AMR magnetoresistive unit, AMR magnetoresistive module, angle sensor and chip

Abstract

This invention discloses an AMR magnetoresistive unit, an AMR magnetoresistive module, an angle sensor, and a chip. The AMR magnetoresistive unit includes a first AMR magnetoresistive unit comprising multiple first AMR magnetoresistive strips. These strips are radially distributed around a center, and each strip is a 60-degree arc-shaped structure. This invention provides an AMR magnetoresistive unit, AMR magnetoresistive module, angle sensor, and chip that can better eliminate harmonics, especially the 6th harmonic, reduce domain collective hysteresis and noise, and improve anti-eccentricity.

Description

Technical Field

[0001] This invention relates to the field of AMR (anisotropic magnetoresistive) angle sensor technology, specifically to an AMR magnetoresistive unit, AMR magnetoresistive module, angle sensor, and chip that can better eliminate harmonics. Background Technology

[0002] An angle sensor / chip based on AMR (anisotropic magnetoresistive) is a high-precision sensor that uses the magnetoresistive effect to measure angles. Its core function is to detect the rotation angle of an object in a non-contact manner and convert the physical angle information into an electrical signal output.

[0003] By sensing changes in magnetic field direction using an AMR angle sensor, it can achieve precise measurement of absolute angles from 0 to 360°, with a resolution of up to 21 bits (approximately 0.00017°) and a measurement error as low as ±0.07°. It is suitable for scenarios with extremely high requirements for angle accuracy (such as servo motor control and industrial robot joints).

[0004] Angle sensors based on AMR (anisotropic magnetoresistive) magnetoresistive technology are typically used in applications such as automotive steering angle detection, transmission position feedback, servo motors, robot joints, surgical robotic arms, and aerospace attitude sensors. Based on the non-contact measurement principle of magnetic fields and magnetoresistive effects, AMR angle sensors avoid mechanical wear, extending equipment lifespan, while also exhibiting strong resistance to vibration and shock, making them adaptable to harsh environments.

[0005] Existing AMR angle sensors mostly employ straight-line or elongated stripe designs. While these solutions can achieve sin(2θ) and cos(2θ) type outputs, they suffer from the following problems:

[0006] 1. Harmonic distortion is prevalent in products on the market. During product development and testing, the applicant discovered that the 6th harmonic is particularly prominent in certain processes, requiring compensation through complex back-end algorithms. Even with back-end algorithm compensation, it is still difficult to maintain low distortion across the entire angular range. However, currently, there are very few technologies specifically designed to eliminate the 6th harmonic.

[0007] 2. Significant hysteresis and noise caused by collective domain flipping. When the applied magnetic field rotates past the critical angle, for traditional linear stripes, multiple stripe domains flip simultaneously, resulting in output hysteresis and low-frequency noise.

[0008] 3. Some striped designs have too low an area utilization rate. Summary of the Invention

[0009] The purpose of this invention is to provide an AMR magnetoresistive unit, AMR magnetoresistive module, angle sensor and chip that can better eliminate harmonics, especially the 6th harmonic, reduce magnetic domain collective hysteresis and noise, and improve anti-eccentricity.

[0010] To achieve the above objectives, in a first aspect, the technical solution provided by the present invention is as follows:

[0011] An AMR magnetoresistive unit is provided, comprising:

[0012] First AMR magnetoresistive unit;

[0013] The first AMR magnetoresistive unit includes a plurality of first AMR magnetoresistive strips, which are arranged radially around a center, and each first AMR magnetoresistive strip is an arc-shaped strip structure at a 60-degree angle.

[0014] Each of the first AMR magnetoresistive strips is connected in series.

[0015] In the plurality of first AMR magnetoresistive strips, the arc length of each first AMR magnetoresistive strip is greater than the arc length of its inner adjacent first AMR magnetoresistive strip, and the first AMR magnetoresistive unit as a whole has a fan-shaped structure.

[0016] In the plurality of first AMR magnetoresistive strips, the spacing between two adjacent first AMR magnetoresistive strips is equal.

[0017] The width of the first AMR magnetoresistive strip is 8 to 15 micrometers.

[0018] Secondly, the technical solution provided by this invention is as follows:

[0019] It includes a plurality of first AMR magnetoresistive units, which are distributed circumferentially around a center.

[0020] Thirdly, the technical solution provided by this invention is as follows:

[0021] An angle sensor is provided, comprising:

[0022] Substrate, and

[0023] A bridge formed on the substrate, the bridge comprising: a plurality of the first AMR magnetoresistive units.

[0024] In the same first AMR magnetoresistive unit, among its multiple first AMR magnetoresistive strips, the arc length of each first AMR magnetoresistive strip is greater than the arc length of its inner adjacent first AMR magnetoresistive strip, and the first AMR magnetoresistive unit as a whole has a fan-shaped structure.

[0025] In the bridge, a plurality of first AMR magnetoresistive units are evenly distributed circumferentially, and a fan-shaped gap is formed between two adjacent first AMR magnetoresistive units, thus forming a plurality of fan-shaped gaps evenly distributed circumferentially.

[0026] The bridge also includes multiple second AMR magnetoresistive units;

[0027] The second AMR magnetoresistive unit has the same structure as the first AMR magnetoresistive unit, and the number of the second AMR magnetoresistive units is equal to that of the first AMR magnetoresistive unit.

[0028] In the bridge, a plurality of first AMR magnetoresistive units and a plurality of second AMR magnetoresistive units share the same center, and each second AMR magnetoresistive unit is formed in one of the fan-shaped gaps, such that the first AMR magnetoresistive units and the second AMR magnetoresistive units are alternately distributed in the circumferential direction.

[0029] For any second AMR magnetoresistive unit, a plurality of second AMR magnetoresistive strips located relatively close to the center are arranged within the fan-shaped gap, while second AMR magnetoresistive strips located relatively far from the center are arranged outside the fan-shaped gap.

[0030] Fourthly, the technical solution provided by this invention is as follows:

[0031] An AMR magnetoresistive unit is provided, wherein the AMR magnetoresistive unit includes a first sub-AMR magnetoresistive unit and a second sub-AMR magnetoresistive unit;

[0032] The first sub-AMR magnetoresistive unit includes multiple first sub-AMR magnetoresistive strips, all of which are radially distributed around the first center and are all 60-degree arc-shaped strip structures.

[0033] The second sub-AMR magnetoresistive unit includes multiple second sub-AMR magnetoresistive strips, all of which are radially distributed around the second center and are all 60-degree arc-shaped strip structures.

[0034] In the first sub-AMR magnetoresistive unit and the second sub-AMR magnetoresistive unit, the number of first sub-AMR magnetoresistive strips is equal to the number of second sub-AMR magnetoresistive strips. The first sub-AMR magnetoresistive strip closest to the first center is connected to the second sub-AMR magnetoresistive strip furthest from the second center, and the first sub-AMR magnetoresistive strip next closest to the first center is connected to the second sub-AMR magnetoresistive strip next furthest from the second center. In this way, each first sub-AMR magnetoresistive strip is sequentially connected to one of the second sub-AMR magnetoresistive strips.

[0035] In the plurality of first sub-AMR magnetoresistive strips, the arc length of each first sub-AMR magnetoresistive strip is greater than the arc length of its inner adjacent first sub-AMR magnetoresistive strip, and the first sub-AMR magnetoresistive unit as a whole has a fan-shaped structure.

[0036] In the plurality of second sub-AMR magnetoresistive strips, the arc length of each second sub-AMR magnetoresistive strip is greater than the arc length of its inner adjacent second sub-AMR magnetoresistive strip, and the second sub-AMR magnetoresistive unit as a whole has a fan-shaped structure.

[0037] Fifthly, the technical solution provided by this invention is as follows:

[0038] An AMR magnetoresistive module is provided, comprising eight AMR magnetoresistive units, wherein the eight AMR magnetoresistive units are uniformly distributed along the circumference, and each AMR magnetoresistive unit is distributed in one of the 45-degree fan-shaped spaces in the circumference.

[0039] Of the eight AMR magnetoresistive units, each AMR magnetoresistive unit is arranged in a clockwise direction, rotated 45 degrees clockwise relative to the previous AMR magnetoresistive unit.

[0040] Sixthly, the technical solution provided by this invention is as follows:

[0041] An AMR magnetoresistive module is provided, including a first sub-AMR magnetoresistive module and a second sub-AMR magnetoresistive module;

[0042] The first sub-AMR magnetoresistive module and the second sub-AMR magnetoresistive module each include four of the aforementioned AMR magnetoresistive units;

[0043] The first sub-AMR magnetoresistive module and the second sub-AMR magnetoresistive module are generally distributed on both sides of an axis, and the first sub-AMR magnetoresistive module and the second sub-AMR magnetoresistive module are staggered by a certain distance along the direction of the axis, so that the AMR magnetoresistive module as a whole is a rectangular structure.

[0044] In the first sub-AMR magnetoresistive module, each AMR magnetoresistive unit is arranged in a clockwise direction, rotated 45 degrees clockwise relative to the previous AMR magnetoresistive unit;

[0045] In the second sub-AMR magnetoresistive module, each AMR magnetoresistive unit is arranged in a clockwise direction, rotated 45 degrees clockwise relative to the previous AMR magnetoresistive unit.

[0046] Seventhly, the technical solution provided by the present invention is as follows:

[0047] An AMR magnetoresistive module is provided, including a third sub-AMR magnetoresistive module and a fourth sub-AMR magnetoresistive module;

[0048] The third sub-AMR magnetoresistive module and the fourth sub-AMR magnetoresistive module each include four of the aforementioned AMR magnetoresistive units;

[0049] In the third sub-AMR magnetoresistive module, four AMR magnetoresistive units are evenly distributed around a center along the circumference, and a gap is formed between each two adjacent AMR magnetoresistive units, thus forming four gaps evenly distributed along the circumference.

[0050] In the fourth sub-AMR magnetoresistive module, each of the AMR magnetoresistive units is arranged within one of the gaps.

[0051] In the third sub-AMR magnetoresistive module, each AMR magnetoresistive unit is arranged in a clockwise direction, rotated 90 degrees clockwise relative to the previous AMR magnetoresistive unit.

[0052] In the fourth sub-AMR magnetoresistive module, each AMR magnetoresistive unit is arranged in a clockwise direction, rotated 90 degrees clockwise relative to the previous AMR magnetoresistive unit.

[0053] Eighthly, the technical solution provided by the present invention is: to provide an AMR magnetoresistive module, including a fifth sub-AMR magnetoresistive module and a sixth sub-AMR magnetoresistive module;

[0054] The fifth sub-AMR magnetoresistive module and the sixth sub-AMR magnetoresistive module have the same structure and are arranged in a similar relationship.

[0055] The fifth or sixth sub-AMR magnetoresistive module includes four AMR magnetoresistive units, all of which are evenly distributed around a center in the circumferential direction. Adjacent AMR magnetoresistive units are closely close to each other, and each AMR magnetoresistive unit is arranged in a clockwise direction, with each unit rotated 90 degrees clockwise relative to the previous unit.

[0056] The sixth sub-AMR magnetoresistive module is arranged in a clockwise direction, rotated 90 degrees relative to the fifth sub-AMR magnetoresistive module.

[0057] Ninthly, the technical solution provided by the present invention is as follows:

[0058] An angle sensor is provided, comprising:

[0059] Substrate, and

[0060] A bridge formed on the substrate, the bridge comprising:

[0061] At least one of the aforementioned AMR magnetoresistive units; or:

[0062] Including the aforementioned AMR magnetoresistive module; or:

[0063] This includes the aforementioned AMR magnetoresistive module.

[0064] In a tenth aspect, the technical solution provided by the present invention is as follows:

[0065] A chip is provided, comprising:

[0066] At least one of the aforementioned AMR magnetoresistive units; or:

[0067] Includes at least one of the aforementioned AMR magnetoresistive units; or:

[0068] Including the aforementioned AMR magnetoresistive module; or:

[0069] This includes the aforementioned AMR magnetoresistive module.

[0070] Compared with the prior art, the present invention has the following beneficial effects:

[0071] 1. Excellent harmonic suppression: The unique 60-degree arc-shaped magnetic reluctance strip radial distribution layout can fundamentally and effectively eliminate the 6th harmonic in the output signal, and also weaken other harmonics, thereby improving the linearity and accuracy of the sensor.

[0072] 2. Significantly reduces noise: The magnetoresistive strips distributed at different radii have different magnetic anisotropy fields, which leads to a dispersion of their magnetization reversal angles, thereby better avoiding concentrated domain reversal.

[0073] 3. High robustness: Its radial concentric circle structure naturally matches the magnetic field distribution, making it insensitive to errors such as eccentricity and tilting during assembly, thus enhancing the product's anti-interference ability and overall stability.

[0074] The invention will become clearer from the following description, taken in conjunction with the accompanying drawings, which are used to explain embodiments of the invention. Attached Figure Description

[0075] Figure 1 The diagram shown is a schematic diagram of the first embodiment of the AMR magnetoresistive unit of the present invention.

[0076] Figure 2 The diagram shown is a schematic diagram of the first embodiment of the AMR magnetoresistive module of the present invention.

[0077] Figure 3 The diagram shown is a schematic diagram of the first embodiment of the AMR magnetoresistive unit of the bridge of the present invention.

[0078] Figure 4 The diagram shown is a schematic diagram of a second embodiment of the AMR magnetoresistive unit of the bridge of the present invention.

[0079] Figure 5The diagram shown is a schematic diagram of a second embodiment of the AMR magnetoresistive unit of the present invention.

[0080] Figure 6 The diagram shows two embodiments of the AMR magnetoresistive module of the present invention.

[0081] Figure 7 The diagram shows three embodiments of the AMR magnetoresistive module of the present invention.

[0082] Figure 8 The diagram shows four embodiments of the AMR magnetoresistive module of the present invention.

[0083] Figure 9 The diagram shows five embodiments of the AMR magnetoresistive module of the present invention. Detailed Implementation

[0084] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0085] The components of the embodiments of the invention described and illustrated herein can typically be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0086] In the following, the terms “comprising,” “having,” and their cognates used in the various embodiments of the invention are intended only to indicate a particular feature, number, step, operation, element, component, or combination thereof, and should not be construed as excluding, firstly, the presence of one or more other features, numbers, steps, operations, elements, components, or combinations thereof, or adding the possibility of one or more features, numbers, steps, operations, elements, components, or combinations thereof.

[0087] Furthermore, if the terminology “first,” “second,” “third,” etc., is used in this invention, it is only for distinguishing descriptions and should not be construed as indicating or implying relative importance.

[0088] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of the invention pertain. Terms (such as those defined in commonly used dictionaries) shall be interpreted as having the same meaning as in their contextual meaning in the relevant technical field and shall not be interpreted as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of the invention.

[0089] To better illustrate the advantages of this invention, we first need to understand the meaning of three physical concepts related to the magnetic field:

[0090] External magnetic field H e This is a magnetic field applied from the outside. For an angle sensor, this is the magnetic field that needs to be measured. Its direction and magnitude are the input signals of the angle sensor.

[0091] Internal anisotropic field H k It is related to the shape of the magnetoresistive material and is also called the shape anisotropy field H. k It is not a real magnetic field, but an equivalent concept that represents the inherent "force" of AMR materials that tends to direct their magnetization in a specific direction. k The magnitude quantifies the difficulty required to shift the magnetization M from the easy magnetization axis to the difficult magnetization axis (perpendicular to the easy axis). k The larger the value, the more "persistent" the material is, and the more difficult it is to change its magnetization direction. The H value of each AMR magnetoresistive strip... k The size of the AMR magnetoresistive strip is related to its aspect ratio L / W. Specifically, in the embodiments of this invention, since each AMR magnetoresistive strip is an arc-shaped structure, but the length of the arc is inconsistent, the aspect ratio of the AMR magnetoresistive strip will be explained below in conjunction with specific embodiments.

[0092] A magnetic domain can be imagined as a collection of countless tiny "compasses" or "magnets". These tiny magnets spontaneously align themselves into small regions that are aligned in the same direction, and these regions are called magnetic domains.

[0093] refer to Figure 1 The present invention discloses an AMR magnetoresistive unit, including: a first AMR magnetoresistive unit 100; the first AMR magnetoresistive unit 100 includes a plurality of first AMR magnetoresistive strips 101, the plurality of first AMR magnetoresistive strips 101 are radially distributed around a center, and each first AMR magnetoresistive strip 101 is an arc-shaped strip structure of 60 degrees.

[0094] It should be noted that, Figure 1The first AMR magnetoresistive unit 100 has multiple first AMR magnetoresistive strips 101. One of them is selected and marked with a dashed box for better illustration and explanation. Similar situations will not be further explained below.

[0095] Figure 1 The first AMR magnetoresistive strips 101 shown are connected in series. Specifically, each first AMR magnetoresistive strip 101 may have metal connection structures at both ends for electrical connection.

[0096] refer to Figure 1 The first AMR magnetoresistive unit 100 is an AMR magnetoresistive unit used to construct a bridge, such as a Wheatstone bridge. In an AMR angle sensor, the bridge (usually a Wheatstone bridge) plays a core role in signal conversion; simply put, it converts the magnetoresistive value according to the external magnetic field H. e The change is converted into a measurable, high-precision voltage signal.

[0097] The first AMR magnetoresistive unit 100 in this embodiment is part of the AMR angle sensor chip layout. An AMR angle sensor typically consists of multiple AMR magnetoresistive units 100 as shown in this embodiment.

[0098] In this embodiment, multiple first AMR magnetoresistive strips 101 are radially distributed around a center. That is, each of the first AMR magnetoresistive strips 101 in this embodiment is a 60-degree arc-shaped strip structure. Specifically, the center is the common center of each of the first AMR magnetoresistive strips 101, and is usually also the center of the AMR angle sensor chip layout.

[0099] Since each of the first AMR magnetoresistive strips 101 is a 60-degree arc-shaped structure, the 60-degree arc design naturally eliminates the 6th harmonic component. It is well known that the electrical value experienced by current in a magnetoresistive material varies with angle θ: R(θ) = R0 – ΔR·cos²θ, where θ is the angle between the current direction and the magnetization direction within the material. The cos²θ in the above formula can be converted to cos(2θ), so the signal component used for angle measurement is cos(2θ); while the 6th harmonic component, caused by errors such as collective domain reversal, manufacturing processes, and assembly, is mathematically represented as cos(6θ). Therefore, by designing a 60-degree arc-shaped magnetoresistive strip structure, the angle θ between the current flowing through the magnetoresistive strip and the magnetization direction within the AMR material changes slowly. Ultimately, the angle θ changes by 60 degrees in physical space, which is 360 degrees for 6θ. Therefore, after integration over the same segment of the magnetoresistive strip, the 6th harmonic is zero.

[0100] Therefore, when the first AMR magnetoresistive strip is designed as an arc-shaped structure, the angle of the arc-shaped structure is directly related to the harmonic output. For example, if you want to reduce the output of the 6th harmonic component, you can design the arc length of the first AMR magnetoresistive strip to be 60 degrees. Specifically, this is calculated using the formula: 360 / n. In this embodiment, the goal is to reduce the 6th harmonic, so the value of n is 6. Or, if you want to reduce the output of the 8th harmonic component, then the value of n is 8, and you can design the arc length of the first AMR magnetoresistive strip to be 45 degrees.

[0101] Furthermore, the first AMR magnetoresistive unit 100 comprises individual first AMR magnetoresistive strips 101 connected in series via metal connections at their ends. When connected in series, since the aspect ratios L / W of the individual first AMR magnetoresistive strips 101 are different, the sixth harmonics output by the arc-shaped magnetoresistive strips with different aspect ratios L / W have different phases. When these are added together, they can be further attenuated. Therefore, this structure can further suppress residual sixth harmonics caused by factors such as manufacturing errors and temperature.

[0102] For other harmonics, designing the arc length of the first AMR magnetoresistive strip to 60 degrees, while not completely eliminating harmonics other than the 6th order, such as the 4th harmonic, does weaken the intensity of the 4th harmonic after integration over the 60-degree arc-shaped magnetoresistive strip. Furthermore, the aspect ratio L / W, described later in this application, affects the collective flipping of magnetic domains; the 4th harmonics output by arc-shaped magnetoresistive strips with different aspect ratios L / W have different phases. When these phases are added together, the 4th harmonic is also substantially weakened. The same applies to other harmonics.

[0103] In one embodiment, reference continues to be made to Figure 1 In the plurality of first AMR magnetoresistive strips 101, the arc length of each first AMR magnetoresistive strip 101 is greater than the arc length of its inner adjacent first AMR magnetoresistive strip 101, and the first AMR magnetoresistive unit 100 as a whole has a fan-shaped structure.

[0104] In this embodiment, the length of each first AMR magnetoresistive strip 101 is inconsistent, resulting in inconsistent aspect ratios L / W for each first magnetoresistive strip 101. Consequently, within the same first AMR magnetoresistive unit 100, the equivalent H of each first AMR magnetoresistive strip 101 varies. k The differences in these features disperse the domain flip points, preventing large-scale concentrated domain flips and significantly reducing the generation of collective domain hysteresis / flips and certain harmonics when the external field changes in the AMR magnetoresistive unit.

[0105] The explanation for domain reversal is that when the external magnetic field H... e When the direction changes (e.g., in an alternating magnetic field), the magnetization direction of these domains changes accordingly. This process of changing direction is called domain flipping, due to the external field H. eIt changes constantly, therefore domain flipping occurs with the external magnetic field H. e It is carried out in response to changes.

[0106] Regarding the explanation of domain reversal points, for example, in AMR magnetoresistive materials with straight or near-straight stripe shapes, the reversal points of most domains may be very close. This means that when the external magnetic field reaches a certain value, almost all domains will instantly undergo a "mass-scale concentrated reversal." When this "mass-scale concentrated reversal" occurs, a huge amount of energy needs to be provided instantaneously to drive all domains to reverse simultaneously. This makes the magnetization process of the AMR magnetoresistive strip very "laborious," resulting in a very "fat" hysteresis loop, i.e., high coercivity, high remanence, and large hysteresis loss. In the technical solution provided in this invention application, firstly, the shape of the AMR magnetoresistive strip is arc-shaped, rather than straight or straight AMR magnetoresistive strips. The arc-shaped structure better avoids the "collective reversal" of domains, dispersing the domain reversal points. Furthermore, since the arc length of each first AMR magnetoresistive strip 101 is greater than the arc length of its inner adjacent first AMR magnetoresistive strip 101, the aspect ratio L / W of each AMR magnetoresistive strip is inconsistent, and each has its own H. k It is understandable that, for example, if the shaft being measured is rotating, the external magnetic field H... e The change in magnetic domains is objectively a smooth sine wave, but the material's response suddenly "jumps" at a certain threshold. This jump severely distorts the output waveform, generating abundant harmonics. However, because the technical solution of this invention can disperse the domain flipping points, the magnetization process becomes continuous and smooth, more closely resembling the actual H... e The changing linear response greatly suppresses harmonic generation. As the flip points are dispersed, the magnetization process of the AMR magnetoresistive strip becomes smooth and gradual, eliminating the need to overcome a large "collective resistance" at any single point. This is analogous to pushing a heavy object: a sudden, forceful push is very strenuous (concentrated flip), while pushing slowly and gradually is much less strenuous (dispersed flip). The result is a "thinner" hysteresis loop, significantly reducing energy loss (represented by the hysteresis loop area). Here, L represents the length of the first AMR magnetoresistive strip, and W represents the width of the first AMR magnetoresistive strip.

[0107] like Figure 1 As shown, multiple first AMR magnetoresistive strips 101 arranged together can form a complete 60-degree "fan" shape. This facilitates arranging multiple first AMR magnetoresistive units 100 into a more complete geometric pattern (as shown in subsequent embodiments), which helps save area in the AMR angle sensor chip.

[0108] In one embodiment, reference Figure 1In the plurality of first AMR magnetoresistive strips 101, the spacing between two adjacent first AMR magnetoresistive strips is equal. The advantage of this arrangement is that it reduces uneven stress on the AMR material and the corresponding adverse effects.

[0109] In one embodiment, reference Figure 1 The width of the first AMR magnetoresistive strip is 8 to 15 micrometers. Depending on the manufacturing process used, the first AMR magnetoresistive strip can also have other widths.

[0110] In one embodiment, the present invention discloses an angle sensor, comprising: a substrate, and a bridge circuit formed on the substrate, the bridge circuit comprising: a plurality of... Figure 1 The first AMR magnetoresistive unit 100.

[0111] In this embodiment, we continue to refer to Figure 1 In the same first AMR magnetoresistive unit 100, among its four first AMR magnetoresistive strips 101, the arc length of each first AMR magnetoresistive strip 101 is greater than the arc length of its inner adjacent first AMR magnetoresistive strip, and the first AMR magnetoresistive unit 100 as a whole has a fan-shaped structure. Each first AMR magnetoresistive strip 101 is designed to be arranged in a concentric circular arc. The specific beneficial effects can be referred to the foregoing description, and will not be repeated here.

[0112] refer to Figure 2 This invention discloses an AMR magnetoresistive module 200, comprising: four such... Figure 1 The first AMR magnetoresistive unit 100 shown is composed of four units distributed circumferentially around a center.

[0113] Since any change in the magnetic field gradient caused by eccentricity will form a symmetrical distribution pattern on the circumference, the systematic errors caused by eccentricity in the four first AMR magnetoresistive units 100, which are circumferentially distributed around the center and evenly distributed along the axial direction, can be significantly averaged and canceled out in subsequent signal processing, thereby suppressing the influence of eccentricity on the angle output value. For example, the output signals of two first AMR magnetoresistive units 100 placed 180 degrees apart can be added together as the first signal output, and the output signals of the other two first AMR magnetoresistive units 100 placed 180 degrees apart can be added together as the second signal output. In this way, the signal errors caused by eccentricity in the first and second signals cancel each other out.

[0114] Multiple first AMR magnetoresistive units 100 are arranged closely in the circumferential direction. This layout maximizes the use of the chip layout area. Efficient layout utilization means that more dies can be fabricated on the same wafer.

[0115] refer to Figure 3In the bridge circuit, four first AMR magnetoresistive units 100 are evenly distributed circumferentially, and a fan-shaped gap 100a is formed between two adjacent first AMR magnetoresistive units 100, thus forming a plurality of fan-shaped gaps 100a evenly distributed circumferentially. These first AMR magnetoresistive units 100 are circumferentially distributed around the center, and their specific beneficial effects can be referred to the foregoing description, which will not be repeated here.

[0116] The bridge also includes four second AMR magnetoresistive units 102; the second AMR magnetoresistive units 102 have the same structure as the first AMR magnetoresistive unit 100. The number of second AMR magnetoresistive units 102 is equal to the number of first AMR magnetoresistive units 100. Thus, the first AMR magnetoresistive units 100 and the second AMR magnetoresistive units 102, evenly distributed circumferentially, with four of each, constitute the most common bridge structure. Those skilled in the art will understand that, depending on specific needs, the number of first AMR magnetoresistive units 100 and second AMR magnetoresistive units 102 can also be other, and the present invention is not limited thereto.

[0117] It should be noted that, as Figure 3 In the illustrated embodiment, the four first AMR magnetoresistive units 100 and four second AMR magnetoresistive units 102 of the bridge are arranged in a rectangular shape, resulting in a rectangular chip layout for the bridge. Two additional groups of four AMR magnetoresistive units each, arranged in a similar pattern, can be superimposed to make the chip layout of the bridge square.

[0118] Figure 4 In the illustrated embodiment, four first AMR magnetoresistive units 100 and four second AMR magnetoresistive units 102 share a common center, and each second AMR magnetoresistive unit 102 is formed within one of the fan-shaped gaps 101, such that the first AMR magnetoresistive units 100 and second AMR magnetoresistive units 102 are alternately distributed circumferentially. The four first AMR magnetoresistive units 100 can be uniformly distributed circumferentially with each other, and the four second AMR magnetoresistive units 102 can also be uniformly distributed circumferentially with each other. Those skilled in the art will understand that uniform distribution has the advantage of reducing uneven stress on the AMR material, but this patent application is not limited thereto.

[0119] right Figure 4 The “center” in the illustrated embodiment is the center of the circle for the four first AMR magnetoresistive units 100; however, for the four second AMR magnetoresistive units 102, each second AMR magnetoresistive unit 102 is “pulled” outwards by a certain distance relative to the center. Therefore, this “center” is the center of symmetry between every two opposite second AMR magnetoresistive units 102, rather than the center of the circle.

[0120] The following explanation Figure 3 Hehe Figure 4 Differences between the illustrated embodiments:

[0121] Figure 3 In the illustrated embodiment, each of the four first AMR magnetoresistive units 100 and the four second AMR magnetoresistive units 102 has a center and is centrally symmetrically distributed around its respective center; the four first AMR magnetoresistive units 100 and the four second AMR magnetoresistive units 102 are arranged side by side. Figure 4 In the embodiment shown, the four first AMR magnetoresistive units 100 have the same center and are distributed in a centrally symmetrical manner around the center; the centers of the four second AMR magnetoresistive units 102 do not coincide, but are still distributed in a centrally symmetrical manner around the center; the first AMR magnetoresistive units 100 and the second AMR magnetoresistive units 102 are distributed alternately in the circumferential direction.

[0122] also, Figure 3 In the embodiment shown, two adjacent first AMR magnetoresistive units 100 can be relatively close together, and their fan-shaped gap 101 will be relatively small; Figure 4 In the embodiment shown, the spacing between two adjacent first AMR magnetoresistive units 100 needs to be relatively larger, and their fan-shaped gap 100b will be designed to be relatively... Figure 3 The embodiment shown is larger because it is necessary to "insert" the second AMR magnetoresistive unit 102 as much as possible.

[0123] like Figure 4 In the illustrated embodiment, for any second AMR magnetoresistive unit 102, a portion is located within the sector-shaped gap 100b, and a portion is located outside the sector-shaped gap 100b. That is, for the same second AMR magnetoresistive unit 102, a plurality of second AMR magnetoresistive strips 104 located relatively close to the center of symmetry are arranged within the sector-shaped gap 100b, and a plurality of second AMR magnetoresistive strips 104 located relatively far from the center of symmetry are arranged outside the sector-shaped gap 100b.

[0124] like Figure 4 In the illustrated embodiment, the advantage of this design is that it eliminates the need to allocate additional chip area for the second AMR magnetoresistive unit 102. Instead, some components are "inserted" into the existing sector gap 100b, thereby reducing the total area required for the overall layout. This allows for efficient use of the sector gap space, reducing the overall layout area, which directly impacts manufacturing costs and integration density. The blank circular area between the first magnetoresistive unit 100 and the second AMR magnetoresistive unit 102 can be used to arrange other circuit structures. Furthermore, this design reduces the spacing between units, thus shortening the interconnect length. This not only saves space but also reduces signal crosstalk and power consumption.

[0125] refer to Figure 5 This invention provides an AMR magnetoresistive unit 300, which includes a first sub-AMR magnetoresistive unit 300a and a second sub-AMR magnetoresistive unit 300b. The first sub-AMR magnetoresistive unit 300a includes a plurality of first sub-AMR magnetoresistive strips 301, which are radially distributed around a first center and are all arc-shaped strips with a 60-degree angle. The second sub-AMR magnetoresistive unit 300b includes a plurality of second sub-AMR magnetoresistive strips 302, which are radially distributed around a second center and are all arc-shaped strips with a 60-degree angle. The structure is an arc-shaped strip; in the first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b, the number of first sub-AMR magnetoresistive strips 301 is equal to the number of second sub-AMR magnetoresistive strips 302. The first sub-AMR magnetoresistive strip 301 closest to the first center is connected to the second sub-AMR magnetoresistive strip 302 furthest from the second center, and the second first sub-AMR magnetoresistive strip 301 closest to the first center is connected to the second sub-AMR magnetoresistive strip 302 furthest from the second center. In this way, each first sub-AMR magnetoresistive strip 301 is connected to one of the second sub-AMR magnetoresistive strips 302 in sequence.

[0126] like Figure 5 In the illustrated embodiment, the first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b have the same structure. As shown in the figure, the portion above the dashed line 303 is the first sub-AMR magnetoresistive unit 300a, and the portion below the dashed line 303 is the second sub-AMR magnetoresistive unit 300b. For a detailed explanation of the design features of the first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b in this embodiment, please refer to the following... Figure 1 The relevant descriptions of the first AMR magnetoresistive unit 100 shown will not be repeated here.

[0127] refer to Figure 5 In the plurality of first sub-AMR magnetoresistive strips 301, the arc length of each first sub-AMR magnetoresistive strip 301 is greater than the arc length of its inner adjacent first sub-AMR magnetoresistive strip 301, and the first sub-AMR magnetoresistive unit 300a is generally fan-shaped; in the plurality of second sub-AMR magnetoresistive strips 302, the arc length of each second sub-AMR magnetoresistive strip 302 is greater than the arc length of its inner adjacent second sub-AMR magnetoresistive strip 302, and the second sub-AMR magnetoresistive unit 300b is generally fan-shaped.

[0128] Figure 5In this structure, multiple first sub-AMR magnetoresistive strips 301 and multiple second sub-AMR magnetoresistive strips 302 are connected to form a complete AMR magnetoresistive strip. Specifically, with the area closer to the center of each strip as "inner" and the area farther from the center as "outer," the multiple first sub-AMR magnetoresistive strips 301 and multiple second sub-AMR magnetoresistive strips 302 are connected in a cross-connection manner, with the innermost ring connecting to the outermost ring, the next innermost ring connecting to the next outermost ring, and so on. Since the first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b have the same structure, the interconnection of the corresponding magnetoresistive strips of the multiple first sub-AMR magnetoresistive strips 301 and multiple second sub-AMR magnetoresistive strips 302 results in multiple magnetoresistive strips of equal length, arranged side by side, such as... Figure 5 As shown.

[0129] like Figure 5 In the illustrated embodiment, since both the first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b employ multiple 60-degree arc-shaped strip structures radially distributed around their respective centers, and the magnetoresistive strip closest to the center in the first sub-unit is connected to the magnetoresistive strip furthest from the center in the second sub-unit, and so on, this connection method forms a complementary output in the bridge configuration. When the external magnetic field H... e During operation, harmonic components (such as the second harmonic) in the output signals of the two sub-units cancel each other out due to their opposite phase, thereby reducing the distortion of the overall output signal. By cross-connecting the inner and outer AMR magnetoresistive strips, this design compensates for local errors caused by magnetic field gradients or component nonlinearity, making the output of the entire AMR magnetoresistive unit closer to an ideal sine wave. This reduces the amplitude of higher harmonics (such as the third harmonic), improving the accuracy and stability of angle or position measurements.

[0130] This design divides each sub-unit into multiple independent 60-degree arc-shaped AMR magnetoresistive strips, essentially physically dividing a large magnetic domain region into multiple smaller regions. Due to differences in size and shape, each AMR magnetoresistive strip exhibits subtle variations in magnetic anisotropy and flipping critical field. Therefore, during magnetic field changes, these AMR magnetoresistive strips complete their magnetization flip sequentially and gradually, rather than simultaneously. This "time-division" flipping decomposes a large step into multiple smaller steps, thus smoothing the overall resistance-magnetic field change curve. The first sub-AMR magnetoresistive unit 300a and the second sub-AMR magnetoresistive unit 300b are connected using an "innermost ring to outermost ring" and "second innermost ring to second outermost ring" connection method. This design prevents the "collective flipping" mentioned above, ensuring the smoothness and stability of the overall output signal.

[0131] Furthermore, if each connected first sub-AMR magnetoresistive strip 301 and multiple second sub-AMR magnetoresistive strips 302 are considered as a complete AMR magnetoresistive strip 304, some or all of the magnetoresistive strips contained in the AMR magnetoresistive unit 300 can be connected in series, and the resulting signal also suppresses the 6th harmonic. Generally speaking, it is easier to manufacture by connecting all the magnetoresistive strips contained in an AMR magnetoresistive unit 300 in series. For better distinction, in Figure 5 In the embodiment shown, a complete AMR magnetoresistive strip 304 (the part framed by dashed lines) is formed by connecting a first sub-AMR magnetoresistive strip 301 to a second sub-AMR magnetoresistive strip 302.

[0132] Figure 6 In the illustrated embodiment, an AMR magnetoresistive module 400 is provided, including eight such... Figure 5 The AMR magnetoresistive unit 300 is shown, and the eight AMR magnetoresistive units 300 are evenly distributed along the circumference. Each AMR magnetoresistive unit 300 is distributed in one of the 45-degree fan-shaped spaces along the circumference, as shown in the figure. Figure 6 The diagram shows eight 45-degree sector spaces separated by four dashed lines.

[0133] In the eight AMR magnetoresistive units 300, each AMR magnetoresistive unit 300 is arranged in a clockwise direction, rotated 45 degrees clockwise relative to the previous AMR magnetoresistive unit 300.

[0134] The eight AMR magnetoresistive units are spaced 45 degrees apart, thus covering eight circumferential directions. This arrangement allows the Wheatstone bridge within each submodule to respond to an external magnetic field H. e The change in direction produces a highly sensitive response, and it can further avoid concentrated flipping of magnetic domains, ensuring the smoothness and stability of the overall output signal.

[0135] refer to Figure 7 This invention provides an AMR magnetoresistive module 500, including a first sub-AMR magnetoresistive module 500a and a second sub-AMR magnetoresistive module 500b; each of the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b includes four such... Figure 5 The AMR magnetoresistive unit 300 shown; the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are respectively distributed on both sides of an axis, and the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are staggered by a certain distance from each other along the direction of the axis, so that the AMR magnetoresistive module 500 is a rectangular structure.

[0136] It should be noted that the phrase "the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are respectively distributed on both sides of an axis" in the above text means that the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are generally distributed on both sides of an axis. In actual design, it is allowed that parts of the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b extend beyond the axis, so that the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are closer to each other, so as to better save layout area.

[0137] Figure 7 In the illustrated embodiment, the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b are spatially distributed on both sides of an axis (not shown in the figure, but a "virtual axis"). More importantly, these two sub-modules are not strictly aligned, but are offset from each other by a certain distance along the extension direction of this axis, which facilitates their placement on the relevant chip layout. Those skilled in the art can arrange the first sub-AMR magnetoresistive module 500a and the second sub-AMR magnetoresistive module 500b with reasonable spacing according to the layout design requirements.

[0138] This staggered design avoids unnecessary large gaps in the middle area, allowing the two sub-modules 500a and 500b to be integrated into a compact, near-rectangular overall area. Therefore, the AMR magnetoresistive module 500 can utilize the chip layout area more effectively, and its overall structure is rectangular.

[0139] also, Figure 7 The embodiment shown provides an AMR magnetoresistive module 500, with two sub-modules 500a and 500b each including four such... Figure 5 The AMR magnetoresistive unit 300 shown here has its operating characteristics described in the previous text and will not be repeated here.

[0140] Continue to refer to Figure 7 In one embodiment, in the first sub-AMR magnetoresistive module 500a, each AMR magnetoresistive unit 300 is arranged with a 45-degree clockwise rotation relative to the previous AMR magnetoresistive unit 300 in a clockwise direction; in the second sub-AMR magnetoresistive module 500b, each AMR magnetoresistive unit is arranged with a 45-degree clockwise rotation relative to the previous AMR magnetoresistive unit in a clockwise direction.

[0141] Referring to the foregoing description, these eight AMR magnetoresistive units are arranged in a sub-module of four, with each AMR magnetoresistive unit in each sub-module separated by 45 degrees. Figure 6The illustrated embodiment similarly covers all eight circumferential directions. The advantages of this design can be found in the foregoing section on... Figure 6 Description of the illustrated embodiments.

[0142] refer to Figure 8 This invention provides an AMR magnetoresistive module 600, including a third sub-AMR magnetoresistive module 600a and a fourth sub-AMR magnetoresistive module 600b; each of the third sub-AMR magnetoresistive module 600a and the fourth sub-AMR magnetoresistive module 600b includes four such modules. Figure 5 The AMR magnetoresistive unit 300 is shown; in the third sub-AMR magnetoresistive module 600a, four AMR magnetoresistive units 300 are evenly distributed around a center along the circumference, and a gap 601 is formed between each two adjacent AMR magnetoresistive units 300, thus forming four gaps 601 evenly distributed along the circumference; in the fourth sub-AMR magnetoresistive module 600b, each AMR magnetoresistive unit 300 is arranged in one of the gaps 601.

[0143] In one embodiment, in the third sub-AMR magnetoresistive module 600a, each AMR magnetoresistive unit 300 is arranged with a 90-degree clockwise rotation relative to the previous AMR magnetoresistive unit 300; in the fourth sub-AMR magnetoresistive module 600b, each AMR magnetoresistive unit 300 is arranged with a 90-degree clockwise rotation relative to the previous AMR magnetoresistive unit 300.

[0144] like Figure 8 As shown, in one embodiment, in the third sub-AMR magnetoresistive module 600a, one corner of each of the four AMR magnetoresistive units 300 is arranged as close as possible to the center of symmetry. Furthermore, each AMR magnetoresistive unit 300 can be rotated 90 degrees clockwise relative to the preceding AMR magnetoresistive unit 300, so that the four AMR magnetoresistive units 300 are arranged in a roughly "cross" shape. In the fourth sub-AMR magnetoresistive module 600b, each AMR magnetoresistive unit 300 is arranged within one of the gaps 601.

[0145] This design, with each of the four AMR magnetoresistive units 300 in the two sub-modules arranged 90 degrees clockwise relative to the preceding AMR magnetoresistive unit 300, avoids collective domain flipping and effectively detects magnetic field components in different directions, improving the accuracy of angle measurement. The overall module structure is more compact. By embedding each AMR magnetoresistive unit 300 of the fourth sub-module into the gap between two adjacent AMR magnetoresistive units 300 in the third sub-module, efficient space utilization is achieved. This allows for efficient use of the fan-shaped gap space, reducing the overall layout area, which directly affects manufacturing cost and integration density. Furthermore, the operating characteristics and specifications of this AMR magnetoresistive unit 300 are explained above and will not be repeated here.

[0146] refer to Figure 9 This invention provides an AMR magnetoresistive module 700, including a fifth sub-AMR magnetoresistive module 700a and a sixth sub-AMR magnetoresistive module 700b; the fifth sub-AMR magnetoresistive module 700a and the sixth sub-AMR magnetoresistive module 700b have the same structure and are arranged in an identical manner, as shown below. Figure 9 As shown, the two sub-modules are side by side on an axis (a virtual axis, not shown in the figure).

[0147] In one embodiment, the fifth sub-AMR magnetoresistive module 700a or the sixth sub-AMR magnetoresistive module 700b includes four AMR magnetoresistive units 300, all of which are evenly distributed circumferentially around a center. Adjacent AMR magnetoresistive units 300 are close together, and each AMR magnetoresistive unit 300 is rotated 90 degrees clockwise relative to the preceding AMR magnetoresistive unit 300. Thus, the centers of the fifth sub-AMR magnetoresistive module 700a and the sixth sub-AMR magnetoresistive module 700b each form approximately circular or square blank areas, within which other circuit structures can be arranged to save space.

[0148] In one embodiment, reference Figure 9 The sixth sub-AMR magnetoresistive module 700b is arranged 90 degrees relative to the fifth sub-AMR magnetoresistive module 700a in a clockwise direction. This avoids collective flipping of magnetic domains and can effectively detect magnetic field components in different directions, improving the accuracy of angle measurement.

[0149] In this embodiment, two structurally identical sub-modules are used, thus improving module consistency. The fifth sub-AMR magnetoresistive module 700a and the sixth sub-AMR magnetoresistive module 700b are structurally identical and are arranged side-by-side along a virtual axis. This layout allows the two sub-modules to be located in close spatial positions that may have slight differences in magnetic fields, providing an ideal physical basis for differential detection. Furthermore, the compact design of each unit within each sub-module, with 90° rotation, enables highly sensitive magnetic field direction detection locally, while the overall side-by-side layout extends this detection capability to the dimension of differential or gradient measurements.

[0150] In one embodiment, the technical solution provided by the present invention is to provide an angle sensor, including: a substrate, and a bridge circuit formed on the substrate, the bridge circuit including: at least one such as Figure 5 The AMR magnetoresistive unit 300 shown; or at least one such as Figure 6 The AMR magnetoresistive module 400 shown; or at least one such as Figure 7 The AMR magnetoresistive module 500 shown; or at least one such as Figure 8 The AMR magnetoresistive module 600 shown; or at least one such as Figure 9 The AMR magnetoresistive module 700 is shown.

[0151] In one embodiment, the technical solution provided by the present invention is to provide a chip, comprising: at least one such chip... Figure 5 The AMR magnetoresistive unit 300 shown; or at least one such as Figure 6 The AMR magnetoresistive module 400 shown; or at least one such as Figure 7 The AMR magnetoresistive module 500 shown; or at least one such as Figure 8 The AMR magnetoresistive module 600 shown; or at least one such as Figure 9 The AMR magnetoresistive module 700 is shown.

[0152] Those skilled in the art will understand that the AMR magnetoresistive units in this application can be electrically connected to each other as needed, and this application is not limited thereto.

[0153] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. An AMR magnetoresistive cell characterized by, The AMR magnetic resistance unit comprises a plurality of first AMR magnetic resistance strips, each of which is an arc-shaped strip structure with an arc length of 60 degrees and is distributed radially around a center. Each of the first AMR magnetic resistance strips is greater than the arc length of the adjacent first AMR magnetic resistance strip on the inner side, and the first AMR magnetic resistance unit as a whole is in a fan-shaped structure. Each of the first AMR magnetic resistance strips is in series. The interval between the adjacent first AMR magnetic resistance strips is equal.

2. The AMR magnetoresistive cell of claim 1 wherein, The AMR magnetic resistance unit comprises a plurality of first AMR magnetic resistance strips, each of which is an arc-shaped strip structure with an arc length of 60 degrees and is distributed radially around a center.

3. The AMR magnetoresistive cell of claim 1 wherein, Each of the first AMR magnetic resistance strips is greater than the arc length of the adjacent first AMR magnetic resistance strip on the inner side, and the first AMR magnetic resistance unit as a whole is in a fan-shaped structure.

4. An AMR magnetoresistive module characterized by, The bridge comprises a plurality of first AMR magnetic resistance units as claimed in claim 1. Each of the first AMR magnetic resistance strips is greater than the arc length of the adjacent first AMR magnetic resistance strip on the inner side, and the first AMR magnetic resistance unit as a whole is in a fan-shaped structure.

5. An angle sensor, characterized by The bridge comprises a plurality of first AMR magnetic resistance units as claimed in claim 1. The bridge further comprises a plurality of second AMR magnetic resistance units. The second AMR magnetic resistance unit has the same structure as the first AMR magnetic resistance unit, and the number of the second AMR magnetic resistance units is equal to that of the first AMR magnetic resistance units.

6. The angle sensor of claim 5, wherein The bridge comprises a plurality of first AMR magnetic resistance units and a plurality of second AMR magnetic resistance units, which share the same center, and each of the second AMR magnetic resistance units is formed in one of the fan-shaped gaps, so that the first AMR magnetic resistance units and the second AMR magnetic resistance units are alternately distributed in the circumferential direction.

7. The angle sensor of claim 5, wherein, For any second AMR magnetic resistance unit, the second AMR magnetic resistance strips located relatively close to the center are arranged in the fan-shaped gap, and the second AMR magnetic resistance strips located relatively far from the center are arranged outside the fan-shaped gap.

8. The angle sensor of claim 7, wherein, The AMR magnetic resistance unit comprises a first sub-AMR magnetic resistance unit and a second sub-AMR magnetic resistance unit. The first sub-AMR magnetic resistance unit comprises a plurality of first sub-AMR magnetic resistance strips, each of which is an arc-shaped strip structure with an arc length of 60 degrees and is distributed radially around a first center.

9. The angle sensor of claim 8, wherein, The second sub-AMR magnetic resistance unit comprises a plurality of second sub-AMR magnetic resistance strips, each of which is an arc-shaped strip structure with an arc length of 60 degrees and is distributed radially around a second center.

10. The angle sensor of claim 9, wherein, ​ ​ ​ ​ ​ The first sub-AMR magnetic resistance unit and the second sub-AMR magnetic resistance unit, the number of the first sub-AMR magnetic resistance strips is equal to the number of the second sub-AMR magnetic resistance strips, the first sub-AMR magnetic resistance strip closest to the first circle center is connected to the second sub-AMR magnetic resistance strip farthest from the second circle center, the first sub-AMR magnetic resistance strip next closest to the first circle center is connected to the second sub-AMR magnetic resistance strip next farthest from the second circle center, and so on, each of the first sub-AMR magnetic resistance strips is sequentially connected to one of the second sub-AMR magnetic resistance strips; In the plurality of first sub-AMR magnetic resistance strips, the arc length of each first sub-AMR magnetic resistance strip is greater than that of the adjacent first sub-AMR magnetic resistance strip on the inner side, and the first sub-AMR magnetic resistance unit as a whole has a fan-shaped structure; In the plurality of second sub-AMR magnetic resistance strips, the arc length of each second sub-AMR magnetic resistance strip is greater than that of the adjacent second sub-AMR magnetic resistance strip on the inner side, and the second sub-AMR magnetic resistance unit as a whole has a fan-shaped structure.

12. An AMR magnetoresistive module characterized by, The eight AMR magnetic resistance units as claimed in claim 11 are uniformly distributed along the circumference, and each of the AMR magnetic resistance units is distributed in a 45-degree sector space of the circumference.

13. The AMR magnetoresistive module of claim 12, wherein, In the eight AMR magnetic resistance units, each AMR magnetic resistance unit is arranged at a 45-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction.

14. An AMR magnetoresistive module characterized by, The first sub-AMR magnetic resistance module and the second sub-AMR magnetic resistance module are included. The first sub-AMR magnetic resistance module and the second sub-AMR magnetic resistance module each include four AMR magnetic resistance units as claimed in claim 11. The first sub-AMR magnetic resistance module and the second sub-AMR magnetic resistance module are respectively distributed on both sides of an axis, and the first sub-AMR magnetic resistance module and the second sub-AMR magnetic resistance module are arranged staggered along the extension direction of the axis, so that the AMR magnetic resistance module as a whole has a rectangular structure.

15. The AMR magnetoresistive module of claim 14, wherein, In the first sub-AMR magnetic resistance module, each AMR magnetic resistance unit is arranged at a 45-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction. In the second sub-AMR magnetic resistance module, each AMR magnetic resistance unit is arranged at a 45-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction.

16. An AMR magnetoresistive module, characterized by, The third sub-AMR magnetic resistance module and the fourth sub-AMR magnetic resistance module are included. The third sub-AMR magnetic resistance module and the fourth sub-AMR magnetic resistance module each include four AMR magnetic resistance units as claimed in claim 11. In the third sub-AMR magnetic resistance module, the four AMR magnetic resistance units are uniformly distributed along the circumference around a circle center, and each adjacent two AMR magnetic resistance units are spaced apart to form a gap, thus forming four gaps uniformly distributed along the circumference. In the fourth sub-AMR magnetic resistance module, each AMR magnetic resistance unit is arranged in one of the gaps.

17. The AMR magnetoresistive module of claim 16, wherein, In the third sub-AMR magnetic resistance module, each of the AMR magnetic resistance units is arranged at a 90-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction. In the fourth sub-AMR magnetic resistance module, each of the AMR magnetic resistance units is arranged at a 90-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction.

18. An AMR magnetoresistive module, characterized by, The AMR magnetic resistance module comprises a fifth sub-AMR magnetic resistance module and a sixth sub-AMR magnetic resistance module. The fifth sub-AMR magnetic resistance module and the sixth sub-AMR magnetic resistance module are the same in structure and arranged in a row. In the fifth sub-AMR magnetic resistance module or the sixth sub-AMR magnetic resistance module, four AMR magnetic resistance units as claimed in claim 11 are included, and the four AMR magnetic resistance units are uniformly distributed around a center in a circumferential direction, two adjacent AMR magnetic resistance units are closely adjacent, and each of the AMR magnetic resistance units is arranged at a 90-degree angle clockwise relative to the previous AMR magnetic resistance unit in a clockwise direction.

19. The AMR magnetoresistive module of claim 18, wherein, In a clockwise direction, the sixth sub-AMR magnetic resistance module is arranged at a 90-degree angle relative to the fifth sub-AMR magnetic resistance module.

20. An angle sensor, characterized by It comprises: a substrate, and a bridge formed on the substrate, the bridge comprising: at least one AMR magnetic resistance unit as claimed in claim 11; or an AMR magnetic resistance module as claimed in claim 12 or 13; or an AMR magnetic resistance module as claimed in claim 14 or 15; or an AMR magnetic resistance module as claimed in claim 16 or 17; or an AMR magnetic resistance module as claimed in claim 18 or 19.

21. A chip, characterized by It comprises: at least one AMR magnetic resistance unit as claimed in any one of claims 1 to 3; or at least one AMR magnetic resistance unit as claimed in claim 11; or an AMR magnetic resistance module as claimed in claim 12 or 13; or an AMR magnetic resistance module as claimed in claim 14 or 15; or an AMR magnetic resistance module as claimed in claim 16 or 17; or an AMR magnetic resistance module as claimed in claim 18 or 19.

Images