Photoelectric device with Raman temperature sensing characteristic and preparation method thereof
By fabricating a 'star-petal sphere' structure optoelectronic device, temperature measurement is achieved by utilizing the vibrational frequency change of the N≡C bond in isonitrile benzene molecules. This solves the problems of low signal-to-noise ratio, simple detection principle, and insufficient spatial resolution of traditional Raman temperature sensors, and realizes a temperature sensing effect with high sensitivity and high integration.
Patent Information
- Application Number
- CN202511527280.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-24
- Publication Date
- 2026-01-20
AI Technical Summary
Traditional Raman temperature sensors suffer from low signal-to-noise ratio, simple detection principle, low spatial resolution, and insufficient integration, resulting in low sensitivity and difficulty in meeting the needs of high precision and diverse applications.
Optoelectronic devices with a 'star-petal sphere' structure were fabricated using polystyrene microsphere self-assembly technology. A nanoscale periodic array was formed by RIE and ICP etching, and a gold film was deposited on the surface to adsorb isonitrile molecules. The temperature was measured by utilizing the temperature-dependent vibrational frequency of the N≡C bond in the isonitrile molecules.
It achieves high sensitivity, nanometer-level spatial resolution and high integration of temperature sensing, with a temperature sensing sensitivity of 0.092 cm-1/℃, a Raman signal intensity increase of 9 times, and a spatial resolution of nanometer level, which is significantly better than traditional fiber Raman sensors.
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Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the field of optical functional material design and micro-nano processing technology, and particularly relates to an optoelectronic device with Raman temperature sensing characteristics and a preparation method thereof BACKGROUND
[0002] Traditional Raman temperature sensors face the following main technical bottlenecks in application. First, low signal-to-noise ratio is a major problem. Traditional fiber Raman temperature measurement mainly relies on the intensity ratio (I as / I s ) of anti-Stokes and Stokes light, which has an exponential relationship with temperature and has high sensitivity. However, the signal mainly comes from the Raman scattering of silica molecules on the inner wall of the optical fiber, and the Raman scattering cross-section of silica molecules is small, resulting in weak signal and low signal-to-noise ratio, which affects the accuracy and precision of temperature measurement.
[0003] The detection principle of traditional Raman temperature sensors is relatively single, and the temperature measurement relies on the emission of laser pulses and the analysis of the intensity ratio of anti-Stokes light and Stokes light. Although this method can calculate the temperature through mathematical relationship, its principle is too single and lacks more rich temperature sensing mechanism. This makes it difficult for the existing technology to adapt to diversified application requirements, especially in situations that require high sensitivity and high precision.
[0004] The fiber Raman temperature sensor has a low spatial resolution. Since the size of the optical fiber is usually microns, it can only reflect the average temperature of the surrounding environment and is difficult to measure the temperature with high spatial resolution, which limits its application in complex environments. For example, it cannot accurately measure the temperature change in a small local area, which cannot meet the requirements of some fine operations or temperature monitoring in micro-environment.
[0005] And there are limitations in current technology. The micron-level size of the optical fiber leads to a loose distribution of plasmonic hot spots, which reduces the stability of the Raman signal. Compared with nanoscale size, micron-level size is not conducive to nanoscale integration, which limits the integration and sensitivity of traditional fiber Raman sensors.
[0006] Current improvement schemes include using high-performance high-power lasers to enhance Raman signals, which improves sensitivity but is accompanied by high cost, nonlinear effects and damage risks. There are also attempts to reduce the size of the sensing unit through distributed sensing, but the effect is not good and the obtained signal is still weak. Hybrid integration or modular technology improves system performance by compactly assembling discrete modules, but due to the physical limitations of integration, the cost reduction space is limited, and it is difficult to completely solve the technical bottlenecks.
[0007] Therefore, the traditional Raman temperature sensor cannot obtain a hot spot signal with strict periodicity due to the process limitation of the optical fiber, the single detection principle, the weak Raman signal, the low sensitivity, and the low spatial resolution. SUMMARY
[0008] In view of the problems in the prior art, the first aspect of the present application provides a method for preparing an optoelectronic device with Raman temperature sensing characteristics, comprising the following steps: S1: mixing water, alcohol and polystyrene microspheres to obtain a polystyrene microsphere mixture; S2: adding water to a container in an inclined state, then adding the polystyrene microsphere mixture prepared in step S1 from the high side of the container, forming a polystyrene microsphere array monolayer film on the water surface, placing a silicon wafer under the polystyrene microsphere array monolayer film, and then removing the water in the container, so that the polystyrene microsphere array monolayer film falls on the silicon wafer, and drying to obtain a silicon substrate with a polystyrene microsphere array formed on the surface; S3: etching the silicon substrate with a polystyrene microsphere array formed on the surface by RIE etching and ICP etching to form a "star sector ball" structure; S4: depositing a gold film on the surface of the "star sector ball" structure by a magnetron sputtering process; S5: adsorbing isonitrile benzene molecules on the gold film of the "star sector ball" structure.
[0009] In some embodiments of the method for preparing an optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the volume of polystyrene microspheres added to 1ml of water in step S1 is 0.40-0.60ml.
[0010] In some embodiments of the method for preparing an optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the volume of alcohol added to 1ml of water in step S1 is 0.5ml-0.7ml.
[0011] In some embodiments of the method for preparing an optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the alcohol in step S1 is selected from any one or mixture of methanol, ethanol, n-propanol and isopropanol.
[0012] In some embodiments of the method for preparing an optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the particle size of the polystyrene microspheres in step S1 is 300-500nm.
[0013] In some embodiments of the method for preparing an optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the polystyrene microsphere mixture is added in the form of drops in step S2.
[0014] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the water in step S2 is deionized water.
[0015] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the polystyrene microsphere array in step S2 is arranged on the surface of the silicon substrate in a periodic array with a period of 500 nm.
[0016] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the RIE etching in step S3 is performed in an oxygen atmosphere.
[0017] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the ICP etching in step S3 is performed in a sulfur hexafluoride atmosphere.
[0018] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the parameters of the RIE etching and the ICP etching in step S3 are as follows: a pressure of 0.4-0.6 Pa, an ICP power of 200-300 W, an RF power of 10-20 W, an oxygen flow rate of 4-6 SCCM, a sulfur hexafluoride flow rate of 20-40 SCCM, a temperature of 15-30℃, and an etching time of 10-20 seconds.
[0019] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the thickness of the gold film in step S4 is 40-70 nm.
[0020] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the "star petal ball" structure obtained in step S3 comprises, from top to bottom, a polystyrene microsphere, a silicon hexagonal prism, and a triangular silicon groove, wherein the sidewall of the silicon hexagonal prism is part of the sidewall of the triangular silicon groove.
[0021] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the "star petal ball" structure has a periodicity that can be adjusted, and a bow-shaped groove is formed between two adjacent balls.
[0022] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing properties, the "star petal ball" structure obtained in step S4 comprises, from top to bottom, a polystyrene microsphere, a silicon hexagonal prism, and a triangular silicon groove, wherein the sidewall of the silicon hexagonal prism is part of the sidewall of the triangular silicon groove.
[0023] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the thickness of the gold film layer on the surface of the polystyrene microspheres and the thickness of the gold film layer on the surface of the silicon hexagonal prism are 40-70 nm.
[0024] In some embodiments of the method for preparing the optoelectronic device with Raman temperature sensing characteristics according to the first aspect, the gold film layer on the surface of the triangular silicon groove has a non-uniform thickness, wherein the thickness of the gold film at the low-lying part of the groove is 60-80 nm, the thickness of the gold film on the sidewall of the groove is 40-60 nm, and the depth of the triangular silicon groove is 140-170 nm.
[0025] The second aspect of the application provides an optoelectronic device with Raman temperature sensing characteristics prepared by the method according to any one of the first aspect.
[0026] In the application, PS is polystyrene; the polystyrene microspheres are referred to as ps microspheres; and RF is the bias power.
[0027] Advantages of the application: The optoelectronic device with the “star petal ball” structure prepared by the application has high temperature sensing sensitivity: the temperature sensing sensitivity can be as high as 0.092 cm -1 / ℃, which is higher than that of carbon nanotubes (0.0288 cm -1 / ℃) using the same Raman shift as the observation quantity, and the temperature sensor has high sensitivity, high integration and high stability, and all the indicators are significantly better than traditional Raman temperature sensors based on optical fibers.
[0028] Compared with the equal-thickness pure gold metal particle layer, the intensity is improved by 9 times, and the ps microsphere self-assembly technology is used to create a large area of dense hot spots, and the hot spot periodicity is created from nothing. The stretching vibration frequency (Raman shift) of the isonitrile benzene molecule N≡C bond has the characteristic of changing with temperature, which is different from the traditional Raman temperature sensing “anti-Stokes / Stokes peak intensity ratio (I as / I sThe principle of temperature measurement utilizes the characteristic that the stretching vibration frequency of the N≡C bond in isonitrile molecules changes with temperature to reflect the surface temperature of isonitrile molecules. The spatial resolution reaches the nanometer level, far superior to the micrometer level of traditional fiber Raman temperature sensing, resulting in a significantly higher spatial resolution. This led to the successful construction of a multi-scale three-dimensional periodic structure of ordered composite "nanosphere-micropit" structures. Surface plasmon hotspots exist between the "sphere-surface" and "micropit-micropit" elements, achieving precise spatial alignment and integration. This unique "protrusion-recession" composite configuration, through the synergistic effect of nanounits and the inch-scale whole, is expected to produce enhanced optical effects, highly efficient catalytic performance, and excellent structural stability not found in single structures, providing a new platform for designing next-generation photonic devices, sensors, and catalytic interfaces. Attached Figure Description
[0029] Figure 1 A structural model diagram of the "star-petal sphere" nanostructure; Figure 2 A scanning electron microscope image of a "star-lobed sphere" nanostructure; Figure 3 This is a schematic diagram of the process of Embodiment 1 of the present invention; Figure 4 This is the LSPR resonance spectrum; Figure 5 This is a spectrum of SERS enhancement effect; Figure 6 Raman spectra of 'star-lobed sphere' structure optical devices at different temperatures; Figure 7 The red-blue shift diagram shows the temperature dependence of the isocyanate characteristic peak. Figure 8 This is a scatter plot showing the relationship between the position of the isocyanate characteristic peak and temperature. Detailed Implementation
[0030] The following examples further illustrate the above-described content of the present invention, but it should not be construed as limiting the scope of the subject matter of the present invention to the following examples. All technologies implemented based on the above-described content of the present invention fall within the scope of the present invention.
[0031] Example 1 The fabrication process of the "star-lobed sphere" optoelectronic device structure is as follows: S1: Take 120 μL of deionized water, 81 μL of anhydrous ethanol, and 70 μL of polystyrene microspheres with a diameter of 500±10 nm. Mix them and place them in an ultrasonic cleaner for 40 seconds to prepare a PS microsphere solution. The 120ml culture dish was sequentially cleaned by ultrasonic cleaning (power 100W, frequency 40kHz) using 80ml water, 70ml anhydrous ethanol, and 50ml acetone, each for 4 minutes. Then, 50ml of a mixture of 95wt% sulfuric acid and 30% hydrogen peroxide (V 硫酸 :V 过氧化氢 =3:1) was added to the culture dish, and the mixture was kept at 100-120°C for 10 minutes. The mixture was then removed, and the culture dish was cleaned with new deionized water to obtain a culture dish with a clean surface. S2: A 3mm spacer was placed on one side of the bottom of the culture dish to make the culture dish inclined, and 90ml of deionized water was added. Then, the ps microsphere solution prepared in step S1 was added dropwise to the surface of the deionized water from the higher side of the culture dish at a rate of 40μL / min using a microsyringe. Due to the self-adsorption of the PS microspheres, a monolayer film of PS ball array was finally formed on the surface of the deionized water. A tin foil protection ring was used to enclose the film to prevent damage to the film. Then, the cleaned silicon wafer substrate was slowly placed under the PS ball monolayer film along the bottom of the protection ring. The deionized water in the culture dish was slowly pumped out using a peristaltic pump. As the water was pumped out, the polystyrene microsphere array film fell onto the substrate. Finally, after drying treatment, polystyrene microspheres (ps microspheres) formed a periodic array of polystyrene microspheres with a period of 500nm on the surface of the silicon substrate. S3: The periodic array of polystyrene microspheres with a period of 500nm was etched using RIE etching (under oxygen) and ICP etching (under sulfur hexafluoride), with etching parameters of gas pressure 0.5Pa, ICP power 250w, RF power 15W, oxygen 5SCCM, sulfur hexafluoride 30SCCM, temperature 20°C, and etching time 15 seconds. After etching, a "star petal ball" structure was obtained.
[0032] S4: A layer of gold film with a thickness of 60nm was deposited on the surface of the "star petal ball" structure using a magnetron sputtering process.
[0033] The "star petal ball" structure optoelectronic device prepared in Example 1 is a micro-nano structure, and is named as such because the structure shape is like a star petal uniformly decorating around a ball. The "star petal ball" structure optoelectronic device comprises, from top to bottom, a gold thin film layer on the surface of a polystyrene microsphere (hereinafter referred to as a ps microsphere), the ps microsphere, a gold thin film layer on the surface of a silicon hexagonal prism, the silicon hexagonal prism, a gold thin film layer on the surface of a triangular silicon trench, and the triangular silicon trench. The sidewall of the silicon hexagonal prism is part of the sidewall of the triangular silicon trench. The star petal ball structure has a periodicity that can be adjusted, and a bow-shaped trench is between two adjacent balls.
[0034] The specific parameters of each part of the "star petal ball" micro-nano structure prepared are as follows: (1) ps microspheres surface gold thin film layer and ps microspheres (top): the thickness of gold film is 60 nm; the diameter of ps microspheres (polystyrene microspheres) is 350 nm; (2) Silicon hexagonal prism surface gold thin film layer and silicon hexagonal prism (middle): the thickness of gold film is 60 nm; the hexagonal top surface of the silicon hexagonal prism is a regular hexagon with a side length of 250 nm; (3) Triangular silicon groove surface gold thin film layer and triangular silicon groove (bottom): the gold film on the surface of the triangular silicon groove has a non-uniform thickness, with the thickest gold film at the low-lying part of the groove, about 70 nm thick, and the thinnest gold film on the sidewall of the groove, about 50 nm thick; the depth of the triangular silicon groove is about 150 nm.
[0035] Example 2: SERS property verification The "star sector ball" structure and the gold film with equal thickness (60 nm) obtained in Example 1 were respectively immersed in 5 ml of an ethanol solution of isocyanide benzene with a concentration of 1 mM. After standing for one day, the solution was poured out, and the sample was taken out. After the sample was dried, adsorption was completed, and the "star sector ball" structure and the gold film with equal thickness to which isocyanide benzene molecules were adsorbed were obtained, respectively.
[0036] Under the conditions of an excitation wavelength of 638 nm, a laser power of 0.24 mW, and a spectrum sampling time of 20 s, the Raman spectrum of isocyanide benzene molecules was obtained. It can be seen that, under the irradiation of 638 laser, the Raman spectrum corresponding to the "star sector ball" structure has a significantly stronger Raman signal than the Raman spectrum corresponding to the gold film with equal thickness. The peak intensity of the Raman spectrum corresponding to the "star sector ball" structure at a displacement of 2200 (isocyanide group) is 9 times stronger than the peak intensity of the Raman spectrum corresponding to the gold film with equal thickness at a displacement of 2200 (isocyanide group), indicating that the "star sector ball" structure has obvious SERS properties. (See Figure 5 ) Through the SERS enhancement effect, the "star sector ball" structure can effectively amplify the Raman signal of isocyanide benzene molecules, which provides an experimental basis for further studying its temperature response properties.
[0037] The principle of using isocyanide benzene (PIC) molecules for temperature sensing is mainly based on the fact that the stretching vibration frequency (Raman displacement) of the N≡C bond has a temperature-dependent characteristic when the PIC molecules are adsorbed on the surface of gold nanoparticles. Specifically, the PIC molecules are vertically or obliquely adsorbed on the surface of Au NPs through the N≡C bond. At low temperatures, the molecules tend to adopt a more vertical orientation (θ is smaller), and the effective electron donation of the electronic antibonding orbital of the N≡C bond to the metal Au is enhanced, resulting in an increase in the bond strength of the N≡C bond and a higher vibration frequency (about 2200 cm -1, which is much higher than 2130 cm -1 As the temperature increases, the thermal motion of the molecules intensifies, and more PIC molecules are converted into tilted orientation (θ increases). The increase of the tilt angle weakens the electron donation effect, leading to the weakening of the N≡C bond strength and the red shift of the vibration frequency. Therefore, as long as the position of the Raman characteristic peak of the N≡C bond of the picryl cyanide molecule at different temperatures can be determined, the purpose of temperature sensing can be achieved.
[0038] It is worth mentioning that the Raman scattering signal of the picryl cyanide molecule itself is extremely weak, and it cannot be directly collected by Raman spectrum. The surface of the "star petal ball" structure optoelectronic device designed and prepared has a large number of surface plasmonic metal particles (gold), and in addition, it has a tip-tip structure feature, which makes it more surface plasmonic hot spot characteristic. The weak Raman signal of the picryl cyanide molecule itself can be amplified by six orders of magnitude by using this surface plasmonic characteristic, so that the position of the Raman characteristic peak of the picryl cyanide molecule at different temperatures can be observed.
[0039] Example 3 LSPR resonance wavelength determination The "star petal ball" structure of Example 1 of the present application was detected by an angle-resolved spectral acquisition system (equipped with a mercury lamp and a deuterium lamp light source, a motor-controlled incident / emission arm, and a five-dimensional precision adjustment platform) for in-situ reflection spectrum detection at room temperature, and it was determined that it has a local surface plasmon resonance (LSPR) mode near 638 nm laser (see Figure 4 ).
[0040] Example 4 Raman temperature sensing characteristics determination of "star petal ball" structure optoelectronic device Raman spectrometer related parameters: The full-automatic Raman spectrometer XploRA is equipped with an excitation wavelength of 638 nm, a laser power of 0.24 mW, and a long working distance of 50x objective lens (NA=0.55), which obtains a laser spot with a diameter of 2 microns on the sample, and the integration time is 20s.
[0041] The Raman temperature sensing characteristic "star sector ball" structure optoelectronic device is placed in a self-made variable temperature Raman cell (a self-made Raman cell for temperature-dependent research, which is provided with gas inlet and outlet, and water inlet and outlet to control the temperature. The sample is heated by a platinum wire. The temperature is controlled by a programmable temperature controller, and the Raman spectrum of the sample can be measured at different temperatures), the environment is set to 250K, the Raman spectrum of the "star sector ball" structure optical device (adsorbing 1mM isocyanide benzene molecules) is measured, then the temperature is raised to 260K, 270K, 280K, 290K, 300K, 310K, 320K, 330K, and the Raman spectrum of the "star sector ball" structure optical device (adsorbing 1mM isocyanide benzene molecules) is measured at these temperatures, respectively, and then the temperature is lowered to 320K, 310K, 300K, 290K, 280K, 270K, 260K, 250K, and the Raman spectrum of the "star sector ball" structure optical device (adsorbing 1mM isocyanide benzene molecules) is measured at these temperatures, respectively, and the results are shown in Figure 6 .
[0042] As shown in Figure 7 , when the temperature rises from 250K to 330K, the position of the characteristic peak of isocyanide red shifts continuously, and when the temperature drops from 330K to 250K, the position of the characteristic peak of isocyanide blue shifts continuously. This is because the orientation of isocyanide changes with temperature. Through theoretical calculation, it can be known that there are five tilt angles of isocyanide. At room temperature, the adsorption energy of the tilt angle of this species is less than 50meV, which means that the five modes can coexist. At low temperature, the number of isocyanide in the vertical direction connected to the metal is the largest, and the effective donation of electrons on the antibonding orbital to the metal results in larger bond strength of isocyanide, resulting in larger frequency at this time, and the characteristic peak of isocyanide red shifts. When the temperature rises, the five orientations change to large tilt angles, and the electron donation is less, resulting in smaller frequency at this time, and the characteristic peak of isocyanide blue shifts.
[0043] As shown in Figure 8 , taking the position of the isocyanide characteristic peak at each temperature as the ordinate and the corresponding temperature as the abscissa, a scatter plot of the position of the isocyanide characteristic peak with respect to the temperature is drawn. For the temperature rising process, the temperature range from 250K to 310K is taken, and the sensitivity of the rising process is 0.092cm -1 / ℃, for the temperature dropping process, the temperature range from 330K to 250K is taken, and the sensitivity of the dropping process is 0.066cm -1 / ℃, which is significantly higher than the sensitivity of 0.0288cm -1 / ℃ of the carbon nm tube or silicon in the literature, which is very important for detecting small temperature changes, especially in the physiological process of living cells.
[0044] The above description of the embodiments is only used to help understand the method of the present application and its core idea. It should be noted that, for those skilled in the art, some improvements and modifications can be made to the present application without departing from the principles of the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.
Claims
1. A method for fabricating an optoelectronic device with Raman temperature sensing characteristics, characterized in that, The method comprises the steps of: S1: mixing water, alcohol and polystyrene microspheres to obtain a polystyrene microsphere mixture; S2: adding water to a container in an inclined state, then adding the polystyrene microsphere mixture prepared in step S1 from the high side of the container, forming a polystyrene microsphere array monolayer film on the water surface, placing a silicon wafer under the polystyrene microsphere array monolayer film, removing the water in the container, and drying the polystyrene microsphere array monolayer film on the silicon wafer to obtain a silicon substrate with a polystyrene microsphere array on the surface; S3: etching the silicon substrate with a polystyrene microsphere array on the surface by RIE etching and ICP etching to form a "star sector ball" structure; S4: depositing a gold film on the surface of the "star sector ball" structure by magnetron sputtering; S5: attaching isonitrile benzene molecules to the gold film on the "star sector ball" structure.
2. The method for fabricating an optoelectronic device with Raman temperature sensing characteristics according to claim 1, characterized in that, In step S1, the volume of polystyrene microspheres added to 1 ml of water is 0.40-0.60 ml; and / or, in step S1, the volume of alcohol added to 1 ml of water is 0.5-0.7 ml; and / or, in step S1, the alcohol is selected from any one or mixture of methanol, ethanol, n-propanol and isopropanol; and / or, in step S1, the particle size of the polystyrene microspheres is 300-500 nm.
3. The method of claim 1, wherein the optoelectronic device is a Raman temperature sensor. In step S2, the polystyrene microsphere mixture is added dropwise; and / or, in step S2, the water is deionized water; and / or, in step S2, the polystyrene on the surface of the polystyrene microsphere array on the silicon substrate is a periodic array with a period of 500 nm. 4. The method of claim 1, wherein the optoelectronic device is a Raman temperature sensor. In step S3, the RIE etching is performed in an oxygen atmosphere; and / or, in step S3, the ICP etching is performed in a sulfur hexafluoride atmosphere.
5. The method of claim 1, wherein the optoelectronic device is a Raman temperature sensor. In step S3, the parameters of RIE etching and ICP etching are as follows: gas pressure 0.4-0.6 Pa, ICP power 200-300 W, RF power 10-20 W, oxygen flow rate 4-6 SCCM, sulfur hexafluoride flow rate 20-40 SCCM, temperature 15-30°C, and etching time 10-20 seconds.
6. The method of claim 1, wherein the optoelectronic device is a Raman temperature sensor. The "star sector ball" structure obtained in step S3 comprises, from top to bottom, polystyrene microspheres, silicon hexagonal prisms, and triangular silicon grooves, wherein the sidewalls of the silicon hexagonal prisms are part of the sidewalls of the triangular silicon grooves.
7. The method of claim 1, wherein the optoelectronic device is a Raman temperature sensor. The "star sector ball" structure has a periodic adjustable characteristic, and a bowknot groove is formed between two adjacent balls.
8. The method for fabricating an optoelectronic device with Raman temperature sensing characteristics according to claim 1, characterized in that, The "star sector ball" structure obtained in step S4 comprises a gold film layer on the surface of the polystyrene microspheres, polystyrene microspheres, a gold film layer on the surface of the silicon hexagonal prisms, silicon hexagonal prisms, a gold film layer on the surface of the triangular silicon grooves, and triangular silicon grooves.
9. The method of claim 8, wherein the optoelectronic device is a Raman temperature sensor. 8 The thickness of the gold film layer on the surface of the polystyrene microspheres and the gold film layer on the surface of the silicon hexagonal prisms is 40-70 nm; and / or, the gold film layer on the surface of the triangular silicon grooves has a non-uniform thickness, wherein the thickness of the gold film at the low-lying part of the groove is 60-80 nm, the thickness of the gold film on the sidewall of the groove is 40-60 nm, and the depth of the triangular silicon grooves is 140-170 nm.
10. An optoelectronic device with Raman temperature sensing characteristics, prepared by the method of any one of claims 1-9.