Semiconductor packaging film and manufacturing method thereof
By forming support members and protective wall structures in the edge region of the semiconductor packaging film, the problem of sprocket hole deformation is solved, the resistance to external stress is improved, and the stability and yield of the manufacturing process are enhanced.
Patent Information
- Application Number
- CN202480034568.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-07-18
- Filing Date
- 2024-07-01
- Publication Date
- 2025-12-19
AI Technical Summary
During the manufacturing process of semiconductor packaging films, defects such as substrate deformation or tearing can occur due to deformation of the sprocket holes and their surrounding areas, especially during high-tension conveying.
By employing a support member and a protective wall structure, the support member extends in a first direction and the protective wall is spaced apart in a second direction to form the edge region of the semiconductor packaging film. The technical problems existing in the prior art are solved by using a photoresist patterning method.
It effectively prevents deformation of the sprocket hole during high-tension transmission of semiconductor packaging film, improves manufacturing yield and production efficiency, and reduces material costs.
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Figure CN121175801A_ABST
Abstract
Description
Technical Field
[0001] This disclosure generally relates to semiconductor packaging films, and more specifically, to semiconductor packaging films and methods of manufacturing the same. Background Technology
[0002] Recently, with the development of flat panel display devices such as liquid crystal displays (LCDs), thin-film transistor LCDs (TFT LCDs) for computers, and plasma display panels (PDPs) for home use, the manufacturing industry of tape packages, as driver IC components, has also developed. These tape packages require line patterns with thinner linewidths because flat panel display devices are becoming lighter and thinner. Tape packaging is a semiconductor package using a tape substrate and can be divided into tape carrier packages (TCPs) and chip-on-film (COF) packages. TCPs have a structure in which semiconductor chips are mounted on internal leads exposed to windows on the tape substrate using an internal wire bonding (ILB) method. COF packages have a structure in which semiconductor chips are mounted on a windowless tape substrate using a flip-chip bonding method.
[0003] The tape packaging manufacturing process involves moving the tape substrate in a reel-to-reel manner, and this movement is achieved through sprocket holes formed at regular intervals in the edge regions on both sides of the tape substrate. The tape substrate moves under a predetermined tensile force, and the stress is relatively weak at the locations where the sprocket holes are formed. Therefore, defects such as tape substrate deformation or tearing may occur due to deformation of the sprocket holes.
[0004] The information disclosed in this related technology section is intended only to enhance the understanding of the background technology of this disclosure, and therefore may contain information that does not constitute prior art known to a person skilled in the art in this country. Summary of the Invention
[0005] Technical issues
[0006] The embodiments provide a semiconductor encapsulation film with relatively strong resistance to external stresses, and a method for manufacturing the semiconductor encapsulation film. For example, although a relatively high tensile force acts on the semiconductor encapsulation film when it is conveyed by a pin roller, deformation of the sprocket hole and / or its peripheral area is absent or can be minimized.
[0007] Technical solution
[0008] According to an aspect of this disclosure, a semiconductor packaging film is provided, including a base film having a sprocket hole arranged in a first direction in an edge region at the periphery of a main region, the edge region being adjacent to the main region in a second direction intersecting the first direction; a circuit line disposed in the main region; and a support member disposed on the base film, the support member being adjacent to the sprocket hole in the edge region.
[0009] The support member includes a support extending in a first direction; and protective walls connected to the support, the protective walls being spaced apart from each other and having sprocket holes disposed between the protective walls.
[0010] The protective walls can be arranged in a first direction, and each of the protective walls can extend from the support in a second direction.
[0011] The sprocket hole can be located between the support and the main area.
[0012] Each of the sprocket holes can be partially surrounded by two protective walls and a portion of the support.
[0013] The width between adjacent protective walls in the first direction can be greater than the width of one of the sprocket holes in the first direction.
[0014] Semiconductor packaging films may also include a reinforcing film attached to the lower surface of the base film. The sprocket hole can penetrate both the base film and the reinforcing film.
[0015] The reinforcing membrane may include synthetic resin materials.
[0016] Supports and protective walls may include copper.
[0017] According to another aspect of this disclosure, a semiconductor encapsulation film is provided having a first edge region and a second edge region, and a main region disposed between the first edge region and the second edge region. The semiconductor encapsulation film includes: a base film having a first sprocket hole disposed in a first direction in the first edge region and a second sprocket hole disposed in a first direction in the second edge region, the first edge region and the second edge region being spaced apart from each other in a second direction intersecting the first direction; a first support member disposed on the base film, the first support member being adjacent to the first sprocket hole in the first edge region; and a second support member disposed on the base film, the second support member being adjacent to the second sprocket hole in the second edge region, wherein the first support member includes a first support member extending in the first direction and a first protective wall connected to the first support member, the first protective walls being spaced apart from each other and the first sprocket hole being disposed between the first protective walls; and the second support member includes a second support member extending in the first direction and a second protective wall connected to the second support member, the second protective walls being spaced apart from each other and the second sprocket hole being disposed between the second protective walls.
[0018] The width between adjacent protective walls in the first direction can be approximately equal to the width of one of the sprocket holes in the first direction.
[0019] According to another aspect of this disclosure, a method for manufacturing a semiconductor packaging film is provided, the method comprising: forming a multilayer structure including a base film and a copper layer, the multilayer structure including a main region and an edge region adjacent to the main region in a first direction; forming sprocket holes arranged in the edge regions in a second direction intersecting the first direction; forming a photoresist pattern on the copper layer; and forming a support member by removing at least a portion of the copper layer using the photoresist pattern, wherein the support member includes: a support member extending in the second direction; and protective walls connected to the support member, the protective walls being spaced apart from each other and the sprocket holes being disposed between the protective walls.
[0020] The method may also include attaching the reinforcing membrane to the lower surface of the base membrane.
[0021] Supports and protective walls may include copper.
[0022] Forming the support structure may include using a photoresist pattern as a mask to wet-etch a copper layer.
[0023] The support structure can protect the sprocket hole and semiconductor packaging film from external stress.
[0024] Beneficial effects
[0025] According to this disclosure, a semiconductor packaging film with relatively strong resistance to external stress and a method for manufacturing the semiconductor packaging film can be provided.
[0026] The effects of the embodiments disclosed herein are not limited to those shown above, and may include a variety of other effects as described in the specification. Attached Figure Description
[0027] Figure 1 This is a schematic perspective view showing a semiconductor packaging film according to an embodiment of the present disclosure.
[0028] Figure 2 This is a schematic perspective view showing a semiconductor packaging film according to another embodiment of the present disclosure.
[0029] Figure 3 This is a schematic perspective view showing a semiconductor packaging film according to yet another embodiment of the present disclosure.
[0030] Figure 4 This is a schematic diagram illustrating an example of the shape that a conventional semiconductor packaging film may deform when a force is applied to it during transport.
[0031] Figure 5It is shown Figure 1 A schematic perspective view of the support member and its corresponding protective wall shown.
[0032] Figure 6 It is shown Figure 1 The flowchart illustrates an embodiment of the method for manufacturing the semiconductor packaging film.
[0033] Figure 7 Is Figure 6 The schematic cross-sectional view shown in S610 is taken along line I-I' of the semiconductor packaging film.
[0034] Figure 8 exist Figure 6 A schematic cross-sectional view of S620 taken along line I-I' of the semiconductor packaging film.
[0035] Figure 9 and Figure 10 Is Figure 6 The schematic cross-sectional view shown in S630 is taken along line I-I' of the semiconductor packaging film.
[0036] Figure 11 and Figure 12 Is Figure 6 A schematic cross-sectional view of S640 taken along line I-I' of the semiconductor packaging film.
[0037] Figure 13 This is a schematic diagram illustrating the transfer process of a semiconductor packaging film. Detailed Implementation
[0038] In the following description, embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. In the description below, only the parts necessary for understanding the operation according to the present disclosure are described, and descriptions of other parts are omitted so as not to unnecessarily obscure the subject matter of the disclosure. Furthermore, the present disclosure is not limited to the embodiments described herein, but can be implemented in various different forms. Rather, the embodiments described herein are provided to illustrate the disclosure and to fully convey the ideas of the disclosure to those skilled in the art.
[0039] Throughout this specification, when an element is referred to as “connected” or “coupled” to another element, it may be directly connected or coupled to the other element, or indirectly connected or coupled to the other element, with one or more intermediary elements inserted therebetween. The technical terminology used herein is for illustrative purposes only and is not intended to limit the implementation. It will be understood that when a component “includes” an element, unless otherwise described to the contrary, the component does not exclude another element but may further include another element. It will be understood that, for the purposes of this disclosure, “at least one of X, Y, and Z” can be understood as only X, only Y, only Z, or any combination of two or more items X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ). Similarly, for the purposes of this disclosure, “at least one selected from X, Y, and Z” can be understood as only X, only Y, only Z, or any combination of two or more items X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ).
[0040] It will be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. Therefore, without departing from the teachings of this disclosure, the “first” element discussed below may also be referred to as the “second” element.
[0041] Spatially relative terms such as “below” and “above” may be used herein to describe the relationship between one element and another, as shown in the figures. It will be understood that the spatially relative terms and the arrangements shown are intended to include, in addition to the orientations described herein and shown in the figures, different orientations of the device during use or operation. For example, if the device in the figures is flipped, an element described as “below” or “under” other elements or features will be oriented “above” other elements or features. Therefore, the term “above” can include both above and below orientations. The device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein will be interpreted accordingly.
[0042] Furthermore, embodiments of this disclosure are described herein with reference to the schematic diagrams (and intermediate structures) to allow for the anticipation of variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances. Therefore, embodiments of this disclosure should not be limited to the specific shapes of the regions shown herein, but rather include shape deviations caused, for example, by manufacturing techniques. The regions shown in the figures are schematic in nature and their shapes do not represent the actual shapes of regions of the device, and do not limit the scope of this disclosure.
[0043] Considering the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., limitations of the measurement system), the terms “about” or “approximately” as used herein include the stated value and mean within an acceptable range of deviation from the specific value as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations of the stated value, or within ±30%, 20%, 10%, or 5%.
[0044] Unless otherwise defined or implied herein, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms such as those defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and disclosure, and shall not be interpreted as having an ideal or overly formal meaning unless clearly defined herein.
[0045] Figure 1 This is a schematic perspective view showing a semiconductor packaging film according to an embodiment of the present disclosure.
[0046] refer to Figure 1 The semiconductor packaging film 100 may include a base film 110, at least one circuit line 120 formed in the main region 111, a first support member 140 and / or a second support member 150.
[0047] The base membrane 110 may have a three-dimensional structure extending along a first direction DR1, a second direction DR2 intersecting the first direction DR1, and a third direction DR3 intersecting the first direction DR1 and the second direction DR2. For example, the base membrane 110 may have a shape such as a cuboid or a regular hexahedron.
[0048] Synthetic resin materials such as polyimide (hereinafter referred to as "PI") can be primarily used as the material for the base film 110. The thickness of the base film 110 can be formed in the range of about 25 μm to about 50 μm, but this disclosure is not limited thereto.
[0049] The base film 110 can be divided in the second direction DR2 into a main region 111 for mounting semiconductor elements and at least one edge region 112 adjacent to the main region 111.
[0050] The circuit line 120 may include at least one input line 121, at least one output line 122, and window 123.
[0051] Window 123 may correspond to an area on which a semiconductor chip can be mounted. Relative to window 123, input lines 121 extend to one side, and output lines 122 may extend to the other side. In some embodiments, the number of output lines 122 may be relatively greater than the number of input lines 121. However, the embodiments are not limited to this.
[0052] The circuit line 120 can be formed primarily using a conductor with high electrical conductivity, such as copper, to a thickness of approximately 8 μm, but the implementation is not limited to this. It can also be formed using a copper layer in the main region 111 of the base film 110 (see...). Figure 7 Processes such as etching and patterning are performed on 710 (as shown) to form circuit lines 120.
[0053] The base membrane 110 may include a sprocket hole 130. The sprocket hole 130 may be formed in a third direction by punching through the base membrane 110 using a punching machine or the like.
[0054] The sprocket holes 130 may be located in the edge region 112. The sprocket holes 130 may be spaced apart from each other at a constant distance in the first direction DR1. Although the sprocket holes 130 are shown to have a rectangular shape, this disclosure is not limited thereto. For example, the sprocket holes 130 may have a circular shape, etc.
[0055] The sprocket hole 130 can be used to convey the semiconductor packaging film using a pin roller (not shown). For example, a pin of the pin roller can pass through the sprocket hole 130 in a third direction DR3. Furthermore, depending on the rotational movement of the pin roller, the semiconductor packaging film 100 can move (e.g., linearly) in opposite directions to the first direction DR1. This will be referenced... Figure 13 To provide a more detailed description.
[0056] The first support member 140 and the second support member 150 may be located at the edge region 112. The edge region 112 may be spaced apart from each other in the second direction DR2 by the width of the main region 111.
[0057] The first support member 140 and the second support member 150 may partially surround the sprocket hole 130. For example, when viewed in a plane, each of the sprocket holes 130 may have a quadrilateral shape, and the other three sides of the quadrilateral shape, except for the side adjacent to the main region 111, may be surrounded by either the first support member 140 or the second support member 150.
[0058] The first support member 140 and the second support member 150 may have a thickness of about 8 μm on the third-direction DR3, but this disclosure is not limited thereto. Various materials can be used to form the first support member 140 and the second support member 150. For example, copper can be used as the material for the first support member 140 and the second support member 150.
[0059] The first support member 140 may include a first support member 141 and a first protective wall 142. The first support member 141 may extend in a first direction DR1, and the first protective wall 142 may extend in a second direction DR2, and be connected to the first support member 141. The width of each of the sprocket holes 130 in the first direction DR1 may be less than the width between adjacent first protective walls 142 in the first direction DR1. The width of each of the sprocket holes 130 in the second direction DR2 may be less than the width of a single first protective wall 142 in the second direction DR2. Therefore, the sprocket holes 130 may be spaced apart from the first support member 140 by a certain distance.
[0060] Similarly, the second support member 140 may include a second support member 151 and a second protective wall 152. The second support member 151 may extend in the first direction DR1, and the second protective wall 152 may extend in the opposite direction of the second direction DR2, while being connected to the second support member 151. The width of each of the sprocket holes 130 in the first direction DR1 may be less than the width between adjacent second protective walls 152 in the first direction DR1. The width of each of the sprocket holes 130 in the second direction DR2 may be less than the width of a single second protective wall 152 in the second direction DR2. Therefore, the sprocket holes 130 may be spaced apart from the second support member 150 by a certain distance.
[0061] Figure 2 This is a schematic perspective view showing a semiconductor packaging film according to another embodiment of the present disclosure.
[0062] refer to Figure 2 The semiconductor packaging film 200 may include a base film 110, an adhesive layer 210, and a reinforcing film 220.
[0063] Base membrane 110 can be similar to Figure 1 The base membrane 110 is configured as shown. Repeated descriptions will be omitted below.
[0064] An adhesive layer 210 adjacent to the base membrane 110 on the third direction DR3 can be additionally attached to the base membrane 110. A reinforcing membrane 220 adjacent to the adhesive layer 210 on the third direction DR3 can be further attached to the adhesive layer 210. Each of the adhesive layer 210 and the reinforcing membrane 220 can be understood as having a three-dimensional structure extending in the first direction DR1, the second direction DR2, and the third direction DR3.
[0065] Various materials can be used to form the adhesive layer 210. For example, acrylic-based or epoxy-based adhesives can be used as materials for the adhesive layer 210. Synthetic resin materials such as PET, LCP, PTFE, PP, PE, PA-66, or PC can be used as materials for the reinforcing film 220.
[0066] The adhesive layer 210 may have a thickness of about 5 μm to about 155 μm, and the reinforcing film 220 may have a thickness of about 505 μm. However, this disclosure is not limited thereto. As the thickness of the reinforcing film 220 increases, bending of the semiconductor packaging film 200 is prevented during the fabrication of the semiconductor packaging film 200, thereby facilitating the fabrication of the semiconductor packaging film 200.
[0067] The sprocket hole 230 can be formed on the third-direction DR3 by penetrating the base film 110, adhesive layer 210 and reinforcing film 220 using a punching machine or the like. In other words, the sprocket hole 230 can be formed not only in the base film 110, but also in the adhesive layer 210 and the reinforcing film 220.
[0068] Figure 3 This is a schematic perspective view showing a semiconductor packaging film according to another embodiment of the present disclosure. Except for the sprocket hole 310, the first support member 320, and the second support member 330, the semiconductor packaging film 300 can be similar to... Figure 1 The semiconductor packaging film 100 shown is used for description. Repeated descriptions will be omitted in the following text.
[0069] refer to Figure 3 The first support member 320 may include a first support member 321 and a first protective wall 322. The first support member 321 may extend in a first direction DR1, and the first protective wall 322 may extend from the first support member 321 in a second direction DR2.
[0070] In one embodiment, the width of each of the sprocket holes 310 in the first direction DR1 can be substantially equal to the width between adjacent first protective walls 322 in the first direction DR1. The width of each of the sprocket holes 310 in the second direction DR2 can be equal to the length of one of the first protective walls 322 in the second direction DR2. Therefore, three sides of each of the sprocket holes 310 can be surrounded by the first support member 320, and the sprocket hole 310 is not spaced apart from the first support member 320.
[0071] Similarly, the second support member 330 may include a second support member 331 and a second protective wall 332. The second support member 331 may extend in the first direction DR1, and the second protective wall 332 may extend from the second support member 331 in the second direction DR2. The width of each of the sprocket holes 310 in the first direction DR1 may be equal to the width between adjacent protective walls in the second protective walls 332 in the first direction DR1. The width of each of the sprocket holes 310 in the second direction DR2 may be equal to the length of a second protective wall 332 in the second direction DR2. Therefore, three sides of each of the sprocket holes 310 may be surrounded by the second support member 330, and the sprocket holes 310 are not spaced apart from the second support member 330.
[0072] Figure 4 This is a schematic diagram illustrating an example of the shape that a conventional semiconductor packaging film may deform when a force is applied to it during transport. Figure 4 The figure shows the shape of the semiconductor packaging film based on computer simulation results.
[0073] refer to Figure 4 The diagram shows the six sprocket holes SH1 to SH6 of the base membrane 400, as well as the edge regions S1 to S6 and NF1.
[0074] Edge regions S1 to S6 and NF1 may include the first sprocket region S1 to the sixth sprocket region S6 near the first sprocket hole SH1 to the sixth sprocket hole SH6, and the region NF1 to which the force applied by the pin roller does not act directly. The first sprocket region S1 to the sixth sprocket region S6 may correspond to the region to which the pin roller applies force directly during the conveying of the base film 400.
[0075] The first sprocket region S1 to the sixth sprocket region S6 can correspond to the regions near the first sprocket hole SH1 to the sixth sprocket hole SH6, respectively. For example, the first sprocket region S1 can exist near the first sprocket hole SH1. The second sprocket region S2 can exist near the second sprocket hole SH2.
[0076] The shape of the base membrane 400 can remain undeformed in the region NF where the force applied by the pin roller does not act directly on it.
[0077] On the other hand, tension can act on the first sprocket regions S1 to the sixth sprocket regions S6, respectively, relative to the first sprocket hole SH1 to the sixth sprocket hole SH6. For example, tension can act on the first direction DR1 and the second direction DR2. Furthermore, it can be seen that the shapes of the first sprocket regions S1 to the sixth sprocket regions S6 are significantly deformed due to the tension. For example, it can be seen that the first sprocket region S1 sinks in the opposite direction to the third direction DR3 relative to the first sprocket hole SH1, or even a portion of the first sprocket region S1 sags.
[0078] Due to deformation of the first sprocket hole SH1 to the sixth sprocket hole SH6, problems such as missed film cutting may occur during the module line process. Therefore, issues such as losses corresponding to the amount of discarded base film and deterioration of the manufacturing yield of the semiconductor packaging film may arise.
[0079] To prevent these problems, tension is increased near the sprocket holes in the semiconductor packaging film; however, using additional materials (e.g., attaching a new metal reinforcement layer) can accelerate the deterioration of manufacturing yield. The goal is to improve module line process productivity by protecting the sprocket holes without increasing any additional material costs.
[0080] Figure 5 It is shown Figure 1 A schematic perspective view of the support member and the protective wall corresponding to the support member. Figure 5 The support member 500 shown can be configured as follows: Figures 1 to 3 At least one of the first support members 140 and 320 and the second support members 150 and 330 shown.
[0081] refer to Figure 5 The support member 500 may include a support member 511 and a first protective wall 512 to a fourth protective wall 515.
[0082] The support member 511 may extend in the first direction DR1, and each of the first protective walls 512 to the fourth protective walls 515 may extend in the second direction DR2 while being connected to the support member 511. The support member 511 and the first protective walls 512 to the fourth protective walls 515 may have various shapes. The shapes of the support member 511 and the first protective walls 512 to the fourth protective walls 515 are not limited to... Figure 5 The shape shown.
[0083] The first protective wall 512 to the fourth protective wall 515 may be spaced apart from each other in the first direction DR1. Furthermore, the areas where the sprocket holes are located may exist between adjacent protective walls. For example, the area 521 where the first sprocket hole is located may exist between the first protective wall 512 and the second protective wall 513, and the area 522 where the second sprocket hole is located may exist between the third protective wall 514 and the fourth protective wall 515.
[0084] In the module line process, semiconductor packaging film 100 is transferred (see...) Figure 1 In this case, the pin roller can be positioned below the support member 500 on the third direction DR3. Furthermore, the pin of the pin roller can penetrate the regions 521 and 522 of the first and second sprocket holes on the third direction DR3, where it is positioned. Thereafter, the pin roller can rotate relative to a rotation axis extending in the second direction DR2. Semiconductor packaging film 100 (see...) Figure 1 The support member 50 can move in the first direction DR1 or the opposite direction of the first direction DR1 according to the rotation of the pin roller. The support member 50 can enhance the strength of the regions 521 and 522 in which the first sprocket hole and the second sprocket hole will be located. Therefore, deformation of the first sprocket hole and the second sprocket hole located in regions 521 and 522 (in which the first sprocket hole and the second sprocket hole will be located) can be prevented.
[0085] Figure 6 It is shown Figure 1 The flowchart illustrates an embodiment of the method for manufacturing the semiconductor packaging film.
[0086] refer to Figure 1 and Figure 6 In S610, a multilayer structure comprising a base film 110 and a copper layer 710 can be formed. It should be noted that the material for forming the copper layer 710 is not limited to copper, and various other materials can be used.
[0087] In S620, the penetration base membrane 110 (see...) Figure 8 ) and copper layer 710 (see Figure 8 Simultaneously, sprocket holes 131 to 134 are formed in the edge region 112 (see...). Figure 8 ).
[0088] In S630, copper layer 710 (see...) Figure 9 A photoresist layer 910 is formed on top of the photoresist layer (see [reference]). Figure 9 Then, by irradiating the photoresist layer 910 and the photoresist patterns 911 to 918 with a laser beam (see...), Figure 10 On the surface, patterning and exposure can be performed simultaneously through development.
[0089] In S640, photoresist patterns 911 to 918 can be used (see...) Figure 11 ) is used as a mask to wet-etch copper layer 710, thereby forming protective walls 711 to 718 (see Figure 12 The photoresist pattern can then be removed. The photoresist pattern consists of a support (not shown) and at least one circuit line (not shown).
[0090] When etching the copper layer 710, a first support member 140 and a second support member 150 can be formed in the edge region 112. The first support member 140 and the second support member 150 can be disposed around the sprocket hole 130. In the manufacturing process, the first support member 140 and the second support member 150 can protect the sprocket hole 130 and / or the semiconductor packaging film 100 from external stresses (e.g., tensile forces).
[0091] Figure 7 Is Figure 6 The schematic cross-sectional view shown in S610 is taken along line I-I' of the semiconductor packaging film.
[0092] refer to Figure 1 and Figure 7 The copper layer 710 can be formed on the base film 110 to contact the base film 110 on the third-direction DR3.
[0093] The base film 110 and the copper layer 710 can have a three-dimensional shape extending in a first direction DR1, a second direction DR2, and a third direction DR3. Synthetic resin materials such as polyimide resin, acrylic resin, polyether-nitrile resin, polyether-sulfone resin, polyethylene terephthalate resin, polyethylene naphthalate resin, or polyvinyl chloride resin can be used as materials for the base film 110.
[0094] The thickness of the base film 110 can be in the range of 25 μm to 50 μm, and the thickness of the copper layer 710 can be about 8 μm. However, the implementation is not limited to this.
[0095] Although a multilayer structure including a base film 110 and a copper layer 710 is provided, a multilayer structure can be provided which is formed by adhering a copper foil (or foil) to the base film 110 and inserting an adhesive layer (not shown) therebetween.
[0096] In the embodiment, adhesive layer 210 (see Figure 2 ) can be attached to the lower surface of the base membrane 110 so as to be adjacent to the base membrane 110 on the third-direction DR3, and the reinforcing membrane 220 (see Figure 2 It can be attached to the lower surface of the adhesive layer 210 so as to be adjacent to the adhesive layer 210 on the third direction DR3.
[0097] Figure 8Is Figure 6 The schematic cross-sectional view shown in S620 is taken along line I-I' of the semiconductor packaging film.
[0098] refer to Figure 1 and Figure 8 Various methods, such as punching machines, can be used on the DR3 to penetrate the base film 110 and the copper layer 710 to form sprocket holes 131 to 134.
[0099] The sprocket holes 131 to 134 can be arranged to be spaced apart from each other at a constant distance in the first direction DR1.
[0100] In the case of conveying the semiconductor packaging film 100 in the module line process, the pin roller can be positioned in the opposite direction to the third direction DR3 of the base film 110. Furthermore, the pins of the pin roller can penetrate sprocket holes 131 to 134 respectively in the third direction. Subsequently, the base film 110 can move in the first direction DR1 or in the opposite direction to the first direction DR1 depending on the rotation of the pin roller relative to the rotation axis extending in the second direction DR2.
[0101] Figure 9 and Figure 10 Is Figure 6 The schematic cross-sectional view shown in S630 is taken along line I-I' of the semiconductor packaging film.
[0102] refer to Figure 1 and Figure 9 A photoresist layer 910 can be formed on the copper layer 710 to be adjacent to the copper layer 710 in a third direction DR3. The photoresist layer 910 can have a three-dimensional shape extending in a first direction DR1, a second direction DR2, and a third direction DR3. The thickness of the photoresist layer 910 can be about 4 μm, but this disclosure is not limited thereto.
[0103] refer to Figure 1 and Figure 10 This can be achieved by irradiating the photoresist layer 910 with a laser beam (see...). Figure 9 Patterning and exposure are performed simultaneously. Afterwards, photoresist patterns 911 to 918 can be formed through a developing process. Various materials, such as sodium carbonate (Na2CO3), can be used as developing agents. The first support member 140 (see...) Figure 1 ) and the second support member 150 (see Figure 1 It can be formed in the portion of the copper layer 710 that overlaps with the photoresist patterns 911 to 918.
[0104] Figure 11 and Figure 12 Is Figure 6 The schematic cross-sectional view shown in S640 is taken along line I-I' of the semiconductor packaging film.
[0105] refer to Figure 1 and Figure 11 The copper layer 710 can be removed. In one embodiment, photoresist patterns 911 to 918 can be used as a mask to wet-etch the copper layer 710. Through wet etching, portions of the copper layer 710 that do not overlap with the photoresist patterns 911 to 918 can be removed. Therefore, the first support member 140 and the second support member 150, as well as circuit lines, can be formed. Figure 11 The protective walls 711 to 718 are shown in the figure.
[0106] In implementation methods, the etchant used to etch Cu, which is a metal, can be primarily used as the etchant. Examples include etchants using ferric chloride as the main element, etchants using copper chloride as the main element, and mixtures of sulfuric acid and hydrogen peroxide.
[0107] refer to Figure 1 and Figure 12 It can remove photoresist patterns 911 to 918 (see...) Figure 10 Additionally, tin plating can be applied to the protective walls 711 to 718 and the support member (not shown). The tin plating layer can surround the first support member 140 and the second support member 150, including the protective walls 711 to 718, as well as the circuit lines.
[0108] According to embodiments of this disclosure, the first support member 140 and the second support member 150 can be formed by etching the copper layer 710 without using any additional materials, thereby maintaining the yield of the semiconductor packaging film 100 while protecting the sprocket holes 131 to 134.
[0109] Figure 13 This is a schematic diagram illustrating the transfer process of a semiconductor packaging film.
[0110] refer to Figure 13 The image shows a semiconductor packaging film 100 and a pin roller 1310.
[0111] The pin roller 1310 may include pins. For ease of explanation, in... Figure 13 The first pin 1311 to the fourth pin 1314 are shown.
[0112] The first pin 1311 to the fourth pin 1314 can penetrate the sprocket hole. For example, the first pin 1311 can penetrate the first sprocket hole 131, and the second pin 1312 can penetrate the second sprocket hole 132. The third pin 1313 can penetrate the third sprocket hole 133, and the fourth pin 1314 can penetrate the fourth sprocket hole 134.
[0113] Subsequently, the pin roller 1310 can be rotatably moved relative to the rotation axis extending in the second direction DR2 in the first direction DR1 or in the opposite direction of the first direction DR1. Therefore, the semiconductor packaging film 100, engaging with the first pins 1311 to the fourth pins 1314, can move through the first sprocket holes 131 to the fourth sprocket holes 134. For example, the semiconductor packaging film 100 can move linearly in the first direction DR1 or in the opposite direction of the first direction DR1. During the movement of the semiconductor packaging film 100, tension can act near the first sprocket holes 131 to the fourth sprocket holes 134.
[0114] In the absence of the first protective wall 711 to the eighth protective wall 718 and the support member in the semiconductor packaging film 100, the shape of the first sprocket hole 131 to the fourth sprocket hole 134 may be deformed due to tension.
[0115] On the other hand, according to embodiments of this disclosure, in the semiconductor packaging film 100 (see...) Figure 1 The presence of a first protective wall 711 to an eighth protective wall 718 and a support member enhances the strength of the first sprocket holes 131 to the fourth sprocket holes 134 and adjacent portions. For example, the presence of a first protective wall 711, a second protective wall 712, and a support member further strengthens the area near the first sprocket hole 131. This enhanced strength prevents deformation of the shape of the first sprocket holes 131 to the fourth sprocket holes 134.
[0116] The above description is an example of the technical features of this disclosure, and those skilled in the art to which this disclosure pertains will be able to make various modifications and variations. Therefore, the embodiments described above can be implemented individually or in combination with each other.
[0117] The embodiments disclosed herein are not intended to limit the technical spirit of this disclosure, but rather to describe it, and the scope of the technical spirit of this disclosure is not limited by these embodiments. The scope of protection of this disclosure should be interpreted by the following claims, and it should be understood that all technical spirit within the equivalent scope is included within the scope of this disclosure.
Claims
1. Semiconductor packaging film, including: The base membrane has a plurality of sprocket holes arranged in a first direction in an edge region at the periphery of the main region, the edge region being adjacent to the main region in a second direction intersecting the first direction; The circuit lines are located in the main area; as well as A support member is disposed on the base membrane, the support member being adjacent to the plurality of sprocket holes in the edge region, wherein The support member includes: The support extends in the first direction; as well as Multiple protective walls are connected to the support member, and The plurality of protective walls are spaced apart from each other, and the plurality of sprocket holes are disposed between the plurality of protective walls.
2. The semiconductor packaging film according to claim 1, wherein... The plurality of protective walls are arranged in the first direction, and Each of the plurality of protective walls extends from the support member in the second direction.
3. The semiconductor packaging film according to claim 2, wherein, The plurality of sprocket holes are disposed between the support and the main area.
4. The semiconductor packaging film according to claim 1, wherein, Each of the plurality of sprocket holes is partially surrounded by two of the plurality of protective walls and a portion of the support member.
5. The semiconductor packaging film according to claim 1, wherein, The width between adjacent protective walls in the first direction is greater than the width of one of the plurality of sprocket holes in the first direction.
6. The semiconductor packaging film according to claim 1, further comprising: A reinforcing membrane is attached to the lower surface of the base membrane. The plurality of sprocket holes penetrate the base membrane and the reinforcing membrane.
7. The semiconductor packaging film according to claim 6, wherein, The reinforcing membrane comprises a synthetic resin material.
8. The semiconductor packaging film according to claim 1, wherein, The support and the plurality of protective walls comprise copper.
9. A semiconductor encapsulation film having a first edge region and a second edge region, and a main region disposed between the first edge region and the second edge region, the semiconductor encapsulation film comprising: The base membrane has a plurality of first sprocket holes arranged in a first direction in the first edge region and a plurality of second sprocket holes arranged in the first direction in the second edge region, the first edge region and the second edge region being spaced apart from each other in a second direction intersecting the first direction; A first support member is disposed on the base membrane, and the first support member is adjacent to the plurality of first sprocket holes in the first edge region; as well as A second support member is disposed on the base membrane, and the second support member is adjacent to the plurality of second sprocket holes in the second edge region, wherein The first support member includes a first support extending in the first direction and a plurality of first protective walls connected to the first support, the plurality of first protective walls being spaced apart from each other and the plurality of first sprocket holes being disposed between the plurality of first protective walls. The second support member includes a second support extending in the first direction and a plurality of second protective walls connected to the second support, the plurality of second protective walls being spaced apart from each other and the plurality of second sprocket holes being disposed between the plurality of second protective walls.
10. The semiconductor packaging film according to claim 1, wherein, The width between adjacent protective walls in the first direction is substantially equal to the width of one of the plurality of sprocket holes in the first direction.
11. A method for manufacturing a semiconductor packaging film, the method comprising: A multilayer structure comprising a base film and a copper layer is formed, the multilayer structure comprising a main region and an edge region adjacent to the main region in a first direction; A plurality of sprocket holes are formed in the edge region in a second direction intersecting the first direction; A photoresist pattern is formed on the copper layer; as well as The support member is formed by removing at least a portion of the copper layer using the photoresist pattern, wherein The support member includes: The support member extends in the second direction; as well as Multiple protective walls are connected to the support member, and The plurality of protective walls are spaced apart from each other, and the plurality of sprocket holes are disposed between the plurality of protective walls.
12. The method of claim 11, wherein The plurality of protective walls are arranged in the second direction, and Each of the plurality of protective walls extends from the support member in the first direction.
13. The method according to claim 12, wherein, The plurality of sprocket holes are disposed between the support and the main region.
14. The method according to claim 11, wherein, Each of the plurality of sprocket holes is partially surrounded by two of the plurality of protective walls and a portion of the support member.
15. The method according to claim 11, wherein, The width between adjacent protective walls in the second direction is greater than the width of one of the plurality of sprocket holes in the second direction.
16. The method of claim 11, further comprising: The reinforcing membrane is attached to the lower surface of the base membrane. The plurality of sprocket holes penetrate the base membrane and the reinforcing membrane.
17. The method according to claim 16, wherein, The reinforcing membrane comprises a synthetic resin material.
18. The method according to claim 11, wherein, The support and the plurality of protective walls comprise copper.
19. The method according to claim 11, wherein, Forming the support member includes wet etching the copper layer using the photoresist pattern as a mask.
20. The method according to claim 12, wherein, The support member protects the plurality of sprocket holes and the semiconductor encapsulation film from external stress.