Gas supply mechanism, semiconductor manufacturing system, and remaining amount monitoring method

Abstract

The present invention addresses the problem of providing a technique capable of identifying the remaining amount of a raw material with high accuracy. The gas supply mechanism supplies a raw material gas obtained by gasifying a raw material. The gas supply mechanism is provided with: an inner container for accommodating the raw material; an outer container that has a space for accommodating the inner container so as to be relatively displaceable, and that causes the raw material gas generated from the raw material in the inner container to flow to the outside; and a detector that detects an index related to the weight of the inner container. Before the weight-related index of the inner container is detected by the detector, the space of the outer container is decompressed to a vacuum atmosphere that is lower than atmospheric pressure.

Description

TECHNICAL FIELD

[0001] The present application relates to a gas supply mechanism, a semiconductor manufacturing system, and a residual amount monitoring method. BACKGROUND

[0002] In Patent Literature 1, a semiconductor manufacturing system (semiconductor manufacturing apparatus) that supplies a gas obtained by gasifying a raw material (liquid material) to a processing section is disclosed. The semiconductor manufacturing system recognizes a replacement timing of a tank that stores the raw material or a raw material filling timing by detecting a liquid level of the raw material using a sound wave.

[0003] <RELATED ART DOCUMENTS>

[0004] <PATENT LITERATURE>

[0005] Patent Literature 1: Japanese Patent No. 4626956 SUMMARY

[0006] <PROBLEMS TO BE SOLVED BY THE INVENTION>

[0007] The present application provides a technology capable of recognizing a residual amount of a raw material with high accuracy.

[0008] <MEANS FOR SOLVING THE PROBLEMS>

[0009] According to one embodiment, a gas supply mechanism that supplies a raw material gas obtained by gasifying a raw material includes: an inner container that stores the raw material; an outer container that has a space capable of relatively displacing the inner container and causes the raw material gas generated from the raw material of the inner container to flow to the outside; and a detector that detects an index related to a weight of the inner container, wherein the space of the outer container is depressurized to a vacuum atmosphere lower than an atmospheric pressure before the index related to the weight of the inner container is detected by the detector.

[0010] <EFFECTS OF THE INVENTION>

[0011] According to one embodiment, a residual amount of a raw material can be recognized with high accuracy. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a view that schematically shows a semiconductor manufacturing system according to an embodiment.

[0013] Figure 2 is a cross-sectional view that enlarges and shows a raw material supply source according to an embodiment.

[0014] Figure 3 (A) of FIG. 4 is a flowchart showing an example of a substrate processing method of a semiconductor manufacturing system. Figure 3 (B) of FIG. 4 is a flowchart showing an example of a residual amount monitoring method.

[0015] Figure 4 is a sectional view showing a raw material supply source involved in a modification example. DETAILED DESCRIPTION

[0016] Hereinafter, a mode for carrying out the present application will be described with reference to the drawings. In each drawing, the same reference signs are attached to the same constituent parts, and sometimes repeated description is omitted.

[0017] Figure 1 is a diagram schematically showing a semiconductor manufacturing system 100 involved in the embodiment. As shown in the diagram, the semiconductor manufacturing system 100 is provided with a semiconductor manufacturing apparatus 1 which processes a substrate W as a semiconductor device, a gas supply mechanism 2 which supplies a gas used at the time of processing to the semiconductor manufacturing apparatus 1, and a control section 9 which controls each constituent. Figure 1

[0018] The semiconductor manufacturing apparatus 1 is a substrate processing apparatus which performs a substrate processing such as film formation processing, etching processing, cleaning processing, modification processing, ashing processing, and the like on the substrate W. Hereinafter, the semiconductor manufacturing apparatus 1 which performs the film formation processing will be described representatively. In this case, the semiconductor manufacturing apparatus 1 includes a processing container 10, a substrate support section 11, a shower head 12, a gas exhaust section 13, and the like.

[0019] The processing container 10 is formed of an aluminum alloy or the like, and is formed in a cylindrical shape having a processing space 10s inside. The semiconductor manufacturing apparatus 1 opens an unillustrated gate valve provided to a side wall of the processing container 10, and carries in and out the substrate W to and from the processing space 10s.

[0020] The substrate support section 11 is provided to a bottom portion of the processing container 10, and places the substrate W on an upper surface. The substrate support section 11 is provided with a chuck device which fixes the substrate W, and a temperature adjustment module which adjusts the temperature of the substrate W, and the like (all unillustrated).

[0021] The shower head 12 ejects a processing gas, a purge gas, and the like toward the processing space 10s. Inside the shower head 12, a gas diffusion chamber which diffuses the gas is provided. To a lower surface of the shower head 12 (an opposite surface of the substrate support section 11), a plurality of gas holes which communicate the gas diffusion chamber with the processing space 10s are provided. Further, the semiconductor manufacturing apparatus 1 connects a gas supply path 21 of the gas supply mechanism 2 with the shower head 12, and supplies a processing gas (a raw material gas, a carrier gas, and the like) to the gas diffusion chamber via the gas supply path 21, and ejects the processing gas from each gas hole.

[0022] ​Alternatively, the substrate support 11 and / or the nozzle 12 may also be a structure for plasma processing, which generates plasma in the processing space 10s by providing power for plasma generation via a power source (not shown). For example, the substrate support 11 may function as a lower electrode during plasma processing, and the nozzle 12 may function as an upper electrode during plasma processing.

[0023] The gas exhaust unit 13 has an exhaust path 131 for discharging gas from the processing container 10. The exhaust path 131 communicates with the processing space 10s via the exhaust port of the processing container 10. Furthermore, the gas exhaust unit 13 includes a pressure regulating valve 132, a vacuum pump 133, etc., at appropriate locations along the exhaust path 131. The pressure regulating valve 132 and the vacuum pump 133 are connected to the control unit 9 and their operation is controlled by the control unit 9.

[0024] The semiconductor manufacturing apparatus 1 described above is mounted on an apparatus frame (not shown) and installed in a suitable location in a cleanroom or similar environment. A gas supply mechanism 2 is mounted on the upper part of the processing container 10, for example, on the same apparatus frame as the semiconductor manufacturing apparatus 1. The gas supply mechanism 2 supplies processing gas from the upper part of the processing container 10 to the nozzle 12 via a gas supply path 21.

[0025] Gas supply mechanism 2 has one or more (in Figure 1 There is one raw material supply source 30 (one in total). The gas supply path 21 of the gas supply mechanism 2 is connected between the raw material supply source 30 and the nozzle 12 of the processing container 10. Furthermore, the gas supply mechanism 2 includes a valve 22 for opening and closing the flow path of the gas supply path 21, and a flow regulator 23 for adjusting the flow rate of the gas flowing in the gas supply path 21. The valve 22 and the flow regulator 23 are connected to the control unit 9 and their operation is controlled by the control unit 9.

[0026] The raw material supply source 30 is a gas source that supplies the main raw material gas contained in the processed gas to the gas supply path 21. The raw material supply source 30 according to the embodiment contains solid raw material internally and is capable of ejecting raw material gas obtained by vaporization (sublimation) of the solid raw material. The specific structure of this raw material supply source 30 will be described in detail later.

[0027] The solid raw material in the raw material supply source 30 is not particularly limited, but for example, a chlorinated compound such as aluminum chloride (AlCl3) or copper chloride (CuCl2) can be given. Alternatively, the raw material can be a metal organics such as Si, Hf, Ta, Zr, Al, Ti, Zn, In, Ga, P, or other solid raw materials. In addition, the raw material housed in the raw material supply source 30 is not limited to a solid raw material, but can be a liquid raw material. That is, "gasification" in the present specification includes the concept of sublimation of a solid raw material into a gas, and the concept of evaporation of a liquid raw material into a gas.

[0028] Further, the gas supply mechanism 2 is provided with a carrier gas supply portion that supplies a carrier gas to the upstream side (primary side) of the raw material supply source 30. The carrier gas is mixed with the raw material gas in the raw material supply source 30, and functions to transport the raw material gas to the processing vessel 10 via the gas supply path 21. The carrier gas supply portion includes a carrier gas supply path 24, a valve 25 and a regulator 26 provided at a position halfway along the carrier gas supply path 24, and a carrier gas storage tank 27 provided at the upstream end of the carrier gas supply path 24.

[0029] The carrier gas supplied by the carrier gas supply portion is selected as appropriate in accordance with the raw material gas and the like of the raw material supply source 30. For example, as the carrier gas, a non-reactive gas such as argon (Ar), helium (He), or nitrogen (N2) can be given. The carrier gas storage tank 27 stores the carrier gas after compression. The valve 25 is connected to the control portion 9, and opens and closes the flow path of the carrier gas supply path 24 under the control of the control portion 9. The regulator 26 reduces the pressure of the carrier gas supplied from the carrier gas storage tank 27 to a set pressure.

[0030] The above gas supply mechanism 2 supplies the raw material gas generated by gasification of the raw material to the semiconductor manufacturing apparatus 1 as a processing gas mixed with a carrier gas under the control of the control portion 9, and performs substrate processing based on the raw material gas. The control portion 9 applies a computer having a processor, a memory, an input / output interface, and the like. The control portion 9 accurately recognizes the amount of the raw material of the raw material supply source 30, and thus urges replenishment of the raw material or replacement of the raw material supply source 30 at an appropriate timing. Alternatively, the control portion 9 can adjust the supply amount (concentration) of the raw material gas, adjust the processing period, and the like, based on the amount of the raw material. Thus, the raw material supply source 30 has a configuration that improves the detection accuracy of the amount of the raw material.

[0031] Next, the structure of the raw material supply source 30 according to the embodiment will be described with reference to Figure 2 The structure of the raw material supply source 30 according to the embodiment will be described in detail. Figure 2 is a cross-sectional view that enlarges the raw material supply source 30.

[0032] The raw material supply source 30 is provided with an outer container 31 and an inner container 32 that is displaceably housed inside the outer container 31. That is, the inner container 32 is a member that is relatively displaced inside the outer container 31.

[0033] The outer container 31 is formed in a cylindrical (or square cylindrical) shape having a bottom wall 311, a side wall 312, and a top wall 313. Inside the outer container 31, a space 31s capable of housing the inner container 32 is provided. To the outer container 31, the gas supply path 21 and the carrier gas supply path 24 described above are connected. The space 31s of the outer container 31 communicates with the processing container 10 and the gas exhaust portion 13 of the semiconductor manufacturing apparatus 1 via the gas supply path 21. Therefore, the outer container 31 can be depressurized to a vacuum atmosphere via the processing container 10 through the gas exhaust portion 13. In addition, in the outer container 31, the gas supply path 21 and the carrier gas supply path 24 are connected to the top wall 313, but the connection position can be designed according to the specific gravity of the raw material gas and the carrier gas, and can be the bottom wall 311 or the side wall 312. Figure 2

[0034] Further, the outer container 31 is provided with a column portion 33 at the center of the bottom wall 311. The column portion 33 is formed in a cylindrical shape, for example, and extends in the vertical direction upward from the bottom wall 311 along the axis of the space 31s. The column portion 33 has a guide function capable of guiding the relative displacement of the inner container 32 in the vertical direction. The outer peripheral surface of the column portion 33 is preferably formed in a smooth peripheral surface or the like. Further, the raw material supply source 30 is provided with a detector 34 inside the column portion 33 that detects the height position of the inner container 32.

[0035] The detector 34 can be applied, for example, to an optical sensor capable of optically detecting the height position of the inner container 32. As one example thereof, the detector 34 can be a sensor that detects the distance from the position where the column portion 33 is provided to the top wall 323 of the inner container 32 in the vertical direction upward, and obtains the height position of the inner container 32 based on the detected distance. The obtained height position of the inner container 32 is an index related to the weight of the entire inner container 32. The detector 34 is communicably connected to the control portion 9, and transmits the detection result of the height position of the inner container 32 to the control portion 9. In addition, the type of the detector 34 is not limited to the optical sensor, and a sensor of an electrostatic capacitance type, an ultrasonic type, or the like can be applied. Further, the detector 34 can be an encoder that detects a linear scale provided in the axial direction of the inner container 32. Further, the detector 34 can be a magnetic sensor that embeds a magnet in the inner container 32 and reads it.

[0036] ​The inner container 32 is a container that directly houses the raw material (solid raw material SM) in the space 31s of the outer container 31. The inner container 32 is formed in a cylindrical shape (or a square tubular shape) having a bottom wall 321, a side wall 322, a top wall 323, and is smaller than the outer container 31. In the inside of the inner container 32, a housing space 32s of the solid raw material SM is provided. The solid raw material SM housed in the inner container 32 is in a state of being in contact with the side wall 322 of the inner container 32 and the bottom wall 321 of the outer container 31. Figure 2 In the present embodiment, a spherical solid is exemplified, but the present embodiment is not limited thereto, and a granular or powdery solid can also be used.

[0037] On the top wall 323 of the inner container 32, a mesh body 323m that allows the raw material gas after the gasification of the solid raw material SM to flow out is provided. Thus, the inner container 32 can allow the raw material gas to flow out upward. In addition, the top wall 323 is not limited to the mesh body 323m, and can be a simple open structure.

[0038] Further, on the top wall 323 of the inner container 32, as shown by a double-dotted line in Figure 2 a filling pipe 40 for filling the solid raw material SM into the inner container 32 can also be installed. The filling pipe 40 penetrates the outer container 31 and is connected to a solid raw material SM supply hopper (not shown) provided outside. The filling pipe 40 from the outer container 31 to the inside is configured not to directly contact the inner container 32. Thus, the inner container 32 can be smoothly displaced. Alternatively, the filling pipe 40 can be formed of a bellows to allow the displacement of the inner container 32 while filling the solid raw material SM into the housing space 32s.

[0039] The bottom wall 321 of the inner container 32 is formed in a conical shape (funnel shape) that protrudes toward the vertical direction on the side of the axis. Thus, the solid raw material SM housed in the housing space 32s is guided to be aggregated in a direction close to the axis of the inner container 32.

[0040] Further, the inner container 32 has a hole portion 32h for the insertion and arrangement of the column portion 33 at the axis. The hole portion 32h is formed in a circular cross-sectional shape having a diameter slightly larger than that of the column portion 33 and extends from the opening of the bottom wall 321 to the top wall 323. The inner container 32 is housed in the hole portion 32h by the column portion 33 of the outer container 31, and thus the movement in the horizontal direction is restricted. The inner wall of the inner container 32 constituting the hole portion 32h is formed in a smooth peripheral surface that can slide with respect to the outer peripheral surface of the column portion 33.

[0041] Further, the inner container 32 has a labyrinth structure 324 above the accommodation space 32s. The labyrinth structure 324 prevents the solid material from floating up from the inner container 32 and being immersed in the gas supply path 21 even in a case where the solid material floats up due to heating of the solid material SM or supply of the solid material SM. In a case where the filling pipe 40 is provided, the labyrinth structure 324 may, for example, have a structure in which an inclined plate is overlapped so as to move the solid material SM filled from the filling pipe 40 downward.

[0042] The raw material supply source 30 has a heater 35 for heating the solid material SM in the outer container 31. The heater 35 is, for example, embedded in the bottom wall 311 of the outer container 31. The heater 35 can employ a configuration of an electric heating wire, a sheet, or the like. The position at which the heater 35 is provided is not particularly limited, and the heater 35 can be provided outside the outer container 31 or in the space 31s of the outer container 31. The heater 35 can be provided not only in the bottom wall 311 but also in the side wall 312.

[0043] The raw material supply source 30 has a heat exchange structure 36 between the bottom wall 311 of the outer container 31 and the bottom wall 321 of the inner container 32. The heat exchange structure 36 is, for example, formed of a plurality of fins 361 protruding upward in the vertical direction from the bottom wall 311 of the outer container 31 and a plurality of fins 362 protruding downward in the vertical direction from the bottom wall 321 of the inner container 32. The fins 361 and the fins 362 are alternately arranged in the lateral direction (horizontal direction), and heat exchange is performed between the adjacent fins 361 and 362 without contact therebetween. Thus, the heat exchange structure 36 can easily transfer heat generated by the heater 35 to the solid material SM in the inner container 32.

[0044] The fins 361 and 362 are spaced apart from each other by a distance greater than the distance between the outer circumferential surface of the columnar portion 33 and the inner circumferential surface of the hole portion 32h of the inner container 32. Thus, when the inner container 32 is displaced, interference between the fins 361 and 362 can be avoided. The heat exchange structure 36 is not limited to the above-described structure, and various structures can be employed. For example, the heat exchange structure 36 can be a structure in which the bottom wall 321 of the inner container 32 has a thickness and a plurality of holes, and a plurality of rods are provided in the bottom wall 311 of the outer container 31 so as to be inserted into the holes.

[0045] Then, the raw material supply source 30 is configured to support the inner container 32 within the outer container 31 by the elastic member 37. Specifically, the elastic member 37 includes a lower side spring member 371 disposed between the bottom wall 311 of the outer container 31 and the bottom wall 321 of the inner container 32, and an upper side spring member 372 disposed between the top wall 313 of the outer container 31 and the top wall 323 of the inner container 32. In addition, the elastic member 37 supporting the inner container 32 does not necessarily include both the lower side spring member 371 and the upper side spring member 372, but can include at least one of them. Furthermore, the elastic member 37 is not limited to a spring, but other members such as a rubber material can be applied.

[0046] The lower side spring member 371 is, for example, provided to be concentric with the axis near the column portion 33 and the hole portion 32h. The lower side spring member 371 elastically supports the vicinity of the axis of the bottom wall 321 of the inner container 32, and on the other hand, the upper side spring member 372 is provided in plurality in the circumferential direction near the outer peripheral portion of the inner container 32, and elastically suspends the inner container 32.

[0047] As such, the inner container 32 is floated in the space 31s by the elastic member 37, and thus the height position in the space 31s changes depending on the amount of the solid raw material SM and the spring constant of the elastic member 37. For example, in a state where the inner container 32 is filled with a large amount of the solid raw material SM, the inner container 32 becomes heavy and is disposed on the lower side of the space 31s. On the other hand, in a state where the inner container 32 is filled with a small amount of the solid raw material SM, the inner container 32 becomes light and is displaced to the upper side of the space 31s. That is, with respect to the inner container 32, the weight is pushed upward by the elastic member 37 by an amount corresponding to the amount of the solid raw material SM consumed. By floating the inner container 32 upward as such in conjunction with the consumption of the solid raw material SM, the top wall 323 of the inner container 32 is brought closer to the top wall 313 of the outer container 31, and thus the raw material gas after gasification can be more efficiently delivered.

[0048] The control portion 9 can recognize the amount of the solid raw material SM of the inner container 32 by the detection result of the height position of the inner container 32. In other words, the control portion 9 functions as an arithmetic portion that calculates the amount of the solid raw material SM based on a weight-related index of the inner container 32.

[0049] Further, the raw material supply source 30 can be provided with a magnetic field generator 39 on the outer peripheral surface of the outer container 31, and the inner container 32 can be formed of a magnetic substance. The magnetic field generator 39 is connected to the control portion 9, generates a magnetic field based on the control of the control portion 9, and causes the magnetic field to act on the inner container 32 as a magnetic substance. Thereby, for example, when the inner container 32 is displaced in the vertical direction, the magnetic field of the magnetic field generator 39 can act as a damper that suppresses the vibration of the inner container 32.

[0050] In addition, with respect to the height position detected by the detector 34, a vibration generated in the displacement of the inner container 32 is also detected as a detection result of repeated oscillation. Therefore, it is preferable that the control unit 9, after receiving the detection result of the detector 34, performs Fourier transform with respect to the height position oscillating on the time axis, thereby calculating one height position. Thus, even if the inner container 32 vibrates, the control unit 9 can obtain an appropriate height position.

[0051] The semiconductor manufacturing system 100 and the gas supply mechanism 2 according to the embodiment are basically configured as described above, and the operation thereof will be described below.

[0052] Figure 3 (A) of FIG. 1 is a flowchart illustrating an example of a substrate processing method of the semiconductor manufacturing system 100. Figure 3 (B) of FIG. 1 is a flowchart illustrating an example of a residual amount monitoring method. The control unit 9 of the semiconductor manufacturing system 100 performs substrate processing on the substrate W in the semiconductor manufacturing apparatus 1. At this time, the control unit 9 controls the substrate processing method illustrated in (A) of FIG. 1, steps S101 to S106. In addition, hereinafter, the substrate processing method of the semiconductor manufacturing apparatus 1 performing the above film formation processing will be described, but of course, other substrate processing such as etching processing can also employ substantially the same processing flow. Figure 3 (B) of FIG. 1 is a flowchart illustrating an example of a residual amount monitoring method. The control unit 9 of the semiconductor manufacturing system 100 performs substrate processing on the substrate W in the semiconductor manufacturing apparatus 1. At this time, the control unit 9 controls the substrate processing method illustrated in (A) of FIG. 1, steps S101 to S106. In addition, hereinafter, the substrate processing method of the semiconductor manufacturing apparatus 1 performing the above film formation processing will be described, but of course, other substrate processing such as etching processing can also employ substantially the same processing flow.

[0053] Specifically, the control unit 9, in a state where the substrate W is placed on the substrate support unit 11, controls the gas exhaust unit 13 to depressurize the processing space 10s of the processing container 10 to a target pressure (vacuum atmosphere) (step S101). The gas exhaust unit 13, by sucking the processing space 10s of the processing container 10, imparts a suction force to the outer container 31 via the gas supply path 21 with the valve 22 opened. That is, the gas exhaust unit 13 can also suck gas from the space 31s of the outer container 31. Thus, the space 31s of the outer container 31 is depressurized to a vacuum atmosphere lower than the atmospheric pressure.

[0054] Further, the control unit 9 adjusts the temperature of the substrate W to a target temperature by a temperature adjustment module provided in the substrate support unit 11 (step S102).

[0055] After the pressure of the processing container 10 reaches the target pressure and the temperature of the substrate W reaches the target temperature, the control section 9 controls the gas supply mechanism 2 to supply the processing gas into the processing container 10, thereby starting the substrate processing. Specifically, the gas supply mechanism 2 generates the source gas by heating the heater 35 of the outer container 31 and transferring heat to the solid source material SM in the inner container 32 via the heat exchange structure 36 (step S103). Note that the timing of heating the solid source material SM is not particularly limited, and for example, it can be performed simultaneously with step S101 or step S102, or before these steps.

[0056] After the source gas flows into the outer container 31, the gas supply mechanism 2 opens the valve 25 to allow the carrier gas in the storage tank 27 to flow, and supplies the source gas and the carrier gas into the processing container 10 (step S104). Specifically, the carrier gas flows into the space 31s of the outer container 31 via the carrier gas supply path 24, and mixes with the source gas in the space 31s. Then, the mixed source gas and carrier gas flow into the gas supply path 21, and are supplied to the shower head 12 via the gas supply path 21, spread in the shower head 12, and sprayed into the processing space 10s of the processing container 10. The source gas sprayed into the processing space 10s adheres to the surface of the substrate W placed on the substrate support section 11. The control section 9 continues to perform the pressure reduction based on the gas exhaust section 13 and the temperature adjustment based on the temperature adjustment module during the supply of the source gas to the substrate W, to adjust the film quality, film thickness, and the like of the film formed on the substrate W.

[0057] Further, the control section 9 determines the end timing of the substrate processing during the substrate processing (step S105). For example, the control section 9 measures the execution period of the substrate processing, and determines whether the execution period has reached the target period set by the process. In the case where the substrate processing is not ended (step S105: No), the supply of the source gas and the carrier gas during the substrate processing, the pressure reduction based on the gas exhaust section 13, the temperature adjustment based on the temperature adjustment module, and the like are continued. On the other hand, in the case where the substrate processing is ended (step S105: Yes), the process proceeds to step S106.

[0058] In step S106, the control section 9 performs the end processing of the substrate processing. For example, in the end processing, the gas supply mechanism 2 stops the supply of the source gas and the carrier gas, and stops the heating of the solid source material SM. Further, in the end processing, the stop of the suction of the gas by the gas exhaust section 13, the stop of the temperature adjustment based on the temperature adjustment module, and the like are performed.

[0059] By performing the above substrate processing method, the semiconductor manufacturing apparatus 1 can form a film having a desired thickness on the substrate W by the raw material gas. At this time, the gas supply mechanism 2 can supply the raw material gas to the processing container 10 without delay by the raw material supply source 30. Specifically, the inner container 32 after heating causes the raw material gas to flow out to the upper side of the space 31s of the outer container 31, and in addition, in the outer container 31, the carrier gas supplied to the upper side of the space 31s by the carrier gas supply path 24 circulates in a manner to push out the raw material gas. Therefore, the raw material gas and the carrier gas hardly stay in the space 31s, and flow into the gas supply path 21 connected to the outer container 31. In particular, in a case where the amount of the solid raw material SM becomes small, the inner container 32 is brought close to the upper side of the space 31s by the elastic members (lower spring member 371, upper spring member 372), whereby the raw material gas can be easily caused to flow out.

[0060] Then, the control section 9 performs an amount monitoring method of monitoring the amount of the solid raw material SM of the inner container 32 after stopping the supply of the raw material gas by the gas supply mechanism 2. For example, in the amount monitoring method, a processing flow as shown in (B) of the above is performed. In addition, the amount monitoring method can be executed in the supply of the raw material gas, and can continuously monitor the amount of the solid raw material SM. Figure 3

[0061] Specifically, the control section 9 detects the height position of the inner container 32 that houses the raw material by the detector 34 provided to the column portion 33 of the outer container 31 (step S111). At the time of detection by the detector 34, the space 31s of the outer container 31 is depressurized to a vacuum atmosphere that is a pressure lower than the atmospheric pressure by the suction of the gas exhaust section 13. Therefore, the inner container 32 can smoothly move the raw material gas from the housing space 32s, and can displace almost without being affected by other gases in the space 31s. Therefore, the detector 34 can well detect the height position of the inner container 32.

[0062] However, the inner container 32 is supported by the elastic members 37 (lower spring member 371, upper spring member 372), and sometimes vibrates due to displacement of the height position accompanying a decrease in the amount of the solid raw material SM. The detection result obtained from the detector 34 becomes a height position that repeatedly oscillates on a time axis. Therefore, the control section 9 calculates an appropriate height position by performing Fourier transform on the detection result of the oscillation included in the detection result (step S112).

[0063] ​The control section 9 calculates the weight of the entire inner container 32 including the solid raw material SM based on the calculated height position (step S113). For example, the control section 9 retains a function or a table indicating the relationship between the spring constant of the elastic member, the height position, and the weight of the entire inner container 32 in advance, and calculates the weight of the entire inner container 32 using the function or the table and the calculated height position.

[0064] Further, the control section 9 calculates the amount of the solid raw material SM by subtracting the weight of the inner container 32 in the empty state retained in advance from the weight of the entire inner container 32 (step S114). By thus calculating the amount of the raw material based on the relative position (height position) of the inner container 32 with respect to the outer container 31, the control section 9 can obtain the amount of the solid raw material SM with high accuracy. In addition, the control section 9 can also be configured to directly calculate the amount of the solid raw material SM by a function or a table and the like according to the calculated height position of the inner container 32.

[0065] Further, the control section 9 retains a determination threshold value for starting the filling of the raw material in advance, compares the calculated amount of the solid raw material SM with the determination threshold value, and determines whether to start the filling of the solid raw material SM (step S115). In the case where the amount of the solid raw material SM is smaller than the determination threshold value (step S115: YES), the process proceeds to step S116.

[0066] In step S116, the control section 9 supplies the solid raw material SM to the inner container 32 via the filling pipe 40. Thereby, a certain amount of the solid raw material SM is filled into the inner container 32, and the inner container 32 displaced to the upper side of the space 31s is lowered to the lower side according to the weight of the solid raw material SM. When step S116 ends, the control section 9 ends the process flow of the material monitoring method.

[0067] On the other hand, in the case where the amount of the solid raw material SM is equal to or larger than the determination threshold value (step S115: NO), it is determined not to perform the filling of the raw material, and the process flow is ended without performing step S116. In the case of monitoring the amount of the solid raw material SM again, the control section 9 repeats from step S1.

[0068] As described above, the amount monitoring method can simply recognize the amount of the solid raw material SM based on the height position of the inner container 32 with respect to the outer container 31. In particular, by reducing the space 31s of the outer container 31 to the vacuum atmosphere lower than the atmospheric pressure, it is possible to suppress the influence of the gas as much as possible, and obtain the amount of the solid raw material SM with high accuracy. Thereby, the amount monitoring method can perform the replenishment of the solid raw material SM at an appropriate timing.

[0069] Further, the gas supply mechanism 2, the semiconductor manufacturing system 100, and the residual amount monitoring method according to the embodiments are not limited to the above-described embodiments, and various modifications can be made. For example, in a case where the residual amount of the solid raw material SM is calculated during supply of the raw material gas in the substrate processing, it is preferable that even if the residual amount of the solid raw material SM is less than the determination threshold at the time of the substrate processing, the substrate processing is continued without performing the filling of the solid raw material SM. Then, after the end of the substrate processing, the filling of the solid raw material SM is performed. Thereby, the semiconductor manufacturing system 100 can stably perform the substrate processing while avoiding the temperature change and the change of the gas accompanying the filling of the solid raw material SM at the time of the substrate processing.

[0070] Further, in the above-described embodiments, the solid raw material SM is filled into the inner container 32 via the filling pipe 40, but the gas supply mechanism 2 can also have a structure in which the raw material supply source 30 is replaced without the filling pipe 40. For example, the residual amount monitoring method notifies the user of information that the replacement of the raw material supply source 30 is to be performed in a case where the residual amount of the solid raw material SM is compared with the determination threshold and the solid raw material SM is less than the determination threshold. Thereby, the user can replace the raw material supply source 30 at an appropriate timing. Further, the replacement of the raw material supply source 30 can be a method in which both the outer container 31 and the inner container 32 are replaced, or a method in which only the inner container 32 is replaced.

[0071] Further, the semiconductor manufacturing system 100 can have a structure in which a plurality of gas supply mechanisms 2 are provided, and the raw material gas is supplied from each of the gas supply mechanisms 2 to the processing container 10 at an appropriate timing. Furthermore, the gas supply mechanism 2 is not limited to a structure in which the raw material gas is circulated together with the carrier gas, but can also be a structure in which the raw material gas is circulated in the gas supply path 21 without the carrier gas supply portion depending on the kind of the raw material.

[0072] Further, the gas supply mechanism 2 is not limited to use the gas exhaust portion 13 of the semiconductor manufacturing apparatus 1 for the depressurization of the space 31s of the outer container 31. For example, the gas supply mechanism 2 can also have a structure in which a dedicated depressurization mechanism is connected to the outer container 31, and the space 31s is depressurized to a vacuum atmosphere by the depressurization mechanism.

[0073] The gas supply mechanism 2 is not limited to use the detector 34 that detects the height position of the inner container 32 as an index related to the weight of the inner container 32. As one example, the gas supply mechanism 2 can also have a structure in which the weight of the inner container 32 is directly measured by a weighing device provided in the outer container 31.

[0074] Figure 4 is a cross-sectional view showing a raw material supply source 30A according to a modification. As shown in FIG. 17, the raw material supply source 30A has a structure in which the outer container 31 and the inner container 32 are integrally formed. The raw material supply source 30A has a structure in which the outer container 31 and the inner container 32 are integrally formed, and the raw material gas is supplied from the raw material supply source 30A to the processing container 10 via the gas supply path 21. Figure 4As shown, the raw material supply source 30A can also be provided with a plurality of detectors 34 that detect the position of the inner container 32. The plurality of detectors 34 include, for example, a first detector 341 provided to the column portion 33, and a plurality of second detectors 342 provided to the inner circumferential surface of the side wall 312 of the outer container 31. The plurality of second detectors 342 are provided at substantially equal intervals along the circumference of the inner circumferential surface of the side wall 312. Each of the plurality of second detectors 342 detects the height position of the inner container 32 present on the side thereof.

[0075] The control portion 9 acquires the detection results detected by the first detector 341 and each of the second detectors 342, and using these detection results, the levelness of the inner container 32 can be calculated. That is, if the height positions of the detectors 34 are approximate, it can be said that the levelness is high, and if the height positions are dispersed, it can be said that the levelness is low. In the case where the levelness of the inner container 32 is low, it can be presumed that the solid raw material SM of the inner container 32 is skewed. Further, in the case where the levelness is low, the inner container 32 comes into contact with the outer container 31 with a strong frictional force, and affects the displacement. Therefore, the control portion 9 corrects the height position of the inner container 32 in consideration of the levelness in the detection of the amount of the solid raw material SM. Thereby, the amount of the solid raw material SM can be accurately detected. Further, in the case where the levelness is lower than a given level, the control portion 9 can, for example, perform a process of filling the solid raw material SM, notifying the user, increasing the amount of heating of the heater 35 in a region where the solid raw material SM is abundant, and the like.

[0076] The technical idea and effects of the present application explained using the above-described embodiments are described below.

[0077] The first aspect of the present application is a gas supply mechanism 2 that supplies a raw material gas obtained by gasifying a raw material (solid raw material SM), including: an inner container 32 that houses the raw material; an outer container 31 that has a space 31s that can relatively displaceably house the inner container 32, and that causes the raw material gas generated from the raw material of the inner container 32 to flow to the outside; and a detector 34 that detects an index related to the weight of the inner container 32, wherein the space 31s of the outer container 31 is depressurized to a vacuum atmosphere lower than the atmospheric pressure before the index related to the weight of the inner container 32 is detected by the detector 34.

[0078] According to the above, the gas supply mechanism 2 can stably and highly accurately detect the index related to the weight of the inner container 32 by depressurizing the space 31s of the outer container 31 to a vacuum atmosphere at the time of detecting the index related to the weight of the inner container 32 by the detector 34. Thereby, the gas supply mechanism 2 can highly accurately recognize the amount of the raw material (solid raw material SM) housed by the inner container 32 based on the index related to the weight of the inner container 32. As a result, the gas supply mechanism 2 can urge the filling of the raw material or the replacement of the inner container 32 at an appropriate timing.

[0079] Further, the gas supply mechanism 2 is provided with an elastic member 37 that elastically supports the inner container 32 at a position apart from the outer container 31. Thus, the gas supply mechanism 2 simply displaces the inner container 32 that is elastically supported, and can displace the height position of the inner container 32 as an index related to the weight of the inner container 32.

[0080] Further, the detector 34 detects the relative height position of the inner container 32 with respect to the outer container 31 as an index related to the weight of the inner container 32. Thus, the gas supply mechanism 2 can smoothly calculate the amount of the raw material (solid raw material SM) based on the height position of the inner container 32.

[0081] Further, there is provided an arithmetic unit (control unit 9) that calculates the amount of the raw material (solid raw material SM) of the inner container 32 based on the index related to the weight of the inner container 32 detected by the detector 34, and compares the calculated amount of the raw material with a determination threshold value, and urges the filling of the raw material or urges the replacement of the inner container in a case where the amount of the raw material is smaller than the determination threshold value. Thus, the gas supply mechanism 2 can take an appropriate countermeasure in a case where the raw material is reduced.

[0082] Further, the arithmetic unit (control unit 9) calculates the height position of the inner container 32 that vibrates due to the elastic member 37 by performing Fourier transform in a case where the height position of the inner container 32 is acquired from the detector 34. Thus, the arithmetic unit can calculate the height position of the vibrating inner container 32 with high precision.

[0083] Further, there are provided a plurality of detectors 34 that detect the height position of the inner container 32, and the arithmetic unit (control unit 9) identifies the levelness of the inner container 32 based on the height position of the inner container 32 of the plurality of detectors 34. Thus, the gas supply mechanism 2 can correct the calculated amount of the raw material based on the levelness of the inner container 32.

[0084] Further, the inner container 32 is formed in a cylindrical shape having a hole portion 32h at the center axis, and the outer container 31 has a column portion 33 that guides the displacement of the inner container 32 by being inserted into the hole portion 32h. Thus, the gas supply mechanism 2 can stably displace the inner container 32.

[0085] Further, the detector 34 is provided to the column portion 33. Thus, the gas supply mechanism 2 can detect an index related to the height position of the inner container 32 at a position sufficiently close to the inner container 32.

[0086] Further, the bottom wall 321 of the inner container 32 is formed in a tapered shape inclined toward the shaft center and to the lower side in the vertical direction. Thus, the inner container 32 can concentrate the raw material (solid raw material SM) near the shaft center, and can stabilize the posture of the inner container 32. Therefore, the gas supply mechanism 2 can more accurately detect the index related to the weight of the inner container 32 by the detector 34.

[0087] Further, the inner container 32 is formed of a magnetic body, and the outer container 31 has a magnetic field generator 39 that generates a magnetic field with respect to the inner container 32. Thus, the gas supply mechanism 2 can rapidly converge the vibration in the displacement of the inner container 32 based on the magnetic field of the magnetic field generator 39.

[0088] Further, the second aspect of the present application is a semiconductor manufacturing system 100 including a semiconductor manufacturing apparatus 1 that processes a semiconductor, and a gas supply mechanism 2 that supplies a raw material gas obtained by vaporizing a raw material to the semiconductor manufacturing apparatus 1, the gas supply mechanism 2 including: an inner container 32 that houses the raw material; an outer container 31 that has a space 31s capable of relatively displacing the inner container 32, and causes the raw material gas generated from the raw material of the inner container 32 to flow to the outside; and a detector 34 that detects an index related to the weight of the inner container 32, and the space 31s of the outer container 31 is depressurized to a vacuum atmosphere lower than the atmospheric pressure before the index related to the weight of the inner container 32 is detected by the detector 34. In this case, the semiconductor manufacturing system 100 can also accurately recognize the amount of the raw material.

[0089] Further, the third aspect of the present application is an amount-of-raw-material monitoring method that monitors the amount of a raw material (solid raw material SM) in a gas supply mechanism 2 that supplies a raw material gas obtained by vaporizing the raw material, the gas supply mechanism 2 including: an inner container 32 that houses the raw material; an outer container 31 that has a space 31s capable of relatively displacing the inner container 32, and causes the raw material gas generated from the raw material of the inner container 32 to flow to the outside; and a detector 34 that detects an index related to the weight of the inner container 32, and in the amount-of-raw-material monitoring method, the index related to the weight of the inner container 32 is detected by the detector 34 in a state where the space 31s of the outer container 31 is depressurized to a vacuum atmosphere lower than the atmospheric pressure. In this case, the amount-of-raw-material monitoring method can also accurately recognize the amount of the raw material.

[0090] The gas supply mechanism 2, the semiconductor manufacturing system 100, and the amount-of-raw-material monitoring method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified in various ways without departing from the scope of the appended claims and the principles thereof. The matters described in the above embodiments can be adopted in other structures within a range not causing contradiction, and can be combined within a range not causing contradiction.

[0091] The semiconductor manufacturing apparatus of the present application can also be applied to any of Atomic Layer Deposition (ALD) apparatuses, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

Claims

1. A gas supply mechanism that supplies a raw material gas obtained by gasifying a raw material, comprising: an inner container that houses the raw material; an outer container that has a space in which the inner container is accommodated so as to be relatively displaced, and that causes the raw material gas generated from the raw material of the inner container to flow to the outside; and a detector that detects an index related to the weight of the inner container, wherein the space of the outer container is depressurized to a vacuum atmosphere lower than atmospheric pressure before the index related to the weight of the inner container is detected by the detector.

2. The gas supply mechanism according to claim 1, wherein the gas supply mechanism is provided with an elastic member that elastically supports the inner container at a position apart from the outer container.

3. The gas supply mechanism according to claim 2, wherein the detector detects a relative height position of the inner container with respect to the outer container as the index related to the weight of the inner container.

4. The gas supply mechanism according to claim 3, wherein the gas supply mechanism is provided with a calculation section that calculates a remaining amount of the raw material of the inner container based on the index related to the weight of the inner container detected by the detector, the calculation section compares the calculated remaining amount of the raw material with a determination threshold value, and in a case where the remaining amount of the raw material is smaller than the determination threshold value, the filling of the raw material is urged or the replacement of the inner container is urged.

5. The gas supply mechanism according to claim 4, wherein the calculation section calculates the height position of the inner container that vibrates by the elastic member by performing Fourier transform in a case where the height position of the inner container that vibrates by the elastic member is acquired from the detector.

6. The gas supply mechanism according to claim 4, wherein the gas supply mechanism is provided with a plurality of detectors that detect the height position of the inner container, and the calculation section identifies the levelness of the inner container based on the height position of the inner container of a plurality of the detectors.

7. The gas supply mechanism according to any one of claims 1 to 6, wherein the inner container is formed in a cylindrical shape having a hole portion at the center axis, and the outer container has a column portion that guides the displacement of the inner container by being inserted into the hole portion.

8. The gas supply mechanism according to claim 7, wherein the detector is provided to the column portion.

9. The gas supply mechanism according to any one of claims 1 to 6, wherein the bottom wall of the inner container is formed in a conical shape that is inclined toward the center axis and to the lower side of the vertical direction.

10. The gas supply mechanism according to any one of claims 1 to 6, wherein the inner container is formed of a magnetic body, and the outer container is provided with a magnetic field generator that generates a magnetic field to the inner container.

11. A semiconductor manufacturing system comprising: a semiconductor manufacturing device that processes a semiconductor; and a gas supply mechanism that supplies a raw material gas obtained by gasifying a raw material to the semiconductor manufacturing device, the gas supply mechanism comprising: an inner container that houses the raw material; ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ an outer container having a space capable of relatively displacing the inner container and allowing the raw material gas generated from the raw material of the inner container to flow to the outside; and a detector that detects an index related to the weight of the inner container, the space of the outer container is depressurized to a vacuum atmosphere lower than the atmospheric pressure before the index related to the weight of the inner container is detected by the detector.

12. A residual amount monitoring method of monitoring a residual amount of a raw material in a gas supply mechanism that supplies a raw material gas obtained by gasifying the raw material, wherein the gas supply mechanism includes: an inner container that houses the raw material; an outer container having a space capable of relatively displacing the inner container and allowing the raw material gas generated from the raw material of the inner container to flow to the outside; and a detector that detects an index related to the weight of the inner container, in the residual amount monitoring method, the index related to the weight of the inner container is detected by the detector in a state where the space of the outer container is depressurized to a vacuum atmosphere lower than the atmospheric pressure.

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