting a plurality of discrete voltages (V1 to V4) generated by the switched capacitor circuit 20. The input terminals T311 to T314 are externally connected to the output terminals T21 to T24 of the switched capacitor circuit 20 respectively, and are internally connected to the switches S311 to S314 respectively.

[0134] The output terminal T315 is a terminal for outputting a voltage selected from among the plurality of discrete voltages (V1 to V4). The output terminal T315 is externally connected to the voltage adjustment circuit 41 and is internally connected to the switches S311 to S314.

[0135] The switch S311 is connected between the input terminal T311 and the output terminal T315. In this connection structure, the switch S311 can switch between connection and non-connection between the input terminal T311 and the output terminal T315 by switching between on and off in accordance with the control signal CS31 from the second controller 52.

[0136] The switch S312 is connected between the input terminal T312 and the output terminal T315. In this connection structure, the switch S312 can switch between connection and non-connection between the input terminal T312 and the output terminal T315 by switching between on and off in accordance with the control signal CS31 from the second controller 52.

[0137] The switch S313 is connected between the input terminal T313 and the output terminal T315. In this connection structure, the switch S313 can switch between connection and non-connection between the input terminal T313 and the output terminal T315 by switching between on and off in accordance with the control signal CS31 from the second controller 52.

[0138] The switch S314 is connected between the input terminal T314 and the output terminal T315. In this connection structure, the switch S314 can switch between connection and non-connection between the input terminal T314 and the output terminal T315 by switching between on and off in accordance with the control signal CS31 from the second controller 52.

[0139] In the present embodiment, these switches S311 to S314 are controlled to be exclusively turned on. In other words, only one of the switches S311 to S314 is controlled to be closed, and the remaining ones of the switches S311 to S314 are controlled to be open. Thus, the power supply modulation circuit 31 can output one voltage selected from among the plurality of discrete voltages (V1 to V4) to the externally connected terminal 61 via the voltage adjustment circuit 41.

[0140] Further, Figure 3 The structure of the power supply modulation circuit 31 shown is one example, and is not limited thereto. In particular, as long as the switches S311 to S314 can selectively connect at least one of the four input terminals T311 to T314 to the output terminal T315, the switches S311 to S314 can be any structure, and can be controlled arbitrarily. For example, two of the switches S311 to S314 can be closed, and the remaining ones of the switches S311 to S314 can be open.

[0141] [1.3.4 Circuit structure of power supply modulation circuit 32]

[0142] Next, the detailed circuit structure of the power supply modulation circuit 32 included in the tracker circuit 1 will be described with reference to Figure 3

[0143] The power supply modulation circuit 32 has input terminals T321 to T324, switches S321 to S324, and an output terminal T325.

[0144] The input terminals T321 to T324 are terminals for accepting a plurality of discrete voltages (V1 to V4) generated by the switched capacitor circuit 20. The input terminals T321 to T324 are externally connected to the output terminals T21 to T24 of the switched capacitor circuit 20, respectively, and are internally connected to the switches S321 to S324, respectively.

[0145] The output terminal T325 is a terminal for outputting a voltage selected from the plurality of discrete voltages (V1 to V4). The output terminal T325 is externally connected to the voltage adjustment circuit 42 and is internally connected to the switches S321 to S324.

[0146] The switch S321 is connected between the input terminal T321 and the output terminal T325. In this connection structure, the switch S321 can switch the connection and non-connection between the input terminal T321 and the output terminal T325 by switching on and off according to the control signal CS32 from the second controller 52.

[0147] The switch S322 is connected between the input terminal T322 and the output terminal T325. In this connection structure, the switch S322 can switch the connection and non-connection between the input terminal T322 and the output terminal T325 by switching on and off according to the control signal CS32 from the second controller 52.

[0148] The switch S323 is connected between the input terminal T323 and the output terminal T325. In this connection structure, the switch S323 can switch the connection and non-connection between the input terminal T323 and the output terminal T325 by switching on and off according to the control signal CS32 from the second controller 52.

[0149] The switch S324 is connected between the input terminal T324 and the output terminal T325. In this connection structure, the switch S324 can switch the connection and non-connection between the input terminal T324 and the output terminal T325 by switching on and off according to the control signal CS32 from the second controller 52.

[0150] ​In the present embodiment, the switches S321 to S324 are controlled to be exclusively turned on. In other words, the control is such that only one of the switches S321 to S324 is closed, and the remaining ones of the switches S321 to S324 are all opened. Thereby, the power supply modulation circuit 32 can output a voltage selected from among the plurality of discrete voltages (V1 to V4) to the external connection terminal 62 via the voltage adjustment circuit 42.

[0151] Further, Figure 3 The structure of the power supply modulation circuit 32 shown is one example, and is not limited thereto. In particular, the switches S321 to S324 can be any structure as long as they can selectively connect at least one of the four input terminals T321 to T324 to the output terminal T325, and can be controlled arbitrarily. For example, two of the switches S321 to S324 can be closed, and the remaining ones of the switches S321 to S324 can be opened.

[0152] [1.3.5 Circuit structure of voltage adjustment circuits 41 and 42]

[0153] Next, the circuit structure of the voltage adjustment circuits 41 and 42 will be described with reference to FIG. 4. Figure 3 The voltage adjustment circuits 41 and 42 each have a variable resistor R41 and R42.

[0154] The variable resistor R41 is one example of a first variable resistor, and is connected between the output terminal T315 of the power supply modulation circuit 31 and the external connection terminal 61. The variable resistor R42 is one example of a second variable resistor, and is connected between the output terminal T325 of the power supply modulation circuit 32 and the external connection terminal 62. The variable resistors R41 and R42 can adjust the output voltages of the power supply modulation circuits 31 and 32 according to control signals CS41 and CS42, so as to reduce the level difference of the power supply voltages Vcc1 and Vcc2 supplied from the external connection terminals 61 and 62 to the RFIC 2. Such adjustment of the output voltages is performed at the time of calibration, for example. Alternatively, the adjustment of the output voltages can be performed dynamically in units of frames, for example.

[0155] Further, the voltage adjustment circuits 41 and 42 are arbitrary constituent elements, and one or both of the voltage adjustment circuits 41 and 42 can not be included in the tracker circuit 1.

[0156] [1.3.6 Circuit structure of digital control circuit 50]

[0157] Next, the circuit structure of the digital control circuit 50 included in the tracker circuit 1 will be described with reference to FIG. 5. Figure 3 The digital control circuit 50 has a first controller 51 and a second controller 52.

[0158] The first controller 51 is capable of processing the CLK signal and the DATA signal supplied from the RFIC 2, and generating control signals CS10, CS20, CS41, and CS42 for controlling the pre-regulator circuit 10, the switched-capacitor circuit 20, the voltage adjustment circuits 41 and 42.

[0159] The second controller 52 is capable of processing the DCL signal supplied from the RFIC 2 in the D-ET mode, and generating control signals CS31 and 32 for controlling the power supply modulation circuits 31 and 32. Since the second controller 52 generates two control signals CS31 and 32 from the same DCL signal, the power supply modulation circuits 31 and 32 can be controlled so as to select the same voltage from among the plurality of discrete voltages (V1 to V4).

[0160] [1.4 Mounting Example of High Frequency Circuit 6]

[0161] Next, the high frequency module 100 as a mounting example of the high frequency circuit 6 will be described with reference to Figure 4 and Figure 5 Figure 4 is a plan view of the high frequency module 100 of the present embodiment. Figure 5 is a sectional view of the high frequency module 100 of the present embodiment. Figure 5 The sectional plane of the high frequency module 100 in Figure 4 is a sectional plane on the v-v line of

[0162] In addition, in Figure 4 , the illustration of the resin member 94 that covers the plurality of members on the main surface 90a of the module substrate 90 is omitted. Further, in Figure 4 , in order to be able to easily understand the arrangement relationship of the members, a label ( "C20" and the like) indicating the reference numerals is attached to the members on the module substrate 90, and a label ( "SC switching section" and the like) indicating the function is attached to the functional region shown by the broken line within the RFIC 2 and the integrated circuit 91, but the label can not be attached to the actual members. Further, in Figure 4 , the members to which hatching is applied indicate arbitrary members that are not necessary in the present embodiment.

[0163] The high frequency module 100 is provided with the module substrate 90 on which the high frequency circuit 6 shown in Figure 2 is mounted. The module substrate 90 has main surfaces 90a and 90b that face each other. A via conductor, a wiring, and a ground electrode layer, and the like are formed within the module substrate 90 and on the main surface 90a, and Figure 4 and Figure 5 , only the wiring 92 between the external connection terminal 61 and the external connection terminal 75 and the wiring 93 between the external connection terminal 62 and the external connection terminal 76 are illustrated. ​

[0164] As the module substrate 90, for example, a Low Temperature Co-fired Ceramics (LTCC) substrate or a High Temperature Co-fired Ceramics (HTCC) substrate having a laminated structure of a plurality of dielectric layers, an in-component substrate, a substrate having a Redistribution Layer (RDL), or a printed circuit board, or the like can be used, but is not limited to these substrates.

[0165] The RFIC 2, the integrated circuit 91, the power inductor LI l and the capacitor CI l included in the pre-regulator circuit 10, and the capacitors C20 to C29 included in the switched capacitor circuit 20 are arranged on the main surface 90a of the module substrate 90. Further, the power inductor LI l can also be arranged outside the module substrate 90.

[0166] The RFIC 2 is an example of a second integrated circuit, includes the power amplifiers 71 and 72, the low-noise amplifiers 73 and 74, a plurality of external connection terminals including the external connection terminals 75 and 76, the switching circuits 77 and 78, and the phase shift circuits 79 to 82. In the RFIC 2, the power amplifiers 71 and 72 are arranged in the vicinity of the voltage adjustment circuit 41 and the voltage adjustment circuit 42, respectively. Figure 4 In the RFIC 2, only a portion in which the power amplifiers 71 and 72 are mounted (hereinafter, referred to as the power amplifiers 71 and 72 only), and the external connection terminals 75 and 76 are illustrated, and the illustration of other circuits and the like is omitted.

[0167] The power amplifiers 71 and 72 are arranged in the vicinity of the integrated circuit 91. Specifically, the power amplifier 71 is arranged in the vicinity of the voltage adjustment portion 91dl of the voltage adjustment circuit 41 in which the RFIC 2 is mounted. In addition, the power amplifier 72 is arranged in the vicinity of the voltage adjustment portion 91dl of the voltage adjustment circuit 42 in which the RFIC 2 is mounted. Further, the positions of the power amplifiers 71 and 72 in the RFIC 2 can be determined in accordance with the positions of the amplifying transistors.

[0168] The plurality of external connection terminals of the RFIC 2 are electrically connected to the input and output terminals and / or the ground terminals and the like on the main surface 90a of the module substrate 90, for example, by copper electrodes or solder electrodes. Further, in the RFIC 2, the illustration of the plurality of external connection terminals other than the external connection terminals 75 and 76 is omitted. Figure 4

[0169] ​The external connection terminal 75 is an example of a fourth external connection terminal and is electrically connected to the external connection terminal 61 of the integrated circuit 91 via a wiring 92 of the module substrate 90. Here, the external connection terminal 75 is closer to the external connection terminal 61 of the integrated circuit 91 than the external connection terminal 76. It is preferable that the external connection terminal 75 be closest to the external connection terminal 61 of the integrated circuit 91 among the plurality of external connection terminals of the RFIC 2. Thereby, the wiring length of the wiring 92 can be shortened.

[0170] The external connection terminal 76 is an example of a fifth external connection terminal and is electrically connected to the external connection terminal 62 of the integrated circuit 91 via a wiring 93 of the module substrate 90. Here, the external connection terminal 76 is closer to the external connection terminal 62 of the integrated circuit 91 than the external connection terminal 75. It is preferable that the external connection terminal 76 be closest to the external connection terminal 62 of the integrated circuit 91 among the plurality of external connection terminals of the RFIC 2. Thereby, the wiring length of the wiring 93 can be shortened.

[0171] The integrated circuit 91 is an example of a first integrated circuit and includes a PR switch section 91a, an SC switch section 91b, SM switch sections 91c1 and 91c2, voltage adjustment sections 91d1 and 91d2, a digital control section 91e, and a plurality of external connection terminals including the external connection terminals 61 to 64.

[0172] The PR switch section 91a is an example of a first switch section and includes the switches S11 to S14 of the pre-regulator circuit 10. The SC switch section 91b is an example of a first switch section and includes the switches S20 to S2F of the switched-capacitor circuit 20.

[0173] The SM switch section 91c1 is an example of a second switch section and includes the switches S311 to S314 of the power-modulation circuit 31. The SM switch section 91c1 is closer to the power amplifier 71 than the SM switch section 91c2. In addition, the power amplifier 71 is closer to the SM switch section 91c1 than the power amplifier 72.

[0174] The SM switch section 91c2 is an example of a third switch section and includes the switches S321 to S324 of the power-modulation circuit 32. The SM switch section 91c2 is closer to the power amplifier 72 than the SM switch section 91c1. In addition, the power amplifier 72 is closer to the SM switch section 91c2 than the power amplifier 71.

[0175] The voltage adjustment section 91d1 includes the variable resistor R41 of the voltage adjustment circuit 41. The voltage adjustment section 91d2 includes the variable resistor R42 of the voltage adjustment circuit 42. The digital control section 91e includes the first controller 51 and the second controller 52 of the digital control circuit 50.

[0176] The plurality of external connection terminals of the integrated circuit 91 are electrically connected to input / output terminals and / or ground terminals on the main surface 90a of the module substrate 90, for example, by copper electrodes or solder electrodes. Further, in Figure 4 the plurality of external connection terminals of the integrated circuit 91, except for the external connection terminals 61 to 64, are omitted from the drawing.

[0177] The external connection terminal 61 is an example of a first external connection terminal and is electrically connected to the external connection terminal 75 of the RFIC 2 via the wiring 92 of the module substrate 90. Here, the external connection terminal 61 is closer to the external connection terminal 75 of the RFIC 2 than the external connection terminal 62. It is preferable that the external connection terminal 61 be closest to the external connection terminal 75 of the RFIC 2 among the plurality of external connection terminals of the integrated circuit 91. By doing so, the wiring length of the wiring 92 can be shortened.

[0178] The external connection terminal 62 is an example of a second external connection terminal and is electrically connected to the external connection terminal 76 of the RFIC 2 via the wiring 93 of the module substrate 90. Here, the external connection terminal 62 is closer to the external connection terminal 76 of the RFIC 2 than the external connection terminal 61. It is preferable that the external connection terminal 62 be closest to the external connection terminal 76 of the RFIC 2 among the plurality of external connection terminals of the integrated circuit 91. By doing so, the wiring length of the wiring 93 can be shortened.

[0179] The external connection terminal 63 is an example of a third external connection terminal and receives a first digital control signal. The first digital control signal is supplied to the digital control section 91e and is used for control of the switches in the PR switch section 91a and the SC switch section 91b and the variable resistors in the voltage adjustment sections 91d1 and 91d2.

[0180] The external connection terminal 64 is an example of a sixth external connection terminal and receives a second digital control signal. The second digital control signal is supplied to the digital control section 91e and is used for control of the switches in the SM switch sections 91c1 and 91c2.

[0181] Further, in Figure 4In the present embodiment, the PR switch section 91a, the SC switch section 91b, the SM switch sections 91cl and 91c2, and the voltage adjustment sections 91dl and 91d2 are included in one integrated circuit 91, but are not limited thereto. For example, the PR switch section 91a, the SC switch section 91b, the SM switch sections 91cl and 91c2, and the voltage adjustment sections 91dl and 91d2 can be independently included in a plurality of integrated circuits. For another example, the PR switch section 91a and the SC switch section 91b can be included in one integrated circuit, and the SM switch sections 91cl and 91c2 and the voltage adjustment sections 91dl and 91d2 can be included in another integrated circuit. Further, the plurality of integrated circuits can be manufactured in different process technology nodes.

[0182] The integrated circuit 91 can be configured using CMOS (Complementary Metal Oxide Semiconductor), specifically manufactured by an SOI (Silicon on Insulator) process, for example. Further, the integrated circuit 91 is not limited to CMOS.

[0183] The capacitors C20 to C29 are mounted as chip capacitors, respectively. The chip capacitor refers to a surface mount device (SMD) that configures a capacitor. Further, the mounting of the plurality of capacitors is not limited to the chip capacitors. For example, a part or all of the plurality of capacitors can be included in an integrated passive device (IPD), and can be included in the integrated circuit 91.

[0184] The wiring 92 electrically connects the external connection terminal 61 of the tracker circuit 1 formed in the integrated circuit 91 and the external connection terminal 75 of the RFIC 2. The wiring 92 is configured by a wiring pattern disposed on the main surface 90a of the module substrate 90, and / or a via conductor and a wiring pattern disposed in the module substrate 90.

[0185] The wiring 93 electrically connects the external connection terminal 62 of the tracker circuit 1 formed in the integrated circuit 91 and the external connection terminal 76 of the RFIC 2. The wiring 93 is configured by a wiring pattern disposed on the main surface 90a of the module substrate 90, and / or a via conductor and a wiring pattern disposed in the module substrate 90.

[0186] The resin member 94 covers the components arranged on the main surface 90a of the module substrate 90. The resin member 94 is composed of, for example, an epoxy resin, and has a function of ensuring the mechanical strength and reliability such as moisture resistance of the plurality of electronic components on the main surface 90a. In addition, the resin member 94 can not be included in the high-frequency module 100.

[0187] A plurality of external connection terminals 95 are arranged on the main surface 90b of the module substrate 90. The plurality of external connection terminals 95 are electrically connected to input / output terminals and / or ground terminals and the like arranged on a mother substrate (not shown) in the negative direction of the z-axis of the high-frequency module 100. In addition, the plurality of external connection terminals 95 are electrically connected to the plurality of components arranged on the main surface 90a via a via conductor or the like formed in the module substrate 90.

[0188] As the plurality of external connection terminals 95, a copper electrode can be used, but is not limited thereto. For example, a solder electrode can be used as the plurality of external connection terminals 95.

[0189] In addition, Figure 4 and Figure 5 The high-frequency module 100 illustrated in the drawing is an example, and is not limited thereto. For example, a shielding electrode layer formed by, for example, a sputtering method can cover the surface of the resin member 94. By connecting the shielding electrode layer to the ground, the invasion of external noise into the components in the high-frequency module 100 can be suppressed, and the noise generated in the high-frequency module 100 can be suppressed from interfering with other modules or other devices.

[0190] [1.5 Amplification method]

[0191] Next, the amplification method of the present embodiment will be described with reference to Figure 6 The amplification method of the present embodiment will be described. Figure 6 is a flowchart showing the amplification method of the present embodiment.

[0192] First, the voltage generation circuit 60 generates a plurality of discrete voltages (V1 to V4) based on an input voltage (Vbat) (S101). The RFIC 2 generates a first digital control signal based on an envelope signal of a millimeter wave signal (S102). The power supply modulation circuit 31 selects one voltage from the plurality of discrete voltages (V1 to V4) according to the first digital control signal generated in step S102 and supplies it to the power amplifier 71 (S103). The power amplifier 71 amplifies the millimeter wave signal using the voltage supplied from the power supply modulation circuit 31 and outputs it to the antenna 3 (S104). The power supply modulation circuit 32 selects the same voltage as in step S103 from the plurality of discrete voltages (V1 to V4) according to the first digital control signal generated in step S102 and supplies it to the power amplifier 72 (S105). The power amplifier 72 amplifies the millimeter wave signal and outputs it to the antenna 4 (S106).

[0193] [1.6 Effects, etc.]

[0194] As above, the high-frequency circuit 6 of the present embodiment has: the power amplifier 71 connected to the antenna 3 and configured to amplify a millimeter wave signal; the power amplifier 72 connected to the antenna 4 different from the antenna 3 and configured to amplify a millimeter wave signal; the voltage generation circuit 60 configured to generate a plurality of discrete voltages based on an input voltage; the power supply modulation circuit 31 configured to selectively output one voltage of the plurality of discrete voltages to the power amplifier 71; and the power supply modulation circuit 32 configured to selectively output one voltage of the plurality of discrete voltages to the power amplifier 72, the power supply modulation circuit 31 and the power supply modulation circuit 32 being configured to select the same voltage from the plurality of discrete voltages according to a first digital control signal.

[0195] Accordingly, the voltage selected from the plurality of discrete voltages according to the first digital control signal is supplied to the power amplifiers 71 and 72 connected to the different antennas 3 and 4, respectively. Therefore, for example, in the communication device 5 that simultaneously transmits the same data of a millimeter wave signal from the two antennas 3 and 4 for beamforming, the power addition efficiency can be improved by the two power amplifiers 71 and 72. In addition, the voltage generation circuit 60 can be shared by the two power amplifiers 71 and 72, and the circuit scale of the high-frequency circuit 6 can be reduced to contribute to the miniaturization of the communication device 5.

[0196] In addition, for example, in the high-frequency circuit 6 of the present embodiment, the first digital control signal can also be a DCL signal based on a parallel data transmission standard.

[0197] Accordingly, the switching control of the power supply modulation circuits 31 and 32 can be made high speed, and in the case of applying the D-ET mode to the power amplifiers 71 and 72, the followability of the power supply voltages (Vcc1 and Vcc2) supplied to the power amplifiers 71 and 72 to the envelope signal can be improved.

[0198] In addition, for example, in the high-frequency circuit 6 of the present embodiment, the voltage generation circuit 60 can also be configured to generate a plurality of discrete voltages according to a second digital control signal based on a serial data transmission standard.

[0199] Accordingly, the control of the voltage generation circuit 60 can utilize the conventional digital control signal.

[0200] In addition, for example, the high-frequency circuit 6 of the present embodiment can also have a voltage adjustment circuit 41 connected between the power supply modulation circuit 31 and the power amplifier 71 and configured to adjust the voltage output from the power supply modulation circuit 31.

[0201] Accordingly, in a case where there is a level difference between the power supply voltage Vcc1 supplied to the power amplifier 71 and the power supply voltage Vcc2 supplied to the power amplifier 72, the level of the power supply voltage Vcc1 can be adjusted by the voltage adjustment circuit 41, and the level difference between the power supply voltages Vcc1 and Vcc2 can be reduced. As a result, the error of the two millimeter wave signals amplified by the two power amplifiers 71 and 72, respectively, can be reduced.

[0202] Further, for example, in the high-frequency circuit 6 of the present embodiment, the voltage adjustment circuit 41 can include a variable resistor R41.

[0203] Accordingly, the voltage adjustment circuit 41 can be implemented by a simple structure.

[0204] Further, for example, the high-frequency circuit 6 of the present embodiment can further include a voltage adjustment circuit 42 connected between the power supply modulation circuit 32 and the power amplifier 72, and configured to adjust the voltage output from the power supply modulation circuit 32.

[0205] Accordingly, in a case where there is a level difference between the power supply voltage Vcc1 supplied to the power amplifier 71 and the power supply voltage Vcc2 supplied to the power amplifier 72, the level of the power supply voltage Vcc2 can be adjusted by the voltage adjustment circuit 42, and the level difference between the power supply voltages Vcc1 and Vcc2 can be reduced. As a result, the error of the two millimeter wave signals amplified by the two power amplifiers 71 and 72, respectively, can be reduced.

[0206] Further, for example, in the high-frequency circuit 6 of the present embodiment, the voltage adjustment circuit 42 can include a variable resistor R42.

[0207] Accordingly, the voltage adjustment circuit 42 can be implemented by a simple structure.

[0208] In addition, the high-frequency module 100 of the present embodiment includes the module substrate 90, and the integrated circuit 91 and the RFIC 2 disposed on the module substrate 90. The integrated circuit 91 includes the external connection terminals 61 and 62, the external connection terminal 63 that receives the first digital control signal, the PR switch section 91a and the SC switch section 91b that include at least one switch included in the voltage generation circuit 60 configured to generate a plurality of discrete voltages based on an input voltage, the SM switch section 91cl that includes at least one switch included in the power supply modulation circuit 31 configured to select one voltage from among the plurality of discrete voltages and output to the external connection terminal 61, the SM switch section 91c2 that includes at least one switch included in the power supply modulation circuit 32 configured to select the same one voltage from among the plurality of discrete voltages and output to the external connection terminal 62, and the digital control section 91e configured to control the SM switch sections 91cl and 91c2 in accordance with the first digital control signal. The RFIC 2 includes the external connection terminal 75 connected to the external connection terminal 61, the external connection terminal 76 connected to the external connection terminal 62, the power amplifier 71 configured to amplify a millimeter wave signal using a voltage received from the integrated circuit 91 via the external connection terminal 75 and connected to the antenna 3, and the power amplifier 72 configured to amplify a millimeter wave signal using a voltage received from the integrated circuit 91 via the external connection terminal 76 and connected to the antenna 4 different from the antenna 3.

[0209] Accordingly, one voltage selected from among the plurality of discrete voltages in accordance with the first digital control signal is supplied to the power amplifiers 71 and 72 connected to the different antennas 3 and 4, respectively. Therefore, for example, in the communication device 5 that simultaneously transmits the same data millimeter wave signal from the two antennas 3 and 4 for beamforming, the power addition efficiency can be improved by the two power amplifiers 71 and 72. In addition, the voltage generation circuit 60 can be shared by the two power amplifiers 71 and 72, and the high-frequency module 100 can be miniaturized.

[0210] In addition, for example, in the high-frequency module 100 of the present embodiment, the SM switch section 91cl can be closer to the power amplifier 71 than the SM switch section 91c2.

[0211] Accordingly, the SM switch section 91cl can be made closer to the power amplifier 71, and the length of the wiring between the SM switch section 91cl and the power amplifier 71 can be shortened. Therefore, the deterioration of the power supply voltage Vcc1 modulated by the power supply modulation circuit 31 can be suppressed, and the improvement of the power addition efficiency of the power amplifier 71 can be achieved.

[0212] Also, for example, in the high-frequency module 100 of the present embodiment, the SM switch section 91c2 can be closer to the power amplifier 72 than the SM switch section 91cl.

[0213] Accordingly, the SM switch section 91c2 can be made closer to the power amplifier 72, and the length of the wiring between the SM switch section 91c2 and the power amplifier 72 can be shortened. Thus, deterioration of the power supply voltage Vcc2 modulated by the power supply modulation circuit 32 can be suppressed, and an increase in the power added efficiency of the power amplifier 72 can be achieved.

[0214] Also, for example, in the high-frequency module 100 of the present embodiment, the power amplifier 71 can be closer to the SM switch section 91cl than the power amplifier 72.

[0215] Accordingly, the power amplifier 71 can be made closer to the SM switch section 91cl, and the length of the wiring between the SM switch section 91cl and the power amplifier 71 can be shortened. Thus, deterioration of the power supply voltage Vccl modulated by the power supply modulation circuit 31 can be suppressed, and an increase in the power added efficiency of the power amplifier 71 can be achieved.

[0216] Also, for example, in the high-frequency module 100 of the present embodiment, the power amplifier 72 can be closer to the SM switch section 91c2 than the power amplifier 71.

[0217] Accordingly, the power amplifier 72 can be made closer to the SM switch section 91c2, and the length of the wiring between the SM switch section 91c2 and the power amplifier 72 can be shortened. Thus, deterioration of the power supply voltage Vcc2 modulated by the power supply modulation circuit 32 can be suppressed, and an increase in the power added efficiency of the power amplifier 72 can be achieved.

[0218] Also, for example, in the high-frequency module 100 of the present embodiment, the external connection terminal 61 can be closer to the external connection terminal 75 than the external connection terminal 62.

[0219] Accordingly, the external connection terminal 61 can be made closer to the external connection terminal 75, and the length of the wiring 92 between the external connection terminals 61 and 75 can be shortened. Thus, deterioration of the power supply voltage Vccl supplied to the power amplifier 71 via the external connection terminals 61 and 75 can be suppressed, and an increase in the power added efficiency of the power amplifier 71 can be achieved.

[0220] Also, for example, in the high-frequency module 100 of the present embodiment, the external connection terminal 62 can be closer to the external connection terminal 76 than the external connection terminal 61.

[0221] Accordingly, the external connection terminal 62 can be brought closer to the external connection terminal 76, and the wiring length of the wiring 93 between the external connection terminals 62 and 76 can be shortened. Thus, the deterioration of the power supply voltage Vcc2 supplied to the power amplifier 72 via the external connection terminals 62 and 76 can be suppressed, and the improvement of the power added efficiency of the power amplifier 72 can be achieved.

[0222] Also, for example, in the high-frequency module 100 of the present embodiment, the external connection terminal 75 can be closer to the external connection terminal 61 than the external connection terminal 76.

[0223] Accordingly, the external connection terminal 75 can be brought closer to the external connection terminal 61, and the wiring length of the wiring 92 between the external connection terminals 61 and 75 can be shortened. Thus, the deterioration of the power supply voltage Vcc1 supplied to the power amplifier 71 via the external connection terminals 61 and 75 can be suppressed, and the improvement of the power added efficiency of the power amplifier 71 can be achieved.

[0224] Also, for example, in the high-frequency module 100 of the present embodiment, the external connection terminal 76 can be closer to the external connection terminal 62 than the external connection terminal 75.

[0225] Accordingly, the external connection terminal 76 can be brought closer to the external connection terminal 62, and the wiring length of the wiring 93 between the external connection terminals 62 and 76 can be shortened. Thus, the deterioration of the power supply voltage Vcc2 supplied to the power amplifier 72 via the external connection terminals 62 and 76 can be suppressed, and the improvement of the power added efficiency of the power amplifier 72 can be achieved.

[0226] Also, the amplification method of the present embodiment generates a plurality of discrete voltages based on an input voltage (S101), generates a digital control signal based on an envelope signal of a millimeter wave signal (S102), the power supply modulation circuit 31 selects one voltage from the plurality of discrete voltages according to the digital control signal and supplies it to the power amplifier 71 (S103), the power amplifier 71 amplifies the millimeter wave signal and outputs it to the antenna 3 (S104), the power supply modulation circuit 32 selects the same voltage from the plurality of discrete voltages according to the digital control signal and supplies it to the power amplifier 72 (S105), and the power amplifier 72 amplifies the millimeter wave signal and outputs it to the antenna 4 (S106).

[0227] Accordingly, one voltage selected from the plurality of discrete voltages according to the digital control signal based on the envelope signal is supplied to the power amplifiers 71 and 72 connected to the different antennas 3 and 4, respectively. Thus, for example, in the communication device 5 in which the same data of a millimeter wave signal is simultaneously transmitted from the two antennas 3 and 4 for beamforming, the D-ET mode can be applied to the two power amplifiers 71 and 72, and the power added efficiency of the power amplifiers 71 and 72 can be improved.

[0228] (Embodiment 2)

[0229] Next, Embodiment 2 will be described. This embodiment differs from Embodiment 1 in the structure of the voltage adjustment circuit. Hereinafter, this embodiment will be described focusing on the points different from Embodiment 1 with reference to the drawings.

[0230] The tracker circuit 1 of this embodiment differs from the tracker circuit 1 of Embodiment 1 in that it is provided with voltage adjustment circuits 41A and 42A instead of the voltage adjustment circuits 41 and 42. Therefore, the description of the circuits other than the voltage adjustment circuits 41A and 42A will be omitted.

[0231] [2.1 Circuit structure of voltage adjustment circuits 41A and 42A]

[0232] Referring to Figure 7A and Figure 7B The circuit structure of the voltage adjustment circuits 41A and 42A will be described. In addition, Figure 7A and Figure 7B are example circuit structures, and the voltage adjustment circuits 41A and 42A can be installed using any of a variety of circuit mounting and circuit technologies. Therefore, the description of the voltage adjustment circuits 41A and 42A provided below should not be interpreted restrictively.

[0233] The voltage adjustment circuit 41A is provided with a switched capacitor 411A and a selector 412A.

[0234] The switched capacitor 411A is an example of a first switched capacitor, and can generate a plurality of voltages from the voltage supplied from the power supply modulation circuit 31. The circuit structure of the switched capacitor 411A is the same as that of the switched capacitor circuit 20, so the illustration and description thereof will be omitted.

[0235] The selector 412A is an example of a first selector, and can select one voltage from the plurality of voltages generated by the switched capacitor 411A. The selected voltage is output to the external connection terminal 61. The circuit structure of the selector 412A is the same as that of the power supply modulation circuit 31, so the description thereof will be omitted. In addition, the selector 412A differs from the power supply modulation circuit 31 in that it is controlled in accordance with a second digital control signal.

[0236] The voltage adjustment circuit 42A is provided with a switched capacitor 421A and a selector 422A.

[0237] The switched capacitor 421A is an example of a second switched capacitor and is capable of generating a plurality of voltages from a voltage supplied from the power supply modulation circuit 32. The circuit structure of the switched capacitor 421A is the same as that of the switched capacitor circuit 20, and therefore the illustration and description thereof are omitted.

[0238] The selector 422A is an example of a second selector and is capable of selecting one voltage from among the plurality of voltages generated by the switched capacitor 421A. The selected voltage is output to the external connection terminal 62. The circuit structure of the selector 422A is the same as that of the power supply modulation circuit 32, and therefore the description thereof is omitted. Further, the selector 422A differs from the power supply modulation circuit 32 in that it is controlled in accordance with a second digital control signal, as opposed to a first digital control signal.

[0239] [2.2 Effects and the like]

[0240] As described above, in the high-frequency circuit 6 of the present embodiment, the voltage adjustment circuit 41A can also include a switched capacitor 411A configured to generate a first plurality of voltages based on a voltage output from the power supply modulation circuit 31, and a selector 412A configured to select one first voltage from among the first plurality of voltages generated by the switched capacitor 411A.

[0241] Accordingly, the voltage adjustment circuit 41A is capable of not only stepping down the voltage output from the power supply modulation circuit 31 but also stepping up the voltage, and can increase the flexibility of voltage adjustment.

[0242] As described above, in the tracker circuit 1 of the present embodiment, the voltage adjustment circuit 42A can also include a switched capacitor 421A configured to generate a second plurality of voltages based on a voltage output from the power supply modulation circuit 32, and a selector 422A configured to select one second voltage from among the second plurality of voltages generated by the switched capacitor 421A.

[0243] Accordingly, the voltage adjustment circuit 42A is capable of not only stepping down the voltage output from the power supply modulation circuit 32 but also stepping up the voltage, and can increase the flexibility of voltage adjustment.

[0244] (Embodiment 3)

[0245] Next, Embodiment 3 will be described. In the present embodiment, the main difference from Embodiment 1 is that the high-frequency circuit 6 is mounted on both surfaces of the module substrate 90. Hereinafter, the present embodiment will be described with focus on the points different from Embodiment 1, with reference to the drawings.

[0246] Further, the circuit structures of the communication device 5, the tracker circuit 1, and the RFIC 2 are the same as in Embodiment 1, and therefore the illustrations and descriptions thereof are omitted.

[0247] [3.1 Mounting example of the tracker circuit 1 and the RFIC 2]

[0248] Referring to Figures 8-10 The high-frequency module 100A of the present embodiment as a mounting example of the high-frequency circuit 6 will be described.

[0249] Figure 8 is a plan view of the high-frequency module 100A of the present embodiment. Figure 9 is a plan view of the high-frequency module 100A of the present embodiment, and is a view from the z-axis positive side of the main surface 90b side of the module substrate 90. Figure 10 is a sectional view of the high-frequency module 100A of the present embodiment. Figure 10 The sectional plane of the high-frequency module 100A in Figure 8 is the x-x line of Figure 9 .

[0250] In Figure 8 and Figure 9 , the illustration of the resin member 94 that covers the plurality of members on the main surfaces 90a and 90b of the module substrate 90 is omitted. In Figure 8 and Figure 9 , in order to be able to easily understand the arrangement relationship of the members, a label ( "C20" and the like) indicating the reference numerals of the members on the module substrate 90 is added, and a label ( "SC switch section" and the like) indicating the function of the functional region shown by the broken line in the RFIC 2 and the integrated circuit 91 is added, but the label can not be added to the actual members. In Figure 9 , the members to which hatching is applied indicate arbitrary members that are not necessary in the present embodiment.

[0251] The high-frequency module 100A has the module substrate 90 on which the high-frequency circuit 6 shown in Figure 2 is mounted. The module substrate 90 is a double-sided mounting substrate, and has the main surfaces 90a and 90b that face each other. A via conductor, a wiring pattern, a ground electrode layer, and the like are formed in the module substrate 90 and on the main surface 90a, and only the wiring 92A between the external connection terminal 61 and the external connection terminal 75 is illustrated.

[0252] In the present embodiment, the integrated circuit 91, the power inductor L11 and the capacitor C11 included in the pre-regulator circuit 10, and the capacitors C20 to C29 included in the switched-capacitor circuit 20 are arranged on the main surface 90b of the module substrate 90.

[0253] The external connection terminal 75 of the RFIC 2 is electrically connected to the external connection terminal 61 of the integrated circuit 91 arranged on the main surface 90b via a wiring 92A of the module substrate 90. Here, the external connection terminal 75 is closer to the external connection terminal 61 of the integrated circuit 91 than the external connection terminal 76. Thus, the wiring length of the wiring 92A can be shortened.

[0254] The external connection terminal 76 of the RFIC 2 is electrically connected to the external connection terminal 62 of the integrated circuit 91 arranged on the main surface 90b via a wiring (not shown) of the module substrate 90. Here, the external connection terminal 76 is closer to the external connection terminal 62 of the integrated circuit 91 than the external connection terminal 75. Thus, the wiring length between the external connection terminals 76 and 62 can be shortened.

[0255] The external connection terminal 61 of the integrated circuit 91 is electrically connected to the external connection terminal 75 of the RFIC 2 via the wiring 92A of the module substrate 90. Here, the external connection terminal 61 is closer to the external connection terminal 75 of the RFIC 2 than the external connection terminal 62. Thus, the wiring length of the wiring 92A can be shortened.

[0256] The external connection terminal 62 of the integrated circuit 91 is electrically connected to the external connection terminal 76 of the RFIC 2 via a wiring of the module substrate 90. Here, the external connection terminal 62 is closer to the external connection terminal 76 of the RFIC 2 than the external connection terminal 61. Thus, the wiring length between the external connection terminals 62 and 76 can be shortened.

[0257] The voltage adjustment section 91d1 in the integrated circuit 91 at least partially overlaps the power amplifier 71 in the RFIC 2 when viewed from the top of the module substrate 90. Similarly, the voltage adjustment section 91d2 in the integrated circuit 91 at least partially overlaps the power amplifier 72 in the RFIC 2 when viewed from the top of the module substrate 90.

[0258] The wiring 92A electrically connects the external connection terminal 61 of the tracker circuit 1 formed in the integrated circuit 91 to the external connection terminal 75 of the RFIC 2. The wiring 92A is composed of a wiring pattern arranged on the main surface 90a of the module substrate 90, and / or a via conductor and a wiring pattern arranged in the module substrate 90.

[0259] The resin member 94 covers the components arranged on the main surfaces 90a and 90b of the module substrate 90. The resin member 94 is composed of, for example, an epoxy resin, and has a function of ensuring the mechanical strength and the reliability such as moisture resistance of the plurality of electronic components on the main surfaces 90a and 90b. In addition, the resin member 94 can not be included in the high-frequency module 100A.

[0260] As the plurality of external connection terminals 95, a copper pillar electrode can be used, for example, but is not limited thereto.

[0261] [3.2 Effects, etc.]

[0262] As described above, in the high-frequency module 100A of this embodiment, the high-frequency circuit 6 may also be mounted on the opposing main surfaces 90a and 90b of the module substrate 90.

[0263] Therefore, the miniaturization of the high-frequency module 100A can be achieved.

[0264] (Other implementation methods)

[0265] The high-frequency circuit, high-frequency module, and amplification method of the present invention have been described above based on the embodiments, but the high-frequency circuit, high-frequency module, and amplification method of the present invention are not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, variations of the above embodiments that can be conceived by those skilled in the art by implementing various modifications to the above embodiments without departing from the spirit of the present invention, and various devices that incorporate the above high-frequency circuit or high-frequency module are also included in the present invention.

[0266] For example, in the circuit structures of the various circuits in the above embodiments, other circuit elements and wiring may be inserted between the circuit elements and signal paths disclosed in the drawings. For example, a filter and / or impedance matching circuit may be inserted between the power amplifier 71 and the antenna 3.

[0267] Furthermore, the number of discrete voltages generated by the switched capacitor circuit 20 in the above embodiments is illustrative and is not limited to the number shown in the above embodiments. For example, in the above embodiments, the switched capacitor circuit 20 may generate three or fewer discrete voltages, or it may generate five or more discrete voltages. In this case, the number of stages in the ladder circuit structure of the switched capacitor circuit 20 may be increased.

[0268] Furthermore, in the above embodiments, the communication device 5 may also include four power amplifiers and four antennas respectively connected to the four power amplifiers. In this case, the tracker circuit 1 may also include four power modulation circuits, which may each supply power voltage to the four power amplifiers. Moreover, the four power amplifiers may be installed together in one RFIC, or two may be installed separately in two RFICs.

[0269] The features of the high-frequency circuit, high-frequency module, and amplification method described below are shown.

[0270] <1> A high-frequency circuit, comprising:

[0271] The first power amplifier is connected to the first antenna and is configured to amplify millimeter-wave signals;

[0272] The second power amplifier is connected to a second antenna, which is different from the first antenna described above, and is configured to amplify the millimeter-wave signal described above.

[0273] The voltage generation circuit is configured to generate multiple discrete voltages based on the input voltage.

[0274] The first power supply modulation circuit is configured to selectively output one of the plurality of discrete voltages to the first power amplifier; and

[0275] The second power supply modulation circuit is configured to selectively output one of the aforementioned discrete voltages to the aforementioned second power amplifier.

[0276] The first power modulation circuit and the second power modulation circuit described above are configured to select the same voltage from the plurality of discrete voltages according to the first digital control signal.

[0277] <2> According to the high-frequency circuit described in <1>, where,

[0278] The aforementioned first digital control signal is a digital control level signal based on the parallel data transmission standard.

[0279] <3> According to the high-frequency circuit described in <1> or <2>, where,

[0280] The voltage generation circuit described above is configured to generate the aforementioned discrete voltages based on a second digital control signal based on a serial data transmission standard.

[0281] <4> The high-frequency circuit described in any one of <1> to <3>, wherein,

[0282] The aforementioned high-frequency circuit also includes a first voltage adjustment circuit, which is connected between the first power modulation circuit and the first power amplifier, and is configured to adjust the voltage output from the first power modulation circuit.

[0283] <5> According to the high-frequency circuit described in <4>, where,

[0284] The aforementioned first voltage adjustment circuit includes a first variable resistor.

[0285] <6> According to the high-frequency circuit described in <4>, where,

[0286] The aforementioned first voltage adjustment circuit includes:

[0287] The first switched capacitor is configured to generate a first plurality of voltages based on the voltage output from the first power modulation circuit; and

[0288] The first selector is configured to select a first voltage from the first plurality of voltages generated by the first switched capacitor.

[0289] <7> The high-frequency circuit described in any one of <4> to <6>, wherein,

[0290] The aforementioned high-frequency circuit also includes a second voltage adjustment circuit, which is connected between the second power modulation circuit and the second power amplifier, and is configured to adjust the voltage output from the second power modulation circuit.

[0291] <8> According to the high-frequency circuit described in <7>, in which,

[0292] The aforementioned second voltage adjustment circuit includes a second variable resistor.

[0293] <9> According to the high-frequency circuit described in <7>, in which,

[0294] The second voltage adjustment circuit mentioned above includes:

[0295] The second switched capacitor is configured to generate a second plurality of voltages based on the voltage output from the second power modulation circuit; and

[0296] The second selector is configured to select a second voltage from the second plurality of voltages generated by the second switched capacitor.

[0297] <10> A high-frequency module, comprising:

[0298] Module substrate; and

[0299] The first integrated circuit and the second integrated circuit are disposed on the aforementioned module substrate.

[0300] The aforementioned first integrated circuit includes:

[0301] First external connection terminal and second external connection terminal;

[0302] The third external connection terminal receives the first digital control signal;

[0303] The first switching section includes at least one switch included in the voltage generation circuit, which is configured to generate multiple discrete voltages based on the input voltage.

[0304] The second switching section includes at least one switch included in the first power modulation circuit, wherein the first power modulation circuit is configured to select a voltage from the plurality of discrete voltages and output it to the first external connection terminal.

[0305] The third switching section includes at least one switch included in the second power modulation circuit, wherein the second power modulation circuit is configured to select the same voltage from the plurality of discrete voltages and output it to the second external connection terminal; and

[0306] The digital control unit is configured to control the second and third switching units according to the first digital control signal.

[0307] The second integrated circuit mentioned above includes:

[0308] The fourth external connection terminal is connected to the first external connection terminal mentioned above;

[0309] The fifth external connection terminal is connected to the second external connection terminal mentioned above;

[0310] A first power amplifier is configured to amplify a millimeter-wave signal using a voltage received from the first integrated circuit via the fourth external connection terminal, and is connected to a first antenna; and

[0311] The second power amplifier is configured to amplify the millimeter-wave signal using a voltage received from the first integrated circuit via the fifth external connection terminal, and is connected to a second antenna that is different from the first antenna.

[0312] <11> According to the high-frequency module described in <10>, among which,

[0313] The second switching section is closer to the first power amplifier than the third switching section.

[0314] <12> According to the high-frequency module described in <10> or <11>, among which,

[0315] The third switch section is closer to the second power amplifier than the second switch section.

[0316] <13> The high-frequency module described in any one of <10> to <12>, wherein,

[0317] The first power amplifier is closer to the second switch section than the second power amplifier.

[0318] <14> The high-frequency module described in any one of <10> to <13>, wherein,

[0319] The second power amplifier is closer to the third switch section than the first power amplifier.

[0320] <15> The high-frequency module described in any one of <10> to <14>, wherein,

[0321] The first external connection terminal is closer to the fourth external connection terminal than the second external connection terminal.

[0322] <16> The high-frequency module described in any one of <10> to <15>, wherein,

[0323] The second external connection terminal is closer to the fifth external connection terminal than the first external connection terminal.

[0324] <17> The high-frequency module described in any one of <10> to <16>, wherein,

[0325] The fourth external connection terminal is closer to the first external connection terminal than the fifth external connection terminal.

[0326] <18> The high-frequency module described in any one of <10> to <17>, wherein,

[0327] The fifth external connection terminal is closer to the second external connection terminal than the fourth external connection terminal.

[0328] <19> A method of magnification,

[0329] Multiple discrete voltages are generated based on the input voltage.

[0330] Digital control signals are generated based on the envelope signal of millimeter-wave signals.

[0331] The first power supply modulation circuit selects a voltage from the plurality of discrete voltages according to the aforementioned digital control signal and supplies it to the first power amplifier.

[0332] The aforementioned first power amplifier amplifies the millimeter-wave signal and outputs it to the first antenna.

[0333] The second power supply modulation circuit selects the same voltage from the plurality of discrete voltages according to the digital control signal and supplies it to the second power amplifier.

[0334] The aforementioned second power amplifier amplifies the millimeter-wave signal and outputs it to the second antenna.

[0335] This invention can be used as a high-frequency circuit that selectively supplies multiple discrete voltages and is widely applicable to communication devices such as mobile phones.

[0336] Explanation of reference numerals in the attached figures

[0337] 1… Tracker circuit, 2… RFIC, 3, 4… Antenna, 5… Communication device, 6… High-frequency circuit, 10… Pre-conditioner circuit, 20… Switched capacitor circuit, 31, 32… Power modulation circuit, 41, 41A, 42, 42A… Voltage adjustment circuit, 50… Digital control circuit, 51… First controller, 52… Second controller, 60… Voltage generation circuit, 61, 62, 63, 64, 75, 76, 95… External connection terminals, 71, 72… Power amplifier, 73, 74… Low-noise amplifier. 77, 78… Switching circuits; 79, 80, 81, 82… Phase-shifting circuits; 90… Module substrate; 90a, 90b… Main surface; 91… Integrated circuit; 91a… PR switching section; 91b… SC switching section; 91c1, 91c2… SM switching section; 91d1, 91d2… Voltage adjustment section; 91e… Digital control section; 92, 92A, 93… Wiring; 94… Resin components; 100, 100A… High-frequency module; 411A, 421A… Switching capacitor; 412A, 422A… Selector.

Claims

1. A high-frequency circuit, wherein, have: The first power amplifier is connected to the first antenna and is configured to amplify millimeter-wave signals; The second power amplifier is connected to a second antenna, which is different from the first antenna described above, and is configured to amplify the millimeter-wave signal described above. The voltage generation circuit is configured to generate multiple discrete voltages based on the input voltage. The first power supply modulation circuit is configured to selectively output one of the plurality of discrete voltages to the first power amplifier. as well as The second power supply modulation circuit is configured to selectively output one of the aforementioned discrete voltages to the aforementioned second power amplifier. The first power modulation circuit and the second power modulation circuit described above are configured to select the same voltage from the plurality of discrete voltages according to the first digital control signal.

2. The high-frequency circuit according to claim 1, wherein, The aforementioned first digital control signal is a digital control level signal based on the parallel data transmission standard.

3. The high-frequency circuit according to claim 1 or 2, wherein, The voltage generation circuit described above is configured to generate the aforementioned discrete voltages based on a second digital control signal based on a serial data transmission standard.

4. The high-frequency circuit according to any one of claims 1 to 3, wherein, The aforementioned high-frequency circuit also includes a first voltage adjustment circuit, which is connected between the first power modulation circuit and the first power amplifier, and is configured to adjust the voltage output from the first power modulation circuit.

5. The high-frequency circuit according to claim 4, wherein, The aforementioned first voltage adjustment circuit includes a first variable resistor.

6. The high-frequency circuit according to claim 4, wherein, The aforementioned first voltage adjustment circuit includes: The first switched capacitor is configured to generate a first plurality of voltages based on the voltage output from the first power modulation circuit; and The first selector is configured to select a first voltage from the first plurality of voltages generated by the first switched capacitor.

7. The high-frequency circuit according to any one of claims 4 to 6, wherein, The aforementioned high-frequency circuit also includes a second voltage adjustment circuit, which is connected between the second power modulation circuit and the second power amplifier, and is configured to adjust the voltage output from the second power modulation circuit.

8. The high-frequency circuit according to claim 7, wherein, The aforementioned second voltage adjustment circuit includes a second variable resistor.

9. The high-frequency circuit according to claim 7, wherein, The second voltage adjustment circuit mentioned above includes: The second switched capacitor is configured to generate a second plurality of voltages based on the voltage output from the second power modulation circuit; and The second selector is configured to select a second voltage from the second plurality of voltages generated by the second switched capacitor.

10. A high-frequency module, wherein, have: Module substrate; and The first integrated circuit and the second integrated circuit are disposed on the aforementioned module substrate. The aforementioned first integrated circuit includes: First external connection terminal and second external connection terminal; The third external connection terminal receives the first digital control signal; The first switching section includes at least one switch included in the voltage generation circuit, which is configured to generate multiple discrete voltages based on the input voltage. The second switching section includes at least one switch included in the first power modulation circuit, wherein the first power modulation circuit is configured to select a voltage from the plurality of discrete voltages and output it to the first external connection terminal. The third switching section includes at least one switch included in the second power modulation circuit, the second power modulation circuit being configured to select the same voltage from the plurality of discrete voltages and output it to the second external connection terminal; and The digital control unit is configured to control the second and third switching units according to the first digital control signal. The second integrated circuit mentioned above includes: The fourth external connection terminal is connected to the first external connection terminal mentioned above; The fifth external connection terminal is connected to the second external connection terminal mentioned above; The first power amplifier is configured to amplify a millimeter-wave signal using a voltage received from the first integrated circuit via the fourth external connection terminal, and is connected to the first antenna. as well as The second power amplifier is configured to amplify the millimeter-wave signal using a voltage received from the first integrated circuit via the fifth external connection terminal, and is connected to a second antenna that is different from the first antenna.

11. The high-frequency module according to claim 10, wherein, The second switching section is closer to the first power amplifier than the third switching section.

12. The high-frequency module according to claim 10 or 11, wherein, The third switch section is closer to the second power amplifier than the second switch section.

13. The high-frequency module according to any one of claims 10 to 12, wherein, The first power amplifier is closer to the second switch section than the second power amplifier.

14. The high-frequency module according to any one of claims 10 to 13, wherein, The second power amplifier is closer to the third switch section than the first power amplifier.

15. The high-frequency module according to any one of claims 10 to 14, wherein, The first external connection terminal is closer to the fourth external connection terminal than the second external connection terminal.

16. The high-frequency module according to any one of claims 10 to 15, wherein, The second external connection terminal is closer to the fifth external connection terminal than the first external connection terminal.

17. The high-frequency module according to any one of claims 10 to 16, wherein, The fourth external connection terminal is closer to the first external connection terminal than the fifth external connection terminal.

18. The high-frequency module according to any one of claims 10 to 17, wherein, The fifth external connection terminal is closer to the second external connection terminal than the fourth external connection terminal.

19. A magnification method, wherein, Multiple discrete voltages are generated based on the input voltage. Digital control signals are generated based on the envelope signal of millimeter-wave signals. The first power supply modulation circuit selects a voltage from the plurality of discrete voltages according to the aforementioned digital control signal and supplies it to the first power amplifier. The aforementioned first power amplifier amplifies the millimeter-wave signal and outputs it to the first antenna. The second power supply modulation circuit selects the same voltage from the plurality of discrete voltages according to the digital control signal and supplies it to the second power amplifier. The aforementioned second power amplifier amplifies the millimeter-wave signal and outputs it to the second antenna.

Images