Preparation method of driving substrate, driving substrate, display panel and display terminal
By using halftone masks to form different photoresist regions on the pixel electrode layer, the problem of water vapor erosion of pixel electrodes under high temperature and high humidity conditions is solved, achieving the effect of simplifying the process and reducing costs.
Patent Information
- Application Number
- CN202511233817.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-29
- Publication Date
- 2025-12-05
AI Technical Summary
In high-temperature and high-humidity environments, the pixel electrodes of existing display panels are susceptible to moisture erosion, leading to increased resistance and burn-in issues. Existing insulation processes increase manufacturing costs and process complexity.
A halftone mask is used to form a photoresist-free area, a half-photoresist area, and a full photoresist area on the pixel electrode layer. The difference in photoresist layer forms a preset pattern and an insulating layer, simplifying the process and eliminating the need for an additional photomask.
The process was simplified, the manufacturing cost was reduced, the production efficiency and product yield were improved, the processing error was reduced, and the insulation and protection effect was guaranteed.
Smart Images
Figure CN121069709A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of display, in particular to a preparation method of a driving substrate, a driving substrate, a display panel and a display terminal. BACKGROUND
[0002] In a high-temperature and high-humidity environment, the quality of a display is easily affected. Research has found that external moisture in a high-temperature and high-humidity environment slowly penetrates through frame glue or optical glue to reach a pixel electrode, causing the pixel electrode to undergo electrochemical corrosion. In particular, for the pixel electrode at each via hole in the driving circuit, since there is a height difference between the high point and the low point, the pixel electrode at the low point is prone to a reduction reaction, resulting in an increase in resistance and a burnout problem, and ultimately causing damage to the driving substrate.
[0003] To solve the above problems, the manufacturing process of the existing display panel usually performs insulation treatment on the pixel electrode to block the water vapor erosion. However, in order to ensure that the insulation layer can form a predetermined pattern to cover the area of the pixel electrode that needs to be protected, the insulation treatment needs to be completed by exposure and etching, which means that a mask for exposure needs to be added to the original preparation process, which will increase the complexity of the process flow and result in high preparation cost. SUMMARY
[0004] The purpose of the present application is to provide a preparation method of a driving substrate, aiming to solve the technical problem that the current insulation treatment of the pixel electrode needs to add a mask, resulting in increased complexity of the process flow and high preparation cost.
[0005] To achieve the above purpose, the preparation method of the driving substrate provided by the present application comprises the following steps:
[0006] Exposing the pixel electrode layer covered with a photoresist layer by using a half-tone mask to form a no-photoresist area, a half-photoresist area and a full-photoresist area on the pixel electrode layer; the half-photoresist area is opposite to the protection area of the pixel electrode layer, and the full-photoresist area is opposite to the connection area of the pixel electrode layer;
[0007] Removing the pixel electrode layer in the no-photoresist area to form a pixel electrode pattern;
[0008] Removing the photoresist layer in the half-photoresist area;
[0009] Depositing a pixel insulation layer on the pixel electrode layer, the pixel insulation layer covering the pixel electrode layer in the half-photoresist area and the photoresist layer in the full-photoresist area;
[0010] Stripping the photoresist layer, so that the pixel insulation layer in the full-photoresist area is separated from the photoresist layer.
[0011] In an embodiment, before the step of depositing a pixel insulating layer on the pixel electrode layer, the method comprises:
[0012] Performing surface treatment on the photoresist layer of the full photoresist area to form a velvet structure on the surface of the photoresist layer.
[0013] In an embodiment, the step of removing the pixel electrode layer of the non-photoresist area comprises:
[0014] The pixel electrode layer of the non-photoresist area is removed by a developing etching process.
[0015] In an embodiment, the step of removing the photoresist layer of the semi-photoresist area comprises:
[0016] The photoresist layer of the semi-photoresist area is removed by a dry etching process.
[0017] In an embodiment, after the step of removing the photoresist layer of the semi-photoresist area by a dry etching process, the method comprises:
[0018] Adjusting the dry etching process parameters and performing dry etching on the photoresist layer of the full photoresist area to form a velvet structure on the surface of the photoresist layer.
[0019] In an embodiment, the driving substrate is provided with a through-hole, and the semi-photoresist area covers the through-hole.
[0020] In an embodiment, before the step of exposing the pixel electrode layer covered with the photoresist layer by using a halftone mask, the method comprises:
[0021] Depositing a first metal layer, a gate insulating layer, a second metal layer, a passivation insulating layer and the pixel electrode layer on the surface of the substrate substrate in sequence;
[0022] Coating the photoresist layer on the pixel electrode layer.
[0023] Correspondingly, the present application also proposes a driving substrate prepared by using the preparation method of the driving substrate as described above.
[0024] Correspondingly, the present application also proposes a display panel comprising the driving substrate as described above.
[0025] Correspondingly, the present application also proposes a display terminal comprising the display panel as described above.
[0026] Compared with the prior art, the present application has the following beneficial effects:
[0027] The preparation method of the driving substrate provided in the application forms the no-resist region, the half-resist region and the full-resist region on the pixel electrode layer simultaneously through the half-tone mask, and the resist layer parameters of the three resist regions are different; the pixel electrode layer of the no-resist region can be directly removed to form the preset pixel electrode pattern without the protection of the resist layer, and the resist layer of the half-resist region can be removed to expose the pixel electrode layer; then, the pixel insulating layer is deposited on the pixel electrode layer of the half-resist region and the resist layer of the full-resist region, the pixel insulating layer can play a role of water vapor barrier for the pixel electrode layer of the half-resist region, avoiding damage caused by water vapor erosion; finally, the resist layer of the full-resist region is stripped, and the pixel insulating layer covering the resist layer is separated together, so that the pixel electrode layer of the full-resist region is exposed to facilitate electrical connection with the external circuit. The present scheme can complete the forming operation of the pixel electrode pattern, the insulation treatment operation of the protection region and the operation of exposing the connection region by using only one half-tone mask, without the need for additional masks, thereby simplifying the manufacturing process, improving the production efficiency of the driving substrate and reducing the preparation cost under the condition that the pixel insulating layer is fully insulated and protected from water vapor erosion; in addition, since the pixel electrode pattern forming, insulation treatment and connection region exposure operations are all based on the same half-tone mask, the uniformity of the position reference can be ensured, and compared with the scheme using multiple masks, the processing error can be reduced, thereby improving the product yield of the finally manufactured driving substrate. BRIEF DESCRIPTION OF DRAWINGS
[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained without creative labor based on the drawings shown.
[0029] Figure 1 The flowchart of the preparation method of the driving substrate of an embodiment of the present application;
[0030] Figure 2 The structural schematic diagram of the driving substrate before the exposure operation in the preparation method of the driving substrate of an embodiment of the present application;
[0031] Figure 3 The structural schematic diagram of the driving substrate after the exposure operation and the removal of the resist layer of the no-resist region in the preparation method of the driving substrate of an embodiment of the present application;
[0032] Figure 4 The structural schematic diagram of the driving substrate after the removal of the pixel electrode layer of the no-resist region in the preparation method of the driving substrate of an embodiment of the present application;
[0033] Figure 5 Figure 7 is a schematic diagram of a structure of the driving substrate after the photoresist layer in the semi-photoresist region is removed in an embodiment of the method for manufacturing the driving substrate of the present application;
[0034] Figure 6 Figure 8 is a schematic diagram of a structure of the driving substrate after the pixel insulating layer is deposited in an embodiment of the method for manufacturing the driving substrate of the present application;
[0035] Figure 7 Figure 9 is a schematic diagram of a structure of the driving substrate after the photoresist layer and the pixel insulating layer in the full-photoresist region are removed in an embodiment of the method for manufacturing the driving substrate of the present application.
[0036] BRIEF DESCRIPTION OF THE DRAWINGS
[0037] 100, no-photoresist region; 200, semi-photoresist region; 300, full-photoresist region;
[0038] 1, half-tone mask; 11, high-transmittance region; 12, medium-transmittance region; 13, low-transmittance region;
[0039] 2, photoresist layer;
[0040] 3, pixel electrode layer; 31, protection region; 32, connection region;
[0041] 4, pixel insulating layer; 5, transfer hole; 6, first metal layer; 7, gate insulating layer; 8, second metal layer; 9, passivation insulating layer; 10, substrate.
[0042] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION
[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.
[0044] It should be noted that if the directionality indication (such as up, down, left, right, front, back, etc.) is involved in the embodiments of the present application, the directionality indication is only used to explain the relative position relationship, movement condition, etc. between the components in a certain posture, and if the certain posture changes, the directionality indication also changes accordingly.
[0045] In addition, if the description of "first", "second" and the like is involved in the embodiments of the present application, the description of "first", "second" and the like is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can be explicitly or implicitly included at least one of the features. In addition, if "and / or" or "and / or" appears throughout the text, it means that the three parallel schemes are included, for example, "A and / or B" includes A scheme, or B scheme, or A and B scheme. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the realization of the ordinary skilled in the art, when the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, nor in the protection scope claimed by the present application.
[0046] In a high temperature and high humidity environment, the quality of the display is easily affected. It is found through research that the external water vapor in the high temperature and high humidity environment will slowly penetrate the frame glue or the optical glue to reach the pixel electrode, causing the pixel electrode to be electrochemically corroded; especially for the pixel electrodes at each transfer hole in the driving circuit, since there is a high-low point difference, the pixel electrode at the low point is prone to reduction reaction, resulting in an increase in resistance and burnout problem, ultimately causing the driving substrate to be damaged.
[0047] To solve the above problems, the manufacturing process of the existing display panel usually insulates the pixel electrode to block the water vapor erosion. However, in order to ensure that the insulating layer can form a predetermined pattern to cover the area of the pixel electrode that needs to be protected, the insulating treatment needs to be completed by exposure etching, which means that a mask for exposure needs to be added to the original preparation process, which will increase the complexity of the process flow and result in high preparation cost.
[0048] Based on the above problems, the present application provides a preparation method of a driving substrate, which aims to form different state photoresist layers in different areas of the pixel electrode layer through the characteristics of the half-tone mask, and then form the predetermined pixel electrode pattern and the predetermined insulating layer pattern by utilizing the difference of each photoresist layer, without adding a mask for completing the insulating treatment, thereby simplifying the process and reducing the preparation cost.
[0049] Please refer to Figure 1 , and in combination with Figure 2 and Figure 3 , the preparation method of the driving substrate provided by the present application comprises the following steps:
[0050] Exposure is performed on the pixel electrode layer 3 covered with the photoresist layer 2 by using the half-tone mask 1, so as to form the no-photoresist area 100, the half-photoresist area 200 and the full-photoresist area 300 on the pixel electrode layer 3; the half-photoresist area 200 is opposite to the protection area 31 of the pixel electrode layer 3, and the full-photoresist area 300 is opposite to the connecting area 32 of the pixel electrode layer 3;
[0051] The pixel electrode layer 3 of the no-photoresist area 100 is removed, so as to form the pixel electrode pattern;
[0052] The photoresist layer 2 of the half-photoresist area 200 is removed;
[0053] The pixel insulating layer 4 is deposited on the pixel electrode layer 3, and the pixel insulating layer 4 covers the pixel electrode layer 3 of the half-photoresist area 200 and the photoresist layer 2 of the full-photoresist area 300;
[0054] The photoresist layer 2 is peeled off, and the pixel insulating layer 4 of the full-photoresist area 300 is separated from the photoresist layer 2.
[0055] In the embodiment, the half-tone mask 1 (HTM, Halftone Mask) is a special mask, and the transmittance of the half-tone mask 1 is different in different areas, so that different exposure areas can be formed in the exposure process. Specifically, the half-tone mask 1 can be divided into a high-transmittance area 11, a medium-transmittance area 12 and a low-transmittance area 13. The light transmittance of the high-transmittance area 11 is higher, the light transmittance of the low-transmittance area 13 is lower, and the light transmittance of the medium-transmittance area 12 is between the light transmittance of the high-transmittance area 11 and the light transmittance of the low-transmittance area 13. The light transmittance of the medium-transmittance area 12 can be set according to the thickness of the photoresist layer 2 to be removed.
[0056] The material of the pixel electrode layer 3 can be indium tin oxide (ITO) or the like, and the pixel electrode layer 3 can be arranged on the substrate 10 of the driving substrate. An intermediate functional layer for conducting electricity, insulating, driving pixels and the like can be arranged between the pixel electrode layer 3 and the substrate 10, so as to ensure the normal work of the pixel electrode layer 3 and the whole driving substrate. The area of the pixel electrode layer 3 which is easily eroded by water vapor and needs to be protected by insulation treatment is called the protection area 31, for example, the area where the transition layer hole 5 exists. The area of the pixel electrode layer 3 which is used for electrical connection with external circuits is called the connecting area 32 (i.e., the bonding area). The connecting area 32 needs to be exposed and not covered by the insulating layer, so that after the preparation of the driving substrate, the circuit of the driving substrate can be electrically connected with external devices, modules and the like through wire bonding and other connection processes.
[0057] As Figure 2As shown, the photoresist layer 2 can be attached to the side of the pixel electrode layer 3 facing away from the substrate 10 by means of coating or other methods. The halftone mask 1 is positioned facing the photoresist layer 2 during the exposure process. The high transmittance region 11 of the halftone mask 1 has the same shape as the area on the pixel electrode layer 3 that needs to be removed and is positioned directly opposite it; the medium transmittance region 12 of the halftone mask 1 has the same shape as the protection zone 31 of the pixel electrode layer 3 and is positioned directly opposite it; the low transmittance region 13 of the halftone mask 1 has the same shape as the connection region 32 of the pixel electrode layer 3 and is positioned directly opposite it. After the photoresist layer 2 is exposed to a halftone mask 1 using an exposure light source (such as a UV light device), the chemical properties of the region on the photoresist layer 2 that is directly opposite the high transmittance region 11 are completely changed, forming a photoresist-free region 100; the chemical properties of the region on the photoresist layer 2 that is directly opposite the medium transmittance region 12 are partially changed, forming a half-photoresist region 200; and the chemical properties of the region on the photoresist layer 2 that is directly opposite the low transmittance region 13 are not changed, forming a full photoresist region 300.
[0058] After forming the aforementioned non-optoresistive region 100, half-optoresistive region 200, and full-optoresistive region 300, as follows: Figure 3 As shown, the driving substrate can be subjected to operations such as development. Under the chemical or physical action of the developing solution or other external agents, the photoresist layer 2 in the photoresist-free region 100, whose chemical properties have been completely altered, can be completely removed, exposing the pixel electrode layer 3 of the photoresist-free region 100; simultaneously, the photoresist layer 2 in the half-photoresist region 200, whose chemical properties have been altered, can be removed, while the portion of the photoresist layer 2 whose chemical properties have not been altered is retained, so that the pixel electrode layer 3 in the half-photoresist region 200 is still covered with a relatively thin photoresist layer 2; while the photoresist layer 2 in the full photoresist region 300 is completely retained. Figure 4 As shown, etching and other operations can then be performed on the driving substrate to completely remove the pixel electrode layer 3 in the non-photoresistive region 100 that has lost the protection of the photoresistive layer 2, while the pixel electrode layer 3 in the half-photoresistive region 200 and the pixel electrode layer 3 in the full-photoresistive region 300 are retained, thereby forming a preset pixel electrode pattern.
[0059] After obtaining the preset pixel electrode pattern, such as Figure 5 As shown, the photoresist layer 2 of the semi-photoresist region 200 can be removed by etching or other methods, while ensuring that the pixel electrode layer 3 of the semi-photoresist region 200 is not damaged. Once the photoresist layer 2 of the semi-photoresist region 200 is completely removed, as shown... Figure 6As shown, the pixel insulation layer 4 can be deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like, and will be attached to the surface of the pixel electrode layer 3 of the half-resist region 200 and the surface of the photoresist layer 2 of the full-resist region 300; the pixel insulation layer 4 can be made of a material having good electrical insulation performance and chemical stability to form a uniform protective layer, which can effectively prevent water vapor from penetrating into the protective region 31 of the pixel electrode layer 3 from the outside, thereby avoiding damage to the pixel electrode layer 3 due to water vapor erosion by the barrier protection effect of the pixel insulation layer 4.
[0060] When the deposition of the pixel insulation layer 4 is completed, as shown, Figure 7 the photoresist layer 2 of the full-resist region 300 can be removed by a chemical stripping agent or other means, while the pixel insulation layer 4 covering the photoresist layer 2 is also separated, so that the pixel electrode layer 3 of the full-resist region 300 is exposed, that is, to ensure that the connection region 32 of the pixel electrode layer 3 will not be blocked by the pixel insulation layer 4 and the photoresist layer 2, so that the circuit of the driving substrate can be electrically connected to external devices, modules, and the like through wire bonding or other connection processes at the connection region 32 (i.e., the bonding region).
[0061] It can be seen that, in the embodiment, the half-tone mask 1 is used to form the no-resist area 100, the semi-resist area 200 and the full-resist area 300 on the pixel electrode layer 3 at the same time, and the resist layer 2 in the three resist areas is different in parameters. The pixel electrode layer 3 in the no-resist area 100 can be removed directly to form a preset pixel electrode pattern under the protection of the no-resist layer 2, and the resist layer 2 in the semi-resist area 200 can be removed to expose the pixel electrode layer 3. Then, the pixel insulating layer 4 is deposited on the pixel electrode layer 3 in the semi-resist area 200 and the resist layer 2 in the full-resist area 300, and the pixel insulating layer 4 can prevent the pixel electrode layer 3 in the semi-resist area 200 from being damaged by water vapor. Finally, the resist layer 2 in the full-resist area 300 is peeled off, and the pixel insulating layer 4 on the resist layer 2 is also removed, so that the pixel electrode layer 3 in the full-resist area 300 is exposed to the outside to facilitate electrical connection with an external circuit. The present scheme can complete the forming of the pixel electrode pattern, the insulating treatment of the protection area 31 and the exposure of the connection area 32 by using only one half-tone mask 1, without the need for additional masks, thereby simplifying the manufacturing process, improving the production efficiency of the driving substrate and reducing the manufacturing cost while ensuring that the pixel insulating layer 4 is fully insulated and protected from water vapor. In addition, since the forming of the pixel electrode pattern, the insulating treatment and the exposure of the connection area 32 are all based on the same half-tone mask 1, the uniformity of the position reference can be ensured, and the processing error can be reduced compared to the scheme using multiple masks, thereby improving the product yield of the finally manufactured driving substrate.
[0062] In an embodiment, a light-transmitting plate (not shown in the figure) can be additionally arranged between the half-tone mask 1 and the resist layer 2. The light-transmitting plate can be provided with a plurality of light-transmitting areas with different light-transmitting rates, and the light-transmitting plate can be translated or rotated relative to the half-tone mask 1 in the horizontal plane to make different light-transmitting areas relative to the high-transmittance area 11, the medium-transmittance area 12 and the low-transmittance area 13 of the half-tone mask 1. In this way, more areas with different light-transmitting rates can be formed by different combinations of the half-tone mask 1 and the light-transmitting plate, that is, the exposure state of the resist layer 2 can be flexibly adjusted by the cooperation between the half-tone mask 1 and the light-transmitting plate, so that the thickness of the resist layer 2 after exposure and etching can be more accurately controlled, thereby better adapting to the preparation requirements of different driving substrates and different process conditions in subsequent operations, thereby improving the applicability of the preparation scheme.
[0063] In an embodiment, referring to Figure 1 , Figure 5 and Figure 6 , before the step of depositing the pixel insulating layer 4 on the pixel electrode layer 3, the method further comprises:
[0064] The photoresist layer 2 of the full photoresist region 300 is subjected to surface treatment to form a velvet structure on the surface of the photoresist layer 2.
[0065] In the present embodiment, the surface treatment of the photoresist layer 2 can be achieved by plasma treatment, chemical treatment, etc. The purpose is to form a velvet-like microstructure on the surface of the photoresist layer 2 to increase the roughness of the surface of the photoresist layer 2, so as to enhance the adhesion between the photoresist layer 2 of the full photoresist region 300 and the subsequently deposited pixel insulating layer 4, which helps the pixel insulating layer 4 to be separated from the photoresist layer 2 in the subsequent stripping process, thereby improving the preparation efficiency and product quality.
[0066] In an embodiment, referring to Figure 1 and Figure 4 , the step of removing the pixel electrode layer 3 of the no-photoresist region 100 comprises:
[0067] The pixel electrode layer 3 of the no-photoresist region 100 is removed by a developing etching process.
[0068] Specifically, after the photoresist layer 2 is exposed by the half-tone mask 1, the driving substrate can be immersed in a developing solution to remove the photoresist layer 2 (i.e. the photoresist layer 2 of the no-photoresist region 100) whose chemical properties have changed after exposure by the developing solution; then the pixel electrode layer 3 which loses the protection of the photoresist layer 2 is etched to remove the pixel electrode layer 3 of the no-photoresist region 100 to form the required pixel electrode pattern.
[0069] Based on the above-mentioned wet etching process, the photoresist layer 2 and the pixel electrode layer 3 can be quickly and accurately removed, so as to accurately control the shape and size of the pixel electrode pattern finally formed, meeting the preparation requirements of high-precision display panels.
[0070] In an embodiment, referring to Figure 1 and Figure 5 , the step of removing the photoresist layer 2 of the half-photoresist region 200 comprises:
[0071] The photoresist layer 2 of the half-photoresist region 200 is removed by a dry etching process.
[0072] Specifically, the dry etching process is to use high-energy particles in plasma to bombard the material, which are accelerated in the direction nearly perpendicular to the material plane under the action of an electric field and impact the material; this physical bombardment makes the material be quickly removed in the vertical direction; while in the horizontal direction, the etching rate is relatively slow due to the lack of sufficient energy or reaction conditions. Based on the anisotropic characteristics of the dry etching process, the etching depth and shape can be accurately controlled, the thin photoresist layer 2 in the half photoresist area 200 can be effectively removed, and at the same time, the over-etching of the pixel electrode layer 3 in the half photoresist area 200 and the mis-etching of the material layer around can be avoided, thereby ensuring the integrity of the pixel electrode layer 3 and the quality of the finally manufactured driving substrate.
[0073] In an embodiment, referring to Figure 1 , Figure 5 and Figure 6 , after the step of removing the photoresist layer 2 of the half photoresist area 200 by the dry etching process, the method comprises:
[0074] Adjusting the dry etching process parameters and dry etching the photoresist layer 2 of the full photoresist area 300 to form a velvet structure on the surface of the photoresist layer 2.
[0075] After removing the photoresist layer 2 of the half photoresist area 200 by the dry etching process, the photoresist layer 2 of the full photoresist area 300 can be further textured by adjusting the dry etching process parameters (such as gas composition, pressure, power, etc.). Specifically, the flow and proportion of the etching gas can be adjusted, and the pressure and power of the etching chamber can be adjusted, so that high-energy ions bombard the surface of the photoresist layer 2 of the full photoresist area 300 in a preset mode to form a uniform velvet structure on the surface of the photoresist layer 2. The velvet structure can increase the roughness of the surface of the photoresist layer 2, so as to enhance the adhesion between the photoresist layer 2 of the full photoresist area 300 and the subsequently deposited pixel insulating layer 4, which helps the pixel insulating layer 4 to be separated from the photoresist layer 2 in the subsequent stripping process, thereby improving the preparation efficiency and product quality.
[0076] The present scheme can continuously complete the removal and texturing operations of the photoresist layer 2 in the same dry etching equipment without transferring the driving substrate or switching to other processes, so that the whole operation process is more convenient and fast, thereby improving the production efficiency of the driving substrate and further reducing the preparation cost.
[0077] In an embodiment, referring to Figure 3 , the driving substrate is provided with a transfer hole 5, and the half photoresist area 200 covers the transfer hole 5.
[0078] Specifically, the through-hole 5 is a via structure in the driving substrate for realizing electrical connection between different material layers; for the pixel electrode layer 3 at the through-hole 5, since there is a height difference between the high point and the low point, the pixel electrode layer 3 at the low point is prone to reduction reaction, resulting in an increase in resistance and burnout problem, and finally causing damage to the driving substrate.
[0079] To solve the above problems, the present embodiment corresponds to cover the through-hole 5 with the semi-photosensitive area 200, so that after the pixel insulating layer 4 is deposited on the surface of the pixel electrode layer 3 in the semi-photosensitive area 200, the pixel insulating layer 4 can form good isolation and protection for the position of the through-hole 5 most susceptible to water vapor erosion, thereby ensuring the operation stability of the driving substrate and prolonging the service life of the driving substrate.
[0080] In an embodiment, referring to Figure 2 , before the step of exposing the pixel electrode layer 3 covered with the photoresist layer 2 by using the half-tone mask 1, the method comprises:
[0081] Depositing a first metal layer 6, a gate insulating layer 7, a second metal layer 8, a passivation insulating layer 9 and a pixel electrode layer 3 on the surface of the substrate 10 in sequence;
[0082] Coating the photoresist layer 2 on the pixel electrode layer 3.
[0083] Specifically, the first metal layer 6 can be composed of conductive metals such as aluminum and copper, and is used to form conductive lines such as gate lines. The gate insulating layer 7 can be made of insulating materials such as silicon dioxide and silicon nitride, and is used to form isolation and protection for the conductive lines of the first metal layer 6. The second metal layer 8 can be composed of materials such as molybdenum and aluminum, and is used to form electrode structures such as source and drain electrodes. The passivation insulating layer 9 can be made of materials such as silicon dioxide and silicon nitride, and is used to form isolation and protection for the second metal layer 8 and to provide a flat surface for the pixel electrode layer 3. The pixel electrode layer 3 is usually made of transparent conductive materials such as indium tin oxide (ITO), and is used to form pixel electrodes in the display panel. The photoresist layer 2 can be coated on the pixel electrode layer 3 by spin coating method, specifically, the photoresist solution is dropped on the surface of the pixel electrode layer 3, and then the photoresist solution is uniformly dispersed and formed into a thin film by high-speed rotation; by controlling the rotation speed and time, the thickness of the finally formed photoresist layer 2 can be adjusted; subsequent soft baking operation can also be performed to remove the solvent in the photoresist layer 2, thereby improving the adhesion and etching resistance of the photoresist layer 2.
[0084] Correspondingly, referring to Figures 2 to 7 , the present application also provides a driving substrate prepared by the preparation method of the driving substrate in any of the above embodiments.
[0085] The driving substrate provided by the embodiment has the same beneficial technical effects as the preparation method of the driving substrate in the above embodiment, that is, the half-tone mask 1 is used to simultaneously form the no-resist area 100, the half-resist area 200 and the full-resist area 300 on the pixel electrode layer 3, and the resist layer 2 of the three resist areas is different in parameters; the pixel electrode layer 3 of the no-resist area 100 can be directly removed to form a preset pixel electrode pattern under the protection of the no-resist layer 2, the resist layer 2 of the half-resist area 200 can be removed to expose the pixel electrode layer 3, then the pixel insulating layer 4 is deposited on the pixel electrode layer 3 of the half-resist area 200 and the resist layer 2 of the full-resist area 300, the pixel insulating layer 4 can play a role of water vapor barrier for the pixel electrode layer 3 of the half-resist area 200 to avoid damage caused by water vapor erosion, and finally the resist layer 2 of the full-resist area 300 is peeled off to separate the pixel insulating layer 4 thereon to expose the pixel electrode layer 3 of the full-resist area 300 for electrical connection with an external circuit. The present scheme can complete the forming operation of the pixel electrode pattern, the insulating treatment operation of the protection area 31 and the operation of exposing the connection area 32 by using only one half-tone mask 1, without the need of additional photomask, thereby simplifying the manufacturing process, improving the production efficiency of the driving substrate and reducing the preparation cost under the condition that the pixel insulating layer 4 is fully protected and free from water vapor erosion, and the position reference uniformity can be ensured based on the same half-tone mask 1 for the operations of forming the pixel electrode pattern, insulating treatment and exposing the connection area 32, thereby reducing the processing error compared with the scheme using multiple photomasks, and the product yield of the finally manufactured driving substrate can be improved.
[0086] Correspondingly, the embodiment of the present application further provides a display panel, which comprises the driving substrate in any of the above embodiments.
[0087] Specifically, the display panel can refer to a liquid crystal display panel. The display panel provided by the embodiment has the same beneficial technical effects as the driving substrate in the above embodiment, which will not be repeated here.
[0088] Correspondingly, the embodiment of the present application further provides a display terminal, which comprises the display panel in any of the above embodiments.
[0089] Specifically, the display terminal can include a television, a mobile phone, a tablet computer and other terminal devices with display function. The display terminal provided by the embodiment has the same beneficial technical effects as the display panel in the above embodiment, which will not be repeated here.
[0090] It should be noted that other contents of the preparation method of the driving substrate, the driving substrate, the display panel and the display terminal disclosed in the present application can refer to the prior art, which will not be repeated here.
[0091] The above merely provides the optional embodiments of the present application, and does not limit the patent scope of the present application, and any equivalent structure variations or direct / indirect applications in other related technical fields made based on the technical concepts of the present application, and contents of the present application specification and drawings are included in the patent protection scope of the present application.
Claims
1. A method for driving the production of a substrate, characterized by, The preparation method of the driving substrate comprises the following steps: exposing the pixel electrode layer covered with the photoresist layer by using a half-tone mask to form a non-photoresist area, a half-photoresist area and a full-photoresist area on the pixel electrode layer; the half-photoresist area is opposite to the protection area of the pixel electrode layer, and the full-photoresist area is opposite to the connecting area of the pixel electrode layer; removing the pixel electrode layer of the non-photoresist area to form a pixel electrode pattern; removing the photoresist layer of the half-photoresist area; depositing a pixel insulating layer on the pixel electrode layer, the pixel insulating layer covering the pixel electrode layer of the half-photoresist area and the photoresist layer of the full-photoresist area; stripping the photoresist layer, so that the pixel insulating layer of the full-photoresist area is separated from the photoresist layer.
2. The production method of a driving substrate according to claim 1, wherein Before the step of depositing a pixel insulating layer on the pixel electrode layer, the following step is included: performing surface treatment on the photoresist layer of the full-photoresist area to form a velvet structure on the surface of the photoresist layer.
3. The production method of a driving substrate according to claim 1, wherein The step of removing the pixel electrode layer of the non-photoresist area comprises the following step: removing the pixel electrode layer of the non-photoresist area by a developing etching process.
4. The production method of a driving substrate according to claim 1, wherein The step of removing the photoresist layer of the half-photoresist area comprises the following step: removing the photoresist layer of the half-photoresist area by a dry etching process.
5. The production method of a driving substrate according to claim 4, wherein After the step of removing the photoresist layer of the half-photoresist area by a dry etching process, the following step is included: adjusting the dry etching process parameters and performing dry etching on the photoresist layer of the full-photoresist area to form a velvet structure on the surface of the photoresist layer.
6. The production method of a driving substrate according to claim 1, wherein The driving substrate is provided with a transfer hole, and the half-photoresist area covers the transfer hole.
7. The production method of a driving substrate according to any one of claims 1 to 6, wherein Before the step of exposing the pixel electrode layer covered with the photoresist layer by using a half-tone mask, the following steps are included: sequentially depositing a first metal layer, a gate insulating layer, a second metal layer, a passivation insulating layer and the pixel electrode layer on the surface of a substrate; coating the photoresist layer on the pixel electrode layer.
8. A drive substrate, characterized by, The driving substrate is prepared by using the preparation method of the driving substrate according to any one of claims 1 to 7.
9. A display panel, characterized by, The display panel comprises the driving substrate according to claim 8.
10. A display terminal, characterized by The display terminal comprises the display panel according to claim 9.