Transport apparatus, semiconductor manufacturing system, and transport method

Abstract

The invention provides a transport apparatus, a semiconductor manufacturing system, and a transport method. The invention provides a technology capable of reducing manufacturing cost and improving conveying efficiency of a substrate and a frame. The transport device includes a transport arm and a moving mechanism that moves the transport arm. The conveying arm is provided with an end effector, and the end effector is provided with a first supporting part and a second supporting part, wherein the first supporting part can support a substrate from the lower portion, and the second supporting part can support a frame arranged around the substrate from the lower portion. The end effector is provided with the first supporting part and the second supporting part, so that the conveying device can reduce the manufacturing cost, and can improve the conveying efficiency of the substrate and the frame.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a transport apparatus, a semiconductor manufacturing system, and a transport method. BACKGROUND

[0002] A peeling system (semiconductor manufacturing system) that peels a stacked substrate held in a holding jig having a cutting frame and a cutting tape into a processed substrate (substrate with a tape frame) and a support substrate is disclosed in Patent Literature 1.

[0003] The peeling system transports the stacked substrate with a tape frame in which the stacked substrate is held by the holding jig to a peeling station by a first transport apparatus of a first processing module to perform peeling processing. In addition, the peeling system transports the substrate with a tape frame after peeling to a first cleaning station by the first transport apparatus to perform cleaning processing, and transports the substrate with a tape frame after cleaning to an input / output station by the first transport apparatus. Furthermore, the peeling system transports the support substrate after peeling to a second cleaning station of a second processing module by a third transport apparatus to perform cleaning processing, and transports the support substrate after cleaning to an output station by a second transport apparatus.

[0004] Prior art documents

[0005] Patent documents

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2014-053463 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] The present disclosure provides a technology capable of reducing manufacturing costs and improving transport efficiency of a substrate and a frame.

[0009] SOLUTION TO PROBLEM

[0010] According to a technical solution of the present disclosure, a transport apparatus is provided, which has a transport arm and a movement mechanism that moves the transport arm, wherein the transport arm has an end effector having a first support portion that can support a substrate from below and a second support portion that can support a frame disposed around the substrate from below on one sheet.

[0011] EFFECT OF THE INVENTION

[0012] According to a technical solution, manufacturing costs can be reduced and transport efficiency of a substrate and a frame can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a plan view of a peeling system of an embodiment.

[0014] Figure 2 isFigure 1 FIG. 6 is a longitudinal sectional view of the peeling system of FIG. 1, at a position in the Y-axis direction intermediate between the front and rear positions of the peeling system.

[0015] Figure 3 FIG. 7 is a longitudinal sectional view of the wafer stack with frame of FIG. 1. Figure 3 FIG. 8 is a plan view of the wafer stack with frame of FIG. 1.

[0016] Figure 4 FIG. 9 is a longitudinal sectional view schematically showing the pre-processing device of the peeling system of FIG. 1.

[0017] Figure 5 FIG. 10 is a longitudinal sectional view schematically showing the peeling device of the peeling system of FIG. 1.

[0018] Figure 6 FIG. 11 is a perspective view showing the first conveyance device of the peeling system of FIG. 1.

[0019] Figure 7 FIG. 12 is a perspective view showing the conveyance device of the peeling system of FIG. 1.

[0020] Figure 8 FIG. 13 is a perspective view showing the end effector that supports the upper wafer of FIG. 1. Figure 8 FIG. 14 is a side view schematically showing the end effector that supports the upper wafer of FIG. 1.

[0021] Figure 9 FIG. 15 is a perspective view showing the end effector that supports the wafer stack with frame of FIG. 1. Figure 9 FIG. 16 is a side view schematically showing the end effector that supports the wafer stack with frame of FIG. 1.

[0022] Figure 10 FIG. 17 is a perspective view showing the end effector and the substrate end effector of FIG. 1. Figure 10 FIG. 18 is a side view schematically showing the state in which the end effector and the substrate end effector of FIG. 1 are applied.

[0023] Figure 11 FIG. 19 is a flowchart of the peeling method including the conveyance method.

[0024] Figure 12 FIG. 20 is a plan view showing the peeling system of the first modification.

[0025] Figure 13 FIG. 21 is a plan view showing the peeling system of the second modification.

[0026] Figure 14 FIG. 22 is a plan view showing the peeling system of the third modification.

[0027] Figure 15 FIG. 23 is a plan view showing the bonding system as another semiconductor manufacturing system.

[0028] Figure 16 is a plan view showing a transfer system as another semiconductor manufacturing system.

[0029] Reference Signs

[0030] 30, conveying device; 31, moving mechanism; 32, conveying arm; 33, end effector; 34, 1st support portion; 35, 2nd support portion; 36, plate; F, cutting frame; W, substrate; W1, upper wafer. DETAILED DESCRIPTION

[0031] Hereinafter, a mode for carrying out the present application will be described with reference to the drawings. In each drawing, there are cases where the same reference signs are attached to the same constituent parts, and repeated description is omitted. Further, the X-axis direction, the Y-axis direction, and the Z-axis direction used in the following description are mutually perpendicular axial directions, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0032] Structure of the peeling system 100

[0033] As shown in Figure 1 and Figure 2 , the peeling system 100 of the embodiment of the present application is one example of a semiconductor manufacturing system that conveys a substrate within a system and performs one or more processes on the substrate. In detail, the peeling system 100 performs a peeling process of peeling a stacked substrate T, which is formed by joining a 1st substrate W1 and a 2nd substrate W2, into the 1st substrate W1 and the 2nd substrate W2.

[0034] As shown in Figure 3 (A) and Figure 3 (B), the 1st substrate W1 and the 2nd substrate W2 that constitute the stacked substrate T are formed in a substantially same-diameter circular plate shape. Hereinafter, there are cases where the 1st substrate W1 is referred to as "upper wafer W1", the 2nd substrate W2 is referred to as "lower wafer W2", and the stacked substrate T is referred to as "stacked wafer T". In addition, hereinafter, the side of the plate surface of the upper wafer W1 that is joined to the lower wafer W2 is referred to as "joining surface W1j", and the side of the plate surface opposite to the joining surface W1j is referred to as "non-joining surface W1n". In addition, the side of the plate surface of the lower wafer W2 that is joined to the upper wafer W1 is referred to as "joining surface W2j", and the side of the plate surface opposite to the joining surface W2j is referred to as "non-joining surface W2n". Further, the stacked wafer T, the upper wafer W1, and the lower wafer W2 can also be shapes other than a circular shape (polygonal shape, etc.) when viewed from above.

[0035] At least one of the upper wafer W1 and the lower wafer W2 is a substrate on which electronic circuits, semiconductor devices, etc., are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The compound semiconductor wafer is, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer. One of the upper wafer W1 and the lower wafer W2 may also be a bare wafer without electronic circuits or semiconductor devices formed on it.

[0036] Figure 3 The overlapping wafer T in (A) represents an example where a support substrate is used as the upper wafer W1 and a silicon wafer on which electronic circuits and semiconductor devices are formed is used as the lower wafer W2. In this case, the thickness of the support substrate (upper wafer W1) is made thicker than the thickness of the lower wafer W2. The material of the support substrate (upper wafer W1) is not particularly limited; it can be formed from silicon or from materials such as quartz glass.

[0037] The bonding surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2 are bonded by adhesive G. The type of adhesive G is not particularly limited; an appropriate resin material can be selected based on the materials of the upper wafer W1 and the lower wafer W2. Alternatively, the upper wafer W1 and the lower wafer W2 can also be chemically bonded. For example, the surfaces (bonding surfaces W1j and W2j) of the upper wafer W1 and the lower wafer W2 can be modified by plasma treatment, and further hydrophilicated by pure water, thereby enabling bonding using van der Waals forces and hydrogen bonds (intermolecular forces).

[0038] In addition, such as Figure 3 As shown in (B), the overlapping wafer T has a localized notch N in the circumferential direction of its outer edge. For example, the notch N is formed by locally removing the outer edges of the upper wafer W1 and the lower wafer W2, respectively. The upper wafer W1 and the lower wafer W2 are joined together in a manner that aligns with each other's notches N.

[0039] like Figure 3 (A) and Figure 3 As shown in (B), in this embodiment, the superimposed wafer T is held in a holding fixture HJ having a dicing frame F and a dicing strip P disposed around the superimposed wafer T. The dicing frame F of the holding fixture HJ is an annular frame with an opening F1 on its inner side having a diameter larger than the diameter of the superimposed wafer T. In plan view, the dicing frame F of this embodiment is formed into a generally polygonal shape with arcs in multiple circumferential portions. Furthermore, the shape of the dicing frame F is not limited to this; it may also be an annular shape, etc. The thickness of the dicing frame F is set to be thicker than the thickness of the superimposed wafer T.

[0040] The dicing strip P of the holding fixture HJ is formed of a flexible resin material that can be elastically deformed, and an adhesive layer is formed on one side (upper surface). By bonding the outer periphery of the dicing strip P to the back side of the dicing frame F, the opening F1 of the dicing frame F is sealed by the dicing strip P. Furthermore, the back side of the superimposed wafer T is fixed to one side of the dicing strip P within the opening F1 of the dicing frame F. Specifically, the non-bonded surface W2n of the lower wafer W2 is bonded to the adhesive layer on the upper surface of the dicing strip P. The dicing strip P is configured to allow the superimposed wafer T and the dicing frame F to be relatively displaced in the thickness direction, and the side peripheral surfaces of the superimposed wafer T can be exposed during peeling processes, etc. Hereinafter, the configuration in which the superimposed wafer T is held using the holding fixture HJ is also referred to as a framed superimposed wafer FT (framed superimposed substrate).

[0041] return Figure 1 The stripping system 100 includes an input / output station 1 and a processing station 2. The input / output station 1 and the processing station 2 are configured as separable units and are arranged in the order of input / output station 1 and processing station 2 facing the positive X-axis.

[0042] Input / output station 1 performs input of the framed overlapping wafer FT, output of the stripped upper wafer W1 and the stripped lower wafer W2, etc. Furthermore, the stripped lower wafer W2 is held in a state where a holding fixture HJ is attached. Hereinafter, the configuration of the holding fixture HJ and the lower wafer W2 being attached (integrated) is also referred to as a framed wafer FW (framed substrate).

[0043] The input / output station 1 includes: a mounting section 11 for mounting a cassette; and a first conveying device 12 for conveying an overlapping wafer FT with a conveyor belt, an upper wafer W1 after stripping, and a wafer FW (lower wafer W2) with a conveyor belt after stripping.

[0044] The mounting section 11 has multiple (in) containers for accommodating FOUP (Front-Opening Unified Pod) and other containers. Figure 1 There are four port sections. The system is in a standby state where a framed overlay wafer FT, an upper wafer W1, and a framed wafer FW are respectively housed in multiple boxes placed in each port section. In other words, the port sections constitute the standby positions for the framed overlay wafer FT, the upper wafer W1, and the framed wafer FW. Examples of the multiple boxes include a box Ct (first container) housing the framed overlay wafer FT, a box Cf (second container) housing the stripped framed wafer FW, and boxes C1 and C2 (third containers) housing the stripped upper wafer W1.

[0045] The first conveying device 12 is disposed adjacent to the mounting portion 11 on the positive X-axis side of the mounting portion 11. The first conveying device 12 includes a moving mechanism 121 and multiple (in) mounted on the moving mechanism 121. Figure 1 There are two conveying arms 122. A moving mechanism 121 performs horizontal movement, vertical lifting and lowering, and rotation around the vertical axis of each conveying arm 122. The moving mechanism 121 can move parallel to the direction in which the boxes Ct, Cf, C1, and C2 are arranged. Each of the two conveying arms 122 has multiple arms, and the horizontal position (XY plane position) of the end effector 123 of the arm at its end is adjusted by rotating, bending, extending, and retracting each arm.

[0046] On the other hand, the processing station 2 includes a buffer unit 21, a second conveying device 22, a pre-processing device 23, a stripping device 24, a lower wafer cleaning device 25 (a substrate cleaning device with a frame), and an upper wafer cleaning device 26 (a substrate cleaning device). The buffer unit 21 and the second conveying device 22 are arranged in the Y-axis direction of the stripping system 100 in such a way that they are sandwiched between the pre-processing device 23 and the stripping device 24 and the lower wafer cleaning device 25 and the upper wafer cleaning device 26.

[0047] Specifically, the buffer section 21 is located at the midpoint of the Y-axis direction of the processing station 2, on the negative X-axis side. The second conveying device 22 is located adjacent to the buffer section 21 on the positive X-axis side of the buffer section 21. The pre-processing device 23 and the stripping device 24 are arranged on the negative Y-axis side of the processing station 2 in the X-axis direction. For example, the pre-processing device 23 is located on the positive X-axis side, and the stripping device 24 is located on the negative X-axis side. The lower wafer cleaning device 25 and the upper wafer cleaning device 26 are arranged on the positive Y-axis side of the processing station 2 in the X-axis direction. For example, the lower wafer cleaning device 25 is located on the negative X-axis side, and the upper wafer cleaning device 26 is located on the positive X-axis side.

[0048] The buffer section 21 is formed with a structure comprising the overlapping wafer FT with a frame before being transferred and stripped between the first transport device 12 and the second transport device 22, the upper wafer W1 after stripping, and the wafer FW (lower wafer W2) with a frame after stripping. Figure 2 As shown, the buffer section 21 includes, for example, a first wafer junction section 21a, a second wafer junction section 21b, a junction section 21c with a flipping mechanism, and a positioner 21d. The first wafer junction section 21a, the second wafer junction section 21b, the junction section 21c with the flipping mechanism, and the positioner 21d are stacked in the following order, facing downward in the vertical direction (negative Z-axis direction): first wafer junction section 21a, second wafer junction section 21b, junction section 21c with the flipping mechanism, and positioner 21d. However, the stacking order of the various parts of the buffer section 21 is not limited to this and can be designed arbitrarily.

[0049] The frame-supported stacked wafer FT input from the input / output station 1 can be placed on the 1st wafer transfer section 21a. The frame-supported stacked wafer FT placed on the 1st wafer transfer section 21a is taken out by the 2nd conveyance device 22 and conveyed into the processing station 2 (the pre-processing device 23, etc.).

[0050] The frame-supported wafer FW after the peeling and cleaning is placed on the 2nd wafer transfer section 21b. The frame-supported wafer FW placed on the 2nd wafer transfer section 21b is taken out by the 1st conveyance device 12 and conveyed into the cassette Cf of the placement section 11 of the input / output station 1.

[0051] The peeled upper wafer Wl is placed on the transfer section 21c of the turn-over mechanism. The turn-over mechanism is provided on the transfer section 21c of the turn-over mechanism to turn over the upper surface and the lower surface of the peeled upper wafer Wl. The orientation of the upper surface and the lower surface of the peeled upper wafer Wl placed on the transfer section 21c of the turn-over mechanism is turned over by the turn-over mechanism. Thereafter, the upper wafer Wl is taken out by the 2nd conveyance device 22 and conveyed into the upper wafer cleaning device 26 in the processing station 2.

[0052] The positioner 21d performs the alignment processing of some or all of the frame-supported stacked wafer FT, the peeled upper wafer Wl, and the peeled frame-supported wafer FW. For example, in the case of performing the alignment processing on the frame-supported stacked wafer FT, the positioner 21d rotates the frame-supported stacked wafer FT by holding it on a placement table, detects the positions of the outer edge of the stacked wafer T and the notch N, and thereby calculates the eccentricity of the stacked wafer T. The peeling system 100 adjusts the posture of the stacked wafer T in the horizontal direction by causing the positioner 21d and the 1st conveyance device 12 or the 2nd conveyance device 22 to act based on the eccentricity. The same applies to the case of performing the alignment processing on the upper wafer Wl, the frame-supported wafer FW (lower wafer W2).

[0053] Return Figure 1 The 2nd conveyance device 22 conveys the frame-supported stacked wafer FT, the peeled upper wafer Wl, and the peeled frame-supported wafer FW between the buffer section 21, the pre-processing device 23, the peeling device 24, the lower wafer cleaning device 25, and the upper wafer cleaning device 26. The 2nd conveyance device 22 is provided with a movement mechanism 221 and a plurality of (two in the present embodiment) conveyance arms 222. The movement mechanism 221 performs the movement in the horizontal direction, the elevation in the vertical direction, and the rotation around the vertical axis of each conveyance arm 222, etc. The two conveyance arms 222 each have a plurality of arms, and the horizontal positions (positions in the X-Y plane) of the end effectors 223, 224 provided at the tips of the arms are adjusted by causing each arm to rotate, bend, stretch, etc. Figure 1

[0054] Regarding the Pre-Processing Device 23​

[0055] In addition, the pre-processing device 23 of the processing station 2 is a processing section that performs pre-processing for reducing the joining force between the upper wafer Wl and the lower wafer W2 of the stacked wafer T. Hereinafter, the pre-processing device 23 will be described while referring to the drawings. Figure 4 The pre-processing device 23 will be described while referring to the drawings.

[0056] The pre-processing device 23 is provided with a laser irradiation device that reduces the joining force between the upper wafer Wl and the lower wafer W2 by irradiating the stacked wafer T of the frame-equipped stacked wafer FT with infrared laser light. For example, the pre-processing device 23 is provided with a processing container 231 that houses the frame-equipped stacked wafer FT, an irradiation section 232 that irradiates the processing container 231 with laser light, and a holding section 233 that holds the frame-equipped stacked wafer FT in the processing container 231.

[0057] The processing container 231 is formed in a cylindrical shape with a lower side cylindrical section 231a and an upper side conical section 231b continuous one above the other, and has a processing space inside that performs pre-processing on the stacked wafer T. The processing container 231 has an opening (not shown) through which the frame-equipped stacked wafer FT can be input and output, and is provided with a gate valve (not shown) that can open and close the opening. The processing space of the processing container 231 is hermetically sealed with the gate valve closed.

[0058] The holding section 233 is provided inside the lower side cylindrical section 231a and holds the frame-equipped stacked wafer FT by adsorption. The holding section 233 is provided with a lower chuck 233a that is in a disc shape, a support 233b that supports the lower chuck 233a, a rotation and elevation mechanism 233c that rotates and elevates the lower chuck 233a, and a frame holding section 233d that holds the cutting frame F.

[0059] The lower chuck 233a fixes the stacked wafer T by adsorbing the cutting tape P of the holding jig HJ that holds the stacked wafer T. The lower chuck 233a has an adsorption body 233al and a recessed body 233a2 that houses the adsorption body 233al. In addition, the lower chuck 233a is provided inside with a plurality of elevation pins (not shown), and the stacked wafer T is placed on the lower chuck 233a by elevating each elevation pin.

[0060] The adsorption body 233al is formed in a disc shape with an appropriate thickness, and has a circular adsorption surface on the upper surface that holds the stacked wafer T by the cutting tape P. The adsorption body 233al is a porous member formed of a resin material such as PCTFE (polytrifluorochloroethylene). In other words, the lower chuck 233a is a porous chuck that imparts adsorption pressure using porosity. The adsorption surface of the adsorption body 233al is flat without grooves, holes, or the like.

[0061] The housing body 233a2 is formed in a recessed shape having a bottom wall and a side wall, and the adsorption body 233al is housed inside. The bottom wall of the housing body 233a2 is connected to a suction path connected to a suction device 233a3 provided outside the processing container 231. The suction device 233a3 imparts an adsorption pressure to the adsorption body 233al via the suction path and the housing body 233a2.

[0062] In addition, the rotary lifting mechanism 233c is connected to the control device 9, and the lower chuck 233a is made rotatable and displaceable in the vertical direction based on control by the control device 9. For example, the rotary lifting mechanism 233c has, inside, a drive source that rotates the support column 233b, a drive source that lifts the support column 233b, and a transmission mechanism that transmits the driving force of each drive source (none shown).

[0063] The frame holding portion 233d has a plurality of adsorption pads and support members that support each adsorption pad, and adsorbs and holds the dicing frame F (dicing tape P). Each adsorption pad of the frame holding portion 233d is connected to a suction device 233dl via a suction path. The suction device 233dl imparts an adsorption pressure to each adsorption pad based on control by the control device 9. In addition, the support members of the frame holding portion 233d are linked to the non-illustrated rotary shaft of the rotary lifting mechanism 233c. Thus, the holding portion 233 can displace (rotate, lift) the coincident wafer T held by the lower chuck 233a and the dicing frame F held by the frame holding portion 233d integrally using the rotary lifting mechanism 233c.

[0064] On the other hand, the upper conical portion 231b of the processing container 231 is formed with an optical path of the infrared laser light irradiated by the irradiation portion 232. The inner peripheral surface of the upper conical portion 231b can be subjected to processing that prevents diffuse reflection of the infrared laser light, and the like.

[0065] The irradiation portion 232 is a laser light source that irradiates the coincident wafer T of the wafer-on-frame T held by the holding portion 233 with infrared laser light. As this irradiation portion 232, a carbonic acid gas laser that obtains a continuous wave in the infrared region with carbonic acid gas (CO2: carbonic acid gas) as a medium can be used. The irradiation portion 232 sets the irradiation range, for example, in such a manner that the infrared laser light is irradiated to the entire surface of the coincident wafer T. The infrared laser light irradiated from the irradiation portion 232 is transmitted through the upper wafer Wl and is absorbed at the adhesive G, and gas is generated in the adhesive G. Thus, the infrared laser light can cause the adhesive G to generate voids and weaken the adhesion of the adhesive G. Furthermore, the pre-processing device 23 can also rotate the coincident wafer T using the holding portion 233 when the infrared laser light is irradiated.

[0066] The wavelength of the infrared laser light is preferably set to an optimum wavelength according to the kind of the adhesive G applied to the bonded wafer T. For example, in an embodiment, the wavelength of the infrared laser light is set to 9.3 μm.

[0067] Further, the adhesive G of the bonded wafer T is high in bonding force near the outer periphery of the bonded wafer T. Therefore, the irradiation section 232 is not limited to a structure for irradiating the infrared laser light to the entire surface of the bonded wafer T, but can be configured to irradiate the infrared laser light to the outer periphery of the bonded wafer T. For example, as indicated by a broken line in Figure 4 Thus, the pre-treatment device 23 can also be configured as follows: an irradiation section 232a is provided at a position opposite the outer periphery, and the bonded wafer T is rotated by the holding section 233 while the infrared laser light is irradiated from the irradiation section 232a. Thereby, the bonding force of the adhesive G can be reduced over the entire outer periphery of the bonded wafer T.

[0068] <Concerning the peeling device 24>

[0069] In addition, the peeling device 24 of the processing station 2 is a processing section that performs a peeling process of actually peeling the substrates (upper wafer Wl, lower wafer W2) of the bonded wafer T that has been subjected to the pre-treatment in the pre-treatment device 23 from each other. Next, the peeling device 24 will be described while referring to Figure 5 The peeling device 24 will be described while referring to

[0070] The peeling device 24 has a processing container 241 into which the bonded wafer T is input, and an adsorption peeling section 242 and a lower holding section 243 are provided inside the processing container 241.

[0071] The adsorption peeling section 242 performs a peeling operation of adsorbing the non-bonding surface Wln of the upper wafer Wl of the bonded wafer T and holding the upper wafer Wl, and further pulling the upper wafer Wl upward in the vertical direction. The adsorption peeling section 242 includes a base member 242a, two lifting mechanisms 242b provided to the base member 242a, a support member 242c supported to the two lifting mechanisms 242b, and a plurality of adsorption members 242d supported to the support member 242c and adsorbing the upper wafer Wl. Further, the adsorption peeling section 242 is provided with a handover holding section 242f that operates to hand over the peeled upper wafer Wl to the second conveyance device 22, and a pressing section 242g that presses the cutting frame F of the holding jig HJ.

[0072] The base member 242a is directly or indirectly fixed to the top wall (or side wall) of the processing container 241, for example. The base member 242a has sufficient rigidity and maintains a posture extending in the horizontal direction (X-Y axis direction) inside the processing container 241.

[0073] A pair of two lift mechanisms 242b are arranged in the Y-axis direction of the base member 242a and are fixed in a manner such that they are at the same height position with respect to each other. The pair of lift mechanisms 242b support both end portions in the Y-axis direction of a support member 242c that is disposed on the lower side in the vertical direction of the base member 242a. Each lift mechanism 242b has a main body portion, a shaft, a load sensor, and the like (none of which are shown), and is connected to the control device 9. Each lift mechanism 242b independently raises and lowers the shaft by using a drive source and a transmission mechanism provided in the main body portion, and thereby displaces the support member 242c that is connected to the lower end of the shaft. The load sensor detects the load applied to the shaft and transmits the detection result to the control device 9.

[0074] The support member 242c is a thin plate-like member that supports each of the adsorption members 242d that adsorb the upper wafer Wl. The support member 242c is formed of a metal material or the like, has rigidity that can support each of the adsorption members 242d and flexibility that can be elastically deformed in the vertical direction. The support member 242c extends in substantially parallel to the lower side holding portion 243 by being suspended in a manner such that the pair of lift mechanisms 242b are bridged. The support member 242c is elastically deformed in a manner such that it is bent with respect to the Y-axis direction by being independently raised and lowered by the pair of lift mechanisms 242b, and thereby displaces each of the adsorption members 242d that are supported. In addition, the support member 242c is provided with a through hole that penetrates in the thickness direction at the central portion. The through hole allows the relay holding portion 242f to pass therethrough.

[0075] Each of the adsorption members 242d has a cylindrical portion that extends in the vertical direction and a contact portion that is provided at the lower end of the cylindrical portion, and is connected to a suction device 242d1 such as a vacuum pump via a suction path. The cylindrical portion is firmly connected to the support member 242c and protrudes from the lower surface of the support member 242c. The contact portion is in contact with the non-bonding surface Wln of the upper wafer Wl. The suction device 242d1 is connected to the control device 9 and performs a suction operation based on the control of the control device 9. Each of the adsorption members 242d adsorbs the upper wafer Wl by imparting an adsorption pressure to the contact portion from the suction device 242d1 in a state in which the contact portion is in contact with the non-bonding surface Wln of the upper wafer Wl. Each of the adsorption members 242d is, for example, dispersedly provided on the Y-axis negative direction side of the support member 242c, the peripheral portion of the through hole, the Y-axis positive direction side, and the like.

[0076] In addition, the adsorption and peeling portion 242 has a plurality of distance sensors 242e fixed thereto in the base member 242a. The control device 9 can calculate the height (position in the vertical direction) of the upper wafer Wl by measuring the distance to the opposing relay wafer T (upper wafer Wl) in each of the distance sensors 242e. The control device 9, for example, recognizes the progress of peeling by calculating the height of the upper wafer Wl in the peeling process.

[0077] The handover holding portion 242f of the adsorption and peeling portion 242 is provided to the base member 242a and holds the upper wafer W1 by adsorbing the non-bonding surface W1n of the peeled upper wafer W1 held by each adsorption member 242d. The handover holding portion 242f includes a base, a plurality of adsorption pads, a plurality of contact pads, and a base lifting mechanism, and the like.

[0078] The base of the handover holding portion 242f extends in the vertical direction, supports each adsorption pad and each contact pad at a lower end surface thereof, and is lifted in the vertical direction by the base lifting mechanism. The base passes through the through hole of the support member 242c when descending. Each adsorption pad is made of a rubber material or the like and is connected to a suction device 242f1 such as a vacuum pump via a suction path. The suction device 242f1 is connected to the control device 9 and performs a suction operation based on the control of the control device 9. The handover holding portion 242f adsorbs the non-bonding surface W1n of the upper wafer W1 by causing a plurality of adsorption pads to generate an adsorption pressure (negative pressure). Each contact pad is formed in a semispherical shape or the like from a resin material and the protruding amount from the base can be adjusted by an adjustment portion not shown. Each contact pad is in contact with the non-bonding surface W1n of the upper wafer W1 adsorbed by each adsorption pad and assists in the detachment of the upper wafer W1.

[0079] The base lifting mechanism of the handover holding portion 242f lifts the base based on the control of the control device 9. For example, the base lifting mechanism displaces each adsorption pad and each contact pad between a switching position at which each adsorption member 242d held the peeled upper wafer W1 and a handover position at which the upper wafer W1 is handed over to the second conveyance device 22.

[0080] On the other hand, the pressing portion 242g of the adsorption and peeling portion 242 is provided to the outer peripheral portion (a position farther radially outward than the pair of lifting mechanisms 242b) of the base member 242a and presses down the cutting frame F to the lower side in the vertical direction at an appropriate timing. The pressing portion 242g is provided, for example, with four in the circumferential direction at a position corresponding to the cutting frame F conveyed by the lower holding portion 243. The number of the pressing portion 242g is not particularly limited, of course.

[0081] Each pressing portion 242g includes a pressing pad, a shaft member, and a moving mechanism. The shaft member is provided with the pressing pad at a lower end portion and is lifted in the vertical direction by the moving mechanism. The moving mechanism is connected to the control device 9 and lifts the shaft member based on the control of the control device 9 and presses down the cutting frame F by the pressing pad when descending.

[0082] Further, the lower side holding portion 243 of the peeling apparatus 24 is provided to the lower side from the vertical direction middle of the processing vessel 241, and holds the wafer stack FT by adsorption with the frame. The lower side holding portion 243 is configured substantially the same as the holding portion 233 of the pre-processing apparatus 23. The lower side holding portion 243 has a lower chuck 243a of a disc shape, a support 243b that supports the lower chuck 243a, a rotary lift mechanism 243c that rotates and lifts the lower chuck 243a, and a frame holding portion 243d that holds the dicing frame F.

[0083] The lower chuck 243a fixes the wafer stack T by adsorbing the dicing tape P on which the holding jig HJ holding the wafer stack T is held. The lower chuck 243a has an adsorption body 243al and a recessed body 243a2 that houses the adsorption body 243al. Further, the lower chuck 243a is provided with a plurality of lift pins (not shown) inside, and the wafer stack T is placed on the lower chuck 243a by lifting each of the lift pins.

[0084] The adsorption body 243al is formed in a disc shape having an appropriate thickness, and has a circular adsorption surface on the upper surface that holds the wafer stack T by the dicing tape P. The adsorption body 243al is a porous member formed of a resin material such as PCTFE. The adsorption surface of the adsorption body 243al is flat without grooves, holes, or the like.

[0085] The recessed body 243a2 is formed in a recessed shape having a bottom wall and a side wall, and houses the adsorption body 243al inside. The bottom wall of the recessed body 243a2 is connected to a suction path connected to a suction device 243a3 provided outside the processing vessel 241. The suction device 243a3 imparts an adsorption pressure to the adsorption body 243al via the suction path and the recessed body 243a2.

[0086] Further, the rotary lift mechanism 243c is connected to the control device 9, and is rotatable and vertically displaceable based on the control of the control device 9. For example, the rotary lift mechanism 243c has a drive source that rotates the support 243b, a drive source that lifts the support 243b, and a transmission mechanism that transmits the driving force of each drive source (all not shown) inside.

[0087] The frame holding section 243d has a plurality of adsorption pads and support members that support the adsorption pads, and adsorbs and holds the dicing frame F. The adsorption pads of the frame holding section 243d are connected to a suction device 243d1 such as a vacuum pump via a suction path. The suction device 243d1 imparts an adsorption pressure to the adsorption pads based on control by the control device 9. In addition, the support members of the frame holding section 243d are linked to a non-illustrated rotating shaft of the rotary lifting mechanism 243c. Thus, the lower holding section 243 can move (rotate, lift) the stacked wafers T held by the lower chuck 243a and the dicing frame F held by the frame holding section 243d integrally using the rotary lifting mechanism 243c.

[0088] Moreover, as indicated by a dashed line in FIG. 2, the peeling device 24 can also have a peeling guide section 244 that forms a cut in the adhesive G of the stacked wafers T. For example, the peeling guide section 244 has a blade 244a, a blade sliding mechanism, and a blade lifting mechanism. Figure 5

[0089] The blade 244a has a sharp point that faces the positive direction of the Y axis at an acute angle. The blade sliding mechanism supports the blade 244a so that the blade 244a protrudes toward the positive direction of the Y axis, and reciprocates in the Y axis direction based on driving of a non-illustrated drive source. The blade lifting mechanism is fixed to the base member 242a, for example, and adjusts the height position of the blade 244a by moving the blade sliding mechanism in the Z axis direction based on driving of a non-illustrated drive source.

[0090] The peeling guide section 244 advances the blade 244a toward the positive direction of the Y axis using the blade sliding mechanism after adjusting the height position of the blade 244a using the blade lifting mechanism. With this advance, the sharp point of the blade 244a enters the adhesive G between the upper wafer Wl and the lower wafer W2 from the side of the stacked wafers T, thereby forming a cut between the upper wafer Wl and the lower wafer W2. The cut breaks the adhesive G that joins the vicinity of the outer periphery of the stacked wafers T.

[0091] ​The peeling apparatus 24 above uses the upper wafer Wl of the overlapped wafer T by the adsorption peeling section 242 in the peeling process, and on the other hand, uses the lower wafer W2 (dicing tape P) of the overlapped wafer T by the lower holding section 243. Also, the peeling apparatus 24 raises the lift mechanism 242b on the Y-axis negative direction side, and in conjunction therewith, raises each adsorption member 242d on the Y-axis negative direction side. As a result, the upper wafer Wl is displaced in a manner lifted with respect to the lower wafer W2, and peeling between the upper wafer Wl and the lower wafer W2 is performed from the Y-axis negative direction side to the Y-axis positive direction side. In addition, the peeling apparatus 24 lowers the handover holding section 242f to hold the peeled upper wafer Wl by the adsorption pad. On the other hand, the lower holding section 243 of the peeling apparatus 24 becomes a state of holding the wafer FW of the dicing tape P to which the lower wafer W2 is adhered by the tape frame of the holding jig HJ due to peeling of the upper wafer Wl.

[0092] <Concerning the lower wafer cleaning apparatus 25>

[0093] Returning Figure 1 The lower wafer cleaning apparatus 25 of the processing station 2 is a processing section (tape frame substrate cleaning apparatus) that inputs the wafer FW of the peeled tape frame by the second conveyance apparatus 22, and performs a cleaning process of the bonding surface W2j that is the peeling surface of the lower wafer W2. The lower wafer cleaning apparatus 25 can take an appropriate structure according to the method of the cleaning process, the kind of the adhesive G, and the like. For example, the lower wafer cleaning apparatus 25 includes a processing container that accommodates the wafer FW of the tape frame, a placement stage that supports the wafer FW of the tape frame to be rotatable within the processing container, and a nozzle that sprays a liquid for cleaning to the peeling surface (adhesive G) within the processing container. Thereby, the lower wafer cleaning apparatus 25 can well remove the adhesive G of the peeling surface of the lower wafer W2.

[0094] <Concerning the upper wafer cleaning apparatus 26>

[0095] In addition, the upper wafer cleaning apparatus 26 of the processing station 2 is a processing section (substrate cleaning apparatus) that inputs the peeled upper wafer Wl by the second conveyance apparatus 22, and performs a cleaning process of the bonding surface Wlj that is the peeling surface of the upper wafer Wl. Further, the upper wafer Wl that has been flipped over the upper surface and the lower surface via the handover section 21c of the tape flipping mechanism is input to the upper wafer cleaning apparatus 26. The upper wafer cleaning apparatus 26 can be configured substantially the same as the lower wafer cleaning apparatus 25. Thereby, the upper wafer cleaning apparatus 26 can also well remove the adhesive G of the peeling surface of the upper wafer Wl.

[0096] <Concerning the control apparatus 9>

[0097] The peeling system 100 has a control device 9 that controls various actions of the input / output station 1 and the processing station 2. The control device 9 is a computer that has a processor 91, a memory 92, and an input / output interface not shown. The processor 91 is made of one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit made of a plurality of discrete semiconductors, and the like. The memory 92 includes a non-volatile memory and a volatile memory. A program that controls various processes is stored in the memory 92, and the processor 91 controls the actions of the peeling system 100 by reading out and executing the program stored in the memory 92. In other words, in the present application, the control device 9 refers to an electronic circuit having a CPU, a GPU, an ASIC, an FPGA, and the like, and various control actions described in the present application are performed by executing command codes stored in the memory 92 or by designing a circuit for a specific purpose.

[0098] <Concerning the conveyance device of the peeling system 100>

[0099] The peeling system 100 configured as described above conveys the superimposed wafer FT with the frame, the wafer FW with the frame, and the upper wafer W1 by the first conveyance device 12 of the input / output station 1 and the second conveyance device 22 of the processing station 2. Among them, the superimposed wafer FT with the frame and the wafer FW with the frame have a large outer diameter because they have the cutting frame F. On the other hand, the upper wafer W1 has a smaller outer diameter than the superimposed wafer FT with the frame and the wafer FW with the frame because it does not have the cutting frame F. That is, the conveyance device conveys two kinds of conveyance objects having different outer diameters.

[0100] Therefore, the first conveyance device 12 of the input / output station 1 has a plurality of (two in the embodiment) different kinds of conveyance arms 122. Next, the structure of the first conveyance device 12 will be described with reference to Figure 6 The structure of the first conveyance device 12 will be described.

[0101] Specifically, the plurality of conveyance arms 122 of the first conveyance device 12 are mounted on the moving mechanism 121. Also, the plurality of conveyance arms 122 include a conveyance arm 122A for conveying the superimposed wafer FT with the frame and the wafer FW with the frame, and a conveyance arm 122B for conveying the upper wafer W1.

[0102] The transport arm 122A has a plurality of arms, and has a first end effector 123A that supports the coincident wafer FT with the frame and the wafer FW with the frame. The first end effector 123A is installed on an arm 122a of the plurality of arms on the distal end side farthest from the moving mechanism 121. The arm 122a on the distal end side has a retracting mechanism (not shown) inside that allows the first end effector 123A to advance and retract in the direction of the central axis (length direction) of the first end effector 123A.

[0103] The first end effector 123A has a base 124 fixed to the arm 122a on the distal end side and a pair of prongs 125 projecting from the base 124 toward the top end direction (distal end direction). Thus, the first end effector 123A forms a U shape in plan view, and has an opening open to the top end direction. The base 124 and the pair of prongs 125 are formed of one sheet, and are continuous with each other flush. The base 124 and the prongs 125 of the first end effector 123A are formed to a size corresponding to the diameter of the cutting frame F, and can transport the cutting frame F.

[0104] In addition, the first end effector 123A has a plurality of (four) suction pads 126 on the upper surface thereof. Each of the suction pads 126 is disposed near the opening on the top end side of the base 124 and the top end of each of the prongs 125, and so on, in a manner opposite the circumferential direction of the cutting frame F. Each of the suction pads 126 is in communication with a flow path provided inside the first end effector 123A, and the flow path is connected to a suction device (not shown). The suction device suctions the cutting frame F (cutting tape P) placed on each of the suction pads 126 by imparting a suction pressure to each of the suction pads 126 based on the control of the control device 9.

[0105] On the other hand, the transport arm 122B also has a plurality of arms, and has a second end effector 123B that supports the upper wafer Wl. The second end effector 123B is installed on an arm 122b of the plurality of arms on the distal end side farthest from the moving mechanism 121. The arm 122b on the distal end side has a retracting mechanism (not shown) inside that allows the second end effector 123B to advance and retract in the direction of the central axis (length direction) of the second end effector 123B.

[0106] The second end effector 123B has a base 127 fixed to the arm 122b on the distal end side and a pair of prongs 128 projecting from the base 127 toward the top end direction (distal end direction). Thus, the second end effector 123B also forms a U shape in plan view, and has an opening open to the top end direction. The base 127 and the pair of prongs 128 are formed of one sheet, and are continuous with each other flush. The base 127 and the prongs 128 of the second end effector 123B are set to a size corresponding to the diameter of the upper wafer Wl, and can transport the upper wafer Wl. That is, the second end effector 123B is formed to a size smaller than the size of the first end effector 123A.

[0107] Additionally, the second end effector 123B also has a plurality (3) of adsorption pads 129 on its upper surface. Each adsorption pad 129 is arranged near the opening on the top side of the base 127 and at the top of each fork 128, etc., opposite to the outer periphery of the upper wafer W1. Each adsorption pad 129 communicates with a flow path provided in the second end effector 123B, which is connected to an adsorption device (not shown). The adsorption device adsorbs the upper wafer W1 placed on each adsorption pad 129 by applying adsorption pressure to each adsorption pad 129 under the control of the control device 9.

[0108] On the other hand, such as Figure 1 As shown, the second conveying device 22 of the processing station 2 conveys the material between the buffer section 21, the pre-processing device 23, the stripping device 24, the lower wafer cleaning device 25, and the upper wafer cleaning device 26. Therefore, an improvement in the conveying efficiency of the second conveying device 22 is required. In a structure such as the first conveying device 12, which has two different types of conveying arms 122 (first end effector 123A and second end effector 123B), it may not be possible to sufficiently improve the conveying efficiency. For example, when a second conveying device with two different types of conveying arms is used, it is difficult to perform actions such as inputting the framed wafer FW into the second wafer transfer section 21b and outputting the framed overlapping wafer FT from the first wafer transfer section 21a in a single visit to the buffer section 21.

[0109] Therefore, as Figure 1 and Figure 7 As shown, the stripping system 100 of the embodiment improves transport efficiency by incorporating the transport device 30, which supports both the framed overlapping wafer FT (or framed wafer FW) and the upper wafer W1, into the second transport device 22. Specifically, the transport device 30 includes a moving mechanism 31 (moving mechanism 221 of the second transport device 22) and two transport arms 32 (transport arms 222 of the second transport device 22).

[0110] In addition, each of the two transport arms 32 is equipped with an end effector 33 (end effector 223 of the second transport device 22) that can support the framed overlapping wafer FT (or framed wafer FW) and the upper wafer W1. The end effectors 33 of each transport arm 32 are arranged vertically (up and down) in the standby state. The transport device 30 enables one transport arm 32 and the other transport arm 32 to move independently, thereby positioning each end effector 33 at its respective target position (horizontal position, XY plane position).

[0111] Each of the end effectors 33 has a first support portion 34 that supports the circular upper wafer W1 from below and a second support portion 35 that supports the cutting frame F from below in one plate 36. However, the first support portion 34 and the second support portion 35 are continuous with each other in the one plate 36 and are not explicitly divided. The first support portion 34 is located in a region of the one plate 36 that opposes the circular shape of the upper wafer W1 to be supported, and the second support portion 35 is located in a region of the one plate 36 that opposes the annular shape of the cutting frame F. Thus, the first support portion 34 is disposed inside the second support portion 35.

[0112] The plate 36 extends in the top end direction (end direction) from the arm 32a of the end of the transport arm 32 and expands in the width direction. The plate 36 has a wide base portion 361 on the base end side and, on the other hand, a plurality of (four in this embodiment) forks 37 that protrude from the base portion 361 in the top end direction. The upper surface and the lower surface of each of the forks 37 are continuous with the upper surface and the lower surface of the base portion 361. Figure 4 The four forks 37 include a pair of first support forks 371 that constitute the first support portion 34 on the inner side and a pair of second support forks 372 that constitute the second support portion 35 on the outer side. The pair of first support forks 371 protrude in parallel with each other. The first support portion 34 has a U-shaped opening 341 with the pair of first support forks 371. The pair of second support forks 372 protrude in directions away from each other, and a V-shaped space is formed between each of the adjacent first support forks 371. In addition, the pair of second support forks 372 protrude slightly in the top end direction with respect to the pair of first support forks 371.

[0113] The four forks 37 include a pair of first support forks 371 that constitute the first support portion 34 on the inner side and a pair of second support forks 372 that constitute the second support portion 35 on the outer side. The pair of first support forks 371 protrude in parallel with each other. The first support portion 34 has a U-shaped opening 341 with the pair of first support forks 371. The pair of second support forks 372 protrude in directions away from each other, and a V-shaped space is formed between each of the adjacent first support forks 371. In addition, the pair of second support forks 372 protrude slightly in the top end direction with respect to the pair of first support forks 371.

[0114] The first support portion 34 is set in a range that includes the top end region of the U-shaped opening 341 surrounded by the pair of first support forks 371 and the base portion 361. The first support portion 34 has a first suction pad 342 that can support the upper wafer W1 at the top end of each of the pair of first support forks 371 and the top end region of the base portion 361, respectively. That is, the first support portion 34 has three first suction pads 342 provided on the upper surface of the plate 36. Each of the first suction pads 342 protrudes slightly from the upper surface of the plate 36 and supports the upper wafer W1 at three points at a position away from the plate 36. Each of the first suction pads 342 is disposed, for example, so as to form a vertex of an equilateral triangle shape when viewed from above.

[0115] In addition, each of the first suction pads 342 has a suction hole (not shown) in the central portion. The first support portion 34 has a flow path 343 that communicates with the suction hole of each of the first suction pads 342 and can apply a suction pressure to each of the first suction pads 342. An unshown suction device is connected to the flow path 343, and the suction device applies a suction pressure to each of the first suction pads 342 based on the control of the control device 9. Thus, the first support portion 34 can fix the upper wafer W1 placed on each of the first suction pads 342.

[0116] The second support portion 35 is provided in a range including a region of the base portion 361 and the base end side of the pair of second support prongs 372, and the like, on the base end side of the tip end region. The second support portion 35 has the second adsorption pads 352 that can support the dicing frame F in the region of the base end of the base portion 361 and the tip end of the pair of second support prongs 372. In detail, one of the second adsorption pads 352 is provided at the tip end of each of the pair of second support prongs 372, and two of the second adsorption pads 352 are provided in the region of the base end side of the plate 36. Each of the second adsorption pads 352 protrudes from the upper surface of the plate 36 to a low level, and supports the dicing frame F (the frame-equipped stacked wafer FT, the frame-equipped wafer FW) at four points at a position apart from the plate 36. Each of the second adsorption pads 352 is arranged, for example, so as to form a vertex of a trapezoidal shape in plan view.

[0117] In addition, two of the four second adsorption pads 352 provided in the base portion 361 have adsorption holes (not shown) in the central portions. The second support portion 35 has flow paths 353 that communicate with the adsorption holes of the second adsorption pads 352 and can impart adsorption pressure to the second adsorption pads 352. The flow paths 353 are connected to a suction device (not shown) that imparts adsorption pressure to the second adsorption pads 352 based on control by the control device 9. Thus, the second support portion 35 can fix the dicing frame F placed on the second adsorption pads 352. Furthermore, the flow paths 353 can also communicate with the adsorption holes of the second adsorption pads 352 on the pair of second support prongs 372 side.

[0118] The conveyance device 30 configured as described above can select a mode of supporting the upper wafer W1 and a mode of supporting the frame-equipped stacked wafer FT (or the frame-equipped wafer FW) in one end effector 33. Specifically, in the case of supporting the upper wafer W1 as shown in (A) of FIG. 10, the conveyance device 30 moves one end effector 33 based on control by the control device 9 to arrange the end effector 33 below the upper wafer W1. Thus, the conveyance device 30 can place the upper wafer W1 on the end effector 33 in a manner that covers the pair of first support prongs 371, the opening 341, and the tip end side of the base portion 361 of the first support portion 34. Figure 8

[0119] Furthermore, the first support portion 34 supports the outer peripheral portion of the upper wafer W1 at three points using the three first adsorption pads 342 at the time of placement of the upper wafer W1. Also, the first support portion 34 can fix the upper wafer W1 by imparting adsorption pressure of a suction device to each of the first adsorption pads 342 via the flow paths 343. In this state, the region of the base end side of the base portion 361 and each of the second adsorption pads 352 of the pair of second support prongs 372 are exposed to the outside of the upper wafer W1.

[0120] In addition, as shown in (B) of FIG. 10, the conveyance device 30 can support the frame-equipped stacked wafer FT (or the frame-equipped wafer FW) in one end effector 33. Specifically, the conveyance device 30 moves one end effector 33 based on control by the control device 9 to arrange the end effector 33 below the frame-equipped stacked wafer FT (or the frame-equipped wafer FW). Thus, the conveyance device 30 can place the frame-equipped stacked wafer FT (or the frame-equipped wafer FW) on the end effector 33 in a manner that covers the pair of first support prongs 371, the opening 341, and the tip end side of the base portion 361 of the first support portion 34. Figure 8 ​As shown in (B) of FIG. 6, the end effector 33 sets the height Hl of each first adsorption pad 342 lower than the height H2 of each second adsorption pad 352. Thus, the first support portion 34 can support the upper wafer Wl at a lower position, and stably hold the upper wafer Wl, as compared with the frame-tied-up wafer FT described later.

[0121] In addition, in the case where the frame-tied-up wafer FT is supported as shown in (A) of FIG. 7, the conveyance device 30 configures the end effector 33 below the frame-tied-up wafer FT by moving one end effector 33 based on the control of the control device 9. Thus, the conveyance device 30 can place the frame-tied-up wafer FT on the end effector 33 in a manner of covering the pair of second support forks 372 of the second support portion 35, the top end region of the base portion 361, and the region of the base end side. Further, in the case where the frame-tied-up wafer FW is supported, of course, it can be supported in the same manner as the frame-tied-up wafer FT. Figure 9

[0122] Further, the second support portion 35 supports the cut frame F at four points by the four second adsorption pads 352 at the time of placement of the frame-tied-up wafer FT. Also, the second support portion 35 can fix the frame-tied-up wafer FT by applying the adsorption pressure of the suction device to the two second adsorption pads 352 of the region of the base end side via the flow path 353. In this state, the first support portion 34 (the pair of first support forks 371, the top end region of the base portion 361, and the like) becomes a state of being covered integrally with the second support portion 35.

[0123] In addition, as shown in (B) of FIG. 8, the second support portion 35 of the end effector 33 supports the frame-tied-up wafer FT at a position higher than the upper wafer Wl. Thus, the end effector 33 can stably hold the frame-tied-up wafer FT by suppressing interference of the inner side of the frame-tied-up wafer FT with each first adsorption pad 342. Figure 9

[0124] In addition, as shown in (B) of FIG. 9, the second support portion 35 of the end effector 33 supports the frame-tied-up wafer FT at a position higher than the upper wafer Wl. Thus, the end effector 33 can stably hold the frame-tied-up wafer FT by suppressing interference of the inner side of the frame-tied-up wafer FT with each first adsorption pad 342. Figure 10 Further, as shown in (B) of FIG. 10, the second conveyance device 22 not only has the above-described end effector 33 in each conveyance arm 222, but also has a substrate end effector 43 that can support the upper surface (the surface on the side opposite to the peeling surface: the non-bonding surface Wln) of the upper wafer Wl without the cut frame F. As shown in (B) of FIG. 10, the substrate end effector 43 extends in parallel with the end effector 33 fixed to the lower surface of the end-fixed arm 32a, without contacting the end effector 33. Figure 10

[0125] ​​​The substrate end effector 43 is formed of one plate 46 like the end effector 33. The plate 46 has a base portion 461 and a pair of support prongs 47 protruding from the base portion 461 toward the top end direction (distal end direction). Thus, the substrate end effector 43 is formed in a U-shape in plan view, and has an opening 441 open toward the top end direction. The base portion 461 and the pair of support prongs 47 are continuous with each other flush. The substrate end effector 43 is formed in a size corresponding to the diameter of the upper wafer Wl.

[0126] Further, the substrate end effector 43 has a substrate support portion 44 that holds the upper wafer Wl by suction on the lower surface of the plate 46. The substrate support portion 44 has a plurality of (three) suction pads 442 on the lower surface. Each of the suction pads 442 is disposed near the opening 441 on the top end side of the base portion 461 and the top end of each of the support prongs 47, and the like, in opposition to the outer peripheral portion of the upper wafer Wl. Each of the suction pads 442 communicates with a flow path 443 provided in the substrate end effector 43, which is connected to a suction device not shown. The suction device imparts a suction pressure to each of the suction pads 442 based on the control of the control device 9, and holds the upper wafer Wl by suction with each of the suction pads 442. Thus, the substrate end effector 43 can hold the upper wafer Wl on the lower surface thereof.

[0127] The second conveyance device 22 is provided with the end effector 33 and the substrate end effector 43 on one conveyance arm 32 (the arm 32a on the distal end side), and is provided with the end effector 33 and the substrate end effector 43 on the other conveyance arm 32 (the arm 32a on the distal end side). Thus, the second conveyance device 22 can convey the stacked wafer FT of the tape frame, the wafer FW of the tape frame, and the upper wafer Wl in various modes in the processing station 2 as in the peeling method to be discussed later.

[0128] <About the Peeling Method>

[0129] The peeling system 100 is basically configured as above, and the following describes the operation thereof (the peeling method including the conveyance method) with reference to the flowchart of Figure 11 Figure 1 the flowchart of

[0130] The control device 9 executes the steps S101 to S115 of the peeling method by controlling each structure of the peeling system 100 in the peeling method. Figure 11

[0131] In the peeling method, first, the first conveyance device 12 takes out the stacked wafer FT of the tape frame from the cassette Ct of the input / output station 1 by the first end effector 123A, and conveys the stacked wafer FT of the tape frame to the first wafer transfer portion 21a (step S101). The first end effector 123A holds the cut frame F by suction, and can stably convey the stacked wafer FT of the tape frame (also refer to​​Figure 6 ).

[0132] Next, the second conveyance device 22 outputs the frame-attached stacked wafer FT from the first wafer transfer section 21a using the end effector 33, and conveys the frame-attached stacked wafer FT to the pre-treatment device 23 (step S102). The end effector 33 can stably convey the frame-attached stacked wafer FT by holding the cut frame F by suction using the second support section 35 (see also FIG. 6). Figure 9 ).

[0133] Further, the pre-treatment device 23 performs pre-treatment for reducing the bonding force of the upper wafer Wl and the lower wafer W2 by irradiating the adhesive G of the stacked wafer T of the frame-attached stacked wafer FT inputted thereto with infrared laser light (step S103).

[0134] After the pre-treatment of the stacked wafer T, the second conveyance device 22 outputs the frame-attached stacked wafer FT from the pre-treatment device 23 using the end effector 33, and conveys the frame-attached stacked wafer FT to the peeling device 24 (step S104).

[0135] The peeling device 24 performs peeling treatment for separating the stacked wafer T of the frame-attached stacked wafer FT inputted thereto into the upper wafer Wl and the lower wafer W2 (step S105). By performing the pre-treatment for reducing the bonding force of the stacked wafer T in advance, the upper wafer Wl can be smoothly peeled from the lower wafer W2 in the peeling treatment.

[0136] After the peeling treatment, the second conveyance device 22 outputs the peeled frame-attached wafer FW (lower wafer W2) from the peeling device 24 using the end effector 33, and conveys the frame-attached wafer FW to the lower wafer cleaning device 25 (step S106). The end effector 33 can also stably convey the frame-attached wafer FW by holding the cut frame F by suction using the second support section 35 (see also FIG. 6). Figure 9 ).

[0137] The lower wafer cleaning device 25 removes the adhesive G remaining on the peeled surface of the lower wafer W2 by performing cleaning treatment on the frame-attached wafer FW inputted thereto (step S107).

[0138] After the cleaning treatment, the second conveyance device 22 outputs the frame-attached wafer FW from the lower wafer cleaning device 25 using the end effector 33, and conveys the frame-attached wafer FW to the second wafer transfer section 21b (step S108).

[0139] Further, in the input / output station 1, the first conveyance device 12 outputs the frame-attached wafer FW from the second wafer transfer section 21b using the first end effector 123A, and conveys the frame-attached wafer FW to the cassette Cf of the placement section 11 (step S109).

[0140] In addition, the peeling system 100 performs output and cleaning processing of the upper wafer Wl peeled in the peeling device 24 in parallel with the transport and cleaning processing of the wafer with frame FW. Specifically, the 2nd transport device 22 outputs the upper wafer Wl from the peeling device 24 using the substrate end effector 43 at a different timing from the output of the wafer with frame FW, and transports the upper wafer Wl to the handover section 21c of the tape flipping mechanism (step S110). That is, the substrate end effector 43 enters above the upper wafer Wl peeled in the peeling device 24 and held in the handover holding section 242f, and adsorbs the upper surface of the upper wafer Wl using each adsorption pad 442 of the lower surface. This is because the lower surface of the upper wafer Wl is the peeled surface on which the adhesive G remains. The 2nd transport device 22 can stably transport the upper wafer Wl by holding the upper surface (non-bonding surface Wln) of the upper wafer Wl.

[0141] The handover section 21c of the tape flipping mechanism flips the orientation of the upper surface and the lower surface of the upper wafer Wl input by the 2nd transport device 22 (step S111).

[0142] After that, the 2nd transport device 22 holds the upper wafer Wl whose peeled surface faces upward by flipping using the end effector 33, and transports the upper wafer Wl from the handover section 21c of the tape flipping mechanism to the upper wafer cleaning device 26 (step S112). The end effector 33 can stably transport the upper wafer Wl by adsorbing and holding the upper wafer Wl using the 1st support section 34 (also refer to Figure 9 ).

[0143] The upper wafer cleaning device 26 removes the adhesive G remaining on the peeled surface of the input upper wafer Wl by performing cleaning processing on the upper wafer Wl (step S113).

[0144] After the cleaning processing, the 2nd transport device 22 outputs the upper wafer Wl from the upper wafer cleaning device 26 using the end effector 33, and transports the upper wafer Wl to the handover section 21c of the tape flipping mechanism (step S114). In the handover section 21c of the tape flipping mechanism, flipping of the upper wafer Wl is not performed at the time of the 2nd input of the upper wafer Wl.

[0145] Also, the 1st transport device 12 outputs the upper wafer Wl from the handover section 21c of the tape flipping mechanism using the 2nd end effector 123B, and transports the upper wafer Wl to the cassettes Cl, C2 of the placement section 11 (step S115). The 2nd end effector 123B can stably transport the upper wafer Wl by adsorbing and holding the upper wafer Wl (also refer to Figure 6 ).

[0146] In addition, the peeling system 100 continuously performs the peeling method on the plurality of the frame-tied stacked wafers FT according to the processing state of each device. For example, the peeling system 100 can perform the peeling processing of the next frame-tied stacked wafer FT using the peeling device 24 during the period in which the lower wafer cleaning device 25 performs the cleaning processing of the lower wafer W2 and the upper wafer cleaning device 26 performs the cleaning processing of the upper wafer Wl. In addition, the peeling system 100 can perform the pre-processing of the next frame-tied stacked wafer FT using the pre-processing device 23 during the period in which the peeling device 24 performs the peeling processing. Further, the peeling system 100 can of course perform the transportation of the transported object using the first transportation device 12 and the second transportation device 22 intermittently with the pre-processing, the peeling processing, and the cleaning processing. Thus, the peeling system 100 can efficiently perform the peeling of the plurality of the stacked wafers T.

[0147] In addition, in the transportation method of the transported object, the first transportation device 12 and the second transportation device 22 can independently act the two end effectors 33, hold and transport the frame-tied stacked wafer FT, the frame-tied wafer FW, and the upper wafer Wl at the same time. For example, the first transportation device 12 can transport the upper wafer Wl using the second end effector 123B while transporting the frame-tied stacked wafer FT or the frame-tied wafer FW using the first end effector 123A. Similarly, the second transportation device 22 can transport the frame-tied stacked wafer FT, the frame-tied wafer FW, or the upper wafer Wl using the other end effector 33 while transporting the frame-tied stacked wafer FT, the frame-tied wafer FW, or the upper wafer Wl using one end effector 33. Alternatively, the second transportation device 22 can transport the upper wafer Wl using one substrate end effector 43 while transporting the frame-tied wafer FW using one end effector 33. That is, by applying the two end effectors 33 having the first support portion 34 and the second support portion 35, the second transportation device 22 can adopt various transportation modes, can improve the transportation efficiency of the transported object, and further improve the processing efficiency of the entire peeling method.

[0148] Further, the peeling system 100 and the transportation method of the present application are not limited to the above-described embodiments, and various modifications can be made. For example, the peeling system 100 of the above-described embodiments is configured to have the first end effector 123A and the second end effector 123B with respect to the first transportation device 12. This is not limited thereto, and the peeling system 100 can apply the transportation device 30 having the end effector 33 to the first transportation device 12. Thus, in the input / output station 1, various transportation modes of simultaneously transporting the frame-tied stacked wafer FT, the frame-tied wafer FW, or the upper wafer Wl can be adopted. Further, in this case, the first transportation device 12 can not be provided with the substrate end effector 43. This is because it is not necessary to hold the upper wafer Wl from above.

[0149] Furthermore, the pretreatment apparatus 23 for reducing the bonding force of the overlapping wafers T is not limited to an infrared laser irradiation apparatus; other apparatuses such as ultraviolet irradiation apparatus and heat treatment apparatus may also be used depending on the type of adhesive G. Moreover, the number of conveying arms of the first conveying device 12 or the second conveying device 22 is not limited to two; it may be three or more, or it may be one.

[0150] <Example 1>

[0151] Additionally, for example, the stripping system 100 described above is configured to include a lower wafer cleaning unit 25 and an upper wafer cleaning unit 26. However, the stripping system 100 may also be configured to not include one or both of these cleaning units. As an example, Figure 12 The first modified example of the stripping system 100A shown is configured with two lower wafer cleaning units 25, but lacks an upper wafer cleaning unit 26. In this case, the upper wafer W1 is not cleaned; after being flipped by the transfer section 21c with a flipping mechanism to change the orientation of its upper and lower surfaces, it is fed into boxes C1 and C2. Furthermore, the upper wafer W1 may be cleaned at another location or disposed of as a waste.

[0152] Furthermore, in the first modified stripping system 100A, it is indicated that two of the aforementioned end effectors 33 are provided in the first conveying device 12 (see reference). Figure 7 For example, the stripping system 100A can also improve the degree of freedom in the transport configuration of the framed overlapping wafer FT, the framed wafer FW, and the upper wafer W1 in the input / output station 1, thereby improving transport efficiency.

[0153] <Second Variation>

[0154] In addition, such as Figure 13 As shown in the second variation, the stripping system 100B can also be structured as follows: it includes multiple (two) processing stations 2, each processing station 2 equipped with a conveying device 30. Specifically, the processing station 2 includes a first processing station 2A adjacent to the input / output station 1 and a second processing station 2B adjacent to the first processing station 2A. The input / output station 1, the first processing station 2A, and the second processing station 2B are arranged in the positive X-axis direction in the following order: input / output station 1, first processing station 2A, second processing station 2B.

[0155] The first processing station 2A has a buffer section 21 and a second conveying device 22A located at the middle position in the Y-axis direction. In addition, the first processing station 2A has multiple (two) wafer cleaning devices 26 on both sides in the Y-axis direction, with the buffer section 21 and the second conveying device 22A sandwiched in the middle.

[0156] The transport device 30 (refer to Figure 7 ) having a plurality of the above-described end effectors 33 is applied to the second transport device 22A of the first processing station 2A. In addition, the second transport device 22A is provided with a structure not having the above-described substrate end effector 43. This is because the upper wafer Wl whose upper surface and lower surface orientations are reversed by the handover portion 21c of the tape reversing mechanism of the second processing station 2B described later is transported to the first processing station 2A.

[0157] On the other hand, the second processing station 2B is provided with a buffer portion 21 and a third transport device 22B at a middle position in the Y-axis direction. In addition, the second processing station 2B is provided with a front processing device 23 and a peeling device 24 on the Y-axis negative direction side, and a plurality of (two) lower wafer cleaning devices 25 on the Y-axis positive direction side.

[0158] The transport device 30 (refer to Figure 10 ) having the above-described end effectors 33 and substrate end effector 43 is applied to the third transport device 22B of the second processing station 2B. Thereby, the third transport device 22B can transport the stacked wafer FT of the tape frame, the wafer FW of the tape frame, and the upper wafer Wl from the peeling device 24 in a suspended state using the end effector 33 and the substrate end effector 43.

[0159] Thus, the peeling system 100B can also transport the stacked wafer FT of the tape frame, the wafer FW of the tape frame, and the upper wafer Wl to perform appropriate processing in the case of dividing the processing station 2 into a plurality of and applying the transport device 30 to each processing station 2. Furthermore, the peeling system 100B can process the upper wafer Wl and the wafer FW of the tape frame in a scattered manner in a time-consuming cleaning process by having a plurality of cleaning devices (lower wafer cleaning device 25, upper wafer cleaning device 26).

[0160] <3rd Modification>

[0161] In addition, as in the third modification shown in Figure 14 , the peeling system 100C can also be a structure of a peeling method of a stacked wafer T divided into three systems. For example, the peeling system 100C can be provided with a structure having a first system 101 having a plurality of front processing devices 23, a second system 102 having a plurality of peeling devices 24, and a third system 103 having a plurality of lower wafer cleaning devices 25.

[0162] The first system 101 is composed of an input / output station 1 having a first conveyance device 12 and a processing station 2 having a second conveyance device 22, for example, as with the peeling system 100 of the embodiment. The processing station 2 is provided with a pre-processing device 23 that reduces the bonding force of the bonded wafer T of the bonded wafer FT with a frame on both sides in the Y-axis direction. The second conveyance device 22 conveys the bonded wafer FT with a frame between the buffer portion 21 and each pre-processing device 23.

[0163] The second system 102 is configured so that a conveyance device 30 having an end effector 33 and a substrate end effector 43 is provided to directly convey the bonded wafer FT with a frame to a plurality of peeling devices 24. In addition, the second system 102 has a handover portion 21c with a turnover mechanism, a positioner 21d, and has a function of turning over the upper wafer W1 that has been peeled by each peeling device 24. Thus, the conveyance device 30 can convey the bonded wafer FT with a frame after pre-processing, the wafer FW with a frame after peeling, and the upper wafer W1 between each peeling device 24, the handover portion 21c with a turnover mechanism, the positioner 21d, and each cassette Ct, Cf, C1, C2.

[0164] Further, the third system 103 is configured so that a conveyance device 30 having an end effector 33 is provided to directly convey the wafer FW with a frame after peeling to a plurality of lower wafer cleaning devices 25. Thus, the third system 103 can efficiently perform cleaning processing of the wafer FW with a frame.

[0165] The peeling system 100C described above can improve the versatility and degree of freedom of layout at the time of installation of a factory that has only insufficient systems, etc., by providing each device in a different system, for example, using an existing system.

[0166] <Regarding Other Semiconductor Manufacturing Systems>

[0167] In addition, the conveyance device 30 of the embodiment can be applied not only to the conveyance means in the peeling system 100 but also to various semiconductor manufacturing systems. Hereinafter, with reference to Figure 15 and Figure 16 a specific example of other semiconductor manufacturing systems will be described.

[0168] Figure 15 The semiconductor manufacturing system illustrated is a bonding system 500 that bonds a plurality of die (semiconductor chips) not illustrated to a substrate W to manufacture a substrate with die. The bonding system 500 has an input / output station 501, a first processing station 502, a second processing station 503, and a control device 509. The input / output station 501, the first processing station 502, and the second processing station 503 are arranged in order from the X-axis negative direction side toward the X-axis positive direction side. In addition, the second processing station 503 can also be provided with a plurality of.

[0169] The input / output station 501 is configured substantially similarly to the input / output station 1 of the peeling system 100 described above, and has a placement section 511 and a first conveyance device 512. The placement section 511 places the cassettes Cl to C4. The cassette Cl accommodates the holding jigs HJ (chips with frames) on which a plurality of the bare chips are mounted. Note that the member that holds the bare chips is not limited to the holding jigs HJ, and a carrier such as a substrate can be used, for example. The cassette C2 accommodates the holding jigs HJ from which the bare chips are peeled. The cassette C3 accommodates the substrates W before the bare chips are bonded thereto. The cassette C4 accommodates the substrates W after the bare chips are bonded thereto.

[0170] The first conveyance device 512 uses, for example, the conveyance device 30 having the end effector 33 described above (refer to FIG. 2). The cutting frame F of the holding jig HJ has a larger diameter than the diameter of the substrate W. The end effector 33 of the first conveyance device 512 can support the substrate W using the first support section 34, and can support the cutting frame F using the second support section 35. In addition, the first conveyance device 512 has a plurality of (for example, two) end effectors 33, and thus can convey the chip with frame on which the bare chip is mounted, the holding jig HJ from which the bare chip is removed, the substrate W, and the substrate W to which the bare chip is bonded, in various conveyance modes. Figure 7 ) of the end effector 33 described above (refer to FIG. 2). The cutting frame F of the holding jig HJ has a larger diameter than the diameter of the substrate W. The end effector 33 of the first conveyance device 512 can support the substrate W using the first support section 34, and can support the cutting frame F using the second support section 35. In addition, the first conveyance device 512 has a plurality of (for example, two) end effectors 33, and thus can convey the chip with frame on which the bare chip is mounted, the holding jig HJ from which the bare chip is removed, the substrate W, and the substrate W to which the bare chip is bonded, in various conveyance modes.

[0171] The first processing station 502 has a buffer section 521, a second conveyance device 522, and a cleaning device 523. The cleaning device 523 removes the protective film from the bare chip in the state of the chip with frame, for example. In addition, the first processing station 502 can have an inspection device and a peeling device in addition to the cleaning device 523. The inspection device inspects whether the bonding state of the bare chip in the substrate W to which the bare chip is bonded is good or bad. The peeling device peels the bare chip whose bonding state is bad in the inspection of the inspection device from the substrate W.

[0172] In addition, the second conveyance device 522 of the first processing station 502 can use the conveyance device 30 having a plurality of end effectors 33. Thus, the second conveyance device 522 can convey the chip with frame on which the bare chip is mounted, the holding jig HJ from which the bare chip is removed, the substrate W, and the substrate W to which the bare chip is bonded, in various conveyance modes.

[0173] The second processing station 503 is provided with a buffer section 531, a third conveyance device 532, a first activation device 533, a first hydrophilization device 534, a second activation device 535, a second hydrophilization device 536, and a bonding device 537. The first activation device 533 activates the bonding surface of the die held in the chip with frame. The first hydrophilization device 534 hydrophilizes the bonding surface of the die held in the chip with frame. The second activation device 535 activates the bonding surface of the substrate W. The second hydrophilization device 536 hydrophilizes the bonding surface of the substrate W. The bonding device 537 individually detaches the die from the chip with frame and bonds the detached die with the substrate.

[0174] In addition, the third conveyance device 532 of the second processing station 503 can also apply the conveyance device 30 having a plurality of end effectors 33. Thereby, the third conveyance device 532 can convey the chip with frame on which the die is mounted, the holding jig HJ from which the die is removed, the substrate W, and the substrate W on which the die is bonded, in various conveyance manners.

[0175] Thus, in the bonding system 500, by applying the conveyance device 30 having the end effectors 33, the conveyance efficiency of the conveyed objects (the chip with frame on which the die is mounted, the holding jig HJ from which the die is removed, the substrate W, and the substrate W on which the die is bonded) can be improved.

[0176] Furthermore, Figure 16 The illustrated semiconductor manufacturing system is a transfer system 600 that performs screening and replacement of a plurality of dies (semiconductor chips) not illustrated that are attached to the holding jig HJ of the dicing frame F and the dicing tape P and are placed on a carrier (substrate). The transfer system 600 is also provided with an input / output station 601, a processing station 602, and a control device 609.

[0177] The input / output station 601 is configured substantially similarly to the input / output station 1 of the peeling system 100 described above and is provided with a placement section 611 and a first conveyance device 612. The placement section 611 places the cassettes C1, C2, C3, and C4. The cassette C1 accommodates the chip with frame on which a plurality of dies are attached to the holding jig HJ. The cassette C2 accommodates the holding jig HJ from which the dies are transferred. The cassette C3 accommodates the carrier before the dies are transferred. The cassette C4 accommodates the carrier to which the dies are transferred.

[0178] In addition, the first conveyance device 612, for example, applies the conveyance device 30 having the end effectors 33 described above (refer to FIG. 2) and the like. The first conveyance device 612 conveys the cassettes C1, C2, C3, and C4 in various conveyance manners. Figure 7The transport device 30 is applied to the semiconductor manufacturing system 600. The end effector 33 of the transport device 30 is configured to support the carrier from below with the first support portion 34 and to support the chip with the frame (the holding jig HJ) from below with the second support portion 35. The first transport device 612 (the transport device 30) has a plurality of end effectors 33, and thus can transport the chip with the frame, the holding jig HJ, the carrier without the bare chip, and the carrier with the bare chip in various transport modes.

[0179] The processing station 602 is provided with a buffer portion 621, a second transport device 622, and one or more (two) sorting devices 623. The sorting device 623 inputs the chip with the frame and the carrier into the inside of a processing container (not shown), and thus performs a process of transferring each bare chip of the chip with the frame to the carrier.

[0180] In addition, the second transport device 622 of the processing station 602 can also apply the transport device 30 having a plurality of end effectors 33. Thus, the second transport device 622 can also transport the chip with the frame, the holding jig HJ, the carrier without the bare chip, and the carrier with the bare chip in various transport modes.

[0181] As described above, the transport device 30, the semiconductor manufacturing system, and the transport method can efficiently transport the substrate and the frame by applying the end effector 33 having the first support portion 34 and the second support portion 35 to one sheet 36. In addition, the transport device 30 and the semiconductor manufacturing system can apply the end effector 33 to a plurality of transport arms, and thus can reduce manufacturing costs compared to a case where a plurality of end effectors are applied.

[0182] The transport device 30 adsorbs the substrate W with the first support portion 34 and adsorbs the frame with the second support portion 35, and thus can stably transport the substrate and the frame. Further, the transport device 30 is provided with three or more first adsorption pads 342 and three or more second adsorption pads 352, and thus can firmly fix the substrate W and the frame. Further, each second adsorption pad 352 supports the frame at a position higher than each first adsorption pad 342, and thus can avoid interference between the substrate W of the frame and each first adsorption pad 342.

[0183] The transport device 30 aligns the center of the substrate W supported with the first support portion 34 with the center of the frame supported with the second support portion 35, and thus can more stably transport the substrate W and the frame. In addition, the transport device 30 is provided with a plurality of transport arms 32 and a plurality of end effectors 33, and thus can further improve the transport efficiency of the substrate and the frame. Alternatively, the transport device 30 has a substrate end effector 43 capable of supporting the substrate W from above, and thus can more variously transport the substrate W and the frame.

[0184] The transport apparatus 30, the semiconductor manufacturing system, and the transport method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and altered in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be adopted in other structures without inconsistency, and can be combined within the scope of consistency.

Claims

1. A transport apparatus including a transport arm and a moving mechanism that moves the transport arm, wherein the transport arm includes an end effector that has: a first support portion that supports a substrate from below; and a second support portion that supports a frame disposed around the substrate from below.

2. The transport apparatus according to claim 1, wherein the first support portion adsorbs and supports the substrate, and the second support portion adsorbs and supports the frame.

3. The transport apparatus according to claim 2, wherein the first support portion has three or more first adsorption pads that adsorb the substrate, and the second support portion has three or more second adsorption pads that adsorb the frame.

4. The transport apparatus according to claim 3, wherein the second adsorption pads support the frame at a higher position than the first adsorption pads.

5. The transport apparatus according to any one of claims 1 to 4, wherein a center of the substrate supported by the first support portion coincides with a center of the frame supported by the second support portion.

6. The transport apparatus according to any one of claims 1 to 4, wherein the transport apparatus includes a plurality of the transport arms and a plurality of the end effectors.

7. The transport apparatus according to any one of claims 1 to 4, wherein the transport arm has a substrate end effector that is independent of the end effector and supports the substrate from above.

8. The transport apparatus according to any one of claims 1 to 4, wherein the frame is a dicing frame that has an opening portion closed by a dicing tape and holds the substrate attached to the dicing tape.

9. A semiconductor manufacturing system including a transport apparatus that transports a substrate and a frame disposed around the substrate, and a processing portion that houses and processes the substrate and the frame, wherein the transport apparatus includes: a transport arm; and a moving mechanism that moves the transport arm, and the transport arm includes an end effector that has: a first support portion that supports the substrate from below; and a second support portion that supports the frame from below.

10. The semiconductor manufacturing system according to claim 9, wherein the processing portion includes a peeling apparatus that peels the substrates of a stacked substrate in which a plurality of the substrates are joined to each other.

11. The semiconductor manufacturing system according to claim 9, wherein the processing portion includes a joining apparatus that joins the substrate to a bare chip.

12. The semiconductor manufacturing system according to claim 9, wherein the processing portion includes a sorting apparatus that transfers a semiconductor chip held by the frame to the substrate.

13. A transport method of a transport apparatus including a transport arm and a moving mechanism that moves the transport arm, wherein the transport method includes: a step of supporting a substrate from below by a first support portion of an end effector included in the transport arm and transporting the substrate; and a step of supporting a frame disposed around the substrate from below by a second support portion of the end effector and transporting the frame. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The second support part of the end effector, which is provided on the same plate as the first support part, supports a frame disposed around the substrate from below and transports the frame.

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