Wafer temperature measurement method, device and equipment based on transmission and radiation and medium

Abstract

The invention discloses a wafer temperature measurement method, device and equipment based on transmission and radiation and a medium, and belongs to the technical field of semiconductor manufacturing, and the wafer temperature measurement method comprises the steps: obtaining a composite optical signal of a wafer; dividing the composite optical signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than that of the second signal; inputting the first signal into a preset transmission method temperature measurement model to obtain a low temperature value; inputting the second signal into a preset radiation method temperature measurement model to obtain a high temperature value; and the final temperature is calculated according to the low-temperature value and the high-temperature value. The low-temperature value and the high-temperature value are calculated through the radiation method temperature measurement model and the transmission method temperature measurement model, the final temperature is calculated by combining the two temperature values, the low-temperature process formula and the high-temperature process formula can be achieved on one machine table by combining the transmission method and the radiation method, the machine table cost is greatly reduced, and the production efficiency is improved. And the operability of the machine table is greatly improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology, specifically relating to a wafer temperature measurement method, apparatus, equipment, and medium based on transmission and radiation. Background Technology

[0002] In wafer deposition processes, it is necessary to precisely control the wafer at a specific temperature and maintain it for a certain period of time. During the heating process, not only is a rapid heating rate required, but also a uniform temperature distribution on the wafer surface with minimal temperature difference. Therefore, accurate temperature measurement across the entire process temperature range is crucial.

[0003] Radiation thermometry infers temperature by detecting the radiation energy of a wafer in a specific infrared band. However, at lower temperatures, some of the radiation emitted by the heating lamp penetrates the wafer, causing the signal received by the temperature measuring device to include not only the wafer's own radiation but also transmission interference, resulting in measurement errors.

[0004] Transmission thermometry utilizes the light emitted by a halogen lamp to penetrate a wafer, and calculates the temperature by detecting changes in the transmitted light intensity. However, as the temperature increases, the transmittance of the wafer gradually decreases, leading to a weakening of the transmitted signal and a reduction in the signal-to-noise ratio. Consequently, this method is relatively accurate below 200°C, but its effectiveness deteriorates above these temperatures. Summary of the Invention

[0005] In view of the technical problems existing in the prior art, the present invention provides a wafer temperature measurement method, device, equipment and medium based on transmission and radiation.

[0006] According to the technical solution of the present invention, a wafer temperature measurement method based on transmission and radiation includes the following steps: S1: Acquire the composite optical signal of the wafer; S2: The composite optical signal obtained in step S1 is divided into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; S3: Input the first signal obtained in step S2 into the preset transmission temperature measurement model to obtain the low temperature value; S4: Input the second signal obtained in step S2 into the preset radiation temperature measurement model to obtain the high temperature value; S5: Calculate the final temperature based on the low temperature value obtained in step S3 and the high temperature value obtained in step S4.

[0007] A further improvement of the present invention is that, in S2, the composite optical signal is divided according to a preset wavelength threshold, wherein the composite optical signal smaller than the wavelength threshold is the first signal, and the composite optical signal greater than or equal to the wavelength threshold is the second signal.

[0008] A further improvement of the present invention is that, in step S3, the following steps are included: S31: Calculate the transmitted light intensity based on the first signal; S32: The transmittance is calculated based on the transmitted light intensity and the calibrated light intensity; S33: Input the transmittance into a preset transmission method temperature measurement model to obtain the low temperature value.

[0009] A further improvement of the present invention is that, in step S4, the following steps are included: S41: Calculate the infrared radiation intensity based on the second signal; S42: Input the infrared radiation intensity into a preset radiation temperature measurement model to obtain the high temperature value.

[0010] A further improvement of the present invention is that S5 includes the following steps: S51A: Obtain the highest and lowest temperature values ​​during this process; S52A: When the highest temperature value is less than the second temperature threshold and the lowest temperature value is less than the first temperature threshold, the final temperature is equal to the lowest temperature value; When the highest temperature value is less than the second temperature threshold and the lowest temperature value belongs to [the first temperature threshold, the second temperature threshold), the final temperature is calculated based on the lowest temperature value, the highest temperature value, the first temperature threshold, and the second temperature threshold. When the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold, the final temperature is determined to be equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold.

[0011] A further improvement of the present invention is that the step of calculating the final temperature from the minimum temperature value, the maximum temperature value, the first temperature threshold, and the second temperature threshold specifically includes: S51B: Normalize the minimum temperature value according to the first temperature threshold and the second temperature threshold to obtain temperature parameters; S52B: Input the temperature parameter into the Sigmoid function to calculate the first weighting coefficient and the second weighting coefficient, and the sum of the first weighting coefficient and the second weighting coefficient is 1; S53B: The final temperature is calculated based on the first weighting coefficient, the second weighting coefficient, the minimum temperature value, and the maximum temperature value.

[0012] A further improvement of the present invention is that the first temperature threshold is 350°C and the second temperature threshold is 400°C.

[0013] According to the technical solution of the present invention, a wafer temperature measuring device based on transmission and radiation includes: The signal acquisition module is used to acquire the composite optical signal of the wafer; A segmentation module is used to divide the composite optical signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; The transmission temperature measurement module is used to input the first signal into a preset transmission temperature measurement model to obtain a low temperature value; The radiation temperature measurement module is used to input the second signal into a preset radiation temperature measurement model to obtain a high temperature value; The temperature processing module is used to calculate the final temperature based on the low temperature value and the high temperature value.

[0014] According to the technical solution of the present invention, an electronic device includes: One or more processors; Storage device for storing one or more computer programs; When the one or more computer programs are executed by the one or more processors, the one or more processors implement the above-described wafer temperature measurement method based on transmission and radiation.

[0015] According to the technical solution of the present invention, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, it implements the above-mentioned wafer temperature measurement method based on transmission and radiation.

[0016] The above technical solution has the following beneficial technical effects: This invention calculates low-temperature and high-temperature values ​​using radiation and transmission temperature measurement models, and then combines the two values ​​to obtain the final temperature. By combining transmission and radiation methods, both low-temperature and high-temperature process formulations can be implemented on a single machine, which greatly reduces machine costs and significantly improves machine operability. This invention avoids the jumps or distortions in the transition temperature zone of traditional methods by calculating a weighting coefficient between a first temperature threshold and a second temperature threshold, and using the weighting coefficient to calculate the final temperature, thereby improving the stability and repeatability of process control. Attached Figure Description

[0017] The accompanying drawings are provided to better understand the invention and are not intended to unduly limit the scope of the invention. Wherein: Figure 1 This is a flowchart of a wafer temperature measurement method based on transmission and radiation according to the present invention; Figure 2 This is a structural block diagram of a wafer temperature measuring device based on transmission and radiation according to the present invention. Figure 3 This is a fitting curve of low temperature value and high temperature value in an embodiment of the present invention; Figure 4 This is a schematic diagram of the structure of the computer system in an embodiment of the present invention. Detailed Implementation

[0018] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.

[0019] Example 1 like Figure 1 As shown, a wafer temperature measurement method based on transmission and radiation is characterized by comprising the following steps: S1: Acquire the composite optical signal of the wafer; Specifically, the composite optical signal is acquired by a temperature probe installed at the bottom of the process chamber, the temperature probe is directly facing the wafer, and the composite optical signal originates from the wafer.

[0020] S2: The composite optical signal obtained in step S1 is divided into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; Specifically, in S2, the composite optical signal is divided according to a preset wavelength threshold. The composite optical signal shorter than the wavelength threshold is the first signal, and the signal longer than or equal to the wavelength threshold is the second signal. The composite optical signal is divided into a first signal and a second signal according to the wavelength threshold. The first signal is in the visible / near-infrared band, and the second signal is in the mid-far-infrared band. Therefore, the first signal with the shorter wavelength is measured using a transmission method, while the second signal with the longer wavelength is measured using a radiation method. By selecting a more accurate method for measuring signals of different wavelengths, the accuracy of the final temperature measurement is improved.

[0021] S3: Input the first signal obtained in step S2 into the preset transmission temperature measurement model to obtain the low temperature value; Specifically, by inputting a first signal with a shorter wavelength into a preset transmission temperature measurement model, interference from large wavelength signals is avoided, thereby improving the accuracy of the transmission temperature measurement model's output.

[0022] Specifically, S3 includes the following steps: S31: Calculate the transmitted light intensity based on the first signal; Specifically, the transmitted light intensity I(λ,T) is obtained by driving a halogen lamp and measuring the light intensity attenuation after the halogen lamp passes through the wafer.

[0023] S32: The transmittance is calculated based on the transmitted light intensity and the calibrated light intensity; Specifically, the calibrated light intensity is the transmitted light intensity obtained by driving a halogen lamp without placing a wafer. The calibrated light intensity is denoted as I0(λ), the transmittance is denoted as τ(λ,T), and the transmittance is the ratio of the transmitted light intensity to the calibrated light intensity. The specific formula is as follows: τ(λ,T)=I(λ,T) / I0(λ); S33: Input the transmittance into a preset transmission method temperature measurement model to obtain the low temperature value.

[0024] Specifically, the formula for the transmission method temperature measurement model is as follows: T_trans=f(τ(λ,T)); In the formula, T_trans is the low temperature value, which is obtained through calibration of the transmission method temperature measurement model. The low temperature value is obtained by inputting the transmittance into the transmission method temperature measurement model.

[0025] S4: Input the second signal obtained in step S2 into the preset radiation temperature measurement model to obtain the high temperature value; Specifically, by inputting a second signal with a longer wavelength into a preset radiation temperature measurement model, interference from small wavelength signals is avoided, thereby improving the accuracy of the radiation temperature measurement model's output.

[0026] Specifically, S4 includes the following steps: S41: Calculate the infrared radiation intensity based on the second signal; S42: Input the infrared radiation intensity into a preset radiation temperature measurement model to obtain the high temperature value.

[0027] Specifically, the infrared radiation intensity is the radiation intensity emitted by the wafer itself at the wavelength corresponding to the second signal. The radiation-based temperature measurement model is established based on Planck's blackbody radiation law. Then, the parameter values ​​are determined by calibration lines to establish the radiation-based temperature measurement model. By inputting the infrared radiation intensity into the radiation-based temperature measurement model, the high-temperature value T_rad is obtained.

[0028] S5: Calculate the final temperature based on the low temperature value obtained in step S3 and the high temperature value obtained in step S4.

[0029] In S5, the following steps are included: S51A: Obtain the highest and lowest temperature values ​​during this process; Specifically, the highest temperature value in this process is the maximum value of the final temperature from the start of the wafer processing (t=0) to time t-1, where time t-1 is the time when the temperature was last measured.

[0030] S52A: When the highest temperature value is less than the second temperature threshold and the lowest temperature value is less than the first temperature threshold, the final temperature is equal to the lowest temperature value; When the highest temperature value is less than the second temperature threshold and the lowest temperature value belongs to [the first temperature threshold, the second temperature threshold), the final temperature is calculated based on the lowest temperature value, the highest temperature value, the first temperature threshold, and the second temperature threshold. When the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold, the final temperature is determined to be equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold.

[0031] Specifically, since the transmittance of a wafer gradually decreases with increasing temperature, in actual process temperature measurement, the transmission method is considered to have higher accuracy below 350℃, while the radiation method is considered to have higher accuracy above 400℃. Therefore, the first temperature threshold is 350℃, and the second temperature threshold is 400℃. This provides a temperature range suitable for the application environments of both the radiation and transmission methods.

[0032] When T_trans < 350℃, the final temperature T_final = T_trans.

[0033] When T_trans > 400℃, the final temperature T_final = T_rad.

[0034] Specifically, in the actual process, when the highest temperature value exceeds the second temperature threshold, a status flag within the system will be permanently set, indicating that the system has entered the "high process history" state. After the process enters the cooling stage, the system will detect the aforementioned status flag. If the flag is set (i.e., the highest process temperature > 400℃): the system will immediately activate the "cooling measurement mode". In this mode, the transmission temperature value (T_trans) is completely disabled and no longer participates in any calculations. The final output temperature (T_final) throughout the entire cooling process, regardless of the real-time temperature, is directly equal to the radiation temperature value (T_rad). If the flag is not set: the fusion strategy of the heating stage is used for cooling. Because after experiencing a high-temperature process exceeding 400℃, the surface or bulk properties of the silicon dioxide wafer may have undergone irreversible changes (such as thin film deposition, lattice reconstruction), causing its transmittance model to fail. During the cooling process based on this, the transmission measurement value (T_trans) will exhibit non-physical, drastic upward or downward jumps due to reference inaccuracy. Using this anomalous data for fitting will result in severe distortion of T_final. Therefore, using T_rad, which is unaffected by surface conditions and has a stable signal throughout the process, is the only effective way to ensure the accuracy and reliability of the cooling curve.

[0035] Specifically, the step of calculating the final temperature from the minimum temperature value, the maximum temperature value, the first temperature threshold, and the second temperature threshold includes: S51B: Normalize the minimum temperature value according to the first temperature threshold and the second temperature threshold to obtain temperature parameters; Specifically, by performing normalization, the actual temperature range is linearly mapped to a standard [0,1] interval, which facilitates subsequent calculations and makes the temperature parameter suitable for the Sigmoid function. The formula for calculating the temperature parameter x is as follows: x=(T_trans-T_low) / (T_high-T_low); In the formula, T_low is the first temperature threshold and T_high is the second temperature threshold.

[0036] S52B: Input the temperature parameter into the Sigmoid function to calculate the first weighting coefficient and the second weighting coefficient, and the sum of the first weighting coefficient and the second weighting coefficient is 1; Specifically, in S52B, the normalized temperature parameter x is input into the standard Sigmoid function for calculation. The general expression of the Sigmoid function is as follows:

[0037] In the formula, e is the natural constant; k is a preset kurtosis factor used to control the slope of the Sigmoid function in the transition region; and b is a preset center point factor used to adjust the position of the center of the Sigmoid function in the transition region. The output S(x) of this function is a continuous value between 0 and 1. The settings of b and k need to be set according to the heating rate of the machine, with the goal of keeping the temperature curves before and after fitting smooth and continuous, and maintaining the same heating rate as much as possible, for easy measurement and control.

[0038] Based on the output of S(x), the final weight coefficients α are generated through a predefined mapping relationship. The first weight coefficient α = f(S(x)), the second weight coefficient β = 1 - f(S(x)), and α + β = 1; S53B: The final temperature is calculated based on the first weighting coefficient, the second weighting coefficient, the minimum temperature value, and the maximum temperature value.

[0039] Specifically, in step S53B, a linear weighted fusion method is used to calculate the final temperature, and the formula for calculating the final temperature is as follows: T_final=β*T_trans+α*T_rad; The above steps ensure that the final temperature output T_final smoothly and continuously transitions from the pure transmission method temperature to the pure radiation method temperature.

[0040] Specifically, such as Figure 3 As shown, the high-temperature and low-temperature fitting curves are obtained when using a wafer temperature measurement method based on transmission and radiation in one of the embodiments.

[0041] Specifically, the method in this embodiment relies on the wafer's transmittance to the heating light source. Therefore, this method is not applicable to completely opaque wafers (such as wafers with a surface coated with a metal film).

[0042] Example 2 like Figure 2 As shown, a wafer temperature measuring device based on transmission and radiation is characterized by comprising: The signal acquisition module is used to acquire the composite optical signal of the wafer; A segmentation module is used to divide the composite optical signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; Specifically, in the segmentation module, the composite optical signal is divided according to a preset wavelength threshold. The composite optical signal shorter than the wavelength threshold is classified as a first signal, and the signal longer than or equal to the wavelength threshold is classified as a second signal. The composite optical signal is divided into a first signal and a second signal according to the wavelength threshold. The first signal is in the visible / near-infrared band, and the second signal is in the mid-far-infrared band. Therefore, the first signal with the shorter wavelength is measured using a transmission method, while the second signal with the longer wavelength is measured using a radiation method. By selecting a more accurate method for different wavelengths, the accuracy of the final temperature measurement is improved.

[0043] The transmission temperature measurement module is used to input the first signal into a preset transmission temperature measurement model to obtain a low temperature value; Specifically, the transmission temperature measurement module includes: The light intensity calculation submodule is used to calculate the transmitted light intensity based on the first signal; Specifically, the transmitted light intensity I(λ,T) is obtained by driving a halogen lamp and measuring the light intensity attenuation after the halogen lamp passes through the wafer.

[0044] A transmittance calculation submodule is used to calculate the transmittance based on the transmitted light intensity and the calibrated light intensity. Specifically, the calibrated light intensity is the transmitted light intensity obtained by driving a halogen lamp without placing a wafer. The calibrated light intensity is denoted as I0(λ), the transmittance is denoted as τ(λ,T), and the transmittance is the ratio of the transmitted light intensity to the calibrated light intensity. The specific formula is as follows: τ(λ,T)=I(λ,T) / I0(λ); The low-temperature value calculation submodule is used to input the transmittance into a preset transmission method temperature measurement model to obtain the low-temperature value.

[0045] Specifically, the formula for the transmission method temperature measurement model is as follows: T_trans=f(τ(λ,T)); In the formula, T_trans is the low temperature value, which is obtained through calibration of the transmission method temperature measurement model. The low temperature value is obtained by inputting the transmittance into the transmission method temperature measurement model.

[0046] The radiation temperature measurement module is used to input the second signal into a preset radiation temperature measurement model to obtain a high temperature value; Specifically, the radiation temperature measurement module includes: The radiation intensity calculation submodule is used to calculate the infrared radiation intensity based on the second signal; The high-temperature value calculation submodule is used to input the infrared radiation intensity into a preset radiation temperature measurement model to obtain the high-temperature value.

[0047] Specifically, the infrared radiation intensity is the radiation intensity emitted by the wafer itself at the wavelength corresponding to the second signal. The radiation-based temperature measurement model is established based on Planck's blackbody radiation law. Then, the parameter values ​​are determined by calibration lines to establish the radiation-based temperature measurement model. By inputting the infrared radiation intensity into the radiation-based temperature measurement model, the high-temperature value T_rad is obtained.

[0048] The temperature processing module is used to calculate the final temperature based on the low temperature value and the high temperature value.

[0049] Specifically, the temperature processing module includes: The highest temperature acquisition submodule is used to acquire the highest and lowest temperature values ​​during this process. Specifically, the highest temperature value in this process is the maximum value of the final temperature from the start of the wafer processing (t=0) to time t-1, where time t-1 is the time when the temperature was last measured.

[0050] The final temperature calculation submodule is used to determine that the final temperature is equal to the lowest temperature value when the highest temperature value is less than the second temperature threshold and the lowest temperature value is less than the first temperature threshold. When the highest temperature value is less than the second temperature threshold and the lowest temperature value belongs to [the first temperature threshold, the second temperature threshold), the final temperature is calculated based on the lowest temperature value, the highest temperature value, the first temperature threshold, and the second temperature threshold. When the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold, the final temperature is determined to be equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold.

[0051] Specifically, since the transmittance of a wafer gradually decreases with increasing temperature, in actual process temperature measurement, the transmission method is considered to have higher accuracy below 350℃, while the radiation method is considered to have higher accuracy above 400℃. Therefore, the first temperature threshold is 350℃, and the second temperature threshold is 400℃. This provides a temperature range suitable for the application environments of both the radiation and transmission methods.

[0052] When T_trans < 350℃, the final temperature T_final = T_trans.

[0053] When T_trans > 400℃, the final temperature T_final = T_rad.

[0054] Specifically, in the actual process, when the highest temperature value exceeds the second temperature threshold, a status flag within the system will be permanently set, indicating that the system has entered the "high process history" state. After the process enters the cooling stage, the system will detect the aforementioned status flag. If the flag is set (i.e., the highest process temperature > 400℃): the system will immediately activate the "cooling measurement mode". In this mode, the transmission temperature value (T_trans) is completely disabled and no longer participates in any calculations. The final output temperature (T_final) throughout the entire cooling process, regardless of the real-time temperature, is directly equal to the radiation temperature value (T_rad). If the flag is not set: the fusion strategy of the heating stage is used for cooling. Because after experiencing a high-temperature process exceeding 400℃, the surface or bulk properties of the silicon dioxide wafer may have undergone irreversible changes (such as thin film deposition, lattice reconstruction), causing its transmittance model to fail. During the cooling process based on this, the transmission measurement value (T_trans) will exhibit non-physical, drastic upward or downward jumps due to reference inaccuracy. Using this anomalous data for fitting will result in severe distortion of T_final. Therefore, using T_rad, which is unaffected by surface conditions and has a stable signal throughout the process, is the only effective way to ensure the accuracy and reliability of the cooling curve.

[0055] Specifically, in the final temperature calculation submodule, the step of calculating the final temperature from the minimum temperature value, the maximum temperature value, the first temperature threshold, and the second temperature threshold specifically includes: The normalization unit is used to normalize the minimum temperature value according to the first temperature threshold and the second temperature threshold to obtain temperature parameters; Specifically, by performing normalization, the actual temperature range is linearly mapped to a standard [0,1] interval, which facilitates subsequent calculations and makes the temperature parameter suitable for the Sigmoid function. The formula for calculating the temperature parameter x is as follows: x=(T_trans-T_low) / (T_high-T_low); In the formula, T_low is the first temperature threshold and T_high is the second temperature threshold.

[0056] The weight calculation unit is used to input the temperature parameter into the Sigmoid function to calculate the first weight coefficient and the second weight coefficient, and the sum of the first weight coefficient and the second weight coefficient is 1. Specifically, in the weight calculation unit, the normalized temperature parameter x is input into the standard Sigmoid function for calculation. The general expression of the Sigmoid function is as follows:

[0057] In the formula, e is the natural constant; k is a preset kurtosis factor used to control the slope of the Sigmoid function in the transition region; and b is a preset center point factor used to adjust the position of the center of the Sigmoid function in the transition region. The output S(x) of this function is a continuous value between 0 and 1.

[0058] Based on the output of S(x), the final weight coefficients α are generated through a predefined mapping relationship. The first weight coefficient α = f(S(x)), the second weight coefficient β = 1 - f(S(x)), and α + β = 1; The final temperature calculation unit is used to calculate the final temperature based on the first weighting coefficient, the second weighting coefficient, the minimum temperature value, and the maximum temperature value.

[0059] Specifically, in the final temperature calculation unit, a linear weighted fusion method is used to calculate the final temperature, and the formula for calculating the final temperature is as follows: T_final=β*T_trans+α*T_rad.

[0060] Specifically, the signal acquisition module consists of a temperature probe installed at the bottom of the process chamber, directly facing the wafer.

[0061] Specifically, the dividing module is a beam splitter, the signal input of which is connected to the signal output of the temperature probe. A splitter fiber is connected to the rear of the temperature probe to separate the acquired composite optical signal into two independent signals, namely a first signal and a second signal, according to a preset ratio. One signal is preferably transmitted in the visible / near-infrared band required for the transmission method, and the other signal is preferably transmitted in the mid-to-far-infrared band required for the radiation method.

[0062] Specifically, the temperature processing module receives the low-temperature value and high-temperature value output by the radiation temperature measurement module and the transmission temperature measurement module through the communication interface.

[0063] This invention also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements any of the above-described wafer temperature measurement methods based on transmission and radiation.

[0064] The present invention also provides an electronic device. The electronic device of this invention includes: one or more processors; a storage device for storing one or more computer programs; when the one or more computer programs are executed by the one or more processors, the one or more processors implement a wafer temperature measurement method based on transmission and radiation provided by the present invention. References are made below. Figure 4 This illustrates a schematic diagram of the structure of a computer system 800 suitable for implementing embodiments of the present invention in an electronic device. For example... Figure 4 As shown, the computer system 800 includes a central processing unit (CPU) 801, which can perform various appropriate actions and processes based on a computer program stored in a read-only memory (ROM) 802 or a computer program loaded from a storage section 808 into a random access memory (RAM) 803. The RAM 803 also stores various computer programs and data required for the operation of the computer system 800. The CPU 801, ROM 802, and RAM 803 are interconnected via a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0065] The following components are connected to I / O interface 805: an input section 806 including a keyboard, mouse, etc.; an output section 807 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and speakers, etc.; a storage section 808 including a hard disk, etc.; and a communication section 809 including a network interface card such as a LAN card, modem, etc. The communication section 809 performs communication processing via a network such as the Internet. A drive 810 is also connected to I / O interface 805 as needed. A removable medium 811, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., is installed on drive 810 as needed so that computer programs read from it can be installed into storage section 808 as needed.

[0066] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0067] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can occur depending on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A wafer temperature measurement method based on transmission and radiation, characterized in that, The method comprises the following steps: S1: obtaining a composite light signal of a wafer; S2: dividing the composite light signal obtained in step S1 into a first signal and a second signal according to wavelength, the wavelength of the first signal being less than the wavelength of the second signal; S3: inputting the first signal obtained in step S2 into a preset transmission method temperature measurement model to obtain a low-temperature temperature value; S4: inputting the second signal obtained in step S2 into a preset radiation method temperature measurement model to obtain a high-temperature temperature value; S5: calculating a final temperature according to the low-temperature temperature value obtained in step S3 and the high-temperature temperature value obtained in step S4.

2. The method of claim 1, wherein the method is a transmission and radiation based wafer temperature measurement method. In S2, the composite light signal is divided according to a preset wavelength threshold, the composite light signal less than the wavelength threshold being the first signal, and the composite light signal greater than or equal to the wavelength threshold being the second signal.

3. The method of claim 1, wherein the method is a transmission and radiation based wafer temperature measurement method. In S3, the following steps are included: S31: calculating a transmission light intensity according to the first signal; S32: calculating a transmission rate according to the transmission light intensity and a calibration light intensity; S33: inputting the transmission rate into a preset transmission method temperature measurement model to obtain a low-temperature temperature value.

4. The method of claim 1, wherein the method is a transmission and radiation based wafer temperature measurement method. In S4, the following steps are included: S41: calculating an infrared radiation intensity according to the second signal; S42: inputting the infrared radiation intensity into a preset radiation method temperature measurement model to obtain a high-temperature temperature value.

5. The method of claim 1, wherein the method is a transmission and radiation based wafer temperature measurement method. In S5, the following steps are included: S51A: obtaining a maximum temperature value and a minimum temperature value in the current process; S52A: when the maximum temperature value is less than a second temperature threshold and the minimum temperature value is less than a first temperature threshold, the final temperature is equal to the minimum temperature value; when the maximum temperature value is less than the second temperature threshold and the minimum temperature value is in the range of [the first temperature threshold, the second temperature threshold], the final temperature is calculated according to the minimum temperature value, the maximum temperature value, the first temperature threshold and the second temperature threshold; when the maximum temperature value is greater than or equal to the second temperature threshold and the minimum temperature value is greater than or equal to the second temperature threshold, it is determined that the final temperature is equal to the maximum temperature value, and the first temperature threshold is less than the second temperature threshold.

6. The method of claim 5, wherein the method is a transmission and radiation based wafer temperature measurement method. In the step of calculating the final temperature according to the minimum temperature value, the maximum temperature value, the first temperature threshold and the second temperature threshold, the following steps are included: S51B: normalizing the minimum temperature value according to the first temperature threshold and the second temperature threshold to obtain a temperature parameter; S52B: inputting the temperature parameter into a Sigmoid function to obtain a first weight coefficient and a second weight coefficient, the sum of the first weight coefficient and the second weight coefficient being 1; S53B: calculating the final temperature according to the first weight coefficient, the second weight coefficient, the minimum temperature value and the maximum temperature value.

7. The method of claim 5, wherein the method is a transmission and radiation based wafer temperature measurement method. The first temperature threshold is 350℃, and the second temperature threshold is 400℃.

8. A transmission and radiation based wafer temperature measurement device, comprising: The method comprises the following steps: a signal acquisition module for obtaining a composite light signal of a wafer; a division module for dividing the composite light signal into a first signal and a second signal according to wavelength, the wavelength of the first signal being less than the wavelength of the second signal; a transmission temperature measurement module for inputting the first signal into a preset transmission method temperature measurement model to obtain a low-temperature temperature value; a radiation temperature measurement module, configured to input the second signal into a preset radiation method temperature measurement model to obtain a high-temperature temperature value; a temperature processing module, configured to calculate a final temperature according to the low-temperature temperature value and the high-temperature temperature value.

9. An electronic device, comprising: comprise: one or more processors; a storage device configured to store one or more computer programs; when the one or more computer programs are executed by the one or more processors, the one or more processors implement a wafer temperature measurement method based on transmission and radiation as claimed in any one of claims 1-7.

10. A computer-readable storage medium having stored thereon a computer program, characterized in that, the computer program is executed by the processor to implement a wafer temperature measurement method based on transmission and radiation as claimed in any one of claims 1-7.

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