Substrate supporting device

Abstract

The present invention relates to a substrate support device which can guide a substrate to a predetermined position and support the substrate at the predetermined position even when the substrate is placed at a position shifted from the predetermined position. The substrate supporting apparatus includes: a plurality of supporting bodies capable of supporting a substrate at a predetermined substrate supporting position; each support body has at least one contact surface capable of being in contact with the side surface of the substrate to support the substrate, and rotates around the rotating shaft, and reaches a support position for supporting the substrate from a position at which the contact surface is positioned above the support surface; while the support body moves from the upper position to the support position, the at least one contact surface is brought into contact with the substrate placed at a position offset from the substrate support position and guides the substrate to the substrate support position.

Description

Technical Field

[0001] This invention relates to a substrate support device for supporting a substrate, and more particularly to a substrate support device used in substrate processing apparatuses such as ion implantation apparatuses. Background Technology

[0002] Generally, ion implantation equipment used in semiconductor manufacturing processes includes a substrate support device that supports the substrate within a processing chamber. As an example of such a substrate support device, Patent Document 1 discloses an electrostatic chuck equipped with a mechanical clamp. This electrostatic chuck electrostatically attracts the substrate placed on its clamping surface and also holds the substrate by mechanical clamping. Therefore, this electrostatic chuck can hold the substrate even when the electrostatic attraction force is insufficient.

[0003] This electrostatic chuck moves between a horizontal and a non-horizontal position by rotating. The horizontal position is when the substrate is placed on the clamping surface and the clamping surface is facing horizontally. The non-horizontal position is when the substrate, fixed to the clamping surface, faces the ion beam. Furthermore, even in the non-horizontal position, this electrostatic chuck can fix the substrate using only mechanical clamping.

[0004] [Existing Technical Documents]

[0005] [Patent Literature]

[0006] Patent Document 1: U.S. Patent No. 8941968. Summary of the Invention

[0007] [The problem that the invention aims to solve]

[0008] The electrostatic chuck in Patent Document 1 is configured such that multiple mechanical clamps are arranged around the clamping surface, each mechanical clamp rotating around a predetermined axis of rotation, and holding the substrate in a predetermined position by pushing the substrate from the outside. However, since each mechanical clamp is configured to rotate in the direction of lifting the substrate, when the substrate is placed in a manner offset from the predetermined position of the clamping surface, it is conceivable that the substrate will be fixed in a state of being lifted by the mechanical clamps.

[0009] In other words, if it is the electrostatic chuck of Patent Document 1, when the substrate is placed at a position offset from the predetermined position on the clamping surface, it will be unable to reliably hold the substrate in the predetermined position.

[0010] The present invention aims to solve the above-mentioned problems by providing a substrate support device that can guide the substrate to a predetermined position and support the substrate in the predetermined position even when the substrate is placed at a position offset from a predetermined position.

[0011] [Methods used to solve problems]

[0012] The substrate support device of the present invention comprises: a support platform having a support surface for placing a circular substrate, and being rotatable in a manner that changes the orientation of the support surface, thereby changing from a placement posture for placing the substrate on the support surface to a processing posture for processing a predetermined surface of the substrate; and a plurality of supports, wherein when the support platform is in the processing posture, the substrate can be supported at a predetermined substrate support position on the support surface; each of the plurality of supports has at least one contact surface that can contact the side of the substrate to support the substrate; each of the plurality of supports rotates around a predetermined rotation axis and moves from an upper position where the contact surface is located above the support surface toward the support surface to reach the support position for supporting the substrate; during the movement of the plurality of supports from the upper position to the support position, at least one of the contact surfaces contacts the substrate placed at a position offset from the substrate support position on the support surface while guiding the substrate to the substrate support position.

[0013] According to this configuration, when the substrate is placed at a position offset from a predetermined substrate support position, during the movement of multiple supports from the upper position to the support position, at least one contact surface will contact the substrate while guiding the substrate to the predetermined substrate support position. That is, when the substrate is placed at a position offset from the predetermined substrate support position, at least one contact surface will move from the upper side of the substrate toward the substrate side while guiding the substrate to the predetermined substrate support position.

[0014] Therefore, in the substrate support device of the present invention, even if the substrate is placed at a position offset from the predetermined substrate support position, the substrate will not be lifted, and the substrate can be reliably guided to the substrate support position.

[0015] Furthermore, even when the support table is in a processing position, the substrate support device of the present invention will support the substrate in a predetermined substrate support position. That is, in a substrate processing apparatus using the substrate support device of the present invention, even when the substrate is placed at a position offset from the substrate support position, the support table can be positioned in a processing position after the multiple supports guide the substrate to the substrate support position and support it, thereby processing the substrate while it is supported in the predetermined substrate support position.

[0016] Alternatively, the substrate support device of the present invention may be configured such that the contact surfaces are arranged in such a way that the center of the substrate placed at the substrate support position is located within any triangular region formed by connecting the three points where each of the contact surfaces contacts the side surface.

[0017] Based on this configuration, regardless of which direction the substrate is offset from the predetermined substrate support position on the support surface, the substrate support device can guide the substrate to the substrate support position and support it there.

[0018] Alternatively, the substrate support device of the present invention may be configured such that at least one of the contact surfaces contacts the substrate in each of the four regions of the substrate divided by a first straight line and a second straight line, wherein the first straight line passes through the center of the substrate placed at the substrate support position and is parallel to the horizontal direction when the support is in the processing posture, and the second straight line passes through the center and is perpendicular to the first straight line.

[0019] Based on this configuration, regardless of which direction the substrate is offset from the predetermined substrate support position on the support surface, the substrate support device can guide the substrate to the substrate support position and support it there.

[0020] Alternatively, the substrate support device of the present invention may also be configured such that the substrate has a cut-out portion; and in at least one of the four regions, a plurality of the contact surfaces are in contact with the substrate.

[0021] Sometimes, the following situation occurs: the substrate support position changes, causing one contact surface in one of the four regions to be unable to contact the substrate due to the position of the cut-out portion of the substrate. In contrast, according to this configuration, the other contact portions in that region can contact the substrate S. Therefore, even when the substrate has a cut-out portion and the substrate support position changes, it is possible to guide and support the substrate placed at the substrate support position.

[0022] Alternatively, the substrate support device of the present invention may also be configured to include at least one limiting member, which is positioned above the surface to be processed when the substrate is in the substrate support position, so as to limit the movement of the substrate.

[0023] Alternatively, the substrate support device of the present invention may also be configured such that the limiting member and the plurality of supports are positioned above the surface to be processed simultaneously when they reach the support position, or are positioned above the surface to be processed after the plurality of supports reach the support position.

[0024] According to this configuration, the limiting member and multiple supports are positioned above the surface to be processed simultaneously upon reaching the support position, or positioned above the surface to be processed after the multiple supports have reached the support position. That is, the limiting member and the substrate are positioned above the surface to be processed simultaneously at a predetermined substrate support position via the support member, or positioned above the surface to be processed subsequently. Therefore, the limiting member does not need to be configured considering the substrate being positioned offset from a predetermined substrate support position, thus reducing the area covering the top of the substrate. Accordingly, when performing, for example, ion beam irradiation of the substrate, the area on the surface to be processed of the substrate that is not processed due to the limiting member blocking the ion beam can be reduced.

[0025] Alternatively, the substrate support device of the present invention may also be configured such that, with the limiting member positioned above the surface to be processed, the limiting member is in contact with the surface to be processed.

[0026] Alternatively, the substrate support device of the present invention may also be configured such that, when the limiting member is in the limiting position, the limiting member separates from the surface being processed.

[0027] Alternatively, the substrate support device of the present invention may also be configured such that at least one of the limiting members and at least one supporting member are integrated, and the rotation axis is used as the center for rotation.

[0028] Alternatively, the substrate support device of the present invention may also be configured such that the support platform is configured as an electrostatic clamp for electrostatically adsorbing the substrate onto the support surface.

[0029] [Invention Benefits]

[0030] As explained above, the substrate support device according to the present invention can guide the substrate to the substrate support position and support it at the substrate support position even when the substrate is placed at a position offset from the predetermined substrate support position. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of a substrate support device and a substrate processing device according to an embodiment of the present invention.

[0032] Figure 2 A schematic side view of a substrate support device showing the state in which the support body is in the upper position as in the same embodiment.

[0033] Figure 3 A schematic side view of a substrate support device to show the state of the support body in the support position in the same embodiment.

[0034] Figure 4A front view of the substrate support device showing the state in which the support body is in the upper position as in the same embodiment.

[0035] Figure 5 A front view of a substrate support device showing the state of the support body in the support position as in the same embodiment.

[0036] Figure 6 This is a perspective view of the support body in the same embodiment.

[0037] Figure 7 A top view of the substrate support device to show the state of a change in the predetermined substrate support position in the same embodiment.

[0038] Figure 8 A schematic side view showing the substrate support device of the first variation of the same embodiment.

[0039] Figure 9 A top view showing the substrate support device of the second variation of the same embodiment.

[0040] Figure 10 A top view showing the substrate support device of the third variation of the same embodiment.

[0041] Explanation of reference numerals in the attached figures

[0042] 1. Substrate support device

[0043] 10 Support Platforms

[0044] 10a Support Surface

[0045] 10b electrode

[0046] 11 Support

[0047] 11A First Support

[0048] 11B Second Support

[0049] 12, 12a to 12h Supporting components

[0050] 13, 13a to 13j Restriction members

[0051] 14. Base

[0052] 14a First base

[0053] 14b Second base

[0054] Contact surfaces 15, 15a to 15h

[0055] 16-axis components

[0056] 16a First shaft component

[0057] 16b Second shaft component

[0058] 100 Substrate Processing Apparatus

[0059] 101 Ion Source

[0060] 102 Mass Analysis Magnets

[0061] Processing Room 103

[0062] A. Support platform rotation axis

[0063] B, B3, B4 Rotation Axis

[0064] B1 First Rotation Axis

[0065] B2 Second Rotation Axis

[0066] IB ion beam

[0067] L1 First Straight Line

[0068] L2 Second Straight Line

[0069] O Center

[0070] P1 Loading posture

[0071] P2 Handling Posture

[0072] Q. Substrate support position

[0073] R1 (above position)

[0074] R2 support position

[0075] S substrate

[0076] Sa is the surface being processed

[0077] Sb resection

[0078] Sc side

[0079] Sd back

[0080] T-shaped triangle. Detailed Implementation

[0081] The substrate support device 1 and the substrate processing apparatus 100 using the substrate support device 1 in the first embodiment of the present invention will be described. Furthermore, Figures 1 to 10 Made for the purpose of understanding the present invention, the shapes, length ratios, and scaling ratios of the constituent elements in the various figures may not be consistent.

[0082] Figure 1This is a schematic diagram of a substrate support device 1 and a substrate processing apparatus 100 having the substrate support device 1 according to an embodiment of the present invention.

[0083] like Figure 1 As shown, the substrate processing apparatus 100 in this embodiment is an ion beam irradiation apparatus that irradiates a circular substrate S with an ion beam IB. Furthermore, the substrate S in this embodiment is a wafer, having a processed surface Sa that is irradiated by the ion beam IB.

[0084] The ion beam irradiation apparatus shown in this embodiment is an example of a substrate processing apparatus 100 using a substrate support device 1, but the substrate processing apparatus 100 is not limited to an ion beam irradiation apparatus. That is, the substrate support device 1 is not limited to use in an ion beam irradiation apparatus.

[0085] Furthermore, the wafer shown in this embodiment is an example of a substrate S, but the substrate S is not limited to a wafer. That is, the substrate processing apparatus 100 can be any apparatus if it is used to perform a predetermined processing on the surface Sa of the substrate S. In addition, the substrate S can be any article as long as the surface Sa to be processed can be subjected to the predetermined processing.

[0086] The substrate processing apparatus 100 includes an ion source 101 that generates plasma from a raw material gas, and a mass analysis magnet 102 that performs mass separation on the ion beam IB drawn from the ion source 101. Additionally, the substrate processing apparatus 100 includes a processing chamber 103 for irradiating the substrate S with the ion beam IB. The ion beam IB, after passing through the mass analysis magnet 102, is introduced into the processing chamber 103. A substrate support device 1 for supporting the substrate S is disposed in the processing chamber 103.

[0087] The X, Y, and Z axes shown in each figure are orthogonal to each other, and the Y axis shown in each figure is parallel to the height direction of the substrate support device 1. In addition, the Z axis shown in each figure is parallel to the travel direction of the ion beam IB in the processing chamber 103. While supported by the substrate support device 1, the substrate S is repeatedly transported back and forth along the X axis in the processing chamber 103 in a manner that cuts across the ion beam IB.

[0088] The substrate support device 1 includes a support platform 10, which has a circular support surface 10a for placing the substrate S. The support platform 10 is configured to support the substrate S. Figure 1 The predetermined support platform rotates within a predetermined range, with the predetermined axis A as the center.

[0089] The support stage 10 rotates around its rotation axis A in such a way that the orientation of the support surface 10a changes, thereby changing from the posture in which the substrate S can be placed on the support surface 10a (i.e., the placement posture P1) to the posture in which a predetermined process can be performed on the surface Sa to be processed (i.e., the processing posture P2). Furthermore, in this embodiment, the predetermined process that can be performed on the surface Sa to be processed is ion beam irradiation, such as ion implantation.

[0090] The substrate S has a roughly circular surface Sa that is being processed, and it has a cut-off portion Sb, which makes the surface Sa's shape resemble a portion of a circle after it has been removed. In this embodiment, the cut-off portion Sb is an oriental flat, but it is not limited to this shape. The cut-off portion Sb can also be, for example, a notch.

[0091] The substrate S can be a plate with a roughly circular shape for the surface Sa to be processed, and the overall roughly circular shape can be formed. The surface Sa to be processed can also be a shape in which a portion of the circle has been cut off, as in this embodiment, or it can be a shape in which the substrate S is bent in the thickness direction.

[0092] Figure 1 In the diagram, indicated by dashed lines: after changing from the placement posture P1 to the processing posture P2, the support stage 10, while supporting the substrate S, moves parallel to the X-axis and transversely cuts the ion beam IB. Furthermore, in... Figure 1 In the diagram, the solid line represents the support platform 10, which is located at the position where the substrate S can be placed on the support platform 10. The action of changing the orientation of the surface Sa to be processed by changing the support platform 10 from the placement posture P1 to the processing posture P2 can be performed at the position where the substrate S is placed on the support platform 10.

[0093] The substrate support device 1 includes a plurality of support bodies 11, which can support the substrate S at a predetermined substrate support position Q on the support surface 10a when the support table 10 is in the processing posture P2. Although the number of support bodies 11 is not limited to a specific number, the substrate support device 1 of this embodiment includes two support bodies 11.

[0094] When performing a predetermined process on the substrate S, that is, when the substrate support device 1 is located at... Figure 1 When the position is indicated by the dashed line, the support stage 10 is set to the processing posture P2, with the processed surface Sa of the substrate S facing the ion beam IB. Even in this state, the substrate S is supported at the substrate support position Q by the two supports 11.

[0095] That is, during the ion beam IB irradiation of the treated surface Sa, the substrate S is always supported at the substrate support position Q by the two supports 11. Furthermore, the relative position of the substrate support position Q with respect to the support surface 10a is... Figure 1 In the diagram, the substrate support position Q in this embodiment is indicated by a dashed line. Hereinafter, one of the two supports 11 provided in the substrate support device 1 will be referred to as the first support 11A, and the other as the second support 11B.

[0096] Figure 2 This is a schematic side view of the substrate support device 1 showing the state in which the support 11 is located at the upper position R1 described later in this embodiment. Additionally, Figure 4 A schematic side view of the substrate support device 1 showing the state of each support 11 in the support position R2 described later in this embodiment.

[0097] like Figure 2 and Figure 3 As shown, each support body 11 is fixed to the support platform 10 on the outside of the support surface 10a in a manner that allows it to rotate within a predetermined range with the rotation axis B described later as the center. In this embodiment, the first support body 11A and the second support body 11B are arranged opposite each other on the outside of the support surface 10a with respect to each other across the support surface 10a.

[0098] Each support 11 has a shaft member 16, which is disposed inside each support 11 and can transmit the driving force generated by a motor (not shown). Figure 2 and Figure 3 In the middle, the shaft component 16 is represented by a dashed line.

[0099] Each support 11 is configured such that, by transmitting the driving force of a motor (not shown) to the shaft member 16, it can perform a rotational movement centered on the rotational axis B defined by the shaft member 16 within a predetermined range. Furthermore, in Figure 1 In the diagram, the rotation axis B is represented by a single chain line. Furthermore, each shaft member 16 is arranged parallel to the support surface 10a. That is, the rotation axis B defined by each shaft member 16 is parallel to the support surface 10a.

[0100] In the following, the rotation axis B of the first support 11A will be referred to as the first rotation axis B1, and the rotation axis B of the second support 11B will be referred to as the second rotation axis B2. Alternatively, the shaft member 16 provided by the first support 11A will be referred to as the first shaft member 16a, and the shaft member 16 provided by the second support 11B will be referred to as the second shaft member 16b.

[0101] Each support 11 rotates around the rotation axis B as the center, and from Figure 2 The upper position R1 shown is moved to Figure 3 The support position R2 is shown. Each shaft member 16 (that is, the first shaft member 16a and the second shaft member 16b) is positioned radially outward of the substrate S, which is positioned at the substrate support position Q. Therefore, each support 11 rotates within a predetermined range with the rotation axis B as the center, and moves from the upper position R1 to the support position R2, wherein the rotation axis B is located radially outward of the substrate S, which is positioned at the substrate support position Q.

[0102] Although each support 11 in this embodiment is configured to rotate around the rotation axis B from the upper position R1, the position at which each support 11 begins to rotate around the rotation axis B is not limited to the upper position R1. It is acceptable as long as each support 11 is configured to reach the support position R2 via the upper position R1.

[0103] Each support body 11 has multiple support members 12, which support the substrate S at a predetermined substrate support position Q when each support body 11 is in the support position R2. In addition, each support body 11 has multiple limiting members 13, which are positioned above the processed surface Sa in the thickness direction of the substrate S when each support body 11 is in the support position R2 and the substrate S is in the substrate support position Q, thereby limiting the movement of the substrate S.

[0104] The support 11 in this embodiment has four supporting members 12 and four limiting members 13, however, in Figure 2 and Figure 3 The diagram schematically shows one of the support members 12 and one of the restraining members 13. Furthermore, the number of support members 12 and restraining members 13 in each support 11 is not limited to a specific number. The number of restraining members 13 and the positions for arranging the restraining members 13 can be changed according to the envisioned movement of the substrate S, as long as the substrate support device 1 has at least one restraining member 13.

[0105] Each support 11 has a base 14 that connects multiple support members 12 and multiple restraining members 13. In this embodiment, in each support 11, four support members 12, four restraining members 13, and base 14 are integrally formed. Hereinafter, the base 14 of the first support 11A will be referred to as the first base 14a, and the base 14 of the second support 11B will be referred to as the second base 14b. Furthermore, each support 11 may, for example, be configured such that each support member 12, each restraining member 13, and the base 14 are formed individually and then assembled.

[0106] In this embodiment, the support members 12 are each formed in a columnar shape and have a height dimension larger than the thickness dimension of the substrate S. Furthermore, each support member 12 has a contact surface 15, which, when the support body 11 is in the support position R2, can contact the side surface Sc of the substrate S positioned at the substrate support position Q to support the substrate S. Moreover, considering that each support body 11 has four support members 12, it can be seen that each support body 11 has four contact surfaces 15.

[0107] The substrate S, which is moved into the processing chamber 103, is placed on the support surface 10a by a robot (not shown). However, sometimes it is placed at a position offset from the predetermined substrate support position Q. Figure 2 The image shows the state in which the substrate S is placed at a position offset from the substrate support position Q, indicated by the dashed line. Furthermore, in... Figure 2 The substrate support position Q, indicated by the dashed line, is slightly separated from the support surface 10a. However, this is to avoid overlapping with the solid line indicating the substrate S. In fact, the substrate S located at the substrate support position Q is located on the support surface 10a.

[0108] Even when the substrate S is placed at a position offset from the substrate support position Q, the substrate support device 1 will move at least one contact surface 15 while contacting the periphery of the side surface Sc or back surface Sd of the substrate S, thereby guiding the substrate S to the predetermined substrate support position Q.

[0109] The limiting member 13 restricts the movement of the substrate S, which is positioned at the substrate support position Q. For example... Figure 3 As shown, in this embodiment, each limiting member 13 is configured to contact the surface Sa of the substrate S being processed when the support 11 is located at the support position R2 and positioned above the surface Sa being processed. Furthermore, in this embodiment, each limiting member 13 only contacts the surface Sa being processed; it is not intended to apply a pushing force that pushes the substrate S toward the support surface 10a. Alternatively, the substrate support device 1 may be configured such that at least one limiting member 13 applies this pushing force to the substrate S.

[0110] like Figure 2 As shown, when each support 11 is in the upper position R1, each contact surface 15 is located above the support surface 10a. Furthermore, the state where the contact surface 15 is located above the support surface 10a refers to the state where the area of ​​the contact surface 15 that contacts the substrate S as the support 11 moves from the upper position R1 to the support position R2 is located above the support surface 10a. That is, when the support 11 is in the upper position R1, it is not necessary for all areas of the contact surface 15 to be located above the support surface 10a.

[0111] The two supports 11 rotate around a predetermined axis B, and move from an upper position R1 (where each contact surface 15 is above the support surface 10a) toward the support surface 10a to a supporting position R2 on the substrate S. Along with the movement of each support 11, each support member 12 moves from above the substrate S on the support surface 10a toward the substrate S.

[0112] During the movement of the two supports 11 from the upper position R1 to the support position R2, at least one contact surface 15 will contact the substrate S placed at a position offset from the predetermined substrate support position Q on the support surface 10a while guiding the substrate S to the substrate support position Q.

[0113] Assuming that when the support member 12 moves from the underside of the substrate S placed on the support surface 10a toward the substrate S side, it is conceivable that when the substrate S is placed at a position offset from the substrate support position Q, the substrate S will be lifted by at least one contact surface 15. In this case, it is conceivable that the substrate S will eventually be lifted by at least one contact surface 15, and a portion of the substrate S will be supported by the support body 11 in a state separated from the support surface 10a. That is, when the support body 11 is configured such that the contact surface 15 moves from the underside of the support surface 10a toward the upper side, a situation arises where the substrate S cannot be supported at the predetermined substrate support position Q.

[0114] In contrast, in this embodiment, as the two supports 11 move from the upper position R1 to the support position R2, each contact surface 15 moves from the upper side of the substrate S placed on the support surface 10a toward the substrate S side. Therefore, even when the substrate S is placed at a position offset from the substrate support position Q, the substrate support device 1 will not lift the substrate S, and can reliably guide the substrate S to the substrate support position Q.

[0115] Furthermore, even when the support table 10 is in the processing posture P2, the substrate processing apparatus 100 using the substrate support device 1 will support the substrate S at a predetermined substrate support position Q. That is, even if the substrate S is placed at a position offset from the substrate support position Q, the substrate processing apparatus 100 can guide the substrate S to the substrate support position Q and support it with the multiple supports 11, and then enter the processing posture P2, thereby processing the substrate S while it is supported at the substrate support position Q.

[0116] like Figure 2 and Figure 3As shown, the substrate support device 1 includes an electrode 10b, which is disposed inside the support platform 10 and is used to electrostatically adsorb the substrate S onto the support surface 10a. That is, the support platform 10 in this embodiment is configured as an electrostatic clamp for electrostatically adsorbing the substrate S onto the support surface 10a.

[0117] like Figure 1 As shown, in the substrate processing apparatus 100 of this embodiment, the substrate S is first moved from the outside into the processing chamber 103, and then placed by a robot (not shown) on the support surface 10a of the support table 10 in the placement posture P1. At this time, each support 11 is located... Figure 2 At the upper position R1 shown, the substrate S is placed on the support surface 10a without contacting each support body 11.

[0118] Subsequently, each support 11 rotates around a predetermined axis of rotation B as its center, and moves accordingly to... Figure 3 The support position R2 is shown, and the substrate S is supported at the substrate support position Q by the support body 11.

[0119] When the substrate S is placed on the support surface 10a by a robot (not shown), sometimes the substrate S is placed at a position offset from the predetermined substrate support position Q. Even in such cases, as each support 11 moves from the upper position R1 to the support position R2, at least one contact surface 15 moves while in contact with the substrate S to guide the substrate S to the predetermined substrate support position Q.

[0120] In other words, the substrate S, placed at a position offset from the predetermined substrate support position Q, is guided to the substrate support position Q by moving on the support surface 10a while being pressed by at least one contact surface 15. More specifically, the contact surface 15 of at least one support member 12 moves by pressing the substrate S while contacting the periphery of the side surface Sc or back surface Sd of the substrate S, thereby guiding the substrate S to the predetermined substrate support position Q.

[0121] Furthermore, since each limiting member 13 in this embodiment is integrated with the support body 11, each limiting member 13 will also rotate around the rotation axis B as the center when the support body 11 rotates around the rotation axis B. Therefore, each limiting member 13 and each support body 11 are simultaneously positioned above the surface Sa to be processed when they reach the support position R2.

[0122] Furthermore, the limiting member 13 need not be integral with the support 11. The limiting member 13 only needs to be configured to operate independently of the support 11, and to operate in the following manner: positioned above the surface Sa to be processed at the same time as each support 11 reaches the support position R2, or positioned above the surface Sa to be processed after each support 11 reaches the support position R2.

[0123] That is, each limiting member 13 can be configured such that it is positioned above the surface to be processed Sa simultaneously with the two supports 11 reaching the support position R2, or positioned above the surface to be processed Sa after the two supports 11 reach the support position R2. In other words, each limiting member 13 can be positioned above the surface to be processed Sa simultaneously with the substrate S being positioned at the predetermined substrate support position Q, or positioned above the surface to be processed Sa afterward.

[0124] Assuming that the substrate S is supported in a position offset from the substrate support position Q, the limiting member 13 must be configured to be relatively large so that it can limit the movement of the substrate S regardless of where the substrate S is placed.

[0125] In contrast, the limiting member 13 of this embodiment does not need to be configured considering the case where the substrate S is positioned offset from the predetermined substrate support position Q. Therefore, the area covered by the limiting member 13 above the substrate S can be reduced. Accordingly, for example, during the substrate processing apparatus 100's processing of the substrate S by irradiating it with the ion beam IB, the area of ​​the processed surface Sa that is not processed because the limiting member 13 blocks the ion beam IB can be reduced.

[0126] After the substrate S is supported at the substrate support position Q by the support body 11, a voltage is applied to the electrode, causing the substrate S to be electrostatically attracted by the support surface 10a. That is, the substrate S is supported at the substrate support position Q not only by the two supports 11, but also by the electrical force generated by applying a voltage to the electrode 10b.

[0127] When the substrate S is supported at the substrate support position Q, i.e. Figure 1 As shown, the support stage 10 rotates around the support stage rotation axis A to assume the processing posture P2, so that the surface to be processed Sa faces the ion beam IB. Subsequently, the substrate support device 1, which supports the substrate S in the processing chamber 103, moves back and forth in a manner that cuts across the ion beam IB, so that the ion beam IB irradiates the surface to be processed Sa.

[0128] When the ion beam IB irradiates approximately the entire area of ​​the surface Sa to complete the ion beam irradiation treatment of the substrate S, the support stage 10 rotates around its rotation axis A and returns to the mounting position P1. Then, after the electrostatic adsorption on the substrate S is released by applying a release voltage to the electrode 10b, the pair of supports 11 move back to the upper position R1 to release the support of the substrate S. Subsequently, the substrate S is lifted by a robot (not shown) and thus separated from the support surface 10a and moved outside the processing chamber 103.

[0129] Sometimes, the following situation may occur: simultaneously with the application of a release voltage to electrode 10b to release the electrostatic adsorption of the substrate S, the substrate S may move in a manner that causes it to bounce off the support surface 10a. In this case, it is conceivable that the substrate S may detach from the support surface 10a, or that the substrate S may move to a position that is significantly offset from the substrate support position Q. When these situations occur, the robot (not shown) will be unable to lift and transport the processed substrate S, causing the operation of the substrate processing apparatus 100 to stop.

[0130] In contrast, since the substrate support device 1 has a limiting member 13 for limiting the movement of the substrate S, even if the substrate S is to move in a way that bounces off the support surface 10a as described above, the movement of the substrate S can be limited by the limiting member 13. Accordingly, when the voltage applied to the electrode 10b is released, the situation where the substrate S falls off the support surface 10a or shifts significantly from the substrate support position Q can be suppressed.

[0131] In this embodiment, each limiting member 13 can be any member, as long as it can suppress the substrate S from shifting significantly from the predetermined substrate support position Q due to the substrate S moving in a way that bounces off the support surface 10a. When the support body 11 is in the support position R2, the limiting member 13 can also be not in contact with the surface Sa to be processed of the substrate S, as long as it is positioned above the surface Sa to be processed in the thickness direction of the substrate S.

[0132] Even when the support table 10 is in the processing posture P2 (that is, when the processed surface Sa of the substrate S faces the ion beam IB), the substrate support device 1 of this embodiment can support the substrate S in the substrate support position Q using only two support bodies 11. More specifically, even when the processed surface Sa of the substrate S faces the ion beam IB, the substrate S can be supported in the substrate support position Q using only the multiple support members 12 of the two support bodies 11.

[0133] That is, even without applying voltage to electrode 10b, the substrate can be supported in substrate support position Q using only the two supports 11. In other words, in substrate support device 1, it is not necessary to configure the support platform 10 as an electrostatic clamp. By configuring the support platform 10 as an electrostatic clamp, the substrate S is held more securely in substrate support position Q.

[0134] When the substrate support device 1 does not have the electrode 10b, that is, when the support platform 10 is not configured as an electrostatic chuck, the aforementioned bounce of the substrate S will not occur. Therefore, in this case, the substrate support device 1 may not have the restraining member 13. Furthermore, even if the support platform 10 is configured as an electrostatic chuck, if the aforementioned bounce of the substrate S is not anticipated, the substrate support device 1 may not have the restraining member 13.

[0135] Furthermore, even if the substrate support device 1 does not have the electrode 10b, the limiting member 13 can still be provided to securely hold the substrate S at the substrate support position Q. In this case, it is sufficient that the limiting member 13 is configured to contact the processed surface Sa of the substrate S located at the substrate support position Q.

[0136] Figure 4 A top view of the substrate support device 1 showing the state of the two supports 11 in the upper position R1. Figure 5 A top view of the substrate support device 1 showing the state of the two supports 11 in the support position R2. Figure 4 and Figure 5 The support platforms 10 shown are all in the loading posture P1.

[0137] Figure 6 This is a perspective view of the first support 11A in this embodiment. Since the second support 11B in this embodiment is linearly symmetrical to the first support 11A, a perspective view of the second support 11B is omitted.

[0138] like Figure 4 and Figure 5 As shown, the first support 11A and the second support 11B each have four support members 12, four limiting members 13, and a base 14 that connects the support members 12 and the limiting members 13.

[0139] In the following, the four support members 12 of the first support body 11A will be referred to as support members 12a to 12d, and the four support members 12 of the second support body 11B will be referred to as support members 12e to 12h. Additionally, the four limiting members 13 of the first support body 11A will be referred to as limiting members 13a to 13d, and the four limiting members 13 of the second support body 11B will be referred to as limiting members 13e to 13h.

[0140] Figure 5 The first straight line L1, represented by the dashed line, is a straight line passing through the center O of the substrate S placed at the substrate support position Q and parallel to the horizontal direction when the support table 10 is in the processing posture P2. That is, the first straight line L1 is a straight line parallel to the rotation axis A and the X-axis of the support table. Furthermore, Figure 5 The second straight line L2, represented by the dashed line, is a straight line that passes through the center O of the substrate S placed at the substrate support position Q and is perpendicular to the first straight line L1.

[0141] The substrate S is divided into four regions by the first straight line L1 and the second straight line L2. In this embodiment, when the support stage 10 moves to the processing posture P2, the cut-off portion Sb of the substrate S is positioned downwards. Therefore, within the regions divided by the first straight line L1, the support stage 10 is positioned on the upper side of the substrate S when in the processing posture P2 (i.e., Figure 5 The upper side of the paper surface in the diagram is defined as the upper side of the substrate S. Furthermore, for convenience, within the area divided by the first straight line L1, the lower side of the substrate S when the support platform 10 is in the processing posture P2 (i.e., the lower side of the substrate S) is defined as the area defined by the first straight line L1. Figure 5 The lower side of the paper surface in the diagram is defined as the lower side of the substrate S. Additionally, for convenience, when passing through... Figure 5 Within the region divided by the second straight line L2, the right side of the paper is referred to as the right side of the substrate S, and the left side of the paper is referred to as the left side of the substrate S.

[0142] like Figure 5 As shown, the first support body 11A has support members 12a and 12b that support the side surface Sc of the substrate S in the upper and right-side region of the substrate S. Additionally, the first support body 11A has support members 12c and 12d that support the side surface Sc of the substrate S in the lower and right-side region of the substrate S.

[0143] The second support 11B has support members 12e and 12f that support the side surface Sc of the substrate S in the upper and left regions of the substrate S. Additionally, the second support 11B has support members 12g and 12h that support the side surface Sc of the substrate S in the lower and left regions of the substrate S.

[0144] The first support 11A has limiting members 13a and 13b positioned on the upper side and right side of the substrate S above the processed surface Sa. Additionally, the first support 11A has limiting members 13c and 13d positioned on the lower side and right side of the substrate S above the processed surface Sa.

[0145] The second support 11B has limiting members 13a and 13b positioned on the upper side and left side of the substrate S above the processed surface Sa. Additionally, the second support 11B has limiting members 13g and 13h positioned on the lower side and left side of the substrate S above the processed surface Sa.

[0146] That is, in this embodiment, the two support members 12 and the two limiting members 13 are respectively positioned in four regions of the substrate S divided by the first straight line L1 and the second straight line L2.

[0147] like Figure 6 As shown, the support members 12a to 12h each have contact surfaces 15a to 15h that can contact the side surface Sc of the substrate S and support the substrate S. Figure 5 In the state of the support substrate S shown, the contact surfaces 15a to 15h are curved surfaces that protrude toward the center O of the substrate S. Furthermore, the case where the contact surfaces 15a to 15h are curved surfaces includes the case where the contact surfaces 15a to 15h are spherical surfaces.

[0148] The substrate support device 1 forms the contact surfaces 15a to 15h as curved surfaces, so that regardless of how the substrate S is placed at a position offset from the predetermined substrate support position Q of the processed surface Sa, the substrate S can be smoothly guided to the predetermined substrate support position Q.

[0149] Figure 4 The image shows the state in which the substrate S is positioned offset to the right and upward from a predetermined substrate support position Q on the paper. When from... Figure 4 When the first support 11A and the second support 11B rotate from the upper position R1 toward the support position R2, the contact surface 15a of the support member 12a closest to the substrate S will first come into contact with the periphery or side surface Sc of the back surface Sd of the substrate S. As a result, the first support 11A rotates around the first rotation axis B1, causing the substrate S to be pushed by the contact surface 15a and move towards the lower left of the paper surface on the support surface 10a.

[0150] Subsequently, as the first support 11A and the second support 11B rotate and move, the substrate S comes into contact with the contact surface 15e. It is then pressed by the contact surfaces 15a and 15e and moves downwards from the paper surface. Next, the substrate S is guided by contacting any of the other contact surfaces 15b to 15d and contact surfaces 15f to 15h, and is finally positioned at the predetermined substrate support position Q.

[0151] As described above, the substrate support device 1 of this embodiment rotates along with the first support body 11A and the second support body 11B, causing the contact surfaces 15a to 15h of the support members 12a to 12h to press against the periphery of the side surface Sc or the back surface Sd of the substrate S, thereby guiding the substrate S to a predetermined substrate support position Q.

[0152] In this embodiment, the first support 11A and the second support 11B each have four support members 12a to 12d and four support members 12e to 12h, but the number of support members 12 in the first support 11A and the second support 11B is not limited thereto. Furthermore, the first support 11A and the second support 11B each have four limiting members 13a to 13d and four limiting members 13e to 13h, but the number of limiting members 13 in the first support 11A and the second support 11B is not limited thereto.

[0153] In this embodiment, the substrate support device 1 supports the substrate S by having two contact surfaces 15 in contact with the substrate S in each of the four regions of the substrate S divided by the first straight line L1 and the second straight line L2. The first straight line L1 passes through the center O of the substrate S placed at the substrate support position Q and is parallel to the horizontal direction when the support table 10 is in the processing posture P2. The second straight line L2 passes through the center O of the substrate S and is perpendicular to the first straight line L1.

[0154] With the above configuration, regardless of which direction the substrate S is offset from the predetermined substrate support position Q on the support surface 10a, the substrate support device 1 can guide the substrate S to the substrate support position Q and support it at the substrate support position Q.

[0155] Here, in order to guide and support the substrate S to the substrate support position Q, the substrate support device 1 only needs to be configured such that at least one contact surface 15 in each of the four regions contacts the substrate S to support the substrate S. That is, it is sufficient to position at least one support member 12 in each of the four regions.

[0156] In contrast, the substrate support device 1 of this embodiment anticipates the scenario where the predetermined substrate support position Q changes, and is configured such that two contact surfaces 15 are in contact with the substrate S in each of the four regions of the substrate S. That is, the substrate support device 1 of this embodiment is configured such that each pair of support members 12 is positioned in each of the four regions.

[0157] Figure 7 A top view of a substrate support device 1 showing an example of a change in the predetermined substrate support position Q. Figure 7 The image shows a state in which the cut-out portion Sb of the substrate S is positioned opposite the support member 12d due to a change in the substrate support position Q.

[0158] In this situation, since the contact surface 15d of the support member 12d cannot contact the substrate S, assuming that the first support 11A does not have the support member 12c, the substrate S will not be guided or supported in the area to the right and underside of the substrate S. Furthermore, when the support platform 10 is rotated to the processing posture P2 in this state, there is a risk that the substrate S will fall off the support platform 10.

[0159] In contrast, in this embodiment, not only is the support member 12d positioned, but the support member 12c is also positioned in the region to the right and underside of the substrate S. Therefore, even if the substrate support position Q is changed as described above, the substrate S can be reliably guided to the substrate support position Q. Moreover, even when the support platform 10 is in the processing posture P2, the substrate S can be reliably supported.

[0160] That is, the number and arrangement of the support members 12 of the support body 11 can be appropriately set according to the position of the cut-out portion Sb of the substrate S in the substrate support position Q. The substrate support device 1 can be configured in such a way that, in the case of a change in the substrate support position Q, considering the changed cut-out portion Sb, a plurality of contact surfaces 15 are made to contact the substrate S in at least one of the four regions.

[0161] If the position of the substrate support position Q remains unchanged, when the support body 11 is in the support position R2, the substrate support device 1 only needs to make one contact surface 15 contact the substrate S in each of the four regions of the substrate S divided by the first straight line L1 and the second straight line L2 to support the substrate S. That is, the substrate support device 1 only needs to be configured in the following way: in each of the four regions, at least one support member 12 supports the substrate S.

[0162] In contrast, the substrate support device 1, as shown in this embodiment, is configured such that multiple contact surfaces 15 contact the substrate S in each of the four regions. Therefore, even if the position of the substrate support position Q changes, the substrate S can be guided to and supported at the predetermined substrate support position Q. The substrate support device 1 can be configured such that, depending on the position of the cut portion Sb of the substrate S located at the changed substrate support position Q, multiple contact surfaces 15 contact the substrate S in at least one of the four regions.

[0163] Figure 8 This is a schematic side view of a substrate support device 1 showing a first modified example of the substrate support device 1. In this modified example, with each support body 11 in the support position R2 and each limiting member 13 positioned above the surface to be processed Sa, each limiting member 13 separates from the surface to be processed Sa of the substrate S.

[0164] Sometimes, the following situation may occur: the substrate S bounces up simultaneously with the application of the release voltage to the electrode 10b. Even in this case, the movement of the substrate S is restricted because the limiting members 13a to 13h are located above the substrate S, preventing, for example, the substrate S from detaching from the support surface 10a.

[0165] Figure 9 A top view of a second modified example of a substrate support device 1.

[0166] like Figure 9 As shown, the substrate support device 1 of the second modification has four supports 11. In addition, each support 11 has a support member 12 having a contact surface 15 and a restraining member 13 integrally formed.

[0167] Furthermore, the substrate support device 1 in the second modification has two limiting members 13i and 13j that operate independently of each support 11. Both limiting members 13i and 13j are fixed to the support platform 10. In addition, the two limiting members 13i and 13j rotate around rotation axes B3 and B4, which are parallel to the support surface 10a, respectively.

[0168] Both limiting members 13i and 13j are configured to operate in the following manner: they are positioned above the surface Sa being processed simultaneously with each support 11 reaching the support position R2, or they are positioned above the surface Sa being processed immediately after each support 11 reaches the support position R2.

[0169] The number of the plurality of supports 11 provided in the substrate support device 1 is not limited to a specific number. In addition, the number of support members 12 (that is, the number of contact surfaces 15) provided in each support 11 is not limited to a specific number. Furthermore, the limiting member 13 does not need to be integrally formed with the support 11, and can also operate independently of the support 11.

[0170] Furthermore, the substrate support device 1 is not limited to the following configuration: when the support body 11 is in the support position R2, at least one support member 12 is positioned in each of the four regions of the substrate S divided by the first straight line L1 and the second straight line L2.

[0171] In order to guide and support the substrate S to the designated substrate support position Q, the plurality of contact surfaces 15 may be arranged in such a way that the center of the substrate S placed at the substrate support position Q is included in the triangular area formed by selecting three points from the plurality of points that contact the side surface Sc of the substrate S.

[0172] In other words, as long as the three support members 12, each having a contact surface 15, are configured in the following manner, the substrate S can be guided to and supported at a predetermined substrate support position Q, which includes the center of the substrate S within the triangular area formed by connecting the three points where each support member 12 contacts the side surface Sc of the substrate S.

[0173] Therefore, when the position of the cut-out portion Sb is fixed in the state where the substrate S is placed at a predetermined substrate support position Q (that is, when the position of the cut-out portion Sb is not changed), it is sufficient to have at least three support members 12.

[0174] Figure 10 This is a top view of a third modified example of the substrate support device 1. The third modified example of the substrate support device 1 is a modification in which the number and position of the support members 12 and the limiting members 13 of the first support body 11A and the second support body 11B are changed respectively.

[0175] As described above, when the position of the cut-off portion Sb of the substrate S remains unchanged while it is positioned at the predetermined substrate support position Q, at least three support members 12 are sufficient. Therefore, in the third variation, the substrate support device 1 is configured such that the first support body 11A has one support member 12 and the second support body 11B has two support members 12.

[0176] like Figure 10As shown, the support member 12 of the first support body 11A contacts the side surface Sc of the substrate S along the first straight line L1. Furthermore, the two support members 12 of the second support body 11B contact the side surface Sc of the substrate S at positions symmetrical with respect to the first straight line L1. For example, with the above configuration, the center O of the substrate S is located within the region of the triangle T formed by connecting the points where the three support members 12 of the first support body 11A and the second support body 11B contact the side surface Sc of the substrate S, and the substrate S can be guided to a predetermined substrate support position Q and supported by the support members 12.

[0177] That is, the substrate support device 1 only needs to have three or more contact surfaces 15, and the multiple contact surfaces 15 can be arranged in the following way: within any triangular area formed by connecting the three points where each contact surface 15 contacts the side surface Sc of the substrate S, there is a center O of the substrate S.

[0178] The number and arrangement of the contact surfaces 15 that support the substrate S in the substrate support device 1, as well as the number and arrangement of the limiting members 13, can be appropriately changed according to the set substrate support position Q, the shape or material of the substrate S, etc.

[0179] Furthermore, the present invention is not limited to the described embodiments and variations, and various modifications can be made without departing from its spirit.

Claims

1. A substrate support apparatus comprising: a support table having a support surface on which a circular plate-shaped substrate is placeable, and rotating in a manner that changes an orientation of the support surface, whereby a placement attitude in which the substrate is placeable on the support surface changes into a processing attitude in which a predetermined processing is possible on a processed surface of the substrate; and a plurality of support bodies that are capable of supporting the substrate at a predetermined substrate support position on the support surface in a state where the support table is in the processing attitude, wherein the plurality of support bodies each have at least one contact surface that is capable of contacting a side surface of the substrate to support the substrate, wherein the plurality of support bodies each rotate around a predetermined rotation axis and move from an upper position where the contact surface is located above the support surface toward the support surface to reach the substrate support position, wherein at least one of the contact surfaces contacts the substrate placed at a position deviated from the substrate support position on the support surface while guiding the substrate to the substrate support position during movement of the plurality of support bodies from the upper position to the substrate support position, wherein the contact surface is disposed in such a manner that a center of the substrate placed at the substrate support position is present within a region of any one of triangles formed by connecting three points where each of the contact surfaces contacts the side surface, wherein at least one of the contact surfaces contacts the substrate in each of four regions of the substrate divided by a first straight line passing through a center of the substrate placed at the substrate support position and parallel to a horizontal direction in a state where the support table is in the processing attitude and a second straight line passing through the center and perpendicular to the first straight line, wherein the substrate has a cutout portion, and wherein a plurality of the contact surfaces contact the substrate in at least one of the four regions.

5. The substrate support apparatus according to any one of claims 1 to 4, further comprising at least one restriction member positioned above the processed surface in a state where the substrate is at the substrate support position to restrict movement of the substrate. The restriction member is positioned above the processed surface simultaneously with the plurality of support bodies reaching the substrate support position, or is positioned above the processed surface after the plurality of support bodies reach the substrate support position. The restriction member contacts the processed surface in a state where the restriction member is positioned above the processed surface. The restriction member is separated from the processed surface in a state where the restriction member is positioned above the processed surface. The support table is configured as an electrostatic chuck that electrostatically attracts the substrate to the support surface.

2. The substrate support apparatus of claim 1, wherein, ​ 3. The substrate support apparatus of claim 1, wherein, ​ 4. The substrate support apparatus of claim 3, wherein, ​ ​ ​ 6. The substrate support apparatus of claim 5, wherein, ​ 7. The substrate support apparatus of claim 5, wherein, ​ 8. The substrate support apparatus of claim 5, wherein, ​ 9. The substrate support apparatus of claim 5, wherein, ​

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