Method and system for laser grooving

Abstract

The application provides a laser slotting method and system, and the system comprises a laser light source, an optical modulation module, a wafer moving module and a detection compensation module; the laser beam emitted by the laser light source is irradiated to the wafer on the wafer moving module through the optical modulation module; the wafer moving module is used for driving the wafer to move relative to the laser beam; the optical modulation module is used for loading a phase hologram; the optical modulation module loads the phase hologram according to a second process parameter at the beginning, and the second process parameter comprises an energy distribution of the laser beam; the detection compensation module is in communication connection with the optical modulation module, is used for monitoring a material splashing condition of the laser beam at a machining point position, so as to obtain a material splashing image, and according to the material splashing image, the optical modulation module is controlled to update the loaded phase hologram, so that the slot formed by the laser beam on the wafer satisfies the machining requirement, and the machining point is a point where the laser beam is irradiated on the wafer. The application can improve the quality of the laser beam for slotting the wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and in particular to a method and system for laser grooving. Background Technology

[0002] Wafer grooving is a process that uses a laser beam to scribble lines on the surface of a wafer, removing material of a certain width and depth. Wafer grooving is typically followed by a subsequent mechanical dicing process to separate the manufactured die from the wafer.

[0003] In existing laser grooving processes, factors such as temperature, humidity, material modification at the wafer processing location, and heat accumulation and thermal stress generated during processing can cause the final grooving effect to differ from the expected result set by the process parameters. This leads to decreased uniformity in the grooving process, increasing the risk of chip cracking or edge chipping. Therefore, improving the quality of laser beam grooving on wafers has become a pressing issue that needs to be addressed. Summary of the Invention

[0004] To address the aforementioned issues, the laser grooving method and system provided by this invention update the phase hologram using material spatter images and second process parameters. This allows for real-time dynamic adjustment of the laser beam's energy distribution, thereby improving the stability of the laser beam's grooving and ultimately enhancing the quality of the laser beam's grooving of the wafer.

[0005] In a first aspect, the present invention provides a laser grooving system, the system comprising: a laser source, an optical modulation module, a wafer movement module, and a detection and compensation module;

[0006] The laser source is used to emit a laser beam; the laser beam emitted by the laser source illuminates the wafer on the wafer moving module through the optical modulation module;

[0007] The wafer moving module is used to load the wafer and move the wafer relative to the laser beam so that the laser beam can make grooves on the wafer surface;

[0008] The optical modulation module is used to load a phase hologram to adjust the energy distribution of the laser beam. Initially, the optical modulation module loads the phase hologram according to the second process parameters, which include the energy distribution of the laser beam and are determined by the processing requirements.

[0009] The detection compensation module is connected to the optical modulation module to monitor the material splashing at the processing point during the laser beam grooving process on the wafer, so as to obtain a material splashing image. Based on the material splashing image, the optical modulation module is controlled to update the loaded phase hologram so that the groove opened by the laser beam on the wafer meets the processing requirements. The processing point is the point on the wafer that the laser beam irradiates.

[0010] Optionally, the detection compensation module includes an imaging submodule and a data processing submodule, which are communicatively connected.

[0011] The imaging submodule is used to capture images of material spatter at the processing point location from the side of the wafer to obtain material spatter images;

[0012] The data processing submodule is used to identify material spatter images and update the phase hologram loaded by the optical modulation module based on the second process parameters and the identification results of the material spatter images, so that the grooves opened by the laser beam on the wafer meet the processing requirements.

[0013] The identification results include: the width of the material splash and the height of the material splash.

[0014] Optionally, the data processing submodule is configured with a neural network model. Based on the second process parameters, the data processing submodule obtains the target hologram by inputting the recognition result into the neural network model, and sends the target hologram to the optical modulation module so that the optical modulation module uses the target hologram as a phase hologram to adjust the laser beam.

[0015] Optionally, the data processing submodule is configured with a hologram comparison library, which stores multiple different holograms, and each hologram corresponds to a compensation strategy.

[0016] The data processing submodule is also used to determine a compensation strategy based on the recognition results and the second process parameters. According to the compensation strategy, the corresponding target hologram is selected from the hologram comparison library, and the selected target hologram is sent to the optical modulation module so that the optical modulation module uses the selected target hologram as a phase hologram to adjust the laser beam so that the groove opened by the laser beam on the wafer meets the processing requirements.

[0017] Optionally, the system also includes: a beam expanding and collimating module;

[0018] The laser beam emitted by the laser source passes sequentially through the beam expansion and collimation module, the optical modulation module, and the coaxial optical module;

[0019] The beam expander and collimator module is used to increase the diameter of the laser beam and reduce the divergence angle of the laser beam.

[0020] Optionally, the system also includes: a focusing module;

[0021] The laser beam emitted by the laser source passes through the optical modulation module and the focusing module in sequence and shines on the wafer on the wafer moving module; the focusing module is used to focus the laser beam to a specified position on the wafer surface.

[0022] Optionally, the optical modulation module includes a spatial light modulator and a collimation submodule, with the laser beam passing sequentially through the spatial light modulator and the collimation submodule;

[0023] The spatial light modulator is communicatively connected to the detection and compensation module and is used to load a phase hologram to adjust the energy distribution of the laser beam. The spatial light modulator loads the phase hologram according to the second process parameters at the beginning.

[0024] The collimation submodule is used to make the emitted laser beam parallel to the laser beam of the collimation submodule.

[0025] In a second aspect, the present invention provides a method for laser grooving, the method comprising:

[0026] According to the processing requirements, load the phase hologram;

[0027] The energy distribution of the laser beam is adjusted by using a phase hologram, so that the adjusted laser beam can create grooves on the wafer surface.

[0028] Perform the grooving compensation step until the grooving of the wafer surface is completed;

[0029] The slotting compensation steps include:

[0030] Acquire images of material spatter during the wafer grooving process using a laser beam. These images are used to record the material spatter situation during the wafer grooving process.

[0031] Based on the material spatter image and processing requirements, the phase hologram is updated to ensure that the grooves created by the laser beam on the wafer meet the processing requirements.

[0032] Optionally, before the step of loading the phase hologram according to processing requirements, the method further includes:

[0033] Based on the processing requirements, the first process parameters and the second process parameters are obtained; the first process parameters include: laser power, pulse frequency and pulse width, and the second process parameters include the energy distribution of the laser beam.

[0034] According to the first process parameters, a laser beam is generated and directed towards the hologram loading module loaded with the phase hologram;

[0035] According to the processing requirements, the steps for loading the phase hologram include: loading the phase hologram according to the second process parameters;

[0036] The steps for updating the phase hologram based on the material splash image and processing requirements include: updating the phase hologram based on the material splash image and the second process parameters.

[0037] Optionally, the step of updating the phase hologram based on the material spatter image and the second process parameters includes:

[0038] Identify material splash images to obtain identification results, including the width and height of the material splash;

[0039] The recognition results and the second process parameters are input into the neural network model to obtain the target hologram. Based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam can slot the wafer through the target hologram and meet the processing requirements.

[0040] Alternatively, based on the second process parameters, a target neural network model is selected from multiple neural network models; the recognition result is input into the target neural network model to obtain a target hologram; based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam can slot the wafer through the target hologram and meet the processing requirements; the target neural network model is one of multiple neural network models, and each neural network model corresponds to different second process parameters.

[0041] Optionally, the step of updating the phase hologram based on the material spatter image and the second process parameters includes:

[0042] Based on the recognition results of the material splash image and the second process parameters, a compensation strategy is determined; the recognition results include: the width and height of the material splash.

[0043] According to the compensation strategy, the corresponding target hologram is selected from the hologram comparison library; the hologram comparison library stores a variety of phase holograms, each phase hologram corresponds to a different compensation strategy, and the target hologram is one of the various phase holograms;

[0044] The selected target hologram is sent to the optical modulation module, which then uses the selected target hologram as a phase hologram to adjust the laser beam so that the slots opened by the laser beam on the wafer meet the processing requirements.

[0045] Optionally, the method further includes:

[0046] Based on the processing requirements, the third process parameters are obtained; the third process parameters include: grooving position, grooving speed, and grooving angle;

[0047] The wafer is moved relative to the laser beam according to the third process parameters to complete the grooving operation on the wafer.

[0048] The laser grooving method and system provided in this invention update the phase hologram in real time using material spatter images and second process parameters to achieve real-time dynamic adjustment of the laser beam energy distribution. This improves the stability and uniformity of laser beam grooving by dynamically compensating for the phase hologram's modulation effect, effectively suppressing the risk of chip edge chipping, and thus improving the quality of laser beam grooving of wafers. Attached Figure Description

[0049] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0050] Figure 1 This is a schematic structural diagram of a laser grooving system according to an embodiment of this application;

[0051] Figure 2 This is a schematic structural diagram of a laser grooving system according to an embodiment of this application;

[0052] in, Figure 1 and Figure 2 Arrowed line segments connecting adjacent modules or sub-modules indicate the beam transmission path, while line segments without arrows indicate the electrical connection relationship between adjacent modules or sub-modules. Detailed Implementation

[0053] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0055] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0056] In a first aspect, the present invention provides a laser grooving system, combined with Figure 1 The system includes: a laser source, an optical modulation module, a wafer movement module, and a detection and compensation module.

[0057] A laser source is used to emit a laser beam according to first process parameters. These first process parameters include, but are not limited to, laser power, pulse frequency, and pulse width. The first process parameters are determined by processing requirements, and the laser beam emitted by the laser source is directed onto the wafer on the wafer moving module through the optical modulation module.

[0058] It is understood that the processing requirements include the location and path of the grooves on the wafer surface, as well as data such as the groove depth and width. The first process parameter can be set manually according to the processing requirements, or the processing requirements can be input into the calculation module and generated by the calculation module; this embodiment does not specifically limit this.

[0059] The optical modulation module is used to load a phase hologram to adjust the energy distribution of the laser beam. Initially, the optical modulation module loads the phase hologram according to second process parameters, including but not limited to the laser beam energy distribution, which are determined by the processing requirements.

[0060] It is understandable that the current energy distribution of the laser beam represents the effect of the laser beam in creating grooves on the wafer surface.

[0061] The detection compensation module is communicatively connected to the optical modulation module and is used to monitor the material splashing at the processing point during the laser beam grooving process of the wafer to obtain a material splashing image. Based on the material splashing image, the optical modulation module is controlled to update the loaded phase hologram so that the groove opened by the laser beam on the wafer meets the processing requirements. The processing point is the point on the wafer where the laser beam irradiates.

[0062] Understandably, based on the material spatter image and the second process parameters, the optical modulation module updates the loaded phase hologram. This involves analyzing the material spatter image in real time using image processing algorithms to determine the current laser beam's processing effect on the wafer, and comparing this effect with the second process parameters. When a deviation from the preset value is detected, the detection compensation module dynamically adjusts the modulation effect of the optical modulation module to compensate and optimize the focal morphology and position of the laser beam. This real-time correction of the grooving process ensures that the grooves created by the laser beam on the wafer meet the processing requirements.

[0063] The laser grooving system provided in this embodiment updates the phase hologram in real time using material spatter images and second process parameters to achieve real-time dynamic adjustment of the laser beam's energy distribution. This improves the stability and uniformity of laser beam grooving by modulating the laser beam through dynamic compensation, effectively suppressing the risk of chip edge breakage and thus improving the quality of laser beam grooving of the wafer.

[0064] In a further optional embodiment of this embodiment, combined with Figure 2 The detection and compensation module includes an imaging submodule and a data processing submodule. The imaging submodule and the data processing submodule are communicatively connected. The imaging submodule captures an image of material spatter at the processing point location from the side of the wafer to obtain a material spatter image. The data processing submodule identifies the material spatter image and, based on the second process parameters and the identification result, updates the phase hologram loaded by the optical modulation module to ensure that the groove opened by the laser beam on the wafer meets the processing requirements. The identification result includes the width and height of the material spatter. The imaging submodule can be various cameras, such as a high-resolution visible light camera or an infrared camera. The data processing submodule is an industrial control computer. When the imaging submodule is an infrared camera, the data processing submodule can adjust the target hologram according to the heat distribution of the wafer at the groove location to improve the stability of the laser beam power.

[0065] It is understood that the width of the material splash mentioned above is the width of the material splash at the processing point location captured when the optical axis of the camera is parallel to the direction of wafer movement and is on the same plane as the laser beam directed toward the wafer surface. This includes the maximum width of the material splash. Similarly, the height of the material splash includes the maximum height of the material splash, which will not be elaborated in this embodiment.

[0066] In a further optional embodiment of this embodiment, the data processing submodule is configured with a neural network model. The data processing submodule obtains a target hologram by inputting a material splash image into the neural network model according to the second process parameters, and sends the target hologram to the optical modulation module so that the optical modulation module uses the target hologram as a phase hologram to adjust the laser beam.

[0067] It should be noted that the data input to the neural network model can be either the recognition result alone or the recognition result along with the second process parameters. When the data input to the neural network model is only the recognition result, multiple neural network models are configured in the data processing submodule. Each neural network model corresponds to a set of second process parameters, and the second process parameters corresponding to different neural network models are different. When the current recognition result is obtained, the corresponding neural network model is determined through the second process parameters, and the recognition result is input into the corresponding neural network model for processing so that the neural network model outputs the target hologram.

[0068] When the input data to the neural network model consists of material spatter images and second process parameters, the data processing submodule is configured with only one neural network model. In this case, the second process parameters and the material identification results need to be input into the neural network model together so that the neural network model outputs a target hologram.

[0069] It is understood that the specific structure and training process of the corresponding neural network model can be implemented using existing technologies, and this embodiment does not impose specific limitations on them. In this embodiment, the data processing submodule is configured with multiple neural network models, each corresponding to several mainstream second process parameters. This embodiment does not impose specific limitations on the mainstream second process parameters.

[0070] In a further optional embodiment of this example, the data processing submodule is configured with a hologram reference library. The hologram reference library stores multiple distinct holograms, with each hologram corresponding to a compensation strategy.

[0071] The data processing submodule is also used to determine a compensation strategy based on the recognition results of the material spatter image and the second process parameters; according to the compensation strategy, a corresponding target hologram is selected from the hologram comparison library, and the selected target hologram is sent to the optical modulation module so that the optical modulation module uses the selected target hologram as a phase hologram to adjust the laser beam so that the groove opened by the laser beam on the wafer meets the processing requirements.

[0072] Understandably, the compensation strategy involves comparing the current material spatter image recognition result with the second process parameter, and determining the specific details of how to adjust the energy distribution of the laser beam or the adjusted energy distribution of the laser beam based on the comparison result, so as to select a hologram that matches the compensation strategy from the hologram comparison library as the corresponding target hologram.

[0073] In a further optional embodiment of this embodiment, combined with Figure 2 The optical modulation module includes a spatial light modulator and a collimation submodule. The laser beam passes sequentially through the spatial light modulator and the collimation submodule.

[0074] The spatial light modulator is communicatively connected to the detection and compensation module and is used to load a phase hologram to adjust the energy distribution of the laser beam. Initially, the spatial light modulator loads the phase hologram according to the second process parameters. This initial loading period is understood to be a time when the detection and compensation module has not yet updated the module loaded by the spatial light modulator. The collimation submodule is used to align the center of the laser beam incident on the coaxial light module with the optical axis of the coaxial optical module.

[0075] Specifically, the spatial light modulator is used to phase modulate the laser beam. Customized phase modulation is achieved by loading a phase hologram, ultimately changing the energy distribution of the laser beam spot. The spatial light modulator can be an LCOS (Liquid Crystal on Silicon) device, which achieves phase modulation of the laser beam by adjusting the deflection of the liquid crystal array. The collimation submodule includes, but is not limited to, collimating lenses arranged on the side of the spatial light modulator facing the coaxial optical module.

[0076] In a further optional embodiment of this invention, the system further includes a beam expansion and collimation module. The laser beam emitted from the laser source passes sequentially through the beam expansion and collimation module, the optical modulation module, and the coaxial optical module. The beam expansion and collimation module is used to increase the diameter of the laser beam to fully utilize the liquid crystal on the spatial light modulator to modulate the laser beam, thereby improving the accuracy of laser beam adjustment and enhancing the grooving effect of the laser beam on the wafer.

[0077] Specifically, the beam expanding and collimating module increases the diameter of the laser beam to a certain extent according to processing requirements. This allows for a larger diameter laser beam without exceeding the side length of the liquid crystal array in the spatial light modulator, thus fully utilizing the performance of the spatial light modulator. The specific adjustment can be made according to the specific processing requirements. The components used to expand the laser beam include two reflective mirrors, which adjust the deflection angles of the laser beam in the x-axis and y-axis directions, respectively. The x-axis and y-axis directions are perpendicular to each other, and the planes containing the x-axis and y-axis are perpendicular to the laser beam emitted by the laser source.

[0078] In a further optional embodiment of this embodiment, combined with Figure 2 The system also includes a focusing module. The laser beam emitted by the laser source sequentially passes through the optical modulation module and the focusing module to illuminate the wafer on the wafer moving module.

[0079] It is understandable that the focusing module is a lens, enabling a smaller focused spot for wafer processing. Specifically, after focusing the laser beam, the focusing module achieves the target energy distribution at the focal point of the focusing module. This allows the focusing module to use the focused spot formed by focusing the laser beam to process the wafer, further enabling correction and compensation of the wafer surface processing. The target energy distribution is equivalent to performing a Fourier transform on the laser beam before it enters the focusing module; this will not be elaborated upon further in this embodiment.

[0080] In a further optional embodiment of this embodiment, combined with Figure 2 The wafer movement module moves the wafer relative to the laser beam according to third process parameters. These third process parameters include the direction and speed of wafer movement. It is understood that these third process parameters are determined by the processing requirements, and this embodiment does not impose specific limitations on them.

[0081] The laser grooving system provided in this embodiment dynamically adjusts the phase hologram loaded by the spatial light modulator based on the material spatter image, achieving real-time compensation and optimization of the laser beam and forming a closed-loop linkage mechanism for detection and compensation. By analyzing the processing effect of the laser beam on the wafer in real time and dynamically adjusting the energy distribution of the laser beam, the system ultimately ensures that the compensation and optimization actions are implemented instantly during processing, guaranteeing the stability and consistency of the processing effect and reducing process deviations caused by factors such as temperature, humidity, and material modification.

[0082] In a second aspect, the present invention provides a method for laser grooving, which is applied to the laser grooving system described in the first aspect.

[0083] The method includes steps S101 to S103.

[0084] Step S101: Load the phase hologram according to the processing parameters.

[0085] In a further optional embodiment of this embodiment, before the step of loading the phase hologram according to processing requirements, the method further includes:

[0086] Based on the processing requirements, the first process parameters and the second process parameters are obtained; the first process parameters include: laser power, pulse frequency and pulse width, and the second process parameters include the energy distribution of the laser beam.

[0087] According to the first process parameters, a laser beam is generated and directed towards the hologram loading module loaded with the phase hologram.

[0088] In a further optional embodiment of this embodiment, the step of loading the phase hologram according to the processing requirements includes: loading the phase hologram according to the second process parameters.

[0089] Step S102: Adjust the energy distribution of the laser beam using a phase hologram so that the adjusted laser beam can groove the wafer surface.

[0090] Step S103: Perform the grooving compensation step until the grooving of the wafer surface is completed.

[0091] The slotting compensation steps include steps S1031 to S1032.

[0092] Step S1031: Material spatter image of the laser beam during the wafer grooving process. The material spatter image is used to record the material spatter situation of the laser beam during the wafer grooving process.

[0093] Step S1032: Update the phase hologram according to the material spatter image and processing requirements so that the grooves opened by the laser beam on the wafer meet the processing requirements.

[0094] In a further optional embodiment of this embodiment, the step of updating the phase hologram according to the material splash image and processing requirements includes: updating the phase hologram according to the material splash image and the second process parameters.

[0095] In a further optional embodiment of this embodiment, the step of updating the phase hologram based on the material spatter image and the second process parameters includes:

[0096] The material spatter image is identified to obtain the identification result, which includes the width and height of the material spatter; the identification result and the second process parameters are input into a neural network model to obtain a target hologram through the neural network model; based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam can slot the wafer through the target hologram and meet the processing requirements;

[0097] Alternatively, based on the second process parameters, a target neural network model is selected from multiple neural network models; the recognition result is input into the target neural network model to obtain a target hologram; based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam can slot the wafer through the target hologram and meet the processing requirements; the target neural network model is one of multiple neural network models, and each neural network model corresponds to different second process parameters.

[0098] In a further optional embodiment of this embodiment, the step of updating the phase hologram based on the material spatter image and the second process parameters includes:

[0099] A compensation strategy is determined based on the recognition results of the material splash image and the second process parameters; the recognition results include: the width and height of the material splash.

[0100] According to the compensation strategy, the corresponding target hologram is selected from the hologram comparison library; the hologram comparison library stores a variety of phase holograms, each phase hologram corresponds to a different compensation strategy, and the target hologram is one of the various phase holograms;

[0101] The selected target hologram is sent to the optical modulation module, which then uses the selected target hologram as a phase hologram to adjust the laser beam so that the slots opened by the laser beam on the wafer meet the processing requirements.

[0102] In a further optional embodiment of this example, the method further includes:

[0103] Based on the processing requirements, the third process parameters are obtained; the third process parameters include: grooving position, grooving speed, and grooving angle;

[0104] The wafer is moved relative to the laser beam according to the third process parameters to complete the grooving operation on the wafer.

[0105] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0106] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0107] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A laser grooving system, characterized in that, The system includes: a laser source, an optical modulation module, a wafer movement module, and a detection and compensation module; The laser source is used to emit a laser beam; the laser beam emitted by the laser source illuminates the wafer on the wafer moving module through the optical modulation module; The wafer moving module is used to load the wafer and move the wafer relative to the laser beam so that the laser beam can make grooves on the wafer surface. The optical modulation module is used to load a phase hologram to adjust the energy distribution of the laser beam using the phase hologram; initially, the optical modulation module loads the phase hologram according to a second process parameter, which includes the energy distribution of the laser beam and is determined by the processing requirements; The detection and compensation module is communicatively connected to the optical modulation module and is used to monitor the material splashing at the processing point during the laser beam grooving process of the wafer to obtain a material splashing image. Based on the material splashing image, the optical modulation module is controlled to update the loaded phase hologram so that the groove opened by the laser beam on the wafer meets the processing requirements. The processing point is the point on the wafer where the laser beam irradiates.

2. The system according to claim 1, characterized in that, The detection compensation module includes an imaging submodule and a data processing submodule, and the imaging submodule and the data processing submodule are communicatively connected. The imaging submodule is used to capture images of material spatter at the processing point location from the side of the wafer to obtain material spatter images; The data processing submodule is used to identify material spatter images and update the phase hologram loaded by the optical modulation module according to the second process parameters and the identification result of the material spatter images, so that the grooves opened by the laser beam on the wafer meet the processing requirements. The identification results include the width and height of the material splash.

3. The system according to claim 2, characterized in that, The data processing submodule is configured with a neural network model. Based on the second process parameters, the data processing submodule obtains a target hologram by inputting the recognition result into the neural network model, and sends the target hologram to the optical modulation module so that the optical modulation module uses the target hologram as the phase hologram to adjust the laser beam.

4. The system according to claim 2, characterized in that, The data processing submodule is equipped with a hologram comparison library, which stores multiple distinct holograms, each corresponding to a compensation strategy. The data processing submodule is further configured to determine a compensation strategy based on the recognition result and the second process parameters, select a corresponding target hologram from the hologram comparison library according to the compensation strategy, and send the selected target hologram to the optical modulation module so that the optical modulation module uses the selected target hologram as the phase hologram to adjust the laser beam so that the slots opened by the laser beam on the wafer meet the processing requirements.

5. The system according to claim 1, characterized in that, The system also includes: a beam expanding and collimating module; The laser beam emitted by the laser source passes sequentially through the beam expanding and collimating module, the optical modulation module, and the coaxial optical module; The beam expanding and collimating module is used to increase the diameter of the laser beam and reduce the divergence angle of the laser beam.

6. The system according to claim 1, characterized in that, The system also includes: a focusing module; The laser beam emitted by the laser source passes through the optical modulation module and the focusing module in sequence and shines on the wafer on the wafer moving module; the focusing module is used to focus the laser beam to a specified position on the wafer surface.

7. The system according to claim 1, characterized in that, The optical modulation module includes a spatial light modulator and a collimation submodule, and the laser beam passes through the spatial light modulator and the collimation submodule in sequence. The spatial light modulator is communicatively connected to the detection and compensation module and is used to load a phase hologram to adjust the energy distribution of the laser beam; the spatial light modulator loads the phase hologram according to the second process parameters at the beginning. The collimation submodule is used to make the emitted laser beam parallel to the laser beam of the collimation submodule.

8. A method for laser grooving, characterized in that, The method includes: According to the processing requirements, load the phase hologram; The energy distribution of the laser beam is adjusted by the phase hologram, so that the adjusted laser beam can groove the wafer surface. Perform the grooving compensation step until the grooving of the wafer surface is completed; The slotting compensation step includes: Acquire images of material spatter during the wafer grooving process using a laser beam. These images are used to record the material spatter situation during the wafer grooving process. The phase hologram is updated based on the material spatter image and processing requirements so that the grooves opened on the wafer by the laser beam meet the processing requirements. Before the step of loading the phase hologram according to processing requirements, the method further includes: obtaining a first process parameter and a second process parameter according to processing requirements; the first process parameter includes: laser power, pulse frequency, and pulse width, and the second process parameter includes the energy distribution of the laser beam; generating a laser beam according to the first process parameter, the laser beam being directed towards the hologram loading module loaded with the phase hologram; the step of loading the phase hologram according to processing requirements includes: loading the phase hologram according to the second process parameter; the step of updating the phase hologram according to the material spatter image and processing requirements includes: updating the phase hologram according to the material spatter image and the second process parameter.

9. The method according to claim 8, characterized in that, The step of updating the phase hologram based on the material spatter image and the second process parameters includes: Identify material splash images to obtain identification results, the identification results including: the width and height of the material splash; The identification result and the second process parameters are input into a neural network model to obtain a target hologram. Based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam can slot the wafer through the target hologram and meet the processing requirements. Alternatively, based on the second process parameters, a target neural network model is selected from multiple neural network models; the recognition result is input into the target neural network model to obtain a target hologram; based on the target hologram, the phase hologram in the hologram loading module is updated so that the laser beam passes through the target hologram to slot the wafer and meet the processing requirements; the target neural network model is one of multiple neural network models, and each neural network model corresponds to different second process parameters.

Images