Gas supply device and processing device
By using partition walls and forced exhaust mechanisms in the gas supply device, the hazards of flammable or corrosive gas leaks to the equipment are solved, thereby improving safety and reliability in semiconductor manufacturing processes and preventing fires and corrosion.
Patent Information
- Application Number
- CN202510979239.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-07-20
- Filing Date
- 2025-07-16
- Publication Date
- 2026-01-20
AI Technical Summary
Existing gas supply devices pose a risk of leaks that could lead to equipment fires or corrosion when supplying flammable or corrosive gases, especially in semiconductor manufacturing processes where it is necessary to effectively prevent gases from coming into contact with potential ignition sources or corroding equipment.
A gas supply device is designed, which divides the interior of the shell into multiple spaces by a partition wall, forming a first container chamber, a flow path chamber, and a second container chamber. A forced exhaust mechanism is used to ensure that flammable or corrosive gases do not come into contact with the equipment when they leak from the flow path. Separating components are used to separate the flow path areas to prevent the gas from coming into contact with potential ignition sources or corroding the equipment.
It effectively suppresses the damage to equipment caused by flammable or corrosive gas leaks, improves the safety and reliability of gas supply and processing devices, prevents fires and corrosion, and ensures the safe operation of the equipment.
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Figure CN121363716A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a gas supply device that supplies a plurality of gases to a plasma generation chamber in which plasma is generated internally, and a processing device that performs a predetermined process on an object by using the gas supply device. BACKGROUND
[0002] In semiconductor processes, a processing device, such as an ion implantation device, a plasma processing device, or the like, that has a plasma generation chamber in which plasma is generated internally is used. Such a processing device generally has a gas supply device that supplies a raw material gas or the like that is a raw material of plasma to the plasma generation chamber. As one example of such a gas supply device, a gas supply system disclosed in Patent Literature 1 is known.
[0003] The gas supply system of Patent Literature 1 is used for a semiconductor process device, such as an ion implantation device, and has a gas cabinet that is connected to the semiconductor process device. Inside the gas cabinet, a plurality of gas cylinders that store gases, such as hydrides and halides, and a gas distribution system that supplies these gases to an ion source that is provided in the ion implantation device are arranged. In addition, in order to improve safety, the inside of the gas cabinet is set to a negative pressure. Therefore, the gases in the gas cabinet are forcibly discharged to the outside.
[0004] Generally, a mass flow controller that monitors the flow rate of a gas flowing in a pipe, a pressure sensor that measures the pressure of a gas in a pipe, and the like are housed in the cabinet of the gas supply device. Since these devices generate static electricity, if the gas supply device supplies a flammable gas, such as hydrogen, and a gas leaks from a flow path, the devices can become a source of ignition.
[0005] In addition, if the gas supply device supplies a corrosive gas that contains chlorine or the like, and a corrosive gas leaks from a flow path of the gas distribution system, the gas can corrode the devices in the cabinet.
[0006] [Related Art Documents]
[0007] [Patent Literature]
[0008] Patent Literature 1: Japanese Patent Application Laid-Open No. 2003-532034 SUMMARY
[0009] [Problems to be Solved by the Invention]
[0010] A gas supply device that is used for a processing device, such as an ion implantation device, supplies a plurality of gases to a plasma generation chamber in which plasma is generated internally. When such a gas supply device supplies a flammable gas to the plasma generation chamber, it is necessary to suppress a leaked flammable gas from contacting devices that can become a potential source of ignition.
[0011] Further, when the gas supply device supplies the etching gas to the plasma generating chamber, it is also important to suppress the etching gas from leaking to contact the equipment and to suppress the corrosion of the equipment.
[0012] The present application relates to a gas supply device that supplies a plurality of gases to a plasma generating chamber in which plasma is generated inside, and a processing device provided with the gas supply device. The present application aims to suppress a gas having flammability or a gas having corrosiveness from contacting equipment that constitutes a flow path, in a situation in which the gas leaks from the flow path.
[0013] [Means for solving the problem]
[0014] The gas supply device of the present application supplies a plurality of gases to a plasma generating chamber in which plasma is generated inside, and is configured to include: a first container that stores a first gas having flammability or corrosiveness; a second container that stores a second gas that is a different gas species from the first gas; a first flow path through which the first gas flows; a second flow path through which the second gas flows; and a housing that has a first container housing chamber that houses the first container and a flow path housing chamber that houses the first flow path and the second flow path; the housing has one or a plurality of partition walls that divide the inside of the housing into a plurality of spaces; the first container housing chamber and the flow path housing chamber are formed by the inside of the housing being divided by the partition walls; and the first container housing chamber and the flow path housing chamber are both forcibly exhausted.
[0015] In this configuration, the first container housing chamber that houses the first container and the flow path housing chamber that houses the first flow path and the second flow path are formed by the inside of the housing being divided by the partition walls. Further, the gas in the first container housing chamber and the gas in the flow path housing chamber are both forcibly exhausted.
[0016] Therefore, when a gas having flammability or corrosiveness leaks from the first container, the gas is directly exhausted to the outside without flowing into the flow path housing chamber due to the forced exhaust of the first container housing chamber.
[0017] Further, when a gas having flammability or corrosiveness leaks from the first flow path in the flow path housing chamber, the gas is directly exhausted to the outside without remaining in the flow path housing chamber due to the forced exhaust of the flow path housing chamber.
[0018] Further, the gas supply device can be configured such that the housing further has a second container housing chamber that is formed by the inside of the housing being divided by the partition walls and houses the second container.
[0019] In this configuration, the second container housing chamber is formed by partitioning the inside of the case with a partition wall. At this time, the first container, the first flow path and the second flow path, and the second container are housed in the first container housing chamber, the flow path housing chamber, and the second container housing chamber, respectively, which are formed by partitioning the inside of the case.
[0020] Further, the gas supply device can be configured such that the flow path housing chamber has a first flow path region that collects the first flow path and a second flow path region that collects the second flow path; the first flow path region is located on the downstream side of the second flow path region in a path of exhaust of the flow path housing chamber; and the flow path housing chamber forcibly exhausts from a more downstream side of the first flow path region in the path.
[0021] In this configuration, the first flow path region that collects the first flow path is located on the downstream side of the second flow path region that collects the second flow path in terms of a path of exhaust of the flow path housing chamber. Therefore, even if the first gas leaks from the first flow path, the gas does not directly escape outside the flow path housing chamber through the second flow path region.
[0022] Further, the gas supply device of the present application can be configured such that the first gas is flammable; the first flow path region has the first device that constitutes the first flow path and is a potential ignition source disposed therein; and the second flow path region has the second device that constitutes the second flow path and is a potential ignition source disposed therein.
[0023] In this configuration, when the first gas is flammable gas, the first device and the second device, which are potential ignition sources in the case of leakage of the gas from the first flow path, are disposed in the first flow path region and the second flow path region, respectively. Here, the first flow path region is located on the downstream side of the second flow path region in terms of a path of exhaust of the flow path housing chamber. Therefore, the gas that leaks from the first flow path does not directly escape outside through the second flow path region and does not stagnate in the first flow path region. In other words, in this configuration, even in the case of leakage of flammable gas from the first flow path, the gas can be prevented from contacting the first device and the second device, and safety can be improved.
[0024] Further, the gas supply device of the present application can be configured to further include one or more partition members that partition the first flow path region into a region in which the first device is disposed and a region in which the first device is not disposed.
[0025] In this configuration, the first flow path region is divided by the partition member into a region in which the first device is disposed and a region in which the first device is not disposed. Therefore, even if the first gas having flammability leaks in the region in which the first device is not disposed, the gas can be inhibited from flowing to the region including the first device that is a potential ignition source by the partition member. As a result, safety when the first gas leaks from the first flow path can be further improved.
[0026] The processing device of the present application is configured to have a plasma generation chamber that generates plasma internally and a gas supply device that supplies a plurality of gases to the plasma generation chamber, and performs a predetermined process on an object, the gas supply device having: a first container that stores a first gas having flammability or corrosiveness; a second container that stores a second gas that is a different gas species from the first gas; a first flow path through which the first gas flows; a second flow path through which the second gas flows; and a housing that has a first container housing chamber that houses the first container and a flow path housing chamber that houses the first flow path and the second flow path; the housing having one or a plurality of partition walls that divide the inside of the housing into a plurality of spaces; the first container housing chamber and the flow path housing chamber being formed by the inside of the housing being divided by the partition walls; and the first container housing chamber and the flow path housing chamber both being forcibly vented.
[0027] [Effects of the Invention]
[0028] The gas supply device and the processing device of the present application can inhibit a gas having flammability or a gas having corrosiveness from contacting a device that constitutes a flow path, even if the gas leaks from the flow path. BRIEF DESCRIPTION OF DRAWINGS
[0029] Figure 1 A front view showing the gas supply device and the processing device of the embodiment of the present application.
[0030] Figure 2 A perspective view showing the gas supply device of the embodiment.
[0031] Figure 3 A front view showing a state in which the partition member is removed from the gas supply device of the embodiment.
[0032] Figure 4 A front view showing a state in which the partition member is attached to the gas supply device of the embodiment.
[0033] Figure 5 A longitudinal sectional view of the gas supply device of the embodiment of the present application taken along the line X1-X1 of Figure 3
[0034] Figure 6 A longitudinal sectional view of the gas supply device of the embodiment of the present application taken along the line X1-X1 ofFigure 4 Longitudinal section view of line X2-X2.
[0035] Figure 7 This is a schematic diagram illustrating a variation of the gas supply device according to the described embodiment.
[0036] Explanation of reference numerals in the attached figures
[0037] 10A, 10B Gas Supply Devices
[0038] 11. Shell
[0039] 12 First Box
[0040] 12a First Body
[0041] 12b First Door
[0042] 13 Second Box
[0043] 13a Second Body
[0044] 13b Second Door
[0045] 13c top wall
[0046] 13d First vent
[0047] 14 First partition wall
[0048] 14a Bottom
[0049] 14b Top
[0050] 14c Side
[0051] 14d Second ventilation port
[0052] 15 Second partition wall
[0053] 16. Exhaust duct
[0054] 17. Separating components
[0055] 17a Through hole
[0056] 18 Third partition wall
[0057] 20 First Container
[0058] 20a Flammable Gas Cylinder
[0059] 20b Flammable gas containers
[0060] 20C Corrosive Gas Container
[0061] 21 Second Container
[0062] 21a first non-combustible gas cylinder
[0063] 21b second non-combustible gas cylinder
[0064] 21c third non-combustible gas cylinder
[0065] 22 first flow path
[0066] 22a combustible gas flow path
[0067] 23 second flow path
[0068] 23a first non-combustible gas flow path
[0069] 23b second non-combustible gas flow path
[0070] 23c third non-combustible gas flow path
[0071] 24a first device
[0072] 24b second device
[0073] 25a first joint
[0074] 25b second joint
[0075] 31 first container housing chamber
[0076] 31a first housing region
[0077] 31b second housing region
[0078] 32 flow path housing chamber
[0079] 33 first flow path region
[0080] 34 second flow path region
[0081] 35 second container housing chamber
[0082] 36a device arrangement region
[0083] 36b device non-arrangement region
[0084] 100 processing device
[0085] 110 ion source
[0086] 111 plasma generation chamber
[0087] 112 cathode
[0088] 113 gas introduction port
[0089] 114 extraction opening
[0090] 120 extraction electrode
[0091] 130 mass analysis magnet
[0092] 140 Processing Room
[0093] T object
[0094] IB ion beam. Detailed Implementation
[0095] The following describes a gas supply device 10A and a processing apparatus 100 equipped with the gas supply device 10A according to an embodiment of the present invention. Figures 1 to 7 Made for the purpose of enabling readers to understand the present invention, the shapes, lengths, and scales of the constituent elements in the various figures may not be consistent.
[0096] Figure 1 This is a schematic diagram of the gas supply device 10A and the processing device 100 equipped with the gas supply device 10A according to this embodiment.
[0097] The processing apparatus 100 includes a plasma generation chamber 111 and is an apparatus for performing predetermined processing on a target object T. Specifically, the processing apparatus 100 of this embodiment is used in semiconductor manufacturing processes and is an ion implantation apparatus for performing ion implantation on a target object T belonging to a wafer.
[0098] like Figure 1 As shown, the processing apparatus 100 includes: an ion source 110 having a plasma generation chamber 111; and an extraction electrode 120 for extracting an ion beam IB from the ion source 110. Furthermore, the processing apparatus 100 also includes: a mass analysis magnet 130 for allowing the ion beam IB to pass through and performing mass separation; and a processing chamber 140 for receiving the ion beam IB introduced into its interior.
[0099] Furthermore, the processing apparatus 100 includes a gas supply device 10A, which can supply various gases to the plasma generation chamber 111 of the ion source 110. The gas supply device 10A can switch the type of gas supplied to the plasma generation chamber 111, and can also supply two or more gases to the plasma generation chamber 111 simultaneously.
[0100] The ion source 110 includes a plasma generation chamber 111 and a cathode 112, which supplies thermionic electrons to the plasma generation chamber 111 by heating. In addition, the plasma generation chamber 111 includes a gas inlet 113 for introducing gas supplied from the gas supply device 10A into the plasma generation chamber 111 and an outlet 114 for leading the ion beam IB to the outside.
[0101] In plasma generation chamber 111, plasma is generated using a raw material gas introduced through gas inlet 113 and thermionic electrons emitted from cathode 112. Furthermore, the plasma generated in plasma generation chamber 111 is extracted into an ion beam IB through extraction opening 114. The ion beam IB extracted from plasma generation chamber 111 undergoes mass separation by mass analysis magnet 130, and the ion beam IB containing predetermined ions is introduced into processing chamber 140.
[0102] A target object T is disposed within a processing chamber 140, and predetermined ions are implanted into the target object T by irradiating it with an ion beam IB within the processing chamber 140. The processing apparatus 100 of this embodiment, in addition to including the gas supply device 10A of this embodiment, has the general configuration of an ion implantation apparatus used in semiconductor manufacturing processes.
[0103] Here, the processing device 100 is not limited to an ion implantation device. If it has a plasma generation chamber that can generate plasma inside, the processing device 100 can be any device. For example, the processing device 100 can also be a plasma processing device that irradiates the target object T with ions contained in the plasma generated in the plasma generation chamber 111 without mass separation.
[0104] Furthermore, the processing apparatus 100 can also be an apparatus for surface treatment of metal materials, plastic materials, etc. In other words, the object T is not limited to wafers but can also be metal materials, plastic materials, etc.
[0105] Figure 2 This is a perspective view of the gas supply device 10A according to this embodiment.
[0106] like Figure 1 and Figure 2 As shown, the gas supply device 10A includes a housing 11 consisting of a first housing 12 and a second housing 13. Figure 2 As shown, the first box 12 is generally rectangular in shape and consists of a first body 12a and a first door 12b. One side of the first body 12a is an opening, and the first door 12b opens and closes the opening of the first body 12a. Similarly, the second box 13 is generally rectangular in shape and consists of a second body 13a and a second door 13b. One side of the second body 13a is an opening, and the second door 13b opens and closes the opening of the second body 13a.
[0107] When the side of the first body 12a with the opening is regarded as the front of the first body 12a, and the side of the second body 13a with the opening is regarded as the front of the second body 13a, the housing 11 is configured such that the back of the first body 12a contacts the side of the second body 13a.
[0108] The gas supply device 10A includes one first container 20 that stores a first gas having flammability or corrosiveness, and three second containers 21 that store second gases different in gas species from the first gas. Here, the number of the first containers 20 and the number of the second containers 21 included in the gas supply device 10A are not limited to specific numbers.
[0109] The first gas of the present embodiment is a gas having flammability, such as hydrogen. Further, the second gas of the present embodiment is a gas having no flammability, such as BF3 gas, PF3 gas, or PH3 gas.
[0110] Since the first gas of the present embodiment is a gas having flammability, the first container 20 is also referred to as a flammable gas cylinder 20a in the following. Further, since the second gas of the present embodiment is a gas having no flammability, the three second containers 21 are also referred to as a first nonflammable gas cylinder 21a, a second nonflammable gas cylinder 21b, and a third nonflammable gas cylinder 21c, respectively, in the following, and the nonflammable gases stored in the first nonflammable gas cylinder 21a, the second nonflammable gas cylinder 21b, and the third nonflammable gas cylinder 21c are also referred to as a first nonflammable gas, a second nonflammable gas, and a third nonflammable gas, respectively.
[0111] Here, the first container 20 and the second container 21 are not limited to gas cylinders. For example, when the first gas is hydrogen, the first container 20 can be a container having a hydrogen storage alloy inside.
[0112] The gas supply device 10A includes a first flow path 22. The first flow path 22 has one end connected to the first container 20 and the other end connected to the ion source 110. The first gas stored in the first container 20 flows in the first flow path 22 and is supplied to a plasma generation chamber 111 included in the ion source 110.
[0113] Similarly, the gas supply device 10A includes three second flow paths 23 each having one end connected to each of the second containers 21 and the other end connected to the ion source 110. The second gas stored in each of the second containers 21 flows in the second flow path 23 and is supplied to the plasma generation chamber 111 included in the ion source 110. In the present embodiment, each of the second flow paths 23 having one end connected to the first nonflammable gas cylinder 21a, the second nonflammable gas cylinder 21b, and the third nonflammable gas cylinder 21c is also referred to as a first nonflammable gas flow path 23a, a second nonflammable gas flow path 23b, and a third nonflammable gas flow path 23c, respectively.
[0114] That is, the gas supply device 10A of this embodiment includes a first non-flammable gas flow path 23a, a second non-flammable gas flow path 23b, and a third non-flammable gas flow path 23c. These flow paths are connected at one end to the first non-flammable gas cylinder 21a, the second non-flammable gas cylinder 21b, and the third non-flammable gas cylinder 21c, respectively, and at the other end to the ion source 110.
[0115] The first non-flammable gas flows through the first non-flammable gas flow path 23a and is supplied to the plasma generation chamber 111. Similarly, the second and third non-flammable gases flow through the second non-flammable gas flow path 23b and the third non-flammable gas flow path 23c, respectively, and are supplied to the plasma generation chamber 111.
[0116] Figure 3 Front view of gas supply device 10A. Figure 3 The image shows the state where the separator 17, described later, has been removed.
[0117] like Figure 2 and Figure 3 As shown, the gas supply device 10A has a first container housing chamber 31, which houses a first container 20. The first container housing chamber 31 is a region on one side formed by the first partition wall 14, which divides the interior of the first body 12a. In this embodiment, a flammable gas cylinder 20a is housed in the first container housing chamber 31.
[0118] Furthermore, the gas supply device 10A has a flow path receiving chamber 32, which receives a portion of the area of the first flow path 22 and a portion of the area of each of the second flow paths 23. The flow path receiving chamber 32 is located on the other side of the area formed by the first partition wall 14 separating the interior of the first body 12a.
[0119] In this embodiment, the flow path containment chamber 32 contains a portion of the flammable gas flow path 22a, a portion of the first non-flammable gas flow path 23a, a portion of the second non-flammable gas flow path 23b, and a portion of the third non-flammable gas flow path 23c.
[0120] like Figure 2 As shown, the gas supply device 10A has a second container housing 35, which houses three second containers 21, namely a first non-flammable gas cylinder 21a, a second non-flammable gas cylinder 21b, and a third non-flammable gas cylinder 21c.
[0121] The second container chamber 35 is formed by dividing the internal space of the shell 11 through the second partition wall 15.
[0122] The second container housing chamber 35 in the present embodiment is formed by the second body 13a. The second partition wall 15 in the present embodiment is a wall portion where the first body 12a and the second body 13a are in contact with each other.
[0123] In the present embodiment, the first body 12a and the second body 13a are substantially integrated by the back surface of the first body 12a being in contact with the side surface of the second body 13a, thereby constituting the housing 11. Therefore, in the present embodiment, the internal space of the first body 12a and the internal space of the second body 13a are formed separately by the internal space of the housing 11 being partitioned by the wall portion where the first body 12a and the second body 13a are in contact with each other.
[0124] As shown in Figs. 1 and 2, the first container housing chamber 31 is formed by the first body 12a. The first container housing chamber 31 is a space for housing the first container 30a. The first container 30a is a container for storing a flammable gas. The first container 30a is a cylinder-shaped container. The first container 30a is a container for storing a flammable gas. The first container 30a is a cylinder-shaped container. Figure 2 Figure 3 As shown in Figs. 1 and 2, the first container housing chamber 31 is formed by the first body 12a. The first container housing chamber 31 is a space for housing the first container 30a. The first container 30a is a container for storing a flammable gas. The first container 30a is a cylinder-shaped container. The first container 30a is a container for storing a flammable gas. The first container 30a is a cylinder-shaped container.
[0125] The gas supply device 10A is provided with an exhaust conduit 16 connected to the first vent 13d formed by the top wall 13c. Further, a through hole not shown is formed in the bottom of the first body 12a to allow gas from the outside of the housing 11 to flow in. The gas supply device 10A is configured to forcibly exhaust the inside of the housing 11 through the exhaust conduit 16 during operation of the gas supply device 10A. Therefore, the inside of the first container housing chamber 31 and the inside of the flow path housing chamber 32 are both under negative pressure.
[0126] More specifically, during operation of the gas supply device 10A, gas in the first container housing chamber 31 flows from below to the first vent 13d and is forcibly exhausted through the first vent 13d.
[0127] Further, the top portion 14b of the first partition wall 14 is formed with a second vent 14d. The second vent 14d is located below the first vent 13d. Therefore, during operation of the gas supply device 10A, gas in the flow path housing chamber 32 flows from below to above, sequentially passes through the second vent 14d and the first vent 13d, and is forcibly exhausted to the outside through the exhaust conduit 16.
[0128] Further, the gas supply device 10A can have a through-hole in the second partition wall 15 to communicate the inside space of the first container housing chamber 31 with the inside space of the second container housing chamber 35. At this time, the second container housing chamber 35 is also under a negative pressure. That is, the gas in the second container housing chamber 35 is forcibly discharged to the outside after entering the first container housing chamber 31 via the through-hole, via the exhaust conduit 16.
[0129] As shown in FIG. 1, the flow path housing chamber 32 has a first flow path region 33 that collects a portion of the first flow path 22, that is, a portion of the flammable gas flow path 22a in the present embodiment. Further, the flow path housing chamber 32 has a second flow path region 34 that collects a portion of the second flow path 23, that is, a portion of the first non-flammable gas flow path 23a, the second non-flammable gas flow path 23b, and the third non-flammable gas flow path 23c in the present embodiment. Figure 2 Figure 3 As shown in FIG. 1, the flow path housing chamber 32 has a first flow path region 33 that collects a portion of the first flow path 22, that is, a portion of the flammable gas flow path 22a in the present embodiment. Further, the flow path housing chamber 32 has a second flow path region 34 that collects a portion of the second flow path 23, that is, a portion of the first non-flammable gas flow path 23a, the second non-flammable gas flow path 23b, and the third non-flammable gas flow path 23c in the present embodiment.
[0130] The gas supply device 10A has at least one first device 24a that constitutes a portion of the first flow path 22 and is a potential ignition source. Further, the gas supply device 10A has at least one second device 24b that constitutes a portion of the second flow path 23 and is a potential ignition source.
[0131] In the present embodiment, the three second flow paths 23, that is, the first non-flammable gas flow path 23a, the second non-flammable gas flow path 23b, and the third non-flammable gas flow path 23c each have at least one second device 24b.
[0132] The first device 24a and the second device 24b are devices that generate static electricity when they operate, such as a mass flow controller that controls the flow rate of gas, a pressure sensor that monitors the gas pressure in a pipe, and the like. Here, the first device 24a and the second device 24b are not limited to a mass flow controller or a pressure sensor, but can be, for example, a pressure switch, a flow meter, a solenoid valve, an electric valve, and the like.
[0133] In the present embodiment, the first device 24a that constitutes a portion of the first flow path 22 is disposed so as to be entirely contained in the first flow path region 33. That is, the potential ignition source that constitutes a portion of the first flow path 22 is entirely located within the first flow path region 33.
[0134] Further, the second device 24b that constitutes a portion of the second flow path 23 is disposed so as to be entirely contained in the second flow path region 34. That is, the potential ignition source that constitutes a portion of the second flow path 23 is entirely located within the second flow path region 34.
[0135] The flow path housing chamber 32 can also be considered to be divided into a first flow path region 33 and a second flow path region 34. The first flow path region 33 is configured to house one or more first devices 24a, and the second flow path region 34 is configured to house one or more second devices 24b.
[0136] In the gas supply device 10A of the present embodiment, the first flow path region 33 is located on the downstream side of the exhaust path of the flow path housing chamber 32, that is, above the second flow path region 34.
[0137] Further, as shown in Figs. 1 and 2, the gas supply device 10A also has one or more partition members 17. The partition member 17 divides the first flow path region 33 into a device arrangement region 36a and a device non-arrangement region 36b. The device arrangement region 36a is a region in which the first device 24a is arranged. Further, the device non-arrangement region 36b is a region in which the first device 24a is not arranged. Figure 2 Figure 4 Figure 6 Further, as shown in Figs. 1 and 2, the gas supply device 10A also has one or more partition members 17. The partition member 17 divides the first flow path region 33 into a device arrangement region 36a and a device non-arrangement region 36b. The device arrangement region 36a is a region in which the first device 24a is arranged. Further, the device non-arrangement region 36b is a region in which the first device 24a is not arranged.
[0138] In the present embodiment, the partition member 17 is arranged in the vertical direction. Further, the device arrangement region 36a is formed on the opening side of the first body 12a, and the device non-arrangement region 36b is formed on the back side of the first body 12a.
[0139] The partition member 17 of the present embodiment is a single plate member that is configured to be detachable with respect to the housing 11. The partition member 17 is formed with a through-hole 17a that allows the partition member 17 to be detachable without interfering with the first device 24a.
[0140] In the state in which the first door 12b is open, the inside of the first body 12a, that is, the first container housing chamber 31 and the flow path housing chamber 32 are exposed to the outside. Therefore, the worker can perform replacement of the first container 20 (in the present embodiment, the flammable gas cylinder 20a), and can perform inspection, replacement of parts, and the like of the pipe members that constitute the second flow path 23 (in the present embodiment, the first non-flammable gas flow path 23a, the second non-flammable gas flow path 23b, and the third non-flammable gas flow path 23c), the first device 24a, and the second device 24b, and the like.
[0141] At this time, in the state in which the first door 12b is open, since the device arrangement region 36a is located on the opening side of the first body 12a, the worker can perform inspection, replacement, and the like of the first device 24a. On the other hand, due to the presence of the partition member 17, the worker cannot perform inspection, replacement, and the like of the members present in the device non-arrangement region 36b.
[0142] Therefore, when the worker performs the inspection or replacement of the member present in the device non-arrangement region 36b, the partition member 17 is first removed. After the work is completed, the partition member 17 is again installed in the housing 11.
[0143] Further, the first flow path 22 and the second flow path 23 are configured by connecting a plurality of pipe members with a plurality of joints. Figures 2 to 4 The first joint 25a configuring the first flow path 22 and the second joint 25b configuring the second flow path 23 are schematically shown. The first flow path 22 is provided with a plurality of first joints 25a, but Figures 2 to 4 only one is schematically shown. Similarly, each of the second flow paths 23 is provided with a plurality of second joints 25b, but Figures 2 to 4 only one is schematically shown.
[0144] As Figure 6 shown in FIG. 1, the gas supply device 10A of the present embodiment is configured such that all of the first joints 25a arranged in the flow path housing chamber 32 are present in the device non-arrangement region 36b in which the first device 24a is not arranged.
[0145] Further, the second vent 14d is positioned above the device non-arrangement region 36b, and the gas in the flow path housing chamber 32 is always discharged to the outside through the exhaust conduit 16 after sequentially passing through the through hole 17a of the partition member 17, the second vent 14d, and the first vent 13d.
[0146] Therefore, for example, combustible gas leaked from the first joint 25a does not invade the device arrangement region 36a in which the first device 24a is arranged, but is discharged to the outside through the second vent 14d. In other words, even if combustible gas leaks from the first joint 25a, the gas is inhibited from contacting the first device 24a and the second device 24b, and thus the safety of the gas supply device 10A and the processing device 100 can be ensured.
[0147] In the gas supply device 10A and the processing device 100 of the present embodiment, the first container housing chamber 31 housing the first container 20 and the flow path housing chamber 32 housing a portion of the first flow path 22 and a portion of the second flow path 23 are formed by partitioning the inside of the first body 12a of the housing 11 with the first partition wall 14.
[0148] During the operation of the gas supply device 10A, the first container housing chamber 31 and the flow path housing chamber 32 are under negative pressure. The gas in the first container housing chamber 31 is discharged to the outside through the exhaust conduit 16 after passing through the first vent 13d formed in the top wall 13c of the housing 11. Therefore, for example, even if the first gas leaks from the first container 20 or from the joint that constitutes the first flow path 22 and is disposed in the first container housing chamber 31, the gas is directly discharged to the outside without invading the flow path housing chamber 32 and remaining in the first container housing chamber 31, as a result of the forced discharge of the first container housing chamber 31.
[0149] Further, in the flow path housing chamber 32, for example, if the first gas leaks from the first joint 25a that constitutes the first flow path 22, the gas is directly discharged to the outside without remaining in the flow path housing chamber 32, as a result of the forced discharge of the flow path housing chamber 32.
[0150] When the first gas stored in the first container 20 is flammable, the leaked first gas does not invade the flow path housing chamber 32 from the first container housing chamber 31 and does not remain in the flow path housing chamber 32 but is discharged to the outside. Therefore, the gas can be inhibited from contacting the first device 24a and the second device 24b. As a result, the safety of the gas supply device 10A and the processing device 100 can be improved.
[0151] Further, the first gas stored in the first container 20 can also be a gas that has corrosiveness. At this time, since the leaked first gas can be inhibited from contacting the first device 24a and the second device 24b, corrosion of the first device 24a and the second device 24b can be prevented. Here, as the gas that has corrosiveness, for example, a gas containing chlorine, a gas containing fluorine can be cited, but the present application is not limited thereto.
[0152] Further, in the gas supply device 10A, the second container housing chamber 35 is formed by partitioning the inside of the housing 11 with the second partition wall 15. Therefore, the flammable gas cylinder 20a, the flammable gas flow path 22a, the first nonflammable gas flow path 23a, the second nonflammable gas flow path 23b, the third nonflammable gas flow path 23c, the first nonflammable gas cylinder 21a, the second nonflammable gas cylinder 21b, and the third nonflammable gas cylinder 21c are housed in the first container housing chamber 31, the flow path housing chamber 32, and the second container housing chamber 35, respectively, which are formed by partitioning the inside of the housing 11.
[0153] Further, in the gas supply device 10A, the flow path housing chamber 32 is divided into a first flow path region 33 and a second flow path region 34. The first flow path region 33 collects a portion of the first flow path 22, and the second flow path region 34 collects a portion of the second flow path 23 (a portion of the first nonflammable gas flow path 23a, the second nonflammable gas flow path 23b, and the third nonflammable gas flow path 23c in the present embodiment).
[0154] Further, the first flow path region 33 is located on the downstream side in the path of the exhaust gas of the flow path housing chamber 32, compared to the second flow path region 34. In addition, the gas within the flow path housing chamber 32 is forcibly exhausted from the exhaust gas conduit 16 connected to the upper side of the first flow path region 33.
[0155] Therefore, even in the case where the first gas leaks from the first flow path region 33, the gas does not escape outside the housing 11 through the second flow path region 34 and the exhaust gas conduit 16 disposed on the upper side of the housing 11.
[0156] That is, the first gas that leaks from the first flow path region 33 can be inhibited from invading the second flow path region 34 on the upstream side in the exhaust gas path. Therefore, in the case where the first gas is a gas having flammability, the first gas can be inhibited from contacting the second device 24b and igniting. Further, in the case where the second gas is a gas having corrosiveness, the corrosion of the piping member located in the second flow path region 34, the second device 24b, and the like can be inhibited.
[0157] Further, in the gas supply device 10A, the first flow path region 33 is divided by the partition member 17 into a device arrangement region 36a containing the first device 24a and a device non-arrangement region 36b not containing a potential ignition source. Therefore, in the case where the first gas is a gas having flammability, even if the first gas leaks in the device non-arrangement region 36b, the flammable gas can be inhibited from flowing to the device arrangement region 36a containing the potential ignition source. Therefore, the safety when the first gas leaks from the first flow path 22 can be further improved.
[0158] Further, even in the case where the first gas is a gas having corrosiveness, since the gas supply device 10A is provided with the partition member 17, the first gas can be inhibited from contacting the first device 24a and the second device 24b. Therefore, the corrosion of the first device 24a and the second device 24b can be inhibited.
[0159] Figure 7 A schematic view of a gas supply device 10B that is a modification example of the gas supply device 10A is shown.
[0160] The main change point of the gas supply device 10B compared to the gas supply device 10A is that all of the first container 20 and the second container 21 are housed within the housing 11. The main change point is described below, and for the same constituent elements as the gas supply device 10A, the same symbols are used and the description thereof is omitted.
[0161] As Figure 7As shown, in this modification, the gas supply device 10B has a third partition wall 18 that partitions the first container housing chamber 31 into two regions in addition to the first partition wall 14. The gas supply device 10B has a first housing region 31a and a second housing region 31b formed by the third partition wall 18.
[0162] The first container 20 is arranged in each of the first housing region 31a and the second housing region 31b. The first container 20 arranged in the first housing region 31a stores a gas having flammability, and the first container 20 arranged in the second housing region 31b stores a gas having corrosiveness. Hereinafter, the first container 20 arranged in the first housing region 31a is also referred to as a flammable gas container 20b, and the first container 20 arranged in the second housing region 31b is also referred to as a corrosive gas container 20c.
[0163] Here, the first container 20 that stores a gas having corrosiveness and different in gas species can be arranged in each of the first housing region 31a and the second housing region 31b. For example, the first container 20 arranged in the first housing region 31a can store a chlorine-containing gas, and the first container 20 arranged in the second housing region 31b can store a fluorine-containing gas.
[0164] In this modification, a vent (not shown) is also formed below the first housing region 31a and the second housing region 31b. The gas in the first housing region 31a and the second housing region 31b is forcibly discharged to the outside from the exhaust conduit 16 through the first vent 13d.
[0165] Further, two second containers 21 are housed in the flow path housing chamber 32, and the gas in the flow path housing chamber 32 is forcibly discharged to the outside from the exhaust conduit 16 in sequence through the second vent 14d and the first vent 13d.
[0166] Two first flow paths 22 each having one end connected to the flammable gas container 20b and the corrosive gas container 20c are arranged in the flow path housing chamber 32 so as to be partially gathered in the first flow path region 33. Further, two second flow paths 23 each connected to the two second containers 21 arranged in the flow path housing chamber 32 are arranged so as to be partially gathered in the second flow path region 34.
[0167] In this modification, the first flow path region 33 is located on the downstream side of the second flow path region 34 in the exhaust path of the flow path housing chamber 32, and even if the first gas leaks in the flow path housing chamber 32, the gas does not stay in the flow path housing chamber 32 but is directly discharged to the outside. Thus, the leaked first gas can be prevented from contacting the equipment arranged in the flow path housing chamber 32.
[0168] Moreover, the present application is not limited to the described embodiments and described modifications, but various changes can be made thereto without departing from the scope of the present application.
Claims
1. A gas supply device that supplies a plurality of gases to a plasma generation chamber in which plasma is generated internally, the gas supply device comprising: a first container that stores a first gas having flammability or corrosiveness; a second container that stores a second gas that is a different gas species from the first gas; a first flow path through which the first gas flows; a second flow path through which the second gas flows; and a housing that has a first container housing chamber that houses the first container and a flow path housing chamber that houses the first flow path and the second flow path, the housing having one or more partition walls that partition an interior of the housing into a plurality of spaces, the first container housing chamber and the flow path housing chamber being partitioned by the partition walls, the first container housing chamber and the flow path housing chamber being both forcibly ventilated. The housing further has a second container housing chamber that is partitioned by the partition walls and houses the second container. The flow path housing chamber has a first flow path region that collects the first flow path and a second flow path region that collects the second flow path. The first flow path region is located on a downstream side of the second flow path region in a path of ventilation of the flow path housing chamber. The flow path housing chamber is forcibly ventilated from a more downstream side of the first flow path region in the path. The first gas has flammability. The first flow path region has a first device that constitutes the first flow path and belongs to a potential ignition source disposed therein. The second flow path region has a second device that constitutes the second flow path and belongs to a potential ignition source disposed therein.
5. The gas supply device according to claim 4, further comprising one or more partition members that partition the first flow path region into a region in which the first device is disposed and a region in which the first device is not disposed.
2. The gas supply apparatus according to claim 1, wherein 6. A processing device that performs a predetermined process on an object, the processing device comprising a plasma generation chamber in which plasma is generated internally and a gas supply device that supplies a plurality of gases to the plasma generation chamber, the gas supply device comprising: a first container that stores a first gas having flammability or corrosiveness; a second container that stores a second gas that is a different gas species from the first gas; a first flow path through which the first gas flows; a second flow path through which the second gas flows; and a housing that has a first container housing chamber that houses the first container and a flow path housing chamber that houses the first flow path and the second flow path, the housing having one or more partition walls that partition an interior of the housing into a plurality of spaces, the first container housing chamber and the flow path housing chamber being partitioned by the partition walls, the first container housing chamber and the flow path housing chamber being both forcibly ventilated.
3. The gas supply apparatus according to claim 1 or 2, wherein 4. The gas supply apparatus according to claim 3, wherein
Citation Information
Patent Citations
Gas cabinet assembly with sorbent-based gas storage and delivery system
JP2003532034A