Application of tetrafluoroethylene oligomer as heat transfer medium in semiconductor manufacturing process and energy storage

By using tetrafluoroethylene oligomers as a heat transfer medium, the problem of unsuitable boiling point and fluidity in semiconductor manufacturing and energy storage has been solved, achieving more efficient temperature control and material compatibility, and improving the safety and lifespan of the equipment.

CN121343566APending Publication Date: 2026-01-16JUHUA GROUP TECH CENT
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Patent Information

Application Number
CN202410907965.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-07-08
Publication Date
2026-01-16

AI Technical Summary

Technical Problem

Existing heat transfer media have unsuitable boiling points and fluidity in semiconductor manufacturing and energy storage, resulting in poor heat exchange performance, cavitation susceptibility, and insufficient material compatibility and compatibility, which affects equipment safety and lifespan.

Method used

Using tetrafluoroethylene oligomers, especially tetrafluoroethylene pentamers, tetrafluoroethylene tetramers, and tetrafluoroethylene hexamers, as the heat transfer medium, with suitable boiling points and fluidity, ensures safety, durability, stable temperature control, and high material compatibility and compatibility.

Benefits of technology

This enables more efficient temperature control and better material compatibility in semiconductor manufacturing and energy storage, improving equipment safety and lifespan.

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Abstract

The invention particularly relates to an application of a tetrafluoroethylene oligomer as a heat transfer medium in a semiconductor manufacturing process and energy storage. The tetrafluoroethylene oligomer comprises a tetrafluoroethylene pentamer, a tetrafluoroethylene tetramer and a tetrafluoroethylene hexamer. Based on 100 parts by weight of the tetrafluoroethylene oligomer, the weight part of the tetrafluoroethylene pentamer is greater than 85 parts. The tetrafluoroethylene oligomer heat transfer medium provided by the invention has the advantages of proper boiling point and fluidity, safety, durability, stable temperature control and high material compatibility and compatibility, and is especially suitable for being used as a heat transfer medium in semiconductor manufacturing process and energy storage.
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Description

Technical Field

[0001] This invention specifically relates to the application of a tetrafluoroethylene oligomer as a heat transfer medium in semiconductor manufacturing and energy storage. Background Technology

[0002] Currently, the main heat transfer media on the market are hydrocarbon-based, organosilicon-based, and fluorocarbon-based, with fluorocarbon compounds being the mainstream heat transfer media. These fluorocarbon products mainly include hydrofluoric acid saturated compounds, hydrofluoric acid unsaturated compounds, perfluorinated saturated compounds, and perfluorinated unsaturated compounds. Among these, perfluorinated olefins, a type of perfluorinated unsaturated compound, have the advantages of easy synthesis and low cost. Since 2022, the domestic semiconductor heat transfer media industry has developed rapidly, with perfluorinated olefins and hydrofluoroethers being the mainstream heat transfer media for semiconductor etching temperature control.

[0003] Throughout the semiconductor manufacturing process, the temperature varies considerably, especially during the semiconductor wafer etching stage, where the wafer temperature is high and requires cooling. If the boiling range of the heat transfer medium is too high, its viscosity will be high, resulting in poor heat exchange. If the boiling range of the heat transfer medium is too low, it will easily vaporize, leading to cavitation during use and rendering the medium inoperable.

[0004] With increasing energy demand and the widespread adoption of renewable energy, the energy storage industry is experiencing explosive growth against the backdrop of global carbon neutrality. Lithium-ion battery energy storage, with its advantages of high energy density, small size, and light weight, is widely used and has developed rapidly in applications such as new energy power plants and off-grid energy storage, now holding an absolute dominant position in the energy storage industry, accounting for over 95% of capacity. The performance and lifespan of lithium batteries are significantly affected by temperature; therefore, thermal management is one of the core aspects of lithium battery energy storage and is crucial for ensuring the continuous, safe, and reliable operation of energy storage systems. Currently, the cooling methods for thermal management in the domestic market are mainly air cooling and liquid cooling. Liquid cooling technology generally refers to indirect liquid cooling, primarily using cold plate liquid cooling technology, which exchanges heat through the heat transfer medium, liquid cooling plate, and battery. Compared to air cooling, liquid cooling technology has higher heat transfer efficiency, more uniform temperature control, and allows for more compact designs, improving integrated energy density. The proportion of liquid-cooled energy storage in the domestic market is expected to increase, gradually becoming the mainstream in the lithium battery energy storage market. Immersion liquid cooling is a direct liquid cooling technology that immerses lithium-ion batteries directly in an insulating heat transfer medium. Because the heated battery is in direct contact with the insulating heat transfer medium, immersion liquid cooling has advantages over indirect liquid cooling technology, such as a larger heat transfer area, higher cooling efficiency, and better temperature uniformity. In addition, the insulating heat transfer medium has no ignition point or flash point and is flame retardant, which can effectively reduce the risk of battery thermal runaway.

[0005] As energy density increases, the heat generated by lithium-ion battery energy storage also increases, placing higher demands on the safety and lifespan of energy storage systems. Therefore, efficient liquid cooling technology will become increasingly important.

[0006] Therefore, there is an urgent need in this field to develop a heat transfer medium with a boiling point and flowability suitable for semiconductor manufacturing and energy storage, which is safe, durable, temperature-controlled, and has high material compatibility and compatibility during application. Summary of the Invention

[0007] To address the shortcomings of existing technologies, this invention provides an application of tetrafluoroethylene oligomers as heat transfer media in semiconductor manufacturing and energy storage. This tetrafluoroethylene oligomer heat transfer media has suitable boiling point and fluidity, is safe and durable, has stable temperature control, and high material compatibility and compatibility, making it particularly suitable for use as a heat transfer media in semiconductor manufacturing and energy storage.

[0008] To achieve the above objectives, the present invention provides an application of tetrafluoroethylene oligomers as heat transfer media in semiconductor manufacturing and energy storage. The tetrafluoroethylene oligomers include tetrafluoroethylene pentamers, tetrafluoroethylene tetramers, and tetrafluoroethylene hexamers; based on 100 parts by weight of tetrafluoroethylene oligomers, the parts by weight of tetrafluoroethylene pentamers are greater than 85 parts.

[0009] The tetrafluoroethylene oligomer heat transfer medium of the present invention has suitable boiling point and fluidity, is safe and durable, has stable temperature control, and high material compatibility and compatibility, making it particularly suitable for use as a heat transfer medium in semiconductor manufacturing and energy storage. Attached Figure Description

[0010] Figure 1 This is a comparison graph showing the temperature stability of Example 3 and Comparative Example 1 and Comparative Example 2 at 40°C. Detailed Implementation

[0011] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0012] The specific embodiments of the present invention will be described in detail below. However, it should be noted that the scope of protection of the present invention is not limited to these specific embodiments, but is determined by the claims in the appendix.

[0013] All publications, patent applications, patents, and other references mentioned in this specification are incorporated herein by reference. Unless otherwise defined, all technical and scientific terms used in this specification have the meanings commonly understood by those skilled in the art. In case of conflict, the definitions in this specification shall prevail.

[0014] When this specification uses the prefixes "known to those skilled in the art," "prior art," or similar terms to derive materials, substances, methods, steps, apparatus, or components, the objects derived from such prefixes cover those conventionally used in the art at the time the invention was proposed, but also include those that are not currently commonly used but will become generally recognized in the art as suitable for similar purposes.

[0015] It should be noted that the two or more aspects (or embodiments) disclosed in the context of this specification can be arbitrarily combined with each other, and the resulting technical solutions (such as methods or systems) are part of the original disclosure of this specification and also fall within the protection scope of this invention.

[0016] Unless otherwise specified, all percentages, parts, ratios, etc. mentioned in this specification are based on weight, unless being based on weight would not be in accordance with the common understanding of those skilled in the art.

[0017] This invention provides an application of tetrafluoroethylene oligomers as heat transfer media in semiconductor manufacturing and energy storage. The tetrafluoroethylene oligomers include tetrafluoroethylene pentamers, tetrafluoroethylene tetramers, and tetrafluoroethylene hexamers. Based on 100 parts by weight of tetrafluoroethylene oligomers, the weight of tetrafluoroethylene pentamers is greater than 85 parts, for example, 87 parts, 88 parts, 90 parts, 92 parts, 95 parts, 97 parts, etc. In the embodiments of this invention, the weight of tetrafluoroethylene pentamers of 87 parts, 90 parts, 92 parts, and 95 parts are used as examples to illustrate the advantages of this invention, but do not limit the scope of this invention.

[0018] In this invention, any tetrafluoroethylene oligomer that meets the aforementioned requirements can achieve the purpose of this invention. According to a preferred embodiment of this invention, the tetrafluoroethylene pentamer has a weight part of 90-97 parts, more preferably 95-97 parts.

[0019] In this invention, there are no special requirements for the weight ratio of the tetrafluoroethylene tetramer and the tetrafluoroethylene hexamer. According to a preferred embodiment of this invention, the weight ratio of the tetrafluoroethylene tetramer to the tetrafluoroethylene hexamer is <1, for example, 0.9, 0.8, 0.7, 0.6, 0.5, 0.4, 0.3, 0.2, 0.1, etc., and preferably the weight ratio of the tetrafluoroethylene tetramer to the tetrafluoroethylene hexamer is 0.1-0.3.

[0020] In this invention, the boiling range of the tetrafluoroethylene oligomer can be selected from a wide range. The following is an illustrative description, but it does not limit the scope of the invention. According to a preferred embodiment of the invention, the boiling range of the tetrafluoroethylene oligomer is 100-200°C, preferably 110-180°C.

[0021] In this invention, kinematic viscosity refers to the flow properties of the heat transfer medium used in heat dissipation equipment at different temperatures. This parameter affects the heat dissipation effect and the operating temperature of the equipment, and is of great significance for equipment heat dissipation and temperature control. The kinematic viscosity of the tetrafluoroethylene oligomer at 25°C has a wide selectable range. The following is an illustrative description, but it does not limit the scope of the invention. According to a preferred embodiment of the invention, the kinematic viscosity of the tetrafluoroethylene oligomer at 25°C is ≤2 mm. 2 / s, for example, 2mm 2 / s, 1.9mm 2 / s, 1.8mm 2 / s, 1.7mm 2 / s, 1.6mm 2 / s, 1.5mm 2 / s, 1.4mm 2 / s, 1.3mm 2 / s, 1.2mm 2 / s, 1.1mm 2 / s, 1.0mm 2 / s, 0.5mm 2 / s, 0.1mm 2 Preferably, the kinematic viscosity of the tetrafluoroethylene oligomer at 25°C is ≤1.6 mm / s. 2 More preferably, the kinematic viscosity of the tetrafluoroethylene oligomer at 25°C is 1.3-1.6 mm / s. 2 / s, in this embodiment of the invention, the kinematic viscosity of the tetrafluoroethylene oligomer at 25°C is 1.37 mm. 2 / s, 1.41mm 2 / s, 1.52mm 2 / s, 1.60mm 2 / s is provided as an example to illustrate the advantages of the invention, but does not limit the scope of the invention.

[0022] In this invention, there are no special requirements for the scope of the semiconductor manufacturing process. The following is an illustrative description, but it does not limit the scope of the invention. According to a preferred embodiment of the invention, the semiconductor manufacturing process includes semiconductor wafer etching, semiconductor chip processing, and semiconductor device processing.

[0023] In this invention, the conditions for the semiconductor process can be selected from a wide range. The following is an illustrative description, but it does not limit the scope of the invention. According to a preferred embodiment of the invention, the conditions for the semiconductor process include a temperature of -20°C to 90°C, such as -20°C, -10°C, 0°C, 10°C, 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, etc. In this embodiment of the invention, a semiconductor process temperature of 40°C is used as an example to illustrate the advantages of the invention, but it does not limit the scope of the invention.

[0024] In this invention, there are no special requirements for the specific application of the tetrafluoroethylene oligomer as a heat transfer medium in semiconductor manufacturing processes. For example, in Application Example 1 of this invention, a dual-channel MPX-45FG simulation test equipment is used to simulate semiconductor manufacturing processes. The tetrafluoroethylene oligomer heat transfer medium is loaded into the cooler of the MPX-45FG simulation test equipment, and the temperature control effect of the tetrafluoroethylene oligomer heat transfer medium in the simulated semiconductor manufacturing process is tested using dual-loop PID control algorithm technology. The above is an illustrative description, but it does not limit the scope of this invention.

[0025] In this invention, the tetrafluoroethylene oligomer has a wide range of applications as a heat transfer medium in energy storage. All heat-generating energy storage components can directly contact the heat transfer medium to dissipate heat, such as chargers, electrolytic capacitors, inductors, energy storage batteries, and energy storage boxes. In application example 2, the materials of the energy storage battery and energy storage box themselves are used as examples to illustrate the advantages of this invention. In application example 3, lithium iron phosphate batteries are used as examples to illustrate the advantages of this invention, but these do not limit the scope of this invention.

[0026] The tetrafluoroethylene oligomer heat transfer medium of the present invention has suitable boiling point and fluidity, is safe and durable, has stable temperature control, and high material compatibility and compatibility, making it particularly suitable for use as a heat transfer medium in semiconductor manufacturing and energy storage.

[0027] The present invention will be described in detail below through examples, test examples, and application examples. In the following test examples, boiling point test: tested according to GB / T 6536-2010; kinematic viscosity: tested at 25°C according to national standard, using a viscometer; in application example 2, the mass change rate = increase or decrease in mass / original mass * 100%.

[0028] Example 1

[0029] A heat transfer medium comprising the following components by weight percentage:

[0030] Tetrafluoroethylene pentamer: 90 wt%;

[0031] Tetrafluoroethylene tetramer: 1 wt%;

[0032] Tetrafluoroethylene hexamer: 9 wt%.

[0033] Example 2

[0034] A heat transfer medium comprising the following components by weight percentage:

[0035] Tetrafluoroethylene pentamer: 92 wt%;

[0036] Tetrafluoroethylene tetramer: 2 wt%;

[0037] Tetrafluoroethylene hexamer: 6 wt%.

[0038] Example 3

[0039] A heat transfer medium comprising the following components by weight percentage:

[0040] Tetrafluoroethylene pentamer: 95 wt%;

[0041] Tetrafluoroethylene tetramer: 1 wt%;

[0042] Tetrafluoroethylene hexamer: 4 wt%.

[0043] Example 4

[0044] A heat transfer medium comprising the following components by weight percentage:

[0045] Tetrafluoroethylene pentamer: 87 wt%;

[0046] Tetrafluoroethylene tetramer: 7 wt%;

[0047] Tetrafluoroethylene hexamer: 6 wt%.

[0048] Comparative Example 1

[0049] A heat transfer medium comprising the following components by weight percentage:

[0050] Tetrafluoroethylene tetramer: 15 wt%;

[0051] Tetrafluoroethylene pentamer: 60 wt%;

[0052] Tetrafluoroethylene hexamer: 13 wt%;

[0053] Tetrafluoroethylene heptameric: 12 wt%.

[0054] Comparative Example 2

[0055] A heat transfer medium comprising the following components by weight percentage:

[0056] Tetrafluoroethylene tetramer: 10 wt%;

[0057] Tetrafluoroethylene pentamer: 70 wt%;

[0058] Tetrafluoroethylene hexamer: 10 wt%;

[0059] Tetrafluoroethylene heptameric: 10 wt%.

[0060] Test example:

[0061] The prepared heat transfer medium was subjected to the following performance tests, and the test results are shown in Table 1:

[0062] Table 1:

[0063]

[0064]

[0065] As can be seen from Table 1, the viscosity of the tetrafluoroethylene oligomer heat transfer medium of the present invention at 25°C is lower than that of the comparative example, and it has a suitable boiling point and fluidity, making it more suitable for application in semiconductor manufacturing and energy storage.

[0066] Application Example 1

[0067] A dual-channel MPX-45FG simulation test equipment was used to simulate semiconductor manufacturing processes. Different heat transfer media from the above embodiments were placed into the chillers of the MPX-45FG simulation test equipment. A dual-loop PID control algorithm was used to test the temperature control effect of the heat transfer media from different embodiments during the simulated semiconductor manufacturing process (the operating temperature was set to 40℃, and after the equipment ran stably for 30 minutes, the temperature changes of the heat transfer media from different embodiments were recorded within 4000 seconds). The test results are shown in Table 2. The comparison graph of the temperature stability of Example 3, Comparative Example 1, and Comparative Example 2 at 40℃ is shown below. Figure 1 As shown.

[0068] Table 2:

[0069]

[0070] Through Table 2 and Figure 1 It can be seen that when the tetrafluoroethylene oligomer proposed in this invention is used as a heat transfer medium in the simulated semiconductor process, the frequency of temperature fluctuations is less, the temperature fluctuation error is smaller, and the temperature control effect is better.

[0071] Application Example 2

[0072] Material compatibility testing of the energy storage box and the energy storage battery itself:

[0073] Accelerated aging test method was adopted. The main materials involved in the energy storage box and energy storage battery were immersed in containers containing the heat transfer medium of the above embodiment. The containers were then placed in an 80°C temperature chamber and kept at a constant temperature for 1000 hours. Samples were taken every 200 hours to test the mass change rate of the sampled materials. The evaluation was then carried out according to the evaluation criteria in Table 3. The evaluation results are shown in Table 4.

[0074] Table 3:

[0075] Evaluation results mass change rate A+ (Excellent+) X≤0.3% Category A (Excellent) 0.3%<X≤0.7% Category A (Excellent-) 0.7%<X≤1% Category B (Good) 1%<X≤3% Category C (Pass) 3%<X≤5% Category D (Unacceptable) X>5%

[0076] Table 4

[0077]

[0078]

[0079] As can be seen from Table 4, when the main materials involved in the energy storage box and the energy storage battery are immersed in the tetrafluoroethylene oligomer heat transfer medium of the present invention, the mass change rate is relatively the lowest. This indicates that the tetrafluoroethylene oligomer of the present invention, as a heat transfer medium, has better material compatibility and compatibility with the main materials involved in the energy storage box and the energy storage battery, has high chemical stability, and will not cause swelling and corrosion of the equipment materials after long-term immersion contact.

[0080] Application Example 3

[0081] Temperature control test of lithium iron phosphate battery during operation:

[0082] Test method: Square lithium iron phosphate batteries (rated capacity 280Ah) were immersed in the example and comparative examples respectively. The square lithium iron phosphate batteries were connected to the charge-discharge tester via DC cables. The temperature sensors of the temperature detection unit in the battery management system were then connected to each cell of the lithium iron phosphate battery (a total of 52 cells). The charge-discharge rate was set to 0.5C, and the charge-discharge was carried out for 2 hours. The temperature of each cell was dynamically collected at the same time, and the temperature difference between the maximum and minimum temperatures of the cells was calculated. Finally, the maximum temperature difference between the cells within 2 hours of charge-discharge was calculated. The calculation results are shown in Table 5.

[0083] Table 5:

[0084]

[0085]

[0086] As can be seen from Table 5, the maximum temperature difference between the cells of the lithium iron phosphate battery immersed in the present invention is relatively the smallest, indicating that the temperature between the cells of the lithium iron phosphate battery is more uniform. This proves that the tetrafluoroethylene oligomer heat transfer medium of the present invention has better temperature control effect, is safer and more durable, and ensures more stable battery operation in actual operation.

[0087] The preferred embodiments of the present invention have been described in detail above; however, the present invention is not limited thereto. Within the scope of the inventive concept, various simple modifications can be made to the technical solutions of the present invention, including combinations of various technical features in any other suitable manner. These simple modifications and combinations should also be considered as the content disclosed in the present invention and are all within the protection scope of the present invention.

Claims

1. Use of tetrafluoroethylene oligomers as heat transfer medium in semiconductor processing, energy storage, characterized in that The tetrafluoroethylene oligomer includes tetrafluoroethylene pentamer, tetrafluoroethylene tetramer and tetrafluoroethylene hexamer; the weight parts of the tetrafluoroethylene pentamer is > 85 parts, based on 100 parts by weight of the tetrafluoroethylene oligomer.

2. The use according to claim 1, wherein, The weight parts of the tetrafluoroethylene pentamer is 90-97 parts.

3. Use according to claim 1 or 2, wherein, The weight ratio of the tetrafluoroethylene tetramer to the tetrafluoroethylene hexamer is < 1.

4. The use according to any one of claims 1 to 3, wherein The weight ratio of the tetrafluoroethylene tetramer to the tetrafluoroethylene hexamer is 0.1-0.

3.

5. The use according to any one of claims 1 to 4, wherein, The boiling range of the tetrafluoroethylene oligomer is 100-200℃.

6. The use according to any one of claims 1 to 5, wherein, The boiling range of the tetrafluoroethylene oligomer is 110-180℃.

7. The use according to any one of claims 1 to 6, wherein The tetrafluoroethylene oligomer has a kinematic viscosity at 25°C of < 2 mm 2 / s.

8. The use according to any one of claims 1 to 7, wherein, The kinematic viscosity of the tetrafluoroethylene oligomer at 25°C is < 1.6 mm 2 / s, preferably 1.3-1.6 mm 2 / s.

9. The use according to any one of claims 1 to 8, wherein, The semiconductor process includes semiconductor wafer etching, semiconductor chip processing and semiconductor component processing.

10. The use according to any one of claims 1 to 9, wherein, The conditions of the semiconductor process include a temperature of -20℃-90℃.