Mask for manufacturing display panel

Abstract

The mask includes a first silicon nitride layer and a first reinforcement layer, where the first silicon nitride layer has a first pattern for deposition of the display panel. The first reinforcing layer is formed on the first silicon nitride layer and has a second pattern corresponding to the first pattern, and a brittleness of the first reinforcing layer is lower than a brittleness of the first silicon nitride layer.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0084272, filed on June 27, 2024, and all benefits arising therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present invention relates to masks for manufacturing display devices and electronic devices having display devices. Background Technology

[0004] The display panel of the display device includes multiple pixels, each of which includes a driving element such as a transistor and a display element such as an organic light-emitting element. The display element can be formed by stacking electrodes and various functional layers on a substrate.

[0005] A patterning process using a mask with an opening area defined as a penetrating mask provides a functional layer constituting a display element. In this case, the shape of the patterned functional layer can be controlled according to the shape of the opening area of ​​the mask, etc. As the resolution of the display panel increases, the mask pattern becomes more refined and the mask thickness decreases. Summary of the Invention

[0006] The present invention provides a mask with enhanced strength, which is used in the manufacturing process of high-resolution display panels.

[0007] According to an embodiment, the mask may include a first silicon nitride layer and a first reinforcing layer. The first silicon nitride layer may have a first pattern for deposition for a display panel. The first reinforcing layer may be formed on the first silicon nitride layer and may have a second pattern corresponding to the first pattern. The brittleness of the first reinforcing layer may be lower than that of the first silicon nitride layer.

[0008] In an implementation, the mask may further include a base layer, wherein the base layer may be located below the first silicon nitride layer and may have a third pattern.

[0009] In an embodiment, the mask may further include a second reinforcing layer, which may be formed below the first silicon nitride layer and may have a fourth pattern corresponding to the first pattern.

[0010] In one embodiment, a second reinforcing layer may be formed within an opening in the base layer. The opening in the base layer may be defined by a third pattern.

[0011] In some implementations, the base layer may include silicon.

[0012] In an implementation, the mask may further include a second silicon nitride layer formed beneath the base layer.

[0013] In one embodiment, the first reinforcing layer may include photosensitive polyimide.

[0014] In one embodiment, the first reinforcing layer can be formed by performing a curing process on a layer formed of photosensitive polyimide. A second pattern can be formed in this layer.

[0015] In one embodiment, the size of the opening defined by the second pattern may be larger than the size of the opening defined by the first pattern.

[0016] In one embodiment, the angle between the inner surface of the opening defined by the second pattern and the lower surface of the first reinforcing layer may be smaller than the angle between the inner surface of the opening defined by the first pattern and the lower surface of the first silicon nitride layer.

[0017] In one embodiment, the mask may include a base layer, a first silicon nitride layer, and a reinforcing layer. The base layer may have a first opening, and the first silicon nitride layer may be formed on the base layer and may have a first pattern for deposition for a display panel. The reinforcing layer may be formed within the first opening of the base layer below the first silicon nitride layer and may have a second pattern corresponding to the first pattern. The reinforcing layer may be less brittle than the first silicon nitride layer.

[0018] In some implementations, the base layer may include silicon.

[0019] In an implementation, the mask may further include a second silicon nitride layer formed beneath the base layer.

[0020] In some embodiments, the reinforcing layer may include photosensitive polyimide.

[0021] In one embodiment, the reinforcing layer can be formed by performing a curing process on a layer formed of photosensitive polyimide. A second pattern can be formed in this layer.

[0022] In one embodiment, the size of the opening defined by the second pattern may be larger than the size of the opening defined by the first pattern.

[0023] In one embodiment, the angle between the inner surface of the opening defined by the second pattern and the upper surface of the reinforcing layer may be smaller than the angle between the inner surface of the opening defined by the first pattern and the lower surface of the first silicon nitride layer.

[0024] In one implementation, the base layer may be located below the first silicon nitride layer and may include a third pattern.

[0025] In one embodiment, the electronic device may include a display device having a display panel including display elements. The display elements may include a functional layer formed using a patterning process with a mask. The mask may include a first silicon nitride layer and a first reinforcing layer. The first silicon nitride layer may have a first pattern for deposition for the display panel. The first reinforcing layer may be formed on the first silicon nitride layer and may have a second pattern corresponding to the first pattern. The brittleness of the first reinforcing layer may be less than that of the first silicon nitride layer.

[0026] In an implementation, the mask may further include a base layer, wherein the base layer may be located below the first silicon nitride layer and may have a third pattern.

[0027] In an embodiment, the mask may further include a second reinforcing layer, which may be formed below the first silicon nitride layer and may have a fourth pattern corresponding to the first pattern.

[0028] In one embodiment, a second reinforcing layer may be formed within an opening in the base layer. The opening in the base layer may be defined by a third pattern.

[0029] In some implementations, the base layer may include silicon.

[0030] In an implementation, the mask may further include a second silicon nitride layer formed beneath the base layer.

[0031] In one embodiment, the first reinforcing layer may include photosensitive polyimide.

[0032] In one embodiment, the first reinforcing layer can be formed by performing a curing process on a layer formed of photosensitive polyimide. A second pattern can then be formed therein.

[0033] In one embodiment, the size of the opening defined by the second pattern may be larger than the size of the opening defined by the first pattern.

[0034] In one embodiment, the angle between the inner surface of the opening defined by the second pattern and the lower surface of the first reinforcing layer may be smaller than the angle between the inner surface of the opening defined by the first pattern and the lower surface of the first silicon nitride layer. Attached Figure Description

[0035] The accompanying drawings illustrate exemplary embodiments of the present invention and, together with the specification, serve to illustrate the principles of the invention. The drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification.

[0036] Figure 1 This is a cross-sectional view of a deposition apparatus according to an embodiment.

[0037] Figure 2It is a plan view of a display panel formed by a deposition apparatus according to an embodiment.

[0038] Figure 3 It is cut along line I-I' according to the implementation method. Figure 2 A cross-sectional view of the display panel.

[0039] Figure 4 This is an exploded perspective view showing an example of a mask assembly including a mask and a mask frame according to an embodiment.

[0040] Figure 5A This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0041] Figure 5B This is a cross-sectional view showing the process for manufacturing a mask according to an embodiment.

[0042] Figure 5C This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0043] Figure 5D This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0044] Figure 5E This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0045] Figure 5F This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0046] Figure 5G This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0047] Figure 5H This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0048] Figure 5I This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0049] Figure 5J This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0050] Figure 6A This is a cross-sectional view illustrating a process for manufacturing a mask according to another embodiment.

[0051] Figure 6B This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0052] Figure 6CThis is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0053] Figure 6D This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0054] Figure 6E This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0055] Figure 6F This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0056] Figure 6G This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0057] Figure 6H This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0058] Figure 6I This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0059] Figure 6J This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0060] Figure 6K This is a cross-sectional view illustrating the process steps for manufacturing a mask according to another embodiment.

[0061] Figure 7A This shows the implementation details. Figure 6K A diagram of an example of region A in the figure.

[0062] Figure 7B This shows the implementation details. Figure 6K A diagram of an example of region A in the figure.

[0063] Figure 8A This is a cross-sectional view illustrating a process for manufacturing a mask according to yet another embodiment.

[0064] Figure 8B This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0065] Figure 8C This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0066] Figure 8D This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0067] Figure 8E This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0068] Figure 8F This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0069] Figure 8G This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0070] Figure 8H This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0071] Figure 8I This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0072] Figure 8J This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0073] Figure 8K This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0074] Figure 8L This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0075] Figure 9A This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0076] Figure 9B This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0077] Figure 9C This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0078] Figure 9D This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0079] Figure 9E This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0080] Figure 9F This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0081] Figure 9G This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0082] Figure 9H This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0083] Figure 9I This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0084] Figure 9J This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0085] Figure 9K This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0086] Figure 9L This is a cross-sectional view showing the process steps for manufacturing a mask according to yet another embodiment.

[0087] Figure 10 This is a block diagram of an electronic device according to an embodiment.

[0088] Figure 11 Schematic diagrams illustrating various embodiments of the electronic device are shown. Detailed Implementation

[0089] In the following, various embodiments of the invention will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement the invention. The invention can be embodied in various different forms and is not limited to the embodiments described herein.

[0090] To clearly describe the invention, irrelevant details have been omitted, and the same reference numerals refer to the same or similar parts throughout the specification. Therefore, the reference numerals described above can also be used in other figures.

[0091] Furthermore, for ease of description, the dimensions and thicknesses of each component shown in the figures are arbitrarily illustrated, and therefore the invention is not limited to the dimensions and thicknesses of each component shown in the figures. In the figures, thicknesses may be exaggerated to clearly represent layers and regions.

[0092] Furthermore, in the description, the phrase "are the same" can mean "substantially the same." That is, they can be so similar that a person skilled in the art would be certain they are the same. In other expressions, "substantially" can be omitted.

[0093] Throughout this specification, when describing an element as "connected" to another element, this includes not only "direct connection" but also "indirect connection" where another element is inserted between them. The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the scope of the invention. Throughout this specification, unless specifically described to the contrary, the word "comprising" and variations such as "including" or "comprising of" are to be understood as implying the inclusion of stated elements but not excluding any other elements. The terms "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XY, YZ, and XZ). As used herein, the term "and / or" includes any one of the respective configurations or all combinations of one or more of the respective configurations.

[0094] Although the terms "first," "second," etc., may be used herein to describe various constituent elements, these constituent elements should not be limited by these terms. These terms are used to distinguish one constituent element from another. Therefore, without departing from the teachings of the invention, the first constituent element discussed below may be referred to as the second constituent element.

[0095] For descriptive purposes, spatially relative terms such as “below” and “above” may be used herein to describe the relationship between one element or feature and another element(s)(s) shown in the accompanying drawings. In addition to the orientations depicted in the drawings, the spatially relative terms are intended to encompass different orientations of the device when in use, operation, and / or manufacture. For example, if the device in the drawings is flipped, an element described as being “below” other elements or features is positioned in an orientation “above” other elements or features. Thus, the term “below” can encompass both the orientations of “above” and “below”. Furthermore, the device may be oriented in other directions (e.g., rotated 90 degrees or in a different orientation), and therefore, the spatially relative terms used herein shall be interpreted accordingly.

[0096] Various embodiments are described herein with reference to the accompanying drawings, which illustrate preferred embodiments. Therefore, it should be understood that the shapes shown may vary according to the scope of the invention (e.g., tolerances and / or manufacturing techniques). Consequently, the embodiments disclosed herein should not be construed as limited to the specific shapes shown, but should be interpreted to include variations in shape caused, for example, by manufacturing processes. As noted above, the shapes shown in the drawings may not be intended to show the actual shape of an area of ​​the device, and the invention is not limited thereto.

[0097] Figure 1 This is a cross-sectional view of a deposition apparatus according to an embodiment.

[0098] In the implementation and reference Figure 1 The deposition apparatus EDA may include a deposition chamber CB, a fixing component CM, a deposition source DS disposed inside the deposition chamber CB, and a mask assembly MK disposed inside the deposition chamber CB. Although not shown separately, the deposition apparatus EDA may also include mechanical means for implementing an inline system.

[0099] In an embodiment, the deposition chamber CB can be configured for vacuum deposition conditions and may include a bottom surface, a ceiling surface, and sidewalls. The bottom surface of the deposition chamber CB may be oriented parallel to a plane defined by a first direction DR1 and a second direction DR2. The normal direction relative to the bottom surface of the deposition chamber CB may be indicated by a third direction DR3.

[0100] In one embodiment, the fixing member CM can be disposed inside the deposition chamber CB, above the deposition source DS, and can fix the mask assembly MK. The fixing member CM can be mounted on the ceiling surface of the deposition chamber CB and can include a clamp or robotic arm for holding the mask assembly MK.

[0101] In one embodiment, the fixing member CM may include a support member BD and a magnet MM connected to the support member BD. The support member BD may include a plate as a basic structure for fixing the mask assembly MK, but the invention is not limited thereto. The magnet MM may be disposed inside or outside the support member BD and may magnetically fix the mask assembly MK.

[0102] In one implementation, the deposition source DS can evaporate the deposition material, thereby releasing deposition vapor. The deposition vapor can pass through the mask assembly MK and can be deposited on the display panel DP in a predetermined pattern. In the intermediary process for manufacturing the complete display panel DP, which will be described later, the display panel DP can be defined as a substrate.

[0103] In one embodiment, the mask assembly MK can be disposed inside the deposition chamber CB, above the deposition source DS, and can support the display panel DP. The display panel DP can include a glass substrate or a plastic substrate, wherein the display panel DP can include a polymer layer disposed on the base substrate.

[0104] Figure 2 This is a plan view of a display panel formed by a deposition apparatus according to an embodiment. More specifically, Figure 2 According to the embodiment, EDA is obtained through a deposition apparatus (see [link]). Figure 1 A plan view of the manufactured display panel DP. Multiple display panel DPs are set up... Figure 1 The deposition process can be performed simultaneously on the mask assembly MK shown.

[0105] In the implementation and reference Figure 2 The display panel DP may include an active area AA and a peripheral area NAA. The display panel DP may include a first emitting area PXA-R, a second emitting area PXA-G, and a third emitting area PXA-B, which are distinct from each other within the active area AA. For example, the first emitting area PXA-R may be a red emitting area emitting red light, the second emitting area PXA-G may be a green emitting area emitting green light, and the third emitting area PXA-B may be a blue emitting area emitting blue light.

[0106] In this embodiment, when viewed on a plane defined by the first direction DR1 and the second direction DR2, the luminescent regions PXA-R, PXA-G, and PXA-B may not overlap and may be distinct from each other. The region between adjacent luminescent regions PXA-R, PXA-G, and PXA-B may be defined as a non-luminescent region NPXA.

[0107] In the implementation, Figure 1 and Figure 2 The display panel DP shown may include at least one functional layer manufactured using a mask MS. For example, according to an embodiment, a functional layer in the form of a "common layer" included in the functional layers of the display panel DP may be provided using a mask MS, the "common layer" being configured to overlap with all of the plurality of light-emitting regions PXA-R, PXA-G, and PXA-B.

[0108] According to the embodiment, the light-emitting areas PXA-R, PXA-G, and PXA-B of the display panel DP can be arranged in a stripe shape. That is, a plurality of first light-emitting areas PXA-R, a plurality of second light-emitting areas PXA-G, and a plurality of third light-emitting areas PXA-B can be arranged alternately along a first direction DR1, and light-emitting areas providing light of the same color can be arranged spaced apart from each other along a second direction DR2.

[0109] In the implementation, the arrangement of the light-emitting regions PXA-R, PXA-G, and PXA-B is not limited to this, and the order in which the first light-emitting region PXA-R, the second light-emitting region PXA-G, and the third light-emitting region PXA-B are arranged can be set in various combinations according to the display quality characteristics required by the display panel DP.

[0110] For example, in an implementation, the light-emitting regions PXA-R, PXA-G, and PXA-B can have a diamond array configuration. ®Structure. In addition, the areas of the light-emitting areas PXA-R, PXA-G, and PXA-B can also be different from each other, and the arrangement and area can be adjusted or modified in various ways according to the display quality characteristics required by the display panel DP.

[0111] Figure 3 It is according to the implementation method along Figure 2 The sectional view taken by line I-I' in the middle.

[0112] In the implementation and reference Figure 3 via deposition equipment EDA (see Figure 1 The formed display panel DP can be combined with an optical layer PP and a cover substrate BL disposed on the display panel DP to form a display device DD. The display panel DP may include multiple light-emitting elements ED-1, ED-2, and ED-3. The optical layer PP may be disposed on the display panel DP to control the light reflected from the display panel DP due to external light. The optical layer PP may include, for example, a polarizing layer or a color filter layer. In another embodiment, the optical layer PP may be omitted in the display device DD.

[0113] In one embodiment, a cover substrate BL can be disposed on the optical layer PP, wherein the cover substrate BL can be a component providing a base surface on which the optical layer PP is disposed. The cover substrate BL can be an inorganic layer, an organic layer, or a composite material layer. Furthermore, unlike that shown in the accompanying drawings, in one embodiment, the cover substrate BL may be omitted.

[0114] In this embodiment, the display panel DP may include a base layer BS, a circuit layer DP-CL disposed on the base layer BS, and a display element layer DP-ED. The display element layer DP-ED may include light-emitting elements ED-1, ED-2, and ED-3. Furthermore, the display panel DP may include a TFE encapsulation layer disposed on the display element layer DP-ED.

[0115] In this implementation, the display panel DP can be an organic electroluminescent display panel that includes organic electroluminescent elements in the display element layer DP-ED. That is, when forming a portion of the functional layer of the display element layer DP-ED of the organic electroluminescent display panel, a mask MS (see [link to documentation]) can be used. Figure 1 ).

[0116] In one implementation, the circuit layer DP-CL may be disposed on the base layer BS, and the circuit layer DP-CL may include a plurality of transistors (not shown), each of which may include a control electrode, an input electrode, and an output electrode. Furthermore, the circuit layer DP-CL may include a plurality of insulating layers.

[0117] In this embodiment, the encapsulation layer TFE can cover the light-emitting elements ED-1, ED-2, and ED-3, and can seal the display element layer DP-ED. The encapsulation layer TFE can be a thin-film encapsulation layer.

[0118] In an embodiment, each of the light-emitting elements ED-1, ED-2 and ED-3 may include a first electrode EL1, a hole transport region HTR, a light-emitting layer EML-R, EML-G or EML-B, an electron transport region ETR and a second electrode EL2.

[0119] In one embodiment, the first electrode EL1 of each of the light-emitting elements ED-1, ED-2, and ED-3 may be exposed at least partially through a display opening OH defined by the pixel defining layer PDL. The light-emitting layers EML-R, EML-G, or EML-B may be disposed within the display opening OH, and the hole transport region HTR, electron transport region ETR, and second electrode EL2 may be configured as a common layer extending throughout the light-emitting elements ED-1, ED-2, and ED-3.

[0120] In an embodiment, at least one of the hole transport region HTR, electron transport region ETR, and second electrode EL2, which are set as a common layer in the light-emitting elements ED-1, ED-2, and ED-3 of the display panel DP, can be set using the mask MS of the present invention.

[0121] Meanwhile, some of the insulating layers, including those in the circuit layer DP-CL or the encapsulation layer TFE disposed on the light-emitting elements ED-1, ED-2, and ED-3, can also be masked using a mask MS (see [link to documentation]). Figure 1 and Figure 4 )set up.

[0122] Figure 4 This is an exploded perspective view showing an example of a mask assembly including a mask and a mask frame according to an embodiment. Figure 4 In this context, the direction opposite to that of DR3 to the third party can be defined as the fourth direction DR4.

[0123] In the implementation and reference Figure 4 The mask assembly MK may include a mask MS and a mask frame FR. In one embodiment, the mask assembly MK may be used to form a common layer comprising the same material on a target substrate serving as a deposition surface. In another embodiment, the mask assembly MK may include an aperture mask for thin-film processes used to form functional layers configured as thin films, wherein the aperture mask for thin-film processes may be a mask for stacking thin-film layers of the same material across a single display device DD on the target substrate.

[0124] In this implementation, the mask frame FR can support the mask MS. For example, the mask frame FR can have a frame opening FR-OP defined within the mask frame FR, and the mask MS can be disposed within the frame opening FR-OP. More specifically, the mask frame FR can have an upper surface and a lower surface oriented perpendicular to a third direction DR3. Meanwhile, the frame opening FR-OP can be defined by a plurality of inner surfaces oriented perpendicular to the upper surface. The plurality of inner surfaces defining the frame opening FR-OP can also be oriented perpendicular to the lower surface.

[0125] In one embodiment, the mask frame FR can support the edge portion of the mask MS. In another embodiment, the mask frame FR can be disposed below the mask MS, wherein the mask MS can be mounted on the mask frame FR. For example, the mask frame FR may include a support surface SS supporting the mask MS on its inner side, a frame opening FR-OP is defined in the mask frame FR, and the mask MS can be disposed on the support surface SS. However, the invention is not limited thereto. The mask frame FR can be disposed on the edges of the upper and lower surfaces of the mask MS to support the mask MS. In another embodiment, the mask MS can be fixed to the mask frame FR.

[0126] In this embodiment, the mask frame FR can be formed of a metallic material including at least one of iron (Fe) and nickel (Ni). For example, the mask frame FR can include an alloy of iron and nickel. The mask frame FR can be manufactured in materials including stainless steel (SUS), Invar alloy, etc.

[0127] In one embodiment, the mask MS may include at least one opening region OP. In another embodiment, when viewed in a plane, the mask MS may include a plurality of opening regions OP spaced apart from each other.

[0128] In an implementation, the plurality of opening regions OP may be defined to be aligned on a plane defined by a first direction DR1 and a second direction DR2. Figure 4 An embodiment of a mask MS is illustrated, in which five opening regions OP are defined along a first direction DR1 and are spaced apart from each other along the first direction DR1, and two opening regions OP are defined along a second direction DR2 and are spaced apart from each other along the second direction DR2. However, this is merely an example, and the number of opening regions OP is not limited to the number shown in the figures. The opening regions OP can be arranged to have a constant separation interval along one of the first direction DR1 and the second direction DR2. In this embodiment, material for forming a functional layer in the form of a common layer can be deposited onto the target substrate through each of the multiple opening regions OP.

[0129] According to an embodiment, the mask MS may have a plate shape extending along a first direction DR1 and a second direction DR2. In an embodiment, when viewed in a plane defined by the first direction DR1 and the second direction DR2, the mask MS may have a square shape. However, the present invention is not limited thereto. In an embodiment, the shape of the mask MS may be configured in different forms depending on the shape of the target substrate as the deposition surface, the shape of the mask frame FR supporting the mask MS, etc.

[0130] Furthermore, in the mask MS, according to an embodiment, the opening region OP can have a square shape when viewed in a plane. However, the present invention is not limited to this. Therefore, in an embodiment, the shape of the opening region OP can be modified to have various shapes depending on the shape of the functional layer formed by depositing it on the target substrate.

[0131] In an implementation, the mask MS may include a lower surface (or first surface) MS-DS and an upper surface (or second surface) MS-US facing each other.

[0132] In an embodiment, the mask MS may include a silicon nitride (SiN) film, wherein the silicon nitride film may be formed by a chemical vapor deposition process such as plasma enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), or low-temperature chemical vapor deposition (LTCVD).

[0133] In this embodiment, the silicon nitride film can have relatively high hardness and therefore can be used as a film. Furthermore, because the silicon nitride film has high heat resistance and high oxidation resistance, it can be applied to both sides of a wafer.

[0134] Figures 5A to 5J This is a cross-sectional view illustrating a process for manufacturing a mask according to an embodiment.

[0135] In the implementation and reference Figure 5A and Figure 5B A base layer 100 can be configured to fabricate a mask MS, wherein the base layer 100 may include silicon and can be configured in the form of a silicon wafer. (See reference) Figure 5B A first silicon nitride layer 105a can be formed on the upper surface of the base layer 100, and a second silicon nitride layer 105b can be formed on the lower surface of the base layer 100. The silicon nitride layers 105a and 105b can be formed on the upper and lower surfaces of the base layer 100 by processes such as plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), or low-temperature chemical vapor deposition (LTCVD).

[0136] In the implementation and reference Figure 5CA photosensitive layer 110 can be formed on the first silicon nitride layer 105a, wherein the photosensitive layer 110 can be formed to correspond to the pattern that the mask MS will ultimately have. It can be formed using photolithography. Figure 5C The photosensitive layer 110 is formed by applying a photosensitive agent (photoresist) onto the first silicon nitride layer 105a and forming a pattern corresponding to the mask MS on the photosensitive agent using an exposure process. Subsequently, the photosensitive layer 110 is formed by removing unwanted portions of the photosensitive agent using a developer. Furthermore, a hard baking process can be performed on the photosensitive layer 110 for subsequent etching processes.

[0137] Subsequently, in the implementation method, it is possible to Figure 5C An etching process is performed on the first silicon nitride layer 105a. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 110 can be formed on the first silicon nitride layer 105a. In the embodiment and with reference to... Figure 5D The image shows a first silicon nitride layer 105a' patterned by an etching process. In this embodiment, a dry etching process can be applied to form a fine pattern.

[0138] In the implementation and reference Figure 5E The photosensitive layer 110 on the patterned first silicon nitride layer 105a' can be removed. In one embodiment, the photosensitive layer 110 can be removed using a developer. Thus, the patterned first silicon nitride layer 105a' can be exposed.

[0139] In the implementation and reference Figure 5F A protective layer 115 can be formed on the patterned first silicon nitride layer 105a'. In one embodiment, a photosensitive solution can be coated on the patterned first silicon nitride layer 105a' to form the protective layer 115. When the protective layer 115 is formed, it can protect the patterned first silicon nitride layer 105a' on the upper surface of the base layer 100.

[0140] In the implementation and reference Figure 5G A photosensitive layer 120 can be formed below the second silicon nitride layer 105b, wherein... Figure 5G The photosensitive layer 120 can be used with the reference Figure 5C The photosensitive layer 110 described is formed in the same manner. Figure 5G The photosensitive layer 120 can be formed with a pattern corresponding to the edge of the mask MS. It can be formed using photolithography. Figure 5G The photosensitive layer is 120. (As already referenced...) Figure 5C The photolithography process has been described, so redundant details will be omitted. Further details can be found later. Figure 5GAn etching process is performed on the second silicon nitride layer 105b. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 120 can be formed on the second silicon nitride layer 105b.

[0141] In the implementation and reference Figure 5H The image shows a second silicon nitride layer 105b' patterned by an etching process.

[0142] In the implementation and reference Figure 5I The photosensitive layer 120 disposed beneath the patterned second silicon nitride layer 105b' can be removed. In this embodiment, a developer can be used to remove the photosensitive layer 120. Therefore, the patterned second silicon nitride layer 105b' can be exposed. Simultaneously, in this process, the protective layer 115 on the patterned first silicon nitride layer 105a' can be removed. Therefore, the patterned first silicon nitride layer 105a' can be exposed.

[0143] In the implementation and reference Figure 5J Unnecessary portions of the base layer 100 can be removed. Specifically, portions of the base layer 100 exposed by openings in the patterned silicon nitride layers 105a' and 105b' can be etched and removed. In this embodiment, a tetramethylammonium hydroxide (TMAH) solution can be used to etch the base layer 100 formed from a silicon wafer. TMAH can be a strongly alkaline organic compound and can be used as an etchant for silicon materials. By removing unnecessary portions of the base layer 100, the mask MSa can finally be completed. Figure 5J The mask MSa shown can be Figure 4 The implementation of the mask MS shown is illustrated. More specifically, Figure 5J It can correspond to Figure 4 A sectional view along line II-II'. However, in Figure 5J Only the middle part is shown Figure 4 The mask MS is used, and the mask frame FR is omitted.

[0144] In the implementation and again refer to Figure 5J A single layer of silicon nitride can be used as a thin film to form the pattern of a mask MSa. When the thickness of the film on which the pattern is formed is thick, it may be difficult to form fine patterns in a display panel DP. That is, as the resolution of the display panel DP increases, the pattern of the mask MSa becomes more intricate, and at the same time, the thickness of the first silicon nitride layer 105a' with the pattern needs to be reduced. Since silicon nitride films are relatively brittle, the risk of damage to the mask MSa may increase as the thickness of the first silicon nitride layer 105a' decreases. Therefore, when manufacturing masks for high-resolution display panels, it is necessary to increase the durability of the silicon nitride film.

[0145] According to another embodiment of the mask, a reinforcing layer can be formed on the upper or lower surface of the patterned silicon nitride layer thereon. Therefore, the possibility of damage to the mask MSa can be reduced.

[0146] Figures 6A to 6K This is a cross-sectional view illustrating a process for manufacturing a mask according to another embodiment. References will be omitted below. Figures 5A to 5J Descriptions of overlapping content.

[0147] In the implementation and reference Figure 6A and Figure 6B A base layer 100 for manufacturing a mask MS can be provided. In an embodiment, the base layer 100 can be provided in the form of a silicon wafer. (See reference...) Figure 6B A first silicon nitride layer 105a can be formed on the upper surface of the base layer 100, and a second silicon nitride layer 105b can be formed on the lower surface of the base layer 100.

[0148] In the implementation and reference Figure 6C A photosensitive layer 110 can be formed on the first silicon nitride layer 105a, wherein the photosensitive layer 110 can be formed to correspond to the pattern that the mask MS will ultimately have. It can be formed using photolithography. Figure 6C The photosensitive layer 110.

[0149] Subsequently, in the implementation method, it is possible to Figure 6C An etching process is performed on the first silicon nitride layer 105a. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 110 can be formed on the first silicon nitride layer 105a. In the embodiment and with reference to... Figure 6D The image shows a first silicon nitride layer 105a' patterned by an etching process. In one embodiment, a dry etching process can be used to form a fine pattern.

[0150] In the implementation and reference Figure 6E The photosensitive layer 110 on the patterned first silicon nitride layer 105a' can be removed. Therefore, the patterned first silicon nitride layer 105a' can be exposed.

[0151] In the implementation and reference Figure 6F A reinforcing layer 200 can be formed on the patterned first silicon nitride layer 105a'. In embodiments, the material forming the reinforcing layer 200 may be less brittle than the material forming the first silicon nitride layer 105a'. For example, the reinforcing layer 200 may comprise photosensitive polyimide (PSPI). However, this is merely an example, and the material forming the reinforcing layer 200 may be selected from materials other than photosensitive polyimide that have lower brittleness than the patterned first silicon nitride layer 105a'.

[0152] Subsequently, in the implementation, it can be done by using, as referenced Figures 6C to 6E The described photolithography process selectively etches the reinforcement layer 200 to form, as Figure 6G The patterned reinforcing layer 200' shown is illustrated. When the reinforcing layer 200 is composed of photosensitive polyimide, a process for curing the patterned reinforcing layer 200' can be selectively performed.

[0153] In one embodiment, the pattern of the reinforcing layer 200' can be substantially the same as the pattern of the first silicon nitride layer 105a'. However, since the reinforcing layer 200' is added on top of the first silicon nitride layer 105a', it may be disadvantageous to apply fine processes when manufacturing the display panel DP. Therefore, in one embodiment, the size of the opening defined by the pattern of the reinforcing layer 200' can be larger than the size of the opening defined by the pattern of the first silicon nitride layer 105a'. This will be referred to later. Figure 7A describe.

[0154] In another embodiment, in a cross-sectional view, the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 200' and the lower surface of the reinforcing layer 200' may be smaller than the angle between the inner surface of the opening defined by the pattern of the first silicon nitride layer 105a' and the lower surface of the first silicon nitride layer 105a'. This will be referred to later. Figure 7B describe.

[0155] Subsequently, in the implementation methods and with reference to Figure 6H A protective layer 115 can be formed on the first silicon nitride layer 105a' and the reinforcing layer 200'. In one embodiment, a photosensitive solution can be coated onto the patterned first silicon nitride layer 105a' and the reinforcing layer 200' to form the protective layer 115. When the protective layer 115 is formed, it can protect the first silicon nitride layer 105a' and the reinforcing layer 200'.

[0156] In the implementation and reference Figure 6I A photosensitive layer 120 can be formed below the second silicon nitride layer 105b. As described above, Figure 6I The photosensitive layer 120 can be formed with a pattern corresponding to the edge of the mask MS. It can be formed using photolithography. Figure 6I The photosensitive layer is 120.

[0157] After that, it is possible Figure 6I An etching process is performed on the second silicon nitride layer 105b. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 120 can be formed on the second silicon nitride layer 105b. In the embodiment and with reference to... Figure 6J The image shows a second silicon nitride layer 105b' patterned by an etching process.

[0158] In the implementation and reference Figure 6K The photosensitive layer 120 beneath the patterned second silicon nitride layer 105b' can be removed. In this embodiment, the photosensitive layer 120 can be removed using a developer. Therefore, the patterned second silicon nitride layer 105b' can be exposed. Simultaneously, in this process, the protective layer 115 on the patterned first silicon nitride layer 105a' and the reinforcing layer 200' can be removed. Therefore, the patterned first silicon nitride layer 105a' and the reinforcing layer 200' can be exposed. Meanwhile, refer to... Figure 6K Unnecessary portions of the base layer 100 can be removed. That is, portions of the base layer 100 exposed by the openings of the patterned reinforcing layer 200', the openings of the first silicon nitride layer 105a', and the openings of the second silicon nitride layer 105b' can be etched and removed.

[0159] In this implementation, the mask MSb can be completed by removing unnecessary portions of the base layer 100. Figure 6K The mask MSb shown can be Figure 4 The implementation of the mask MS shown is illustrated.

[0160] In the implementation and reference Figure 6K A reinforcing layer 200' can be formed on the first silicon nitride layer 105a', which is a thin film forming the pattern of the mask MSb. Since the reinforcing layer 200' is less brittle than the first silicon nitride layer 105a', the durability of the mask MSb used in manufacturing high-resolution display panels can be improved. Meanwhile, references... Figure 7A and Figure 7B An embodiment of the reinforcing layer 200' formed on the first silicon nitride layer 105a' is described.

[0161] Figure 7A and Figure 7B To show in more detail Figure 6K A diagram illustrating an example implementation of region A in the diagram.

[0162] In the implementation and reference Figure 7A The diagram illustrates a reinforcing layer 200' formed on a first silicon nitride layer 105a'. As described above, the pattern of the reinforcing layer 200' can be substantially the same as the pattern of the first silicon nitride layer 105a'. However, in this case, it may be disadvantageous to apply fine processes when manufacturing the display panel DP. According to an embodiment, the size of the opening defined by the pattern of the reinforcing layer 200' can be larger than the size of the opening defined by the pattern of the first silicon nitride layer 105a'. Figure 7AAs shown, the first directional length d2 of the opening defined by the pattern of the reinforcing layer 200' can be greater than the first directional length d1 of the opening defined by the pattern of the first silicon nitride layer 105a'. Therefore, even if the thickness of the patterned area of ​​the mask MSb is increased by additionally forming the reinforcing layer 200' on the first silicon nitride layer 105a', fine patterns can be formed in a high-resolution display panel.

[0163] In the implementation and reference Figure 7B Another embodiment of the reinforcing layer 200' formed on the first silicon nitride layer 105a' is shown. In order to form a fine pattern in the high-resolution display panel even though the thickness of the patterned area of ​​the mask MSb is increased due to the additional formation of the reinforcing layer 200' on the first silicon nitride layer 105a', the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 200' and the lower surface of the reinforcing layer 200' can be smaller than the angle between the inner surface of the opening defined by the pattern of the first silicon nitride layer 105a' and the lower surface of the first silicon nitride layer 105a'.

[0164] Specifically, in Figure 7B In the diagram, the angle between the inner surface of the opening defined by the pattern of the first silicon nitride layer 105a' and the lower surface of the first silicon nitride layer 105a' is shown to be approximately 90 degrees. Furthermore, in... Figure 7B In this case, the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 200' and the lower surface of the reinforcing layer 200' is less than about 90 degrees. For example, the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 200' and the lower surface of the reinforcing layer 200' can have a value in the range of about 75 degrees to about 85 degrees.

[0165] As described above, according to the embodiment, the reinforcing layer 200' can be formed such that the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 200' and the lower surface of the reinforcing layer 200' is smaller than the angle between the inner surface of the opening defined by the pattern of the first silicon nitride layer 105a' and the lower surface of the first silicon nitride layer 105a'. Therefore, even though the thickness of the patterned area of ​​the mask MSb is increased by additionally forming the reinforcing layer 200' on the first silicon nitride layer 105a', fine patterns can be formed in a high-resolution display panel.

[0166] In the implementation and reference Figures 6A to 7B An embodiment is shown in which a reinforcing layer 200' is formed on the upper surface of the first silicon nitride layer 105a'. However, the invention is not limited thereto, and in another embodiment, the reinforcing layer may be formed on the lower surface of the first silicon nitride layer. This will be explained in the following reference. Figures 8A to 8L describe.

[0167] Figures 8A to 8LThis is a cross-sectional view illustrating a process for manufacturing a mask according to yet another embodiment.

[0168] In the implementation and reference Figure 8A and Figure 8B You can set the base layer to 100 for fabricating the mask (MS). See reference. Figure 8B A first silicon nitride layer 105a can be formed on the upper surface of the base layer 100, and a second silicon nitride layer 105b can be formed on the lower surface of the base layer 100. In the embodiments and with reference to... Figure 8C A photosensitive layer 110 can be formed on the first silicon nitride layer 105a. Subsequently, a photosensitive layer 110 can be formed on the first silicon nitride layer 105a. Figure 8C An etching process is performed on the first silicon nitride layer 105a. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 110 can be formed on the first silicon nitride layer 105a. In the embodiment and with reference to... Figure 8D This illustrates a first silicon nitride layer 105a' patterned by an etching process. In this embodiment, a dry etching process can be applied to form fine patterns. In this embodiment and in reference to... Figure 8E The photosensitive layer 110 on the patterned first silicon nitride layer 105a' can be removed. Therefore, the patterned first silicon nitride layer 105a' can be exposed. In the embodiment and with reference to... Figure 8F A protective layer 115 can be formed on a patterned first silicon nitride layer 105a'. In the embodiments and with reference to... Figure 8G A photosensitive layer 120 can be formed below the second silicon nitride layer 105b. Subsequently, a photosensitive layer 120 can be formed... Figure 8G An etching process is performed on the second silicon nitride layer 105b. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 120 can be formed on the second silicon nitride layer 105b. In the embodiment and with reference to... Figure 8H The image shows a second silicon nitride layer 105b' patterned by an etching process. Figures 8A to 8H The process shown can be combined with Figures 5A to 5H The processes shown are basically the same.

[0169] In the implementation and reference Figure 8I Unnecessary portions of the base layer 100 can be removed. That is, portions of the base layer 100 exposed by openings in the patterned second silicon nitride layer 105b' and the patterned photosensitive layer 120 can be etched and removed.

[0170] In the implementation and reference Figure 8JA reinforcing layer 210 can be formed on the lower surface of the protective layer 115 and the first silicon nitride layer 105a'. As described above, the reinforcing layer 210 may include photosensitive polyimide (PSPI). Simultaneously, the reinforcing layer 210 can also be formed on the lower surface of the photosensitive layer 120, the side surface of the second silicon nitride layer 105b', and the side surface of the base layer 100.

[0171] Subsequently, in an embodiment, the reinforcing layer 210 can be selectively etched using a photolithography process to form, as shown below. Figure 8K The patterned reinforcing layer 210' shown is illustrated. When the reinforcing layer 210 is composed of photosensitive polyimide, a process for curing the patterned reinforcing layer 210' can be selectively performed.

[0172] Subsequently, in the implementation methods and with reference to Figure 8L The photosensitive layer 120 beneath the patterned second silicon nitride layer 105b' can be removed. In this embodiment, a developer can be used to remove the photosensitive layer 120. Therefore, the patterned second silicon nitride layer 105b' can be exposed. Simultaneously, in this process, the protective layer 115 on the patterned first silicon nitride layer 105a' can be removed. Therefore, the patterned first silicon nitride layer 105a' and the reinforcing layer 210' can be exposed. The mask MSc manufactured as described above may include the reinforcing layer 210' formed on the lower surface of the first silicon nitride layer 105a'.

[0173] In the implementation method, Figure 8L In the mask MSc shown, within the opening defined by the base layer 100, the reinforcing layer 210' can be formed on the lower surface of the first silicon nitride layer 105a'.

[0174] Similar to the above references Figure 7A In the described embodiment, the size of the opening defined by the pattern of the reinforcing layer 210' formed below the first silicon nitride layer 105a' can be larger than the size of the opening defined by the pattern of the first silicon nitride layer 105a'. Therefore, even though the thickness of the patterned area of ​​the mask MSc is increased by additionally forming the reinforcing layer 210' below the first silicon nitride layer 105a', fine patterns can be formed in a high-resolution display panel.

[0175] In another embodiment, similar to the above reference. Figure 7B In the described embodiment, the angle between the inner surface of the opening defined by the pattern of the reinforcing layer 210' formed below the first silicon nitride layer 105a' and the upper surface of the reinforcing layer 210' can be smaller than the angle between the inner surface of the opening defined by the pattern of the first silicon nitride layer 105a' and the lower surface of the first silicon nitride layer 105a'.

[0176] Figures 9A to 9L This is a cross-sectional view illustrating a process for manufacturing a mask according to yet another embodiment.

[0177] In the implementation and reference Figure 9A and Figure 9B You can set the base layer to 100 for fabricating the mask (MS). See reference. Figure 9B A first silicon nitride layer 105a can be formed on the upper surface of the base layer 100, and a second silicon nitride layer 105b can be formed on the lower surface of the base layer 100. In the embodiments and with reference to... Figure 9C A photosensitive layer 110 can be formed on the first silicon nitride layer 105a. Subsequently, a photosensitive layer 110 can be formed on the first silicon nitride layer 105a. Figure 9C An etching process is performed on the first silicon nitride layer 105a. Through the etching process, a pattern corresponding to the pattern of the photosensitive layer 110 can be formed on the first silicon nitride layer 105a. In the embodiment and with reference to... Figure 9D This illustrates a first silicon nitride layer 105a' patterned by an etching process. In the embodiment and with reference to... Figure 9E The photosensitive layer 110 on the patterned first silicon nitride layer 105a' can be removed. Therefore, the patterned first silicon nitride layer 105a' can be exposed.

[0178] In the implementation and reference Figure 9F A reinforcing layer 200 can be formed on a patterned first silicon nitride layer 105a'. Subsequently, the reinforcing layer 200 can be selectively etched using a photolithography process to form a structure such as... Figure 9G The patterned reinforcing layer 200' shown is illustrated.

[0179] Subsequently, in the implementation methods and with reference to Figure 9H A protective layer 115 can be formed on the first silicon nitride layer 105a' and the reinforcing layer 200'. In the embodiments and with reference to... Figure 9I A photosensitive layer 120 can be formed below the second silicon nitride layer 105b. As described above, Figure 9I The photosensitive layer 120 can be formed with a pattern corresponding to the edge of the mask MS.

[0180] In the implementation and reference Figure 9J Unnecessary portions of the base layer 100 can be removed, and a reinforcing layer 210 can be formed on the lower surface of the protective layer 115 and the lower surface of the first silicon nitride layer 105a'. Simultaneously, the reinforcing layer 210 can also be formed on the lower surface of the photosensitive layer 120, the side surface of the second silicon nitride layer 105b', and the side surface of the base layer 100.

[0181] Subsequently, in an embodiment, the reinforcement layer 210 can be selectively etched using a photolithography process to form a structure such as... Figure 9K The patterned reinforcing layer 210' is shown. When the reinforcing layer 210 is composed of photosensitive polyimide, the process of curing the patterned reinforcing layer 210' can be selectively performed.

[0182] Subsequently, in the implementation methods and with reference to Figure 9L The photosensitive layer 120 beneath the patterned second silicon nitride layer 105b' can be removed. In this embodiment, a developer can be used to remove the photosensitive layer 120. Therefore, the patterned second silicon nitride layer 105b' can be exposed. Simultaneously, in this process, the protective layer 115 on the patterned first silicon nitride layer 105a' and the reinforcing layer 200' can be removed. Therefore, the patterned first silicon nitride layer 105a' and the reinforcing layers 200' and 210' can be exposed. The mask MSd manufactured as described above may include the reinforcing layers 200' and 210' formed on the upper and lower surfaces of the first silicon nitride layer 105a'.

[0183] According to the implementation method, the mask can be used in the manufacturing process of high-resolution display panels and can have enhanced strength.

[0184] Figure 10 This is a block diagram of an electronic device according to an embodiment. (Reference) Figure 10 The electronic device 10 may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0185] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0186] The memory 13 can store data and / or information used to operate the processor 12 or the display module 11. When the processor 12 executes an application stored in the memory 13, image data signals and / or input control signals can be transmitted to the display module 11. The display module 11 can process the provided signals and output image information on the display screen.

[0187] The power module 14 may include a power module such as a power adapter or battery device, and a power conversion module. The power conversion module converts the power supplied by the power module and generates power to operate the electronic device 10.

[0188] At least one of the aforementioned components of the electronic device 10 may be included in a display device manufactured using a mask according to the embodiments described above. Specifically, a display panel included in a display module may be manufactured using a mask according to the embodiments described above. Furthermore, in terms of functionality, some of the independent modules included in a single module may be included in the display device, while other modules may be disposed separately from the display device. For example, display module 11 may be included in the display device, while processor 12, memory 13, and power module 14 may not be included in the display device and are instead disposed separately in the electronic device 10.

[0189] Figure 11 Schematic diagrams illustrating various embodiments of the electronic device are shown.

[0190] refer to Figure 11 The various types of electronic devices to which the implementation of the display device is applied may include: electronic devices that display images, such as smartphones 10_1a, tablet PCs 10_1b, laptop computers 10_1c, televisions (TVs) 10_1d, and desktop monitors 10_1e; wearable electronic devices that include display modules, such as smart glasses 10_2a, head-mounted displays (HMDs) 10_2b, and smartwatches 10_2c; and automotive electronic devices 10_3 that include display modules, such as central information displays (CIDs) located on the dashboard, center consoles, vehicle dashboards, and rearview mirror displays.

[0191] Although embodiments of the invention have been described in detail with reference to the accompanying drawings, it should be noted that the embodiments described above are intended to illustrate the invention and not to limit its meaning or scope. Therefore, those skilled in the art will understand that various modifications and equivalent embodiments can be made within the scope and spirit of the invention. Exemplary embodiments have been disclosed herein, and although specific terminology has been used, these terms are used and interpreted in a general and descriptive sense only and are not intended to be limiting. In some cases, unless explicitly stated otherwise, as will be apparent to those skilled in the art, features, characteristics, and / or elements described in connection with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in connection with other embodiments. Therefore, those skilled in the art will understand that various changes in form and detail can be made without departing from the spirit and scope of the invention. Thus, although various embodiments have been described above, those skilled in the art will understand that various modifications, additions, and substitutions can be made without departing from the scope and spirit of the invention.

Claims

1. A mask comprising: a first silicon nitride layer having a first pattern for deposition of a display panel; and a first reinforcement layer formed on the first silicon nitride layer and having a second pattern corresponding to the first pattern, characterized in that a brittleness of the first reinforcement layer is lower than a brittleness of the first silicon nitride layer. further comprising:

2. The mask of claim 1, wherein, a base layer located below the first silicon nitride layer and having a third pattern. further comprising:

3. The mask of claim 2, wherein, a second reinforcement layer formed below the first silicon nitride layer and having a fourth pattern corresponding to the first pattern. the second reinforcement layer is formed within an opening of the base layer, wherein the opening of the base layer is defined by the third pattern.

4. The mask of claim 3, wherein, the base layer comprises silicon.

5. The mask of claim 2, wherein, further comprising:

6. The mask of claim 2, wherein, a second silicon nitride layer formed below the base layer. the first reinforcement layer comprises a photosensitive polyimide.

7. The mask of claim 1, wherein, the first reinforcement layer is formed by performing a curing process on a layer formed of the photosensitive polyimide, wherein the second pattern is formed in the layer.

8. The mask of claim 7, wherein, a size of an opening defined by the second pattern is greater than a size of an opening defined by the first pattern.

9. The mask of claim 1, wherein, an angle between an inner surface of the opening defined by the second pattern and a lower surface of the first reinforcement layer is smaller than an angle between an inner surface of the opening defined by the first pattern and a lower surface of the first silicon nitride layer.

10. The mask of claim 1, wherein, ​

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