Multi-temperature reactor system and method

Abstract

Reactor systems and methods for rapidly adjusting substrate temperature are disclosed. An exemplary reactor system may include one or more temperature regulating gas sources coupled to a reaction chamber of a reactor. Additionally or alternatively, an exemplary reactor system may include a lift pin assembly that may move a substrate away from a susceptor surface during processing.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to apparatuses for use in vapor phase processes. More particularly, the present disclosure relates to reactor systems capable of rapidly changing substrate temperature during processing and methods of use thereof. BACKGROUND

[0002] Vapor phase processes, such as chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), and the like, are commonly used to deposit material onto a surface of a substrate, etch material from a surface of a substrate, and / or clean or treat a surface of a substrate. For example, vapor phase processes can be used to deposit or etch layers on a substrate to form semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), and the like.

[0003] Reactors used in vapor phase processing typically include a susceptor to hold a substrate in place and to heat or cool the substrate during processing. The susceptor is typically configured to heat (or cool) the substrate to a temperature within a particular range.

[0004] In some cases, it can be desirable to expose a substrate within a reactor to two or more different process steps at substantially different temperatures. For example, it can be desirable to deposit a material at one temperature and to anneal or densify the material at another temperature. Additionally or alternatively, it can be desirable to adsorb a precursor on a surface of a substrate at a first temperature and to react the adsorbed precursor with a reactant at a second temperature. For some reactor systems, it can take an undesirable amount of time to heat and / or cool the susceptor from one processing temperature to another processing temperature.

[0005] Accordingly, there is a need for improved reactor systems that can be used to process substrates at different temperatures and that are capable of rapidly changing substrate temperature.

[0006] Any discussion of problems and solutions in this section merely provides the Court with information to help decipher the purposes of the disclosure; it is not an admission that any or all of the discussion was known or used 100 prior to the inventive efforts disclosed herein. SUMMARY

[0007] Various embodiments of the present disclosure provide reactor systems and methods for processing substrates that allow for or include rapid changes in substrate temperature. The reactor systems and methods described herein are suitable for use in a variety of vapor phase processes, such as chemical vapor deposition processes (including plasma enhanced chemical vapor deposition processes), vapor phase etching processes (including plasma enhanced vapor phase etching processes), vapor phase cleaning processes (including plasma enhanced cleaning processes), and vapor phase treatment processes (including plasma enhanced vapor phase treatment processes). As set forth in greater detail below, the exemplary reactor systems and methods are particularly suitable for use in processes that include multiple deposition steps and / or desirably operate at multiple temperatures within a reaction chamber.

[0008] According to various embodiments of the present disclosure, a reactor system includes a reactor including a chamber defined in part by a chamber wall, a pedestal configured to hold a substrate during processing, a temperature-adjusting gas source coupled to the reaction chamber via a conduit, the temperature-adjusting gas source including a temperature-adjusting gas, and a gas temperature-adjusting device configured to increase and / or decrease the temperature of the temperature-adjusting gas. According to examples of these embodiments, the conduit is configured to provide the temperature-adjusting gas proximate to the pedestal. In some cases, the temperature-adjusting gas can be provided above the substrate— e.g., when the substrate is within a lower chamber of the reactor or by passing through a designated passage of a gas distribution device. In some cases, the temperature-adjusting gas can be provided below the substrate— e.g., the temperature-adjusting gas can be directed toward a backside of the pedestal. In some cases, the conduit passes through the chamber wall. In some cases, the conduit includes a portion of a gas distribution device. In some cases, the gas temperature-adjusting device is within the reactor— e.g., within a lower chamber of the reactor. In some cases, the gas temperature-adjusting device is external to the reactor. The gas temperature-adjusting device can be or include, for example, one or more of: a microwave plasma device, a radiant heater, an infrared heater, a flash lamp, a compressor, etc.

[0009] According to further example embodiments of the present disclosure, a deposition method includes placing a substrate on a surface of a pedestal, heating the substrate to a first temperature using a first heater, and moving the substrate to a raised position using one or more lift pins and heating the substrate in the raised position to a second temperature different from the first position, wherein the temperature of the substrate is adjusted during the deposition method. According to examples of these embodiments, the first temperature is greater than the second temperature. In other cases, the second temperature is greater than the first temperature. In some cases, the substrate can be moved during a deposition cycle— e.g., the method can include exposing the substrate to a reactant while the substrate is on the surface of the pedestal and / or exposing the substrate to a precursor while the substrate is in the raised position. In some cases, a material can be deposited at the first temperature, and the deposited material can be processed— e.g., annealed or densified— at the second temperature. In such cases, the deposition and processing steps can be repeated. In some cases, the method steps can be repeated to fill a feature on a surface of the substrate, e.g., a gap.

[0010] According to further example embodiments of the disclosure, a method of adjusting a temperature of a substrate within a reactor includes placing a substrate on a surface of a pedestal; using a first heater, heating the substrate in a first position to a first temperature; and using an inert gas plasma source, heating the substrate in a second position to a second temperature. In some cases, the first position and the second position are within different reaction chambers of a module. In other cases, the first position and the second position are within the same reaction chamber. According to examples of the disclosure, the substrate is grounded in the first position and the second position. In such cases, the pedestal can be coupled to a first ground plane in the first position, and the ground plane supporting the substrate provides a second ground plane in the second position. The inert gas plasma source can be or include a microwave plasma source and / or an RF plasma source. In some cases, the method includes performing an anneal process while the substrate is in the second position.

[0011] According to further example embodiments of the disclosure, a reactor system includes a reactor including an upper chamber region and a lower chamber region; a pedestal configured to hold a substrate during processing, the pedestal including a top surface that partially defines the upper chamber region (e.g., when the pedestal is in a processing position); and a heater disposed in the lower chamber region and separate from the pedestal. The reactor system can additionally include a gas curtain between the upper chamber region and the lower chamber region or a portion thereof. Additionally or alternatively, the reactor system can include a baffle between the upper chamber region and the lower chamber region or a portion thereof.

[0012] The foregoing summary, as well as the following detailed description of the examples, are better understood when read in conjunction with the appended drawings. BRIEF DESCRIPTION OF DRAWINGS

[0013] A more complete understanding of the example embodiments of the present disclosure will be available by referring to the following detailed description and claims in conjunction with the accompanying drawings, in which:

[0014] Figure 1 A reactor system according to various embodiments of the disclosure is shown.

[0015] Figure 2 and Figure 3 Another reactor system according to example embodiments of the disclosure is shown.

[0016] Figure 4 and Figure 5 Another reactor system according to example embodiments of the disclosure is shown.

[0017] Figure 6 Yet another reactor system according to further example embodiments of the disclosure is shown.

[0018] Figure 7Another reactor system according to further example embodiments of the present disclosure is shown.

[0019] Figure 8 Yet another reactor system according to further example embodiments of the present disclosure is shown.

[0020] Figure 9 An example processing system according to various embodiments of the present disclosure is shown.

[0021] Figure 10 An example processing module of a processing system according to various embodiments of the present disclosure is shown.

[0022] It is to be understood that the elements in the figures are shown for the purpose of simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures can be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0023] The following description of example embodiments provided is merely exemplifying and is intended to illustrate only; the description is not intended to limit the scope of the disclosure or claims in any way. Furthermore, the description of multiple embodiments having the described features is not intended to exclude other embodiments having the described features or other embodiments having different combinations of the described features.

[0024] As set forth in greater detail below, various embodiments of the present disclosure relate to reactor systems, components thereof, and methods of using the reactor systems and components that allow for rapid heating and / or cooling of a substrate, which allows for processing (e.g., depositing a material on a substrate, cleaning a substrate surface, heating or annealing a material on a substrate surface, processing a substrate surface, etc.) at a temperature differential of greater than 5°C or 100°C in less than 10 or about 30 seconds or between about 1 and about 10 seconds or between about 1 second and 30 seconds or between about 25°C and about 150°C, for example.

[0025] As used herein, the term substrate can refer to any one or more underlying materials, including one or more layers and / or on which one or more layers can be deposited. A substrate can include a bulk material, such as silicon (e.g., single crystal silicon), other Group IV materials (e.g., germanium), or compound semiconductor materials (e.g., GaAs), and can include one or more layers overlying or underlying the bulk material. For example, a substrate can include a patterned stack of several layers overlying the bulk material. The patterned stack can vary depending on the application. In addition, a substrate can additionally or alternatively include various features, such as recesses, lines, etc., formed within or on at least a portion of the layers of the substrate.

[0026] In some embodiments, the term film refers to a layer that extends in a direction perpendicular to a thickness direction. In some embodiments, layer refers to a synonym for a material or film or non-film structure formed on a surface with a certain thickness. A film or layer can be composed of a discrete single film or layer or multiple films or layers with certain properties, and the boundary between adjacent films or layers can or can not be clear, and can or can not be established based on the physical, chemical, and / or any other properties, formation process or sequence, and / or function or purpose of the adjacent films or layers. Further, a layer or film can be continuous or discontinuous.

[0027] In the present disclosure, the term gas can refer to a material that is a gas at normal temperature and pressure, an evaporated solid, and / or an evaporated liquid, and can be composed of a single gas or a mixture of gases, depending on the context. A gas other than a process gas (i.e., a gas that is not introduced through a gas distribution device such as a showerhead, other gas distribution device, etc.) can be used, for example, to seal a reaction space, and can include a seal gas such as a noble gas.

[0028] In some cases, such as in the context of material deposition, the term precursor can refer to a compound that participates in a chemical reaction to produce another compound, and in particular to a compound that makes up the main backbone of a film matrix or film, while the term reactant can refer to a compound that, in some cases, is different from a precursor, which activates, modifies, or catalyzes the reaction of a precursor. In some cases, the terms precursor and reactant can be used interchangeably. The term inert gas refers to a gas that does not participate in a chemical reaction to a perceptible extent and / or a gas that excites a precursor when, for example, RF or microwave power is applied, but unlike a reactant, it can not become part of the film matrix to a perceptible extent.

[0029] The term cyclic deposition process or cyclic nature deposition process can refer to the sequential introduction of a precursor (and / or reactant) into a reaction chamber to deposit a layer on a substrate, and includes processing techniques such as atomic layer deposition (ALD), cyclic chemical vapor deposition (cyclic CVD), and hybrid cyclic deposition processes that include an ALD component and a cyclic CVD component. In some cases, an inert gas and / or one or more reactants can flow continuously during multiple cycles of a cyclic process, and a precursor and / or plasma can be pulsed.

[0030] In the present disclosure, any two numbers of a variable can constitute a working range of the variable, and any range indicated can include or exclude the endpoints. Additionally, any value of a variable indicated, whether or not it is indicated with an approximation, can refer to an exact or an approximate value and include equivalents, and in some embodiments can refer to an average value, a median value, a representative value, a majority value, etc. For example, the term approximately can refer to + / - 20%, 10%, 5%, 2%, or 1% of a value. Furthermore, in the present disclosure, the terms “comprising,” “consisting of,” and “having” can each, independently, refer to “generally includes or widens,” “includes,” “consists essentially of,” or “consists of” in some embodiments. The ordinary and customary meaning of the term does not necessarily exclude the ordinary and customary meaning of the term according to aspects of the present disclosure.

[0031] Turning now to the drawings, Figure 1 A reactor system (sometimes referred to herein as a processing system) 100 according to embodiments of the present disclosure is shown. The reactor system 100 includes a reactor 102, a pedestal 104, a temperature-regulated gas source 106, a temperature-regulated gas 108 within the temperature-regulated gas source 106, and a conduit 110. In the illustrated example, the reactor system 100 also includes a gas distribution device 112, lift pins 114, 116, a flow control ring 118, a vacuum source 156, and a controller 158. Although not shown, the reactor system 100 can additionally include one or more reactants and / or direct and / or remote plasma and / or thermal excitation equipment within the reactor 102.

[0032] The reactor 102 can be or include a reaction chamber suitable for vapor phase reactions. The reactor 102 can be formed of a suitable material, such as quartz, metal, etc., and can be configured to hold one or more substrates for processing. The reactor system 100 can include any suitable number of reactors 102, and can optionally include one or more substrate handling systems.

[0033] The reactor 102 can be used to deposit material onto a surface of a substrate 132, etch material from a surface of a substrate 132, clean a surface of a substrate 132, process a surface of a substrate 132, deposit material onto a surface within the reactor 102, clean a surface within the reactor 102, etch a surface within the reactor 102, and / or process a surface within the reactor 102. The reactor 102 can be a standalone reactor or part of a cluster tool. Further, the reactor 102 can be dedicated to a deposition, etching, cleaning, or processing process, or the reactor 102 can be used for multiple processes— e.g., any combination of deposition, etching, cleaning, and processing processes.

[0034] The reactor 102 can be configured as a CVD reactor, a cyclic deposition process reactor (e.g., a cyclic CVD reactor), an ALD reactor, etc., any of which can include a plasma apparatus, such as a direct and / or remote plasma apparatus. The reactor 102 can be configured to deposit various films or layers, such as multi-component layers, epitaxial layers, etc., and / or can be configured to perform etching and / or cleaning processes.

[0035] As shown, the reactor 102 includes a chamber 120 defined in part by a chamber wall 122. The chamber wall 122 can include a gate valve opening 124 and a conduit opening 126. The chamber 120 can be divided into an upper chamber region or processing region 128 and a lower chamber region or load / unload region 130. During processing, the substrate 132 can be at a first temperature when a top surface of the substrate 132 is within or partially defines the upper chamber region 128 (first position), and the substrate 132 can be at a second temperature when the substrate 132 is within the lower chamber region 130 (second position). In some cases, the lower chamber region is below the top surface 105 of the susceptor 104 when the susceptor 104 is in the processing position. In some cases, the second position can be below the gate valve opening 124.

[0036] The susceptor 104 is configured to hold the substrate 132 in place during processing. One or more segments of the susceptor 104 can be heated, cooled, or at an ambient processing temperature during processing. According to examples of the present disclosure, the susceptor 104 includes a temperature regulation device 134, such as a heater (e.g., an electrical resistance heater) and / or a cooling device (e.g., a conduit for a cooling medium such as chilled water).

[0037] In the example shown, the reactor system 100 includes a mechanism 136 to move the susceptor 104 from the lower chamber region 130 to the upper chamber region 128. The mechanism 136 can include any suitable apparatus capable of moving the susceptor 104 relative to a bottom chamber wall 138. By way of example, the mechanism 136 includes a servo motor to drive the susceptor 104 along a vertical axis. The mechanism 136 can be suitably located outside of the reaction chamber 102.

[0038] The susceptor 104 can be formed of any suitable material, such as a ceramic material, such as boron nitride, aluminum nitride, quartz, and a ceramic-coated material, such as a ceramic-coated metal. The susceptor 104 can also include a resistive heating material. Exemplary materials suitable for a resistive heating material include tungsten (W), nickel-chromium alloy (NiCr), cupronickel (CuNi), graphite, molybdenum disilicide (MoSi2), or any other suitable heater material. The resistive heating material can be coated (e.g., patterned) onto, for example, a ceramic or a ceramic-coated metal. The susceptor 104 can include an additional protective layer formed to cover the resistive heating material. The protective layer can be formed of, for example, a ceramic material.

[0039] A temperature-regulated gas source 106 is coupled to the chamber 120 (e.g., the lower chamber region 130) via a conduit 110. The temperature-regulated gas source 106 includes a temperature-regulated gas 108. The temperature-regulated gas 108 can be or include a relatively high thermal conductivity gas, such as a gas having a thermal conductivity greater than that of hydrogen or helium at an operating pressure and temperature, or a gas having a thermal conductivity greater than about 125 mW / m-K (milliwatts per meter Kelvin) at 100 kPa or a saturation pressure (if it is less than 100 kPa at 300 K). For example, the temperature-regulated gas 108 can be or include one or more of hydrogen, helium, or any mixture thereof, and can additionally include argon. Although shown as a single gas source, the temperature-regulated gas source 106 can include two or more gas sources, with the respective temperature-regulated gases being provided separately to the chamber 120, or mixed prior to the chamber 120 or within the chamber 120.

[0040] The temperature-regulated gas source 106 is fluidly coupled to a gas temperature regulation device 140 configured to increase and / or decrease the temperature of the temperature-regulated gas 108. As shown, the temperature regulation device 140 can be external to the chamber 120. Additionally or alternatively, the temperature regulation device 140 can be within the chamber 120 (e.g., within the lower chamber region 130), as described in more detail below in connection with other illustrated examples of reactor systems. The temperature regulation device 140 can be or include, for example, a heat exchanger, an electrical resistance heater, a cooler, a microwave plasma device, a radiant heater, an infrared heater, a flash lamp, a compressor, etc.

[0041] As shown, the temperature-regulated gas 108 is provided to the chamber 120 via the conduit 110, which can include one or more valves 142, 144. The valves 142, 144 can be on / off and / or control valves. According to examples of the present disclosure, at least one of the valves 142, 144 is a control valve coupled to a controller (such as the controller 158 described below) such that the flow of the temperature-regulated gas 108 is controlled during processing of the substrate 132. The conduit 110 and the reactor system 100 can be further configured to provide the temperature-regulated gas 108 in the vicinity of the substrate 132— e.g., within the lower chamber region 130. In Figure 1 In the illustrated example, the temperature-regulated gas 108 is not provided through the gas distribution device 112. In other examples described below, the temperature-regulated gas 108 is additionally or alternatively introduced through the gas distribution device 112. In Figure 1In the illustrated example, the conduit 110 includes a section 127 that passes through the chamber wall 122 and into the lower chamber region 130. The conduit 110 can also include a section 127 that extends within the lower chamber region 130 (e.g., substantially across the cross-sectional dimension of the lower chamber region 130). The conduit 110 can be formed of any suitable material, such as a stainless steel tube or the like. The insulator 160 can surround at least a portion of the conduit 110. Further, the conduit 110 can include one or more holes 129 to facilitate the provision of the temperature regulating gas 108 to the surface of the substrate. By providing the temperature regulating gas 108 through the chamber wall 122, the temperature of fewer components (such as the gas distribution device 112 or the like) is affected.

[0042] The gas distribution device 112 is configured to receive one or more gases during substrate processing and facilitate the distribution of the one or more gases to the reactor 102, and in particular, to the upper chamber region 128. The gas distribution device 112 can include an inlet 146 and a plurality of holes 148 coupled to a plenum 150.

[0043] The reactor system 100 can also include an exhaust path 152 and / or 154 to a vacuum source 156. The vacuum source 156 can include one or more vacuum sources. Exemplary vacuum sources include one or more dry vacuum pumps and / or one or more turbo molecular pumps.

[0044] The controller 158 can be configured to perform various functions and / or steps as described herein. The controller 158 can include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although illustrated as a single unit, the controller 158 can instead include multiple devices. For example, the controller 158 can be used to control the gas flow of the temperature regulating gas 108— e.g., via one or more of the valves 142, 144, and to move the susceptor between a first position in which the substrate is within the upper chamber region 128 and in contact with the surface of the susceptor 104 and a second position in which the substrate is within the lower chamber region 130 and elevated relative to the surface of the susceptor 104 (e.g., not in contact with the surface of the susceptor 104).

[0045] For example, a method of operating the reactor system 100 can include placing a substrate on a surface of a susceptor, heating or cooling the substrate to a first temperature using a first heater or cooler (e.g., the temperature regulating device 134), moving the substrate to a raised position using one or more lift pins, and heating the substrate in the raised position to a second temperature different from the first position, wherein the temperature of the substrate is regulated within the lower chamber region 130.

[0046] Figure 2Another reactor system 200 according to further examples of the present disclosure is shown. The reactor system 200 is similar to the reactor system 100, except that the reactor system 200 includes a reactor 202 that includes a reactor wall 222, a gas distribution device 212, one or more temperature-adjusted gas sources 232, 234 fluidly coupled to the upper chamber region 228 and isolatable from the lower chamber region 230, such that most of the temperature-adjusted gas 236, 238 from the one or more temperature-adjusted gas sources 232, 234 is exhausted through an exhaust path 252 within the upper plate or ceiling 233. The temperature-adjusted gas 236, 238 can be the same as or similar to the temperature-adjusted gas 108 described above. The temperature-adjusted gases 236 and 238 include the same or different gases. The temperature-adjusted gases 236 and 238 are suitably controlled at different temperatures.

[0047] The reactor system 200 can also include gas temperature-adjusting devices 240, 242, which can be the same as or similar to the gas temperature-adjusting devices 140. Similarly, the reactor system 200 can include valves 244-250, which can be the same as or similar to the valves 142, 144.

[0048] According to examples of the present disclosure, the temperature-adjusted gas source 232 can provide a relatively cool gas to the upper chamber region 128, and the temperature-adjusted gas source 234 can provide a relatively hot gas to the upper chamber region 128. By way of example, the gas temperature-adjusting device 240 can cool the temperature-adjusted gas 236 to a temperature of about 10 °C to about 20 °C or about 15 °C to 20 °C, and / or the temperature-adjusting device 240 can heat the temperature-adjusted gas 238 to a temperature of about 100 °C to about 500 °C or about 100 °C to about 400 °C or about 300 °C to about 500 °C.

[0049] The reactor system 200 can also include a controller 258, which can be similar to the controller 158 described above. According to examples of the present disclosure, the controller 258 is configured to flow both the temperature-adjusted gas 236 and the temperature-adjusted gas 238, and to adjust the flow rate of one or both of the temperature-adjusted gas 236 and the temperature-adjusted gas 238. For example, the controller 258 and / or the reactor system 200 can be configured to provide (e.g., pulse) a precursor through the gas distribution device 212 for a period of time, and to increase or decrease the flow rate of the temperature-adjusted gas 236 while increasing or decreasing the temperature-adjusted gas 238. By maintaining some flow of the temperature-adjusted gas 236 and the temperature-adjusted gas 238 to the gas distribution device 212 (e.g., during a pulse or precursor and / or between pulses of precursor), relatively rapid substrate temperature changes can be achieved.

[0050] The flow of temperature-adjusted gas 236 can be between about 1 and about 1000 SLM, or between about 50 and about 500 SLM, or between about 1 and about 50 SLM. Similarly, the flow of temperature-adjusted gas 238 can be between about 1 and about 1000 SLM, or between about 50 and about 500 SLM, or between about 1 and about 50 SLM.

[0051] The reactor 202 and the reactor wall 222 can be similar to the reactor 102 and the chamber wall 122, except that the reactor wall 222 can not include conduits therethrough to provide temperature-adjusted gas to the lower chamber region 130. However, in some cases, features of the reactor system 100 and the reactor system 200 can be combined.

[0052] The gas distribution device 212 can be similar to the gas distribution device 112, except that the gas distribution device 212 can include one or more inlets 214, 216 to receive temperature-adjusted gas from one or more temperature-adjusted gas sources 232, 234. In some cases, one or more temperature-adjusted gases 236, 238 can be provided through the gas distribution device 212 via the dedicated apertures 218, 220 and / or the apertures 148 used to distribute process gas.

[0053] The one or more conduits 223, 224 are fluidly coupled to the inlets 214, 216 of the top plate 233, and can be fluidly coupled to the plenum 231 of the gas distribution device 212. As shown, insulation material 226, 227 can surround at least a portion of the conduits 223, 224 to provide insulation from, for example, the top plate 233, the gas distribution device 212, and / or ambient conditions.

[0054] Figure 3 A portion of a reactor system 300 is shown in accordance with further embodiments of the disclosure. The reactor system 300 can be the same as the reactor system 200, except that the reactor system 300 includes a gas distribution device 312 that includes a further plenum 302 to receive and distribute temperature-adjusted gas 236 and / or temperature-adjusted gas 238 through apertures 304 within the gas distribution device 312. In some cases, the temperature-adjusted gas 236 and / or the temperature-adjusted gas 238 flow from the plenum 302 to the substrate 132 via dedicated apertures 308, 310. The apertures 308, 310 can be coupled to only one temperature-adjusted gas source 232 or temperature-adjusted gas source 234, or can be coupled to both. In some cases, one of the temperature-adjusted gas 236 and the temperature-adjusted gas 238 is provided via the plenum 306, and the other of the temperature-adjusted gas 236 and the temperature-adjusted gas 238 is provided via the plenum 302, which can be thermally insulated from one another, for example, via insulation material 314 or 316.

[0055] According to examples of the present disclosure, the holes 308, 310 can have a large cross-section, and there can be fewer number of holes 308, 310 compared to the holes 148 used to distribute precursors and / or reactants. For example, the cross-sectional dimension of the holes 308 or 310 can be 2, 4, 5, or 10 times or more than the cross-sectional dimension of the holes 148.

[0056] Additionally or alternatively, the temperature-adjusted gas 236 and / or the temperature-adjusted gas 238 can be provided to the substrate 132 via the holes 148, which are fluidly coupled to the plenum 306, and the holes 148 can provide precursors and / or reactants to the substrate 132.

[0057] Methods of using the reactor systems 200 or 300 can include placing a substrate on the surface of the susceptor 104, heating the substrate to a first temperature using a first flow ratio of the temperature-adjusted gas 236 and the temperature-adjusted gas 238, and heating the substrate to a second temperature using a second flow ratio of the temperature-adjusted gas 236 and the temperature-adjusted gas 238, where the first flow ratio and the second flow ratio are different. The method can additionally include the steps described above in connection with the reactor system 100 and / or other reactor systems described herein. As described above, in some cases, the flow of the temperature-adjusted gas 236 and the temperature-adjusted gas 238 can be continuous through one or more process steps, such as a cycle-in deposition step and / or a deposition and anneal and / or a processing step.

[0058] Figure 4 and Figure 5 Another reactor system 400 and method according to examples of the present disclosure are shown. The reactor system 400 is similar to the reactor systems 100-300, except that the reactor system 400 uses movement of the substrate to adjust the temperature of the substrate. Such substrate movement can be combined with the reactor systems and methods described above in connection with the reactor systems 100-300 and / or other reactor systems and / or methods described herein. Figures 1-3

[0059] The reactor system 400 includes a reactor 402, a susceptor 404, a gas distribution device 406, and a lift pin assembly 408. The reactor system 400 can also include a flow control ring 410, a vacuum source 412, and a controller 414. The reactor system 400 can additionally include a source for one or more reactants and / or direct and / or remote plasma and / or thermal excitation equipment within the reactor 402.

[0060] ​The reactor 402 can be similar to the reactor 102 and can be formed from the same or similar materials. The reactor 402 includes a chamber 420 that is partially defined by a chamber wall 422. The chamber wall 422 can include a gate valve opening 424. The chamber 420 can be divided into an upper chamber region or processing region 428 and a lower chamber region or load / unload region 430. In some cases, the lower chamber region 430 is lower than the top surface 405 of the susceptor 404 when the susceptor 404 is in a processing position.

[0061] The susceptor 404 can be the same as or similar to the susceptor 104. As described above, the susceptor 404 can include a temperature regulation device 434, which can be the same as or similar to the temperature regulation device 134.

[0062] The gas distribution device 406 can be the same as or similar to the gas distribution device 112. According to examples of the present disclosure, the gas distribution device 406 can include a temperature regulation device 436 to independently regulate the temperature of the gas distribution device 406. The temperature regulation device 436 can be or include any of the temperature regulation devices described herein.

[0063] The lift pin assembly 408 includes lift pins 438, 440, a lift pin plate 442, a lift pin actuator 446, which includes a lift pin motor 444 and an actuator arm 448. Although shown as having two lift pins, the lift pin assembly 408 can include any suitable number of lift pins, and typically includes three lift pins.

[0064] The vacuum source 412 can be the same as or similar to the vacuum source 156 described above.

[0065] The controller 414 can be configured to perform various functions and / or steps as described herein. The controller 414 can include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although shown as a single unit, the controller 414 can instead include multiple devices. For example, the controller 414 can be used to control the gas flow of precursors and / or reactants to the upper chamber region 428 and to move the lift pins 438, 440 during processing such that the lift pins 438, 440 raise the substrate 432 during a portion of the process and lower the substrate 432 (e.g., the remainder of the susceptor surface) during another portion of the process.

[0066] During operation of the reactor system 400, the substrate 432 can be at a first temperature when the substrate 432 is within the upper chamber region 428 and raised relative to the susceptor 404 ( Figure 4 ), and the substrate 432 can be at a second temperature when the substrate 432 is within the upper chamber region 428 and resting on or in contact with the susceptor 404 ( Figure 5 ).

[0067] As a particular example, a deposition method can include placing a substrate on the surface 405 of the susceptor 404, heating the substrate 432 to a first temperature using the first heater (e.g., the temperature adjustment device 434), moving the substrate to a raised position using one or more lift pins of the lift pin assembly 408, and heating the substrate in the raised position to a second temperature different from the first position, where the temperature of the substrate is modulated during the deposition method. The first temperature can be greater than the second temperature. For example, the second temperature can be about 50 °C, 100 °C, or 150 °C greater than the first temperature, or between about 100 °C and about 500 °C, or between about 200 °C and about 400 °C greater than the first temperature. Alternatively, the first temperature can be about 50 °C, 100 °C, or 150 °C greater than the second temperature, or between about 100 °C and about 500 °C, or between about 200 °C and about 400 °C greater than the second temperature. As a further example, the first temperature can be between about 300 °C and about 500 °C, or between about 350 °C and about 450 °C, and the second temperature can be between about 50 °C and about 150 °C, or between about 50 °C and 100 °C, or vice versa.

[0068] In the case of a cyclic (e.g., deposition) process, the substrate can be in the first position (e.g., resting on the susceptor 404) during the step of exposing the substrate to a reactant. The cyclic process can additionally include exposing the substrate to a precursor while the substrate is in the second (raised) position. Such a method can be particularly suitable for a deposition process that includes reacting a metal organic or organometallic with a reactant in alternating cycles, or where the reactant is provided continuously to the reaction chamber.

[0069] Exemplary metal organic precursors include molecules that include a metal atom and an organic ligand bonded to the metal through a nitrogen, oxygen, sulfur, or phosphorus atom. Exemplary organic ligands for metal organic precursors include dialkylamide ligands, alkylimidate ligands, N,N’-dialkylamidinate ligands, N,N’-dialkyldiazenido ligands, alkoxide ligands, beta-diketonate ligands, alkylthiolate ligands, and alkyl- or aryl-substituted phosphine ligands. Exemplary metal atoms in metal organic precursors include Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ru, Co, Ni, Cu, Zn, Al, Ga, In, Si, Ge, Sn, Sb, Bi, and Te. Non-limiting examples of particular precursors include titanium (IV) isopropoxide, hafnium tetrakis(ethylmethylamide), tris(N,N-diisopropylformamidinato)lanthanum, bis(dimethylamide)bis(tert-butylamide)molybdenum, pentakis(dimethylamide)tantalum, tris(diethylamide)(tert-butylamide)niobium, bis[l-(dimethylamino)-2-propanolato]copper, bis(N,N’-di-tert-butyl-diazenido)cobalt, and bis(N,N’-diisopropylacetamidinato)nickel.

[0070] Exemplary organometallic precursors include molecules comprising a metal atom and an organic ligand bonded to the metal through a carbon atom. Exemplary organic ligands for organometallic precursors include cyclopentadienyl ligands, alkylcyclopentadienyl ligands, alkyl ligands, carbonyl ligands, olefin and alkenyl ligands, alkyne and alkynyl ligands, arene and aryl ligands, and allyl ligands. Exemplary metal atoms in organometallic precursors include Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ru, Co, Ni, Cu, Zn, Al, Ga, In, Si, Ge, Sn, Sb, Bi, and Te. Non-limiting examples of particular precursors include trimethylaluminum, diethylzinc, tris(methylcyclopentadienyl)yttrium, hexacarbonylmolybdenum, hexacarbonyl(3,3-dimethyl-l-butyne)dicobalt, cyclohexadiene(tricarbonyl)ruthenium, triethylgallium, trimethylindium, bis(ethylbenzene)molybdenum, tris(dimethylamide)cyclopentadienylhafnium, bis(methylcyclopentadienyl)methyl(methoxy)zirconium, and (allyl)tricarbonylcobalt.

[0071] Exemplary reactants include one or more oxidizing agents, nitrogenating agents, sulfurating agents, phosphating agents, carbonating agents, and / or reducing agents.

[0072] Exemplary oxidizing agents include one or more of O2, water (H2O), hydrogen peroxide (H2O2), ozone (O3), nitrogen oxides (e.g., nitric oxide (NO), nitrous oxide (N2O), and nitrogen dioxide (NO2)).

[0073] Exemplary nitrogenating agents can be selected from one or more of nitrogen (N2), ammonia (NH3), hydrazine (N2H4) or hydrazine derivatives, mixtures of hydrogen and nitrogen, nitrogen ions, nitrogen radicals, and excited nitrogen species, and other nitrogen- and hydrogen-containing gases. The nitrogen reactant can include or consist of nitrogen and hydrogen. In some cases, the nitrogen reactant does not include diatomic nitrogen.

[0074] Exemplary sulfurating agents include hydrogen sulfide (H2S), sulfur (e.g., S8), mercaptans (e.g., alkyl and aryl mercaptans), compounds including disulfide bonds, compounds including sulfur-alkyl bonds, and compounds represented by the formula R-S-S-R’ or S-R, where R and R’ are independently selected from aliphatic (e.g., C1-C8) and aromatic groups, halogenated sulfurs (e.g., including one sulfur, such as SCI2or SBr2, or one halide, such as disulfide dichloride). The alkyl mercaptans can include C1-C8 alkyl mercaptans.

[0075] Exemplary phosphorusizing agents include phosphine (PH3), phosphorus halides, and phosphorus oxyhalides, such as phosphorus trichloride (PCI3), phosphorus pentachloride (PCI5), phosphorus tribromide (PBr3), phosphorus pentabromide (PBr5), phosphorus oxychloride (POCI3), phosphorus oxybromide (POBr3), organophosphates, and organophosphites, such as trimethyl phosphate (PO[OMe3]), trimethyl phosphite (P[OMe3]), aminophosphines, such as tris(dimethylamino)phosphine (P[NMe2]3), alkylphosphines, such as t-butylphosphine (C4H9PH2), triethylphosphine (P[CH2CH3]3), and silylphosphines, such as tris(trimethylsilyl)phosphine (P[SiMe3]3) and tris(silyl)phosphine (P[SiH3]3).

[0076] Exemplary carbonizing agents include acetylene, ethylene, alkyl halide compounds, olefin halide compounds, metal alkyl compounds, and the like. Exemplary haloalkyl compounds include CX4, CHX3, CH2X2, CH3X, where X = F, CI, Br, or I. Exemplary haloolefin compounds include C2H3X, C2H2X2, C2HX3, and C2X4, where X = F, CI, Br, or I. Exemplary haloacetylene compounds include C2X2and HC2X, where X = F, CI, Br, or I. Exemplary alkyl metal compounds include AlMe3, AlEt3, Al(iPr)3, Al(iBu)3, Al(tBu)3, GaMe3, GaEt3, Ga(iPr)3, Ga(iBu)3, Ga(tBu)3, InMe3, InEt3, In(iPr)3, In(iBu)3, In(tBu)3, ZnMe2, and ZnEt2.

[0077] Exemplary reducing agents include one or more of synthesis gas (H2+N2), ammonia (NH3), hydrazine (N2H4), alkylhydrazines (e.g., t-butylhydrazine (C4H 12 N2)), molecular hydrogen (H2), hydrogen atoms (H), hydrogen plasma, hydrogen radicals, hydrogen excitation species, (e.g., C1-C4) alcohols, (e.g., C1-C4) aldehydes, (e.g., C1-C4) carboxylic acids, (e.g., B1-B12) boranes, or amines.

[0078] At the end of the process, the susceptor 404 and lift pin assembly 408 can be lowered such that the substrate 432 is within the lower chamber region 430 and can be removed through the gate valve opening 424. In some cases, the lift pins 438, 440 can rest on the lift pin pads 450, 452 or the lift pin plate 442 such that the lift pins 438, 440 elevate the substrate 432 relative to the susceptor surface 405.

[0079] Figure 6Another reactor system 600 and method according to examples of the present disclosure is shown. The reactor system 600 includes a reactor 602, a pedestal 604, a gas distribution device 606, lift pins 608, 610, and a movable ground plane 612. The reactor system 600 can also include a flow control ring 614, a vacuum source 616, and a controller 618. The reactor system 600 can additionally include a source of one or more reactants and / or remote plasma and / or thermal excitation equipment within the reactor 602.

[0080] The reactor 602 can be similar to the reactor 102 and can be formed from the same or similar materials. The reactor 602 includes a chamber 620 that is partially defined by a chamber wall 622. The chamber wall 622 can include a gate valve opening 624. The chamber 620 can be divided into an upper chamber region or processing region 628 and a lower chamber region or load / unload region 629, as described above in connection with the reactor 102. Figure 1

[0081] The pedestal 604 can be the same or similar to the pedestal 104. As described above, the pedestal 604 can include a temperature regulation device 634, which can be the same or similar to the temperature regulation device 134. Further, as shown, the pedestal 604 can be coupled to ground to form a second ground plane, as described below.

[0082] The gas distribution device 606 can be the same or similar to the gas distribution device 112. According to examples of the present disclosure, the gas distribution device 606 includes a plate 630 that forms an electrode for plasma formation. As shown, the plate 630 is electrically coupled to a plasma power source 632. In this case, the plasma generated by the plate 630, the pedestal 604, and the power source 632 can be, for example, a capacitively coupled RF plasma. Alternatively, an inductively coupled plasma (ICP) can be used.

[0083] The lift pins 608, 610 can be the same or similar to the lift pins 114, 116 described above. According to examples of the present disclosure, the lift pins 608, 610 can be configured to raise or lower the movable ground plane 612. According to further examples, the lift pins 608, 610 are electrically conductive to facilitate grounding of the movable ground plane 612— for example, through lift pin pads 636, 638.

[0084] The movable ground plane 612 is configured to hold a substrate 640 in a raised position and can hold the substrate 640 during plasma heating— for example, when the substrate 640 is raised and separated from the pedestal 604. The movable ground plane 612 can be configured in a ring shape or have a circular cross-section. The movable ground plane 612 can be formed from an electrically conductive material, such as aluminum, anodized aluminum, nickel, stainless steel, hastelloy, etc.

[0085] ​The vacuum source 616 can be the same as or similar to the vacuum source 156 described above. As shown, the vacuum source 616 can be coupled to the exhaust path 652 and / or the lower chamber region 629.

[0086] The controller 618 can be similar to the controller 158 described above, except that the controller 618 is configured to move the movable ground plane 612 during heating of the substrate 640. In addition, the controller 618 can be configured to provide plasma power to the plate 630 to heat the substrate 640 to a second temperature using a plasma process and to heat the substrate 640 to a first temperature using a heater (e.g., the temperature conditioning device 634).

[0087] The reactor system 600 can be used to rapidly heat a surface of a substrate using a plasma (e.g., of an inert gas) formed within the reactor 602. According to examples of the present disclosure, a method of conditioning a temperature of a substrate within a reactor (e.g., the reactor 602) includes placing the substrate on a surface of a susceptor, heating the substrate in a first position (e.g., resting on the susceptor) to a first temperature using a first heater (e.g., the temperature conditioning device 634), and heating the substrate in a second position (e.g., an elevated position such that the substrate 640 is suspended by the movable ground plane 612) to a second temperature using an inert gas plasma source (e.g., formed using the plate 630 and the susceptor 604 as electrodes and applying plasma power to at least one of the electrodes). In some cases, the first position and the second position are within different reaction chambers of a module, as discussed below in connection with FIGS. 6A-6C. Figure 9 and Figure 10 are discussed in more detail. In other cases, as shown in FIG. 6D, the first position and the second position are within the same reaction chamber of the reactor system. In some cases, a plasma can be formed when the substrate is in the first position and the second position. Figure 6

[0088] The steps of heating to the first and second temperatures can be performed in the lower chamber region 629, the upper chamber region 628, or both. The heating steps can include heating the substrate 640 to a second temperature that is greater than the first temperature. For example, the second temperature can be about 50 °C to about 550 °C or about 300 °C to about 500 °C greater than the first temperature.

[0089] The reactor system 600 and related methods can be used for a variety of applications. For example, the heating steps can be used to heat the substrate 640 during and / or between process steps of a cyclic deposition process and / or can be used to anneal material on a surface of the substrate before and / or after a deposition process (e.g., a deposition process performed in the reactor 602).

[0090] Figure 7 ​Another reactor system 700 according to examples of the present disclosure is shown. The reactor system 700 is similar to the reactor system 600, except that the reactor system 700 includes a microwave plasma source to heat the substrate 718. The reactor system 700 includes a reactor 702, a susceptor 704, a gas distribution device 706, lift pins 708, 710, a microwave plasma source 712, and a movable ground plane 714. The reactor system 700 can also include a flow control ring 716, a vacuum source 719, and a controller 720. The reactor system 700 can additionally include a source for one or more reactants and / or a remote plasma and / or a thermal excitation device within the reactor 702.

[0091] The reactor 702, the susceptor 704, the gas distribution device 706, the lift pins 708, 710, and the movable ground plane 714 can be the same as or similar to the corresponding components described above in connection with the reactor system 600. The reactor 702 can include an upper chamber region 724 and a lower chamber region 726. Figure 6

[0092] The microwave plasma source can include, for example, one or more horn antennas 722 and an inert gas source 728. As shown, the one or more horn antennas 722 can be located within the lower chamber region 726. The inert gas can be provided to the lower chamber region 726 via the gas distribution device 706 and / or via a dedicated conduit 730 that extends through a chamber wall 732 of the reactor 702.

[0093] During operation of the reactor system 700, a substrate is placed on the surface 705 of the susceptor 704. Using a first heater 734 (e.g., on or within the susceptor 704), the substrate is heated to a first temperature in a first position (e.g., resting on the surface 705), and using the inert gas (e.g., microwave) plasma source, the substrate is heated to a second temperature in a second position (e.g., raised above the surface 705). As described above, the second temperature can be about 50 °C to about 550 °C or about 300 °C to about 500 °C greater than the first temperature. The reactor system 700 can be particularly suitable for performing an annealing step during a deposition method or process (e.g., when the substrate 718 is in the second / raised position). Methods of operating the reactor system 700 can additionally include degassing the reactor 702, for example, using microwaves or megasonic or ultrasonic waves.

[0094] Figure 8 ​Another reactor system 800 according to examples of the present disclosure is shown. The reactor system 800 includes a reactor 802, a pedestal 804, a gas distribution device 806, a temperature conditioning device 808, and a separator 810. In the illustrated example, the reactor system 800 can also include lift pins 811, 812, a flow control ring 814, a vacuum source 816, and a controller 818. Although not shown, the reactor system 800 can additionally include one or more reactant sources and / or direct and / or remote plasma and / or thermal excitation equipment within the reactor 802.

[0095] Similar to the reactor described above, the reactor 802 includes an upper chamber region 820 and a lower chamber region 824. When the pedestal 804 is in the first or processing position, the flow control ring 814 can be used to limit gas flow between the upper chamber region 820 and the lower chamber region 824.

[0096] The pedestal 804 can be the same as or similar to the pedestal 104 described above. The pedestal 804 is configured to hold a substrate during processing. To this end, the pedestal 804 includes a top surface 805, which can partially define the upper chamber region 820 during substrate processing.

[0097] The gas distribution device 806, lift pins 811, 812, flow control ring 814, and vacuum source 816 can be the same as or similar to the lift pins, flow control ring, and vacuum source described above.

[0098] The temperature conditioning device 808 can include any of the temperature conditioning devices described herein. For example, the temperature conditioning device 808 can be or include a heater, such as one or more of an infrared lamp, a flash lamp, an RF plasma source, a microwave plasma source, and the like. As shown, the temperature conditioning device 808 can be disposed in the lower chamber region 824 and separate from the pedestal 804. When the temperature conditioning device 808 includes a plasma source, the reactor system 800 can include a moveable ground plane as described above in connection with the reactor 102. Figure 6 and Figure 7 The temperature conditioning device 808 can include any of the temperature conditioning devices described herein. For example, the temperature conditioning device 808 can be or include a heater, such as one or more of an infrared lamp, a flash lamp, an RF plasma source, a microwave plasma source, and the like. As shown, the temperature conditioning device 808 can be disposed in the lower chamber region 824 and separate from the pedestal 804. When the temperature conditioning device 808 includes a plasma source, the reactor system 800 can include a moveable ground plane as described above in connection with the reactor 102.

[0099] The separator 810 can provide isolation between a first portion 826 of the lower chamber region 824 and a second portion 828 of the lower chamber region 824. As shown, the separator 810 can be located below the flow control ring 814 and / or below the upper chamber region 820 (e.g., within the lower chamber region 824).

[0100] According to examples of the present disclosure, the separator 810 includes a gas curtain between portions of the upper chamber region 820 and the lower chamber region 824 and / or between portions 826 and 828 of the lower chamber region 824. In these cases, the separator / gas curtain 810 can include a gas inlet 830 and a conduit 832 extending through a wall 834 of the reactor 802. An inert gas can flow through the gas inlet 830 to form the gas curtain.

[0101] According to additional or alternative embodiments of the present disclosure, the separator 810 can be or include a baffle 839 between portions of the upper chamber region 820 and the lower chamber region 824 and / or between portions 826 and 828 of the lower chamber region 824.

[0102] As described above, various methods can be performed within a single reactor of a reactor system. In other cases, various steps of the methods described herein can be performed within different reactors (e.g., different reactors of a processing module and / or processing system).

[0103] Figure 9 An exemplary processing system 900 according to examples of the present disclosure is shown. The processing system 900 includes a plurality of processing modules 902-908, a substrate handling chamber 910, a controller 912, a load lock chamber 914, and a front end of line module 916.

[0104] In the illustrated example, each processing module 902-908 includes four reaction chambers RC1-RC4. Unless otherwise noted, RC1-RC4 can be in any suitable order. Further, a processing module according to examples of the present disclosure can include any suitable number of reaction chambers. Moreover, various processing modules within a processing system can be configured the same or differently.

[0105] According to examples of the present disclosure, at least one processing module includes a first reaction chamber RC1, a second reaction chamber RC2, a third reaction chamber RC3, and an optional fourth reaction chamber RC4. According to additional examples, two or more (e.g., 2, 3, or 4) of the processing modules 902-908 include a first reaction chamber RC1, a second reaction chamber RC2, a third reaction chamber RC3, and an optional fourth reaction chamber RC4.

[0106] According to examples of the present disclosure, at least one processing module 902-908 includes a first reaction chamber RC1 configured as a reactor system (e.g., reactor system 100, 200, 300, 400, 600, 700, or 800) as described herein. According to various examples of the present disclosure, one or more of RC1-RC4 can be used to perform a deposition process (e.g., a cyclic deposition process) or a step (e.g., a step of a cyclic deposition process) as described herein, and another one of RC1-RC4 can be used to perform another step or process or to heat a substrate for a subsequent step or process.

[0107] The substrate handling chamber 910 is coupled to each of the processing modules 902-908. By way of example, the substrate handling chamber 910 can be coupled to each of the processing modules 902-908 via gate valves 918-932. According to examples of the present disclosure, the processing modules 902-908 can be coupled to and decoupled from the substrate handling chamber 910.

[0108] The substrate handling chamber 910 can be used to move substrates between the load lock chamber 914 and one or more of the processing modules 902-908 and / or between the processing modules 902-908. The substrate handling chamber 910 can include an end-of-line robot 934. The end-of-line robot 934 can transfer substrates from any of the pedestals within the load lock chamber 914 (e.g., support tables 940, 942 therein) and any reaction chamber. The end-of-line robot 934 can be or include, for example, a multi-jointed robot. The end-of-line robot 934 can use electrostatic or vacuum forces to retrieve and move substrates to be transferred, for example. The end-of-line robot 934 can be, for example, an end effector.

[0109] The controller 912 can be configured to perform one or more steps or functions as described herein. Similar to the controller described above, the controller 912 includes electronic circuitry and software to selectively operate valves, manifolds, heaters, pumps, and other components included in the processing system 900. Such circuitry and components operate to provide gases, regulate temperatures, etc. to provide proper operation of the processing system 900. The controller 912 can include modules, such as software and / or hardware components, that perform certain tasks. The modules can be configured to reside on a

[0110] The load lock chamber 914 is connected to the substrate handling chamber 910 via, for example, gate valves 936, 938, and to the equipment front end module 916. The load lock chamber 914 can include one or more (e.g., two) support tables 940, 942 for supporting substrates between the equipment front end module 916 and the substrate handling chamber 910.

[0111] The equipment front end module 916 is coupled to the load lock chamber 914 via an opening 944. The front end module 916 can suitably include one or more load ports 946. The load ports 946 can be configured to receive substrate carriers, such as front opening unified pods (FOUPs) 948. A robot 950 disposed in the equipment front end module 916 can transfer one or more (e.g., two at a time) substrates between the FOUPs 948 and the support tables 940, 942 within the load lock chamber 914.

[0112] Figure 10A top cross-sectional view of the example processing module 902 is shown in more detail. In the illustrated example, the processing module 902 includes a first reaction chamber RC1, a second reaction chamber RC2, a third reaction chamber RC3, and a fourth reaction chamber RC4. The first and second reaction chambers RC1, RC2 can be located closer to the substrate handling chamber 910 than the third and fourth reaction chambers RC3, RC4. One or more of the reaction chambers RC1-RC4 can be separated from one another using one or more of a gas curtain (GC) and one or more physical barriers (e.g., baffle plates) having areas or openings (which can be sealable) that allow substrates to pass therethrough. According to examples of the present disclosure, the substrate handling chamber 910 can be in communication with RC1 and RC2 either directly or via a gate valve (e.g., gate valves 918, 920).

[0113] In the illustrated example, the processing module 902 includes a transfer arm 1002 to move substrates between the reaction chambers RC1-RC4 within the processing module 902. The transfer arm 1002 can include a first through an n-th arm for each reaction chamber. For example, the transfer arm 1002 can include a first arm 1002a, a second arm 1002b, a third arm 1002c, a fourth arm 1002d, and a shaft 1002e. The first arm 1002a, the second arm 1002b, the third arm 1002c, and the fourth arm 1002d are supported by the shaft 1002e and rotate by rotation of the shaft 1002e. The arms 1002a-1002d are located between the reaction chambers or inside a particular reaction chamber depending on the rotational state of the shaft 1002e. The transfer arm 1002 can be used to provide a substrate onto a susceptor within a reaction chamber and to take a substrate off of a susceptor. The transfer arm 1002 can be used as a rotating arm to move a substrate in one of the first through fourth reaction chambers RC1-RC4 to another reaction chamber. Such a rotating arm, for example, rotates counterclockwise by a number of degrees calculated by 360 / reaction chamber number. The processing modules 904-908 can be configured to have the same or similar configuration as the processing module 902 shown in FIG. 1. Figure 10 The processing modules 904-908 can be configured to have the same or similar configuration as the processing module 902 shown in FIG. 1.

[0114] According to other examples of the present disclosure, as Figure 10As shown, the back end robot 934 can transfer substrates 1004, 1006 to / from the RC1 and RC2. One or more sensors 1008-1014 can be disposed in the area between the substrate handling chamber 910 and the process module 902. For example, two sensors 1008, 1010 can be disposed in front of the first reaction chamber RC1, and two sensors 1012, 1014 can be disposed in front of the second reaction chamber RC2. The one or more sensors 1008-1014 can include a light emitting element and a light sensing element that overlap each other (e.g., in a vertical direction). The light emitting element can emit light (e.g., laser light) in a positive or negative direction, and the light sensing element detects the light (e.g., laser light). The presence or absence of a substrate between the light emitting element and the light sensing element can be detected based on the receipt or non-receipt of light by the light sensing element. For example, the light sensing element can output a high level signal when it senses a threshold amount of light, and a low level signal when it does not receive or receives less than a threshold amount of light. The light sensing element can provide an output of a waveform corresponding to the passage of a substrate.

[0115] The process module 902 can also include an automated substrate sensing unit for determining whether a substrate has passed a predetermined location when the substrate is transferred by the back end robot 934 from the substrate handling chamber 910 to the first reaction chamber RC1 or the second reaction chamber RC2. The automated wafer sensing unit can include, for example, the aforementioned sensors 1008-1014 and a transfer module controller (TMC) 1016 connected to the sensors 1008-1014. The TMC 1016 can be located, for example, below the substrate handling chamber 910. The TMC 1016 can compare the detection results of the one or more sensors 1008-1014 with a predetermined waveform to determine whether a substrate has passed a predetermined location. In this way, detection of an abnormal transfer can be performed by the automated wafer sensing unit when a substrate is transferred in a direction from the substrate handling chamber 910 to the first reaction chamber RC1 or the second reaction chamber RC2 or when a substrate is transferred in the opposite direction. An abnormal transfer can be caused by misalignment of the substrate with respect to the back end robot 934, breakage of the substrate, etc. According to an example, the TMC 1016 can implement a correction function for correcting a transfer destination when an abnormal transfer is detected. In the example shown, the reactor process module 902 can also include gas sources 1018-1030, which can include precursor gas sources, reactant gas sources, and / or inert gas sources.

[0116] While example embodiments of the present disclosure are set forth herein, it is understood that the present disclosure is not limited to these examples. For example, while components, reactor systems, and methods are described in connection with various specific configurations, the present disclosure is not necessarily limited to these examples. Various modifications, changes, and enhancements in addition to those set forth herein can be made to the example components, reactors, systems, and methods set forth herein without departing from the spirit and scope of the present disclosure.

[0117] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various systems, assemblies, reactors, components, and configurations disclosed herein, as well as any and all equivalents thereof.

Claims

1. A reactor system, comprising: A reactor, comprising a chamber partially defined by chamber walls; A base configured to hold the substrate during processing; A temperature-regulating gas source, connected to the reaction chamber via a conduit, includes a temperature-regulating gas; and A gas temperature regulating device configured to increase and / or decrease the temperature of a temperature regulating gas. The conduit is configured to provide temperature-regulated gas near the substrate.

2. The reactor system according to claim 1, wherein, The catheter includes a section that passes through the chamber wall.

3. The reactor system according to claim 1, wherein, The conduit is fluidly connected to a part of the gas distribution device.

4. The reactor system according to claim 1, wherein, The gas temperature regulating device is located inside the reactor.

5. The reactor system according to claim 1, wherein, The reactor includes an upper chamber region and a lower chamber region, wherein the gas temperature regulating device is located in the lower chamber region.

6. The reactor system according to any one of claims 1-5, wherein, The temperature regulating gas includes one or more of hydrogen, helium, or argon in any combination.

7. The reactor system according to any one of claims 1-6, wherein, The gas temperature regulating device includes one or more of the following: a cooler, a heat exchanger, a resistance heater, a microwave plasma device, a radiation heater, an infrared heater, a flash lamp, or a compressor.

8. A deposition method, comprising the following steps: Place the substrate on the surface of the base; The substrate is heated to a first temperature using a first heater; as well as Using one or more lifting pins, the substrate is moved to a raised position and the substrate in the raised position is heated to a second temperature different from the first position. Among these methods, the temperature of the substrate is adjusted during the deposition process.

9. The method according to claim 8, wherein, The first temperature is greater than the second temperature.

10. The method of claim 8 or 9, further comprising exposing the substrate to the reactants when the substrate is on the surface of the base.

11. The method according to any one of claims 8-10, further comprising exposing the substrate to the precursor when the substrate is in the raised position.

12. The method according to claim 11, wherein, The precursors include organometallic precursors.

13. The method according to any one of claims 8-12, wherein, The first temperature is between approximately 300°C and approximately 500°C.

14. The method according to any one of claims 8-13, wherein, The second temperature is between approximately 50°C and approximately 150°C.

15. A method for regulating the temperature of a substrate within a reactor, the method comprising the following steps: Place the substrate on the surface of the base; Using a first heater, the substrate at the first position is heated to a first temperature; as well as Using an inert gas plasma source, the substrate in the second position is heated to a second temperature.

16. The method according to claim 15, wherein, The first position and the second position are in different reaction chambers of the module.

17. The method according to claim 15, wherein, The first position and the second position are in a reaction chamber.

18. The method according to any one of claims 15-17, wherein, The substrate is coupled to a first ground plane at the first location and to a second ground plane at the second location.

19. The method according to any one of claims 15-18, wherein, The inert gas plasma source includes a microwave plasma source.

20. The method according to any one of claims 15-19, comprising performing an annealing process when the substrate is in the second position.

21. A reactor system, comprising: The reactor comprises an upper chamber region and a lower chamber region; A base configured to hold a substrate during processing, the base including a top surface that partially defines an upper chamber region; as well as The temperature control device is located in the lower chamber area and is separate from the base.

22. The reactor system of claim 21, further comprising an air curtain between a portion of the upper chamber region and the lower chamber region.

23. The reactor system of claim 21, further comprising a baffle between the upper chamber region and the lower chamber region.

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