Die bonding condition testing device and testing method

Abstract

The invention discloses a die bonding condition testing device and a die bonding condition testing method. The die bonding condition testing device comprises a force sensor; the test carrying table is arranged on the force sensor, the test carrying table is configured to place an adhesive, and the adhesive is located on the side, away from the force sensor, of the test carrying table; the bearing mechanism is configured to bear a wafer film, the wafer film comprises a die bonding film and a wafer, the wafer is located on the side, close to the test carrying table, of the die bonding film, and when the wafer is located on the die bonding film and the die bonding film is in a flattened state, the wafer and the adhesive are arranged at an interval; the probe is positioned on one side, far away from the test carrying table, of the wafer film; the adhesive is a soldering flux or an auxiliary adhesive; and the die bonding condition testing device is used for testing the bonding strength between the wafer and the soldering flux and testing the bonding strength between the wafer and the die bonding film after dispergation.

Description

Technical Field

[0001] This disclosure belongs to the field of semiconductor device manufacturing technology, and in particular relates to a die bonding condition testing apparatus and testing method. Background Technology

[0002] In the packaging process of semiconductor products such as integrated circuits (ICs) or light-emitting diodes (LEDs), die bonding is an extremely important step.

[0003] In related technologies, semiconductor products are manufactured by bonding wafers onto a die bond film to form a wafer film. During the die bond process, a dispensing mechanism (also called a dispensing module) or a printer first applies or coats flux to the die bond station on the substrate. Then, the die bonder (also called a die bonder head) presses the wafer from the desizing die bond film onto the substrate. The wafer adheres to the flux and, under the bonding effect of the flux, separates from the desizing die bond film, and is then transferred to a substrate with flux already applied.

[0004] Needle bonding refers to a process in which a probe that vibrates up and down presses the wafer on the wafer, causing the wafer to detach from the descaling film and be placed on the corresponding fixed position on the substrate. However, this bonding process often results in substrate defects, leading to a high bonding failure rate and high production costs.

[0005] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0006] This disclosure aims to at least partially solve the technical problems of high die bonding failure rate and high production cost caused by substrate defects in the die bonding process. To this end, this disclosure provides a die bonding condition testing apparatus and method.

[0007] This disclosure provides a die bonding condition testing apparatus, comprising: a force sensor; a test stage disposed on the force sensor and configured to hold an adhesive, the adhesive being located on the side of the test stage away from the force sensor; a support mechanism configured to support a wafer film, the wafer film including a die bonding film and a wafer, the wafer being located on the side of the die bonding film closer to the test stage, wherein when the wafer is placed on the die bonding film and the die bonding film is in a flattened state, the wafer and the adhesive are spaced apart; and a probe. The probe is located on the side of the wafer film away from the test stage; the adhesive is a flux or an auxiliary adhesive; when the adhesive is a flux, and the bond strength between the wafer and the flux is less than the bond strength between the wafer and the die bond film, the die bond condition testing device is used to test the bond strength between the wafer and the flux; when the adhesive is an auxiliary adhesive, and the bond strength between the wafer and the auxiliary adhesive is greater than the bond strength between the wafer and the die bond film after desizing, the die bond condition testing device is used to test the bond strength between the wafer and the die bond film after desizing.

[0008] In some embodiments, the die bonding condition testing apparatus further includes a damping mechanism, on which the force sensor is disposed.

[0009] In some embodiments, the damping mechanism is an air-floating damper.

[0010] In some embodiments, the support mechanism is configured to support a wafer stage located on the side of the test stage away from the force sensor, the wafer stage being used to support the wafer film.

[0011] In some embodiments, the die bonding condition testing apparatus further includes an optical inspection mechanism configured to perform positioning inspection on the wafer.

[0012] In some embodiments, the die bonding condition testing apparatus further includes a housing that covers at least the force sensor and the wafer stage.

[0013] In some embodiments, the die bonding condition testing apparatus further includes: a first moving mechanism configured to fix and support the force sensor, or the first moving mechanism configured to adjust the horizontal height of the force sensor.

[0014] In some embodiments, the support mechanism is configured to fix and support the wafer stage, or the support mechanism is configured to adjust the horizontal height and / or horizontal position of the wafer stage.

[0015] In some embodiments, the die bonding condition testing apparatus further includes a needle-punching die bonding mechanism, which includes the probe.

[0016] In some embodiments, the die bonding condition testing apparatus further includes: a third moving mechanism configured to fix and support the needle-punching die bonding mechanism, or the third moving mechanism configured to adjust the horizontal height and horizontal position of the needle-punching die bonding mechanism.

[0017] This disclosure also proposes a testing method for the above-described die bonding condition testing apparatus. The testing method includes: placing an adhesive; mounting a wafer film; and performing a die bonding operation to obtain the test results of a force sensor. The adhesive is a flux or an auxiliary adhesive. When the adhesive is a flux, and the bonding strength between the wafer and the flux is less than the bonding strength between the wafer and the die bonding film, the bonding strength between the wafer and the flux is obtained based on the test results. When the adhesive is an auxiliary adhesive, and the bonding strength between the wafer and the auxiliary adhesive is greater than the bonding strength between the wafer and the die bonding film after desoldering, the bonding strength between the wafer and the die bonding film after desoldering is obtained based on the test results.

[0018] The embodiments disclosed herein have at least the following beneficial effects:

[0019] The aforementioned die bonding condition testing apparatus, when flux is placed on the test stage, ensures that the wafer and die bonding film in the wafer film are not debonded, maintaining a high adhesion strength between the wafer and the die bonding film, greater than the adhesion strength between the wafer and the flux. The probe, support mechanism, and test stage simulate the needle-punch die bonding process. When the probe is pressed down, the wafer is pressed onto the flux on the test stage. When the probe is lifted, the wafer is lifted upwards under the action of the die bonding film, bonding with the flux, and then separating from the flux under the action of the die bonding film. This allows for the measurement of the wafer and flux bonding conditions. Adhesion strength; When auxiliary adhesive is placed on the test stage, the wafer and die bond film in the wafer film are simultaneously debonded to ensure that the adhesion strength between the wafer and the auxiliary adhesive is greater than the adhesion strength between the wafer and the debonded die bond film. The process of needle-punch die bonding is simulated using a probe, a support mechanism, and a test stage. When the probe is pressed down, the wafer is pressed onto the flux on the test stage. When the probe is lifted, the wafer adheres to the auxiliary adhesive. When the debonded die bond film is lifted upwards, it separates from the wafer, leaving the wafer on the auxiliary adhesive. This allows for the measurement of the adhesion strength between the wafer and the debonded die bond film. The aforementioned die bond condition testing device, by testing the adhesion strength between the wafer and the flux, and the adhesion strength between the wafer and the debonded die bond film, can perform quality control on the debonded wafer film and / or flux. This can, to some extent, avoid substrate defects caused by unstable adhesion strength of the debonded wafer film and / or flux during needle-punch die bonding, thereby improving the yield of needle-punch bonding and reducing production costs. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 A schematic diagram of the die-bonding condition testing apparatus in an embodiment of this disclosure is shown;

[0022] Figure 2 A three-dimensional structural schematic diagram of the die-bonding condition testing device in an embodiment of this disclosure is shown;

[0023] Figure 3 It shows Figure 2 Top view of the wafer stage;

[0024] Figure 4 It shows Figure 2 A diagram showing the state of a wafer carrier stage supporting a wafer film.

[0025] Figure 5 It shows Figure 4 Cross-sectional view of the wafer stage;

[0026] Figure 6 This illustration shows a schematic diagram of the test process of the die bonding condition test apparatus in this embodiment of the present disclosure for testing the adhesion strength between the wafer and the die bonding film after adhesive removal;

[0027] Figure 7 It shows Figure 6 Test result curves of the test apparatus under medium solidification conditions;

[0028] Figure 8 This illustration shows a schematic diagram of the test process of the die bonding condition test apparatus in an embodiment of the present disclosure for testing the adhesion strength between the wafer and the flux.

[0029] Figure label:

[0030] 100 Force sensor; 110 Base; 120 Sensor instrument; 130 Control center; 200 Test stage; 300 Shock absorption mechanism; 400 Wafer stage; 410 Inner wafer ring; 420 Outer wafer ring; 500 Optical inspection mechanism; 600 Housing; 700 Probe; 800 Third moving mechanism; 810 First moving component; 820 Second moving component; 830 Third moving component; 1000 Die bonding film; 2000 Wafer; 3000 Auxiliary adhesive; 4000 Flux; H1 First distance; H2 Second distance; D1 First horizontal direction; D2 Second horizontal direction; D1 Vertical direction. Detailed Implementation

[0031] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments of this disclosure, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this disclosure.

[0032] Furthermore, reference numerals and / or reference letters may be repeated in different examples in this disclosure. Such repetition is for simplification and clarity purposes and does not in itself indicate a relationship between the various embodiments and / or settings discussed. In addition, this disclosure provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0033] This disclosure is described below with reference to the accompanying drawings and specific embodiments:

[0034] In the packaging process of semiconductor chips such as light-emitting diodes (LEDs), die bonding is an extremely important step.

[0035] In related technologies, wafers 2000 are bonded to a die-bonding film 1000 tape to form a wafer film. Wafers 2000 can be used to fabricate semiconductor chips or light-emitting diodes (LEDs). Before die bonding, measures such as ultraviolet light irradiation, heating, and freezing can be used to reduce the adhesive strength of the die-bonding film 1000, i.e., to perform a debonding process on the die-bonding film 1000. After debonding, the adhesive strength between the die-bonding film 1000 and the wafer 2000 is reduced. During the die bonding process, flux 4000 is first applied or coated on the die bonding station of the substrate by a dispensing mechanism (also known as a dispensing module) or a printer. Then, the die bonding mechanism (also known as a die bonding head) presses the wafer 2000 in the desizing wafer film onto the substrate, so that the wafer 2000 and flux 4000 are bonded. Under the bonding action of flux 4000, the wafer 2000 separates from the desizing die bonding film 1000 and is then transferred to the substrate on which flux 4000 has been applied.

[0036] Needle bonding refers to the process of pressing the wafer 2000 on the wafer with a probe that vibrates up and down, so that the wafer 2000 is detached from the descaling die bond film 1000 and placed on the corresponding fixed position on the substrate. However, this bonding process often results in substrate defects, leading to a high bonding failure rate and high production cost.

[0037] This disclosure, through research, found that substrate defects in the needle-punch die bonding process have a low correlation with the die bonding mechanism, but a higher correlation with the die bonding film 1000 and / or flux 4000. This is because both the die bond film 1000 and the flux 4000 are greatly affected by the environment. When the temperature is too high, the adhesion of the flux 4000 decreases, while the adhesion of the die bond film 1000 increases. When the humidity increases, a layer of water vapor forms on the surface of the flux 4000, which reduces its adhesion. The adhesion of the die bond film 1000 often increases due to prolonged storage. The changes in the adhesion of the die bond film 1000 and the flux 4000 due to various reasons make the adhesion strength between the die bond film 1000 and the wafer 2000, and between the flux 4000 and the wafer 2000, uncontrollable. As a result, in the die bond process, when the adhesion strength between the die bond film 1000 and the wafer 2000 after partial desoldering is greater than that between the flux 4000 and the wafer 2000, the wafer 2000 cannot be transferred to the substrate, leading to defective die bond products. Furthermore, during the die bonding process, when the wafer 2000 at the substrate defect location is pressed down to contact the flux 4000, some of the flux 4000 is carried away. This missing flux 4000 cannot be recovered. If there are a large number of defective components on the substrate after die bonding, targeted repair is impossible, often requiring the removal of all transferred wafers 2000, rendering the entire die bonding process ineffective and severely impacting its cost. In addition, when analyzing defective components in the die bonding process, the lack of relevant testing equipment prevents data-driven experimental analysis. Moreover, since the adhesion strength of the die bond film 1000 and flux 4000 after adhesive removal varies due to various factors, it is impossible to accurately and effectively analyze which specific step caused the substrate defect, thus hindering the development of effective improvement measures.

[0038] This disclosure provides an apparatus for testing die-bonding conditions, such as... Figures 1 to 8 As shown, the die bonding condition testing apparatus includes a force sensor 100, a test stage 200, a support mechanism, and a probe 700. The test stage 200 is disposed on the force sensor 100 and is configured to hold an adhesive, with the adhesive located on the side of the test stage 200 away from the force sensor 100. The support mechanism is configured to support a wafer film, which includes a die bonding film 1000 and a wafer 2000. The wafer 2000 is located on the side of the die bonding film 1000 closer to the test stage 200. When the wafer 2000 is on the die bonding film 1000 and the die bonding film 1000 is in a flattened state, the wafer 200 and the adhesive are spaced apart. The probe 700 is located on the side of the wafer film away from the test stage 200.

[0039] The die-bonding condition testing apparatus proposed in the embodiments of this disclosure, such as Figures 1 to 8As shown, the process of die bonding can be simulated by pressing down the probe 700 to press the wafer 2000 onto the adhesive on the test stage 200. When the probe 700 is lifted, the die bonding film 1000 is lifted upward, applying an upward force to the wafer 2000. Based on the relative magnitudes of the bonding strength between the wafer 2000 and the die bonding film 1000 and the bonding strength between the wafer 2000 and the adhesive, the wafer 2000 may separate from the die bonding film 1000 or from the adhesive. The force sensor 100 measures the magnitude of the pulling force when the wafer 2000 separates from the die bonding film 1000 or from the adhesive, thus obtaining the bonding strength between the wafer 2000 and the die bonding film 1000 or the bonding strength between the wafer 2000 and the adhesive. Through the die bonding condition testing device, at least the quality control of the wafer film can be achieved, thereby avoiding substrate defects during the die bonding process to a certain extent, improving the yield of die bonding and reducing production costs.

[0040] In some embodiments of this disclosure, the adhesive is a flux or an auxiliary adhesive. When the adhesive is a flux, and the bond strength between the wafer 2000 and the flux is less than the bond strength between the wafer 2000 and the die bond film 1000, the die bond condition testing device is used to test the bond strength between the wafer 1000 and the flux. When the adhesive is an auxiliary adhesive, and the bond strength between the wafer 2000 and the auxiliary adhesive is greater than the bond strength between the wafer 2000 and the die bond film 1000 after desizing, the die bond condition testing device is used to test the bond strength between the wafer 2000 and the die bond film 1000 after desizing.

[0041] In some embodiments of this disclosure, such as Figure 8 As shown, when flux 4000 is placed on the test stage 200, because the adhesion strength between the wafer 2000 and the flux is less than the adhesion strength between the wafer 2000 and the die bond film 1000, the wafer 2000 and the die bond film 1000 in the wafer film do not delaminate, thus ensuring that the wafer 2000 and the die bond film 1000 maintain a large adhesion strength, and the adhesion strength between the wafer 2000 and the die bond film 1000 is greater than that between the wafer 2000 and the flux 4000. The bonding strength of 00 is determined by simulating the die bonding process using a die bonding condition test device. The wafer 2000 is pressed onto the flux 4000 on the test stage 200. When the probe 700 is lifted, the wafer 2000 is lifted upward under the action of the die bonding film 1000. After the wafer 2000 and the flux 4000 are bonded, they are separated from the flux 4000 under the action of the die bonding film 1000. Thus, the bonding strength between the wafer 2000 and the flux 4000 can be obtained.

[0042] In some embodiments of this disclosure, such as Figure 6As shown, when the auxiliary adhesive 3000 is placed on the test stage 200, the wafer 2000 in the wafer film is debonded from the die bond film 1000 to ensure that the bonding strength between the wafer 2000 and the auxiliary adhesive 3000 is greater than the bonding strength between the wafer 2000 and the die bond film 1000 after debonding. By simulating the process of needle-punching die bonding, the wafer 2000 is pressed onto the auxiliary adhesive 3000 on the test stage 200. When the probe 700 is lifted, the wafer 2000 and the auxiliary adhesive 3000 are bonded. When the die bond film 1000 is lifted upward after debonding, it separates from the wafer 2000 and leaves the wafer 2000 on the auxiliary adhesive 3000. Thus, the bonding strength between the wafer 2000 and the die bond film 1000 after debonding can be obtained.

[0043] The die bonding condition testing apparatus of this disclosure can perform quality control on the wafer film and / or flux 4000 by testing the adhesion strength between the wafer 2000 and the flux 4000 and the adhesion strength between the wafer 2000 and the die bonding film 1000 after desoldering. This can, to a certain extent, avoid substrate defects during the die bonding process, thereby improving the yield of die bonding and reducing production costs.

[0044] The die bonding condition testing device proposed in this embodiment simulates die bonding conditions and records the force change curve of the test stage during the needle-punching die bonding process using a force sensor 100. Based on the force change curve of the test stage tested by the force sensor 100, it is possible to analyze whether there is any abnormality in the needle-punching die bonding process.

[0045] The die-bonding condition testing apparatus proposed in the embodiments of this disclosure, such as Figures 1 to 8 As shown, by implementing quality control on the die bond film 1000 and / or flux 4000, it is possible to further control whether the wafer film and / or flux 4000 meet the production standards. This ensures that the bonding strength between the die bond film 1000 and the wafer 2000 after desoldering is within a reasonable process window range. To a certain extent, this can prevent substrate defects caused by excessive bonding force of the die bond film 1000 after desoldering, which would prevent the wafer 2000 from being transferred to the substrate. This improves the overall yield of the die bond process. At the same time, it can reduce the amount of scrapped defective products in the die bond process, reduce the consumption of production materials, effectively reduce the material and personnel costs of the die bond process, and thus reduce the cost of a single semiconductor chip product. This can broaden the product market and enhance the product's competitiveness.

[0046] The die bonding condition testing device proposed in this embodiment has a simple structure, low cost, low material consumption, and is easy to control and operate. It can simulate various die bonding conditions in the die bonding process and perform corresponding tests, filling the gap in substrate component measurement during the die bonding process.

[0047] Adhesive strength refers to the stress required to cause failure at the interface between the adhesive and the adherend in an adhesive component or its vicinity under the action of external force. In the embodiments of this disclosure, when testing the adhesive strength between the wafer 2000 and the flux, the adhesive component refers to the structure formed by bonding the wafer 2000 and the flux, the adhesive refers to the flux, and the adherend refers to the wafer 2000; when testing the adhesive strength between the wafer 2000 and the die-attach film 1000, the adhesive component refers to the structure formed by bonding the wafer 2000 and the die-attach film 1000, the adhesive refers to the die-attach film, and the adherend refers to the wafer 2000. Since adhesive force cannot be measured in a destructive manner, the index for evaluating the mechanical properties of an adhesive system is usually adhesive strength rather than adhesive force.

[0048] This embodiment of the disclosure reflects the adhesive strength between the wafer 2000 and the flux 4000, and the adhesive strength between the wafer 2000 and the die bond film 1000 after desizing, by testing the adhesion strength between the wafer 2000 and the flux 4000, and the adhesive strength between the wafer 2000 and the die bond film 1000 after desizing.

[0049] In some embodiments of this disclosure, a wafer refers to a silicon wafer used to manufacture semiconductor products, the raw material of which is silicon. High-purity polycrystalline silicon is dissolved and doped with silicon crystal seeds, then slowly pulled out to form a cylindrical single-crystal silicon rod. The single-crystal silicon rod is then ground, polished, and sliced ​​to form a silicon wafer, or wafer. The wafer needs to be further diced into wafers 2000. During the dicing process, the wafer is first bonded to a die-bonding film 1000, and then the wafer on the die-bonding film 1000 is diced into wafers 2000, forming a wafer film structure with wafers 2000 bonded to the die-bonding film 1000. The die-bonding process is the process of transferring the wafers 2000 from the die-bonding film 1000 to the substrate.

[0050] In some embodiments of this disclosure, the die bond film 1000 is used to adhere to the wafer. Its function is to ensure that after the wafer is diced into wafers 2000, the wafers 2000 remain adhered to the die bond film 1000, preventing them from becoming scattered due to dicing. Optionally, the die bond film 1000 may include a base film layer and an adhesive layer coated on the base film layer. This adhesive layer can be debonded under ultraviolet light, heating, or freezing conditions. During wafer dicing, transportation, and storage, the adhesive layer maintains high adhesive strength, ensuring that the wafer / wafer 2000 is adhered to the die bond film 1000 and does not detach. Before die bonding, the die bond film 1000 needs to be debonded, i.e., the adhesive layer is cured by ultraviolet light or other methods, causing the adhesive layer to lose approximately 98% of its adhesive strength, thereby reducing the bond strength between the die bond film 1000 and the wafer 2000. By removing the adhesive, the wafer 2000 on the die bond film 1000 can be successfully removed from the die bond film 1000 by the flux 4000 when it comes into contact with the flux 4000 during the die bond process.

[0051] In some embodiments of this disclosure, the test stage 200 may optionally be detachably mounted on the force sensor 100 so that it can be replaced if the test stage 200 is corroded or damaged, or disassembled and cleaned if the test stage 200 is contaminated.

[0052] In some embodiments of this disclosure, optionally, the surface of the test stage 200 is treated with an anti-corrosion coating to prevent the acidic corrosion of the flux 4000 from damaging the test stage 200 when it is carrying flux 4000.

[0053] In some embodiments of this disclosure, such as Figures 1 to 8 As shown, the force sensor 100, also known as a resistance strain gauge sensor, belongs to the weighing sensor series. The force sensor 100 can be composed of an elastic body, a strain gauge, and a testing circuit. The elastic body is the key component; it can be made of metallic materials and possesses sufficient elasticity to transmit tensile and compressive forces. The strain gauge is a resistive element attached to the elastic body, used to measure the deformation of the elastic body. The testing circuit converts the resistance change of the strain gauge into an electrical signal output. This type of force sensor 100 has high durability and reliability, effectively improving the accuracy of test results.

[0054] In some embodiments of this disclosure, the response range of the force sensor 100 can be between -10g and 10g, which can meet the testing range requirements for the bonding strength between the wafer 2000 and the flux 4000, and the bonding strength between the wafer 2000 and the die-bonded film 1000 after desizing. Optionally, the resolution of the force sensor 100 can be between 0.01g and 1g, for example, the resolution of the force sensor 100 is 0.01g, or the resolution of the force sensor 100 is 0.1g, or the resolution of the force sensor 100 is 1g.

[0055] In some embodiments of this disclosure, flux 4000 is a mixture with rosin as the main component. Flux 4000 can be used during soldering to isolate oxygen, clean the oxide film on the substrate surface, assist heat conduction, and reduce surface tension. Flux 4000 has the characteristics of being viscous and having low fluidity. In the die bonding process, it can be used to transfer the wafer 2000 from the desoldered die bond film 1000 to the substrate.

[0056] In some embodiments of this disclosure, before simulating the die bonding process and testing the die bonding conditions, an auxiliary adhesive 3000 can be attached to the test stage 200. The auxiliary adhesive 3000 serves to adhere and fix the wafer 2000 to the test stage 200, thereby ensuring that the wafer 2000 is separated from the desorbed die bonding film 1000, thus allowing for testing of the adhesion strength between the wafer 2000 and the desorbed die bonding film 1000.

[0057] In some embodiments of this disclosure, when the die bonding condition testing apparatus tests the bonding strength between the wafer 2000 and the desorbed die bonding film 1000, in order to ensure that the wafer 2000 can be bonded and fixed on the test stage 200 by the auxiliary adhesive 3000 and then separated from the desorbed die bonding film 1000, it is necessary to ensure that the bonding strength between the auxiliary adhesive 3000 and the wafer 2000 is greater than the bonding strength between the wafer 2000 and the desorbed die bonding film 1000.

[0058] In some embodiments of this disclosure, the die bonding condition testing apparatus can also test the bonding strength between the wafer 2000 and the die bonding film 1000 (without adhesive removal). In order to ensure that the wafer 2000 can be separated from the die bonding film 1000 (without adhesive removal) after being bonded and fixed on the test stage 200 by the auxiliary adhesive 3000, it is necessary to ensure that the bonding strength of the auxiliary adhesive 3000 is greater than the bonding strength between the wafer 2000 and the die bonding film 1000 (without adhesive removal).

[0059] In some embodiments of this disclosure, the auxiliary adhesive 3000 may optionally be double-sided tape, which is adhered to the test stage 200 to secure the wafer 2000 to the test stage 200 during the simulated die bonding process. Alternatively, the auxiliary adhesive 3000 may also be other types of adhesives that are easy to adhere to and remove from the test stage 200.

[0060] In some embodiments of this disclosure, the probe 700 may optionally include a probe and a voice coil motor (VCM), which is characterized by high frequency response and high precision. The probe is driven by the voice coil motor to switch between a pressing state and a lifting state.

[0061] As an alternative implementation method, such as Figure 1 As shown, the die bonding condition testing device also includes a shock absorption mechanism 300, and a force sensor 100 is mounted on the shock absorption mechanism 300.

[0062] If there is significant vibration around the die bonding condition testing device, the force generated by the vibration may be detected by the force sensor 100, resulting in continuous waveform noise. This continuous waveform noise risks overwhelming the valid waveform detected by the force sensor 100.

[0063] In some embodiments of this disclosure, the die bonding condition testing apparatus also includes a vibration damping mechanism 300. By placing the force sensor 100 on the vibration damping mechanism 300, the vibration damping mechanism 300 can dampen the force sensor 100, reduce the adverse effects of surrounding vibrations on the force sensor 100, and make the waveform detected by the force sensor 100 smooth, thereby improving the accuracy of the bond strength detection.

[0064] As an alternative implementation method, such as Figure 1 As shown, the shock absorption mechanism 300 is an air-floating shock absorber.

[0065] In some embodiments of this disclosure, the air-floating shock absorber is a relatively ideal vibration damping material that has a damping effect on oscillations. The air-floating shock absorber is a device that uses the compressibility and elasticity of gas to reduce vibrations, which can effectively reduce the vibration interference caused by the external environment to the force sensor 100 and improve the stability and accuracy of the force sensor 100.

[0066] In some embodiments of this disclosure, the air-floating shock absorber may include an upper plate, a lower plate, a sealing ring, a guide rod, and a regulating valve. A sealing ring filled with compressed air is installed between the upper and lower plates. The guide rod is used to fix the positions of the upper and lower plates, keeping them relatively stable. The regulating valve controls the amount of gas entering and exiting, thereby regulating the pressure and magnitude of the gas inside the sealing ring. When the external environment causes vibration to the force sensor 100, relative movement occurs between the upper and lower plates. At this time, the compressed air inside the sealing ring is compressed and deformed. The reaction force generated by the deformation can counteract the impact force from the external vibration, thereby reducing the vibration interference caused by the external environment to the force sensor 100. Simultaneously, the regulating valve automatically adjusts the pressure of the gas inside the sealing ring, thereby optimizing the damping characteristics of the air-floating shock absorber and further improving its damping effect. The air-floating shock absorber features high precision, low noise, energy saving, environmental friendliness, and high reliability, ensuring good damping effect on the force sensor 100.

[0067] As an alternative implementation method, such as Figures 1 to 5 As shown, the support mechanism is configured to support a wafer stage 400, which is located on the side of the test stage 200 away from the force sensor 100. The wafer stage 400 is used to support the wafer film.

[0068] In some embodiments of this disclosure, such as Figure 1 and Figure 2 As shown, the wafer stage 400 is used to support the wafer film, and the support mechanism is used to support the wafer stage 400 so that the wafer stage 400 and the wafer film can be suspended above the test stage 200. When the probe 700 presses down on the wafer 2000 in the wafer film, the area of ​​the die bond 1000 corresponding to the wafer 2000 deforms and moves down with the wafer 2000. The edge area of ​​the die bond 1000, which is fixed by the wafer stage 400, remains unchanged. After the probe 700 moves upward to reset, the die bond 1000 can be restored to a flattened state under the action of the edge area. The flattened state of the wafer film 1000 means that any position in the wafer film is at the same horizontal height compared to other positions, or that the wafer film 1000 is not subjected to any force in the direction perpendicular to the wafer film 1000.

[0069] In some embodiments of this disclosure, such as Figures 3 to 5As shown, optionally, the wafer stage 400 includes an inner wafer ring and an outer wafer ring. The outer wafer ring is sleeved outside the inner wafer ring and concentrically arranged with the inner wafer ring. The inner and outer wafer rings can support and expand the wafer film. Die expansion uniformly increases the spacing between the wafers 2000 to meet design requirements. By stretching the die bond film 1000, the spacing between the wafers 2000 can be expanded. Then, the stretched die bond film 1000 is placed over the inner wafer ring, and the outer wafer ring is sleeved over the stretched die bond film 1000 and the inner wafer ring from above, so that the edge of the stretched die bond film 1000 is clamped between the inner and outer wafer rings. That is, by clamping the wafer film from the upper and lower sides of the wafer film with the inner and outer wafer rings, the wafer film can be supported and stretched on the inner and outer wafer rings, and a certain spacing can be maintained between adjacent wafers 2000 on the wafer film.

[0070] As an alternative implementation method, such as Figure 1 As shown, the die bonding condition testing apparatus also includes an optical inspection mechanism 500, which is configured to perform positioning inspection on the wafer 2000.

[0071] In some embodiments of this disclosure, such as Figure 1 As shown, the Automated Optical Inspection (AOI) mechanism 500 is configured to perform positioning inspection on the wafer 2000 to ensure that the wafer 2000 corresponds to the position of the flux 4000 or auxiliary adhesive 3000 on the test stage 200, so that when the probe 700 presses down on the wafer film, the wafer 2000 on the wafer film can be accurately pressed onto the flux 4000 or auxiliary adhesive 3000 on the test stage 200.

[0072] In some embodiments of this disclosure, such as Figure 1 As shown, the optical inspection mechanism 500 can be mounted on the probe 700 and can move together with the probe 700, thereby ensuring that the relative position of the probe 700 and the wafer 2000, and the relative position of the wafer 2000 and the flux 4000 or auxiliary adhesive 3000 are determined by the optical inspection mechanism 500.

[0073] As an alternative implementation method, such as Figure 1 As shown, the die bonding condition testing device also includes a housing 600, which covers at least the force sensor 100 and the wafer stage 400.

[0074] In some embodiments of this disclosure, such as Figure 1As shown, optionally, the die bonding condition testing device also includes a housing 600, which covers at least the force sensor 100 and the wafer stage 400. This allows the force sensor 100 and the wafer stage 400 to be kept in a relatively dust-free and dry environment, preventing external dust, moisture, etc. from affecting the testing process of the die bonding condition testing device.

[0075] In some embodiments of this disclosure, such as Figure 1 As shown, optionally, the housing 600 can also enclose other components of the die bonding condition testing device to provide overall protection for the die bonding condition testing device.

[0076] As an optional implementation, the die bonding condition testing apparatus further includes a first moving mechanism, which is configured to fix the support force sensor 100, or the first moving mechanism is configured to adjust the horizontal height of the force sensor 100.

[0077] In some embodiments of this disclosure, such as Figure 1 As shown, optionally, the first moving mechanism in the die bonding condition testing device can be fixedly supported under the force sensor 100, and the force sensor 100 is set on the first moving mechanism. The first moving mechanism can fix the force sensor 100 and the test stage 200 set on the force sensor 100.

[0078] In some embodiments of this disclosure, such as Figure 1 As shown, optionally, the first moving mechanism in the die bonding condition testing apparatus can be supported under the force sensor 100, and the first moving mechanism can move at least in the height direction of the force sensor 100. This allows the horizontal height of the force sensor 100 to be adjusted, thereby adjusting the first distance H1 (the distance between the upper surface of the adhesive and the die bonding film 1000) between the test stage 200 and the wafer stage 400 located on the force sensor 100. By adjusting the first distance H1 between the test stage 200 and the wafer stage 400, different distance conditions between the wafer film and the substrate during die bonding can be simulated. This allows for testing the bonding strength between the wafer 2000 and the flux 4000 in the wafer film under different distance conditions, or testing the bonding strength between the wafer 2000 and the debonded die bonding film 1000 in the wafer film under different distance conditions.

[0079] In some embodiments of this disclosure, optionally, when testing with a die bonding condition testing device, the first distance H1 between the test stage 200 and the die bonding stage 400 can be adjusted by a first moving mechanism to simulate needle-punching die bonding conditions with different first distances H1.

[0080] As an alternative implementation, the support mechanism is configured to fix and support the wafer stage, or the support mechanism is configured to adjust the horizontal height and / or horizontal position of the wafer stage.

[0081] In some embodiments of this disclosure, optionally, the support mechanism in the die bonding condition testing apparatus is configured to fix and support the wafer stage 400, so that the wafer stage 400 is suspended above the test stage 200.

[0082] In some embodiments of this disclosure, optionally, the support mechanism in the die bonding condition testing apparatus is configured to adjust the horizontal height and / or horizontal position of the wafer stage. The support mechanism is supported under the wafer stage 400, so that the wafer stage 400 is suspended above the test stage 200. At the same time, the support mechanism can also move in the horizontal direction and / or the height direction, so that the horizontal height and / or horizontal position of the wafer stage 400 can be adjusted by the support mechanism, thereby adjusting the first distance H1 (the distance between the upper surface of the adhesive and the die bonding film 1000) between the wafer stage 400 and the test stage 200. By adjusting the first distance H1 between the wafer stage 400 and the test stage 200, different distance conditions between the wafer film and the substrate during the die bonding process can be simulated. This allows for testing the adhesion strength between the wafer 2000 and the flux 4000 in the wafer film under different distance conditions, or testing the adhesion strength between the wafer 2000 and the de-adhesive-bonded film 1000 in the wafer film under different distance conditions. Simultaneously, adjusting the horizontal height and / or horizontal position of the wafer stage 400 via the support mechanism adjusts the second distance H2 between the wafer stage 400 and the probe 700. By adjusting the second distance H2 between the wafer stage 400 and the probe 700, different distance conditions between the wafer film and the probe 700 during the die bonding process can be simulated. This allows for testing the bonding strength between the wafer 2000 and the flux 4000 in the wafer film under different distance conditions, or testing the bonding strength between the wafer 2000 and the die bonding film 1000 in the wafer film under different distance conditions. Simultaneously, the horizontal height and / or horizontal position of the wafer stage 400 are adjusted by the support mechanism, thereby adjusting the relative position of the wafer stage 400 and the flux 4000 or auxiliary adhesive 3000 on the test stage 200. This ensures that the wafer 2000 in the wafer film supported by the wafer stage 400 corresponds to the position of the flux 4000 or auxiliary adhesive 3000 on the test stage 200, so that when the probe 700 is pressed down, the wafer 2000 can be aligned and bonded to the flux 4000 or auxiliary adhesive 3000. This allows for testing the bonding strength between the wafer 2000 and the flux 4000 or the bonding strength between the wafer 2000 and the die bonded film 1000 after desoldering.

[0083] In some embodiments of this disclosure, when testing with a die bonding condition testing device, the first distance H1 between the wafer stage 400 and the test stage 200 can be adjusted by the support mechanism to simulate needle bonding conditions with different first distances H1.

[0084] In some embodiments of this disclosure, when testing with a die bonding condition testing apparatus, the position of the wafer stage 400 on the horizontal plane can be adjusted by the support mechanism so that the wafer 2000 to be tested for die bonding in the wafer film is located directly below the probe 700.

[0085] In some embodiments of this disclosure, the alignment of the wafer stage 400 and the probe 700 can be performed manually or automatically by means of electricity.

[0086] As an alternative implementation method, such as Figure 1 and Figure 2 As shown, the die bonding condition testing device also includes a needle-punching die bonding mechanism, which includes the aforementioned probe.

[0087] In some embodiments of this disclosure, such as Figure 1 and Figure 2 As shown, the die bonding condition testing device includes a needle-punching die bonding mechanism, and the test stage 200 is positioned below the probe 700 of the needle-punching die bonding mechanism, thereby integrating the force sensor 100, the test stage 200, and the needle-punching die bonding mechanism into an organic whole. Thus, the die bonding condition testing device can simulate different die bonding conditions of the die bonding process and test the bonding strength between the wafer 2000 and the flux 4000 and the bonding strength between the wafer 2000 and the die bonding film 1000 after desoldering under different die bonding conditions.

[0088] As an alternative implementation method, such as Figure 1 and Figure 2 As shown, the die bonding condition testing device also includes a third moving mechanism 800, which is configured to fix and support the needle die bonding mechanism, or the third moving mechanism 800 is configured to adjust the horizontal height and horizontal position of the needle die bonding mechanism.

[0089] In some embodiments of this disclosure, optionally, such as Figure 1 and Figure 2 As shown, the third moving mechanism 800 in the die bonding condition testing device is used to fix and support the needle bonding mechanism so that the needle bonding mechanism is suspended above the wafer stage 400.

[0090] In some embodiments of this disclosure, optionally, such as Figure 1 and Figure 2As shown, the third moving mechanism 800 in the die bonding condition testing device supports the needle bonding mechanism, suspending it above the wafer stage 400. Simultaneously, the third moving mechanism 800 can also move in the height and / or horizontal direction, thereby adjusting the horizontal height and / or horizontal position of the needle bonding mechanism 700, and consequently adjusting the second distance H2 between the probe 700 and the wafer stage 400. By adjusting the second distance H2 between the probe 700 and the wafer stage 400, different distance conditions between the probe 700 and the wafer film during die bonding can be simulated. This allows for testing the adhesion strength between the wafer 2000 and the flux 4000 in the wafer film under different distance conditions, or testing the adhesion strength between the wafer 2000 and the desizing die bonded film 1000 in the wafer film under different distance conditions. Simultaneously, the horizontal height and / or horizontal position of the needle-punching die-bonding mechanism are adjusted by the third moving mechanism 800, thereby adjusting the relative position of the needle-punching die-bonding mechanism and the flux 4000 or auxiliary adhesive 3000 on the test stage 200. This ensures that the position of the probe 700 in the needle-punching die-bonding mechanism corresponds to the position of the flux 4000 or auxiliary adhesive 3000 on the test stage 200, so that when the probe 700 is pressed down, the wafer 2000 can be aligned and bonded to the flux 4000 or auxiliary adhesive 3000. This allows for testing the bonding strength between the wafer 2000 and the flux 4000 or the bonding strength between the wafer 2000 and the die-bonding film 1000 after desoldering.

[0091] In some embodiments of this disclosure, optionally, such as Figure 2As shown, the third moving mechanism 800 may include a first moving component 810, a second moving component 820 connected to the first moving component 810, and a third moving component 830 connected to the second moving component 820. The needle-punching die-bonding mechanism is disposed on the third moving component 830. The first moving component 810 can drive the second moving component 820, the third moving component 830, and the needle-punching die-bonding mechanism to move in a first horizontal direction D1. The second moving component 820 can drive the third moving component 830 and the needle-punching die-bonding mechanism to move in a second horizontal direction D2 perpendicular to the first horizontal direction D1. The third moving component 830 can drive the needle-punching die-bonding mechanism to move in a vertical direction D1 perpendicular to both the first horizontal direction D1 and the second horizontal direction D2. Thus, through the first moving component 810, the second moving component 820, and the third moving component 830, the needle-punching die-bonding mechanism and the probe 700 can move arbitrarily in three dimensions. After the probe 700 in the needle bonding mechanism is adjusted to the relative position with the flux 4000 or auxiliary adhesive 3000 on the test stage 200 by the third moving mechanism 800, the probe 700 can be driven by the voice coil motor in the needle bonding mechanism to press the wafer film, thereby bonding the wafer 2000 on the wafer film with the flux 4000 or auxiliary adhesive 3000 on the test stage 200.

[0092] In some embodiments of this disclosure, optionally, such as Figure 2 As shown, the first moving component 810, the second moving component 820 and the third moving component 830 can be moved in the first horizontal direction D1, the second horizontal direction D2 and the vertical direction D1 by using linear motors, or they can be moved in the first horizontal direction D1, the second horizontal direction D2 and the vertical direction D1 by using a screw to convert the rotational motion of the screw motor into linear motion.

[0093] In some embodiments of this disclosure, optionally, such as Figure 1 As shown, the die bonding condition testing device also includes a sensor instrument 120, which is electrically connected to the force sensor 100. The test data of the force sensor 100 can be obtained through the sensor instrument 120.

[0094] In some embodiments of this disclosure, optionally, such as Figure 1 As shown, the die bonding condition testing device also includes a control center 130, which is electrically connected to the sensor instrument 120 and / or the force sensor 100. The control center 130 can control the die bonding condition testing device to perform testing work, and can also be used to display and analyze the test data of the force sensor 100, thereby improving the efficiency of analyzing the die bonding condition test results.

[0095] In some embodiments of this disclosure, optionally, such as Figure 1 As shown, the die bonding condition testing device may also include a base 110, through which the force sensor 100 is supported.

[0096] In some embodiments of this disclosure, the die bonding condition testing apparatus can simulate the die bonding process and test any one or more of the following die bonding conditions during the die bonding process:

[0097] 1. The bonding strength between the wafer 2000 and the flux 4000 can be used to determine whether there is an abnormal bonding force in the incoming flux 4000, or whether the flux 4000 is affected by the environment and has an abnormal bonding force under a specific die bonding environment.

[0098] 2. The bonding strength between the wafer 2000 and the die bond film 1000 after debonding. The test results can be used to determine whether there are bonding abnormalities in the incoming wafer film or whether there are bonding abnormalities in the wafer film after transportation and storage.

[0099] 3. The bonding strength between wafer 2000 and die bonded film 1000 after adhesive removal. The test results can be used to determine whether there are any bonding abnormalities in the incoming wafer film.

[0100] 4. The actual pressure of the probe on the chip during die bonding. The results of this test can determine the impact of the actual pressure of the probe on the chip on the die bonding effect.

[0101] 5. The effect of different probes on the die bonding effect during die bonding;

[0102] 6. The effect of different first and second heights on the die bonding effect during die bonding.

[0103] In some embodiments of this disclosure, the process of testing the adhesion strength between the wafer 2000 and the debonded die-bonding film 1000 using a die-bonding condition testing device is as follows: Figure 6 As shown.

[0104] Before testing with the die bonding condition testing device, firstly, the appropriate probe type is selected according to the die bonding process, and the corresponding first distance H1 and second distance H2 are set. Then, auxiliary adhesive 3000 is attached to the test stage 200, ensuring that the adhesion strength between the auxiliary adhesive 3000 and the wafer 2000 is greater than the adhesion strength between the debonded die bonding film 1000 and the wafer 2000. The adhesion strength between the debonded die bonding film 1000 and the wafer 2000 can be estimated based on the incoming parameters of the wafer film. Next, the wafer film is debonded, expanded, and stretched onto the wafer stage 400. The optical inspection mechanism 500 focuses the position, adjusting the position of the wafer film and / or the probe on the horizontal planes containing the first horizontal direction D1 and the second horizontal direction D2, so that one wafer 2000 in the wafer film is directly below the probe.

[0105] When tested using a die-bonding condition testing device, such as Figure 6 and Figure 7 As shown, the needle-punching die-bonding mechanism is activated, causing the probe 700 to press down above the wafer film, pressing the wafer film and the wafer 2000 corresponding to the position of the probe 700 onto the auxiliary adhesive 3000 on the test stage 200. The wafer 2000 is subjected to downward pressure from the probe 700. At this time, the force sensor 100 detects the pressure and generates a pressure signal. Figure 7 The positive extreme value F1 measured by the force sensor 100 reflects the pressure on the wafer 2000. Simultaneously, the wafer 2000 is bonded and fixed by the auxiliary adhesive 3000 on the measurement stage. Afterwards, the probe 700 retracts, and the wafer film tends to return to its original shape under the elastic action of the die-bonding film 1000, meaning the die-bonding film 1000 rises relative to the measurement stage 200. The die-bonding film 1000 exerts an upward pulling force on the wafer 2000, which the force sensor 100 detects and generates a pulling force signal. Since the adhesion strength between the auxiliary adhesive 3000 and the wafer 2000 is greater than the adhesion strength between the die-bonding film 1000 and the wafer 2000 after adhesive removal, the wafer 2000 separates from the removed die-bonding film 1000 under the pulling force. Figure 7 The negative extreme value F2 measured by the force sensor 100 is the tensile force experienced by the wafer 2000 when it separates from the debonded die bond film 1000, which can reflect the bonding strength between the debonded die bond film 1000 and the wafer 2000.

[0106] In some embodiments of this disclosure, the process of testing the bond strength between the wafer 2000 and the flux 4000 using a die bonding condition testing apparatus is as follows: Figure 8 As shown.

[0107] Before testing with the die bonding condition testing device, firstly, the appropriate probe type is selected according to the die bonding process, and the corresponding first distance H1 and second distance H2 are set; then, flux 4000 is applied to the test stage 200. Next, the unremoved wafer film is expanded and stretched taut on the wafer stage 400; the optical inspection mechanism 500 is used to focus the position, adjusting the position of the wafer film and / or the probe on the horizontal planes containing the first horizontal direction D1 and the second horizontal direction D2, so that a wafer 2000 in the wafer film is directly below the probe.

[0108] When tested using a die-bonding condition testing device, such as Figure 8As shown, the needle-punching die-bonding mechanism is activated, causing the probe 700 to press down above the wafer film, pressing the wafer film and the wafer 2000 corresponding to the probe position onto the flux 4000 on the test stage 200. The wafer 2000 is subjected to downward pressure from the probe. At this time, the force sensor 100 detects the pressure and generates a pressure signal. The positive extreme value measured by the force sensor 100 can reflect the pressure on the wafer 2000. At the same time, the wafer 2000 is bonded and fixed by the flux 4000 on the test stage. Afterward, the probe is retracted, and the wafer film tends to return to its original shape under the elastic action of the die-bonding film 1000. That is, the die-bonding film 1000 rises relative to the test stage, and the die-bonding film 1000 generates an upward pulling force on the wafer 2000. At this time, the force sensor 100 detects the pulling force and generates a pulling force signal. Since the wafer film has not undergone adhesive removal, the adhesion strength between the unremoved wafer film and the wafer 2000 is greater than the adhesion strength between the flux 4000 and the wafer 2000. Under the action of tension, the wafer 2000 and the flux 4000 separate. The negative extreme value measured by the force sensor 100 is the tension force experienced when the wafer 2000 and the flux 4000 separate, which can reflect the adhesion strength between the flux 4000 and the wafer 2000.

[0109] In some embodiments of this disclosure, when testing the effects of different probes, different first distances H1, and different second distances H2 on the die bonding effect during the die bonding process using a die bonding condition testing device, before testing with the die bonding condition testing device, different probes, different first distances H1, and different second distances H2 can be selected or set according to different testing purposes. The subsequent measurement process can refer to the measurement process of the adhesion strength between the wafer 2000 and the die bond film 1000 after adhesive removal, and will not be described again here.

[0110] Based on the same inventive concept, this disclosure also proposes a testing method for the above-mentioned die-bonding condition testing device, the testing method comprising:

[0111] Place adhesive;

[0112] Wafer film processing; and,

[0113] Perform a die bonding operation to obtain the test results of force sensor 100;

[0114] The adhesive is either flux 4000 or auxiliary adhesive 3000.

[0115] When the adhesive is flux 4000, and the bonding strength between wafer 2000 and flux 4000 is less than the bonding strength between wafer 2000 and die bond 1000, the bonding strength between wafer 2000 and flux 4000 is obtained according to the test results.

[0116] When the adhesive is auxiliary adhesive 3000, and the bonding strength between the wafer 2000 and the auxiliary adhesive 3000 is greater than the bonding strength between the wafer 2000 and the debonded die bond film 1000, the bonding strength between the wafer 2000 and the debonded die bond film 1000 is obtained according to the test results.

[0117] Since the test method provided in this disclosure uses the die bonding condition test device of the above-mentioned technical solution, the die bonding condition test method provided in this disclosure has all the beneficial effects of the above-mentioned die bonding condition test device, which will not be elaborated here.

[0118] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0119] In the description of this disclosure, it should be understood that the terms “center,” “longitudinal,” “lateral,” “length,” “width,” “thickness,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” “outer,” “clockwise,” and “counterclockwise” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0120] It should be noted that all directional indications in this embodiment are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0121] Furthermore, the use of terms such as "first" and "second" in this disclosure is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.

[0122] Furthermore, the technical solutions of the various embodiments can be combined with each other, but only if they are based on the ability of a person skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed in this disclosure.

[0123] Although embodiments of the present disclosure have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present disclosure, the scope of which is defined by the claims and their equivalents.

Claims

1. A die bonding condition testing apparatus, characterized by comprising: The die bonding condition testing device comprises: a force sensor; a test platform disposed on the force sensor, the test platform being configured to place an adhesive on a side of the test platform away from the force sensor; a bearing mechanism configured to bear a wafer film, the wafer film comprising a die bonding film and a wafer, the wafer being located on a side of the die bonding film close to the test platform, the wafer being spaced apart from the adhesive when the wafer is located on the die bonding film and the die bonding film is in a flattened state; and a probe located on a side of the wafer film away from the test platform; the adhesive is a flux or an auxiliary adhesive; when the adhesive is a flux and the bonding strength between the wafer and the flux is less than the bonding strength between the wafer and the die bonding film, the die bonding condition testing device is used to test the bonding strength between the wafer and the flux; when the adhesive is an auxiliary adhesive and the bonding strength between the wafer and the auxiliary adhesive is greater than the bonding strength between the wafer and the die bonding film after debonding, the die bonding condition testing device is used to test the bonding strength between the wafer and the die bonding film after debonding.

2. The die bonding condition testing apparatus according to claim 1, wherein The die bonding condition testing device further comprises a shock absorption mechanism, and the force sensor is disposed on the shock absorption mechanism.

3. The die bonding condition testing apparatus according to claim 2, wherein The shock absorption mechanism is an air floating shock absorber.

4. The die bonding condition testing apparatus according to any one of claims 1 to 3, wherein The bearing mechanism is configured to bear a wafer platform, the wafer platform being located on a side of the test platform away from the force sensor, and the wafer platform being used to bear the wafer film.

5. The die bonding condition testing apparatus according to claim 4, wherein The die bonding condition testing device further comprises an optical detection mechanism configured to perform positioning detection on the wafer.

6. The die bonding condition testing apparatus according to claim 4, wherein The die bonding condition testing device further comprises: a housing covering at least the force sensor and the wafer platform.

7. The die bonding condition testing apparatus according to claim 4, wherein The die bonding condition testing device further comprises: a first moving mechanism configured to fixedly support the force sensor, or the first moving mechanism being configured to adjust the horizontal height of the force sensor.

8. The die bonding condition testing apparatus according to claim 4, wherein The bearing mechanism is configured to fixedly support the wafer platform, or the bearing mechanism being configured to adjust the horizontal height and / or horizontal position of the wafer platform.

9. The die bonding condition testing apparatus according to claim 4, wherein The die bonding condition testing device further comprises a needle die bonding mechanism, and the needle die bonding mechanism comprises the probe.

10. The die bonding condition testing apparatus according to claim 9, wherein The die bonding condition testing device further comprises: a third moving mechanism configured to fixedly support the needle die bonding mechanism, or the third moving mechanism being configured to adjust the horizontal height and horizontal position of the needle die bonding mechanism.

11. A test method for a die bonding condition test apparatus according to any one of claims 1 to 10, wherein The test method comprises: placing an adhesive; loading a wafer film; and performing a die bonding operation to obtain a test result of a force sensor; the adhesive is a flux or an auxiliary adhesive; when the adhesive is a flux and the bonding strength between the wafer and the flux is less than the bonding strength between the wafer and the die bonding film, the bonding strength between the wafer and the flux is obtained according to the test result; When the adhesive is an auxiliary adhesive, and the bonding strength between the wafer and the auxiliary adhesive is greater than the bonding strength between the wafer and the die-bonding film after debonding, the bonding strength between the wafer and the die-bonding film after debonding is obtained according to the test result.

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