Light emitting device

Abstract

A light emitting device has a light source arrangement consisting of semiconductor light sources arranged laterally side by side and a reflector arrangement consisting of retroreflectors arranged laterally side by side. The light source arrangement and the reflector arrangement form a common lighting area of the lighting device in which light emission can be caused by the light source arrangement and light reflection can be caused by the reflector arrangement. The semiconductor light source is not covered by the retroreflector.

Description

Technical Field

[0001] This invention relates to a light-emitting device.

[0002] This application claims priority to German patent application 10 2023 118 572.1, the disclosure of which is incorporated herein by reference. Background Technology

[0003] The light-emitting device may have one or more radiating areas in which light can be emitted. Light emission can be achieved using a semiconductor light source, such as an LED. Such a light-emitting device can be used, for example, in the taillights of motor vehicles. Retroreflective areas may be formed or legally defined near and spatially separated from the radiating areas. Thus, even when the light-emitting device is turned off, good visibility can be achieved by illuminating with external light radiation. Summary of the Invention

[0004] The purpose of this invention is to provide an improved light-emitting device.

[0005] The objective is achieved by a light-emitting device having the features of claim 1. Other advantageous embodiments of the invention are given in the dependent claims.

[0006] According to one aspect of the present invention, a light-emitting device is provided. The light-emitting device has a light source arrangement consisting of semiconductor light sources arranged side-by-side in a transverse direction and a reflector arrangement consisting of retroreflectors arranged side-by-side in a transverse direction. The light source arrangement and the reflector arrangement form a common light-emitting area of ​​the light-emitting device, in which light emission can be induced by the light source arrangement and light reflection can be induced by the reflector arrangement. Here, the semiconductor light sources are not covered by the retroreflectors.

[0007] In the proposed light-emitting device, a scheme is followed whereby the light-emitting region and the retroreflection region are combined rather than spatially separated. The light-emitting device has a light source arrangement consisting of laterally arranged semiconductor light sources and a reflector arrangement consisting of laterally arranged retroreflectors. The light-emitting device is configured such that the two arrangements are combined or merged to form a common, or in other words, integrated, light-emitting region. In this manner, within the light-emitting region of the light-emitting device, not only can self-emission or active emission be induced by the emission of light from the semiconductor light sources of the light source arrangement, but passive emission can also be induced by the retroreflection of external light radiation at the retroreflectors of the reflector arrangement. For this purpose, the light source arrangement and the reflector arrangement, or the regions containing the light source arrangement and the reflector arrangement (light-emitting region, retroreflection region), can overlap each other.

[0008] The proposed design of the light-emitting device offers the following feasibility: it can be implemented with fewer components and lower cost compared to conventional devices that have spatially separated retroreflective areas. Furthermore, a more compact and space-saving construction can be considered for the light-emitting device. Moreover, a uniform appearance is feasible, not only in the self-illuminating or active operation of the light-emitting device but also in its reflective state.

[0009] The light-emitting device is also configured such that the semiconductor light source is not covered by the retroreflector. Therefore, in this configuration, no semiconductor light source is covered by the retroreflector. This avoids interference with the self-emissive or active operation achieved through the arrangement of the light source, which could be caused by the arrangement of the reflectors.

[0010] Therefore, the light-emitting device can have a self-emissive area with retroreflective properties without negatively impacting its self-emissive characteristics. Similarly, the light-emitting device can have a retroreflective area extended by the self-emissive properties. Thus, the light-emitting device can be applied, for example, to achieve taillights with integrated retroreflective properties, or retroreflective road signs with integrated self-emissive functionality.

[0011] The following describes other feasible details and implementation methods that may be considered for use in light-emitting devices.

[0012] When viewed along the radiating direction, the semiconductor light source exhibits the characteristic mentioned above that it is not covered by a retroreflector. The radiating direction can be a main radiating direction, along which the majority of the light radiation is emitted by the semiconductor light source. The main radiating direction can be perpendicular to the plane in which the semiconductor light source may be located.

[0013] A semiconductor light source arranged via a light source capable of generating and emitting light radiation can be an LED (light-emitting diode). This allows for a cost-effective construction of the light-emitting device. The semiconductor light source can also be an unpackaged light-emitting semiconductor chip or an LED chip. Such a semiconductor chip can have a sequence of semiconductor layers for generating radiation, and may, if necessary, have a conversion layer for converting the radiation.

[0014] By means of a retroreflector arranged with reflectors, retroreflection of external light radiation, that is, light radiation generated or originating from the outside, can be induced. Here, a large portion of the incident light radiation can be reflected back towards or substantially towards the incident light radiation. The proportion of light radiation reflected back can be larger or significantly larger than in the case of diffuse reflection.

[0015] Retroreflectors in a reflector arrangement can be implemented in the form of suitable structures or components. A retroreflector can have at least one reflecting surface. In designs with reflecting surfaces, the reflecting surfaces can be curved and can be partially spherical or hemispherical. Alternatively, multiple or three reflecting surfaces oriented perpendicularly to each other can exist. Retroreflectors can be implemented as corner reflectors (also called angular reflectors), lens reflectors, or reflectors with curved reflecting surfaces.

[0016] It is feasible to arrange the semiconductor light source and the retroreflector in a common plane or substantially in a common plane. This allows the light-emitting device to have a low structural height. Alternatively, the semiconductor light source and the retroreflector can be arranged in planes that are staggered from each other.

[0017] In a light-emitting device, light radiation generated by a semiconductor light source and external light radiation can be emitted and reflected away from the light-emitting device from one side or about one side. The light-emitting device can have a planar shape with two opposite main sides, i.e., the side with the largest area. This side can be one of the two main sides of the light-emitting device.

[0018] In another embodiment, the retroreflector of the reflector arrangement is positioned in the region adjacent to and between the semiconductor light source and the semiconductor light source. This can be observed when viewed in a top view of the light-emitting device or its light-emitting area. This design reliably avoids interference with the light-emitting operation of the semiconductor light source.

[0019] In another embodiment, the semiconductor light source is located in the central region of the retroreflector. This can also be observed in a top view of the light-emitting device or its light-emitting area. This approach also avoids affecting the operation of the semiconductor light source. Furthermore, it facilitates a compact structure for the light-emitting device. Here, the light-emitting device can have a small application surface. In this design, for the semiconductor light source centrally positioned relative to the retroreflector, a smaller structure compared to the retroreflector can be considered; in other words, the retroreflector can be configured to be larger or significantly larger than the semiconductor light source, so as to achieve the most unobstructed retroreflection performance.

[0020] The light-emitting device may have a carrier structure, and a semiconductor light source arranged as a light source and a retroreflector arranged as a reflector may be disposed, formed, or present on or within the carrier structure, and the semiconductor light source and the retroreflector may be held in place by means of the carrier structure. The semiconductor light source and the retroreflector may be located on the same side or adjacent side of the carrier structure or staggered from each other. The carrier structure may have one or more substrates or layers. The substrates or layers may be transparent or partially transparent. The substrates or layers may also be flexibly constructed, thus bendable. The semiconductor light source and the retroreflector may be disposed on the same substrate or the same layer, or on different substrates or layers.

[0021] In another embodiment, the light-emitting device has a carrier substrate on which a semiconductor light source is disposed. The carrier substrate can be a transparent or opaque substrate material, such as a plastic material. Furthermore, the carrier substrate can be formed with printed conductors, to which the semiconductor light source can be electrically connected, and via the printed conductors, the semiconductor light source can be electrically manipulated for light emission. During manufacturing, the semiconductor light source can be soldered or bonded to the carrier substrate, and disposed on the carrier substrate using processes such as pick and place, LIFT (laser-induced forward transfer), stamping, and electrostatic assisted stamping.

[0022] In another embodiment, the retroreflector of the reflector arrangement also exists on the carrier substrate. This allows for cost-effective manufacturing of the light-emitting device.

[0023] In another embodiment, the semiconductor light source and the retroreflector are located on the same side, i.e., on the same substrate side of the carrier substrate. Thus, the light-emitting device can be characterized by a compact and space-saving construction.

[0024] In another embodiment, the semiconductor light source of the light source arrangement and the retroreflector of the reflector arrangement are located on opposite sides of the carrier substrate. This design allows the light source arrangement and the reflector arrangement to be formed on the carrier substrate without compromising either of the other arrangements.

[0025] In another embodiment, the light-emitting device has an additional substrate on which a retroreflector of the reflector arrangement is located. Corresponding to the carrier substrate, the additional substrate can have a transparent or opaque substrate material, such as a plastic material. This design also allows the light source arrangement and the reflector arrangement to be configured without compromising either of the other arrangements, currently configured on the carrier substrate and the additional substrate. The carrier substrate and the additional substrate can be connected to each other in a suitable manner, for example by bonding, or also by lamination or partial fusion.

[0026] In a design scheme for a light-emitting device, a carrier substrate supporting a light source arrangement and another substrate supporting a reflector arrangement can be stacked vertically. Here, the carrier substrate and the other substrate can be arranged such that the semiconductor light source is covered by the other substrate or the retroreflector is covered by the carrier substrate. By using a transparent carrier or substrate material for the respective substrates, unobstructed light emission from the semiconductor light source and unobstructed retroreflection from the retroreflector can be achieved. Furthermore, the respective substrates covering the semiconductor light source or retroreflector can be flexibly constructed to allow for secure fastening to the other substrate.

[0027] In another embodiment, the retroreflector arrangement is realized by means of a surface structure. In the case of a design where the retroreflector is on a carrier substrate, the surface structure is formed on the carrier substrate; and in the case of a design where the retroreflector is on another substrate, the surface structure is formed on that other substrate. By using the surface structure, the retroreflection characteristics of the light-emitting device can be reliably determined. The surface structure can be a three-dimensional structure. The surface structure can be produced using processes such as embossing, milling, printing, or by performing a molding process.

[0028] In another embodiment, the retroreflector arrangement is achieved by means of a recess. The recess is provided with a metallized portion. In this manner, effective reflection or specular reflection can be reliably achieved, thereby realizing the proposed retroreflection. The metallized recess can be formed as a retroreflector in the form of an angle reflector or a concave mirror. The recess can be a concave portion.

[0029] When a retroreflector, implemented as a metallized void, is constructed on a carrier substrate, the metallized void can be located on a side of the carrier substrate where the semiconductor light source is also disposed. Alternatively, the retroreflector can be disposed on another substrate. In this design, the metallized void forming the retroreflector can exist on a side of another substrate that points in the same direction as the light emitted by the semiconductor light source.

[0030] Regarding the design of a retroreflector in the form of a metallized void on a carrier substrate, another embodiment proposes that the printed wiring of the carrier substrate is simultaneously formed through the metallized portion. Therefore, the metallized portion exists not only in the region of the void but also in other parts of the carrier substrate, where printed wiring can be formed. This method allows for cost-effective manufacturing of the light-emitting device. Depending on the reflectivity of the metallized portion used, it is also conceivable to provide an additional metal coating in the regions of the void and the retroreflector.

[0031] To achieve retroreflection in a light-emitting device, mirror reflection using a metallized portion can be employed. Reflection performance based on different refractive indices is also feasible. In this context, the following design schemes can be considered.

[0032] In another embodiment, the retroreflector arrangement is achieved by means of a void in the carrier substrate. Adjacent to the carrier substrate is a transparent layer that fills the void, and this transparent layer has a higher refractive index than the carrier substrate. The layer in question can be made of a plastic material. In this design, total internal reflection can be induced in the region of the void due to the difference in refractive index, thus causing retroreflection. The void in the carrier substrate and the layer used can form a retroreflector in the form of an angled reflector or a reflector with a curved reflective surface. The void and the layer filling the void can exist on the side of the carrier substrate where a semiconductor light source is also disposed. The void can be a recess. This also applies to the following design.

[0033] In another embodiment, the retroreflector arrangement is achieved by means of a void in a first layer disposed on a carrier substrate. Adjacent to the first layer is a transparent second layer that fills the void, having a higher refractive index than the first layer. The second layer can be made of a plastic material. The first layer can be transparent or opaque, and can also be made of a plastic material. In this design, total internal reflection can also be induced in the region of the void due to the difference in refractive index, thus causing retroreflection. Through the void in the first layer and these two layers, a retroreflector in the form of an angled reflector or a reflector with a curved reflective surface can be formed. The first layer can exist on the carrier substrate at the side where the semiconductor light source is also disposed. As long as a design with a semiconductor light source centrally positioned relative to the retroreflector is applied, the semiconductor light source can be disposed within the void in the first layer.

[0034] In another embodiment, the carrier substrate has a transparent substrate material or is made of a transparent substrate material, allowing the carrier substrate to be transmitted. The retroreflector arrangement is achieved by means of a protrusion on the carrier substrate. The protrusion exists on a side of the carrier substrate opposite to another side of the carrier substrate, on which the semiconductor light source is disposed. In this design, total internal reflection can also be induced in the region of the protrusion due to the refractive index difference, thereby causing retroreflection. The refractive index difference can occur between the carrier substrate and the medium present in the region of the protrusion, such as air, or other materials depending on the design or application of the light-emitting device. The protrusion on the carrier substrate can form a retroreflector in the form of an angle reflector or a reflector with a curved reflective surface.

[0035] In another embodiment, the carrier substrate and the additional substrate are each made of a transparent substrate material, or both the carrier substrate and the additional substrate are made of transparent substrate materials, allowing both substrates to transmit light. Here, the two substrates can be made of the same or different substrate materials. The retroreflector arrangement is achieved by means of a protrusion on the additional substrate. The carrier substrate and the additional substrate are arranged such that the semiconductor light source and the protrusion are on opposite sides of the arrangement formed by the carrier substrate and the additional substrate. In this design, total internal reflection can also be induced in the region of the protrusion due to the difference in refractive index, thereby causing retroreflection. The difference in refractive index can occur between the additional substrate and the medium present in the region of the protrusion, such as air, or other materials depending on the design or application of the light-emitting device. The protrusion on the additional substrate can form a retroreflector in the form of an angle reflector or a reflector with a curved reflective surface.

[0036] Regarding the above design scheme, it is feasible to alternatively provide a metallized portion in the area of ​​the raised portion. In this manner, retroreflection can be based on specular reflection from the raised portion.

[0037] In another embodiment, the retroreflector of the reflector arrangement is implemented as a separate component applied to a carrier substrate or another substrate. In this context, "separate" means that during manufacturing, the retroreflector can be produced independently or independently of the respective substrate and subsequently mounted on the substrate in question. In this design, the retroreflector can be mounted on the carrier substrate or another substrate using the same mounting techniques that can be considered for semiconductor light sources. This approach can save on process costs and enables cost-effective manufacturing of the light-emitting device. In this sense, the retroreflector can be fastened to the carrier substrate or another substrate by soldering or bonding, and is mounted on the respective substrate by processes such as pick and place, LIFT, stamping, and electrostatic assisted stamping. Retroreflectors used as separate components can be corner reflectors, such as three-sided mirrors or prisms, as well as lens reflectors or hemispherical reflectors.

[0038] The following additional features can achieve or facilitate a uniform appearance of the light-emitting device to the observer. The semiconductor light sources in the light source arrangement can have lateral dimensions less than one millimeter or in the micrometer range. For example, dimensions in the range of one hundred micrometers or smaller are feasible. The semiconductor light source used can be, for example, a micro-LED. Furthermore, for the semiconductor light sources or two adjacent semiconductor light sources, a spacing in the single-digit millimeter range or smaller can be provided. For example, the spacing can be less than two millimeters, and for example, in the range of half a millimeter. The same or similar descriptions regarding lateral dimensions and spacing can be considered for retroreflectors in the reflector arrangement.

[0039] Semiconductor light sources arranged in a regular grid can be used for the light source arrangement. The same principle applies to retroreflectors in the reflector arrangement. Furthermore, irregular or differently sized arrangements of semiconductor light sources and / or retroreflectors are feasible. In this manner, the combined light-emitting area of ​​the light-emitting device can be realized as sub-regions with different brightness or light intensity and / or different reflection intensities.

[0040] The light-emitting device can be used for the following products and applications: self-illuminating reflectors; traffic sign lighting; signal lights; vehicle lighting; taillights; billboards.

[0041] Regarding this application, or others, the light-emitting device can be embedded in transparent materials or composite glass, for example. Furthermore, the light-emitting device can have a flat or planar shape, or a curved shape. The light-emitting device or its integrated light-emitting area can also be configured in different geometries. For example, rectangular or circular light-emitting areas, or light-emitting areas with other shapes, such as traffic symbols or signs, are feasible.

[0042] The advantageous embodiments and improvements of the invention set forth above and / or described in the dependent claims may be applied individually, except, for example, where the relevance is clear or the alternatives are incompatible, or, however, may be applied in any combination thereof. Attached Figure Description

[0043] The features, characteristics, and advantages of the present invention described above, and the ways and methods of achieving these features, characteristics, and advantages, become clearer and easier to understand in conjunction with the following description of the embodiments, which are illustrated in detail with reference to the accompanying drawings. The drawings show:

[0044] Figure 1 A side view of a light-emitting device is shown, the device having a light source arrangement composed of semiconductor light sources and a reflector arrangement composed of retroreflectors, wherein the two arrangements together form an integrated light-emitting area of ​​the light-emitting device, and wherein the self-emissive operation of the light-emitting device is shown.

[0045] Figure 2 Show Figure 1 A side view of the light-emitting device, showing the reflection state of the light-emitting device;

[0046] Figure 3 and Figure 4 The diagram shows a side view and a top view of a light-emitting device having a carrier substrate for supporting a semiconductor light source and a retroreflector;

[0047] Figure 5 and Figure 6The diagram shows a side view and a top view of an additional light-emitting device having a carrier substrate for supporting a semiconductor light source and a retroreflector.

[0048] Figure 7 and Figure 8 The diagram shows a side view and a top view of a light-emitting device having a carrier substrate for supporting a semiconductor light source and an additional substrate for supporting a retroreflector.

[0049] Figure 9 and Figure 10 The side and top views of an additional light-emitting device are shown, the additional light-emitting device having a carrier substrate for supporting a semiconductor light source and an additional substrate for supporting a retroreflector;

[0050] Figure 11 and Figure 12 The diagram shows a side view and a top view of a light-emitting device having a carrier substrate for supporting a semiconductor light source, wherein the carrier substrate has a retroreflector in the form of a metallized void;

[0051] Figure 13 and Figure 14 The side and top views of an additional light-emitting device are shown, the additional light-emitting device having a carrier substrate having a retroreflector in the form of a metallized void;

[0052] Figure 15 and Figure 16 The side and top views of an additional light-emitting device are shown, the additional light-emitting device having a carrier substrate having a retroreflector in the form of a metallized void;

[0053] Figure 17 and Figure 18 A side view of a light-emitting device is shown, the device having a carrier substrate for supporting a semiconductor light source and an additional substrate, wherein the additional substrate has a retroreflector in the form of a metallized void;

[0054] Figure 19 and Figure 20 A side view of the light-emitting device is shown, wherein the retroreflector is formed by a void in a layer in or on a carrier substrate and an additional layer that fills the void;

[0055] Figure 21 A side view of the light-emitting device is shown, in which the retroreflector is formed through a ridge on the rear side of the carrier substrate;

[0056] Figure 22 A side view of a light-emitting device is shown, the device having a retroreflector disposed on the rear side of a carrier substrate;

[0057] Figure 23 A side view of a light-emitting device is shown, the device having a carrier substrate, wherein a retroreflector is formed through a protrusion on the rear side of the carrier substrate, and a semiconductor light source is centrally disposed on the carrier substrate relative to the retroreflector.

[0058] Figure 24 A side view of a light-emitting device is shown, the device having a carrier substrate and an additional substrate, wherein a retroreflector is formed through a protrusion on the rear side of the additional substrate, and a semiconductor light source is centrally disposed on the carrier substrate relative to the retroreflector.

[0059] Figure 25 A side view of a light-emitting device is shown, wherein a retroreflector is formed by a void in a layer disposed on a carrier substrate and another layer filling the void, and a semiconductor light source is disposed within the void on the carrier substrate;

[0060] Figure 26 A side view of the light-emitting device is shown, wherein the retroreflector is formed through a void in the carrier substrate and a layer that fills the void;

[0061] Figure 27 A side view of the light-emitting device is shown, in which the retroreflector is formed through a ridge on the rear side of the carrier substrate;

[0062] Figure 28 A side view of a light-emitting device is shown, the device having a retroreflector disposed on the rear side of a carrier substrate;

[0063] Figure 29 A side view of a light-emitting device with a curved shape is shown; and

[0064] Figure 30 A side view of a light-emitting device is shown, the device having semiconductor light sources and / or retroreflectors located on both sides. Detailed Implementation

[0065] The design of the light-emitting device 100 is described based on schematic diagrams. The light-emitting device 100 is based on a combination of a light-emitting surface and a retroreflective surface formed by merging or stacking the light source arrangement 110 and the reflector arrangement 120, resulting in a uniformly integrated light-emitting area 180. Thus, the light-emitting device 100 can be implemented in a cost-effective manner with a compact size and small layer thickness. It should be noted that the schematic diagrams may not be to scale. Therefore, for better understanding, the components and structures shown in the figures may be shown exaggeratedly or reduced in size. It should also be noted that features and details mentioned with respect to one design may also apply to other design options, and multiple design options and their features may be combined with each other. Consistent features may be described in detail only with respect to one design option. Feasible manufacturing processes are also discussed below. Manufacturing is not depicted in the figures.

[0066] Figure 1 and Figure 2 A side view of the light-emitting device 100 in different operating states is shown. The light-emitting device 100 has a light source arrangement 110 composed of laterally arranged semiconductor light sources 111 and a reflector arrangement 120 composed of laterally arranged retroreflectors 121. These two arrangements 110 and 120 are combined and overlap each other, such that they form a common light-emitting area 180 of the light-emitting device 100. In the combined light-emitting area 180, not only can light be emitted as shown in… Figure 1 As shown in the diagram, the emission of light radiation 200 from the semiconductor light source 111 arranged in the light source arrangement 110 induces active or spontaneous emission, and can be achieved as described in... Figure 2 As shown in the figure, passive luminescence is caused by the retroreflection of external light radiation 201 at the retroreflector 121 of the reflector arrangement 120.

[0067] The light-emitting device 100 is further configured such that the semiconductor light source 111 is not covered by the retroreflector 121. This feature is present when viewed in a top view of the light-emitting device 100 or its light-emitting region 180, or in other words, when viewed in the radial direction with respect to the semiconductor light source 111. In this manner, damage to the self-illuminating operation of the light-emitting device 100 caused by the reflector arrangement 120 can be avoided.

[0068] The light-emitting device 100 has a planar shape with two opposite main sides, i.e., the sides with the largest area. Light radiation 200 generated by the semiconductor light source 111 and light radiation 201 from the outside are radiated and reflected from one of the two main sides or about one of the two main sides away from the light-emitting device 100. Figure 1 and Figure 2In the side views of other figures, this is the upward-pointing side. The side in question may be referred to as the front side of the light-emitting device 100, or also as the radiating side and the reflecting side. Due to the planar shape of the light-emitting device 100, the integrated light-emitting area 180 may also be referred to as the light-emitting surface.

[0069] As in Figure 1 and Figure 2 As shown in the diagram, the semiconductor light source 111 and the retroreflector 121 can be arranged in a manner distributed in a common plane or substantially distributed in a common plane. Alternatively, the semiconductor light source 111 and the retroreflector 121 can be arranged in planes that are staggered from each other. Furthermore, viewed in a top view of the light-emitting device 100 or its front side, the semiconductor light source 111 and the retroreflector 121 can be arranged laterally or alternately laterally side by side. This also... Figure 1 and Figure 2 As shown in the figure. Alternatively, in a top view of the light-emitting device 100 or its front side, the semiconductor light source 111 can be centrally positioned relative to the retroreflector 121. Possible designs are illustrated in the following figures.

[0070] Figure 1 A light-emitting device 100 is shown in active self-emissive operation, in which light radiation 200 generated by a semiconductor light source 110 is emitted from the light-emitting device 100. This is achieved through corresponding electrical control of the semiconductor light source 110. The light radiation 200 can be white or other colored light radiation. It is also possible that the light radiation 200 generated by a single, multiple, or grouped semiconductor light sources 110 may differ in color. In this sense, the light radiation 200 can include different light or partial radiation. Figure 1 As indicated in the document, light radiation 200 can be emitted in different directions away from the light-emitting device 100 or its front side.

[0071] It is feasible that the main portion of the light radiation 200 is emitted from the light-emitting device 100 in the main radiation direction. The main radiation direction can be perpendicular to the plane in which the semiconductor light source 111 is positioned. Figure 1 In the diagram, the middle arrow of the three dashed arrows corresponds to the main radiation direction. The feature described above, namely that the semiconductor light source 111 is not obstructed by the retroreflector 121, can exist with respect to the main radiation direction.

[0072] Figure 2The diagram illustrates a light-emitting device 100 in a passive reflection state, in which externally generated light radiation 201 is reflected at the retroreflector 121 of the light-emitting device 100, thus undergoing retroreflection at the light-emitting device 100. Here, a large portion or main part of the incident light radiation 201 can be reflected back by the light-emitting device 100 along or substantially along the direction of the incident light radiation 201. This situation occurs in… Figure 2 The dashed arrow used for light radiation 201 is indicated in the image. Figure 2 Unlike the idealized diagram, the light radiation 201 can be reflected back along the direction of the incident light radiation 201 within a preset angle range.

[0073] The light-emitting device 100 can have a higher efficiency than in the past. Figure 1 and Figure 2 The diagram shows a significantly larger number of semiconductor light sources 111 and retroreflectors 121. In this sense, it can be... Figure 1 and Figure 2 This is a partial view of the light-emitting device 100. The corresponding situation applies to the following figures.

[0074] In addition to the light source arrangement 110 and the reflector arrangement 120, the light-emitting device 100 also has a carrier structure 140 for holding the semiconductor light source 111 and the retroreflector 121, which may be disposed, constituted, or present at or on the carrier structure. Figure 1 and Figure 2 As shown in the diagram, the carrier structure 140 can be implemented as a single substrate or a single layer. Multi-piece or multi-layer designs with multiple substrates or layers are also feasible. Here, the light source arrangement 110 and the reflector arrangement 120 can exist on one side of the carrier structure 140, thus existing in a plane or substantially in a plane, as shown in... Figure 1 and Figure 2 As indicated in the figure, it may exist on the opposite side of the carrier structure 140 and / or in a staggered plane. Depending on the application, the carrier structure 140 may be at least partially transparent and / or flexible. Possible design options are illustrated in the following figures.

[0075] The semiconductor light source 111 of the light-emitting device 100 can be an LED (light-emitting diode). Alternatively, the semiconductor light source 111 can be an unpackaged light-emitting semiconductor chip or an LED chip. Here, the semiconductor chip can have a sequence of semiconductor layers for generating radiation, and if necessary, a conversion layer (not shown) for radiation conversion.

[0076] The following figures illustrate feasible or other feasible design options, such as those that may be considered for use in the light-emitting device 100 described herein. In the context described, [the following figures may be used]. Figure 1 and Figure 2 The light-emitting device 100 is understood as a basic concept, and the design schemes described below can be based on this basic concept. In the design scheme, the corresponding light-emitting device 100 also includes a light source arrangement 110 composed of semiconductor light sources 111 and a reflector arrangement 120 composed of retroreflectors 121, which together form an integrated light-emitting area 180 of the light-emitting device 100. The accompanying drawings here particularly illustrate feasible structural forms of the carrier structure 140 and the retroreflector 121.

[0077] Figure 3 and Figure 4 The diagram shows a side view and a top view of a light-emitting device 100, which has a carrier substrate 141 as a carrier structure. The carrier substrate 141 may be made of a transparent or opaque substrate material, such as a plastic material. A semiconductor light source 111 and a retroreflector 121 of the light-emitting device 100 are disposed on one side of the carrier substrate 141, thus being in a common plane or substantially in a common plane. On the relevant side, the carrier substrate 141 has contact metallization portions in the form of printed conductors 145 for electrical supply to the semiconductor light source 111, the semiconductor light source 111 being electrically connected to the printed conductors. For this purpose, the semiconductor light source 111 may have contact elements on the side or rear side facing the carrier substrate 141, the contact elements being connected to the printed conductors 145 or the contact surfaces of the printed conductors 145 (not shown) via a conductive connector, such as flux or conductive adhesive. The printed conductor 145 can be interrupted in the region of the semiconductor light source 111, such that the contact element of the semiconductor light source 111 can be electrically connected at said location to one of the two spaced-apart printed conductors 145 (see [reference]). Figure 15 (Regarding the design scheme for the interruption of printed conductor 145). The retroreflector 121 can be fastened to the carrier substrate 141 (not shown) via adhesive or similarly via solder.

[0078] exist Figure 3 In the side view, the arrow indicates a vertically upward direction 210, in which light radiation 200 generated by the semiconductor light source 111 can be emitted and external light radiation 201 can be reflected back by the light-emitting device 100 (not shown). Furthermore, light radiation can also occur in other directions inclined to direction 210 (see [reference needed]). Figure 1 The same applies to retroreflection, which is related to the incident light radiation 201 or its angle of incidence (see...). Figure 2In this sense, direction 210 can indicate a half-space into which corresponding light radiations 200 and 201 can be emitted and reflected by the light-emitting device 100. Furthermore, direction 210 can correspond to the main emission direction of the light-emitting device 100. Direction 210 is also shown in the side view of the following figures.

[0079] Figure 3 and Figure 4 The retroreflector of the light-emitting device 100 shown is a separately manufactured component that can be applied and fastened to the carrier substrate 141 by bonding or welding during the manufacture of the light-emitting device 100. Furthermore, as indicated by the triangle, the retroreflector 121 is constructed in the form of a corner reflector 130. The corner reflector 130, also called a angular reflector, has three reflective surfaces oriented perpendicularly to each other. The corner reflector 130 can be a three-sided mirror or a prism. When designed as a three-sided mirror, the corner reflector 130 can have a surface facing one side (in... Figure 3 A hollow, pyramidal body with three inner sides (pointing upwards from the center), which can be used as a reflective surface. The inner sides can be metallic or specularly reflective. When designed as a prism, the corner reflector 130 can have a transparent pyramidal body with four outer sides. Here, except for one side (… Figure 3 Besides the side pointing upwards, the three outer surfaces can be used as reflective surfaces. The outer surfaces involved can be constructed with a metallic or specular reflective material (not shown respectively).

[0080] As in Figure 4 As shown, in Figure 3 and Figure 4 In the light-emitting device 100, viewed from a top view of the light-emitting device 100 or its front side, there is an alternating lateral arrangement of semiconductor light sources 111 and retroreflectors 121, such that the retroreflectors 121 exist in the region next to and between the semiconductor light sources 111. Furthermore, the semiconductor light sources 111 of the light source arrangement 110 and the retroreflectors 121 of the reflector arrangement 120 are arranged in a regular grid.

[0081] exist Figure 4 The lateral dimension 190 of the semiconductor light source 111 and the spacing 191 between the semiconductor light source are also indicated by dashed lines and double arrows. The lateral dimension 190 can be less than 1 millimeter and is in the micrometer range. For example, a dimension 190 in the range of one hundred micrometers or less is feasible. In this context, the semiconductor light source 111 can be, for example, a micro-LED. The spacing 191 can be in the single-digit millimeter range or less. A spacing 191 less than two millimeters, for example, in the range of half a millimeter, is conceivable. For the retroreflector 121, the same or similar descriptions can be applied regarding the lateral dimension and spacing.

[0082] Figure 5 and Figure 6 Side and top views of another light-emitting device 100 are shown. The light-emitting device 100 has a carrier substrate 141 with printed conductors 145, on which a semiconductor light source 111 and a retroreflector 121 are disposed on one side. The retroreflector 121 is a separately manufactured component applied to the carrier substrate 141 during manufacturing, located in the region adjacent to and between the semiconductor light source 111, and can be secured to the carrier substrate 141 (not shown) by means of adhesive or solder. Figure 3 and Figure 4 The light-emitting devices are 100 different. Figure 5 and Figure 6 The retroreflector 121 of the light-emitting device 100 is configured as a lens reflector 131, as indicated by the circle. The lens reflector 131 may have a transparent spherical portion. Such a spherical portion may be configured as a curved portion facing the carrier substrate 141 as a reflective surface, and may be metallic or specularly reflective (not shown).

[0083] It is feasible to propose an irregular or differently sized arrangement for the retroreflector 121, instead of a regular grid arrangement. This allows for the creation of regions with varying reflection intensities within the luminescent region 180. Figure 6 China regarding Figure 5 and Figure 6 The light-emitting device 100 is illustrated with this design for illustrative purposes. Here, in the region between the four semiconductor light sources 111 shown, there is a greater number of retroreflectors 121 compared to the region outside them, and these retroreflectors are correspondingly arranged at smaller intervals. This design can also be applied to the light-emitting device 100 shown in other figures (e.g., Figure 3 and Figure 4 (Light-emitting devices) are used. In a corresponding manner, Figure 5 and Figure 6 The light-emitting device 100 can be implemented as having a retroreflector 121 arranged in a regular grid.

[0084] Figure 7 and Figure 8Side and top views of a further multilayered light-emitting device 100 are shown. The light-emitting device 100 has a carrier substrate 141 with printed conductors 145, on which a semiconductor light source 111 is disposed on one side. The light-emitting device 100 also has an additional substrate 142 placed on the carrier substrate 141, on which a retroreflector 121 is disposed on one side. The retroreflector 121 is a separately manufactured component applied to the substrate 142, currently configured as a corner reflector 130, and can be secured to the substrate 142 by means of adhesive or solder (not shown).

[0085] The additional substrate 142 is made of a transparent, flexible substrate material, such as plastic. The substrate 142 can be a transparent plastic film. The substrate 142 is disposed on the carrier substrate 141 on the side opposite to the side where the retroreflector 121 is mounted. Here, the substrate 142 is mounted on the side of the carrier substrate 141 where the semiconductor light source 111 is also located, such that the semiconductor light source 111 is covered by the additional substrate 142. Here, viewed in a top view of the light-emitting device 100, the retroreflector 121 is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. The semiconductor light source 111 and the retroreflector 121 are substantially disposed in a common plane.

[0086] exist Figure 7 and Figure 8 In the light-emitting device, substrate 142 is connected to carrier substrate 141 in the region adjacent to and between semiconductor light source 111. During manufacturing, substrate 142, which has retroreflector 121, can be bonded to carrier substrate 141, which has semiconductor light source 111. Lamination is also possible, allowing the two substrates 141 and 142 to be partially fused together at the location adjacent to and between semiconductor light source 111 (not shown). The transparent design of substrate 142 enables its transmission, allowing light radiation 200 generated by semiconductor light source 111 to be emitted unobstructed by light-emitting device 100.

[0087] Figure 9 and Figure 10 The diagram shows a side view and a top view of an additional light-emitting device 100, which is related to... Figure 7 and Figure 8 The light-emitting device 100 is constructed similarly. Figure 9 and Figure 10The light-emitting device 100 includes a carrier substrate 141 with printed conductors 145 and another substrate 142. A semiconductor light source 111 is disposed on one side of the carrier substrate, and a retroreflector 121 is disposed on one side of the other substrate. The retroreflector 121 is a separately manufactured component applied to the substrate 142, which is currently configured as a lens reflector 131 and is fastened to the substrate 142 (not shown) for example by means of an adhesive or solder.

[0088] exist Figure 9 and Figure 10 In the light-emitting device, the carrier substrate 141 is made of a transparent, flexible substrate material, such as plastic, and is implemented, for example, in the form of a flexible plastic film. The other substrate 142 can be made transparent or opaque, and is also made of plastic. The carrier substrate 141 is disposed on the other substrate 142 on the side opposite to the side where the semiconductor light source 111 is mounted. Here, the carrier substrate 141 is mounted on the side of the substrate 142 where the retroreflector 121 is also located, such that the retroreflector 121 is covered by the carrier substrate 141. Here, viewed in a top view of the light-emitting device 100, the retroreflector 121 is located in the region next to and between the semiconductor light source 111 and the semiconductor light source 111. The semiconductor light source 111 and the retroreflector 121 are substantially disposed in a common plane.

[0089] Regarding the fastening of the carrier substrate 141, the carrier substrate 141 is connected to another substrate 142 in the region adjacent to and between the retroreflector 121. During manufacturing, the carrier substrate 141, which is provided with the semiconductor light source 111, can be bonded to the substrate 142, which is provided with the retroreflector 121. Lamination is also feasible, such that the two substrates 141, 142 are partially fused together at the locations adjacent to and between the retroreflector 121 (not shown). The transparent design of the carrier substrate 141 allows for its transmission, thereby enabling unobstructed reverse reflection of external light radiation 201 at the retroreflector 121.

[0090] exist Figure 7 and Figure 8 The feasibility of implementing the light-emitting device 100 as a retroreflector 121 in the form of a lens reflector 131. Correspondingly, for Figure 9 and Figure 10 The light-emitting device 100 may be designed with a retroreflector 121 in the form of an angular reflector 130 (not shown).

[0091] In manufacturing according to Figures 3 to 10When describing the light-emitting device 100, the semiconductor light source 111 can be disposed on the carrier substrate 141 by processes such as pick-and-place, LIFT (laser-induced forward transfer), stamping, and electrostatic assisted stamping. The retroreflector 121, implemented as a separate component, can be mounted on the carrier substrate 141 or another substrate 142 using the same processes described above. Alternatively, the retroreflector 121 can be implemented by a surface-structured portion, which can exist on the carrier substrate 141 or another substrate 142, as described below.

[0092] Figure 11 and Figure 12 Side and top views of another light-emitting device 100 are shown. The light-emitting device 100 has a carrier substrate 141 on which a semiconductor light source 111 is disposed on one side, and the semiconductor light source is electrically connected to printed conductors 145 of the carrier substrate 141. The light-emitting device 100 also has a retroreflector 121 on the side of the carrier substrate 141, which, in a top view of the light-emitting device 100 or its front side, exists in the region next to and between the semiconductor light source 111 and the semiconductor light source 111. The retroreflector 121 is implemented by means of a metallized recess 150 in the carrier substrate 141. Correspondingly, the carrier substrate 141 is formed with a recess 150, in which metallization portions 147 are applied to the carrier substrate 141. The recess 150 exists in the form of a recess. The retroreflector 121 and the semiconductor light source 111, in the form of a metallized recess 150, are disposed in planes offset from each other.

[0093] According to the above design, apart from the metallized portion 147 and printed conductor 145 in the area of ​​the empty portion 150, the carrier substrate 141 can be made of a transparent or opaque plastic material. During manufacturing, the empty portion 150 can be formed in the carrier substrate 141 by processes such as embossing or milling, and subsequently metallized by a coating process. It is also feasible to provide the carrier substrate 141 together with the empty portion 150 by performing a molding process. Currently, the empty portion 150 is pyramidally formed with three mutually perpendicularly oriented inner sides, such that the retroreflector 121 exists in the form of a corner reflector, as indicated by the triangle.

[0094] Figure 13 and Figure 14 The diagram shows a side view and a top view of an additional light-emitting device 100, which is related to... Figure 11 and Figure 12 The light-emitting device 100 is constructed similarly. Figure 13 and 14The light-emitting device 100 includes a carrier substrate 141 on which a semiconductor light source 111 is mounted. The carrier substrate has a retroreflector 121 in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. The retroreflector 121 is realized by means of a metallized, i.e., a recessed portion 151 provided with a metallized portion 147 in the carrier substrate 141. The recessed portion 151 exists in the form of a concave portion. Unlike the pyramidal recessed portion 150, the recessed portion 151 is partially spherical or hemispherical, such that the metallized recessed portion 151 forms a retroreflector 121 in the form of a concave mirror, as according to... Figure 13 and Figure 14 As indicated by the (partial) circle in the diagram. Manufacturing can be carried out as described above, and includes, for example, creating the void 151 and subsequent metal cladding on the carrier substrate 141 by processes such as embossing or milling.

[0095] Figure 15 and Figure 16 The side and top views of the light-emitting device 100 are shown, illustrating a further variation of the retroreflector 121 in the form of a metallized recess 150 on the carrier substrate 141. Here, in the top view of the light-emitting device 100, the retroreflector 121 is also present in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Due to the pyramidal recess 150, the retroreflector 121 exists as a corner reflector. Figure 15 and Figure 16 In the light-emitting device 100, the metallization portion 147 is present not only in the region of the empty portion 150 to provide the retroreflector 121, but also in other locations, such that the printed conductors 145 of the carrier substrate 141 are simultaneously formed through the metallization portion 147. Depending on the reflectivity of the metallization portion 147, it is possible to form an additional metal coating in the region of the empty portion 150, and thus the region of the retroreflector 121, to achieve sufficiently strong reflectivity (not shown) at said locations. Figure 15 and Figure 16 The design shown can be implemented in a corresponding manner as a retroreflector 121 in the form of a concave mirror with a partially spherical or hemispherical recess 151 (not shown).

[0096] Figure 17 A side view of another multilayer light-emitting device 100 is shown. The light-emitting device 100 has a carrier substrate 141 with printed conductors 145, on which a semiconductor light source 111 is disposed on one side. The light-emitting device 100 also has another substrate 142, which has a retroreflector 121 in the form of a metallized void 150 formed on one side. Figure 17Only one of the voids is shown in the diagram. Manufacturing can be performed as described above and includes, for example, creating the void 150 and subsequent metal cladding on the substrate 142 by processes such as embossing or milling. The use of a pyramidal void 150 allows the retroreflector 121 to function as a corner reflector.

[0097] The carrier substrate 141 is made of a transparent substrate material, such as plastic. The other substrate 142 is made of a transparent or opaque substrate material, which can also be plastic. These two substrates 141 and 142 are stacked vertically, such that the side of substrate 142 having the retroreflector 121 faces the side of carrier substrate 141 opposite to the side where the semiconductor light source 111 is mounted. The two substrates 141 and 142 are arranged such that, viewed in a top view of the light-emitting device 100, the retroreflector 121 is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Here, for example, there is a... Figure 12 The appearance shown is that the transparent design of the carrier substrate 141 allows for its transmission, thereby enabling the retroreflection (not shown) of external light radiation 201 at the retroreflector 121.

[0098] exist Figure 17 In the light-emitting device 100, the semiconductor light source 111 and the retroreflector 121, which are located on different substrates 141 and 142, are in planes that are staggered from each other. The carrier substrate 141 can be mounted on another substrate 142, so that it is compatible with the light source 111 and the retroreflector 121. Figure 17 Unlike the schematic diagram, the two substrates 141 and 142 can be adjacent to each other. During manufacturing, the carrier substrate 141, which assembles the semiconductor light source 111, can be bonded to the substrate 142, which forms the retroreflector 121. Lamination is also possible, allowing the two substrates 141 and 142 to be partially fused together at locations next to and between the retroreflector 121 (not shown).

[0099] Figure 17 A possible variation of the light-emitting device 100 involves providing an inverted, stacked arrangement of substrates 141 and 142. For illustrative purposes, Figure 18A side view of another light-emitting device 100 implemented in the aforementioned sense is shown. Here, substrates 141 and 142 are stacked one on top of the other, such that the side of the carrier substrate 141 with the semiconductor light source 111 mounted faces the side of the substrate 142 opposite to the side with the retroreflector 121 in the form of a metallized recess 150. In this design, the substrate 142 is made of a transparent substrate material, such as a plastic material. This allows for its transmission, so that the light radiation 200 generated by the semiconductor light source 111 can pass through the substrate 142 and be emitted by the light-emitting device 100 (not shown). The carrier substrate 141 can be made of a transparent or opaque substrate material, which can also be a plastic material. The substrate 142 can be fastened to the carrier substrate 141 in a suitable manner, for example by means of an adhesive (not shown).

[0100] exist Figure 18 In the light-emitting device 100 shown in the figure, corresponding to the design scheme in other figures, the semiconductor light source 111 is not blocked by the retroreflector 121. This feature is present when viewed in the radiating direction or the main radiating direction (corresponding to direction 210). Figure 18 In the light-emitting device, this is achieved as follows: Viewed in a top view of the light-emitting device 100, the retroreflector 121 is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Here, for example, there exists a corresponding... Figure 12 Its appearance.

[0101] exist Figure 17 and Figure 18 The light-emitting device 100 shown can be implemented in a corresponding manner as a retroreflector 121 in the form of a concave mirror, with a partially spherical or hemispherical recess 151.

[0102] Figure 19 A side view of a light-emitting device 100 is shown, which has another variation for providing a surface-structured portion for a retroreflector 121. The light-emitting device 100 has a carrier substrate 141 on which a semiconductor light source 111 is disposed on one side, and the semiconductor light source is electrically connected to printed conductors 145 on the carrier substrate 141. A retroreflector 121 is also formed on the carrier substrate 141, and in a top view of the light-emitting device 100, the retroreflector exists in the region adjacent to and between the semiconductor light source 111. Figure 19 Only one of the retroreflectors 121 is shown in the top view. In the top view, there may be corresponding... Figure 12 The appearance. This can also be applied to the light-emitting device 100 in the following figures.

[0103] exist Figure 19In the light-emitting device 100, the retroreflector 121 and the semiconductor light source 111 are also located in planes offset from each other. The retroreflector 121 is realized by means of a void 150 in the carrier substrate 141 and a transparent layer 170 applied to the carrier substrate 141 and filling the void 150. The void 150 and the transparent layer 170 are located on or on the side of the carrier substrate 141, on which the semiconductor light source 111 is also disposed. The transparent layer 170 is adjacent not only to the carrier substrate 141 but also to the semiconductor light source 111, and as shown in Figure 19 As shown, it can be flush with the front side of the semiconductor light source 111.

[0104] The transparent layer 170 can be made of a plastic material. Compared to the carrier substrate 141 or its substrate material, the transparent layer 170 or the layer material of layer 170 has a higher refractive index. The substrate material of the carrier substrate 141 can be transparent or opaque, and can also be a plastic material. Due to the difference in refractive index, external light radiation 201 can be reflected (total internal reflection) at the carrier substrate 141 in the region of the void 150, thus causing retroreflection, as in... Figure 19 As indicated by the possible optical path of the light radiation 201, the void 150 can function as a retroreflector 121 as proposed. Here, the external light radiation 201 can be coupled into the layer 170 via the side of the layer 170 away from the carrier substrate 141, reach the carrier substrate 141 and the void 150, and after the retroreflection that occurs here, be coupled out of the layer again via the aforementioned side of the layer 170.

[0105] In manufacturing Figure 19 When the light-emitting device 100 is used, the void 150 can be created in the carrier substrate 141 by processes such as embossing or milling. It is also feasible to provide the carrier substrate 141 together with the void 150 by performing a molding process. The transparent layer 170 can be applied to the carrier substrate 141 by processes such as dispensing, printing, or performing a molding process. Currently, a pyramidal void 150 with three mutually perpendicularly oriented inner sides is used, such that the retroreflector 121 exists in the form of a corner reflector.

[0106] Figure 20 A side view of a light-emitting device 100 is shown, which has another manifestation for providing a surface-structured portion for a retroreflector 121, the light-emitting device being... Figure 19 The light-emitting device 100 is constructed similarly. Figure 20The light-emitting device 100 has a carrier substrate 141 on which a semiconductor light source 111 is disposed on one side. A retroreflector 121 is also formed on the carrier substrate 141, and in a top view of the light-emitting device 100, the retroreflector is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Figure 20 Only one of the retroreflectors 121 is shown in the diagram. The retroreflector 121 is implemented by means of a layer arrangement consisting of two layers 170, 171 and a gap 150 in layer 171. The layer arrangement is formed on the side of the carrier substrate 141 on which the semiconductor light source 111 is also disposed.

[0107] Hereinafter, layers 170 and 171 will be referred to as first layer 171 and second layer 170. At least second layer 170 is transparent. First layer 171 may be transparent or opaque. First layer 171 is adjacent to carrier substrate 141 and semiconductor light source 111, and may be as follows: Figure 20 As shown, it is flush with the front side of the semiconductor light source 111. The second layer 170 is at least adjacent to the first layer 171, and according to... Figure 20 The design scheme is also adjacent to the semiconductor light source 111 or its front side. The second layer 170 applied on the first layer 171 fills the empty portion 150 of the first layer 171. During the self-emissive operation of the light-emitting device 100, the light radiation 200 generated by the semiconductor light source 111 can pass through the second layer 170 and be emitted by the light-emitting device 100 (not shown).

[0108] The two layers 170 and 171 can be made of plastic material. Compared to the first layer 171 (or the corresponding layer material of layer 171), the second layer 170 (or the corresponding layer material of layer 170) has a higher refractive index. Due to the difference in refractive index, external light radiation 201 can be reflected (total internal reflection) at the first layer 171 in the region of the void 150, thus causing retroreflection, as in... Figure 20 As indicated by the possible optical path of the light radiation 201, the empty portion 150 can function as a retroreflector 121 as proposed. Here, the external light radiation 201 can be coupled into the second layer 170 via the side of the second layer 170 opposite to the first layer 171, reach the first layer 171 and the empty portion 150, and after retroreflection at this point, be coupled out from the second layer again via the aforementioned side of the second layer 170.

[0109] In manufacturing Figure 20When the light-emitting device 100 is used, layers 170 and 171 can be produced on the carrier substrate 141 by processes such as dispensing, printing, or performing molding processes. If the void 150 is not formed in one of the aforementioned processes, then, for example, embossing or milling can be additionally considered to provide the void 150 in layer 171. The current application uses a pyramidal void 150 with three inner sides oriented perpendicularly to each other, such that the retroreflector 121 exists in the form of a corner reflector.

[0110] Figure 21 A side view of a light-emitting device 100 is shown, which has another variation for providing a surface-structured portion for a retroreflector 121. The light-emitting device 100 includes a carrier substrate 141 on which a semiconductor light source 111 is disposed on one side, and the semiconductor light source is electrically connected to printed conductors 145 of the carrier substrate. The carrier substrate 141 forms the retroreflector 121, which, when viewed in a top view of the light-emitting device 100, is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Figure 21 Only one retroreflector 121 is shown. The retroreflector 121 and the semiconductor light source 111 are located in planes offset from each other. The carrier substrate 141 is made of a transparent substrate material, such as plastic, allowing transmission through it. The retroreflector 121 is implemented by means of a protruding structural element of the carrier substrate 141, namely a protrusion 160. The protrusion 160 is located on the side of the carrier substrate 141 opposite to the side of the carrier substrate 141 where the semiconductor light source 111 is mounted. The side carrying the semiconductor light source 111 and the side having the protrusion 160 can also be referred to as the front and rear sides of the carrier substrate 141. Correspondingly, the protrusion 160 can be referred to as the rear protrusion 160.

[0111] exist Figure 21 In the light-emitting device 100, due to the difference in refractive index, external light radiation 201 can be reflected (total internal reflection) at the carrier substrate 141 in the region of the raised portion 160, thus causing retroreflection, as in... Figure 21As indicated by the possible optical path of the light radiation 201, the protrusion 160 can be used as a retroreflector 121 as proposed. Here, the external light radiation 201 can be coupled into the carrier substrate 141 via the front side, reach the rear side of the carrier substrate 141 and the protrusion 160, and after retroreflection here, be coupled out again from the carrier substrate 141 via the front side. There may be a difference in refractive index between the carrier substrate 141 and the medium present in the region of the rear side of the carrier substrate 141 and the protrusion 160. Depending on the application of the light-emitting device 100 or other design, the medium can be air or other materials not shown. Currently, the protrusion 160 is pyramidally configured with three sides or outer sides that are perpendicular to each other, so that the retroreflector 121 exists in the form of a corner reflector. In manufacturing Figure 21 In the process of making the light-emitting device 100, for example, a carrier substrate 141 with raised portions 160 can be provided by imprinting or performing a molding process.

[0112] Figure 22 A side view of another light-emitting device 100 is shown, which has a carrier substrate 141 and a semiconductor light source 111 disposed on one side of the carrier substrate 141. The light-emitting device 100 has a retroreflector 121, which, when viewed in a top view of the light-emitting device 100, is located in the region adjacent to and between the semiconductor light source 111 and the semiconductor light source 111. Figure 22 Only one retroreflector 121 is shown. The carrier substrate 141 is made of a transparent substrate material, such as plastic. The retroreflector 121 is a separately manufactured component that can be applied to the carrier substrate 141 and fastened thereon during the manufacture of the light-emitting device 100. The retroreflector 121 is applied to the side of the carrier substrate 141 opposite to the side carrying the semiconductor light source 111. In this manner, the retroreflector 121 and the semiconductor light source 111 are in planes offset from each other. The aforementioned side of the carrier substrate 141 can also be referred to as the front side and the rear side, and correspondingly, the retroreflector 121 can also be referred to as the rear-side retroreflector 121. The transparent design of the carrier substrate 141 allows for its transmission, thereby enabling the retroreflection (not shown) of external light radiation 201 at the retroreflector 121. Currently, the retroreflector 121 is constructed in the form of a corner reflector 130, such as a prism, as indicated by the triangle.

[0113] Figure 23 A side view of a light-emitting device 100 is shown, illustrating another variation of the light-emitting device having a surface-structured portion, the light-emitting device being... Figure 21 The light-emitting device 100 is constructed similarly. Figure 23The light-emitting device 100 has a carrier substrate 141, which has a semiconductor light source 111 disposed on one side of the carrier substrate 141 and electrically connected to printed conductors 145 on the carrier substrate 141. The carrier substrate 141 is made of a transparent substrate material, such as plastic, so that the carrier substrate 141 can be transmitted. The carrier substrate 141 is configured with a retroreflector 121, which is realized by means of a protrusion 160 on the carrier substrate 141. The protrusion 160 exists on the side of the carrier substrate 141 opposite to the side of the carrier substrate 141 where the semiconductor light source 111 is located. Thus, the retroreflector 121 and the semiconductor light source 111 are in a plane that is offset from each other. The side carrying the semiconductor light source 111 and the side having the protrusion 160 can also be referred to as the front side and the rear side, and correspondingly, the protrusion 160 and the retroreflector 121 can be referred to as the rear protrusion 160 and the rear retroreflector 121.

[0114] and Figure 21 The light-emitting devices are 100 different. Figure 23 The light-emitting device 100 is configured such that, when viewed in a top view, the semiconductor light source 111 is located in the region of the raised portion 160, which is in the center of the retroreflector 121. In this design, the retroreflection performance is as unobstructed as possible by the semiconductor light source 111, which is centrally located relative to the retroreflector 121, having a smaller structural form relative to the retroreflector 121; or in other words, the raised portion 160 forming the retroreflector 121 is (significantly) larger in size than the semiconductor light source 111.

[0115] exist Figure 23 In the light-emitting device 100, corresponding to Figure 21 The light-emitting device 100 allows external light radiation 201 to be coupled into the carrier substrate 141 via a front coupling, reaching the rear protrusion 160, where it undergoes retroreflection and is then coupled out again from the carrier substrate 141 via the front (not shown). Light reflection, and thus retroreflection, is based on the difference in refractive index between the carrier substrate 141 and the medium (e.g., air) present in the region of the protrusion 160. Currently, the protrusion 160 is pyramidally formed with three sides oriented perpendicularly to each other, such that the retroreflector 121 exists in the form of a corner reflector. Figure 23 The manufacture of the light-emitting device 100 may include providing a carrier substrate 141 having a rear-side protrusion 160 by imprinting or performing a molding process.

[0116] Figure 24 A side view of another light-emitting device 100 is shown, which is related to... Figure 23 The light-emitting device 100 has a similar structure and is similar to... Figure 23The light-emitting devices are constructed in different multi-layered structures. Figure 23 The light-emitting device 100 has a carrier substrate 141 and another substrate 142, the carrier substrate having a semiconductor light source 111 disposed on one side of the carrier substrate 141 and electrically connected to printed wires 145 on the carrier substrate 141. Substrates 141 and 142 are respectively made of a transparent substrate material, such as a plastic material. The same or different substrate materials may be involved. Figure 23 Similarly, the substrate 142 has a raised portion 160 on one side, through which the retroreflector 121 of the light-emitting device 100 is realized. This involves a pyramidal raised portion 160 having three sides perpendicularly oriented to each other, such that the retroreflector 121 exists in the form of a corner reflector. During manufacturing, the substrate 142 with the raised portion 160 can be provided by imprinting or performing a molding process.

[0117] exist Figure 24 In the light-emitting device 100, the two substrates 141 and 142 are arranged such that the side of the substrate 141 carrying the semiconductor light source 111 points in the opposite direction to the side of the substrate 142 with the protrusion 160. The semiconductor light source 111 and the retroreflector 121 are located on opposite sides of the arrangement formed by the two substrates 141 and 142, thus situated in a plane that is offset from each other. These sides can also be referred to as the front side and the rear side, and correspondingly, the retroreflector 121 can also be referred to as the rear-side retroreflector 121. The substrates 141 and 142 are further arranged such that, when viewed in a top view of the light-emitting device 100, the semiconductor light source 111 is positioned relative to the protrusion 160, and thus the retroreflector 121 is centered. Here, the protrusion 160 is also configured to be (significantly) larger than the semiconductor light source 111 in order to provide the most unobstructed retroreflection performance possible. The carrier substrate 141 and the other substrate 142 can be connected to each other, for example, by bonding or lamination.

[0118] The transparent design of substrates 141 and 142 allows for transmission, thereby enabling retroreflection of external light radiation 201 at the protrusion 160, which can thus function as a retroreflector 121 as proposed. Here, in conjunction with... Figure 21 and Figure 23Similar to the light-emitting device 100, light radiation 201 can be coupled into the substrate 142 after passing through the carrier substrate 141, reach the protrusion 160, be retroreflected here, and then emitted toward the carrier substrate 141, and coupled out from the substrate 142, and emitted by the light-emitting device 100 (not shown) after passing through the carrier substrate 141 again. Regarding light reflection and retroreflection, the difference in refractive index is also utilized here, currently the difference in refractive index between the substrate 142 and the medium (e.g., air) present in the region of the protrusion 160.

[0119] Figure 25 A side view of another light-emitting device 100 is shown, which is related to... Figure 20 The light-emitting device 100 has a similar structure. Figure 25 The light-emitting device 100 has a carrier substrate 141 on which a semiconductor light source 111 is disposed on one side, and a retroreflector 121 is also formed on the carrier substrate. The retroreflector 121 is implemented by means of a layer arrangement including a first layer 171 and a second layer 170, and a void 150 in the first layer 171. The layer arrangement is formed on the side of the carrier substrate 141 on which the semiconductor light source 111 is also disposed. At least the second layer 170 is transparent. The first layer 171 may be transparent or opaque. Both layers 170 and 171 may be made of plastic material. The second layer 170 applied to the first layer 171 fills the void 150 in the first layer 171.

[0120] and Figure 20 The light-emitting devices are 100 different. Figure 25 The semiconductor light source 111 in the light-emitting device 100 is located within the empty portion 150 of the first layer 171, and in the region of the empty portion 150, and thus the central part of the retroreflector 121. The semiconductor light source 111 is embedded in the transparent second layer 170. During the self-emissive operation of the light-emitting device 100, the light radiation 200 generated by the semiconductor light source 111 can pass through the second layer 170 and be emitted by the light-emitting device 100 (not shown). The empty portion 150 of the first layer 171 currently has a truncated pyramidal shape with three mutually perpendicularly oriented inner sides, such that the retroreflector 121 has a retroreflective performance corresponding to a corner reflector. In this design, the retroreflective performance can be made as unobstructed as possible by making the empty portion 150, and thus the retroreflector 121, a size that is (significantly) larger than that of the semiconductor light source 111. By placing the semiconductor light source 111 within the empty portion 150 of the first layer 171, the semiconductor light source 111 is not blocked by the retroreflector 121 when viewed in the radiating direction or the main radiating direction (corresponding to direction 210) of the light-emitting device 100 in other figures.

[0121] exist Figure 25 In the light-emitting device 100, retroreflection is based on the difference in refractive index. For this purpose, the second layer 170 (or the corresponding layer material of layer 170) has a larger refractive index than the first layer 171 (or the corresponding layer material of layer 171). Therefore, retroreflection can be induced in the region of the void 150 by the reflection (total internal reflection) of external light radiation 201 at the first layer 171, as in... Figure 20 As indicated by the possible optical path of light radiation 201, the empty portion 150 can function as a retroreflector 121 as proposed. The layers 170 and 171 can be manufactured as described above. Figure 20 Proceed as described.

[0122] Based on retroreflection caused by surface structuring and utilizing differences in refractive index Figures 19 to 25 The light-emitting device 100 can be implemented not only by means of an angle reflector or a retroreflector 121 having the effect of an angle reflector, but also by means of a retroreflector 121 with a curved reflective surface.

[0123] For illustration purposes, Figure 26 A side view of another light-emitting device 100 is shown, the light-emitting device being... Figure 19 A variant of the light-emitting device 100. Figure 26 The carrier substrate 141 of the light-emitting device 100 replaces the pyramidal void 150 with a partially spherical or hemispherical void 151, so that a retroreflector 121 with a curved reflective surface is realized through the void 151 together with the transparent layer 170 filling the void 151. Figure 26 Only one of the retroreflectors 121 is shown in the image.

[0124] for Figure 20 The light-emitting device 100 can be modified in such a way that, for the first layer 171, the empty portion 150 is replaced by a partially spherical or hemispherical empty portion 151. The corresponding content applies to... Figure 25 The light-emitting device 100 may have a spherical section (not shown) in the form of a gap in the first layer 171.

[0125] Figure 27 For illustrative purposes, a side view of another light-emitting device 100 is shown, which is... Figure 21 A variant of the light-emitting device 100. Figure 27The carrier substrate 141 of the light-emitting device 100 has a partially spherical or hemispherical protrusion 161 on the rear side, replacing the pyramidal protrusion 160. This protrusion, due to the refractive index difference between the carrier substrate 141 and the medium present in the region of the protrusion 160, can act as a retroreflector 121 with a curved reflective surface. Figure 27 Only one of the retroreflectors 121 is shown in the image.

[0126] for Figure 23 and Figure 24 The light-emitting device 100 can be modified in such a way that a partially spherical or hemispherical protrusion 161 (not shown) is formed on the rear side of the carrier substrate 141 or another substrate 142.

[0127] Figure 28 For illustrative purposes, a side view of another light-emitting device 100 is shown, which is... Figure 22 A variation of the light-emitting device 100. Figure 28 In the light-emitting device 100, instead of a corner reflector 130, a retroreflector 121 in the form of a partially spherical or hemispherical reflector 132 is provided. This retroreflector 121 is applied as a separately manufactured component to the rear side of the carrier substrate 141 and can be secured thereby by adhesive bonding. The partially spherical or hemispherical reflector 132 may have a transparent body, the curved outer side of which may be metallic or specularly reflective (not shown). Figure 28 Only one of the reflectors, 132, is shown in the image.

[0128] The light-emitting device 100 constructed according to the scheme described above can have a uniform self-emissive region, which can also have uniform retroreflective characteristics without negatively affecting the self-emissive characteristics. In the same way, the light-emitting device 100 can have a retroreflective region, which is extended or supplemented by the self-emissive characteristics.

[0129] Therefore, the light-emitting device 100 can be used, for example, in a taillight with integrated retroreflective properties or in a retroreflective road sign with integrated self-illuminating operation, or applied in the form of said taillight or retroreflective road sign. Furthermore, the light-emitting device 100 can be used, for example, to realize self-illuminating reflectors, traffic lights, billboards, etc. For such applications, the light-emitting device 100 can, for example, be embedded in a transparent material or composite glass (not shown). The light-emitting device 100 can also have a flat or planar shape, such as, for example, in... Figure 1 and Figure 2 As shown in the illustration. Alternatively, the light-emitting device 100 may have a curved shape or be positioned in a curved shape, as illustrated in the illustration for illustrative purposes. Figure 29As shown in the diagram. The curved shape can, for example, correspond to the contour of the taillight. The curved shape can be achieved through a flexible design of the carrier structure 140 of the light-emitting device 100. The carrier structure 140 can also be made transparent. Furthermore, the light-emitting device 100 or its integrated light-emitting area 180 (see...) Figure 1 and Figure 2 The luminous area 180 can be constructed in different geometric shapes. For example, a rectangular or circular luminous area 180 is feasible. Another example is a luminous area 180 in the form of a traffic symbol or sign (not shown).

[0130] Furthermore, the light-emitting device 100 can be proposed to achieve light emission and reflection not only on one side or the main side, but also on both sides. For illustrative purposes, Figure 30 A side view of another light-emitting device 100 is shown. In this light-emitting device, light emission and retroreflection can be induced from the main side or about the main side of the light-emitting device 100 by means of a light source arrangement 110 composed of semiconductor light sources 111 forming an integrated light-emitting region 180 and a reflector arrangement 120 composed of retroreflectors 121 forming an integrated light-emitting region 180. This is in Figure 30 The diagram corresponds to the previous figure and is illustrated according to a vertically upward direction 210. Direction 210 indicates the first half-space into which light can be emitted and reflected.

[0131] As in Figure 30 As shown by the dashed line, the light-emitting device 100 also has an additional light source arrangement 119 composed of a semiconductor light source 111 and / or an additional reflector arrangement 129 composed of a retroreflector 121, by means of which light emission and / or retroreflection can be induced with respect to the opposite main side of the light-emitting device 100. This is in Figure 30 The diagram is illustrated using a vertically downward direction 219. Direction 219 indicates the second half-space into which light can be radiated and / or reflected. If the light-emitting device 100 has not only an additional light source arrangement 119 but also an additional reflector arrangement 129, the additional light source arrangement and the additional reflector arrangement can together form another combined light-emitting area of ​​the light-emitting device 100.

[0132] This two-sided structural form can be implemented in different ways. Figure 30 The image exemplarily illustrates a design of a carrier structure 140 of a light-emitting device 100 in the form of a single substrate, on which semiconductor light sources 111 and / or retroreflectors 121 may be disposed or present on both sides. Furthermore, in Figure 30 The text shows the corresponding... Figure 5The retroreflector 121 is a separately generated and applied component of the design scheme (having a carrier substrate 141 and a lens reflector 131). Alternatively, the two-sided structure can be achieved in other ways and methods, for example by correspondingly applying the schemes and designs shown in other figures, or it can be used, for example, by using two light-emitting devices in the light-emitting device 100 shown in other figures oriented opposite to each other as a combined light-emitting device 100 (not shown).

[0133] In addition to the embodiments described above and illustrated in the accompanying drawings, other embodiments are conceivable, which may include other variations and / or combinations of features.

[0134] In this sense, the above description of materials can be considered an example, and other materials can be applied. The same applies to the above description of figures.

[0135] For in Figure 21 , Figure 23 , Figure 24 and Figure 27 A possible variation of the light-emitting device 100 shown is that a metallized portion is provided in the region of the raised portions 160, 161. In this manner, the retroreflection induced in the region of the raised portions 160, 161 can be based on specular reflection.

[0136] Regarding Figure 21 The light-emitting device 100 shown can be considered to correspond to Figure 24 Another variant of the design is that the light-emitting device is implemented in multiple layers using a carrier substrate 141 and another substrate 142, wherein the protrusion 160 is disposed on the other substrate 142.

[0137] Another design option is to... Figure 6 Correspondingly, for the semiconductor light source 111, instead of a regular grid arrangement, an irregular arrangement or an arrangement with different densities is also proposed. Thus, partial areas with different brightness or light intensity can be achieved within the light-emitting region 180.

[0138] Although the details of the invention have been described and illustrated with reference to preferred embodiments, the invention is not limited to the disclosed examples and other variations can be derived by those skilled in the art without departing from the scope of protection of the invention.

[0139] List of reference numerals

[0140] 100 Light-emitting devices

[0141] 110 Light Source Arrangement

[0142] 111 Semiconductor Light Source

[0143] 119 Other Light Source Arrangements

[0144] 120 reflector arrangement

[0145] 121 Retroreflector

[0146] 129 Other reflector arrangements

[0147] 130-degree angle reflector

[0148] 131 lens reflector

[0149] 132 hemispherical reflector

[0150] 140 carrier structure

[0151] 141 support substrate

[0152] 142 Other substrates

[0153] 145 Printed Conductor

[0154] 147 Metallization Section

[0155] 150 empty section

[0156] 151 Empty Section

[0157] 160 ridge

[0158] 161 raised section

[0159] 170th floor

[0160] 171st floor

[0161] 180 luminous area

[0162] 190 horizontal dimension

[0163] 191 spacing

[0164] 200 light radiation

[0165] 201 light radiation

[0166] 210 direction

[0167] 219 direction

Claims

1. A light-emitting device (100), the light-emitting device comprising: A light source arrangement (110) consisting of horizontally arranged semiconductor light sources (111); and A reflector arrangement (120) consisting of horizontally arranged retroreflectors (121). The light source arrangement (110) and the reflector arrangement (120) form a common light-emitting area (180) of the light-emitting device (100), in which light emission can be induced by the light source arrangement (110) and light reflection can be induced by the reflector arrangement (120). And the semiconductor light source (111) is not covered by the retroreflector (121).

2. The light-emitting device according to claim 1, The retroreflector (121) is located in the region next to and between the semiconductor light source (111).

3. The light-emitting device according to claim 1, The semiconductor light source (111) is located in the region of the middle part of the retroreflector (121).

4. The light-emitting device according to any one of the preceding claims, The light-emitting device has a carrier substrate (141), the semiconductor light source (111) is disposed on the carrier substrate, the carrier substrate (141) has printed wires (145), and the semiconductor light source (111) is electrically connected to the printed wires.

5. The light-emitting device according to claim 4, The retroreflector (121) is present on the carrier substrate (141).

6. The light-emitting device according to any one of claims 4 or 5, The semiconductor light source (111) and the retroreflector (121) are located on one side of the carrier substrate (141).

7. The light-emitting device according to any one of claims 4 or 5, The semiconductor light source (111) and the retroreflector (121) are located on opposite sides of the carrier substrate (141).

8. The light-emitting device according to claim 4, The light-emitting device has an additional substrate (142), on which the retroreflector (121) is located.

9. The light-emitting device according to claim 8, The carrier substrate (141) and the additional substrate (142) are configured such that the semiconductor light source (111) is covered by the additional substrate (142) or the retroreflector (121) is covered by the carrier substrate (141).

10. The light-emitting device according to any one of claims 4 to 9, The retroreflector (121) is implemented by means of a surface structure formed on the carrier substrate (141) or the other substrate (142).

11. The light-emitting device according to claim 10, The retroreflector (121) is implemented by means of a void (150, 151), and the void (150, 151) is provided with a metallized part (147).

12. The light-emitting device according to claim 11, The printed conductors (145) of the carrier substrate (141) are formed through the metallization portion (147).

13. The light-emitting device according to any one of claims 11 or 12, The retroreflector (121) is formed on the carrier substrate (141) in the form of a metallized void (150, 151) and is located on the side of the carrier substrate (141) where the semiconductor light source (111) is disposed on the carrier substrate (141).

14. The light-emitting device according to claim 11, The retroreflector (121) is formed on the other substrate (142) in the form of a metallized vacancy (150, 151) and is located on the other substrate (142) on the side that points in the same direction as the light emitted by the semiconductor light source (111).

15. The light-emitting device according to claim 10, The retroreflector (121) is implemented by means of a void (150, 151) in the carrier substrate (141), and there is a transparent layer (170) adjacent to the carrier substrate (141) that fills the void (150, 151) and has a greater refractive index than the carrier substrate (141).

16. The light-emitting device according to claim 10, The retroreflector (121) is implemented by means of a void (150) in a first layer (171) disposed on the carrier substrate (141), and wherein a transparent second layer (170) is present adjacent to the first layer (171) to fill the void (150), the second layer having a greater refractive index than the first layer (171).

17. The light-emitting device according to claim 10, The carrier substrate (141) has a transparent substrate material, and the retroreflector (121) is implemented by means of a protrusion (160, 161) on the carrier substrate (141), wherein the protrusion (160, 161) is located on a side of the carrier substrate (141) opposite to another side of the carrier substrate (141) on which the semiconductor light source (111) is disposed.

18. The light-emitting device according to claim 10, The carrier substrate (141) and the other substrate (142) are respectively made of transparent substrate material, wherein the retroreflector (121) is implemented by means of a protrusion (160) on the other substrate (142), and wherein the carrier substrate (141) and the other substrate (142) are arranged such that the semiconductor light source (111) and the protrusion (160) are located on opposite sides of the device formed by the carrier substrate (141) and the other substrate (142).

19. The light-emitting device according to any one of claims 4 to 9, The retroreflector (121) is implemented as a separate component applied to the carrier substrate (141) or the other substrate (142).

20. The light-emitting device according to any one of the preceding claims, The semiconductor light source (111) has lateral dimensions in the micrometer range, and / or The semiconductor light source (111) has a spacing in the single-digit millimeter range or smaller, and / or The retroreflector (121) described herein is configured in one of the following forms: Corner reflector (130); lens reflector (131); reflector with a curved reflective surface.

Images