Micro electro mechanical system device, manufacturing method thereof and electronic device

Abstract

A micro-electro-mechanical system device and a manufacturing method thereof, and an electronic device, the micro-electro-mechanical system device comprising: a stack structure comprising a first electrode layer, an intermediate dielectric layer and a second electrode layer located on a first side of a substrate, the intermediate dielectric layer being located between the first electrode layer and the second electrode layer; the first cavity extends from the second side of the substrate, penetrates through the substrate and exposes the first electrode layer; the second cavity is located between the first electrode layer and the second electrode layer in the first direction and surrounded by the middle dielectric layer in the second direction parallel to the main surface of the substrate, and a part of the first electrode layer is located between the first cavity and the second cavity, physically separates the first cavity from the second cavity and serves as a vibrating diaphragm; the air leakage hole penetrates through the stacking structure in the first direction; and the sunken channel is sunken from the second side of the substrate to the first side and is communicated with the air leakage hole and the first cavity space. The MEMS device has improved device performance and reliability.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to the field of micro-electro-mechanical system devices and semiconductor technology, and in particular, to a micro-electro-mechanical system device and a manufacturing method thereof, and an electronic device. BACKGROUND

[0002] Micro-electro-mechanical system (MEMS) devices (e.g., a capacitive pressure sensor) are widely used in electronic devices such as microphones (i.e., microphones), electronic cigarettes, etc., which can convert the pressure acting on a diaphragm by a sound wave or a smoking action into an electrical signal, so as to sense the pressure through the output electrical signal. The arrangement of the diaphragm in the MEMS device can affect the device performance, and in addition, the diaphragm may, if deformed undesirably, adversely affect the device performance. SUMMARY

[0003] Embodiments of the present disclosure provide a micro-electro-mechanical system device and a manufacturing method thereof, and an electronic device, with improved device performance and reliability.

[0004] According to at least one embodiment of the present disclosure, a micro-electro-mechanical system device is provided, comprising: a stack structure comprising: a substrate and a first electrode layer, an intermediate dielectric layer, and a second electrode layer disposed on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is located between the first electrode layer and the second electrode layer; a first cavity extending through the substrate from a second side of the substrate opposite the first side and exposing the first electrode layer; a second cavity located between the first electrode layer and the second electrode layer in the first direction and surrounded by the intermediate dielectric layer in a second direction parallel to a major surface of the substrate, wherein a portion of the first electrode layer is located between the first cavity and the second cavity, physically spacing the first cavity and the second cavity apart and serving as a diaphragm; a vent hole extending through the stack structure in the first direction; and a recessed channel recessed from the second side of the substrate toward the first side and in spatial communication with the vent hole and the first cavity.

[0005] In the micro-electro-mechanical system device according to at least one embodiment of the present disclosure, a height of the recessed channel in the first direction is less than a thickness of the substrate in the first direction and / or a height of the first cavity in the first direction.

[0006] In the micro-electro-mechanical system device according to at least one embodiment of the present disclosure, in a direction parallel to a major surface of the substrate, the vent hole is offset from the first cavity and the second cavity, and the recessed channel is located between the vent hole and the first cavity.

[0007] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, one end of the vent hole is in communication with the recessed channel, and the other end of the vent hole is connected to the same environmental space as the second cavity.

[0008] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, a release hole is further included, the release hole penetrating through the second electrode layer and being in communication with the second cavity space, so that the second cavity is in communication with the environmental space through the release hole.

[0009] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, the vent hole includes a substrate via in the substrate, and the recessed channel connects the first cavity and the substrate via.

[0010] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, the vent hole includes an electrode via in the first electrode layer, the electrode via at least partially overlapping the substrate via in the first direction.

[0011] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, the recessed channel includes a plurality of channel portions extending in different directions parallel to a main surface of the substrate and being in communication with each other.

[0012] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, the recessed channel includes one or more arc-shaped channel portions or includes a zigzag channel.

[0013] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, the portion of the first electrode layer serving as the diaphragm has no hole.

[0014] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, an additional dielectric layer is further included between the first electrode layer and the substrate, and a passivation layer is further included on a side of the second electrode layer close to the first electrode layer and / or on a side of the second electrode layer away from the first electrode layer, wherein the vent hole penetrates through the passivation layer, the second electrode layer, the intermediate dielectric layer, the first electrode layer, the additional dielectric layer, and the substrate.

[0015] According to at least one embodiment of the present disclosure, in a micro-electro-mechanical system device, a first electrode pad is further included in electrical connection with the first electrode layer, and a second electrode pad is further included in electrical connection with the second electrode layer.

[0016] The electronic device includes the MEMS device and an attachment film attached to the second side of the substrate, wherein the recessed channel is located between the substrate and the attachment film, and the first cavity is in communication with the vent hole through the recessed channel.

[0017] The electronic device includes the MEMS device, a circuit substrate located on a side of the MEMS device close to the substrate, and an adhesive layer located between the MEMS device and the circuit substrate, and at least part of the adhesive layer is located in the recessed channel to isolate the first cavity and the vent hole.

[0018] According to the electronic device provided by at least one embodiment of the present disclosure, the adhesive layer is annular, the orthographic projection of the first cavity on the circuit substrate is surrounded by the orthographic projection of the adhesive layer on the circuit substrate, and the orthographic projection of the first cavity is located within the orthographic projection of the adhesive layer.

[0019] The manufacturing method of the MEMS device includes forming a stack structure including a substrate and a first electrode layer, an intermediate dielectric layer and a second electrode layer arranged on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is located between the first electrode layer and the second electrode layer; forming a first cavity extending through the substrate from a second side of the substrate opposite to the first side and exposing the first electrode layer; forming a second cavity located between the first electrode layer and the second electrode layer in the first direction and surrounded by the intermediate dielectric layer in a second direction parallel to a main surface of the substrate, wherein part of the first electrode layer is located between the first cavity and the second cavity, physically separates the first cavity and the second cavity, and serves as a diaphragm; forming a vent hole through the stack structure in the first direction; and forming a recessed channel on the second side of the substrate, the recessed channel is recessed from the second side of the substrate towards the first side, and in space communication with the vent hole and the first cavity.

[0020] A method for manufacturing a micro-electro-mechanical system device according to at least one embodiment of the present disclosure includes: providing a substrate; forming a first electrode layer on the first side of the substrate; removing a portion of the first electrode layer to form an electrode via in the first electrode layer; forming the intermediate dielectric layer on a side of the first electrode layer distal to the substrate, and the intermediate dielectric layer fills in the electrode via; forming the second electrode layer on a side of the intermediate dielectric layer distal to the substrate; performing a first removal process on the substrate to form the recessed channel on the second side of the substrate; performing a second removal process on the substrate to form a back cavity through the substrate, the back cavity serving as at least part of the first cavity, and a substrate via at least partially overlapping the electrode via in the first direction; and performing a dielectric release process to remove a first portion of the intermediate dielectric layer and form the second cavity, remove a second portion of the intermediate dielectric layer located in the electrode via and a third portion overlapping the second portion in the first direction, and form a dielectric via, wherein the substrate via, the electrode via, and the dielectric via at least partially overlap in the first direction and collectively constitute at least part of the air vent.

[0021] A method for manufacturing a micro-electro-mechanical system device according to at least one embodiment of the present disclosure further includes: forming an additional dielectric layer on the first side of the substrate before forming the first electrode layer; wherein after performing the second removal process on the substrate, the back cavity and the substrate via respectively expose a portion of the additional dielectric layer, and the dielectric release process further removes the portion of the additional dielectric layer exposed by the back cavity and the substrate via.

[0022] A method for manufacturing a micro-electro-mechanical system device according to at least one embodiment of the present disclosure further includes: forming a passivation layer before and / or after forming the second electrode layer; and removing a portion of the passivation layer to form a passivation opening exposing the intermediate dielectric layer before performing the dielectric release process. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure and are not limiting of the present disclosure.

[0024] Figure 1 A schematic cross-sectional view of a micro-electro-mechanical system device is shown.

[0025] Figure 2 A schematic cross-sectional view of a micro-electro-mechanical system device after being attached to a film layer and undergoing film suction is shown.

[0026] Figure 3 A schematic cross-sectional view of a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0027] Figure 4 A schematic cross-sectional view of a microelectromechanical system device according to some other embodiments of the disclosure is shown.

[0028] Figure 5 A schematic cross-sectional view of an electronic device according to some embodiments of the disclosure is shown.

[0029] Figure 6 A schematic cross-sectional view of an electronic device according to some other embodiments of the disclosure is shown.

[0030] Figure 7 A schematic top view of a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0031] Figure 8 A schematic bottom view of a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0032] Figure 9 A schematic plan view of an electronic device according to some embodiments of the disclosure is shown.

[0033] Figure 10 A schematic cross-sectional view of forming an additional dielectric layer on a substrate in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0034] Figure 11 A schematic cross-sectional view of forming an additional dielectric via in the additional dielectric layer in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0035] Figure 12 A schematic cross-sectional view of forming a first electrode layer in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0036] Figure 13 A schematic cross-sectional view of forming an electrode via in the first electrode layer in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0037] Figure 14 A schematic cross-sectional view of forming an intermediate dielectric layer in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0038] Figure 15 A schematic cross-sectional view of forming a dielectric opening in the intermediate dielectric layer in a method of manufacturing a microelectromechanical system device according to some embodiments of the disclosure is shown.

[0039] Figure 16A schematic cross-sectional view is shown in a method of manufacturing a microelectromechanical system device according to some embodiments of the present disclosure, in which a passivation layer and a second electrode layer are formed.

[0040] Figure 17 A schematic cross-sectional view is shown in a method of manufacturing a microelectromechanical system device according to some embodiments of the present disclosure, illustrating the formation of a release hole, a passivation opening, and a passivation via.

[0041] Figure 18 A schematic cross-sectional view is shown illustrating the formation of a first electrode pad and a second electrode pad in a method of manufacturing a microelectromechanical system device according to some embodiments of the present disclosure.

[0042] Figure 19 A schematic cross-sectional view is shown of a method for manufacturing a microelectromechanical system device according to some embodiments of the present disclosure, in which a recessed channel is formed on the second side of a substrate.

[0043] Figure 20 A schematic cross-sectional view is shown of a method for manufacturing a microelectromechanical system device according to some embodiments of the present disclosure, in which a back cavity and a substrate via are formed in a substrate.

[0044] Figure 21 A schematic cross-sectional view is shown after forming a first cavity, a second cavity, and a vent hole in a method of manufacturing a microelectromechanical system device according to some embodiments of the present disclosure. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0046] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0047] Figure 1 A schematic cross-sectional view of a microelectromechanical system (MEMS) device is shown.Figure 2 shows a schematic cross-sectional view of another micro-electro-mechanical system device.

[0048] Referring to Figure 1 , the micro-electro-mechanical system device includes a substrate 10, a diaphragm 11, a back plate 12, a lower cavity 15 and an upper cavity 16. The diaphragm 11 is located between the lower cavity 15 and the upper cavity 16; the back plate 12 is provided with a release hole to make the upper cavity 16 communicate with the space above the back plate 12. In some examples, the diaphragm 11 is provided with a via hole, and the lower cavity 15 and the upper cavity 16 can be in space communication with each other through the via hole. For example, Figure 1 The micro-electro-mechanical system device (MEMS) shown can be a capacitive pressure sensor, and can also be referred to as a MEMS capacitive pressure sensor, and can be applied to electronic devices such as electronic cigarettes. However, the capacitive pressure product may

[0049] Referring to Figure 2 To avoid the above problems caused by the via hole in the diaphragm 11, a diaphragm 11 without a via hole can be provided. For example, as shown in Figure 2 , the diaphragm 11 of the micro-electro-mechanical system device is not provided with a via hole, so that the lower cavity 15 and the upper cavity 16 are isolated from each other, so that the pollution problem caused by the pollution of the pollution such as tobacco tar entering the space between the diaphragm and the back plate through the via hole can be avoided. However, such a micro-electro-mechanical system device may have a continuous diaphragm problem during dicing or transportation.

[0050] For example, as shown in Figure 2 , during dicing or transportation, the micro-electro-mechanical system device is attached to a film layer 20 (for example, a UV film), and because the diaphragm 11 does not have a via hole, the lower cavity 15 is sealed. The upper cavity 16 and the lower cavity 15 are isolated from each other, and there may be a pressure difference between the two ends of the diaphragm 11, which may cause the diaphragm to displace due to the pressure difference. For example, when the air pressure of the lower cavity 15 is greater than that of the upper cavity 16, the diaphragm 11 can move towards the back plate 12 and can contact the spacer provided in the upper cavity 16, that is, the diaphragm is sucked. Because the lower cavity 15 is sealed, the diaphragm 11 may be continuously deformed due to the suction of the diaphragm, which may cause the performance of the diaphragm and the sensor to decrease; and after the film layer 20 is attached, the diaphragm 11 is deformed due to the suction, and the micro-electro-mechanical system device cannot be electrically tested and screened.

[0051] To solve the above problems, the micro-electro-mechanical system device provided by the embodiments of the present disclosure can avoid the pollution problem caused by the diaphragm via, and also avoid the problem of continuous diaphragm absorption of the diaphragm during the dicing or transportation process, thereby improving the device performance and reliability, and enabling the micro-electro-mechanical system device to be electrically tested after being attached to a film layer such as an attachment film.

[0052] For example, the micro-electro-mechanical system device provided by the embodiments of the present disclosure includes: a stack structure including a substrate and a first electrode layer, an intermediate dielectric layer, and a second electrode layer disposed on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is located between the first electrode layer and the second electrode layer; a first cavity extending through the substrate from a second side of the substrate opposite the first side and exposing the first electrode layer; a second cavity located between the first electrode layer and the second electrode layer in the first direction and surrounded by the intermediate dielectric layer in a second direction parallel to a major surface of the substrate, wherein a portion of the first electrode layer is located between the first cavity and the second cavity, physically separates the first cavity and the second cavity, and serves as a diaphragm; a vent hole extending through the stack structure in the first direction; and a recessed channel recessed from the second side of the substrate toward the first side and in spatial communication with the vent hole and the first cavity.

[0053] In the embodiments of the present disclosure, the diaphragm physically separates the first cavity and the second cavity, thereby avoiding the pollution problem; and by providing the vent hole and the recessed channel connecting the first cavity and the vent hole, the first cavity is in communication with the vent hole in the case of isolation of the first cavity and the second cavity during the dicing or transportation process, thereby avoiding the problem of continuous diaphragm absorption of the diaphragm, and further improving the device performance and reliability, and enabling the micro-electro-mechanical system device to be electrically tested after being attached to a film layer such as an attachment film.

[0054] Figure 3 A schematic cross-sectional view of a micro-electro-mechanical system device according to some embodiments of the present disclosure is shown.

[0055] Reference Figure 3 In some embodiments, the micro-electro-mechanical system device 500 includes the stack structure 200, the first cavity 112, the second cavity 116, the vent hole 115, and the recessed channel 111. For example, the stack structure 200 includes the substrate 100, the additional dielectric layer 101, the first electrode layer 103, the intermediate dielectric layer 105, the passivation layer 107, and the second electrode layer 108 stacked in the first direction D1. The intermediate dielectric layer 105 is located between the first electrode layer 103 and the second electrode layer 108. For example, the micro-electro-mechanical system device 500 can be or include a capacitive pressure sensor.

[0056] For example, the substrate 100 has a first side S1 and a second side S2 opposite in the first direction D1, and other material layers in the stack structure 200 are disposed on the first side S1 of the substrate 100. In some embodiments, the first cavity 112 extends through the substrate 100 from the second side S2 of the substrate 100, and exposes a portion of the surface of the first electrode layer 103.

[0057] The second cavity 116 is located on a side of the first electrode layer 103 away from the first cavity 112, e.g., between the first electrode layer 103 and the second electrode layer 108 in the first direction D1, and is surrounded by the intermediate dielectric layer 105 in the second direction D2 parallel to the major surface of the substrate. The second direction D2 intersects the first direction D1, e.g., is substantially perpendicular to the first direction D1. For example, the first direction D1 can be a vertical direction; in this context, the second direction D2 refers to a direction parallel to the major surface of the substrate, e.g., includes a horizontal direction.

[0058] The first cavity 112, the first electrode layer 103, the second cavity 116, and the second electrode layer 108 at least partially overlap in the first direction D1. In this context, a plurality of components overlap in a direction means that the projections of the components on a reference plane perpendicular to the direction overlap. That is, the first cavity 112, the first electrode layer 103, the second cavity 116, and the second electrode layer 108 at least partially overlap in the projection on a reference plane perpendicular to the first direction, e.g., a reference plane parallel to the major surface of the substrate. A portion of the first electrode layer 103 is located between the first cavity 112 and the second cavity 116, physically separates the first cavity 112 and the second cavity 116, and serves as a diaphragm. The diaphragm portion of the first electrode layer 103 is free of vias for spatially connecting the first cavity 112 and the second cavity 116, thus avoiding contamination issues due to diaphragm vias.

[0059] In some embodiments, the vent hole 115 extends through the stack structure 200 in the first direction D1, and can be disposed on a side of the first cavity 112 and the second cavity 116 in the second direction D2. That is, the projection of the vent hole 115 on a reference plane parallel to the major surface of the substrate is offset from the projections of the first cavity 112 and the second cavity 116 on the reference plane. The vent hole 115 overlaps the first cavity 112 and the second cavity 116 in the second direction D2; that is, the projection of the vent hole 115 on a reference plane perpendicular to the major surface of the substrate overlaps the projections of the first cavity 112 and the second cavity 116 on the reference plane.

[0060] In some embodiments, the recessed channel 111 is recessed from the second side S2 of the substrate 100 toward the first side S1 and is in spatial communication with the vent hole 115 and the first cavity 112. For example, in some embodiments, the recessed channel 111 can not be filled with a layer of material before the microelectromechanical system device is mounted to the circuit substrate, such that the vent hole 115 and the first cavity 112 can be in spatial communication with each other through the recessed channel 111.

[0061] In some embodiments, the recessed channel has a height in the first direction that is less than a thickness of the substrate in the first direction and / or a height of the first cavity in the first direction.

[0062] In some embodiments, the vent hole is offset from the first cavity and the second cavity in a direction parallel to a major surface of the substrate, and the recessed channel is between the vent hole and the first cavity.

[0063] In some embodiments, one end of the vent hole is in communication with the recessed channel, and the other end of the vent hole is connected to the same environmental space as the second cavity.

[0064] For example, the recessed channel 111 has a height hi in the first direction Di that is less than a thickness of the substrate 100 in the first direction Di and less than a height of the first cavity 112 in the first direction Di. For example, the substrate 100 has a first substrate surface 100a and a second substrate surface 100b at different levels in the first direction Di at its second side S2, and the first substrate surface 100a can also be referred to as the bottommost surface of the substrate. The second substrate surface 100b is closer to the surface of the first side S1 of the substrate 100 (i.e., the top surface shown in the figure) than the first substrate surface 100a. The recessed channel 111 is bounded by the second substrate surface 100b and a substrate sidewall (not shown) of the substrate 100, and the height hi of the recessed channel 111 is defined by the distance between the first substrate surface 100a and the second substrate surface 100b in the first direction Di. For example, the height hi of the recessed channel 111 can range from about 1 micron to 20 microns. Figure 3

[0065] In the second direction D2 parallel to the major surface of the substrate, the vent hole 115 is offset from and spaced apart from the first cavity 112 and the second cavity 116, and the recessed channel 111 is between the vent hole 115 and the first cavity 112. For example, one end of the recessed channel 111 is in communication with the first cavity 112, and the other end of the recessed channel 111 is in communication with the vent hole 115.

[0066] ​In some embodiments, the vent 115 extends through a plurality of material layers of the stack structure 200 in the first direction Dl, one end of the vent 115 (i.e., the end proximate to the second side of the substrate) is in communication with the recessed channel 111, and the other end of the vent 115 is connected to the same environmental space as the second cavity 116. It should be understood that the environmental space herein includes any environment in which the microelectromechanical system device is placed, which can include, for example, an atmospheric environment or other environmental space during dicing, shipping, etc., without limitation.

[0067] In some embodiments, the microelectromechanical system device further includes a release hole extending through the second electrode layer and in communication with the second cavity space, such that the second cavity is in communication with the environmental space through the release hole.

[0068] For example, the microelectromechanical system device 500 further includes one or more release holes 109c extending through the second electrode layer 108 and in communication with the second cavity 116 space, such that the second cavity 116 can be connected to the environmental space outside the cavity through the release hole 109c. In embodiments in which the stack structure 200 includes the passivation layer 107, the release hole 109c also extends through the passivation layer 107. In the illustrated example, the environmental space is located above the stack structure, in communication with the vent 115 space, and in communication with the second cavity 116 space through the release hole 109c. Figure 3

[0069] In some embodiments, the vent includes a substrate via in the substrate, and the recessed channel connects the first cavity and the substrate via.

[0070] In some embodiments, the vent includes an electrode via in the first electrode layer, the electrode via at least partially overlapping the substrate via in the first direction.

[0071] For example, the vent 115 includes a plurality of material vias in the respective material layers of the stack structure 200, which are at least partially aligned (i.e., at least partially overlapping) in the first direction Dl and in spatial communication with each other to extend through the stack structure 200. For example, the vent 115 includes a substrate via 5a in the substrate 100, and the recessed channel 111 directly connects the first cavity 112 and the substrate via 5a. For example, the vent 115 includes an electrode via 5b in the first electrode layer 103, the electrode via 5b at least partially aligned with the substrate via 5a in the first direction Dl and in spatial communication with each other.

[0072] ​For example, the first electrode layer 103 includes a diaphragm portion between the first cavity and the second cavity, and includes a support portion around the diaphragm portion, the support portion is embedded in the stack structure, and the vent hole 115 penetrates the support portion, i.e., the electrode via 5b is located in the support portion of the first electrode layer 103. In some embodiments, the portion of the first electrode layer 103 that serves as the diaphragm does not have a hole.

[0073] In some embodiments, the recessed channel includes a plurality of channel portions extending in different directions parallel to the main surface of the substrate and communicating with each other.

[0074] In some embodiments, the recessed channel includes one or more arcuate channel portions or a zigzag channel.

[0075] Figure 7 A top view of a micro-electro-mechanical system device according to some embodiments of the present disclosure is shown, Figure 8 A bottom view of a micro-electro-mechanical system device according to some embodiments of the present disclosure is shown; it schematically shows the planar positional relationship between each cavity, vent hole and recessed channel.

[0076] For example, as shown in Figure 7 and Figure 8 In some embodiments, the recessed channel 111 can be a channel extending in a non-single direction, for example, it can include a plurality of channel portions la extending in different directions parallel to the main surface of the substrate and communicating with each other. For example, the horizontal distance between the end of the first cavity 112 connected to the recessed channel 111 and the end of the vent hole 115 connected to the recessed channel 111 in a single direction parallel to the main surface of the substrate is less than the total channel length of the recessed channel 111. The total channel length of the recessed channel refers to the total length in the horizontal extension direction thereof.

[0077] For example, as shown in Figure 7 and Figure 8 The plurality of channel portions la can each be curved, for example, arcuate channel portions; in some embodiments, the recessed channel 111 including a plurality of arcuate channel portions as shown in Figure 7 and Figure 8 The recessed channel 111 including a plurality of arcuate channel portions as shown in

[0078] In the micro-electro-mechanical system device of some embodiments, an additional dielectric layer is located between the first electrode layer and the substrate; a passivation layer is located on the side of the second electrode layer close to the first electrode layer and / or on the side of the second electrode layer away from the first electrode layer, wherein the vent hole penetrates the passivation layer, the second electrode layer, the intermediate dielectric layer, the first electrode layer, the additional dielectric layer and the substrate.

[0079] Reference is made to Figure 3 For example, the additional dielectric layer 101 is located between the substrate 100 and the first electrode layer 103. In some embodiments, the additional dielectric layer 101 is provided with additional dielectric vias, and the first electrode layer 103 is in contact with the substrate 100 through the additional dielectric vias, but the present disclosure is not limited thereto. In other embodiments, the additional dielectric layer 101 can also not be provided with vias, and the first electrode layer 103 and the substrate 100 are separated by the additional dielectric layer 101 without being in contact with each other.

[0080] In some embodiments, the passivation layer 107 is located on the side of the second electrode layer 108 close to the first electrode layer 103. For example, the passivation layer 107 is located on the side of the intermediate dielectric layer 105 away from the substrate, and can be located between the second electrode layer 108 and the second cavity 116, and between the second electrode layer 108 and the intermediate dielectric layer 105.

[0081] In some embodiments, the second cavity 116 is jointly defined by the sidewall of the intermediate dielectric layer 105 and the opposite surfaces (i.e., the surfaces facing each other) of the passivation layer 107 and the first electrode layer 103. In some embodiments, the passivation layer 107 includes a passivation body portion and a passivation protruding portion 107a, the release hole 109c extends through the passivation body portion, and the passivation protruding portion 107a is located on the side of the passivation body portion close to the first electrode layer 103, i.e., protruding from the surface (i.e., the lower surface shown in the figure) of the passivation body portion on the side close to the first electrode layer toward the first electrode layer 103. The passivation protruding portion 107a can be used as a spacer to prevent the diaphragm from being completely adsorbed to the body portion of the passivation layer when the position changes.

[0082] In this embodiment, the air release hole 115 penetrates through multiple material layers in the stacked structure 200, such as the second electrode layer 108, the passivation layer 107, the intermediate dielectric layer 105, the first electrode layer 103, the additional dielectric layer 101, and the substrate 100. The release hole 109c extends through the passivation layer 107 to communicate with the second cavity 116.

[0083] In some embodiments, the micro-electro-mechanical system device further includes a first electrode pad electrically connected to the first electrode layer, and a second electrode pad electrically connected to the second electrode layer.

[0084] Reference is made to Figure 3 For example, the micro-electro-mechanical system device further includes a first electrode pad 110a and a second electrode pad 110b. The first electrode pad 110a can be located in the passivation via of the passivation layer 107 and disposed on the first electrode layer 103 to be electrically connected to the first electrode layer 103; and the second electrode pad 110b is disposed on the second electrode layer 108 to be electrically connected to the second electrode layer 108.

[0085] In some embodiments, the MEMS device can be a capacitive pressure sensor, and can be referred to as a MEMS capacitive pressure sensor. For example, in the capacitive pressure sensor, the first electrode layer 103 and the second electrode layer 108, together with the dielectric material layer and the second cavity 116 therebetween, form a capacitive element, in which the first electrode layer 103 and the second electrode layer 108 serve as the electrode plates of the capacitive element. In this embodiment, the dielectric material layer includes the intermediate dielectric layer 105 and the passivation layer 107, and the dielectric material layer together with the second cavity 116 forms the inter-electrode dielectric. The first electrode pad 110a and the second electrode pad 110b serve as the conductive terminals of the capacitive element, and can be used to detect the capacitance of the capacitive element. The portion of the first electrode layer 103 between the first cavity 112 and the second cavity 116 serves as a diaphragm. For example, the diaphragm can extend substantially along a horizontal direction including the second direction D2 in an initial state, in which the diaphragm and the second electrode layer 108 have an initial spacing, and correspondingly, the capacitive element has an initial capacitance corresponding to the initial spacing. The diaphragm can vibrate (i.e., displace) when subjected to a pressure, for example, the diaphragm can displace in the first direction D1 when subjected to an upward or downward pressure, so that the spacing between the diaphragm and the second electrode layer 108 in the first direction D1 changes, and correspondingly, the capacitance of the capacitive element changes, and the change in capacitance can be detected by the first electrode pad 110a and the second electrode pad 110b, and correspondingly, the pressure subjected by the diaphragm can be sensed by the detected changed capacitance. Figure 3

[0086] It should be understood that according to the formula for calculating capacitance, the capacitance of the capacitive element is proportional to the facing area of the electrode plates, and inversely proportional to the distance between the electrode plates. For example, when the diaphragm is subjected to an upward pressure, the diaphragm moves (e.g., bends) towards the second electrode layer 108, and correspondingly, the spacing between the diaphragm and the second electrode layer 108 decreases, and correspondingly, the capacitance of the capacitive element increases. When the diaphragm is subjected to a downward pressure, the diaphragm moves (e.g., bends) away from the second electrode layer 108, and correspondingly, the spacing between the diaphragm and the second electrode layer 108 increases, and correspondingly, the capacitance of the capacitive element decreases. In some embodiments, the magnitude of the pressure can be sensed by the measured change in capacitance.

[0087] Figure 4 A schematic cross-sectional view of a MEMS device 500 according to some other embodiments of the present disclosure is shown. The MEMS device of this embodiment is similar to the aforementioned embodiments, except for the arrangement of the passivation layer.

[0088] Reference is made to Figure 4 ​In some embodiments, a passivation layer 107 can be disposed on a side of the second electrode layer 108 distal to the first electrode layer 103, covering the surface of the second electrode layer 108 distal to the first electrode layer. In some embodiments, the passivation layer 107 can extend from the side of the second electrode layer distal to the first electrode layer, through the second electrode layer 108 and into the second cavity 116, and have a passivation protrusion 107a in the second cavity 116.

[0089] In this embodiment, the second cavity 116 is defined by the sidewall of the intermediate dielectric layer 105 and the opposing surfaces of the first electrode layer 103 and the second electrode layer 108. The passivation protrusion 107a can act as a spacer and is configured to prevent the diaphragm from contacting the second electrode layer 108 during a change in position.

[0090] The release hole 109c extends through the passivation layer 107 and the second electrode layer 108 and is in spatial communication with the second cavity 116.

[0091] In Figure 3 and Figure 4 In some embodiments, the passivation layer is disposed on a side of the second electrode layer and is configured to provide support to the second electrode layer. For example, the passivation layer can act as a support layer to support the second electrode layer such that the portion of the second electrode layer suspended over the second cavity can be fixed during operation of the MEMS and substantially not vibrate, i.e., not change in position. In other embodiments, a passivation layer can be disposed on both sides of the second electrode layer, and the present disclosure is not limited in this regard.

[0092] An electronic device is provided, comprising: a microelectromechanical system device as described in any of the above embodiments; and an attachment film attached to the second side of the substrate, wherein the recessed channel is located between the substrate and the attachment film, and the first cavity is in communication with the vent hole through the recessed channel.

[0093] Figure 5 A schematic cross-sectional view of an electronic device according to some embodiments of the present disclosure is shown.

[0094] Reference is made to Figure 5In this embodiment, in the case that an attachment film is attached to the second side of the substrate during slicing or transportation, etc., although the diaphragm separates the first cavity and the second cavity, the first cavity can be in communication with the ambient space through the recessed channel and the vent hole without being sealed due to the provision of the recessed channel and the vent hole, thereby avoiding the problem of the diaphragm being sucked to the film due to the pressure difference between the two sides. Moreover, since the problem of the diaphragm being sucked to the film does not occur, the micro-electro-mechanical system device can be electrically tested after the attachment film is provided.

[0095] In this embodiment, in the case that an attachment film is attached to the second side of the substrate during slicing or transportation, etc., although the diaphragm separates the first cavity and the second cavity, the first cavity can be in communication with the ambient space through the recessed channel and the vent hole without being sealed due to the provision of the recessed channel and the vent hole, thereby avoiding the problem of the diaphragm being sucked to the film due to the pressure difference between the two sides. Moreover, since the problem of the diaphragm being sucked to the film does not occur, the micro-electro-mechanical system device can be electrically tested after the attachment film is provided.

[0096] The embodiments of the present disclosure provide an electronic device, comprising the micro-electro-mechanical system device described in any one of the above embodiments; a circuit substrate located on the side of the micro-electro-mechanical system device close to the substrate; and an adhesive layer located between the micro-electro-mechanical system device and the circuit substrate, and at least part of the adhesive layer is located in the recessed channel to isolate the first cavity and the vent hole.

[0097] Figure 6 A schematic cross-sectional view of an electronic device according to some embodiments of the present disclosure is shown.

[0098] Reference Figure 6 In some embodiments, the electronic device 600 comprises the micro-electro-mechanical system device 500, the circuit substrate 400 and the adhesive layer 401. For example, the micro-electro-mechanical system device 500 can be mounted on the circuit substrate 400, and the circuit substrate 400 can be located on the side of the micro-electro-mechanical system device 500 close to the substrate 100. The adhesive layer 401 is provided between the micro-electro-mechanical system device 500 and the circuit substrate 400, so that the micro-electro-mechanical system device 500 can be attached and fixed to the circuit substrate 400 through the adhesive layer. In some embodiments, at least part of the adhesive layer 401 is located in the recessed channel 111 to isolate the first cavity 112 and the vent hole 115.

[0099] For example, the portion of the adhesive layer 401 located in the recessed channel 111 is located between the second substrate surface 100b and the circuit substrate 400, and contacts the substrate sidewall defining the recessed channel 111, such that at least a portion of the recessed channel 111 is filled by the adhesive layer 401 and is blocked, so that the first cavity 112 and the air vent 115 are isolated from each other.

[0100] In some embodiments, another portion of the adhesive layer 401 can be located between the first substrate surface 100 of the substrate 100 and the circuit substrate 400, which is not shown in Figure 6 FIG. 1 for simplicity of the drawing. In some embodiments, the adhesive layer 401 is disposed in the recessed channel 111 but does not extend into the first cavity 112, and for example, can be spaced apart from the first cavity 112 by a distance.

[0101] In some embodiments, the adhesive layer is annular, and the orthographic projection of the first cavity on the circuit substrate is surrounded by the orthographic projection of the adhesive layer on the circuit substrate. For example, the orthographic projection of the first cavity is located within the orthographic projection of the adhesive layer, and for example, can be spaced apart from each other.

[0102] Figure 9 FIG. 1 for simplicity of the drawing. In some embodiments, the adhesive layer 401 is disposed in the recessed channel 111 but does not extend into the first cavity 112, and for example, can be spaced apart from the first cavity 112 by a distance. Figure 6 FIG. 1 for simplicity of the drawing. In some embodiments, the adhesive layer 401 is disposed in the recessed channel 111 but does not extend into the first cavity 112, and for example, can be spaced apart from the first cavity 112 by a distance.

[0103] Referring to Figure 6 and Figure 9 In some embodiments, the adhesive layer 401 can be annular, and the orthographic projection of the first cavity 112 on the circuit substrate is surrounded by the orthographic projection of the adhesive layer on the circuit substrate, and the orthographic projection of the first cavity 112 is located within the orthographic projection of the adhesive layer 401 and is spaced apart from each other. In some embodiments, providing the recessed channel 111 to include a plurality of channel portions extending in different horizontal directions (for example, including one or more arc-shaped channel portions or including a zigzag channel) can facilitate providing sufficient space for the adhesive layer in the recessed channel, avoiding the adhesive layer spreading into the first cavity 112 through the recessed channel.

[0104] In the electronic device 600, since the adhesive layer 401 is provided to isolate the first cavity 112 and the air vent 115, the function of the micro-electro-mechanical system device 500 is not affected by the provision of the air vent; for example, after being mounted on the circuit substrate 400, the micro-electro-mechanical system device 500 can normally perform the function test after installation and normal operation.

[0105] That is, the recessed channel and the vent are configured to prevent the diaphragm from being sucked during dicing or shipping, and after being mounted to a circuit substrate, the recessed channel is sealed so as not to adversely affect the function of the micro-electro-mechanical system device.

[0106] The manufacturing method of the micro-electro-mechanical system device includes: forming a stack structure, the stack structure including: a substrate and a first electrode layer, an intermediate dielectric layer, and a second electrode layer disposed on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is between the first electrode layer and the second electrode layer; forming a first cavity, the first cavity extending through the substrate from a second side of the substrate opposite the first side and exposing the first electrode layer; forming a second cavity, the second cavity being between the first electrode layer and the second electrode layer in the first direction and being surrounded by the intermediate dielectric layer in a second direction parallel to a main surface of the substrate, wherein a portion of the first electrode layer is between the first cavity and the second cavity, physically separates the first cavity and the second cavity, and serves as a diaphragm; forming a vent to pass through the stack structure in the first direction; and forming a recessed channel on the second side of the substrate, the recessed channel being recessed from the second side of the substrate toward the first side and in spatial communication with the vent and the first cavity.

[0107] The manufacturing method of the micro-electro-mechanical system device has the same technical effects as described above for the micro-electro-mechanical system device.

[0108] In some embodiments, the manufacturing method of the micro-electro-mechanical system device includes: providing a substrate; forming a first electrode layer on the first side of the substrate; removing a portion of the first electrode layer to form an electrode via in the first electrode layer; forming the intermediate dielectric layer on a side of the first electrode layer away from the substrate, and the intermediate dielectric layer fills in the electrode via; forming the second electrode layer on a side of the intermediate dielectric layer away from the substrate; performing a first removal process on the substrate to form the recessed channel on the second side of the substrate; performing a second removal process on the substrate to form a back cavity through the substrate and a substrate via, the back cavity serving as at least part of the first cavity, and the substrate via at least partially overlapping the electrode via in the first direction; and performing a dielectric release process to remove a first portion of the intermediate dielectric layer and form the second cavity, remove a second portion of the intermediate dielectric layer in the electrode via and a third portion overlapping the second portion in the first direction, and form a dielectric via, wherein the substrate via, the electrode via, and the dielectric via at least partially overlap in the first direction and collectively constitute at least part of the vent.

[0109] In some embodiments, the method of fabricating a micro-electro-mechanical system device further comprises: forming an additional dielectric layer on the first side of the substrate before forming the first electrode layer; wherein after performing the second removal process on the substrate, the back cavity and the substrate via respectively expose portions of the additional dielectric layer, and the dielectric release process further removes the portions of the additional dielectric layer exposed by the back cavity and the substrate via.

[0110] In some embodiments, the method of fabricating a micro-electro-mechanical system device further comprises: forming a passivation layer before and / or after forming the second electrode layer; and removing portions of the passivation layer to form a passivation opening exposing the intermediate dielectric layer before performing the dielectric release process.

[0111] Figures 10 to 21 schematically showing structures of various steps in a method of fabricating a micro-electro-mechanical system device according to some embodiments of the present disclosure. The method of fabricating a micro-electro-mechanical system device can comprise semiconductor technology processes.

[0112] Reference is made to Figure 10 A substrate 100 is provided, which can be or comprise a semiconductor substrate; for example, the substrate 100 can comprise a semiconductor material such as silicon, e.g. including single-crystalline silicon. In some embodiments, the substrate 100 can be a semiconductor wafer, e.g. a silicon wafer. The substrate 100 has a first side and a second side opposite in a first direction D1. In some embodiments, the substrate 100 can be an N-type substrate, and can be doped with a dopant such as phosphorus or arsenic, but the present disclosure is not limited thereto. In other embodiments, the substrate 100 can also be a P-type substrate, and can be doped with a dopant such as boron. Herein, the first direction D1 can be a direction substantially perpendicular to a major surface of the substrate 100 (e.g. the horizontal surface shown in the figures), and the second direction D2 intersects the first direction D1, e.g. the second direction D2 can be substantially perpendicular to the first direction D1, and can be a direction substantially parallel to the major surface of the substrate.

[0113] Material layers such as an additional dielectric layer 101 are then formed on the substrate 100. For example, the material layers can be formed on the first side of the substrate 100 at least in sequence. In some examples, the material layers can also be formed on the second side of the substrate 100 in sequence. Herein, “on” a component can include on either side of the component, without necessarily being “above” as shown in the figures.

[0114] For example, the additional dielectric layer 101 can comprise a dielectric material such as silicon oxide, and can be formed on the substrate 100 by a thermal oxidation process.

[0115] Reference is made to Figure 11An additional dielectric via 102 is formed in the additional dielectric layer 101 to expose a portion of the surface of the first side of the substrate 100. For example, a patterning process including photolithography and etching can be performed on the additional dielectric layer 101 to remove a portion of the additional dielectric layer 101 and form the additional dielectric via 102. In this context, a patterning process including photolithography and etching performed on a material layer can include forming a patterned mask layer (e.g., a patterned photoresist layer) on the material layer by a photolithography process, and then performing an etching process on the material layer with the patterned mask layer as an etching mask.

[0116] Referring to Figure 12 A first electrode layer 103 is formed on the substrate 100, for example, the first electrode layer 103 is located on the side of the additional dielectric layer 101 away from the substrate 100, and fills in the additional dielectric via and contacts the substrate 100. For example, the first electrode layer 103 can include a doped semiconductor material, which can include silicon, for example, amorphous silicon (a-Si), and the semiconductor material can be doped with phosphorus or arsenic, or can also be doped with boron.

[0117] In some embodiments, the first electrode layer 103 can be formed by a deposition process (e.g., a low pressure deposition process), followed by a doping process (e.g., an ion implantation process) to implant a dopant such as phosphorus into the semiconductor material layer, and then an annealing process can be performed.

[0118] Referring to Figure 13 In some embodiments, a portion of the first electrode layer 103 is removed to form an electrode via 5b in the first electrode layer 103. The electrode via 5b exposes a portion of the surface of the additional dielectric layer 101. For example, a portion of the first electrode layer can be removed by a patterning process including photolithography and etching.

[0119] Referring to Figure 14 An intermediate dielectric layer 105 is formed on the side of the first electrode layer 103 away from the substrate 100, and the intermediate dielectric layer 105 can include the same or similar dielectric material as the additional dielectric layer 101; for example, the intermediate dielectric layer 105 can include silicon oxide, Tetraethyl orthosilicate (TEOS) or the like. For example, the intermediate dielectric layer 105 can be formed by a deposition process (e.g., LPCVD).

[0120] In some embodiments, one or more dielectric recesses are formed in the middle dielectric layer 105, such as the first dielectric recess 105a and the second dielectric recess 105b, which are recessed from the surface of the middle dielectric layer distal to the substrate toward the first electrode layer. For example, the first dielectric recess 105a can be located above and overlapping with an electrode via of the first electrode layer 103 in the first direction. The first dielectric recess 105a can be naturally formed due to the middle dielectric layer filling in the electrode via. The second dielectric recess 105b is located above the first electrode layer 103 and can be formed by a patterning process including lithography and etching (e.g., dry etching). The second dielectric recess 105b can be used to form a subsequent passivation protrusion.

[0121] Referring to Figure 15 One or more dielectric openings are formed in the middle dielectric layer 105, such as the first dielectric opening 106a and the second dielectric opening 106b, to expose the first electrode layer 103. In some embodiments, portions of the middle dielectric layer 105 are removed to form the dielectric openings by a patterning process including lithography and etching (e.g., wet etching). In some embodiments, the first dielectric opening 106a overlaps with an additional dielectric opening in the first direction perpendicular to the major surface of the substrate to expose a portion of the first electrode layer 103 located in the additional dielectric opening. The second dielectric opening 106b can expose a portion of the first electrode layer 103 located on the additional dielectric layer 101.

[0122] Referring to Figure 15 And Figure 16 In some embodiments, a passivation layer 107 is formed on the side of the middle dielectric layer 105 distal to the substrate, and the passivation layer 107 fills in one or more dielectric openings and dielectric recesses of the middle dielectric layer 105. The portion of the passivation layer 107 filling in the second dielectric recess forms a passivation protrusion. The material of the passivation layer 107 is different from the material of the middle dielectric layer and the additional dielectric layer. For example, the passivation layer 107 can include a dielectric material such as silicon nitride, and can be formed by a deposition process such as LPCVD, etc.

[0123] Next, a second electrode layer 108 is formed on a side of the passivation layer 107 distal to the substrate. In some embodiments, the second electrode layer 108 can comprise a semiconductor material such as silicon, e.g., can comprise polysilicon, and the semiconductor material can be doped with phosphorous or arsenic, or can also be doped with boron. For example, the second electrode layer 108 can comprise in-situ doped polysilicon (D-polysilicon), and can be formed by in-situ doping in a deposition process, e.g., a low pressure deposition process. Forming the second electrode layer can comprise forming a second electrode material layer, and subjecting the second electrode material layer to a patterning process comprising photolithography and etching, e.g., dry etching, to form the second electrode layer 108; for example, the second electrode layer 108 has an opening region to expose a portion of the passivation layer over the electrode via and the dielectric opening.

[0124] In some embodiments, portions of the passivation layer are removed to form one or more passivation openings and one or more passivation vias. The one or more passivation openings expose the intermediate dielectric layer, and the one or more passivation vias expose the first electrode layer.

[0125] For example, with reference to Figure 16 and Figure 17 In some embodiments, a patterning process comprising photolithography and etching, e.g., dry etching, is performed to form a release hole 109c through the second electrode layer 108 and the passivation layer 107, the release hole 109c exposing the intermediate dielectric layer 105. The patterning process can comprise forming a patterned mask layer having a mask opening on the second electrode layer, and then performing an etching process on the second electrode layer and the passivation layer with the mask layer as an etching mask to remove portions of the second electrode layer and the passivation layer exposed by the mask opening and form a release hole exposing the intermediate dielectric layer. For example, the release hole can comprise an electrode opening in the second electrode layer and a passivation opening in the passivation layer, the electrode opening and the passivation opening spatially communicating with each other and exposing the intermediate dielectric layer. In some embodiments, the patterning process can also remove portions of the intermediate dielectric layer 105, and the release hole can also comprise a recess in the intermediate dielectric layer 105.

[0126] In some embodiments, portions of the passivation layer 107 are removed to form a passivation opening 109d exposing the intermediate dielectric layer 105 and at least partially overlapping with the electrode via of the first electrode layer 103 in a direction perpendicular to the major surface of the substrate.

[0127] In some embodiments, portions of the passivation layer 107 are removed to form a first passivation via 109a and a second passivation via 109b that expose the first electrode layer 103, the first passivation via 109a can be located in a portion of the passivation layer in the first dielectric opening and expose a portion of the first electrode layer located in the additional dielectric opening. The second passivation via 109b can be located in a portion of the passivation layer in the second dielectric opening and expose a portion of the first electrode layer 103 located on the additional dielectric layer 101.

[0128] Referring to Figure 17 and Figure 18 A first electrode pad 110a is formed in the first passivation via 109a and the second passivation via 109b, the first electrode pad 110a is electrically connected with the first electrode layer 103; a second electrode pad 110b is formed on the second electrode layer 108, the second electrode pad 110b is electrically connected with the second electrode layer 108. The first electrode pad 110a and the second electrode pad 110b can include a metal material such as chromium, gold, an alloy thereof or the like. For example, a plurality of electrode pads can be formed by an evaporation and lift-off process.

[0129] Referring to Figure 18 and Figure 19 The material layer located on the second side S2 of the substrate 100 is removed to expose the surface of the second side of the substrate 100. It should be understood that, Figures 10 to 18 In the process steps shown, in addition to the material layer that can be deposited on the second side of the substrate, other process steps such as patterning are performed on the relevant material layer on the first side S1 of the substrate 100. In some examples, the material layer located on the second side S2 of the substrate 100 can be removed by a polishing process such as chemical mechanical polishing (CMP), mechanical grinding or the like. In other embodiments, when forming the material layers, the material layers can also not be formed on the second side of the substrate.

[0130] In some embodiments, after the material layer on the second side S2 of the substrate 100 is removed, the substrate 100 can be selectively subjected to a thinning process to thin the thickness of the substrate 100. The thinning process can include a polishing process such as CMP, mechanical grinding or the like. For example, the thickness of the thinned substrate 100 can be about 300 microns to 450 microns, but the present disclosure is not limited thereto.

[0131] In some embodiments, a first removal process is performed on the substrate to form a recessed channel on a second side of the substrate. The first removal process can be or include a first patterning process. For example, a first patterning process including lithography and etching is performed on the substrate 100 from the second side of the substrate 100 to remove portions of the substrate 100 and form a recessed channel 111 recessed from a first substrate surface 100a of the substrate 100 toward a first side of the substrate 100 and recessed to a second substrate surface 100b.

[0132] In some embodiments, a second removal process is performed on the substrate to form a back cavity through the substrate to serve as at least part of a subsequent first cavity and a substrate via at least partially overlapping with an electrode via of the first electrode layer in the first direction. The second removal process can be or include a second patterning process.

[0133] Referring to Figure 19 and Figure 20 , for example, a second patterning process including lithography and etching is performed on the substrate 100 from the second side of the substrate 100 to remove portions of the substrate and form a back cavity 112a and a substrate via 5a in the substrate 100. The back cavity 112a and the substrate via 5a are through the substrate 100 and expose the additional dielectric layer 101. The back cavity 112a and the substrate via 5a are both in communication with the recessed channel 111, for example, at both ends of the recessed channel 111. For example, the substrate via 5a at least partially overlaps with an electrode via of the first electrode layer 103 in the first direction perpendicular to the substrate major surface. For example, the substrate via 5a also at least partially overlaps with the passivation opening 109d in the first direction.

[0134] Referring to Figure 20 and Figure 21 , a dielectric release process is performed to remove portions of the additional dielectric layer 101 and the intermediate dielectric layer 105 and form the first cavity 112, the second cavity 116, and the gas vent 115. For example, the dielectric release process can include a wet etching process and an etchant used therein can contact the dielectric layers from the back cavity 112a, the substrate via 5a, the release hole 109c, and the passivation opening 109d of the substrate, and remove portions of the corresponding dielectric layers to form the corresponding cavities and vias.

[0135] For example, the dielectric release process removes a portion of the additional dielectric layer 101 exposed by the back cavity 112a of the substrate and forms a dielectric opening, the back cavity 112a and the dielectric opening collectively form the first cavity 112 and expose the first electrode layer 103. In other words, the back cavity 112a further extends into the additional dielectric layer 101 to form the first cavity 112 exposing the first electrode layer 103.

[0136] For example, a media release process removes the first portion of the intermediate media layer 105 and forms a second cavity 116. The second cavity 116 exposes a portion of the first electrode layer 103 and overlaps the first cavity 112. For example, an etchant enters the region where the first portion of the intermediate media layer 105 is located from the release hole 109c. The portion of the first electrode layer 103 between the first cavity 112 and the second cavity 116 serves as a diaphragm.

[0137] For example, a media release process removes portions of the additional media layer 101 and the intermediate media layer 105 to form a media via in the additional media layer 101 and the intermediate media layer 105, which at least partially overlaps the substrate via 5a of the substrate 100, the electrode via in the first electrode layer 103, and the passivation opening 109d in the first direction perpendicular to the substrate major surface, and collectively forms the vent hole 115. For example, an etchant can remove portions of the additional media layer 101 and the intermediate media layer 105 from the substrate via 5a and / or the passivation opening 109d to form the media via. For example, the portions of the intermediate media layer 105 removed to form the media via include a second portion of the intermediate media layer 105 located in the electrode via of the first electrode layer 103 and a third portion of the intermediate media layer 105 overlapping the second portion in the first direction.

[0138] In some embodiments, Figures 10 to 21 The illustrated process steps are wafer-level processes, for example, the substrate is a semiconductor wafer and includes a plurality of die regions, which can be spaced apart from each other by dicing regions, Figures 10 to 21 The process steps and the resulting structures in one die region of the wafer are illustrated, it is understood that the process steps and the resulting structures in other die regions are the same as illustrated in the figures. After the above process steps are completed, a plurality of semiconductor devices (i.e., the micro-electro-mechanical system device 500) are formed in the plurality of die regions of the wafer, and then a wafer dicing (or scribing) process can be performed along the dicing regions to cut the semiconductor devices in the plurality of die regions and form a plurality of independent dies, i.e., as Figure 21 The illustrated micro-electro-mechanical system device 500. The micro-electro-mechanical system device 500 is a MEMS capacitive pressure sensor and can be applied to electronic devices such as electronic cigarettes, microphones, etc.

[0139] In some embodiments, the wafer including a plurality of dies or the dies can be attached to an attachment film 300 during the wafer dicing process or subsequent transportation of the independent dies. Since the recessed channel 111 is provided to connect the first cavity 112 and the vent hole 115, the first cavity 112 is not sealed during this process and can be in communication with the ambient space through the recessed channel 111 and the vent hole 115. In this way, the problem of continuous diaphragm absorption of the diaphragm can be avoided. Moreover, after being attached to the attachment film, the micro-electro-mechanical system device can also be electrically tested.

[0140] In some embodiments, as shown in FIG. 6, after forming the micro-electro-mechanical system device 500, the micro-electro-mechanical system device 500 can be mounted on the circuit substrate 400 to form an electronic device 600. An adhesive layer 401 can be formed between the micro-electro-mechanical system device 500 and the circuit substrate 400 to seal the recessed channel 111 and isolate the first cavity 112 and the air vent 115, so as to avoid adverse effects on the function of the micro-electro-mechanical system device caused by the air vent 115. Figure 6

[0141] In the micro-electro-mechanical system device, the manufacturing method thereof, and the electronic device according to the embodiments of the present disclosure, the diaphragm isolates the first cavity and the second cavity, so as to avoid the pollution problem caused by the diaphragm via. Moreover, by arranging the recessed channel and the air vent, after the micro-electro-mechanical system device is attached to the attachment film during the dicing or transportation, the first cavity can be communicated with the air vent through the recessed channel, so as to avoid the problem of continuous film absorption of the diaphragm, thereby improving the device performance and reliability, and enabling the micro-electro-mechanical system device to be electrically tested while being attached to the attachment film. In addition, when being subsequently mounted on the circuit substrate, the recessed channel is sealed to isolate the first cavity and the air vent, so as to ensure the function and normal use of the micro-electro-mechanical system device.

[0142] The following points need to be explained:

[0143] (1) In the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are involved, and other structures can be referred to the general design.

[0144] (2) The features in the same and different embodiments of the present disclosure can be combined with each other without conflict.

[0145] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.​

Claims

1. A microelectromechanical system device, characterized by comprises: a stack structure comprising a substrate and a first electrode layer, an intermediate dielectric layer, and a second electrode layer disposed on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is located between the first electrode layer and the second electrode layer; a first cavity extending through the substrate from a second side of the substrate opposite the first side and exposing the first electrode layer; a second cavity located between the first electrode layer and the second electrode layer in the first direction and surrounded by the intermediate dielectric layer in a second direction parallel to a main surface of the substrate, wherein a portion of the first electrode layer is located between the first cavity and the second cavity, physically spacing the first cavity and the second cavity apart and serving as a diaphragm; a vent hole extending through the stack structure in the first direction; and a recessed channel recessed from the second side of the substrate toward the first side and in spatial communication with the vent hole and the first cavity.

2. The microelectromechanical system device of claim 1, wherein A height of the recessed channel in the first direction is less than a thickness of the substrate in the first direction and / or a height of the first cavity in the first direction.

3. The microelectromechanical system device of claim 1, wherein In a direction parallel to a main surface of the substrate, the vent hole is offset from the first cavity and the second cavity, and the recessed channel is located between the vent hole and the first cavity.

4. The microelectromechanical system device of claim 1, wherein One end of the vent hole is in communication with the recessed channel, and the other end of the vent hole is connected to the same environmental space as the second cavity.

5. The microelectromechanical system device of claim 4, wherein Further comprising a release hole extending through the second electrode layer and in spatial communication with the second cavity, such that the second cavity is in communication with the environmental space through the release hole.

6. The microelectromechanical system device of claim 1, wherein The vent hole comprises a substrate via located in the substrate, and the recessed channel connects the first cavity and the substrate via.

7. The microelectromechanical system device of claim 6, wherein The vent hole comprises an electrode via located in the first electrode layer, the electrode via at least partially overlapping the substrate via in the first direction.

8. The microelectromechanical system device according to any one of claims 1-7, wherein: The recessed channel comprises a plurality of channel portions extending in different directions parallel to a main surface of the substrate and in communication with each other.

9. The microelectromechanical system device of claim 8, wherein The recessed channel comprises one or more arc-shaped channel portions or comprises a zigzag channel.

10. The microelectromechanical system device of any one of claims 1-7, wherein, The portion of the first electrode layer serving as the diaphragm has no hole.

11. The microelectromechanical system device of any one of claims 1-7, wherein, Further comprising: an additional dielectric layer located between the first electrode layer and the substrate; and a passivation layer located on a side of the second electrode layer proximate to the first electrode layer and / or on a side of the second electrode layer distal to the first electrode layer, wherein the vent hole extends through the passivation layer, the second electrode layer, the intermediate dielectric layer, the first electrode layer, the additional dielectric layer, and the substrate. Further comprising:

12. The microelectromechanical system device of any one of claims 1-7, wherein, a first electrode pad in electrical connection with the first electrode layer; and a second electrode pad in electrical connection with the second electrode layer. comprising: the microelectromechanical system device according to any one of claims 1-12; 13. An electronic device, comprising: and an attachment film attached to the second side of the substrate, ​ ​ The recessed channel is located between the substrate and the attachment film, and the first cavity is in communication with the air vent through the recessed channel.

14. An electronic device, comprising: Comprising: The micro-electro-mechanical system device according to any one of claims 1-12; A circuit substrate located on a side of the micro-electro-mechanical system device close to the substrate; And An adhesive layer located between the micro-electro-mechanical system device and the circuit substrate, and at least part of the adhesive layer is located in the recessed channel to isolate the first cavity and the air vent. 15.The electronic device of claim 14, wherein, The adhesive layer is annular, and the orthographic projection of the first cavity on the circuit substrate is surrounded by the orthographic projection of the adhesive layer on the circuit substrate.

16. A method of manufacturing a microelectromechanical system device, characterized by: Comprising: Forming a stack structure, the stack structure comprising: a substrate and a first electrode layer, an intermediate dielectric layer and a second electrode layer disposed on a first side of the substrate in a first direction, wherein the intermediate dielectric layer is located between the first electrode layer and the second electrode layer; Forming a first cavity, the first cavity extending through the substrate from a second side of the substrate opposite to the first side and exposing the first electrode layer; Forming a second cavity, the second cavity being located between the first electrode layer and the second electrode layer in the first direction and being surrounded by the intermediate dielectric layer in a second direction parallel to a main surface of the substrate, wherein part of the first electrode layer is located between the first cavity and the second cavity, physically spacing the first cavity and the second cavity, and serving as a diaphragm; Forming an air vent to penetrate the stack structure in the first direction; and Forming a recessed channel on the second side of the substrate, the recessed channel being recessed from the second side of the substrate towards the first side and in spatial communication with the air vent and the first cavity.

17. The method of manufacturing a microelectromechanical system device according to claim 16, wherein Comprising: Providing a substrate; Forming a first electrode layer on the first side of the substrate; Removing part of the first electrode layer to form an electrode via in the first electrode layer; Forming the intermediate dielectric layer on a side of the first electrode layer away from the substrate, and the intermediate dielectric layer fills into the electrode via; Forming the second electrode layer on a side of the intermediate dielectric layer away from the substrate; Performing a first removal process on the substrate to form the recessed channel on the second side of the substrate; Performing a second removal process on the substrate to form a back cavity penetrating the substrate and a substrate via, the back cavity serving as at least part of the first cavity, and the substrate via at least partially overlapping the electrode via in the first direction; And Performing a dielectric release process to remove a first part of the intermediate dielectric layer and form the second cavity, remove a second part of the intermediate dielectric layer located in the electrode via and a third part overlapping the second part in the first direction, and form a dielectric via, Wherein the substrate via, the electrode via and the dielectric via at least partially overlap in the first direction and together constitute at least part of the air vent.

18. The method of manufacturing a microelectromechanical system device according to claim 17, wherein Further comprising: Forming an additional dielectric layer on the first side of the substrate before forming the first electrode layer; wherein after the second removal process is performed on the substrate, the back cavity and the substrate via respectively expose portions of the additional dielectric layer, and the dielectric release process further removes the portions of the additional dielectric layer exposed by the back cavity and the substrate via.

19. The method of manufacturing a microelectromechanical system device according to claim 17 or 18, characterized in that Also included are: forming a passivation layer before and / or after forming the second electrode layer; and before performing the dielectric release process, removing portions of the passivation layer to form passivation openings exposing the intermediate dielectric layer.

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