Field effect transistor quality detection system and equipment thereof

Abstract

The invention belongs to the technical field of transistor detection, and particularly relates to a field effect transistor quality detection system and equipment thereof.The system comprises a transistor scanning module, a structural reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality evaluation decision module and an interaction alarm end; according to the invention, the structural reliability analysis module analyzes based on the transistor image to assess the structural reliability of the field effect transistor, and generates various excitation signals suitable for field effect transistor detection when generating the structural reliability signal; the intelligent feature analysis module collects various electrical parameters and non-electrical parameters of the field effect transistor under signal excitation and performs deep analysis, and performs comprehensive and objective quality evaluation on the field effect transistor according to an analysis report in combination with a preset quality standard and an evaluation model, so that comprehensive, efficient and accurate detection on the field effect transistor is realized, and the detection accuracy is improved. And the quality detection level and the production efficiency can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of transistor detection technology, and in particular to a field effect transistor quality detection system and equipment thereof. BACKGROUND

[0002] A field effect transistor is a semiconductor device that uses the electric field effect to control the current size, mainly having three electrodes, namely the source electrode, the gate electrode and the drain electrode, and its core structure is to form a conductive channel on a semiconductor substrate through a specific process, and the on-off and size of the current in the channel are controlled by the gate voltage. As a key component in electronic circuits, the quality of the field effect transistor directly affects the performance and stability of the entire electronic system. A transistor parameter intelligent detection system based on a single-chip microcomputer is disclosed in Chinese patent CN113805030A. The technical solution of the invention only needs to insert the detected triode into three plug-in interfaces during operation. The single-chip microcomputer module controls three plug-in circuits respectively, and each two-way conduction is tested on the three electrodes of the triode multiple times. The voltage drop analog signals of the corresponding two electrodes are AD converted by the analog-to-digital conversion module. The judgment unit can judge the type and electrode distribution position of the triode and output the detection data to the display unit, which brings convenience to the detection personnel and improves the detection efficiency. However, the above-mentioned invention technical solution only focuses on the detection of transistor electrical parameters, and cannot combine structural reliability detection and multi-performance characteristic detection to gradually and comprehensively evaluate the quality status of the field effect transistor. Moreover, it cannot reasonably judge the production control status of the field effect transistor and timely alarm, which is not conducive to ensuring the production detection efficiency of the field effect transistor and improving the product quality, and the intelligentization and automation level needs to be improved. In view of the above technical defects, a solution is proposed. SUMMARY

[0003] The present application aims to provide a field effect transistor quality detection system and equipment thereof, which solves the problem that the prior art cannot effectively combine structural reliability detection and multi-performance characteristic detection to gradually and comprehensively evaluate the quality status of the field effect transistor, and cannot reasonably judge the production control status of the field effect transistor and timely alarm, which is not conducive to ensuring the production detection efficiency of the field effect transistor and improving the product quality, and the intelligentization and automation level is low.

[0004] To achieve the above-mentioned purpose, the present application provides the following technical solutions: The application discloses a field effect transistor quality detection system, which comprises a transistor scanning module, a structure reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality evaluation decision module and an interactive alarm end; the transistor scanning module performs appearance scanning on the field effect transistor and sends the transistor image obtained through the scanning to the structure reliability analysis module; the structure reliability analysis module analyzes based on the transistor image to evaluate the structure reliability of the field effect transistor, generates a structure reliable signal or a structure unreliable signal according to the evaluation result, and sends the structure unreliable signal to the interactive alarm end. When the structure reliable signal is generated, the signal excitation generation module generates a plurality of excitation signals suitable for the detection of the field effect transistor, and excites different performance characteristics of the field effect transistor; the intelligent feature analysis module collects a plurality of electrical parameters and non-electrical parameters of the field effect transistor under the signal excitation, deeply analyzes the collected data, and extracts key performance characteristics of the field effect transistor; the transistor quality evaluation decision module comprehensively evaluates the quality of the field effect transistor according to the analysis report provided by the intelligent feature analysis module, combines a preset quality standard and an evaluation model, and sends a transistor quality detection report to the interactive alarm end.

[0005] Further, the signal excitation generation module determines the required excitation signal type according to the type and detection requirement of the field effect transistor, controls the frequency, amplitude and duty cycle parameters of the signal through an internal signal generation circuit and in combination with a digital signal processing technology, and outputs the excitation signal generated after amplification and buffering to the intelligent feature analysis module.

[0006] Further, the intelligent feature analysis module is used for receiving the excitation signal output by the signal excitation generation module and applying the excitation signal to the field effect transistor to be detected, and collecting various parameters of the field effect transistor in real time by using a high-precision sensor and a collection circuit; wherein the collected electrical parameters include a drain current, a source voltage, a gate voltage and a transconductance, and the non-electrical parameters include a temperature and a packaging stress, and the collected multi-parameter data are subjected to analog-digital conversion.

[0007] Further, the intelligent feature analysis module is further used for performing data preprocessing on the collected multi-parameter data, including data calibration and noise removal operations, and performing feature extraction on the processed data by using a signal processing algorithm and a machine learning technology; after the feature extraction and analysis, an analysis report containing key performance characteristics is generated and transmitted to the transistor quality evaluation decision module.

[0008] Further, the specific operation process of the transistor quality evaluation decision module is as follows: The analysis report generated by the intelligent feature analysis module is received, compared with the preset quality standard stored internally, and each performance feature of the field effect transistor is weighted and scored by establishing a multi-parameter comprehensive evaluation model to calculate a comprehensive quality score; According to the comprehensive quality score, the field effect transistor is divided into different quality grades, including qualified products, substandard products and waste products, and a detailed detection report is generated according to the evaluation result, including the quality grade, the evaluation situation of each performance index and the existing problems and suggestions.

[0009] Further, the specific analysis process of the structure reliability analysis module includes: The transistor image is acquired and compared with the corresponding standard image for contour coincidence, and the contour coincidence of the field effect transistor is collected, and the contour coincidence is compared with the preset contour coincidence threshold value. If the contour coincidence does not exceed the preset contour coincidence threshold value, a structure unreliable signal of the corresponding field effect transistor is generated. If the contour coincidence exceeds the preset contour coincidence threshold value, a defect recognition decision analysis is performed.

[0010] Further, the specific analysis process of the defect recognition decision analysis is as follows: Based on the transistor image, the defects existing on the surface of the field effect transistor are captured, and the detection data of each parameter of the corresponding defect is collected. The detection data of each parameter is compared with the corresponding preset data safety threshold value. If there is a parameter whose detection data exceeds the corresponding preset data safety threshold value, the corresponding defect is marked as a fatal defect. If there is a fatal defect on the field effect transistor, a structure unreliable signal of the corresponding field effect transistor is generated; If there is no fatal defect on the field effect transistor, a plurality of sub-inspection areas are set on the field effect transistor. If there is a defect in the corresponding sub-inspection area, the corresponding sub-inspection area is marked as a risk area. The number of risk areas on the field effect transistor is acquired and compared with the number of sub-inspection areas to obtain a risk detection value. The risk detection value is compared with a preset risk detection threshold value. If the risk detection value exceeds the preset risk detection threshold value, a structure unreliable signal of the corresponding field effect transistor is generated; If the risk detection value does not exceed the preset risk detection threshold value, the aggregation area of the risk area on the field effect transistor is acquired, and the corresponding aggregation area is marked as a target area. The number of risk areas involved in the corresponding target area is acquired and marked as a risk aggregation value. The risk aggregation value is compared with a preset risk aggregation threshold value. If the risk aggregation value exceeds the preset risk aggregation threshold value, the corresponding target area is marked as an aggregation hidden danger area; The number of the gathered hidden danger areas on the corresponding field effect transistor is obtained and marked as a gathered hidden danger value, and the maximum value of the gathered hidden danger value is marked as a surface danger gathering value. The structure reliability influence value is calculated by weighted summation of the surface danger detection value, the gathered hidden danger value and the surface danger gathering value. The structure reliability influence value is compared with the preset structure reliability influence threshold value. If the structure reliability influence value exceeds the preset structure reliability influence threshold value, the structure unreliable signal of the corresponding field effect transistor is generated. If the structure reliability influence value does not exceed the preset structure reliability influence threshold value, the structure reliable signal of the corresponding field effect transistor is generated.

[0011] Further, the structure reliability analysis module and the transistor quality evaluation decision module are both communicatively connected to the transistor production strategy analysis module. The structure reliability analysis module sends the structure reliable signal or the structure unreliable signal of the corresponding field effect transistor to the transistor production strategy analysis module. The transistor quality evaluation decision module sends the transistor quality detection report to the production strategy analysis module. The transistor production strategy analysis module is used for setting a detection period. The production status of the field effect transistor in the detection period is analyzed. The production control qualified signal or the production control abnormal signal is generated by the analysis. The production control qualified signal or the production control abnormal signal is sent to the background management end. When the background management end receives the production control abnormal signal, the corresponding early warning is sent out.

[0012] Further, the specific analysis process of the transistor production strategy analysis module is as follows: The number of the field effect transistors corresponding to the structure unreliable signal produced in the detection period and the number of the field effect transistors not evaluated as qualified products are obtained. The transistor inferiority value is calculated by summation of the two values. The transistor inferiority value is compared with the total number of the field effect transistors produced in the detection period. The transistor inferiority value is compared with the preset transistor inferiority threshold value. If the transistor inferiority value exceeds the preset transistor inferiority threshold value, the production control abnormal signal is generated. If the transistor inferiority value exceeds the preset transistor inferiority threshold value, all faults occurring in the production process of the field effect transistor in the detection period are obtained. The solution time of the corresponding fault is compared with the corresponding preset solution time threshold value. If the solution time exceeds the corresponding preset solution time threshold value, the non-timely symbol XW-1 is given to the corresponding fault. The total number of faults occurring in the field effect transistor production process in the detection period is obtained and marked as a fault frequency value, and the number of times of generating the non-timely symbol XW-1 in the detection period is marked as a recovery delay value; and the recovery time is calculated by ratio with the corresponding preset recovery time threshold to obtain a recovery time value, and the average value of all recovery time values in the detection period is calculated to obtain a recovery table value; the fault frequency value, the recovery delay value and the recovery table value are weighted and summed to obtain a production strategy influence value, and the production strategy influence value is compared with the preset production strategy influence threshold value, if the production strategy influence value exceeds the preset production strategy influence threshold value, a production control abnormal signal is generated; if the production strategy influence value does not exceed the preset production strategy influence threshold value, a production control qualified signal is generated.

[0013] Further, the present application also proposes a field effect transistor quality detection equipment, which adopts the field effect transistor quality detection system described above.

[0014] Compared with the prior art, the present application has the following advantages: 1、In the present application, the structure reliability analysis module analyzes the transistor image to evaluate the structure reliability of the field effect transistor, generates a plurality of excitation signals suitable for field effect transistor detection when generating a structure reliability signal, collects a plurality of electrical parameters and non-electrical parameters of the field effect transistor under signal excitation and deeply analyzes, evaluates the quality of the field effect transistor according to the analysis report and combines the preset quality standard and evaluation model, realizes comprehensive, efficient and accurate detection of the field effect transistor, and has high automation level; 2、In the present application, the transistor production strategy analysis module analyzes the production status of the field effect transistor in the detection period, generates a production control qualified signal or a production control abnormal signal through analysis, and makes the background management end issue a corresponding early warning when generating a production control abnormal signal, to remind the background management personnel to timely adjust the production control scheme of the field effect transistor, strengthen the subsequent production supervision, ensure the stability and quality of the subsequent production, and have high intelligent level. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to facilitate those skilled in the art to understand, the present application will be further described below with reference to the drawings; Figure 1 The system block diagram of example one in the present application; Figure 2 The system block diagram of example two in the present application. DETAILED DESCRIPTION

[0016] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0017] Example 1: As Figure 1 As shown, the present invention proposes a field-effect transistor quality testing system and device, including a transistor scanning module, a structural reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality assessment decision module, and an interactive alarm terminal; and the present invention also proposes a field-effect transistor quality testing device, which adopts the above-mentioned field-effect transistor quality testing system. In detail, the transistor scanning module performs an external scan of the field-effect transistor and sends the scanned transistor image to the structural reliability analysis module; the structural reliability analysis module analyzes the transistor image to evaluate the structural reliability of the field-effect transistor, and generates a structurally reliable signal or a structurally unreliable signal accordingly, and sends the structurally unreliable signal to the interactive alarm terminal. When the interactive alarm terminal receives a structural unreliability signal, it issues a corresponding warning, enabling accurate judgment of the surface condition of the field-effect transistor. Furthermore, when a structural unreliability signal is generated, it reminds inspection personnel not to perform subsequent quality inspection operations on the field-effect transistor, avoiding unnecessary waste of manpower, resources, and funds. The specific analysis process of the structural reliability analysis module is as follows: The transistor image is acquired and its contour is compared with the corresponding standard image. The contour overlap of the field-effect transistor is collected accordingly. The contour overlap is compared with a preset contour overlap threshold. If the contour overlap does not exceed the preset contour overlap threshold, it indicates that the size contour of the corresponding field-effect transistor does not meet the standard, and a structural unreliable signal of the corresponding field-effect transistor is generated. If the contour overlap exceeds the preset contour overlap threshold, the defects (including scratches, pinholes, etc.) existing on the surface of the field-effect transistor are captured based on the transistor image, and the detection data of various parameters of the corresponding defects (such as the length, width, depth, etc. of the scratch) are collected. The detection data of each parameter are compared with the corresponding preset data safety threshold. If any parameter in the test data exceeds the corresponding preset data safety threshold, it indicates that the corresponding defect has a significant adverse impact on the performance and quality of the field-effect transistor, and the corresponding defect is marked as a fatal defect; if a fatal defect exists on the field-effect transistor, it indicates that the structural reliability of the corresponding field-effect transistor is poor, and a structural unreliable signal for the corresponding field-effect transistor is generated. If there is no fatal defect on the field effect transistor, a plurality of sub-detection areas are set on the field effect transistor, and if a defect is involved in a corresponding sub-detection area, the corresponding sub-detection area is marked as a risk area; the number of risk areas on the field effect transistor is obtained and a risk detection value is calculated by ratio calculation of the number of sub-detection areas; the risk detection value is compared with a preset risk detection threshold value, and if the risk detection value exceeds the preset risk detection threshold value, it indicates that the structure reliability of the corresponding field effect transistor is poor, and a structure unreliable signal of the corresponding field effect transistor is generated; If the risk detection value does not exceed the preset risk detection threshold value, an aggregation area of the risk area on the field effect transistor is obtained, and the corresponding aggregation area is marked as a target area; the number of risk areas involved in the corresponding target area is obtained and marked as a risk aggregation value, and the risk aggregation value is compared with a preset risk aggregation threshold value, and if the risk aggregation value exceeds the preset risk aggregation threshold value, the corresponding target area is marked as an aggregation hidden danger area; the number of aggregation hidden danger areas on the corresponding field effect transistor is obtained and marked as an aggregation hidden danger value, and the largest risk aggregation value is marked as a risk aggregation amplitude value; The structure reliable influence value is calculated by weighted summation of the risk detection value, the aggregation hidden danger value and the risk aggregation amplitude value, that is, the corresponding preset weight coefficients are respectively assigned to the risk detection value, the aggregation hidden danger value and the risk aggregation amplitude value, and the risk detection value, the aggregation hidden danger value and the risk aggregation amplitude value are respectively multiplied by the corresponding preset weight coefficients, and the sum of the three groups of product results is marked as the structure reliable influence value; it should be noted that the larger the value of the structure reliable influence value, the worse the comprehensive structure reliability of the corresponding field effect transistor; The structure reliable influence value is compared with a preset structure reliable influence threshold value, and if the structure reliable influence value exceeds the preset structure reliable influence threshold value, it indicates that the comprehensive structure reliability of the corresponding field effect transistor is poor, and a structure unreliable signal of the corresponding field effect transistor is generated; if the structure reliable influence value does not exceed the preset structure reliable influence threshold value, it indicates that the comprehensive structure reliability of the corresponding field effect transistor is good, and a structure reliable signal of the corresponding field effect transistor is generated.

[0018] In generating the structure reliable signal, the signal excitation generation module generates a plurality of excitation signals suitable for field effect transistor detection, excites different performance characteristics of the field effect transistor, can generate excitation signals of multiple types and adjustable parameters, meets the needs of different field effect transistors and detection items, provides rich signal conditions for comprehensive detection of the performance of the field effect transistor, and improves the comprehensiveness and accuracy of the detection; It should be noted that the signal excitation generation module determines the required excitation signal type, such as square wave signal, sine wave signal, pulse signal, etc., according to the type of field effect transistor and the detection requirement, accurately controls the frequency, amplitude and duty cycle of the signal through the internal signal generation circuit and combined with digital signal processing technology; the generated excitation signal is amplified and buffered, and then output to the intelligent feature analysis module; For example, when detecting the switching characteristics of the field effect transistor, a square wave signal with a specific frequency and amplitude is generated to simulate the switching control signal in the actual circuit; when detecting the frequency response characteristics, different frequency sine wave signals are generated to gradually scan the frequency range and observe the response of the field effect transistor to different frequency signals.

[0019] The intelligent feature analysis module collects various electrical and non-electrical parameters of the field effect transistor under signal excitation, deeply analyzes the collected data, and extracts the key performance characteristics of the field effect transistor. Not only can it collect multiple parameters of the field effect transistor at the same time, fully reflect the performance state of the device under different working conditions, provide rich data support for accurate quality evaluation, avoid the limitations of single parameter detection, but also can accurately extract the key performance characteristics of the field effect transistor, provide scientific and objective basis for quality evaluation, and improve the accuracy and reliability of quality evaluation; It should be noted that the intelligent feature analysis module is used to receive the excitation signal output by the signal excitation generation module and apply it to the field effect transistor to be detected, and use high-precision sensors and acquisition circuits to collect various parameters of the field effect transistor in real time, and perform analog-to-digital conversion on the collected multi-parameter data. Among them, the collected electrical parameters include drain current, source voltage, gate voltage and transconductance, etc. Through high-precision current sensors and voltage sensors, the current and voltage signals are converted into digital signals, and amplified and filtered to improve the signal-to-noise ratio and accuracy. Non-electrical parameters such as temperature and packaging stress are collected by temperature sensors and stress sensors. The temperature sensor monitors the temperature change of the field effect transistor in real time, and the stress sensor detects the influence of the stress generated during packaging on the performance of the device.

[0020] Furthermore, the intelligent feature analysis module is used to preprocess the collected multi-parameter data, including data calibration and noise removal, to improve data quality and reliability. Then, signal processing algorithms and machine learning techniques are used to extract features from the processed data. For example, by analyzing the drain current versus time curve, feature parameters such as rise time, fall time, and overshoot are extracted to evaluate the switching speed and dynamic characteristics of the field-effect transistor (FET). Analysis of the transconductance versus gate voltage curve determines its maximum value, linearity, and other characteristics, reflecting the gain characteristics of the FET. Simultaneously, this module also combines non-electrical parameters such as temperature and stress to analyze their impact on electrical parameters, comprehensively evaluating the performance stability of the FET under different environmental conditions. After feature extraction and analysis, an analysis report containing key performance characteristics is generated and transmitted to the transistor quality assessment decision module.

[0021] The transistor quality assessment decision module, based on the analysis report provided by the intelligent feature analysis module and combined with preset quality standards and assessment models, comprehensively evaluates the quality of field-effect transistors (FETs) and sends the transistor quality inspection report to the interactive alarm terminal. This allows for a comprehensive and objective quality assessment of FETs according to preset quality standards and assessment models, facilitating targeted improvement measures for quality control during the production process and contributing to improved overall product quality and market competitiveness. The specific operation process of the transistor quality assessment decision module is as follows: The system receives the analysis report generated by the intelligent feature analysis module and compares it with the preset quality standards stored internally. It should be noted that these quality standards are formulated based on the application scenarios and performance requirements of the field-effect transistor and cover multiple indicators such as switching characteristics, gain characteristics, and stability. By establishing a multi-parameter comprehensive evaluation model, the system performs weighted scoring on various performance characteristics of the field-effect transistor and calculates the comprehensive quality score. Based on the comprehensive quality score, field-effect transistors are classified into different quality levels, including qualified products, substandard products, and scrap products. Detailed test reports are generated based on the evaluation results, including the quality level, the evaluation of various performance indicators, and possible problems and suggestions, providing a reference for production and use.

[0022] Example 2: Figure 2 As shown, the difference between this embodiment and Embodiment 1 is that both the structural reliability analysis module and the transistor quality assessment decision module are communicatively connected to the transistor production strategy analysis module. The structural reliability analysis module sends the structural reliability signal or structural unreliability signal of the corresponding field-effect transistor to the transistor production strategy analysis module, and the transistor quality assessment decision module sends the transistor quality inspection report to the production strategy analysis module. The transistor production strategy analysis module is used to set a detection period, analyze the production status of the field effect transistor in the detection period, generate a production control qualified signal or a production control abnormal signal through analysis, and send the production control qualified signal or the production control abnormal signal to the background management end. When the background management end receives the production control abnormal signal, it issues a corresponding early warning to remind the background management personnel to timely adjust the production control scheme of the field effect transistor, strengthen the subsequent production supervision, ensure the stability and quality of subsequent production, and have high intelligent level. The specific analysis process of the transistor production strategy analysis module is as follows: The number of field effect transistors corresponding to the structural non-reliable signal produced in the detection period and the number of field effect transistors not evaluated as qualified products are obtained, and the sum of the two is calculated to obtain a transistor production value. The transistor production value is compared with the total number of field effect transistors produced in the detection period to obtain a transistor occupation value. If the transistor occupation value exceeds the preset transistor occupation threshold value, it indicates that the production quality in the detection period is poor, and the production control of the field effect transistor is poor. Then, a production control abnormal signal is generated; If the transistor occupation value exceeds the preset transistor occupation threshold value, all faults occurring in the production process of the field effect transistor in the detection period are obtained. The solution time of the corresponding fault is compared with the corresponding preset solution time threshold value. If the solution time exceeds the corresponding preset solution time threshold value, the non-timely symbol XW-1 is assigned to the corresponding fault; The total number of faults occurring in the production process of the field effect transistor in the detection period is obtained and marked as a fault frequency value. The number of non-timely symbols XW-1 generated in the detection period is marked as a delay value. The solution time is compared with the corresponding preset solution time threshold value to obtain a recovery time value. The average of all recovery time values in the detection period is calculated to obtain a recovery condition value; The fault frequency value, the delay value and the recovery condition value are weighted and summed to obtain a production strategy influence value. That is, the fault frequency value, the delay value and the recovery condition value are respectively assigned a corresponding preset weight coefficient, and the fault frequency value, the delay value and the recovery condition value are respectively multiplied by the corresponding preset weight coefficient. The sum of the three product results is marked as the production strategy influence value. It should be noted that the larger the value of the production strategy influence value, the worse the comprehensive performance of the production control of the field effect transistor in the detection period; The production strategy influence value is compared with a preset production strategy influence threshold value, if the production strategy influence value exceeds the preset production strategy influence threshold value, it indicates that the production control performance of the field effect transistor in the detection period is poor in general, and a production control abnormal signal is generated, if the production strategy influence value does not exceed the preset production strategy influence threshold value, it indicates that the production control performance of the field effect transistor in the detection period is good in general, and a production control qualified signal is generated.

[0023] The working principle of the present application is as follows: in use, the transistor scanning module is used to scan the appearance of the field effect transistor, the structure reliability analysis module is used to analyze the transistor image to evaluate the structure reliability of the field effect transistor, the detection personnel is reminded not to perform subsequent quality detection operation of the field effect transistor when the structure unreliable signal is generated, so as to avoid wasting unnecessary manpower, material resources and financial resources, and the signal excitation generation module is used to generate a plurality of excitation signals suitable for field effect transistor detection when the structure reliable signal is generated, the intelligent feature analysis module is used to collect a plurality of electrical parameters and non-electrical parameters of the field effect transistor under signal excitation and perform deep analysis, extract the key performance characteristics of the field effect transistor, the transistor quality evaluation decision module is used to comprehensively and objectively evaluate the quality of the field effect transistor according to the analysis report provided by the intelligent feature analysis module and combined with the preset quality standard and evaluation model, so as to facilitate to provide targeted improvement means for quality control in the production process, help to improve the overall quality and market competitiveness of the product, realize comprehensive, efficient and accurate detection of the field effect transistor, and help to improve the quality detection level and production efficiency.

[0024] The threshold value or the preset value, the preset range and the like in the technical scheme of the present application are set for result comparison and analysis, so as to determine whether it is good or bad, and the size of the value is set by combining large model analysis of sample data and artificial experience for storage, and can be appropriately adjusted through seasonal or rational influence conditions; and the preset weight coefficient and the influence factor are set according to the influence size of each parameter on the result, to allocate specific numerical values to finally reflect the influence condition on the result, and are also set by combining large model analysis of sample data and artificial experience for storage, and can be appropriately adjusted through seasonal or rational influence conditions.

[0025] The preferred embodiments of the present application disclosed above are only used to help explain the present application, and the preferred embodiments do not describe all the details and limit the present application to the specific embodiments. Obviously, many modifications and changes can be made according to the content of the present application. The embodiments are selected and described in detail in the present application, in order to better explain the principles and practical applications of the present application, so that the persons skilled in the art can well understand and utilize the present application. The present application is limited by the claims and the whole scope and equivalents thereof.

Claims

1. A field effect transistor quality detection system, characterized by, The field effect transistor quality detection device comprises a transistor scanning module, a structure reliability analysis module, a signal excitation generation module, an intelligent feature analysis module, a transistor quality evaluation decision module and an interactive alarm terminal. When the structure reliable signal is generated, the signal excitation generation module generates a plurality of excitation signals suitable for field effect transistor detection, and the intelligent feature analysis module collects a plurality of electrical parameters and non-electrical parameters of the field effect transistor under signal excitation, deeply analyzes the collected data, and extracts key performance characteristics of the field effect transistor. The transistor quality evaluation decision module comprehensively evaluates the quality of the field effect transistor according to the analysis report provided by the intelligent feature analysis module, combines the preset quality standard and evaluation model, and sends the transistor quality detection report to the interactive alarm terminal.

2. A field effect transistor quality detection system according to claim 1, wherein The signal excitation generation module determines the required excitation signal type according to the type and detection requirement of the field effect transistor, controls the signal parameters through the internal signal generation circuit and combined with the digital signal processing technology; the generated excitation signal is amplified and buffered, and then output to the intelligent feature analysis module.

3. The field effect transistor quality detection system of claim 1, wherein, The intelligent feature analysis module is used for receiving the excitation signal output by the signal excitation generation module, and applying it to the field effect transistor to be detected, and using high-precision sensors and acquisition circuits to collect various parameters of the field effect transistor in real time, and performing analog-to-digital conversion on the collected multi-parameter data.

4. A field effect transistor quality detection system according to claim 3, wherein The intelligent feature analysis module is also used for data preprocessing of the collected multi-parameter data, and uses signal processing algorithm and machine learning technology to extract features from the processed data. After feature extraction and analysis, an analysis report containing key performance characteristics is generated and transmitted to the transistor quality evaluation decision module.

5. The field effect transistor quality detection system of claim 1, wherein, The specific operation process of the transistor quality evaluation decision module is as follows: Receive the analysis report generated by the intelligent feature analysis module, compare it with the preset quality standard stored in the internal storage, establish a multi-parameter comprehensive evaluation model, and calculate the comprehensive quality score by weighting the performance characteristics of the field effect transistor. According to the comprehensive quality score, the field effect transistor is divided into different quality grades, including qualified products, substandard products and waste products, and a detailed detection report is generated according to the evaluation result, including quality grade, evaluation situation of each performance index and existing problems and suggestions.

6. The field effect transistor quality detection system of claim 1, wherein, The specific analysis process of the structure reliability analysis module includes: Obtain the transistor image and compare it with the corresponding standard image for contour coincidence, thereby collecting the contour coincidence degree of the field effect transistor, if the contour coincidence degree does not exceed the preset contour coincidence degree threshold, the structure non-reliable signal of the corresponding field effect transistor is generated; if the contour coincidence degree exceeds the preset contour coincidence degree threshold, defect recognition decision analysis is performed.

7. A field effect transistor quality detection system according to claim 6, wherein The specific analysis process of the defect recognition decision analysis is as follows: Based on the defects existing in the surface of the transistor image capture field effect transistor, if there is a fatal defect on the field effect transistor, a structure unreliable signal of the corresponding field effect transistor is generated; if there is no fatal defect on the field effect transistor, the surface risk detection value is compared with a preset surface risk detection threshold value, if the surface risk detection value exceeds the preset surface risk detection threshold value, a structure unreliable signal of the corresponding field effect transistor is generated; If the surface risk detection value does not exceed the preset surface risk detection threshold value, a structure reliable influence value is calculated by weighted summation of the surface risk detection value, the accumulated hidden danger value and the surface risk amplitude value, if the structure reliable influence value exceeds a preset structure reliable influence threshold value, a structure unreliable signal of the corresponding field effect transistor is generated; otherwise, a structure reliable signal of the corresponding field effect transistor is generated.

8. The field effect transistor quality detection system of claim 1, wherein, The structure reliability analysis module and the transistor quality evaluation decision module are both communicatively connected to the transistor production strategy analysis module, which is configured to analyze the production status of the field effect transistor in the detection period and send a production control qualified signal or a production control abnormal signal to the background management end.

9. A field effect transistor quality detection system according to claim 8, wherein, The specific analysis process of the transistor production strategy analysis module is as follows: If the transistor inferior occupation value exceeds a preset transistor inferior occupation threshold value, a production control abnormal signal is generated; if the transistor inferior occupation value exceeds the preset transistor inferior occupation threshold value, a production strategy influence value is calculated by weighted summation of the fault frequency value, the reconnection delay value and the reconnection surface condition value, if the production strategy influence value exceeds a preset production strategy influence threshold value, a production control abnormal signal is generated; otherwise, a production control qualified signal is generated.

10. A field effect transistor quality detection apparatus, characterized by, The detection device adopts the field effect transistor quality detection system according to any one of claims 1-9.

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