Space heat dissipation structure of silicon controlled rectifier gate resistance plate

Abstract

The invention relates to the technical field of silicon controlled gate resistance plates, in particular to a space heat dissipation structure of a silicon controlled gate resistance plate. A space heat dissipation structure of a silicon controlled rectifier gate pole resistance plate comprises the silicon controlled rectifier gate pole resistance plate and a driving plate, a gap is arranged between the silicon controlled rectifier gate pole resistance plate and the driving plate, and the silicon controlled rectifier gate pole resistance plate is electrically connected with the driving plate through a connecting assembly. According to the invention, the gap is arranged between the silicon controlled rectifier gate pole resistance plate and the driving plate, so that the silicon controlled rectifier gate pole resistance plate and the driving plate are separately arranged, the silicon controlled rectifier gate pole resistance plate and the driving plate are far away from each other, the influence of heat on each other during heat dissipation is reduced, and the heat dissipation effect and the heat dissipation efficiency are improved; and the service lives of the silicon controlled gate resistance plate and the driving plate are further ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon controlled rectifier gate resistor board, and particularly relates to a silicon controlled rectifier gate resistor board space heat dissipation structure. BACKGROUND

[0002] In the field of electronic technology, a drive board is often used as a core control unit in a power electronic converter. The drive board is usually a printed circuit board, also known as a PCB board, on which a plurality of precise electronic components are integrated.

[0003] The existing drive board mainly adopts an integrated design, in which the silicon controlled rectifier gate resistor and other components are placed on the same PCB board. However, due to the local overheating of the silicon controlled rectifier gate resistor, the integrated design will cause the other components on the drive board to overheat, which not only reduces the service life of the components, but also causes safety risks during the operation of the components. SUMMARY

[0004] In order to overcome the shortcomings mentioned in the background, the present application provides a silicon controlled rectifier gate resistor board space heat dissipation structure.

[0005] The silicon controlled rectifier gate resistor board space heat dissipation structure comprises a silicon controlled rectifier gate resistor board and a drive board, a gap is arranged between the silicon controlled rectifier gate resistor board and the drive board, and the silicon controlled rectifier gate resistor board and the drive board are electrically connected through a connecting assembly.

[0006] As an embodiment, the connecting assembly comprises resistor board pin groups arranged on the silicon controlled rectifier gate resistor board and drive board pin groups arranged on the drive board, the resistor board pin groups and the drive board pin groups correspond to each other, and at least one resistor board pin group is permanently fixedly connected with the corresponding drive board pin group.

[0007] As an embodiment, at least one resistor board pin group is fixedly connected with the corresponding drive board pin group by welding.

[0008] As an embodiment, in each resistor board pin group and the corresponding drive board pin group which are not permanently fixed, one of the resistor board pin group and the drive board pin group is a pin header, and the other is a pin.

[0009] As an embodiment, in each resistor board pin group and the corresponding drive board pin group which are not permanently fixed, the resistor board pin group is the pin header, and the drive board pin group is the pin, the pin header is fixedly installed on the silicon controlled rectifier gate resistor board, the pin is fixedly installed on the drive board, and a pin hole for plugging the corresponding pin is formed in the pin header.

[0010] As an embodiment, the resistance plate needle group and the driving plate needle group are each provided with three, one of the resistance plate needle groups is welded and fixed with the corresponding driving plate needle group, and the remaining resistance plate needle groups are inserted with the corresponding driving plate needle groups.

[0011] As an embodiment, the silicon controlled gate resistance plate is arranged in parallel with the driving plate.

[0012] As an embodiment, the axis of the needle is perpendicular to the plane of the silicon controlled gate resistance plate and the driving plate.

[0013] As an embodiment, the connection distance between the silicon controlled gate resistance plate and the driving plate is greater than 10 mm.

[0014] As an embodiment, the silicon controlled gate resistance plate is provided with a ventilation hole for heat dissipation.

[0015] The beneficial effects of the present application are: The present application sets a gap between the silicon controlled gate resistance plate and the driving plate, so that the silicon controlled gate resistance plate and the driving plate are arranged separately, and the silicon controlled gate resistance plate and the driving plate are away from each other, reducing the influence of heat on each other during heat dissipation, improving the heat dissipation effect and efficiency, and further ensuring the service life of the silicon controlled gate resistance plate and the driving plate.

[0016] The other technical solutions of the present application can also achieve the following technical effects: By setting the resistance plate needle group and the corresponding driving plate needle group, at least one resistance plate needle group is permanently connected with the corresponding driving plate needle group, improving the overall stability and being suitable for the vibrating environment.

[0017] By inserting the needle into the corresponding busbar through the needle hole, the busbar limits the corresponding needle, and further limits the silicon controlled gate resistance plate and the driving plate, further improving the structural stability and being more suitable for the external vibrating environment.

[0018] By setting the ventilation hole on the silicon controlled gate resistance plate, the ventilation effect is improved, the heat between the silicon controlled gate resistance plate and the driving plate can be discharged from the ventilation hole, and the electronic elements on the driving plate are not affected by the excessive accumulation of heat between the silicon controlled gate resistance plate and the driving plate. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 The position relationship diagram of the silicon controlled gate resistance plate and the driving plate in the embodiment of the present application is shown. Figure 2 The position relationship diagram of the resistance plate needle group and the driving plate needle group in the embodiment of the present application is shown. Figure 3 This is a three-dimensional structural diagram of the resistor plate pin header group as a female header and the drive plate pin header group as a pin header in an embodiment of the present invention.

[0020] In the attached diagram, the following are the reference numerals: 1, thyristor gate resistor plate; 101, ventilation hole; 2, driver board; 3, connecting assembly; 301, resistor plate pin header group; 302, driver board pin header group. Detailed Implementation

[0021] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0022] A spatial heat dissipation structure for a silicon controlled rectifier gate resistor plate, such as Figure 1 As shown, the device includes a thyristor gate resistor plate 1 and a driver plate 2. Electronic components are mounted on the driver plate 2. A gap is provided between the thyristor gate resistor plate 1 and the driver plate 2. The thyristor gate resistor plate 1 is located above the driver plate 2. This gap allows the thyristor gate resistor plate 1 and the driver plate 2 to be separated from each other, thereby reducing the impact of heat on each other during heat dissipation and improving the heat dissipation effect and efficiency of the thyristor gate resistor plate 1 and the driver plate 2. The thyristor gate resistor plate 1 and the driver plate 2 are electrically connected by a connecting component 3.

[0023] In one embodiment, such as Figures 1-3 As shown, the connection assembly 3 includes a resistor plate pin header group 301 and a driver plate pin header group 302. The resistor plate pin header group 301 is disposed on the lower side of the thyristor gate resistor plate 1, and the driver plate pin header group 302 is disposed on the upper side of the driver plate 2. At least one resistor plate pin header group 301 and one driver plate pin header group 302 are provided. The resistor plate pin header group 301 and the driver plate pin header group 302 correspond one-to-one. The thyristor gate resistor plate 1 and the driver plate 2 are electrically connected through the resistor plate pin header group 301 and the driver plate pin header group 302. At least one resistor plate pin header group 301 and the corresponding driver plate pin header group 302 can be connected by bonding, welding or other permanent fixing methods to improve the stability of the connection between the resistor plate pin header group 301 and the corresponding driver plate pin header group 302 and reduce the risk of disconnection between the thyristor gate resistor plate 1 and the driver plate 2.

[0024] In one embodiment, at least one resistor plate pin header group 301 is fixed to the corresponding driver plate pin header group 302 by welding. The welding method can be hot melt welding, so that the welded position can be melted open when needed.

[0025] In one embodiment, such as Figures 1-3As shown, the permanently fixed connection resistance plate pin group 301 and the drive plate pin group 302 are both pin groups and are fixed to each other by hot melt welding. In each resistance plate pin group 301 and the corresponding drive plate pin group 302 that is not permanently fixed, one of the resistance plate pin group 301 and the drive plate pin group 302 is a pin header, and the other is a pin. One end of the pin is connected to the controllable silicon gate resistance plate 1 and the drive plate 2 as a connection end, and the other end of the pin is a plug-in end. One end of the pin header is connected to the controllable silicon gate resistance plate 1 and the drive plate 2 as a connection end, and the other end of the pin header is a plug that matches the corresponding pin connection end. When the pin is plugged into the corresponding pin header, the pin header limits the pin, thereby improving the stability of the controllable silicon gate resistance plate 1 and the drive plate 2 and reducing the impact of a vibrating environment on the stability of the controllable silicon gate resistance plate 1 and the drive plate 2. When the controllable silicon gate resistance plate 1 needs to be replaced, the maintenance personnel need to disconnect the pins that are fixed to each other by heating, then move the controllable silicon gate resistance plate 1 away from the drive plate 2, and then pull out the remaining pins from the corresponding pin headers. Replace the old controllable silicon gate resistance plate 1. When installing the new controllable silicon gate resistance plate 1, first align the pins on the controllable silicon gate resistance plate 1 with the corresponding pin headers, then plug the pins into the corresponding pin headers, and then weld the corresponding pins together by hot melt welding when the pins to be welded reach the welding position.

[0026] In an embodiment, as shown in Figure 3 In each resistance plate pin group 301 and the corresponding drive plate pin group 302 that is not permanently fixed, the resistance plate pin group 301 is a pin header, and the drive plate pin group 302 is a pin. The pin header is fixedly installed on the lower side of the controllable silicon gate resistance plate 1, and the pin is fixedly installed on the upper side of the drive plate 2. A pin hole is formed in the pin header, the axis of the pin hole coincides with the axis of the corresponding pin, and the diameter of the pin hole matches the diameter of the pin, so that the pin can be plugged into the corresponding pin header through the pin hole.

[0027] In an embodiment, as shown in Figures 1-3 The resistance plate pin group 301 and the drive plate pin group 302 are each provided with three pin groups. One of the resistance plate pin groups 301 is located at one end of the lower side of the controllable silicon gate resistance plate 1 and is fixedly connected to the corresponding drive plate pin group 302. The other two resistance plate pin groups 301 are located at the other end of the lower side of the controllable silicon gate resistance plate 1 and are plugged into the corresponding drive plate pin groups 302. The connection lines of the three resistance plate pin groups 301 and the connection lines of the three drive plate pin groups 302 form two equilateral triangles, and the two equilateral triangles are congruent. The triangular distribution improves the stability of the overall structure.

[0028] In an embodiment, the controllable silicon gate resistance plate 1 and the drive plate 2 are arranged in parallel, which facilitates air circulation and improves space utilization.

[0029] In one embodiment, the axis of the pin header is perpendicular to the plane of the thyristor gate resistor plate 1 and the driver plate 2, which improves the space utilization in the vertical direction and at the same time makes the thyristor gate resistor plate 1 protect the driver plate 2, reducing the risk of electronic components on the driver plate 2 being bumped or knocked.

[0030] In one embodiment, the connection distance between the thyristor gate resistor 1 and the driver board 2 is greater than 10mm, so that sufficient ventilation area is reserved between the thyristor gate resistor 1 and the driver board 2 to ensure heat dissipation of electronic components on the driver board 2.

[0031] In one embodiment, such as Figure 2 As shown, the thyristor gate resistor plate 1 is provided with multiple ventilation holes 101. The multiple ventilation holes 101 are equally spaced. The ventilation holes 101 can improve the heat dissipation effect. The heat generated by the drive board 2 when it is working can be discharged through the ventilation holes 101, avoiding heat accumulation between the thyristor gate resistor plate 1 and the drive board 2, ensuring heat dissipation effect and efficiency, and improving the service life of the components.

[0032] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A spatial heat dissipation structure for a silicon controlled rectifier gate resistor plate, characterized in that, The application relates to a thyristor gate resistor board (1) and a driving board (2), wherein a gap is arranged between the thyristor gate resistor board (1) and the driving board (2), and the thyristor gate resistor board (1) and the driving board (2) are electrically connected through a connecting assembly (3).

2. The space heat dissipation structure of a thyristor gate resistor board according to claim 1, wherein, The connecting assembly (3) comprises resistor board pin groups (301) arranged on the thyristor gate resistor board (1) and driving board pin groups (302) arranged on the driving board (2), the resistor board pin groups (301) and the driving board pin groups (302) correspond to each other, and at least one resistor board pin group (301) is permanently fixedly connected with the corresponding driving board pin group (302).

3. The space heat dissipation structure of a thyristor gate resistor board according to claim 2, characterized in that, At least one resistor board pin group (301) is fixedly connected with the corresponding driving board pin group (302) through welding.

4. The space heat radiation structure of a thyristor gate resistor board according to claim 3, wherein In each resistor board pin group (301) and the corresponding driving board pin group (302) which are not permanently fixed, one of the resistor board pin group (301) and the driving board pin group (302) is a pin header, and the other is a pin.

5. The space heat radiation structure of a thyristor gate resistor board according to claim 4, wherein In each resistor board pin group (301) and the corresponding driving board pin group (302) which are not permanently fixed, the resistor board pin group (301) is the pin header, and the driving board pin group (302) is the pin, the pin header is fixedly installed on the thyristor gate resistor board (1), the pin is fixedly installed on the driving board (2), and a pin hole for plugging the corresponding pin is arranged on the pin header.

6. The space heat radiation structure of a thyristor gate resistor board according to claim 5, wherein The resistor board pin groups (301) and the driving board pin groups (302) are all provided with three resistor board pin groups (301) and three driving board pin groups (302), one resistor board pin group (301) and the corresponding driving board pin group (302) are fixedly connected through welding, and the remaining resistor board pin groups (301) and the corresponding driving board pin groups (302) are plugged.

7. The space heat radiation structure of thyristor gate resistor board according to claim 1, characterized in that, The thyristor gate resistor board (1) and the driving board (2) are arranged in parallel.

8. The space heat radiation structure of thyristor gate resistor board according to claim 4, characterized in that, The axis of the pin is perpendicular to the plane of the thyristor gate resistor board (1) and the driving board (2).

9. The space heat radiation structure of a thyristor gate resistor board according to claim 1, wherein The connecting distance between the thyristor gate resistor board (1) and the driving board (2) is greater than 10 mm.

10. The space heat radiation structure of a thyristor gate resistor board according to claim 1, wherein Ventilation holes (101) for heat dissipation are arranged on the thyristor gate resistor board (1).

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