IGBT (Insulated Gate Bipolar Translator) device loss evaluation method and device, medium and electronic equipment

Abstract

The invention relates to the field of chips, and provides an IGBT device loss assessment method and device, a medium and electronic equipment, and the method comprises the steps: obtaining the conduction loss of an IGBT tube according to the average value of the conduction current of each conduction segment of the IGBT tube in a current period, obtaining the switching loss of the IGBT tube according to the switching current and stray inductance deviation value of each time of the IGBT tube in the current period, and carrying out the estimation of the loss of the IGBT tube. Obtaining the conduction loss of the fast recovery diode according to the conduction current average value of each conduction section of the fast recovery diode in the current period; according to the corresponding conduction current and stray inductance deviation value of the fast recovery diode before each turn-off in the current period, obtaining reverse recovery loss under the fast recovery diode; and determining the total loss of the IGBT device according to the obtained conduction loss, switching loss and reverse recovery loss. And accurate switching loss and reverse recovery loss are obtained by introducing a stray inductance deviation value, so that the accuracy of a total loss evaluation result is guaranteed.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of chips, in particular to an IGBT device loss evaluation method, device, medium and electronic equipment. BACKGROUND

[0002] IGBT devices are widely used in industrial power supplies, photovoltaic energy storage, new energy vehicles and other fields. The reliability of IGBT devices is closely coupled with their losses, and accurate loss calculation is a prerequisite for ensuring the long-term stable and reliable operation of IGBT devices. Balancing the calculation accuracy of losses and engineering efficiency and product cost is a difficult problem in designing power IGBT devices, especially accurate evaluation of IGBT device dynamic losses under various different working conditions is particularly important for the design of the device. SUMMARY

[0003] The purpose of the present application is to provide an IGBT device loss evaluation method, device, medium and electronic equipment to improve the above problems.

[0004] In order to achieve the above purpose, the technical scheme adopted by the embodiments of the present application is as follows: In a first aspect, the embodiments of the present application provide an IGBT device loss evaluation method, which comprises: According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, the conduction loss of the IGBT tube at the junction temperature is obtained, wherein the IGBT device comprises an IGBT tube and a fast recovery diode connected to the emitter and collector of the IGBT tube; According to the obtained conduction loss, switching loss and reverse recovery loss, the total loss of the IGBT device is determined.

[0005] In a second aspect, the embodiments of the present application provide an IGBT device loss evaluation device, which comprises: The first processing unit is used to obtain the junction temperature of the IGBT based on the average conduction current of the IGBT in each conduction segment during the current cycle. The conduction loss is as follows: The IGBT device includes an IGBT transistor and a fast recovery diode connected to the emitter and collector of the IGBT transistor. The first processing unit is further configured to obtain the junction temperature of the IGBT transistor based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle. The switching loss is calculated as follows: the switching current includes the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off; the stray inductance deviation value is the difference between the standard stray inductance of the test loss and the actual stray inductance of the test loss. The first processing unit is further configured to obtain the junction temperature of the fast recovery diode based on the average conduction current of the fast recovery diode in each conduction segment during the current cycle. The conduction loss is below; The first processing unit is further configured to obtain the fast recovery diode at the junction temperature based on the on-state current corresponding to each turn-off of the fast recovery diode within the current cycle and the stray inductance deviation value. The reverse recovery loss below; The second processing unit is used to determine the total loss of the IGBT device based on the obtained conduction loss, switching loss, and reverse recovery loss.

[0006] Thirdly, embodiments of the present invention provide a storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-described method.

[0007] Fourthly, embodiments of the present invention provide an electronic device, the electronic device comprising: a processor and a memory, the memory being used to store one or more programs; when the one or more programs are executed by the processor, the above-described method is implemented.

[0008] Compared to existing technologies, the present invention provides an IGBT device loss assessment method, apparatus, dielectric and electronic equipment that obtains the IGBT device's junction temperature based on the average conduction current of each conduction segment within the current cycle. The conduction loss at the junction temperature is obtained by considering the switching current and stray inductance deviation of the IGBT during each current cycle. To determine the switching losses, the average conduction current of the fast recovery diode during each conduction period is used to obtain the switching losses at the junction temperature. The conduction loss at the junction temperature is determined by the on-state current and stray inductance deviation of the fast recovery diode before each turn-off within the current cycle. The reverse recovery loss of the IGBT device is determined according to the obtained conduction loss, switching loss and reverse recovery loss, and the total loss of the IGBT device is determined.

[0009] In order to make the above objectives, characteristics and advantages of the present application more apparent, the following preferred embodiments are specifically described with reference to the attached drawings. BRIEF DESCRIPTION OF DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be considered as a limitation to the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0011] Figure 1 The structural schematic diagram of the electronic device provided by the embodiments of the present application.

[0012] Figure 2 The flowchart of the IGBT device loss evaluation method provided by the embodiments of the present application.

[0013] Figure 3 The unit schematic diagram of the IGBT device loss evaluation device provided by the embodiments of the present application.

[0014] In the figure: 10-processor; 11-memory; 12-bus; 13-communication interface; 501-first processing unit; 502-second processing unit. DETAILED DESCRIPTION

[0015] In order to make the objectives, technical solutions and advantages of the embodiments of the present application more apparent, the following will combine the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0016] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of the present application.

[0017] It should be noted that like reference numerals and characters refer to like elements throughout the following description with like reference numerals and characters referring to like elements throughout the following description and across all figures. It should be noted that as used herein, the terms "first", "second", and the like, do not imply relative importance or do not imply a relation of order, but rather are used to distinguish a common element. In addition, the terms "comprise", "include", along with their derivatives, do not exclude other elements or steps. The term "coupled" is used herein to express either an indirect or direct electrical connection between elements.

[0018] It should be noted that as used herein, the terms "first", "second", and the like, do not imply relative importance or do not imply a relation of order, but rather are used to distinguish a common element. In addition, the terms "comprise", "include", along with their derivatives, do not exclude other elements or steps. The term "coupled" is used herein to express either an indirect or direct electrical connection between elements.

[0019] Some embodiments of the present application will be described in detail with reference to the drawings, wherein like reference numerals refer to like elements throughout the several views. Embodiments described below and characteristics in the embodiments can be combined with each other in the case of no conflict.

[0020] The electronic device can be a server device, a computer device or a test bench device. Please refer to Figure 1 , a structural schematic diagram of the electronic device. The electronic device includes a processor 10, a memory 11 and a bus 12. The processor 10 and the memory 11 are connected through the bus 12. The processor 10 is used to execute an executable module stored in the memory 11, such as a computer program.

[0021] The processor 10 can be an integrated circuit chip with signal processing capability. In implementation, the steps of the IGBT device loss evaluation method can be completed by integrated logic circuits of hardware in the processor 10 or instructions in the form of software. The processor 10 described above can be a general processor, including a central processing unit (CPU), a network processor (NP), etc.; can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component.

[0022] The memory 11 can include a high-speed random access memory (RAM), and can also include a non-volatile memory, such as at least one disk memory.

[0023] The bus 12 can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, an EISA (Extended Industry Standard Architecture) bus, etc. Figure 1 Only one bidirectional arrow is used to represent the bus 12, but it does not mean that there is only one bus 12 or only one type of bus 12.

[0024] The memory 11 is used to store programs, such as programs corresponding to the IGBT device loss evaluation device. The IGBT device loss evaluation device includes at least one software function module which can be stored in the memory 11 in the form of software or firmware or solidified in the operating system (OS) of the electronic device. After receiving an execution instruction, the processor 10 executes the program to implement the IGBT device loss evaluation method.

[0025] Possibly, the electronic device provided by the embodiment of the present application further includes a communication interface 13. The communication interface 13 is connected with the processor 10 through the bus.

[0026] It should be understood that, Figure 1The structure shown is only a partial schematic diagram of the electronic device; the electronic device may also include components that are larger than... Figure 1 The more or fewer components shown, or having the same Figure 1 The different configurations shown. Figure 1 The components shown can be implemented using hardware, software, or a combination thereof.

[0027] The IGBT device loss assessment method provided in this embodiment of the invention can be applied to, but is not limited to, [various applications]. Figure 1 For the specific process of the electronic devices shown, please refer to [link / reference]. Figure 2 The loss assessment methods for IGBT devices include S11, S12, S13, S14, and S15, which are described in detail below.

[0028] S11, Based on the average conduction current of the IGBT in each conduction segment during the current cycle, obtain the IGBT's junction temperature... The conduction loss is below.

[0029] The IGBT device includes an IGBT transistor and a fast recovery diode (FRD) connected to the emitter and collector of the IGBT transistor.

[0030] S12, based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle, obtain the junction temperature of the IGBT transistor. Switching losses below.

[0031] The switching current includes the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off. The stray inductance deviation value is the difference between the standard stray inductance of the test loss (recorded in the device datasheet) and the actual stray inductance of the test loss (obtained by measurement).

[0032] S13, based on the average conduction current of the fast recovery diode in each conduction segment during the current cycle, obtain the junction temperature of the fast recovery diode. The conduction loss is below.

[0033] S14, based on the on-current and stray inductance deviation values ​​corresponding to each turn-off of the fast recovery diode within the current cycle, obtain the junction temperature of the fast recovery diode. The reverse recovery loss below.

[0034] S15. Based on the obtained conduction loss, switching loss, and reverse recovery loss, determine the total loss of the IGBT device.

[0035] It should be understood that the total loss is the IGBT transistor's loss at junction temperature. The conduction loss of the IGBT at the junction temperature Switching losses and fast recovery diodes at junction temperature and the reverse recovery loss of the fast recovery diode at the junction temperature .

[0036] In the IGBT device loss evaluation method provided by the embodiment of the present application, the accurate switching loss and reverse recovery loss are obtained by introducing the stray inductance deviation value, and thus the accuracy of the total loss evaluation result is ensured.

[0037] On the basis of the foregoing, regarding the content in S11, the embodiment of the present application further provides an alternative implementation, please refer to the following. S11, according to the average value of the conduction current of the IGBT tube in each conduction section in the current cycle, obtaining the conduction loss of the IGBT tube at the junction temperature , comprising: S111 and S112, which are specifically described as follows.

[0038] S111, obtaining the conduction voltage drop corresponding to the average value of the conduction current of the IGBT tube in each conduction section at the junction temperature .

[0039] In an alternative implementation, first, the adjacent test junction temperature adjacent to the junction temperature and , wherein, ≤ ≤ . Optionally, when , the value of can be 125℃, the value of can be 150℃.

[0040] Then, according to the first group of fitting functions corresponding to the adjacent test junction temperature of the IGBT tube, obtaining the conduction voltage drop corresponding to the average value of the conduction current of the IGBT tube in each conduction section at the adjacent test junction temperature and .

[0041] Optionally, the formula of the first group of fitting functions is:

[0042]

[0043] wherein, represents the average value of the conduction current of the IGBT tube in the nth conduction section, represents the reference on-state voltage drop of the IGBT tube at the junction temperature , represents the reference on-state resistance of the IGBT tube at the junction temperature , represents the reference current of the IGBT tube at the junction temperature . The on-state voltage drop, This indicates the junction temperature of the IGBT transistor. The corresponding reference on-state voltage drop, This indicates the junction temperature of the IGBT transistor. The corresponding reference on-state resistance, This indicates the junction temperature of the IGBT transistor. The corresponding current below The conduction voltage drop.

[0044] Finally, based on the junction temperature near the test... and The on-state voltage drop corresponding to the average on-state current of the IGBT transistor in each conduction segment is obtained at the junction temperature. The on-state voltage drop corresponding to the average on-state current of the lower IGBT transistor in each conduction segment.

[0045] At junction temperature The formula for calculating the on-state voltage drop corresponding to the average on-state current of the lower IGBT transistor in each conduction segment is:

[0046] in, With the following text The same indicates that the IGBT transistor is at the same junction temperature. The corresponding current below The conduction voltage drop.

[0047] S112, based on the junction temperature By analyzing the average on-state current, on-state voltage drop, and duration of each on-state segment of the IGBT transistor, the junction temperature of the IGBT transistor can be determined. The conduction loss is below.

[0048] Optionally, the IGBT transistor at the junction temperature The formula for the conduction loss is:

[0049] in, This indicates the current cycle that flows through the IGBT device. This indicates the junction temperature of the IGBT transistor during the corresponding current cycle. This indicates the junction temperature of the IGBT transistor. The conduction loss is given by m1, where m1 represents the total number of conduction segments of the IGBT within the current cycle, and n represents the nth conduction segment of the IGBT within the current cycle. This represents the average conduction current of the IGBT in the nth conduction segment. This indicates the junction temperature of the IGBT transistor. The corresponding current below The on-state voltage drop, This indicates the duration of the nth conducting segment.

[0050] Based on the preceding text, regarding the content of S12, this embodiment of the invention also provides an optional implementation method, please refer to the following: S12, based on the switching current and stray inductance deviation value of the IGBT transistor in each current cycle, obtain the junction temperature of the IGBT transistor. The switching losses under these conditions include: S121, S122 and S123, which are described in detail below.

[0051] S121, based on the junction temperature Determine the corresponding single-turn-on loss by analyzing the on-current of the IGBT each time it is turned on.

[0052] First, based on the second set of fitting functions corresponding to the junction temperature near the test temperature of the IGBT, the junction temperature near the test temperature is obtained. and The single turn-on loss corresponding to the conduction current after each turn-on of the lower IGBT.

[0053] It should be understood that, by conducting appropriate experiments near the test junction temperature to obtain corresponding data, the first and second sets of fitting functions described above can be obtained. The formula for the second set of fitting functions is:

[0054]

[0055] in, This represents the on-state current after the IGBT transistor is turned on for the 4th time. This indicates the rated current of the IGBT transistor. , , , For IGBT transistors at junction temperature The corresponding fitting parameters are as follows. This indicates the junction temperature of the IGBT transistor. The single-pulse switching loss under the condition, This indicates the nominal resistance, which is the rated resistance connected between the collector and emitter of the IGBT. Indicates the junction temperature The single activation loss corresponding to the ta4th activation. , , , For IGBT transistors at junction temperature The corresponding fitting parameters are as follows. This indicates the junction temperature of the IGBT transistor. The single-pulse switching loss is specified below, and the nominal resistance is the rated resistance connected between the collector and emitter of the IGBT. Indicates the junction temperature The single activation loss corresponding to the ta4th activation.

[0056] Then, based on the junction temperature near the test... and The single turn-on loss corresponding to the conduction current after each turn-on of the IGBT is determined at the junction temperature. The single turn-on loss corresponding to the conduction current after each turn-on of the lower IGBT.

[0057] At junction temperature The formula for the single turn-on loss corresponding to the conduction current after each turn-on of the lower IGBT is:

[0058] in, and Same indicates junction temperature The single activation loss corresponding to the ta4th activation.

[0059] S122, obtain the junction temperature Determine the corresponding turn-off loss by analyzing the on-current of the IGBT before each turn-off.

[0060] First, based on the third set of fitting functions corresponding to the junction temperature near the test temperature of the IGBT, the junction temperature near the test temperature is obtained. and The single turn-off loss corresponding to the conduction current before each turn-off of the lower IGBT transistor.

[0061] It should be understood that an appropriate experiment was conducted near the test junction temperature to obtain the corresponding data, which yielded the third set of fitting functions. The third set of fitting functions is similar to the second set of fitting functions, and will not be elaborated here.

[0062] Then, based on the junction temperature near the test... and The single turn-off loss corresponding to the conduction current after each turn-off of the lower IGBT transistor is determined at the junction temperature. The single turn-off loss corresponding to the conduction current after each turn-off of the lower IGBT transistor.

[0063] It should be understood that at the junction temperature The formula for calculating the single turn-off loss corresponding to the conduction current after each turn-off of the IGBT transistor and the junction temperature... The formula for the single turn-on loss corresponding to the conduction current after each turn-on of the lower IGBT is similar and will not be repeated here.

[0064] S123, based on the obtained single turn-on loss, single turn-off loss, and stray inductance deviation values, obtain the IGBT transistor's junction temperature... Switching losses below.

[0065] Optionally, the IGBT transistor at the junction temperature The formula for the switching loss is:

[0066] in, This indicates the junction temperature of the IGBT transistor. Switching losses below, This indicates the current cycle that flows through the IGBT device. This represents the actual value of the DC voltage applied across the IGBT assembly. The IGBT assembly includes two IGBT devices connected in series (i.e., a first IGBT device and a second IGBT device, with the collector C of the first IGBT device connected to Vd+, the emitter E of the first IGBT device connected to the collector C of the second IGBT device, and the emitter E of the second IGBT device connected to Vd-, and the gates of both connected to the control terminal of a three-phase inverter). This indicates the rated DC voltage applied across the IGBT assembly. Denotes the first fitting coefficient. The second fitting coefficient is represented by n1, which represents the total number of times the IGBT is turned on within the current cycle; n2 represents the total number of times the IGBT is turned off within the current cycle; ta4 represents the ta4th turn-on of the IGBT within the current cycle; and tb4 represents the tb4th turn-off of the IGBT within the current cycle. This indicates the junction temperature of the IGBT transistor during the corresponding current cycle. This represents the on-state current after the IGBT transistor is turned on for the 4th time. This represents the on-state current of the IGBT before the 4th turn-off. Indicates the junction temperature The single activation loss corresponding to the ta4th activation. Indicates the junction temperature The single-turn-off loss corresponding to the tb4th turn-off. The standard stray inductance representing the test loss is described in the device datasheet. The actual stray inductance (obtained by measurement) represents the test loss.

[0067] Based on the preceding text, regarding the content of S13, this embodiment of the invention also provides an optional implementation method, please refer to the following: S13, based on the average conduction current of the fast recovery diode in each conduction segment within the current cycle, obtain the junction temperature of the fast recovery diode. The conduction losses include S131 and S132, which are described in detail below.

[0068] S131, obtain the junction temperature The forward voltage drop corresponding to the average forward current of the fast recovery diode in each conduction segment.

[0069] It should be understood that obtaining the junction temperature The method of obtaining the on-state voltage drop corresponding to the average on-state current of the fast recovery diode in each conduction segment, along with S111, at the junction temperature... The method for calculating the on-state voltage drop corresponding to the average on-state current of the lower IGBT in each conduction segment is similar and will not be elaborated here.

[0070] S132, based on the junction temperature By analyzing the average conduction current, on-state voltage drop, and duration of each conduction segment of the fast recovery diode, the optimal junction temperature for the fast recovery diode is determined. The conduction loss is below.

[0071] Optionally, the fast recovery diode at junction temperature The formula for the conduction loss is:

[0072] in, This indicates the current cycle that flows through the IGBT device. This indicates the junction temperature of the fast recovery diode during the corresponding current cycle. This indicates the fast recovery diode at junction temperature The conduction loss is given by m2, where m2 represents the total number of conduction segments of the fast recovery diode within the current cycle, and q represents the qth conduction segment of the fast recovery diode within the current cycle. This represents the average conduction current of the fast recovery diode during the q-th conduction phase. Indicates the junction temperature The corresponding current below The on-state voltage drop, This indicates the duration of the q-th conducting segment.

[0073] Based on the preceding text, regarding the content of S14, this embodiment of the invention also provides an optional implementation method, please refer to the following: S14, based on the conduction current and stray inductance deviation value corresponding to each turn-off of the fast recovery diode within the current cycle, obtain the junction temperature of the fast recovery diode. The reverse recovery loss includes S141 and S142, which are described in detail below.

[0074] S141, based on the junction temperature Determine the corresponding single reverse recovery loss by analyzing the on-current before each turn-off of the fast recovery diode.

[0075] It should be understood that the implementation of S141, like S121, depends on the junction temperature. The method for determining the corresponding single-turn-on loss after each IGBT transistor turn-on is similar and will not be elaborated here.

[0076] S142, based on the obtained single reverse recovery loss and stray inductance deviation value, obtain the junction temperature of the fast recovery diode. The reverse recovery loss below.

[0077] Optionally, the fast recovery diode at junction temperature The formula for the reverse recovery loss is:

[0078] in, This indicates the fast recovery diode at junction temperature The reverse recovery loss below, This indicates the current cycle that flows through the IGBT device. This represents the actual value of the DC voltage applied across the IGBT assembly. The IGBT assembly includes two IGBT devices connected in series (i.e., a first IGBT device and a second IGBT device, with the collector C of the first IGBT device connected to Vd+, the emitter E of the first IGBT device connected to the collector C of the second IGBT device, and the emitter E of the second IGBT device connected to Vd-, and the gates of both connected to the control terminal of a three-phase inverter). This indicates the rated DC voltage applied across the IGBT assembly. Represents the third fitting coefficient. denoted by the fourth fitting coefficient, n3 represents the total number of times the fast recovery diode is turned off within the current cycle, and tc represents the tcth turn-off of the fast recovery diode within the current cycle. This indicates the junction temperature of the fast recovery diode during the corresponding current cycle. This represents the on-current of the fast recovery diode before the tc-th turn-off. Indicates the junction temperature The single reverse recovery loss corresponding to the next tc-th shutdown. The standard stray inductance representing the test loss is described in the device datasheet. The actual stray inductance (obtained by measurement) represents the test loss. Please see Figure 3 , Figure 3An IGBT device loss assessment device is provided as an embodiment of the present invention. Optionally, the IGBT device loss assessment device is applied to the electronic device described above.

[0079] The IGBT device loss assessment device includes a first processing unit 501 and a second processing unit 502, which are described in detail below.

[0080] The first processing unit 501 is used to obtain the junction temperature of the IGBT based on the average conduction current of the IGBT in each conduction segment during the current cycle. The conduction loss is as follows: The IGBT device includes an IGBT transistor and a fast recovery diode (FRD) connected to the emitter and collector of the IGBT transistor. The first processing unit 501 is also used to obtain the junction temperature of the IGBT based on the switching current and stray inductance deviation values ​​of the IGBT during each current cycle. The switching losses are calculated as follows: the switching current includes the on-current after each turn-on and the on-current before each turn-off; the stray inductance deviation value is the difference between the standard stray inductance of the test loss (described in the device datasheet) and the actual stray inductance of the test loss (obtained by measurement). The first processing unit 501 is further configured to obtain the junction temperature of the fast recovery diode based on the average conduction current of the fast recovery diode in each conduction segment during the current cycle. The conduction loss is below; The first processing unit 501 is further configured to obtain the fast recovery diode at the junction temperature based on the on-current and stray inductance deviation values ​​corresponding to each turn-off of the fast recovery diode within the current cycle. The reverse recovery loss below; The second processing unit 502 is used to determine the total loss of the IGBT device based on the obtained conduction loss, switching loss and reverse recovery loss.

[0081] It should be noted that the IGBT device loss assessment device provided in this embodiment can execute the method flow shown in the above-described method flow embodiment to achieve the corresponding technical effects. For the sake of brevity, any parts not mentioned in this embodiment can be referred to the corresponding content in the above-described embodiments.

[0082] This invention also provides a storage medium storing computer instructions and programs, which, when read and executed, perform the IGBT device loss assessment method described above. The storage medium may include memory, flash memory, registers, or a combination thereof.

[0083] The following provides an electronic device, which may be a server device, a computer device, or a test bench device. This electronic device, as follows... Figure 1As shown, the above-described IGBT device loss assessment method can be implemented. Specifically, the electronic device includes: a processor 10, a memory 11, and a bus 12. The processor 10 may be a CPU. The memory 11 is used to store one or more programs, which, when executed by the processor 10, execute the IGBT device loss assessment method of the above embodiment.

[0084] In summary, the embodiments of the present invention provide an IGBT device loss assessment method, apparatus, dielectric and electronic equipment that obtains the IGBT device's junction temperature based on the average conduction current of each conduction segment within the current cycle. The conduction loss at the junction temperature is obtained by considering the switching current and stray inductance deviation of the IGBT during each current cycle. To determine the switching losses, the average conduction current of the fast recovery diode during each conduction period is used to obtain the switching losses at the junction temperature. The conduction loss at the junction temperature is determined by the on-state current and stray inductance deviation of the fast recovery diode before each turn-off within the current cycle. The reverse recovery loss is calculated; based on the obtained conduction loss, switching loss, and reverse recovery loss, the total loss of the IGBT device is determined. By introducing stray inductance deviation values, accurate switching loss and reverse recovery loss are obtained, thus ensuring the accuracy of the total loss assessment results.

[0085] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

[0086] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A method for evaluating the loss of an IGBT device, characterized in that, The method includes: Based on the average conduction current of the IGBT in each conduction segment during the current cycle, the junction temperature of the IGBT is obtained. The conduction loss is as follows: The IGBT device includes an IGBT transistor and a fast recovery diode connected to the emitter and collector of the IGBT transistor. Based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle, the junction temperature of the IGBT transistor is obtained. The switching loss is calculated as follows: the switching current includes the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off; the stray inductance deviation value is the difference between the standard stray inductance of the test loss and the actual stray inductance of the test loss. Based on the average conduction current of the fast recovery diode in each conduction segment during the current cycle, the junction temperature of the fast recovery diode is obtained. The conduction loss is below; Based on the on-current of the fast recovery diode before each turn-off within the current cycle and the stray inductance deviation value, the junction temperature of the fast recovery diode is obtained. The reverse recovery loss below; The total loss of the IGBT device is determined based on the obtained conduction loss, switching loss, and reverse recovery loss.

2. The IGBT device loss assessment method as described in claim 1, characterized in that, The method involves obtaining the average conduction current of the IGBT transistor during each conduction segment of the current cycle, based on the average conduction current of the IGBT transistor at the junction temperature. The conduction losses include: Obtain at junction temperature The on-state voltage drop corresponding to the average on-state current of the lower IGBT transistor in each conduction segment; Based on the junction temperature By analyzing the average on-state current, on-state voltage drop, and duration of each on-state segment of the IGBT transistor, the junction temperature of the IGBT transistor can be determined. The conduction loss is below.

3. The IGBT device loss assessment method as described in claim 1, characterized in that, The method involves obtaining the IGBT's junction temperature based on the switching current and stray inductance deviation values ​​for each current cycle within the IGBT. The switching losses include: Based on the junction temperature Determine the corresponding single turn-on loss by determining the on-current after each turn-on of the IGBT. Obtain at junction temperature Determine the corresponding single turn-off loss by determining the on-current before each turn-off of the lower IGBT transistor. Based on the obtained single turn-on loss, single turn-off loss, and stray inductance deviation value, the junction temperature of the IGBT transistor is obtained. Switching losses below.

4. The IGBT device loss assessment method as described in claim 3, characterized in that, IGBT tubes at junction temperature The formula for the switching loss is: in, This indicates the junction temperature of the IGBT transistor. Switching losses below, This indicates the current cycle that flows through the IGBT device. This represents the actual value of the DC voltage applied across the IGBT assembly, which consists of two IGBT devices connected in series. This indicates the rated DC voltage applied across the IGBT assembly. Denotes the first fitting coefficient. The second fitting coefficient is represented by n1, which represents the total number of times the IGBT is turned on within the current cycle; n2 represents the total number of times the IGBT is turned off within the current cycle; ta4 represents the ta4th turn-on of the IGBT within the current cycle; and tb4 represents the tb4th turn-off of the IGBT within the current cycle. This indicates the junction temperature of the IGBT transistor during the corresponding current cycle. This represents the on-state current after the IGBT transistor is turned on for the 4th time. This represents the on-state current of the IGBT before the 4th turn-off. Indicates the junction temperature The single activation loss corresponding to the ta4th activation. Indicates the junction temperature The single-turn-off loss corresponding to the tb4th turn-off. The standard stray inductance representing the test loss This represents the actual stray inductance at the test loss.

5. The IGBT device loss assessment method as described in claim 1, characterized in that, The fast recovery diode is obtained by calculating the average conduction current of each conduction segment within the current cycle, based on the junction temperature of the fast recovery diode. The conduction losses include: Obtain at junction temperature The forward voltage drop corresponding to the average forward current of the fast recovery diode in each conduction segment; Based on the junction temperature By analyzing the average conduction current, on-state voltage drop, and duration of each conduction segment of the fast recovery diode, the optimal junction temperature for the fast recovery diode is determined. The conduction loss is below.

6. The IGBT device loss assessment method as described in claim 1, characterized in that, The fast recovery diode is obtained at the junction temperature based on the on-current before each turn-off within the current cycle and the stray inductance deviation value. The reverse recovery loss includes: Based on the junction temperature Determine the corresponding single reverse recovery loss by determining the on-current before each turn-off of the fast recovery diode. Based on the obtained single reverse recovery loss and the stray inductance deviation value, the fast recovery diode at the junction temperature is obtained. The reverse recovery loss below.

7. The IGBT device loss assessment method as described in claim 6, characterized in that, Fast recovery diode at junction temperature The formula for the reverse recovery loss is: in, This indicates the fast recovery diode at junction temperature The reverse recovery loss below, This indicates the current cycle that flows through the IGBT device. This represents the actual value of the DC voltage applied across the IGBT assembly, which consists of two IGBT devices connected in series. This indicates the rated DC voltage applied across the IGBT assembly. Represents the third fitting coefficient. denoted by the fourth fitting coefficient, n3 represents the total number of times the fast recovery diode is turned off within the current cycle, and tc represents the tcth turn-off of the fast recovery diode within the current cycle. This indicates the junction temperature of the fast recovery diode during the corresponding current cycle. This represents the on-current of the fast recovery diode before the tc-th turn-off. Indicates the junction temperature The single reverse recovery loss corresponding to the next tc-th shutdown. The standard stray inductance representing the test loss This represents the actual stray inductance at the test loss.

8. An IGBT device loss assessment device, characterized in that, The device includes: The first processing unit is used to obtain the junction temperature of the IGBT based on the average conduction current of the IGBT in each conduction segment during the current cycle. The conduction loss is as follows: The IGBT device includes an IGBT transistor and a fast recovery diode connected to the emitter and collector of the IGBT transistor. The first processing unit is further configured to obtain the junction temperature of the IGBT transistor based on the switching current and stray inductance deviation values ​​of the IGBT transistor during each current cycle. The switching loss is calculated as follows: the switching current includes the conduction current corresponding to each turn-on and the conduction current corresponding to each turn-off; the stray inductance deviation value is the difference between the standard stray inductance of the test loss and the actual stray inductance of the test loss. The first processing unit is further configured to obtain the junction temperature of the fast recovery diode based on the average conduction current of the fast recovery diode in each conduction segment during the current cycle. The conduction loss is below; The first processing unit is further configured to obtain the fast recovery diode at the junction temperature based on the on-state current corresponding to each turn-off of the fast recovery diode within the current cycle and the stray inductance deviation value. The reverse recovery loss below; The second processing unit is used to determine the total loss of the IGBT device based on the obtained conduction loss, switching loss, and reverse recovery loss.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the IGBT device loss assessment method as described in any one of claims 1-7.

10. An electronic device, characterized in that, include: Processor and memory, the memory being used to store one or more programs; When the processor executes the one or more programs, it implements the IGBT device loss assessment method as described in any one of claims 1-7.

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