Optical phase modulator, preparation method thereof and phased array device

Abstract

The invention relates to the technical field of optical devices, and discloses an optical phase modulator and a preparation method thereof, and a phased array device.The optical phase modulator comprises a substrate layer, a waveguide structure and a piezoelectric structure, the waveguide structure is arranged on the substrate layer and comprises a waveguide core layer with a waveguide core structure, and the piezoelectric structure is arranged on the substrate layer; the waveguide core structure comprises two spiral-line-shaped waveguide cores which are arranged in a nested mode and have one ends connected with each other. The piezoelectric structure is arranged on the waveguide structure and comprises a lower electrode layer, a piezoelectric material layer and an upper electrode layer which are sequentially arranged, the upper electrode structure in the upper electrode layer corresponds to at least part of the waveguide core structure of the waveguide core layer, and the upper electrode structure comprises two spiral linear electrodes and a plurality of connecting parts connected with the two spiral linear electrodes. The waveguide core structure and the upper electrode structure adopt the same spiral linear structure, a longer device length is realized with a smaller occupied area, and the adjacent parts of the two spiral linear electrodes are provided with a plurality of connecting parts, so that the parasitic resistance is effectively reduced, and the modulation speed of the device is improved.

Description

Technical Field

[0001] This invention relates to the field of optical device technology, specifically to an optical phase modulation device and its fabrication method, and a phased array device. Background Technology

[0002] Optical phase modulators are fundamental devices in integrated optics with a wide range of applications. Their working principle involves applying specific excitations such as electric fields, temperature, or stress to an optical waveguide to generate physical effects such as electro-optic, thermo-optic, and elasto-optic effects. This causes a change in the effective refractive index of the optical waveguide, thereby altering the phase of the light beam passing through it, achieving optical phase modulation. Among these, stress-induced optical phase modulators have attracted widespread attention due to their advantages such as low power consumption and high modulation speed.

[0003] Stress-induced optical phase modulators typically consist of an optical waveguide and a piezoelectric actuator above it. The electrode structure within the piezoelectric actuator generates a specific excitation that produces a physical effect on the optical waveguide. The modulation efficiency of a stress-induced optical phase modulator is expressed as the π-phase-shift voltage-length product V. π L represents the driving voltage V required for the modulator to generate a π phase shift. π Multiply by the length L of the top electrode above the optical waveguide. For devices with defined materials and cross-sectional dimensions (e.g., top electrode width, piezoelectric layer thickness, top cladding thickness, etc.), V π L is also a fixed value, when a lower π phase shift drive voltage V is required. π When this happens, the length of the device will be relatively large, that is, V π The reduction in voltage is limited by the length of the device. To achieve optical modulation at a relatively small π phase shift driving voltage, the stress optical phase modulation devices in related schemes typically have a large longitudinal footprint. Furthermore, longer devices generate larger parasitic resistances, affecting the modulation speed. Moreover, due to the limitations of the length of the optical chip and the device, it is difficult to further reduce the π phase shift driving voltage. Summary of the Invention

[0004] In view of this, the present invention provides an optical phase modulation device and its fabrication method, as well as a phased array device, to solve the problems of high π phase shift driving voltage and large vertical footprint of existing optical phase modulation devices.

[0005] In a first aspect, the present invention provides an optical phase modulation device, comprising: a substrate layer, a waveguide structure, and a piezoelectric structure, wherein the waveguide structure is disposed on one side surface of the substrate layer; the waveguide structure includes a waveguide core layer having a waveguide core structure, the waveguide core structure including two helical waveguide cores nested together and connected at one end to each other; the piezoelectric structure is disposed on one side surface of the waveguide structure away from the substrate layer; the piezoelectric structure includes a lower electrode layer, a piezoelectric material layer, and an upper electrode layer disposed sequentially from the waveguide structure outwards, wherein the upper electrode structure in the upper electrode layer corresponds to at least a portion of the waveguide core structure of the waveguide core layer, and the upper electrode structure includes two helical electrodes having the same shape as the helical waveguide cores, and a plurality of connecting portions connecting the two helical electrodes.

[0006] Beneficial effects: The waveguide core layer of the modulation section has at least two helical waveguide cores, and the piezoelectric structure, i.e., the piezoelectric actuator, includes an upper electrode structure that corresponds to at least two helical waveguide cores. The waveguide core structure of the modulation section and the upper electrode structure of the piezoelectric structure adopt the same helical structure, resulting in a compact structure that effectively reduces the device's footprint, achieving a longer device length with a smaller footprint. Furthermore, the two helical electrodes of the upper electrode structure have multiple connection points on adjacent sections, effectively reducing the parasitic resistance of the upper electrode and thus improving the modulation speed of the device.

[0007] In one optional embodiment, the waveguide core structure further includes a curved waveguide core and / or two straight waveguide cores; the curved waveguide core includes two semi-circular waveguide cores, one end of the two semi-circular waveguide cores is connected to each other, and the other end is respectively connected to the inner end of the two helical waveguide cores; the two straight waveguide cores are respectively connected to the outer end of the two helical waveguide cores.

[0008] In this invention, the waveguide core structure of the waveguide core layer consists of two helical waveguide cores, a curved waveguide core, and two straight waveguide cores. Each part has a smooth transition at the end connection to reduce optical loss. The width of each part can be set differently, and a tapered gradient transition is used to further reduce optical loss. The refractive index of the waveguide core material is greater than that of the underlying cladding material, ensuring effective light transmission of the waveguide core structure.

[0009] In one optional embodiment, the waveguide structure further includes a lower cladding layer and an upper cladding layer, wherein the lower cladding layer is disposed on the substrate layer, the waveguide core layer is located on the side surface of the lower cladding layer opposite to the substrate layer, and the upper cladding layer is located on the side surface of the lower cladding layer opposite to the substrate layer and covers the waveguide core structure.

[0010] In one optional embodiment, the upper electrode layer further includes: an upper electrode lead and an upper electrode pad; one end of the upper electrode lead is connected to a spiral electrode and the other end is connected to the upper electrode pad; the lower electrode layer further includes a lower electrode pad, which is exposed from the piezoelectric material layer.

[0011] In one optional embodiment, the upper electrode structure further includes: a curved electrode corresponding to the curved waveguide core, the curved electrode including two semi-circular arc electrodes with the same radius, one end of the two semi-circular arc electrodes being connected to each other, and the other end being connected to the inner end of the two helical electrodes respectively.

[0012] In one optional embodiment, the upper electrode structure further includes: a first linear electrode, the two ends of which are respectively connected to the inner ends of two spiral electrodes.

[0013] In one optional embodiment, the upper electrode structure further includes: a second linear electrode adapted to connect two spiral electrodes; the second linear electrode extends linearly from the innermost side of the spiral electrode to the outermost side of the spiral electrode; the second linear electrode is staggered with a plurality of connecting portions; or the plurality of connecting portions are connected end to end along a straight line to form the second linear electrode.

[0014] In one alternative embodiment, the upper electrode structure further includes a third linear electrode, which is disposed corresponding to at least a portion of the linear waveguide core, and the third linear electrode is connected to one outer end of the helical electrode.

[0015] In this invention, the upper electrode structure is located above the waveguide core structure, and can partially or completely cover it to form different upper electrode structures. The helical and curved electrodes form a relatively long effective upper electrode within a defined area, and the connection portion effectively reduces parasitic resistance and increases the modulation rate. The inner ends of the two helical electrodes can also be connected by a straight electrode, or the two helical electrodes can be connected by a second straight electrode that radially connects the two helical electrodes from the center outwards. This increases the effective electrode length and allows for multiple connections between the two helical electrodes, reducing parasitic resistance and increasing the modulation speed.

[0016] In one alternative implementation, it further includes:

[0017] An adhesion layer is disposed between the upper cladding layer and the lower electrode layer;

[0018] The first buffer layer is disposed between the piezoelectric material layer and the lower electrode layer;

[0019] The second buffer layer is disposed between the piezoelectric material layer and the upper electrode layer.

[0020] In this invention, the adhesion layer ensures good adhesion between the lower electrode layer and the upper cladding layer; the first buffer layer and the second buffer layer ensure that the piezoelectric material layer has better piezoelectric performance and service life.

[0021] Secondly, the present invention also provides a phased array device, including a plurality of the above-described optical phase modulation devices.

[0022] Beneficial effects: Optical phased array devices achieve beam deflection and continuous scanning by controlling the phase of the beam in each coherent combining unit, featuring no mechanical inertia, high scanning accuracy, and high resolution. Optical phase modulation devices are the core components of optical phased array devices, helping to improve the quality of the deflected beam and scanning accuracy. Phased array devices equipped with these optical phase modulation devices offer advantages such as speed, flexibility, and high efficiency.

[0023] Thirdly, the present invention also provides a method for fabricating an optical phase modulation device, comprising:

[0024] Provide a substrate layer;

[0025] A waveguide structure is formed on one side surface of the substrate layer; the waveguide structure includes a waveguide core layer with a waveguide core structure, the waveguide core structure including at least two nested helical waveguide cores connected to each other at one end;

[0026] A piezoelectric structure is formed on the side of the waveguide structure away from the substrate layer. The piezoelectric structure includes a lower electrode layer, a piezoelectric material layer and an upper electrode layer arranged sequentially from the waveguide structure outward. The upper electrode structure of the upper electrode layer is arranged corresponding to at least a part of the waveguide core structure of the waveguide core layer. The upper electrode structure includes two helical electrodes with the same shape as the helical waveguide core and a plurality of connecting portions connecting the two helical electrodes.

[0027] Beneficial effects: The optical phase modulation device prepared by the above method adopts the same helical structure for the waveguide core structure of the modulation part and the upper electrode structure of the piezoelectric structure. The structure is compact and effectively shortens the device footprint, achieving a longer device length with a smaller footprint. At the same time, the two helical electrodes of the upper electrode structure have multiple connection parts on adjacent parts, which effectively reduces the parasitic resistance of the upper electrode and thus improves the modulation speed of the device.

[0028] In one alternative embodiment, a waveguide structure is formed on one side surface of the substrate layer, including:

[0029] A lower cladding layer is formed on one side surface of the substrate layer;

[0030] An initial waveguide core layer is formed on the surface of the lower cladding layer that is away from the substrate layer;

[0031] The initial waveguide core layer is patterned to form a waveguide core layer with a waveguide core structure; the waveguide core structure includes two helical waveguide cores, a curved waveguide core, and two straight waveguide cores;

[0032] An upper cladding layer is formed on the surface of the lower cladding layer that is away from the substrate layer, and the upper cladding layer covers the waveguide core structure.

[0033] Planarize the surface of the upper cladding layer that is away from the substrate layer.

[0034] In one alternative embodiment, a piezoelectric structure is formed on the surface of the waveguide structure facing away from the substrate, including:

[0035] A lower electrode layer is formed on the surface of the waveguide structure facing away from the substrate layer;

[0036] An initial piezoelectric material layer is formed on the surface of the lower electrode layer that is away from the substrate layer;

[0037] An initial top electrode layer is formed on the surface of the piezoelectric material layer facing away from the substrate layer;

[0038] The initial top electrode layer is patterned to form a top electrode layer with a top electrode structure; the top electrode layer includes two helical electrodes, multiple connecting portions connecting the two helical electrodes, a third straight electrode, top electrode leads, and top electrode pads; the top electrode layer also includes: a curved electrode, and / or a first straight electrode, and / or a second straight electrode.

[0039] The initial piezoelectric material layer is patterned to expose part of the lower electrode layer, forming the lower electrode pad and the piezoelectric material layer.

[0040] In one alternative implementation, the patterned initial piezoelectric material layer further includes:

[0041] Partial removal of the piezoelectric material layer outside the lower electrode pad area exposes part of the upper cladding.

[0042] In one alternative embodiment, after forming a waveguide structure on one side surface of the substrate layer and before forming a piezoelectric structure on the side surface of the waveguide structure away from the substrate layer, the method further includes: forming an adhesion layer on the side surface of the waveguide structure away from the substrate layer, and forming the piezoelectric structure on the adhesion layer.

[0043] After forming a lower electrode layer on the side of the waveguide structure away from the substrate layer, and before forming an initial piezoelectric material layer on the side of the lower electrode layer away from the substrate layer, the method further includes: disposing a first buffer layer on the lower electrode layer, and disposing the initial piezoelectric material layer on the first buffer layer.

[0044] After forming an initial piezoelectric material layer on the side of the lower electrode layer away from the substrate layer, and before forming an initial upper electrode layer on the side of the piezoelectric material layer away from the substrate layer, the method further includes: setting a second buffer layer on the side of the initial piezoelectric material layer away from the substrate layer, and forming the initial upper electrode layer on the second buffer layer. Attached Figure Description

[0045] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0046] Figure 1 This is a top view schematic diagram of the optical phase modulation device according to an embodiment of the present invention;

[0047] Figure 2 It is along Figure 1 The sectional view cut by AA;

[0048] Figure 3 This is a schematic diagram of an optical phase modulation device according to an embodiment of the present invention, wherein the upper electrode structure includes a spiral electrode and a curved electrode;

[0049] Figure 4 This is a schematic diagram of an optical phase modulation device according to an embodiment of the present invention, wherein the upper electrode structure includes a spiral electrode and a first linear electrode;

[0050] Figure 5 This is a schematic diagram of an optical phase modulation device according to an embodiment of the present invention, wherein the upper electrode structure includes a spiral electrode and a second straight electrode;

[0051] Figure 6 This is a schematic diagram of an optical phase modulation device according to an embodiment of the present invention, wherein the upper electrode structure includes a spiral electrode, a curved electrode and a third straight electrode;

[0052] Figure 7 This is a schematic diagram of the substrate layer, lower cladding layer, and initial waveguide core layer in an embodiment of the present invention;

[0053] Figure 8 This is a top view schematic diagram of a waveguide core layer with a waveguide core structure formed on an initial waveguide core layer in an embodiment of the present invention;

[0054] Figure 9 It is along Figure 8 A cross-sectional view taken from BB;

[0055] Figure 10 This is a schematic diagram of the substrate layer and waveguide structure in an embodiment of the present invention;

[0056] Figure 11 This is a schematic diagram of the substrate layer, waveguide core layer, lower electrode layer, piezoelectric material layer and initial upper electrode layer in an embodiment of the present invention.

[0057] Explanation of reference numerals in the attached figures:

[0058] 1. Substrate layer;

[0059] 2. Waveguide structure; 21. Lower cladding; 22. Waveguide core layer; 22a. Initial waveguide core layer; 220. Waveguide core structure; 221. Helical waveguide core; 222. Curved waveguide core; 223. Straight waveguide core; 23. Upper cladding;

[0060] 3. Piezoelectric structure; 31. Lower electrode layer; 311. Lower electrode pad; 32. Piezoelectric material layer; 33. Upper electrode layer; 33a. Initial upper electrode layer; 330. Upper electrode structure; 331. Spiral electrode; 332. Connector; 333. Curved electrode; 334. First straight electrode; 335. Second straight electrode; 336. Third straight electrode; 337. Upper electrode lead; 338. Upper electrode pad. Detailed Implementation

[0061] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. It should also be noted that, for ease of description, only the parts relevant to the invention are shown in the drawings, not all structures. In the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily obscuring the concept of the invention. Various structural schematic diagrams according to embodiments of the present invention are shown in the drawings. These figures are not drawn to scale, and some details are enlarged for clarity, and some details may be omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from actual practices due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed. In the context of the present invention, when a layer / element is referred to as being "on" another layer / element, the layer / element may be directly on the other layer / element, or there may be an intermediate layer / element between them. Additionally, if one layer / component is "above" another layer / component in one orientation, then when the orientation is reversed, that layer / component can be "below" that other layer / component.

[0062] In related technologies, optical waveguides typically consist of a lower cladding, a waveguide core, and an upper cladding, while piezoelectric actuators consist of a lower electrode, a piezoelectric material layer, and an upper electrode. Existing stress-based optical phase modulators often employ a straight waveguide core and a straight piezoelectric actuator upper electrode, or a folded waveguide core and a straight piezoelectric actuator upper electrode design. However, due to the modulation efficiency of stress-based optical phase modulators, which is essentially the π-phase shift voltage-length product V... π L, usually greater than 10 V·cm, V πV is the driving voltage required for the modulator to generate the π phase shift, and L is the length of the upper electrode above the waveguide. For devices with defined materials and cross-sectional dimensions (e.g., upper electrode width, piezoelectric layer thickness, upper cladding thickness, etc.), V π L is also a fixed value, when a lower π phase shift drive voltage V is required. π In this case, the length L of the device will be relatively large, but the size of the optical chip is finite, therefore V π The reduction is limited by the length of the device.

[0063] To achieve optical modulation with a relatively small π-phase shift drive voltage, the stress-based optical phase modulation devices in related schemes typically have a large vertical footprint. The device length is limited by the size of the optical chip, making it difficult to further reduce the π-phase shift drive voltage. Furthermore, longer devices generate larger parasitic resistances, affecting the modulation speed.

[0064] Therefore, refer to Figures 1 to 11 This embodiment provides an optical phase modulation device, including: a substrate layer 1, a waveguide structure 2, and a piezoelectric structure 3. The waveguide structure 2 is disposed on one side surface of the substrate layer 1. The waveguide structure 2 includes a waveguide core layer 22 having a waveguide core structure 220. The waveguide core structure 220 includes two helical waveguide cores 221 nested together and connected at one end. The piezoelectric structure 3 is disposed on the side surface of the waveguide structure 2 away from the substrate layer 1. The piezoelectric structure 3 includes a lower electrode layer 31, a piezoelectric material layer 32, and an upper electrode layer 33 arranged sequentially from the waveguide structure 2 outward. The upper electrode structure 330 in the upper electrode layer 33 is correspondingly disposed to at least a portion of the waveguide core structure 220 of the waveguide core layer 22. The upper electrode structure 330 includes two helical electrodes 331 with the same shape as the helical waveguide cores 221, and a plurality of connecting portions 332 connecting the two helical electrodes 331.

[0065] Specifically, the substrate layer 1 is preferably a silicon substrate; the waveguide core structure 220 in the waveguide structure 2 can be a single-layer structure of materials such as silicon nitride (Si3N4) or silicon (Si), or a stacked structure such as silicon nitride / silicon oxide / silicon nitride (Si3N4 / SiO2 / Si3N4), and the thickness of the waveguide core structure 220 ranges from 10nm to 1000nm; the waveguide core structure 220 of the waveguide core layer 22 includes at least two helical waveguide cores 221 with the same helical direction and nested together. In this embodiment, the helical type of the helical waveguide core 221 is preferably an Archimedean spiral, which has a compact structure. The spacing between adjacent parts of the two helical waveguide cores 221 ranges from 5μm to 50μm. The optimal value is determined by comprehensively considering the optical crosstalk of the waveguide core structure 220 and the floor area of ​​the waveguide core structure 220. Of course, the helical type can also be selected from logarithmic spirals, equiangular spirals, Fermat spirals, hyperbolic spirals, etc.

[0066] In the piezoelectric structure 3, the lower electrode layer 31 can be a platinum (Pt) thin film with a thickness ranging from 50 nm to 200 nm; the piezoelectric material layer 32 can be lead zirconate titanate (PZT) material with a thickness ranging from 1 μm to 3 μm; the upper electrode layer 33 is the same as the lower electrode layer 31 and can be a platinum (Pt) thin film with a thickness ranging from 50 nm to 200 nm. The upper electrode structure 330 of the upper electrode layer 33 has at least two helical electrodes 331 corresponding to the helical waveguide core 221, and a block-shaped connecting portion 332 connecting the two helical electrodes 331. The spacing between adjacent portions of the helical electrodes 331 can be set to 1μm to 20μm, and the length of the portion of the upper electrode structure 330 above the waveguide core structure 220 is set to 1cm to 20cm. Multiple connecting portions 332 can be arranged radially at intervals or continuously along the helix, or slightly offset radially from the helix. Of course, multiple connecting portions 332 can also be arranged radially at different angles. In this embodiment, in... Figure 1 From the perspective shown, multiple connecting parts 332 are spaced apart along the horizontal radial direction and the vertical diameter direction of the spiral, and are arranged in an orderly and uniform manner, which helps to further reduce the parasitic resistance between the two spiral electrodes 331.

[0067] For the nested circular spiral waveguide core structure 220 or upper electrode structure 330 of this application, conventional folded structures are easily limited by the bending radius due to the multiple bending regions. The bending regions occupy a larger area, and the parasitic resistance of the bending parts is larger, which is not conducive to improving the modulation efficiency. The shape of this application is more conducive to reducing parasitic resistance.

[0068] In this embodiment of the optical phase modulation device, the waveguide core layer 22 of the modulation section is provided with at least two helical waveguide cores 221, the piezoelectric structure 3 is a piezoelectric actuator, and the upper electrode structure 330 of the upper electrode layer 33 includes at least two electrodes corresponding to the two helical waveguide cores 221. The waveguide core structure 220 of the modulation section and the upper electrode structure 330 of the piezoelectric structure 3 use the same helical electrodes 331, resulting in a compact structure that effectively shortens the device's footprint and achieves a longer device length with a smaller footprint. At the same time, the two helical electrodes 331 of the upper electrode structure 330 are provided with multiple connecting portions 332 on adjacent parts, which effectively reduces the parasitic resistance of the upper electrode and thus improves the modulation speed of the device.

[0069] In one embodiment, such as Figure 8As shown, the waveguide core structure 220 also includes a curved waveguide core 222 and two straight waveguide cores 223, or it may only include the curved waveguide core 222 or only the straight waveguide cores 223. The inner ends of the two helical waveguide cores 221 are interconnected. The curved waveguide core 222 includes two semi-circular waveguide cores with the same radius. One end of the two semi-circular waveguide cores is connected to each other, and the other end is connected to the inner end of each of the two helical waveguide cores 221. The two straight waveguide cores 223 are respectively connected to the outer ends of the two helical waveguide cores 221. Of course, the curved waveguide core 222 can also be a curved waveguide core of other shapes, such as semi-circular waveguide cores with different radii, or wavy waveguide cores, etc.

[0070] In this embodiment, the curved waveguide core 222 is configured as an S-shape, that is, it includes two semi-circular waveguide cores with the same radius range, such as 10μm to 500μm. The optimal value is determined by comprehensively considering bending loss and floor space. The two semi-circular waveguide cores have opposite opening directions and are connected vertically. In this embodiment, as shown... Figure 1 and Figure 8 As shown, of the two helical waveguide cores 221, one helical waveguide core has its inner end connected to the upper end of the curved waveguide core 222, and the other helical waveguide core has its inner end connected to the lower end of the curved waveguide core 222. The radius of the inner end of the helical waveguide core 221 is greater than or equal to the diameter of the connected semi-circular waveguide core. The sum of the lengths of the two helical waveguide cores 221 and the two semi-circular waveguide cores is 1cm to 20cm. Figure 1 From the top-down view shown, of the two linear waveguide cores 223, one linear waveguide core is positioned at the top and connected to the outer end of one of the helical waveguide cores, while the other linear waveguide core is positioned at the bottom and connected to the outer end of the other helical waveguide core. The ends of the two linear waveguide cores 223 away from the helical waveguide core 221 are suitable for serving as the input and output ends for light propagation, respectively.

[0071] The waveguide core structure 220 of the waveguide core layer 22 consists of two helical waveguide cores 221, a curved waveguide core 222, and two straight waveguide cores 223. Each part has a smooth transition at the end connection to reduce optical loss. The width range of the helical waveguide core 221, the semi-circular waveguide core, and the straight waveguide core 223 is set to 0.2μm to 5μm. For example, the width of each part can be set differently, and optical loss is reduced by tapered gradient transition.

[0072] like Figure 2 , Figure 10 and Figure 11As shown, the waveguide structure 2 further includes a lower cladding layer 21 and an upper cladding layer 23. The lower cladding layer 21 is disposed on the substrate layer 1. The waveguide core layer 22 is located on the side surface of the lower cladding layer 21 away from the substrate layer 1. The upper cladding layer 23 is located on the side surface of the lower cladding layer 21 away from the substrate layer 1 and covers the waveguide core structure 220.

[0073] Specifically, the lower cladding 21 is preferably a thermally oxidized SiO2 thin film with a thickness ranging from 1 μm to 20 μm, and its upper and lower surfaces are relatively flat; the upper cladding 23 is preferably SiO2 with a thickness ranging from 1 μm to 5 μm, and optionally, the upper and lower surfaces of the upper cladding 23 are also flat surfaces. The refractive index (or effective refractive index) of the waveguide core layer 22 is greater than that of the lower cladding 21, ensuring effective light transmission of the waveguide core structure 220.

[0074] In one embodiment, the width of the upper electrode structure 330 is greater than the width of the waveguide core structure 220.

[0075] In this embodiment, both the lower electrode layer 31 and the piezoelectric material layer 32 are planar films. The upper electrode layer 33 forms an upper electrode structure 330 with a specific pattern through strip-shaped electrodes. The length and width of the lower electrode layer 31 are both greater than or equal to the length and width of the piezoelectric material layer 32. The projection of the upper electrode structure 330 lies within the range of the lower electrode layer 31 and the piezoelectric material layer. More importantly, the width of the upper electrode structure 330 is greater than the width of the waveguide core structure 220 directly below it. It should be noted that both the upper electrode structure 330 and the waveguide core structure 220 include upper electrodes and waveguide cores of various shapes to ensure efficient optical phase modulation by modifying the light beam passing through the lower waveguide core. For example, the width of the upper electrode structure 330 is set to 4μm to 30μm, while the width of the waveguide core structure 220 is 0.2μm to 5μm.

[0076] like Figure 1 As shown, in one embodiment, the upper electrode layer 33 further includes an upper electrode lead 337 and an upper electrode pad 338; one end of the upper electrode lead 337 is connected to the spiral electrode 331 and the other end is connected to the upper electrode pad 338; the lower electrode layer 31 further includes a lower electrode pad 311, which is exposed from the piezoelectric material layer 32.

[0077] like Figure 1As shown, an upper electrode lead 337 and an upper electrode pad 338 are formed on the right side of the upper electrode structure 330 in the upper electrode layer 33. The upper electrode lead 337 connects the upper electrode structure 330 and the upper electrode pad 338. The upper electrode pad 338 can be square or circular, without specific limitation, to realize the power conduction between the upper electrode layer 33 and the lower electrode layer 31. The width range of the upper electrode lead 337 is set to 5μm to 30μm, and the width range of the upper electrode pad 338 is set to 50μm to 300μm.

[0078] In this invention, the upper electrode structure 330 is located above the waveguide core structure 220, and can partially or completely cover it, specifically including the following types:

[0079] In one embodiment, forming as Figure 3 The first type of upper electrode structure shown, based on the above-mentioned scheme with helical electrode 331, further includes an upper electrode structure 330: a curved electrode 333 corresponding to the curved waveguide core 222. The curved electrode 333 includes two semi-circular arc electrodes, one end of the two semi-circular arc electrodes is connected to each other, and the other end is respectively connected to the inner end of the two helical electrodes 331.

[0080] The first type of upper electrode structure 330 includes: two helical electrodes 331 and one curved electrode 333. The two ends of the curved electrode 333 are respectively connected to the inner ends of the two helical electrodes 331. The adjacent portions between the two helical electrodes 331 have multiple small connecting portions 332. An upper electrode lead 337 connects the outermost helical electrode 331 to the upper electrode pad 338. In this structure, the helical electrodes 331 and the curved electrode 333 form a relatively long effective upper electrode within a defined footprint, and the connecting portions 332 effectively reduce parasitic resistance and improve the modulation rate.

[0081] In another embodiment, forming as Figure 4 The second type of upper electrode structure shown, based on the above-mentioned scheme with helical electrode 331, further includes a first straight electrode 334, with the two ends of the first straight electrode 334 respectively connected to the inner ends of the two helical electrodes 331.

[0082] The second type of upper electrode structure 330 includes: two spiral electrodes and a first straight electrode 334 connected in the middle, with one inner end of the two spiral electrodes connected by a strip-shaped straight electrode; similarly, the adjacent portion between the two spiral electrodes 331 has a plurality of small connecting portions 332; the upper electrode lead 337 connects the outermost spiral electrode 331 to the upper electrode pad 338.

[0083] In yet another embodiment, the formation is as follows Figure 5 The third type of upper electrode structure shown, based on the above-mentioned scheme with helical electrode 331, further includes a second straight electrode 335, which is suitable for connecting the two helical electrodes 331; the second straight electrode 335 extends straight from the innermost side of the helical electrode 331 to the outermost side of the helical electrode 331.

[0084] The third type of upper electrode structure 330 includes two helical electrodes 331 and a second straight electrode 335 that connects the two helical electrodes 331 radially outward from the center. In this case, the two helical electrodes 331 can be connected at multiple points, reducing parasitic resistance and improving modulation speed.

[0085] It is worth noting that in this upper electrode structure 330, the second linear electrode 335 can be an integral structure, and the second linear electrode 335 and multiple connecting parts 332 are staggered to further reduce parasitic resistance; of course, the second linear electrode 335 can also be formed by multiple connecting parts 332 connected end to end along a straight line.

[0086] Furthermore, in one embodiment, all three types of upper electrode structures 330 may further include a third linear electrode 336, which is correspondingly disposed with at least a portion of the linear waveguide core 223, and the third linear electrode 336 is connected to one outer end of the helical electrode 331, further corresponding the upper electrode structure 330 with the waveguide core structure 220, thereby increasing the effective length of the upper electrode structure 330. In this embodiment, the third linear electrode 336 is illustrated in combination with the first type of upper electrode structure 330 described above. Figure 6 As shown, the upper electrode structure 330 includes: two spiral electrodes 331, a curved electrode 333, and two third straight electrodes 336. The length of the third straight electrodes 336 may be slightly shorter than that of the lower straight waveguide core 223.

[0087] In one embodiment, the optical phase modulation device further includes, but is not shown in the figure: an adhesive layer, a first buffer layer, and a second buffer layer; the adhesive layer is disposed between the upper cladding layer 23 and the lower electrode layer 31; the first buffer layer is disposed between the piezoelectric material layer 32 and the lower electrode layer 31; and the second buffer layer is disposed between the piezoelectric material layer 32 and the upper electrode layer 33.

[0088] Specifically, the adhesion layer can be a titanium (Ti) thin film with a thickness range of 5 nm to 30 nm to ensure good adhesion between the lower electrode layer 31 and the upper cladding layer 23; the first buffer layer and the second buffer layer are made of the same material, such as lanthanum nickel oxide (LaNiO3, abbreviated as LNO) thin film, to ensure that the piezoelectric material layer 32 has better piezoelectric performance and service life.

[0089] This embodiment also provides a phased array device, including the aforementioned plurality of optical phase modulation devices.

[0090] Optical phased array devices achieve beam deflection and continuous scanning by controlling the phase of the beam in each coherent combining unit, featuring characteristics such as no mechanical inertia, high scanning accuracy, and high resolution. Optical phase modulation devices are the core components of optical phased array devices, helping to improve the quality of the deflected beam and scanning accuracy. Phased array devices equipped with these optical phase modulation devices offer advantages such as speed, flexibility, and high efficiency.

[0091] This embodiment also provides a method for fabricating an optical phase modulation device, which includes the following steps:

[0092] Step S100: Provide substrate layer 1. Substrate layer 1 is preferably a silicon substrate, and the upper and lower surfaces of the silicon substrate are flat and uniform.

[0093] In step S200, a waveguide structure 2 is formed on one side surface of the substrate layer 1. The waveguide structure 2 includes a waveguide core layer 22 having a waveguide core structure 220. The waveguide core layer 22 includes at least two nested helical waveguide cores 221 that are connected to each other at one end.

[0094] A waveguide core layer 22 is formed on one side of the upper surface of the substrate layer 1, and a waveguide core structure 220 with a certain shape is formed to provide a unique channel path for beam propagation. The specific width and other features of the waveguide core structure 220 are as defined in the above structural embodiment, and will not be repeated here.

[0095] In step S300, a piezoelectric structure 3 is formed on the side surface of the waveguide structure 2 facing away from the substrate layer 1. The piezoelectric structure 3 includes a lower electrode layer 31, a piezoelectric material layer 32, and an upper electrode layer 33 arranged sequentially from the waveguide structure 2 outward. The upper electrode structure 330 of the upper electrode layer 33 is correspondingly arranged with at least a portion of the waveguide core structure 220 of the waveguide core layer 22. The upper electrode structure 330 includes two helical electrodes 331 with the same shape as the helical waveguide core 221, and a plurality of connecting portions 332 connecting the two helical electrodes 331.

[0096] The upper electrode structure 330 of the piezoelectric structure 3 is formed correspondingly to the waveguide core structure 220, and the width of the upper electrode structure 330 is greater than or equal to the width of the waveguide core structure 220, which helps to ensure efficient modulation of the light beam passing through the lower waveguide core structure 220.

[0097] The optical phase modulation device prepared by the above method adopts the same helical structure in the waveguide core structure 220 of the modulation part and the upper electrode structure 330 of the piezoelectric structure 3. The structure is compact and effectively shortens the device footprint, achieving a longer device length with a smaller footprint. At the same time, the two helical electrodes 331 of the upper electrode structure 330 are provided with multiple connecting parts 332 on adjacent parts, which effectively reduces the parasitic resistance of the upper electrode and thus improves the modulation speed of the device.

[0098] In one embodiment, step S200 above, forming a waveguide structure 2 on one side surface of the substrate layer 1, includes:

[0099] Step S201: A lower cladding layer 21 is formed on one side surface of the substrate layer 1.

[0100] The lower cladding layer 21 is preferably a SiO2 thin film grown by thermal oxidation, with a thickness ranging from 1 μm to 20 μm, and relatively flat upper and lower surfaces;

[0101] Step S202: An initial waveguide core layer 22a is formed on the side surface of the lower cladding layer 21 facing away from the substrate layer 1.

[0102] like Figure 7 As shown, the initial waveguide core layer 22a can be a single-layer structure of materials such as silicon nitride (Si3N4) or silicon (Si), or a stacked structure such as silicon nitride / silicon oxide / silicon nitride (Si3N4 / SiO2 / Si3N4), with a thickness ranging from 10nm to 1000nm; the refractive index (or effective refractive index) of the initial waveguide core layer 22a is greater than the refractive index of the material of the lower cladding layer 21.

[0103] Step S203: Pattern the initial waveguide core layer 22a to form a waveguide core layer 22 with a waveguide core structure 220; as shown Figure 8 and Figure 9 As shown, the waveguide core structure 220 includes two helical waveguide cores 221, a curved waveguide core 222, and two straight waveguide cores 223.

[0104] Patterning refers to the partial removal of the initial waveguide core layer 22a through photolithography, etching, and lift-off processes to obtain the desired waveguide core structure 220. The photolithography process involves exposing and developing the photoresist coated on the surface of the initial waveguide core layer 22a to form a pattern. The etching process involves using the patterned photoresist as a mask to etch the initial waveguide core layer 22a, transferring the photoresist pattern onto the initial waveguide core layer 22a to form a spiral waveguide core 221, a curved waveguide core 222, and a straight waveguide core 223. The lift-off process involves removing the remaining photoresist after etching.

[0105] Step S204, as follows Figure 10As shown, an upper cladding layer 23 is formed on the side surface of the lower cladding layer 21 that is away from the substrate layer 1, and the upper cladding layer 23 covers the waveguide core structure 220.

[0106] Step S205: Planarize the surface of the upper cladding layer 23 facing away from the substrate layer 1.

[0107] The upper cladding layer 23 is preferably SiO2 with a thickness ranging from 1μm to 5μm, and the upper and lower surfaces of the upper cladding layer 23 are flat surfaces.

[0108] In one embodiment, step S300 above, which involves forming a piezoelectric structure 3 on the surface of the waveguide structure 2 facing away from the substrate layer 1, includes:

[0109] Step S301: A lower electrode layer 31 is formed on the side surface of the waveguide structure 2 facing away from the substrate layer 1.

[0110] The lower electrode layer 31 can be a thin film of platinum (Pt) with a thickness ranging from 50 nm to 200 nm.

[0111] Step S302: An initial piezoelectric material layer 32 is formed on the side surface of the lower electrode layer 31 facing away from the substrate layer 1.

[0112] The piezoelectric material layer 32 can be lead zirconate titanate (PZT) material with a thickness ranging from 1 μm to 3 μm.

[0113] Step S303, as follows Figure 11 As shown, an initial upper electrode layer 33a is formed on the side surface of the piezoelectric material layer 32 facing away from the substrate layer 1.

[0114] The initial upper electrode layer 33a is the same as the lower electrode layer 31, and can be a thin film of metallic platinum (Pt) with a thickness ranging from 50 nm to 200 nm.

[0115] Step S304: Pattern the initial upper electrode layer 33a to form an upper electrode layer 33 with an upper electrode structure 330, referencing... Figure 1 and 2 As shown; the upper electrode layer 33 includes two spiral electrodes 331, a plurality of connecting portions 332 connecting the two spiral electrodes 331, a third straight electrode 336, an upper electrode lead 337 and an upper electrode pad 338; the upper electrode layer 33 also includes: a curved electrode 333, and / or a first straight electrode 334, and / or a second straight electrode 335.

[0116] Similarly, patterning refers to the partial removal of the initial upper electrode layer 33a through photolithography, etching, and lift-off processes to obtain the desired upper electrode structure 330. The photolithography process forms a pattern by exposing and developing the photoresist coated on the surface of the initial upper electrode layer 33a; the etching process uses the patterned photoresist as a mask to etch the initial upper electrode layer 33a, transferring the photoresist pattern onto the initial upper electrode layer 33a to form an upper electrode structure 330 including spiral electrodes 331, curved electrodes 333, and various straight electrodes, as well as upper electrode leads 337 and upper electrode pads 338; the lift-off process removes the remaining photoresist after etching.

[0117] Step S305: Pattern the initial piezoelectric material layer 32 to expose part of the lower electrode layer 31, forming the lower electrode pad 311 and the piezoelectric material layer 32.

[0118] Similarly, the patterning process here also includes partial removal processes such as photolithography, etching, and lift-off. Partial removal is performed on the initial piezoelectric material layer 32 exposed after the upper electrode layer 33 is formed, exposing a part of the lower electrode layer 31 below, forming the lower electrode pad 311.

[0119] In one embodiment, the above-described step S305, which patterns the initial piezoelectric material layer 32, further includes: partially removing the piezoelectric material layer 32 outside the area of ​​the lower electrode pad 311, so as to expose part of the upper cladding layer 23.

[0120] Depending on specific needs, such as to avoid the lower electrode layer 31 from obscuring the grating coupler, the area outside the region where the lower electrode pad 311 of the piezoelectric material layer 32 is located is partially removed to expose part of the upper cladding layer 23, thereby ensuring the operation of the grating coupler.

[0121] In one embodiment, between steps S200 and S300, an adhesion layer is formed on the side surface of the waveguide structure 2 facing away from the substrate layer 1, and the piezoelectric structure 3 is formed on the adhesion layer.

[0122] An adhesion layer is formed between the upper cladding layer 23 and the lower electrode layer 31 by deposition. The adhesion layer can be a titanium (Ti) thin film with a thickness ranging from 5 nm to 30 nm to ensure good adhesion between the lower electrode layer 31 and the upper cladding layer 23.

[0123] Between steps S301 and S302, the method further includes: setting a first buffer layer on the lower electrode layer 31, and setting an initial piezoelectric material layer 32 on the first buffer layer.

[0124] Between steps S302 and S303, a second buffer layer is provided on the side surface of the initial piezoelectric material layer 32 facing away from the substrate layer 1, and an initial upper electrode layer 33a is formed on the second buffer layer.

[0125] A first buffer layer is provided between the piezoelectric material layer 32 and the lower electrode layer 31, and a second buffer layer is provided between the piezoelectric material layer 32 and the upper electrode layer 33. The first buffer layer and the second buffer layer are made of the same material, such as lanthanum nickel oxide (LaNiO3, abbreviated as LNO) thin film, to ensure that the piezoelectric material layer 32 has better piezoelectric performance and service life.

[0126] Further functional descriptions of the above structures are the same as those of the corresponding embodiments described above, and will not be repeated here.

[0127] The above description does not provide detailed explanations of the technical aspects of each layer's patterning, etching, etc. However, those skilled in the art should understand that various technical means can be used to form layers and regions of the desired shape. Furthermore, to form the same structure, those skilled in the art can also design methods that are not entirely identical to those described above. Additionally, although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination.

[0128] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations all fall within the scope defined by the appended claims.

Claims

1. An optical phase modulating device, characterized by, The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device.

2. The optical phase modulator device of claim 1, wherein, The application relates to an optical phase modulation device.

3. The optical phase modulator device of claim 2, wherein, The application relates to an optical phase modulation device.

4. The optical phase modulator device of claim 3, wherein, The application relates to an optical phase modulation device. The application relates to an optical phase modulation device.

5. The optical phase modulator device of claim 4, wherein, The application relates to an optical phase modulation device.

6. The optical phase modulator device of claim 4, wherein, The application relates to an optical phase modulation device.

7. The optical phase modulator device of claim 4, wherein, The application relates to an optical phase modulation device. The application relates to an optical phase modulation device.

8. The optical phase modulator device according to any one of claims 5 to 7, characterized in that, The application relates to an optical phase modulation device.

9. The optical phase modulator device of claim 8, wherein, The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device.

10. A phased array device, characterized by The application relates to an optical phase modulation device.

11. A method for producing an optical phase modulation device according to any one of claims 1 to 9, characterized by, The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. The application relates to an optical phase modulation device. 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The application relates to an optical phase modulation forming a waveguide structure on one side surface of the substrate layer; the waveguide structure comprises a waveguide core layer with a waveguide core structure, the waveguide core structure comprises two helical waveguide cores which are nested and connected at one end; forming a piezoelectric structure on the side surface of the waveguide structure away from the substrate layer, the piezoelectric structure comprises, in sequence from the waveguide structure outward, a lower electrode layer, a piezoelectric material layer and an upper electrode layer, an upper electrode structure of the upper electrode layer is arranged corresponding to at least part of the waveguide core structure of the waveguide core layer, the upper electrode structure comprises two helical electrode structures which are the same as the shape of the helical waveguide cores, and a plurality of connecting portions connecting the two helical electrode structures.

12. The method of producing an optical phase modulator device according to claim 11, wherein The forming a waveguide structure on one side surface of the substrate layer comprises: forming a lower cladding layer on one side surface of the substrate layer; forming an initial waveguide core layer on the side surface of the lower cladding layer away from the substrate layer; patterning the initial waveguide core layer to form a waveguide core layer with a waveguide core structure; the waveguide core structure comprises two helical waveguide cores, a curved waveguide core and two straight waveguide cores; forming an upper cladding layer on the side surface of the lower cladding layer away from the substrate layer, the upper cladding layer covers the waveguide core structure; planarizing the side surface of the upper cladding layer away from the substrate layer.

13. The method of producing an optical phase modulator device according to claim 12, wherein The forming a piezoelectric structure on the side surface of the waveguide structure away from the substrate layer comprises: forming a lower electrode layer on the side surface of the waveguide structure away from the substrate layer; forming an initial piezoelectric material layer on the side surface of the lower electrode layer away from the substrate layer; forming an initial upper electrode layer on the side surface of the piezoelectric material layer away from the substrate layer; patterning the initial upper electrode layer to form an upper electrode layer with an upper electrode structure; the upper electrode layer comprises two helical electrodes, a plurality of connecting portions connecting the two helical electrodes, a third straight electrode, an upper electrode lead-out line and an upper electrode pad; the upper electrode layer further comprises a curved electrode, and / or a first straight electrode, and / or a second straight electrode; patterning the initial piezoelectric material layer to expose part of the lower electrode layer to form a lower electrode pad and a piezoelectric material layer.

14. The method of producing an optical phase modulator device according to claim 13, wherein The patterning the initial piezoelectric material layer further comprises: partially removing the piezoelectric material layer outside the lower electrode pad area to expose part of the upper cladding layer.

15. The method of claim 13, wherein the method further comprises: After forming the waveguide structure on one side surface of the substrate layer, and before forming the piezoelectric structure on the side surface of the waveguide structure away from the substrate layer, further comprising: forming an adhesion layer on the side surface of the waveguide structure away from the substrate layer, the piezoelectric structure is formed on the adhesion layer; After forming the lower electrode layer on the side surface of the waveguide structure away from the substrate layer, and before forming the initial piezoelectric material layer on the side surface of the lower electrode layer away from the substrate layer, further comprising: arranging a first buffer layer on the lower electrode layer, the initial piezoelectric material layer is arranged on the first buffer layer; After the initial piezoelectric material layer is formed on the side surface of the lower electrode layer away from the substrate layer, and before the initial upper electrode layer is formed on the side surface of the piezoelectric material layer away from the substrate layer, the method further comprises: disposing a second buffer layer on the side surface of the initial piezoelectric material layer away from the substrate layer, and the initial upper electrode layer is formed on the second buffer layer.

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