Electrostatic chuck and related method

Abstract

A device may include an additively manufactured monolith structure including an insulating body and at least one conductive region positioned in the insulating body. The additively manufactured monolith structure does not include a bonded component between the insulating body and the at least one conductive element. The additively manufactured monolith structure may further include at least one conduit that is free of any material. The insulating body may include a ceramic material and the at least one conductive region may include a metal material such that the ceramic material and the metal material are co-deposited layer by layer to form the additively manufactured monolith structure.

Description

[0001] Cross-reference of related applications

[0002] This application claims the benefit and priority of U.S. Provisional Application No. 63 / 467,041, filed May 17, 2023, the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0003] This disclosure relates to electrostatic chucks, and more specifically, to electrostatic chucks capable of withstanding high temperatures and methods of manufacturing the same. Background Technology

[0004] Electrostatic chucks are used to hold and support substrates in a fixed position using electrostatic forces during semiconductor processes. Conventional chucks are constructed based on the fabrication of individual components and the subsequent bonding of these components together. Due to bonding failures and the corresponding loss of mechanical and structural integrity, conventional chucks exhibit poor performance at high temperatures. The performance of conventional chucks is also limited by disproportionate heat loss and the placement of heating elements within the chuck. Summary of the Invention

[0005] Some embodiments relate to an electrostatic chuck comprising an additively manufactured monolithic structure including an insulating body and at least one conductive element positioned within the insulating body.

[0006] In some embodiments, the additively manufactured monolithic structure does not include a bonding assembly between the insulating body and at least one conductive element.

[0007] In some embodiments, the additively manufactured monolithic structure further includes at least one conduit, wherein the at least one conduit is defined by an insulating body and contains no material.

[0008] In some embodiments, the at least one conduit is a heat-shielding structure within an insulating body. In some embodiments, the heat-shielding structure extends along with and is adjacent to the outer periphery of the insulating body.

[0009] In some embodiments, the at least one conduit is at least one of a gas channel, a liquid channel, a connection hole, a screw hole, a perforation, a gap, or any combination thereof.

[0010] In some embodiments, the insulating body comprises a ceramic material, and at least one conductive element comprises a metallic material.

[0011] In some embodiments, an electrostatic chuck is provided in which ceramic and metallic materials are deposited layer by layer to form a monolithic additively manufactured structure.

[0012] In some embodiments, the insulating body comprises at least one of aluminum oxide, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof.

[0013] In some embodiments, the at least one electrically conductive element comprises at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilicide, or any combination thereof.

[0014] In some embodiments, the insulating body has a resistivity of no less than about 10 11 Ohm-cm.

[0015] In some embodiments, the at least one electrically conductive element comprises at least one electrode configured to generate an electrostatic field in response to an electrical charge.

[0016] In some embodiments, the at least one electrically conductive element extends from a second side of the insulating body toward a first side of the insulating body such that the at least one electrode extends substantially along a plane within the insulating body adjacent to the first side.

[0017] In some embodiments, the at least one electrode comprises a plurality of electrodes comprising individual electrically conductive paths extending through the insulating body from a second side of the insulating body and toward a first side of the insulating body such that the plurality of electrodes extends substantially along a plane within the insulating body adjacent to the first side.

[0018] In some embodiments, the at least one electrically conductive element further comprises at least one heating element configured to provide thermal energy to the additively manufactured monolithic structure.

[0019] In some embodiments, the at least one electrically conductive element comprises a plurality of heating elements comprising individual electrically conductive paths extending through the insulating body from a second side of the insulating body to different regions of the additively manufactured monolithic structure to provide localized thermal energy to the insulating body.

[0020] In some embodiments, the plurality of heating elements are positioned below at least one electrode of the insulating body.

[0021] In some embodiments, the plurality of heating elements are further positioned adjacent to a sidewall within the insulating body.

[0022] In some embodiments, the plurality of heating elements are arranged in a horizontal direction and / or a vertical direction within the insulating body to achieve a desired thermal uniformity at the first side of the insulating body.

[0023] In some embodiments, the at least one electrically conductive element includes a temperature measurement probe, a thermocouple, a resistance temperature detector, or other temperature sensing device.

[0024] In some embodiments, the at least one electrically conductive element includes a plurality of temperature measurement probes, where each of the plurality of temperature measurement probes includes a separate electrically conductive path that extends through the insulating body from the second side to the first side of the insulating body.

[0025] In some embodiments, the at least one electrically conductive element includes a dummy structure to provide more uniform thermal, electrical, or physical properties of the electrostatic chuck.

[0026] In some embodiments, the at least one electrically conductive element includes a plurality of electrodes, a plurality of heating elements, and a plurality of temperature measurement probes, each of the plurality of electrodes, the plurality of heating elements, and the plurality of temperature measurement probes having a separate electrically conductive path that extends through the insulating body from the second side toward the first side of the insulating body.

[0027] In some embodiments, the at least one conduit includes a lift pin hole defined by the insulating body.

[0028] In some embodiments, the at least one conduit includes a backside gas delivery hole defined by the insulating body.

[0029] In some embodiments, the at least one conduit includes a dummy structure defined by the insulating body, the dummy structure configured to provide uniform thermal, electrical, or physical properties of the electrostatic chuck.

[0030] In some embodiments, the at least one conduit includes a gas channel defined by the insulating body.

[0031] In some embodiments, the at least one conduit includes at least one of a mounting fitting, a bolt hole, a flange, a connector, an alignment feature, an optical path, or any combination thereof.

[0032] In some embodiments, the first side of the insulating body includes a structured pattern including a plurality of gas channels.

[0033] In some embodiments, the additively manufactured monolithic structure further includes at least one gas channel disposed on the first side of the insulating body.

[0034] In some embodiments, the first side of the insulating body includes a structured pattern including a plurality of protuberances.

[0035] In some embodiments, the plurality of protuberances are formed by a coating applied to the first side of the insulating body.

[0036] In some embodiments, the coating is polished to provide at least one of improved flatness, improved surface finish, improved density, improved precision of the insulating layer thickness between the at least one conductive element and the first side, or any combination thereof.

[0037] In some embodiments, the coating further comprises at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear resistance layer, or any combination thereof.

[0038] Some embodiments relate to a method comprising one or more of depositing a ceramic material to form an insulating body, and depositing a metal material to form at least one conductive element positioned in the insulating body. In some embodiments, the ceramic material and the metal material are co-printed layer-by-layer to form an additively manufactured monolithic structure.

[0039] In some embodiments, the method further comprises applying a coating onto a top surface of the insulating body.

[0040] In some embodiments, the method further comprises at least one of forming a plurality of protrusions on a top surface of the insulating body, polishing a top surface of at least a portion of the plurality of protrusions, forming a coating on at least one of a top surface of at least a portion of the plurality of protrusions, a top surface of the insulating body, or any combination thereof, or any combination thereof.

[0041] In some embodiments, the coating is at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear resistance layer, or any combination thereof.

[0042] Some embodiments relate to a method comprising depositing a ceramic material to form an insulating body, depositing a metal material to form at least one conductive element positioned in the insulating body, the conductive element extending from a second side to a first side of the insulating body, wherein the ceramic material and the metal material are co-printed layer-by-layer to form an additively manufactured monolithic structure.

[0043] In some embodiments, the method further comprises applying a coating onto the first side of the insulating body, the coating comprising at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown prevention layer, a mechanical wear resistance layer, or any combination thereof.

[0044] In some embodiments, the method further comprises polishing the coating on the first side of the insulating body, the coating being polished to provide at least one of improved flatness, improved surface finish, improved density, improved precision of the insulating layer thickness between the at least one conductive element and the first side, or any combination thereof.

[0045] In some embodiments, the method further comprises forming a structured pattern on the first side of the insulating body, wherein the structured pattern comprises a plurality of protrusions. Attached Figure Description

[0046] This disclosure can be understood more fully by considering the following description of various illustrative embodiments in conjunction with the accompanying drawings.

[0047] Figure 1 This is a flowchart of a method for forming an electrostatic chuck according to some embodiments.

[0048] Figure 2 This is a perspective view of a non-limiting embodiment of a device according to some embodiments.

[0049] Figure 3 This is a cross-sectional side view of a non-limiting embodiment of a device according to some embodiments.

[0050] Figure 4 This is an exploded view of a non-limiting embodiment of an electrostatic chuck.

[0051] Figures 5 to 6 It is included Figure 4 Schematic diagrams of different layers in a non-limiting embodiment of the electrostatic chuck shown.

[0052] Figure 7 yes Figure 4 A cross-sectional side view of an electrostatic chuck.

[0053] While this disclosure is adaptable to various modifications and alternatives, specific details thereof have been shown by way of example in the drawings and will be described in detail. However, it should be understood that it is not intended to limit aspects of this disclosure to the specific illustrative embodiments described. Rather, it is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of this disclosure. Detailed Implementation

[0054] Other objects and advantages of this disclosure will become apparent from the following description taken in conjunction with the accompanying drawings, amidst the disclosed benefits and improvements. Detailed embodiments of this disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative and may be implemented in various forms. Furthermore, each example given with respect to the various embodiments of this disclosure is intended to be illustrative and not restrictive.

[0055] Throughout this specification and claims, unless the context clearly indicates otherwise, the following terms shall have the meaning explicitly associated with this document. The phrases “in one embodiment,” “in an embodiment,” and “in some embodiments” as used herein do not necessarily refer to the same embodiment, although they may refer to the same embodiment. Furthermore, the phrases “in another embodiment” and “in some other embodiments” as used herein do not necessarily refer to different embodiments, although they may refer to different embodiments. All embodiments of this disclosure are intended to be combined without departing from the scope or spirit of this disclosure.

[0056] As used herein, the term "based on" is not exclusive, and allows for additional factors based on which something is done, unless the context clearly dictates otherwise. Also, throughout the specification, "a" and "an" include plural references. "In" includes "on" and "in."

[0057] As used herein, the term "between" does not necessarily require immediate placement of one element relative to another. In general, this term refers to a configuration in which something is sandwiched by two or more other things. At the same time, the term "between" can describe something that is immediately adjacent to two relative things. Thus, in any one or more embodiments disclosed herein, a particular structural component that is disposed between two other structural elements can be:

[0058] directly disposed between both of the two other structural elements, such that the particular structural component is in direct contact with both of the two other structural elements;

[0059] disposed immediately adjacent to only one of the two other structural elements, such that the particular structural component is in direct contact with only one of the two other structural elements;

[0060] disposed indirectly adjacent to only one of the two other structural elements, such that the particular structural component is not in direct contact with only one of the two other structural elements, and another element collocates the particular structural component and one of the two other structural elements;

[0061] indirectly disposed between both of the two other structural elements, such that the particular structural component is not in direct contact with both of the two other structural elements, and other features can be disposed therebetween; or

[0062] any combination thereof.

[0063] As used herein, the term "embedded" refers to a first material distributed throughout and / or within a second material. In some embodiments, the term refers to a first material partially encapsulated in a second material. In some embodiments, the term refers to a first material completely encapsulated in a second material. In some embodiments, the term refers to a first material that is not exposed to an external environment.

[0064] As used herein, the term "deposition" refers to the formation of a 3D object during additive manufacturing by applying one or more materials (e.g., filaments). The one or more materials are added one layer at a time, and a fusing application is used to bond the layers to form a monolithic structure. In some embodiments, the term "deposition" can be a disposition, a printing, a co-printing, a jetting, an extruding, or the like.

[0065] Conventional chucking pads require a bonding agent to maintain structural integrity between different components of the conventional chucking pad (e.g., an insulating layer, a conductive layer, a dielectric layer, etc.). The operable temperature range of a conventional chucking pad can be limited, among other things, by the bonding agent, which degrades or otherwise deteriorates at high temperatures. Thus, conventional chucking pads with these bonding agents are not suitable for use at high temperatures, as a corresponding loss of structural integrity and mechanical integrity of the conventional chucking pad is observed when the bonding agent degrades or deteriorates.

[0066] Embodiments disclosed herein overcome at least the problems of conventional chucking pads by, among other things, providing electrostatic chucking pads that include a monolithic structure that does not require or include any bonding agents after the manufacturing process of the electrostatic chucking pad is complete. In some cases, the monolithic structure can include conduits. Such conduits present in the monolithic structure cannot be achieved with conventional manufacturing techniques. Additionally, removing the bonding agents or more generally removing bonding components provides a number of advantages, including expanding the operable temperature range of the electrostatic chucking pad that can be used. For example, the electrostatic chucking pads disclosed herein are capable of operating at high temperatures, such as, for example but not limited to, temperatures of 500 °C or higher, without any corresponding loss of structural and / or mechanical integrity. As used herein, the term “bonding components” refers to bonds other than those formed via the additive manufacturing process. For example, in some embodiments, the term “bonding components” does not refer to bonds formed via the additive manufacturing process.

[0067] At least another advantage of the electrostatic chucking pads disclosed herein is that the electrostatic chucking pads can maintain thermal uniformity across a wafer surface to a wafer edge when operated at high temperatures. Conventional chucking pads typically suffer from disproportionate non-uniform heat loss across a wafer surface and are unable to provide sufficient heating power at the wafer edge. Embodiments overcome at least the challenges of conventional chucking pads by providing electrostatic chucking pads that can be configured to compensate for temperature non-uniformities in the electrostatic chucking pads. For example, in some embodiments, the electrostatic chucking pads can be configured via additive manufacturing to include one or more thermally conductive elements at the location of the insulating body that compensate for the aforementioned temperature non-uniformities. At least another additional advantage of the electrostatic chucking pads disclosed herein is that the electrostatic chucking pads minimize or avoid metal contamination due to impurity diffusion at high temperatures.

[0068] Accordingly, various embodiments of the present disclosure provide electrostatic chucking pads formed by additive manufacturing and methods of forming electrostatic chucking pads by additive manufacturing.

[0069] Some embodiments relate to an electrostatic chuck comprising an insulating body and at least one electrically conductive element. The at least one electrically conductive element is formed of one or more metallic materials and can be positioned (e.g., embedded) within the insulating body to provide thermal uniformity across a surface of the electrostatic chuck and / or to provide an optimal size for emitting an electric field. In some embodiments, the insulating body comprises a ceramic material. In some embodiments, the ceramic material is configured as an insulating layer positioned between two or more electrically conductive elements. In some embodiments, the ceramic material is configured as a dielectric layer positioned between at least one electrode and a top surface of the insulating body. In some embodiments, the electrostatic chuck further comprises a dielectric coating positioned on a top surface of the insulating body, a top surface of a plurality of bumps, or any combination thereof. In some embodiments, the electrostatic chuck further comprises a plurality of bumps positioned on a top surface of the insulating body, wherein the plurality of bumps are formed of a dielectric material. Additionally, additive manufacturing processes can provide for the deposition of droplets that control the thickness and size of the material, such that the ceramic material deposited between electrically conductive elements (e.g., electrodes, heating elements, etc.) can serve as a dielectric layer and can also be deposited in a top region to serve as a bump structure. In some embodiments, the electrostatic chuck is embedded with one or more features that are positioned and sized to operate at the high temperature, to be formed during a single application (e.g., a single print), or any combination thereof.

[0070] Some embodiments relate to a device comprising an electrostatic chuck comprising an insulating body and at least one electrically conductive element. In some embodiments, the electrostatic chuck is an additively manufactured monolithic structure. In some embodiments, the additively manufactured monolithic structure does not include a joint assembly between the insulating body and the at least one electrically conductive element. In this regard, the electrostatic chuck can be capable of operating at a temperature of 500 °C or above while maintaining thermal uniformity across a surface of the electrostatic chuck. The degree to which the monolithic structure maintains thermal uniformity can be predetermined by the arrangement of the at least one electrically conductive element positioned in the insulating body. In some embodiments, after the electrostatic chuck is fabricated by additive manufacturing, the electrostatic chuck can be subjected to a deposition process, such as an atomic layer deposition (ALD) process or a thermal ALD process, in which one or more surfaces of the electrostatic chuck are coated with one or more layers. In some embodiments, the deposition process is sufficient to coat all exposed surfaces of the additively manufactured device.

[0071] The additively manufactured electrostatic chuck can not include a bonding assembly. In this regard, the electrostatic chuck can be operated at temperatures of 500 °C or above without compromising the integrity of the monolithic structure since the monolithic structure of the electrostatic chuck does not contain a bonding assembly within the monolithic structure. In some embodiments, the additively manufactured electrostatic chuck also does not include a bonding assembly between the ceramic assembly and the metal assembly. In some embodiments, the additively manufactured electrostatic chuck includes one or more layers formed by selective droplet deposition, where the small droplets are selectively bonded to form the one or more layers resulting in the formation of the monolithic structure. During the formation of the electrostatic chuck, the one or more layers are bonded to adjacent layers by selectively applying a fusing process such that the adhesive material is burned off as a result of the fusing process resulting in a monolithic structure including a ceramic material, a metal material, or a combination thereof. Thus, the electrostatic chuck can be formed such that the monolithic structure does not contain a bonding assembly existing between the one or more layers. In some embodiments, the electrostatic chuck can not include a bonding assembly between the insulating body and the at least one electrically conductive region. In some embodiments, the process applied in the deposition process can include, but is not limited to, at least one of heat, pressure, electrical process, ultrasonic vibration, laser, or any combination thereof.

[0072] Although the electrostatic chuck can be operated at temperatures of 500 °C or higher, in some embodiments, the temperature range in which the electrostatic chuck is used can be between 0 to 1000 °C, or any range or sub-range therebetween. For example, in some embodiments, the operating temperature can be 100 to 1000 °C, 100 to 650 °C, 200 to 650 °C, 300 to 650 °C, 400 to 650 °C, 500 to 650 °C, 100 to 550 °C, 200 to 550 °C, 300 to 550 °C, 400 to 550 °C, 500 to 550 °C, 100 to 450 °C, 200 to 450 °C, 300 to 450 °C, or 400 to 450 °C. In some embodiments, the operating temperature of the electrostatic chuck can be 500 °C or higher. For example, in some embodiments, the electrostatic chuck is configured to operate at temperatures of 500 °C to 1000 °C, or within any range or sub-range therebetween.

[0073] In various embodiments according to the present disclosure, the electrostatic chuck includes a monolithic structure formed by additive manufacturing, forming a single structure having a monolithic configuration. In some cases, the monolithic structure can be a multi-layer structure, each layer of the multi-layer structure formed of a different material or combination of materials. Additionally, each layer of the multi-layer monolithic structure can include different elements or features. For example, an intermediate layer can include a heater element, another layer can include at least one electrode, and another layer includes a conduit or void without material. A top layer of the electrostatic chuck can include a bump and / or a dielectric layer, while a bottom layer can include electrical contacts for facilitating electrical connection to the electrostatic chuck. Each of these layers of the multi-layer monolithic structure can be formed using an additive manufacturing process. In some embodiments, each layer of the electrostatic chuck is formed in a single additive manufacturing process (i.e., a single print), such that there is no distinct interface between the different layers, but rather a gradient of the first material or combination of materials transitioning to the second material or combination of materials.

[0074] In some embodiments, the monolithic structure is formed by additive manufacturing and can include one or more regions formed of one or more materials. Each of the one or more materials can be selected, at least in part, according to its ability to withstand high temperatures without compromising the structural integrity of the monolithic structure, its resistance to mechanical deformation, its lack of significant impact on the ability of the monolithic structure to provide thermal uniformity at various operating temperatures, and other similar characteristics. In some embodiments, the monolithic structure comprises an additively manufactured structure formed of a first material forming a body and deposition of a second material forming one or more electrically conductive elements within the body. Each of the first and second materials can be selected, in part, according to their thermal properties and whether such materials are capable of operating at high temperatures once the monolithic structure is formed. Additionally, in some embodiments, the first and second materials are co-printed by additive manufacturing. In some embodiments, the first and second materials can be applied in successive layers, with each layer including the first material, the second material, or both, to form a monolithic configuration of the monolithic structure and thus not manufactured separately and joined together after manufacturing (e.g., post-fabrication). In some embodiments, the monolithic structure comprises a three-dimensional (“3D”) structure formed of one or more materials selectively deposited during deposition (e.g., co-printing) of each layer to form a first region and a second region positioned in or embedded within the first region. In this regard, the first and second materials can be co-printed to form the monolithic structure, with the first material forming an insulating body and the second material forming at least one electrically conductive element distributed on and / or within the insulating body based on one or more operating parameters of the monolithic structure. In an exemplary embodiment, the at least one electrically conductive element can include a heating element distributed across the insulating body and / or along a sidewall of the monolithic structure. In another embodiment, the at least one electrically conductive element can include at least one heating element distributed within the insulating body.

[0075] The monolithic structure produced from the additive manufacturing process does not include any joining components, such that the monolithic structure is a single structure having a unitary construction. In some embodiments, the monolithic structure includes an additive manufactured structure that cannot be constructed through machining. In some embodiments, the monolithic structure includes an additive manufactured structure that does not include any seams, welded joints, brazed joints, or any combination thereof. Other techniques for forming monolithic structures, such as those formed with joining components, seams, welded joints, brazed joints, and other similar methods, do not provide a monolithic structure having a unitary construction and are also unable to operate at such high temperatures. Additionally, while there are other techniques for forming semiconductor process tool components, such as through sintering or glass fritting, these techniques do not form a monolithic structure as described in the present disclosure, but rather involve separate and / or independent formation of components and subsequent joining of the components together after manufacturing.

[0076] The additive manufacturing can include selectively co-printing a ceramic material and a metal material to form the monolithic structure. In some embodiments, the monolithic structure includes a ceramic component formed from the ceramic material and a metal component formed from the metal material. In some embodiments, the ceramic component includes an insulating body and the metal component includes at least one electrically conductive element positioned in the insulating body. In some embodiments, the at least one electrically conductive element can be arranged in predetermined locations of the monolithic structure. In some embodiments, for example, an electrostatic chuck can include a thermally conductive element that forms a thermally conductive zone in the insulating body and is arranged to provide thermal uniformity from an edge of the electrostatic chuck to an edge of the wafer and to the wafer. In another example, a plurality of thermally conductive elements can include a sidewall heater to improve thermal capabilities of an edge of the electrostatic chuck.

[0077] In some embodiments, the at least one electrically conductive element can include a size based on desired operational characteristics of the electrostatic chuck. For example, the at least one electrically conductive element can include a size for optimizing thermal uniformity of the electrostatic chuck based on a size of the insulating body. Accordingly, the size and arrangement of the insulating body and the at least one electrically conductive element of the electrostatic chuck are not intended to be limiting and can include any of a plurality of sizes and arrangements based on applied, operational characteristics (e.g., thermal characteristics, clamping force, electrical resistance, and the like), or any combination thereof.

[0078] An electrostatic chuck can be configured for securing a substrate to a side of the electrostatic chuck by applying an electrostatic force. The electrostatic force can be sufficient to secure the substrate to a surface of the electrostatic chuck. That is, in some embodiments, the substrate can be secured to the electrostatic chuck without applying any mechanical force, e.g., such as but not limited to, a mechanical clamp. In some embodiments, a mechanical force can be applied to secure the substrate (e.g., via a mechanical clamp). The substrate secured to the electrostatic chuck is not particularly limited and can include, for example but not limited to, a wafer, a workpiece, or any combination thereof. In some embodiments, the substrate comprises a semiconductor wafer. In some embodiments, the substrate comprises a silicon wafer. It will be appreciated that other substrates can be used herein without departing from the scope of the disclosure.

[0079] In some embodiments, the electrostatic chuck comprises an insulating body. The insulating body can comprise a ceramic component. In some embodiments, the insulating body can comprise a ceramic substrate. In some embodiments, the insulating body can be formed of a ceramic material. The ceramic material can comprise at least one of aluminum oxide, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof.

[0080] In some embodiments, the electrostatic chuck comprises at least one electrically conductive element. The at least one electrically conductive element can comprise a metallic component. In some embodiments, the metallic component can be formed of a metallic material. The metallic material can comprise at least one of aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilicide, or any combination thereof. In some embodiments, the metallic component can comprise 17-4PH stainless steel, 316L stainless steel, other alloys, or any combination thereof.

[0081] The at least one electrically conductive element can include a heating element, an electrode, a temperature measurement probe, an electrical charge dissipation component (e.g., a ground component), or any combination thereof. The heating element is configured to provide thermal energy to the insulating body. In some embodiments, the at least one electrically conductive element can include a plurality of heating elements having separate electrically conductive paths extending through the insulating body from the second side of the insulating body to different regions of the insulating body to provide localized thermal energy to the insulating body and the top surface. In some embodiments, the plurality of heating elements are arranged in a monolithic structure to control the temperature of the electrostatic chuck. In some embodiments, for example, the electrostatic chuck can include a monolithic structure having a first side, a second side, and at least one sidewall, and one or more thermally conductive regions embedded within the monolithic structure. In some embodiments, the one or more thermally conductive regions are positioned between the first side and the second side of the electrostatic chuck. In some embodiments, at least one of the one or more thermally conductive regions extends along and / or adjacent to the sidewall of the electrostatic chuck. In some embodiments, the at least one heating element is a plurality of heating elements, at least two of the plurality of heating elements having at least one of a different cross-sectional area, a different cross-sectional shape, a different location within the insulating body (e.g., a relative location between the first side and the second side), or any combination thereof. In some embodiments, at least one of the cross-sectional area, the cross-sectional shape, the location within the insulating body, or any combination thereof is varied to optimize the temperature distribution across the surface of the electrostatic chuck.

[0082] The electrode is configured to generate an electrostatic field in response to an electrical charge. The electrode extends from the bottom surface of the insulating body to the top surface of the insulating body such that the electrode extends substantially along a plane adjacent to and below the top surface of the insulating body. In some embodiments, the at least one electrically conductive region can include a plurality of electrodes having separate electrically conductive paths extending through the insulating body from the bottom surface of the insulating body and toward the first side of the insulating body such that the plurality of electrodes extend substantially along a plane within the insulating body adjacent to the first side. In some embodiments, the plurality of electrodes (e.g., one or more electrodes) are arranged in a monolithic structure to provide an electrostatic force to secure a substrate to the electrostatic chuck. In some embodiments, for example, the electrostatic chuck can include one or more electrodes arranged adjacent to a plurality of bumps below the top surface of the electrostatic chuck.

[0083] The temperature measurement probe measures a temperature of the monolithic structure. In some embodiments, the temperature measurement probe includes a thermocouple, a resistance temperature detector, or any combination thereof. In some embodiments, the at least one electrically conductive element can include a plurality of temperature measurement probes having separate electrically conductive paths extending through the insulating body from the bottom surface of the insulating body and toward the top surface. In some embodiments, the monolithic structure can further include at least one terminal in communication with the at least one electrically conductive element. In some embodiments, the monolithic structure can further include at least one terminal in communication with the plurality of heating elements, the plurality of electrodes, the plurality of temperature measurement probes, or any combination thereof.

[0084] The electrostatic chuck can not include a joint assembly between the insulating body and the at least one conductive element. In some embodiments, the electrostatic chuck does not include a joint assembly between the insulating body and the heating element. In some embodiments, the electrostatic chuck does not include a joint assembly between the insulating body and the electrode. In some embodiments, the electrostatic chuck does not include a joint assembly between the insulating body and the temperature measurement probe. In some embodiments, the electrostatic chuck does not include a joint assembly between the heating element, the electrode, and the temperature measurement probe.

[0085] Figure 1 is a flowchart of a method for forming an electrostatic chuck according to some embodiments of the present disclosure. As Figure 1 shown, the method 100 for forming an electrostatic chuck having an additively manufactured monolithic structure can include one or more of the following steps: a step 102 of depositing a ceramic material to form an insulating body; a step 104 of depositing a metal material to form at least one conductive element positioned in the insulating body, the conductive element extending from a second side of the insulating body toward a first side. In some embodiments, the depositing of the ceramic material and the depositing of the metal material are performed simultaneously (e.g., co-printed). In some embodiments, the depositing of the ceramic material and the depositing of the metal material are performed sequentially. In some embodiments, the ceramic material and the metal material are co-printed such that the metal material is positioned within or embedded within the ceramic material.

[0086] At step 102, the method 100 can include depositing a ceramic material to form an insulating body. At step 104, the method 100 can include depositing a metal material to form at least one conductive element positioned in the insulating body. The at least one conductive element extends from a second side of the insulating body and toward a first side of the insulating body while being positioned within an interior region of the insulating body such that the at least one conductive element does not protrude from at least one sidewall and a top surface of the insulating body. In some embodiments, the ceramic material and the metal material are co-printed layer-by-layer to form an additively manufactured monolithic structure including the insulating body and the at least one conductive element within the insulating body.

[0087] In some embodiments, the ceramic material and the metallic material are co-printed during a single application process, such that each layer can include the ceramic material, the metallic material, or both. In some embodiments, the at least one electrically conductive element can comprise a heating element, an electrode, a temperature measurement probe, or any combination thereof. In some embodiments, the electrostatic chuck is formed such that the monolithic structure does not include a joint assembly between the insulating body and the at least one electrically conductive element. In some embodiments, the electrostatic chuck can include one or more heating elements configured to operate at 500 °C or above during a semiconductor manufacturing process. In some embodiments, the electrostatic chuck can include one or more heating elements configured to operate at room temperature, or at a temperature in a range of 20 °C to 1200 °C, 100 °C to 1200 °C, 200 °C to 1200 °C, 300 °C to 1200 °C, 400 °C to 1200 °C, 500 °C to 1200 °C, 600 °C to 1200 °C, 700 °C to 1200 °C, 800 °C to 1200 °C, 900 °C to 1200 °C, 1000 °C to 1200 °C, 1100 °C to 1200 °C, 20 °C to 1100 °C, 20 °C to 1000 °C, 20 °C to 900 °C, 20 °C to 800 °C, 20 °C to 700 °C, 20 °C to 600 °C, 20 °C to 500 °C, 20 °C to 400 °C, 20 °C to 300 °C, 20 °C to 200 °C, 20 °C to 100 °C, or 20 °C to 50 °C. Thus, the monolithic structure of the electrostatic chuck is formed from the ceramic material and the metallic material, and does not include a joint assembly therebetween, to enable the electrostatic chuck to operate at temperatures of 500 °C or above during a semiconductor manufacturing process, without causing degradation in the structural integrity of the electrostatic chuck.

[0088] Additive manufacturing can include 3D printing. In some embodiments, the electrostatic chuck can comprise a 3D electrostatic chuck formed by dispensing one or more 3D printable materials from a 3D printer to form the 3D electrostatic chuck. In some embodiments, 3D printing can include creating an object from a 3D model by building up the object in layers that are selectively joined or fused together. In some embodiments, for example, 3D printing can include applying 3D printable materials in layers that are selectively joined or fused together to produce a 3D electrostatic chuck having at least one of a monolithic structure, a unitary construction, a structure that cannot be constructed by machining, or any combination thereof. 3D printing can include fused application using at least one of selective laser melting (SLM), selective laser sintering (SLS), fused deposition modeling (FDM), electron beam melting (EBM), direct metal laser sintering (DMLS), multi-material jetting, or any combination thereof.

[0089] Additive manufacturing can include a multi-material jetting process. In some embodiments, the multi-material jetting process can include selective droplet deposition of one or more materials. In some embodiments, the materials can include precursor materials. In some embodiments, the additive manufacturing can include solidification by cooling the materials deposited during the additive manufacturing. In some embodiments, the multi-material jetting process can include selective droplet deposition of a thermoplastic feedstock filled electrostatic chuck filled with a precursor material. In some embodiments, the multi-material jetting process can include selective application of one or more precursor materials applied by a print head capable of selectively depositing one or more precursor materials during the additive manufacturing process. For example, in some embodiments, the print head can be capable of depositing up to four materials, such as three precursor materials and a support material.

[0090] The droplet volume can be 0.5 nl to 45 nl, or a volume in any range or sub-range between 0.5 nl to 45 nl. For example, in some embodiments, the droplet volume of the precursor material can be 0.5 nl to 45 nl, 1 nl to 45 nl, 5 nl to 45 nl, 10 nl to 45 nl, 15 nl to 45 nl, 20 nl to 45 nl, 25 nl to 45 nl, 30 nl to 45 nl, 35 nl to 45 nl, 0.5 nl to 30 nl, 1 nl to 30 nl, 5 nl to 30 nl, 10 nl to 30 nl, 15 nl to 30 nl, 20 nl to 30 nl, 25 nl to 30 nl, 0.5 nl to 20 nl, 1 nl to 20 nl, 5 nl to 20 nl, 10 nl to 20 nl, or 15 nl to 20 nl.

[0091] The droplet diameter can be 200 pm to 1000 pm, or any range or sub-range between 200 pm to 1000 pm. For example, in some embodiments, the droplet diameter of the precursor material can be 200 pm to 1000 pm, 200 pm to 900 pm, 200 pm to 800 pm, 200 pm to 700 pm, 200 pm to 600 pm, 200 pm to 500 pm, 200 pm to 400 pm, 200 pm to 300 pm, 300 pm to 1000 pm, 300 pm to 900 pm, 300 pm to 800 pm, 300 pm to 700 pm, 300 pm to 600 pm, 300 pm to 500 pm, 300 pm to 400 pm, 400 pm to 1000 pm, 400 pm to 900 pm, 400 pm to 800 pm, 400 pm to 700 pm, 400 pm to 600 pm, 400 pm to 500 pm, 500 pm to 1000 pm, 500 pm to 900 pm, 500 pm to 800 pm, 500 pm to 700 pm, 500 pm to 600 pm, 600 pm to 1000 pm, 600 pm to 900 pm, 600 pm to 800 pm, 600 pm to 700 pm, 700 pm to 1000 pm, 700 pm to 900 pm, 700 pm to 800 pm, 800 pm to 1000 pm, 800 pm to 900 pm, or 900 pm to 1000 pm. In some embodiments, the diameter can be less than 1000 pm.

[0092] The layer height of the precursor material can be 70 pm to 300 pm, or any range or sub-range between 70 pm to 300 pm. In some embodiments, the layer height of each layer of the electrostatic chuck 302 can be based on the layer height of the precursor material. For example, in some embodiments, the layer height of the precursor material can be 70 pm to 300 pm, 100 pm to 300 pm, 150 pm to 300 pm, 200 pm to 300 pm, 250 pm to 300 pm, 70 pm to 250 pm, 100 pm to 250 pm, 150 pm to 250 pm, 200 pm to 250 pm, 70 pm to 200 pm, 100 pm to 200 pm, 150 pm to 200 pm, 70 pm to 150 pm, or 100 pm to 150 pm.

[0093] Electrostatic chucks can be formed from a precursor material. In some embodiments, additive manufacturing can include deposition of a filament feedstock. In some embodiments, the filament feedstock can include a precursor material. In some embodiments, the precursor material can include a raw material, such as a granular raw material. For example, in some embodiments, the precursor material can include at least one of a metal powder, a metal alloy powder, a ceramic powder, a polymer (e.g., a photopolymer resin, a thermoplastic polymer, or any combination thereof), or any combination thereof. In some embodiments, the precursor material can include a material capable of being fused by heat (e.g., a scanning laser or a scanning electron beam) such that the resulting monolithic structure consists essentially of a ceramic material and a metallic material, and does not include a bonding material. In some embodiments, the precursor material can include, consist of, or consist essentially of, or can be selected from the group consisting of: a ceramic material, a metallic material, a polymeric material, or any combination thereof.

[0094] The precursor material can include, consist of, or consist essentially of a ceramic material. In some embodiments, for example, the insulating body can include, consist of, or consist essentially of a ceramic material. In some embodiments, the ceramic material can include, consist of, or consist essentially of, or can be selected from the group consisting of: aluminum oxide, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium dioxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof. In some embodiments, the insulating body can include an electrically conductive ceramic material, an electrically non-conductive ceramic material, or any combination thereof. In some embodiments, the insulating body has a resistivity of no less than about 10 11 Ohm-cm. In some embodiments, for example, the insulating body can include silicon nitride-molybdenum disilicide, and include a resistivity of 1,6 x 10 -2 Ohm-cm. In another example, the insulator can include silicon nitride-molybdenum disilicide, and include a resistivity of 2,4 x 10 -2 Ohm-cm. In some embodiments, the ceramic material can include a solid content of up to 50 volume %.

[0095] The precursor material can comprise, consist of, or consist essentially of a metallic material. In some embodiments, for example, the plurality of insulator regions can comprise, consist of, or consist essentially of a metallic material. In some embodiments, the metallic material can comprise, consist of, or consist essentially of at least one of one or more metals, one or more metal compounds, one or more metal oxides, one or more metal alloys, or any combination thereof. In some embodiments, the metallic material can comprise, consist of, or consist essentially of, or can optionally be selected from the group consisting of: aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, or any combination thereof. In some embodiments, for example, the metallic material can comprise 316L stainless steel and include a solids content of 55% by volume.

[0096] In some embodiments, the precursor material can comprise, consist of, or consist essentially of a polymeric material. In some embodiments, the polymeric material can comprise, consist of, or consist essentially of, or can optionally be selected from the group consisting of: a wax, a polycaprolactone, a thermoplastic, a photopolymer, or any combination thereof. In some embodiments, the precursor material can further comprise one or more solvents.

[0097] The electrostatic chuck can comprise an additively manufactured 3D electrostatic chuck. In some embodiments, the electrostatic chuck can comprise an additively manufactured 3D body. In some embodiments, the electrostatic chuck can have a monolithic structure. In some embodiments, the monolithic structure can be a structure that does not include a joint assembly between an insulating body and at least one electrically conductive element. In some embodiments, the monolithic structure can be a structure that cannot be constructed by glass joining. In some embodiments, the monolithic structure can be a structure that cannot be constructed by forming a body from one or more materials (e.g., a powdered material) using a mold and joining the one or more materials using a fusion application (e.g., glass joining and / or sintering). In some embodiments, the monolithic structure can be a structure that is constructed monolithically. In some embodiments, the electrostatic chuck can have a monolithic construction. In some embodiments, the monolithic structure can be a structure that cannot be constructed by machining an original workpiece to form an insulating body. In some embodiments, the term “monolithic construction” can refer to a structure that does not include two or more structures that are joined together after fabrication. For example, in some embodiments, the electrostatic chuck can not include any structures that are fabricated separately and then joined together. In some embodiments, a monolithically constructed monolithic structure can be at least one of: a structure that does not include a seam, a structure that does not include a brazed joint, a structure that does not include a welded joint, or any combination thereof.

[0098] The electrostatic chuck can have at least one feature. The at least one feature can include, consist of, or consist essentially of, or can be selected from the group consisting of: a conduit, a channel, a duct, a groove, a fitting, a connector, a seal ring, a chamber, a thermal shield, a structure defining a hole, a structure defining an air gap, a structure defining a channel, a structure defining a cavity (e.g., a portion of the closed area defining a cavity), a planar surface, a non-planar surface, a plurality of bumps, at least one electrically conductive element, or any combination thereof. In some embodiments, the at least one electrically conductive element comprises an electrode, a heating element, a temperature measurement probe, or any combination thereof. In some embodiments, the at least one feature can be embedded in a monolithic structure. For example, in some embodiments, the fitting can be a metal fitting embedded in a side of the insulating body and connected to one or more individual electrically conductive paths of the at least one electrically conductive element. In some embodiments, the at least one feature can be defined by the insulating body. For example, in some embodiments, the electrostatic chuck can include at least one conduit that extends circumferentially through an interior of the insulating body adjacent to a perimeter of the insulating body to provide uniform thermal, electrical, and physical properties of the electrostatic chuck.

[0099] Although not shown, in some embodiments, the method further includes one or more of the following steps, which can optionally be performed: forming a structured pattern on the top surface (e.g., the first side) of the insulating body, applying a coating layer on the top surface of the insulating body. In some embodiments, the structured pattern includes a bumped surface. In other embodiments, the structured pattern includes a plurality of bumps. In some embodiments, forming the bumped surface further includes polishing a plurality of bumps on the surface of the electrostatic chuck. In some embodiments, forming the structured pattern further includes planarization of the top surface of the electrostatic chuck. In some embodiments, the coating layer includes at least one of: a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown resistant layer, a mechanically wear resistant layer, or any combination thereof. In some embodiments, applying the coating layer further includes polishing the coating layer on the first side of the insulating body. In some embodiments, the coating layer is polished to provide at least one of: improved flatness, improved surface finish, improved density, improved accuracy of the thickness of the insulating layer between the at least one electrically conductive element and the first side, or any combination thereof. In some embodiments, for example, the coating layer can be a dielectric layer applied to the bumped surface of the electrostatic chuck. In another example, the coating layer can be a diffusion barrier layer applied to the bumped surface of the electrostatic chuck.

[0100] Figure 2 is a perspective view of a non-limiting embodiment of a device 200 according to some embodiments. As Figure 2As shown, the device 200 includes a monolithic structure 202 that includes an insulating body 204 and at least one electrically conductive element 206 positioned in the insulating body 204. The monolithic structure 202 is a monolithically constructed additively manufactured monolithic structure 202. In some embodiments, the monolithic structure 202 does not include a joining assembly. In other embodiments, the monolithic structure 202 does not include a joining assembly between the insulating body 204 and the at least one electrically conductive element 206.

[0101] The insulating body 204 includes a first side 210 and a second side 212 opposite the first side 210. In some embodiments, the first side 210 can be referred to as a top face and the second side 212 can be referred to as a bottom face. In some embodiments, the at least one electrically conductive element 206 can include an electrode, a heating element, a temperature measurement probe, or any combination thereof. In some embodiments, the at least one electrically conductive element 206 can include a plurality of electrically conductive elements extending from the second side 212 to the first side 210 of the insulating body 204 such that each electrically conductive element includes a separate electrically conductive path extending through the insulating body 204 to achieve desired performance characteristics of the device 200. In some embodiments, the at least one electrically conductive element 206 can further include dummy structures to provide more uniform thermal, electrical, or physical performance characteristics of the device 200.

[0102] The monolithic structure 202 can include at least one terminal 208. The at least one terminal 208 enables at least one of an electrical current (e.g., AC, DC, non-AC, non-DC, or any combination thereof), an electrical potential (e.g., AC, DC, non-AC, non-DC, or any combination thereof), a ground connection, or any combination thereof to be applied to the at least one electrically conductive element 206.

[0103] In some embodiments, the monolithic structure 202 can include at least one first terminal 208a in communication with a heating element 214. In other embodiments, the at least one first terminal 208a can be in communication with a plurality of heating elements 214. In some embodiments, the monolithic structure 202 can include at least one second terminal 208b in communication with an electrode 216. In other embodiments, the at least one second terminal 208b can be in communication with a plurality of electrodes 216. In other embodiments, the monolithic structure 202 can include at least one third terminal 208c in communication with a temperature measurement probe 220. In other embodiments, the at least one third terminal 208c can be in communication with a plurality of temperature measurement probes 220. In some embodiments, for example, a first terminal can be in communication with one or more heating elements, and a second terminal can be in communication with one or more electrodes in the insulating body, and an electrical current can be applied to the first terminal 208a to heat an electrostatic chuck, and an electrical current can be applied to the second terminal 208b to provide an electrostatic force to secure a wafer to a side of the electrostatic chuck.

[0104] In some embodiments, the at least one electrically conductive element 206 can include a heating element 214. The heating element 214 extends from the second side 212 and throughout an interior portion of the insulating body 204 based on desired thermal characteristics of the device 200. The heating element 214 is configured to generate thermal energy, such as heat, in the monolithic structure 202 in response to an electrical current directed through the heating element 214. In some embodiments, the heating element 214 includes a plurality of heating elements 214, each heating element 214 having a separate electrically conductive path extending through the insulating body 204 from the second side 212 of the insulating body to a different interior region of the insulating body 204 to provide localized thermal energy to the insulating body. In some embodiments, the plurality of heating elements 214 are positioned beneath the electrodes 216 in the insulating body 204. In some embodiments, the plurality of heating elements 214 are arranged in a horizontal direction and / or a vertical direction within the insulating body 204 to achieve a desired thermal uniformity at the first side 210 of the insulating body 204. In some embodiments, the heating element 214 is positioned beneath a planar layer of the electrodes 216 positioned in the insulating body 204. In other words, in some embodiments, the heating element 214 extends through the insulating body 204 between the second side 212 and the planar layer of the electrodes 216 within the insulating body 204. Accordingly, a region of the insulating body 204 including the heating element 214 can be referred to as a thermally conductive region of the insulating body 204.

[0105] In some embodiments, the insulating body 204 includes a sidewall 218. In some embodiments, at least one of the plurality of heating elements 214 is further positioned adjacent to the sidewall 218 within the insulating body 204. In some embodiments, at least one of the plurality of heating elements 214 can extend circumferentially within the insulating body 204 adjacent to the sidewall 218. In some embodiments, the heating element 214 can be configured to generate at least 500 °C. Additionally, the insulating body 204 is formed around the heating element 214 to enable the insulating body 204 to distribute the heat generated by the heating element 214 throughout the insulating body 204 and at the first side 210. Accordingly, the insulating body 204 and the at least one electrically conductive element 206 are capable of operating at a temperature of at least 500 °C. In some embodiments, the insulating body 204 and the at least one electrically conductive element 206 can be configured to operate at a temperature of up to 500 °C. In some embodiments, the insulating body 204 and the at least one electrically conductive element 206 can be configured to operate at a temperature of more than 500 °C. In some embodiments, the insulating body 204 and the at least one electrically conductive element 206 can be configured to operate at a temperature of up to and including 550 °C. In some embodiments, the insulating body 204 and the at least one electrically conductive element 206 can be configured to operate at a temperature of up to and including 1200 °C.

[0106] In some embodiments, the at least one electrically conductive element 206 can include an electrode 216. The electrode 216 is configured to generate an electrostatic field in response to an electrical charge. The electrode 216 extends from the second side of the insulating body toward the first side of the insulating body such that the at least one electrode extends substantially along a plane within the insulating body adjacent to the first side. Thus, the planar region of the insulating body 204 that includes the electrode 216 can be referred to as an electrically conductive region of the insulating body 204. In some embodiments, the electrode 216 includes a plurality of electrodes 216. In some embodiments, the plurality of electrodes 216 includes separate electrically conductive paths that extend through the insulating body 204 from the second side 212 of the insulating body 204 and toward the first side 210 of the insulating body 204 such that the plurality of electrodes 216 extends substantially along a plane within the insulating body 204 adjacent to the first side 210.

[0107] In some embodiments, the at least one electrically conductive element 206 includes a temperature measurement probe 220. In some embodiments, the temperature measurement probe 220 includes at least one of a thermocouple, a resistance temperature detector, other temperature sensing device, or any combination thereof. In some embodiments, the at least one electrically conductive element 206 includes a plurality of temperature measurement probes 220. In some embodiments, each of the plurality of temperature measurement probes 220 includes a separate electrically conductive path that extends through the insulating body 204 from the second side 212 of the insulating body toward the first side 210.

[0108] The monolithic structure 202 is capable of operating at high temperatures. In some embodiments, the monolithic structure 202 is capable of withstanding temperatures in excess of 500 °C. For example, in some embodiments, the environment of the monolithic structure 202 can be maintained at such high temperatures during the fabrication of a semiconductor wafer.

[0109] The monolithic structure 202 does not include a bonding assembly. In some embodiments, the monolithic structure 202 does not include a bonding assembly between the insulating body 204 and the at least one electrically conductive element 206. In some embodiments, a bonding assembly includes a process or material used to join together at least one of the first structure and the second structure after the at least one of the first structure or the second structure is fabricated. For example, the monolithic structure 202 can not include an insulating layer and an electrode layer joined together after the at least one of the insulating layer and the electrode layer is formed.

[0110] In this regard, in some embodiments, the monolithic structure 202 can be formed by an additive manufacturing process such that the resulting monolithic structure 202 does not have a joining component after the monolithic structure 202 has been sufficiently hardened. The monolithic structure 202 does not have a joining component positioned therein because the joining component can degrade or weaken over time in response to high temperatures and severely impact the integrity of the monolithic structure 202. In some embodiments, the joining component can include, consist of, or consist essentially of, or can be selected from the group consisting of: an adhesive, a solder, a filler metal, a polymer (e.g., a thermoplastic), a glass bonding material, or any combination thereof. In some embodiments, for example, the adhesive comprises an epoxy.

[0111] In some embodiments, the monolithic structure 202 can further include at least one conduit 222. In some embodiments, the at least one conduit 222 is defined by at least one of the insulating body 204, the at least one electrically conductive element 206, or any combination thereof. In some embodiments, the at least one conduit 222 extends through the insulating body 204 adjacent to a perimeter of the insulating body 204. In some embodiments, the at least one conduit 222 includes one or more lift pin holes defined by the insulating body 204. The lift pin holes enable an elongated component to pass through the lift pin holes for removal of a substrate positioned on the first side 210 of the insulating body 204. In some embodiments, the at least one conduit 222 includes a backside gas delivery hole defined by the insulating body 204. The backside gas delivery hole enables a gas, such as a heat transfer gas, to pass through the insulating body 204 to an underside of a substrate positioned on the first side 210 of the device 200. In some embodiments, the at least one conduit 222 includes a dummy structure configured to provide uniform thermal, electrical, and physical properties of an electrostatic chuck defined by the insulating body 204. In some embodiments, the at least one conduit 222 includes at least one of a mounting fitting, a bolt hole, a flange, a connector, an alignment feature, an optical path, or any combination thereof.

[0112] In some embodiments, the monolithic structure 202 can further include one or more gas channels 224 defined by the insulating body 204. In some embodiments, the one or more gas channels 224 enable a gas to be directed through a channel between a substrate at the first side 210 and an outer surface of the insulating body 204. In some embodiments, the at least one conduit 222 can include the one or more gas channels 224 positioned on the first side 210 of the insulating body 204. In some embodiments, the structured pattern on the first side 210 of the insulating body 204 can include the one or more gas channels 224. In some embodiments, the insulating body 204 can include at least one gas channel 224 at the first side 210.

[0113] Figure 3is a cross-sectional side view of a non-limiting embodiment of an apparatus 300 according to some embodiments. As shown Figure 3 As shown, the apparatus 300 includes an electrostatic chuck 302 that includes a monolithic structure 304 that includes an insulating body 306 and at least one electrically conductive element 308 positioned in the insulating body 306. In some embodiments, the insulating body 306 includes a ceramic component. In some embodiments, the ceramic component includes a ceramic material formed by additive manufacturing. In some embodiments, the at least one electrically conductive element 308 includes a metal component. In some embodiments, the metal component includes a metal material formed by additive manufacturing. In some embodiments, the ceramic material and the metal material are selectively applied to each layer of a multi-layer additive manufacturing process to form the monolithic structure. In other embodiments, the ceramic material and the metal material are co-printed layer-by-layer by an additive manufacturing process to form the monolithic structure 304 having the insulating body 306 and the at least one electrically conductive element 308. As a result of being co-printed via the additive manufacturing process, the monolithic structure does not include a joint component between the insulating body 306 and the at least one electrically conductive element 308.

[0114] The at least one electrically conductive element 308 can form a thermally conductive region including at least one heating element 322, an electrically conductive region including at least one electrode 324, or any combination thereof. In some embodiments, the thermally conductive region can be arranged in the insulating body 306 to maximize thermal uniformity of a top surface of the electrostatic chuck 302 and delivered to a wafer. In some embodiments, the thermally conductive region can be arranged in the insulating body 306 during additive manufacturing based on predefined thermal characteristics at the electrostatic chuck 302 and the wafer. In some embodiments, the thermally conductive region can include at least one heating element 322 embedded in the insulating body 306. In some embodiments, a trace function of the heating element embedded in the insulating body 306 can be arranged during additive manufacturing to optimize thermal uniformity of the electrostatic chuck 302. In some embodiments, the thermally conductive region can include a sidewall heater 320. In some embodiments, the sidewall heater 320 can provide improved thermal uniformity at an edge of the electrostatic chuck 302.

[0115] The monolithic structure 304 can include a top surface and a bottom side opposite the top surface. The electrostatic chuck 302 can include at least one terminal 310. In some embodiments, the monolithic structure 304 can include at least one terminal 310 formed of a metallic material during an additive manufacturing process, the at least one terminal 310 connected with a corresponding one of the at least one electrically conductive element 308. The at least one terminal 310 can be positioned in the insulating body 306 such that the at least one terminal 310 is accessible from a bottom surface of the insulating body 306. In some embodiments, the at least one terminal 310 can be positioned below a surface of the bottom surface of the electrostatic chuck 302, and an electrical plug connector can be placed in electrical communication with the at least one terminal 310 to deliver electrical current to the corresponding at least one electrically conductive element 308. In this regard, in some embodiments, the at least one terminal 310 can include an electrode pin 312 that extends from the at least one terminal 310 through the bottom surface of the insulating body 306. In some embodiments, the at least one terminal 310 can be in communication with a thermally conductive region and the at least one heating element 322. In some embodiments, the at least one terminal 310 can be in communication with an electrically conductive region and the at least one electrode 324. In some embodiments, the at least one terminal 310 includes a first terminal in communication with a thermally conductive region and a second terminal in communication with an electrically conductive region.

[0116] The electrostatic chuck 302 can not include a bonding assembly between the insulating body 306 and the at least one electrically conductive element 308. In some embodiments, the bonding assembly can include, consist of, or consist essentially of, or can be selected from the group consisting of: an adhesive, a filler metal, a bonding material, a glass bond, a sintered material, or any combination thereof. The electrostatic chuck 302 can be capable of operating at temperatures of 500 °C or above while maintaining thermal uniformity of the electrostatic chuck 302 and wafer level. The electrostatic chuck 302 can also be capable of providing sufficient heater power at the edge of the electrostatic chuck 302. Thus, the electrostatic chuck 302 overcomes temperature non-uniformity around features, such as raised pin holes and backside gas holes, due to limitations of heater placement and issues with metal contaminant diffusion from the heater material to the wafer contact surface.

[0117] The electrostatic chuck 302 can include a coefficient of thermal expansion (CTE) between the insulating body 306 and the at least one electrically conductive element 308 within or between any range or sub-range of 5 to 70%. For example, in some embodiments, the CTE between the insulating body 306 and the at least one electrically conductive element can be within 5 to 60%, 5 to 50%, 5 to 40%, 5 to 30%, 5 to 20%, 5 to 10%, 10 to 70%, 10 to 60%, 10 to 50%, 10 to 40%, 10 to 30%, 10 to 20%, 20 to 70%, 20 to 60%, 20 to 50%, 20 to 40%, 20 to 30%, 30 to 70%, 30 to 60%, 30 to 50%, 30 to 40%, 40 to 70%, 40 to 60%, or 40 to 50%. In some embodiments, the electrostatic chuck 302 can include a coefficient of thermal expansion (CTE) between the insulating body 306 and the at least one electrically conductive element 308 within 50%. The ceramic material of the insulating body 306 and the metallic material of the electrically conductive element 308 can be selected based on the CTE of the materials due to thermal stress failures that can be attributed to CTE mismatch. In some embodiments, the materials selected for forming the electrostatic chuck 302 can be based on CTE mismatch at high temperatures. In some embodiments, the materials selected for forming the electrostatic chuck 302 can be based on electrical properties at high temperatures. In some embodiments, high temperatures can include temperatures of 500°C or above.

[0118] The electrostatic chuck 302 can include a structured pattern on a top surface of the insulating body 306. The structured pattern can include a raised surface. In some embodiments, the structured pattern can include a plurality of elevations 314 formed on the top surface. The plurality of elevations 314 can include a plurality of protrusions distributed across the top surface configured to contact a surface of a wafer. The plurality of elevations 314 reduces the surface area of the wafer that is contacted while allowing the wafer to be secured to the plurality of elevations 314 in response to electrostatic forces. In some embodiments, the top surface of the monolithic structure 304 can include a substantially planar surface that includes a plurality of channels defined by a plurality of elevations 314 formed on the top surface that are configured to contact a surface of a substrate (e.g., a wafer). Additionally, in some embodiments, the plurality of channels can allow gas, liquid, or both to be directed through the plurality of channels and between the plurality of elevations 314 when a wafer is positioned on the top surface. For example, a hot gas can be delivered through the plurality of channels to improve heat transfer between the electrostatic chuck 302 and the wafer.

[0119] In some embodiments, a planarization process can be applied to the top surface, such as to form a plurality of bumps 314, to provide a substantially planar surface for contacting a wafer surface. Planarization includes removing surface topography by evening and smoothing the surface. In some embodiments, the plurality of bumps 314 can be formed by planarization of the insulating body 306. In some embodiments, the plurality of bumps 314 can be formed by polishing the top surface to provide a substantially planar surface formed by the bumps. In some embodiments, planarization removes a first layer from the plurality of bumps 314, and polishing removes a second layer from the plurality of bumps 314 to further even and smooth the planar surface formed by the bumps to enable the electrostatic chuck 302 to contact a wafer without damaging the wafer.

[0120] In some embodiments, the apparatus 300 includes a coating applied to at least the top surface of the monolithic structure 304 and the electrostatic chuck 302. In this regard, the coating can be applied to the top surface of the insulating body 306. In some embodiments, the plurality of bumps 314 are formed by the coating applied to the top surface of the insulating body 306. In other embodiments, the coating is polished to provide at least one of improved planarity, improved surface finish, improved density, improved precision of the thickness of the insulating layer between the at least one conductive element and the first side, or any combination thereof. In some embodiments, the coating includes at least one of a dielectric layer, a metal diffusion barrier layer, a dielectric breakdown resistant layer, a mechanically abrasion resistant layer, or any combination thereof.

[0121] The electrostatic chuck 302 can further include a dielectric layer 316. When the conductive regions are electrically biased with respect to the substrate by a voltage, free electrostatic charges drift through the dielectric layer 316 in response to the electric field generated at the conductive regions, and the attractive force of the dielectric layer 316 combines with the electrostatic force of the insulating body 306 to provide a greater electrostatic force to secure the substrate. In some embodiments, the dielectric layer 316 can include one or more materials applied to the electrostatic chuck 302. In some embodiments, the dielectric layer 316 can be positioned on a surface of the electrostatic chuck 302 and the insulating body 306. In some embodiments, the dielectric layer 316 can be positioned on the first side of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 can be positioned adjacent to the conductive regions on the first side of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 can be positioned over the electrodes of the electrostatic chuck 302. In some embodiments, the dielectric layer 316 can be bonded to the monolithic structure 304 at the first side after fabrication. In some embodiments, the dielectric layer 316 can be positioned on the top surface at the plurality of bumps 314.

[0122] The electrostatic chuck 302 can further include a diffusion barrier layer 318 positioned on a surface of the insulating body 306. The diffusion barrier layer 318 can prevent metal contaminants from reaching a substrate secured to the electrostatic chuck 302. For example, the diffusion barrier layer 318 can prevent metal contaminants from the dielectric layer 316 from reaching the substrate. In some embodiments, the diffusion barrier layer 318 can be positioned on the first side of the insulating body 306. In some embodiments, the diffusion barrier layer 318 can be positioned between the insulating body 306 and the dielectric layer 316. In some embodiments, the dielectric layer 316 can be positioned between the diffusion barrier layer 318 and the insulating body 306. Thus, in some embodiments, the diffusion barrier layer 318 can be applied to the dielectric layer 316. In some embodiments, for example, the diffusion barrier layer 318 can include amorphous aluminum oxide deposited by atomic layer deposition.

[0123] It will be appreciated by one of ordinary skill in the art that the configuration of the insulating body 306, the conductive element 308, the at least one terminal 310, the plurality of protuberances 314, the dielectric layer 316, and / or other components of the electrostatic chuck 302 are not intended to be limiting, and that the electrostatic chuck 302 can include other components and / or other configurations or arrangements without departing from the scope of the present disclosure.

[0124] Figures 4 to 7 is a schematic diagram of a non-limiting embodiment of an electrostatic chuck according to some embodiments.

[0125] Figure 4 is an exploded view of an electrostatic chuck 400 having a plurality of layers (e.g., layers 404, 408, 412, 414, and 416). All or some of the layers can be formed using an additive manufacturing process. In some cases, the layers can be formed during a single additive manufacturing process (i.e., a single print). Layers formed by an additive manufacturing process have a monolithic structure having a unitary construction that is free of joined components.

[0126] In some embodiments, as shown, the top layer 404 includes an insulating material. In some embodiments, the second layer 408 includes a conductive material, such that it is a conductive layer. In some embodiments, the conductive layer 408 is configured as at least one electrode and is incorporated (e.g., embedded) into or on a surface of a layer 412 that includes an insulating material. In some embodiments, the insulating material used to form the layer 412 is the same as the insulating material used to form the top layer 404. In some embodiments, the insulating material used to form the layer 412 is different than the insulating material used to form the layer 404.

[0127] In some embodiments, layer 414 is a conductive layer comprising a conductive material. In some embodiments, conductive layer 414 is incorporated inside insulating layer 412. In some embodiments, conductive layer 414 is embedded towards the bottom of the yellow layer. In some embodiments, conductive layer 414 is configured as at least one heater. In some embodiments, layer 414 comprises one or more collar-like elements 422. In some embodiments, collar-like elements 422 are electrical contacts of the heater that extend through and / or into bottom layer 416 and facilitate connection of the heater's power cable from the backside 424 of electrostatic chuck 400.

[0128] In some embodiments, bottom layer 416 comprises an insulating material, which can be the same as and / or different from the insulating material of other layers discussed above (e.g., layers 404 and / or 412). In some embodiments, bottom layer 416 is configured to allow electrical connections to be incorporated into the part. In some embodiments, bottom layer 416 is constructed via an additive manufacturing process (e.g., 3D printing) to have open spaces or conduits, such as, for example, blind holes, with conductive material on the inside wall surface. Such conduits within a monolithic structure cannot be achieved using conventional manufacturing methods and can only be achieved via an additive manufacturing process. In some embodiments, the conductive material of the inside surface of the conduits is made thicker than needed so that the features can be subsequently machined to make threads for connections.

[0129] In some embodiments, the additive manufactured part is built up from the bottom (i.e., starting from bottom layer 416). In some embodiments, this involves starting from co-depositing or co-printing conductive and insulating materials so that collar-like conductive features are created in a substantially insulating material, as shown by example in layer 414. In some embodiments, as Figure 4As shown, a plurality of circular vertical void holes 426 are formed in the conductive layer 414, which holes eventually go all the way through the chuck and serve as lift pin holes. In some embodiments, these holes 426 have no conductive material on the inner sidewalls (in any layer). In some embodiments, once these features are printed in the bottom layer 416, additive manufacturing incorporates a layer of conductive and insulating material to create the heater. In some embodiments, in addition to the perforations 426 having no material, there is a layer (insulation layer 412) of substantially insulating material for the lift pin holes and conductive posts (not shown) configured to be connected to the electrode layer that is subsequently printed. In some embodiments, the conductive layer 408 is the electrode layer and substantially contains conductive material with some insulating material disposed between it. As can be seen, the conductive layer 408 also includes lift pin holes 426, which are empty spaces or voids in the layer 408. In some embodiments, as shown, there can be a precisely defined thin insulating layer (layer 404) that is solidly filled with material except for the lift pin holes 426. In some embodiments, the thickness of the insulating layer 408 and the mass of insulating material in the layer 408 is optimized because, in some embodiments, the layer 408 serves as a dielectric layer. In some embodiments, the additive manufacturing process prints the bump and seal ring, as well as the gas channel features, on the top surface of the layer 408.

[0130] Figure 5 A heater layer 502 is depicted in accordance with some embodiments. In some embodiments, the heater layer 502 includes insulating material 506 and conductive material 508 embedded within the same layer, or such that the insulating material 506 and conductive material 508 are in the same horizontal plane.

[0131] Figure 6 An electrode layer 602 is depicted in accordance with some embodiments including insulating material 606 and conductive material 608. The electrode layer 602 can be formed via an additive manufacturing process such as co-printing or co-deposition, such that the electrode layer 602 is formed as a monolithic structure having a single construction, such that the insulating material 606 and conductive material are in the same horizontal plane, and the monolithic structure contains no joining components.

[0132] Figure 7 A side view of an electrostatic chuck 700 is depicted in accordance with some embodiments showing an electrode layer 708 connected to a bottom layer 716 having conductive posts 720. In some embodiments, two heater lines 722 are formed in the electrode layer 708. In some embodiments, a gas line connection 724 for backside gas is positioned in a central location of the chuck 700. In some embodiments, the gas line connection 722 is an internal channel routed through an insulating layer (not shown here) that is configured to connect to a hole 726 on the top surface of the chuck 700. In some embodiments, the electrodes (not shown) are positioned close to the top surface. In some embodiments, the electrodes are separated by a thin insulating layer.

[0133] Thus, having described several illustrative embodiments of the disclosure, those of ordinary skill in the art will readily apprehend that yet other embodiments can be made and utilized in the scope of the claims that follow. Numerous advantages of the disclosure covered by this document have been set forth in the foregoing description. It will be understood, however, that the disclosure is, in many respects, only illustrative. Changes can be made in details, particularly in matters of shape, size, and arrangement of the parts, without exceeding the scope of the disclosure. The language of the claims is to be interpreted in the broadest reasonable manner, even though that language can be broader than is intended in the specific examples described above.

Claims

1. An electrostatic chuck, comprising: Additively manufactured monolithic structures, including: Insulating body; and At least one conductive element is positioned within the insulating body. The integral structure does not include the bonding assembly between the insulating body and the at least one conductive element, and the electrostatic chuck is capable of withstanding temperatures of 500°C or higher.

2. The electrostatic chuck of claim 1, wherein the at least one conductive element is a heater element, and wherein the electrostatic chuck is capable of maintaining thermal uniformity across the wafer surface.

3. The electrostatic chuck of claim 1, wherein the additively manufactured monolithic structure further comprises at least one conduit, wherein the at least one conduit is defined by the insulating body and contains no material.

4. The electrostatic chuck according to claim 3, wherein the at least one conduit is at least one of a gas channel, a liquid channel, a connecting hole, a screw hole, a perforation, a gap, or any combination thereof.

5. The electrostatic chuck according to claim 3, wherein the at least one conduit is a heat shielding structure within the insulating body, wherein the heat shielding structure extends together with and is adjacent to the outer periphery of the insulating body.

6. The electrostatic chuck according to claim 1, wherein the insulating body comprises a ceramic material and the at least one conductive element comprises a metallic material.

7. The electrostatic chuck according to claim 6, wherein the ceramic material and the metal material are co-printed layer by layer to form the additively manufactured monolithic structure, wherein the co-printing of the ceramic material and the metal material is such that the ceramic material and the metal material are located in the same horizontal plane.

8. The electrostatic chuck according to claim 1, wherein the insulating body comprises at least one of the following: Aluminum oxide, zirconium oxide, aluminum nitride, aluminum oxynitride, silicon nitride, silicon oxide, silicon carbide, silicon oxynitride, silicon carbonitride, tungsten carbide, titanium oxide, hafnium silicate, zirconium silicate, zirconium silicate, hafnium dioxide, strontium dioxide, scandium dioxide, zirconium oxide, chromium oxide, yttrium oxide, iron oxide, barium oxide, barium titanate, tantalum oxide, or any combination thereof, and The at least one conductive element comprises at least one of the following: aluminum, tungsten, nickel, stainless steel, silver, gold, tantalum, platinum, palladium, cobalt, titanium, copper, molybdenum, silicon, molybdenum disilicide, or any combination thereof.

9. The electrostatic chuck according to claim 1, wherein the insulating body has a minimum of about 10 11 Resistivity in Ohm-cm.

10. The electrostatic chuck according to claim 1, wherein the at least one conductive element comprises: At least one electrode, wherein the at least one electrode is configured to generate an electrostatic field in response to an electric charge.

11. The electrostatic chuck of claim 10, wherein the at least one electrode is positioned below the top surface of the insulating body.

12. The electrostatic chuck of claim 1, wherein the at least one conductive element further comprises at least one heating element, wherein the at least one heating element is configured to provide thermal energy to the entire structure.

13. The electrostatic chuck of claim 12, wherein the at least one heating element is positioned below the at least one electrode in the insulating body.

14. The electrostatic chuck of claim 12, wherein the at least one heating element is positioned within the insulating body adjacent to a sidewall.

15. A method comprising: Depositing ceramic materials to form an insulating matrix; and Deposit metallic material to form at least one conductive element positioned within the insulating body. The ceramic material and the at least one conductive element define a monolithic structure having a single-piece construction without joints and capable of withstanding temperatures of 500°C or higher.

16. The method of claim 15, further comprising forming at least one conduit free of any material within the monolithic structure.

17. The method of claim 15, wherein an additive manufacturing process is used to deposit the ceramic material and the metallic material.

18. The method of claim 17, wherein the ceramic material and the metal material are co-printed layer by layer such that the ceramic material and the metal material are located in the same horizontal plane.

19. The method of claim 15, further comprising: The coating is applied to the top surface of the insulating body.

20. The method of claim 15, wherein the monolithic structure forms at least a portion of an electrostatic chuck.

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