Suction worktable for scriber, wafer suction control method and scriber

Abstract

The application relates to the technical field of wafer dicing, and provides an adsorption work disc for a dicing machine, a wafer adsorption control method and the dicing machine. The adsorption work disc comprises a disc body and a sealing support. The disc body comprises a base and an adsorption part. The adsorption part is located above the base and is connected with the base to form a gas guide channel. The adsorption part comprises a plurality of adsorption units. The adsorption units are communicated with the gas guide channel. An installation groove is arranged at the edge area of the adsorption part. The installation groove is arranged at the edge of the adsorption work disc, and the sealing support is arranged in the groove. The sealing support supports the edge of the wafer. The sealing support has certain flexibility. When the wafer is adsorbed, the edge of the wafer will not be warped due to the reverse abutting force. Meanwhile, a relatively closed space is formed between the wafer and the adsorption part of the adsorption work disc and the sealing support, so that the adsorption efficiency and adsorption effect of the adsorption units on the middle area of the wafer are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer dicing, and in particular to an adsorption work disc for a dicing machine, a wafer adsorption control method and a dicing machine. BACKGROUND

[0002] A wafer dicing machine is a semiconductor processing equipment that cuts wafers by high-speed rotation of a grinding wheel. Currently, the adsorption work disc used in the wafer dicing machine basically uses a flat adsorption work disc made of ceramic material. Such an adsorption work disc cannot adsorb warped wafers for processing. In order to realize subsequent processing, the back surface of the wafer is generally covered with a film, and a binding ring is used for processing. However, this method has very high requirements for the UV film and increases the cost of the film and the process. Moreover, it is still unable to effectively adsorb some silicon wafers with relatively high elasticity, resulting in the problem that the subsequent wafer dicing process cannot be performed or even if the wafer dicing process can be performed, the dicing precision is reduced due to uneven adsorption. SUMMARY

[0003] The present application provides an adsorption work disc for a dicing machine, a wafer adsorption control method and a dicing machine, so as to solve the problem that the adsorption work disc of the existing dicing machine cannot effectively adsorb warped wafers, thereby reducing the dicing precision.

[0004] In a first aspect, the present application provides an adsorption work disc for a dicing machine, comprising: a disc body and a sealing support; the disc body comprises a base and an adsorption part, the base is used for supporting and fixing the adsorption part, the adsorption part is located above the base and a gas guide channel is constructed between the adsorption part and the base, the adsorption part is used for drawing air outward through the gas guide channel to adsorb a wafer; a mounting groove is arranged at a region close to the edge of the adsorption part, the sealing support comprises a fixing part and a supporting part, the fixing part is used for mounting with the mounting groove, and the supporting part is used for contacting the back surface of the wafer, so that a sealed adsorption space is formed between the wafer, the sealing support and the adsorption part, and the adsorption space is used for being gradually compressed along with the deformation of the supporting part when air is drawn outward through the gas guide channel.

[0005] In a possible implementation, a valve is arranged at the bottom of the mounting groove, the valve is used for controlling the communication between the mounting groove and the gas guide channel; the adsorption part comprises a plurality of adsorption units, the adsorption units are in communication with the gas guide channel; when the pressure value in the gas guide channel reaches a preset pressure threshold, the valve is controlled to be opened, so that the adsorption units and the mounting groove simultaneously adsorb the wafer.

[0006] In a possible implementation, the air valves are evenly distributed along the bottom of the mounting groove; and / or, the air valves are configured to open when the vacuum degree in the adsorption space reaches a preset vacuum value.

[0007] In a possible implementation, the mounting groove is provided with a positioning groove near one side of the center of the adsorption part, the positioning groove extends downwardly and obliquely, and the fixing part is mounted in cooperation with the positioning groove.

[0008] In a possible implementation, the end surface of the supporting part away from the fixing part is a wedge-shaped surface, and the wedge-shaped surface is configured to be in contact with the back surface of the wafer.

[0009] In a possible implementation, the sealing support has an arc-shaped structure downwardly concave along the radial section of the adsorption part.

[0010] In a possible implementation, the height of the supporting part beyond the plane where the adsorption part is located is 2-4 mm; and / or, the elastic modulus of the sealing support is 0.3-1.0 MPa.

[0011] In a possible implementation, the nozzle aperture of the adsorption unit near the mounting groove is larger than the nozzle aperture of the remaining adsorption units.

[0012] In a second aspect, the present application further provides a wafer dicing machine, comprising the adsorption worktable as described in the first aspect.

[0013] In a third aspect, the present application further provides a wafer adsorption control method based on the adsorption worktable as described in the first aspect, comprising:

[0014] S100, controlling the adsorption part to adsorb the wafer;

[0015] S200, when the pressure value in the gas guide channel reaches a preset pressure threshold, controlling the air valve to open, so that the mounting groove and the adsorption part simultaneously adsorb the wafer.

[0016] In a fourth aspect, the present application further provides a processor configured to run a program, wherein the program is configured to execute the wafer adsorption control method as described in the third aspect when running.

[0017] The present application has at least the following technical effects:

[0018] The embodiment of the present application provides the adsorption work disc and the wafer adsorption control method for the scriber, the mounting groove is arranged at the edge of the adsorption work disc, and the sealing support is arranged in the groove, the sealing support can support the edge of the wafer, and the sealing support also has a certain flexibility, so that the wafer edge cannot be caused to have greater warping problems due to reverse abutting force while the wafer is adsorbed; meanwhile, the relatively closed space is formed between the wafer and the adsorption part of the adsorption work disc and the sealing support, so that the adsorption efficiency and the adsorption effect of the adsorption unit on the middle region of the wafer are improved, so that the subsequent wafer cutting precision is improved and the product yield is improved.

[0019] Further, the back surface of the wafer is adsorbed by the adsorption unit first, the sealing support is gradually bent downward to produce deformation and is accommodated in the mounting groove in the adsorption process, so that the wafer can be as close as possible to the surface of the adsorption part of the adsorption work disc, the mounting groove is closed or close to closed by the wafer in the wafer downward pressing process, so that the wafer is adsorbed by the mounting groove and the adsorption unit at the same time in the second adsorption period, and then the adsorption effect of the warped wafer edge is improved, and the adsorption flatness of the wafer is improved. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0021] Figure 1 The overall structure schematic diagram of the adsorption work disc provided by the embodiment of the present application is shown in the figure.

[0022] Figure 2 The adsorption work disc structure schematic diagram when the wafer is in the unadsorbed state provided by the embodiment of the present application is shown in the figure.

[0023] Figure 3 The partial enlarged structure schematic diagram of the adsorption work disc provided by the embodiment of the present application is shown in the figure. Figure 2

[0024] Figure 4 The adsorption work disc structure schematic diagram when the wafer is in the adsorbed state provided by the embodiment of the present application is shown in the figure.

[0025] Figure 5 The partial enlarged structure schematic diagram of the adsorption work disc provided by the embodiment of the present application is shown in the figure. Figure 4

[0026] Figure 6 ​​This is a schematic diagram of the specific structure of the sealing support provided in an embodiment of the present invention;

[0027] Figure 7 This is a schematic diagram of the overall structure of a dicing machine provided in an embodiment of the present invention;

[0028] Figure 8 A flowchart of a wafer adsorption control method provided in an embodiment of the present invention.

[0029] In the picture:

[0030] 100 - Adsorption working plate; 200 - Robotic arm;

[0031] 1-Wafer; 2-Mounting slot; 3-Gas channel; 4-Sealing support; 41-Fixing part; 42-Support part; 5-Gas channel; 6-Adsorption unit; 7-Valve; 8-Adsorption part; 9-Base. Detailed Implementation

[0032] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0034] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in this specification means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0035] Through research, it is found that the existing adsorption worktable of the dicing machine cannot adsorb and subsequent process the warped wafer, and the current solution is to cover the back of the wafer with a film and use a ring form for processing, but the requirement for the UV film is very high and the film cost and process are increased, and the wafer with large elasticity cannot be effectively adsorbed.

[0036] Therefore, the embodiments of the present application provide an adsorption worktable for a dicing machine, a wafer adsorption control method and a dicing machine, so that the adsorption worktable of the dicing machine can effectively adsorb the wafer with large warpage.

[0037] In combination with Figures 1 to 7 As shown in the drawings, the adsorption worktable 100 for the dicing machine provided by the embodiments of the present application can be used for adsorption and fixation of the wafer 1 and position calibration, and specifically includes: a disc body and a sealing support 4 arranged at the edge area of the disc body, the disc body includes a base 9 and an adsorption part 8, the adsorption part 8 is located above the base 9 and is supported and fixed by the base 9, the edge of the adsorption part 8 is connected with the inner side of the base 9 to form an integral structure, and the upper surface of the adsorption part 8 is used for placing and adsorbing the wafer 1, so as to facilitate subsequent wafer dicing process.

[0038] Specifically, a gas guide channel 3 is constructed between the adsorption part 8 and the base 9, the gas guide channel 3 is connected with an external vacuumizing device, and the adsorption unit 6 is in communication with the gas guide channel 3, so that the wafer 1 located on the base 9 can be adsorbed by the vacuumizing device.

[0039] Further, the area close to the edge of the adsorption part 8 is provided with a mounting groove 2, the mounting groove 2 is used for mounting and fixing the sealing support 4 and also serves as a containing space for the deformed sealing support 4, the sealing support 4 includes a fixed part 41 and a supporting part 42, the fixed part 41 is used for mounting with the mounting groove 2, and the supporting part 42 partially extends to the outside of the mounting groove 2 and is used for contacting the bottom of the wafer 1, so that a sealed adsorption space is formed between the wafer 1, the sealing support 4 and the adsorption part 8, and the warped wafer 1 can be effectively adsorbed subsequently. The adsorption space is used for being gradually compressed along with the deformation of the supporting part when the gas guide channel is externally evacuated, until the wafer is completely attached to the upper surface of the adsorption part or approaches the state of being completely flattened.

[0040] It should be noted that the width of the mounting groove 2 needs to be controlled within a preset range, and the size that is too large is not conducive to subsequent edge adsorption of the wafer 1, and the size that is too small cannot accommodate the deformed sealing support 4, thereby affecting the subsequent vacuumizing effect of the mounting groove 2.

[0041] The adsorption worktable 100 for the scriber provided by the embodiment is characterized in that: a mounting groove 2 is arranged at the edge of the adsorption worktable 100, and a sealing support 4 is arranged in the groove, the sealing support 4 can support the edge of the wafer 1 and has a certain flexibility, so that the wafer 1 will not be warped by the reverse abutting force when being adsorbed; meanwhile, a relatively closed space is formed between the wafer 1 and the adsorption part 8 of the adsorption worktable 100 and the sealing support 4, which is conducive to improving the adsorption efficiency and effect of the adsorption unit 6 on the middle region of the wafer 1.

[0042] In some embodiments, referring to Figures 2 to 4 , the bottom of the mounting groove 2 is provided with a gas valve 7, which controls the communication between the mounting groove 2 and the gas guide channel 3; the adsorption part 8 includes a plurality of adsorption units 6, which can be uniformly distributed in the adsorption part 8 or specially distributed according to the adsorption requirements.

[0043] When in the initial stage (i.e. the first adsorption period), the wafer 1 is warped at the edge, and only the adsorption unit 6 is used to adsorb the wafer 1 to cause the first deformation of the support part 42; when the pressure value in the gas guide channel 3 reaches the preset pressure threshold value (the second adsorption period), the gas valve 7 is opened, and the adsorption unit 6 and the mounting groove 2 are used to adsorb simultaneously to cause the second deformation of the support part 42. It can be understood that the bending degree of the second deformation of the support part 42 is greater than that of the first deformation.

[0044] Optionally, in order to improve the adsorption effect of the wafer 1 edge by the mounting groove 2, the number of gas valves 7 can be multiple, and they are uniformly distributed along the bottom of the mounting groove 2 and at the edge of the base 9.

[0045] Optionally, considering the limited space of the groove bottom of the mounting groove 2, the gas valve 7 of the embodiment is automatically opened when the vacuum degree in the adsorption space reaches the preset vacuum value, and the specific preset vacuum value is preferably the pressure value corresponding to the end of the first adsorption period, so that the smooth connection of the two adsorption periods can be ensured, which is conducive to further improving the adsorption efficiency and effect of the wafer 1.

[0046] Optionally, the gas valve 7 can also be a micro gas valve, and the controller is electrically connected with each micro gas valve, so as to control the opening of each micro gas valve when the second adsorption period is opened. It should be noted that a pressure detection sensor (electrically connected with the controller) can be arranged to detect the vacuum degree or pressure in the adsorption space when the second adsorption period is opened. When the pressure value in the gas guide channel 3 reaches the preset pressure threshold, the controller controls the gas valve 7 to open, so as to determine the adsorption condition of the center area of the wafer 1 (the greater the pressure value, the easier the wafer 1 is adsorbed and adheres to the base 9) through the detection value, so that the edge and the center area of the adsorption worktable are synchronously adsorbed.

[0047] Optionally, a gas guide groove 5 is arranged at a position close to the mounting groove 2 of the adsorption part 8, and the gas guide groove 5 is in communication with the adsorption unit 6 at the edge of the adsorption part 8, so as to improve the adsorption force on the adsorption space close to the sealing support 4, and ensure the rapid adsorption of the edge of the wafer 1.

[0048] In this embodiment, the back surface of the wafer 1 is first adsorbed by the adsorption unit 6. During the adsorption process, the wafer 1 is pressed downward to make the sealing support 4 gradually bend and deform, and be accommodated in the mounting groove 2, so that the wafer 1 can be as close as possible to the surface of the adsorption part 8 of the adsorption worktable 100. In the process of pressing the wafer 1 downward, the wafer 1 closes or nearly closes the slot of the mounting groove 2, which is conducive to the adsorption of the wafer 1 by the mounting groove 2 and the adsorption unit 6 at the same time in the second adsorption period, thereby improving the adsorption effect of the edge of the wafer 1.

[0049] Optionally, the mounting groove 2 is provided with a positioning groove at a side close to the center of the adsorption part 8, and the cross section of the mounting groove 2 along the radial direction of the adsorption part 8 is an inclined annular groove structure. The annular groove structure extends downward from the side close to the positioning groove to the side close to the center of the adsorption part 8. The fixing part 41 of the sealing support 4 is used for cooperating with the positioning groove for installation, and can also ensure the sealing effect between the sealing support 4 and the adsorption part 8.

[0050] Optionally, the inclination angle of the cross section of the sealing support 4 along the radial direction is in the range of 25° to 30° (an excessively large inclination angle is easy to collapse, an excessively small inclination angle is not flexible enough, and an excessively large upward abutting force is not conducive to the adsorption of the edge of the wafer 1). In this way, the quick cooperation and installation of the sealing member and the annular groove structure can be ensured, and the installation stability of the two can be improved. At the same time, the sealing support 4 arranged in an inclined manner can support the support part 42 at the upper end of the sealing support 4, so as to keep the support part 42 in a non-collapsed state, thereby ensuring the complete contact with the adsorbed workpiece.

[0051] Optionally, the end face of the supporting part 42 away from the fixed part 41 is a wedge-shaped face, which can be in contact with the back face of the wafer 1 when tilted, so that the face contact of the wedge-shaped face is more conducive to improving the sealing performance in the whole adsorption space than the point contact, so as to improve the sealing effect, and at the same time, the contact area of the wafer 1 and the sealing support 4 is not too large, the sealing effect is ensured, and the abutting force of the sealing support 4 on the wafer 1 is reduced, so as to avoid that the abutting force is too large to increase the warping deformation of the wafer 1.

[0052] Optionally, the radial cross section of the sealing support 4 along the adsorption part 8 is an arc structure concave downward, so as to ensure that the abutting force is always controlled within a reasonable range, and further reduce the warping deformation of the wafer 1.

[0053] Optionally, the height of the supporting part 42 beyond the plane where the adsorption part 8 is located is 2-4 mm, which is conducive to ensuring the sealing support effect while reasonably controlling the abutting force on the edge of the wafer 1.

[0054] Optionally, the elastic modulus of the sealing support 4 is 0.3-1.0 MPa, and the elastic modulus is too small, which is too soft and not enough support, and the elastic modulus is too large, which is not easy to deform, so it is not easy to adsorb, and it is easy to cause the wafer 1 to deform too much.

[0055] In some embodiments, in order to increase the adsorption force of the edge of the wafer 1, the nozzle diameter of the adsorption unit 6 is designed differently, that is, the nozzle aperture of the adsorption unit 6 close to the mounting groove 2 is larger than the nozzle aperture of the remaining adsorption units 6, so as to more conducive to improve the adsorption force of the edge region of the wafer 1, thereby facilitating the subsequent wafer 1 processing precision.

[0056] Based on the same inventive concept, as shown in Figure 7 The wafer cutting machine is provided with the adsorption work disc 100, the mechanical arm 200 takes out the wafer 1 from the magazine and places it on the adsorption work disc 100, and the wafer 1 is adsorbed and flattened by the adsorption work disc 100, so as to avoid the problem that the adsorption is invalid or not flat due to the warping of the wafer 1, thereby affecting the subsequent cutting precision of the wafer.

[0057] The dicing machine provided in this embodiment includes the adsorption working disk 100 of the aforementioned embodiment. By setting the mounting groove 2 on the edge of the adsorption working disk 100 and setting the sealing support 4 in the groove, the sealing support 4 can support the edge of the wafer 1 and also has a certain degree of flexibility. When the wafer 1 is adsorbed, it will not cause the edge of the wafer 1 to warp more due to the reverse contact force. At the same time, since a relatively closed space is formed between the wafer 1, the adsorption part 8 of the adsorption working disk 100 and the sealing support 4, it is beneficial to improve the adsorption efficiency and adsorption effect of the adsorption unit 6 on the middle area of ​​the wafer 1.

[0058] It should be noted that the adsorption working plate in the embodiments of the present invention can also be used in other semiconductor processing equipment such as wafer grinding machines, which will not be listed here.

[0059] Based on the same inventive concept, such as Figure 8 As shown, this embodiment of the invention also provides a wafer adsorption control method, based on the adsorption work disk 100 as described in the foregoing embodiments, the wafer adsorption control method comprising:

[0060] S100 controls the adsorption unit 8 to adsorb the wafer 1.

[0061] Specifically, in the initial stage of wafer 1 adsorption (the first adsorption period), in order to ensure the adsorption force of wafer 1, adsorption is performed only on the back side of wafer 1 through adsorption unit 6. Since an adsorption space is formed between the sealing support 4, wafer 1, and base 9, it is beneficial to improve the adsorption efficiency and adsorption effect during this period. In this case, adsorption through adsorption unit 6 can be understood as each adsorption unit 6 being activated or working when a vacuum is drawn outward through the gas guide channel 3, so that the gas in the adsorption space is discharged outward through the gas guide channel 3. Under the action of adsorption force and its own gravity, wafer 1 gradually adheres to base 9. However, considering the warping of the edge of wafer 1, the edge of wafer 1 cannot completely adhere to base 9 at this stage.

[0062] S200, when the pressure value in the air guide channel 3 reaches the preset pressure threshold, the control valve 7 is opened so that the mounting groove 2 and the adsorption part 8 can simultaneously adsorb the wafer 1.

[0063] Specifically, after the adsorption of the first adsorption period is completed, the support part 42 of the sealing support 4 is deformed. Under the action of its own gravity, the adsorption force of the middle area and the abutment force of the edge support part 42, it gradually reaches a balance. In order to ensure that the edge of the wafer 1 is adsorbed more smoothly, the valve 7 at the bottom of the mounting groove 2 will be opened during the second adsorption period. Since the groove opening of the mounting groove 2 is basically covered by the wafer 1 at this time, the area of ​​the mounting groove 2 also forms another relatively closed adsorption space. Thus, the wafer 1 is adsorbed by the mounting groove 2 and the adsorption unit 6 at the same time, ensuring the adsorption effect of the warped wafer 1.

[0064] The wafer adsorption control method provided by the embodiment of the present application adopts the adsorption work disc 100 with the mounting groove 2 at the edge and the mounting groove 2 and the adsorption part 8 can communicate with the air guide channel 3, and the sealing support 4 is arranged in the groove, so that the wafer 1 is adsorbed without causing greater warping problem of the edge of the wafer 1 due to the reverse abutting force, and the relatively closed space is formed between the wafer 1 and the adsorption part 8 of the adsorption work disc 100 and the sealing support 4, which is beneficial to improve the adsorption efficiency and adsorption effect of the adsorption unit 6 on the middle region of the wafer 1, and when the pressure value in the air guide channel 3 reaches the preset pressure threshold value, the control valve 7 is opened to enable the mounting groove 2 and the adsorption part 8 to adsorb the wafer 1 at the same time, thereby improving the adsorption effect of the warped wafer 1 edge and enabling the whole wafer 1 to be adsorbed stably and flatly on the adsorption work disc 100.

[0065] Based on the same inventive concept, the embodiment of the present application further provides a processor for running a program, and those skilled in the art can understand that all or part of the steps in the wafer adsorption control method of the above embodiment can be completed by the program instruction related hardware, and the program can be stored in a computer readable storage medium, including ROM / RAM, magnetic disc, optical disc, etc. The program is used to execute the wafer adsorption control method as described in the above embodiment when running, and the specific steps of the wafer adsorption control method refer to steps S100-S200 in the above embodiment, which will not be repeated here.

[0066] Those skilled in the art can understand that the steps, measures and schemes in various operations, methods and processes discussed in the present application can be alternated, changed, combined or deleted. Further, other steps, measures and schemes in various operations, methods and processes discussed in the present application can also be alternated, changed, rearranged, decomposed, combined or deleted. Further, the steps, measures and schemes in various operations, methods and processes in the prior art can also be alternated, changed, rearranged, decomposed, combined or deleted.

[0067] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0068] The terms "first", "second", etc. are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implying a number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0069] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific situation.

[0070] In the description of the present application, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. It should be understood that although each step in the flowchart of the drawings is displayed in sequence according to the arrow, these steps are not necessarily executed in sequence according to the arrow. Unless otherwise specified herein, the execution of these steps is not strictly limited in sequence, and they can be executed in other order. Moreover, at least part of the steps in the flowchart of the drawings can include multiple sub-steps or multiple time periods, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence is not necessarily sequential, but can be alternately or alternately executed with other steps or sub-steps or time periods of other steps.

[0071] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An adsorption working disc for a dicing machine, characterized in that, Includes: disc body and sealing support components; The disk body includes a base and an adsorption part. The base is used to support and fix the adsorption part. The adsorption part is located on the base and forms a gas guiding channel with the base. The adsorption part is used to draw air outward through the gas guiding channel to adsorb the wafer. The adsorption part is provided with an installation groove near the edge. The sealing support includes a fixing part and a supporting part. The fixing part is used to cooperate with the installation groove for installation. The supporting part is used to contact the back side of the wafer so that a sealed adsorption space is formed between the wafer, the sealing support and the adsorption part. The adsorption space is used to be gradually compressed as the supporting part deforms when the gas guide channel draws air outward. A valve is provided at the bottom of the mounting slot, which is used to control the connection between the mounting slot and the air guide channel; the adsorption unit includes multiple adsorption units, which are connected to the air guide channel; when the pressure value in the air guide channel reaches a preset pressure threshold, the valve is controlled to open, so that the adsorption unit and the mounting slot can simultaneously adsorb the wafer. The end face of the support portion away from the fixing portion is a wedge-shaped surface, which is used to fit and contact the back side of the wafer; and a gas guide groove is provided in the adsorption portion near the mounting groove, which is connected to the adsorption unit at the outermost edge of the adsorption portion.

2. The adsorption working disc for a dicing machine according to claim 1, characterized in that, The valves are evenly distributed along the bottom of the mounting groove; and / or, the valves are used to open when the vacuum level in the adsorption space reaches a preset vacuum value.

3. The adsorption working disc for a dicing machine according to claim 1, characterized in that, A positioning groove is provided on the side of the mounting groove near the center of the adsorption part. The positioning groove extends downward at an angle, and the fixing part is installed in conjunction with the positioning groove.

4. The adsorption working disc for a dicing machine according to claim 3, characterized in that, The sealing support has a downwardly concave arc-shaped structure along the radial section of the adsorption part.

5. The adsorption working disc for a dicing machine according to claim 1, characterized in that, The height of the support portion extending beyond the plane of the adsorption portion is 2~4mm; and / or the elastic modulus of the sealing support is 0.3~1.0 MPa.

6. The adsorption working disc for a dicing machine according to claim 1, characterized in that, The nozzle orifice diameter of the adsorption unit closest to the mounting groove is larger than that of the nozzle orifice diameter of the other adsorption units.

7. A dicing machine, characterized in that, include: The adsorption working disc for a dicing machine as described in any one of claims 1 to 6.

8. A wafer adsorption control method, based on the adsorption working tray for a dicing machine as described in any one of claims 1 to 6, characterized in that, include: S100 controls the adsorption section to adsorb the wafer; S200, when the pressure value in the air guide channel reaches the preset pressure threshold, the air valve is opened so that the mounting groove and the adsorption part can simultaneously adsorb the wafer.

9. A processor, characterized in that, The processor is used to run a program, wherein the program, when running, is used to execute the wafer adsorption control method as described in claim 8.

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