Surface modification method using electron beam and ion beam in cooperation

Abstract

The application relates to the field of high-precision surface treatment technology, and particularly relates to a surface modification method based on cooperation of an electron beam and an ion beam, which comprises the following steps: positioning target particles adhered to a substrate; synchronously charging the target particles and an adhering surface thereof by using an electron beam, so as to generate like repulsion between the target particles and the adhering surface; and irradiating the charged target particles by using an ion beam at an incident angle of 60 DEG to 80 DEG with respect to the normal line of the substrate, so as to remove the target particles in a directional manner. In the ion beam polishing process, the low-energy irradiation of the electron beam and the ion beam is cooperated to remove the target particles adhered to the substrate in a directional manner, so that the complete removal of pollutants in material atomic-level modification is realized, the processing yield of atomic-level high-precision surface modification is improved, and the problem of failure of a high-precision system caused by residual target particles is avoided.

Description

Technical Field

[0001] This application relates to the field of high-precision surface treatment technology, and more specifically, to a surface shaping method that combines electron beam and ion beam. Background Technology

[0002] Ion beam polishing (IBF) is an ultra-precision machining technique that achieves atomic-level removal by irradiating the surface of a material with an accelerated ion beam. The ion beam removes material at the atomic level at the impact point, enabling ultra-precision machining and complete correction of surface defects.

[0003] Ion beam polishing is mainly used for high-precision optical components, semiconductor devices, and high-power lasers, such as extreme ultraviolet (EUV) mirrors, large-aperture telescope lenses, wafers, satellite mirrors, and high-power laser cavity mirrors. In particular, in EUV lithography mirrors and high-power lasers, individual target particles on the material surface can become a cause of localized overheating or optical damage, leading to the failure of precision systems composed of high-precision optical components, EUV mirrors, or large-aperture telescope lenses.

[0004] While ion beam polishing can meet the needs of atomic-level shaping in existing technologies, it is insufficient in removing higher-frequency errors and contaminants. For example, submicron target particles are prone to migration or deposition during ion beam polishing sputtering, leaving target particles or even "nodules" on the material surface, which will affect the yield or performance of the material in the final product. Summary of the Invention

[0005] This application addresses the shortcomings of existing methods by proposing a surface modification method that combines electron beam and ion beam techniques. This method aims to solve the technical problems of incomplete removal of target particles, easy migration, and redeposition in related technologies.

[0006] This application provides a surface shaping method that combines electron beam and ion beam techniques, including:

[0007] Positioning target particles attached to the substrate;

[0008] The target particle and its attachment surface are simultaneously energized using an electron beam to generate a repulsive force between them.

[0009] An ion beam is used to irradiate the charged target particles at an incident angle of 60° to 80° with respect to the normal of the substrate, thereby directionally removing the target particles.

[0010] Specifically, the main technical concept of this application lies in achieving the directional removal of target particles attached to the substrate through the synergistic effect of low-energy electron beams and ion beams during ion beam polishing. This enables the complete removal of contaminants in atomic-level material shaping, improving the processing yield of atomic-level high-precision surface shaping and avoiding high-precision system failures caused by target particle residue. Since the target particles' attachment state is primarily altered by low-energy electron beam irradiation, and the ion beam only irradiates the target particle layer for directional removal of target particles whose attachment state has been altered, the attachment of target particles can be completely removed without causing substrate damage. This approach is suitable for atomic-level surface shaping and solves the technical problem of target particles easily remaining during high-precision surface shaping.

[0011] Furthermore, an ion beam polishing operation is performed before or after the target particles are attached to the positioning substrate.

[0012] Specifically, another technical concept of this application is to provide a surface free of target particle contamination for ion beam polishing by treating the target particles before polishing, thereby avoiding the impact of target particle adhesion on the processing accuracy of ion beam polishing and achieving high-precision processing. Simultaneously, this application further cleans the deposited target particles sputtered during ion beam polishing by treating the target particles after polishing, preventing residues from affecting the final surface shaping result, thus further improving the precision of ion beam polishing and increasing the yield of products with improved shaping accuracy.

[0013] Optionally, the positioning, charging, and removal operations of the target particle can be repeated.

[0014] Specifically, another technical concept of this application is that after completing the positioning, charging and removal operation of the target particles, the target particles attached to the substrate will be repositioned by the detection system. When it is found that there are still target particles attached, the charging and removal operation will be repeated to solve the technical problem of target particle redeposition and migration, and to ensure the comprehensiveness and thoroughness of target particle removal.

[0015] Furthermore, the synchronous energization of the target particle and its attachment surface using an electron beam includes:

[0016] The interface between the target particle and the adhesion surface is irradiated by the electron beam in one or more directions;

[0017] Alternatively, the target particles can be vertically irradiated and completely covered by the electron beam.

[0018] Specifically, another technical concept of this application lies in further improving the electron beam irradiation method to enhance the efficiency and reliability of the electron beam in changing the attachment state of target particles. When the number of target particles is large or the particles are large, the charging efficiency can be improved by irradiating multiple target particles from multiple angles with multiple electron beams or by irradiating multiple target particles separately with multiple electron beams, thereby completing the change of the attachment state of the target particles instantaneously. When the target particles are small, the attachment state of the target particles can be rapidly changed by completely covering the irradiation. It is worth understanding that the interface irradiation method can induce secondary electron emission in the microcavity between the target particle and the interface, thereby achieving synchronous charging of the target particle and the attachment surface, which can avoid substrate damage caused by direct electron beam irradiation on the substrate. At the same time, the secondary emission of electrons in the microcavity can also quickly achieve charge accumulation between the target particle and the attachment surface, so that the two generate repulsion due to the same charge, thereby changing the "attached state" between the target particle and the substrate to a "weakly bound state" or "suspended state", which facilitates rapid purging of the ion beam at a larger irradiation angle.

[0019] Furthermore, the surface modification method using a combination of electron beam and ion beam provided in this application also includes:

[0020] The electron beam irradiates with initial energy and initial beam current;

[0021] Real-time detection of the adhesion surface;

[0022] When the adhesion surface does not undergo any of the changes such as melting, ablation, carbonization, or thermal deformation, the initial energy and initial beam current are gradually increased.

[0023] Specifically, another technical concept of this application lies in using a very small initial energy and initial beam current for charging, and simultaneously using structural state detection to ensure safe electron beam irradiation, avoiding irreversible damage to the substrate by the electron beam, and improving the reliability of this application. It is worth explaining that both electron beam and ion beam irradiation will bombard the substrate, thereby affecting its surface state. In order to treat the target particles without affecting the substrate surface state, this application uses low-energy electron beams and low-energy ion beams to achieve beam bombardment without damaging the substrate. The setting of the initial energy and initial beam current can prevent irreversible damage to the substrate from vertically irradiated electron beams.

[0024] Furthermore, the energy of the electron beam is configured to range from 50 eV to 200 eV, and the beam current is configured to range from 10 pA to 10 nA. This application achieves the charging operation of the target particle through extremely small energy and beam current, so as to achieve the purpose of charging only without changing the substrate state.

[0025] Optionally, the ion beam is simultaneously subjected to vacuum pumping during irradiation;

[0026] The direction of the vacuum pumping is the same as the direction of the ion beam irradiation.

[0027] Specifically, another technical concept of this application is to enhance the directional removal function of ion beam irradiation by vacuum pumping, thereby avoiding the technical problem of insufficient kinetic energy delivered by the low-energy ion beam to the target particles, which leads to their re-migration or redeposition, and improving the removal efficiency of the target particles.

[0028] Furthermore, the energy of the ion beam is configured to range from 0.5keV to 2keV, and the beam current is configured to range from 1mA to 50mA.

[0029] Specifically, another technical concept of this application lies in further limiting the energy and current of the ion beam to avoid irreversible damage to the substrate caused by the ion beam with high kinetic energy. It is worth explaining that although this application reduces the bombardment intensity of the ion beam on the substrate by using an incident angle of 60°–80°, the ion beam has greater kinetic energy than the electron beam. Therefore, this application further constrains the energy and current of the ion beam while limiting the incident angle to improve the reliability of this application.

[0030] In some alternative implementations, the electron beam, and / or the ion beam, is generated in a pulsed mode.

[0031] Specifically, this application uses pulsed electron beams and ion beams for intermittent operation, thereby avoiding heat accumulation on the substrate during the charging and removal of target particles and improving the reliability of this application.

[0032] Optionally, the pulse interval between the electron beam and ion beam provided in this application is 50ms to 100ms. This pulse interval avoids heat accumulation on the substrate by the electron beam and ion beam, thus improving the reliability of this application.

[0033] In some possible implementations, the substrate is disposed on a five-axis motion stage and a vacuum environment for accommodating the substrate is provided by a vacuum chamber;

[0034] The ion beam is generated by an ion source module;

[0035] The electron beam is generated by an electron beam module;

[0036] The target particle is located by a detection module;

[0037] The detection module can be integrated into the five-axis motion table or externally connected.

[0038] Specifically, another technical concept of this application lies in improving its applicability through modular design. Since this application has an ion source module for ion beam polishing, different ion beam energies for target particle removal and ion beam polishing can be generated through the control of the ion beam module. The electron beam module and detection module can be externally connected to the surface shaping method combining electron and ion beams provided in this application, thereby making this application applicable to the structural modification of existing ion beam polishing systems.

[0039] Optionally, the detection module is configured as an electron microscope;

[0040] The electron beam module functions through the microscope tube.

[0041] Specifically, another technical concept of this application is to improve the detection accuracy of target particles by using an electron microscope and its built-in microscope tube, thereby improving the removal accuracy of target particles in this application.

[0042] The beneficial technical effects of the technical solutions provided in this application include:

[0043] During surface reshaping, the target particles and the adhesion surface are simultaneously energized through the microcavity secondary charging effect of a low-energy electron beam. This transforms the target particles from an "attached state" to a "suspended state" or a "weakly bound state," allowing the ion beam with an incident angle of 60°–80° to remove them directionally. Since the target particles are now in a "suspended state" or "weakly bound state," and possess negative charge, the positively charged low-energy ion beam can easily purge them for targeted removal. Because the electron beam only energizes the target particles, the kinetic energy carried by the electrons is minimal and will not damage the substrate under short-term irradiation. In contrast, the ion beam, due to the alteration of the target particle's attachment state by the electron beam, can remove the target particles using a low-energy ion beam. Furthermore, the high incident angle of the ion beam further limits the kinetic energy bombardment of the substrate. Furthermore, since both electron and ion beams act on the target particles, high-precision removal of atomic-level target particles can be achieved without damaging them, thereby improving the processing yield of high-precision materials while ensuring structural reliability. Simultaneously, the target particles are deattached by the negative electrostatic repulsion generated by the electron beam, achieving effective removal. The ion beam, irradiated at a 60°-80° angle, provides directional removal, preventing re-migration or redeposition of the removed particles. This application offers the advantage of comprehensive target particle removal, thus improving removal efficiency. Therefore, this application is particularly suitable for applications such as surface cleaning or shaping of atomic-level high-precision optical materials.

[0044] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0045] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0046] Figure 1 A schematic flowchart illustrating a surface modification method using a combination of electron beam and ion beam, provided in an embodiment of this application;

[0047] Figure 2 This is a schematic diagram of electron beam irradiation provided in an embodiment of this application;

[0048] Figure 3 For this application Figure 2 Schematic diagram of the electron secondary emission principle during electron beam charging;

[0049] Figure 4 This is a schematic diagram of ion beam irradiation provided in one embodiment of this application. Detailed Implementation

[0050] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0051] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by this art. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."

[0052] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0053] First, let's introduce and explain several terms used in this application:

[0054] An electron beam is a stream of electrons that has been focused together. It has a high energy density and is mainly produced by the electron gun. Electrons generated at the cathode are accelerated to very high speeds by the accelerating electric field between the cathode and anode. After being focused by a lens, they form a dense, high-speed electron stream.

[0055] An ion beam is a group of ions moving at approximately the same speed in almost the same direction. It is generated by an ion source and accelerated by the electric field and focused by the magnetic field of a particle accelerator.

[0056] This application mainly relates to a surface shaping method that combines electron beam and ion beam, used for atomic-level high-precision material shaping. It achieves high-precision shaping of the substrate without damaging it, and has the beneficial effect of leaving virtually no target particles on the substrate surface.

[0057] The research and development approach of this application includes: utilizing the electron beam charging effect to make the target particles and the substrate simultaneously carry negative charges, and using the principle of like charges repelling each other to de-attach the target particles. In the case of target particle de-attachment, the removal operation is performed using an ion beam with a high incident angle. Since the target particles are de-attached via an electron beam, removal can be achieved without bombardment with a high-energy ion beam. Furthermore, the ion beam, through directional irradiation at a high incident angle, provides kinetic energy for the target particles to move along the reflection direction, achieving directional removal. This results in advantages such as non-destructive substrate surface removal, comprehensive target particle removal, and high removal efficiency.

[0058] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.

[0059] To illustrate the surface modification method using a combined electron beam and ion beam provided in this application, the structural composition of this application is described, including: a five-axis motion stage for positioning the substrate 3, and a vacuum chamber for housing the substrate 3 and providing a vacuum environment, wherein the vacuum chamber is connected to a vacuum pump for evacuation and vacuum discharge. This application also includes an electron source module 1, an ion beam module, and a detection module disposed on the five-axis motion stage. The electron source module 1 is used to generate an electron beam for operation, the ion source module 2 is used to generate an ion beam for operation, and the detection module is used to position the target particle 4.

[0060] Optionally, the detection module includes either an online detection component or an offline detection component. The online detection component can be integrated with a five-axis motion stage to improve the overall integrity of the surface shaping method provided in this application and increase detection accuracy. The offline detection component can be adapted to an existing five-axis motion stage via an interface, and can be used to structurally modify existing ion beam polishing systems, thereby improving the applicability of this application.

[0061] Optionally, the detection module includes one or more of wavefront detection, interference surface shape detection, or scattering detection.

[0062] Optionally, the detection module also includes the detection of target particle 4 by scanning electron microscopy, electron diffraction imaging or energy dispersive spectroscopy to improve the detection accuracy of target particle 4.

[0063] Optionally, the electron source module 1 can be any one of a low-energy electron gun, an electron neutralizer, or a microscope tube. Low-energy electron guns and electron neutralizers are easy to modify ion beam polishing systems and have low configuration costs, thus reducing the processing cost of the surface shaping method provided in this application. The microscope tube can integrate the electron source module 1 into the detection module, thereby achieving integration of the target particle 4 and electron beam generation, improving the accuracy of electron beam irradiation, and enabling the electron source module 1 to perform energy charging operations on smaller target particles 4, improving the removal accuracy of the target particles 4. Furthermore, the microscope tube has a wider energy adjustment range and controllable beam spot size, enabling precise positioning of the target particle 4.

[0064] Optionally, the energy range of the electron beam is configured to be 50 eV to 200 eV, and the beam current range is configured to be 10 pA to 10 nA. Specifically, this application limits the energy and beam current of the electron beam to maintain it at extremely low energy, thereby achieving electron charging and improving the reliability of electron beam irradiation. It is understood that eV refers to electron volt, a unit of energy representing one electron (with a charge of 1.6 × 10⁻⁶). -19 The kinetic energy gained by the negative charge of C after being accelerated by a potential difference of 1 volt. That is, the corresponding beam voltage of the electron beam ranges from 50V to 200V. Therefore, this application controls the energy of the electron beam to keep it at an extremely small level, so that it is mainly used to charge the target particles and avoids introducing minute stress into the substrate.

[0065] Optionally, the energy of the electron beam is determined based on the bonding strength between the target particle 4 and the substrate 3. If the bonding strength between the target particle 4 and the substrate 3 is weak, a smaller energy or beam current can be used for the electron beam; conversely, a larger energy and beam current are required. It is understood that the bonding strength between the target particle 4 and the substrate 3 depends on the chemical bonding strength between the target particle 4 and the substrate 3, as well as the mass and size of the target particle 4.

[0066] Optionally, this application sets the initial energy and initial beam current of the electron beam based on the size of the target particle 4. It is understood that this application may also set the initial energy and initial beam current based on the chemical bonding strength or mass of the target particle 4. Comparatively, the size of the target particle 4 is easier to observe using an electron microscope module, while the chemical bonding strength of the target particle 4 needs to be detected using probes or other means, requiring additional functional components.

[0067] Optionally, the ion source module 2 includes ion beam irradiation and ion beam polishing functions.

[0068] Optionally, the ion source module 2 includes any one of a Kaufman ion source, a radio frequency ion source, or a Hall ion source.

[0069] Optionally, the working gas of the ion source module 2 includes any one of Ar, O2, N2, Xe, or a mixture thereof.

[0070] Optionally, during ion beam irradiation, the energy of the ion beam is configured to range from 0.5 keV to 2 keV, and the beam current is configured to range from 1 mA to 50 mA. Since the ion beam has greater kinetic energy than the electron beam, this application further limits the energy and beam current of the ion beam to avoid bombarding the substrate 3 and improve the reliability of ion beam purging of the target particles 4. It is worth noting that the initial values ​​of the ion beam energy and beam current can be understood with reference to the initial values ​​of the electron beam energy and beam current. The beam pressure of the ion beam can be determined based on the energy and the working gas.

[0071] Further, please refer to Figure 1 This is a schematic flowchart of a surface modification method using a combination of electron beam and ion beam, provided as an embodiment of this application.

[0072] Specifically, based on the descriptions of the above modules, the working principle of this application is as follows: First, the target particles 4 attached to the substrate 3 are located using a detection module. The substrate 3 refers to the material undergoing surface modification, and the target particles 4 refer to nodular particles, sputtered contaminants, micron-sized attached particles, and particles that migrate or redeposit during processing. After the target particles 4 are located, an electron beam is used to simultaneously charge the target particles 4 and their attachment surfaces, thereby generating a repulsive force between them. Since the electron beam forms a negatively charged electron flow, electron injection can be performed on the target particles 4 and their attachment surfaces, making them negatively charged. This causes the target particles 4 to be repelled by the substrate 3, and the generation of this repulsive force achieves a change in the attachment state of the target particles 4. After the target particles 4 change from an attached state to a suspended or weakly bound state, they can be irradiated with an ion beam at a high incident angle to remove them directionally. It is worth explaining that, because the energy of the electron beam is relatively low, it is mainly used only for charging the target particles 4, and will not introduce micro-stress into the substrate 3, making process control more reliable. The ion beam is used only to bombard the target particles 4 in a suspended or weakly bound state. Therefore, the power of the electron beam and ion beam working together can be significantly reduced, which can achieve directional cleaning of the target particles 4 and avoid damage to the structure of the substrate 3, thus ensuring the reliability of this application.

[0073] Optionally, after completing the removal of target particle 4, the target particle 4 of the substrate 3 can be detected again. If target particle 4 remains, the removal of target particle 4 can be performed again.

[0074] Alternatively, electron beams and ion beams can be used in conjunction for routine cleaning of optical materials.

[0075] Optionally, electron beam and ion beam are used in conjunction in the ion beam polishing process. Specifically, this application can perform pre-process cleaning of the target particles 4 before ion beam polishing to prevent the adhered target particles 4 from affecting the processing accuracy of the ion beam polishing. Alternatively, this application can perform post-process cleaning of the target particles 4 after ion beam polishing to treat the redeposited particles generated during ion beam polishing, thereby correcting the mid-frequency error of the substrate 3.

[0076] Optionally, ion beam polishing includes: obtaining the surface shape error distribution of the substrate 3 and setting polishing parameters; obtaining the polishing parameters and correction amounts through a convolution model; and controlling the ion beam to polish the substrate 3 according to the polishing parameters and correction amounts. It is worth understanding that ion beam polishing refers to an ultra-precision machining technology that achieves atomic-level removal by bombarding the material surface with an accelerated ion beam. That is, all existing ion beam polishing methods can be applied to the ion beam polishing of this application. In other words, the above only provides one method for ion beam polishing and is not intended to limit the ion beam polishing technology used in this application.

[0077] Further, please refer to Figure 2 This is a schematic diagram illustrating electron beam irradiation according to an embodiment of this application. The electron beam and ion beam irradiate in stages. After the target particle 4 is positioned, it can be energized by the electron beam. This application demonstrates the electron beam energizing process using vertical irradiation. The electron source module 1 is positioned above the substrate 3 to generate the electron beam that irradiates the target particle 4 below.

[0078] Optionally, this application can irradiate the interface between the target particle 4 and the attachment surface with an electron beam from one or more directions; or, the target particle 4 can be completely covered by vertical electron beam irradiation. The electron source module 1 can be configured as a low-energy electron gun or an electron neutralizer, thereby achieving irradiation of a wide range of target particles 4. That is, in addition to irradiating the target particle 4 individually, the electron source module 1 can also improve the energy charging efficiency of the target particle 4 through range irradiation. Of course, the electron source module 1 can also be configured as a microscope tube, allowing for the individual irradiation of target particles 4 of different sizes by adjusting the electron beam spot, energy, and beam current, thereby achieving precise energy charging of the target particles 4 while ensuring both charging accuracy and reliability. Furthermore, multiple electron source modules 1 can be configured, allowing multiple electron beams to work simultaneously, thereby improving the energy charging efficiency of the target particles 4.

[0079] Further, please refer to Figure 3 For this application Figure 2 A schematic diagram illustrating the principle of secondary electron emission during the electron beam charging process.

[0080] Specifically, during the charging process, the electron beam emits electrons a second time through the micro-cavity formed between the target particle 4 and its attachment surface. That is, when electrons irradiate the micro-cavity between the target particle 4 and the attachment surface, they are emitted a second time in both directions, thus simultaneously energizing the bottom of the target particle 4 and the upper part of the attachment surface. This results in both the target particle 4 and the attachment surface becoming negatively charged, causing the attachment surface to generate a repulsive force F that repels the target particle 4. Under the action of this repulsive force F, the attachment state of the target particle 4 to the substrate 3 is changed, specifically from an attached state to a suspended state or a weakly bound state. This reduces the bombardment energy required for the subsequent removal by ion beam bombardment, thereby achieving the removal of the target particle 4 with low kinetic energy.

[0081] Optionally, the electron beam charging process also includes: irradiating the target particle 4 with initial energy and initial beam current; real-time monitoring of the adhesion surface; and gradually increasing the initial energy and initial beam current when no changes such as melting, ablation, carbonization, or thermal deformation occur on the adhesion surface. Although the electron beam is only used to charge the target particle 4 in this application, its vertical irradiation inevitably leads to heat accumulation in the substrate 3. If the irradiation time is too long, it will still inevitably cause negative effects such as melting, ablation, carbonization, or thermal deformation on the adhesion surface. Therefore, this application first irradiates the target particle 4 with initial energy and initial beam current, which are the minimum allowable energy and beam current for the electron beam to generate, so that the kinetic energy carried by the electron beam is as small as possible. By real-time monitoring, the initial energy and initial beam current are gradually increased to ensure that the electron beam only charges the target particle 4 without causing irreversible bombardment damage to the adhesion surface.

[0082] Optionally, the detection of melting, ablation, carbonization, or thermal deformation of the adhesion surface includes: acquiring the surface morphology of the adhesion surface through an electron scanning mirror during electron beam irradiation, and determining whether the adhesion surface has a negative impact based on the surface morphology.

[0083] Further, please refer to Figure 4 This is a schematic diagram of ion beam irradiation provided in one embodiment of this application.

[0084] Specifically, after the target particle 4 completes its attachment state transition, the electron source module 1 stops working, and the ion beam generated by the ion source module 2 removes the target particle 4. Since the bonding force between the target particle 4 and the attachment surface is essentially canceled out by the repulsive force, this application can reduce the removal kinetic energy of the ion beam. Considering that the starting kinetic energy of the ion beam and the kinetic energy it carries are greater than that of the electron beam, the ion beam is irradiated at a high incident angle to avoid the accumulation of kinetic energy or heat caused by small angles, ensuring that only the target particle 4 is removed without adversely affecting the underlying substrate 3. The angle between the ion beam and the normal to the substrate 3 is α (please refer to...). Figure 4 (The angle is indicated by α), 60°≤α≤80°. Experiments show that if the ion beam incident angle is too large (above 80°), it is difficult to balance the ion beam energy and the bombardment energy of the beam, leading to uncontrollable kinetic energy injection. Conversely, if the ion beam incident angle is too small (below 60°), it easily leads to heat accumulation on the substrate 3. Furthermore, as the incident angle decreases, the distance the ion beam carries the target particle 4 in a directional manner decreases, easily causing redeposition and re-migration of the target particle 4. Therefore, 60°≤α≤80° effectively controls the energy input of the ion beam while ensuring the directional movement distance of the target particle 4, balancing irradiation safety and complete removal of the target particle 4. It is understood that the electron beam and ion beam operate sequentially; that is, the ion beam begins operation after the electron beam finishes, avoiding mutual interference between the two types of particles and improving the reliability of this application.

[0085] Optionally, the vacuum extraction direction is the same as the ion beam irradiation direction, that is, the vacuum extraction point is located in the ion beam emission direction (the direction away from the ion source), used to extract the target particles 4 after ion beam bombardment, thereby increasing the migration distance of the target particles 4 and preventing redeposition of the target particles 4 on the substrate. It is understood that although the ion beam provides kinetic energy to the target particles 4 in the emission direction, to further increase the migration distance of the target particles 4, vacuum extraction enhances the migration distance of the target particles 4 brought about by ion beam irradiation, thus effectively preventing redeposition of the target particles 4. It is understood that vacuum extraction and ion beam irradiation are performed simultaneously. That is, after electron beam irradiation is stopped, ion beam irradiation and vacuum extraction are simultaneously turned on, and then ion beam irradiation and vacuum extraction are simultaneously turned off.

[0086] Optionally, both the electron source module 1 and the ion beam module of this application adopt pulse mode. Pulse mode refers to dividing the originally continuous or quasi-continuous electron beam and ion beam into alternating on-off or high-low kinetic energy electron beam and ion beam by time intervals, so as to avoid heat accumulation on the substrate 3 and thus ensure the reliability of the electron beam and ion beam operation.

[0087] Optionally, the pulse interval is 50ms to 100ms.

[0088] In summary, this application provides a surface reshaping method using a combination of electron and ion beams. First, a detection module locates target particles 4 attached to a substrate 3. After locating the target particles 4, an electron beam synchronously energizes both the target particles 4 and their attachment surface, altering the attachment state of the target particles 4 through the repulsive force between the substrate 3 and the target particles 4. Once the target particles 4 transition from an attached state to a suspended or weakly bound state, they can be irradiated with an ion beam at a high incident angle, causing their directional removal. It is worth noting that since the electron beam is only used to energize the target particles 4, and the ion beam is only used to bombard the suspended or weakly bound target particles 4, the power required for the combined electron and ion beam operation can be significantly reduced. This achieves directional cleaning of the target particles 4 while avoiding excessive kinetic energy bombardment that could damage the substrate 3 structure. Furthermore, since both the electron and ion beams primarily act on the target particles 4 and not directly on the substrate, the reliability of the combined electron and ion beam surface reshaping method can be further improved.

[0089] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in related technologies that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0090] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0091] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0092] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0093] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0094] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A surface modification method using a combination of electron beam and ion beam, characterized in that, include: Positioning target particles attached to the substrate; The target particle and its attachment surface are simultaneously energized using an electron beam to generate a repulsive force between them. An ion beam is used to irradiate the charged target particles at an incident angle of 60° to 80° with respect to the normal of the substrate, thereby removing the target particles in a directional manner. An ion beam polishing operation is performed before or after the target particles are attached to the positioning substrate; Simultaneous energization of the target particles and their attachment surfaces using an electron beam includes: The interface between the target particle and the adhesion surface is irradiated by the electron beam in one or more directions; Alternatively, the target particles can be vertically irradiated and completely covered by the electron beam; The target particles are submicron particles; The ion beam is used to purge the target particles, reducing the bombardment force on the adhesion surface; The ion beam is simultaneously subjected to vacuum extraction during irradiation.

2. The surface shaping method using a combination of electron beam and ion beam as described in claim 1, characterized in that, Also includes: The electron beam irradiates with initial energy and initial beam current; Real-time detection of the adhesion surface; When the adhesion surface does not undergo any of the changes such as melting, ablation, carbonization, or thermal deformation, the initial energy and initial beam current are gradually increased.

3. The surface shaping method using a combination of electron beam and ion beam as described in claim 2, characterized in that, The energy of the electron beam is configured to range from 50 eV to 200 eV, and the beam current is configured to range from 10 pA to 10 nA.

4. The surface shaping method using a combination of electron beam and ion beam as described in claim 1, characterized in that, The direction of the vacuum pumping is the same as the direction of the ion beam irradiation.

5. The surface shaping method using a combination of electron beam and ion beam as described in claim 4, characterized in that, The energy of the ion beam is configured to range from 0.5 keV to 2 keV, and the beam current is configured to range from 1 mA to 50 mA.

6. The surface shaping method using a combination of electron beam and ion beam as described in claim 1, characterized in that, The electron beam, and / or the ion beam, is generated in a pulsed mode.

7. The surface shaping method using a combination of electron beam and ion beam as described in claim 1, characterized in that, The substrate is mounted on a five-axis motion stage and a vacuum environment is provided to house the substrate through a vacuum chamber; The ion beam is generated by an ion source module; The electron beam is generated by an electron beam module; The target particle is located by a detection module; The detection module can be integrated into the five-axis motion table or externally connected.

8. The surface shaping method using a combination of electron beam and ion beam as described in claim 7, characterized in that, The detection module is configured as an electron microscope; The electron beam module functions through the microscope tube.

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