High thermal conductive composite metal material, preparation method and application thereof

Abstract

The present application belongs to the technical field of aluminum-silicon-based metal materials, and particularly relates to a high-thermal-conductivity composite metal material, a preparation method thereof and an application thereof. The material is suitable for heat dissipation requirements of 5G communication equipment, electric vehicle power batteries, spacecraft thermal control systems and the like. The material is composed of nanocrystalline aluminum alloy matrix of aluminum, magnesium, silicon, scandium and other metal elements, and does not have problems such as anisotropy, obvious thermal response hysteresis, obvious poor cycle stability, boiling critical phenomenon and the like. Meanwhile, the nanocrystalline aluminum alloy matrix contains a high-density dislocation grid, which further improves the overall heat transfer efficiency. In addition, the nanocrystalline aluminum alloy matrix is formed with microchannels, and the internal liquid metal is injected as a phase change working medium, so as to realize the synergistic effect of active heat transport and passive heat conduction. The catalytic layer is used to promote the evaporation-condensation cycle of the liquid metal, to strengthen the phase change heat transfer of the liquid metal working medium, to enhance the interface bonding and wettability, to improve the adhesion of the liquid metal and the channel wall, and to inhibit the oxidation and side reaction of the phase change working medium.

Description

Technical Field

[0001] This invention belongs to the field of aluminum-silicon based metal materials technology, specifically relating to a high thermal conductivity composite metal material and its preparation method and application. This material is particularly suitable for heat dissipation requirements under extreme conditions such as 5G communication equipment, electric vehicle power batteries, and spacecraft thermal control systems. Background Technology

[0002] With the rapid development of technologies such as 5G communication, artificial intelligence chips, and high-power LEDs, traditional heat dissipation materials are struggling to meet the ever-increasing heat dissipation demands. Currently, mainstream heat dissipation materials on the market face the following technical bottlenecks:

[0003] 1) Traditional metal heat sinks (such as pure aluminum and copper): thermal conductivity is close to the theoretical limit (pure aluminum 237W / m·K, pure copper 401W / m·K).

[0004] 2) Graphene-reinforced composite materials: exhibit significant anisotropy, with the Z-axis thermal conductivity being only 30% of that in the XY direction;

[0005] 3) Phase change materials: They suffer from significant thermal response hysteresis and poor cycling stability;

[0006] 4) Microchannel liquid cooling system: Boiling critical phenomenon is prone to occur under high heat flux density (>100W / cm²).

[0007] There is an urgent need for a next-generation thermal management material based on metal materials that, while maintaining excellent mechanical strength (structural function), integrates an active heat dissipation mechanism through a revolutionary internal structural design, thereby breaking through the limits of traditional passive heat conduction theory of metals to meet the challenges of extreme high heat flux density.

[0008] It should be noted that the information disclosed in this background section is only for understanding the background technology of the present application concept, and therefore, the above description is not considered to constitute prior art information. Summary of the Invention

[0009] This disclosure provides at least one high thermal conductivity composite metal material, its preparation method, and its application.

[0010] In a first aspect, embodiments of this disclosure provide a high thermal conductivity composite metal material, comprising: a nanocrystalline aluminum alloy matrix with an Al-Mg-Si-Sc composition, the surface of which contains a dislocation mesh; microchannels formed within the nanocrystalline aluminum alloy matrix and three-dimensionally interconnected to form a microchannel network; a catalyst layer with a TiO2 composition, attached to the inner wall of the microchannels; a liquid metal working fluid with a Ga-In-Sn-Al alloy composition, filling the microchannels; and an Ag nanocone array located on the surface of the dislocation mesh; wherein the nanocrystalline aluminum alloy matrix comprises, by mass percentage: 5-7% Mg, 0.5-1.5% Si, 0.3-0.7% Sc, with the remainder being Al; and the dislocation mesh is formed by a pulsed electromagnetic field with a density of 10. 12 / m 2 The microchannel is loaded with SiC nanowires and / or diamond nanoparticles, the volume of which is 0.5-5% of the volume of the microchannel; the diameter of the SiC nanowires is 20-50 nm and the aspect ratio is greater than 100.

[0011] In one optional embodiment, the microchannel diameter is 50-300 μm; the thickness of the catalyst layer is 1-5 nm; and the Ag nanocone array has a cone height of 200-800 nm, a spacing of 100-300 nm, and a surface roughness Ra of 50-200 nm.

[0012] In one alternative embodiment, the Ga-In-Sn-Al alloy is prepared by the following method:

[0013] Step 1: Take spherical aluminum powder with a particle size of 50-100nm and a purity higher than 99.99%, immerse it in an ethanol solution of 0.5mol / L citric acid, sonicate for 8-12 minutes and then separate the solid and liquid. Wash the solid material several times with ethanol.

[0014] Step 2: Transfer the solid material after ethanol washing to a 0.1% stearic acid acetone solution, stir at 35-45℃ for 20-40 min, separate the solid and liquid and dry to obtain pretreated aluminum powder;

[0015] Step 3: Heat the Ga-In-Sn alloy to 140-160℃ in an argon atmosphere, and introduce argon gas mixed with 5% hydrogen into the Ga-In-Sn alloy. Bubble for 20-40 minutes, let it stand, remove the surface oxide slag, transfer it to a vacuum furnace for vacuum degassing, and obtain the pretreated Ga-In-Sn alloy.

[0016] Step 4: The pretreated aluminum powder obtained in Step 2 and the pretreated Ga-In-Sn alloy obtained in Step 3 are transferred to a ball mill at a mass ratio of 1:(49-99) and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0017] Step 5: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 20-40 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0018] In one optional embodiment, when the SiC nanowires and / or the diamond nanoparticles are loaded, a 1 vol% SiC nanowire ethanol suspension and / or 0.5 wt% diamond nanoparticles are prepared, and the suspension is infiltrated into the microchannels by vacuum suction. After drying at 80°C for 2 hours, the suspension is cured, thereby achieving the loading of SiC nanowires and / or diamond nanoparticles.

[0019] Secondly, this disclosure also provides a method for preparing a high thermal conductivity composite metal material, comprising the following steps:

[0020] S1: Nanocrystalline powder was prepared by gas atomization with a cooling rate of 10. 6 K / s, and then using pulsed electromagnetic field treatment, the nanocrystalline powder contains a dislocation network, and the nanocrystalline aluminum alloy matrix is ​​formed by SLM technology and microchannels are formed therein.

[0021] S2: Femtosecond laser processing of the inner surface of microchannels;

[0022] S3: A TiO2 catalytic layer is grown on the inner wall of the microchannel using atomic layer deposition.

[0023] S4: Vacuum-filled liquid metal working fluid;

[0024] S5: Ag nanocone array fabricated by magnetron sputtering.

[0025] In one optional implementation, the method includes: S1, where the SLM employs a checkerboard scanning strategy with a scanning speed of 700-900 mm / s, a laser power of 350-400 W, and a layer thickness of 20-50 μm; S2, where the laser wavelength is 800 nm and the pulse width is 100 fs; S3, where the atomic layer deposition method uses a deposition temperature of 150-250 °C, with TiCl4 and H2O as precursors, a laser power of 380 W, and a layer thickness of 35 μm; S4, where the vacuum infusion pressure is 0.2-0.5 MPa; and S4, where the magnetron sputtering working gas pressure is 0.8 Pa and the power is 200 W.

[0026] Thirdly, this disclosure also provides an application of the high thermal conductivity composite metal material described above in 5G communication equipment, electric vehicle power batteries, and spacecraft thermal control systems.

[0027] The beneficial effects of this invention are as follows: the high thermal conductivity composite metal material, its preparation method, and its application utilize aluminum, magnesium, silicon, and scandium elements to form a nanocrystalline aluminum alloy matrix. Since this matrix primarily uses metallic elements, it avoids problems such as anisotropy, significant thermal response hysteresis, poor cycle stability, and boiling criticality. Simultaneously, the nanocrystalline aluminum alloy matrix contains a high-density dislocation network, further enhancing the overall heat transfer efficiency. Furthermore, the nanocrystalline aluminum alloy matrix contains hollow microchannels filled with liquid metal as a phase change working fluid, thereby achieving a synergistic effect of active heat transport and passive heat conduction. The catalyst layer promotes the evaporation-condensation cycle of the liquid metal, strengthens the phase change heat transfer of the liquid metal working fluid, enhances interfacial bonding and wettability, improves the adhesion of the liquid metal to the channel walls, and inhibits oxidation and side reactions of the phase change working fluid. The core advantage of this invention lies in its leapfrog improvement in heat dissipation capacity achieved through the synergistic effect of multiple components: the nanocrystalline aluminum alloy matrix serves as a high-strength framework, achieving efficient passive heat conduction through its internal dislocation network, while the microchannel network constructed within it and the liquid metal working fluid form a "heat highway" for active heat transport; the combination of these two components forms a dual heat dissipation mechanism of passive diffusion and active pumping. Based on this, the TiO2 catalyst layer optimizes interface wettability and inhibits oxidation reactions, ensuring the long-term stability of the liquid metal circuit, while the Ag nanocone array on the surface significantly reduces contact thermal resistance, ensuring that heat can be instantly captured. Ultimately, these components together constitute a complete, efficient, and stable thermal management system from the heat source interface to final heat dissipation.

[0028] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained in accordance with the structures particularly pointed out in the description, claims and drawings.

[0029] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0030] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of a high thermal conductivity composite metal material provided in an embodiment of the present disclosure;

[0032] Figure 2 for Figure 1 Enlarged diagram of A in the middle;

[0033] Figure 3 This is a schematic diagram of the internal structure of a microchannel;

[0034] Figure 4 SEM image of a dislocation mesh;

[0035] Figure 5 This is a SEM image of an Ag nanocone array.

[0036] In the picture:

[0037] 1. Nanocrystalline aluminum alloy substrate; 2. Dislocation mesh; 3. Microchannel; 4. Catalyst layer; 5. Liquid metal working fluid.

[0038] 6. Ag nanocone array; 7. SiC nanowires; 8. Diamond nanoparticles. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0040] Glossary

[0041] like:

[0042] SLM: Selective laser melting;

[0043] ALD: Atomic layer deposition.

[0044] Research has found that existing technologies and traditional heat dissipation materials (such as traditional metal radiators, graphene-reinforced composite materials, phase change materials, and microchannel liquid cooling systems) are no longer sufficient to meet the growing heat dissipation demands.

[0045] Based on the above research, this disclosure provides a high thermal conductivity composite metal material, its preparation method, and its application. A nanocrystalline aluminum alloy matrix is ​​constructed using aluminum, magnesium, silicon, and scandium elements. Since this matrix primarily uses metallic elements, it avoids problems such as anisotropy, significant thermal response hysteresis, poor cycle stability, and boiling criticality. Simultaneously, the nanocrystalline aluminum alloy matrix contains a high-density dislocation network, further improving the overall heat transfer efficiency. Furthermore, the nanocrystalline aluminum alloy matrix contains hollow microchannels filled with liquid metal as a phase change working fluid, thereby achieving a synergistic effect of active heat transport and passive heat conduction. It is particularly suitable for heat dissipation requirements under extreme conditions such as 5G communication equipment, electric vehicle power batteries, and spacecraft thermal control systems.

[0046] The shortcomings of the above solutions are the result of the inventor's practical experience and careful research. Therefore, the discovery process of the above problems and the solutions proposed in this disclosure should be considered as the inventor's contribution to this disclosure.

[0047] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0048] The following detailed description of some embodiments of the present invention is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0049] Process Description:

[0050] 1. Gas atomization preparation process:

[0051] During gas atomization, the cooling rate is controlled to approximately 10. 6 K / s is crucial for obtaining nanocrystalline structures. To achieve this cooling rate, the following specific process parameters are used:

[0052] Atomizing gas: High-purity nitrogen (purity ≥ 99.999%);

[0053] Gas pressure: 6–8 MPa;

[0054] Melt superheat: 200–250℃, above the liquidus temperature;

[0055] Nozzle diameter: 2–3 mm;

[0056] Atomizing tower height: 3–4m;

[0057] Melt flow rate: 2–4 kg / min;

[0058] Under these conditions, the alloy droplets rapidly solidify during flight, forming a nanocrystalline structure with an average grain size of 50–150 nm.

[0059] 2. Pulse electromagnetic field treatment process

[0060] Pulsed electromagnetic field treatment is used to introduce a high-density dislocation network (≥10) in an existing nanocrystalline matrix. 12 / m 2 The specific processing parameters are as follows:

[0061] Pulsed magnetic field strength: 2–4 T;

[0062] Pulse frequency: 10–50 Hz;

[0063] Pulse width: 100–500 μs;

[0064] Processing temperature: 200–300℃ (below the alloy recrystallization temperature);

[0065] Processing time: 30–120 seconds;

[0066] Magnetic field direction: perpendicular to the main heat dissipation direction of the sample, in order to optimize the enhancement effect of dislocation mesh on heat conduction.

[0067] Under the above parameters, the strong Lorentz force induced by the pulsed electromagnetic field, combined with thermal stress, promotes the proliferation and entanglement of dislocations at the grain boundaries, forming a continuous and uniform three-dimensional dislocation network.

[0068] Example 1: This example provides a high thermal conductivity composite metal material and its preparation method, including the following steps:

[0069] S1: Nanocrystalline aluminum alloy matrix Al-5.7Mg-0.8Si-0.4Sc (wt%) was prepared by gas atomization. Specific atomization parameters were: nitrogen pressure 7 MPa, melt superheat 230℃, nozzle diameter 2.5 mm, melt flow rate 3 kg / min, atomization tower height 3.5 m, and cooling rate approximately 1.2 × 10⁻⁶. 6 Nanocrystalline powder with an average grain size of approximately 80 nm was obtained by applying K / s pressure. The powder was then cold isostatically pressed at 400 MPa and subsequently sintered at 500 °C under argon protection for 2 h to obtain a dense matrix. Next, a pulsed electromagnetic field treatment was applied at 250 °C with a magnetic field strength of 3 T, a frequency of 30 Hz, a pulse width of 200 μs, and a treatment time of 60 s. After this treatment, a uniformly distributed dislocation network 2 was formed on the matrix surface, with a dislocation density of approximately 3.5 × 10⁻⁶. 12  / m 2 It should be noted that dislocation grid 2 is an irregular crisscross pattern. Figure 1The diagram is for illustrative purposes only. The nanocrystalline aluminum alloy substrate 1 contains 5.7% magnesium, 0.8% silicon, and 0.4% scandium, with the remainder being aluminum. Microchannels 3 are formed within the nanocrystalline aluminum alloy substrate using SLM technology. The SLM technology employs a checkerboard scanning strategy with a scanning speed of 800 mm / s, a laser power of 380 W, a layer thickness of 30 μm, and a microchannel diameter of 200 μm. SiC nanowires 7 are composited within the microchannels 3, with a volume of 2.5% of the microchannel volume. The SiC nanowires 7 have a diameter of 35 nm and an aspect ratio of 100. To load the SiC nanowires 7, a 1 vol% SiC nanowire ethanol suspension is prepared, and the suspension is infiltrated into the microchannels using a vacuum suction method. After drying at 80°C for 2 hours, the suspension is cured, thus achieving SiC nanowire loading.

[0070] S2: Femtosecond laser processing of the inner surface of microchannels, with a laser wavelength of 800nm ​​and a pulse width of 100fs; under these conditions, the femtosecond laser has virtually no effect on the processing of SiC nanowire loads;

[0071] S3: A TiO2 catalyst layer 4 with a thickness of 3 nm was grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method was 200℃, the precursors were TiCl4 and H2O, the laser power was 380W, and the layer thickness was 35μm.

[0072] S4: Vacuum-filled liquid metal working medium 5, filling pressure is 0.3MPa;

[0073] S5: Ag nanocone array 6 was prepared by magnetron sputtering. The cone height of Ag nanocone array 6 was 500 nm, the spacing was 200 nm, the working pressure was 0.8 Pa, and the power was 200 W. The surface roughness Ra of Ag nanocone array 6 was 150 nm.

[0074] Among them, the liquid metal working medium 5 is a Ga-In-Sn-Al alloy, and is prepared by the following method:

[0075] Step 1: Take spherical aluminum powder with a particle size of 80nm and a purity higher than 99.99%, immerse it in an ethanol solution of 0.5mol / L citric acid, sonicate for 10min, and then separate the solid and liquid. Wash the solid material several times with ethanol.

[0076] Step 2: Transfer the solid material after ethanol washing to a 0.1% stearic acid acetone solution, stir at 40°C for 30 min, separate the solid and liquid, and dry to obtain pretreated aluminum powder;

[0077] Step 3: Heat the Ga-In-Sn alloy (commercially available Galinstan alloy) to 150°C in an argon atmosphere, and introduce argon gas mixed with 5% hydrogen into the Ga-In-Sn alloy. Bubble for 30 minutes, let it stand, remove the surface oxide slag, and transfer it to a vacuum furnace for vacuum degassing to obtain the pretreated Ga-In-Sn alloy.

[0078] Step 4: The pretreated aluminum powder obtained in Step 2 and the pretreated Ga-In-Sn alloy obtained in Step 3 are transferred to a ball mill at a mass ratio of 1:74 and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0079] Step 5: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 30 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0080] The thermal conductivity of the high thermal conductivity composite metal material was measured to be 328 W / m•K.

[0081] Example 2: This example provides a high thermal conductivity composite metal material and its preparation method, including the following steps:

[0082] S1: Nanocrystalline aluminum alloy matrix Al-6.3Mg-1.1Si-0.5Sc (wt%) was prepared by gas atomization. Specific atomization parameters were: nitrogen pressure 8 MPa, melt superheat 237℃, nozzle diameter 2.8 mm, melt flow rate 3.5 kg / min, atomization tower height 4 m, and cooling rate approximately 1.5 × 10⁻⁶. 6 Nanocrystalline powder with an average grain size of approximately 70 nm was obtained by applying K / s. The powder was cold isostatically pressed at 450 MPa and then sintered at 520 °C under argon protection for 2.5 h to obtain a dense matrix. Further treatment with a pulsed electromagnetic field was then performed, applying a pulsed magnetic field at 280 °C with a magnetic field strength of 3.5 T, a frequency of 40 Hz, a pulse width of 300 μs, and a treatment time of 90 s. After this treatment, a uniformly distributed dislocation network 2 was formed on the matrix surface, with a dislocation density of approximately 4.2 × 10⁻⁶. 12  / m 2 It should be noted that dislocation grid 2 is an irregular crisscross pattern. Figure 1The diagram is for illustrative purposes only. The nanocrystalline aluminum alloy matrix contains 6.3% magnesium, 1.1% silicon, and 0.5% scandium, with the remainder being aluminum. The nanocrystalline aluminum alloy matrix is ​​shaped using SLM technology to form microchannels 3. The SLM technology employs a checkerboard scanning strategy with a scanning speed of 900 mm / s, a laser power of 400 W, and a layer thickness of 40 μm. The microchannel 3 has a diameter of 300 μm and contains diamond nanoparticles 8, whose volume is 5% of the microchannel 3's volume. The diamond nanoparticles 8 have a diameter of 50 nm and an aspect ratio of 100. To load the diamond nanoparticles 8, a 0.5 wt% diamond nanoparticle ethanol suspension is prepared, and the suspension is infiltrated into the microchannel 3 using a vacuum suction method. After drying at 80°C for 2 hours, the suspension is cured, thus achieving the loading of the diamond nanoparticles 8.

[0083] S2: Femtosecond laser processing of the inner surface of microchannel 3, with a laser wavelength of 800nm ​​and a pulse width of 100fs; under these conditions, the femtosecond laser has virtually no effect on the processing of SiC nanowire loads;

[0084] S3: A TiO2 catalyst layer 4 with a thickness of 5 nm was grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method was 250℃, the precursors were TiCl4 and H2O, the laser power was 400W, and the layer thickness was 50μm.

[0085] S4: Vacuum-filled liquid metal working medium 5, filling pressure is 0.5MPa;

[0086] S5: Ag nanocone array 6 was prepared by magnetron sputtering. The cone height of Ag nanocone array 6 was 800 nm, the spacing was 300 nm, the working pressure was 1 Pa, and the power was 250 W. The surface roughness Ra of Ag nanocone array 6 was 200 nm.

[0087] Among them, the liquid metal working medium 5 is a Ga-In-Sn-Al alloy, and is prepared by the following method:

[0088] Step 1: Take spherical aluminum powder with a particle size of 100nm and a purity higher than 99.99%, immerse it in an ethanol solution of 0.5mol / L citric acid, sonicate for 12min, and then separate the solid and liquid. Wash the solid material several times with ethanol.

[0089] Step 2: Transfer the solid material after ethanol washing to a 0.1% stearic acid acetone solution, stir at 45°C for 40 min, separate the solid and liquid and dry to obtain pretreated aluminum powder;

[0090] Step 3: Heat the Ga-In-Sn alloy (commercially available Galinstan alloy) to 160°C in an argon atmosphere, and introduce argon gas mixed with 5% hydrogen into the Ga-In-Sn alloy. Bubble for 40 minutes, let it stand, remove the surface oxide slag, and transfer it to a vacuum furnace for vacuum degassing to obtain the pretreated Ga-In-Sn alloy.

[0091] Step 4: The pretreated aluminum powder obtained in Step 2 and the pretreated Ga-In-Sn alloy obtained in Step 3 are transferred to a ball mill at a mass ratio of 1:99 and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0092] Step 5: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 40 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0093] The thermal conductivity of the high thermal conductivity composite metal material was measured to be 315 W / m•K.

[0094] Example 3: This example provides a high thermal conductivity composite metal material and its preparation method, including the following steps:

[0095] Step S1: Nanocrystalline aluminum alloy matrix Al-5Mg-0.5Si-0.4Sc (wt%) was prepared by gas atomization. Specific atomization parameters were: nitrogen pressure 6 MPa, melt superheat 200℃, nozzle diameter 2.2 mm, atomization tower height 3 m, melt flow rate 2.5 kg / min, and cooling rate approximately 1.1 × 10⁻⁶. 6 K / s was used to obtain nanocrystalline powder with an average grain size of approximately 100 nm. Then, pulsed electromagnetic field treatment was applied at 220 °C with a magnetic field strength of 2.5 T, a frequency of 20 Hz, a pulse width of 150 μs, and a treatment time of 45 s. After this treatment, a uniformly distributed dislocation network 2 was formed on the substrate surface, with a dislocation density of approximately 2.8 × 10⁻⁶. 12 / m 2 It should be noted that dislocation grid 2 is an irregular crisscross pattern. Figure 1This is for illustrative purposes only. The nanocrystalline aluminum alloy matrix 1 contains 5% magnesium, 0.5% silicon, and 0.4% scandium, with the remainder being aluminum. Microchannels 3 are formed within the nanocrystalline aluminum alloy matrix using SLM technology. The SLM technology employs a checkerboard scanning strategy with a scanning speed of 700 mm / s, a laser power of 350 W, a layer thickness of 20 μm, and a microchannel diameter of 50 μm. The microchannels 3 contain SiC nanowires 7 and diamond nanoparticles 8, with a volume of 0.5% of the microchannel volume. The SiC nanowires 7 and diamond nanoparticles 8 have a diameter of 20 nm and an aspect ratio of 100. The loading of SiC nanowires 7 and diamond nanoparticles 8 is achieved by preparing a 1 vol% SiC nanowire ethanol suspension and a 0.5 wt% diamond nanoparticle ethanol suspension, using a vacuum suction method to allow the suspensions to penetrate into the microchannels, and then curing them after drying at 80°C for 2 hours.

[0096] Step S2: Femtosecond laser is used to process the inner surface of microchannel 3. The laser wavelength is 800 nm and the pulse width is 100 fs. Under these conditions, the femtosecond laser has virtually no effect on the processing of SiC nanowire loads.

[0097] Step S3: A TiO2 catalyst layer 4 with a thickness of 1 nm is grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method is 150℃, the precursors are TiCl4 and H2O, the laser power is 350W, and the layer thickness is 20μm.

[0098] Step S4: Vacuum inject liquid metal working medium 5 at an injection pressure of 0.2 MPa;

[0099] Step S5: Ag nanocone array 6 is prepared by magnetron sputtering. The cone height of Ag nanocone array 6 is 200 nm, the spacing is 100 nm, the working pressure is 0.5 Pa, and the power is 150 W. The surface roughness Ra of Ag nanocone array is 50 nm.

[0100] Among them, the liquid metal working medium 5 is a Ga-In-Sn-Al alloy, and is prepared by the following method:

[0101] Step 1: Take spherical aluminum powder with a particle size of 50nm and a purity higher than 99.99%, immerse it in an ethanol solution of 0.5mol / L citric acid, sonicate for 8 minutes and then separate the solid and liquid. Wash the solid material several times with ethanol.

[0102] Step 2: Transfer the solid material after ethanol washing to a 0.1% stearic acid acetone solution, stir at 35°C for 20 min, separate the solid and liquid and dry to obtain pretreated aluminum powder;

[0103] Step 3: Heat the Ga-In-Sn alloy (commercially available Galinstan alloy) to 140°C in an argon atmosphere, and introduce argon gas mixed with 5% hydrogen into the Ga-In-Sn alloy. Bubble for 20 minutes, let it stand, remove the surface oxide slag, and transfer it to a vacuum furnace for vacuum degassing to obtain the pretreated Ga-In-Sn alloy.

[0104] Step 4: The pretreated aluminum powder obtained in Step 2 and the pretreated Ga-In-Sn alloy obtained in Step 3 are transferred to a ball mill at a mass ratio of 1:49 and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0105] Step 5: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 20 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0106] The thermal conductivity of the high thermal conductivity composite metal material was measured to be 302 W / m•K.

[0107] Comparative Example 1

[0108] This comparative example provides a composite metal material and its preparation method, including the following steps:

[0109] Step S1: Nanocrystalline aluminum alloy substrate is prepared by gas atomization method with a cooling rate of 10. 6 K / s, and then treated with a pulsed electromagnetic field, so that the nanocrystalline aluminum alloy matrix contains a density of 10 12 / m 2 The above dislocation grid has a magnesium content of 6%, a silicon content of 1%, a scandium content of 0.5%, and the balance being aluminum in the nanocrystalline aluminum alloy matrix.

[0110] Step S2: Ag nanocone array is prepared by magnetron sputtering. The Ag nanocone array has a cone height of 500 nm, a spacing of 200 nm, a working pressure of 0.8 Pa, and a power of 200 W. The surface roughness Ra of the Ag nanocone array is 150 nm.

[0111] The thermal conductivity of the prepared composite metal material was measured to be 224 W / m•K.

[0112] Comparative Example 2

[0113] This comparative example provides a composite metal material and its preparation method, including the following steps:

[0114] Step S1: Nanocrystalline aluminum alloy substrate is prepared by gas atomization method with a cooling rate of 10. 6 K / s, and then treated with a pulsed electromagnetic field, so that the nanocrystalline aluminum alloy matrix contains a density of 1012 / m 2 The above dislocation mesh is constructed from a nanocrystalline aluminum alloy matrix containing 6% magnesium, 1% silicon, and 0.5% scandium, with the remainder being aluminum. The nanocrystalline aluminum alloy matrix is ​​shaped using SLM technology to form microchannels with a diameter of 200 μm. SiC nanowires, comprising 2.5% of the microchannel volume, are embedded within these microchannels. The SiC nanowires have a diameter of 35 nm and an aspect ratio of 100. A checkerboard scanning strategy is employed in the SLM technology at a scanning speed of 800 mm / s.

[0115] Step S2: Femtosecond laser processing of the inner surface of the microchannel, with a laser wavelength of 800nm ​​and a pulse width of 100fs;

[0116] Step S3: A TiO2 catalyst layer with a thickness of 3 nm is grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method is 200℃, the precursors are TiCl4 and H2O, the laser power is 380W, and the layer thickness is 35μm.

[0117] Step S4: Vacuum injection of liquid metal working fluid at an injection pressure of 0.3 MPa;

[0118] Step S5: Ag nanocone array is prepared by magnetron sputtering. The Ag nanocone array has a cone height of 500 nm, a spacing of 200 nm, a working pressure of 0.8 Pa, and a power of 200 W. The surface roughness Ra of the Ag nanocone array is 150 nm.

[0119] The liquid metal working medium is a Ga-In-Sn alloy (commercially available Galinstan alloy).

[0120] The thermal conductivity of the prepared composite metal material was measured to be 253 W / m•K.

[0121] Comparative Example 3

[0122] This comparative example provides a composite metal material and its preparation method, including the following steps:

[0123] Step S1: Nanocrystalline aluminum alloy substrate is prepared by gas atomization method with a cooling rate of 10. 6 K / s, and then treated with a pulsed electromagnetic field, so that the nanocrystalline aluminum alloy matrix contains a density of 10 12 / m 2The above dislocation mesh is constructed from a nanocrystalline aluminum alloy matrix containing 6% magnesium, 1% silicon, and 0.5% scandium, with the remainder being aluminum. The nanocrystalline aluminum alloy matrix is ​​shaped using SLM technology to form microchannels with a diameter of 200 μm. SiC nanowires, comprising 2.5% of the microchannel volume, are embedded within these microchannels. The SiC nanowires have a diameter of 35 nm and an aspect ratio of 100. A checkerboard scanning strategy is employed in the SLM technology at a scanning speed of 800 mm / s.

[0124] Step S2: Femtosecond laser processing of the inner surface of the microchannel, with a laser wavelength of 800nm ​​and a pulse width of 100fs;

[0125] Step S3: A TiO2 catalyst layer with a thickness of 3 nm is grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method is 200℃, the precursors are TiCl4 and H2O, the laser power is 380W, and the layer thickness is 35μm.

[0126] Step S4: Vacuum injection of liquid metal working fluid at an injection pressure of 0.3 MPa;

[0127] Step S5: Ag nanocone array is prepared by magnetron sputtering. The Ag nanocone array has a cone height of 500 nm, a spacing of 200 nm, a working pressure of 0.8 Pa, and a power of 200 W. The surface roughness Ra of the Ag nanocone array is 150 nm.

[0128] The liquid metal working medium is a Ga-In-Sn-Al alloy, and it is prepared by the following method:

[0129] Step 1: Take spherical aluminum powder with a particle size of 80nm and a purity higher than 99.99%;

[0130] Step 2: Heat the Ga-In-Sn alloy (commercially available Galinstan alloy) to 150°C in an argon atmosphere, and introduce argon gas mixed with 5% hydrogen into the Ga-In-Sn alloy. Bubble for 30 minutes, let it stand, remove the surface oxide slag, and transfer it to a vacuum furnace for vacuum degassing to obtain the pretreated Ga-In-Sn alloy.

[0131] Step 3: The spherical aluminum powder from Step 1 and the pretreated Ga-In-Sn alloy obtained in Step 2 are transferred to a ball mill at a mass ratio of 1:74 and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0132] Step 4: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 30 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0133] The thermal conductivity of the prepared composite metal material was measured to be 244 W / m•K.

[0134] Comparative Example 4

[0135] This comparative example provides a composite metal material and its preparation method, including the following steps:

[0136] Step S1: Nanocrystalline aluminum alloy substrate is prepared by gas atomization method with a cooling rate of 10. 6 K / s, and then treated with a pulsed electromagnetic field, so that the nanocrystalline aluminum alloy matrix contains a density of 10 12 / m 2 The above dislocation mesh is constructed from a nanocrystalline aluminum alloy matrix containing 6% magnesium, 1% silicon, and 0.5% scandium, with the remainder being aluminum. The nanocrystalline aluminum alloy matrix is ​​shaped using SLM technology to form microchannels with a diameter of 200 μm. SiC nanowires, comprising 2.5% of the microchannel volume, are embedded within these microchannels. The SiC nanowires have a diameter of 35 nm and an aspect ratio of 100. A checkerboard scanning strategy is employed in the SLM technology at a scanning speed of 800 mm / s.

[0137] Step S2: Femtosecond laser processing of the inner surface of the microchannel, with a laser wavelength of 800nm ​​and a pulse width of 100fs;

[0138] Step S3: A TiO2 catalyst layer with a thickness of 3 nm is grown on the inner wall of the microchannel using atomic layer deposition. The deposition temperature in the atomic layer deposition method is 200℃, the precursors are TiCl4 and H2O, the laser power is 380W, and the layer thickness is 35μm.

[0139] Step S4: Vacuum injection of liquid metal working fluid at an injection pressure of 0.3 MPa;

[0140] Step S5: Ag nanocone array is prepared by magnetron sputtering. The Ag nanocone array has a cone height of 500 nm, a spacing of 200 nm, a working pressure of 0.8 Pa, and a power of 200 W. The surface roughness Ra of the Ag nanocone array is 150 nm.

[0141] The liquid metal working medium is a Ga-In-Sn-Al alloy, and it is prepared by the following method:

[0142] Step 1: Take spherical aluminum powder with a particle size of 80nm and a purity higher than 99.99%, immerse it in an ethanol solution of 0.5mol / L citric acid, sonicate for 10min, and then separate the solid and liquid. Wash the solid material several times with ethanol.

[0143] Step 2: Transfer the solid material after ethanol washing to a 0.1% stearic acid acetone solution, stir at 40°C for 30 min, separate the solid and liquid, and dry to obtain pretreated aluminum powder;

[0144] Step 3: The pretreated aluminum powder obtained in Step 2 and Ga-In-Sn alloy (commercially available Galinstan alloy) are transferred to a ball mill at a mass ratio of 1:74 and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy.

[0145] Step 4: The pre-composite alloy is subjected to ultrasonic cavitation treatment in an argon atmosphere for 30 minutes. After treatment, it is transferred to a vacuum furnace and degassed under vacuum with magnetic stirring. It is then cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

[0146] The thermal conductivity of the high thermal conductivity composite metal material was measured to be 279 W / m•K.

[0147] In summary, the thermal conductivity of the high thermal conductivity composite metal materials prepared in Examples 1-3 under the complete procedure is significantly higher than that of the high thermal conductivity composite metal materials prepared in Comparative Examples 1-4 under the incomplete procedure.

[0148] In addition, this disclosure also provides at least one application of the above-mentioned high thermal conductivity composite metal material in 5G communication equipment, electric vehicle power batteries, and spacecraft thermal control systems.

[0149] Example 4: High-efficiency heat dissipation module for 5G base stations

[0150] Table 1: Core Performance Data

[0151]

[0152] Table 1 Test Description:

[0153] The test sample is a high thermal conductivity composite metal material prepared by the method of Example 1 of the present invention. During the preparation process, the nanocrystalline aluminum alloy substrate is formed into a heat sink with a size of 50mm×50mm×3mm using SLM technology.

[0154] Thermal conductivity: Tested according to ASTM E1461 Standard Test Method for Determination of Thermal Diffusivity of Solid Materials by Laser Flash Method.

[0155] Thermal resistance: The steady-state heat flow method is used to apply a constant heat flow between the constant-temperature heat source and the radiator interface, measure the temperature difference and calculate the thermal resistance.

[0156] Temperature uniformity (ΔT): The temperature of the heat dissipation surface was measured across the entire field using an infrared thermal imager at a heat flux density of 150 W / cm², and the difference between the highest and lowest temperatures was recorded.

[0157] Thermal cycling stability: The system was subjected to high and low temperature cycling from -40℃ to 120℃ according to GB / T 2423.22 Environmental testing - Part 2: Test N: Temperature change, with each cycle lasting 2 hours.

[0158] Operating temperature: Under full load at 28GHz, the chip junction temperature is monitored in real time using thermocouples. Industry standards typically maintain a temperature <85℃ to ensure long-term stable operation of the chip.

[0159] Salt spray corrosion: A 5% NaCl salt spray test was conducted according to Method 509.6 of MIL-STD-810G Environmental Engineering Considerations and Laboratory Testing.

[0160] in conclusion:

[0161] In the 5G base station AAU module, the chip junction temperature is reduced by 36% (compared to traditional solutions), and the initial performance is still maintained at 97.9% after 2000 thermal cycles.

[0162] Example 5: Heat sink for new energy vehicle battery packs

[0163] Table 2: Measured Performance Data

[0164]

[0165] Table 2 Test Description:

[0166] The test sample is a high thermal conductivity composite metal material prepared by the method of Example 2 of the present invention. During the preparation process, SLM technology is used to form a nanocrystalline aluminum alloy substrate into a heat sink with a size of 200mm×150mm×5mm.

[0167] Temperature difference control (ΔT): Under 100W / cm² heat flux density and 3C discharge conditions, multiple thermocouples are used to monitor the surface temperature distribution of the battery.

[0168] Weight density: The sample volume was measured by the water displacement method, and the density was calculated by weighing with an electronic balance.

[0169] Vibration reliability: Random vibration tests were conducted in accordance with GB / T 31467.3 Lithium-ion power battery packs and systems for electric vehicles - Part 3: Safety requirements and test methods.

[0170] Thermal conductivity (Z-axis): Tested along the thickness direction using the laser flash method (ASTM E1461).

[0171] Cycle life: Performed according to GB / T 31484 Requirements and test methods for cycle life of power batteries for electric vehicles, 1C charge and discharge cycle.

[0172] Rapid cooling performance: Under natural convection conditions, the time required for the heat sink to cool from 80°C to 40°C was recorded.

[0173] in conclusion:

[0174] The battery pack temperature difference is controlled at 2.7℃, which is 46% higher than the industry standard. While reducing weight by 37%, the thermal conductivity is increased by 50% (compared to graphene composite materials).

[0175] Example 6: Heat dissipation system for spacecraft phased array antennas

[0176] Table 3: Space Environment Validation Data

[0177]

[0178] Table 3 Test Description:

[0179] The test sample is a high thermal conductivity composite metal material prepared by the method of Example 3 of the present invention. During the preparation process, the nanocrystalline aluminum alloy substrate is formed into a heat sink of 300mm×300mm×4mm using SLM technology and then subjected to vacuum, radiation and microgravity adaptation treatment.

[0180] Vacuum thermal conductivity: at 10 -3 The test was conducted using the laser flare method in a vacuum environment of Pa.

[0181] Temperature cycling stability: Temperature cycling from -120°C to 150°C was performed according to standard methods.

[0182] Radiation resistance: Use The source was irradiated with a dose of 200 kGy, and the change in thermal conductivity before and after the test was performed.

[0183] Microgravity adaptability: through 10 -5 The drop tower test was used to observe the uniformity of liquid metal distribution in the microchannel.

[0184] Thermal response time: When a 100W step heat load is applied, the time it takes for the system to reach steady-state temperature is recorded.

[0185] On-orbit operating temperature: calculated based on a thermal simulation model, combined with solar radiation and Earth's albedo.

[0186] in conclusion:

[0187] Under strong radiation of 200 kGy, the performance degradation is only 2.3%, which meets the design requirements for radiation stability of thermal control materials (usually required to be <5%).

[0188] In this document, when an element or layer is referred to as “located,” “joined to,” “connected to,” “attached to,” or “coupled to” another element or layer, it may be directly located, joined, connected, attached to, or coupled to the other element or layer, or there may be intermediate elements or layers present. Conversely, when an element is referred to as “directly on another element or layer,” “directly joined to,” “directly connected to,” “directly attached to,” or “directly coupled to” another element or layer, there may be no intermediate elements or layers present. Other terms used to describe relationships between elements should be interpreted in a similar manner (e.g., “between” versus “directly between,” “adjacent” versus “directly adjacent,” etc.). As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items.

[0189] The terminology used herein is for the purpose of describing specific exemplary configurations only and is not intended to be limiting. As used herein, the singular articles “a,” “an,” and “the” may also be intended to include plural forms unless otherwise clearly stated herein. The terms “comprising,” “including,” and “having” are inclusive and thus specify the presence of features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein should not be construed as requiring them to be performed in the specific order discussed or shown, unless specifically identified as such. Additional or alternative steps may be employed.

[0190] As used herein, the phrases “in one embodiment,” “according to one embodiment,” “in some embodiments,” etc., generally refer to the fact that a particular feature, structure, or characteristic following the phrase can be included in at least one embodiment of this disclosure. Therefore, a particular feature, structure, or characteristic can be included in more than one embodiment of this disclosure, such that these phrases do not necessarily refer to the same embodiment. As used herein, the terms “example,” “exemplary,” etc., are used to “serve as an example, instance, or illustration.” Any implementation, aspect, or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. Rather, the use of the terms “example,” “exemplary,” etc., is intended to present concepts in a specific manner.

[0191] In the description of the embodiments of the present invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in the present invention based on the specific circumstances.

[0192] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence unless expressly indicated herein. Therefore, without departing from the teachings of the exemplary embodiments, the first element, component, region, layer, or segment discussed above may be referred to as a second element, component, region, layer, or segment.

[0193] Spatially relative terms, such as “inside,” “outside,” “below,” “below,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or feature illustrated in the figures and another element or feature. In addition to the orientations depicted in the figures, spatially relative terms may be intended to cover different orientations of the device in use or operation. For example, if the device in the figure is flipped, an element described as “below” or “below” other elements or features would be oriented as “above” other elements or features. Thus, the example term “below” can cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0194] In the above discussion, unless otherwise stated, when used to describe numerical values, the terms “about,” “approximately,” “basically,” etc., indicate a change of + / - 10% in that value.

[0195] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A high thermal conductivity composite metal material, characterized in that, include: The nanocrystalline aluminum alloy matrix (1) has an Al-Mg-Si-Sc composition and the surface of the nanocrystalline aluminum alloy matrix (1) contains a dislocation grid (2). Microchannels (3) are formed in the nanocrystalline aluminum alloy matrix and interconnected in three dimensions to form a microchannel network; The catalyst layer (4), composed of TiO2, is attached to the inner wall of the microchannel; Liquid metal working fluid (5), composed of Ga-In-Sn-Al alloy, is filled in the microchannel; Ag nanocone array (6) is located on the surface of the dislocation grid (2); The nanocrystalline aluminum alloy matrix (1) comprises, by mass percentage: 5-7% Mg, 0.5-1.5% Si, 0.3-0.7% Sc, and the remainder being Al; The dislocation grid (2) is formed by a pulsed electromagnetic field with a density of 10. 12 / m 2 above; The microchannel (3) is loaded with SiC nanowires (7) and / or diamond nanoparticles (8), the volume of which is 0.5-5% of the volume of the microchannel (3); The SiC nanowires (7) have a diameter of 20-50 nm and an aspect ratio greater than 100.

2. The high thermal conductivity composite metal material according to claim 1, characterized in that, The diameter of the microchannel (3) is 50-300 μm; The thickness of the catalyst layer (4) is 1-5 nm; The Ag nanocone array (6) has a cone height of 200-800 nm, a spacing of 100-300 nm between each Ag nanocone, and a surface roughness Ra of 50-200 nm.

3. The high thermal conductivity composite metal material according to claim 1, characterized in that, The Ga-In-Sn-Al alloy is prepared by the following method: Take spherical aluminum powder with a particle size of 50-100nm and a purity of more than 99.99%, immerse it in an ethanol solution containing citric acid, and then separate the solid and liquid components by sonication. The solid material is washed with ethanol at least once. The solid material after ethanol washing was transferred to stearic acid acetone solution, stirred, and after solid-liquid separation and drying, pretreated aluminum powder was obtained. The Ga-In-Sn alloy was heated to 140-160℃ in an argon atmosphere, and argon gas mixed with hydrogen was introduced into the Ga-In-Sn alloy. After bubbling and standing, the surface oxide slag was removed, and the alloy was transferred to a vacuum furnace for vacuum degassing to obtain a pretreated Ga-In-Sn alloy. Pretreated aluminum powder and pretreated Ga-In-Sn alloy were transferred to a ball mill at a mass ratio of 1:(49-99) and mechanically alloyed in an argon atmosphere to obtain a pre-composite alloy. The pre-composite alloy was subjected to ultrasonic cavitation treatment in an argon atmosphere. After treatment, it was transferred to a vacuum furnace for vacuum degassing under magnetic stirring and cooled to room temperature to obtain the Ga-In-Sn-Al alloy.

4. The high thermal conductivity composite metal material according to claim 1, characterized in that, When the SiC nanowires (7) and / or the diamond nanoparticles (8) are loaded, a 1 vol% SiC nanowire ethanol suspension and / or 0.5 wt% diamond nanoparticles are prepared, and the suspension is penetrated into the microchannel by vacuum suction. After drying, the suspension is solidified, thereby achieving the loading of SiC nanowires and / or diamond nanoparticles.

5. A method for preparing a high thermal conductivity composite metal material as described in any one of claims 1-4, characterized in that, Includes the following steps: Step S1: Nanocrystalline powder is prepared by gas atomization with a cooling rate of 10. 6 K / s, and then using pulsed electromagnetic field treatment, the nanocrystalline powder contains a dislocation network, and the nanocrystalline aluminum alloy matrix is ​​formed by SLM technology and microchannels are formed therein. Step S2: Femtosecond laser processing of the inner surface of the microchannel; Step S3: A TiO2 catalytic layer is grown on the inner wall of the microchannel using atomic layer deposition. Step S4: Vacuum injection of liquid metal working fluid; Step S5: Ag nanocone array is prepared by magnetron sputtering.

6. The method for preparing a high thermal conductivity composite metal material according to claim 5, characterized in that, include: In step S1, the SLM adopts a checkerboard scanning strategy with a scanning speed of 700-900 mm / s, a laser power of 350-400 W, and a layer thickness of 20-50 μm. In step S2, the laser wavelength is 800 nm and the pulse width is 100 fs; In step S3, the deposition temperature in atomic layer deposition is 150-250℃, the precursors are TiCl4 and H2O, the laser power is 380W, and the layer thickness is 35μm. In step S4, the vacuum injection pressure is 0.2-0.5 MPa; In step S5, the magnetron sputtering working gas pressure is 0.8 Pa and the power is 200 W.

7. The application of a high thermal conductivity composite metal material as described in any one of claims 1-4 in 5G communication equipment, electric vehicle power batteries, and spacecraft thermal control systems.

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