High throughput plasma cap for semiconductor manufacturing process chamber

Abstract

A semiconductor manufacturing process chamber is described having an RF isolator between a support ring and a showerhead, and / or an RF gasket between the showerhead and a gas funnel. The cap insert has a cap housing surrounding the cap insert, the cap insert is on the gas funnel, and the RF feed is in contact with the showerhead. A substrate support may be included and the substrate support may have an RF return path directed through the substrate support.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods for semiconductor manufacturing using plasma processing. In particular, embodiments of the present disclosure relate to apparatuses and methods for high temperature plasma processing with radio frequency isolation. BACKGROUND

[0002] Reliably producing sub-micron and smaller features is one of the key requirements for very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, as circuit technologies continue to shrink in size, the size and pitch of circuit features, such as interconnects, place additional demands on processing capabilities. Various semiconductor components, such as interconnects, vias, capacitors, transistors, require precise placement of high aspect ratio features. Reliable formation of these components is critical to further increasing device and density.

[0003] Additionally, the electronics device industry and semiconductor industry continue to strive for greater throughput while increasing the uniformity of layers deposited on substrates having increasingly larger surface areas. These same factors combined with new materials also provide for higher integration of circuitry per unit area on the substrate.

[0004] Current processing chamber lids are primarily used for plasma-based chemical vapor deposition (CVD) processes. These lids are not designed for atomic layer deposition (ALD) plasma processing. ALD processing requires faster saturation and fast purging capabilities.

[0005] Accordingly, there is a need in the art for apparatuses and methods for plasma enhanced atomic layer deposition with improved saturation and / or purging capabilities. SUMMARY

[0006] In some aspects, the technology described herein relates to a semiconductor manufacturing process chamber, comprising: a chamber body having a sidewall enclosing an interior, a bottom, and a lid; a support ring on the sidewall; an RF isolator on the support ring; a showerhead on the ceramic isolator, the showerhead having a front surface and a back surface defining a thickness of the showerhead, and a plurality of apertures extending through the thickness of the showerhead; a gas funnel on the showerhead, the gas funnel having a front surface and a back surface, having an opening extending through a center of the gas funnel, the front surface having a concave inner portion and an outer portion, the outer portion of the front surface of the gas funnel in contact with the back surface of the showerhead to form a gas plenum at the concave front surface between the back surface of the showerhead and the inner portion of the front surface of the gas funnel; a cap insert on the gas funnel, the cap insert having an upper portion and a lower portion, an opening in a bottom surface of the cap insert aligned with the opening in the gas funnel, the cap insert having at least one gas inlet in the upper portion; a cap housing around the cap insert, the cap housing in contact with the back surface of the gas funnel; and an RF feed in contact with the showerhead. BRIEF DESCRIPTION OF DRAWINGS

[0007] In order to enable a detailed understanding of the above-mentioned features of the present disclosure, it is described in more detail below, where some are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of the present disclosure and therefore should not be considered as limiting the scope thereof, as the present disclosure can allow other equivalent embodiments.

[0008] Figure 1 A cross-sectional schematic view of a semiconductor manufacturing process chamber 100 according to one or more embodiments of the present disclosure is shown.

[0009] Figure 2 An enlarged view of the semiconductor manufacturing process chamber 100 of Figure 1 at region II is shown.

[0010] Figure 3 A schematic representation of RF power connections in a semiconductor manufacturing process chamber 100 according to one or more embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0011] Before several exemplary embodiments of the present disclosure are described, it is to be understood that the present disclosure is not limited to the details of construction or processing steps set forth in the following description. The present disclosure is capable of other embodiments and is capable of being practiced or carried out in various ways.

[0012] As used in this specification and the appended claims, the term "substrate" refers to a surface upon which processing is performed or a portion of a surface upon which processing is performed. Those skilled in the art will appreciate, in light of the disclosure herein, that reference to a substrate can also refer to only a portion of the substrate, unless otherwise indicated herein. In addition, reference to depositing on a substrate can mean both a bare substrate and a substrate having one or more films or features deposited or formed thereon.

[0013] As used herein, "substrate" refers to any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process. For example, processing can be performed on a substrate surface including materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon doped silicon oxides, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, without limitation, semiconductor wafers. Substrates can be exposed to pre-processing treatments such as polishing, etching, reducing, oxidizing, hydroxylating, annealing, UV curing, e-beam curing, and / or baking the substrate surface. In addition to performing film processing directly on the surface of the substrate itself, in the present disclosure any of the film processing steps disclosed can also be performed on an underlayer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such underlayer as the context indicates. Thus, for example, when a film / layer or partial film / layer has been deposited onto a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0014] As used herein, "atomic layer deposition" or "cyclical deposition" refers to a process that includes sequential exposure of two or more reactive compounds to deposit a layer of material on a substrate surface. As used in this specification and the appended claims, the terms "reactive compound," "reactive gas," "reactive species," "precursor," "process gas," and the like are used interchangeably to mean a species having the ability to react (e.g., chemisorb, oxidize, reduce, cycloadd) with a substrate surface or a material on a substrate surface in a surface reaction. A substrate or portion of a substrate is sequentially exposed to two or more reactive compounds that are directed into a reaction zone of a processing chamber.

[0015] One or more embodiments of the present disclosure advantageously provide semiconductor manufacturing process chamber lids with faster saturation times. Some embodiments advantageously provide process chamber lids with increased purging capabilities. Some embodiments advantageously provide process chamber lids with high temperature plasma capabilities.

[0016] One or more embodiments of the present disclosure provide semiconductor manufacturing process chamber lids with radio frequency (RF) plasma capabilities on a high conductance showerhead lid. Some embodiments include an RF feedthrough with an RF match through a funnel portion of a gas distribution assembly.

[0017] In some embodiments, one or more isolators are incorporated to prevent RF leakage and have a complete ground path for RF return. In some embodiments, a cap housing made of ceramic material is used for RF isolation.

[0018] Some embodiments incorporate a showerhead with an increased number of holes with a larger diameter, resulting in increased flow conductance and increased operating temperature. In some embodiments, the showerhead has greater than 2100 holes. In some embodiments, the showerhead holes have a diameter of about 40 mils.

[0019] Some embodiments of the present disclosure incorporate a showerhead, a funnel, and a cap insert that are coated with a ceramic material. In some embodiments, the ceramic material includes aluminum oxide (AI2O3), also known as alumina. In some embodiments, the alumina showerhead, funnel, and / or cap insert allow for compatibility with chlorine (CI2) and hydrogen radical (H*) plasma.

[0020] Referring to Figures 1 to 2 One or more embodiments of the present disclosure relate to a semiconductor manufacturing process chamber 100. Figure 1 A cross-sectional schematic view of a semiconductor manufacturing process chamber 100 according to one or more embodiments of the present disclosure is shown. Figure 2 An enlarged view of the semiconductor manufacturing process chamber 100 at region II is shown. Figure 1 An enlarged view of the semiconductor manufacturing process chamber 100 at region II is shown.

[0021] The semiconductor manufacturing process chamber 100 includes a chamber body 102 having a sidewall 104, a bottom 106, and a chamber lid 108 that enclose an interior 109 of the chamber. The chamber body 102 can be made of any suitable material known to those skilled in the art. For example, in some embodiments, the chamber body 102 is made of stainless steel. The various components of the illustrated embodiment in the figures have different cross-hatching for visualization purposes. The different hatching is merely to more easily distinguish the parts and is not related to the structural material.

[0022] The illustrated semiconductor manufacturing process chamber 100 has a support ring 110 positioned on the sidewall 104. The support ring 110 can be considered a part of the sidewall 104, or a part of the chamber lid 108, or a separate component. The support ring 110 can be made of any suitable material known to those skilled in the art. For example, in some embodiments, the support ring 110 is made of stainless steel.

[0023] A showerhead 120 is located within the interior 109 of the semiconductor manufacturing process chamber 100. The showerhead 120 is part of a gas distribution assembly and can be referred to as a gas distribution plate.

[0024] The nozzle 120 has a front surface 122 and a back surface 124 that define the thickness of the nozzle 120. A plurality of orifices 126 extend through the thickness of the nozzle 120.

[0025] The thickness of the nozzle 120 is measured at the central portion of the nozzle 120, where gas can pass through the thickness, for example, through a plurality of orifices 126. Figure 2 Showing Figure 1 An enlarged view of region II. A portion of the nozzle 120 illustrated has a thinner section relative to the outer portion near the center of the component. The thickness T of the nozzle 120 is marked at the thinner central portion where the plurality of orifices 126 are located. In some embodiments, the nozzle 120 has a thickness less than that of a typical semiconductor manufacturing process chamber nozzle. In some embodiments, the thickness of the nozzle 120 is less than or equal to 0.5 inches, 0.4 inches, 0.3 inches, or 0.25 inches. Typical nozzles have a thickness greater than 1 inch. The reduced thickness according to the various embodiments of this disclosure uses less material than typical nozzles without sacrificing structural support.

[0026] In some embodiments, the number of pores 126 is greater than the number of typical nozzles. In some embodiments, at least 2,000 pores are present within the area of ​​nozzle 120. In some embodiments, nozzle 120 contains 2,000, 2,100, 2,200, 2,300, 2,400, or 2,500 pores.

[0027] Each of the plurality of pores 126 in some embodiments (e.g.) Figure 2 (As shown) It has an upper portion 126a, a middle portion 126b, and a lower portion 126c. The middle portion 126b is the thinnest part of the pore, and the lower portion 126c expands to distribute airflow over a wider range. The upper portion 126a can be any suitable shape, such as, but not limited to, Figure 2 The rectangular cross-section shown is illustrated. The size of the aperture 126 is measured at the middle portion 126b. In some embodiments, each aperture has a minimum diameter greater than or equal to 25 mils, 30 mils, 35 mils, or 40 mils. Typical nozzle apertures have a diameter of less than 15 mils. Even with more apertures and each aperture being larger than that of a conventional nozzle, the nozzle 120 maintains its structural integrity.

[0028] The nozzle 120 may be made of any suitable material known to those skilled in the art. In some embodiments, the nozzle 120 is made of a conductive material that can be used to generate plasma within the interior 109 of the semiconductor manufacturing process chamber 100. In some embodiments, the nozzle 120 comprises stainless steel.

[0029] In some embodiments, the nozzle 120 has increased flow conductance compared to conventional nozzles. Greater flow conductance allows for faster gas exchange within the interior 109 of the semiconductor manufacturing processing chamber 100. The number and size of the pores, as well as the thickness of the nozzle 120, affect the overall flow conductance. In some embodiments, the nozzle 120 has a flow conductance greater than or equal to 50 L / s, 55 L / s, 60 L / s, 65 L / s, or 70 L / s. For comparative purposes, a typical nozzle has a flow conductance of less than 10 L / s.

[0030] The thinner the nozzle, the larger the number and size of the pores, which affects the operating temperature of the nozzle 120. In some embodiments, the nozzle 120 has an operating temperature of up to and including 300 degrees Celsius, 275 degrees Celsius, 250 degrees Celsius, 225 degrees Celsius, or 200 degrees Celsius.

[0031] The flow conductance of nozzle 120 directly affects the amount of time required for gas exchange within the processing chamber. The amount of time required for the processing region 135 of the semiconductor manufacturing processing chamber 100 to become fully saturated is called the gas saturation time. A shorter gas saturation time means that the processing region 135 saturates more quickly and can be purified more rapidly. The gas saturation time can also be affected by the volume of the processing region 135. In some embodiments, the semiconductor manufacturing processing chamber 100 has a gas saturation time of less than or equal to 0.25 seconds, 0.2 seconds, 0.15 seconds, or 0.1 seconds. For comparison purposes, a typical atomic layer deposition processing chamber has a gas saturation time of approximately 1 second.

[0032] In some embodiments, the nozzle 120 has an outer flange 128 disposed on a support ring 110. One or more embodiments of this disclosure include an RF isolator 140 on which the nozzle 120 is disposed. As shown in the figures, in some embodiments, the RF isolator 140 is located on the support ring 110 and separates the nozzle 120 from the support ring 110 to prevent direct contact with the support ring 110. In the illustrated embodiment, the outer flange 128 of the nozzle 120 directly contacts the RF isolator 140. Figure 2 As shown, the nozzle 120 is connected to the support ring 110 via an RF isolator 140 using any suitable fastener 129 known to those skilled in the art. Suitable fasteners 129 include, but are not limited to, bolts. Suitable fasteners provide electrical isolation by being made of non-conductive materials or by including non-conductive sleeves (not shown) to ensure that there is no electrical short circuit between the nozzle 120 and the support ring 110.

[0033] To prevent gas leakage, one or more O-rings 142 may be positioned between the nozzle 120 and the RF isolator 140 and / or between the RF isolator 140 and the support ring 110. Suitable O-rings 142 include any material that can form a hermetically tight seal between the components. In some embodiments, suitable O-rings 142 are RF isolated to further prevent electrical short circuits between the nozzle 120 and the support ring 110.

[0034] The RF isolator 140 may be made of any suitable material capable of electrically isolating the nozzle 120 from the support ring 110. In some embodiments, the RF isolator 140 comprises a ceramic material. In some embodiments, the ceramic comprises alumina.

[0035] The thickness of the RF isolator 140 can affect the ability to fully electrically separate the nozzle 120 from the support ring 110. In some embodiments, the RF isolator 140 has a thickness ranging from 0.1 inches to 1 inch, or from 0.15 inches to 0.75 inches, or from 0.25 inches to 0.5 inches.

[0036] A gas funnel 130 is positioned on a nozzle 120. The gas funnel 130 has a front surface 132 and a back surface 134. An opening 136 extends through the center of the gas funnel 130. In some embodiments, the front surface 132 has a concave inner portion 132a and an outer portion 132b. The outer portion 132b of the front surface 132 of the gas funnel 130 contacts the rear surface 124 of the nozzle 120. A gas chamber 137 is formed between the back surface 124 of the nozzle 120 and the concave inner portion 132a of the front surface 132 of the gas funnel 130.

[0037] A cap insert 150 is located on a gas funnel 130. The cap insert 150 has an upper portion 152 and a lower portion 154. A cavity 151 extends from the top surface 155 through the length of the cap insert 150 to the bottom surface 157.

[0038] In some embodiments, the shape of the cavity 151 (e.g.) Figure 1 (As shown in the illustration) varies in length along the cavity 151. In the illustrated embodiment, the cavity 151 in the upper portion 152 of the cap insert 150 is generally cylindrical. A plurality of orifices 159 connect the top of the generally cylindrical portion of the cavity 151 to the top surface 155. In some embodiments, the upper portion 152 of the cavity 151 provides an inlet region for side-jet gas, which forms an vortex flow in the cavity 151 into the gas funnel 130. The length of the cavity 151 in the upper portion 152 can be any suitable length.

[0039] The hole 151 in the lower portion 154 of the cap insert 150 has a conical shape to connect the hole 151 in the upper portion 152 to the bottom surface 157. The angle and length of the conical portion of the hole 151 can be any suitable angle and / or length.

[0040] An opening 156 in the bottom surface 157 of the cap 150 is aligned with an opening 136 in the gas funnel 130. According to some embodiments, the opening 156 in the bottom surface 157 is sized to provide fluid communication between the cap 150 and the gas funnel 130 without introducing turbulence into the gas flowing from the cap 150 to the gas funnel 130.

[0041] The cap insert 150 has at least one gas inlet 158 ​​in its upper portion 152. In the illustrated embodiment, there are three gas inlets 158 in the upper portion 152, configured to provide gas flow through a cavity 151 formed along the length of the cap insert 150. In some embodiments, there are 2, 3, 4, 5, 6, 7, 8, 9, or 10 gas inlets 158. In some embodiments, there are 2, 3, 4, 5, 10, 15, or 20 gas inlets 158 in the upper portion 152 of the cap insert 150 to connect the side gas inlets 153 to the cavity 151. The cap insert 150 can be made of any suitable technology and any suitable material known to those skilled in the art.

[0042] In some embodiments, the cap insert 150 has an inlet 161 in its top surface 155. The inlet 161 is in fluid communication with a cavity 151 in the upper portion 152 of the cap insert 150. In the illustrated embodiment, the inlet 161 in the top surface 155 is in fluid communication with the cavity 151 in the upper portion 152 of the cap insert 150 via a plurality of orifices 159.

[0043] In some embodiments, such as Figure 1 As shown, a remote plasma source (RPS) 165 is connected to a cap insert 150. The RPS 165 provides a plasma flow through an inlet 161 in the top surface 155 of the cap insert 150 into a cavity 151.

[0044] The cap housing 160 is positioned to surround the cap insert 150. The cap housing 160 contacts the back surface 134 of the gas funnel 130. The cap housing 160 comprises a non-conductive material to isolate the cap insert 150 from electrical interference or to prevent contact with the RF feed 180 of the contact nozzle 120. In some embodiments, the cap housing 160 comprises ceramic. In some embodiments, the ceramic comprises alumina.

[0045] In some embodiments, the cap housing 160 has at least one opening for fluid communication with a side gas inlet 153 and a cavity 151 in the cap insert 150. At least one opening (not shown) allows gas from the side gas inlet 153 to flow through the cap housing 160 and into the cavity 151 of the cap insert 150. In some embodiments, the side gas inlet 153 is connected to the cap housing 160 using at least one O-ring 162.

[0046] An RF (radio frequency) feed 180 contacts a nozzle 120. In some embodiments, the RF feed 180 includes a coaxial connection to an inner conductor 182 and an outer conductor 184, separated by an insulating layer 183, as is known to those skilled in the art. The coaxial connection is... Figure 3 The diagram is shown schematically, with the inner conductor connected to nozzle 120. The outer conductor 184 can be connected to any part of the processing chamber that can be used to generate plasma. In the illustrated embodiment, the outer conductor 184 is connected to substrate support 210. Those skilled in the art will recognize that the connections of the inner conductor 182 and the outer conductor 184 can be varied or reversed, and the illustrated embodiment should not be construed as limiting the scope of the disclosure.

[0047] In some embodiments, the RF feeder 180 is connected to and in electrical communication with the nozzle 120. In some embodiments, an RF gasket 188 is located between the gas funnel 130 and the nozzle 120. In some embodiments, the RF gasket 188 is located outside an O-ring 189 that forms an hermetically tight seal around the gas chamber 137.

[0048] In some embodiments, the gas funnel 130 and the nozzle 120 are not in direct contact outside the RF gasket 188 to prevent RF conduction between the gas funnel 130 and the nozzle 120.

[0049] The RF gasket 188 may be made of any suitable material and have any suitable cross-sectional shape. In some embodiments, the RF gasket 188 comprises ceramic. In some embodiments, the ceramic comprises alumina.

[0050] Some embodiments of the semiconductor manufacturing processing chamber 100 include a substrate support 210 within the interior 109 of the chamber body 102. The substrate support 210 has a support surface 212 spaced apart from the nozzle 120 to create a processing region 135. The substrate support 210 includes support pillars 215. The substrate support 210 has a support surface 212 configured to support a semiconductor wafer 220. The support surface 212 is spaced apart from the chamber cover 108. The top surface 222 of the semiconductor wafer 220 faces the chamber cover 108, such that the top surface 222 is exposed to processing gases in the processing region 135.

[0051] In some embodiments, the substrate support 210 includes a heater 214. The heater 214 may be made of any suitable material known to those skilled in the art. In some embodiments, the heater 214 includes electrodes embedded within the substrate support 210. In some embodiments, a power source (now shown) is connected to the electrodes, and the power applied to the electrodes causes resistance heating in the heater 214, raising the temperature of the substrate support 210 and the semiconductor wafer 220.

[0052] In some embodiments, the substrate support 210 further includes an electrostatic chuck (ESC) (not shown). In embodiments with an ESC, at least one power source is connected to at least one electrode within the ESC and configured to polarize the electrode of the ESC to generate an electrostatic charge that can attract the semiconductor wafer 220 during processing. Those skilled in the art will be familiar with the design and construction of electrostatic chucks.

[0053] In some embodiments, such as Figure 3 The schematic diagram of the electrical connections shown illustrates that the semiconductor manufacturing processing chamber 100 includes an RF feed 180 configured to have an RF feed path 186 to a nozzle 120 and an RF return path 187 from a substrate support 210. The RF feed path and RF return path can be connected to the nozzle 120 and the substrate support 210 in any order. For example, in some embodiments, the RF feed path 186 is connected to the substrate support 210, and the RF return path 187 is connected to the nozzle 120. The RF feed path 186 and the RF return path 187 are separated by an RF isolator 140.

[0054] Some embodiments of the semiconductor manufacturing processing chamber 100 further include at least one controller 190. In some embodiments, at least one controller 190 is connected to an RF feed 180 or an RF power source 185.

[0055] In some embodiments, such as Figure 1 As shown, the controller 190 is coupled to one or more of the following: the semiconductor manufacturing processing chamber 100, the RF feeder 180 via the RF power source 185, the heater 214 of the substrate support 210, the side gas inlet 153 via one or more control valves, or components thereof. For example, the system controller 190 can control the operation of the semiconductor manufacturing processing chamber 100, actuators, valves, flow controllers, power supplies, etc., and any monitoring components included in the system that are known to those skilled in the art. In operation, the system controller 190 may be able to collect and provide feedback from the semiconductor manufacturing processing chamber 100 to coordinate system performance.

[0056] System controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuitry 196. CPU 192 can be one of any type of general-purpose processor that can be used in an industrial environment. Memory 194, or a non-transitory computer-readable medium, can be accessed by CPU 192 and can be one or more memories, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage. Support circuitry 196 is coupled to CPU 192 and may include caches, clock circuitry, input / output subsystems, power supplies, etc. The various methods disclosed herein can generally be implemented under the control of CPU 192, by which CPU 192 executes computer instruction code stored in memory 194 (or in memory within a specific processing chamber) as, for example, software routines. When the computer instruction code is executed by CPU 192, CPU 192 controls chambers or valves to perform processing according to various methods.

[0057] In some embodiments, the controller 190 has one or more predetermined configurations for controlling components of the semiconductor manufacturing processing chamber 100. In some embodiments, the system controller 190 has a first configuration for providing RF power across the nozzle 120 and the substrate support 210 to generate plasma within the processing region 135.

[0058] The terms "an embodiment," "some embodiments," "one or more embodiments," or "an embodiment" used in this specification refer to a specific feature, structure, material, or characteristic associated with that embodiment that is included in at least one embodiment of this disclosure. Therefore, the appearance of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in one embodiment" in different places in this specification does not necessarily refer to the same embodiment of this disclosure. Furthermore, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments.

[0059] Although the disclosure herein has been described with reference to specific embodiments, those skilled in the art will understand that the embodiments described are merely illustrative of the principles and applications of this disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the methods and apparatus of this disclosure without departing from the spirit and scope of this disclosure. Therefore, this disclosure may include modifications and variations within the scope of the appended claims and their equivalents.

Claims

1. A semiconductor manufacturing process chamber, comprising: a chamber body having a sidewall enclosing an interior, a bottom, and a lid; a support ring on the sidewall; an RF isolator on the support ring; a showerhead on the ceramic isolator, the showerhead having a front surface and a back surface defining a thickness of the showerhead, and a plurality of apertures extending through the thickness of the showerhead; a gas funnel on the showerhead, the gas funnel having a front surface and a back surface, having an opening extending through a center of the gas funnel, the front surface having a concave inner portion and an outer portion, the outer portion of the front surface of the gas funnel in contact with the back surface of the showerhead to form a gas plenum at the concave front surface between the back surface of the showerhead and the inner portion of the front surface of the gas funnel; a cap insert on the gas funnel, the cap insert having an upper portion and a lower portion, an opening in a bottom surface of the cap insert aligned with the opening in the gas funnel, the cap insert having at least one gas inlet in the upper portion; a cap housing surrounding the cap insert, the cap housing in contact with the back surface of the gas funnel; and an RF feed in contact with the showerhead.

2. The process chamber of claim 1, further comprising an RF gasket between the gas funnel and the showerhead.

3. The process chamber of claim 2, wherein the gas funnel and the showerhead have no direct contact outside of the RF gasket to prevent RF conductivity between the gas funnel and the showerhead.

4. The process chamber of claim 2, wherein the RF gasket comprises ceramic.

5. The process chamber of claim 4, wherein the ceramic comprises alumina.

6. The process chamber of claim 2, wherein the RF isolator comprises ceramic.

7. The process chamber of claim 6, wherein the ceramic comprises alumina.

8. The process chamber of claim 2, wherein the cap housing comprises ceramic.

9. The process chamber of claim 8, wherein the ceramic comprises alumina.

10. The process chamber of claim 2, wherein the cap insert has an inlet in a top face of the cap insert, the inlet in fluid communication with a hole in the upper portion of the cap insert.

11. The process chamber of claim 10, further comprising a remote plasma source connected to the cap insert to provide a plasma flow through the inlet in the top face of the cap insert into the hole.

12. The process chamber of claim 10, wherein the cap insert has at least one side gas inlet in the upper portion, the at least one side gas inlet in fluid communication with the hole. ​ 13. The processing chamber of claim 2, further comprising a substrate support within the interior of the chamber body, the substrate support having a support surface spaced a distance from the showerhead to create a processing region.

14. The processing chamber of claim 13, wherein the RF feed is configured to have an RF feed path to the showerhead and an RF return path from the substrate support, the RF feed path and the RF return path separated by the RF isolator.

15. The processing chamber of claim 14, further comprising at least one controller connected to the RF feed.

16. The processing chamber of claim 15, wherein the at least one controller has a first configuration to provide RF power across the showerhead and the substrate support to create a plasma in the processing region.

17. The processing chamber of claim 2, wherein the showerhead has at least 2000 apertures, each aperture having a minimum diameter greater than or equal to 30 mils.

18. The processing chamber of claim 17, wherein the showerhead has a flow conductance greater than 50 liters per second and a thickness less than 0.5 inches.

19. The processing chamber of claim 18, wherein the showerhead has an operating temperature up to and including 250 degrees Celsius.

20. The processing chamber of claim 18, wherein the processing region has a gas saturation time less than or equal to 0.25 seconds.

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