An automated CVD vapor deposition apparatus and method with controllable gas temperature supply

Abstract

The application discloses an automatic CVD gas deposition device and method with controllable gas temperature supply, solves the problem that the CVD gas deposition furnace in the prior art cannot guarantee the pressure and temperature of the gas entering the reaction furnace, has the beneficial effect of improving the quality of the plated layer, and specifically has the following technical scheme: an automatic CVD gas deposition device with controllable gas temperature supply comprises sequentially connected segmented reciprocating pressurizing mechanism, gas storage and heating mechanism and CVD reaction furnace, the segmented reciprocating pressurizing mechanism comprises a gas pressurizing chamber, the gas pressurizing chamber is divided into multiple chambers, each chamber of the gas pressurizing chamber is provided with a push plate, the push plate is connected with a pushing assembly, the peripheral side of the push plate is in sealed contact with the gas pressurizing chamber, the push plate is connected with the top of the gas pressurizing chamber through elastic pieces, the top plate of the gas pressurizing chamber and the push plate are respectively communicated with a gas storage source, the bottom plate of the gas pressurizing chamber and the push plate are respectively communicated with the gas storage and heating mechanism, and the cavity of the gas storage and heating mechanism corresponds to each chamber of the gas pressurizing chamber.

Description

Technical Field

[0001] This invention relates to the field of vapor deposition furnace technology, and in particular to an automated CVD vapor deposition equipment and method with controllable gas temperature supply. Background Technology

[0002] The statements in this section are merely background information related to the present invention and do not necessarily constitute prior art.

[0003] Chemical vapor deposition (CVD) furnaces are the core equipment for the preparation of tantalum carbide and porous tantalum. They generate deposition gases by reacting metallic tantalum raw materials with gases such as Cl2 at high temperatures. These gases then contact the substrate surface, depositing a tantalum coating. Maintaining the reaction rate and temperature during the reaction is crucial. When the gas tank is full, the pressure of the gas introduced into the furnace is sufficient, allowing for a stable gas output rate. Conversely, when the gas tank is deficient, the pressure decreases when the gas is introduced into the furnace, failing to maintain a stable gas output. This negatively impacts the gas reaction rate and the formation of deposited reactants, ultimately leading to a decrease in product yield.

[0004] When gas enters the CVD reactor, it undergoes heat exchange as it moves from a low-temperature environment to a high-temperature environment. This causes temperature fluctuations in the furnace, making it difficult to maintain stability. Consequently, the gas reaction rate and the formation of deposited reactants affect the quality of the tantalum coating product.

[0005] As mentioned above, the impact of gas pressure on product yield requires structural design of the gas pipeline and the connection between the CVD reactor and the pipeline. In the existing technology, pressure sensors are used for detection, but they cannot actively increase the gas pressure; they only monitor the pressure and trigger an alarm if the gas pressure is insufficient. There is no reasonable means to solve the above problems. In the existing technology, a preheating mechanism is added at the end of the pipeline to increase the gas temperature, but the preheating capacity is limited. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the purpose of this invention is to provide an automated CVD vapor deposition equipment with controllable gas temperature supply. This equipment can adjust the gas pressure and temperature to ensure that the gas enters the CVD reactor at the set pressure and temperature requirements, thereby ensuring the stability of the deposition and improving the yield of tantalum coating products.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0008] An automated CVD vapor deposition equipment with controllable gas temperature supply includes a segmented reciprocating pressurization mechanism, a gas storage and heating mechanism, and a CVD reactor connected in sequence. The segmented reciprocating pressurization mechanism includes a gas pressurization chamber, which is divided into multiple chambers. Each chamber of the gas pressurization chamber is equipped with a pusher plate, which is connected to a pushing assembly. The periphery of the pusher plate is in sealed contact with the gas pressurization chamber. The pusher plate is connected to the top of the gas pressurization chamber through an elastic element. The top plate of the gas pressurization chamber and the pusher plate are respectively connected to a gas storage source. The bottom plate of the gas pressurization chamber and the pusher plate are respectively connected to the gas storage and heating mechanism. The gas storage and heating mechanism is divided into multiple cavities, and each cavity of the gas storage and heating mechanism corresponds to one of the chambers of the gas pressurization chamber. A substrate support is provided inside the CVD reactor.

[0009] As described above, in an automated CVD vapor deposition apparatus with controllable gas temperature supply, the gas storage source is connected to the top plate and push plate of the gas pressurization chamber via pressurized inlet pipes. Each pressurized inlet pipe is equipped with a valve. The bottom plate and push plate of the gas pressurization chamber are connected to the gas storage heating mechanism via pressurized outlet pipes. Each pressurized outlet pipe is equipped with a valve, and each valve is connected to a control component.

[0010] As described above, in an automated CVD vapor deposition apparatus with controllable gas temperature supply, each chamber of the gas pressurization chamber is equipped with a pressure sensor, which is connected to a control component.

[0011] The control component is connected to the driving component, the gas storage and heating mechanism, and the CVD reactor, respectively.

[0012] As described above, in an automated CVD vapor deposition apparatus with controllable gas temperature supply, a portion of the pressurized inlet pipe passes through the top of the gas pressurization chamber and connects to the pusher plate. The pusher plate has an opening that allows the pressurized inlet pipe to communicate with the area below the pusher plate. The portion of the pressurized inlet pipe inside the gas pressurization chamber is a telescopic pipe.

[0013] The pressurized exhaust pipe passes through the bottom of the gas pressurization chamber and connects to the push plate. The push plate has an opening that allows the pressurized exhaust pipe to communicate with the area on the upper side of the push plate. The part of the pressurized exhaust pipe inside the gas pressurization chamber is a telescopic pipe.

[0014] As described above, an automated CVD vapor deposition apparatus with controllable gas temperature supply includes a push rod assembly comprising a push rod and a worm gear assembly. The worm gear assembly includes a rotatable worm and a worm wheel. The worm is embedded inside the push rod. The push rod passes through a support platform and is connected to the push plate. The push rod has an opening that allows the worm wheel to mesh with the worm. The worm wheel is fixed to the support platform, which is located on top of the gas pressurization chamber.

[0015] The flow rate of the gas output from the gas booster chamber is obtained by the area of ​​the single region of the pusher plate, the angular velocity of the worm gear assembly, and the motion time of the worm gear.

[0016] In the automated CVD vapor deposition equipment with controllable gas temperature supply as described above, the number of worm gear assemblies corresponds to the number of chambers in the gas pressurization chamber, and all the worm gears are fixed to the worm gear fixing table, which is supported by the support platform.

[0017] As described above, an automated CVD vapor deposition equipment with controllable gas temperature supply includes a gas storage and heating mechanism comprising a housing, wherein the housing contains the aforementioned cavities, and each cavity contains a heating resistance wire, which is arranged at the top and bottom of the cavity.

[0018] The heating resistance wire includes a gate-shaped section and an S-shaped section. The S-shaped section is located inside the gate-shaped section, and the two ends of the S-shaped section are connected to the two ends of the gate-shaped section respectively. There is a gap between the gate-shaped section and the S-shaped section of the heating resistance wire.

[0019] As described above, in an automated CVD vapor deposition apparatus with controllable gas temperature supply, the segmented reciprocating pressurization mechanism is positioned above the gas storage and heating mechanism, which in turn is positioned above the CVD reactor.

[0020] As described above, an automated CVD vapor deposition equipment with controllable gas temperature supply includes a detachably connected upper CVD furnace body and a lower CVD furnace body. The upper CVD furnace body is equipped with heating components and an insulation layer. A furnace body air inlet channel is provided at the top of the upper CVD furnace body. The furnace body air inlet channel is supported by a channel fixing plate located inside the upper CVD furnace body. The end of the furnace body air inlet channel is inclined relative to the center line of the CVD furnace. The lower CVD furnace body is equipped with the aforementioned substrate support platform to support the substrate.

[0021] Secondly, the present invention also provides an automated CVD vapor deposition equipment method with controllable gas temperature supply, which employs the aforementioned automated CVD vapor deposition equipment with controllable gas temperature supply [1], and includes the following contents:

[0022] When the gas source is turned on, the gas enters the area below the corresponding push plate in the segmented reciprocating pressurization mechanism, which drives the component to work and pushes the push plate down to press the gas, increasing the gas pressure. After the gas pressure below the push plate reaches the preset pressure, the gas enters the gas storage heating mechanism. When the gas pressure in the gas storage heating mechanism does not reach the preset value, the component is driven to move in the opposite direction, starting the upward pressurization stage. The push plate squeezes the gas upward to increase the gas pressure. When the gas pressure above the push plate reaches the pressure target value, the gas enters the gas storage heating mechanism.

[0023] When the gas enters the gas storage and heating mechanism and reaches the preset temperature, the gas flows in through the segmented reciprocating pressurization mechanism and flows out into the CVD reactor, achieving a continuous gas supply. After the gas is collected in the CVD reactor, it reacts to generate deposition gas. The deposition gas contacts the substrate surface and is deposited on the surface to form a coating.

[0024] The beneficial effects of the present invention are as follows:

[0025] 1) This invention provides a CVD vapor deposition furnace, which is equipped with a segmented reciprocating pressurization mechanism and a gas storage and heating mechanism on the inlet side of the CVD reactor. The gas pressurization chamber is divided into multiple chambers, each chamber is used to introduce different gases or powders. Each chamber is divided into two areas by a pusher plate. The top plate area of ​​the pressurization chamber and the pusher plate are respectively connected to the gas storage source, and the bottom plate area of ​​the pressurization chamber and the pusher plate are respectively connected to the gas storage and heating mechanism. By pushing the pusher plate through the pusher assembly, the pusher plate can be compressed to increase the gas pressure. This allows the gas to enter the gas storage and heating mechanism at a set pressure and be heated. After heating, the gas is introduced into the CVD reactor. This ensures that the gas pressure is kept constant while the gas temperature is kept constant, so that the gas reaction rate is stable and the furnace temperature is constant, thereby ensuring the stability of the deposition formation.

[0026] 2) In this invention, the gas pressurization chamber has two pressurization processes: a downward pressurization process and an upward pressurization process. The downward pressurization process is performed first. If the gas pressure does not reach the preset value after the downward pressurization process is completed, the upward pressurization process is activated. The two pressurization processes effectively improve the pressurization efficiency. Moreover, the indoor parts of the pressurization inlet pipe and the pressurization outlet pipe in the gas pressurization chamber are telescopic pipes, which ensure that they can extend and retract with the movement of the push plate. The push plate can return to its original position under the action of the elastic element.

[0027] 3) In this invention, a heating resistance wire is installed inside the gas storage heating mechanism. The heating resistance wire is located at the top and bottom of the cavity, which helps to ensure the uniformity of the gas inside the cavity. The heating resistance wire includes a gate-shaped section and an S-shaped section. There is a gap between the gate-shaped section and the S-shaped section of the heating resistance wire, which not only increases the heating area of ​​the heating resistance wire, but also does not obstruct the passage of gas.

[0028] 4) In this invention, the flow rate of the gas output from the gas booster chamber is obtained by the area of ​​a single region of the push plate, the angular velocity of the worm gear assembly, and the motion time of the worm gear. By adjusting the above factors, the flow rate of the gas output from the gas booster chamber can be adjusted. Attached Figure Description

[0029] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0030] Figure 1 This is a schematic diagram of an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0031] Figure 2 This is a schematic diagram of a segmented reciprocating pressurization mechanism in an automated CVD vapor deposition apparatus with controllable gas temperature supply, according to one or more embodiments of the present invention.

[0032] Figure 3 This is a schematic diagram of the valve at the dual-pass gas pipeline in an automated CVD vapor deposition equipment with controllable gas temperature supply according to one or more embodiments of the present invention.

[0033] Figure 4 This is a schematic diagram of a rotating motor controlling a valve plate in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0034] Figure 5 This is a schematic diagram of a driving component in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0035] Figure 6 This is a schematic diagram of the transverse cross-section of the driving component in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0036] Figure 7 This is a cross-sectional view of a segmented pressurization reciprocating mechanism in an automated CVD vapor deposition apparatus with controllable gas temperature supply, according to one or more embodiments of the present invention.

[0037] Figure 8 This is a schematic diagram of a gas storage and heating mechanism in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0038] Figure 9 This is a cross-sectional view of the gas storage and heating mechanism in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0039] Figure 10 This is a schematic diagram of the CVD reactor in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0040] Figure 11 This is a cross-sectional view of the CVD reactor in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0041] Figure 12 This is a flow chart of the segmented reciprocating pressurization mechanism in an automated CVD vapor deposition equipment with controllable gas temperature supply, according to one or more embodiments of the present invention.

[0042] Figure 13 This is a schematic diagram of the heating resistance wire in an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0043] Figure 14 This is a flowchart illustrating the overall workflow of an automated CVD vapor deposition apparatus with controllable gas temperature supply according to one or more embodiments of the present invention.

[0044] Figure 15 This is a diagram of the gas reaction process inside the CVD reactor in an automated CVD vapor deposition apparatus with controllable gas temperature supply, according to one or more embodiments of the present invention.

[0045] The diagram exaggerates the spacing or dimensions between parts to show their positions; the diagram is for illustrative purposes only.

[0046] The components include: Ⅰ. Segmented reciprocating pressurization mechanism; Ⅰ-1. Air tank; Ⅰ-2. Air tank delivery pipe; Ⅰ-3. Dual-way air delivery pipeline; Ⅰ-3-1. Sealing ring retainer; Ⅰ-3-2. Sealing ring; Ⅰ-3-3. Valve plate; Ⅰ-3-4. Power interface; Ⅰ-3-5. Bearing mounting seat; Ⅰ-3-6. Ball bearing; Ⅰ-3-7. Rotary motor; Ⅰ-4. Motor; Ⅰ-5. Push rod assembly; Ⅰ-5-1. Bearing; Ⅰ-5-2. Worm gear; Ⅰ-5-3. Push rod, I-6. Worm gear fixing platform, I-6-1. Worm gear, I-7. Support platform, I-8. Gas pressurization chamber, I-8-1. Top plate, I-8-2. Return spring, I-8-3. Container wall, I-8-4. Push plate, I-8-5. Pressure sensor, I-8-6. Divider plate, I-8-7. Bottom plate, I-9. Lifting pressurization outlet pipe, I-10. Depressurizing pressurization outlet pipe, I-11. Lifting pressurization inlet pipe, I-12. Depressurizing inlet pipe;

[0047] II. Gas storage and heating mechanism; II-1. Air inlet; II-2. Gas storage and heating chamber; II-2-1. Top plate; II-2-2. Heating resistance wire; II-2-3. Short side plate; II-2-4. Dividing cross plate; II-2-5. Sealing ring; II-2-6. Bottom plate;

[0048] III. CVD reactor, III-1. Infrared thermometer, III-2. CVD upper furnace body, III-2-1. Furnace body air inlet channel, III-2-2. Channel fixing plate, III-2-3. Graphite heat conduction rod, III-2-4. Insulation layer, III-2-5. Substrate support platform, III-3. CVD lower furnace body, III-3-1. Exhaust gas discharge channel, III-4. Vacuum pump, III-5. Tail gas processor. Detailed Implementation

[0049] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the invention. Unless otherwise specified, all technical and scientific terms used in this invention have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0050] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of exemplary embodiments according to the invention. As used herein, unless otherwise expressly indicated by the invention, the singular form is also intended to include the plural form. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0051] As described in the background section, existing CVD vapor deposition furnaces cannot guarantee the pressure and temperature of the gas entering the reactor. To solve the above technical problems, this invention proposes an automated CVD vapor deposition equipment with controllable gas temperature supply.

[0052] Example 1

[0053] In a typical embodiment of the present invention, reference is made to Figure 1 As shown, an automated CVD vapor deposition apparatus with controllable gas temperature supply includes:

[0054] Segmented reciprocating pressurization mechanism I: The segmented reciprocating pressurization mechanism is used to increase the pressure of the gas in the gas tank, while stably controlling the output of the gas flow rate;

[0055] Gas storage and heating mechanism II is connected to the pressurization mechanism and the CVD reactor. It heats the gas in the gas tank to a predetermined temperature, reducing the damage to the constant temperature environment caused by the gas entering the furnace.

[0056] CVD reactor III provides a constant temperature reaction environment for the deposition reaction between tantalum source gas and substrate to form a tantalum coating.

[0057] refer to Figure 2As shown, the segmented reciprocating pressurization mechanism I includes a gas storage tank I-1, a gas tank delivery pipe I-2, a dual-way gas delivery pipe I-3, a motor I-4, a push rod assembly I-5, a worm gear fixing platform I-6, a support platform I-7, a gas pressurization chamber I-8, an upward pressurization outlet pipe I-9, a downward pressurization outlet pipe I-10, an upward pressurization inlet pipe I-11, and a downward pressurization inlet pipe I-12. The gas storage tank I-1 is connected to one end of the gas tank delivery pipe I-2 via a flange. The gas in the gas storage tank I-1 is controlled by opening and closing the gas valve on the top of the gas storage tank I-1. The other end of the gas tank delivery pipe I-2 is connected to the inlet port of the dual-way gas delivery pipe I-3 via a flange. After the gas enters through the inlet port of the dual-way gas delivery pipe I-3, the gas is split.

[0058] The dual-channel gas pipeline I-3 includes an upward booster inlet pipe I-11 and a downward booster inlet pipe I-12. Valves are installed inside both the upward booster inlet pipe I-11 and the downward booster inlet pipe I-12 to control gas delivery. Each valve includes a valve plate I-3-3, which is installed using a sealing ring and a retaining ring. (See reference...) Figure 3 As shown, the sealing ring fixing ring I-3-1 is an annular structure. The sealing ring fixing ring I-3-1 is fitted to the pipe wall (inlet pipe or outlet pipe) and is fixed to the pipe wall by bolts. The sealing ring fixing ring I-3-1 has grooves on both sides, and the sealing ring I-3-2 is placed in the grooves to prevent gas leakage. The center of the sealing ring fixing ring I-3-1 surrounds the valve plate I-3-3. When the valve plate I-3-3 is parallel to the pipe section it is in, gas can pass through. When the valve plate I-3-3 is perpendicular to the pipe section it is in, the upper half ring and the lower half ring of the valve plate I-3-3 contact the front and rear sealing rings I-3-2 respectively to form a sealed space to block the gas from passing through. The center of the valve plate I-3-3 has a power interface I-3-4, which is connected to a rotary motor. The rotary motor controls the rotation of the valve plate.

[0059] refer to Figure 4 As shown, the bearing mounting seat I-3-5 is bolted to the pipe wall, the ball bearing I-3-6 is mounted on the bearing mounting seat I-3-5, and the output shaft of the rotating motor I-3-7 is connected to the valve plate I-3-3 through the center of the bearing mounting seat I-3-5, providing rotational power to the valve plate I-3-3 and controlling the rotation of the valve plate I-3-3 to realize the passage and obstruction of gas.

[0060] refer to Figure 5As shown, the power mechanism of the segmented reciprocating booster mechanism I is a push rod assembly I-5. The push rod assembly includes a push rod I-5-3, a motor I-4, a bearing I-5-1, a worm gear I-5-2, a worm gear mounting platform I-6, and a worm gear I-6-1. The motor I-4 is bolted to the top of the push rod I-5-3. The output shaft of the motor I-4 is connected to the worm gear I-5-2 to provide rotational power to the worm gear. The worm gear I-5-2 is located inside the push rod. The upper and lower shafts of the worm gear I-5-2 are respectively fitted with the bearing I-5-1. The bearing I-5-1 is mounted at the bearing mounting seat. The fixed seat is placed inside the push rod. The worm gear I-5-2 meshes with the worm wheel I-6-1. The worm wheel I-6-1 is fixed to the worm wheel fixing platform I-6. The push rod assembly I-5 moves up and down as a whole through the rotation of the worm gear I-5-2 and the meshing with the worm wheel I-6-1. The worm wheel fixing platform I-6 is fixed to the support platform I-7 with bolts. The push rod passes through the support platform to meet the stroke height required by the push rod assembly I-5. The worm gear is embedded in the upper half of the push rod in the push rod assembly I-5. The bottom of the push rod is connected to the push plate I-8-4 with bolts. The push rod has an opening to facilitate the meshing of the worm wheel and the worm gear.

[0061] refer to Figure 6 As shown, there are four worm gears I-5-2 arranged in two rows and two columns. The four worm gears I-5-2 are connected to the same worm wheel fixing platform I-6. The worm wheel fixing platform I-6 includes a platform and two annular shells. The annular shells surround the two worm gears and are connected to the platform. The worm wheel is fixed to the outside of the annular shells.

[0062] refer to Figure 5 and Figure 7 As shown, the support platform I-7 is fixed to the top plate I-8-1 of the gas pressurization chamber I-8 by bolts. The top plate I-8-1, the container wall I-8-3, the partition plate I-8-6, and the bottom plate I-8-7 constitute the gas pressurization chamber I-8. The gas pressurization chamber I-8 is a ring-shaped structure. The container wall I-8-3 is fixed to the bottom plate I-8-7 by bolts. The outermost ring of the bottom plate I-8-7 is provided with a protrusion to form a groove with the outer periphery of the container wall I-8-3 to place a sealing ring to ensure the airtightness of the gas pressurization chamber I-8.

[0063] As is easily understood, the gas pressurization chamber I-8 is divided into four areas by partition plate I-8-6. Each of the four areas is connected to a corresponding gas storage source, such as a gas storage tank. Partition plate I-8-6 is bolted to the bottom plate I-8-7, and a sealing ring is installed at the connection point to ensure the sealing of each area. The top plate I-8-1 is bolted to the container wall I-8-3. Holes are drilled in both the top plate I-8-1 and the bottom plate I-8-7 to install the pressurization inlet and outlet pipes, and sealing rings are installed at these holes. The push rod assembly I-5 passes through the top plate I-8-1 into the gas pressurization chamber and is bolted to the push plate I-8-4. The lifting pressurization outlet pipe I-9 is bolted to the push plate I-8-4. The push plate is designed to be used in conjunction with the lifting... The connecting hole of the booster outlet pipe I-9 is connected to the push plate edge, which is equipped with a sealing ring to achieve sealing and output of gas after lifting and pressurization. The indoor part of the lifting booster outlet pipe I-9 adopts a contraction tube. The outer return spring I-8-2 is connected between the top plate I-8-1 and the push plate I-8-4, and the outer return spring I-8-2 forms support and expansion and contraction. The downward booster outlet pipe I-10 is fixed to the bottom plate I-8-7 by bolts to achieve the output of gas after downward pressurization. The upper body booster inlet pipe I-11 and the downward booster inlet pipe I-12 are connected to the top plate I-8-1 by bolts. The indoor part of the downward booster inlet pipe I-12 adopts the same pipe structure as the lifting booster outlet pipe I-9, both of which adopt a contraction tube.

[0064] The gas pressurization chamber operates in two pressurization phases: In the downward pressurization phase, gas enters the chamber through the downward pressurization inlet pipe I-12. Once full, the pusher assembly I-5 powers the pusher plate I-8-4 downwards, while the upward pressurization inlet pipe I-11 begins intake as an auxiliary to the downward pressurization. The upward pressurization outlet pipe I-9 contracts to release space, and the pusher plate I-8-4 compresses the gas, increasing its pressure. The pressure sensor I-8-5 transmits the current (below the pusher plate) chamber pressure value. When the target pressure value is reached, the valve inside the downward pressurization outlet pipe I-10 opens, allowing the gas to proceed to the next phase. After the gas passes through, the upward pressurization phase begins, the valve inside the downward pressurization outlet pipe I-10 closes, and downward pressurization intake resumes. Air continuously enters through pipe I-12. Push rod assembly I-5 drives push plate I-8-4 to rise, causing the chamber of the pressurized intake pipe I-12 to contract and release space. Push plate I-8-4 compresses the gas upward to increase the gas pressure. The pressure sensor I-8-5 transmits the current chamber pressure value (on the upper part of the push plate). When the pressure target value is reached, the valve inside the pressurized outlet pipe I-9 opens, and the gas enters the next section. The four areas divided by partition plate I-8-6 can be pressurized independently. By controlling the movement speed of the worm gear assembly in each area of ​​push rod assembly I-5, the gas pressure and output speed are controlled. The overall structure uses the reciprocating motion to achieve the control of the pressurization and output speed of the two gas stages, improving work efficiency.

[0065] refer to Figure 8 As shown, the gas storage and heating mechanism II includes an air inlet II-1 and a gas storage and heating chamber II-2, as referenced. Figure 9 As shown, the air inlet II-1 is drilled into the upper cover plate II-2-1 of the gas storage and heating chamber II-2. The gas storage and heating chamber II-2 is supported by four short side plates II-2-3 connected to the base plate II-2-6 by bolts. The bottom of the dividing cross plate II-2-4 is connected to the base plate II-2-6 by bolts. The sides of the dividing cross plate II-2-4 are respectively connected to the center of the four short side plates II-2-3 by bolts, thus dividing the whole into four areas to prevent different reacting gases from interfering with each other. The four sides of the upper cover plate II-2-1 The four short side plates Ⅱ-2-3 are connected by bolts. Grooves are provided at the joints of each plate to hold sealing rings Ⅱ-2-5 to prevent heat and gas leakage. Three heating resistance wires Ⅱ-2-2 are arranged in each area. The heat-conducting cover of the first heating resistance wire Ⅱ-2-2 is connected to the upper cover plate Ⅱ-2-1 by bolts and is located at the center of the area. The remaining two heating resistance wires Ⅱ-2-2 are connected to the vent of the bottom plate Ⅱ-2-6 by bolts. The two heating resistance wires on the bottom plate are symmetrically distributed.

[0066] refer to Figure 13 As shown, the heating resistance wire II-2-2 inside the gas storage heating mechanism II includes a gate-shaped section and an S-shaped section. The S-shaped section is placed inside the gate-shaped section, and the two ends of the S-shaped section are connected to the two ends of the gate-shaped section respectively. There is a gap between the gate-shaped section and the S-shaped section of the heating resistance wire. This is to prevent the flow of gas from being blocked and to increase the heating area between the gas and the resistance wire, so as to heat up faster in a short time and improve working efficiency.

[0067] The working process of the gas storage and heating mechanism II is as follows: gas is forced into the gas storage and heating chamber II-2 by the segmented reciprocating pressurization mechanism I. The gas diffuses and fills the chamber space, and the heating resistance wire II-2-2 begins to heat. The segmented reciprocating pressurization mechanism I continuously pressurizes the gas, and the outlet valve of the gas storage and heating chamber II-2 is closed to form a sealed space, which causes the gas pressure and temperature to rise continuously. When the temperature reaches the preset value, the outlet valve of the gas storage and heating chamber II-2 opens, and the gas is continuously pressed in by the segmented reciprocating pressurization mechanism I, ensuring that the gas state changes little in the gas storage and heating chamber II-2 and that the inflow and outflow are balanced. After being heated and pressurized, the gas enters the CVD reactor to begin the reaction.

[0068] refer to Figure 10As shown, the CVD reactor includes an infrared thermometer III-1, an upper CVD furnace body III-2, a lower CVD furnace body III-3, a vacuum pump III-4, and a tail gas processor III-5. The upper CVD furnace body III-2 and the lower CVD furnace body III-3 constitute the CVD reactor. The infrared thermometer III-1 is located at the upper CVD furnace body III-2. The height of the lower CVD furnace body is less than the height of the upper CVD furnace body. A hole is drilled on one side of the lower CVD furnace body III-3, and the vacuum pump III-4 is connected to it through a flange and bolts. The vacuum pump III-4 is used to discharge the reaction waste gas and the remaining reaction materials. The discharged waste gas and reaction materials enter the tail gas processor, which is an existing plasma tail gas purifier.

[0069] refer to Figure 11 As shown, the furnace inlet channel Ⅲ-2-1 passes through the upper half of the CVD furnace body Ⅲ-2, and also passes through the channel fixing plate Ⅲ-2-2. The interface is connected by flanges and bolts. The ends of the four furnace inlet channels Ⅲ-2-1 are inclined at a 45-degree angle relative to the centerline of the CVD reactor, so as to achieve the immediate collection of reaction gases and reduce the reaction time after diffusion. The channel fixing plate Ⅲ-2-2 is fixed inside the upper half of the CVD furnace body Ⅲ-2 with bolts as a support plate for the furnace components. The graphite heat-conducting rod Ⅲ-2-3 is connected by bolts. The bolts are fixed to the channel fixing plate Ⅲ-2-2. Six heat-conducting rods form a ring to provide high temperature for the gas inside the furnace. In order to maintain a constant temperature environment inside the furnace, the insulation layer Ⅲ-2-4 is ring-shaped and placed in the circumference of the heat-conducting rods. The insulation layer is placed inside the upper half of the CVD furnace body Ⅲ-2 and fixed to the inner wall of the upper half of the CVD furnace body Ⅲ-2 by bolts. The substrate support platform Ⅲ-2-5 is located in the middle and lower part of the insulation layer Ⅲ-2-4 to support the substrate that needs to be deposited tantalum. The substrate support platform Ⅲ-2-5 is connected to the lower half of the CVD furnace body Ⅲ-3 by bolts.

[0070] It is easy to understand that the tops of the six heat-conducting rods are fixed to the channel fixing plate Ⅲ-2-2 by the first bracket, and the bottoms of the six heat-conducting rods are supported by the second bracket, which is set lower than the substrate support Ⅲ-2-5.

[0071] refer to Figure 12 As shown, the first image shows the downward pressurization process, and the second image shows the upward pressurization process. Both steps increase the gas pressure by squeezing the gas through the push plate. Through motion analysis, the output torque of the motor and the torque of the worm gear assembly are calculated according to formulas (1), (2), (3), and (4):

[0072] (1)

[0073] (2)

[0074] (3)

[0075] Torque is transmitted to the worm gear assembly:

[0076] (4)

[0077] Among them, w d It is the angular velocity of the electric motor, n d It is the motor speed, T d It is the output torque of the electric motor, P d It is the power of the electric motor, n w T is the worm gear speed, i is the transmission ratio, and T is the worm gear rotation speed. w It is the torque of the worm gear, η w It refers to the efficiency of the worm gear transmission.

[0078] The output rotation of the worm gear assembly is converted into the linear motion of the push plate through the structure. According to formulas (5) and (6), the following can be calculated:

[0079] (5)

[0080] (6)

[0081] Among them, F t The force on the push plate is r, which is the equivalent radius of the worm gear converting into linear motion, and s is the force on the push plate. t It is the displacement of the push plate, ω w t is the angular velocity of the worm gear, and t is the motion time.

[0082] When a gas is compressed, its pressure increases inside a closed container. This can be calculated using the formula:

[0083] Single-zone push plate area:

[0084] (7)

[0085] Initial volume of the segmented pressurized chamber:

[0086] (8)

[0087] Compression chamber, changes in internal volume and gas pressure:

[0088] (9)

[0089] (10)

[0090] Among them, A t It is the area of ​​a single region of the push plate, r t It is the radius of the push plate, V s It is the initial volume of the segmented pressurization chamber, h s It is the height of the segmented pressurization chamber, rs It is the radius of the segmented pressurization chamber, V b It is the volume of the segmented pressurized chamber after compression, P q It is the pressure of the gas after compression, P s It is the initial gas pressure.

[0091] According to the formula, the flow rate of gas output after the pusher plate extrudes is:

[0092] (11)

[0093] Among them, Q q It is the flow rate of the gas output.

[0094] In other words, the flow rate of the gas output from the gas booster chamber is obtained by the area of ​​the single region of the push plate, the angular velocity of the worm gear assembly, and the motion time of the worm gear. By adjusting the above factors, the flow rate of the gas output from the gas booster chamber can be regulated.

[0095] Additionally, refer to Figure 1 As shown, a segmented reciprocating pressurization mechanism is supported by a bracket. A gas storage and heating mechanism is set below the segmented reciprocating pressurization mechanism. The CVD reactor is placed below the gas storage and heating mechanism. The gas storage tank is placed on the top platform, which is supported by a bracket. The bracket also has a middle platform, which is placed around the CVD reactor. A ladder is set on the side of the top platform.

[0096] Example 2

[0097] This embodiment provides an automated CVD vapor deposition equipment method with controllable gas temperature supply, employing the automated CVD vapor deposition equipment with controllable gas temperature supply described in Embodiment 1, and includes the following:

[0098] refer to Figure 14 As shown, the gas tank valve opens, and gas rushes out into the A-channel inlet pipe (referring to the downward pressure boosting inlet pipe). The A-channel inlet pipe valve opens, and the gas passes through into the segmented reciprocating boosting mechanism. The push rod assembly moves to push the push plate downward to press the gas, increasing the gas pressure. The pressure sensor detects the pressure value. When the preset pressure is reached, the A-channel outlet pipe (downward pressure boosting outlet pipe) valve opens, and the gas enters the gas storage heating box. When the pressure does not reach the preset value, the A-channel inlet pipe continues to supply gas, and the A-channel outlet pipe valve closes. After the push rod assembly reaches its maximum stroke, it moves in the reverse direction, starting the upward boosting stage. When the gas enters the gas storage heating box and reaches the preset temperature, the gas flows in through the boosting mechanism and flows out into the CVD reactor, achieving a continuous gas supply. After the gas gathers in the CVD reactor, it reacts to generate deposition gas. The deposition gas contacts the substrate surface and deposits on the surface to form a coating.

[0099] In addition, the B-channel intake pipe refers to the upward boosting intake pipe, and the B-channel exhaust pipe refers to the downward boosting exhaust pipe.

[0100] refer to Figure 15 As shown, the protective gas carries tantalum powder and other gases into the CVD reactor. They converge and collide through the inclined channel, and then react to generate deposition gas in the high-temperature environment inside the furnace. The deposition gas contacts the substrate surface to form a coating. The remaining reacted and unreacted gases are extracted by a vacuum pump for waste gas treatment.

[0101] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An automated CVD vapor deposition apparatus with controllable gas temperature supply, characterized in that, The system includes a segmented reciprocating pressurization mechanism, a gas storage and heating mechanism, and a CVD reactor connected in sequence. The segmented reciprocating pressurization mechanism includes a gas pressurization chamber, which is divided into multiple chambers. Each chamber is used to introduce different gases. Each chamber of the gas pressurization chamber is equipped with a pusher plate, which is connected to a pushing assembly. The periphery of the pusher plate is in sealed contact with the gas pressurization chamber. The pusher plate is connected to the top of the gas pressurization chamber through an elastic element. The top plate of the gas pressurization chamber and the pusher plate are respectively connected to a gas storage source. The bottom plate of the gas pressurization chamber and the pusher plate are respectively connected to the gas storage and heating mechanism. The gas storage and heating mechanism is divided into multiple cavities, and the cavities of the gas storage and heating mechanism correspond one-to-one with the chambers of the gas pressurization chamber. A substrate support is provided inside the CVD reactor. The gas storage source is connected to the top plate and push plate of the gas pressurization chamber via a pressurized inlet pipe. Part of the pressurized inlet pipe passes through the top of the gas pressurization chamber and connects to the push plate. The push plate has an opening that allows the pressurized inlet pipe to communicate with the area below the push plate. The portion of the pressurized inlet pipe inside the gas pressurization chamber is a telescopic pipe. Part of the pressurized outlet pipe passes through the bottom of the gas pressurization chamber and connects to the push plate. The push plate has an opening that allows the pressurized outlet pipe to communicate with the area above the push plate. The portion of the pressurized outlet pipe inside the gas pressurization chamber is a telescopic pipe. The gas storage heating mechanism includes a box, and the cavity is set inside the box. Each cavity is equipped with a heating resistance wire, which is arranged at the top and bottom of the cavity. The heating resistance wire includes a gate-shaped section and an S-shaped section. The S-shaped section is placed inside the gate-shaped section, and the two ends of the S-shaped section are respectively connected to the two ends of the gate-shaped section. A gap is left between the gate-shaped section and the S-shaped section of the heating resistance wire.

2. The automated CVD vapor deposition equipment with controllable gas temperature supply according to claim 1, characterized in that, Each pressurized air inlet pipe is equipped with a valve. The bottom plate and push plate of the gas pressurization chamber are connected to the gas storage and heating mechanism through pressurized air outlet pipes. Each pressurized air outlet pipe is equipped with a valve, and each valve is connected to the control component.

3. The automated CVD vapor deposition equipment with controllable gas temperature supply according to claim 2, characterized in that, Each chamber of the gas pressurization chamber is equipped with a pressure sensor, which is connected to the control component. The control component is connected to the driving component, the gas storage and heating mechanism, and the CVD reactor, respectively.

4. The automated CVD vapor deposition equipment with controllable gas temperature supply according to claim 1, characterized in that, The pushing assembly includes a push rod and a worm gear assembly. The worm gear assembly includes a rotatable worm and a worm wheel. The worm is embedded inside the push rod. The push rod passes through the support platform and is connected to the push plate. The push rod has an opening so that the worm wheel meshes with the worm. The worm wheel is fixed at the support platform, which is located on top of the gas pressurization chamber. The flow rate of the gas output from the gas booster chamber is obtained by the area of ​​a single region of the pusher plate, the angular velocity of the worm gear assembly, and the motion time of the worm gear.

5. An automated CVD vapor deposition apparatus with controllable gas temperature supply according to claim 4, characterized in that, The number of worm gear assemblies corresponds to the number of chambers in the gas pressurization chamber. All the worm gears are fixed to the worm gear fixing platform, which is supported by the support platform.

6. An automated CVD vapor deposition apparatus with controllable gas temperature supply according to claim 1, characterized in that, The segmented reciprocating pressurization mechanism is positioned above the gas storage and heating mechanism, which in turn is positioned above the CVD reactor.

7. An automated CVD vapor deposition apparatus with controllable gas temperature supply according to claim 1, characterized in that, The CVD reactor includes a detachably connected upper CVD furnace body and a lower CVD furnace body. The upper CVD furnace body is equipped with heating components and an insulation layer. The top of the upper CVD furnace body is provided with a furnace body air inlet channel, which is supported by a channel fixing plate located inside the upper CVD furnace body. The end of the furnace body air inlet channel is inclined relative to the center line of the CVD reactor. The lower CVD furnace body is equipped with the aforementioned substrate support platform to support the substrate.

8. An automated CVD vapor deposition apparatus and method with controllable gas temperature supply, characterized in that, An automated CVD vapor deposition apparatus with controllable gas temperature supply according to any one of claims 1-7 includes the following components: When the gas source is turned on, the gas enters the area below the corresponding push plate in the segmented reciprocating pressurization mechanism, which drives the component to work and pushes the push plate down to press the gas, increasing the gas pressure. After the gas pressure below the push plate reaches the preset pressure, the gas enters the gas storage heating mechanism. When the gas pressure in the gas storage heating mechanism does not reach the preset value, the component is driven to move in the opposite direction, starting the upward pressurization stage. The push plate squeezes the gas upward to increase the gas pressure. When the gas pressure above the push plate reaches the pressure target value, the gas enters the gas storage heating mechanism. When the gas enters the gas storage and heating mechanism and reaches the preset temperature, the gas flows in through the segmented reciprocating pressurization mechanism and flows out into the CVD reactor, achieving a continuous gas supply. After the gas is collected in the CVD reactor, it reacts to generate deposition gas. The deposition gas contacts the substrate surface and is deposited on the surface to form a coating.

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