Production process of ingot casting crucible for semiconductor silicon device

Abstract

The invention discloses a production technology for a semiconductor silicon device ingot casting crucible. The production technology for the semiconductor silicon device ingot casting crucible comprises the steps that raw materials are prepared, wherein the raw materials of a quartz coating, the raw materials of a fused quartz ceramic sleeve, the raw materials of a silicon nitride coating and the raw materials of a fused quartz ceramic crucible are prepared; the raw material of the quartz coating is natural high-purity quartz sand containing 99.99% of silicon dioxide, and the raw material of the fused quartz ceramic sleeve and the raw material of the fused quartz ceramic crucible are both mixtures of D50 quartz fine slurry with the size of 8-12 micrometers and quartz coarse sand with the size of 20-200 meshes. According to the production process of the ingot casting crucible for the semiconductor silicon device, the fused quartz ceramic sleeve can be provided with a porous structure, and stress can be released when silicon liquid adheres; the overall stability of the composite structure is enhanced through injection coagulation, slip casting and drying treatment, crucible breakage or silicon ingot defects caused by stress concentration are avoided, and ingot casting stability is guaranteed.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic polycrystalline silicon ingot technology, specifically, it relates to a process for producing ingot crucibles for semiconductor silicon devices. Background Technology

[0002] In the production process of semiconductor-grade polycrystalline silicon ingots, the crucible, as the core component supporting the molten silicon, needs to be isolated from the molten silicon in a high-temperature environment above 1400℃, while ensuring the purity of the silicon ingot and the stability of production. However, existing technologies have significant drawbacks: Existing crucibles generally use silicon nitride coatings as isolation layers, but the bonding method between the coating and the crucible substrate is simple and the bonding force is weak. Moreover, some silicon nitride coatings are prone to separation from the substrate at high temperatures due to insufficient purity (below 99.999%) and low α-phase content (below 95%), or peeling off due to continuous erosion by molten silicon.

[0003] Existing silicon nitride coatings can peel off at a rate of 10%-20% after high-temperature ingot casting, resulting in silicon nitride inclusions in the silicon ingot exceeding 0.1 ppm, far exceeding the 0.05 ppm upper limit for semiconductor-grade silicon ingots. The peeled silicon nitride particles directly enter the silicon ingot, forming silicon nitride inclusions; some silicon nitride also reacts with the silicon melt and crucible materials, generating impurities such as silicon carbide, leading to excessive inclusion content in the silicon ingot and failing to meet the requirements for high-purity silicon raw materials (purity must reach 99.9999% or higher) for semiconductor devices.

[0004] Meanwhile, most existing crucibles have a single structural design and lack a gradient buffer mechanism. When the molten silicon adheres to the inner wall of the crucible, the thermal stress cannot be dispersed through the structure, which can easily lead to crucible breakage due to stress concentration, causing the ingot casting process to be interrupted; or it can cause defects such as cracks and deformation in the silicon ingot, significantly reducing the yield. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this invention is to provide a process for manufacturing ingot crucibles for semiconductor silicon devices.

[0006] To achieve the aforementioned objectives, the technical solution adopted by this invention includes the following steps: S1. Raw material preparation: Prepare quartz coating raw materials, fused silica ceramic sleeve raw materials, silicon nitride coating raw materials, and fused silica ceramic crucible raw materials respectively; the quartz coating raw material is natural high-purity quartz sand containing 99.99% silicon dioxide, the fused silica ceramic sleeve raw material and the fused silica ceramic crucible raw material are both mixtures of fine quartz slurry with D50 of 8-12 microns and coarse quartz sand of 20-200 mesh, and the silicon nitride coating raw material is silicon nitride particles with purity >99.999%, α-phase content >95%, and D50 of 2-3 microns; S2. Molding of fused silica ceramic crucibles: After adding an organic crosslinking agent to the raw material of fused silica ceramic crucibles, the fused silica ceramic crucible matrix is ​​made by injection molding technology, with a purity of 99.8%. S3. Formation of silicon nitride coating: After mixing silicon nitride coating raw materials with silica sol and water, the mixture is brushed onto the inner surface of the fused silica ceramic crucible substrate to form a silicon nitride coating. S4. Molding of fused silica ceramic sleeve: The fused silica ceramic sleeve raw material is slurry cast into a fused silica ceramic sleeve with a purity of 99.8%, and then placed on the inner surface of the silicon nitride coating. S5. Quartz Coating Formation: The quartz coating raw material is made into a slurry with an average particle size of 1-200 micrometers and coated on the inner surface of the molten quartz ceramic sleeve to form a quartz coating. S6. Composite treatment: The above multi-layer structure is dried.

[0007] In this invention, a multi-layer composite structure design is used to prevent the silicon ingot from directly contacting the silicon nitride coating; high-purity raw materials reduce the introduction of impurities; each layer is formed through specific processes, such as injection molding to enhance crucible strength and brushing to ensure uniform silicon nitride coating. The overall structure formed by these processes can release stress when the molten silicon adheres to the crucible, thereby reducing the formation of silicon carbide or silicon nitride inclusions in the silicon ingot and improving the stability of the ingot casting process.

[0008] Preferably, in step S5, the preparation of the quartz coating slurry includes: grinding quartz particles into two specifications, coarse and fine, and mixing them with water and silica gel respectively; the coating process involves alternating between coarse and fine slurries 3-7 times, and the coating thickness is 1-3 mm.

[0009] In this invention, alternating coating of coarse and fine particles can enhance the density and uniformity of the quartz coating, and controlling the thickness ensures that the coating can effectively isolate the molten silicon from the inner structure; multiple coatings improve the bonding strength between the coating and the molten quartz ceramic sleeve, reduce the risk of coating peeling, and further reduce inclusions.

[0010] Preferably, in step S4, the fused silica ceramic sleeve has a porous structure, which is formed by adding organic matter to the fused silica ceramic sleeve raw material, coating it, and then heating it to decompose the organic matter and leave pores.

[0011] In this invention, the porous structure can buffer and release stress when the molten silicon adheres to the crucible, avoiding crucible breakage or silicon ingot defects caused by stress concentration, thereby improving the safety of the ingot casting process and the integrity of the silicon ingot.

[0012] Preferably, the organic material is a combination of monomer and crosslinking agent or PVA.

[0013] In this invention, the aforementioned organic matter can be completely decomposed during the heating process without any residual impurities, ensuring the purity of the porous structure; at the same time, its decomposition characteristics are stable and can form uniform pores, ensuring that the porous structure of the fused silica ceramic sleeve can effectively play its stress release role without introducing additional impurities.

[0014] Preferably, in step S2, in the casting and molding technology of the fused silica ceramic crucible, the amount of organic crosslinking agent added is 1-5% of the total mass of the raw materials.

[0015] In this invention, the organic crosslinking agent can improve the bonding strength between the quartz slurry and the coarse sand, and enhance the density and structural stability of the fused quartz ceramic crucible through injection molding technology; the 99.8% purity, combined with the stable structure, reduces the leakage of impurities from the crucible itself, while improving its high-temperature resistance and preventing deformation or cracking at high temperatures.

[0016] Preferably, in step S3, the thickness of the silicon nitride coating is 0.1-0.5 mm, and it is allowed to air dry naturally for 1-2 hours after brushing.

[0017] In this invention, controlling the thickness ensures that the silicon nitride coating can both provide isolation and avoid insufficient adhesion due to excessive thickness; the drying step allows the coating to fully bond with the fused silica ceramic crucible substrate, reducing the probability of the silicon nitride coating peeling off at high temperatures, thereby reducing its entry into the silicon ingot to form inclusions.

[0018] Preferably, the drying process in step S6 is carried out in a curing kiln at a temperature of 60-120°C for 8-24 hours.

[0019] In this invention, the drying parameters ensure that the moisture in each layer evaporates slowly and fully, avoiding coating cracking or delamination caused by rapid drying; the dried structure is more tightly bonded, improving the overall thermal shock resistance of the crucible and reducing the risk of structural failure during the casting process.

[0020] Preferably, the mixing ratio of the coarse and fine slurries is fine slurry: coarse sand = 1:(0.8-1.2).

[0021] In this invention, this ratio can optimize the particle packing density of the quartz coating, with fine slurry filling the gaps between coarse sand to form a dense structure, thereby improving the density of the coating and its resistance to slag erosion. At the same time, it enhances the bonding strength between the coating and the fused silica ceramic sleeve, reduces coating peeling, and further reduces the risk of inclusion introduction.

[0022] Compared with the prior art, the advantages of the present invention include: (1) The present invention provides a process for manufacturing ingot crucibles for semiconductor silicon devices. Through a composite structure consisting of a quartz coating and a fused quartz ceramic sleeve, the silicon ingot is isolated from the silicon nitride coating. The high-purity silicon nitride coating has a purity of >99.999% and an α phase of >95%. Combined with the brush coating process, it reduces peeling. The quartz coating further blocks the entry of impurities, thereby reducing silicon nitride or silicon carbide inclusions in the silicon ingot. (2) The present invention provides a process for the production of ingot crucibles for semiconductor silicon devices. The fused silica ceramic sleeve can be provided with a porous structure, which can release stress when the silicon liquid adheres. The composite structure is enhanced by injection, slurry molding and drying treatment to improve overall stability, avoid crucible cracking or silicon ingot defects caused by stress concentration, and ensure ingot stability. (3) The present invention provides a process for producing ingot crucibles for semiconductor silicon devices. Compared with the prior art, the content of silicon nitride or silicon carbide inclusions in silicon ingots is reduced by 30%-50%, such as from 0.07ppm to below 0.05ppm in Example 1. The stress release efficiency of the fused silica ceramic sleeve is increased by 20%-25%, and the crucible breakage rate is reduced from 15% in the prior art to below 5%. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is an overall schematic diagram of a manufacturing process for a semiconductor silicon device ingot crucible in this invention; Figure 2 This is a flowchart illustrating the production process of a semiconductor silicon device ingot crucible in this invention.

[0025] Figure label: 1. Fused silica ceramic crucible; 2. Silicon nitride coating; 3. Fused silica ceramic sleeve; 4. Quartz coating. Detailed Implementation

[0026] In view of the shortcomings of the prior art, the inventors of this invention, through long-term research and extensive practice, have proposed the technical solution of this invention. The technical solution, its implementation process, and principles will be further explained below with reference to the accompanying drawings and specific implementation examples in the embodiments of this application.

[0027] It should be noted that the embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention. The described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, the present invention covers any substitutions, modifications, equivalent methods and solutions made on the spirit, principles and scope of the present invention as defined by the claims. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] In the description of this application, the terms "first," "second," "third," and similar words do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "a" or "one," and similar words, do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "comprising" or "including," and similar words, mean that the elements or objects preceding "comprising" or "including" encompass the elements or objects listed following "comprising" or "including," and their equivalents, but do not exclude other elements or objects. The terms "connected" or "linked," and similar words, are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0029] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used solely for the convenience of describing this application and for simplification, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, when using positional terms such as "both sides," "outer side," and "upper and lower," it should be understood that they are used only for ease of understanding and description, taking into account that the structure may be oriented to other positions.

[0030] In the description of this application, unless otherwise expressly specified and limited, the technical or scientific terms used shall have the ordinary meaning understood by a person with ordinary skills in the art to which this application pertains. Terms such as “installation,” “connection,” and “joining” shall be interpreted broadly, for example, as fixed connection, detachable connection, mating connection, or integral connection. For a person skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0031] The present invention aims to introduce and explain the structural composition of a semiconductor silicon device ingot crucible manufacturing process and the matching relationship between the various components. Unless otherwise specified, the dimensions, materials, and manufacturing processes of the various components suitable for the semiconductor silicon device ingot crucible manufacturing process in the present invention can be selected according to specific circumstances, and no special limitations or explanations are given here.

[0032] Furthermore, to provide the public with a better understanding of the present invention, certain specific details are described in detail in the following description of the invention. However, those skilled in the art will fully understand the invention even without these detailed descriptions.

[0033] In the description of this embodiment, terms such as "raw material purity", "particle size", and "coating times" are all specific process parameters. "D50" refers to the median diameter of the particles, "mesh" is a particle size unit, and "a phase content" refers to the mass percentage of the a phase in silicon nitride. The definitions and measurement methods of the above terms are all conventional means in the relevant technical field.

[0034] Example 1

[0035] Please see Figure 1 and Figure 2 A process for manufacturing ingot crucibles for semiconductor silicon devices, comprising: In this embodiment, silicon nitride particles with a D50 of 2 micrometers are used, and quartz coating 4 is applied 3 times. The specific steps are as follows: Raw material preparation Quartz coating material 4: Select natural high-purity quartz sand containing 99.99% silica, and grind it into particles with an average particle size of 100 micrometers; Fused quartz ceramic sleeve 3 raw materials: fine quartz slurry with D50=8 microns and coarse quartz sand with 20 mesh are mixed at a mass ratio of 1:1; Silicon nitride coating 2 raw material: silicon nitride particles with a purity of 99.999%, an α-phase content of 96%, and a D50 of 2 micrometers; Fused quartz ceramic crucible 1 Raw material: Quartz fine slurry with D50=8 microns and 20-mesh quartz coarse sand are mixed at a mass ratio of 1:1, and 1% of the total mass of the raw materials is added as organic crosslinking agent monomer + crosslinking agent combination.

[0036] Molding of fused silica ceramic crucible 1 The raw material of the above-mentioned fused silica ceramic crucible 1 was made into a matrix by injection molding technology, with a purity of 99.8% and a size of 300mm×300mm×200mm.

[0037] Silicon nitride coating 2 formed Silicon nitride particles were mixed with silica sol and water in a mass ratio of 5:1:4 and brushed onto the inner surface of the fused silica ceramic crucible 1 substrate to a thickness of 0.1 mm. After brushing, the mixture was allowed to air dry for 1 hour.

[0038] Molding of Fused Quartz Ceramic Sleeve 3 The fused silica ceramic sleeve 3 is formed by slurry casting with a purity of 99.8%. 2% PVA is added as an organic pore-forming agent and placed on the inner surface of the silicon nitride coating 2 to form a porous structure.

[0039] Quartz coating 4 formation The quartz coating material 4 was ground into coarse particles of 150 micrometers and fine particles of 50 micrometers. These were then mixed with water and silica gel to form slurries. The slurries were applied three times in an alternating pattern of coarse particles, fine particles, and coarse particles, resulting in a coating thickness of 1 mm.

[0040] Composite processing The multi-layer structure, comprising a fused silica ceramic crucible 1, a silicon nitride coating 2, a fused silica ceramic sleeve 3, and a quartz coating 4, is placed in a curing kiln and dried at 60°C for 24 hours.

[0041] Effect description: In this embodiment, the silicon nitride coating 2, due to its D50=2 micrometers and thinness, is tightly bonded to the substrate of the fused silica ceramic crucible 1, reducing the peeling rate by 30%; the quartz coating 4 is coated three times to form a thickness of 1 mm, which can effectively isolate the silicon ingot from the silicon nitride coating 2, reducing the inclusion content in the silicon ingot to below 0.05 ppm; the porous structure of the fused silica ceramic sleeve 3 improves the stress release efficiency by 20%, and no cracking of the fused silica ceramic crucible 1 or defects in the silicon ingot occur.

[0042] Example 2

[0043] In this embodiment, silicon nitride particles with a D50 of 3 micrometers are used, and a quartz coating is applied 5 times. The specific steps are as follows: Raw material preparation Quartz coating material 4: Natural high-purity quartz sand containing 99.99% silica, ground into particles with an average particle size of 200 micrometers; Fused quartz ceramic sleeve 3 raw materials: fine quartz slurry with D50=12 microns and coarse quartz sand with 200 mesh are mixed at a mass ratio of 1:1.2; Silicon nitride coating 2 raw material: silicon nitride particles with a purity of 99.999%, an α phase content of 95%, and a D50 of 3 micrometers; Fused quartz ceramic crucible 1 Raw materials: fine quartz slurry with D50=12 microns and coarse quartz sand with 200 mesh are mixed at a mass ratio of 1:1.2, and 5% of the total mass of raw materials is added as an organic crosslinking agent PVA.

[0044] Molding of fused silica ceramic crucible 1 The matrix was prepared by injection molding, with a purity of 99.8% and the same dimensions as in Example 1.

[0045] Silicon nitride coating 2 formed Silicon nitride particles were mixed with silica sol and water in a mass ratio of 5:1:4 and brushed onto the inner surface of the fused silica ceramic crucible 1 substrate to a thickness of 0.5 mm. The mixture was then allowed to dry for 2 hours.

[0046] Molding of Fused Quartz Ceramic Sleeve 3 The grouting molding sleeve is made by adding monomer and crosslinking agent as pore-forming agent. For example, acrylamide (monomer) and N,N'-methylenebisacrylamide (crosslinking agent) with a mass ratio of 10:1 are added as pore-forming agent, and the amount added is 3% of the total mass of raw materials, and is set on the inner surface of silicon nitride coating 2.

[0047] Quartz coating 4 formation The quartz coating material 4 was ground into coarse particles of 180 micrometers and fine particles of 20 micrometers. It was then coated 5 times in an alternating pattern of coarse particles, fine particles, coarse particles, fine particles, and coarse particles, resulting in a coating thickness of 2 mm.

[0048] Composite processing The multi-layer structure, comprising a fused silica ceramic crucible 1, a silicon nitride coating 2, a fused silica ceramic sleeve 3, and a quartz coating 4, is placed in a curing kiln and dried at 120°C for 8 hours.

[0049] Effect description: When the silicon nitride coating 2 particles have a D50 of 3 micrometers and a thickness of 0.5mm, the isolation effect is enhanced, and the reaction rate between the silicon liquid and the fused silica ceramic crucible 1 is reduced by 40%; when the quartz coating 4 is coated 5 times to form a thickness of 2mm, the density is increased to 98%, and the resistance to silicon liquid erosion is enhanced; drying at 120℃ increases the bonding strength of the fused silica ceramic crucible 1, silicon nitride coating 2, fused silica ceramic sleeve 3, and quartz coating 4 by 15%.

[0050] Example 3

[0051] This embodiment focuses on verifying the relationship between the number of coatings and the thickness of the quartz coating 4. The specific parameters are as follows: When the quartz coating is applied four times, alternating between coarse and fine materials, the coating thickness is 1.5 mm. The results are an inclusion content of 0.06 ppm and a stress release rate of 18%. When the quartz coating 4 is applied 6 times, alternating between coarse, fine, coarse, fine, coarse, and fine layers, the coating thickness is 2.5 mm, and the results are an inclusion content of 0.04 ppm and a stress release rate of 22%. When the quartz coating 4 is applied 7 times, it is applied alternately in the order of coarse material, fine material, coarse material, fine material, coarse material, fine material, coarse material, with a coating thickness of 3 mm. The effect is that the inclusion content is 0.03 ppm and the stress release rate is 25%.

[0052] This embodiment verifies the technical characteristics of quartz coating 4 being applied 3-7 times and having a thickness of 1-3 mm.

[0053] Example 4

[0054] This embodiment verifies the effects of drying temperature and time on the multilayer structure containing fused silica ceramic crucible 1, silicon nitride coating 2, fused silica ceramic sleeve 3, and quartz coating 4. The raw material parameters of Example 1 are used, with only the composite processing steps adjusted. When the drying temperature is 80℃ and the drying time is 16 hours, the bonding strength between the fused silica ceramic crucible 1 and the silicon nitride coating 2, and between the fused silica ceramic sleeve 3 and the quartz coating 4 is 2.8MPa, and the overall structure has a thermal shock resistance of 50 cycles. When the drying temperature is 100℃ and the drying time is 12 hours, the bonding strength of each layer is 3.0MPa and the thermal shock resistance is 55 cycles. When the drying temperature is 120℃ and the drying time is 8 hours, the bonding strength of each layer is 3.2MPa and the thermal shock resistance is 60 cycles.

[0055] Conclusion: By adjusting the particle size of silicon nitride coating 2, the number of coatings of quartz coating 4, and drying parameters, this invention can reduce the inclusion content in silicon ingots by 30%-50%, improve the stress release efficiency of fused quartz ceramic sleeve 3 by 20%-25%, and significantly improve the stability of the ingot casting process, thus meeting the requirements of semiconductor-grade silicon devices for raw material purity.

[0056] This embodiment verifies the technical characteristics of the drying process in step S6, which is carried out in a curing kiln at a drying temperature of 60-120℃ for 8-24 hours.

[0057] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement it accordingly. It should not be considered that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, several simple deductions or substitutions can be made without departing from the concept of the present invention. All equivalent changes or modifications made in accordance with the spirit and essence of the present invention should be covered within the protection scope of the present invention.

Claims

1. A process for the production of a semiconductor silicon ingot crucible, characterized in that, The method comprises the following steps: S1, raw material preparation: prepare the raw material of the quartz coating (4), the raw material of the fused quartz ceramic sleeve (3), the raw material of the silicon nitride coating (2) and the raw material of the fused quartz ceramic crucible (1) respectively; the raw material of the quartz coating (4) is natural high-purity quartz sand containing 99.99% of silicon dioxide, the raw material of the fused quartz ceramic sleeve (3) and the raw material of the fused quartz ceramic crucible (1) are both mixtures of quartz fine slurry with a particle size of 8-12 microns and quartz coarse sand with a particle size of 20-200 meshes, and the raw material of the silicon nitride coating (2) is silicon nitride particles with a purity of >99.999%, an a-phase content of >95% and a particle size of 2-3 microns; S2, forming of the fused quartz ceramic crucible (1): after adding an organic crosslinking agent to the raw material of the fused quartz ceramic crucible (1), the base of the fused quartz ceramic crucible (1) is prepared by injection molding technology, and the purity of the base is 99.8%; S3, forming of the silicon nitride coating (2): after mixing the raw material of the silicon nitride coating (2) with silica sol and water, the silicon nitride coating (2) is formed by brushing on the inner surface of the base of the fused quartz ceramic crucible (1); S4, forming of the fused quartz ceramic sleeve (3): the raw material of the fused quartz ceramic sleeve (3) is injected and formed into the fused quartz ceramic sleeve (3) with a purity of 99.8%, and the fused quartz ceramic sleeve (3) is arranged on the inner surface of the silicon nitride coating (2); S5, forming of the quartz coating (4): the raw material of the quartz coating (4) is prepared into slurry with an average particle size of 1-200 microns, and the quartz coating (4) is formed by coating the inner surface of the fused quartz ceramic sleeve (3); S6, composite treatment: the above multi-layer structure is subjected to drying treatment.

2. A process for the production of ingot crucibles for semiconductor silicon devices as claimed in claim 1, wherein: In step S5, the preparation of the slurry of the quartz coating (4) comprises: grinding the quartz particles into two specifications of different sizes, and mixing them with water and silica gel respectively; the coating process is that the coarse and fine slurries are alternately coated for 3-7 times, and the coating thickness is 1-3 mm.

3. The process for producing a crucible for a semiconductor silicon ingot according to claim 1, wherein: In step S4, the fused quartz ceramic sleeve (3) has a porous structure, and the porous structure is formed by adding an organic substance to the raw material of the fused quartz ceramic sleeve (3) and decomposing the organic substance after heating to leave pores.

4. A process for the production of a crucible for the casting of ingots of semiconducting silicon according to claim 3, characterized in that: The organic substance is a combination of monomers and crosslinking agents or PVA.

5. The process for production of ingot crucible for semiconductor silicon device according to claim 1, wherein: In step S2, the amount of the added organic crosslinking agent in the injection molding technology of the fused quartz ceramic crucible (1) is 1-5% of the total mass of the raw material.

6. The process for producing a crucible for a semiconductor silicon ingot according to claim 1, wherein: In step S3, the brushing thickness of the silicon nitride coating (2) is 0.1-0.5 mm, and the brushing is naturally air-dried for 1-2 hours.

7. The process for producing a crucible for a semiconductor silicon ingot according to claim 1, wherein: The drying treatment in step S6 is carried out in a curing kiln, the drying temperature is 60-120°C, and the drying time is 8-24 hours.

8. A process for the production of a crucible for semiconductor silicon ingot according to claim 2, characterized in that: The mixing ratio of the coarse and fine slurries is fine slurry: coarse sand = 1:(0.8-1.2).

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