Photovoltaic silicon wafer diffusion furnace

Abstract

The invention belongs to the technical field of photovoltaic power generation, and discloses a photovoltaic silicon wafer diffusion furnace which comprises a base and further comprises a processing assembly arranged at the top of the base; and the gas injection assembly is arranged in the treatment assembly and is used for injecting reaction gas into the treatment assembly. The dispersing pipe is located in the middle between the two adjacent silicon wafers, the one-way valve is in an open state under pressure along with gradual increase of air pressure in the gas gathering cavity and the fixed pipe, and reaction gas flows between the two adjacent silicon wafers, so that the reaction gas can be in uniform contact with the surfaces of the silicon wafers; the gas concentration of the area close to the gas inlet is prevented from being high, the concentration of the area away from the gas inlet is prevented from being gradually reduced, the consistent reaction rate of the surface of the silicon wafer is guaranteed, the deviation of the film thickness and doping uniformity is avoided, and the conversion efficiency of the photovoltaic silicon wafer and the stability of batch production quality are guaranteed.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of photovoltaic power generation, and particularly relates to a photovoltaic silicon wafer diffusion furnace. BACKGROUND

[0002] The photovoltaic silicon wafer is a core basic material of solar photovoltaic power generation technology, refers to a thin-plate-shaped semiconductor device processed from high-purity silicon material through a specific process, and is mainly used for manufacturing solar cells. The diffusion furnace vaporizes a doping source (such as boron tribromide or boron trichloride) through high temperature (usually 800-1000 DEG C) to diffuse phosphorus (P) or boron (B) atoms into the surface layer of the silicon wafer, changes the conductive type (N type or P type) of the silicon, and forms a PN junction.

[0003] In the production process of the photovoltaic silicon wafer, the thin film deposition process of the diffusion furnace has strict requirements on the uniformity of the thickness and quality of the silicon wafer surface. However, in the batch production mode of the existing diffusion furnace, due to the large space in the furnace and the limitation of the gas distribution mechanism, the reaction gas (such as phosphorus source or boron source gas) is difficult to realize uniform diffusion when being introduced into the furnace chamber. Specifically, the gas concentration is high near the gas inlet, and the concentration gradually decreases away from the gas inlet. This gas concentration gradient will cause the reaction rate of the silicon wafer surface to be inconsistent, thereby causing the deviation of the film thickness and the doping uniformity, and finally affecting the conversion efficiency of the photovoltaic silicon wafer and the stability of the batch production quality. Therefore, the present application provides a photovoltaic silicon wafer diffusion furnace. SUMMARY

[0004] To solve the problems in the background art, the application provides a photovoltaic silicon wafer diffusion furnace, which solves the problem that the existing photovoltaic silicon wafer diffusion furnace has high gas concentration near the gas inlet, and the concentration gradually decreases away from the gas inlet. This gas concentration gradient will cause the reaction rate of the silicon wafer surface to be inconsistent, thereby causing the deviation of the film thickness and the doping uniformity.

[0005] To achieve the above-mentioned purpose, the application provides the following technical scheme: a photovoltaic silicon wafer diffusion furnace, comprising a base, further comprising: a processing assembly arranged on the top of the base; a gas injection assembly arranged in the interior of the processing assembly, used for injecting reaction gas into the processing assembly; a receiving assembly movably installed in the interior of the processing assembly; a supporting assembly slidably arranged in the processing assembly along the receiving assembly, used for placing photovoltaic silicon wafers; The gas injection assembly comprises a dispersion box fixed to the inner wall of the processing assembly, a first movable ring movably sleeved in the interior of the dispersion box, and a gas gathering cavity formed between the dispersion box and the first movable ring. The first movable ring is fixedly fitted with a fixed tube that communicates with the gas-gathering cavity. A transmission rod is movably sleeved inside the fixed tube. The transmission rod has a hollow structure, and a dispersion tube is connected to the bottom of the transmission rod. The photovoltaic silicon wafers are placed on the support assembly and placed inside the processing assembly along the receiving assembly. The reaction gas is injected into the gas gathering chamber. As the internal gas pressure gradually increases, the drive rod is pushed out of the fixed tube, so that the dispersion tube is located between two adjacent photovoltaic silicon wafers.

[0006] Preferably, the processing assembly includes a diffusion furnace body fixed to the top of the base, and the inner wall of the diffusion furnace body is provided with a guide ring groove.

[0007] Preferably, the receiving component includes a guide rail that slides within a guide ring groove via a second roller, a support member that is fixed to the guide rail via a connector, and the top of the support member that moves within the guide ring groove via a third roller; A transmission ring is fixedly installed at the end of the guide rail and the support member, and the transmission ring is fixedly connected to the output rod of the motor.

[0008] Preferably, the support assembly includes a support plate, which slides along a guide rail via a first roller, and the support plate is fixedly equipped with equidistant support members for supporting photovoltaic silicon wafers, and baffles are fixedly installed at both ends of the top of the support plate. The top of the base is fixed with a guide rail.

[0009] Preferably, the inner wall of the guide rail is provided with a groove; The photovoltaic silicon wafer is placed on the receiving part, and the support plate is slid along the guide rail through the first roller and placed inside the diffusion furnace body. The first roller is located in the groove.

[0010] Preferably, when the first roller is located in the groove, the dispersion tube, the transmission rod, and the fixing tube remain vertical to the midpoint between the two adjacent photovoltaic silicon wafers, and the transmission rod extends to push the dispersion tube to the middle of the two adjacent photovoltaic silicon wafers.

[0011] Preferably, the exhaust assembly includes a collection box fixed to the side of the transmission ring, a second movable ring movably sleeved on the side of the collection box, and an exhaust pipe communicating with the inside of the collection box fixed on the side of the second movable ring, the exhaust pipe passing through the outside of the diffusion furnace body.

[0012] Preferably, air intake pipes are fixedly installed at the four corners of the side of the collection box, and air inlets are equidistantly opened on the outside of the four air intake pipes, with the air inlets on each air intake pipe located at the four corners of the photovoltaic silicon wafer.

[0013] Preferably, the abutment component includes a guide rod fixed to the support member, a transmission plate movably sleeved on the guide rod, and a reset elastic member for pulling the transmission plate sleeved on the guide rod; The bottom of the transmission plate is fixedly equipped with first abutment members at equal intervals. When the photovoltaic silicon wafer is located inside the diffusion furnace body, the first abutment members remain vertical to the photovoltaic silicon wafer.

[0014] Preferably, sleeves are fixedly installed at both ends of the transmission plate, and a piston rod is movably sleeved on the sleeve. The top of the piston rod is fixedly connected to the support member, and the piston rod is a hollow structure. The transmission rods at both ends are provided with a first hole, and the fixed tube is provided with a second hole. The fixed tube is connected to the piston rod through a connecting tube. A return spring is sleeved on the outside of the transmission rod in the middle, and the dispersion tube in the middle is connected to the dispersion tube at the outer end through a U-shaped docking frame; Initially, the first hole and the second hole are connected, and the reaction gas in the dispersion box enters the sleeve through the fixed pipe, the second hole, the connecting pipe and the piston rod.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: This invention uses a dispersion tube located in the middle between two adjacent silicon wafers. As the gas pressure in the gas-gathering chamber and the fixed tube gradually increases, the one-way valve is opened under pressure, and the gas is discharged through both ends of the dispersion tube. This allows the sprayed reactive gas to diffuse evenly in all directions along the middle between the two adjacent silicon wafers. Because the reactive gas flows between the two adjacent silicon wafers, it can contact the silicon wafer surface evenly, avoiding a situation where the gas concentration is high near the gas inlet and gradually decreases in the area away from the gas inlet. This ensures a consistent reaction rate on the silicon wafer surface, thereby avoiding deviations in film thickness and doping uniformity, and ensuring the stability of photovoltaic silicon wafer conversion efficiency and batch production quality. This invention involves placing photovoltaic silicon wafers on a support assembly, which slides along a guide rail inside the diffusion furnace body. A dispersion tube is located between two adjacent photovoltaic silicon wafers. The reaction gas is discharged from the middle of the two adjacent photovoltaic silicon wafers through the dispersion tube and diffuses outwards, so that the reaction gas is in uniform contact with the surface of the photovoltaic silicon wafer. Since the photovoltaic silicon wafer is square, during the injection of the reaction gas, the motor drives the transmission ring, connecting parts and guide rail to rotate along the guide ring groove. During the rotation, the photovoltaic silicon wafer rotates synchronously, eliminating diffusion differences in azimuth angle and ensuring consistent reaction effect of the photovoltaic silicon wafer. This invention uses a support assembly that enters the diffusion furnace body along the receiving assembly, keeping the photovoltaic silicon wafer and the first contact member vertical. The gas injection device introduces the reaction gas into the dispersion box. Initially, the first and second holes are connected to the connecting pipe. At this time, the gas in the dispersion box enters the sleeve through the connecting pipe and the piston rod, and the gas pressure gradually increases. This pushes the transmission plate to move down along the guide rod, stretching and resetting the elastic member, so that the first contact member contacts the outside of the photovoltaic silicon wafer. The photovoltaic silicon wafer is fixed by the support assembly and the contact assembly, and the reaction effect of the photovoltaic silicon wafer can be ensured by the rotation of the motor. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the external planar structure of the present invention; Figure 2 This is a schematic diagram of the internal structure of the diffusion furnace body of the present invention; Figure 3 This is a schematic diagram of the internal planar structure of the present invention; Figure 4 For the present invention Figure 3 Enlarged structural diagram at point A in the middle; Figure 5 This is a schematic diagram of the merging structure of the exhaust assembly and the contact assembly of the present invention; Figure 6 This is a schematic diagram of the cooperation structure between the processing component and the support component of the present invention; Figure 7 This is a schematic diagram showing the disassembled structure of the processing component, support component, and receiving component of the present invention; Figure 8 This is a schematic diagram of the disassembled structure of the support component and the receiving component of the present invention; Figure 9 This is a schematic diagram of the cross-sectional structure of the diffusion furnace of the present invention; Figure 10 This is a schematic diagram of the merging structure of the exhaust component, the contact component, and the receiving component of the present invention.

[0017] In the diagram: 1. Base; 2. Processing assembly; 21. Diffusion furnace body; 22. Guide ring groove; 3. Gas injection assembly; 31. Dispersion box; 32. First movable ring; 33. Fixed pipe; 34. Transmission rod; 35. One-way valve; 36. Dispersion pipe; 37. First hole; 38. Second hole; 39. U-shaped docking frame; 4. Exhaust assembly; 41. Gathering box; 42. Exhaust pipe; 43. Intake pipe; 44. Inlet port; 45. Second movable ring 5. Abutting component; 51. Transmission plate; 52. First abutting element; 53. Guide rod; 54. Reset elastic element; 55. Sleeve; 56. Piston rod; 57. Connecting pipe; 6. Supporting component; 61. Support plate; 62. Receiving element; 63. Baffle; 64. First roller; 7. Receiving component; 71. Guide rail; 72. Second roller; 73. Transmission ring; 74. Connecting element; 75. Supporting element; 76. Third roller; 77. Groove. Detailed Implementation

[0018] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0019] like Figures 1 to 10 As shown, the present invention provides a photovoltaic silicon wafer diffusion furnace, including a base 1, and further comprising: Processing component 2 is disposed on the top of base 1; Gas injection component 3 is disposed inside the processing component 2 and is used to inject reaction gas into the processing component 2; Component 7 is movably installed inside processing component 2; Support component 6 is slidably placed inside processing component 2 along receiving component 7. Support component 6 is used to place photovoltaic silicon wafers. Among them, the gas injection component 3 includes a dispersion box 31 fixed to the inner wall of the processing component 2, and a first movable ring 32 is movably sleeved inside the dispersion box 31, and the dispersion box 31 and the first movable ring 32 form a gas gathering cavity. A fixed pipe 33 that communicates with the gas-gathering cavity is fixedly installed on the first movable ring 32. A transmission rod 34 is movably sleeved inside the fixed pipe 33. The transmission rod 34 has a hollow structure and a dispersion pipe 36 is connected to the bottom of the transmission rod 34. The photovoltaic silicon wafer is placed on the support component 6 and placed in the processing component 2 along the receiving component 7. The reaction gas is injected into the gas gathering chamber. As the internal gas pressure gradually increases, the transmission rod 34 is pushed out from the fixed tube 33, so that the dispersion tube 36 is located between two adjacent photovoltaic silicon wafers.

[0020] The photovoltaic silicon wafer is placed on the support assembly 6, and the support assembly 6 is pushed along the receiving assembly 7 into the processing assembly 2. The reaction gas is pumped into the gas-gathering cavity formed between the dispersion box 31 and the first movable ring 32 through the gas injection device. As the internal gas pressure gradually increases, multiple transmission rods 34 are pushed to extend synchronously into the fixed tube 33. The dispersion tube 36 is located in the middle between two adjacent silicon wafers. As the gas pressure in the gas-gathering cavity and the fixed tube 33 gradually increases, the one-way valve 35 is opened under pressure, and the gas is discharged through both ends of the dispersion tube 36, so that the sprayed reaction gas diffuses evenly in all directions along the middle between two adjacent silicon wafers. Because the reaction gas flows along the middle between two adjacent silicon wafers, the reaction gas can contact the silicon wafer surface evenly, avoiding a high gas concentration near the gas inlet and a gradually decreasing concentration in the area away from the gas inlet. This ensures a consistent reaction rate on the silicon wafer surface, thereby avoiding deviations in film thickness and doping uniformity, and ensuring the stability of photovoltaic silicon wafer conversion efficiency and batch production quality.

[0021] like Figure 7 and Figure 8 As shown, the processing component 2 includes a diffusion furnace body 21 fixed to the top of the base 1, and a guide ring groove 22 is provided on the inner wall of the diffusion furnace body 21. The receiving component 7 includes a guide rail 71 that slides within the guide ring groove 22 via a second roller 72. A support member 75 is fixedly mounted on the guide rail 71 via a connector 74. The top of the support member 75 moves within the guide ring groove 22 via a third roller 76. A transmission ring 73 is fixedly installed at the end of the guide rail 71 and the support member 75, and the transmission ring 73 is fixedly connected to the output rod of the motor.

[0022] The photovoltaic silicon wafer is placed on the support assembly 6, and the support assembly 6 slides along the guide rail 71 inside the diffusion furnace body 21. The dispersion tube 36 is located between two adjacent photovoltaic silicon wafers. The reaction gas is discharged from the middle of the two adjacent photovoltaic silicon wafers through the dispersion tube 36 and diffuses to the surrounding area, so that the reaction gas is in uniform contact with the surface of the photovoltaic silicon wafer. Since the photovoltaic silicon wafers are square, during the injection of the reaction gas, the motor drives the transmission ring 73, the connector 74 and the guide rail 71 to rotate along the guide ring groove 22. At the same time, the fixed tube 33 and the first movable ring 32 rotate along the dispersion box 31, so that the dispersion tube 36 is always located in the middle of two adjacent photovoltaic silicon wafers. During the rotation, the photovoltaic silicon wafers are driven to rotate synchronously (rotating at a low speed of 2-5 rpm), thereby eliminating the diffusion difference in azimuth angle and ensuring that the reaction effect of the photovoltaic silicon wafers is consistent.

[0023] like Figures 6 to 8As shown, the support assembly 6 includes a support plate 61, which slides along the guide rail 71 via a first roller 64. Supporting members 62 for supporting photovoltaic silicon wafers are fixedly mounted on the support plate 61 at equal intervals, and baffles 63 are fixedly mounted at both ends of the top of the support plate 61. A guide rail is fixedly mounted on the top of base 1; The inner wall of the guide rail 71 is provided with a groove 77; The photovoltaic silicon wafer is placed on the receiving part 62, and the support plate 61 is slidably placed inside the diffusion furnace body 21 along the guide rail 71 via the first roller 64. The first roller 64 is located in the groove 77. When the first roller 64 is located in the groove 77, the dispersion tube 36, the transmission rod 34 and the fixed tube (33) remain vertical to the midpoint between the two adjacent photovoltaic silicon wafers, and the transmission rod 34 extends to push the dispersion tube 36 to the middle of the two adjacent photovoltaic silicon wafers.

[0024] The support plate 61 is located on the guide rail at the top of the base 1 via the first roller 64. The photovoltaic silicon wafers are placed sequentially on the receiving member 62. The support plate 61 is pushed through the first roller 64 along the guide rail and guide rail 71 into the interior of the diffusion furnace body 21, so that the photovoltaic silicon wafers are placed inside the diffusion furnace body 21. The first roller 64 is located inside the groove 77, so that the dispersion tube 36 is kept vertical with the middle of the two adjacent photovoltaic silicon wafers. At this time, the reaction gas pushes the transmission rod 34 to make the dispersion tube 36 located in the middle of the two adjacent photovoltaic silicon wafers, so that the reaction gas can be evenly injected into the diffusion furnace body 21.

[0025] like Figure 6 , Figure 9 and Figure 10 As shown, the exhaust assembly 4 includes a collection box 41 fixedly mounted on the side of the transmission ring 73. A second movable ring 45 is movably sleeved on the side of the collection box 41. An exhaust pipe 42 communicating with the inside of the collection box 41 is fixedly mounted on the side of the second movable ring 45. The exhaust pipe 42 passes through the outside of the diffusion furnace body 21. The four corners of the side of the collection box 41 are fixed with air intake pipes 43, and air inlets 44 are equidistantly opened on the outside of the four air intake pipes 43. The air inlets 44 on each air intake pipe 43 are located at the four corners of the photovoltaic silicon wafer.

[0026] The photovoltaic silicon wafer is placed inside the diffusion furnace body 21. Reactive gas is injected into the diffusion furnace body 21 through the gas injection component 3. The reactive gas flows between two adjacent photovoltaic silicon wafers. The motor drives the gas injection component 3 and the photovoltaic silicon wafer to rotate. The suction pipe 43 is set at the four corners of the photovoltaic silicon wafer. The gas extraction device is connected to the exhaust pipe 42. Gas is extracted from the diffusion furnace body 21 through the collection box 41, the suction pipe 43 and the air inlet 44. The reactive gas flowing between two adjacent photovoltaic silicon wafers is diffused along the center of the photovoltaic silicon wafer to the surrounding area under negative pressure, so that the reactive gas moves evenly along the surface of the photovoltaic silicon wafer and improves the reaction effect of the photovoltaic silicon wafer.

[0027] like Figure 4 , Figure 5 and Figure 10 As shown, the abutment component 5 includes a guide rod 53 fixed on the support member 75, a transmission plate 51 movably sleeved on the guide rod 53, and a reset elastic member 54 for pulling the transmission plate 51 sleeved on the guide rod 53. The bottom of the transmission plate 51 is fixedly equipped with first contact members 52 at equal intervals. When the photovoltaic silicon wafer is located inside the diffusion furnace body 21, the first contact members 52 remain vertical to the photovoltaic silicon wafer. Sleeves 55 are fixedly installed at both ends of the transmission plate 51. A piston rod 56 is movably sleeved on the sleeve 55. The top of the piston rod 56 is fixedly connected to the support member 75. The piston rod 56 is a hollow structure. The transmission rods 34 at both ends are provided with a first hole 37, and the fixed tube 33 is provided with a second hole 38. The fixed tube 33 is connected to the piston rod 56 through the connecting tube 57. A return spring is sleeved on the outside of the transmission rod 34 in the middle, and the dispersion tube 36 in the middle is connected to the dispersion tube 36 at the outer end through the U-shaped docking frame 39. Initially, the first hole 37 and the second hole 38 are connected, and the reaction gas in the dispersion box 31 enters the sleeve 55 through the fixed pipe 33, the second hole 38, the connecting pipe 57 and the piston rod 56.

[0028] The photovoltaic silicon wafer is held vertically by the support component 6 and the receiving component 7, and the reaction gas is introduced into the dispersion box 31. Initially, the first hole 37 and the second hole 38 are connected to the connecting pipe 57. At this time, the gas in the dispersion box 31 enters the sleeve 55 through the connecting pipe 57 and the piston rod 56. The gas pressure gradually increases, pushing the transmission plate 51 down along the guide rod 53 and stretching the reset elastic member 54, so that the first contact member 52 abuts against the outside of the photovoltaic silicon wafer. When the bottom end of the piston rod 56 contacts the upper end of the sleeve 55, the pressure in the fixed pipe 33 continues to increase, pushing multiple transmission rods 34 downward and compressing the reset spring. The first hole 37 and the second hole 38 are disconnected, so that the dispersion pipe 36 is located in the middle of two adjacent photovoltaic silicon wafers. The one-way valve 35 is opened under pressure, and the reaction gas can be discharged between the two adjacent photovoltaic silicon wafers.

[0029] Meanwhile, the receiving part 62 and the first contacting part 52 can be replaced with arc grooves for clamping circular photovoltaic silicon wafers.

[0030] After the photovoltaic silicon wafer reaction is completed, the pressure relief valve on the dispersion box 31 is opened, and the air pressure in the dispersion box 31 is discharged. The transmission rod 34 enters the transmission rod 34 under the action of the reset spring. At this time, the first hole 37 and the second hole 38 are connected. The transmission plate 51 moves upward along the guide rod 53 under the action of the reset elastic member 54, so that the first contact member 52 is separated from the photovoltaic silicon wafer, and the photovoltaic silicon wafer can be taken out.

[0031] Working principle and usage process of this invention: The photovoltaic silicon wafer is held vertically by the support component 6 and the receiving component 7, which enters the diffusion furnace body 21. The gas injection device introduces the reaction gas into the dispersion box 31. Initially, the first hole 37 and the second hole 38 are connected to the connecting pipe 57. At this time, the gas in the dispersion box 31 enters the sleeve 55 through the connecting pipe 57 and the piston rod 56. The gas pressure gradually increases, pushing the transmission plate 51 down along the guide rod 53 and stretching the reset elastic member 54, so that the first contact member 52 abuts against the outside of the photovoltaic silicon wafer. When the bottom end of the piston rod 56 contacts the upper end of the sleeve 55, the pressure in the fixed pipe 33 continues to increase, pushing the reaction gas into the sleeve 55. Multiple transmission rods 34 are pushed down and the return spring is compressed, disconnecting the first hole 37 from the second hole 38, so that the dispersion tube 36 is located in the middle of two adjacent photovoltaic silicon wafers. The one-way valve 35 is opened under pressure, and the reaction gas can be discharged between the two adjacent photovoltaic silicon wafers. The sprayed reaction gas diffuses evenly in all directions along the middle between the two adjacent silicon wafers. Since the reaction gas flows between the two adjacent silicon wafers, the reaction gas can contact the silicon wafer surface evenly, avoiding a high gas concentration near the air inlet and a gradually decreasing concentration in the area away from the air inlet, thus ensuring a consistent reaction rate on the silicon wafer surface. The photovoltaic silicon wafer is placed inside the diffusion furnace body 21. Reactive gas is injected into the diffusion furnace body 21 through the gas injection component 3. The reactive gas flows between two adjacent photovoltaic silicon wafers. The motor drives the gas injection component 3 and the photovoltaic silicon wafer to rotate. The suction pipe 43 is set at the four corners of the photovoltaic silicon wafer. The gas extraction device is connected to the exhaust pipe 42. Gas is extracted from the diffusion furnace body 21 through the collection box 41, the suction pipe 43 and the air inlet 44. The reactive gas flowing between two adjacent photovoltaic silicon wafers is diffused along the center of the photovoltaic silicon wafer to the surrounding area under negative pressure, so that the reactive gas moves evenly along the surface of the photovoltaic silicon wafer and improves the reaction effect of the photovoltaic silicon wafer.

[0032] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0033] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A photovoltaic silicon wafer diffusion furnace, comprising a base (1), characterized in that, Also includes: Processing component (2), the processing component (2) being disposed on the top of the base (1); Gas injection assembly (3), which is disposed inside the processing assembly (2) and is used to inject reactive gas into the processing assembly (2); A receiving component (7) is movably installed inside the processing component (2); Support component (6), which slides along receiving component (7) and is placed inside processing component (2), the support component (6) being used to place photovoltaic silicon wafers; The gas injection component (3) includes a dispersion box (31) fixed to the inner wall of the processing component (2), and a first movable ring (32) is movably sleeved inside the dispersion box (31). The dispersion box (31) and the first movable ring (32) form a gas-gathering cavity. The first movable ring (32) is fixedly fitted with a fixed tube (33) that communicates with the gas-gathering cavity. A transmission rod (34) is movably sleeved inside the fixed tube (33). The transmission rod (34) is a hollow structure, and a dispersion tube (36) is connected to the bottom of the transmission rod (34). The photovoltaic silicon wafer is placed on the support component (6) and placed in the processing component (2) along the receiving component (7). The reaction gas is injected into the gas gathering chamber. As the internal gas pressure gradually increases, the transmission rod (34) is pushed out from the fixed tube (33), so that the dispersion tube (36) is located between two adjacent photovoltaic silicon wafers.

2. The photovoltaic silicon wafer diffusion furnace according to claim 1, characterized in that: The processing component (2) includes a diffusion furnace body (21) fixed to the top of the base (1), and the inner wall of the diffusion furnace body (21) is provided with a guide ring groove (22).

3. The photovoltaic silicon wafer diffusion furnace according to claim 2, characterized in that: The receiving component (7) includes a guide rail (71) that slides in the guide ring groove (22) via a second roller (72), and a support member (75) is fixedly mounted on the guide rail (71) via a connector (74). The top of the support member (75) moves within the guide ring groove (22) via a third roller (76). The guide rail (71) and the support member (75) are fixedly fitted with a transmission ring (73), which is fixedly connected to the output rod of the motor.

4. The photovoltaic silicon wafer diffusion furnace according to claim 3, characterized in that: The support assembly (6) includes a support plate (61), which slides along a guide rail (71) via a first roller (64). The support plate (61) is fixedly equipped with a support member (62) for supporting photovoltaic silicon wafers at equal intervals, and baffles (63) are fixedly installed at both ends of the top of the support plate (61). The top of the base (1) is fixed with a guide rail.

5. The photovoltaic silicon wafer diffusion furnace according to claim 4, characterized in that: The inner wall of the guide rail (71) is provided with a groove (77); The photovoltaic silicon wafer is placed on the receiving part (62), and the support plate (61) slides along the guide rail (71) through the first roller (64) inside the diffusion furnace body (21). The first roller (64) is located in the groove (77).

6. The photovoltaic silicon wafer diffusion furnace according to claim 5, characterized in that: When the first roller (64) is located in the groove (77), the dispersion tube (36), the transmission rod (34) and the fixed tube (33) remain vertical to the midpoint between the two adjacent photovoltaic silicon wafers, and the transmission rod (34) extends to push the dispersion tube (36) to the middle of the two adjacent photovoltaic silicon wafers.

7. The photovoltaic silicon wafer diffusion furnace according to claim 3, characterized in that: The exhaust assembly (4) includes an agglomeration box (41) fixed to the side of the transmission ring (73), a second movable ring (45) is movably sleeved on the side of the agglomeration box (41), and an exhaust pipe (42) communicating with the inside of the agglomeration box (41) is fixed on the side of the second movable ring (45), the exhaust pipe (42) passing through the outside of the diffusion furnace body (21).

8. The photovoltaic silicon wafer diffusion furnace according to claim 7, characterized in that: The four corners of the side of the gathering box (41) are fixed with air intake pipes (43), and the four air intake pipes (43) are provided with air inlet holes (44) at equal intervals on the outside. The air inlet holes (44) on each air intake pipe (43) are located at the four corners of the photovoltaic silicon wafer.

9. The photovoltaic silicon wafer diffusion furnace according to claim 3, characterized in that: The abutment component (5) includes a guide rod (53) fixed on the support member (75), a transmission plate (51) is movably sleeved on the guide rod (53), and a reset elastic member (54) for pulling the transmission plate (51) is sleeved on the guide rod (53). The bottom of the transmission plate (51) is fixedly equipped with a first contact member (52) at equal intervals. When the photovoltaic silicon wafer is located in the diffusion furnace body (21), the first contact member (52) remains vertical to the photovoltaic silicon wafer.

10. The photovoltaic silicon wafer diffusion furnace according to claim 9, characterized in that: The transmission plate (51) is fixedly fitted with sleeves (55) at both ends, and a piston rod (56) is movably sleeved on the sleeves (55). The top of the piston rod (56) is fixedly connected to the support member (75), and the piston rod (56) is a hollow structure. The transmission rods (34) at both ends are provided with a first hole (37), and the fixed tube (33) is provided with a second hole (38). The fixed tube (33) is connected to the piston rod (56) through the connecting tube (57). A return spring is sleeved on the outside of the transmission rod (34) in the middle, and the dispersion tube (36) in the middle is connected to the dispersion tube (36) at the outer end through a U-shaped docking frame (39); Initially, the first hole (37) and the second hole (38) are connected, and the reaction gas in the dispersion box (31) enters the sleeve (55) through the fixed pipe (33), the second hole (38), the connecting pipe (57) and the piston rod (56).

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