Multi-channel splitter spool

Abstract

Embodiments described herein relate to a gas line system having a multi-channel separator spool. In these embodiments, the gas line system will include a first gas line configured to supply a first gas. The first gas line is coupled to the multi-channel separator spool through a plurality of second gas lines in which a first gas flows. Each of the plurality of second gas lines will have a space smaller than a space of the first gas line. A smaller second gas line will be wrapped by the heater sheath. Due to the smaller space of the second gas line, the heater jacket will sufficiently heat the first gas as the first gas flows through the second gas line, thereby eliminating condensation-induced particle defects occurring in conventional gas line systems when the first gas encounters the second gas in the gas line system.

Description

[0001] This application is a continuation-in-part of the patent application with application number “202080016080.3” and titled “Multi-channel separator spool” and filed on January 21, 2020. TECHNICAL FIELD

[0002] Embodiments described herein relate generally to gas line systems used in semiconductor process chambers, and more particularly to gas line systems used in semiconductor process chambers having a multi-channel separator spool. BACKGROUND

[0003] As semiconductor devices develop to very small technology nodes and the number of layers in memory devices increases, the particle specification for each node becomes more and more stringent. In addition, a large amount of process cost during the processing of semiconductor devices involves incoming gas flows that do not have RF / plasma. Therefore, it is important to have the incoming gas flow within the particle specification.

[0004] Deposition of compounds such as silicon oxide (SiO2) can involve the reaction of gases such as tetraethyl orthosilicate (TEOS) and oxygen (O2) in the presence of an RF bias applied between an electrode on a faceplate and a base of a semiconductor process chamber. During the transport of TEOS and O2 from gas sources to the deposition chamber, each gas flows through a separately heated gas line and eventually meets and merges in an additional separate gas line before entering the process chamber. The pressure in the gas lines is much higher than the pressure in the process chamber. Under the high pressure conditions observed in the gas lines, an excess of O2 gas typically results in insufficient heating of the O2 gas. Therefore, when the cooler O2 gas meets the heated TEOS gas in the gas line, condensation occurs within the gas line due to the gas phase reaction between TEOS and O2 at low temperature and high pressure, eventually leading to particle generation.

[0005] Conventional gas lines are heated by a heater sheath. However, due to limitations in conventional heater sheaths, the heater sheath cannot provide the necessary amount of heating to avoid the occurrence of condensation and particle generation when a large amount of O2 is flowing. A large amount of O2 is mandatory in several process applications due to its superior stress, refractive index, and higher deposition rate.

[0006] Therefore, there is a need for a gas line system that provides sufficient heating of the gases before entering the process chamber. SUMMARY

[0007] One or more embodiments described herein relate generally to a system of gas lines for a process chamber and a system for processing a semiconductor substrate.

[0008] In one embodiment, a system for a gas line of a process chamber includes a first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines having a second diameter; and a heater jacket surrounding the spool; wherein the first diameter is greater than the second diameter.

[0009] In another embodiment, a system for a gas line of a process chamber includes a first gas line configured to transport a first gas, the first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines configured to transport the first gas, and each of the plurality of second gas lines having a second diameter; a third gas line configured to transport a second gas; a fourth gas line coupled to the spool at a first junction and coupled to the third gas line at a second junction; and a heater jacket surrounding the spool, the third gas line, and the fourth gas line; wherein the second diameter is less than the first diameter; and wherein the heater jacket is configured to heat the plurality of second gas lines, the third gas line, and the fourth gas line at substantially similar temperatures.

[0010] In another embodiment, a system for a gas line of a process chamber includes a first gas line configured to transport a first gas, the first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines configured to transport the first gas, and each of the plurality of second gas lines having a second diameter; a third gas line configured to transport a second gas; a fourth gas line coupled to the spool at a first junction, coupled to the third gas line at a second junction, and coupled to the process chamber at a third junction; and a heater jacket surrounding the spool, the third gas line, and the fourth gas line; wherein the second diameter is less than the first diameter; and wherein the heater jacket is configured to heat the plurality of second gas lines, the third gas line, and the fourth gas line at substantially similar temperatures. BRIEF DESCRIPTION OF DRAWINGS

[0011] So that the manner in which the above-recited features of the present disclosure can be understood in detail, a more particular description of the

[0012] Figure 1 is a schematic cross-sectional view of a process chamber for processing a semiconductor substrate in accordance with at least one embodiment described in the present disclosure;

[0013] Figure 2Ais in accordance with at least one embodiment described in the present disclosure Figure 1 a schematic cross-sectional view of a gas line system shown in FIG. 1 1 1 ; and

[0014] Figure 2B is in accordance with at least one embodiment described in the present disclosure Figure 1 a perspective view of a gas line system shown in FIG. 1 1 1. DETAILED DESCRIPTION

[0015] In the following description, reference is made to various specific details that can be employed to provide a thorough understanding of the embodiments of the disclosure. However, it will be apparent that one or more of the embodiments of the disclosure can be practiced without one or more of these specific details. In other instances, well-known features are not described in detail to avoid obscuring one or more of the embodiments of the disclosure.

[0016] The embodiments described herein generally relate to a gas line system having a multi-channel separator spool. In these embodiments, the gas line system includes a first gas line configured to supply a first gas. The first gas line is coupled to a multi-channel separator spool by a plurality of second gas lines that flow the first gas therethrough. Each of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be encased by a heater jacket. Due to the smaller volume of the second gas lines, the heater jacket will sufficiently heat the first gas as it flows through the second gas lines.

[0017] In certain embodiments, an additional third gas line is configured to supply a second gas, such as TEOS. The second gas then meets the first gas in a fourth gas line that is coupled to both the third gas line and the spool. Each of the second, third, and fourth gas lines are encased by a heater jacket. The design of the plurality of second gas lines is designed such that the heater jacket heats the first gas to a substantially similar temperature as the second gas. Thus, when the first and second gases meet in the fourth gas line, the first gas does not cool the second gas at the junction of the two gases. Due to the substantially similar temperature of the first and second gases, condensation is avoided within the fourth gas line where the first and second gases meet, thereby eliminating condensation-induced particle defects that occur in conventional gas line systems.

[0018] Figure 1This is a schematic cross-sectional view of a process chamber 100 for processing a semiconductor substrate according to at least one embodiment described in this disclosure. The process chamber 100 includes a top wall 102, side walls 104, and a bottom wall 106 to form an enclosing space. A substrate support 108 is positioned within the process chamber 100. The substrate support 108 supports a substrate 110 that can be placed on its top surface. In some embodiments, the substrate 110 may be made of silicon (Si), but may also be made of other similar materials. The substrate support 108 may be heated using a power source 112. In the following... Figures 2A-2B The gas pipeline system 114, described in more detail, is configured to allow gas to flow into the process chamber 100 via a top wall 102 adjacent to the nozzle 116. The nozzle 116 is positioned downwards from the top wall 102 and is designed to control the flow and distribution of gas before entering the process region 118. The process region 118 is located between the nozzle 116 and the substrate support 108. The gas is energized into a plasma state within the process region 118, where plasma deposition is performed to form one or more layers on the substrate 110.

[0019] Figure 2A This is a schematic cross-sectional view of a gas pipeline system 114 according to at least one embodiment described in this disclosure, and Figure 2B This is a perspective view of a gas pipeline system 114 according to at least one embodiment described in this disclosure. The gas pipeline system 114 is... Figure 1 As shown in the diagram, the gas pipeline system 114 includes a first gas pipeline 202 coupled to a spool 200 via a first nut 222. Although a first nut 222 is used for coupling in this embodiment, other coupling means may be used in the embodiments described herein. The spool 200 includes a plurality of second gas pipelines 205. The length of the first gas pipeline 202 may be, for example, about 16.5 inches, but other lengths may also be used. The length of the second gas pipelines 205 may be, for example, between about 15 inches and about 30 inches, but other lengths may also be used. A first gas flows from a first gas source 204 into the first gas pipeline 202. The first gas can flow at a flow rate exceeding 15 L / min, and in some embodiments, at a flow rate exceeding 25 L / min. The design of the gas pipeline system 114 as described in the embodiments herein, for example, allows for the use of larger flow rates of O2 gas without particle generation. Larger flow rates are preferred in several process applications due to their better stress, refractive index, and higher deposition rate. Subsequently, the first gas flows from the first gas line 202 to multiple second gas lines 205 of the spool 200. The flow of the first gas is shown via a first motion path 206. Figure 2A The arrows indicate this. Although the first gas can be O2, other similar gases can be used in gas pipeline system 114. Furthermore, although inFigures 2A-2B The center spool 200 separates into three second gas lines 205. The spool 200 can separate into other numbers of second gas lines 205.

[0020] The first gas line 202 has a first diameter 214 (i.e., an internal diameter), and each of the second gas lines 205 has a second diameter 216 (i.e., an internal diameter). The first diameter 214 is greater than the second diameter 216. In certain embodiments, the first diameter 214 is at least twice the size of the second diameter 216. In other embodiments, the first diameter 214 is at least three times the size of the second diameter 216. For example, in one embodiment, the first diameter 214 is about 0.4 inches, and the second diameter 216 is about 0.18 inches. The small diameter of the second gas lines 205, in comparison to the space of the first gas line 202, establishes a smaller space for the second gas lines 205. Due to the smaller space of the second gas lines 205, the second gas lines 205 can sufficiently heat the first gas as it flows through the second gas lines 205, and maintain the first gas at a desired high temperature. The heater sheath 228 encases around the spool 200 and the second gas lines 205 to provide heat to the second gas lines 205. The heater sheath 228 can heat the second gas lines 205 to a temperature of about 175 degrees Celsius (°C), while other temperatures are also possible.

[0021] The gas line system 114 includes a third gas line 218. A second gas flows from a second gas source 208 into the third gas line 218. Similar to the first gas line 202, the third gas line 218 can have a diameter of about 0.4 inches and a length of about 16.5 inches, while other diameters and lengths can also be used. The flow of the second gas is shown through the second motion path 210, in Figure 2A by the arrows. The second gas can be TEOS, while other similar gases can also be used in the gas line system 114. The heater sheath 228 can encase around the third gas line 218 in a similar manner as the second gas lines 205 above. The heater sheath 228 can heat the third gas line 218 to a temperature of about 175 degrees Celsius (°C), while other temperatures are also possible. Thus, the temperature of the third gas line 218 can be heated to substantially similar temperatures as the second gas lines 205, resulting in the second gas being heated to substantially similar temperatures as the first gas. For example, each of the gases can be heated to approximately 175°C within an acceptable error (e.g., + / - 15°C).

[0022] The gas line system 114 includes a fourth gas line 212. The fourth gas line 212 is coupled to the spool 200 at a first junction 232 and coupled to the third gas line 218 at a second junction 234. The fourth gas line 212 is coupled to the spool 200 on one end by the second cap 224, although other coupling means can also be used in the embodiment described herein. The fourth gas line 212 is coupled to the process chamber 100 on the other end at a third junction 236. The first gas and the second gas flow into the fourth gas line 212. Within the fourth gas line 212, the first gas and the second gas meet in a mixing region 230.

[0023] As described above, the second gas line 205 is heated to a substantially similar temperature as the third gas line 218. Thus, when the first gas and the second gas meet in the fourth gas line 212, the first gas does not cool the second gas at the intersection of the two gases in the mixing region 230. Because of the substantially similar temperatures of the first gas and the second gas, condensation is avoided within the mixing region 230 of the fourth gas line 212. A heater jacket 228 can be wrapped around the fourth gas line 212 in a similar manner as the second gas line 205 and the third gas line 218 described above. The heater jacket 228 can heat the fourth gas line 212 to a temperature of about 175 degrees Celsius (°C), although other temperatures are also possible. Thus, the fourth gas line 212 is also heated to a substantially similar temperature as the second gas line 205 and the third gas line 218, thereby eliminating condensation-induced particle defects that occur in conventional gas line systems.

[0024] Thereafter, the mixed first gas and second gas flow from the fourth gas line 212 into the process chamber 100 at the third junction 236. The total length between the mixing region 230 and the top wall 102 of the process chamber 100 Figure 1 ) can be about 33 inches, or other smaller lengths. The fourth gas line 212 can have a diameter of about 0.4 inches, although other similar diameters are also possible. The flow of the mixed gas is shown by arrows in Figure 2A . The flow rate of the mixed gas through the fourth gas line 212 can be substantially similar to the flow rate through the first gas line 202, for example. In certain embodiments, the flow rate of the mixed gas through the fourth gas line 212 can exceed, for example, 15 L / min. In other embodiments, the flow rate of the mixed gas through the fourth gas line 212 can exceed, for example, 25 L / min. After the mixed gas flows into the process chamber 100, it can be deposited to form a layer on the substrate 110 Figure 1 Figure 2A Figure 1 . Each of the first gas line 202, the second gas line 205, the third gas line 218, and the fourth gas line 212 can be made of stainless steel, although other similar materials are also possible.

[0025] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure can be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A system for a gas line of a process chamber, comprising: a first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines having a second diameter; and a heater jacket surrounding the spool and each of the plurality of second gas lines in the spool; wherein the first diameter is greater than the second diameter.

2. The system of claim 1, wherein the first diameter is at least twice the size of the second diameter.

3. The system of claim 1, wherein the first diameter is at least three times the size of the second diameter.

4. The system of claim 1, wherein the plurality of second gas lines have a length between about 15 and about 30 inches.

5. A system for a gas line of a process chamber, comprising: a first gas line configured to transport a first gas, the first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines configured to transport the first gas, and each of the plurality of second gas lines having a second diameter; a third gas line configured to transport a second gas; a fourth gas line coupled to the spool at a first junction and coupled to the third gas line at a second junction; and a heater jacket surrounding the spool and each of the second gas lines in the spool, the third gas line, and the fourth gas line; wherein the second diameter is less than the first diameter; and wherein the heater jacket is configured to heat the plurality of second gas lines, the third gas line, and the fourth gas line at substantially similar temperatures, respectively.

6. The system of claim 5, wherein the heater jacket is configured to heat the spool and the fourth gas line to approximately 175 degrees Celsius.

7. The system of claim 5, further comprising a first gas source configured to supply the first gas to the first gas line such that the first gas flows through the first gas line at a flow rate exceeding 15 L / min.

8. The system of claim 5, further comprising a first gas source configured to supply the first gas to the first gas line such that the first gas flows through the first gas line at a flow rate exceeding 25 L / min.

9. The system of claim 5, further comprising a first gas source coupled to the first gas line and configured to supply the first gas, wherein the first gas is O2.

10. The system of claim 5, further comprising a second gas source coupled to the third gas line and configured to supply the second gas, wherein the second gas is TEOS.

11. A system for processing semiconductor substrates, comprising: a process chamber; a first gas line configured to transport a first gas, the first gas line having a first diameter; a spool having a plurality of second gas lines coupled to the first gas line, each of the plurality of second gas lines configured to transport the first gas, and each of the plurality of second gas lines having a second diameter; a third gas line configured to transport a second gas; a fourth gas line coupled to the spool at a first junction, to the third gas line at a second junction, and to the fourth gas line at a third junction; and a heater shroud surrounding the spool and surrounding each of the second gas lines in the spool, the third gas line, and the fourth gas line; wherein the second diameter is less than the first diameter; and wherein the heater shroud is configured to heat the plurality of second gas lines, the third gas line, and the fourth gas line at substantially similar temperatures, respectively.

12. The system of claim 11, wherein the first diameter is at least twice the size of the second diameter.

13. The system of claim 11, wherein the heater shroud is configured to heat the spool and the fourth gas line to approximately 175 degrees Celsius.

14. The system of claim 11, further comprising a first gas source configured to supply the first gas to the first gas line such that the first gas flows through the first gas line at a flow rate exceeding 15 L / min.

15. The system of claim 11, further comprising a first gas source configured to supply the first gas to the first gas line such that the first gas flows through the first gas line at a flow rate exceeding 25 L / min. ​

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