Tungsten film manufacturing equipment and method
By covering the wafer surface with a shield and etching away the tungsten layer at the wafer edge in the same equipment, the problem of non-uniform deposition caused by vapor deposition is solved, simplifying the semiconductor manufacturing process and reducing costs.
Patent Information
- Application Number
- CN202511523479.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-23
- Publication Date
- 2026-01-23
AI Technical Summary
In semiconductor manufacturing, vapor deposition processes result in non-uniform deposition of tungsten metal films at the wafer edges, leading to interfacial stress mismatch. This can easily cause film separation or peeling in subsequent processes. Furthermore, existing technologies require additional dry etching to remove the edge tungsten layer, increasing process complexity and cost.
Design a tungsten thin film fabrication equipment and method, which involves forming a tungsten layer on the wafer surface and then covering it with a shield to expose the circumferential edge region of the wafer, and then introducing etching process gas into the same equipment to remove the edge tungsten layer, thus avoiding additional dry etching processes.
It enables in-situ removal of tungsten layers at the wafer edge within the same equipment, simplifying the process and reducing manufacturing costs.
Smart Images
Figure CN121380920A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a tungsten film manufacturing device and method. BACKGROUND
[0002] In the field of semiconductor manufacturing, vapor deposition processes are widely used to form thin film structures such as metal layers, dielectric layers, etc. on the surface of a wafer. In particular, in integrated circuit manufacturing, tungsten metal layers formed on the surface of a wafer by vapor deposition processes can precisely fill vias and contact holes, thereby constructing key interconnection structures.
[0003] However, under the vapor deposition process, tungsten metal thin films are deposited non-uniformly on the wafer level at the edge of the wafer, and the tungsten layer deposited at the edge of the wafer does not match the interface stress of the previous layer, which can easily cause film separation or peeling in subsequent processes. To eliminate process hazards, an additional dry etching process is usually introduced after the vapor deposition process to remove the tungsten layer deposited at the edge of the wafer, resulting in a complex semiconductor manufacturing process and rising manufacturing costs.
[0004] Therefore, it is necessary to design a tungsten film manufacturing device and method to improve the above problems. SUMMARY
[0005] The present application provides a tungsten film manufacturing device and method to solve the technical problem that the current vapor deposition process cannot avoid the deposition of a tungsten layer at the edge of the wafer, and an additional dry etching process is required to remove the tungsten layer at the edge of the wafer.
[0006] In a first aspect, the present application provides a tungsten film manufacturing device, which comprises a process chamber, a carrying table, a shielding cover storage chamber, and a shielding mechanism.
[0007] The carrying table is arranged in the process chamber and is used to carry a wafer. The shielding cover storage chamber is arranged on one side of the process chamber. The shielding mechanism is arranged in the shielding cover storage chamber and comprises a driving mechanism and a shielding cover connected to the driving mechanism. A window is arranged on the process chamber and communicates with the shielding cover storage chamber. The window corresponds to the position of the shielding cover.
[0008] Before etching, the window is opened, the driving mechanism drives the shielding cover to pass through the window and move above the carrying table, and covers the surface of the wafer. The area of the shielding cover is smaller than the area of the wafer, and the shielding cover exposes the circumferential edge of the wafer when covering the surface of the wafer, so that the tungsten film manufacturing device can etch the film layer at the circumferential edge of the wafer.
[0009] In an example of the present application, the driving mechanism comprises a controller, a first driving mechanism and a second driving mechanism, the second driving mechanism is connected to the first driving mechanism, the shielding cover is connected to the second driving mechanism, the first driving mechanism drives the second driving mechanism to move in a horizontal direction, and the second driving mechanism drives the shielding cover to move in a direction perpendicular to the supporting table.
[0010] In an example of the present application, the shielding cover is connected to the second driving mechanism through a telescopic rod, the rod body of the telescopic rod extends in a horizontal direction, and the telescopic rod is retracted and extended to drive the shielding cover to move in a horizontal direction.
[0011] In an example of the present application, the wafer circumferential edge is a wafer region with a distance of 0-30 mm from the wafer outer edge.
[0012] In a second aspect, the present application further provides a method for manufacturing a tungsten thin film on a wafer, which comprises: providing a wafer and placing the wafer in a process cavity; introducing a reaction gas into the process cavity to form a tungsten layer on the wafer by chemical vapor deposition; covering the tungsten layer with a shielding cover to expose the tungsten layer at the wafer circumferential edge to the process cavity; introducing an etching process gas into the process cavity to etch and remove the tungsten layer exposed to the process cavity.
[0013] In an example of the present application, the etching process gas comprises at least one of hydrochloric acid and nitrogen trifluoride.
[0014] In an example of the present application, the method for forming a tungsten layer on the wafer by chemical vapor deposition comprises: forming a barrier layer on the wafer surface and in the surface pores; and forming a tungsten layer on the barrier layer, wherein the tungsten layer fills the pores.
[0015] In an example of the present application, the step of forming a tungsten layer comprises: supplying tungsten source gas and hydrogen source gas on the wafer surface to deposit a tungsten layer on the wafer surface.
[0016] In an example of the present application, the method further comprises: using a cleaning gas to purge the wafer surface to remove halogen residues on the wafer surface, wherein the cleaning gas comprises at least one of hydrogen, diborane and silane.
[0017] In an example of the present application, the wafer circumferential edge is a wafer region with a distance of 0-30 mm from the wafer outer edge.
[0018] The tungsten thin film manufacturing device and method provided by the application can realize in-situ removal of the tungsten layer deposited on the circumferential edge of the wafer in the same device after the chemical vapor deposition process is completed, without the need of additionally configuring an edge etching process and device in the subsequent process, thereby effectively saving the process procedure and reducing the manufacturing cost. BRIEF DESCRIPTION OF DRAWINGS
[0019] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the application and, together with the description, serve to explain the principles of the application. It is to be understood that the drawings are only schematic, and that they do not necessarily correspond to the actual scale.
[0020] In the drawings: Figure 1 a and Figure 1 b are a top view and a side view of a cavity of an existing chemical vapor deposition device when depositing a metal layer on a wafer surface; Figure 2 is a schematic diagram of a dry etching process for removing a metal layer on the edge of a wafer after a chemical deposition process in an existing process; Figure 3 is a side view of a cavity of a tungsten thin film manufacturing device in an embodiment of the application when the edge of the wafer is not etched; Figure 4 is a top view of a cavity of a tungsten thin film manufacturing device in an embodiment of the application when the edge of the wafer is etched; Figure 5 is a side view of a cavity of a tungsten thin film manufacturing device in an embodiment of the application when the edge of the wafer is etched.
[0021] Figure 6 is a schematic diagram of a tungsten thin film manufacturing method in an embodiment of the application; Figure 7 is a schematic diagram of a tungsten thin film manufacturing method in an embodiment of the application when depositing and etching on a wafer.
[0022] Tungsten thin film manufacturing device Tungsten thin film manufacturing device Tungsten thin film manufacturing device The reference signs are as follows: 10, wafer; 11, edge region; 20, barrier layer; 30, tungsten layer; 100, housing; 110, base; 120, process chamber; 121, shielding ring; 130, shielding cover storage chamber; 131, window; 200, supporting table; 210, rotating shaft; 220, supporting disc; 300, gas injection mechanism; 400, exhaust mechanism; 410, exhaust port; 500, shielding mechanism; 510, driving mechanism; 511, first driving mechanism; 512, second driving mechanism; 513, connecting rod; 520, shielding cover. DETAILED DESCRIPTION
[0023] Other advantages and effects of the present application will be easily understood by those skilled in the art from the description of the embodiments of the present application. The present application can also be implemented or applied in other different embodiments, and the details in the description can be modified or changed based on different views and applications without departing from the spirit of the present application. It should be noted that the embodiments and features in the embodiments below can be combined with each other without conflict. It should also be understood that the terms used in the embodiments of the present application are for describing specific embodiments, and are not intended to limit the protection scope of the present application. The test methods in the following embodiments are not specified, and are generally performed according to conventional conditions or according to the conditions recommended by the manufacturers.
[0024] It should be understood that the terms such as "upper", "lower", "left", "right", "middle", and "one" in the description are only for the convenience of clear description, and are not intended to limit the scope of the present application. Changes or adjustments of the relative relationship without substantial changes in the technical content are also considered as the scope of the present application.
[0025] Since the metal layer deposited on the bevel region of the wafer edge under the vapor deposition process is not uniform in thickness and does not match the interface stress of the previous layer of the wafer, film separation or peeling is easily caused in the subsequent process.
[0026] As shown in FIG. 1 and Figure 2 The current process increases a shielding ring 121 in the process chamber 120 of the vapor deposition equipment to cover the edge of the wafer 10 through the shielding ring 121 during the vapor deposition process, so as to prevent the formation of a metal layer on the edge of the wafer 10. However, the shielding ring 121 covering the wafer 10 cannot completely fit the bevel region of the edge of the wafer 10, and the deposition gas introduced during the deposition process is easy to diffuse at the bottom of the shielding ring 121, so that a metal layer with a relatively thin thickness is formed on the edge of the wafer 10, which still needs to introduce an additional dry etching process in the subsequent process to completely remove the film layer deposited on the edge of the wafer 10.
[0027] To solve the above problems, the present application provides a tungsten thin film manufacturing device and method. After forming a tungsten layer 30 on the surface of a wafer 10 by chemical vapor deposition, the tungsten thin film manufacturing device covers the tungsten layer 30 on the surface of the wafer 10 with a shielding cover 520, exposes the tungsten layer 30 at the circumferential edge of the wafer 10 to a process cavity 120, and then completes etching and removing the tungsten layer 30 at the edge area 11 of the wafer 10 by introducing etching process gas into the process cavity 120. The tungsten thin film manufacturing device and method realize in-situ removing of the tungsten layer 30 deposited at the edge of the wafer 10 in the same device, without the need for additional edge etching procedures and devices in subsequent processes, effectively saving the process procedures and reducing the manufacturing cost.
[0028] In a first aspect, as shown in Figures 3 to 5 The present application also provides a tungsten thin film manufacturing device, which comprises a process cavity 120, a supporting table 200, a gas injection mechanism 300, an exhaust mechanism 400 and a shielding mechanism 500.
[0029] As shown in Figures 3 to 5 The tungsten thin film manufacturing device has a shell 100, and the shell 100 has the process cavity 120 inside. The gas injection mechanism 300 is arranged at the top of the process cavity 120, and the gas injection mechanism 300 has at least one gas inlet port arranged on the inner wall of the process cavity 120 to communicate with the process cavity 120. The gas injection mechanism 300 communicates the process gas source with the gas inlet port through a pipeline, and the gas injection mechanism 300 delivers the process gas into the process cavity 120 through the gas inlet port to realize vapor deposition, etching and cleaning on the surface of the wafer 10. The exhaust mechanism 400 is arranged at the bottom of the process cavity 120, and the exhaust port 410 of the exhaust mechanism 400 is arranged on the inner wall of the process cavity 120. After the tungsten thin film manufacturing device completes the processing of the wafer 10, the exhaust mechanism 400 can exhaust the remaining gas in the process cavity 120.
[0030] As shown in Figures 3 to 5As shown, the carrier table 200 is at least partially arranged in the process cavity 120, and is used to carry the wafer 10 to be processed. The carrier table 200 comprises a rotating mechanism, a rotating shaft 210 and a carrier disc 220. The rotating mechanism can be arranged in the base 110 at the bottom of the process cavity 120. The rotating shaft 210 is connected to the rotating mechanism, and the shaft body of the rotating shaft 210 extends in the height direction and extends from the base 110 into the process cavity 120. The carrier disc 220 is connected to the rotating shaft 210 and is located on the side of the rotating shaft 210 away from the base 110. The rotating mechanism can drive the carrier disc 220 to rotate through the rotating shaft 210. The carrier disc 220 is arranged opposite to the gas inlet port to form a gas phase reaction area above the carrier table 200. In addition, the carrier disc 220 is also provided with heating elements arranged at intervals along the surface of the carrier disc 220, so as to heat and process the wafer 10 placed on the carrier disc 220.
[0031] As shown in Figures 3 to 5 The shielding mechanism 500 comprises a driving mechanism 510 and a shielding cover 520. The shielding cover 520 is connected to the driving mechanism 510, and the driving mechanism 510 can drive the shielding cover 520 to move in the process cavity 120. The driving mechanism 510 can drive the shielding cover 520 to move in the height direction and the plane direction at the same time. For example, the driving mechanism 510 can drive the shielding cover 520 to move to the relative position of the top surface of the carrier table 200 to cover the top surface of the wafer 10 placed on the carrier table 200. The shielding cover 520 is in the shape of a circle, and the area of the shielding cover 520 is smaller than the area of the wafer 10. When the shielding cover 520 moves to the relative position of the top surface of the carrier table 200, the center of the shielding cover 520 coincides with the center of the wafer 10 to cover the top surface of the wafer 10 and expose the circumferential edge area 11 of the wafer 10 to the process cavity 120, so as to facilitate the subsequent targeted etching and removal of the deposited film layer at the circumferential edge area 11 of the wafer 10. It should be noted that the shielding cover 520 can be made of any plasma material, for example, the shielding cover 520 can be made of ceramic materials such as aluminum oxide and aluminum nitride.
[0032] As shown in Figures 3 to 5As shown, in some embodiments, the tungsten thin film manufacturing device further has a shielding cover storage chamber 130 in the housing 100, the shielding cover storage chamber 130 is located at one side of the process cavity 120, and the shielding cover storage chamber 130 is in communication with the process cavity 120 through a window 131 formed on the inner wall of the shielding cover storage chamber 130. A shutter is slidably arranged in the window 131, and the shutter is controlled to move to seal or open the window 131. The window 131 has a caliber that allows the shielding cover 520 to pass through. The top of the window 131 is higher than the top surface of the carrier table 200, and the bottom of the window 131 is lower than the top surface of the carrier table 200. The shielding cover storage chamber 130 is used to accommodate a shielding mechanism 500, and the shielding mechanism 500 includes a driving mechanism 510 and a shielding cover 520. The shielding cover 520 is connected to the driving mechanism 510. The driving mechanism 510 can drive the shielding cover 520 to move in the vertical and horizontal directions. The driving mechanism 510 can drive the shielding cover 520 in the shielding cover storage chamber 130 to move through the window 131 to the reaction cavity, and can also drive the shielding cover 520 in the reaction cavity to continue to move to the position opposite to the top surface of the carrier table 200. The driving mechanism 510 can also drive the shielding cover 520 in the reaction cavity to move back to the shielding cover storage chamber 130 through the window 131. For example, when the tungsten thin film manufacturing device needs to perform vapor deposition on the wafer 10 on the carrier table 200, the driving mechanism 510 needs to drive the shielding cover 520 to move back to the shielding cover storage chamber 130, and move the shutter to close the window 131, so as to avoid the shielding cover 520 from interfering with the gas supply on the surface of the wafer 10 during the vapor deposition process. When the tungsten thin film manufacturing device needs to perform vapor etching on the wafer 10 on the carrier table 200, the tungsten thin film manufacturing device drives the shutter to open the window 131, the driving mechanism 510 drives the shielding cover 520 to enter the process cavity 120 through the window 131, and moves to the position opposite to the top surface of the carrier table 200, so as to complete the shielding of the top surface of the wafer 10 and the exposure of the edge area 11 of the wafer 10, so that the tungsten thin film manufacturing device can etch the tungsten layer 30 at the edge area 11 when etching the wafer 10.
[0033] As Figures 3 to 5As shown, in some embodiments, the driving mechanism 510 comprises a controller, a first driving mechanism 511 and a second driving mechanism 512. The first driving mechanism 511 and the second driving mechanism 512 are both arranged in the shield storage chamber 130, and the controller is in communication connection with the first driving mechanism 511 and the second driving mechanism 512. The first driving mechanism 511 is fixed in the shield storage chamber 130, the second driving mechanism 512 is connected to the first driving mechanism 511, and the shield 520 is connected to the second driving mechanism 512 through a connecting rod 513. The first driving mechanism 511 drives the second driving mechanism 512 to move in the horizontal direction, so as to simultaneously drive the second driving mechanism 512 and the shield 520 to approach or move away from the bearing table 200, and the second driving mechanism 512 drives the shield 520 to move in the height direction. The first driving mechanism 511 and the second driving mechanism 512 cooperate to realize the driving control of the shield 520 moving in the height or horizontal direction.
[0034] For example, the first driving mechanism 511 comprises a first guide rail fixed in the shield storage chamber 130, the extension direction of the first guide rail is perpendicular to the center of the bearing disc 220, a first telescopic part and a first sliding block are arranged on the first guide rail, the first telescopic part is fixed on the first guide rail, the first sliding block is slidingly installed on the first guide rail and is fixedly connected with the first telescopic part, and the first telescopic part drives the first sliding block to move along the first guide rail. The second driving mechanism 512 is fixed on the first sliding block, the second driving mechanism 512 can be separately provided with a second telescopic part telescoping in the height direction, and the shield 520 is connected to the telescopic end of the second telescopic part through the horizontally extending connecting rod 513; the second driving mechanism 512 can also be designed similarly to the first driving mechanism 511, the second driving mechanism 512 comprises a second guide rail, a second telescopic part and a second sliding block, the second guide rail is fixed on the first sliding block, the second guide rail extends in the height direction, the second telescopic part is fixed on the second guide rail, the second sliding block is slidingly installed on the second guide rail and is fixedly connected with the second telescopic part, the second telescopic part drives the second sliding block to move along the second guide rail, and the shield 520 is connected to the second sliding block through the horizontally extending connecting rod 513.
[0035] For example, the first driving mechanism 511 comprises a first guide rail fixed in the shield storage chamber 130, the extension direction of the first guide rail is perpendicular to the center of the bearing disc 220, a first telescopic part and a first sliding block are arranged on the first guide rail, the first telescopic part is fixed on the first guide rail, the first sliding block is slidingly installed on the first guide rail and is fixedly connected with the first telescopic part, and the first telescopic part drives the first sliding block to move along the first guide rail. The second driving mechanism 512 is fixed on the first sliding block, the second driving mechanism 512 can be separately provided with a second telescopic part telescoping in the height direction, and the shield 520 is connected to the telescopic end of the second telescopic part through the horizontally extending connecting rod 513; the second driving mechanism 512 can also be designed similarly to the first driving mechanism 511, the second driving mechanism 512 comprises a second guide rail, a second telescopic part and a second sliding block, the second guide rail is fixed on the first sliding block, the second guide rail extends in the height direction, the second telescopic part is fixed on the second guide rail, the second sliding block is slidingly installed on the second guide rail and is fixedly connected with the second telescopic part, the second telescopic part drives the second sliding block to move along the second guide rail, and the shield 520 is connected to the second sliding block through the horizontally extending connecting rod 513. Figures 3 to 5As shown, in some embodiments, the connecting rod 513 is provided as a telescopic rod capable of telescoping in the horizontal direction, and the shielding cover 520 is connected to the second driving mechanism 512 through the telescopic rod. The rod body of the telescopic rod extends in the horizontal direction, one end of the telescopic rod is connected to the second driving mechanism 512, and the other end of the telescopic rod is connected to the shielding cover 520. The telescopic rod has a telescoping function and can drive the shielding cover 520 to extend in the horizontal direction, thereby increasing the stroke of the shielding mechanism 500 in driving the shielding cover 520 to move in the horizontal direction. The telescopic rod can also bear the function of driving the shielding cover 520 to move horizontally after the shielding cover 520 enters the process chamber 120, so as to reduce the risk of vibration of the shielding cover 520 when the first driving mechanism 511 drives the second driving mechanism 512 and the shielding cover 520 to move as a whole.
[0036] In addition, in some embodiments, a showerhead is provided at the gas inlet port of the gas injection mechanism 300, and the showerhead housing serves as a radio frequency electrode and is electrically connected to a radio frequency tuner. The radio frequency tuner adjusts the radio frequency power to achieve plasma of the injected process gas. The radio frequency tuner can provide one or more of high frequency power or low frequency power. Optionally, the radio frequency power provided by the radio frequency tuner ranges from 0 to 5000 W.
[0037] In a second aspect, as shown in Figure 6 and Figure 7 The present application provides a tungsten thin film manufacturing method, which comprises the following steps: Step S1, providing a wafer 10 and placing the wafer 10 in a process chamber 120.
[0038] As shown in Figure 6 and Figure 7 In step S1, the wafer 10 is placed on the support table 200 in the process chamber 120, and the support table 200 has a heating element. After the wafer 10 is placed on the support table 200, it is located above the heating element. The process chamber 120 has a gas injection mechanism 300 and an exhaust port 410 of an exhaust mechanism 400 connected to the inner wall. The gas injection mechanism 300 is connected to the gas inlet port through a pipeline, and the gas injection mechanism 300 injects process gas into the process chamber 120 through the gas inlet port to provide process gas to the surface of the wafer 10, thereby realizing vapor deposition, etching and cleaning of the surface of the wafer 10.
[0039] It should be noted that the wafer 10 provided in step S1 can be a "bare wafer 10", i.e. a blank wafer 10 without other processes, or a wafer 10 with a front layer structure after processing.
[0040] In some embodiments, step S1 further includes a pretreatment step on the surface of the wafer 10 before placing the wafer 10 into the process cavity 120. For example, hydrofluoric acid is used to clean the surface of the wafer 10 to remove the native oxide layer on the surface of the wafer 10 to ensure good adhesion of subsequent deposited layers.
[0041] Step S2: A reactive gas is introduced into the process chamber, and a tungsten layer 30 is formed on the wafer 10 by chemical vapor deposition.
[0042] like Figure 6 and Figure 7 As shown, in step S2, a tungsten layer 30 can be deposited on the surface of wafer 10 using a conventional vapor deposition process. For example, a barrier layer 20 can be formed on wafer 10 first, and then the tungsten layer 30 can be formed on the barrier layer 20. Specifically, in some embodiments, step S2 includes the following steps: S21. A barrier layer 20 is formed on the wafer 10.
[0043] In step S21, the surface of wafer 10 has holes. A barrier layer 20 formed on the surface of wafer 10 and within the holes protects the surface of the dielectric layer of wafer 10, preventing subsequently deposited tungsten metal ions from diffusing into wafer 10. The material of the barrier layer 20 can be, for example, tantalum (Ta), tantalum nitride (TaN), titanium (Ti), titanium nitride (TiN), or any combination thereof, or it can be a cobalt (Co)-based alloy, such as Co. Ti, Co W, Co Mo or Co Conductive materials such as Ta.
[0044] In step S21, any suitable deposition process, such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), etc., can be used to deposit a barrier layer 20 on the surface of wafer 10. In one example, a titanium layer is first formed on the surface of wafer 10 using a PVD process, and then a titanium nitride layer is formed on the titanium layer using a CVD process. Specifically, at a preset temperature, ammonia (NH3) and titanium tetrachloride (TiCl4) gases are supplied to the surface of wafer 10 to continue forming a titanium nitride layer on the titanium layer.
[0045] S22. A tungsten layer 30 is formed on the barrier layer 20, and the tungsten layer 30 fills the holes on the wafer surface.
[0046] In step S22, a tungsten layer 30 can be deposited on the barrier layer 20 using a CVD process. Specifically, the environment inside the process chamber 120 is adjusted to a preset process pressure, and the wafer 10 is heated to a preset deposition process temperature by a heating element in the stage 200. The preset deposition process temperature can be adaptively adjusted according to the specific deposition process; for example, the preset process temperature can be set to any value within the range of 300°C to 430°C. Under a plasma atmosphere, silicon source gas is supplied to the surface of the wafer 10 through a gas injection mechanism 300 to form a silicon atom layer on the barrier layer 20. Then, tungsten source gas and hydrogen source gas are supplied to the surface of the wafer 10 through the gas injection mechanism 300, so that the tungsten source gas and hydrogen source gas react with the silicon atom layer to form a tungsten layer 30 on the surface of the barrier layer 20. The silicon source gas can be a single silane such as silane, disilane, trisilane, or tetrasilane. Optionally, the silicon source gas can include silane (SiH4). Hydrogen (H2) can be used as the hydrogen source gas, and tungsten hexafluoride (WF4), tungsten hexachloride (WCl4), or carbon-based tungsten (W(CO)6) can be used as the tungsten source gas.
[0047] Step S3: Cover the tungsten layer 30 with a shielding cover 520, so that the tungsten layer 30 located at the circumferential edge of the wafer 10 is exposed in the process cavity 120.
[0048] like Figure 4 , Figure 5 and Figure 7 As shown, in some embodiments, the deposition apparatus has a shield storage chamber 130 on one side of the process chamber 120. A baffle is slidably disposed on the inner wall of the shield storage chamber 130, communicating with the process chamber 120. The baffle is controlled to move to seal or open. The shield storage chamber 130 accommodates a shielding mechanism 500, which includes a drive mechanism 510 and a shield 520. The shield 520 is connected to the drive mechanism 510, which drives the shield 520 to move. During the vapor deposition process in step S2, the drive mechanism 510 retracts the shield 520 into the shield storage chamber 130 and closes it under the seal of the baffle, thus isolating the process chamber 120 and the shield storage chamber 130 from communication, thereby preventing the shield 520 from interfering with the gas supply to the surface of the wafer 10 during the vapor deposition process. In step S3, under the open condition, the drive mechanism 510 drives the shield 520 from the shield storage chamber 130 through into the process chamber 120 and moves it to the relative position on the top surface of the support platform 200.
[0049] The shield 520 is circular in shape, and its area is smaller than that of the wafer 10. When the shield 520 is positioned relative to the top surface of the support stage 200, the shield 520 contacts and covers the top surface of the wafer 10, and the center of the shield 520 coincides with the center of the wafer 10, thereby exposing the circumferential edge region 11 of the wafer 10 to the process cavity 120, so as to facilitate the targeted etching and removal of the deposited film layer in the circumferential edge region 11 of the wafer 10 in the subsequent process.
[0050] In some embodiments, in step S3, the exposed circumferential edge region 11 of the wafer 10 is a region of the wafer 10 located 0-30 mm from the outer edge of the wafer 10, and the circumferential edge region 11 of the wafer 10 includes the beveled region of the edge of the wafer 10. Optionally, the circumferential edge region 11 of the wafer 10 can be a region of the wafer 10 located 0-10 mm from the outer edge of the wafer 10.
[0051] Step S4: Introduce etching process gas into the process chamber 120 to etch and remove the tungsten layer 30 exposed in the process chamber 120.
[0052] like Figure 4 , Figure 5 and Figure 7 As shown, in step S4, the environment inside the process chamber 120 is adjusted to a preset process pressure, and the wafer 10 is heated to a preset etching process temperature by the heating element in the stage 200. Etching process gas is introduced into the process chamber 120 through the gas injection mechanism 300 to supply etching process gas to the surface of the wafer 10 under a plasma atmosphere. The etching process gas etches the tungsten layer 30 exposed in the process chamber 120 to remove the tungsten layer 30 from the circumferential edge region 11 of the wafer 10 in the deposition equipment. It should be noted that the vapor phase etching process in step S4 can not only remove the tungsten layer 30 from the edge region 11 of the wafer 10, but also etch and remove other deposited film layers (such as the barrier layer 20) on the edge region 11 of the wafer 10. It should be noted that the etching process gas can be any gas capable of etching tungsten metal materials, such as at least one of hydrochloric acid (HCl) and nitrogen trifluoride (NF3). Optionally, nitrogen trifluoride (NF3) can be used as the etching process gas.
[0053] Further, in some embodiments, the tungsten thin film deposition method further comprises a cleaning step for the wafer 10 surface after the in-situ removal of the tungsten layer 30 from the edge region 11 of the wafer 10 is completed. The cleaning step comprises supplying a cleaning gas to the wafer 10 surface by the gas injection mechanism 300 to remove halogen residues on the wafer 10 surface after the shielding cover 520 is moved back to the shielding cover storage chamber 130 by the driving mechanism 510.
[0054] The above embodiments are only illustrative of the principles and effects of the present application, and are not intended to limit the present application. Any modification or change made by those skilled in the art without departing from the spirit and scope of the present application shall be covered by the claims of the present application. Any modification or change made by those skilled in the art without departing from the spirit and scope of the present application shall be covered by the claims of the present application.
Claims
1. A tungsten thin film production apparatus characterized by comprising: The application relates to a tungsten film manufacturing device. The device comprises: a process cavity; a supporting table arranged in the process cavity, the supporting table being used for supporting a wafer; a shielding cover storage room arranged on one side of the process cavity; a shielding mechanism arranged in the shielding cover storage room, the shielding mechanism comprising a driving mechanism and a shielding cover connected to the driving mechanism; wherein a window is arranged on the process cavity, the window being in communication with the shielding cover storage room, and the window corresponding to the position of the shielding cover; when etching is performed, the window is opened, the driving mechanism drives the shielding cover to pass through the window and move above the supporting table, and cover the surface of the wafer; 2. The apparatus for producing a tungsten thin film according to claim 1, wherein the area of the shielding cover is smaller than that of the wafer, and the shielding cover covers the surface of the wafer and exposes the circumferential edge of the wafer, so that the film layer at the circumferential edge of the wafer is etched by the tungsten film manufacturing device.
3. The apparatus for tungsten thin film fabrication of claim 2, wherein, The driving mechanism comprises a controller, a first driving mechanism and a second driving mechanism, the second driving mechanism being connected to the first driving mechanism, the shielding cover being connected to the second driving mechanism, the first driving mechanism driving the second driving mechanism to move in the horizontal direction, and the second driving mechanism driving the shielding cover to move in the direction perpendicular to the supporting table.
4. The tungsten thin film production apparatus according to claim 1, wherein The shielding cover is connected to the second driving mechanism through a telescopic rod, the rod body of the telescopic rod extending in the horizontal direction, and the telescopic rod being telescoped to drive the shielding cover to move in the horizontal direction.
5. A method for fabricating a tungsten thin film on a wafer, characterized by, The circumferential edge of the wafer exposed under the shielding cover is a wafer region with a distance of 0-30 mm from the outer edge of the wafer. The application also relates to a tungsten film manufacturing method. The method comprises the following steps: providing a wafer and placing the wafer in a process cavity; introducing a reaction gas into the process cavity to form a tungsten layer on the wafer by chemical vapor deposition; 6. The method of manufacturing according to claim 5, wherein, covering the shielding cover on the tungsten layer to expose the tungsten layer at the circumferential edge of the wafer in the process cavity; 7. The method of manufacturing according to claim 5, wherein, introducing an etching process gas into the process cavity to etch and remove the tungsten layer exposed in the process cavity. The etching process gas comprises at least one of hydrochloric acid and nitrogen trifluoride. The method for forming the tungsten layer on the wafer by chemical vapor deposition comprises the following steps:
8. The production method according to claim 5 or 7, characterized by, forming a barrier layer on the surface of the wafer and in the surface hole; forming a tungsten layer on the barrier layer, and the tungsten layer filling the hole.
9. The method of manufacturing of claim 5, wherein, The step of forming the tungsten layer comprises the following steps: supplying tungsten source gas and hydrogen source gas on the surface of the wafer to deposit and form a tungsten layer on the surface of the wafer.
10. The method of manufacturing according to claim 5, wherein, The method further comprises the following steps: blowing clean gas on the surface of the wafer to remove halogen residues on the surface of the wafer, wherein the clean gas comprises at least one of hydrogen, diborane and silane. The circumferential edge of the wafer is a wafer region with a distance of 0-30 mm from the outer edge of the wafer.