A method for detecting gallium oxide-based epitaxial structures

Abstract

This invention discloses a method for detecting gallium oxide-based epitaxial structures, relating to the field of electrical engineering. The method includes steps S1: performing lattice temperature mismatch analysis on each electronic component under test to obtain lattice temperature mismatch data; Step S2: judging the anomaly of the epitaxial structure based on the lattice temperature mismatch data, and performing leakage current analysis on components that initially pass inspection to obtain leakage current detection data; Step S3: providing early warning for epitaxial structure detection based on the leakage current detection data. This application can ensure the integrity and accuracy of gallium oxide-based epitaxial structure detection through lattice temperature mismatch analysis and leakage current detection, improving detection efficiency and reliability.

Description

Technical Field

[0001] This invention belongs to the field of electrical engineering and relates to semiconductor technology, specifically a method for detecting gallium oxide-based epitaxial structures. Background Technology

[0002] Gallium oxide (GaO)-based epitaxial structures have significant applications in the semiconductor field, particularly in the fabrication of high-frequency, high-power electronic devices, where they exhibit excellent performance. However, existing methods for detecting GaO-based epitaxial structures have significant shortcomings in practical applications, especially in terms of detection completeness and accuracy, which urgently need improvement. Current detection methods cannot perform substrate-film mismatch analysis on electronic components operating at different ambient temperatures. Under actual operating conditions, the difference in thermal expansion coefficients between GaO and the substrate material generates additional stress due to temperature changes. This stress may cause deviations in the epitaxial structure detection results, thus affecting the accuracy of the detection. Furthermore, existing technologies lack a mechanism for judging epitaxial structure anomalies based on lattice temperature mismatch data, and fail to incorporate leakage current analysis of initially normal components, resulting in a lack of systematicity and comprehensiveness in the detection process, making it difficult to meet the requirements of high-quality detection.

[0003] To address the aforementioned issues, there is an urgent need for a comprehensive testing method capable of evaluating the performance of gallium oxide-based epitaxial structures, in order to overcome the problem of unsatisfactory testing results in existing technologies. This invention aims to construct a complete testing system by analyzing the lattice temperature mismatch of electronic components and determining epitaxial structure anomalies, combined with leakage current analysis. This system will improve the accuracy and reliability of testing, providing strong support for the quality control of gallium oxide-based epitaxial structures. Summary of the Invention

[0004] To address the shortcomings of existing technologies, the present invention aims to provide a method for detecting gallium oxide-based epitaxial structures, thereby improving the completeness and accuracy of such methods.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: a method for detecting gallium oxide-based epitaxial structures, comprising the following specific steps:

[0006] Step S1: Acquire the electronic components that need to be tested for gallium oxide-based epitaxial structures, and perform lattice temperature mismatch analysis on each electronic component to obtain the component lattice temperature mismatch data;

[0007] Step S2: Based on the lattice temperature mismatch data of the components, the epitaxial structure abnormality of each electronic component to be tested is judged. Based on the judgment results, the leakage current analysis of the initially normal components is performed, and the leakage current detection data of the components is obtained based on the analysis results.

[0008] Step S3: Perform epitaxial structure detection and early warning for each component under test based on the component leakage current detection data.

[0009] Furthermore, step S1 also includes the following specific steps:

[0010] Step S11: Acquire the electronic components that need to be tested for gallium oxide-based epitaxial structure, obtain multiple electronic components to be tested, and select one sample electronic component from the multiple acquired electronic components.

[0011] Step S12: Detect the temperature change of the lattice constant of the sample electronic components, and obtain the temperature mismatch coefficient of the lattice constant corresponding to the sample electronic components based on the detection results;

[0012] Step S13: Obtain the lattice constant temperature mismatch coefficient corresponding to each electronic component to be tested, and obtain the lattice temperature mismatch data of the component.

[0013] Furthermore, step S12 also includes the following specific steps:

[0014] Step S121: During the analysis of the temperature variation of the lattice constant of the sample electronic components, several environmental detection temperatures are set for the working environment of the sample electronic components, and the set environmental detection temperatures are marked as T1 environmental test temperature to Ta environmental test temperature respectively.

[0015] Step S122: Perform lattice constant analysis on the sample electronic components at the T1 ambient test temperature, and obtain the lattice mismatch at T1 temperature based on the analysis results;

[0016] Step S123: Perform lattice constant analysis on the sample electronic components at the T1 ambient test temperature to obtain the lattice mismatch rate from T2 temperature to Ta temperature;

[0017] Step S124: Obtain the reference lattice mismatch rate of the sample electronic components at the test temperatures from T1 to Ta, and obtain the reference mismatch rate from T1 temperature to Ta temperature.

[0018] Furthermore, step S12 also includes the following specific steps:

[0019] Step S125: Calculate the difference between the lattice mismatch rate at temperature T1 and the reference mismatch rate at temperature T1, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature T1. Calculate the difference between the lattice mismatch rate at temperature T2 and the reference mismatch rate at temperature T2, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature T2. And so on, calculate the difference between the lattice mismatch rate at temperature Ta and the reference mismatch rate at temperature Ta, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature Ta.

[0020] Step S126: Summate the lattice mismatch deviation at temperature T1 to the lattice mismatch deviation at temperature Ta to obtain the comprehensive value of the temperature lattice mismatch deviation. Summate the reference mismatch rate at temperature T1 to the reference mismatch rate at temperature Ta to obtain the comprehensive value of the temperature lattice mismatch reference. Calculate the ratio of the comprehensive value of the temperature lattice mismatch deviation to the comprehensive value of the temperature lattice mismatch reference to obtain the lattice constant temperature mismatch coefficient corresponding to the sample electronic component.

[0021] Furthermore, step S122 also includes the following specific steps:

[0022] The gallium oxide epitaxial structure region corresponding to the sample electronic component is acquired, and the gallium oxide epitaxial structure region is divided into several epitaxial sub-regions. Then, a sample epitaxial sub-region is selected from the acquired multiple epitaxial sub-regions.

[0023] Several epitaxial locations are arbitrarily selected in the epitaxial sub-region of the sample, and the lattice constant of the epitaxial substrate at each epitaxial location at the T1 ambient test temperature is obtained, resulting in multiple T1 temperature substrate lattice constants.

[0024] The epitaxial thin film lattice constant at each epitaxial location point at the T1 ambient test temperature is obtained, resulting in multiple thin film lattice constants at T1 temperature.

[0025] The substrate lattice mismatch degree is obtained by calculating the substrate lattice constant and the thin film lattice constant at the same epitaxial location point at temperature T1.

[0026] The lattice mismatch of the substrate is calculated using the following formula:

[0027] ;

[0028] Where Cms is the lattice mismatch of the substrate, Djgt1 is the lattice constant of the substrate at temperature T1, and Mjgt1 is the lattice constant of the thin film at temperature T1;

[0029] The lattice mismatch of the substrate corresponding to each epitaxial location is obtained, and the average of the obtained multiple lattice mismatches is calculated to obtain the regional lattice mismatch of the sample epitaxial sub-region.

[0030] Repeat the process of obtaining the lattice mismatch of the epitaxial sub-regions corresponding to the sample, obtain the lattice mismatch of the lattice ...

[0031] Furthermore, step S2 also includes the following specific steps:

[0032] Step S21: Obtain the lattice temperature mismatch data of the components, and obtain the lattice constant temperature mismatch coefficient of each electronic component to be tested based on the lattice temperature mismatch data.

[0033] Step S22: Obtain the reference range of lattice constant temperature mismatch coefficient. If the lattice constant temperature mismatch coefficient is within the reference range, the corresponding electronic component to be tested is classified as a normal component in the initial inspection. If the lattice constant temperature mismatch coefficient is not within the reference range, the corresponding electronic component to be tested is classified as an abnormal component in the initial inspection, and the initial inspection data of the component is obtained.

[0034] Step S23: Randomly select a characteristic component from the initially inspected normal components, perform time-period leakage current detection on the characteristic component, and obtain the time-period average leakage rate of the characteristic component based on the results.

[0035] Step S24: Obtain the average leakage current rate of the bias voltage for each time period corresponding to each component that passed the initial inspection.

[0036] Step S25: Define the initial inspection data of the components and the average leakage rate of the bias voltage corresponding to each component that passed the initial inspection as the component leakage detection data.

[0037] Furthermore, step S24 also includes the following specific steps:

[0038] Step S241: During the time-period leakage current detection of the characteristic components, several reverse bias voltages of different strengths are set for the characteristic components, and a sample reverse bias voltage is selected from the set reverse bias voltages.

[0039] Step S242: Obtain the leakage rate of the bias period corresponding to each reverse bias voltage, and calculate the average of the obtained leakage rates of multiple bias periods to obtain the average leakage rate of the bias period corresponding to the characteristic component.

[0040] Furthermore, step S241 also includes the following specific steps:

[0041] The time point when the characteristic component is connected to the sample reverse bias circuit is marked as the first characteristic bias time point, the time point corresponding to the current moment is marked as the second characteristic bias time point, the time period between the first characteristic bias time point and the second characteristic bias time point is marked as the sample bias detection time period, and the sample deviation detection time period is divided into several bias detection sub-time periods.

[0042] The leakage current of the statistical characteristic components in each bias detection sub-period is calculated, and the time period length corresponding to each bias detection sub-period is obtained.

[0043] Calculate the ratio of the leakage current to the length of each bias detection sub-period to obtain multiple leakage current rates. Compare the values ​​of the multiple leakage current rates and mark the leakage current rate with the largest value as the leakage current rate of the bias time period corresponding to the reverse bias of the sample.

[0044] Furthermore, step S3 also includes the following specific steps:

[0045] Step S31: Obtain component leakage current detection data, obtain component initial inspection data based on component leakage current detection data, and obtain data for components that are normal and components that are abnormal in the initial inspection based on the component initial inspection data.

[0046] Step S32: If the component to be inspected is a component with an abnormality in the initial inspection, then issue an epitaxial structure detection abnormality warning directly for it;

[0047] Step S33: If the component to be tested is a component that passed the initial inspection, perform leakage rate analysis on it and issue a device abnormality warning based on the analysis results.

[0048] Furthermore, step S33 also includes the following specific steps:

[0049] Based on the leakage current detection data of the components, the average leakage current rate of the bias voltage corresponding to the time period of each initially normal component is obtained.

[0050] Obtain the reference value of the average leakage rate of bias voltage for each time period, and obtain the difference between the average leakage rate of bias voltage for each time period and the reference value of the average leakage rate of bias voltage for each time period to obtain the reference deviation of the average leakage rate of bias voltage for each time period.

[0051] If the average leakage rate of the bias voltage during the time period is greater than or equal to 0, it is determined that there is abnormal leakage in the initially normal components, and an abnormal leakage warning is issued for them.

[0052] If the average leakage rate of the bias voltage during the time period is less than 0, it is determined that there is no abnormal leakage in the initially inspected normal components, and there is no need to issue an abnormal leakage warning.

[0053] The beneficial effects of this invention are:

[0054] By analyzing the substrate thin film mismatch of electronic components under different ambient temperatures, the impact of differences in thermal expansion coefficients on the epitaxial structure detection results can be reduced, thus ensuring the accuracy of the detection results. Based on the lattice temperature mismatch data of the components, the epitaxial structure anomaly of each electronic component under test is judged, and leakage current analysis is combined to ensure the integrity of the epitaxial structure detection process. By setting a benchmark range for the lattice constant temperature mismatch coefficient, electronic components with potential epitaxial structure anomalies can be quickly screened, avoiding redundant detection; at the same time, the upper limit of the benchmark range is dynamically adjusted based on historical data to ensure that the screening criteria are scientific and reasonable. By conducting time-period leakage rate detection under multiple reverse bias conditions on initially normal components, especially by adopting a time-period division and maximum rate comparison mechanism, the leakage characteristics of components under different operating scenarios are accurately captured, their dynamic electrical performance stability is evaluated, and batch quality problems are identified. In summary, this invention significantly improves the efficiency and reliability of gallium oxide-based epitaxial structure detection. Attached Figure Description

[0055] Figure 1 This is an overall system block diagram of the present invention;

[0056] Figure 2 This is a schematic diagram of the gallium oxide epitaxial structure region of the present invention. Detailed Implementation

[0057] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. The illustrative embodiments and descriptions herein are used to explain the present invention, but are not intended to limit the present invention.

[0058] Example 1

[0059] Please see Figure 1 This invention provides a technical solution: a method for detecting gallium oxide-based epitaxial structures, comprising the following specific steps:

[0060] Step S1: Acquire the electronic components that need to be tested for gallium oxide-based epitaxial structures, and perform lattice temperature mismatch analysis on each electronic component to obtain the component lattice temperature mismatch data;

[0061] Step S1 further includes the following specific steps:

[0062] The electronic components that need to be tested for gallium oxide-based epitaxial structures are acquired, resulting in multiple electronic components to be tested. Then, a sample electronic component is selected from the acquired multiple electronic components.

[0063] It should be noted here that:

[0064] In this application, the electronic components to be tested specifically refer to devices with specific electrical, optical, or high-frequency functions fabricated using gallium oxide (Ga2O3) epitaxial thin films as the core material and through semiconductor processes.

[0065] The temperature variation of the lattice constant of the sample electronic components is detected, and the temperature mismatch coefficient of the lattice constant corresponding to the sample electronic components is obtained based on the detection results.

[0066] Specifically as follows:

[0067] In the process of analyzing the temperature variation of lattice constant of the sample electronic components, several environmental detection temperatures are set for the working environment of the sample electronic components, and the set environmental detection temperatures are marked as T1 environmental test temperature to Ta environmental test temperature respectively.

[0068] It should be noted here that:

[0069] In this application, T is the symbol corresponding to the environmental test temperature, and a is the quantitative value corresponding to the environmental test temperature, and a is an integer greater than 0;

[0070] In this application, the environmental testing temperatures mentioned herein refer to the rated operating temperature range of the sample electronic components;

[0071] Lattice constant analysis was performed on the sample electronic components at the T1 ambient test temperature, and the lattice mismatch at T1 temperature was obtained based on the analysis results.

[0072] Specifically as follows:

[0073] The gallium oxide epitaxial structure region corresponding to the sample electronic component is acquired, and the gallium oxide epitaxial structure region is divided into several epitaxial sub-regions. Then, a sample epitaxial sub-region is selected from the acquired multiple epitaxial sub-regions.

[0074] It should be noted here that:

[0075] Please see Figure 2 In this application, the gallium oxide epitaxial structure region specifically includes a gallium oxide epitaxial film and the epitaxial substrate corresponding to the gallium oxide epitaxial film;

[0076] Several epitaxial locations are arbitrarily selected in the epitaxial sub-region of the sample, and the lattice constant of the epitaxial substrate at each epitaxial location at the T1 ambient test temperature is obtained, resulting in multiple T1 temperature substrate lattice constants.

[0077] The epitaxial thin film lattice constant at each epitaxial location point at the T1 ambient test temperature is obtained, resulting in multiple thin film lattice constants at T1 temperature.

[0078] The substrate lattice mismatch degree is obtained by calculating the substrate lattice constant and the thin film lattice constant at the same epitaxial location point at temperature T1.

[0079] The lattice mismatch of the substrate is calculated using the following formula:

[0080] ;

[0081] Where Cms is the lattice mismatch of the substrate, Djgt1 is the lattice constant of the substrate at temperature T1, and Mjgt1 is the lattice constant of the thin film at temperature T1;

[0082] The lattice mismatch of the substrate corresponding to each epitaxial location is obtained, and the average of the obtained multiple lattice mismatches is calculated to obtain the regional lattice mismatch of the sample epitaxial sub-region.

[0083] Repeat the process of obtaining the lattice mismatch of the epitaxial sub-regions corresponding to the sample, obtain the lattice mismatch of the lattice ...

[0084] Repeat the process of obtaining the lattice mismatch rate at temperature T1, and perform lattice constant analysis on the sample electronic components at the test temperature T1 to obtain the lattice mismatch rate from temperature T2 to temperature Ta.

[0085] The reference lattice mismatch rates of the sample electronic components were obtained at the test temperatures from T1 to Ta, respectively, to obtain the reference mismatch rates from T1 temperature to Ta temperature.

[0086] It should be noted here that:

[0087] In this application, the T1 temperature reference mismatch rate to the Ta temperature reference mismatch rate referred to herein are the conventional lattice mismatch rates of qualified electronic components at environmental test temperatures from T1 to Ta.

[0088] Calculate the difference between the lattice mismatch rate at temperature T1 and the reference mismatch rate at temperature T1, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature T1. Calculate the difference between the lattice mismatch rate at temperature T2 and the reference mismatch rate at temperature T2, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature T2. And so on, calculate the difference between the lattice mismatch rate at temperature Ta and the reference mismatch rate at temperature Ta, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature Ta.

[0089] The temperature lattice mismatch deviations from T1 temperature to Ta temperature are summed to obtain the comprehensive value of temperature lattice mismatch deviations. The reference mismatch rates from T1 temperature to Ta temperature are summed to obtain the comprehensive value of temperature lattice mismatch references. The ratio of the comprehensive value of temperature lattice mismatch deviations to the comprehensive value of temperature lattice mismatch references is calculated to obtain the temperature mismatch coefficient of the lattice constant corresponding to the sample electronic component.

[0090] Repeat the process of obtaining the lattice constant temperature mismatch coefficient corresponding to the sample electronic components, and obtain the lattice constant temperature mismatch coefficient corresponding to each electronic component to be tested, so as to obtain the component lattice temperature mismatch data.

[0091] The above step S1 has the following advantages:

[0092] By detecting the temperature variation of lattice constants of gallium oxide-based epitaxial electronic components under different ambient temperatures, it is possible to comprehensively and accurately assess the lattice mismatch of components under different operating conditions. This provides key data support for predicting the performance stability and reliability of components in practical applications. At the same time, by comparing with the benchmark mismatch rate, potential performance problems can be identified, providing an important basis for process optimization and material selection, thereby ensuring that the quality and performance of components reach the optimal state.

[0093] Step S2: Based on the lattice temperature mismatch data of the components, the epitaxial structure abnormality of each electronic component to be tested is judged. Based on the judgment results, the leakage current analysis of the initially normal components is performed, and the leakage current detection data of the components is obtained based on the analysis results.

[0094] Step S2 further includes the following specific steps:

[0095] Obtain lattice temperature mismatch data of components, and obtain the lattice constant temperature mismatch coefficient of each electronic component under test based on the lattice temperature mismatch data.

[0096] Obtain the reference range of lattice constant temperature mismatch coefficient. If the lattice constant temperature mismatch coefficient is within the reference range, the corresponding electronic component to be tested is classified as a normal component in the initial inspection. If the lattice constant temperature mismatch coefficient is not within the reference range, the corresponding electronic component to be tested is classified as an abnormal component in the initial inspection, and the initial inspection data of the component is obtained.

[0097] It should be noted here that:

[0098] In this application, the lower limit of the reference range for the lattice constant temperature mismatch coefficient is 0, meaning that no lattice constant temperature mismatch has occurred.

[0099] Obtain historical test records of epitaxial structures. Based on the historical test records of epitaxial structures, obtain multiple historical test components that are the same model as the electronic components to be tested and have passed the initial test. Obtain the lattice constant temperature mismatch coefficient corresponding to each historical test component. Mark the lattice constant temperature mismatch coefficient with the smallest value as the upper limit of the lattice constant temperature mismatch coefficient reference range.

[0100] Randomly select a characteristic component from the components that pass the initial inspection, perform time-period leakage current detection on the characteristic component, and obtain the time-period average leakage rate of the characteristic component based on the results.

[0101] Specifically as follows:

[0102] During the time-period leakage current detection of characteristic components, several reverse bias voltages of different strengths are set for the characteristic components, and a sample reverse bias voltage is selected from the set reverse bias voltages.

[0103] It should be noted here that:

[0104] The multiple reverse bias voltages involved here are all within the rated bias voltage range of the characteristic components;

[0105] Leakage current analysis is performed on characteristic components under reverse bias conditions, and the leakage rate during the bias period corresponding to the reverse bias is obtained based on the analysis results.

[0106] Specifically as follows:

[0107] The time point when the characteristic component is connected to the sample reverse bias circuit is marked as the first characteristic bias time point, the time point corresponding to the current moment is marked as the second characteristic bias time point, the time period between the first characteristic bias time point and the second characteristic bias time point is marked as the sample bias detection time period, and the sample deviation detection time period is divided into several bias detection sub-time periods.

[0108] The leakage current of the statistical characteristic components in each bias detection sub-period is calculated, and the time period length corresponding to each bias detection sub-period is obtained.

[0109] Calculate the ratio of the leakage current to the length of each bias detection sub-period to obtain multiple leakage current rates. Compare the values ​​of the multiple leakage current rates and mark the leakage current rate with the largest value as the leakage current rate of the bias time period corresponding to the reverse bias of the sample.

[0110] Repeat the process of obtaining the leakage rate of the bias period corresponding to the reverse bias voltage of the sample, obtain the leakage rate of the bias period corresponding to each reverse bias voltage, and calculate the average of the obtained leakage rates of multiple bias periods to obtain the average leakage rate of the bias period corresponding to the characteristic component.

[0111] Repeat the process of obtaining the average leakage rate of bias voltage for the time period corresponding to the characteristic component, and obtain the average leakage rate of bias voltage for the time period corresponding to each initially normal component.

[0112] The initial inspection data of components and the average leakage rate of bias voltage corresponding to each component that passes the initial inspection are defined as the component leakage detection data.

[0113] The following advantages exist in step S2 above:

[0114] By setting a benchmark range for the temperature mismatch coefficient of the lattice constant, electronic components with potential anomalies in their epitaxial structures can be quickly screened out, avoiding redundant testing of abnormal components. At the same time, the upper limit of the benchmark range is dynamically determined by combining historical data to ensure that the screening criteria are scientific and reasonable. Furthermore, by conducting time-period leakage rate testing on initially normal components under multiple reverse bias conditions, especially by adopting a time-period division and maximum rate comparison mechanism, the leakage characteristics of components under different operating scenarios can be accurately captured. This not only assesses the dynamic electrical performance stability but also identifies batch quality problems through average rate analysis. Thus, a closed-loop testing system is constructed from initial screening of structural anomalies to in-depth verification of electrical performance, significantly improving testing efficiency and reliability judgment accuracy.

[0115] Step S3: Perform epitaxial structure detection and early warning for each component under test based on the component leakage current detection data;

[0116] Step S3 further includes the following specific steps:

[0117] Obtain component leakage current detection data, obtain component initial inspection data based on component leakage current detection data, and obtain data for components that pass initial inspection and components that fail initial inspection based on component initial inspection data.

[0118] If the component to be inspected is a component with an abnormality in the initial inspection, an epitaxial structure inspection abnormality warning will be issued directly for it;

[0119] If the component under test is a component that passed the initial inspection, then perform leakage rate analysis on it and issue a device anomaly warning based on the analysis results;

[0120] Specifically as follows:

[0121] Based on the leakage current detection data of the components, the average leakage current rate of the bias voltage corresponding to the time period of each initially normal component is obtained.

[0122] Obtain the reference value of the average leakage rate of bias voltage for each time period, and obtain the difference between the average leakage rate of bias voltage for each time period and the reference value of the average leakage rate of bias voltage for each time period to obtain the reference deviation of the average leakage rate of bias voltage for each time period.

[0123] It should be noted here that:

[0124] In this application, historical leakage current detection records are obtained, and several historically normal components without abnormal leakage current are obtained based on the historical leakage current detection records. The average leakage current rate of the bias voltage corresponding to each historically normal component is obtained, and the average leakage current rate of the bias voltage of the time period with the smallest value is marked as the reference deviation of the average leakage current rate of the bias voltage of the time period.

[0125] If the average leakage rate of the bias voltage during the time period is greater than or equal to 0, it is determined that there is abnormal leakage in the initially normal components, and an abnormal leakage warning is issued for them.

[0126] If the average leakage rate of the bias voltage during the time period is less than 0, it is determined that there is no abnormal leakage in the initially inspected normal components, and there is no need to issue an abnormal leakage warning.

[0127] In this application, if a corresponding calculation formula appears, the above calculation formula is a dimensionless calculation. The weighting coefficient, proportional coefficient and other coefficients in the formula are set to quantify each parameter to obtain a result value. The size of the weighting coefficient and proportional coefficient is only required to not affect the proportional relationship between the parameter and the result value.

[0128] The technical solutions of the present invention are not limited to the specific embodiments described above. Any technical modifications made in accordance with the technical solutions of the present invention fall within the protection scope of the present invention.

Claims

1. A method for detecting gallium oxide-based epitaxial structures, characterized in that, The specific steps include the following: Step S1: Acquire the electronic components that need to be tested for gallium oxide-based epitaxial structures, and perform lattice temperature mismatch analysis on each electronic component to obtain the component lattice temperature mismatch data; Step S11: Acquire the electronic components that need to be tested for gallium oxide-based epitaxial structure, obtain multiple electronic components to be tested, and select one sample electronic component from the multiple acquired electronic components. Step S12: Detect the temperature change of the lattice constant of the sample electronic components, and obtain the temperature mismatch coefficient of the lattice constant corresponding to the sample electronic components based on the detection results; Step S13: Obtain the lattice constant temperature mismatch coefficient for each electronic component to be tested, and obtain the lattice temperature mismatch data of the component. Step S2: Based on the lattice temperature mismatch data of the components, the epitaxial structure abnormality of each electronic component to be tested is judged. Based on the judgment results, the leakage current analysis of the initially normal components is performed, and the leakage current detection data of the components is obtained based on the analysis results. Step S21: Obtain the lattice temperature mismatch data of the components, and obtain the lattice constant temperature mismatch coefficient of each electronic component to be tested based on the lattice temperature mismatch data. Step S22: Obtain the reference range of lattice constant temperature mismatch coefficient. If the lattice constant temperature mismatch coefficient is within the reference range, the corresponding electronic component to be tested is classified as a normal component in the initial inspection. If the lattice constant temperature mismatch coefficient is not within the reference range, the corresponding electronic component to be tested is classified as an abnormal component in the initial inspection, and the initial inspection data of the component is obtained. Step S23: Randomly select a characteristic component from the initially inspected normal components, perform time-period leakage current detection on the characteristic component, and obtain the time-period average leakage rate of the characteristic component based on the results. Step S24: Obtain the average leakage current rate of the bias voltage for each time period corresponding to each component that passed the initial inspection. Step S25: Define the initial inspection data of components and the average leakage rate of bias voltage corresponding to each component that passes the initial inspection as the component leakage detection data. Step S3: Perform epitaxial structure detection and early warning for each component under test based on the component leakage current detection data; Step S12 further includes the following specific steps: Step S121: During the analysis of the temperature variation of the lattice constant of the sample electronic components, set the T1 environmental test temperature to the Ta environmental test temperature for the working environment of the sample electronic components. Step S122: Perform lattice constant analysis on the sample electronic components at the T1 ambient test temperature, and obtain the lattice mismatch at T1 temperature based on the analysis results; Step S123: Perform lattice constant analysis on the sample electronic components at the T1 ambient test temperature to obtain the lattice mismatch rate from T2 temperature to Ta temperature; Step S124: Obtain the reference lattice mismatch rate of the sample electronic components at the test temperatures from T1 to Ta, and obtain the reference mismatch rate from T1 temperature to Ta temperature. Step S125: Calculate the difference between the lattice mismatch rate at temperature T1 and the reference mismatch rate at temperature T1, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature T1. Calculate the difference between the lattice mismatch rate at temperature Ta and the reference mismatch rate at temperature Ta, and take the absolute value of the difference to obtain the lattice mismatch deviation at temperature Ta. Step S126: Summate the lattice mismatch deviation at temperature T1 to the lattice mismatch deviation at temperature Ta to obtain the comprehensive value of the temperature lattice mismatch deviation. Summate the reference mismatch rate at temperature T1 to the reference mismatch rate at temperature Ta to obtain the comprehensive value of the temperature lattice mismatch reference. Calculate the ratio of the comprehensive value of the temperature lattice mismatch deviation to the comprehensive value of the temperature lattice mismatch reference to obtain the lattice constant temperature mismatch coefficient corresponding to the sample electronic component.

2. The method for detecting gallium oxide-based epitaxial structures according to claim 1, characterized in that, Step S122 further includes the following specific steps: The gallium oxide epitaxial structure region corresponding to the sample electronic component is acquired, and the gallium oxide epitaxial structure region is divided into several epitaxial sub-regions. Then, a sample epitaxial sub-region is selected from the acquired multiple epitaxial sub-regions. Several epitaxial locations are arbitrarily selected in the epitaxial sub-region of the sample, and the lattice constant of the epitaxial substrate at each epitaxial location at the T1 ambient test temperature is obtained, resulting in multiple T1 temperature substrate lattice constants. The epitaxial thin film lattice constant at each epitaxial location point at the T1 ambient test temperature is obtained, resulting in multiple thin film lattice constants at T1 temperature. The substrate lattice mismatch degree is obtained by calculating the substrate lattice constant and the thin film lattice constant at the same epitaxial location point at temperature T1. The lattice mismatch of the substrate is calculated using the following formula: ； Where Cms is the lattice mismatch of the substrate, Djgt1 is the lattice constant of the substrate at temperature T1, and Mjgt1 is the lattice constant of the thin film at temperature T1; The lattice mismatch of the substrate corresponding to each epitaxial location is obtained, and the average of the obtained multiple lattice mismatches is calculated to obtain the regional lattice mismatch of the sample epitaxial sub-region. The lattice mismatch of the regional film in each epitaxial sub-region at the test temperature T1 is obtained, resulting in multiple lattice mismatches of the regional film. The average of the multiple lattice mismatches of the regional film is then calculated to obtain the lattice mismatch rate at temperature T1.

3. The method for detecting gallium oxide-based epitaxial structures according to claim 1, characterized in that, Step S24 further includes the following specific steps: Step S241: During the time-period leakage current detection of the characteristic components, several reverse bias voltages of different strengths are set for the characteristic components, and a sample reverse bias voltage is selected from the set reverse bias voltages. Step S242: Obtain the leakage rate of the bias period corresponding to each reverse bias voltage, and calculate the average of the obtained leakage rates of multiple bias periods to obtain the average leakage rate of the bias period corresponding to the characteristic component.

4. The method for detecting gallium oxide-based epitaxial structures according to claim 3, characterized in that, Step S241 further includes the following specific steps: The time point when the characteristic component is connected to the sample reverse bias circuit is marked as the first characteristic bias time point, the time point corresponding to the current moment is marked as the second characteristic bias time point, the time period between the first characteristic bias time point and the second characteristic bias time point is marked as the sample bias detection time period, and the sample deviation detection time period is divided into several bias detection sub-time periods. The leakage current of the statistical characteristic components in each bias detection sub-period is calculated, and the time period length corresponding to each bias detection sub-period is obtained. Calculate the ratio of the leakage current to the length of each bias detection sub-period to obtain multiple leakage current rates. Compare the values ​​of the multiple leakage current rates and mark the leakage current rate with the largest value as the leakage current rate of the bias time period corresponding to the reverse bias of the sample.

5. The method for detecting gallium oxide-based epitaxial structures according to claim 1, characterized in that, Step S3 further includes the following specific steps: Step S31: Obtain component leakage current detection data, obtain component initial inspection data based on component leakage current detection data, and obtain data for components that are normal and components that are abnormal in the initial inspection based on the component initial inspection data. Step S32: If the component to be inspected is a component with an abnormality in the initial inspection, then issue an epitaxial structure detection abnormality warning directly for it; Step S33: If the component to be tested is a component that passed the initial inspection, perform leakage rate analysis on it and issue a device abnormality warning based on the analysis results.

6. The method for detecting gallium oxide-based epitaxial structures according to claim 5, characterized in that, Step S33 further includes the following specific steps: Based on the leakage current detection data of the components, the average leakage current rate of the bias voltage corresponding to the time period of each initially normal component is obtained. Obtain the reference value of the average leakage rate of bias voltage for each time period, and obtain the difference between the average leakage rate of bias voltage for each time period and the reference value of the average leakage rate of bias voltage for each time period to obtain the reference deviation of the average leakage rate of bias voltage for each time period. If the average leakage rate of the bias voltage during the time period is greater than or equal to 0, it is determined that there is abnormal leakage in the initially normal components, and an abnormal leakage warning is issued for them. If the average leakage rate of the bias voltage during the time period is less than 0, it is determined that there is no abnormal leakage in the initially inspected normal components, and there is no need to issue an abnormal leakage warning.

Images