Hybrid load and short circuit endurance capability test platform and method

Abstract

The invention relates to a hybrid load and short circuit tolerance testing platform and method. The platform comprises a controller module, a gate driving module and a load switch stress short circuit tolerance testing module. Wherein the gate driving module comprises an IGBT gate driving module and a DUT gate driving module; the controller module is respectively connected with the IGBT gate driving module and the DUT gate driving module and is used for providing pulse signals for the gate driving modules; the IGBT gate driving module and the DUT gate driving module are respectively connected with the load switch stress short circuit tolerance test module and are used for providing pulse signals for the load switch stress short circuit tolerance test module. According to the pulse signal with adjustable platform short-circuit time, adjustable switch number, adjustable switch frequency and adjustable duty ratio, the stability of the voltage can be maintained during high-frequency and high-intensity testing. According to the method, the short circuit response under the high-frequency switching condition can be monitored and recorded in real time, the potential short circuit problem can be found in time, and the test period is shortened.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronics, in particular to a hybrid load and short-circuit resistance test platform and method. BACKGROUND

[0002] With the continuous improvement of performance requirements of electronic devices, the design and testing of short-circuit circuits and switching circuits are facing increasingly severe challenges, especially in high-frequency and high-speed applications. The switching characteristics and short-circuit characteristics of the circuit are crucial to the stability and reliability of the overall system. The traditional switching test and subsequent short-circuit test method often exposes problems such as switching test overshoot, short-circuit test start-up and shutdown delay under high-frequency switching operation, which directly affects the optimization of the overall system circuit design and performance evaluation. In high-frequency applications, the switching frequency of the switching circuit and the switching frequency of the short-circuit circuit have an important influence on their working performance. The short-circuit behavior of the circuit under high-frequency conditions often exhibits significantly different characteristics from low-frequency, which is particularly critical for evaluating the stability and reliability of the circuit. However, existing short-circuit test methods often cannot accurately simulate the circuit response under high-frequency conditions, limiting the reliability of the test results. Traditional test methods often use different circuits to implement switching circuits and short-circuit tests, which cannot comprehensively evaluate the transient damage of short-circuit during high-speed switching of devices. Especially in high-frequency application scenarios, it is difficult to capture the small changes and transient responses during the short-circuit process. SUMMARY

[0003] Therefore, it is necessary to provide a hybrid load and short-circuit resistance test platform and method that can provide adjustable gate voltage, adjustable number of switching cycles, adjustable duty cycle and cycle size, and adjustable short-circuit time, and can meet the short-circuit resistance test conditions of various switching stress life cycles of power devices, in order to solve the technical problems of switching test overshoot, short-circuit test start-up and shutdown delay, the inability of traditional test methods to comprehensively evaluate the transient damage of short-circuit during high-speed switching of devices, and the inability to capture small changes and transient responses during the short-circuit process in high-frequency application scenarios.

[0004] To solve the above technical problems, the technical solutions of the present application are as follows: In a first aspect, a hybrid load and short-circuit resistance test platform includes: a controller module, a gate drive module, and a load switching stress short-circuit resistance test module; wherein the gate drive module includes an IGBT gate drive module and a DUT gate drive module; The controller module is connected to the IGBT gate drive module and the DUT gate drive module, respectively, for providing pulse signals to the gate drive module; The IGBT gate drive module and the DUT gate drive module are connected with the load switch stress short circuit resistance test module, and are used for providing pulse signals for the load switch stress short circuit resistance test module.

[0005] In a second aspect, a hybrid load and short circuit resistance capability test method is applied to the hybrid load and short circuit resistance capability test platform, and includes the following steps: S1: adjusting the voltage value of the IGBT gate drive module and inputting the voltage value to the IGBT gate drive module through the controller module; S2: adjusting the voltage value of the DUT gate drive module and inputting the voltage value to the DUT gate drive module through the controller module; S3: adjusting the resistance value of the turn-on resistance and the turn-off resistance of the DUT gate drive module and inputting the resistance value to the DUT gate drive module; S4: the controller module sends a pulse signal to the gate drive module, and outputs a pulse signal with a set amplitude; S5: when the IGBT gate voltage of the load switch stress short circuit resistance test module is low, the IGBT is turned off, the gate voltage of the DUT is a rectangular wave pulse, the current of the gate drive of the DUT flows into the turn-on resistance and flows out of the turn-off resistance, the current flows through the resistance or inductance connected in parallel with the IGBT, and the DUT continuously switches; the IGBT is turned on, the current flows through the IGBT, and the current of the gate drive of the DUT flows into the turn-on resistance and flows out of the turn-off resistance, and at this time, the DUT opening will cause a type of short circuit.

[0006] Compared with the prior art, the technical scheme of the present application has the following beneficial effects: The controller module, the IGBT gate drive module, the DUT gate drive module and the load switch stress short circuit resistance test module are used to rapidly enter a short circuit state under high-frequency non-overshoot switching conditions and perform a high-frequency short circuit behavior aging experiment. The circuit design enables the circuit to immediately enter a short circuit state after each switching, thereby achieving comprehensive evaluation of the short circuit characteristics of the circuit under frequent switching. Through this high-frequency switching and short circuit test method, a large number of high-frequency switching operations can be simulated in a short time, and real short circuit behavior data can be obtained. Compared with traditional short circuit test methods, the present application provides a more efficient test means, greatly improves test accuracy and speed, and can monitor and record short circuit responses under high-frequency switching conditions in real time, timely discover potential short circuit problems, shorten test cycles, and reduce operation complexity. This method not only optimizes the short circuit test process, but also accurately evaluates the stability and reliability of the circuit in high-frequency applications. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 A schematic diagram of a whole structure of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application; Figure 2 A schematic diagram of a controller module structure of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application; Figure 3 A schematic diagram of an IGBT gate drive module structure of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application; Figure 4 A schematic diagram of a DUT gate drive module structure of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application; Figure 5 A schematic diagram of a load switch stress short-circuit tolerance test module structure of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application; Figure 6 A schematic diagram of a working pulse signal waveform of a controller module of a hybrid load and short-circuit tolerance test platform in some embodiments of the present application. DETAILED DESCRIPTION

[0008] The terms "first", "second", "third", etc., in the specification and claims of the present application and in the above-described drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the terms thus used can be interchanged, as appropriate, and are merely used to distinguish the objects of the same attribute in the description of the embodiments of the present application. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus including a series of units does not have to be limited to those units, but can include other units not clearly listed or inherent to the process, method, product, or apparatus. The term "determine" broadly covers various actions, which can include obtaining, calculating, computing, processing, deriving, investigating, looking up (for example, looking up in a table, a database, or another data structure), ascertaining, and the like, and can also include receiving (for example, receiving information), accessing (for example, accessing data in a memory), and the like, and can also include generating, creating, establishing, and the like, and resolving, selecting, choosing, and the like, and the like. Related definitions of other terms will be given in the following description.

[0009] It should be noted that when an element is considered to be "connected" to another element, it can be directly connected to the other element, or connected to the other element through a central element. In addition, "connected" in the following embodiments should be understood as "electrically connected", "communicatively connected", and the like, if there is a transmission of electrical signals or data between the connected objects.

[0010] It should be emphasized that the acquisition, transmission, storage, use, processing, etc. of data in the technical solutions of the embodiments of the present application comply with the relevant provisions of national laws and regulations.

[0011] In the embodiments of the present application, some existing industry solutions may be mentioned, such as certain software, components, models, etc. They should be considered as exemplary, and their purpose is only to illustrate the feasibility of the implementation of the technical solutions of the present application, but it does not mean that the applicant has or will necessarily use the solution.

[0012] The accompanying drawings are only used for illustrative purposes and should not be construed as limiting the patent; In order to better illustrate the embodiments, some components in the drawings may be omitted, enlarged or reduced, and do not represent the actual size of the product; For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0013] The technical solutions of the present application will be further described below in conjunction with the drawings and embodiments.

[0014] Embodiment 1 The present embodiment provides a hybrid load and short circuit resistance test platform, referring to Figure 1 , comprising: a controller module, a gate drive module and a load switch stress short circuit resistance test module; wherein the gate drive module comprises: an IGBT gate drive module and a DUT gate drive module; Referring to Figure 2 , the controller module is connected with the IGBT gate drive module and the DUT gate drive module respectively, for providing pulse signals for the gate drive module; Referring to Figures 3-5 , the IGBT gate drive module and the DUT gate drive module are connected with the load switch stress short circuit resistance test module respectively, for providing pulse signals for the load switch stress short circuit resistance test module.

[0015] In some preferred embodiments, the load switch stress short circuit resistance test module can be an inductive / resistive load switch stress short circuit resistance test module.

[0016] In the specific implementation process, the platform can realize high-frequency opening and closing operations, and quickly enters a short-circuit state after each switch, thereby effectively simulating and testing the high-frequency switch transient short-circuit characteristics of the circuit. By integrating the high-frequency switch module and the short-circuit test unit, the circuit can support high-frequency switch operations, ensure the rapid switching and accurate testing of the short-circuit state after each switch. This design effectively improves the frequency response and accuracy of the test, meeting the strict test requirements of high-frequency applications on short-circuit circuits. At the same time, this test method can help engineers better understand the behavior of the circuit under high-frequency short-circuit conditions, providing an important basis for the optimization and reliability evaluation of circuit design.

[0017] Embodiment 2 This embodiment further provides a hybrid load and short-circuit tolerance testing platform based on Embodiment 1, which is described in detail in Figures 1-5 , and includes: a controller module, a gate drive module, and a load switch stress short-circuit tolerance test module; wherein the gate drive module includes an IGBT gate drive module and a DUT gate drive module; The controller module is connected with the IGBT gate drive module and the DUT gate drive module respectively, for providing pulse signals for the gate drive module; the working pulse signal waveform diagram of the controller module is shown in Figure 6 .

[0018] The IGBT gate drive module and the DUT gate drive module are connected with the load switch stress short-circuit tolerance test module respectively, for providing pulse signals for the load switch stress short-circuit tolerance test module.

[0019] In some preferred embodiments, the IGBT gate drive module, as shown in Figure 3 , includes: a first power supply Power1, a second power supply Power2, a third power supply Power3, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a drive chip; The first power supply Power1 is connected with one end of the first capacitor C1, one end of the first resistor R1, and the second port of the drive chip respectively; the other end of the first capacitor C1 is connected with the first ground terminal; the other end of the first resistor R1 is connected with one end of the second capacitor C2 and the fourth port of the drive chip respectively, and the other end of the second capacitor C2 and the third port of the drive chip are connected with the first ground terminal respectively; The first input signal end Signal1 is connected with one end of the second resistor R2, and the other end of the second resistor R2 is connected with the first port of the drive chip; The second power supply Power2 is connected with the fifth port of the driving chip and one end of the third capacitor C3 respectively, and the other end of the third capacitor C3 is connected with the second ground terminal; One end of the third resistor R3 is connected with the sixth port of the driving chip, and the other end is connected with the first output signal terminal IGBT_Driver; One end of the fourth resistor R4 is connected with the sixth port of the driving chip, and the other end is connected with the first output signal terminal IGBT_Driver; The third power supply Power3 is connected with the eighth port of the driving chip and one end of the fourth capacitor C4 respectively, the other end of the fourth capacitor C4 is connected with one end of the fifth resistor R5 and the second ground terminal respectively, and the other end of the fifth resistor R5 is connected with the first output signal terminal IGBT_Driver.

[0020] In some preferred embodiments, the IGBT gate drive module adopts optical isolation technology to realize the isolation of the low-voltage pulse signal from the controller module and the output high-voltage pulse.

[0021] In some preferred embodiments, the first power supply Power1, the second power supply Power2, the third power supply Power3, the fourth power supply Power4 and the fifth power supply Power5 provide stable and adjustable direct current voltage for the pulse signal.

[0022] In some preferred embodiments, the DUT gate drive module, referring to Figure 4 , comprises: The fourth power supply Power4, the fifth power supply Power5, the first amplification module, the second amplification module, the first MOS tube Q1, the second MOS tube Q2, the third MOS tube Q3, the fourth MOS tube Q4, the sixth resistor R6, the seventh resistor R7, the eighth resistor R8 and the ninth resistor R9; The first amplification module is connected with the second input signal terminal Signal2, the third input signal terminal Signal3, the gate of the first MOS tube Q1 and the gate of the second MOS tube Q2 respectively; The second amplification module is connected with the fourth input signal terminal Signal4, the fifth input signal terminal Signal5, the gate of the third MOS tube Q3 and the gate of the fourth MOS tube Q4 respectively; The fourth power supply Power4 is connected with the drain of the first MOS tube Q1 and the drain of the second MOS tube Q2 respectively; The fifth power supply Power5 is connected with the source of the third MOS tube Q3 and the source of the fourth MOS tube Q4 respectively; One end of the sixth resistor R6 is connected with the source of the first MOS Q1, and the other end is connected with the second output signal end DUT_Driver; One end of the seventh resistor R7 is connected with the source of the second MOS Q2, and the other end is connected with the second output signal end DUT_Driver; One end of the eighth resistor R8 is connected with the drain of the third MOS Q3, and the other end is connected with the second output signal end DUT_Driver; One end of the ninth resistor R9 is connected with the source of the fourth MOS Q4, and the other end is connected with the second output signal end DUT_Driver.

[0023] In some preferred embodiments, the voltage of the fourth power supply Power4 and the fifth power supply Power5 is adjustable, and the high and low voltage values of the second output signal end of the DUT gate drive module are the voltage of the fourth power supply Power4 and the fifth power supply Power5 respectively; the sixth resistor R6 and the seventh resistor R7 are used to control the charging time of the DUT gate drive module; the eighth resistor R8 and the ninth resistor R9 are used to control the discharging time of the DUT gate drive module.

[0024] In some preferred embodiments, the controller module outputs high and low voltage to the second input signal end Signal2 and the third input signal end Signal3 respectively to control the opening and closing of the first MOS Q1 and the second MOS Q2 respectively; the controller module outputs low and high voltage to the fourth input signal end Signal4 and the fifth input signal end Signal5 respectively to control the opening and closing of the third MOS Q3 and the fourth MOS Q4 respectively.

[0025] In some preferred embodiments, the load switch stress short circuit resistance test module, refer to Figure 5 , comprising: DC power supply, fifth capacitor C5, first switch S1, second switch S2, tenth resistor R10, first inductor L1, IGBT, DUT and coaxial resistor Shunt; The one end of the direct current power supply DC is connected with the one end of the fifth capacitor C5, the collector of the IGBT, the one end of the first switch S1 and the one end of the second switch S2 respectively, and the other end is connected with the third ground end; the other end of the fifth capacitor C5 is connected with the third ground end; the other end of the first switch S1 is connected with the one end of the first inductor, and the other end of the first inductor is connected with the drain of the DUT; the other end of the second switch S2 is connected with the tenth resistor R10, and the other end of the tenth resistor R10 is connected with the emitter of the IGBT and the drain of the DUT respectively; the source of the DUT is connected with the one end of the coaxial resistor Shunt, and the other end of the coaxial resistor Shunt is connected with the third ground end.

[0026] The above load switch stress short circuit resistance test module changes the current size of the switching process by changing the size of the tenth resistor R10.

[0027] In some preferred embodiments, the gate drive module provides switching pulses for the IGBT and the DUT, and realizes two circuit state modes by controlling the high and low levels of the gates of the IGBT and the DUT of the load switch stress short circuit resistance test module.

[0028] In some preferred embodiments, the fifth capacitor C5 maintains the stability of the voltage in the short circuit process as a support capacitor, and provides energy for the short circuit of the DUT; and the IGBT is used as a solid-state circuit breaker to limit short circuit energy and protect the circuit.

[0029] In the specific implementation process, the IGBT gate drive module: high and low voltage pulse signal input gate drive chip, chip enable, through optical isolation technology, separate input and output, as shown in Figure 1 The comparator outputs a set high level or low level, when the pulse input is high, the output is high, and when the pulse output is low, the output is low. The influence of the gate drive on-resistance and off-resistance on the charging and discharging of the device gate is calculated.

[0030] The switching process (charging) is as follows, When the drive output is high Vgg+, C g (charging) is charged through Rg:

[0031] Where, V gs (t) rises exponentially from 0V to V gg+ .

[0032] Time constant:

[0033]

[0034] where t on defined as V gs from 10% to 90% V gg+ of time.

[0035] The turn-off process (discharge) is as follows, When the drive output is low Vgg-, Cg discharges through Rg:

[0036]

[0037]

[0038] where t off defined as V gs from 90% to 10% V gg+ of time.

[0039] It can be seen that by adjusting the gate resistance Rg, the charging and discharging rate can be controlled, thereby affecting the switching frequency and efficiency of the device.

[0040] The DUT gate drive module: when doing switching stress, the second input signal end Signal2 inputs high level to drive the first MOS tube Q1 to open through the amplification circuit, and the DUT is turned on through the sixth resistance charging; the fourth input signal end Signal4 inputs low level to drive the third MOS tube Q3 to open through the amplification circuit, and the DUT is turned off through the eighth resistance discharging; when doing short circuit stress, the third input signal end Signal3 inputs high level to drive the second MOS tube Q2 to open through the amplification circuit, and the DUT is turned on through the seventh resistance charging; the fourth input signal end Signal4 inputs low level to drive the fourth MOS tube Q4 to open through the amplification circuit, and the DUT is turned off through the ninth resistance discharging. The influence of the third resistance and the fourth resistance on the charging and discharging of the device gate is calculated.

[0041] The load switch stress short circuit resistance test module: the gate drive module provides the switching voltage pulse of IGBT and DUT for the load switch stress short circuit resistance test module; when the load switch stress short circuit resistance test module is in the switching state, the gate voltage of IGBT is low, IGBT is turned off, the gate voltage of DUT is a rectangular wave pulse, and the current passes through the resistance or inductance connected in parallel with IGBT, and DUT is constantly switched on and off; when the load switch stress short circuit resistance test module is in the short circuit state, IGBT is turned on, and the current flows from IGBT, at this time, if DUT is turned on, the first type of short circuit will occur.

[0042] The fifth capacitor C5 of the gate drive module provides energy and voltage stabilization for the short circuit process, and the theoretical size requirement of the fifth capacitor C5 is:

[0043] U is the bus voltage, I is the highest short circuit current, and t is the short circuit time, is the short circuit drain-source oscillation amplitude.

[0044] It can be understood that the options in Embodiment 1 described above are also applicable to this embodiment, and therefore will not be repeated here.

[0045] Embodiment 3 This embodiment further provides a hybrid load and short circuit resistance test method based on Embodiment 2, which is applied to the hybrid load and short circuit resistance test platform described in Embodiment 2, and includes: S1: Adjusting the voltage value of the IGBT gate drive module and inputting it to the IGBT gate drive module through the controller module; S2: Adjusting the voltage value of the DUT gate drive module and inputting it to the DUT gate drive module through the controller module; S3: Adjusting the resistance value of the turn-on resistance and turn-off resistance of the DUT gate drive module and inputting it to the DUT gate drive module; S4: The controller module sends a pulse signal to the gate drive module, and the output amplitude is a set pulse signal; S5: When the IGBT gate voltage of the load switch stress short circuit resistance test module is low, the IGBT is turned off, the gate voltage of the DUT is a rectangular pulse, the current of the DUT gate drive flows from the turn-on resistance and flows out from the turn-off resistance; The current flows through the resistance or inductance connected in parallel with the IGBT, and the DUT continuously switches; The IGBT is turned on, the current flows through the IGBT, and the current of the DUT gate drive flows from the turn-on resistance and flows out from the turn-off resistance, at which time the DUT opening will occur a kind of short circuit.

[0046] In the specific implementation process, the above step S1: Adjusting the voltage value of the second power supply Power2 and the third power supply Power3 of the IGBT gate drive module and inputting it to the IGBT gate drive module through the controller module; The above step S2: Adjusting the voltage value of the fourth power supply Power4 and the fifth power supply Power5 of the DUT gate drive module and inputting it to the DUT gate drive module through the controller module; The above step S3: The turn-on resistance of the DUT gate drive module includes a sixth resistance R6 and a seventh resistance R7, and the turn-off resistance includes an eighth resistance R8 and a ninth resistance R9, and the resistance values are input to the DUT gate drive module. The above step S4: The controller module sends a pulse signal to the gate drive module, and the output amplitude of the pulse signal is set; The above step S5: When the IGBT gate voltage of the load switch stress short-circuit resistance test module is low, the IGBT is turned off, the gate voltage of the DUT is a rectangular pulse, the current of the gate drive of the DUT flows from the sixth resistance R6 and flows out from the eighth resistance R8. The current flows through the resistance or inductance connected in parallel with the IGBT, and the DUT continuously switches; the IGBT is turned on, the current flows through the IGBT, and the current of the gate drive of the DUT flows from the seventh resistance R7 and flows out from the ninth resistance R9, at this time, if the DUT is turned on, the first type of short circuit will occur.

[0047] Compared with the traditional short-circuit test method, the application provides a more efficient test means, which greatly improves the test accuracy and speed. It can monitor and record the short-circuit response under high-frequency switching conditions in real time, timely discover potential short-circuit problems, shorten the test period, and reduce the operation complexity. This method not only optimizes the short-circuit test process, but also can accurately evaluate the stability and reliability of the circuit in high-frequency applications. This application has important significance for circuit design, performance evaluation and optimization, and can meet the needs of modern electronic equipment for high-frequency short-circuit test, and provides an effective tool for the research and development and quality control of electronic products. It has a wide application prospect in electronic product research and development units, test laboratories and quality inspection institutions, and has significant economic benefits and technical value.

[0048] It can be understood that the options in Embodiment 2 described above are also applicable to the present embodiment, and therefore will not be described again.

[0049] The same or similar reference signs correspond to the same or similar components; The terms used to describe the positional relationship in the drawings are only used for exemplary illustration, and cannot be understood as a limitation on the present application; It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0050] In different specific implementations, the methods or systems described in the present application can be implemented in software, hardware or their combination. In addition, the order of the steps of the method can be changed, and various elements can be added, reordered, combined, omitted, modified, etc.

[0051] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation of the present application, and are not used to limit the present application. Based on the above description, other different forms of changes or variations can be made by those skilled in the art, and each separate structure / function module or unit can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part, and the structure and function of the separate components can be realized as a combined structure or component. Here, all the implementations are not required or possible to be exhausted. Any modification, equivalent replacement and improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. A hybrid load and short circuit tolerance test platform, characterized in that, The utility model relates to a kind of IGBT gate drive module and DUT gate drive module, including: Controller module, gate drive module and load switch stress short circuit resistance test module;Wherein, the gate drive module includes: IGBT gate drive module and DUT gate drive module; The controller module is connected with the IGBT gate drive module and the DUT gate drive module respectively, for providing pulse signal for the gate drive module; The IGBT gate drive module and the DUT gate drive module are connected with the load switch stress short circuit resistance test module respectively, for providing pulse signal for the load switch stress short circuit resistance test module.

2. The hybrid load and short-circuit tolerance test platform of claim 1, wherein, The IGBT gate drive module includes: First power supply Power1, second power supply Power2, third power supply Power3, first capacitor C1, second capacitor C2, third capacitor C3, fourth capacitor C4, first resistance R1, second resistance R2, third resistance R3, fourth resistance R4, fifth resistance R5 and drive chip; The first power supply Power1 is connected with the first capacitor C1 one end, the first resistance R1 one end and the drive chip second port respectively;The first capacitor C1 other end is connected with first ground terminal;The first resistance R1 other end is connected with the second capacitor C2 one end and the drive chip fourth port respectively, and the second capacitor C2 other end and the drive chip third port are connected with the first ground terminal respectively; The second resistance R2 one end is connected with first input signal end Signal1, and other end is connected with the drive chip first port; The second power supply Power2 is connected with the drive chip fifth port and the third capacitor C3 one end respectively, and the third capacitor C3 other end is connected with second ground terminal; The third resistance R3 one end is connected with the drive chip sixth port, and other end is connected with first output signal end IGBT_Driver; The fourth resistance R4 one end is connected with the drive chip sixth port, and other end is connected with the first output signal end IGBT_Driver; The third power supply Power3 is connected with the drive chip eighth port and the fourth capacitor C4 one end respectively, and the fourth capacitor C4 other end is connected with the fifth resistance R5 one end and the second ground terminal respectively, and the fifth resistance R5 other end is connected with the first output signal end IGBT_Driver.

3. The hybrid load and short-circuit tolerance test platform of claim 1, wherein, The DUT gate drive module includes: Fourth power supply Power4, fifth power supply Power5, first amplification module, second amplification module, first MOS tube Q1, second MOS tube Q2, third MOS tube Q3, fourth MOS tube Q4, sixth resistance R6, seventh resistance R7, eighth resistance R8 and ninth resistance R9; The first amplification module is connected with second input signal end Signal2, third input signal end Signal3, the gate of the first MOS tube Q1 and the second MOS tube Q2 respectively; The second amplification module is connected with the gate of the third MOS tube Q3 and the fourth MOS tube Q4 respectively; The first MOS tube Q1 is connected with the drain of the third MOS tube Q3 and the fourth MOS tube Q4 respectively; The second MOS tube Q2 is connected with the drain of the first MOS tube Q1 and the fourth MOS tube Q4 respectively; The third MOS tube Q3 is connected with the drain of the first MOS tube Q1 and the second MOS tube Q2 respectively; The fourth MOS tube Q4 is connected with the drain of the first MOS tube Q1 and the second MOS tube Q2 respectively; The sixth resistance R6 one end is connected with the gate of the third MOS tube Q3, and other end is connected with the gate of the fourth MOS tube Q4; The seventh resistance R7 one end is connected with the gate of the first MOS tube Q1, and other end is connected with the gate of the second MOS tube Q2; The eighth resistance R8 one end is connected with the gate of the third MOS tube Q3, and other end is connected with the gate of the fourth MOS tube Q4; The ninth resistance R9 one end is connected with the gate of the first MOS tube Q1, and other end is connected with the gate of the second MOS tube Q2. The second amplification module is connected with the fourth input signal terminal Signal4, the fifth input signal terminal Signal5, the gate of the third MOS tube Q3 and the gate of the fourth MOS tube Q4 respectively; The fourth power supply Power4 is connected with the drain of the first MOS tube Q1 and the drain of the second MOS tube Q2 respectively; The fifth power supply Power5 is connected with the source of the third MOS tube Q3 and the source of the fourth MOS tube Q4 respectively; One end of the sixth resistor R6 is connected with the source of the first MOS tube Q1, and the other end is connected with the second output signal terminal DUT_Driver; One end of the seventh resistor R7 is connected with the source of the second MOS tube Q2, and the other end is connected with the second output signal terminal DUT_Driver; One end of the eighth resistor R8 is connected with the drain of the third MOS tube Q3, and the other end is connected with the second output signal terminal DUT_Driver; One end of the ninth resistor R9 is connected with the source of the fourth MOS tube Q4, and the other end is connected with the second output signal terminal DUT_Driver.

4. The hybrid load and short circuit withstand capability test platform according to any one of claims 1-3, characterized in that, The load switch stress short circuit resistance test module comprises: A direct current power supply DC, a fifth capacitor C5, a first switch S1, a second switch S2, a tenth resistor R10, a first inductor L1, an IGBT, a DUT and a coaxial resistor Shunt; One end of the direct current power supply DC is connected with one end of the fifth capacitor C5, the collector of the IGBT, one end of the first switch S1 and one end of the second switch S2 respectively, and the other end is connected with a third ground terminal; the other end of the fifth capacitor C5 is connected with the third ground terminal; the other end of the first switch S1 is connected with one end of the first inductor, and the other end of the first inductor is connected with the drain of the DUT; the other end of the second switch S2 is connected with the tenth resistor R10, and the other end of the tenth resistor R10 is connected with the emitter of the IGBT and the drain of the DUT respectively; the source of the DUT is connected with one end of the coaxial resistor Shunt, and the other end of the coaxial resistor Shunt is connected with the third ground terminal.

5. The hybrid load and short-circuit tolerance test platform of claim 2, wherein, The IGBT gate drive module adopts optical isolation technology to realize the isolation of the low-voltage pulse signal from the controller module and the output high-voltage pulse.

6. The hybrid load and short-circuit tolerance test platform of claim 3, wherein, The voltages of the fourth power supply Power4 and the fifth power supply Power5 are adjustable, the high and low voltage values of the second output signal terminal of the DUT gate drive module are the voltages of the fourth power supply Power4 and the fifth power supply Power5 respectively; the sixth resistor R6 and the seventh resistor R7 are used to control the charging time of the DUT gate drive module; the eighth resistor R8 and the ninth resistor R9 are used to control the discharging time of the DUT gate drive module.

7. The hybrid load and short-circuit tolerance test platform of claim 6, wherein, The controller module outputs high and low voltages to the second input signal terminal Signal2 and the third input signal terminal Signal3 respectively to control the opening and closing of the first MOS tube Q1 and the second MOS tube Q2 respectively. The controller module outputs low and high voltage to the fourth input signal terminal Signal4 and the fifth input signal terminal Signal5 respectively to control the opening and closing of the third MOS tube Q3 and the fourth MOS tube Q4 respectively.

8. The hybrid load and short-circuit tolerance test platform of claim 4, wherein, The gate drive module provides switching pulses for the IGBT and the DUT, and realizes two circuit state modes by controlling the high and low levels of the gates of the IGBT and the DUT of the load switch stress short circuit resistance test module.

9. The hybrid load and short-circuit tolerance test platform of claim 8, wherein, The fifth capacitor C5 maintains the stability of voltage during short circuit as a support capacitor, and provides energy for the short circuit of the DUT; the IGBT is used as a solid-state circuit breaker to limit short circuit energy and protect the circuit.

10. A hybrid load and short circuit resistance test method, applying a hybrid load and short circuit resistance test platform according to any one of claims 1-9, characterized in that, It comprises: S1: adjusting the voltage value of the IGBT gate drive module and inputting it to the IGBT gate drive module through the controller module; S2: adjusting the voltage value of the DUT gate drive module and inputting it to the DUT gate drive module through the controller module; S3: adjusting the resistance value of the turn-on resistance and the turn-off resistance of the DUT gate drive module and inputting it to the DUT gate drive module; S4: the controller module sends a pulse signal to the gate drive module, and outputs a pulse signal with a set amplitude; S5: when the gate voltage of the IGBT of the load switch stress short circuit resistance test module is low, the IGBT is turned off, the gate voltage of the DUT is a rectangular wave pulse, the current of the gate drive of the DUT flows from the turn-on resistance and flows out from the turn-off resistance; the current passes through the resistance or inductance connected in parallel with the IGBT, and the DUT continuously switches on and off; the IGBT is turned on, the current flows through the IGBT, and the current of the gate drive of the DUT flows from the turn-on resistance and flows out from the turn-off resistance, at this time the DUT is turned on and a type of short circuit occurs.

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