A wafer temperature measurement method and device based on transmission and radiation, equipment and medium

Abstract

The application discloses a wafer temperature measuring method and device based on transmission and radiation, equipment and medium, and belongs to the technical field of semiconductor manufacturing. The wafer temperature measuring method comprises the following steps: obtaining a composite light signal of a wafer; dividing the composite light signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than that of the second signal; inputting the first signal into a preset transmission method temperature measuring model to obtain a low-temperature temperature value; inputting the second signal into a preset radiation method temperature measuring model to obtain a high-temperature temperature value; and calculating a final temperature according to the low-temperature temperature value and the high-temperature temperature value. The low-temperature temperature value and the high-temperature temperature value are calculated through the radiation method temperature measuring model and the transmission method temperature measuring model, and then the final temperature is calculated in combination with the two temperature values, so that the two types of process formulations of low temperature and high temperature can be realized on one machine table in combination with the transmission method and the radiation method, the cost of the machine table is greatly reduced, and the operability of the machine table is greatly improved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer temperature measurement method and device based on transmission and radiation, equipment and medium. BACKGROUND

[0002] In the wafer coating process, the wafer needs to be accurately controlled at a specific temperature and maintained for a certain period of time. During the temperature rising process, not only is the temperature rising rate required to be fast, but also the wafer surface temperature distribution needs to be uniform and the temperature difference needs to be as small as possible. Therefore, it is crucial to achieve accurate temperature measurement in the entire process temperature range.

[0003] The radiation temperature measurement method detects the radiation energy of the wafer in a specific infrared wave band to deduce the temperature. However, at a lower temperature, part of the radiation emitted by the heating lamp will penetrate the wafer, causing the signal received by the temperature measurement device to not only contain the radiation of the wafer itself, but also be contaminated with transmission interference, resulting in temperature measurement deviation.

[0004] The transmission temperature measurement method uses the light emitted by the halogen lamp to penetrate the wafer and calculates the temperature by detecting the change in transmitted light intensity. However, as the temperature rises, the light transmittance of the wafer gradually decreases, resulting in a decrease in transmission signal and a decrease in signal-to-noise ratio, which makes this method more accurate below 200℃ and less effective above this temperature. SUMMARY

[0005] Based on the technical problems existing in the prior art, the present application provides a wafer temperature measurement method and device based on transmission and radiation, equipment and medium.

[0006] According to the technical scheme of the present application, a wafer temperature measurement method based on transmission and radiation comprises the following steps:

[0007] S1: obtaining a composite optical signal of a wafer;

[0008] S2: dividing the composite optical signal obtained in step S1 into a first signal and a second signal according to wavelength, the wavelength of the first signal being less than the wavelength of the second signal;

[0009] S3: inputting the first signal obtained in step S2 into a preset transmission method temperature measurement model to obtain a low temperature value;

[0010] S4: inputting the second signal obtained in step S2 into a preset radiation method temperature measurement model to obtain a high temperature value;

[0011] S5: calculating a final temperature according to the low temperature value obtained in step S3 and the high temperature value obtained in step S4.

[0012] The further improvement of the present application is that in S2, the composite optical signal is divided according to a preset wavelength threshold, and the composite optical signal less than the wavelength threshold is a first signal, and the composite optical signal greater than or equal to the wavelength threshold is a second signal.

[0013] The further improvement of the present application is that in S3, the following steps are included:

[0014] S31: calculating a transmission light intensity according to the first signal;

[0015] S32: calculating a transmission rate according to the transmission light intensity and a calibration light intensity;

[0016] S33: inputting the transmission rate into a preset transmission method temperature measurement model to obtain a low-temperature temperature value.

[0017] The further improvement of the present application is that in S4, the following steps are included:

[0018] S41: calculating an infrared radiation intensity according to the second signal;

[0019] S42: inputting the infrared radiation intensity into a preset radiation method temperature measurement model to obtain a high-temperature temperature value.

[0020] The further improvement of the present application is that in S5, the following steps are included:

[0021] S51A: obtaining a highest temperature value and a lowest temperature value in the present process;

[0022] S52A: when the highest temperature value is less than a second temperature threshold and the lowest temperature value is less than a first temperature threshold, the final temperature is equal to the lowest temperature value;

[0023] when the highest temperature value is less than the second temperature threshold and the lowest temperature value is in [the first temperature threshold, the second temperature threshold), the final temperature is calculated according to the lowest temperature value, the highest temperature value, the first temperature threshold and the second temperature threshold;

[0024] when the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold, it is determined that the final temperature is equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold.

[0025] The further improvement of the present application is that in the step of calculating the final temperature according to the lowest temperature value, the highest temperature value, the first temperature threshold and the second temperature threshold, the following steps are included:

[0026] S51B: normalizing the lowest temperature value according to the first temperature threshold and the second temperature threshold to obtain a temperature parameter;

[0027] S52B: inputting the temperature parameter into a Sigmoid function to calculate a first weight coefficient and a second weight coefficient, wherein the first weight coefficient and the second weight coefficient are equal to 1;

[0028] S53B: calculating a final temperature according to the first weight coefficient, the second weight coefficient, the lowest temperature value and the highest temperature value.

[0029] The first temperature threshold is 350 DEG C, and the second temperature threshold is 400 DEG C.

[0030] According to the technical scheme of the present application, a wafer temperature measuring device based on transmission and radiation comprises:

[0031] A signal acquisition module is configured to acquire a composite optical signal of the wafer.

[0032] A division module is configured to divide the composite optical signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is less than the wavelength of the second signal.

[0033] A transmission temperature measuring module is configured to input the first signal into a preset transmission method temperature measuring model to obtain a low-temperature temperature value.

[0034] A radiation temperature measuring module is configured to input the second signal into a preset radiation method temperature measuring model to obtain a high-temperature temperature value.

[0035] A temperature processing module is configured to calculate a final temperature according to the low-temperature temperature value and the high-temperature temperature value.

[0036] According to the technical scheme of the present application, an electronic device comprises:

[0037] One or more processors;

[0038] A storage device is configured to store one or more computer programs.

[0039] When the one or more computer programs are executed by the one or more processors, the one or more processors implement the above-mentioned wafer temperature measuring method based on transmission and radiation.

[0040] According to the technical scheme of the present application, a computer readable storage medium has one or more computer programs stored thereon, and the computer programs are executed by a processor to implement the above-mentioned wafer temperature measuring method based on transmission and radiation.

[0041] The above technical scheme has the following beneficial technical effects:

[0042] The present application calculates low-temperature temperature values and high-temperature temperature values through a radiation method temperature measurement model and a transmission method temperature measurement model, and then calculates a final temperature by combining the two temperature values, so that low-temperature and high-temperature two types of process formulas can be realized on one machine table by combining the transmission method and the radiation method, thereby greatly reducing the cost of the machine table and greatly improving the operability of the machine table.

[0043] The present application calculates a weight coefficient between the first temperature threshold and the second temperature threshold, and calculates the final temperature by using the weight coefficient, thereby avoiding the jump or distortion of the traditional method in the transition temperature zone, and improving the stability and repeatability of the process control. BRIEF DESCRIPTION OF DRAWINGS

[0044] The accompanying drawings are used to better understand the present application and do not constitute undue limitations on the present application. Among them:

[0045] Figure 1 is a flowchart of a wafer temperature measurement method based on transmission and radiation of the present application;

[0046] Figure 2 is a structural block diagram of a wafer temperature measurement device based on transmission and radiation of the present application;

[0047] Figure 3 is a fitting curve diagram of low-temperature temperature values and high-temperature temperature values in an embodiment of the present application;

[0048] Figure 4 is a structural schematic diagram of a computer system in an embodiment of the present application. DETAILED DESCRIPTION

[0049] The exemplary embodiments of the present application are described below in conjunction with the accompanying drawings, which include various details of the embodiments of the present application to help understanding, and should be considered only as exemplary. Therefore, those of ordinary skill in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present application. Also, in order to be clear and concise, the description below omits the description of well-known functions and structures.

[0050] Embodiment one

[0051] As shown in Figure 1 , a wafer temperature measurement method based on transmission and radiation, characterized in that it comprises the following steps:

[0052] S1: obtaining a composite light signal of a wafer;

[0053] Specifically, the composite light signal is obtained by a temperature measurement probe installed at the bottom of a process chamber, the temperature measurement probe directly faces the wafer, and the composite light signal comes from the wafer.

[0054] S2: dividing the composite optical signal obtained in step S1 into a first signal and a second signal according to wavelength, the wavelength of the first signal being less than the wavelength of the second signal;

[0055] Specifically, in S2, the composite optical signal is divided according to a preset wavelength threshold, the composite optical signal less than the wavelength threshold is the first signal, and the composite optical signal greater than or equal to the wavelength threshold is the second signal. The composite optical signal is divided into the first signal and the second signal according to the wavelength threshold, the first signal is a visible / near-infrared waveband, and the second signal is a mid-infrared waveband. Thus, the first signal with a smaller wavelength is measured by a transmission method, the second signal with a larger wavelength is measured by a radiation method, and the method with more accurate measurement results is selected for signals with different wavelengths, thereby improving the accuracy of the final temperature measurement.

[0056] S3: inputting the first signal obtained in step S2 into a preset transmission method temperature measurement model to obtain a low-temperature temperature value;

[0057] Specifically, by inputting the first signal with a smaller wavelength into the preset transmission method temperature measurement model, the interference of the large-wavelength signal is avoided, and the accuracy of the output of the transmission method temperature measurement model is improved.

[0058] Specifically, in S3, the following steps are included:

[0059] S31: calculating a transmission light intensity according to the first signal;

[0060] Specifically, the transmission light intensity I(λ, T) is obtained by driving the halogen lamp and measuring the light intensity attenuation of the halogen lamp after passing through the wafer.

[0061] S32: calculating a transmittance according to the transmission light intensity and a calibration light intensity;

[0062] Specifically, the calibration light intensity is the transmission light intensity obtained by driving the halogen lamp without the wafer, the calibration light intensity is denoted as I0(λ), the transmittance is denoted as τ(λ, T), and the transmittance is the ratio of the transmission light intensity to the calibration light intensity, and the specific formula is as follows:

[0063] τ(λ, T) = I(λ, T) / I0(λ);

[0064] S33: inputting the transmittance into a preset transmission method temperature measurement model to obtain a low-temperature temperature value.

[0065] Specifically, the transmission method temperature measurement model formula is as follows: T_trans = f(τ(λ, T));

[0066] In the formula, T_trans is the low temperature value, which is obtained through calibration of the transmission method temperature measurement model. The low temperature value is obtained by inputting the transmittance into the transmission method temperature measurement model.

[0067] S4: Input the second signal obtained in step S2 into the preset radiation temperature measurement model to obtain the high temperature value;

[0068] Specifically, by inputting a second signal with a longer wavelength into a preset radiation temperature measurement model, interference from small wavelength signals is avoided, thereby improving the accuracy of the radiation temperature measurement model's output.

[0069] Specifically, S4 includes the following steps:

[0070] S41: Calculate the infrared radiation intensity based on the second signal;

[0071] S42: Input the infrared radiation intensity into a preset radiation temperature measurement model to obtain the high temperature value.

[0072] Specifically, the infrared radiation intensity is the radiation intensity emitted by the wafer itself at the wavelength corresponding to the second signal. The radiation-based temperature measurement model is established based on Planck's blackbody radiation law. Then, the parameter values ​​are determined by calibration lines to establish the radiation-based temperature measurement model. By inputting the infrared radiation intensity into the radiation-based temperature measurement model, the high-temperature value T_rad is obtained.

[0073] S5: Calculate the final temperature based on the low temperature value obtained in step S3 and the high temperature value obtained in step S4.

[0074] In S5, the following steps are included:

[0075] S51A: Obtain the highest and lowest temperature values ​​during this process;

[0076] Specifically, the highest temperature value in this process is the maximum value of the final temperature from the start of the wafer processing (t=0) to time t-1, where time t-1 is the time when the temperature was last measured.

[0077] S52A: When the highest temperature value is less than the second temperature threshold and the lowest temperature value is less than the first temperature threshold, the final temperature is equal to the lowest temperature value;

[0078] When the highest temperature value is less than the second temperature threshold and the lowest temperature value belongs to [the first temperature threshold, the second temperature threshold), the final temperature is calculated based on the lowest temperature value, the highest temperature value, the first temperature threshold, and the second temperature threshold.

[0079] determining that the final temperature is equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold when the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold.

[0080] Specifically, since the transmittance of the wafer gradually decreases with the increase of temperature, in the actual process temperature measurement process, below 350℃, it is considered that the transmittance method temperature measurement accuracy is higher, above 400℃, the radiation method temperature measurement accuracy is higher, so the first temperature threshold is 350℃, and the second temperature threshold is 400℃. Thus, the temperature interval conforming to the application environment of the radiation method and the transmittance method is given.

[0081] When T_trans<350℃, the final temperature T_final=T_trans.

[0082] When T_trans>400℃, the final temperature T_final=T_rad.

[0083] Specifically, in the actual process, when the highest temperature value is greater than the second temperature threshold, a state flag bit in the system will be permanently set, indicating that the system has entered the "high process history" state. After the process enters the cooling stage, the system will detect the above-mentioned state flag bit. If the flag bit is set (i.e. the highest temperature of the process >400℃): the system will immediately start the "cooling measurement mode". In this mode, the transmittance method temperature value (T_trans) is completely disabled and no longer participates in any calculation. The final output temperature (T_final) is directly equal to the radiation method temperature value (T_rad) throughout the cooling process, regardless of the real-time temperature. If the flag bit is not set: the fusion strategy of the warming-up stage is used for cooling. Since after experiencing a high-temperature process of more than 400℃, the surface or body characteristics of the silicon dioxide wafer may have undergone irreversible changes (such as thin film deposition, lattice reconstruction), resulting in the failure of its transmittance model. In the cooling process based on this, the transmittance method measurement value (T_trans) will jump up or down non-physically and severely due to the reference misalignment. If this abnormal data is continued to be used for fitting, it will cause serious distortion of T_final. Therefore, the use of T_rad, which is not directly affected by the surface state and has stable signal, throughout the process is the only effective means to ensure the authenticity and reliability of the cooling curve.

[0084] Specifically, in the step of calculating the final temperature from the lowest temperature value, the highest temperature value, the first temperature threshold and the second temperature threshold, it specifically includes:

[0085] S51B: normalizing the lowest temperature value according to the first temperature threshold and the second temperature threshold to obtain a temperature parameter;

[0086] Specifically, by performing normalization processing, the actual temperature interval is linearly mapped to a standard [0, 1] interval, facilitating subsequent calculation, and making the temperature parameter suitable for a Sigmoid function. The calculation formula of the temperature parameter x is as follows:

[0087] x = (T_trans - T_low) / (T_high - T_low);

[0088] In the formula, T_low is a first temperature threshold, and T_high is a second temperature threshold.

[0089] S52B: inputting the temperature parameter into a Sigmoid function to calculate a first weight coefficient and a second weight coefficient, the sum of the first weight coefficient and the second weight coefficient being 1;

[0090] Specifically, in S52B, the normalized temperature parameter x is input into a standard Sigmoid function for calculation. The general expression of the Sigmoid function is as follows:

[0091]

[0092] In the formula, e is a natural constant; k is a preset steepness factor for controlling the slope of the Sigmoid function in the transition zone; and b is a preset center point factor for adjusting the position of the center of the Sigmoid function in the transition zone. The output S(x) of the function is a continuous value between 0 and 1. The settings of b and k need to be set according to the machine temperature rising rate, and the goal is to keep the temperature curves before and after fitting and the temperature curve in fitting smooth and continuous and as same as possible in rising speed, facilitating measurement and control.

[0093] Based on the output of S(x), the final weight coefficient a is generated through a predefined mapping relationship. The first weight coefficient a = f(S(x)), the second weight coefficient β = 1 - f(S(x)), and a + β = 1;

[0094] S53B: calculating a final temperature according to the first weight coefficient, the second weight coefficient, the lowest temperature value, and the highest temperature value.

[0095] Specifically, in step S53B, the final temperature is calculated by linear weighted fusion, and the calculation formula of the final temperature is as follows:

[0096] T_final = β * T_trans + a * T_rad;

[0097] Through the above steps, it is ensured that the final temperature output T_final is smoothly and continuously transitioned from the pure transmission method temperature to the pure radiation method temperature.

[0098] Specifically, as Figure 3As shown, when one of the embodiments based on transmission and radiation wafer temperature measurement method is adopted, high temperature and low temperature fitting curves are obtained.

[0099] Specifically, the method in the embodiment relies on the light transmission of the wafer to the heating light source. Therefore, the method is not applicable to the wafer that is completely opaque (such as the wafer with a surface coated with a metal film).

[0100] Embodiment two

[0101] As Figure 2 shown, a wafer temperature measurement device based on transmission and radiation, characterized in that it comprises:

[0102] A signal acquisition module for acquiring a composite light signal of the wafer;

[0103] A division module for dividing the composite light signal into a first signal and a second signal according to wavelength, the wavelength of the first signal being less than the wavelength of the second signal;

[0104] Specifically, in the division module, the composite light signal is divided according to a preset wavelength threshold, the composite light signal less than the wavelength threshold is the first signal, and the composite light signal greater than or equal to the wavelength threshold is the second signal. The composite light signal is divided into the first signal and the second signal according to the wavelength threshold, the first signal is in the visible / near-infrared band, and the second signal is in the mid-infrared band. Thus, the transmission method is used to measure the temperature of the first signal with smaller wavelength, and the radiation method is used to measure the temperature of the second signal with larger wavelength. The method with more accurate measurement result is selected for signals with different wavelengths, thereby improving the accuracy of the final temperature measurement.

[0105] A transmission temperature measurement module for inputting the first signal into a preset transmission temperature measurement model to obtain a low temperature value;

[0106] Specifically, in the transmission temperature measurement module, it comprises:

[0107] An optical intensity calculation submodule for calculating the transmission optical intensity according to the first signal;

[0108] Specifically, the transmission optical intensity I(λ, T) is obtained by driving the halogen lamp and measuring the optical intensity attenuation of the halogen lamp passing through the wafer.

[0109] A transmittance calculation submodule for calculating the transmittance according to the transmission optical intensity and the calibration optical intensity;

[0110] Specifically, the calibration optical intensity is the transmission optical intensity obtained by driving the halogen lamp without the wafer, the calibration optical intensity is denoted as I0(λ), the transmittance is denoted as τ(λ, T), and the transmittance is the ratio of the transmission optical intensity to the calibration optical intensity, and the specific formula is as follows:

[0111] τ(λ, T) = I(λ, T) / I0(λ);

[0112] The low-temperature temperature value calculation submodule is configured to input the transmittance into a preset transmittance thermometry model to obtain a low-temperature temperature value.

[0113] Specifically, the transmittance thermometry model formula is as follows: T_trans = f(τ(λ, T)).

[0114] In the formula, T_trans is a low-temperature temperature value, the transmittance thermometry model is obtained through calibration, and the low-temperature temperature value is obtained by inputting the transmittance into the transmittance thermometry model.

[0115] The radiation thermometry module is configured to input the second signal into a preset radiation thermometry model to obtain a high-temperature temperature value.

[0116] Specifically, the radiation thermometry module includes the following modules.

[0117] The radiation intensity calculation submodule is configured to calculate an infrared radiation intensity according to the second signal.

[0118] The high-temperature temperature value calculation submodule is configured to input the infrared radiation intensity into a preset radiation thermometry model to obtain a high-temperature temperature value.

[0119] Specifically, the infrared radiation intensity is the radiation intensity of the wafer itself at the wavelength corresponding to the second signal. The radiation thermometry model is established according to the Planck blackbody radiation law, and then the parameter value is determined through calibration to establish the radiation thermometry model. The high-temperature temperature value T_rad is obtained by inputting the infrared radiation intensity into the radiation thermometry model.

[0120] The temperature processing module is configured to calculate a final temperature according to the low-temperature temperature value and the high-temperature temperature value.

[0121] Specifically, the temperature processing module includes the following modules.

[0122] The highest temperature acquisition submodule is configured to acquire a highest temperature value and a lowest temperature value in the current process.

[0123] Specifically, the highest temperature value in the current process is the maximum value of the final temperature from the start of the wafer processing (t=0) to t-1, and t-1 is the time of the last temperature measurement at the current time.

[0124] The final temperature calculation submodule is configured to, when the highest temperature value is less than a second temperature threshold and the lowest temperature value is less than a first temperature threshold, set the final temperature equal to the lowest temperature value.

[0125] when the maximum temperature value is less than the second temperature threshold and the minimum temperature value is in [the first temperature threshold, the second temperature threshold), a final temperature is calculated according to the minimum temperature value, the maximum temperature value, the first temperature threshold and the second temperature threshold;

[0126] when the maximum temperature value is greater than or equal to the second temperature threshold and the minimum temperature value is greater than or equal to the second temperature threshold, it is determined that the final temperature is equal to the maximum temperature value, and the first temperature threshold is less than the second temperature threshold.

[0127] Specifically, since the transmittance of the wafer gradually decreases with the increase of temperature, in the actual process temperature measurement process, it is considered that the transmittance method has higher accuracy below 350 DEG C, and the radiation method has higher accuracy above 400 DEG C, so the first temperature threshold is 350 DEG C, and the second temperature threshold is 400 DEG C. Thus, the temperature interval conforming to the application environment of the radiation method and the transmittance method is given.

[0128] when T_trans<350℃, the final temperature T_final=T_trans.

[0129] when T_trans>400℃, the final temperature T_final=T_rad.

[0130] Specifically, in the actual process, when the maximum temperature value is greater than the second temperature threshold, a state flag bit in the system will be permanently set, indicating that the system has entered the "high process history" state. After the process enters the cooling stage, the system will detect the above-mentioned state flag bit. If the flag bit is set (i.e. the maximum temperature of the process > 400 DEG C): the system will immediately start the "cooling measurement mode". In this mode, the transmittance method temperature value (T_trans) is completely disabled and no longer participates in any calculation. The final output temperature (T_final) is directly equal to the radiation method temperature value (T_rad) during the entire cooling process, regardless of the real-time temperature. If the flag bit is not set: the fusion strategy of the warming-up stage is used for cooling. Since after experiencing a high-temperature process of more than 400 DEG C, the surface or body characteristics of the silicon dioxide wafer may have undergone irreversible changes (such as film deposition, lattice reconstruction), resulting in the failure of its transmittance model. In the cooling process based on this, the transmittance method measurement value (T_trans) will have a non-physical, sharp upward or downward jump due to the reference misalignment. If this abnormal data is continued to be used for fitting, it will cause serious distortion of T_final. Therefore, the use of T_rad, which is not directly affected by the surface state and has stable signal, throughout the process is the only effective means to ensure the authenticity and reliability of the cooling curve.

[0131] Specifically, in the final temperature calculation submodule, the step of calculating the final temperature from the minimum temperature value, the maximum temperature value, the first temperature threshold and the second temperature threshold comprises:

[0132] a normalization unit configured to normalize the lowest temperature value according to the first temperature threshold and the second temperature threshold to obtain a temperature parameter;

[0133] Specifically, by performing normalization processing, the actual temperature interval is linearly mapped to a standard [0, 1] interval, which is convenient for subsequent calculation, and the temperature parameter is suitable for a Sigmoid function. The calculation formula of the temperature parameter x is as follows:

[0134] x = (T_trans-T_low) / (T_high-T_low);

[0135] In the formula, T_low is the first temperature threshold, and T_high is the second temperature threshold.

[0136] a weight calculation unit configured to input the temperature parameter into a Sigmoid function to obtain a first weight coefficient and a second weight coefficient, and the sum of the first weight coefficient and the second weight coefficient is 1;

[0137] Specifically, in the weight calculation unit, the normalized temperature parameter x is input into a standard Sigmoid function for calculation. The general expression of the Sigmoid function is as follows:

[0138]

[0139] In the formula, e is a natural constant; k is a preset steepness factor for controlling the slope of the Sigmoid function in the transition zone; and b is a preset center point factor for adjusting the position of the center of the Sigmoid function in the transition zone. The output S(x) of the function is a continuous value between 0 and 1.

[0140] Based on the output of S(x), a final weight coefficient a is generated through a predefined mapping relationship. The first weight coefficient a = f(S(x)), the second weight coefficient β = 1-f(S(x)), and a+β = 1;

[0141] a final temperature calculation unit configured to calculate a final temperature according to the first weight coefficient, the second weight coefficient, the lowest temperature value, and the highest temperature value.

[0142] Specifically, in the final temperature calculation unit, a linear weighted fusion is used to calculate the final temperature. The calculation formula of the final temperature is as follows:

[0143] T_final = β*T_trans + a*T_rad.

[0144] Specifically, the signal acquisition module is a temperature measurement probe installed at the bottom of the process chamber and directly facing the wafer.

[0145] Specifically, the dividing module is a light splitting element, a signal input end of the light splitting element is connected with a signal output end of the temperature measuring probe, and a two-way splitting optical fiber is connected behind the temperature measuring probe, so that the collected composite light signal is separated into two independent signals, i.e., a first signal and a second signal, according to a preset ratio. One of the two independent signals is preferably a visible light / near-infrared wave band required by the transmission method, and the other is a medium / far-infrared wave band required by the radiation method.

[0146] Specifically, the temperature processing module receives the low-temperature temperature value and the high-temperature temperature value output by the radiation temperature measuring module and the transmission temperature measuring module through a communication interface.

[0147] The embodiment of the present application also provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to realize any one of the wafer temperature measuring methods based on transmission and radiation.

[0148] The present application also provides an electronic device. The electronic device of the embodiment of the present application comprises: one or more processors; a storage device for storing one or more computer programs; and when the one or more computer programs are executed by the one or more processors, the one or more processors realize the wafer temperature measuring method based on transmission and radiation provided by the present application. The following refers to Figure 4 which shows a structural schematic diagram of a computer system 800 suitable for realizing the electronic device of the embodiment of the present application. As shown in the figure, Figure 4 The computer system 800 comprises a central processing unit (CPU) 801, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 802 or a computer program loaded from a storage part 808 to a random access memory (RAM) 803. In the RAM 803, various computer programs and data required for the operation of the computer system 800 are also stored. The CPU 801, the ROM 802 and the RAM 803 are connected with each other through a bus 804. An input / output (I / O) interface 805 is also connected to the bus 804.

[0149] The following components are connected to the I / O interface 805: an input section 806 including a keyboard, a mouse, etc.; an output section 807 including a display such as a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 808 including a hard disk, etc.; and a communication section 809 including a network interface card such as a LAN card, a modem, etc. The communication section 809 performs a communication process via a network such as the Internet. A drive 810 is also connected to the I / O interface 805 as necessary. A removable recording medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc. is attached to the drive 810 as necessary, so that a computer program read out from it is installed in the storage section 808 as necessary.

[0150] It should be clearly understood by those skilled in the art that, for the convenience and brevity of description, only the division of the above functional units and modules is taken as an example, and in actual application, the above functions can be completed by different functional units and modules according to needs, that is, the internal structure of the device is divided into different functional units or modules to complete all or part of the functions described above. Each functional unit and module in the embodiment can be integrated in one processing unit, or each unit can exist physically, or two or more units can be integrated in one unit, and the integrated unit can be realized in the form of hardware or in the form of a software functional unit. In addition, the specific names of each functional unit and module are only for the convenience of mutual differentiation, and do not limit the protection scope of the present application. The specific working process of the units and modules in the system can refer to the corresponding process in the foregoing method embodiments, which will not be repeated here.

[0151] The foregoing detailed description does not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can occur depending on design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A wafer temperature measurement method based on transmission and radiation, characterized in that, Includes the following steps: S1: Acquire the composite optical signal of the wafer; S2: The composite optical signal obtained in step S1 is divided into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; S3: Input the first signal obtained in step S2 into the preset transmission temperature measurement model to obtain the low temperature value; S4: Input the second signal obtained in step S2 into the preset radiation temperature measurement model to obtain the high temperature value; S5: Calculate the final temperature based on the low temperature value obtained in step S3 and the high temperature value obtained in step S4; S5 includes the following steps: S51A: Obtain the highest and lowest temperature values ​​during this process; S52A: When the highest temperature value is less than the second temperature threshold and the lowest temperature value is less than the first temperature threshold, the final temperature is equal to the lowest temperature value; When the highest temperature value is less than the second temperature threshold and the lowest temperature value belongs to [the first temperature threshold, the second temperature threshold], the final temperature is calculated based on the lowest temperature value, the highest temperature value, the first temperature threshold, and the second temperature threshold. When the highest temperature value is greater than or equal to the second temperature threshold and the lowest temperature value is greater than or equal to the second temperature threshold, the final temperature is determined to be equal to the highest temperature value and the first temperature threshold is less than the second temperature threshold. The steps for calculating the final temperature based on the minimum temperature value, the maximum temperature value, the first temperature threshold, and the second temperature threshold specifically include: S51B: Normalize the minimum temperature value according to the first temperature threshold and the second temperature threshold to obtain temperature parameters; S52B: Input the temperature parameter into the Sigmoid function to calculate the first weighting coefficient and the second weighting coefficient, and the sum of the first weighting coefficient and the second weighting coefficient is 1; S53B: The final temperature is calculated based on the first weighting coefficient, the second weighting coefficient, the minimum temperature value, and the maximum temperature value.

2. The wafer temperature measurement method based on transmission and radiation according to claim 1, characterized in that, In S2, the composite optical signal is divided according to a preset wavelength threshold. The composite optical signal with wavelengths less than the wavelength threshold is the first signal, and the composite optical signal with wavelengths greater than or equal to the wavelength threshold is the second signal.

3. The wafer temperature measurement method based on transmission and radiation according to claim 1, characterized in that, S3 includes the following steps: S31: Calculate the transmitted light intensity based on the first signal; S32: The transmittance is calculated based on the transmitted light intensity and the calibrated light intensity; S33: Input the transmittance into a preset transmission method temperature measurement model to obtain the low temperature value.

4. The wafer temperature measurement method based on transmission and radiation according to claim 1, characterized in that, S4 includes the following steps: S41: Calculate the infrared radiation intensity based on the second signal; S42: Input the infrared radiation intensity into a preset radiation temperature measurement model to obtain the high temperature value.

5. The wafer temperature measurement method based on transmission and radiation according to claim 1, characterized in that, The first temperature threshold is 350°C, and the second temperature threshold is 400°C.

6. A wafer temperature measuring device based on transmission and radiation, characterized in that, It utilizes the wafer temperature measurement method based on transmission and radiation as described in any one of claims 1-5, comprising: The signal acquisition module is used to acquire the composite optical signal of the wafer; A segmentation module is used to divide the composite optical signal into a first signal and a second signal according to wavelength, wherein the wavelength of the first signal is smaller than the wavelength of the second signal; The transmission temperature measurement module is used to input the first signal into a preset transmission temperature measurement model to obtain a low temperature value; The radiation temperature measurement module is used to input the second signal into a preset radiation temperature measurement model to obtain a high temperature value; The temperature processing module is used to calculate the final temperature based on the low temperature value and the high temperature value.

7. An electronic device, characterized in that, include: One or more processors; Storage device for storing one or more computer programs; When the one or more computer programs are executed by the one or more processors, the one or more processors implement a wafer temperature measurement method based on transmission and radiation as described in any one of claims 1-5.

8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements a wafer temperature measurement method based on transmission and radiation as described in any one of claims 1-5.

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