Image sensor

Abstract

The invention provides an image sensor. The image sensor includes a unit. The unit comprises a phase detection autofocus pixel, a plurality of sensing pixels and a shading grid. The phase detection autofocus pixel is on the substrate, wherein the phase detection autofocus pixel includes four photodiodes and a first color filter layer on the four photodiodes. The sensing pixels are on the substrate and around the phase detection autofocus pixel, wherein each of the sensing pixels includes a single photodiode and a second color filter layer on the single photodiode. The shading grid surrounds the first color filter layer and comprises a first part and a second part, the first part is closer to the center of the substrate than the second part, and the width of the first part is larger than that of the second part from the overlook view. According to the image sensor, the sensitivity of phase detection automatic focusing pixels is improved, and detection crosstalk between sensing pixels is reduced.

Description

Technical Field

[0001] This disclosure relates to an image sensor. Background Technology

[0002] Phase detection autofocus (PDAF) pixels are used in image sensors, such as charge-coupled devices (CCDs) and complementary metal-oxide-semiconductor (CMOS) sensors, to perform autofocus. However, while a smaller radius of curvature on the microlens of the PDAF pixel may increase its sensitivity, it can also increase unwanted crosstalk between sensing pixels near the PDAF pixel. Specifically, a smaller radius of curvature microlens may occupy less space on the PDAF pixel, allowing more light (e.g., light with a larger angle of incidence) to enter the sensing pixels adjacent to the PDAF pixel without being blocked. Once more light enters the sensing pixels adjacent to the PDAF pixel, the light received by these pixels may differ significantly from that received by sensing pixels farther away, causing detection crosstalk. Therefore, it is necessary to develop an image sensor that enables phase detection autofocus pixels to have higher sensitivity and reduces crosstalk between sensing pixels. Summary of the Invention

[0003] This disclosure provides an image sensor. The image sensor includes a unit. The unit includes a phase detection autofocus pixel, a plurality of sensing pixels, and a light-shielding grid. The phase detection autofocus pixel is on a substrate, wherein the phase detection autofocus pixel includes four photodiodes and a first color filter layer on the four photodiodes. The sensing pixels are on the substrate and surround the phase detection autofocus pixel, wherein each of the sensing pixels includes a single photodiode and a second color filter layer on the single photodiode. The light-shielding grid surrounds the first color filter layer, wherein the light-shielding grid includes a first portion and a second portion, the first portion being closer to the center of the substrate than the second portion, and the width of the first portion being greater than the width of the second portion when viewed from top.

[0004] In some embodiments, viewed from above, the substrate has a positive X-axis extending from the center of the substrate to the right edge of the substrate, the cells are located on the positive X-axis, and a first portion of the light-shielding mesh is on the left side of the first color filter layer.

[0005] In some embodiments, the image sensor further includes a light-absorbing grid of a second color filter layer surrounding one of the sensing pixels in the cell, wherein the sensing pixel is located to the right of the phase detection autofocus pixel when viewed from above, the light-absorbing grid including a first portion and a second portion, the first portion of the light-absorbing grid being located to the right of the sensing pixel, and the width of the first portion of the light-absorbing grid being greater than the width of the second portion of the light-absorbing grid.

[0006] In some embodiments, viewed from above, the substrate has a negative X-axis extending from the center of the substrate to the left edge of the substrate, the cells are located on the negative X-axis, and a first portion of the light-shielding mesh is to the right of the first color filter layer.

[0007] In some embodiments, the image sensor further includes a light-absorbing grid of a second color filter layer surrounding one of the sensing pixels in the cell, wherein the sensing pixel is located to the left of the phase detection autofocus pixel when viewed from above, the light-absorbing grid including a first portion and a second portion, the first portion of the light-absorbing grid being located to the left of the sensing pixel, and the width of the first portion of the light-absorbing grid being greater than the width of the second portion of the light-absorbing grid.

[0008] In some embodiments, viewed from above, the substrate has a positive Y-axis extending from the center of the substrate to the upper edge of the substrate, the cells are located on the positive Y-axis, and a first portion of the light-shielding mesh is located below the first color filter layer.

[0009] In some embodiments, the image sensor further includes a light-absorbing grid of a second color filter layer surrounding one of the sensing pixels in the cell, wherein the sensing pixel is located above the phase detection autofocus pixel when viewed from above, the light-absorbing grid including a first portion and a second portion, the first portion of the light-absorbing grid being located above the sensing pixel, and the width of the first portion of the light-absorbing grid being greater than the width of the second portion of the light-absorbing grid.

[0010] In some embodiments, viewed from above, the substrate has a negative Y-axis extending from the center of the substrate to the lower edge of the substrate, the cells are located on the negative Y-axis, and a first portion of the light-shielding mesh is on the upper side of the first color filter layer.

[0011] In some embodiments, the image sensor further includes a light-absorbing grid of a second color filter layer surrounding one of the sensing pixels in the cell, wherein the sensing pixel is located below the phase detection autofocus pixel when viewed from above, and the light-absorbing grid includes a first portion and a second portion, the first portion of the light-absorbing grid being located below the sensing pixel, and the width of the first portion of the light-absorbing grid being greater than the width of the second portion of the light-absorbing grid.

[0012] In some embodiments, viewed from above, the substrate has an upper right region between the positive X-axis and the positive Y-axis, the positive X-axis and the positive Y-axis extending from the center of the substrate to the right edge and the upper edge of the substrate, respectively, the cell is located in the upper right region, and the first portion of the light-shielding mesh is on the left and under the first color filter layer.

[0013] In some embodiments, the image sensor further includes: a first light-absorbing grid surrounding a second color filter layer of one of the sensing pixels in the cell; and a second light-absorbing grid surrounding a second color filter layer of the other of the sensing pixels in the cell, wherein: the sensing pixel is located to the right of the phase detection autofocus pixel when viewed from above, the first light-absorbing grid includes a first portion and a second portion, the first portion of the first light-absorbing grid is located to the right of the sensing pixel, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid; and the other sensing pixel is located above the phase detection autofocus pixel when viewed from above, the second light-absorbing grid includes a first portion and a second portion, the first portion of the second light-absorbing grid is located above the other sensing pixel, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

[0014] In some embodiments, viewed from above, the substrate has an upper left region between the negative X-axis and the positive Y-axis, the negative X-axis and the positive Y-axis extending from the center of the substrate to the left edge and the upper edge of the substrate, respectively, the cell is located in the upper left region, and the first portion of the light-shielding mesh is located to the right and below the first color filter layer.

[0015] In some embodiments, the image sensor further includes: a first light-absorbing grid surrounding a second color filter layer of one of the sensing pixels in the cell; and a second light-absorbing grid surrounding a second color filter layer of the other of the sensing pixels in the cell, wherein: the sensing pixel is located to the left of the phase detection autofocus pixel when viewed from above, the first light-absorbing grid includes a first portion and a second portion, the first portion of the first light-absorbing grid is located to the left of the sensing pixel, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid; and the other sensing pixel is located above the phase detection autofocus pixel when viewed from above, the second light-absorbing grid includes a first portion and a second portion, the first portion of the second light-absorbing grid is located above the other sensing pixel, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

[0016] In some embodiments, viewed from above, the substrate has a lower left region between the negative X-axis and the negative Y-axis, the negative X-axis and the negative Y-axis extending from the center of the substrate to the left edge and the lower edge of the substrate, respectively, the cell is located in the lower left region, and the first portion of the light-shielding mesh is on the right and top side of the first color filter layer.

[0017] In some embodiments, the image sensor further includes: a first light-absorbing grid surrounding a second color filter layer of one of the sensing pixels in the cell; and a second light-absorbing grid surrounding a second color filter layer of the other of the sensing pixels in the cell, wherein: the sensing pixel is located to the left of the phase detection autofocus pixel when viewed from above, the first light-absorbing grid includes a first portion and a second portion, the first portion of the first light-absorbing grid is located to the left of the sensing pixel, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid; and the other sensing pixel is located below the phase detection autofocus pixel when viewed from above, the second light-absorbing grid includes a first portion and a second portion, the first portion of the second light-absorbing grid is located below the other sensing pixel, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

[0018] In some embodiments, viewed from above, the substrate has a lower right region between the positive X-axis and the negative Y-axis, the positive X-axis and the negative Y-axis extending from the center of the substrate to the right edge and the lower edge of the substrate, respectively, the cell is located in the lower right region, and the first portion of the light-shielding mesh is on the left and upper sides of the first color filter layer.

[0019] In some embodiments, the image sensor further includes: a first light-absorbing grid surrounding a second color filter layer of one of the sensing pixels in the cell; and a second light-absorbing grid surrounding a second color filter layer of the other of the sensing pixels in the cell, wherein: the sensing pixel is located to the right of the phase detection autofocus pixel when viewed from above, the first light-absorbing grid includes a first portion and a second portion, the first portion of the first light-absorbing grid is located to the right of the sensing pixel, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid; and the other sensing pixel is located below the phase detection autofocus pixel when viewed from above, the second light-absorbing grid includes a first portion and a second portion, the first portion of the second light-absorbing grid is located below the other of the sensing pixel, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

[0020] In some embodiments, the image sensor further includes a plurality of light-absorbing grids, each surrounding a second color filter layer of a sensing pixel within a cell. Viewed from top, the light-absorbing grid includes multiple portions located on one side of the phase-detection autofocus pixel, adjacent to a first portion of a light-shielding grid relative to the phase-detection autofocus pixel. The width of the first portion of the light-shielding grid and the multiple widths of the portions of the light-absorbing grid are equal to W0 + (E0 + ND * E). MAX W0 is 50nm to 150nm, E0 is 0 to 1 / 4 times the length of one of the four photodiodes in the phase detection autofocus pixel, and EMAX ND is 0 to 1 / 3 times the length, and ND equals D / D MAX D is the distance between the center of the substrate and the center of the cell, and D MAX It is the distance between the center of the substrate and the edge of the substrate that is farthest from the center of the substrate.

[0021] In some implementations, viewed from above, the connecting line is defined as connecting the center of the substrate and the center of the cell, with an included angle. Located between the connecting line and the positive X-axis of the substrate, which extends from the center of the substrate to its right edge, the first part of the light-shielding mesh includes a first width and a second width, the first width being equal to... The second width equals W0 is 50nm to 150nm, E0 is 0 to 1 / 4 times the length of one of the four photodiodes of the phase detection autofocus pixel, and E MAX ND is 0 to 1 / 3 times the length, and ND equals D / D MAX D is the distance between the center of the substrate and the center of the cell, and D MAX It is the distance between the center of the substrate and the edge of the substrate that is farthest from the center of the substrate.

[0022] In some embodiments, the image sensor further includes a plurality of light-absorbing grids, each surrounding a second color filter layer of a sensing pixel in a unit. Viewed from top, the light-absorbing grid includes: a plurality of first portions located on a first side of the phase-detection autofocus pixel; and a plurality of second portions located on a second side of the phase-detection autofocus pixel. The first side is adjacent to a first width of the first portion of the light-absorbing grid relative to the phase-detection autofocus pixel, and the second side is adjacent to a second width of the first portion of the light-absorbing grid relative to the phase-detection autofocus pixel. The plurality of widths of the first portions of the light-absorbing grid are equal to... And the width of multiple parts of the second part of the light-absorbing grid is equal to Attached Figure Description

[0023] The present disclosure can be more fully understood by referring to the following figures when reading the detailed description of the embodiments below.

[0024] Figure 1 and Figure 2 These are cross-sectional views and top perspective views of an image sensor according to some embodiments of the present disclosure, wherein the first portion of the light-shielding grid is wider than the second portion of the light-shielding grid.

[0025] Figure 3 yes Figure 2 An enlarged view of the unit on the positive X-axis.

[0026] Figure 4 and Figure 5 These are cross-sectional views and top perspective views of an image sensor according to some embodiments of the present disclosure, wherein a first portion of the light-absorbing grid is wider than a second portion of the light-absorbing grid.

[0027] Figure 6 yes Figure 5 An enlarged view of the unit on the positive X-axis.

[0028] Figure 7 and Figure 8 These are cross-sectional views and top perspective views of an image sensor according to some embodiments of the present disclosure, wherein a first portion of the light-shielding grid is wider than a second portion of the light-shielding grid, and a first portion of the light-absorbing grid is wider than a second portion of the light-absorbing grid.

[0029] Figure 9 yes Figure 8 An enlarged view of the unit on the positive X-axis.

[0030] Figures 10 to 13 This is a cross-sectional view of an image sensor formed according to some embodiments of the present disclosure.

[0031] The reference numerals in the attached figures are explained as follows:

[0032] 10, 10C, 10LL, 10LR, 10NX, 10NY, 10PX, 10PX', 10PY, 10UL,

[0033] 10UR: Unit

[0034] 11, 12, 13: Light

[0035] 101: Substrate

[0036] 101I: Isolation Zone

[0037] 102: Intermediate Layer

[0038] 103: Transparent Mesh

[0039] 103', 203', 303': Materials

[0040] 103I, 203I: Inner enclosure side

[0041] 103O, 203O: Outer Enclosure Side

[0042] 103S, 303S: Side

[0043] 104: Anti-reflective coating

[0044] 200: Phase detection autofocus pixels

[0045] 201: Four photodiodes

[0046] 201L, 301L: Length

[0047] 202: First color filter layer

[0048] 203: Shading mesh

[0049] 204: First microlens

[0050] 204E, CE: Edge

[0051] 300: Sensing pixels

[0052] 301: Single photodiode

[0053] 302: Second color filter layer

[0054] 303: Light-absorbing mesh

[0055] 304: Second microlens

[0056] AA, BB, CC: lines

[0057] C1, C2: Center

[0058] CL: Connecting cable

[0059] D、D MAX :distance

[0060] LL: Lower left region

[0061] LR: Bottom right area

[0062] NX: Negative X-axis

[0063] NY: Negative Y-axis

[0064] P1, P3: Part One

[0065] P2, P4: Part Two

[0066] PR1, PR2: Hard mask layers

[0067] included angle

[0068] PX: Positive X-axis

[0069] PY: Positive Y-axis

[0070] UL: Top left area

[0071] UR: Upper right area

[0072] W1, W2, W3, W4: Width Detailed Implementation

[0073] To make the description of this disclosure more detailed and complete, various aspects of this disclosure are described below through implementation methods and specific embodiments. This disclosure does not limit the implementation to only one form. The implementation methods of this disclosure may be combined or substituted with each other where advantageous, and other implementation methods may be added without further description.

[0074] In this disclosure, spatial relative terms, such as "up" and "down," may be used to describe the relationship between one element or feature and another element or feature in the figure. In addition to the directions depicted in the figures, spatial relative terms are intended to cover different orientations of the device during use or operation. For example, the device may be oriented in other ways, such as at 90 degrees or other orientations. Therefore, the spatial relative terms in this disclosure can be interpreted accordingly. Furthermore, in this disclosure, unless otherwise stated, identical or similar reference numerals in different figures refer to identical or similar elements formed from identical or similar materials by identical or similar methods.

[0075] This disclosure provides an image sensor, such as Figure 2 , Figure 5 and Figure 8 As shown, where Figure 1 , Figure 4 and Figure 7 The cross-sectional views are respectively from Figure 2 , Figure 5 and Figure 8 The image sensor is captured by lines AA, BB, and CC in the top perspective view. The image sensor includes at least unit 10. Unit 10 includes a phase detection autofocus pixel (PDAF pixel) 200 on a substrate 101 and a plurality of sensing pixels 300 surrounding the PDAF pixel 200. The PDAF pixel 200 includes four photodiodes 201 and a first color filter layer 202 on the four photodiodes 201, and each of the sensing pixels 300 includes a single photodiode 301 and a second color filter layer 302 on the single photodiode 301. This disclosure describes the image sensor through the following detailed embodiments.

[0076] In some embodiments, substrate 101 is a semiconductor substrate and comprises any suitable semiconductor material. In some embodiments, substrate 101 includes an isolation region 101I, and each of the four photodiodes 201 and the single photodiode 301 is separated by the isolation region 101I. In some embodiments, isolation region 101I comprises any suitable electrically insulating material. In some embodiments, the electrically insulating material includes silicon dioxide, SiON, SiCN, etc., or combinations thereof. In some embodiments, an intermediate layer 102 is located on substrate 101, between the four photodiodes 201 and the first color filter layer 202, and between the single photodiode 301 and the second color filter layer 302. In some embodiments, intermediate layer 102 is a dielectric layer and comprises any suitable dielectric material. In some embodiments, the dielectric material includes HfO2, HfTaO, HfTiO, HfZrO, Ta2O5, SiO2, Si3N4, SiON, etc., or combinations thereof.

[0077] In some embodiments, four photodiodes 201 and a single photodiode 301 are embedded in the substrate 101. In some embodiments, the photodiodes in the four photodiodes 201 and the single photodiode 301 are of the same type and are used to sense light of the same wavelength within the same unit 10. In some embodiments, the photodiodes in the four photodiodes 201 and the single photodiode 301 can sense red light, green light, blue light, cyan light, magenta light, yellow light, white light, infrared light, or combinations thereof. In some embodiments, a first color filter layer 202 extends continuously over the four photodiodes 201, and a second color filter layer 302 extends continuously over the single photodiode 301. In some embodiments, the four photodiodes 201 are arranged in a 2x2 array on the substrate 101.

[0078] In some embodiments, the first color filter layer 202 is configured to filter wavelengths of light that are sensitive to the four photodiodes 201 disposed beneath it, allowing light with wavelengths sensitive to the four photodiodes 201 to pass through the first color filter layer 202 and enter the four photodiodes 201, while wavelengths of light that are not sensitive to the four photodiodes 201 cannot pass through the first color filter layer 202 and enter the four photodiodes 201. In some embodiments, the second color filter layer 302 is configured to filter wavelengths of light that are sensitive to the individual photodiode 301 disposed beneath it, allowing light with wavelengths sensitive to the individual photodiode 301 to pass through the second color filter layer 302 and enter the individual photodiode 301, while wavelengths of light that are not sensitive to the individual photodiode 301 cannot pass through the second color filter layer 302 and enter the individual photodiode 301. In some embodiments, the first color filter layer 202 and the second color filter layer 302 can filter red light, green light, blue light, cyan light, magenta light, yellow light, white light, infrared light, or combinations thereof.

[0079] In some embodiments, unit 10 includes a light-shielding mesh 203 surrounding a first color filter layer 202 and a plurality of light-absorbing meshes 303 each surrounding a second color filter layer 302. In some embodiments, the light-shielding mesh 203 and the light-absorbing meshes 303 are a single unit made of the same material. The term "light-shielding mesh" as used in this disclosure is used to better describe a portion of the unit surrounding the first color filter layer 202, while the term "light-absorbing mesh" is used to better describe a portion of the unit surrounding the second color filter layer 302. In some embodiments, the light-shielding mesh 203 includes a first portion P1 and a second portion P2, which together surround the first color filter layer 202. The first portion P1 is the portion facing the center C1 of the substrate 101, and the width W1 of the first portion P1 is greater than the width W2 of the second portion P2, such as... Figures 1 to 2 and Figures 7 to 8 As shown. In some embodiments, the light-absorbing mesh 303 includes a first portion P3 and a second portion P4, which together surround the second color filter layer 302, and the width W3 of the first portion P3 is greater than the width W4 of the second portion P4, as shown. Figures 4 to 5 and Figures 7 to 8 As shown. In some embodiments, a sensing pixel 300 with a first portion P3 of a light-absorbing grid 303 surrounding it being wider than a second portion P4 is disposed on one side of the phase detection autofocus pixel 200, and this side is opposite to one side of the first portion P1 of the adjacent light-blocking grid 203 of the phase detection autofocus pixel 200, as shown. Figure 8As shown. In some embodiments, the projection of the first portion P1 on the substrate 101 has a larger overlap area with the projections of the four photodiodes 201 on the substrate 101 compared to the projection of the second portion P2 on the substrate 101. In some embodiments, the projection of the first portion P3 on the substrate 101 has a larger overlap area with the projection of the single photodiode 301 on the substrate 101 compared to the projection of the second portion P4 on the substrate 101.

[0080] The first part P1 of the light-blocking mesh 203 improves the sensitivity of the phase-detection autofocus pixel 200 by blocking light 11 from entering the phase-detection autofocus pixel 200 (see reference). Figure 1 and Figure 7 When this light has a large angle of incidence and is considered to be leaking light from the surrounding sensing pixels 300, the first portion P3 of the light-absorbing grid 303 reduces detection crosstalk between sensing pixels 300 by blocking light 12 from entering the sensing pixels 300 near the phase-detection autofocus pixel 200 (see reference). Figure 4 and Figure 7 When this light has a large angle of incidence and is considered to be leaking light from the phase detection autofocus pixel 200, the amount of light received by the sensing pixel 300 near the phase detection autofocus pixel 200 and the amount of light received by the sensing pixel 300 far from the phase detection autofocus pixel 200 may not differ significantly, thus causing detection crosstalk. In some embodiments, the materials of the light-shielding mesh 203 and the light-absorbing mesh 303 are translucent and absorb light. In some embodiments, the transmittance of the materials of the light-shielding mesh 203 and the light-absorbing mesh 303 is less than 50%. In some embodiments, the materials of the light-shielding mesh 203 and the light-absorbing mesh 303 include titanium nitride. In some embodiments, the height of the light-shielding mesh 203 in cross-section is 10 nm to 150 nm, for example, 10 nm, 50 nm, 100 nm, or 150 nm. In some embodiments, the height of the light-absorbing mesh 303 in cross-section is 10 nm to 150 nm, for example, 10 nm, 50 nm, 100 nm, or 150 nm. In some embodiments, the height of the light-blocking grid 203 and the height of the light-absorbing grid 303 are the same when viewed in cross-section.

[0081] In some embodiments, depending on the position of unit 10 on substrate 101, the first portion P1 of the light-shielding mesh 203 can be disposed on different sides of the first color filter layer 202 to handle light 13 with a large incident angle illuminating different positions of substrate 101, such as... Figure 2 and Figure 8As shown. In some embodiments, depending on the position of unit 10 on substrate 101, the first portion P3 of light-absorbing mesh 303 can be disposed on different sides of the second color filter layer 302 to handle light 13 with a large incident angle illuminating different positions of substrate 101, such as... Figure 5 and Figure 8 As shown. It should be noted that, Figure 8 The implementation method is Figure 2 Implementation methods and Figure 5 The combination of implementation methods, therefore, for the sake of the simplicity of the diagram, Figure 8 Some symbols may not be drawn repeatedly. Furthermore, for a better understanding of this disclosure, in Figure 2 , Figure 5 and Figure 8 In this context, substrate 101 is defined as having a positive X-axis PX, a negative X-axis NX, a positive Y-axis PY, and a negative Y-axis NY. The positive X-axis PX, negative X-axis NX, positive Y-axis PY, and negative Y-axis NY extend from the center C1 of substrate 101 to the right edge, left edge, top edge, and bottom edge of substrate 101, respectively. Connecting line CL is defined as connecting the center C2 of connecting unit 10 and the center C1 of substrate 101, such that the angle between connecting line CL and positive X-axis PX is... It can be used to define the position of unit 10 on substrate 101.

[0082] Besides the fact that the position of unit 10 on substrate 101 may affect the position of the first portion P1 and / or the first portion P3 on substrate 101, in some embodiments, the position of unit 10 on substrate 101 may also affect the width W1 of the first portion P1 and / or the width W3 of the first portion P3. In some embodiments, depending on the position of unit 10 on substrate 101, the width W1 of the first portion P1 can be W0 + (E0 + ND * E MAX ), or This will be discussed further below. In some embodiments, when the width W1 of the first portion P1 falls within the aforementioned range, the sensitivity of the phase detection autofocus pixel 200 increases by 0.04 for every 10nm increase in the width W1 of the first portion P1. In some embodiments, depending on the position of the unit 10 on the substrate 101, the width W3 of the first portion P3 can be W0 + (E0 + ND * E MAX ), or This will be discussed further below. In some embodiments, when the width W3 of the first portion P3 falls within the aforementioned range, the detection crosstalk between the sensing pixels 300 decreases by 3.7% for every 10nm increase in the width W3 of the first portion P3. In some embodiments, the width W2 of the second portion P2 is equal to W0. In some embodiments, the width W4 of the second portion P4 is equal to W0. In some embodiments, W0 is 50nm to 150nm. In some embodiments, E0 is 0 to 1 / 4 times the length 201L of any one of the four photodiodes 201, and E... MAX The length 201L is 0 to 1 / 3 times that of the length 201L. In some embodiments, the length 201L of each of the four photodiodes 201 is the same. In some embodiments, the length 201L is 500 nm to 1000 nm, for example, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm. In some embodiments, E0 is 0 to 1 / 4 times the length 301L of a single photodiode 301, and E... MAX The length is 0 to 1 / 3 times that of 301L. In some embodiments, the length 301L is equal to the length 201L. In some embodiments, the length 301L is 500nm to 1000nm, for example, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm. In some embodiments, WO is the same in different units of the same image sensor, E0 is the same in different units of the same image sensor, and E... MAX It is the same in different units within the same image sensor. In some implementations, ND equals D / D. MAX D is the distance between the center C2 of unit 10 and the center C1 of substrate 101 (for example, the distance D marked for unit 10UR in the figure, but for simplicity, the distance D is not marked for other units such as unit 10PX in the figure), and D MAX The distance between the edge of substrate 101 furthest from the center C1 of substrate 101 and the center C1 of substrate 101 (e.g., the distance D marked in the figure). MAX ND scales the distance between unit 10 and the center C1 of substrate 101 to a range of 0 to 1. For example, when unit 10 is located at the center C1 of substrate 101, ND is 0, and when unit 10 is located at the edge of substrate 101 furthest from the center C1, ND is 1. Therefore, the included angle The ND symbol describes the position of cell 10 on substrate 101 and the included angle. And ND affects the width W1 of the first part P1 and the width W3 of the first part P3.

[0083] Next, the positions of the units 10 on the substrate 101, the corresponding positions of the first portion P1 and / or the first portion P3, and the widths W1 and W3 corresponding to the first portion P1 and / or the first portion P3 are described in detail below. In some embodiments, the number of units 10 on the substrate 101 is not limited, except that in some embodiments, the ratio of the number of phase detection autofocus pixels 200 to the number of sensing pixels 300 in the image sensor is preferably 0.50% to 1.65%, for example 0.50%, 0.80%, 1.00%, 1.25%, or 1.65%, so as to have a sufficient number of phase detection autofocus pixels 200 to perform autofocus, and a sufficient number of sensing pixels 300 to improve sensing resolution. In some embodiments, the position of unit 10 on substrate 101 is not limited, and in some embodiments, the image sensor includes a plurality of units 10 disposed at different positions on substrate 101, such as units 10PX, 10UR, 10PY, 10UL, 10NX, 10LL, 10NY, 10LR, or combinations thereof, on substrate 101. Units 10PX, 10UR, 10PY, 10UL, 10NX, 10LL, 10NY, and 10LR will be described in detail below.

[0084] In some embodiments, the center C2 of element 10 (or labeled element 10PX in the figure) is positioned on the positive X-axis PX, such that it has an included angle. It is 0°. In some implementations of the 10PX unit, such as Figure 2 and Figure 8 As shown, in the light-shielding mesh 203, the first portion P1, which has a width W1 greater than the width W2 of the second portion P2, is located on the left side of the first color filter layer 202, and the second portion P2 is located on the right, upper, and lower sides of the first color filter layer 202. In some embodiments, the width W1 is equal to W0 + (E0 + ND * E MAX In some implementations of unit 10PX, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 to the right of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first part P3 and a second part P4, wherein the grid has a wider width W3 and the width W3 is equal to W0 + (E0 + ND * E) MAX The first portion P3 is located on the right side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, upper, and lower sides of the second color filter layer 302. In some embodiments of unit 10PX, such as Figure 5 and Figure 8As shown, besides the sensing pixel 300 located to the right of the phase detection autofocus pixel 200, the sensing pixels 300 located to the left, top, and bottom of the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 of uniform width surrounding the second color filter layer 302, and a grid with a width equal to width W4. For clarity, Figure 3 , Figure 6 and Figure 9 They are Figure 2 , Figure 5 and Figure 8 An enlarged view of cell 10PX is provided. Although this disclosure does not include enlarged views of cells 10UR, 10PY, 10UL, 10NX, 10LL, 10NY, and 10LR, those skilled in the art can perceive their meaning from the description herein. Figure 2 , Figure 5 and Figure 8 The enlarged view corresponding to the expected result.

[0085] In some embodiments, the center C2 of unit 10 (or labeled unit 10UR in the figure) is located in the upper right region UR of substrate 101 between the positive X-axis PX and the positive Y-axis PY, so that it has an included angle. It is greater than 0° and less than 90°. In some embodiments of unit 10UR, such as Figure 2 and Figure 8 As shown, in the light-shielding mesh 203, the first portion P1, having a width W1 greater than the width W2 of the second portion P2, is located on the left and lower sides of the first color filter layer 202, and the second portion P2 is located on the right and upper sides of the first color filter layer 202. In some embodiments, the width W1 located on the left side of the first color filter layer 202 is equal to... And the width W1 located below the first color filter layer 202 is equal to In some implementations of unit 10UR, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 to the right of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the right side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, upper, and lower sides of the second color filter layer 302. In some embodiments of unit 10UR, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 above the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the upper side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and lower sides of the second color filter layer 302. In some embodiments of unit 10UR, such as Figure 5 and Figure 8 As shown, in addition to the sensing pixels 300 located to the right and above the phase detection autofocus pixel 200, the sensing pixels 300 located to the left and below the phase detection autofocus pixel 200 are surrounded by light-absorbing grids 303 of uniform width surrounding the second color filter layer 302, and a width equal to the width W4.

[0086] In some embodiments, the center C2 of unit 10 (or labeled unit 10PY in the figure) is located on the positive Y-axis PY, so that it has an included angle. It is 90°. In some implementations of unit 10PY, such as Figure 2 and Figure 8 As shown, in the light-shielding mesh 203, the first portion P1, which has a width W1 greater than the width W2 of the second portion P2, is located below the first color filter layer 202, and the second portion P2 is located on the left, right, and top sides of the first color filter layer 202. In some embodiments, the width W1 is equal to W0 + (E0 + ND * E MAX In some implementations of unit 10PY, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 above the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first part P3 and a second part P4, wherein the grid has a wider width W3 and the width W3 is equal to W0 + (E0 + ND * E) MAX The first portion P3 is located on the upper side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and lower sides of the second color filter layer 302. In some embodiments of unit 10PY, such as Figure 5 and Figure 8 As shown, in addition to the sensing pixel 300 located above the phase detection autofocus pixel 200, the sensing pixels 300 located on the left, right and bottom sides of the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a grid with a width equal to the width W4.

[0087] In some embodiments, the center C2 of unit 10 (or marked as unit 10UL in the figure) is located in the upper left region UL of substrate 101 between the positive Y-axis PY and the negative X-axis NX, so that it has an included angle. It is greater than 90° and less than 180°. In some implementations of the 10UL unit, such as Figure 2 and Figure 8As shown, in the light-shielding mesh 203, the first portion P1, having a width W1 greater than the width W2 of the second portion P2, is located on the right and lower sides of the first color filter layer 202, and the second portion P2 is located on the left and upper sides of the first color filter layer 202. In some embodiments, the width W1 located on the right side of the first color filter layer 202 is equal to... And the width W1 located below the first color filter layer 202 is equal to In some implementations of unit 10UL, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 to the left of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the left side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the right, upper, and lower sides of the second color filter layer 302. In some embodiments of the unit 10UL, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 above the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the upper side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and lower sides of the second color filter layer 302. In some embodiments of the unit 10UL, such as Figure 5 and Figure 8 As shown, in addition to the sensing pixels 300 located to the left and above the phase detection autofocus pixel 200, the sensing pixels 300 located to the right and below the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a width equal to the width W4.

[0088] In some embodiments, the center C2 of unit 10 (or labeled unit 10NX in the figure) is located on the negative X-axis NX, giving it an included angle. It is 180°. In some implementations of the 10NX unit, such as Figure 2 and Figure 8 As shown, in the light-shielding mesh 203, the first portion P1, which has a width W1 greater than the width W2 of the second portion P2, is located on the right side of the first color filter layer 202, and the second portion P2 is located on the left, upper, and lower sides of the first color filter layer 202. In some embodiments, the width W1 is equal to W0 + (E0 + ND * E MAX In some implementations of the 10NX unit, such as Figure 5 andFigure 8 As shown, the sensing pixel 300 to the left of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first part P3 and a second part P4, wherein the grid has a wider width W3 and the width W3 is equal to W0 + (E0 + ND * E MAX The first portion P3 is located on the left side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the right, upper, and lower sides of the second color filter layer 302. In some embodiments of unit 10NX, such as Figure 5 and Figure 8 As shown, in addition to the sensing pixel 300 located to the left of the phase detection autofocus pixel 200, the sensing pixels 300 located to the right, top and bottom of the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a width equal to the width W4.

[0089] In some embodiments, the center C2 of unit 10 (or labeled unit 10LL in the figure) is located in the lower left region LL of substrate 101 between the negative X-axis NX and the negative Y-axis NY, so that it has an included angle. It is greater than 180° and less than 270°. In some embodiments of unit 10LL, such as Figure 2 and Figure 8 As shown, in the light-shielding mesh 203, the first portion P1, having a width W1 greater than the width W2 of the second portion P2, is located on the right and top sides of the first color filter layer 202, and the second portion P2 is located on the left and bottom sides of the first color filter layer 202. In some embodiments, the width W1 located on the right side of the first color filter layer 202 is equal to... And the width W1 located on the upper side of the first color filter layer 202 is equal to In some implementations of unit 10LL, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 to the left of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the left side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the right, upper, and lower sides of the second color filter layer 302. In some embodiments of unit 10LL, such as Figure 5 and Figure 8 As shown, the sensing pixel 300 below the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located below the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and top sides of the second color filter layer 302. In some embodiments of unit 10LL, such as Figure 5 and Figure 8 As shown, in addition to the sensing pixels 300 located to the left and below the phase detection autofocus pixel 200, the sensing pixels 300 located to the right and above the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a width equal to the width W4.

[0090] In some embodiments, the center C2 of unit 10 (or labeled unit 10NY in the figure) is located on the negative Y-axis NY, giving it an included angle. It is 270°. In some embodiments of unit 10NY, such as Figure 10 and Figure 11 As shown, in the light-shielding mesh 203, the first portion P1, which has a width W1 greater than the width W2 of the second portion P2, is located on the upper side of the first color filter layer 202, and the second portion P2 is located on the left, right, and lower sides of the first color filter layer 202. In some embodiments, the width W1 is equal to W0 + (E0 + ND * E MAX In some implementations of unit 10NY, such as Figure 12 and Figure 13 As shown, the sensing pixel 300 below the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to W0 + (E0 + ND * E MAX The first portion P3 is located below the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and top sides of the second color filter layer 302. In some embodiments of unit 10NY, such as Figure 1 and Figure 4 As shown, in addition to the sensing pixel 300 located below the phase detection autofocus pixel 200, the sensing pixels 300 located to the left, right and top of the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a grid with a width equal to the width W4.

[0091] In some embodiments, the center C2 of unit 10 (or marked as unit 10LR in the figure) is located in the lower right region LR of substrate 101 between the positive X-axis PX and the negative Y-axis NY, so that it has an included angle. It is greater than 270° and less than 360°. In some embodiments of unit 10LR, such as Figure 7 and Figure 1As shown, in the light-shielding mesh 203, the first portion P1, having a width W1 greater than the width W2 of the second portion P2, is located on the left and upper sides of the first color filter layer 202, and the second portion P2 is located on the right and lower sides of the first color filter layer 202. In some embodiments, the width W1 located on the left side of the first color filter layer 202 is equal to... And the width W1 located on the upper side of the first color filter layer 202 is equal to In some implementations of unit 10LR, such as Figure 4 and Figure 7 As shown, the sensing pixel 300 to the right of the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located on the right side of the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, upper, and lower sides of the second color filter layer 302. In some embodiments of unit 10LR, such as Figure 1 and Figure 4 As shown, the sensing pixel 300 below the phase detection autofocus pixel 200 has a light-absorbing grid 303 including a first portion P3 and a second portion P4, wherein the grid has a wider width W3 and the width W3 is equal to The first portion P3 is located below the second color filter layer 302, and the second portion P4, having a narrower width W4, is located on the left, right, and top sides of the second color filter layer 302. In some embodiments of unit 10LR, such as Figure 7 and ​ As shown, in addition to the sensing pixels 300 located to the right and below the phase detection autofocus pixel 200, the sensing pixels 300 located to the left and above the phase detection autofocus pixel 200 are surrounded by a light-absorbing grid 303 with a uniform width surrounding the second color filter layer 302, and a grid with a width equal to the width W4.

[0092] In some embodiments, the first portion P1 of the light-shielding mesh 203 in the unit away from the center C1 of the substrate 101 is wider than the first portion P1 of the light-shielding mesh 203 in the unit closer to the center C1 of the substrate 101. For example, the figure shows that the first portion P1 in unit 10PX is wider than the first portion P1 in unit 10PX'. In some embodiments, the first portion P3 of the light-absorbing mesh 303 in the unit away from the center C1 of the substrate 101 is wider than the first portion P3 of the light-absorbing mesh 303 in the unit closer to the center C1 of the substrate 101. For example, the figure shows that the first portion P3 in unit 10PX is wider than the first portion P3 in unit 10PX'. In some embodiments, the image sensor includes a unit 10 (or labeled as unit 10C in the figure) with its center C2 disposed at the center C1 of the substrate 101, a light-shielding grid 203 of unit 10C surrounding a first color filter layer 202 and having a uniform width equal to the width W2, and a light-absorbing grid 303 of unit 10C surrounding a second color filter layer 302 and having a uniform width equal to the width W4.

[0093] In some embodiments, a transparent mesh 103 is located on the light-shielding mesh 203 and the light-absorbing mesh 303. The transparent mesh 103, the light-shielding mesh 203, and the light-absorbing mesh 303 separate the first color filter layer 202 and the second color filter layer 302, and also separate the second color filter layers 302 from each other. In some embodiments, each of the first color filter layer 202 and the second color filter layer 302 is surrounded by the transparent mesh 103. In some embodiments, the portion of the transparent mesh 103 surrounding the first color filter layer 202 includes an inner surrounding side 103I and an outer surrounding side 103O, the light-shielding mesh 203 surrounding the first color filter layer 202 includes an inner surrounding side 203I and an outer surrounding side 203O, and the outer surrounding side 103O is aligned with the outer surrounding side 203O. In some embodiments, the transparent mesh 103 includes a side 103S aligned with a side 303S of the light-absorbing mesh 303, wherein sides 103S and 303S are located on the side of the second color filter layer 302 opposite to the side of the second color filter layer 302 closer to the first color filter layer 202, and sides 103S and 303S are the sides of the transparent mesh 103 and the light-absorbing mesh 303 that surround the second color filter layer 302 and are farther away from the second color filter layer 302 (compared to the side surrounding the second color filter layer 302 and closer to the second color filter layer 302). In some embodiments, one side of the first portion P1 of the light-shielding mesh 203 is aligned with one side of the transparent mesh 103, and the other side of the first portion P1 of the light-shielding mesh 203 extends toward the center C2 within the phase-detection autofocus pixel 200. In some embodiments, one side of the first portion P3 of the light-absorbing grid 303 is aligned with one side of the transparent grid 103, and the other side of the first portion P3 of the light-absorbing grid 303 extends toward the center within the sensing pixel 300. In some embodiments, the width of the transparent grid 103, viewed in cross-section, is equal to width W2 or width W4. In some embodiments, the refractive index of the transparent grid 103 is less than the refractive index of the light-shielding grid 203 and the refractive index of the light-absorbing grid 303. In some embodiments, the transparent grid 103 comprises a dielectric material.

[0094] In some embodiments, a first microlens 204 is located on a first color filter layer 202, and a second microlens 304 is located on a second color filter layer 302. In some embodiments, the first microlens 204 and the second microlens 304 are a single unit made of the same material. In some embodiments, the first microlens 204 has a convex surface protruding away from the first color filter layer 202, and the second microlens 304 has a convex surface protruding away from the second color filter layer 302. In some embodiments, the edge 204E connecting the second microlens 304 and the first microlens 204 is lower than the edge CE connecting the second microlenses 304 in cross-section. When the edge 204E is lower than the edge CE, the radius of curvature of the first microlens 204 can be reduced to increase the sensing sensitivity of the phase detection autofocus pixel 200. In some embodiments, an anti-reflective coating 104 is located on the first microlens 204 and the second microlens 304.

[0095] This disclosure also provides a method for forming the above-described image sensor. The method includes the following operations.

[0096] exist ​ In this process, a substrate 101 having four photodiodes 201 and a single photodiode 301 embedded in it is received. An intermediate layer 102 can be formed on the substrate 101 by any suitable method, such as chemical vapor deposition or physical vapor deposition. The materials of the light-shielding grid 203 and the light-absorbing grid 303 (labeled as material 203' or material 303' in the figure) can be formed on the substrate 101 by any suitable method, such as chemical vapor deposition or physical vapor deposition. A hard mask layer PR1 with openings is formed on the materials of the light-shielding grid 203 and the light-absorbing grid 303, wherein the openings are respectively located on the four photodiodes 201 and the single photodiode 301 to define the positions of the first color filter layer 202 and the second color filter layer 302 to be formed in subsequent operations, and the hard mask layer PR1 is located above the positions where the light-shielding grid 203 and the light-absorbing grid 303 will be formed. The position and width of the hard mask layer PR1 are substantially the same as those of the light-shielding grid 203 and the light-absorbing grid 303, as detailed above. In some embodiments, the hard mask layer PR1 can be formed by any suitable method, such as chemical vapor deposition or physical vapor deposition. In some embodiments, the height of the hard mask layer PR1, viewed in cross-section, is 300 nm to 400 nm.

[0097] exist ​ In this process, portions of the material of the light-shielding mesh 203 and the light-absorbing mesh 303 exposed by the openings of the hard mask layer PR1 are etched to form the light-shielding mesh 203 and the light-absorbing mesh 303. In some embodiments, these portions can be etched by dry etching using an etching gas comprising chlorine.

[0098] exist ​ In this embodiment, the material 103' of the transparent mesh 103 can be formed on the substrate 101, the light-shielding mesh 203, and the light-absorbing mesh 303 by any suitable method, such as chemical vapor deposition or physical vapor deposition. A hard mask layer PR2 with openings is formed on the material 103' of the transparent mesh 103, wherein the openings are respectively located on four photodiodes 201 and a single photodiode 301 to define the positions of the first color filter layer 202 and the second color filter layer 302 to be formed in subsequent operations, and the hard mask layer PR2 is located above the position where the transparent mesh 103 will be formed. In some embodiments, the hard mask layer PR2 can be formed by any suitable method, such as chemical vapor deposition or physical vapor deposition. In some embodiments, the height of the hard mask layer PR2, viewed in cross-section, is 400 nm to 500 nm.

[0099] exist ​ In this process, portions of the material 103' of the transparent mesh 103 exposed by the openings of the hard mask layer PR2 are etched to form the transparent mesh 103. In some embodiments, these portions can be etched by dry etching using an etching gas comprising fluorine. In some embodiments, after the transparent mesh 103 is formed, the first color filter layer 202 and the second color filter layer 302 (e.g., ​ , ​ or ​ As shown, the first color filter layer 202 and the second color filter layer 302 are formed on the substrate 101 and respectively on four photodiodes 201 and a single photodiode 301. In some embodiments, after the formation of the first color filter layer 202 and the second color filter layer 302, the first microlens 204 and the second microlens 304 (as shown) are formed on the substrate 101 and respectively on four photodiodes 201 and a single photodiode 301. ​ , ​ or ​ As shown, the anti-reflective coating 104 is formed on the first color filter layer 202 and the second color filter layer 302, respectively. In some embodiments, after the formation of the first microlens 204 and the second microlens 304, the anti-reflective coating 104 (as shown) is formed on the first color filter layer 202 and the second color filter layer 302, respectively. ​ , ​ or ​ (As shown) is formed on the first microlens 204 and the second microlens 304.

[0100] The image sensor disclosed herein improves the sensitivity of the phase detection autofocus pixel 200 and reduces detection crosstalk between sensing pixels 300. In some embodiments, the image sensor disclosed herein can be used in motion sensors, automotive sensors, or surveillance sensors.

[0101] Although this disclosure has been described in considerable detail with reference to some embodiments, other embodiments may also be possible. Therefore, the concept and scope of the appended claims should not be limited to the embodiments described herein.

[0102] To those skilled in the art, various modifications and alterations can be readily made to this disclosure without departing from its scope or concept. In view of the foregoing, this disclosure is intended to cover modifications and alterations to this disclosure, provided that such modifications and alterations fall within the scope of the appended claims.

Claims

1. An image sensor, characterized in that, include: One unit, including: A phase detection autofocus pixel on a substrate, wherein the phase detection autofocus pixel includes four photodiodes and a first color filter layer on the four photodiodes; Multiple sensing pixels, on the substrate and surrounding the phase-detection autofocus pixel, each of the multiple sensing pixels including a single photodiode and a second color filter layer on the single photodiode; and A light-shielding mesh surrounds the first color filter layer, wherein the light-shielding mesh includes a first portion and a second portion, the first portion being closer to a center of the substrate than the second portion, and the width of the first portion being greater than the width of the second portion when viewed from above.

2. The image sensor of claim 1, wherein, viewed from top view, the substrate has a positive X-axis extending from the center of the substrate to a right edge of the substrate, the unit is located on the positive X-axis, and the first portion of the light-shielding mesh is to the left of the first color filter layer; and the image sensor further includes a light-absorbing mesh surrounding the second color filter layer of one of the plurality of sensing pixels in the unit, wherein the one of the plurality of sensing pixels is located to the right of the phase detection autofocus pixel when viewed from top view, the light-absorbing mesh includes a first portion and a second portion, the first portion of the light-absorbing mesh is located to the right of the one of the plurality of sensing pixels, and a width of the first portion of the light-absorbing mesh is greater than a width of the second portion of the light-absorbing mesh.

3. The image sensor of claim 1, wherein, viewed from top view, the substrate has a negative X-axis extending from the center of the substrate to a left edge of the substrate, the unit is located on the negative X-axis, and the first portion of the light-shielding mesh is to the right of the first color filter layer; and the image sensor further includes a light-absorbing mesh surrounding the second color filter layer of one of the plurality of sensing pixels in the unit, wherein the one of the plurality of sensing pixels is located to the left of the phase detection autofocus pixel when viewed from top view, the light-absorbing mesh includes a first portion and a second portion, the first portion of the light-absorbing mesh is located to the left of the one of the plurality of sensing pixels, and a width of the first portion of the light-absorbing mesh is greater than a width of the second portion of the light-absorbing mesh.

4. The image sensor of claim 1, wherein, viewed from top view, the substrate has a positive Y-axis extending from the center of the substrate to an upper edge of the substrate, the unit is located on the positive Y-axis, and the first portion of the light-shielding mesh is below the first color filter layer; and the image sensor further includes a light-absorbing mesh surrounding the second color filter layer of one of the plurality of sensing pixels in the unit, wherein the one of the plurality of sensing pixels is located above the phase detection autofocus pixel in view, the light-absorbing mesh includes a first portion and a second portion, the first portion of the light-absorbing mesh is located above the one of the plurality of sensing pixels, and a width of the first portion of the light-absorbing mesh is greater than a width of the second portion of the light-absorbing mesh.

5. The image sensor of claim 1, wherein, viewed from top view, the substrate has a negative Y-axis extending from the center of the substrate to a lower edge of the substrate, the unit is located on the negative Y-axis, and the first portion of the light-shielding mesh is above the first color filter layer; and the image sensor further includes a light-absorbing mesh surrounding the second color filter layer of one of the plurality of sensing pixels in the unit, wherein the one of the plurality of sensing pixels is located below the phase detection autofocus pixel in top view, the light-absorbing mesh includes a first portion and a second portion, the first portion of the light-absorbing mesh is located below the one of the plurality of sensing pixels, and a width of the first portion of the light-absorbing mesh is greater than a width of the second portion of the light-absorbing mesh.

6. The image sensor of claim 1, wherein, viewed from above, the substrate has an upper right region between a positive X-axis and a positive Y-axis, the positive X-axis and the positive Y-axis extending from the center of the substrate to a right edge and a top edge of the substrate, respectively, the unit being located in the upper right region, and the first portion of the light-shielding mesh being to the left and below the first color filter layer. The image sensor further includes: a first light-absorbing grid surrounding the second color filter layer of one of the plurality of sensing pixels in the unit; and a second light-absorbing grid surrounding the second color filter layer of the other of the plurality of sensing pixels in the unit, wherein: The one of the plurality of sensing pixels, viewed from above, is located to the right of the phase detection autofocus pixel. The first light-absorbing grid includes a first portion and a second portion. The first portion of the first light-absorbing grid is located to the right of the one of the plurality of sensing pixels, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid. The other of the plurality of sensing pixels is located above the phase detection autofocus pixel when viewed from above. The second light-absorbing grid includes a first portion and a second portion. The first portion of the second light-absorbing grid is located above the other of the plurality of sensing pixels, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

7. The image sensor of claim 1, wherein, viewed from above, the substrate has an upper left region between a negative X-axis and a positive Y-axis, the negative X-axis and the positive Y-axis extending from the center of the substrate to a left edge and an upper edge of the substrate, respectively, the unit being located in the upper left region, and the first portion of the light-shielding mesh being located to the right and below the first color filter layer. The image sensor further includes: a first light-absorbing grid surrounding the second color filter layer of one of the plurality of sensing pixels in the unit; and a second light-absorbing grid surrounding the second color filter layer of the other of the plurality of sensing pixels in the unit, wherein: The one of the plurality of sensing pixels, viewed from above, is located to the left of the phase detection autofocus pixel. The first light-absorbing grid includes a first portion and a second portion. The first portion of the first light-absorbing grid is located to the left of the one of the plurality of sensing pixels, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid. The other of the plurality of sensing pixels is located above the phase detection autofocus pixel when viewed from above. The second light-absorbing grid includes a first portion and a second portion. The first portion of the second light-absorbing grid is located above the other of the plurality of sensing pixels, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

8. The image sensor of claim 1, wherein, viewed from above, the substrate has a lower left region between a negative X-axis and a negative Y-axis, the negative X-axis and the negative Y-axis extending from the center of the substrate to a left edge and a lower edge of the substrate, respectively, the unit being located in the lower left region, and the first portion of the light-shielding mesh being on the right and upper side of the first color filter layer. The image sensor further includes: a first light-absorbing grid surrounding the second color filter layer of one of the plurality of sensing pixels in the unit; and a second light-absorbing grid surrounding the second color filter layer of the other of the plurality of sensing pixels in the unit, wherein: The one of the plurality of sensing pixels, viewed from above, is located to the left of the phase detection autofocus pixel. The first light-absorbing grid includes a first portion and a second portion. The first portion of the first light-absorbing grid is located to the left of the one of the plurality of sensing pixels, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid. The other of the plurality of sensing pixels is located below the phase detection autofocus pixel when viewed from above. The second light-absorbing grid includes a first portion and a second portion. The first portion of the second light-absorbing grid is located below the other of the plurality of sensing pixels, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

9. The image sensor of claim 1, wherein, viewed from above, the substrate has a lower right region between a positive X-axis and a negative Y-axis, the positive X-axis and the negative Y-axis extending from the center of the substrate to a right edge and a lower edge of the substrate, respectively, the unit being located in the lower right region, and the first portion of the light-shielding mesh being on the left and upper side of the first color filter layer. The image sensor further includes: a first light-absorbing grid surrounding the second color filter layer of one of the plurality of sensing pixels in the unit; and a second light-absorbing grid surrounding the second color filter layer of the other of the plurality of sensing pixels in the unit, wherein: The one of the plurality of sensing pixels, viewed from above, is located to the right of the phase detection autofocus pixel. The first light-absorbing grid includes a first portion and a second portion. The first portion of the first light-absorbing grid is located to the right of the one of the plurality of sensing pixels, and the width of the first portion of the first light-absorbing grid is greater than the width of the second portion of the first light-absorbing grid. The other of the plurality of sensing pixels is located below the phase detection autofocus pixel when viewed from above. The second light-absorbing grid includes a first portion and a second portion. The first portion of the second light-absorbing grid is located below the other of the plurality of sensing pixels, and the width of the first portion of the second light-absorbing grid is greater than the width of the second portion of the second light-absorbing grid.

10. The image sensor of claim 1, further comprising a plurality of light-absorbing grids, each of the plurality of light-absorbing grids surrounding the second color filter layer of the plurality of sensing pixels in the unit, wherein, viewed from top, the plurality of light-absorbing grids includes a plurality of portions located on one side of the phase-detection autofocus pixel, the side being adjacent to the first portion of the light-shielding grid relative to the phase-detection autofocus pixel, the width of the first portion of the light-shielding grid and the plurality of widths of the plurality of portions of the plurality of light-absorbing grids being equal to W0 + (E0 + ND * E MAX W0 is 50nm to 150nm, E0 is 0 to 1 / 4 times the length of one of the four photodiodes of the phase detection autofocus pixel, and E MAX For a length of 0 to 1 / 3, ND equals D / D. MAX D is a distance between the center of the substrate and the center of the unit, and D MAX It is a distance between the center of the substrate and the edge of the substrate that is furthest from the center of the substrate.

11. The image sensor of claim 1, wherein, viewed from above, a connecting line is defined as connecting the center of the substrate and the center of the unit, at an included angle. Located between the connecting line and a positive X-axis of the substrate, the positive X-axis extending from the center of the substrate to a right edge of the substrate, the first portion of the light-shielding mesh includes a first width and a second width, the first width being equal to... The second width equals W0 is 50nm to 150nm, E0 is 0 to 1 / 4 times the length of one of the four photodiodes of the phase detection autofocus pixel, and E... MAX For a length of 0 to 1 / 3, ND equals D / D. MAX D is a distance between the center of the substrate and the center of the unit, and D MAX It is a distance between the center of the substrate and the edge of the substrate that is furthest from the center of the substrate.

12. The image sensor of claim 11, further comprising a plurality of light-absorbing grids, each of the plurality of light-absorbing grids surrounding the second color filter layer of the plurality of sensing pixels in the unit, wherein, viewed from top, the plurality of light-absorbing grids includes a plurality of first portions located on a first side of the phase-detection autofocus pixel and a plurality of second portions located on a second side of the phase-detection autofocus pixel, the first side being adjacent to the first width of the first portion of the light-absorbing grid relative to the phase-detection autofocus pixel, and the second side being adjacent to the second width of the first portion of the light-absorbing grid relative to the phase-detection autofocus pixel, the plurality of widths of the plurality of first portions of the plurality of light-absorbing grids being equal to And the widths of the plurality of second portions of the plurality of light-absorbing grids are equal to

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