Efficient and stable heating type solid precursor source bottle

Abstract

The invention discloses an efficient and stable heating type solid precursor source bottle, and relates to the technical field of semiconductor manufacturing, the efficient and stable heating type solid precursor source bottle comprises a cavity module, the cavity module is composed of a left cavity and a right cavity, an exhaust module is arranged in the cavity module, and the exhaust module can enable input carrier gas to flow in a covering mode; the left cavity is arranged in the left cavity, so that the left cavity is in uniform contact with a solid precursor in the left cavity, the left cavity is specially used for storage and volatilization reaction of the solid precursor, an adaptive heating and volatilization space can be provided for the precursor, and local accumulation caused by space limitation is reduced; the right cavity focuses on pure transportation of gas, the inner wall of the right cavity is polished, adsorption residues of precursor gas on the cavity walls are further reduced, concentration fluctuation caused by mixing of residual gas and newly generated gas is avoided, and the separation structure greatly reduces the residual quantity of a solid source.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a high-efficiency and stable heating type solid-state precursor source bottle. BACKGROUND

[0002] The high-efficiency and stable heating type solid-state precursor source bottle relates to the technical field of key components for atomic layer deposition (ALD) equipment, and is especially suitable for loading and transporting solid-state precursors such as dichlorodioxymolybdenum and trimethyl indium 3, and is widely used in the fields of semiconductors, optoelectronics and the like.

[0003] However, the prior art still has the following defects in specific use: 1. The traditional source bottle directly transports solid sources by using a single cavity, which leads to natural limitations in the contact mode of the carrier gas and the solid-state source material. A simple carrier gas inlet, outlet and basic storage area are usually arranged in the single cavity, and there is a lack of flow guide structure for guiding the uniform distribution of airflow. After the carrier gas enters the cavity, it is easy to directly discharge from the outlet along the shortest path, forming a "airflow short circuit" phenomenon. At the same time, the solid-state source material is directly stacked at the bottom of the cavity without layering or dispersion design. The carrier gas can only contact the surface layer of the material and cannot penetrate to the inside of the stack. This single space design greatly limits the effective contact area of the carrier gas and the source material, and the material stacking area is easy to be locally compacted due to uneven airflow scouring, further reducing the volatilization interface, ultimately leading to uneven volatilization of the source material, increased cavity residues and reduced transportation efficiency.

[0004] This design results in large fluctuations in the concentration of precursors carried by the carrier gas, making the supply of precursors in the reaction chamber unstable, and the deposited thin film is prone to problems such as uneven thickness and composition deviation, resulting in a decrease in product yield. In addition, a large amount of cavity residues are generated due to insufficient volatilization of the source material, and the actual utilization rate is only 60% to 70%, resulting in serious waste of precursors. The residual material needs to be frequently disassembled and cleaned, increasing the cost of manual maintenance and the downtime of the equipment.

[0005] 2. Although some source bottles in the prior art are equipped with a filter structure, the characteristics of solid-state precursors and the actual transportation scenario are not fully considered during the design stage, resulting in a disconnection between the pore size design and the actual demand. On the one hand, the size of the agglomerated particles that may be formed after the volatilization of the precursors is not accurately calculated during the design, and a single pore size is set only according to the size of conventional solid particles, without considering the size difference of the agglomerated particles that may be generated due to temperature fluctuations and changes in carrier gas flow rate during the heating and volatilization process of different precursors. On the other hand, in order to avoid the influence of the filter structure on the airflow velocity, excessive pursuit of "large pore size and low resistance" ignores the need for interception of agglomerated particles, and the filter structure cannot effectively play a role in the end.

[0006] Unreasonable filter structure pore size will have multiple negative effects on subsequent thin film deposition process and equipment operation: first, the solid particle agglomerates that are not intercepted will adhere to the surface of the deposited thin film and form impurity points or defect areas when entering the ALD reaction chamber with the carrier gas, resulting in a decrease in thin film purity and a significant reduction in product yield; second, the agglomerated particles are easy to accumulate at the gas inlet, pipeline valves and other parts of the reaction chamber, causing pipeline blockage, which not only increases maintenance time and cost due to frequent shutdown and disassembly for cleaning, but also may cause the gas tightness of the equipment to decrease due to particle abrasion of valve sealing elements, thereby causing the risk of precursor leakage.

[0007] 3. The existing source bottle is equipped with precursor particle materials inside, and the particle materials in the source bottle are reacted by the entering reaction gas flow. During the entire process, the reaction gas flow passes through the gaps of the precursor particle materials, and at the same time, the reaction gas flow and the precursor particle materials react to produce new gaseous materials which are output in the form of gas flow. In this process, the precursor particle materials are gradually reacted, so that the passing state of the precursor particle materials and the reaction gas flow changes constantly from the beginning of the reaction to the end of the reaction. Specifically, the particle layer is dense and the gaps are uniform at the beginning of the reaction, and the particle layer is loose and the gaps are irregular at the end of the reaction, so that the path, rate and contact area of the reaction gas flow passing through the precursor particle materials change constantly during the entire reaction period, and a stable passing state cannot be maintained, thus making the reaction process very uneven and the "thermal induced solid phase reaction" in the source bottle very uneven.

[0008] On the one hand, the unevenness of the thermal induced solid phase reaction directly leads to a dramatic fluctuation in the concentration of the generated gaseous products, and the purity and consistency of the products cannot be guaranteed, so the subsequent collection, metering and use of the products need to be frequently adjusted and adapted, which seriously affects the production efficiency and process stability. On the other hand, the contact state between the reaction gas flow and the precursor particle materials changes constantly, and local over-reaction or insufficient reaction may occur; the over-reaction area is easy to produce impurities, and the insufficient reaction area causes waste of precursor particles, and the particles that are not completely reacted may enter the subsequent pipeline with the gas flow, increasing the risk of pipeline blockage, which not only increases the equipment maintenance cost, but also may cause impurities to mix in, affecting the quality of the final product and causing adverse effects on the entire production process.

[0009] Therefore, in view of the above, the present application proposes a high-efficiency and stable heating type solid precursor source bottle to make up for and improve the shortcomings of the prior art. SUMMARY

[0010] To solve the above technical problems, the present application provides a high-efficiency and stable heating type solid precursor source bottle to solve the technical problems raised in the background art.

[0011] To achieve the above object, the technical scheme adopted by the present application is: the high-efficiency and stable heating type solid precursor source bottle comprises a cavity module, the cavity module is composed of a left cavity and a right cavity, and an exhaust module is arranged inside the cavity module, the exhaust module can make the input carrier gas flow in a covering mode, thereby uniformly contacting the solid precursor inside the left cavity, and the separation type structure design of the left cavity for source storage reaction and the right cavity for pure transportation can effectively reduce the residual amount of the solid source, thereby ensuring the high efficiency and stability of the solid precursor source transportation.

[0012] Further, the left cavity is communicated with a carrier gas inlet at the top as a carrier gas input channel, the right cavity is communicated with an exhaust interface at the top for output of the precursor gas, and a receiving base is arranged below the two cavities, and a heating assembly is integrated inside the receiving base to provide a stable heating environment for the left cavity storage area and the right cavity transportation area through heat conduction.

[0013] Further, the left cavity and the right cavity are cylindrical structures with equal heights, and the radius size ratio of the two is three to one, the volume of the left cavity is adapted to the storage requirement of the solid precursor, and the solid precursor can be reasonably accommodated in the cavity; the inner wall of the right cavity is polished, which helps to reduce the resistance of the gas flowing in the cavity and reduce the adsorption and residue of the precursor gas on the cavity wall.

[0014] Further, the exhaust module comprises an output disc arranged inside the left cavity, the carrier gas inlet is located directly above the output disc, and a plurality of circular hole interface pipes are uniformly arranged on the surface of the output disc.

[0015] Further, the hole positions of the circular hole interface pipes are distributed in three concentric circles of inner, middle and outer layers with the center of the output disc as the reference, and the number of hole positions increases from the inner layer to the outer layer along the radial direction, that is, the number of hole positions in the outer layer is more than that in the middle layer, and the number of hole positions in the middle layer is more than that in the inner layer; the hole diameter size is inversely matched, that is, the hole diameter of the inner layer is larger than that of the middle layer, and the hole diameter of the middle layer is larger than that of the outer layer, and the radial gradient design of increasing number and decreasing hole diameter can ensure the uniformity of gas flow output through the hole channels of different levels, and avoid the problems of local gas flow concentration or weakness caused by single hole diameter or number distribution.

[0016] Further, the output disc adopts a recessed inclined surface structure with the center as the symmetry point, the profile of the output disc is gently concave from the edge area to the center axis, forming a symmetrical inclined surface layout, but the circular hole interface pipes are uniformly distributed in the three layers of inner, middle and outer layers, and the gas output end surfaces of the circular hole interface pipes are kept in the same horizontal plane, the coplanarity of the interface end surfaces ensures that the initial heights of the gas flows output by the circular holes in each layer are consistent, avoids the gas flow disturbance caused by the difference in output height, and further ensures the uniformity and stability of the carrier gas flow.

[0017] Furthermore, the exhaust module also includes a guide plate assembled inside the left cavity. The outermost edge of the guide plate has through holes evenly distributed throughout. An annular wall cylinder is installed inside the left cavity, and a raised guide surface is assembled below the annular wall cylinder.

[0018] Furthermore, the outer edge of the raised guide surface has a horizontal mesh-like structure, and the middle has an upwardly sloping, smooth raised structure. The annular wall cylinder corresponds to the boundary position between the horizontal and inclined surfaces of the raised guide surface, ensuring that the horizontal surface of the raised guide surface corresponds to the through hole position of the guide plate, and the outer wall of the annular wall cylinder and the inner wall of the left cavity form a carrier gas flow channel.

[0019] Furthermore, a dispersion disk is fixedly connected to the center of the left cavity. The dispersion disk is made of thermally conductive material and is thermally connected to the heating component through the side wall of the left cavity. The surface of the dispersion disk is uniformly provided with through circular holes, and the edge of the dispersion disk is designed with an inwardly inclined chamfer. An inclined guide surface is fixedly connected to the bottom wall of the left cavity to guide the solid precursor source to gather towards the center, reducing dead corner residue inside the left cavity.

[0020] Furthermore, a flow guiding module is installed inside the receiving base. The flow guiding module includes a filter screen one installed at the center of the inclined flow guiding surface. An inlet pipe is connected to the lower part of the filter screen one. A bidirectional connecting pipe is connected to the lower part of the inlet pipe. An outlet pipe is connected to the end of the bidirectional connecting pipe away from the inlet pipe. A filter screen two is installed above the outlet pipe. The filter screen two is located at the center of the bottom wall of the right cavity.

[0021] Furthermore, the edges of both filter screen one and filter screen two are chamfered to prevent solid particles from getting stuck. The effective filtration area of ​​filter screen one accounts for half of the cross-sectional area of ​​the bottom of the left cavity, while the effective filtration area of ​​filter screen two accounts for two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity. The aperture range of filter screen one is 0.5 to 1 mm, while the aperture range of filter screen two is less than 0.5 mm.

[0022] Furthermore, the inlet pipe, the bidirectional connecting pipe, and the outlet pipe form a composite channel between the filter screen one and the filter screen two. Specifically, the inlet pipe has a tapered constriction section at the end, the bidirectional connecting pipe has a cylindrical throat in the middle, and the outlet pipe has a tapered diffusion section at the end.

[0023] Compared with the prior art, the beneficial effects of the present invention are: (1) The cavity module adopts a separate design with the left cavity for source reaction and the right cavity for pure transport, which improves the core defect of the traditional single cavity source bottle storage and transport mixture. The left cavity of this device is specifically used for the storage and volatilization reaction of solid precursors, which can provide suitable heating and volatilization space for precursors and reduce local accumulation caused by space limitation; the right cavity focuses on the pure transport of gas. Its inner wall polishing treatment further reduces the adsorption residue of precursor gas on the cavity wall, and avoids the concentration fluctuation caused by the mixing of residual gas and newly generated gas. This separation structure not only greatly reduces the amount of solid source residue, but also ensures the stability of precursor gas from volatilization to transport, effectively improves the utilization rate of solid precursors and reduces the waste of valuable precursors.

[0024] The cylindrical design, with equal height and a radius ratio of 3:1 for the left and right cavities, combined with the volume of the left cavity adapted to store solid precursors, maximizes the source storage capacity of the left cavity within a limited space in actual use, meeting long-term process requirements and avoiding frequent precursor replenishment. Meanwhile, the smaller radius of the right cavity, along with the polished inner wall, reduces airflow diffusion and eddies within the cavity, allowing the airflow to flow more concentratedly along the vertical path. This ensures rapid and stable flow of precursor gas, preventing residual gas from affecting the purity of subsequent transport gases, and further improving thin film deposition quality and process continuity.

[0025] (2) The exhaust module enables the input carrier gas to uniformly contact the solid precursor inside the left cavity in a covering flow, which improves the problems of "airflow short circuit" and uneven contact of carrier gas in the existing technology. The output disk of the exhaust module of this device has a three-layer gradient channel design with inner, middle and outer layers, combined with the concave inclined structure and the interface end face coplanar design, so that the carrier gas can achieve full coverage distribution in the left cavity, avoiding the situation of local airflow concentration or weakness. At the same time, when the carrier gas flows downward, it passes through the heat-conducting material dispersion disk, which is heated to the temperature suitable for the volatilization of the precursor, and the precursor powder can be dispersed by the airflow impact force to ensure full contact between the carrier gas and the precursor. This uniform airflow distribution and full contact make the precursor volatilization rate more stable, and the concentration fluctuation of the precursor carried by the carrier gas is greatly reduced, which effectively avoids the problems of uneven film thickness and composition deviation caused by concentration fluctuation in traditional devices, and improves the product yield.

[0026] The circular port interface pipes are arranged in three concentric circles with the center of the output disk as the reference, with the number increasing from the inside to the outside and the diameter decreasing in the opposite direction. In the actual gas transportation process, after the carrier gas enters from directly above the output disk, it is guided by the concave slope and tends to converge towards the center. The inner layer uses a large diameter hole to avoid excessive local pressure due to the concentrated airflow, while the outer layer compensates for insufficient flow velocity by increasing the number of holes due to the dispersed airflow. The reverse matching of the two makes the airflow output of each layer of holes tend to be balanced, avoiding excessively strong or weak local airflow caused by a single hole diameter or number. At the same time, this gradient layout enables the carrier gas to form a full-coverage airflow field after being output from the output disk, which acts evenly on the lower dispersion disk and the precursor, ensuring that there is no dead angle contact between the carrier gas and the precursor, further improving the uniformity of volatilization and laying the foundation for subsequent stable transportation.

[0027] (3) During the process of guiding gas flow, the diversion module achieves efficient purification and stable transport of mixed gas flow, and improves the defects of poor interception effect and easy blockage of pipeline in traditional source bottle filter structure. The two-stage filter screen of the diversion module of this device forms a graded interception: the first filter screen first intercepts large particles that have not been completely volatilized, and the second filter screen then performs fine filtration on the small particles. The chamfering treatment of the screen edge avoids particle jamming and greatly reduces the risk of pipeline blockage. At the same time, the composite channel composed of the inlet pipe, the bidirectional connecting pipe and the outlet pipe, through the combination of the conical contraction, the cylindrical throat and the conical diffusion structure, can not only increase the airflow velocity to disperse small agglomerated particles, but also buffer the airflow impact to reduce turbulence disturbance, and ensure the stability of airflow pressure and velocity. This design not only improves the purity of the precursor gas and avoids the film defects caused by agglomerated particles entering the reaction chamber, but also ensures the stability of airflow transport, reduces the frequency of equipment maintenance caused by pipeline blockage or airflow fluctuation, and further improves the reliability and continuity of the entire device operation.

[0028] The first filter screen has an effective filtration area that occupies half of the cross-sectional area of ​​the bottom of the left cavity. This avoids excessive airflow resistance and reduced carrier gas carrying efficiency caused by an insufficient filtration area, while also intercepting large particles that have not fully evaporated in the left cavity through a reasonable filtration area. At the same time, it reserves flow space for unfiltered airflow, balancing filtration effect and airflow smoothness. The second filter screen has an effective filtration area that occupies two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity. Since the right cavity is focused on pure transport and has a smaller radius, the larger filtration area can maximize the interception of small particles and reduce impurities entering subsequent pipelines. It is also adapted to the smaller space size of the right cavity, ensuring that the airflow is fully filtered in a limited area. This improves gas purity and avoids local blockage caused by insufficient filtration area, ensuring transport stability.

[0029] (4) Regarding the design of the exhaust module in Example 2, its core lies in the efficient adaptation of the solid precursor and the carrier gas through the synergistic structure of "material gravity guidance + carrier gas directional action"; First, the enclosure effect of the annular wall restricts the distribution range of the precursor, preventing it from scattering into the non-carrier gas action area, while the inclined smooth surface of the raised guide surface guides the precursor to slide naturally and converge into the horizontal mesh area by gravity, which reduces the residue of the precursor on the inclined surface and ensures that the material is concentrated in the core area where the carrier gas can directly act; Second, the guide The precise alignment of the through holes on the edge of the disc with the horizontal mesh area allows the carrier gas to act directionally on the material. The channel formed by the outer wall of the annular cylinder and the inner wall of the left cavity can also guide the dispersed airflow to supplement the carrier gas, reducing the waste of carrier gas. At the same time, during the carrying process, the carrier gas not only carries the volatilized precursor molecules but also encapsulates fine particles. Combined with the airflow dispersion effect of the mesh structure, the carrier gas carrying efficiency is further improved. The overall structural design effectively improves the problems of material residue, uneven heating, and insufficient carrier gas effect in the existing technology, ensuring the stability and high efficiency of precursor transportation.

[0030] Most importantly, the circumferentially hollowed-out structure at the contact point between the annular wall and the raised guide surface, through a dynamic balance mechanism of "replenishment-stop-replenishment," ensures that the precursor particles at the outer edge of the raised guide surface maintain a uniform height, thus solving the problem of uneven layer thickness caused by continuous consumption of precursor particles in existing technologies. This design provides a stable and unchanging penetration path and contact interface for the reaction gas flow, ensuring that the contact area and penetration resistance between the gas flow and the precursor particles remain consistent, thereby guaranteeing uniform "thermally induced solid-phase reaction" throughout and avoiding fluctuations in the reaction rate. At the same time, the stable particle layer thickness significantly reduces the difficulty of regulating heat and gas flow, maintaining optimal reaction conditions without frequent parameter adjustments. This not only improves the stability of gaseous product concentration but also reduces precursor waste, providing a stable guarantee for subsequent product collection and use.

[0031] Corresponding to the circumferentially hollowed-out structure, the guide plate with through holes only at the edge forces the carrier gas to diffuse along a fixed path towards the edge and be output directionally. This avoids the local airflow concentration caused by the gas directly penetrating the central area. The channel formed by the outer wall of the annular cylinder further constrains the gas flow direction and reduces airflow turbulence. At the same time, the mesh structure of the raised guide surface can disperse the gas secondaryly, ensuring that the gas is evenly distributed in the horizontal mesh area without any weak or concentrated airflow areas. The raised guide surface guides the precursor to converge in the horizontal mesh area, so that the material is always within the range where the carrier gas can directly act. After the carrier gas is output directionally through the through holes, it directly acts on the material in this area, not only driving the precursor molecules that have been heated and volatilized, but also continuously entraining the fine particles that have not been completely volatilized. With the assistance of the supplementary airflow, the gas and the material always maintain a close and continuous contact state, avoiding the problem of intermittent or incomplete contact between the gas and the material in traditional devices. This ensures that every part of the material can be fully carried by the gas, maximizing the contact efficiency and carrying effect. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the front view of the present invention.

[0033] Figure 2 This is a front-view stereoscopic structural diagram of the present invention.

[0034] Figure 3 This is a three-dimensional structural diagram of the exhaust module of the present invention.

[0035] Figure 4 This is a schematic diagram of the internal planar structure of the left cavity in Embodiment 1 of the present invention.

[0036] Figure 5 This is a schematic diagram of the three-dimensional structure of the output disk in Embodiment 1 of the present invention.

[0037] Figure 6 This is a schematic diagram of the three-dimensional structure of the dispersion disk in Embodiment 1 of the present invention.

[0038] Figure 7 This is a schematic diagram of the planar structure of the guide plate in Embodiment 2 of the present invention.

[0039] Figure 8 This is a schematic diagram of the internal planar structure of the left cavity in Embodiment 2 of the present invention.

[0040] Figure 9 This is a schematic diagram of the flow plane of the carrier gas inside the left cavity in Embodiment 2 of the present invention.

[0041] Figure 10 This is a schematic diagram of the planar structure of the diversion module of the present invention.

[0042] Figure 11 This is a three-dimensional structural diagram of the diversion module of the present invention.

[0043] Figure 12 This is a three-dimensional structural diagram showing the positional relationship between the inlet pipe, the bidirectional connecting pipe, and the outlet pipe of the present invention.

[0044] Figure 13 This is a schematic diagram of the gas flow path inside the diversion module of the present invention.

[0045] The diagram is labeled as follows: 1. Cavity module; 11. Left cavity; 12. Support base; 13. Right cavity.

[0046] 2. Exhaust module; 21. Output plate; 22. Circular hole interface pipe; 23. Dispersion plate; 24. Through circular hole; 25. Inclined guide surface; 26. Guide plate; 27. Annular wall cylinder; 28. Raised guide surface.

[0047] 3. Drainage module; 31. Filter screen one; 32. Inlet pipe; 33. Two-way connecting pipe; 34. Outlet pipe; 35. Filter screen two.

[0048] 4. Carrier gas inlet; 5. Gas outlet. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] Example 1: Please refer to Figure 1 - Figure 3 As shown, the high-efficiency and stable heated solid precursor source bottle includes a cavity module 1, which consists of a left cavity 11 and a right cavity 13. The cavity module 1 is equipped with an exhaust module 2, which allows the input carrier gas to flow in a covering manner, thereby uniformly contacting the solid precursor inside the left cavity 11. The separation structure design, which uses the left cavity 11 for source storage reaction and the right cavity 13 for pure transportation, can effectively reduce the residual amount of solid source, thereby ensuring the high efficiency and stability of solid precursor source transportation.

[0051] It should be noted that the top of the left cavity 11 is connected to the carrier gas inlet 4, serving as the carrier gas input channel, and the top of the right cavity 13 is connected to the gas outlet 5, used for the output of precursor gas. The two cavities are equipped with a receiving base 12 at their bottom, and the receiving base 12 integrates a heating component inside, which provides a stable heating environment for the source storage area of ​​the left cavity 11 and the transport area of ​​the right cavity 13 through heat conduction.

[0052] It should be noted that the left cavity 11 and the right cavity 13 are cylindrical structures with equal heights and a radius ratio of 3:1. The volume of the left cavity 11 is adapted to the storage requirements of the solid precursor, ensuring that the solid precursor can be reasonably accommodated in the cavity. The inner wall of the right cavity 13 is polished, which helps to reduce the resistance of gas flow in the cavity and at the same time reduce the adsorption residue of precursor gas on the cavity wall.

[0053] Please refer to Figure 1 - Figure 6 As shown, the exhaust module 2 includes an output disk 21 assembled inside the left cavity 11. The carrier gas inlet 4 is located directly above the output disk 21, and the surface of the output disk 21 is uniformly perforated with a circular port pipe 22. A dispersion disk 23 is fixedly connected to the center of the left cavity 11. The dispersion disk 23 is made of a heat-conducting material and is thermally connected to the heating component through the side wall of the left cavity 11. The surface of the dispersion disk 23 is uniformly perforated with a through circular hole 24, and the edge of the dispersion disk 23 is designed with an inwardly inclined chamfer. An inclined guide surface 25 is fixedly connected to the bottom wall inside the left cavity 11 to guide the solid precursor source to gather in the center direction and reduce dead corner residue inside the left cavity 11.

[0054] It should be noted that the hole layout of the circular port interface pipe 22 is based on the center of the output disk 21, and is distributed in three concentric circles: inner, middle, and outer. The number of holes increases radially from the inside to the outside, meaning the outer layer has more holes than the middle layer, and the middle layer has more holes than the inner layer. Conversely, the hole diameter decreases radially from the inside to the outside, meaning the inner layer hole diameter is larger than the middle layer hole diameter, and the middle layer hole diameter is larger than the outer layer hole diameter. This radial gradient design, with increasing number of holes and decreasing hole diameter, ensures uniform airflow output through different levels of channels, avoiding the problem of single holes... To address the issue of localized airflow concentration or weakness caused by the diameter or quantity layout, the output disk 21 adopts a concave inclined surface structure with the center as the symmetrical point. Its outline is gently concave from the edge area to the central axis, forming a symmetrical inclined surface layout. However, the gas output end faces of the circular hole interface pipes 22, which are evenly distributed in the inner, middle, and outer layers, remain on the same horizontal plane. Relying on the coplanarity of the interface end faces, the initial height of the airflow output from each layer of circular holes is ensured to be consistent, avoiding airflow disturbance caused by differences in output height, and further ensuring the uniformity and stability of the carrier gas flow.

[0055] Please refer to Figure 1 , Figure 10 - Figure 13As shown, a flow guiding module 3 is installed inside the receiving base 12. The flow guiding module 3 includes a filter screen 31 installed at the center of the inclined flow guiding surface 25. An inlet pipe 32 is connected to the bottom of the filter screen 31. A bidirectional connecting pipe 33 is connected to the bottom of the inlet pipe 32. An outlet pipe 34 is connected to the end of the bidirectional connecting pipe 33 away from the inlet pipe 32. A filter screen 35 is installed above the outlet pipe 34. The filter screen 35 is located at the center of the bottom wall of the right cavity 13.

[0056] It should be noted that the edges of both filter screen 31 and filter screen 35 are chamfered to prevent solid particles from getting stuck. The effective filtration area of ​​filter screen 31 accounts for half of the cross-sectional area of ​​the bottom of the left cavity 11, while the effective filtration area of ​​filter screen 35 accounts for two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity 13. The aperture range of filter screen 31 is 0.5-1mm, while the aperture range of filter screen 35 is within 0.5mm. The inlet pipe 32, the bidirectional connecting pipe 33, and the outlet pipe 34 form a composite channel below filter screen 31 and filter screen 35. Specifically, the inlet pipe 32 is a tapered constriction section at the end, the bidirectional connecting pipe 33 is a cylindrical throat in the middle, and the outlet pipe 34 is a tapered diffusion section at the end.

[0057] Specifically, the pre-treatment operation before the device is put into use is carried out: the top cover of the left cavity 11 is opened, and a solid precursor, such as 50g of trimethylindium, is poured into the left cavity 11. Since there is a dispersion disk 23 with a through hole 24 fixed in the center of the left cavity 11, part of the poured precursor falls directly onto the surface of the dispersion disk 23, and the other part falls into the inclined guide surface 25 on the bottom wall of the left cavity 11 through the through hole 24 of the dispersion disk 23. The precursor falling on the guide surface naturally gathers towards the center area of ​​the cavity under the guidance of the inclined surface, while the precursor falling on the dispersion disk 23 will not accumulate at the edge of the disk due to the inward inclined chamfer design of the edge of the dispersion disk 23, forming a dual distribution state of "dispersion disk 23 support + bottom guide surface aggregation", which effectively avoids the large accumulation of precursor.

[0058] Then, the top cover of the left cavity 11 is closed and sealed to ensure the airtightness of the cavity. At the same time, the heating component inside the receiving base 12 is activated. The heating component conducts heat to the dispersion disk 23 through the side wall of the left cavity 11, so that the precursor in the dispersion disk 23, the internal space of the left cavity 11 and the bottom guide surface are heated synchronously, gradually reaching the temperature suitable for the volatilization of the precursor, and preparing for the subsequent carrier gas to carry the precursor gas. This process, through the diversion effect of the dispersion disk 23 and the source gathering effect of the inclined guide surface 25, combined with the uniform heat conduction of the heating component, not only avoids uneven heating caused by local accumulation of precursor, but also initially improves the utilization rate of precursor, laying the foundation for subsequent stable volatilization.

[0059] After pretreatment, the carrier gas is turned on and enters through the carrier gas inlet 4 at the top of the left cavity 11. Since the carrier gas inlet 4 is located directly above the output disk 21 in the exhaust module 2, the carrier gas acts directly on the output disk 21. The output disk 21 is a symmetrical inclined structure with the edge concave towards the center, and the surface has three concentric circular hole interface pipes 22 distributed in three layers with the center as the reference. The inner layer has the largest diameter and the fewest number of circular holes, while the outer layer has the smallest diameter and the most number of holes. Under the guidance of the concave inclined surface, the carrier gas first converges towards the center and then is evenly output through the three layers of circular hole interface pipes 22. The output end face of each circular hole interface pipe 22 is kept at the same horizontal plane to ensure that the initial height of the carrier gas is consistent when it is output from each channel, without local airflow disturbance, so as to achieve full coverage distribution of the carrier gas inside the left cavity 11.

[0060] When the uniformly output carrier gas flows downward, it first contacts and passes through the through-hole 24 on the surface of the dispersion disk 23. The dispersion disk 23 is made of thermally conductive material and is thermally connected to the heating component, continuously releasing stable heat. During the process of the carrier gas passing through the through-hole 24, on the one hand, it is heated by the dispersion disk 23 to near the precursor volatilization temperature, and on the other hand, the precursor powder gathered below the dispersion disk 23 is blown away by the airflow impact force, so that the precursor is evenly distributed in the storage area of ​​the left cavity 11. At the same time, the carrier gas and the heated and volatilized precursor molecules fully contact and mix to form a stable precursor-carrier gas mixed airflow. This process achieves uniform distribution of carrier gas, uniform dispersion and heating of precursor through the gradient channel design of the output disk 21 and the thermal conduction and diversion effect of the dispersion disk 23, ultimately ensuring the consistency of precursor concentration in the mixed airflow, laying the foundation for subsequent transportation.

[0061] The carrier gas, carrying the precursor gas, continues to flow downwards, first reaching the filter screen 31 at the center of the bottom of the left cavity 11. The effective filtration area of ​​filter screen 31 occupies half of the cross-sectional area of ​​the bottom of the left cavity 11, with an aperture of 0.5–1 mm and chamfered edges. When the mixed airflow passes through the screen, large, incompletely volatilized precursor particles are intercepted, preventing them from entering subsequent pipelines and causing blockages. The chamfered design also prevents particles from getting stuck at the screen edges. The mixed airflow then enters the inlet pipe 32 below filter screen 31. Inlet pipe 32 has a tapered constriction section at the end. The airflow velocity increases within this constriction section due to the reduced cross-section, forming a high-speed airflow. Next, the airflow enters the bidirectional connecting pipe 33—the central cylindrical throat. The high-speed airflow creates strong shear force at the throat, removing any remaining small particles. The agglomerated particles are further dispersed, while the stable cross-section at the throat ensures stable airflow pressure. The airflow then enters the outlet pipe 34—the end-tail conical diffuser section. The slow expansion of the diffuser section gradually reduces the airflow velocity, preventing high-speed airflow from directly impacting the inside of the right cavity 13 and reducing turbulence. Finally, the airflow passes through the filter screen 35 above the outlet pipe 34. The filter screen 35 is located at the center of the bottom wall of the right cavity 13, with an effective filtration area accounting for two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity 13. The pore size is less than 0.5 mm, and the edges are also chamfered, performing secondary fine filtration of the airflow to intercept tiny particles. The filtered pure precursor-carrier gas mixture is briefly stabilized in the right cavity 13 and finally output to the ALD reaction chamber at a stable flow rate through the outlet port 5 at the top of the right cavity 13.

[0062] This process achieves purification and stable transport of the mixed airflow through the graded interception of two-stage filter screens and the regulation of flow rate and pressure in the composite channel. At the same time, the polished inner wall of the right cavity 13 further reduces residues, ensuring the purity and flow rate stability of the gas entering the reaction chamber.

[0063] Example 2: Please refer to Figure 7 - Figure 9 As shown, the exhaust module 2 also includes a guide plate 26 assembled inside the left cavity 11. The outermost edge of the guide plate 26 has through holes evenly distributed. An annular wall cylinder 27 is installed inside the left cavity 11. A raised guide surface 28 is assembled below the annular wall cylinder 27. A circumferential through-hole structure is designed at the contact position between the bottom of the annular wall cylinder 27 and the raised guide surface 28 to facilitate the flow of precursor particles inside the annular wall cylinder 27 into the outer edge of the raised guide surface 28.

[0064] It should be noted that the outer edge of the raised guide surface 28 has a horizontal mesh structure, and the middle has an upwardly sloping raised smooth structure. The annular wall cylinder 27 corresponds to the boundary position between the horizontal plane and the inclined plane of the raised guide surface 28, ensuring that the horizontal plane of the raised guide surface 28 corresponds to the through hole position of the guide plate 26, and the outer wall of the annular wall cylinder 27 and the inner wall of the left cavity 11 form a carrier gas flow channel.

[0065] Specifically, the pretreatment operation before the device is put into use is basically the same as in Example 1. The solid precursor is poured into the left cavity 11. Under the confinement of the annular wall cylinder 27, the precursor can only fall into the annular wall cylinder 27 and contact the inclined smooth area of ​​the raised guide surface 28. Under the influence of gravity, the solid precursor continues to slide downward along the inclined smooth surface and finally converges into the horizontal mesh-like area of ​​the raised guide surface 28, forming a concentrated and uniform material distribution, avoiding the precursor from accumulating on the inclined surface or scattering to the surface. In the non-carrier gas area, the top cover of the left cavity 11 is then closed and sealed to ensure airtightness. The heating component inside the receiving base 12 is then activated. Heat is conducted through the side wall of the left cavity 11 to the annular wall cylinder 27 and the raised guide surface 28, causing the precursor in the horizontal mesh area to heat up synchronously and gradually reach the temperature suitable for volatilization, preparing for the carrier gas to carry the precursor gas. During this process, the thermal conductivity of the raised guide surface 28 ensures that the precursor is heated evenly, while the inclined smooth surface reduces material residue and improves the initial material utilization rate.

[0066] After pretreatment, the carrier gas is turned on. The carrier gas enters through the carrier gas inlet 4 at the top of the left cavity 11 and acts on the guide plate 26. Because the guide plate 26 only has uniform through holes at the outermost edge, the carrier gas cannot penetrate the central area and can only diffuse along the lower surface of the guide plate 26 to the edge, and finally be output in a directional manner through the edge through holes.

[0067] It is worth noting that a circumferentially perforated structure is provided at the contact position between the bottom of the annular wall cylinder 27 and the raised guide surface 28. This structure provides a channel for the precursor particles inside the annular wall cylinder 27 to flow towards the outer edge of the raised guide surface 28. When the precursor particles inside the annular wall cylinder 27 move towards the perforated structure under the action of gravity, if the height of the precursor particles at the outer edge of the raised guide surface 28 does not exceed the upper edge of the perforated structure, the particles can smoothly flow into the outer edge area through the perforated structure. Once the height of the particles at the outer edge reaches or exceeds the upper edge of the perforated structure, the flow resistance of the particles will be significantly increased. The flow increases and then stops. When the precursor particles at the outer edge are consumed by the carrier gas and volatilization, and the particle height is lower than the upper edge of the hollow structure, the hollow structure will reopen. The precursor particles in the annular wall cylinder 27 will then be replenished to the outer edge area of ​​the raised guide surface 28 under the action of gravity. Through this dynamic balance of "replenishment-stop-replenishment", the precursor particles at the outer edge of the raised guide surface 28 can maintain a relatively uniform height, so that the carrier gas can maintain a uniform reaction when passing through this position, and finally uniformly output the reaction products.

[0068] Because the through holes on the edge of the guide plate 26 precisely correspond to the horizontal mesh area of ​​the raised guide surface 28, the carrier gas directly acts on this area: on the one hand, it drives the precursor molecules that have been heated and volatilized to form a mixed airflow; on the other hand, it uses the impact force of the airflow to carry some of the fine precursor particles that have not been completely volatilized, and they flow downward along the horizontal mesh surface together. At the same time, the mesh structure of the raised guide surface 28 further disperses the airflow, avoiding the problem of material scattering or insufficient contact caused by local airflow concentration. In addition, the carrier gas flow channel formed by the outer wall of the annular wall cylinder 27 and the inner wall of the left cavity 11 can guide a small amount of dispersed airflow to supplement downward along the channel, further enhancing the carrying effect on the material in the horizontal mesh area. The uniform height of the precursor particles on the outer edge of the raised guide surface 28 can ensure that the carrier gas is always in contact with the precursor particles of consistent thickness when flowing through this area, avoiding excessively strong or weak local contact due to uneven particle height, and finally forming a precursor-carrier gas mixed airflow with stable composition and concentration.

[0069] The subsequent flow process of the carrier gas carrying the precursor gas is consistent with that in Example 1: the mixed airflow first reaches the filter screen 31 at the bottom center of the left cavity 11. The screen, with an aperture of 0.5~1mm and an effective filtration area accounting for half of the cross-sectional area of ​​the bottom of the left cavity 11, intercepts large particles that have not been completely volatilized. The chamfered edge design prevents particles from getting stuck. Then the airflow enters the conical contraction section of the inlet pipe 32. The reduced cross-section increases the flow velocity, forming a high-speed airflow. Next, it enters the cylindrical throat of the bidirectional connecting pipe 33. The strong shear force generated by the high-speed airflow disperses the residual small agglomerated particles, and the stable cross-section ensures stable airflow pressure. Then it enters the conical diffusion section of the outlet pipe 34. The flow velocity slowly decreases to avoid impacting the right cavity 13. Finally, it passes through the filter screen 35 with an aperture of less than 0.5mm and an effective filtration area accounting for two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity 13 to complete secondary fine filtration. After the pure mixed airflow is briefly stabilized in the right cavity 13, it is output to the ALD reaction chamber at a stable flow rate through the top outlet port 5.

[0070] The core of the structural design of the exhaust module 2 in Example 2 lies in conforming to the synergistic logic of "material gravity flow + carrier gas directional carrying": the inclined smooth surface of the raised guide surface 28 uses gravity to guide the precursor to naturally converge to the horizontal mesh area, ensuring that the material is precisely within the range of the carrier gas; the precise alignment of the edge through holes of the guide plate 26 with the horizontal mesh area allows the carrier gas to directly act on the converged material, maximizing the carrier gas carrying efficiency; at the same time, the inclined smooth surface reduces material residue, the horizontal mesh surface assists in airflow dispersion, and with the containment effect of the annular wall cylinder 27, effectively avoids material scattering and disordered airflow, ultimately achieving orderly flow of solid precursor and efficient carrying of carrier gas, ensuring the stability and utilization rate of precursor transportation.

[0071] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-efficiency and stable heating solid precursor source bottle, comprising a cavity module (1), characterized in that: The cavity module (1) consists of a left cavity (11) and a right cavity (13), and the cavity module (1) is equipped with an exhaust module (2). The exhaust module (2) allows the input carrier gas to flow in a covered manner, forming a separate structure design in which the left cavity (11) performs source storage reaction and the right cavity (13) performs pure transportation.

2. The high-efficiency and stable heating solid precursor source bottle according to claim 1, characterized in that: The top of the left cavity (11) is connected to the carrier gas inlet (4) as a carrier gas input channel, and the top of the right cavity (13) is connected to the gas outlet (5) for the output of precursor gas. The two cavities are equipped with a receiving base (12) below them, and the receiving base (12) integrates a heating component inside, which provides a stable heating environment for the storage area of ​​the left cavity (11) and the transport area of ​​the right cavity (13) through heat conduction. The left cavity (11) and the right cavity (13) are cylindrical structures with equal heights and a radius ratio of three to one. The volume of the left cavity (11) is adapted to the storage requirements of the solid precursor, providing a reasonable space for the solid precursor. The inner wall of the right cavity (13) is polished to constrain the precursor gas adsorption cavity wall.

3. The high-efficiency and stable heating solid precursor source bottle according to claim 2, characterized in that: The exhaust module (2) includes an output plate (21) assembled inside the left cavity (11). The carrier gas inlet (4) is located directly above the output plate (21). The surface of the output plate (21) is uniformly perforated with a circular hole interface pipe (22). The hole layout of the circular hole interface pipe (22) is based on the center of the output plate (21) and is distributed in three concentric circles: inner, middle and outer. The number of holes increases radially from the inside to the outside, that is, the number of holes in the outer layer is greater than that in the middle layer, and the number of holes in the middle layer is greater than that in the inner layer. In contrast, the hole diameter decreases radially from the inside to the outside, that is, the hole diameter in the inner layer is larger than that in the middle layer, and the hole diameter in the middle layer is larger than that in the outer layer.

4. The high-efficiency and stable heating solid precursor source bottle according to claim 3, characterized in that: The output disk (21) adopts a concave inclined structure with the center as the symmetrical point. Its outline is gently concave from the edge area to the central axis, forming a symmetrical inclined layout. However, the gas output end face of the round hole interface pipe (22) evenly distributed in the inner, middle and outer layers is kept on the same horizontal plane. The coplanarity of the interface end face ensures that the initial height of the gas flow output from each layer of round holes is consistent.

5. The high-efficiency and stable heating solid precursor source bottle according to claim 1, characterized in that: The exhaust module (2) also includes a guide plate (26) assembled inside the left cavity (11). The outermost edge of the guide plate (26) is uniformly provided with through holes. An annular wall cylinder (27) is installed inside the left cavity (11). A raised guide surface (28) is assembled below the annular wall cylinder (27). A circumferential through-hole structure is designed at the bottom of the annular wall cylinder (27) and the contact position of the raised guide surface (28) to facilitate the flow of precursor particles inside the annular wall cylinder (27) into the outer edge of the raised guide surface (28).

6. The high-efficiency and stable heating solid precursor source bottle according to claim 5, characterized in that: The outer edge of the raised guide surface (28) has a horizontal mesh structure, and the middle has an upwardly convex smooth structure. The annular wall cylinder (27) corresponds to the boundary position between the horizontal plane and the inclined plane of the raised guide surface (28), ensuring that the horizontal plane of the raised guide surface (28) corresponds to the through hole position of the guide plate (26), and the outer wall of the annular wall cylinder (27) and the inner wall of the left cavity (11) form a carrier gas flow channel.

7. The high-efficiency and stable heating solid precursor source bottle according to claim 1, characterized in that: A dispersion disk (23) is fixedly connected to the center of the left cavity (11). The dispersion disk (23) is made of thermally conductive material and is thermally connected to the heating component through the side wall of the left cavity (11). The surface of the dispersion disk (23) is uniformly provided with through circular holes (24), and the edge of the dispersion disk (23) is designed with an inwardly inclined chamfer. An inclined guide surface (25) is fixedly connected to the bottom wall of the left cavity (11) to guide the solid precursor source to gather towards the center of the bottom of the left cavity (11).

8. The high-efficiency and stable heating solid precursor source bottle according to claim 2, characterized in that: The receiving base (12) is equipped with a flow guiding module (3). The flow guiding module (3) includes a filter screen (31) installed at the center of the inclined flow guiding surface (25). The filter screen (31) is connected to an inlet pipe (32) below it. The inlet pipe (32) is connected to a bidirectional connecting pipe (33) below it. The bidirectional connecting pipe (33) is connected to an outlet pipe (34) at the end away from the inlet pipe (32). The outlet pipe (34) is equipped with a filter screen (35) above it. The filter screen (35) is located at the center of the bottom wall of the right cavity (13).

9. The high-efficiency and stable heating solid precursor source bottle according to claim 8, characterized in that: The edges of both the first filter screen (31) and the second filter screen (35) are chamfered to prevent solid particles from getting stuck. The effective filtration area of ​​the first filter screen (31) accounts for half of the cross-sectional area of ​​the bottom of the left cavity (11), while the effective filtration area of ​​the second filter screen (35) accounts for two-thirds of the cross-sectional area of ​​the bottom wall of the right cavity (13). The aperture range of the first filter screen (31) is 0.5 to 1 mm, while the aperture range of the second filter screen (35) is less than 0.5 mm.

10. The high-efficiency and stable heating solid precursor source bottle according to claim 8, characterized in that: The inlet pipe (32), the bidirectional connecting pipe (33), and the outlet pipe (34) form a composite channel between the filter screen one (31) and the filter screen two (35). Specifically, the inlet pipe (32) is a tapered constriction section at the end, the bidirectional connecting pipe (33) is a cylindrical throat in the middle, and the outlet pipe (34) is a tapered diffusion section at the end.

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