Method and system for rapidly preparing micropore array

Abstract

The invention relates to the technical field of laser processing, in particular to a method and system for rapidly preparing a micropore array, and the method comprises the following steps: S1, placing a workpiece to be processed on a high-precision three-dimensional motion platform; s2, a laser light path is adjusted, and a laser beam emitted by a laser sequentially passes through a beam shaping system, an acousto-optic deflector and a galvanometer and then is focused on the surface of the workpiece to be machined; s3, the acousto-optic deflector scans according to a pre-edited machining pattern, machining of a single micropore is conducted on the current machining point, and after machining of the single micropore is completed, the galvanometer jumps the laser beam to the next machining point; and S4, the step S3 is repeated until machining of the whole micropore array is completed. The acousto-optic deflector and the galvanometer work cooperatively, the acousto-optic deflector is used for carrying out path scanning according to a pre-edited machining pattern, machining of a single micropore is carried out on a current machining point, and after machining of the single micropore is completed, the galvanometer is used for enabling the laser beam to jump to the next machining point, so that the machining efficiency and the machining effect can be greatly improved; therefore, rapid preparation of the micropore array is realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser processing, in particular to a method and system for rapidly preparing a micro-hole array. BACKGROUND

[0002] Laser processing of a micro-hole array has the characteristics of high processing precision, fast processing efficiency, and no pollution. At present, a laser processing system composed of a laser, a galvanometer scanning system, and a high-precision three-dimensional motion platform is mainly used to process a micro-hole array of a metal material. However, there are the following problems:

[0003] 1. Processing efficiency: The galvanometer scanning system is used for processing. Since the galvanometer uses path cutting, the motor needs to be accelerated and decelerated during processing, and a delay needs to be added at the corner. Therefore, the processing efficiency is reduced, and the efficiency requirement of large-scale rapid processing cannot be met.

[0004] 2. Processing effect: The galvanometer scanning system is used for path processing. When the processing frequency is constant, the uniformity of the pulse changes at the corner, the starting point, and the ending point of the closed figure due to the acceleration and deceleration of the motor, thereby affecting the final processing effect. In addition, the repeated positioning accuracy of the motor also reduces the processing accuracy and affects the final processing effect.

[0005] 3. Processing range: The galvanometer and the field lens are used for processing. When processing small-size micro-holes, a field lens with a smaller focal length is selected. Commonly used field lenses include F100 or F56. The effective processing range is generally not more than 50mm x 50mm, and the processing requirement of a large-scale micro-hole array cannot be met.

[0006] 4. Micro-hole size and pitch: Due to the limitations of the wavelength, pulse width, and focal length of the laser source and the focusing system, the micro-hole size cannot break through 100um, and the pitch cannot break through 30um. Therefore, the requirement of high-end precision manufacturing for smaller micro-holes and smaller pitch micro-hole arrays cannot be met.

[0007] 5. Selectivity of processing materials: The thickness and type of the material have certain selectivity. In particular, for a laser source with a long pulse width, the thickness of the material is generally not more than 3mm, and the type of the material is generally concentrated in metal materials such as stainless steel, aluminum, and copper. Therefore, the demand for high-precision processing of hard and brittle materials such as silicon and silicon carbide cannot be met. SUMMARY

[0008] The present application aims to provide a method and system for rapidly preparing a micro-hole array, which can at least solve some of the defects in the prior art.

[0009] To achieve the above-mentioned purpose, the technical solution of the present application is a method for rapidly preparing a micro-hole array, comprising the following steps:

[0010] S1, placing a workpiece to be processed on a high-precision three-dimensional motion platform;

[0011] S2, adjusting a laser light path, so that a laser beam emitted by a laser passes through a beam shaping system, an acousto-optic deflector, and a galvanometer in turn and is focused on a surface of the workpiece to be processed;

[0012] S3, the acousto-optic deflector scans according to a pre-edited processing pattern to process a single micro-hole at a current processing point, and after the single micro-hole is processed, the galvanometer jumps the laser beam to a next processing point;

[0013] S4, repeating step S3 until the processing of the entire micro-hole array is completed.

[0014] As one of the embodiments, the acousto-optic deflector scans according to the pre-edited processing pattern to process the single micro-hole at the current processing point, comprising:

[0015] After the control system receives the start signal, control signals are sent to the laser, the acousto-optic deflector, and the galvanometer respectively, the laser receives the high-level signal and starts emitting light, the galvanometer receives the low-level signal and remains stationary, and the acousto-optic deflector receives the high-level signal and scans according to the pre-edited processing pattern to process the single micro-hole at the current processing point.

[0016] As one of the embodiments, after the single micro-hole is processed, the galvanometer jumps the laser beam to the next processing point, comprising:

[0017] After the single micro-hole is processed, the acousto-optic deflector sends a low-level signal to the control system, and the laser stops emitting light at the same time; after the control system receives the low-level signal from the acousto-optic deflector, a high-level signal is sent to the galvanometer, and after the galvanometer receives the high-level signal, the laser beam is jumped to the next processing point.

[0018] As one of the embodiments, in step S3, when the next processing point is within the processing range of the galvanometer, the laser beam is directly jumped to the next processing point by the galvanometer; when the next processing point is not within the processing range of the galvanometer, the laser beam is jumped to the next processing point by moving the workpiece to be processed along the XY plane by the high-precision three-dimensional motion platform in cooperation with the galvanometer.

[0019] As one of the embodiments, in step S3, during the processing of the single micro-hole, the workpiece to be processed is moved along the Z-axis direction by the high-precision three-dimensional motion platform.

[0020] As one of the embodiments, in step S2, according to the diameter of the single micro-hole of the micro-hole array to be processed and the spacing between the micro-holes, a suitable focusing system is selected to focus the laser beam.

[0021] As one of the embodiments, the laser is a superfast laser.

[0022] As one of the embodiments, the workpiece to be processed is of metal material or brittle material with high hardness.

[0023] The application further provides a system for rapidly preparing a micro-hole array, comprising a laser, a beam shaping system for shaping a laser beam emitted by the laser, an acousto-optic deflector for controlling the laser beam to process a single micro-hole, a galvanometer mirror for jumping the laser beam to a next processing point after the processing of the single micro-hole is completed, a focusing system for focusing the laser beam to a surface of a workpiece to be processed, and a high-precision three-dimensional motion platform for placing the workpiece to be processed, wherein the laser, the beam shaping system, the acousto-optic deflector, the galvanometer mirror and the focusing system are sequentially arranged along an optical path direction, and the high-precision three-dimensional motion platform is arranged below the focusing system.

[0024] As one of the embodiments, the system further comprises a control system, and the laser, the acousto-optic deflector, the galvanometer mirror and the high-precision three-dimensional motion platform are connected with the control system.

[0025] Compared with the prior art, the application has the following beneficial effects:

[0026] (1) The acousto-optic deflector and the galvanometer mirror are used in cooperation in the application, the acousto-optic deflector is used to perform path scanning according to a pre-edited processing pattern to process a single micro-hole at a current processing point, and the galvanometer mirror is used to jump the laser beam to a next processing point after the processing of the single micro-hole is completed, so that the advantages of fast deflection speed and high deflection precision of the acousto-optic deflector and the advantage of large scanning range of the galvanometer mirror can be simultaneously exerted, the processing efficiency and the processing effect are greatly improved, and the rapid preparation of the micro-hole array is realized.

[0027] (2) The path scanning processing of the acousto-optic deflector and the light emission of the laser are controlled by using the trig mode in the application, so that the phenomena of pulse stacking overlap or pulse omission at corners and starting points of closed patterns in the path scanning processing of the traditional galvanometer mirror are effectively avoided, and the high quality and consistency of the processing are ensured.

[0028] (3) The high-precision three-dimensional motion platform is used for motion splicing in the application, so that the processing width is greatly increased, and the processing of the micro-hole array with a large width is realized.

[0029] (4) the present application adopts the processing mode of acousto-optic deflector + galvanometer, cooperates with high-precision three-dimensional motion platform, and the selection of laser and focusing system, can realize the processing of micro-hole array with aperture less than 20um and hole spacing less than 25um, the processing efficiency reaches 100 holes / s and above, the consistency and roundness reaches 96% and above, the processing quality and processing efficiency are much higher than that of using galvanometer scanning to process micro-hole array;

[0030] (5) the laser of the present application adopts ultrafast laser, which can not only process metal workpieces, but also process high-hardness brittle materials, widening the range of workpiece materials that can be processed;

[0031] (6) in the processing of a single micro-hole, the high-precision three-dimensional motion platform realizes the function of dynamic focusing, which improves the thickness of the processed workpiece while ensuring the processing effect. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0033] Figure 1 The flow chart of the method for rapidly preparing micro-hole array provided by the embodiments of the present application;

[0034] Figure 2 The schematic diagram of the micro-hole array prepared for example 1 and comparative example 1;

[0035] Figure 3 The schematic diagram of the micro-hole array prepared for example 2 and comparative example 2;

[0036] Figure 4 The schematic diagram of the micro-hole array prepared for example 3 and comparative example 3. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0038] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0039] The terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features; in the description of the present application, unless otherwise stated, the meaning of "multiple" is two or more.

[0040] As Figure 1 shown, the embodiment provides a method for rapidly preparing a micropore array, comprising the following steps:

[0041] S1, placing a workpiece to be processed on a high-precision three-dimensional motion platform;

[0042] S2, adjusting the laser light path, so that the laser beam emitted by the laser passes through the beam shaping system, the acousto-optic deflector and the galvanometer in turn and is focused on the surface of the workpiece to be processed;

[0043] S3, the acousto-optic deflector scans according to the pre-edited processing pattern, processes a single micropore at the current processing point, and after the single micropore is processed, the galvanometer jumps the laser beam to the next processing point;

[0044] S4, repeat step S3 until the entire micropore array is processed.

[0045] The present application adopts the cooperation of acousto-optic deflector and galvanometer, uses the acousto-optic deflector to scan the path according to the pre-edited processing pattern, processes a single micropore at the current processing point, and after the single micropore is processed, uses the galvanometer to jump the laser beam to the next processing point, which can simultaneously exert the advantages of fast deflection speed and high deflection precision of the acousto-optic deflector and the advantage of large scanning range of the galvanometer, greatly improving the processing efficiency and processing effect, thereby realizing the rapid preparation of the micropore array.

[0046] In some embodiments, the acousto-optic deflector scans according to the pre-edited processing pattern, processes a single micropore at the current processing point, comprising:

[0047] After the control system receives the start signal, it sends control signals to the laser, the acousto-optic deflector and the galvanometer respectively. The laser receives the high level signal and starts emitting light, the galvanometer receives the low level signal and remains stationary, and the acousto-optic deflector receives the high level signal and scans according to the pre-edited processing pattern to process a single micro-hole at the current processing point.

[0048] In some embodiments, after the single micro-hole processing is completed, the galvanometer jumps the laser beam to the next processing point, including:

[0049] After the single micro-hole processing is completed, the acousto-optic deflector sends a low level signal to the control system, and the laser stops emitting light at the same time. After the control system receives the low level signal from the acousto-optic deflector, it sends a high level signal to the galvanometer. After the galvanometer receives the high level signal, it jumps the laser beam to the next processing point.

[0050] In this embodiment, the trig mode is used to control the path scanning processing of the AOD device and the light emission of the laser, effectively avoiding the phenomenon of pulse accumulation overlap or pulse omission at the starting point of the corner and closed pattern in the path scanning processing of the traditional galvanometer, thereby ensuring the high quality and consistency of the processing.

[0051] Further, before step S3, the processing pattern edited in the operating system is set with the information of the target point array. The information of the target point array includes the arrangement of the micro-hole array, the diameter of the single micro-hole, and the hole spacing, etc.

[0052] Optimizing the above embodiment, in step S3, when the next processing point is within the processing range of the galvanometer, the laser beam is directly jumped to the next processing point by the galvanometer; when the next processing point is not within the processing range of the galvanometer, the laser beam is jumped to the next processing point by the high-precision three-dimensional motion platform driving the workpiece to be processed to move along the XY plane in cooperation with the galvanometer. In this embodiment, the galvanometer moves the focused spot to the next processing point by rotating the motor, and the high-precision three-dimensional motion platform moves the focused spot to the next processing point by driving the workpiece to be processed to move along the X-axis and Y-axis; the high-precision three-dimensional motion platform can realize motion splicing, and the processing range is theoretically equivalent to the movement stroke of the displacement table, greatly increasing the processing range, thereby realizing the processing of the micro-hole array with a large processing range.

[0053] Further, in step S3, during the processing of the single micro-hole, the workpiece to be processed is moved along the Z-axis direction by the high-precision three-dimensional motion platform. When the acoustic-optic deflector scans according to the pre-edited processing pattern to process the single micro-hole at the current processing point, the high-precision three-dimensional motion platform is used to move the workpiece to be processed up and down along the Z-axis direction to realize the translation of the laser focal point. By controlling the speed and stroke of the movement, dynamic focusing of the laser can be realized, which can greatly improve the processable workpiece thickness, even up to 3 mm or more.

[0054] Further, in step S2, according to the diameter of the single micro-hole of the micro-hole array to be processed and the spacing between the micro-holes, a suitable focusing system is selected to focus the laser beam. Specifically, the focusing system can adopt a field lens, an objective lens, a focusing lens group, or a Bessel cutting head. Further, when the diameter of the single micro-hole and the spacing between the micro-holes are less than 10 um, an objective lens can be used for focusing; when the diameter of the single micro-hole and the spacing between the micro-holes are greater than or equal to 10 um, a field lens can be used for focusing. In this embodiment, the objective lens can focus the laser to a spot size of about 1 um, greatly reducing the diameter of the single micro-hole and the spacing between the micro-holes in the micro-hole array, and increasing the diameter and spacing of the micro-holes in the traditional laser-processed micro-hole array to below 10 um; the field lens can focus the infrared wavelength laser to a spot size of 30-50 um, and the ultraviolet wavelength laser to a spot size of 10-15 um.

[0055] In this embodiment, the laser is an ultrafast laser. The system can be equipped with a laser light source with a suitable wavelength and pulse width according to the material of the workpiece to be processed. Specifically, the ultrafast laser can be an infrared femtosecond laser, an ultraviolet femtosecond laser, etc., all of which can provide a short-wavelength, short-pulse-width laser light source.

[0056] In this embodiment, the workpiece to be processed is a metal material or a high-hardness brittle material. The laser of the present application adopts an ultrafast laser, especially an ultraviolet femtosecond laser, which has the characteristics of large pulse energy, short action time, extremely high peak power density, etc., and can process almost any high-hardness brittle material, such as silicon, silicon carbide, diamond, etc. The material type of the workpiece to be processed is no longer limited to metal materials.

[0057] The embodiment also provides a system for rapidly preparing a micropore array, which comprises a laser, a beam shaping system for shaping a laser beam emitted by the laser, an acousto-optic deflector for controlling the laser beam to machine a single micropore, a galvanometer mirror for jumping the laser beam to a next machining point after machining of the single micropore is completed, a focusing system for focusing the laser beam to a surface of a workpiece to be machined, and a high-precision three-dimensional motion platform for placing the workpiece to be machined, wherein the laser, the beam shaping system, the acousto-optic deflector, the galvanometer mirror, and the focusing system are sequentially arranged along an optical path direction, and the high-precision three-dimensional motion platform is arranged below the focusing system.

[0058] Further, the system further comprises a control system, and the laser, the acousto-optic deflector, the galvanometer mirror, and the high-precision three-dimensional motion platform are connected with the control system.

[0059] In the embodiment, the acousto-optic deflector deflects the incident laser by using the diffraction effect of an acousto-optic crystal, and has high deflection precision and high deflection speed. The deflection precision can reach nanometer level within a range of 50 um x 150 um, which is much higher than the angle deflection precision of the galvanometer motor. The deflection speed is much faster than the deflection speed of the galvanometer motor.

[0060] In the embodiment, the beam shaping system is used to expand, shape, or modulate the original Gaussian spot emitted by the laser according to machining requirements. The beam shaping system can specifically adopt an expander, a DOE (diffractive optical element), an SLM (spatial light modulator), or other shaping devices.

[0061] In the embodiment, the focusing system is used to focus the laser beam. The focusing system can be selected according to the diameter of a single micropore of the micropore array to be machined and the spacing between the micropores, so as to focus the light beam into a spot with a proper size. The focusing system can specifically adopt a field lens, an objective lens, a focusing lens group, or a Bessel cutting head. In the embodiment, when the micropore array to be machined has a pore diameter less than 10 um, the laser spot can be focused to 5 um or below by using the objective lens, and the machining can be performed by cooperating with the PSO function of the high-precision three-dimensional motion platform, so as to realize machining of the micropore array.

[0062] The method of the present application is described in detail below by using the following examples.

[0063] Example 1 and Comparative Example 1: A micropore array with a 40X40 array, a single-pore diameter of 32 um, and a pore spacing of 25 um is prepared, and the machining range is 2.25 mm x 2.25 mm.

[0064] Example 2 and Comparative Example 2: A micropore array with a 40X40 array, a single-pore diameter of 25 um, and a pore spacing of 25 um is prepared, and the machining range is 2.25 mm x 2.25 mm.

[0065] Example 3 and Comparative Example 3: A microwell array with a 40X40 array, a single hole diameter of 16 um, and a hole spacing of 25 um was prepared, and the processing area was 2.25 mm x 2.25 mm.

[0066] Examples 1-3: A Gaussian beam was emitted by the ultraviolet femtosecond laser, shaped by a beam expander to the target diameter, then deflected by an AOD (acousto-optic deflector) and a galvanometer mirror, and finally focused on the workpiece to be processed on a high-precision three-dimensional motion platform by an F56 field lens. The processing pattern was edited in the device operating system (host computer), and the information of the target point array was set. After clicking the start signal, the operating system transmitted the signal to the control system (processing board card). The control system (processing board card) transmitted the signal to the laser, the AOD (acousto-optic deflector), and the galvanometer mirror, respectively. The laser received the high-level signal and started emitting light according to the given light-emitting mode (trig mode). The galvanometer mirror received the low-level signal and remained stationary. The acousto-optic deflector received the high-level signal and scanned according to the pre-edited processing pattern to process a single microwell at the current processing point. After the single microwell was processed, the acousto-optic deflector sent a low-level signal to the control system, and the laser stopped emitting light at the same time. After the control system received the low-level signal from the acousto-optic deflector, it sent a high-level signal to the galvanometer mirror. The galvanometer mirror received the high-level signal and jumped to the next processing point. The above actions were repeated, and the high-precision three-dimensional motion platform was used to realize the splicing of the motion until the entire microwell array was processed.

[0067] Comparative Examples 1-3: A Gaussian beam was emitted by the ultraviolet femtosecond laser, shaped by a beam expander to the target diameter, then deflected by a galvanometer mirror, and finally focused on the workpiece to be processed on a high-precision three-dimensional motion platform by an F56 field lens. The processing pattern was edited in the device operating system (host computer), and the information of the target point array was set. After clicking the start signal, the operating system transmitted the signal to the control system (processing board card). The control system (processing board card) transmitted the signal to the laser and the galvanometer mirror, respectively. The laser received the signal and started emitting light. The galvanometer mirror received the signal and scanned according to the pre-edited processing pattern to process a single microwell at the current processing point. After the single microwell was processed, the galvanometer mirror jumped to the next processing point. The above single pattern processing process was repeated, and the high-precision three-dimensional motion platform was used to realize the splicing of the motion until the entire microwell array was processed.

[0068] The microwell arrays prepared in Example 1 and Comparative Example 1 are shown in Figure 2 The microwell arrays prepared in Example 2 and Comparative Example 2 are shown in Figure 3 The microwell arrays prepared in Example 3 and Comparative Example 3 are shown in Figure 4The time for processing the micropore array and the efficiency of processing the micropores of Examples 1-3 and Comparative Examples 1-3 are shown in Table 1. Among them, the efficiency of processing the micropores = total number of holes / time for processing the micropore array.

[0069] Table 1 Time for processing the micropore array and the efficiency of processing the micropores of Examples 1-3 and Comparative Examples 1-3

[0070]

[0071] From Figures 2-4 It can be seen that the micropore array processed by the method of the present application has higher consistency and roundness and better processing quality compared to Comparative Examples 1-3; from Table 1, it can be seen that the method of the present application can significantly improve the efficiency of processing the micropores compared to Comparative Examples 1-3.

[0072] The above description is merely preferred embodiments of the present application but not to limit the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for rapidly fabricating a microporous array, characterized in that, Includes the following steps: S1. Place the workpiece to be processed on a high-precision three-dimensional motion platform; S2. Adjust the laser beam path so that the laser beam emitted by the laser passes through the beam shaping system, acousto-optic deflector and galvanometer in sequence and is then focused on the surface of the workpiece to be processed. S3. The acousto-optic deflector scans according to the pre-edited processing pattern and processes a single micro-hole at the current processing point. After the processing of a single micro-hole is completed, the galvanometer jumps the laser beam to the next processing point. S4. Repeat step S3 until the entire micropore array is fabricated.

2. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: The acousto-optic deflector scans according to a pre-edited processing pattern to process a single micro-hole at the current processing point, including: After receiving the start signal, the control system sends control signals to the laser, acousto-optic deflector, and galvanometer respectively. The laser receives the high-level signal and starts emitting light, the galvanometer receives the low-level signal and remains stationary, and the acousto-optic deflector receives the high-level signal and scans according to the pre-edited processing pattern to process a single micro-hole at the current processing point.

3. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: After the processing of a single micro-hole is completed, the galvanometer will redirect the laser beam to the next processing point, including: After a single micro-hole is processed, the acousto-optic deflector sends a low-level signal to the control system, and the laser stops emitting light at the same time. After receiving the low-level signal from the acousto-optic deflector, the control system sends a high-level signal to the galvanometer. After receiving the high-level signal, the galvanometer jumps the laser beam to the next processing point.

4. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: In step S3, when the next processing point is within the processing area of ​​the galvanometer, the laser beam is directly transferred to the next processing point through the galvanometer; when the next processing point is not within the processing area of ​​the galvanometer, the workpiece to be processed is moved along the XY plane by a high-precision three-dimensional motion platform in conjunction with the galvanometer to transfer the laser beam to the next processing point.

5. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: In step S3, during the processing of a single microhole, the workpiece to be processed is moved along the Z-axis by a high-precision three-dimensional motion platform.

6. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: In step S2, a suitable focusing system is selected to focus the laser beam based on the diameter of a single micro-hole in the micro-hole array to be processed and the spacing between the micro-holes.

7. The method for rapidly fabricating microporous arrays as described in claim 1, characterized in that: The laser is an ultrafast laser.

8. The method for rapidly fabricating a microporous array as described in claim 1, characterized in that: The workpiece to be processed is made of metal or a brittle material with high hardness.

9. A system for rapidly fabricating microporous arrays, characterized in that: The system includes a laser, a beam shaping system for shaping the laser beam emitted by the laser, an acousto-optic deflector for controlling the laser beam to process a single micro-hole, a galvanometer for jumping the laser beam to the next processing point after processing a single micro-hole, a focusing system for focusing the laser beam onto the surface of the workpiece to be processed, and a high-precision three-dimensional motion platform for placing the workpiece to be processed. The laser, the beam shaping system, the acousto-optic deflector, the galvanometer, and the focusing system are arranged sequentially along the optical path, and the high-precision three-dimensional motion platform is located below the focusing system.

10. The system for rapidly fabricating microporous arrays as described in claim 9, characterized in that: It also includes a control system, and the laser, the acousto-optic deflector, the galvanometer, and the high-precision three-dimensional motion platform are all connected to the control system.

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